| Foto | Bezeichnung | Hersteller | Beschreibung |
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NTHL020N090SC1 | ONSEMI |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; SiC; unipolar; 900V; 83A; Idm: 427A; 251W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 900V Drain current: 83A Pulsed drain current: 427A Power dissipation: 251W Case: TO247-3 Gate-source voltage: -10...19V On-state resistance: 28mΩ Mounting: THT Gate charge: 196nC Kind of package: tube Kind of channel: enhanced |
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NTHL020N120SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 73A; Idm: 412A; 267W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 73A Pulsed drain current: 412A Power dissipation: 267W Case: TO247-3 Gate-source voltage: -15...25V On-state resistance: 28mΩ Mounting: THT Gate charge: 66nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| NTHL033N65S3HF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 53A; Idm: 175A; 500W; TO247 Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 650V Drain current: 53A Pulsed drain current: 175A Power dissipation: 500W Case: TO247 Gate-source voltage: ±30V On-state resistance: 33mΩ Mounting: THT Gate charge: 188nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| NTHL040N65S3F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247 Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 650V Drain current: 45A Pulsed drain current: 162.5A Power dissipation: 446W Case: TO247 Gate-source voltage: ±30V On-state resistance: 40mΩ Mounting: THT Gate charge: 158nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| NTHL041N60S5H | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 36A; Idm: 200A; 329W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 36A Pulsed drain current: 200A Power dissipation: 329W Case: TO247 Gate-source voltage: ±30V On-state resistance: 32.8mΩ Mounting: THT Gate charge: 108nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 198 Stücke: Lieferzeit 14-21 Tag (e) |
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NTHL060N090SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 32A; Idm: 184A; 110W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 900V Drain current: 32A Pulsed drain current: 184A Power dissipation: 110W Case: TO247-3 Gate-source voltage: -10...20V On-state resistance: 60mΩ Mounting: THT Gate charge: 87nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| NTHL065N65S3F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 115A; 337W; TO247 Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Pulsed drain current: 115A Power dissipation: 337W Case: TO247 Gate-source voltage: ±30V On-state resistance: 65mΩ Mounting: THT Gate charge: 98nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| NTHL065N65S3HF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 115A; 337W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Pulsed drain current: 115A Power dissipation: 337W Case: TO247 Gate-source voltage: ±30V On-state resistance: 54mΩ Mounting: THT Gate charge: 98nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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NTHL080N120SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; Idm: 136A; 58W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 31A Pulsed drain current: 136A Power dissipation: 58W Case: TO247-3 Gate-source voltage: -5...20V On-state resistance: 80mΩ Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| NTHL080N120SC1A | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 1.2kV; 22A; Idm: 132A; 178W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 22A Pulsed drain current: 132A Power dissipation: 178W Case: TO247 Gate-source voltage: ±25V On-state resistance: 114mΩ Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| NTHL082N65S3F | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 25.5A; Idm: 100A; 313W; TO247 Type of transistor: N-MOSFET Technology: SuperFET® Polarisation: unipolar Drain-source voltage: 650V Drain current: 25.5A Pulsed drain current: 100A Power dissipation: 313W Case: TO247 Gate-source voltage: ±30V On-state resistance: 82mΩ Mounting: THT Gate charge: 81nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| NTHL095N65S3HF | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 22.8A; Idm: 90A; 272W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 22.8A Pulsed drain current: 90A Power dissipation: 272W Case: TO247 Gate-source voltage: ±30V On-state resistance: 78mΩ Mounting: THT Gate charge: 66nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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NVHL020N090SC1 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 83A; Idm: 472A; 251W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 900V Drain current: 83A Pulsed drain current: 472A Power dissipation: 251W Case: TO247-3 Gate-source voltage: -10...19V On-state resistance: 28mΩ Mounting: THT Gate charge: 78nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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4N37M | ONSEMI |
 Category: Optocouplers - analog outputDescription: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 7.5kV CTR@If: 100%@10mA Collector-emitter voltage: 30V Case: DIP6 Turn-on time: 2µs Turn-off time: 2µs |
auf Bestellung 714 Stücke: Lieferzeit 14-21 Tag (e) |
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4N37SM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 7.5kV CTR@If: 100%@10mA Collector-emitter voltage: 30V Case: Gull wing 6 Turn-on time: 2µs Turn-off time: 2µs |
auf Bestellung 1010 Stücke: Lieferzeit 14-21 Tag (e) |
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FDP8870 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 147A; 160W; TO220AB Mounting: THT Power dissipation: 160W Polarisation: unipolar Drain current: 147A Kind of channel: enhanced Drain-source voltage: 30V Type of transistor: N-MOSFET Kind of package: tube Case: TO220AB On-state resistance: 6.5mΩ Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
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FDS8870 | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 18A; 2.5W; SO8 Mounting: SMD On-state resistance: 7.2mΩ Type of transistor: N-MOSFET Power dissipation: 2.5W Polarisation: unipolar Kind of package: reel; tape Gate charge: 112nC Technology: PowerTrench® Kind of channel: enhanced Gate-source voltage: ±20V Case: SO8 Drain-source voltage: 30V Drain current: 18A |
Produkt ist nicht verfügbar |
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MBRS240LT3G | ONSEMI |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 2A; SMB; reel,tape Type of diode: Schottky rectifying Mounting: SMD Max. off-state voltage: 40V Load current: 2A Max. load current: 4A Semiconductor structure: single diode Max. forward voltage: 0.55V Case: SMB Kind of package: reel; tape |
Produkt ist nicht verfügbar |
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MC78L18ABPG | ONSEMI |
Category: Unregulated voltage regulators Description: IC: voltage regulator; linear,fixed; 18V; 0.1A; TO92; THT; bulk Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.7V Output voltage: 18V Output current: 0.1A Case: TO92 Mounting: THT Kind of package: bulk Operating temperature: -40...125°C Tolerance: ±4% Number of channels: 1 Input voltage: 20.7...33V Manufacturer series: MC78L00A |
Produkt ist nicht verfügbar |
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MC78L18ACPG | ONSEMI |
Category: Unregulated voltage regulators Description: IC: voltage regulator; linear,fixed; 18V; 0.1A; TO92; THT; bulk Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; linear Voltage drop: 1.7V Output voltage: 18V Output current: 0.1A Case: TO92 Mounting: THT Kind of package: bulk Operating temperature: 0...125°C Tolerance: ±4% Number of channels: 1 Input voltage: 20.7...33V Manufacturer series: MC78L00A |
auf Bestellung 239 Stücke: Lieferzeit 14-21 Tag (e) |
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| FODM3083 | ONSEMI |
Category: Optotriacs Description: Optotriac; 3.75kV; triac,zero voltage crossing driver; Ch: 1 Type of optocoupler: optotriac Insulation voltage: 3.75kV Kind of output: triac; zero voltage crossing driver Case: Mini-flat 4pin Max. off-state voltage: 6V Trigger current: 5mA Mounting: SMD Number of channels: 1 Manufacturer series: FODM308x |
Produkt ist nicht verfügbar |
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FODM3083R2 | ONSEMI |
Category: Optotriacs Description: Optotriac; 3.75kV; triac; Mini-flat 4pin; Ch: 1; FODM308x Type of optocoupler: optotriac Insulation voltage: 3.75kV Kind of output: triac Case: Mini-flat 4pin Mounting: SMD Number of channels: 1 Manufacturer series: FODM308x |
auf Bestellung 2365 Stücke: Lieferzeit 14-21 Tag (e) |
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CNY17F1M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 40-80%@10mA Collector-emitter voltage: 70V Case: DIP6 Turn-on time: 10µs Turn-off time: 10µs Max. off-state voltage: 6V Manufacturer series: CNY17 |
Produkt ist nicht verfügbar |
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CNY17F1SR2M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V Mounting: SMD CTR@If: 40-80%@10mA Manufacturer series: CNY17 Type of optocoupler: optocoupler Case: Gull wing 6 Collector-emitter voltage: 100V Turn-on time: 2µs Turn-off time: 3µs Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV |
auf Bestellung 392 Stücke: Lieferzeit 14-21 Tag (e) |
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CNY17F1VM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 40-80%@10mA Collector-emitter voltage: 100V Case: DIP6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
auf Bestellung 848 Stücke: Lieferzeit 14-21 Tag (e) |
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CNY17F2M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 63-125%@10mA Collector-emitter voltage: 70V Case: DIP6 Turn-on time: 10µs Turn-off time: 10µs Max. off-state voltage: 6V Manufacturer series: CNY17 |
Produkt ist nicht verfügbar |
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CNY17F2SM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 63-125%@10mA Collector-emitter voltage: 100V Case: Gull wing 6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
auf Bestellung 251 Stücke: Lieferzeit 14-21 Tag (e) |
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CNY17F2SR2VM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 63-125%@10mA Collector-emitter voltage: 100V Case: Gull wing 6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
Produkt ist nicht verfügbar |
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CNY17F2TVM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 63-125%@10mA Collector-emitter voltage: 100V Case: DIP6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
Produkt ist nicht verfügbar |
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CNY17F3M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 100-200%@10mA Collector-emitter voltage: 100V Case: DIP6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
Produkt ist nicht verfügbar |
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CNY17F3VM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 160-320%@10mA Collector-emitter voltage: 100V Case: DIP6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
auf Bestellung 572 Stücke: Lieferzeit 14-21 Tag (e) |
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CNY17F4M | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 160-320%@10mA Collector-emitter voltage: 70V Case: DIP6 Turn-on time: 10µs Turn-off time: 10µs Max. off-state voltage: 6V Manufacturer series: CNY17 |
Produkt ist nicht verfügbar |
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CNY17F4SR2VM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V Type of optocoupler: optocoupler Mounting: SMD Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 160-320%@10mA Collector-emitter voltage: 100V Case: Gull wing 6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
auf Bestellung 504 Stücke: Lieferzeit 14-21 Tag (e) |
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CNY17F4TVM | ONSEMI |
Category: Optocouplers - analog output Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V Type of optocoupler: optocoupler Mounting: THT Number of channels: 1 Kind of output: transistor Insulation voltage: 4.17kV CTR@If: 160-320%@10mA Collector-emitter voltage: 100V Case: DIP6 Turn-on time: 2µs Turn-off time: 3µs Manufacturer series: CNY17 |
auf Bestellung 253 Stücke: Lieferzeit 14-21 Tag (e) |
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MC74AC374DTR2G | ONSEMI |
Category: Flip-Flops Description: IC: digital; D flip-flop; Ch: 1; SMD; TSSOP20; reel,tape; 80uA Type of integrated circuit: digital Kind of integrated circuit: D flip-flop Number of channels: 1 Mounting: SMD Case: TSSOP20 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Trigger: positive-edge-triggered Kind of output: 3-state Quiescent current: 80µA |
Produkt ist nicht verfügbar |
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| MC74AC374DWG | ONSEMI |
Category: Flip-Flops Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS; AC; SMD; SOIC20 Type of integrated circuit: digital Kind of integrated circuit: 3-state; D flip-flop; octal Number of channels: 8 Technology: CMOS Manufacturer series: AC Mounting: SMD Case: SOIC20 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: tube Family: AC Kind of output: 3-state |
Produkt ist nicht verfügbar |
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| MC74AC374DWR2G | ONSEMI |
Category: Flip-Flops Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS; AC; SMD; SOIC20 Type of integrated circuit: digital Kind of integrated circuit: 3-state; D flip-flop; octal Number of channels: 8 Technology: CMOS Manufacturer series: AC Mounting: SMD Case: SOIC20 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: reel; tape Family: AC Kind of output: 3-state |
Produkt ist nicht verfügbar |
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FQD13N06LTM | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 28W; DPAK Type of transistor: N-MOSFET Technology: QFET® Polarisation: unipolar Drain-source voltage: 60V Drain current: 7A Power dissipation: 28W Case: DPAK Gate-source voltage: ±20V On-state resistance: 0.145Ω Mounting: SMD Gate charge: 6.4nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2357 Stücke: Lieferzeit 14-21 Tag (e) |
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FQT13N06TF | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2.24A; Idm: 11.2A; 2.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2.24A Pulsed drain current: 11.2A Power dissipation: 2.1W Case: SOT223 Gate-source voltage: ±25V On-state resistance: 0.14Ω Mounting: SMD Gate charge: 7.5nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| FQU13N06LTU | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7A; Idm: 44A; 28W; IPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7A Pulsed drain current: 44A Power dissipation: 28W Case: IPAK Gate-source voltage: ±20V On-state resistance: 0.145Ω Mounting: THT Gate charge: 6.4nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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MC74HCT32ADR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; 15ns Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Delay time: 15ns Family: HCT |
Produkt ist nicht verfügbar |
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| MC74HCT32ADTR2G | ONSEMI |
Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; HCT; 2÷6VDC; HCT Type of integrated circuit: digital Kind of gate: OR Number of channels: 4 Number of inputs: 2 Technology: CMOS; TTL Mounting: SMD Case: TSSOP14 Manufacturer series: HCT Supply voltage: 2...6V DC Operating temperature: -55...125°C Kind of package: reel; tape Family: HCT |
Produkt ist nicht verfügbar |
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MM74HCT32M | ONSEMI |
Category: Gates, inverters Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C Type of integrated circuit: digital Kind of gate: OR Number of channels: quad; 4 Number of inputs: 2 Technology: CMOS Mounting: SMD Case: SO14 Supply voltage: 4.5...5.5V DC Operating temperature: -40...85°C Kind of package: tube Delay time: 10ns Family: HCT |
auf Bestellung 265 Stücke: Lieferzeit 14-21 Tag (e) |
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KSP55TA | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 60V; 0.5A; 0.625W; TO92 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 60V Collector current: 0.5A Power dissipation: 0.625W Case: TO92 Mounting: THT Kind of package: Ammo Pack |
auf Bestellung 1975 Stücke: Lieferzeit 14-21 Tag (e) |
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MJE253G | ONSEMI |
Category: PNP THT transistors Description: Transistor: PNP; bipolar; 100V; 4A; 15W; TO225 Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 4A Power dissipation: 15W Case: TO225 Current gain: 15...180 Mounting: THT Kind of package: bulk Frequency: 40MHz |
auf Bestellung 472 Stücke: Lieferzeit 14-21 Tag (e) |
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| NCP308MT500TBG | ONSEMI |
Category: Watchdog and reset circuits Description: IC: Supervisor Integrated Circuit; open drain; 1.6÷5.5VDC; WDFN6 Type of integrated circuit: Supervisor Integrated Circuit Kind of integrated circuit: power on reset monitor (PoR) Kind of RESET output: open drain Active logical level: low Supply voltage: 1.6...5.5V DC Case: WDFN6 Operating temperature: -40...125°C Mounting: SMD DC supply current: 6µA Maximum output current: 5mA Threshold on-voltage: 4.65V |
Produkt ist nicht verfügbar |
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| NCP716MT50TBG | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 80mA; WDFN6; SMD; ±2% Mounting: SMD Operating temperature: -40...125°C Input voltage: 2.5...24V Output current: 80mA Type of integrated circuit: voltage regulator Voltage drop: 0.5V Output voltage: 5V Case: WDFN6 Number of channels: 1 Tolerance: ±2% Kind of voltage regulator: fixed; LDO; linear Manufacturer series: NCP716 |
Produkt ist nicht verfügbar |
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| NCP730BMT500TBG | ONSEMI |
Category: LDO unregulated voltage regulators Description: IC: voltage regulator; LDO,linear,fixed; 5V; 150mA; WDFN6; SMD Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.48V Output voltage: 5V Output current: 0.15A Case: WDFN6 Mounting: SMD Operating temperature: -40...125°C Tolerance: ±1% Number of channels: 1 Input voltage: 2.7...38V Manufacturer series: NCP730 |
Produkt ist nicht verfügbar |
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CPH6350-TL-W | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -6A; Idm: -24A; 1.6W; SOT23 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -6A Pulsed drain current: -24A Power dissipation: 1.6W Case: SOT23 Gate-source voltage: ±20V On-state resistance: 86mΩ Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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RFD16N05SM9A | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 50V; 16A; 72W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 50V Drain current: 16A Power dissipation: 72W Case: DPAK Gate-source voltage: ±20V On-state resistance: 47mΩ Mounting: SMD Gate charge: 80nC Kind of package: reel; tape Kind of channel: enhanced |
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DTA114YET1G | ONSEMI |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75; R1: 10kΩ Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC75 Current gain: 80...140 Mounting: SMD Kind of package: reel; tape Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
auf Bestellung 8875 Stücke: Lieferzeit 14-21 Tag (e) |
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LM2904VDR2G | ONSEMI |
Category: SMD operational amplifiers Description: IC: operational amplifier; 1MHz; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC Type of integrated circuit: operational amplifier Bandwidth: 1MHz Mounting: SMT Number of channels: 2 Case: SO8 Slew rate: 0.3V/μs Operating temperature: -40...125°C Input offset voltage: 10mV Voltage supply range: ± 1.5...16V DC; 3...32V DC Kind of package: reel; tape Input bias current: 50nA Input offset current: 45...200nA |
Produkt ist nicht verfügbar |
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| 74LCXP16245MTDX | ONSEMI |
Category: Buffers, transceivers, drivers Description: IC: digital; 16bit,3-state,bidirectional,transceiver; Ch: 16 Technology: CMOS Case: TSSOP48 Mounting: SMD Kind of package: reel; tape Manufacturer series: LCXR Operating temperature: -40...85°C Supply voltage: 1.5...3.6V DC Kind of integrated circuit: 3-state; 16bit; bidirectional; transceiver Number of channels: 16 Type of integrated circuit: digital Kind of output: 3-state Integrated circuit features: 5V tolerant on inputs/outputs Family: LCXP |
Produkt ist nicht verfügbar |
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FDC604P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -5.5A; 1.6W; SuperSOT-6 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±8V Case: SuperSOT-6 On-state resistance: 60mΩ Power dissipation: 1.6W Gate charge: 30nC Polarisation: unipolar Technology: PowerTrench® Drain current: -5.5A Kind of channel: enhanced |
auf Bestellung 2036 Stücke: Lieferzeit 14-21 Tag (e) |
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FDC634P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; 1.6W; SuperSOT-6 Type of transistor: P-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: -20V Drain current: -3.5A Power dissipation: 1.6W Case: SuperSOT-6 Gate-source voltage: ±8V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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| FDC654P | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 1.6W; SuperSOT-6 Mounting: SMD Kind of package: reel; tape Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±20V Case: SuperSOT-6 On-state resistance: 0.115Ω Power dissipation: 1.6W Polarisation: unipolar Drain current: -3.6A Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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FDC6324L | ONSEMI |
Category: Power switches - integrated circuits Description: IC: power switch; high-side; 1.5A; Ch: 1; P-Channel; SMD; SuperSOT-6 Mounting: SMD Kind of package: reel; tape Case: SuperSOT-6 Kind of integrated circuit: high-side Number of channels: 1 Supply voltage: 3...20V DC Control voltage: 1.5...8V DC Output current: 1.5A Type of integrated circuit: power switch Kind of output: P-Channel |
auf Bestellung 2700 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTGS4111PT1G | ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; 1.25W; TSOP6 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -2.7A Power dissipation: 1.25W Case: TSOP6 Gate-source voltage: ±20V On-state resistance: 60mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |
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BZX84C33LT1G | ONSEMI |
Category: SMD Zener diodes Description: Diode: Zener; 0.3W; 33V; SMD; reel,tape; SOT23; single diode Type of diode: Zener Power dissipation: 0.3W Zener voltage: 33V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode |
auf Bestellung 270 Stücke: Lieferzeit 14-21 Tag (e) |
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74AC86MTC | ONSEMI |
Category: Gates, inverters Description: IC: digital; XOR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷6VDC; -40÷85°C; tube Type of integrated circuit: digital Kind of gate: XOR Number of channels: quad; 4 Number of inputs: 2 Mounting: SMD Case: TSSOP14 Supply voltage: 2...6V DC Operating temperature: -40...85°C Kind of package: tube Quiescent current: 20µA Family: AC |
auf Bestellung 226 Stücke: Lieferzeit 14-21 Tag (e) |
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| NTHL020N090SC1 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 83A; Idm: 427A; 251W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 83A
Pulsed drain current: 427A
Power dissipation: 251W
Case: TO247-3
Gate-source voltage: -10...19V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 83A; Idm: 427A; 251W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 83A
Pulsed drain current: 427A
Power dissipation: 251W
Case: TO247-3
Gate-source voltage: -10...19V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 196nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| NTHL020N120SC1 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 73A; Idm: 412A; 267W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 73A
Pulsed drain current: 412A
Power dissipation: 267W
Case: TO247-3
Gate-source voltage: -15...25V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 73A; Idm: 412A; 267W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 73A
Pulsed drain current: 412A
Power dissipation: 267W
Case: TO247-3
Gate-source voltage: -15...25V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| NTHL033N65S3HF |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 53A; Idm: 175A; 500W; TO247
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 53A
Pulsed drain current: 175A
Power dissipation: 500W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 188nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 53A; Idm: 175A; 500W; TO247
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 53A
Pulsed drain current: 175A
Power dissipation: 500W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 33mΩ
Mounting: THT
Gate charge: 188nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| NTHL040N65S3F |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 162.5A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 158nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 45A; Idm: 162.5A; 446W; TO247
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 45A
Pulsed drain current: 162.5A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 158nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| NTHL041N60S5H |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; Idm: 200A; 329W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Pulsed drain current: 200A
Power dissipation: 329W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 32.8mΩ
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; Idm: 200A; 329W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Pulsed drain current: 200A
Power dissipation: 329W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 32.8mΩ
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 198 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 6+ | 13.99 EUR |
| 8+ | 9.54 EUR |
| NTHL060N090SC1 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 32A; Idm: 184A; 110W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 32A
Pulsed drain current: 184A
Power dissipation: 110W
Case: TO247-3
Gate-source voltage: -10...20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 32A; Idm: 184A; 110W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 32A
Pulsed drain current: 184A
Power dissipation: 110W
Case: TO247-3
Gate-source voltage: -10...20V
On-state resistance: 60mΩ
Mounting: THT
Gate charge: 87nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| NTHL065N65S3F |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 115A; 337W; TO247
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 115A
Power dissipation: 337W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 115A; 337W; TO247
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 115A
Power dissipation: 337W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| NTHL065N65S3HF |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 115A; 337W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 115A
Power dissipation: 337W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 54mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 115A; 337W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 115A
Power dissipation: 337W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 54mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| NTHL080N120SC1 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; Idm: 136A; 58W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 31A
Pulsed drain current: 136A
Power dissipation: 58W
Case: TO247-3
Gate-source voltage: -5...20V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 31A; Idm: 136A; 58W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 31A
Pulsed drain current: 136A
Power dissipation: 58W
Case: TO247-3
Gate-source voltage: -5...20V
On-state resistance: 80mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| NTHL080N120SC1A |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 22A; Idm: 132A; 178W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 22A
Pulsed drain current: 132A
Power dissipation: 178W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 114mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 1.2kV; 22A; Idm: 132A; 178W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 22A
Pulsed drain current: 132A
Power dissipation: 178W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 114mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| NTHL082N65S3F |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 25.5A; Idm: 100A; 313W; TO247
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 25.5A
Pulsed drain current: 100A
Power dissipation: 313W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 25.5A; Idm: 100A; 313W; TO247
Type of transistor: N-MOSFET
Technology: SuperFET®
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 25.5A
Pulsed drain current: 100A
Power dissipation: 313W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 82mΩ
Mounting: THT
Gate charge: 81nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| NTHL095N65S3HF |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22.8A; Idm: 90A; 272W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22.8A
Pulsed drain current: 90A
Power dissipation: 272W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 22.8A; Idm: 90A; 272W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 22.8A
Pulsed drain current: 90A
Power dissipation: 272W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: THT
Gate charge: 66nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| NVHL020N090SC1 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 83A; Idm: 472A; 251W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 83A
Pulsed drain current: 472A
Power dissipation: 251W
Case: TO247-3
Gate-source voltage: -10...19V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 900V; 83A; Idm: 472A; 251W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 83A
Pulsed drain current: 472A
Power dissipation: 251W
Case: TO247-3
Gate-source voltage: -10...19V
On-state resistance: 28mΩ
Mounting: THT
Gate charge: 78nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| 4N37M | |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
CTR@If: 100%@10mA
Collector-emitter voltage: 30V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 2µs
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
CTR@If: 100%@10mA
Collector-emitter voltage: 30V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 2µs
auf Bestellung 714 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 132+ | 0.54 EUR |
| 165+ | 0.43 EUR |
| 197+ | 0.36 EUR |
| 209+ | 0.34 EUR |
| 4N37SM |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
CTR@If: 100%@10mA
Collector-emitter voltage: 30V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 2µs
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 7.5kV; Uce: 30V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 7.5kV
CTR@If: 100%@10mA
Collector-emitter voltage: 30V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 2µs
auf Bestellung 1010 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 76+ | 0.94 EUR |
| 132+ | 0.54 EUR |
| 261+ | 0.27 EUR |
| 275+ | 0.26 EUR |
| FDP8870 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 147A; 160W; TO220AB
Mounting: THT
Power dissipation: 160W
Polarisation: unipolar
Drain current: 147A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
On-state resistance: 6.5mΩ
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 147A; 160W; TO220AB
Mounting: THT
Power dissipation: 160W
Polarisation: unipolar
Drain current: 147A
Kind of channel: enhanced
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Kind of package: tube
Case: TO220AB
On-state resistance: 6.5mΩ
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
| FDS8870 |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; 2.5W; SO8
Mounting: SMD
On-state resistance: 7.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 112nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SO8
Drain-source voltage: 30V
Drain current: 18A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 18A; 2.5W; SO8
Mounting: SMD
On-state resistance: 7.2mΩ
Type of transistor: N-MOSFET
Power dissipation: 2.5W
Polarisation: unipolar
Kind of package: reel; tape
Gate charge: 112nC
Technology: PowerTrench®
Kind of channel: enhanced
Gate-source voltage: ±20V
Case: SO8
Drain-source voltage: 30V
Drain current: 18A
Produkt ist nicht verfügbar
| MBRS240LT3G |
|
Hersteller: ONSEMI
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 2A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Max. load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Case: SMB
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 2A; SMB; reel,tape
Type of diode: Schottky rectifying
Mounting: SMD
Max. off-state voltage: 40V
Load current: 2A
Max. load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 0.55V
Case: SMB
Kind of package: reel; tape
Produkt ist nicht verfügbar
| MC78L18ABPG |
|
Hersteller: ONSEMI
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 18V; 0.1A; TO92; THT; bulk
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: 18V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: bulk
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 20.7...33V
Manufacturer series: MC78L00A
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 18V; 0.1A; TO92; THT; bulk
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: 18V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: bulk
Operating temperature: -40...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 20.7...33V
Manufacturer series: MC78L00A
Produkt ist nicht verfügbar
| MC78L18ACPG |
|
Hersteller: ONSEMI
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 18V; 0.1A; TO92; THT; bulk
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: 18V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: bulk
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 20.7...33V
Manufacturer series: MC78L00A
Category: Unregulated voltage regulators
Description: IC: voltage regulator; linear,fixed; 18V; 0.1A; TO92; THT; bulk
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; linear
Voltage drop: 1.7V
Output voltage: 18V
Output current: 0.1A
Case: TO92
Mounting: THT
Kind of package: bulk
Operating temperature: 0...125°C
Tolerance: ±4%
Number of channels: 1
Input voltage: 20.7...33V
Manufacturer series: MC78L00A
auf Bestellung 239 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 125+ | 0.57 EUR |
| 151+ | 0.47 EUR |
| 176+ | 0.41 EUR |
| 239+ | 0.3 EUR |
| FODM3083 |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 3.75kV; triac,zero voltage crossing driver; Ch: 1
Type of optocoupler: optotriac
Insulation voltage: 3.75kV
Kind of output: triac; zero voltage crossing driver
Case: Mini-flat 4pin
Max. off-state voltage: 6V
Trigger current: 5mA
Mounting: SMD
Number of channels: 1
Manufacturer series: FODM308x
Category: Optotriacs
Description: Optotriac; 3.75kV; triac,zero voltage crossing driver; Ch: 1
Type of optocoupler: optotriac
Insulation voltage: 3.75kV
Kind of output: triac; zero voltage crossing driver
Case: Mini-flat 4pin
Max. off-state voltage: 6V
Trigger current: 5mA
Mounting: SMD
Number of channels: 1
Manufacturer series: FODM308x
Produkt ist nicht verfügbar
| FODM3083R2 |
|
Hersteller: ONSEMI
Category: Optotriacs
Description: Optotriac; 3.75kV; triac; Mini-flat 4pin; Ch: 1; FODM308x
Type of optocoupler: optotriac
Insulation voltage: 3.75kV
Kind of output: triac
Case: Mini-flat 4pin
Mounting: SMD
Number of channels: 1
Manufacturer series: FODM308x
Category: Optotriacs
Description: Optotriac; 3.75kV; triac; Mini-flat 4pin; Ch: 1; FODM308x
Type of optocoupler: optotriac
Insulation voltage: 3.75kV
Kind of output: triac
Case: Mini-flat 4pin
Mounting: SMD
Number of channels: 1
Manufacturer series: FODM308x
auf Bestellung 2365 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 16+ | 4.52 EUR |
| 22+ | 3.3 EUR |
| 26+ | 2.78 EUR |
| 28+ | 2.63 EUR |
| CNY17F1M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 40-80%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 10µs
Turn-off time: 10µs
Max. off-state voltage: 6V
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 40-80%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 10µs
Turn-off time: 10µs
Max. off-state voltage: 6V
Manufacturer series: CNY17
Produkt ist nicht verfügbar
| CNY17F1SR2M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V
Mounting: SMD
CTR@If: 40-80%@10mA
Manufacturer series: CNY17
Type of optocoupler: optocoupler
Case: Gull wing 6
Collector-emitter voltage: 100V
Turn-on time: 2µs
Turn-off time: 3µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V
Mounting: SMD
CTR@If: 40-80%@10mA
Manufacturer series: CNY17
Type of optocoupler: optocoupler
Case: Gull wing 6
Collector-emitter voltage: 100V
Turn-on time: 2µs
Turn-off time: 3µs
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
auf Bestellung 392 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 90+ | 0.8 EUR |
| 182+ | 0.39 EUR |
| 218+ | 0.33 EUR |
| 254+ | 0.28 EUR |
| 264+ | 0.27 EUR |
| CNY17F1VM |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 40-80%@10mA
Collector-emitter voltage: 100V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 40-80%@10mA
Collector-emitter voltage: 100V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
auf Bestellung 848 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 90+ | 0.8 EUR |
| 224+ | 0.32 EUR |
| 271+ | 0.26 EUR |
| 286+ | 0.25 EUR |
| CNY17F2M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 10µs
Turn-off time: 10µs
Max. off-state voltage: 6V
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 10µs
Turn-off time: 10µs
Max. off-state voltage: 6V
Manufacturer series: CNY17
Produkt ist nicht verfügbar
| CNY17F2SM |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 100V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 100V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
auf Bestellung 251 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 76+ | 0.94 EUR |
| 204+ | 0.35 EUR |
| 247+ | 0.29 EUR |
| CNY17F2SR2VM |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 100V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 100V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Produkt ist nicht verfügbar
| CNY17F2TVM |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 100V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 63-125%@10mA
Collector-emitter voltage: 100V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Produkt ist nicht verfügbar
| CNY17F3M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 100V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 100-200%@10mA
Collector-emitter voltage: 100V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Produkt ist nicht verfügbar
| CNY17F3VM |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 100V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 100V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
auf Bestellung 572 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 113+ | 0.64 EUR |
| 168+ | 0.43 EUR |
| 203+ | 0.35 EUR |
| 232+ | 0.31 EUR |
| 246+ | 0.29 EUR |
| CNY17F4M |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 10µs
Turn-off time: 10µs
Max. off-state voltage: 6V
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 70V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 70V
Case: DIP6
Turn-on time: 10µs
Turn-off time: 10µs
Max. off-state voltage: 6V
Manufacturer series: CNY17
Produkt ist nicht verfügbar
| CNY17F4SR2VM |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 100V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; SMD; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: SMD
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 100V
Case: Gull wing 6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
auf Bestellung 504 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 126+ | 0.57 EUR |
| 191+ | 0.37 EUR |
| 215+ | 0.33 EUR |
| 249+ | 0.29 EUR |
| 264+ | 0.27 EUR |
| CNY17F4TVM |
|
Hersteller: ONSEMI
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 100V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
Category: Optocouplers - analog output
Description: Optocoupler; THT; Ch: 1; OUT: transistor; Uinsul: 4.17kV; Uce: 100V
Type of optocoupler: optocoupler
Mounting: THT
Number of channels: 1
Kind of output: transistor
Insulation voltage: 4.17kV
CTR@If: 160-320%@10mA
Collector-emitter voltage: 100V
Case: DIP6
Turn-on time: 2µs
Turn-off time: 3µs
Manufacturer series: CNY17
auf Bestellung 253 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 90+ | 0.8 EUR |
| 190+ | 0.38 EUR |
| 230+ | 0.31 EUR |
| 243+ | 0.3 EUR |
| MC74AC374DTR2G |
|
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; SMD; TSSOP20; reel,tape; 80uA
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Mounting: SMD
Case: TSSOP20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
Kind of output: 3-state
Quiescent current: 80µA
Category: Flip-Flops
Description: IC: digital; D flip-flop; Ch: 1; SMD; TSSOP20; reel,tape; 80uA
Type of integrated circuit: digital
Kind of integrated circuit: D flip-flop
Number of channels: 1
Mounting: SMD
Case: TSSOP20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Trigger: positive-edge-triggered
Kind of output: 3-state
Quiescent current: 80µA
Produkt ist nicht verfügbar
| MC74AC374DWG |
|
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS; AC; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Number of channels: 8
Technology: CMOS
Manufacturer series: AC
Mounting: SMD
Case: SOIC20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: AC
Kind of output: 3-state
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS; AC; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Number of channels: 8
Technology: CMOS
Manufacturer series: AC
Mounting: SMD
Case: SOIC20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Family: AC
Kind of output: 3-state
Produkt ist nicht verfügbar
| MC74AC374DWR2G |
|
Hersteller: ONSEMI
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS; AC; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Number of channels: 8
Technology: CMOS
Manufacturer series: AC
Mounting: SMD
Case: SOIC20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Kind of output: 3-state
Category: Flip-Flops
Description: IC: digital; 3-state,octal,D flip-flop; Ch: 8; CMOS; AC; SMD; SOIC20
Type of integrated circuit: digital
Kind of integrated circuit: 3-state; D flip-flop; octal
Number of channels: 8
Technology: CMOS
Manufacturer series: AC
Mounting: SMD
Case: SOIC20
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: reel; tape
Family: AC
Kind of output: 3-state
Produkt ist nicht verfügbar
| FQD13N06LTM |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 28W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Power dissipation: 28W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 6.4nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; 28W; DPAK
Type of transistor: N-MOSFET
Technology: QFET®
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Power dissipation: 28W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: SMD
Gate charge: 6.4nC
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2357 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 119+ | 0.6 EUR |
| 132+ | 0.54 EUR |
| 168+ | 0.43 EUR |
| 178+ | 0.4 EUR |
| FQT13N06TF |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.24A; Idm: 11.2A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.24A
Pulsed drain current: 11.2A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±25V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 7.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2.24A; Idm: 11.2A; 2.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2.24A
Pulsed drain current: 11.2A
Power dissipation: 2.1W
Case: SOT223
Gate-source voltage: ±25V
On-state resistance: 0.14Ω
Mounting: SMD
Gate charge: 7.5nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FQU13N06LTU |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; Idm: 44A; 28W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Pulsed drain current: 44A
Power dissipation: 28W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 6.4nC
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; Idm: 44A; 28W; IPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Pulsed drain current: 44A
Power dissipation: 28W
Case: IPAK
Gate-source voltage: ±20V
On-state resistance: 0.145Ω
Mounting: THT
Gate charge: 6.4nC
Kind of package: tube
Kind of channel: enhanced
Produkt ist nicht verfügbar
| MC74HCT32ADR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; 15ns
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 15ns
Family: HCT
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷6VDC; -55÷125°C; 15ns
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Delay time: 15ns
Family: HCT
Produkt ist nicht verfügbar
| MC74HCT32ADTR2G |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; HCT; 2÷6VDC; HCT
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Manufacturer series: HCT
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HCT
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS,TTL; SMD; TSSOP14; HCT; 2÷6VDC; HCT
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: 4
Number of inputs: 2
Technology: CMOS; TTL
Mounting: SMD
Case: TSSOP14
Manufacturer series: HCT
Supply voltage: 2...6V DC
Operating temperature: -55...125°C
Kind of package: reel; tape
Family: HCT
Produkt ist nicht verfügbar
| MM74HCT32M |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Delay time: 10ns
Family: HCT
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 4.5÷5.5VDC; -40÷85°C
Type of integrated circuit: digital
Kind of gate: OR
Number of channels: quad; 4
Number of inputs: 2
Technology: CMOS
Mounting: SMD
Case: SO14
Supply voltage: 4.5...5.5V DC
Operating temperature: -40...85°C
Kind of package: tube
Delay time: 10ns
Family: HCT
auf Bestellung 265 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 63+ | 1.14 EUR |
| 77+ | 0.93 EUR |
| 91+ | 0.79 EUR |
| 156+ | 0.46 EUR |
| 165+ | 0.44 EUR |
| KSP55TA |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.5A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 60V; 0.5A; 0.625W; TO92
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 60V
Collector current: 0.5A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
auf Bestellung 1975 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 275+ | 0.26 EUR |
| 305+ | 0.24 EUR |
| 410+ | 0.17 EUR |
| 435+ | 0.16 EUR |
| MJE253G |
|
Hersteller: ONSEMI
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 4A; 15W; TO225
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 15W
Case: TO225
Current gain: 15...180
Mounting: THT
Kind of package: bulk
Frequency: 40MHz
Category: PNP THT transistors
Description: Transistor: PNP; bipolar; 100V; 4A; 15W; TO225
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 4A
Power dissipation: 15W
Case: TO225
Current gain: 15...180
Mounting: THT
Kind of package: bulk
Frequency: 40MHz
auf Bestellung 472 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 43+ | 1.7 EUR |
| 112+ | 0.64 EUR |
| 126+ | 0.57 EUR |
| 146+ | 0.49 EUR |
| 155+ | 0.46 EUR |
| NCP308MT500TBG |
|
Hersteller: ONSEMI
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; open drain; 1.6÷5.5VDC; WDFN6
Type of integrated circuit: Supervisor Integrated Circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 4.65V
Category: Watchdog and reset circuits
Description: IC: Supervisor Integrated Circuit; open drain; 1.6÷5.5VDC; WDFN6
Type of integrated circuit: Supervisor Integrated Circuit
Kind of integrated circuit: power on reset monitor (PoR)
Kind of RESET output: open drain
Active logical level: low
Supply voltage: 1.6...5.5V DC
Case: WDFN6
Operating temperature: -40...125°C
Mounting: SMD
DC supply current: 6µA
Maximum output current: 5mA
Threshold on-voltage: 4.65V
Produkt ist nicht verfügbar
| NCP716MT50TBG |
|
Hersteller: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 80mA; WDFN6; SMD; ±2%
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 2.5...24V
Output current: 80mA
Type of integrated circuit: voltage regulator
Voltage drop: 0.5V
Output voltage: 5V
Case: WDFN6
Number of channels: 1
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP716
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 80mA; WDFN6; SMD; ±2%
Mounting: SMD
Operating temperature: -40...125°C
Input voltage: 2.5...24V
Output current: 80mA
Type of integrated circuit: voltage regulator
Voltage drop: 0.5V
Output voltage: 5V
Case: WDFN6
Number of channels: 1
Tolerance: ±2%
Kind of voltage regulator: fixed; LDO; linear
Manufacturer series: NCP716
Produkt ist nicht verfügbar
| NCP730BMT500TBG |
|
Hersteller: ONSEMI
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 150mA; WDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.48V
Output voltage: 5V
Output current: 0.15A
Case: WDFN6
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
Manufacturer series: NCP730
Category: LDO unregulated voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 150mA; WDFN6; SMD
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.48V
Output voltage: 5V
Output current: 0.15A
Case: WDFN6
Mounting: SMD
Operating temperature: -40...125°C
Tolerance: ±1%
Number of channels: 1
Input voltage: 2.7...38V
Manufacturer series: NCP730
Produkt ist nicht verfügbar
| CPH6350-TL-W |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6A; Idm: -24A; 1.6W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6A
Pulsed drain current: -24A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -6A; Idm: -24A; 1.6W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -6A
Pulsed drain current: -24A
Power dissipation: 1.6W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| RFD16N05SM9A |
|
Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 16A; 72W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 16A
Power dissipation: 72W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 47mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 16A; 72W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 16A
Power dissipation: 72W
Case: DPAK
Gate-source voltage: ±20V
On-state resistance: 47mΩ
Mounting: SMD
Gate charge: 80nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| DTA114YET1G |
|
Hersteller: ONSEMI
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 0.2W; SC75; R1: 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC75
Current gain: 80...140
Mounting: SMD
Kind of package: reel; tape
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 8875 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 1350+ | 0.053 EUR |
| 1800+ | 0.04 EUR |
| 2000+ | 0.036 EUR |
| 2600+ | 0.028 EUR |
| 2750+ | 0.026 EUR |
| LM2904VDR2G |
|
Hersteller: ONSEMI
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 0.3V/μs
Operating temperature: -40...125°C
Input offset voltage: 10mV
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Kind of package: reel; tape
Input bias current: 50nA
Input offset current: 45...200nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 1MHz; Ch: 2; SO8; ±1.5÷16VDC,3÷32VDC
Type of integrated circuit: operational amplifier
Bandwidth: 1MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 0.3V/μs
Operating temperature: -40...125°C
Input offset voltage: 10mV
Voltage supply range: ± 1.5...16V DC; 3...32V DC
Kind of package: reel; tape
Input bias current: 50nA
Input offset current: 45...200nA
Produkt ist nicht verfügbar
| 74LCXP16245MTDX |
|
Hersteller: ONSEMI
Category: Buffers, transceivers, drivers
Description: IC: digital; 16bit,3-state,bidirectional,transceiver; Ch: 16
Technology: CMOS
Case: TSSOP48
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: LCXR
Operating temperature: -40...85°C
Supply voltage: 1.5...3.6V DC
Kind of integrated circuit: 3-state; 16bit; bidirectional; transceiver
Number of channels: 16
Type of integrated circuit: digital
Kind of output: 3-state
Integrated circuit features: 5V tolerant on inputs/outputs
Family: LCXP
Category: Buffers, transceivers, drivers
Description: IC: digital; 16bit,3-state,bidirectional,transceiver; Ch: 16
Technology: CMOS
Case: TSSOP48
Mounting: SMD
Kind of package: reel; tape
Manufacturer series: LCXR
Operating temperature: -40...85°C
Supply voltage: 1.5...3.6V DC
Kind of integrated circuit: 3-state; 16bit; bidirectional; transceiver
Number of channels: 16
Type of integrated circuit: digital
Kind of output: 3-state
Integrated circuit features: 5V tolerant on inputs/outputs
Family: LCXP
Produkt ist nicht verfügbar
| FDC604P |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.5A; 1.6W; SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Case: SuperSOT-6
On-state resistance: 60mΩ
Power dissipation: 1.6W
Gate charge: 30nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -5.5A
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -5.5A; 1.6W; SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Case: SuperSOT-6
On-state resistance: 60mΩ
Power dissipation: 1.6W
Gate charge: 30nC
Polarisation: unipolar
Technology: PowerTrench®
Drain current: -5.5A
Kind of channel: enhanced
auf Bestellung 2036 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 142+ | 0.5 EUR |
| 212+ | 0.34 EUR |
| 279+ | 0.26 EUR |
| 295+ | 0.24 EUR |
| FDC634P |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.5A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.5A; 1.6W; SuperSOT-6
Type of transistor: P-MOSFET
Technology: PowerTrench®
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.5A
Power dissipation: 1.6W
Case: SuperSOT-6
Gate-source voltage: ±8V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDC654P |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 1.6W; SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Case: SuperSOT-6
On-state resistance: 0.115Ω
Power dissipation: 1.6W
Polarisation: unipolar
Drain current: -3.6A
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; 1.6W; SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Case: SuperSOT-6
On-state resistance: 0.115Ω
Power dissipation: 1.6W
Polarisation: unipolar
Drain current: -3.6A
Kind of channel: enhanced
Produkt ist nicht verfügbar
| FDC6324L |
|
Hersteller: ONSEMI
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 1; P-Channel; SMD; SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Case: SuperSOT-6
Kind of integrated circuit: high-side
Number of channels: 1
Supply voltage: 3...20V DC
Control voltage: 1.5...8V DC
Output current: 1.5A
Type of integrated circuit: power switch
Kind of output: P-Channel
Category: Power switches - integrated circuits
Description: IC: power switch; high-side; 1.5A; Ch: 1; P-Channel; SMD; SuperSOT-6
Mounting: SMD
Kind of package: reel; tape
Case: SuperSOT-6
Kind of integrated circuit: high-side
Number of channels: 1
Supply voltage: 3...20V DC
Control voltage: 1.5...8V DC
Output current: 1.5A
Type of integrated circuit: power switch
Kind of output: P-Channel
auf Bestellung 2700 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 74+ | 0.97 EUR |
| 111+ | 0.64 EUR |
| 168+ | 0.43 EUR |
| 178+ | 0.4 EUR |
| NTGS4111PT1G |
|
Hersteller: ONSEMI
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; 1.25W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Power dissipation: 1.25W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.7A; 1.25W; TSOP6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.7A
Power dissipation: 1.25W
Case: TSOP6
Gate-source voltage: ±20V
On-state resistance: 60mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Produkt ist nicht verfügbar
| BZX84C33LT1G |
|
Hersteller: ONSEMI
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 33V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Category: SMD Zener diodes
Description: Diode: Zener; 0.3W; 33V; SMD; reel,tape; SOT23; single diode
Type of diode: Zener
Power dissipation: 0.3W
Zener voltage: 33V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
auf Bestellung 270 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 270+ | 0.27 EUR |
| 74AC86MTC |
|
Hersteller: ONSEMI
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 20µA
Family: AC
Category: Gates, inverters
Description: IC: digital; XOR; Ch: 4; IN: 2; SMD; TSSOP14; 2÷6VDC; -40÷85°C; tube
Type of integrated circuit: digital
Kind of gate: XOR
Number of channels: quad; 4
Number of inputs: 2
Mounting: SMD
Case: TSSOP14
Supply voltage: 2...6V DC
Operating temperature: -40...85°C
Kind of package: tube
Quiescent current: 20µA
Family: AC
auf Bestellung 226 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 148+ | 0.49 EUR |
| 182+ | 0.39 EUR |
| 226+ | 0.31 EUR |