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| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||
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SIHF18N50D-E3 Produktcode: 188008
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zu Favoriten hinzufügen
Lieblingsprodukt
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Vishay |
 Transistoren > MOSFET N-CHGehäuse: TO-220 Drain-Source-Spannung Uds, V: 550 В Drain-Strom Idd, A: 18 А Durchlasswiderstand Rds(on), Ohm: 0,28 Ом Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 1500/38 Montage: THT |
auf Bestellung: 4 St.
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SPP08N50C3 Produktcode: 113412
2
zu Favoriten hinzufügen
Lieblingsprodukt
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Infineon |
Transistoren > MOSFET N-CH Gehäuse: TO-220 Drain-Source-Spannung Uds, V: 500 В Drain-Strom Idd, A: 7 A Durchlasswiderstand Rds(on), Ohm: 0,6 Ом Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 750/3 Montage: THT |
auf Bestellung: 26 St.
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| 8N50E | PH | 09+ |
auf Bestellung 5030 Stücke: Lieferzeit 21-28 Tag (e) |
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AOT8N50 | ALPHA & OMEGA SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 5.6A; TO220 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 5.6A Case: TO220 Gate-source voltage: ±30V On-state resistance: 0.85Ω Mounting: THT Gate charge: 23.6nC Kind of channel: enhancement |
auf Bestellung 626 Stücke: Lieferzeit 14-21 Tag (e) |
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BD3238N5050AHF | TTM Technologies, Inc. |
Description: BALUN 50 / 50OHM Packaging: Tape & Reel (TR) Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Impedance - Unbalanced/Balanced: 50 / 50Ohm Insertion Loss (Max): 0.9dB Return Loss (Min): 12dB Phase Difference: 3° Part Status: Active |
auf Bestellung 16000 Stücke: Lieferzeit 10-14 Tag (e) |
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BD3238N5050AHF | TTM Technologies, Inc. |
Description: BALUN 50 / 50OHM Packaging: Cut Tape (CT) Package / Case: 4-SMD, No Lead Mounting Type: Surface Mount Impedance - Unbalanced/Balanced: 50 / 50Ohm Insertion Loss (Max): 0.9dB Return Loss (Min): 12dB Phase Difference: 3° Part Status: Active |
auf Bestellung 21365 Stücke: Lieferzeit 10-14 Tag (e) |
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| BD3238N5050AHF | TTM Technologies |
Audio Transformers / Signal Transformers |
auf Bestellung 7800 Stücke: Lieferzeit 10-14 Tag (e) |
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BXP18N50F | BRIDGELUX |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 72A; 42.8W; TO220F Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 12A Pulsed drain current: 72A Power dissipation: 42.8W Case: TO220F Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 674 Stücke: Lieferzeit 14-21 Tag (e) |
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CHV1808N500101KCT | Cal-Chip Electronics, Inc. |
Description: HVCAP1808 COG 100PF 10% 500V Packaging: Tape & Reel (TR) Tolerance: ±10% Features: High Voltage Voltage - Rated: 500V Package / Case: 1808 (4520 Metric) Temperature Coefficient: C0G, NP0 Size / Dimension: 0.181" L x 0.079" W (4.60mm x 2.00mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: General Purpose Thickness (Max): 0.087" (2.20mm) Capacitance: 100 pF |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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CHV1808N500103KXT | Cal-Chip Electronics, Inc. |
Description: HVCAP1808 X7R .01UF 10% 500V Packaging: Cut Tape (CT) Tolerance: ±10% Features: High Voltage Voltage - Rated: 500V Package / Case: 1808 (4520 Metric) Temperature Coefficient: X7R Size / Dimension: 0.181" L x 0.079" W (4.60mm x 2.00mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: SMPS Filtering Thickness (Max): 0.087" (2.20mm) Capacitance: 10000 pF |
auf Bestellung 1988 Stücke: Lieferzeit 10-14 Tag (e) |
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CHV1808N500153KXT | Cal-Chip Electronics, Inc. |
Description: HVCAP1808 X7R .015UF 10% 500V Packaging: Tape & Reel (TR) Tolerance: ±10% Features: High Voltage Voltage - Rated: 500V Package / Case: 1808 (4520 Metric) Temperature Coefficient: X7R Size / Dimension: 0.181" L x 0.079" W (4.60mm x 2.00mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: SMPS Filtering Thickness (Max): 0.087" (2.20mm) Capacitance: 0.015 µF |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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CHV1808N500221JCT | Cal-Chip Electronics, Inc. |
Description: HVCAP1808 COG 220PF 5% 500V Packaging: Tape & Reel (TR) Tolerance: ±5% Features: High Voltage Voltage - Rated: 500V Package / Case: 1808 (4520 Metric) Temperature Coefficient: C0G, NP0 Size / Dimension: 0.181" L x 0.079" W (4.60mm x 2.00mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: SMPS Filtering Thickness (Max): 0.071" (1.80mm) Capacitance: 220 pF |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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CHV1808N500330JCT | Cal-Chip Electronics, Inc. |
Description: HVCAP1808 COG 33PF 5% 500V Packaging: Tape & Reel (TR) Tolerance: ±5% Features: High Voltage Voltage - Rated: 500V Package / Case: 1808 (4520 Metric) Temperature Coefficient: C0G, NP0 Size / Dimension: 0.181" L x 0.079" W (4.60mm x 2.00mm) Mounting Type: Surface Mount, MLCC Operating Temperature: -55°C ~ 125°C Applications: General Purpose Thickness (Max): 0.087" (2.20mm) Capacitance: 33 pF |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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CNX718N50005T | Visual Communications Company - VCC |
Description: LED PNL IND GRN FRESNEL 18.50MM Packaging: Bulk Voltage: 5V Type: LED Millicandela Rating: 2400mcd Termination Style: Quick Connect - 0.187" (4.7mm) Lens Color: Clear Ratings: DC Panel Cutout Dimensions: 0.69" (17.53mm) Lens Transparency: Fresnel Lamp Color: Green Panel Cutout Shape: Round Lens Style: Round with Domed Top Lens Size: 18.50mm Dia |
auf Bestellung 170 Stücke: Lieferzeit 10-14 Tag (e) |
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CNX718N50005T | VCC |
LED Panel Mount Indicators PANEL MNT INDICATOR 18MM GRN 5V TAB |
auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
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CNX718N50005W | Visual Communications Company - VCC |
Description: LED PNL IND GRN FRESNEL 18.50MM Packaging: Bulk Voltage: 5V Type: LED Millicandela Rating: 2400mcd Termination Style: Wire Leads - 6" (152.40mm) Lens Color: Clear Ratings: DC Panel Cutout Dimensions: 0.69" (17.53mm) Lens Transparency: Fresnel Lamp Color: Green Panel Cutout Shape: Round Lens Style: Round with Domed Top Lens Size: 18.50mm Dia |
auf Bestellung 70 Stücke: Lieferzeit 10-14 Tag (e) |
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CNX718N500120T | Visual Communications Company - VCC |
Description: LED PNL IND GRN FRESNEL 18.50MM Packaging: Bulk Voltage: 120V Type: LED Millicandela Rating: 2400mcd Termination Style: Quick Connect - 0.187" (4.7mm) Lens Color: Clear Ratings: AC Panel Cutout Dimensions: 0.69" (17.53mm) Lens Transparency: Fresnel Lamp Color: Green Panel Cutout Shape: Round Lens Style: Round with Domed Top Lens Size: 18.50mm Dia |
auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
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CNX718N500120W | Visual Communications Company - VCC |
Description: LED PNL IND GRN FRESNEL 18.50MM Packaging: Bulk Voltage: 120V Type: LED Millicandela Rating: 2400mcd Termination Style: Wire Leads - 6" (152.40mm) Lens Color: Clear Ratings: AC Panel Cutout Dimensions: 0.69" (17.53mm) Lens Transparency: Fresnel Lamp Color: Green Panel Cutout Shape: Round Lens Style: Round with Domed Top Lens Size: 18.50mm Dia |
auf Bestellung 115 Stücke: Lieferzeit 10-14 Tag (e) |
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CNX718N50012T | Visual Communications Company - VCC |
Description: LED PNL IND GRN FRESNEL 18.50MM Packaging: Bulk Voltage: 12V Type: LED Millicandela Rating: 2400mcd Termination Style: Quick Connect - 0.187" (4.7mm) Lens Color: Clear Ratings: DC Panel Cutout Dimensions: 0.69" (17.53mm) Lens Transparency: Fresnel Lamp Color: Green Panel Cutout Shape: Round Lens Style: Round with Domed Top Lens Size: 18.50mm Dia |
auf Bestellung 186 Stücke: Lieferzeit 10-14 Tag (e) |
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CNX718N50012W | Visual Communications Company - VCC |
Description: LED PNL IND GRN FRESNEL 18.50MM Packaging: Bulk Voltage: 12V Type: LED Millicandela Rating: 2400mcd Termination Style: Wire Leads - 6" (152.40mm) Lens Color: Clear Ratings: DC Panel Cutout Dimensions: 0.69" (17.53mm) Lens Transparency: Fresnel Lamp Color: Green Panel Cutout Shape: Round Lens Style: Round with Domed Top Lens Size: 18.50mm Dia |
auf Bestellung 88 Stücke: Lieferzeit 10-14 Tag (e) |
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CNX718N50028T | Visual Communications Company - VCC |
Description: LED PNL IND GRN FRESNEL 18.50MM Packaging: Bulk Voltage: 28V Type: LED Millicandela Rating: 2400mcd Termination Style: Quick Connect - 0.187" (4.7mm) Lens Color: Clear Ratings: DC Panel Cutout Dimensions: 0.69" (17.53mm) Lens Transparency: Fresnel Lamp Color: Green Panel Cutout Shape: Round Part Status: Active Lens Style: Round with Domed Top Lens Size: 18.50mm Dia |
auf Bestellung 64 Stücke: Lieferzeit 10-14 Tag (e) |
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CNX718N50028W | Visual Communications Company - VCC |
Description: LED PNL IND GRN FRESNEL 18.50MM Packaging: Bulk Voltage: 28V Type: LED Millicandela Rating: 2400mcd Termination Style: Wire Leads - 6" (152.40mm) Lens Color: Clear Ratings: DC Panel Cutout Dimensions: 0.69" (17.53mm) Lens Transparency: Fresnel Lamp Color: Green Panel Cutout Shape: Round Lens Style: Round with Domed Top Lens Size: 18.50mm Dia |
auf Bestellung 124 Stücke: Lieferzeit 10-14 Tag (e) |
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FDA18N50 | Fairchild Semiconductor |
Description: POWER FIELD-EFFECT TRANSISTOR, 1 Packaging: Bulk Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 265mOhm @ 9.5A, 10V Power Dissipation (Max): 239W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 25 V |
auf Bestellung 1564 Stücke: Lieferzeit 10-14 Tag (e) |
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FDA28N50 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 17A; Idm: 112A; 310W; TO3PN Type of transistor: N-MOSFET Technology: DMOS; UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 17A Pulsed drain current: 112A Power dissipation: 310W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 155mΩ Mounting: THT Gate charge: 105nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 28 Stücke: Lieferzeit 14-21 Tag (e) |
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FDA28N50 | onsemi |
Description: MOSFET N-CH 500V 28A TO3PN Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 155mOhm @ 14A, 10V Power Dissipation (Max): 310W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PN Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5140 pF @ 25 V |
auf Bestellung 261 Stücke: Lieferzeit 10-14 Tag (e) |
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FDA28N50 | onsemi |
MOSFETs UniFET 500V |
auf Bestellung 1421 Stücke: Lieferzeit 10-14 Tag (e) |
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FDP18N50 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 235W; TO220AB Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 10.8A Power dissipation: 235W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 265mΩ Mounting: THT Gate charge: 60nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 945 Stücke: Lieferzeit 14-21 Tag (e) |
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FDP18N50 | ON-Semiconductor |
Transistor N-Channel MOSFET; 500V; 30V; 265mOhm; 18A; 235W; -55°C ~ 150°C; FDP18N50 TFDP18n50 Anzahl je Verpackung: 5 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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FDP18N50 | ON-Semiconductor |
Transistor N-Channel MOSFET; 500V; 30V; 265mOhm; 18A; 235W; -55°C ~ 150°C; FDP18N50 TFDP18n50 Anzahl je Verpackung: 5 Stücke |
auf Bestellung 17 Stücke: Lieferzeit 7-14 Tag (e) |
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FDP18N50 | onsemi |
Description: MOSFET N-CH 500V 18A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 265mOhm @ 9A, 10V Power Dissipation (Max): 235W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 25 V |
auf Bestellung 6269 Stücke: Lieferzeit 10-14 Tag (e) |
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FDP18N50 | onsemi |
MOSFETs 500V N-Channel PowerTrench MOSFET |
auf Bestellung 1841 Stücke: Lieferzeit 10-14 Tag (e) |
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FDPF18N50 | ON-Semiconductor |
Transistor N-Channel MOSFET; 500V; 30V; 265mOhm; 18A; 38,5W; -55°C ~ 150°C; FDPF18N50 TFDPF18n50 Anzahl je Verpackung: 3 Stücke |
auf Bestellung 6 Stücke: Lieferzeit 7-14 Tag (e) |
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FDPF18N50 | onsemi |
MOSFETs 500V N-CH MOSFET |
auf Bestellung 1338 Stücke: Lieferzeit 10-14 Tag (e) |
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FDPF18N50 | onsemi |
Description: MOSFET N-CH 500V 18A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 265mOhm @ 9A, 10V Power Dissipation (Max): 38.5W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 25 V |
auf Bestellung 9214 Stücke: Lieferzeit 10-14 Tag (e) |
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FDPF18N50T | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP Type of transistor: N-MOSFET Technology: UniFET™ Polarisation: unipolar Drain-source voltage: 500V Drain current: 10.8A Power dissipation: 38.5W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 265mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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FDPF18N50T | onsemi |
MOSFETs 500V N-Channel PowerTrench MOSFET |
auf Bestellung 1142 Stücke: Lieferzeit 10-14 Tag (e) |
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FDPF18N50T | onsemi |
Description: MOSFET N-CH 500V 18A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 265mOhm @ 9A, 10V Power Dissipation (Max): 38.5W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 25 V |
auf Bestellung 412 Stücke: Lieferzeit 10-14 Tag (e) |
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FDPF8N50NZU | Fairchild Semiconductor |
Description: POWER FIELD-EFFECT TRANSISTOR, 6 Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 25 V |
auf Bestellung 3685 Stücke: Lieferzeit 10-14 Tag (e) |
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FQA18N50V2 | Fairchild Semiconductor |
Description: MOSFET N-CH 500V 20A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 265mOhm @ 10A, 10V Power Dissipation (Max): 277W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3P Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V |
auf Bestellung 380 Stücke: Lieferzeit 10-14 Tag (e) |
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FQA28N50-ON | onsemi |
Description: 28.4A, 500V, 0.16OHM, N-CHANNEL Packaging: Bulk Part Status: Active |
auf Bestellung 3863 Stücke: Lieferzeit 10-14 Tag (e) |
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FQH18N50V2 | Fairchild Semiconductor |
Description: MOSFET N-CH 500V 20A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 265mOhm @ 10A, 10V Power Dissipation (Max): 277W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V |
auf Bestellung 4058 Stücke: Lieferzeit 10-14 Tag (e) |
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FQP18N50V2 | Fairchild Semiconductor |
 Description: MOSFET N-CH 500V 18A TO220-3Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 265mOhm @ 9A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V |
auf Bestellung 532 Stücke: Lieferzeit 10-14 Tag (e) |
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FQPF18N50V2SDTU | Fairchild Semiconductor |
Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tj) Rds On (Max) @ Id, Vgs: 265mOhm @ 9A, 10V Power Dissipation (Max): 69W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V |
auf Bestellung 4845 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFK48N50 | IXYS |
Description: MOSFET N-CH 500V 48A TO264AA Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 24A, 10V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 4V @ 8mA Supplier Device Package: TO-264AA (IXFK) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V |
auf Bestellung 1824 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFK78N50P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 78A; 1130W; TO264 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 78A Power dissipation: 1.13kW Case: TO264 On-state resistance: 68mΩ Mounting: THT Gate charge: 147nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFK78N50P3 | IXYS |
Description: MOSFET N-CH 500V 78A TO264AA Packaging: Tube Package / Case: TO-264-3, TO-264AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 78A (Tc) Rds On (Max) @ Id, Vgs: 68mOhm @ 500mA, 10V Power Dissipation (Max): 1130W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: TO-264AA (IXFK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 25 V |
auf Bestellung 760 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFK78N50P3 | IXYS |
MOSFETs 500V 78A 0.068Ohm PolarP3 Power MOSFET |
auf Bestellung 3 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFK98N50P3 | IXYS |
MOSFETs 500V 98A 0.05Ohm PolarP3 Power MOSFET |
auf Bestellung 242 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN48N50 | IXYS |
Description: MOSFET N-CH 500V 48A SOT-227B Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 10V Power Dissipation (Max): 520W (Tc) Vgs(th) (Max) @ Id: 4V @ 8mA Supplier Device Package: SOT-227B Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V |
auf Bestellung 280 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN48N50 | IXYS |
MOSFET Modules 500V 48A |
auf Bestellung 1298 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFX78N50P3 | IXYS |
MOSFETs 500V 78A 0.068Ohm PolarP3 Power MOSFET |
auf Bestellung 150 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFX98N50P3 | IXYS |
Description: MOSFET N-CH 500V 98A PLUS247-3 Packaging: Tube Package / Case: TO-247-3 Variant Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 98A (Tc) Rds On (Max) @ Id, Vgs: 50mOhm @ 500mA, 10V Power Dissipation (Max): 1300W (Tc) Vgs(th) (Max) @ Id: 5V @ 8mA Supplier Device Package: PLUS247™-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V |
auf Bestellung 618 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTA08N50D2 | IXYS |
Description: MOSFET N-CH 500V 800MA TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel, Depletion Mode Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Rds On (Max) @ Id, Vgs: 4.6Ohm @ 400mA, 0V Power Dissipation (Max): 60W (Tc) Supplier Device Package: TO-263AA Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V |
auf Bestellung 152 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTA08N50D2 | IXYS |
MOSFETs N-CH MOSFETS (D2) 500V 800MA |
auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP08N50D2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO220AB; 11ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 0.8A Power dissipation: 60W Case: TO220AB On-state resistance: 4.6Ω Mounting: THT Gate charge: 312nC Kind of package: tube Kind of channel: depletion Reverse recovery time: 11ns |
auf Bestellung 262 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTP08N50D2 | IXYS |
MOSFETs N-CH MOSFETS 500V 800MA |
auf Bestellung 480 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP08N50D2 | IXYS |
Description: MOSFET N-CH 500V 800MA TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel, Depletion Mode Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Rds On (Max) @ Id, Vgs: 4.6Ohm @ 400mA, 0V Power Dissipation (Max): 60W (Tc) Supplier Device Package: TO-220-3 Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V |
auf Bestellung 400 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTY08N50D2 | IXYS |
MOSFETs N-CH MOSFETS 500V 800MA |
auf Bestellung 21506 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTY08N50D2 | IXYS |
Description: MOSFET N-CH 500V 800MA TO252 Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel, Depletion Mode Current - Continuous Drain (Id) @ 25°C: 800mA (Tc) Rds On (Max) @ Id, Vgs: 4.6Ohm @ 400mA, 0V Power Dissipation (Max): 60W (Tc) Supplier Device Package: TO-252AA Part Status: Active Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V |
auf Bestellung 2130 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTY08N50D2-TRL | IXYS |
MOSFET Modules DISCRETE SEMICONDUCTOR MODULES |
auf Bestellung 2234 Stücke: Lieferzeit 10-14 Tag (e) |
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| SIHF18N50D-E3 Produktcode: 188008
1
zu Favoriten hinzufügen
Lieblingsprodukt
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|
Hersteller: Vishay
Transistoren > MOSFET N-CH
Gehäuse: TO-220
Drain-Source-Spannung Uds, V: 550 В
Drain-Strom Idd, A: 18 А
Durchlasswiderstand Rds(on), Ohm: 0,28 Ом
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 1500/38
Montage: THT
Transistoren > MOSFET N-CH
Gehäuse: TO-220
Drain-Source-Spannung Uds, V: 550 В
Drain-Strom Idd, A: 18 А
Durchlasswiderstand Rds(on), Ohm: 0,28 Ом
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 1500/38
Montage: THT
auf Bestellung: 4 St.
- 4 St. - Lieferzeit 21-28 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.22 EUR |
| 10+ | 7.64 EUR |
| SPP08N50C3 Produktcode: 113412
2
zu Favoriten hinzufügen
Lieblingsprodukt
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|
Hersteller: Infineon
Transistoren > MOSFET N-CH
Gehäuse: TO-220
Drain-Source-Spannung Uds, V: 500 В
Drain-Strom Idd, A: 7 A
Durchlasswiderstand Rds(on), Ohm: 0,6 Ом
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 750/3
Montage: THT
Transistoren > MOSFET N-CH
Gehäuse: TO-220
Drain-Source-Spannung Uds, V: 500 В
Drain-Strom Idd, A: 7 A
Durchlasswiderstand Rds(on), Ohm: 0,6 Ом
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 750/3
Montage: THT
auf Bestellung: 26 St.
- 26 St. - Lieferzeit 21-28 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 2.03 EUR |
| 10+ | 1.84 EUR |
| 8N50E |
Hersteller: PH
09+
09+
auf Bestellung 5030 Stücke:
Lieferzeit 21-28 Tag (e)
| AOT8N50 |
|
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.6A; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.6A
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 23.6nC
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.6A; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.6A
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 23.6nC
Kind of channel: enhancement
auf Bestellung 626 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 52+ | 1.67 EUR |
| 95+ | 0.9 EUR |
| 101+ | 0.84 EUR |
| BD3238N5050AHF |
|
Hersteller: TTM Technologies, Inc.
Description: BALUN 50 / 50OHM
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Impedance - Unbalanced/Balanced: 50 / 50Ohm
Insertion Loss (Max): 0.9dB
Return Loss (Min): 12dB
Phase Difference: 3°
Part Status: Active
Description: BALUN 50 / 50OHM
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Impedance - Unbalanced/Balanced: 50 / 50Ohm
Insertion Loss (Max): 0.9dB
Return Loss (Min): 12dB
Phase Difference: 3°
Part Status: Active
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4000+ | 0.51 EUR |
| 8000+ | 0.45 EUR |
| BD3238N5050AHF |
|
Hersteller: TTM Technologies, Inc.
Description: BALUN 50 / 50OHM
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Impedance - Unbalanced/Balanced: 50 / 50Ohm
Insertion Loss (Max): 0.9dB
Return Loss (Min): 12dB
Phase Difference: 3°
Part Status: Active
Description: BALUN 50 / 50OHM
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Impedance - Unbalanced/Balanced: 50 / 50Ohm
Insertion Loss (Max): 0.9dB
Return Loss (Min): 12dB
Phase Difference: 3°
Part Status: Active
auf Bestellung 21365 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 1.05 EUR |
| 23+ | 0.95 EUR |
| 25+ | 0.92 EUR |
| 50+ | 0.89 EUR |
| 100+ | 0.86 EUR |
| 250+ | 0.83 EUR |
| 500+ | 0.81 EUR |
| 1000+ | 0.77 EUR |
| BD3238N5050AHF |
|
Hersteller: TTM Technologies
Audio Transformers / Signal Transformers
Audio Transformers / Signal Transformers
auf Bestellung 7800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 1.02 EUR |
| 10+ | 0.87 EUR |
| 100+ | 0.82 EUR |
| 250+ | 0.79 EUR |
| 500+ | 0.76 EUR |
| 1000+ | 0.74 EUR |
| 2500+ | 0.5 EUR |
| BXP18N50F |
|
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 72A; 42.8W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 72A
Power dissipation: 42.8W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 72A; 42.8W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 72A
Power dissipation: 42.8W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 674 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 39+ | 2.21 EUR |
| 49+ | 1.76 EUR |
| 54+ | 1.58 EUR |
| 100+ | 1.33 EUR |
| 250+ | 1.2 EUR |
| 500+ | 1.06 EUR |
| CHV1808N500101KCT |
|
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP1808 COG 100PF 10% 500V
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Features: High Voltage
Voltage - Rated: 500V
Package / Case: 1808 (4520 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.079" W (4.60mm x 2.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Thickness (Max): 0.087" (2.20mm)
Capacitance: 100 pF
Description: HVCAP1808 COG 100PF 10% 500V
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Features: High Voltage
Voltage - Rated: 500V
Package / Case: 1808 (4520 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.079" W (4.60mm x 2.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Thickness (Max): 0.087" (2.20mm)
Capacitance: 100 pF
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.68 EUR |
| CHV1808N500103KXT |
|
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP1808 X7R .01UF 10% 500V
Packaging: Cut Tape (CT)
Tolerance: ±10%
Features: High Voltage
Voltage - Rated: 500V
Package / Case: 1808 (4520 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.181" L x 0.079" W (4.60mm x 2.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.087" (2.20mm)
Capacitance: 10000 pF
Description: HVCAP1808 X7R .01UF 10% 500V
Packaging: Cut Tape (CT)
Tolerance: ±10%
Features: High Voltage
Voltage - Rated: 500V
Package / Case: 1808 (4520 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.181" L x 0.079" W (4.60mm x 2.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.087" (2.20mm)
Capacitance: 10000 pF
auf Bestellung 1988 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.52 EUR |
| 10+ | 2.38 EUR |
| 50+ | 1.92 EUR |
| 100+ | 1.77 EUR |
| 500+ | 1.54 EUR |
| 1000+ | 1.46 EUR |
| CHV1808N500153KXT |
|
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP1808 X7R .015UF 10% 500V
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Features: High Voltage
Voltage - Rated: 500V
Package / Case: 1808 (4520 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.181" L x 0.079" W (4.60mm x 2.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.087" (2.20mm)
Capacitance: 0.015 µF
Description: HVCAP1808 X7R .015UF 10% 500V
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Features: High Voltage
Voltage - Rated: 500V
Package / Case: 1808 (4520 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.181" L x 0.079" W (4.60mm x 2.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.087" (2.20mm)
Capacitance: 0.015 µF
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 0.95 EUR |
| CHV1808N500221JCT |
|
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP1808 COG 220PF 5% 500V
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Features: High Voltage
Voltage - Rated: 500V
Package / Case: 1808 (4520 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.079" W (4.60mm x 2.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.071" (1.80mm)
Capacitance: 220 pF
Description: HVCAP1808 COG 220PF 5% 500V
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Features: High Voltage
Voltage - Rated: 500V
Package / Case: 1808 (4520 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.079" W (4.60mm x 2.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.071" (1.80mm)
Capacitance: 220 pF
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 0.9 EUR |
| CHV1808N500330JCT |
|
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP1808 COG 33PF 5% 500V
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Features: High Voltage
Voltage - Rated: 500V
Package / Case: 1808 (4520 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.079" W (4.60mm x 2.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Thickness (Max): 0.087" (2.20mm)
Capacitance: 33 pF
Description: HVCAP1808 COG 33PF 5% 500V
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Features: High Voltage
Voltage - Rated: 500V
Package / Case: 1808 (4520 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.079" W (4.60mm x 2.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Thickness (Max): 0.087" (2.20mm)
Capacitance: 33 pF
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2000+ | 0.7 EUR |
| CNX718N50005T |
|
Hersteller: Visual Communications Company - VCC
Description: LED PNL IND GRN FRESNEL 18.50MM
Packaging: Bulk
Voltage: 5V
Type: LED
Millicandela Rating: 2400mcd
Termination Style: Quick Connect - 0.187" (4.7mm)
Lens Color: Clear
Ratings: DC
Panel Cutout Dimensions: 0.69" (17.53mm)
Lens Transparency: Fresnel
Lamp Color: Green
Panel Cutout Shape: Round
Lens Style: Round with Domed Top
Lens Size: 18.50mm Dia
Description: LED PNL IND GRN FRESNEL 18.50MM
Packaging: Bulk
Voltage: 5V
Type: LED
Millicandela Rating: 2400mcd
Termination Style: Quick Connect - 0.187" (4.7mm)
Lens Color: Clear
Ratings: DC
Panel Cutout Dimensions: 0.69" (17.53mm)
Lens Transparency: Fresnel
Lamp Color: Green
Panel Cutout Shape: Round
Lens Style: Round with Domed Top
Lens Size: 18.50mm Dia
auf Bestellung 170 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 47.43 EUR |
| 10+ | 38.01 EUR |
| 100+ | 32.55 EUR |
| CNX718N50005T |
|
Hersteller: VCC
LED Panel Mount Indicators PANEL MNT INDICATOR 18MM GRN 5V TAB
LED Panel Mount Indicators PANEL MNT INDICATOR 18MM GRN 5V TAB
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 45.8 EUR |
| 10+ | 31.69 EUR |
| 100+ | 28.94 EUR |
| 500+ | 28.38 EUR |
| CNX718N50005W |
|
Hersteller: Visual Communications Company - VCC
Description: LED PNL IND GRN FRESNEL 18.50MM
Packaging: Bulk
Voltage: 5V
Type: LED
Millicandela Rating: 2400mcd
Termination Style: Wire Leads - 6" (152.40mm)
Lens Color: Clear
Ratings: DC
Panel Cutout Dimensions: 0.69" (17.53mm)
Lens Transparency: Fresnel
Lamp Color: Green
Panel Cutout Shape: Round
Lens Style: Round with Domed Top
Lens Size: 18.50mm Dia
Description: LED PNL IND GRN FRESNEL 18.50MM
Packaging: Bulk
Voltage: 5V
Type: LED
Millicandela Rating: 2400mcd
Termination Style: Wire Leads - 6" (152.40mm)
Lens Color: Clear
Ratings: DC
Panel Cutout Dimensions: 0.69" (17.53mm)
Lens Transparency: Fresnel
Lamp Color: Green
Panel Cutout Shape: Round
Lens Style: Round with Domed Top
Lens Size: 18.50mm Dia
auf Bestellung 70 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 47.43 EUR |
| 10+ | 38.01 EUR |
| CNX718N500120T |
|
Hersteller: Visual Communications Company - VCC
Description: LED PNL IND GRN FRESNEL 18.50MM
Packaging: Bulk
Voltage: 120V
Type: LED
Millicandela Rating: 2400mcd
Termination Style: Quick Connect - 0.187" (4.7mm)
Lens Color: Clear
Ratings: AC
Panel Cutout Dimensions: 0.69" (17.53mm)
Lens Transparency: Fresnel
Lamp Color: Green
Panel Cutout Shape: Round
Lens Style: Round with Domed Top
Lens Size: 18.50mm Dia
Description: LED PNL IND GRN FRESNEL 18.50MM
Packaging: Bulk
Voltage: 120V
Type: LED
Millicandela Rating: 2400mcd
Termination Style: Quick Connect - 0.187" (4.7mm)
Lens Color: Clear
Ratings: AC
Panel Cutout Dimensions: 0.69" (17.53mm)
Lens Transparency: Fresnel
Lamp Color: Green
Panel Cutout Shape: Round
Lens Style: Round with Domed Top
Lens Size: 18.50mm Dia
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 47.43 EUR |
| 10+ | 38.01 EUR |
| 100+ | 32.55 EUR |
| CNX718N500120W |
|
Hersteller: Visual Communications Company - VCC
Description: LED PNL IND GRN FRESNEL 18.50MM
Packaging: Bulk
Voltage: 120V
Type: LED
Millicandela Rating: 2400mcd
Termination Style: Wire Leads - 6" (152.40mm)
Lens Color: Clear
Ratings: AC
Panel Cutout Dimensions: 0.69" (17.53mm)
Lens Transparency: Fresnel
Lamp Color: Green
Panel Cutout Shape: Round
Lens Style: Round with Domed Top
Lens Size: 18.50mm Dia
Description: LED PNL IND GRN FRESNEL 18.50MM
Packaging: Bulk
Voltage: 120V
Type: LED
Millicandela Rating: 2400mcd
Termination Style: Wire Leads - 6" (152.40mm)
Lens Color: Clear
Ratings: AC
Panel Cutout Dimensions: 0.69" (17.53mm)
Lens Transparency: Fresnel
Lamp Color: Green
Panel Cutout Shape: Round
Lens Style: Round with Domed Top
Lens Size: 18.50mm Dia
auf Bestellung 115 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 47.43 EUR |
| 10+ | 38.01 EUR |
| 100+ | 32.55 EUR |
| CNX718N50012T |
|
Hersteller: Visual Communications Company - VCC
Description: LED PNL IND GRN FRESNEL 18.50MM
Packaging: Bulk
Voltage: 12V
Type: LED
Millicandela Rating: 2400mcd
Termination Style: Quick Connect - 0.187" (4.7mm)
Lens Color: Clear
Ratings: DC
Panel Cutout Dimensions: 0.69" (17.53mm)
Lens Transparency: Fresnel
Lamp Color: Green
Panel Cutout Shape: Round
Lens Style: Round with Domed Top
Lens Size: 18.50mm Dia
Description: LED PNL IND GRN FRESNEL 18.50MM
Packaging: Bulk
Voltage: 12V
Type: LED
Millicandela Rating: 2400mcd
Termination Style: Quick Connect - 0.187" (4.7mm)
Lens Color: Clear
Ratings: DC
Panel Cutout Dimensions: 0.69" (17.53mm)
Lens Transparency: Fresnel
Lamp Color: Green
Panel Cutout Shape: Round
Lens Style: Round with Domed Top
Lens Size: 18.50mm Dia
auf Bestellung 186 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 47.43 EUR |
| 10+ | 38.01 EUR |
| 100+ | 32.55 EUR |
| CNX718N50012W |
|
Hersteller: Visual Communications Company - VCC
Description: LED PNL IND GRN FRESNEL 18.50MM
Packaging: Bulk
Voltage: 12V
Type: LED
Millicandela Rating: 2400mcd
Termination Style: Wire Leads - 6" (152.40mm)
Lens Color: Clear
Ratings: DC
Panel Cutout Dimensions: 0.69" (17.53mm)
Lens Transparency: Fresnel
Lamp Color: Green
Panel Cutout Shape: Round
Lens Style: Round with Domed Top
Lens Size: 18.50mm Dia
Description: LED PNL IND GRN FRESNEL 18.50MM
Packaging: Bulk
Voltage: 12V
Type: LED
Millicandela Rating: 2400mcd
Termination Style: Wire Leads - 6" (152.40mm)
Lens Color: Clear
Ratings: DC
Panel Cutout Dimensions: 0.69" (17.53mm)
Lens Transparency: Fresnel
Lamp Color: Green
Panel Cutout Shape: Round
Lens Style: Round with Domed Top
Lens Size: 18.50mm Dia
auf Bestellung 88 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 47.43 EUR |
| 10+ | 38.01 EUR |
| CNX718N50028T |
|
Hersteller: Visual Communications Company - VCC
Description: LED PNL IND GRN FRESNEL 18.50MM
Packaging: Bulk
Voltage: 28V
Type: LED
Millicandela Rating: 2400mcd
Termination Style: Quick Connect - 0.187" (4.7mm)
Lens Color: Clear
Ratings: DC
Panel Cutout Dimensions: 0.69" (17.53mm)
Lens Transparency: Fresnel
Lamp Color: Green
Panel Cutout Shape: Round
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 18.50mm Dia
Description: LED PNL IND GRN FRESNEL 18.50MM
Packaging: Bulk
Voltage: 28V
Type: LED
Millicandela Rating: 2400mcd
Termination Style: Quick Connect - 0.187" (4.7mm)
Lens Color: Clear
Ratings: DC
Panel Cutout Dimensions: 0.69" (17.53mm)
Lens Transparency: Fresnel
Lamp Color: Green
Panel Cutout Shape: Round
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 18.50mm Dia
auf Bestellung 64 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 47.43 EUR |
| 10+ | 38.01 EUR |
| CNX718N50028W |
|
Hersteller: Visual Communications Company - VCC
Description: LED PNL IND GRN FRESNEL 18.50MM
Packaging: Bulk
Voltage: 28V
Type: LED
Millicandela Rating: 2400mcd
Termination Style: Wire Leads - 6" (152.40mm)
Lens Color: Clear
Ratings: DC
Panel Cutout Dimensions: 0.69" (17.53mm)
Lens Transparency: Fresnel
Lamp Color: Green
Panel Cutout Shape: Round
Lens Style: Round with Domed Top
Lens Size: 18.50mm Dia
Description: LED PNL IND GRN FRESNEL 18.50MM
Packaging: Bulk
Voltage: 28V
Type: LED
Millicandela Rating: 2400mcd
Termination Style: Wire Leads - 6" (152.40mm)
Lens Color: Clear
Ratings: DC
Panel Cutout Dimensions: 0.69" (17.53mm)
Lens Transparency: Fresnel
Lamp Color: Green
Panel Cutout Shape: Round
Lens Style: Round with Domed Top
Lens Size: 18.50mm Dia
auf Bestellung 124 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 47.43 EUR |
| 10+ | 38.01 EUR |
| 100+ | 32.55 EUR |
| FDA18N50 |
|
Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 265mOhm @ 9.5A, 10V
Power Dissipation (Max): 239W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 25 V
Description: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 265mOhm @ 9.5A, 10V
Power Dissipation (Max): 239W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 25 V
auf Bestellung 1564 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 156+ | 3.53 EUR |
| FDA28N50 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 17A; Idm: 112A; 310W; TO3PN
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 17A
Pulsed drain current: 112A
Power dissipation: 310W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 155mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 17A; Idm: 112A; 310W; TO3PN
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 17A
Pulsed drain current: 112A
Power dissipation: 310W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 155mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 7.21 EUR |
| 18+ | 4.97 EUR |
| FDA28N50 |
|
Hersteller: onsemi
Description: MOSFET N-CH 500V 28A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 14A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5140 pF @ 25 V
Description: MOSFET N-CH 500V 28A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 14A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5140 pF @ 25 V
auf Bestellung 261 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 10.95 EUR |
| 30+ | 6.21 EUR |
| 120+ | 5.18 EUR |
| FDA28N50 |
|
Hersteller: onsemi
MOSFETs UniFET 500V
MOSFETs UniFET 500V
auf Bestellung 1421 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.75 EUR |
| 10+ | 6.12 EUR |
| FDP18N50 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 235W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 235W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 235W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 235W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 945 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 19+ | 4.68 EUR |
| 20+ | 4.28 EUR |
| 25+ | 3.53 EUR |
| 50+ | 2.55 EUR |
| FDP18N50 |
|
Hersteller: ON-Semiconductor
Transistor N-Channel MOSFET; 500V; 30V; 265mOhm; 18A; 235W; -55°C ~ 150°C; FDP18N50 TFDP18n50
Anzahl je Verpackung: 5 Stücke
Transistor N-Channel MOSFET; 500V; 30V; 265mOhm; 18A; 235W; -55°C ~ 150°C; FDP18N50 TFDP18n50
Anzahl je Verpackung: 5 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 6.13 EUR |
| FDP18N50 |
|
Hersteller: ON-Semiconductor
Transistor N-Channel MOSFET; 500V; 30V; 265mOhm; 18A; 235W; -55°C ~ 150°C; FDP18N50 TFDP18n50
Anzahl je Verpackung: 5 Stücke
Transistor N-Channel MOSFET; 500V; 30V; 265mOhm; 18A; 235W; -55°C ~ 150°C; FDP18N50 TFDP18n50
Anzahl je Verpackung: 5 Stücke
auf Bestellung 17 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 6.13 EUR |
| FDP18N50 |
|
Hersteller: onsemi
Description: MOSFET N-CH 500V 18A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 265mOhm @ 9A, 10V
Power Dissipation (Max): 235W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 25 V
Description: MOSFET N-CH 500V 18A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 265mOhm @ 9A, 10V
Power Dissipation (Max): 235W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 25 V
auf Bestellung 6269 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.16 EUR |
| 10+ | 5.39 EUR |
| 50+ | 4.21 EUR |
| 100+ | 3.82 EUR |
| 500+ | 3.15 EUR |
| FDP18N50 |
|
Hersteller: onsemi
MOSFETs 500V N-Channel PowerTrench MOSFET
MOSFETs 500V N-Channel PowerTrench MOSFET
auf Bestellung 1841 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.08 EUR |
| 10+ | 5.32 EUR |
| 100+ | 3.94 EUR |
| FDPF18N50 |
|
Hersteller: ON-Semiconductor
Transistor N-Channel MOSFET; 500V; 30V; 265mOhm; 18A; 38,5W; -55°C ~ 150°C; FDPF18N50 TFDPF18n50
Anzahl je Verpackung: 3 Stücke
Transistor N-Channel MOSFET; 500V; 30V; 265mOhm; 18A; 38,5W; -55°C ~ 150°C; FDPF18N50 TFDPF18n50
Anzahl je Verpackung: 3 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 10.6 EUR |
| FDPF18N50 |
|
Hersteller: onsemi
MOSFETs 500V N-CH MOSFET
MOSFETs 500V N-CH MOSFET
auf Bestellung 1338 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.77 EUR |
| 10+ | 4 EUR |
| FDPF18N50 |
|
Hersteller: onsemi
Description: MOSFET N-CH 500V 18A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 265mOhm @ 9A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 25 V
Description: MOSFET N-CH 500V 18A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 265mOhm @ 9A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 25 V
auf Bestellung 9214 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.92 EUR |
| 10+ | 5.9 EUR |
| 50+ | 4.61 EUR |
| 100+ | 4.19 EUR |
| 500+ | 3.46 EUR |
| FDPF18N50T |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 5.66 EUR |
| FDPF18N50T |
|
Hersteller: onsemi
MOSFETs 500V N-Channel PowerTrench MOSFET
MOSFETs 500V N-Channel PowerTrench MOSFET
auf Bestellung 1142 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.65 EUR |
| 10+ | 4.49 EUR |
| FDPF18N50T |
|
Hersteller: onsemi
Description: MOSFET N-CH 500V 18A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 265mOhm @ 9A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 25 V
Description: MOSFET N-CH 500V 18A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 265mOhm @ 9A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 25 V
auf Bestellung 412 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.84 EUR |
| 10+ | 5.87 EUR |
| 50+ | 4.59 EUR |
| 100+ | 4.18 EUR |
| FDPF8N50NZU |
|
Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 6
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 25 V
Description: POWER FIELD-EFFECT TRANSISTOR, 6
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 25 V
auf Bestellung 3685 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 205+ | 2.68 EUR |
| FQA18N50V2 |
|
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 500V 20A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 265mOhm @ 10A, 10V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
Description: MOSFET N-CH 500V 20A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 265mOhm @ 10A, 10V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
auf Bestellung 380 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 86+ | 6.41 EUR |
| FQA28N50-ON |
|
auf Bestellung 3863 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 96+ | 5.75 EUR |
| FQH18N50V2 |
|
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 500V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 265mOhm @ 10A, 10V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
Description: MOSFET N-CH 500V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 265mOhm @ 10A, 10V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
auf Bestellung 4058 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 87+ | 6.3 EUR |
| FQP18N50V2 |
|
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 500V 18A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 265mOhm @ 9A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
Description: MOSFET N-CH 500V 18A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 265mOhm @ 9A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
auf Bestellung 532 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 60+ | 9.1 EUR |
| FQPF18N50V2SDTU |
|
Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tj)
Rds On (Max) @ Id, Vgs: 265mOhm @ 9A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tj)
Rds On (Max) @ Id, Vgs: 265mOhm @ 9A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
auf Bestellung 4845 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 173+ | 3.19 EUR |
| IXFK48N50 |
|
Hersteller: IXYS
Description: MOSFET N-CH 500V 48A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 24A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Description: MOSFET N-CH 500V 48A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 24A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
auf Bestellung 1824 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 59.74 EUR |
| 25+ | 39.67 EUR |
| 100+ | 35.28 EUR |
| IXFK78N50P3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 78A; 1130W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 78A
Power dissipation: 1.13kW
Case: TO264
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 78A; 1130W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 78A
Power dissipation: 1.13kW
Case: TO264
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 21.84 EUR |
| IXFK78N50P3 |
|
Hersteller: IXYS
Description: MOSFET N-CH 500V 78A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 500mA, 10V
Power Dissipation (Max): 1130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 25 V
Description: MOSFET N-CH 500V 78A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 500mA, 10V
Power Dissipation (Max): 1130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 25 V
auf Bestellung 760 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 51.18 EUR |
| 25+ | 33.56 EUR |
| 100+ | 29.38 EUR |
| 500+ | 29.04 EUR |
| IXFK78N50P3 |
|
Hersteller: IXYS
MOSFETs 500V 78A 0.068Ohm PolarP3 Power MOSFET
MOSFETs 500V 78A 0.068Ohm PolarP3 Power MOSFET
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 51.88 EUR |
| 10+ | 34.64 EUR |
| 100+ | 34.41 EUR |
| IXFK98N50P3 |
|
Hersteller: IXYS
MOSFETs 500V 98A 0.05Ohm PolarP3 Power MOSFET
MOSFETs 500V 98A 0.05Ohm PolarP3 Power MOSFET
auf Bestellung 242 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 44.82 EUR |
| 10+ | 34.14 EUR |
| 100+ | 29.71 EUR |
| 500+ | 28.08 EUR |
| IXFN48N50 |
|
Hersteller: IXYS
Description: MOSFET N-CH 500V 48A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
Description: MOSFET N-CH 500V 48A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
auf Bestellung 280 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 75.1 EUR |
| 10+ | 62.93 EUR |
| IXFN48N50 |
|
Hersteller: IXYS
MOSFET Modules 500V 48A
MOSFET Modules 500V 48A
auf Bestellung 1298 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 73.68 EUR |
| 10+ | 63.19 EUR |
| IXFX78N50P3 |
|
Hersteller: IXYS
MOSFETs 500V 78A 0.068Ohm PolarP3 Power MOSFET
MOSFETs 500V 78A 0.068Ohm PolarP3 Power MOSFET
auf Bestellung 150 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 34.81 EUR |
| 10+ | 24.15 EUR |
| 120+ | 20.44 EUR |
| 510+ | 20.31 EUR |
| IXFX98N50P3 |
|
Hersteller: IXYS
Description: MOSFET N-CH 500V 98A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 500mA, 10V
Power Dissipation (Max): 1300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
Description: MOSFET N-CH 500V 98A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 500mA, 10V
Power Dissipation (Max): 1300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
auf Bestellung 618 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 44.46 EUR |
| 30+ | 28.25 EUR |
| 120+ | 24.7 EUR |
| 510+ | 24.29 EUR |
| IXTA08N50D2 |
|
Hersteller: IXYS
Description: MOSFET N-CH 500V 800MA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 4.6Ohm @ 400mA, 0V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-263AA
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V
Description: MOSFET N-CH 500V 800MA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 4.6Ohm @ 400mA, 0V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-263AA
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V
auf Bestellung 152 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.65 EUR |
| 50+ | 4.44 EUR |
| 100+ | 4.03 EUR |
| IXTA08N50D2 |
|
Hersteller: IXYS
MOSFETs N-CH MOSFETS (D2) 500V 800MA
MOSFETs N-CH MOSFETS (D2) 500V 800MA
auf Bestellung 6 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.48 EUR |
| 10+ | 4.33 EUR |
| 100+ | 3.94 EUR |
| 500+ | 3.36 EUR |
| IXTP08N50D2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO220AB; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO220AB
On-state resistance: 4.6Ω
Mounting: THT
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO220AB; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO220AB
On-state resistance: 4.6Ω
Mounting: THT
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
auf Bestellung 262 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 19+ | 4.56 EUR |
| 22+ | 3.93 EUR |
| 27+ | 3.21 EUR |
| 50+ | 2.58 EUR |
| 100+ | 2.26 EUR |
| IXTP08N50D2 |
|
Hersteller: IXYS
MOSFETs N-CH MOSFETS 500V 800MA
MOSFETs N-CH MOSFETS 500V 800MA
auf Bestellung 480 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.44 EUR |
| 10+ | 3.81 EUR |
| 100+ | 3.25 EUR |
| 500+ | 3.01 EUR |
| IXTP08N50D2 |
|
Hersteller: IXYS
Description: MOSFET N-CH 500V 800MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 4.6Ohm @ 400mA, 0V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-220-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V
Description: MOSFET N-CH 500V 800MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 4.6Ohm @ 400mA, 0V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-220-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8 EUR |
| 50+ | 4.08 EUR |
| 100+ | 3.7 EUR |
| IXTY08N50D2 |
|
Hersteller: IXYS
MOSFETs N-CH MOSFETS 500V 800MA
MOSFETs N-CH MOSFETS 500V 800MA
auf Bestellung 21506 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.85 EUR |
| 10+ | 3.81 EUR |
| 70+ | 3.25 EUR |
| 560+ | 3.01 EUR |
| IXTY08N50D2 |
|
Hersteller: IXYS
Description: MOSFET N-CH 500V 800MA TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 4.6Ohm @ 400mA, 0V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V
Description: MOSFET N-CH 500V 800MA TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 4.6Ohm @ 400mA, 0V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V
auf Bestellung 2130 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8 EUR |
| 70+ | 3.88 EUR |
| 140+ | 3.53 EUR |
| 560+ | 3 EUR |
| 1050+ | 2.81 EUR |
| 2030+ | 2.64 EUR |
| IXTY08N50D2-TRL |
|
Hersteller: IXYS
MOSFET Modules DISCRETE SEMICONDUCTOR MODULES
MOSFET Modules DISCRETE SEMICONDUCTOR MODULES
auf Bestellung 2234 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.85 EUR |
| 10+ | 5.18 EUR |
| 100+ | 3.64 EUR |
| 500+ | 3.06 EUR |
| 2500+ | 3.01 EUR |
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