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Foto | Bezeichnung | Hersteller | Beschreibung |
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0500798000-10-N8-D | Molex |
Description: 10" PRE-CRIMP 1852 BROWN Packaging: Bulk Contact Finish: Tin Color: Brown Length: 10.0" (254.0mm) Wire Gauge: 28 AWG Contact End: Socket to Socket Contact Finish Thickness: 35.4µin (0.90µm) |
auf Bestellung 340 Stücke: Lieferzeit 10-14 Tag (e) |
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1210N822J500CT | Walsin |
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auf Bestellung 380 Stücke: Lieferzeit 10-14 Tag (e) |
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A10N8P | Hoffman Enclosures, Inc. |
![]() Packaging: Bulk Features: Mounting Hardware Color: White Size / Dimension: 8.250" L x 6.250" W (209.55mm x 158.75mm) For Use With/Related Products: Enclosures Material: Metal, Steel Type: Panel |
auf Bestellung 31 Stücke: Lieferzeit 10-14 Tag (e) |
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FDBL0210N80 | onsemi / Fairchild |
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auf Bestellung 3849 Stücke: Lieferzeit 10-14 Tag (e) |
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FDBL0210N80 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V Power Dissipation (Max): 357W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 40 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDBL0210N80 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V Power Dissipation (Max): 357W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 40 V |
auf Bestellung 3622 Stücke: Lieferzeit 10-14 Tag (e) |
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FQA10N80 | Fairchild Semiconductor |
![]() Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.8A (Tc) Rds On (Max) @ Id, Vgs: 1.05Ohm @ 4.9A, 10V Power Dissipation (Max): 240W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3P Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V |
auf Bestellung 9066 Stücke: Lieferzeit 10-14 Tag (e) |
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FQAF10N80 | Fairchild Semiconductor |
![]() Packaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc) Rds On (Max) @ Id, Vgs: 1.05Ohm @ 3.35A, 10V Power Dissipation (Max): 113W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-3PF Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V |
auf Bestellung 7549 Stücke: Lieferzeit 10-14 Tag (e) |
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FRW 10 N - 8 OHM | Visaton GmbH & Co. KG |
![]() Packaging: Bulk Size / Dimension: 4.016" L x 4.016" W (102.00mm x 102.00mm) Shape: Round, Square Frame Termination: Quick Connect Frequency - Self Resonant: 120Hz Port Location: Top Height - Seated (Max): 1.504" (38.20mm) Part Status: Active Impedance: 8 Ohms Power - Max: 20 W Power - Rated: 10 W Frequency Range: 80 Hz ~ 17 kHz Efficiency - dBA: 86.00 Efficiency - Testing: 1W/1M Efficiency - Type: Sound Pressure Level (SPL) |
auf Bestellung 53 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA10N80P | IXYS |
![]() Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Power dissipation: 300W Case: TO263 Mounting: SMD Kind of channel: enhancement Kind of package: tube Gate charge: 40nC |
auf Bestellung 270 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFA10N80P | IXYS |
![]() Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; Polar™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Power dissipation: 300W Case: TO263 Mounting: SMD Kind of channel: enhancement Kind of package: tube Gate charge: 40nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 270 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFA10N80P | IXYS |
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auf Bestellung 9595 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA10N80P | Littelfuse Inc. |
![]() Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Supplier Device Package: TO-263AA (IXFA) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V |
auf Bestellung 10400 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH10N80P | IXYS |
![]() Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 300W Case: TO247-3 Mounting: THT Kind of package: tube Gate charge: 40nC Technology: HiPerFET™; Polar™ Kind of channel: enhancement Drain-source voltage: 800V Drain current: 10A |
auf Bestellung 304 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH10N80P | IXYS |
![]() Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Power dissipation: 300W Case: TO247-3 Mounting: THT Kind of package: tube Gate charge: 40nC Technology: HiPerFET™; Polar™ Kind of channel: enhancement Drain-source voltage: 800V Drain current: 10A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 304 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFH10N80P | IXYS |
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auf Bestellung 584 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH10N80P | Littelfuse Inc. |
![]() Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Supplier Device Package: TO-247AD (IXFH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V |
auf Bestellung 72 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN110N85X | IXYS |
![]() Description: Module; single transistor; 850V; 110A; SOT227B; screw; Idm: 220A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 850V Drain current: 110A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 33mΩ Pulsed drain current: 220A Power dissipation: 1170W Technology: HiPerFET™; X-Class Gate-source voltage: ±40V Mechanical mounting: screw Reverse recovery time: 205ns Gate charge: 425nC Kind of channel: enhancement |
auf Bestellung 9 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFN110N85X | IXYS |
![]() Description: Module; single transistor; 850V; 110A; SOT227B; screw; Idm: 220A Type of module: MOSFET transistor Semiconductor structure: single transistor Drain-source voltage: 850V Drain current: 110A Case: SOT227B Electrical mounting: screw Polarisation: unipolar On-state resistance: 33mΩ Pulsed drain current: 220A Power dissipation: 1170W Technology: HiPerFET™; X-Class Gate-source voltage: ±40V Mechanical mounting: screw Reverse recovery time: 205ns Gate charge: 425nC Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 9 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFN110N85X | IXYS |
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auf Bestellung 258 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFN110N85X | Littelfuse Inc. |
![]() Packaging: Tube Package / Case: SOT-227-4, miniBLOC Mounting Type: Chassis Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 33mOhm @ 55A, 10V Power Dissipation (Max): 1170W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 8mA Supplier Device Package: SOT-227B Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 850 V Gate Charge (Qg) (Max) @ Vgs: 425 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 25 V |
auf Bestellung 80 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFP10N80P | IXYS |
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auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFP10N80P | Littelfuse Inc. |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V Power Dissipation (Max): 300W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 2.5mA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V |
auf Bestellung 240 Stücke: Lieferzeit 10-14 Tag (e) |
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SC 10 N - 8 OHM | Visaton GmbH & Co. KG |
![]() Packaging: Bulk Size / Dimension: 4.094" Dia (104.00mm) Shape: Round Type: General Purpose Technology: Magnetic Frequency - Self Resonant: 1.7kHz Port Location: Top Height - Seated (Max): 1.437" (36.50mm) Part Status: Active Impedance: 8 Ohms Frequency Range: 1 kHz ~ 20 kHz Efficiency - dBA: 90.00 Efficiency - Testing: 1W/1M Efficiency - Type: Sound Pressure Level (SPL) |
auf Bestellung 9 Stücke: Lieferzeit 10-14 Tag (e) |
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SSF10N80A | Fairchild Semiconductor |
![]() Packaging: Bulk Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc) Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V Power Dissipation (Max): 100W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-3PF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V |
auf Bestellung 1381 Stücke: Lieferzeit 10-14 Tag (e) |
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STD110N8F6 | STMicroelectronics |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9130 pF @ 40 V |
auf Bestellung 2374 Stücke: Lieferzeit 10-14 Tag (e) |
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STD110N8F6 | STMicroelectronics |
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auf Bestellung 12658 Stücke: Lieferzeit 10-14 Tag (e) |
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STF10N80K5 | STMicroelectronics |
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auf Bestellung 677 Stücke: Lieferzeit 10-14 Tag (e) |
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STF10N80K5 | STMicroelectronics |
![]() Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V Power Dissipation (Max): 30W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 635 pF @ 100 V |
auf Bestellung 795 Stücke: Lieferzeit 10-14 Tag (e) |
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STFU10N80K5 | STMicroelectronics |
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auf Bestellung 998 Stücke: Lieferzeit 108-112 Tag (e) |
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STH10N80K5-2AG | STMicroelectronics |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 680mOhm @ 4A, 10V Power Dissipation (Max): 121W (Tc) Vgs(th) (Max) @ Id: 5V @ 100µA Supplier Device Package: H2Pak-2 Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 800 V Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 426 pF @ 100 V Qualification: AEC-Q101 |
auf Bestellung 831 Stücke: Lieferzeit 10-14 Tag (e) |
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STH10N80K5-2AG | STMicroelectronics |
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auf Bestellung 804 Stücke: Lieferzeit 10-14 Tag (e) |
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STO-01T-110N-8 | JST Commercial |
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auf Bestellung 30000 Stücke: Lieferzeit 144-148 Tag (e) |
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STO-41T-110N-8 | JST Commercial |
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auf Bestellung 29245 Stücke: Lieferzeit 10-14 Tag (e) |
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STP10N80K5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 6A; Idm: 36A; 130W Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 800V Drain current: 6A Power dissipation: 130W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 22nC Pulsed drain current: 36A |
auf Bestellung 39 Stücke: Lieferzeit 14-21 Tag (e) |
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STP10N80K5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 6A; Idm: 36A; 130W Type of transistor: N-MOSFET Technology: MDmesh™ K5 Polarisation: unipolar Drain-source voltage: 800V Drain current: 6A Power dissipation: 130W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.6Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 22nC Pulsed drain current: 36A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 39 Stücke: Lieferzeit 7-14 Tag (e) |
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STP110N8F6 | STMicroelectronics |
![]() Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 55A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9130 pF @ 40 V |
auf Bestellung 687 Stücke: Lieferzeit 10-14 Tag (e) |
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TN2510N8-G | MICROCHIP TECHNOLOGY |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 3A; 1.6W; SOT89-3 Mounting: SMD Case: SOT89-3 Drain-source voltage: 100V On-state resistance: 1.5Ω Type of transistor: N-MOSFET Power dissipation: 1.6W Polarisation: unipolar Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 3A |
auf Bestellung 157 Stücke: Lieferzeit 14-21 Tag (e) |
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TN2510N8-G | MICROCHIP TECHNOLOGY |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 3A; 1.6W; SOT89-3 Mounting: SMD Case: SOT89-3 Drain-source voltage: 100V On-state resistance: 1.5Ω Type of transistor: N-MOSFET Power dissipation: 1.6W Polarisation: unipolar Kind of channel: enhancement Gate-source voltage: ±20V Pulsed drain current: 3A Anzahl je Verpackung: 1 Stücke |
auf Bestellung 157 Stücke: Lieferzeit 7-14 Tag (e) |
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TN2510N8-G | Microchip |
![]() Anzahl je Verpackung: 5 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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TN2510N8-G | Microchip Technology |
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auf Bestellung 7028 Stücke: Lieferzeit 10-14 Tag (e) |
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TN2510N8-G | Microchip Technology |
![]() Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 730mA (Tj) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 750mA, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-243AA (SOT-89) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V |
auf Bestellung 2384 Stücke: Lieferzeit 10-14 Tag (e) |
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TN2510N8-G | Microchip Technology |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 730mA (Tj) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 750mA, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-243AA (SOT-89) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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TP2510N8-G | MICROCHIP TECHNOLOGY |
![]() Description: Transistor: P-MOSFET; unipolar; -100V; -1.5A; 1.6W; SOT89-3 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Pulsed drain current: -1.5A Power dissipation: 1.6W Case: SOT89-3 Gate-source voltage: ±20V On-state resistance: 3.5Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 875 Stücke: Lieferzeit 14-21 Tag (e) |
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TP2510N8-G | Microchip |
![]() Anzahl je Verpackung: 10 Stücke |
auf Bestellung 2 Stücke: Lieferzeit 7-14 Tag (e) |
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TP2510N8-G | Microchip Technology |
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auf Bestellung 3760 Stücke: Lieferzeit 10-14 Tag (e) |
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TP2510N8-G | Microchip Technology |
![]() Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 480mA (Tj) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 750mA, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: TO-243AA (SOT-89) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V |
auf Bestellung 11614 Stücke: Lieferzeit 10-14 Tag (e) |
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TP2510N8-G | Microchip Technology |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 480mA (Tj) Rds On (Max) @ Id, Vgs: 3.5Ohm @ 750mA, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: TO-243AA (SOT-89) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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WMJ10N80D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 10A; Idm: 40A; 215W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Power dissipation: 215W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 910mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 33nC Pulsed drain current: 40A |
auf Bestellung 48 Stücke: Lieferzeit 14-21 Tag (e) |
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WMK10N80M3 | WAYON |
![]() Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO220-3 Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Power dissipation: 85W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 1.03Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Heatsink thickness: 1.2...1.45mm |
auf Bestellung 335 Stücke: Lieferzeit 14-21 Tag (e) |
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WML10N80D1B | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 40A; 62.5W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Power dissipation: 62.5W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 910mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 33nC Pulsed drain current: 40A |
auf Bestellung 963 Stücke: Lieferzeit 14-21 Tag (e) |
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WML10N80M3 | WAYON |
![]() Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 31W; TO220FP Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Power dissipation: 31W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.03Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 132 Stücke: Lieferzeit 14-21 Tag (e) |
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WMO10N80M3 | WAYON |
![]() Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO252 Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Power dissipation: 85W Case: TO252 Gate-source voltage: ±30V On-state resistance: 1.03Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2198 Stücke: Lieferzeit 14-21 Tag (e) |
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FQA10N80 | Fairchild |
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auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
FQA10N80C | FAIRCHILD |
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auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
FQA10N80C-F109 | ON Semiconductor |
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auf Bestellung 11250 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
FUS10N878A | 04+ |
auf Bestellung 1 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
KSV3110N-8 |
auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
MTP10N80 |
auf Bestellung 3355 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
SSF10N80A |
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auf Bestellung 5800 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
0500798000-10-N8-D |
Hersteller: Molex
Description: 10" PRE-CRIMP 1852 BROWN
Packaging: Bulk
Contact Finish: Tin
Color: Brown
Length: 10.0" (254.0mm)
Wire Gauge: 28 AWG
Contact End: Socket to Socket
Contact Finish Thickness: 35.4µin (0.90µm)
Description: 10" PRE-CRIMP 1852 BROWN
Packaging: Bulk
Contact Finish: Tin
Color: Brown
Length: 10.0" (254.0mm)
Wire Gauge: 28 AWG
Contact End: Socket to Socket
Contact Finish Thickness: 35.4µin (0.90µm)
auf Bestellung 340 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
15+ | 1.20 EUR |
30+ | 1.09 EUR |
50+ | 1.04 EUR |
100+ | 0.98 EUR |
250+ | 0.90 EUR |
1210N822J500CT |
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Hersteller: Walsin
Multilayer Ceramic Capacitors MLCC - SMD/SMT 8200pF +-5% 50V
Multilayer Ceramic Capacitors MLCC - SMD/SMT 8200pF +-5% 50V
auf Bestellung 380 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 0.72 EUR |
10+ | 0.49 EUR |
100+ | 0.29 EUR |
1000+ | 0.20 EUR |
3000+ | 0.18 EUR |
9000+ | 0.16 EUR |
24000+ | 0.15 EUR |
A10N8P |
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Hersteller: Hoffman Enclosures, Inc.
Description: PANEL N1 8.25X6.25
Packaging: Bulk
Features: Mounting Hardware
Color: White
Size / Dimension: 8.250" L x 6.250" W (209.55mm x 158.75mm)
For Use With/Related Products: Enclosures
Material: Metal, Steel
Type: Panel
Description: PANEL N1 8.25X6.25
Packaging: Bulk
Features: Mounting Hardware
Color: White
Size / Dimension: 8.250" L x 6.250" W (209.55mm x 158.75mm)
For Use With/Related Products: Enclosures
Material: Metal, Steel
Type: Panel
auf Bestellung 31 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 29.94 EUR |
5+ | 25.59 EUR |
10+ | 23.92 EUR |
25+ | 21.88 EUR |
FDBL0210N80 |
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Hersteller: onsemi / Fairchild
MOSFETs Code D IMR
MOSFETs Code D IMR
auf Bestellung 3849 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 8.31 EUR |
10+ | 6.55 EUR |
25+ | 6.53 EUR |
100+ | 4.93 EUR |
500+ | 4.75 EUR |
FDBL0210N80 |
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Hersteller: onsemi
Description: MOSFET N-CH 80V 240A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 40 V
Description: MOSFET N-CH 80V 240A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 40 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2000+ | 4.62 EUR |
FDBL0210N80 |
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Hersteller: onsemi
Description: MOSFET N-CH 80V 240A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 40 V
Description: MOSFET N-CH 80V 240A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 40 V
auf Bestellung 3622 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 11.04 EUR |
10+ | 7.44 EUR |
100+ | 5.40 EUR |
500+ | 4.62 EUR |
FQA10N80 |
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Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 800V 9.8A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 4.9A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Description: MOSFET N-CH 800V 9.8A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 4.9A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
auf Bestellung 9066 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
193+ | 2.63 EUR |
FQAF10N80 |
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Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 800V 6.7A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 3.35A, 10V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
Description: MOSFET N-CH 800V 6.7A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 3.35A, 10V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
auf Bestellung 7549 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
166+ | 3.06 EUR |
FRW 10 N - 8 OHM |
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Hersteller: Visaton GmbH & Co. KG
Description: SPEAKER 8OHM 10W TOP PORT 86DB
Packaging: Bulk
Size / Dimension: 4.016" L x 4.016" W (102.00mm x 102.00mm)
Shape: Round, Square Frame
Termination: Quick Connect
Frequency - Self Resonant: 120Hz
Port Location: Top
Height - Seated (Max): 1.504" (38.20mm)
Part Status: Active
Impedance: 8 Ohms
Power - Max: 20 W
Power - Rated: 10 W
Frequency Range: 80 Hz ~ 17 kHz
Efficiency - dBA: 86.00
Efficiency - Testing: 1W/1M
Efficiency - Type: Sound Pressure Level (SPL)
Description: SPEAKER 8OHM 10W TOP PORT 86DB
Packaging: Bulk
Size / Dimension: 4.016" L x 4.016" W (102.00mm x 102.00mm)
Shape: Round, Square Frame
Termination: Quick Connect
Frequency - Self Resonant: 120Hz
Port Location: Top
Height - Seated (Max): 1.504" (38.20mm)
Part Status: Active
Impedance: 8 Ohms
Power - Max: 20 W
Power - Rated: 10 W
Frequency Range: 80 Hz ~ 17 kHz
Efficiency - dBA: 86.00
Efficiency - Testing: 1W/1M
Efficiency - Type: Sound Pressure Level (SPL)
auf Bestellung 53 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 21.14 EUR |
10+ | 17.22 EUR |
25+ | 15.88 EUR |
IXFA10N80P |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 300W
Case: TO263
Mounting: SMD
Kind of channel: enhancement
Kind of package: tube
Gate charge: 40nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 300W
Case: TO263
Mounting: SMD
Kind of channel: enhancement
Kind of package: tube
Gate charge: 40nC
auf Bestellung 270 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
15+ | 5.08 EUR |
16+ | 4.56 EUR |
20+ | 3.65 EUR |
21+ | 3.45 EUR |
IXFA10N80P |
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Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 300W
Case: TO263
Mounting: SMD
Kind of channel: enhancement
Kind of package: tube
Gate charge: 40nC
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 300W
Case: TO263
Mounting: SMD
Kind of channel: enhancement
Kind of package: tube
Gate charge: 40nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 270 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
15+ | 5.08 EUR |
16+ | 4.56 EUR |
20+ | 3.65 EUR |
21+ | 3.45 EUR |
IXFA10N80P |
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Hersteller: IXYS
MOSFETs 10 Amps 800V 1.1 Rds
MOSFETs 10 Amps 800V 1.1 Rds
auf Bestellung 9595 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 7.85 EUR |
10+ | 6.53 EUR |
50+ | 4.40 EUR |
100+ | 4.05 EUR |
500+ | 3.84 EUR |
IXFA10N80P |
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Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 800V 10A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
Description: MOSFET N-CH 800V 10A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
auf Bestellung 10400 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 7.92 EUR |
50+ | 4.45 EUR |
100+ | 4.10 EUR |
500+ | 3.55 EUR |
IXFH10N80P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 40nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Drain-source voltage: 800V
Drain current: 10A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 40nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Drain-source voltage: 800V
Drain current: 10A
auf Bestellung 304 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.81 EUR |
16+ | 4.68 EUR |
17+ | 4.43 EUR |
IXFH10N80P |
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Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 40nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Drain-source voltage: 800V
Drain current: 10A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 40nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Drain-source voltage: 800V
Drain current: 10A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 304 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.81 EUR |
16+ | 4.68 EUR |
17+ | 4.43 EUR |
510+ | 4.26 EUR |
IXFH10N80P |
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Hersteller: IXYS
MOSFETs 10 Amps 800V 1.1 Rds
MOSFETs 10 Amps 800V 1.1 Rds
auf Bestellung 584 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 8.76 EUR |
10+ | 8.06 EUR |
30+ | 5.79 EUR |
120+ | 5.23 EUR |
270+ | 5.19 EUR |
510+ | 5.17 EUR |
1020+ | 4.95 EUR |
IXFH10N80P |
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Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 800V 10A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
Description: MOSFET N-CH 800V 10A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
auf Bestellung 72 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 9.63 EUR |
30+ | 5.83 EUR |
IXFN110N85X |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 850V; 110A; SOT227B; screw; Idm: 220A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 850V
Drain current: 110A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 33mΩ
Pulsed drain current: 220A
Power dissipation: 1170W
Technology: HiPerFET™; X-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 205ns
Gate charge: 425nC
Kind of channel: enhancement
Category: Transistor modules MOSFET
Description: Module; single transistor; 850V; 110A; SOT227B; screw; Idm: 220A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 850V
Drain current: 110A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 33mΩ
Pulsed drain current: 220A
Power dissipation: 1170W
Technology: HiPerFET™; X-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 205ns
Gate charge: 425nC
Kind of channel: enhancement
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
1+ | 92.21 EUR |
IXFN110N85X |
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Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 850V; 110A; SOT227B; screw; Idm: 220A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 850V
Drain current: 110A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 33mΩ
Pulsed drain current: 220A
Power dissipation: 1170W
Technology: HiPerFET™; X-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 205ns
Gate charge: 425nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: Transistor modules MOSFET
Description: Module; single transistor; 850V; 110A; SOT227B; screw; Idm: 220A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 850V
Drain current: 110A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 33mΩ
Pulsed drain current: 220A
Power dissipation: 1170W
Technology: HiPerFET™; X-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 205ns
Gate charge: 425nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 92.21 EUR |
IXFN110N85X |
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Hersteller: IXYS
MOSFET Modules 850V X-Class HiPerFE Power MOSFET
MOSFET Modules 850V X-Class HiPerFE Power MOSFET
auf Bestellung 258 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 123.50 EUR |
10+ | 112.55 EUR |
20+ | 112.53 EUR |
50+ | 112.48 EUR |
100+ | 102.94 EUR |
IXFN110N85X |
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Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 850V 110A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 55A, 10V
Power Dissipation (Max): 1170W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 425 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 25 V
Description: MOSFET N-CH 850V 110A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 55A, 10V
Power Dissipation (Max): 1170W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 425 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 25 V
auf Bestellung 80 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 122.46 EUR |
10+ | 111.16 EUR |
IXFP10N80P |
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Hersteller: IXYS
MOSFETs 10 Amps 800V 1.1 Rds
MOSFETs 10 Amps 800V 1.1 Rds
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 8.80 EUR |
50+ | 4.98 EUR |
IXFP10N80P |
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Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 800V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
Description: MOSFET N-CH 800V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 8.87 EUR |
50+ | 5.02 EUR |
100+ | 4.63 EUR |
SC 10 N - 8 OHM |
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Hersteller: Visaton GmbH & Co. KG
Description: SPEAKER 8OHM TOP PORT 90DB
Packaging: Bulk
Size / Dimension: 4.094" Dia (104.00mm)
Shape: Round
Type: General Purpose
Technology: Magnetic
Frequency - Self Resonant: 1.7kHz
Port Location: Top
Height - Seated (Max): 1.437" (36.50mm)
Part Status: Active
Impedance: 8 Ohms
Frequency Range: 1 kHz ~ 20 kHz
Efficiency - dBA: 90.00
Efficiency - Testing: 1W/1M
Efficiency - Type: Sound Pressure Level (SPL)
Description: SPEAKER 8OHM TOP PORT 90DB
Packaging: Bulk
Size / Dimension: 4.094" Dia (104.00mm)
Shape: Round
Type: General Purpose
Technology: Magnetic
Frequency - Self Resonant: 1.7kHz
Port Location: Top
Height - Seated (Max): 1.437" (36.50mm)
Part Status: Active
Impedance: 8 Ohms
Frequency Range: 1 kHz ~ 20 kHz
Efficiency - dBA: 90.00
Efficiency - Testing: 1W/1M
Efficiency - Type: Sound Pressure Level (SPL)
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 39.30 EUR |
SSF10N80A |
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Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
auf Bestellung 1381 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
123+ | 4.14 EUR |
STD110N8F6 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 80V 80A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9130 pF @ 40 V
Description: MOSFET N-CH 80V 80A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9130 pF @ 40 V
auf Bestellung 2374 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
6+ | 3.08 EUR |
10+ | 2.15 EUR |
100+ | 1.62 EUR |
500+ | 1.43 EUR |
1000+ | 1.34 EUR |
STD110N8F6 |
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Hersteller: STMicroelectronics
MOSFETs N-channel 80 V, 0.0056 Ohm typ 110 A, STripFET F6 Power MOSFET
MOSFETs N-channel 80 V, 0.0056 Ohm typ 110 A, STripFET F6 Power MOSFET
auf Bestellung 12658 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 2.66 EUR |
10+ | 1.92 EUR |
100+ | 1.51 EUR |
250+ | 1.50 EUR |
500+ | 1.33 EUR |
1000+ | 1.27 EUR |
2500+ | 1.21 EUR |
STF10N80K5 |
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Hersteller: STMicroelectronics
MOSFETs N-channel 800 V, 0.470 Ohm typ 9 A MDmesh K5 Power MOSFET
MOSFETs N-channel 800 V, 0.470 Ohm typ 9 A MDmesh K5 Power MOSFET
auf Bestellung 677 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 4.19 EUR |
25+ | 2.75 EUR |
100+ | 2.57 EUR |
250+ | 2.55 EUR |
500+ | 2.32 EUR |
1000+ | 2.25 EUR |
STF10N80K5 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 9A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 635 pF @ 100 V
Description: MOSFET N-CH 800V 9A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 635 pF @ 100 V
auf Bestellung 795 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3+ | 6.65 EUR |
50+ | 3.38 EUR |
100+ | 3.07 EUR |
500+ | 2.51 EUR |
STFU10N80K5 |
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Hersteller: STMicroelectronics
MOSFETs N-channel 800 V, 0.470 Ohm typ 9 A MDmesh K5 Power MOSFET
MOSFETs N-channel 800 V, 0.470 Ohm typ 9 A MDmesh K5 Power MOSFET
auf Bestellung 998 Stücke:
Lieferzeit 108-112 Tag (e)Anzahl | Preis |
---|---|
1+ | 5.28 EUR |
10+ | 3.57 EUR |
25+ | 3.40 EUR |
100+ | 2.96 EUR |
250+ | 2.82 EUR |
500+ | 2.68 EUR |
1000+ | 2.24 EUR |
STH10N80K5-2AG |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 8A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 680mOhm @ 4A, 10V
Power Dissipation (Max): 121W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: H2Pak-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 426 pF @ 100 V
Qualification: AEC-Q101
Description: MOSFET N-CH 800V 8A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 680mOhm @ 4A, 10V
Power Dissipation (Max): 121W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: H2Pak-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 426 pF @ 100 V
Qualification: AEC-Q101
auf Bestellung 831 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 8.92 EUR |
10+ | 5.95 EUR |
100+ | 4.26 EUR |
500+ | 3.53 EUR |
STH10N80K5-2AG |
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Hersteller: STMicroelectronics
MOSFETs Automotive-grade N-channel 800V, 0.60 Ohm 8A MDmesh K5 Power MOSFET
MOSFETs Automotive-grade N-channel 800V, 0.60 Ohm 8A MDmesh K5 Power MOSFET
auf Bestellung 804 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 8.69 EUR |
10+ | 5.86 EUR |
100+ | 4.21 EUR |
500+ | 3.52 EUR |
1000+ | 3.45 EUR |
STO-01T-110N-8 |
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Hersteller: JST Commercial
Terminals TAB-ON TERMINAL STO-110 SERIES
Terminals TAB-ON TERMINAL STO-110 SERIES
auf Bestellung 30000 Stücke:
Lieferzeit 144-148 Tag (e)Anzahl | Preis |
---|---|
17+ | 0.17 EUR |
37+ | 0.08 EUR |
100+ | 0.06 EUR |
500+ | 0.05 EUR |
1000+ | 0.04 EUR |
2500+ | 0.04 EUR |
5000+ | 0.04 EUR |
STO-41T-110N-8 |
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Hersteller: JST Commercial
Automotive Connectors TAB-ON CHAIN TERMINAL
Automotive Connectors TAB-ON CHAIN TERMINAL
auf Bestellung 29245 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
17+ | 0.17 EUR |
34+ | 0.08 EUR |
100+ | 0.06 EUR |
500+ | 0.05 EUR |
1000+ | 0.05 EUR |
2500+ | 0.04 EUR |
5000+ | 0.04 EUR |
STP10N80K5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 6A; Idm: 36A; 130W
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 22nC
Pulsed drain current: 36A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 6A; Idm: 36A; 130W
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 22nC
Pulsed drain current: 36A
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
17+ | 4.30 EUR |
19+ | 3.88 EUR |
25+ | 2.97 EUR |
26+ | 2.82 EUR |
STP10N80K5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 6A; Idm: 36A; 130W
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 22nC
Pulsed drain current: 36A
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 6A; Idm: 36A; 130W
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 22nC
Pulsed drain current: 36A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 39 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
17+ | 4.30 EUR |
19+ | 3.88 EUR |
25+ | 2.97 EUR |
26+ | 2.82 EUR |
STP110N8F6 |
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Hersteller: STMicroelectronics
Description: MOSFET N-CH 80V 110A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 55A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9130 pF @ 40 V
Description: MOSFET N-CH 80V 110A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 55A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9130 pF @ 40 V
auf Bestellung 687 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 3.84 EUR |
50+ | 1.86 EUR |
100+ | 1.67 EUR |
500+ | 1.34 EUR |
TN2510N8-G |
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Hersteller: MICROCHIP TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3A; 1.6W; SOT89-3
Mounting: SMD
Case: SOT89-3
Drain-source voltage: 100V
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 3A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3A; 1.6W; SOT89-3
Mounting: SMD
Case: SOT89-3
Drain-source voltage: 100V
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 3A
auf Bestellung 157 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
38+ | 1.89 EUR |
40+ | 1.83 EUR |
48+ | 1.50 EUR |
51+ | 1.42 EUR |
TN2510N8-G |
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Hersteller: MICROCHIP TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3A; 1.6W; SOT89-3
Mounting: SMD
Case: SOT89-3
Drain-source voltage: 100V
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 3A
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3A; 1.6W; SOT89-3
Mounting: SMD
Case: SOT89-3
Drain-source voltage: 100V
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 3A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 157 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
38+ | 1.89 EUR |
40+ | 1.83 EUR |
48+ | 1.50 EUR |
51+ | 1.42 EUR |
TN2510N8-G |
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Hersteller: Microchip
Transistor N-Channel MOSFET; 100V; 20V; 15Ohm; 730mA; 1,6W; -55°C ~ 150°C; TN2510N8-G TTN2510n8
Anzahl je Verpackung: 5 Stücke
Transistor N-Channel MOSFET; 100V; 20V; 15Ohm; 730mA; 1,6W; -55°C ~ 150°C; TN2510N8-G TTN2510n8
Anzahl je Verpackung: 5 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
10+ | 5.04 EUR |
TN2510N8-G |
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Hersteller: Microchip Technology
MOSFETs 100V 1.5Ohm
MOSFETs 100V 1.5Ohm
auf Bestellung 7028 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 2.25 EUR |
25+ | 1.88 EUR |
100+ | 1.71 EUR |
TN2510N8-G |
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Hersteller: Microchip Technology
Description: MOSFET N-CH 100V 730MA TO243AA
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 730mA (Tj)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
Description: MOSFET N-CH 100V 730MA TO243AA
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 730mA (Tj)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
auf Bestellung 2384 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
8+ | 2.27 EUR |
25+ | 1.90 EUR |
100+ | 1.72 EUR |
TN2510N8-G |
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Hersteller: Microchip Technology
Description: MOSFET N-CH 100V 730MA TO243AA
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 730mA (Tj)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
Description: MOSFET N-CH 100V 730MA TO243AA
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 730mA (Tj)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2000+ | 1.72 EUR |
TP2510N8-G |
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Hersteller: MICROCHIP TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -1.5A; 1.6W; SOT89-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Pulsed drain current: -1.5A
Power dissipation: 1.6W
Case: SOT89-3
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -1.5A; 1.6W; SOT89-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Pulsed drain current: -1.5A
Power dissipation: 1.6W
Case: SOT89-3
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 875 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
41+ | 1.77 EUR |
46+ | 1.59 EUR |
57+ | 1.26 EUR |
59+ | 1.22 EUR |
63+ | 1.14 EUR |
100+ | 1.10 EUR |
TP2510N8-G |
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Hersteller: Microchip
P-MOSFET 100V 480mA 3.5mΩ 1.6W TP2510N8-G Microchip Tech TTP2510n8
Anzahl je Verpackung: 10 Stücke
P-MOSFET 100V 480mA 3.5mΩ 1.6W TP2510N8-G Microchip Tech TTP2510n8
Anzahl je Verpackung: 10 Stücke
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis |
---|---|
10+ | 3.19 EUR |
TP2510N8-G |
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Hersteller: Microchip Technology
MOSFETs 100V 3.5Ohm
MOSFETs 100V 3.5Ohm
auf Bestellung 3760 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 2.57 EUR |
25+ | 2.15 EUR |
100+ | 1.92 EUR |
TP2510N8-G |
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Hersteller: Microchip Technology
Description: MOSFET P-CH 100V 480MA TO243AA
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 480mA (Tj)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
Description: MOSFET P-CH 100V 480MA TO243AA
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 480mA (Tj)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
auf Bestellung 11614 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
7+ | 2.59 EUR |
25+ | 2.16 EUR |
100+ | 1.94 EUR |
TP2510N8-G |
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Hersteller: Microchip Technology
Description: MOSFET P-CH 100V 480MA TO243AA
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 480mA (Tj)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
Description: MOSFET P-CH 100V 480MA TO243AA
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 480mA (Tj)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2000+ | 1.94 EUR |
WMJ10N80D1 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 10A; Idm: 40A; 215W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 215W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 910mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 33nC
Pulsed drain current: 40A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 10A; Idm: 40A; 215W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 215W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 910mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 33nC
Pulsed drain current: 40A
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
33+ | 2.19 EUR |
41+ | 1.76 EUR |
48+ | 1.49 EUR |
WMK10N80M3 |
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Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.03Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.03Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
auf Bestellung 335 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
28+ | 2.56 EUR |
34+ | 2.14 EUR |
42+ | 1.72 EUR |
74+ | 0.97 EUR |
79+ | 0.92 EUR |
WML10N80D1B |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 40A; 62.5W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 62.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 910mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 33nC
Pulsed drain current: 40A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 40A; 62.5W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 62.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 910mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 33nC
Pulsed drain current: 40A
auf Bestellung 963 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
71+ | 1.02 EUR |
86+ | 0.84 EUR |
108+ | 0.66 EUR |
115+ | 0.63 EUR |
500+ | 0.62 EUR |
WML10N80M3 |
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Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.03Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.03Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 132 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
56+ | 1.29 EUR |
61+ | 1.19 EUR |
80+ | 0.90 EUR |
84+ | 0.86 EUR |
WMO10N80M3 |
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Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.03Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.03Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2198 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
70+ | 1.03 EUR |
88+ | 0.82 EUR |
101+ | 0.71 EUR |
107+ | 0.67 EUR |
112+ | 0.64 EUR |
500+ | 0.61 EUR |
FQA10N80 |
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Hersteller: Fairchild
auf Bestellung 2100 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
FQA10N80C |
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Hersteller: FAIRCHILD
2005 TO-3P
2005 TO-3P
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
FQA10N80C-F109 |
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Hersteller: ON Semiconductor
auf Bestellung 11250 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
FUS10N878A |
04+
auf Bestellung 1 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
KSV3110N-8 |
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
SSF10N80A |
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auf Bestellung 5800 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH
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