Suchergebnisse für "10n8" : > 60

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0500798000-10-N8-D 0500798000-10-N8-D Molex Description: 10" PRE-CRIMP 1852 BROWN
Packaging: Bulk
Contact Finish: Tin
Color: Brown
Length: 10.0" (254.0mm)
Wire Gauge: 28 AWG
Contact End: Socket to Socket
Contact Finish Thickness: 35.4µin (0.90µm)
auf Bestellung 340 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.20 EUR
30+1.09 EUR
50+1.04 EUR
100+0.98 EUR
250+0.90 EUR
Mindestbestellmenge: 15
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1210N822J500CT 1210N822J500CT Walsin WTC_MLCC_General_Purpose-1534899.pdf Multilayer Ceramic Capacitors MLCC - SMD/SMT 8200pF +-5% 50V
auf Bestellung 380 Stücke:
Lieferzeit 10-14 Tag (e)
4+0.72 EUR
10+0.49 EUR
100+0.29 EUR
1000+0.20 EUR
3000+0.18 EUR
9000+0.16 EUR
24000+0.15 EUR
Mindestbestellmenge: 4
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A10N8P A10N8P Hoffman Enclosures, Inc. Spec-00310.pdf Description: PANEL N1 8.25X6.25
Packaging: Bulk
Features: Mounting Hardware
Color: White
Size / Dimension: 8.250" L x 6.250" W (209.55mm x 158.75mm)
For Use With/Related Products: Enclosures
Material: Metal, Steel
Type: Panel
auf Bestellung 31 Stücke:
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1+29.94 EUR
5+25.59 EUR
10+23.92 EUR
25+21.88 EUR
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FDBL0210N80 FDBL0210N80 onsemi / Fairchild fdbl0210n80-d.pdf MOSFETs Code D IMR
auf Bestellung 3849 Stücke:
Lieferzeit 10-14 Tag (e)
1+8.31 EUR
10+6.55 EUR
25+6.53 EUR
100+4.93 EUR
500+4.75 EUR
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FDBL0210N80 FDBL0210N80 onsemi fdbl0210n80-d.pdf Description: MOSFET N-CH 80V 240A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 40 V
auf Bestellung 2000 Stücke:
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2000+4.62 EUR
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FDBL0210N80 FDBL0210N80 onsemi fdbl0210n80-d.pdf Description: MOSFET N-CH 80V 240A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 40 V
auf Bestellung 3622 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.04 EUR
10+7.44 EUR
100+5.40 EUR
500+4.62 EUR
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FQA10N80 FQA10N80 Fairchild Semiconductor FAIRS24245-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 800V 9.8A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 4.9A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
auf Bestellung 9066 Stücke:
Lieferzeit 10-14 Tag (e)
193+2.63 EUR
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FQAF10N80 FQAF10N80 Fairchild Semiconductor FAIRS17098-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 800V 6.7A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 3.35A, 10V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
auf Bestellung 7549 Stücke:
Lieferzeit 10-14 Tag (e)
166+3.06 EUR
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FRW 10 N - 8 OHM FRW 10 N - 8 OHM Visaton GmbH & Co. KG FRW%2010%20N_2032.pdf Description: SPEAKER 8OHM 10W TOP PORT 86DB
Packaging: Bulk
Size / Dimension: 4.016" L x 4.016" W (102.00mm x 102.00mm)
Shape: Round, Square Frame
Termination: Quick Connect
Frequency - Self Resonant: 120Hz
Port Location: Top
Height - Seated (Max): 1.504" (38.20mm)
Part Status: Active
Impedance: 8 Ohms
Power - Max: 20 W
Power - Rated: 10 W
Frequency Range: 80 Hz ~ 17 kHz
Efficiency - dBA: 86.00
Efficiency - Testing: 1W/1M
Efficiency - Type: Sound Pressure Level (SPL)
auf Bestellung 53 Stücke:
Lieferzeit 10-14 Tag (e)
1+21.14 EUR
10+17.22 EUR
25+15.88 EUR
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IXFA10N80P IXFA10N80P IXYS IXFA(H,P,Q)10N80P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 300W
Case: TO263
Mounting: SMD
Kind of channel: enhancement
Kind of package: tube
Gate charge: 40nC
auf Bestellung 270 Stücke:
Lieferzeit 14-21 Tag (e)
15+5.08 EUR
16+4.56 EUR
20+3.65 EUR
21+3.45 EUR
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IXFA10N80P IXFA10N80P IXYS IXFA(H,P,Q)10N80P.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 300W
Case: TO263
Mounting: SMD
Kind of channel: enhancement
Kind of package: tube
Gate charge: 40nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 270 Stücke:
Lieferzeit 7-14 Tag (e)
15+5.08 EUR
16+4.56 EUR
20+3.65 EUR
21+3.45 EUR
Mindestbestellmenge: 15
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IXFA10N80P IXFA10N80P IXYS media-3322078.pdf MOSFETs 10 Amps 800V 1.1 Rds
auf Bestellung 9595 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.85 EUR
10+6.53 EUR
50+4.40 EUR
100+4.05 EUR
500+3.84 EUR
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IXFA10N80P IXFA10N80P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_10n80p_datasheet.pdf.pdf Description: MOSFET N-CH 800V 10A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
auf Bestellung 10400 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.92 EUR
50+4.45 EUR
100+4.10 EUR
500+3.55 EUR
Mindestbestellmenge: 3
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IXFH10N80P IXFH10N80P IXYS IXFA(H,P,Q)10N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 40nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Drain-source voltage: 800V
Drain current: 10A
auf Bestellung 304 Stücke:
Lieferzeit 14-21 Tag (e)
11+6.81 EUR
16+4.68 EUR
17+4.43 EUR
Mindestbestellmenge: 11
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IXFH10N80P IXFH10N80P IXYS IXFA(H,P,Q)10N80P.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 40nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Drain-source voltage: 800V
Drain current: 10A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 304 Stücke:
Lieferzeit 7-14 Tag (e)
11+6.81 EUR
16+4.68 EUR
17+4.43 EUR
510+4.26 EUR
Mindestbestellmenge: 11
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IXFH10N80P IXFH10N80P IXYS media-3322078.pdf MOSFETs 10 Amps 800V 1.1 Rds
auf Bestellung 584 Stücke:
Lieferzeit 10-14 Tag (e)
1+8.76 EUR
10+8.06 EUR
30+5.79 EUR
120+5.23 EUR
270+5.19 EUR
510+5.17 EUR
1020+4.95 EUR
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IXFH10N80P IXFH10N80P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_10n80p_datasheet.pdf.pdf Description: MOSFET N-CH 800V 10A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
auf Bestellung 72 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.63 EUR
30+5.83 EUR
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IXFN110N85X IXFN110N85X IXYS IXFN110N85X.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 850V; 110A; SOT227B; screw; Idm: 220A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 850V
Drain current: 110A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 33mΩ
Pulsed drain current: 220A
Power dissipation: 1170W
Technology: HiPerFET™; X-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 205ns
Gate charge: 425nC
Kind of channel: enhancement
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
1+92.21 EUR
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IXFN110N85X IXFN110N85X IXYS IXFN110N85X.pdf Category: Transistor modules MOSFET
Description: Module; single transistor; 850V; 110A; SOT227B; screw; Idm: 220A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 850V
Drain current: 110A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 33mΩ
Pulsed drain current: 220A
Power dissipation: 1170W
Technology: HiPerFET™; X-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 205ns
Gate charge: 425nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)
1+92.21 EUR
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IXFN110N85X IXFN110N85X IXYS media-3322450.pdf MOSFET Modules 850V X-Class HiPerFE Power MOSFET
auf Bestellung 258 Stücke:
Lieferzeit 10-14 Tag (e)
1+123.50 EUR
10+112.55 EUR
20+112.53 EUR
50+112.48 EUR
100+102.94 EUR
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IXFN110N85X IXFN110N85X Littelfuse Inc. IXFN110N85X%20data%20sheet.pdf Description: MOSFET N-CH 850V 110A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 55A, 10V
Power Dissipation (Max): 1170W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 425 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 25 V
auf Bestellung 80 Stücke:
Lieferzeit 10-14 Tag (e)
1+122.46 EUR
10+111.16 EUR
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IXFP10N80P IXFP10N80P IXYS media-3322078.pdf MOSFETs 10 Amps 800V 1.1 Rds
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
1+8.80 EUR
50+4.98 EUR
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IXFP10N80P IXFP10N80P Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_10n80p_datasheet.pdf.pdf Description: MOSFET N-CH 800V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
2+8.87 EUR
50+5.02 EUR
100+4.63 EUR
Mindestbestellmenge: 2
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SC 10 N - 8 OHM SC 10 N - 8 OHM Visaton GmbH & Co. KG SC%2010%20N.pdf Description: SPEAKER 8OHM TOP PORT 90DB
Packaging: Bulk
Size / Dimension: 4.094" Dia (104.00mm)
Shape: Round
Type: General Purpose
Technology: Magnetic
Frequency - Self Resonant: 1.7kHz
Port Location: Top
Height - Seated (Max): 1.437" (36.50mm)
Part Status: Active
Impedance: 8 Ohms
Frequency Range: 1 kHz ~ 20 kHz
Efficiency - dBA: 90.00
Efficiency - Testing: 1W/1M
Efficiency - Type: Sound Pressure Level (SPL)
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
1+39.30 EUR
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SSF10N80A Fairchild Semiconductor FAIRS06924-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
auf Bestellung 1381 Stücke:
Lieferzeit 10-14 Tag (e)
123+4.14 EUR
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STD110N8F6 STD110N8F6 STMicroelectronics en.DM00151073.pdf Description: MOSFET N-CH 80V 80A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9130 pF @ 40 V
auf Bestellung 2374 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.08 EUR
10+2.15 EUR
100+1.62 EUR
500+1.43 EUR
1000+1.34 EUR
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STD110N8F6 STD110N8F6 STMicroelectronics std110n8f6-1850459.pdf MOSFETs N-channel 80 V, 0.0056 Ohm typ 110 A, STripFET F6 Power MOSFET
auf Bestellung 12658 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.66 EUR
10+1.92 EUR
100+1.51 EUR
250+1.50 EUR
500+1.33 EUR
1000+1.27 EUR
2500+1.21 EUR
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STF10N80K5 STF10N80K5 STMicroelectronics stf10n80k5-1850387.pdf MOSFETs N-channel 800 V, 0.470 Ohm typ 9 A MDmesh K5 Power MOSFET
auf Bestellung 677 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.19 EUR
25+2.75 EUR
100+2.57 EUR
250+2.55 EUR
500+2.32 EUR
1000+2.25 EUR
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STF10N80K5 STF10N80K5 STMicroelectronics en.DM00122529.pdf Description: MOSFET N-CH 800V 9A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 635 pF @ 100 V
auf Bestellung 795 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.65 EUR
50+3.38 EUR
100+3.07 EUR
500+2.51 EUR
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STFU10N80K5 STFU10N80K5 STMicroelectronics stf10n80k5-1850387.pdf MOSFETs N-channel 800 V, 0.470 Ohm typ 9 A MDmesh K5 Power MOSFET
auf Bestellung 998 Stücke:
Lieferzeit 108-112 Tag (e)
1+5.28 EUR
10+3.57 EUR
25+3.40 EUR
100+2.96 EUR
250+2.82 EUR
500+2.68 EUR
1000+2.24 EUR
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STH10N80K5-2AG STH10N80K5-2AG STMicroelectronics sth10n80k5-2ag.pdf Description: MOSFET N-CH 800V 8A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 680mOhm @ 4A, 10V
Power Dissipation (Max): 121W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: H2Pak-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 426 pF @ 100 V
Qualification: AEC-Q101
auf Bestellung 831 Stücke:
Lieferzeit 10-14 Tag (e)
2+8.92 EUR
10+5.95 EUR
100+4.26 EUR
500+3.53 EUR
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STH10N80K5-2AG STH10N80K5-2AG STMicroelectronics sth10n80k5_2ag-1892175.pdf MOSFETs Automotive-grade N-channel 800V, 0.60 Ohm 8A MDmesh K5 Power MOSFET
auf Bestellung 804 Stücke:
Lieferzeit 10-14 Tag (e)
1+8.69 EUR
10+5.86 EUR
100+4.21 EUR
500+3.52 EUR
1000+3.45 EUR
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STO-01T-110N-8 STO-01T-110N-8 JST Commercial eTAB_ON_IN_CHAIN-3476910.pdf Terminals TAB-ON TERMINAL STO-110 SERIES
auf Bestellung 30000 Stücke:
Lieferzeit 144-148 Tag (e)
17+0.17 EUR
37+0.08 EUR
100+0.06 EUR
500+0.05 EUR
1000+0.04 EUR
2500+0.04 EUR
5000+0.04 EUR
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STO-41T-110N-8 JST Commercial eTAB_ON_IN_CHAIN-3476907.pdf Automotive Connectors TAB-ON CHAIN TERMINAL
auf Bestellung 29245 Stücke:
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17+0.17 EUR
34+0.08 EUR
100+0.06 EUR
500+0.05 EUR
1000+0.05 EUR
2500+0.04 EUR
5000+0.04 EUR
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STP10N80K5 STP10N80K5 STMicroelectronics stp10n80k5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 6A; Idm: 36A; 130W
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 22nC
Pulsed drain current: 36A
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.30 EUR
19+3.88 EUR
25+2.97 EUR
26+2.82 EUR
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STP10N80K5 STP10N80K5 STMicroelectronics stp10n80k5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 6A; Idm: 36A; 130W
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 22nC
Pulsed drain current: 36A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 39 Stücke:
Lieferzeit 7-14 Tag (e)
17+4.30 EUR
19+3.88 EUR
25+2.97 EUR
26+2.82 EUR
Mindestbestellmenge: 17
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STP110N8F6 STP110N8F6 STMicroelectronics en.DM00130827.pdf Description: MOSFET N-CH 80V 110A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 55A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9130 pF @ 40 V
auf Bestellung 687 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.84 EUR
50+1.86 EUR
100+1.67 EUR
500+1.34 EUR
Mindestbestellmenge: 5
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TN2510N8-G TN2510N8-G MICROCHIP TECHNOLOGY TN2510-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005950A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3A; 1.6W; SOT89-3
Mounting: SMD
Case: SOT89-3
Drain-source voltage: 100V
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 3A
auf Bestellung 157 Stücke:
Lieferzeit 14-21 Tag (e)
38+1.89 EUR
40+1.83 EUR
48+1.50 EUR
51+1.42 EUR
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TN2510N8-G TN2510N8-G MICROCHIP TECHNOLOGY TN2510-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005950A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3A; 1.6W; SOT89-3
Mounting: SMD
Case: SOT89-3
Drain-source voltage: 100V
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 3A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 157 Stücke:
Lieferzeit 7-14 Tag (e)
38+1.89 EUR
40+1.83 EUR
48+1.50 EUR
51+1.42 EUR
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TN2510N8-G Microchip TN2510-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005950A.pdf Transistor N-Channel MOSFET; 100V; 20V; 15Ohm; 730mA; 1,6W; -55°C ~ 150°C; TN2510N8-G TTN2510n8
Anzahl je Verpackung: 5 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
10+5.04 EUR
Mindestbestellmenge: 10
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TN2510N8-G TN2510N8-G Microchip Technology TN2510_N_Channel_Enhancement_Mode_Vertical_DMOS_FE-3442100.pdf MOSFETs 100V 1.5Ohm
auf Bestellung 7028 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.25 EUR
25+1.88 EUR
100+1.71 EUR
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TN2510N8-G TN2510N8-G Microchip Technology TN2510-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005950A.pdf Description: MOSFET N-CH 100V 730MA TO243AA
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 730mA (Tj)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
auf Bestellung 2384 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.27 EUR
25+1.90 EUR
100+1.72 EUR
Mindestbestellmenge: 8
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TN2510N8-G TN2510N8-G Microchip Technology TN2510-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005950A.pdf Description: MOSFET N-CH 100V 730MA TO243AA
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 730mA (Tj)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+1.72 EUR
Mindestbestellmenge: 2000
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TP2510N8-G TP2510N8-G MICROCHIP TECHNOLOGY tp2510.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -1.5A; 1.6W; SOT89-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Pulsed drain current: -1.5A
Power dissipation: 1.6W
Case: SOT89-3
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 875 Stücke:
Lieferzeit 14-21 Tag (e)
41+1.77 EUR
46+1.59 EUR
57+1.26 EUR
59+1.22 EUR
63+1.14 EUR
100+1.10 EUR
Mindestbestellmenge: 41
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TP2510N8-G Microchip TP2510-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005965.pdf P-MOSFET 100V 480mA 3.5mΩ 1.6W TP2510N8-G Microchip Tech TTP2510n8
Anzahl je Verpackung: 10 Stücke
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)
10+3.19 EUR
Mindestbestellmenge: 10
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TP2510N8-G TP2510N8-G Microchip Technology TP2510_P_Channel_Enhancement_Mode_Vertical_DMOS_FE-3445595.pdf MOSFETs 100V 3.5Ohm
auf Bestellung 3760 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.57 EUR
25+2.15 EUR
100+1.92 EUR
Mindestbestellmenge: 2
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TP2510N8-G TP2510N8-G Microchip Technology TP2510-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005965.pdf Description: MOSFET P-CH 100V 480MA TO243AA
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 480mA (Tj)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
auf Bestellung 11614 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.59 EUR
25+2.16 EUR
100+1.94 EUR
Mindestbestellmenge: 7
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TP2510N8-G TP2510N8-G Microchip Technology TP2510-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005965.pdf Description: MOSFET P-CH 100V 480MA TO243AA
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 480mA (Tj)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+1.94 EUR
Mindestbestellmenge: 2000
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WMJ10N80D1 WMJ10N80D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 10A; Idm: 40A; 215W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 215W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 910mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 33nC
Pulsed drain current: 40A
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
33+2.19 EUR
41+1.76 EUR
48+1.49 EUR
Mindestbestellmenge: 33
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WMK10N80M3 WMK10N80M3 WAYON WMx10N80M3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.03Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
auf Bestellung 335 Stücke:
Lieferzeit 14-21 Tag (e)
28+2.56 EUR
34+2.14 EUR
42+1.72 EUR
74+0.97 EUR
79+0.92 EUR
Mindestbestellmenge: 28
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WML10N80D1B WML10N80D1B WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 40A; 62.5W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 62.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 910mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 33nC
Pulsed drain current: 40A
auf Bestellung 963 Stücke:
Lieferzeit 14-21 Tag (e)
71+1.02 EUR
86+0.84 EUR
108+0.66 EUR
115+0.63 EUR
500+0.62 EUR
Mindestbestellmenge: 71
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WML10N80M3 WML10N80M3 WAYON WMx10N80M3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.03Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 132 Stücke:
Lieferzeit 14-21 Tag (e)
56+1.29 EUR
61+1.19 EUR
80+0.90 EUR
84+0.86 EUR
Mindestbestellmenge: 56
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WMO10N80M3 WMO10N80M3 WAYON WMx10N80M3.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.03Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2198 Stücke:
Lieferzeit 14-21 Tag (e)
70+1.03 EUR
88+0.82 EUR
101+0.71 EUR
107+0.67 EUR
112+0.64 EUR
500+0.61 EUR
Mindestbestellmenge: 70
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FQA10N80 Fairchild FAIRS24245-1.pdf?t.download=true&u=5oefqw
auf Bestellung 2100 Stücke:
Lieferzeit 21-28 Tag (e)
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FQA10N80C FAIRCHILD FQA10N80C.pdf 2005 TO-3P
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
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FQA10N80C-F109 ON Semiconductor fqa10n80c_f109-d.pdf
auf Bestellung 11250 Stücke:
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FUS10N878A 04+
auf Bestellung 1 Stücke:
Lieferzeit 21-28 Tag (e)
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KSV3110N-8
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)
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MTP10N80
auf Bestellung 3355 Stücke:
Lieferzeit 21-28 Tag (e)
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SSF10N80A FAIRS06924-1.pdf?t.download=true&u=5oefqw
auf Bestellung 5800 Stücke:
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0500798000-10-N8-D
0500798000-10-N8-D
Hersteller: Molex
Description: 10" PRE-CRIMP 1852 BROWN
Packaging: Bulk
Contact Finish: Tin
Color: Brown
Length: 10.0" (254.0mm)
Wire Gauge: 28 AWG
Contact End: Socket to Socket
Contact Finish Thickness: 35.4µin (0.90µm)
auf Bestellung 340 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.20 EUR
30+1.09 EUR
50+1.04 EUR
100+0.98 EUR
250+0.90 EUR
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1210N822J500CT WTC_MLCC_General_Purpose-1534899.pdf
1210N822J500CT
Hersteller: Walsin
Multilayer Ceramic Capacitors MLCC - SMD/SMT 8200pF +-5% 50V
auf Bestellung 380 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.72 EUR
10+0.49 EUR
100+0.29 EUR
1000+0.20 EUR
3000+0.18 EUR
9000+0.16 EUR
24000+0.15 EUR
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A10N8P Spec-00310.pdf
A10N8P
Hersteller: Hoffman Enclosures, Inc.
Description: PANEL N1 8.25X6.25
Packaging: Bulk
Features: Mounting Hardware
Color: White
Size / Dimension: 8.250" L x 6.250" W (209.55mm x 158.75mm)
For Use With/Related Products: Enclosures
Material: Metal, Steel
Type: Panel
auf Bestellung 31 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+29.94 EUR
5+25.59 EUR
10+23.92 EUR
25+21.88 EUR
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FDBL0210N80 fdbl0210n80-d.pdf
FDBL0210N80
Hersteller: onsemi / Fairchild
MOSFETs Code D IMR
auf Bestellung 3849 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+8.31 EUR
10+6.55 EUR
25+6.53 EUR
100+4.93 EUR
500+4.75 EUR
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FDBL0210N80 fdbl0210n80-d.pdf
FDBL0210N80
Hersteller: onsemi
Description: MOSFET N-CH 80V 240A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 40 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+4.62 EUR
Mindestbestellmenge: 2000
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FDBL0210N80 fdbl0210n80-d.pdf
FDBL0210N80
Hersteller: onsemi
Description: MOSFET N-CH 80V 240A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 40 V
auf Bestellung 3622 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.04 EUR
10+7.44 EUR
100+5.40 EUR
500+4.62 EUR
Mindestbestellmenge: 2
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FQA10N80 FAIRS24245-1.pdf?t.download=true&u=5oefqw
FQA10N80
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 800V 9.8A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 4.9A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
auf Bestellung 9066 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
193+2.63 EUR
Mindestbestellmenge: 193
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FQAF10N80 FAIRS17098-1.pdf?t.download=true&u=5oefqw
FQAF10N80
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 800V 6.7A TO3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 3.35A, 10V
Power Dissipation (Max): 113W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2700 pF @ 25 V
auf Bestellung 7549 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
166+3.06 EUR
Mindestbestellmenge: 166
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FRW 10 N - 8 OHM FRW%2010%20N_2032.pdf
FRW 10 N - 8 OHM
Hersteller: Visaton GmbH & Co. KG
Description: SPEAKER 8OHM 10W TOP PORT 86DB
Packaging: Bulk
Size / Dimension: 4.016" L x 4.016" W (102.00mm x 102.00mm)
Shape: Round, Square Frame
Termination: Quick Connect
Frequency - Self Resonant: 120Hz
Port Location: Top
Height - Seated (Max): 1.504" (38.20mm)
Part Status: Active
Impedance: 8 Ohms
Power - Max: 20 W
Power - Rated: 10 W
Frequency Range: 80 Hz ~ 17 kHz
Efficiency - dBA: 86.00
Efficiency - Testing: 1W/1M
Efficiency - Type: Sound Pressure Level (SPL)
auf Bestellung 53 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+21.14 EUR
10+17.22 EUR
25+15.88 EUR
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IXFA10N80P IXFA(H,P,Q)10N80P.pdf
IXFA10N80P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 300W
Case: TO263
Mounting: SMD
Kind of channel: enhancement
Kind of package: tube
Gate charge: 40nC
auf Bestellung 270 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
15+5.08 EUR
16+4.56 EUR
20+3.65 EUR
21+3.45 EUR
Mindestbestellmenge: 15
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IXFA10N80P IXFA(H,P,Q)10N80P.pdf
IXFA10N80P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; Polar™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 300W
Case: TO263
Mounting: SMD
Kind of channel: enhancement
Kind of package: tube
Gate charge: 40nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 270 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
15+5.08 EUR
16+4.56 EUR
20+3.65 EUR
21+3.45 EUR
Mindestbestellmenge: 15
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IXFA10N80P media-3322078.pdf
IXFA10N80P
Hersteller: IXYS
MOSFETs 10 Amps 800V 1.1 Rds
auf Bestellung 9595 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.85 EUR
10+6.53 EUR
50+4.40 EUR
100+4.05 EUR
500+3.84 EUR
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IXFA10N80P littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_10n80p_datasheet.pdf.pdf
IXFA10N80P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 800V 10A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
auf Bestellung 10400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.92 EUR
50+4.45 EUR
100+4.10 EUR
500+3.55 EUR
Mindestbestellmenge: 3
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IXFH10N80P IXFA(H,P,Q)10N80P.pdf
IXFH10N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 40nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Drain-source voltage: 800V
Drain current: 10A
auf Bestellung 304 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
11+6.81 EUR
16+4.68 EUR
17+4.43 EUR
Mindestbestellmenge: 11
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IXFH10N80P IXFA(H,P,Q)10N80P.pdf
IXFH10N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 10A; 300W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Power dissipation: 300W
Case: TO247-3
Mounting: THT
Kind of package: tube
Gate charge: 40nC
Technology: HiPerFET™; Polar™
Kind of channel: enhancement
Drain-source voltage: 800V
Drain current: 10A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 304 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
11+6.81 EUR
16+4.68 EUR
17+4.43 EUR
510+4.26 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
IXFH10N80P media-3322078.pdf
IXFH10N80P
Hersteller: IXYS
MOSFETs 10 Amps 800V 1.1 Rds
auf Bestellung 584 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+8.76 EUR
10+8.06 EUR
30+5.79 EUR
120+5.23 EUR
270+5.19 EUR
510+5.17 EUR
1020+4.95 EUR
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IXFH10N80P littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_10n80p_datasheet.pdf.pdf
IXFH10N80P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 800V 10A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-247AD (IXFH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
auf Bestellung 72 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.63 EUR
30+5.83 EUR
Mindestbestellmenge: 2
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IXFN110N85X IXFN110N85X.pdf
IXFN110N85X
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 850V; 110A; SOT227B; screw; Idm: 220A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 850V
Drain current: 110A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 33mΩ
Pulsed drain current: 220A
Power dissipation: 1170W
Technology: HiPerFET™; X-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 205ns
Gate charge: 425nC
Kind of channel: enhancement
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+92.21 EUR
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IXFN110N85X IXFN110N85X.pdf
IXFN110N85X
Hersteller: IXYS
Category: Transistor modules MOSFET
Description: Module; single transistor; 850V; 110A; SOT227B; screw; Idm: 220A
Type of module: MOSFET transistor
Semiconductor structure: single transistor
Drain-source voltage: 850V
Drain current: 110A
Case: SOT227B
Electrical mounting: screw
Polarisation: unipolar
On-state resistance: 33mΩ
Pulsed drain current: 220A
Power dissipation: 1170W
Technology: HiPerFET™; X-Class
Gate-source voltage: ±40V
Mechanical mounting: screw
Reverse recovery time: 205ns
Gate charge: 425nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
1+92.21 EUR
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IXFN110N85X media-3322450.pdf
IXFN110N85X
Hersteller: IXYS
MOSFET Modules 850V X-Class HiPerFE Power MOSFET
auf Bestellung 258 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+123.50 EUR
10+112.55 EUR
20+112.53 EUR
50+112.48 EUR
100+102.94 EUR
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IXFN110N85X IXFN110N85X%20data%20sheet.pdf
IXFN110N85X
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 850V 110A SOT227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 33mOhm @ 55A, 10V
Power Dissipation (Max): 1170W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 850 V
Gate Charge (Qg) (Max) @ Vgs: 425 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 17000 pF @ 25 V
auf Bestellung 80 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+122.46 EUR
10+111.16 EUR
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IXFP10N80P media-3322078.pdf
IXFP10N80P
Hersteller: IXYS
MOSFETs 10 Amps 800V 1.1 Rds
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+8.80 EUR
50+4.98 EUR
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IXFP10N80P littelfuse_discrete_mosfets_n-channel_hiperfets_ixf_10n80p_datasheet.pdf.pdf
IXFP10N80P
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 800V 10A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 5A, 10V
Power Dissipation (Max): 300W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 2.5mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2050 pF @ 25 V
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+8.87 EUR
50+5.02 EUR
100+4.63 EUR
Mindestbestellmenge: 2
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SC 10 N - 8 OHM SC%2010%20N.pdf
SC 10 N - 8 OHM
Hersteller: Visaton GmbH & Co. KG
Description: SPEAKER 8OHM TOP PORT 90DB
Packaging: Bulk
Size / Dimension: 4.094" Dia (104.00mm)
Shape: Round
Type: General Purpose
Technology: Magnetic
Frequency - Self Resonant: 1.7kHz
Port Location: Top
Height - Seated (Max): 1.437" (36.50mm)
Part Status: Active
Impedance: 8 Ohms
Frequency Range: 1 kHz ~ 20 kHz
Efficiency - dBA: 90.00
Efficiency - Testing: 1W/1M
Efficiency - Type: Sound Pressure Level (SPL)
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+39.30 EUR
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SSF10N80A FAIRS06924-1.pdf?t.download=true&u=5oefqw
Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 950mOhm @ 3A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-3PF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 165 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
auf Bestellung 1381 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
123+4.14 EUR
Mindestbestellmenge: 123
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STD110N8F6 en.DM00151073.pdf
STD110N8F6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 80V 80A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 40A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9130 pF @ 40 V
auf Bestellung 2374 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.08 EUR
10+2.15 EUR
100+1.62 EUR
500+1.43 EUR
1000+1.34 EUR
Mindestbestellmenge: 6
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STD110N8F6 std110n8f6-1850459.pdf
STD110N8F6
Hersteller: STMicroelectronics
MOSFETs N-channel 80 V, 0.0056 Ohm typ 110 A, STripFET F6 Power MOSFET
auf Bestellung 12658 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.66 EUR
10+1.92 EUR
100+1.51 EUR
250+1.50 EUR
500+1.33 EUR
1000+1.27 EUR
2500+1.21 EUR
Mindestbestellmenge: 2
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STF10N80K5 stf10n80k5-1850387.pdf
STF10N80K5
Hersteller: STMicroelectronics
MOSFETs N-channel 800 V, 0.470 Ohm typ 9 A MDmesh K5 Power MOSFET
auf Bestellung 677 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.19 EUR
25+2.75 EUR
100+2.57 EUR
250+2.55 EUR
500+2.32 EUR
1000+2.25 EUR
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STF10N80K5 en.DM00122529.pdf
STF10N80K5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 9A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 4.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 635 pF @ 100 V
auf Bestellung 795 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.65 EUR
50+3.38 EUR
100+3.07 EUR
500+2.51 EUR
Mindestbestellmenge: 3
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STFU10N80K5 stf10n80k5-1850387.pdf
STFU10N80K5
Hersteller: STMicroelectronics
MOSFETs N-channel 800 V, 0.470 Ohm typ 9 A MDmesh K5 Power MOSFET
auf Bestellung 998 Stücke:
Lieferzeit 108-112 Tag (e)
Anzahl Preis
1+5.28 EUR
10+3.57 EUR
25+3.40 EUR
100+2.96 EUR
250+2.82 EUR
500+2.68 EUR
1000+2.24 EUR
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STH10N80K5-2AG sth10n80k5-2ag.pdf
STH10N80K5-2AG
Hersteller: STMicroelectronics
Description: MOSFET N-CH 800V 8A H2PAK-2
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 680mOhm @ 4A, 10V
Power Dissipation (Max): 121W (Tc)
Vgs(th) (Max) @ Id: 5V @ 100µA
Supplier Device Package: H2Pak-2
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 17.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 426 pF @ 100 V
Qualification: AEC-Q101
auf Bestellung 831 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+8.92 EUR
10+5.95 EUR
100+4.26 EUR
500+3.53 EUR
Mindestbestellmenge: 2
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STH10N80K5-2AG sth10n80k5_2ag-1892175.pdf
STH10N80K5-2AG
Hersteller: STMicroelectronics
MOSFETs Automotive-grade N-channel 800V, 0.60 Ohm 8A MDmesh K5 Power MOSFET
auf Bestellung 804 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+8.69 EUR
10+5.86 EUR
100+4.21 EUR
500+3.52 EUR
1000+3.45 EUR
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STO-01T-110N-8 eTAB_ON_IN_CHAIN-3476910.pdf
STO-01T-110N-8
Hersteller: JST Commercial
Terminals TAB-ON TERMINAL STO-110 SERIES
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Lieferzeit 144-148 Tag (e)
Anzahl Preis
17+0.17 EUR
37+0.08 EUR
100+0.06 EUR
500+0.05 EUR
1000+0.04 EUR
2500+0.04 EUR
5000+0.04 EUR
Mindestbestellmenge: 17
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STO-41T-110N-8 eTAB_ON_IN_CHAIN-3476907.pdf
Hersteller: JST Commercial
Automotive Connectors TAB-ON CHAIN TERMINAL
auf Bestellung 29245 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+0.17 EUR
34+0.08 EUR
100+0.06 EUR
500+0.05 EUR
1000+0.05 EUR
2500+0.04 EUR
5000+0.04 EUR
Mindestbestellmenge: 17
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STP10N80K5 stp10n80k5.pdf
STP10N80K5
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 6A; Idm: 36A; 130W
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 22nC
Pulsed drain current: 36A
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.30 EUR
19+3.88 EUR
25+2.97 EUR
26+2.82 EUR
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STP10N80K5 stp10n80k5.pdf
STP10N80K5
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ K5; unipolar; 800V; 6A; Idm: 36A; 130W
Type of transistor: N-MOSFET
Technology: MDmesh™ K5
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 22nC
Pulsed drain current: 36A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 39 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
17+4.30 EUR
19+3.88 EUR
25+2.97 EUR
26+2.82 EUR
Mindestbestellmenge: 17
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STP110N8F6 en.DM00130827.pdf
STP110N8F6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 80V 110A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 55A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9130 pF @ 40 V
auf Bestellung 687 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.84 EUR
50+1.86 EUR
100+1.67 EUR
500+1.34 EUR
Mindestbestellmenge: 5
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TN2510N8-G TN2510-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005950A.pdf
TN2510N8-G
Hersteller: MICROCHIP TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3A; 1.6W; SOT89-3
Mounting: SMD
Case: SOT89-3
Drain-source voltage: 100V
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 3A
auf Bestellung 157 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
38+1.89 EUR
40+1.83 EUR
48+1.50 EUR
51+1.42 EUR
Mindestbestellmenge: 38
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TN2510N8-G TN2510-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005950A.pdf
TN2510N8-G
Hersteller: MICROCHIP TECHNOLOGY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3A; 1.6W; SOT89-3
Mounting: SMD
Case: SOT89-3
Drain-source voltage: 100V
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Power dissipation: 1.6W
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
Pulsed drain current: 3A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 157 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
38+1.89 EUR
40+1.83 EUR
48+1.50 EUR
51+1.42 EUR
Mindestbestellmenge: 38
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TN2510N8-G TN2510-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005950A.pdf
Hersteller: Microchip
Transistor N-Channel MOSFET; 100V; 20V; 15Ohm; 730mA; 1,6W; -55°C ~ 150°C; TN2510N8-G TTN2510n8
Anzahl je Verpackung: 5 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
10+5.04 EUR
Mindestbestellmenge: 10
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TN2510N8-G TN2510_N_Channel_Enhancement_Mode_Vertical_DMOS_FE-3442100.pdf
TN2510N8-G
Hersteller: Microchip Technology
MOSFETs 100V 1.5Ohm
auf Bestellung 7028 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.25 EUR
25+1.88 EUR
100+1.71 EUR
Mindestbestellmenge: 2
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TN2510N8-G TN2510-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005950A.pdf
TN2510N8-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 100V 730MA TO243AA
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 730mA (Tj)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
auf Bestellung 2384 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.27 EUR
25+1.90 EUR
100+1.72 EUR
Mindestbestellmenge: 8
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TN2510N8-G TN2510-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005950A.pdf
TN2510N8-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 100V 730MA TO243AA
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 730mA (Tj)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+1.72 EUR
Mindestbestellmenge: 2000
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TP2510N8-G tp2510.pdf
TP2510N8-G
Hersteller: MICROCHIP TECHNOLOGY
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -1.5A; 1.6W; SOT89-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Pulsed drain current: -1.5A
Power dissipation: 1.6W
Case: SOT89-3
Gate-source voltage: ±20V
On-state resistance: 3.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 875 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.77 EUR
46+1.59 EUR
57+1.26 EUR
59+1.22 EUR
63+1.14 EUR
100+1.10 EUR
Mindestbestellmenge: 41
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TP2510N8-G TP2510-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005965.pdf
Hersteller: Microchip
P-MOSFET 100V 480mA 3.5mΩ 1.6W TP2510N8-G Microchip Tech TTP2510n8
Anzahl je Verpackung: 10 Stücke
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
10+3.19 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
TP2510N8-G TP2510_P_Channel_Enhancement_Mode_Vertical_DMOS_FE-3445595.pdf
TP2510N8-G
Hersteller: Microchip Technology
MOSFETs 100V 3.5Ohm
auf Bestellung 3760 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.57 EUR
25+2.15 EUR
100+1.92 EUR
Mindestbestellmenge: 2
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TP2510N8-G TP2510-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005965.pdf
TP2510N8-G
Hersteller: Microchip Technology
Description: MOSFET P-CH 100V 480MA TO243AA
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 480mA (Tj)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
auf Bestellung 11614 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.59 EUR
25+2.16 EUR
100+1.94 EUR
Mindestbestellmenge: 7
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TP2510N8-G TP2510-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005965.pdf
TP2510N8-G
Hersteller: Microchip Technology
Description: MOSFET P-CH 100V 480MA TO243AA
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 480mA (Tj)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+1.94 EUR
Mindestbestellmenge: 2000
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WMJ10N80D1
WMJ10N80D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 10A; Idm: 40A; 215W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 215W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 910mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 33nC
Pulsed drain current: 40A
auf Bestellung 48 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
33+2.19 EUR
41+1.76 EUR
48+1.49 EUR
Mindestbestellmenge: 33
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WMK10N80M3 WMx10N80M3.pdf
WMK10N80M3
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO220-3
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 85W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 1.03Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Heatsink thickness: 1.2...1.45mm
auf Bestellung 335 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
28+2.56 EUR
34+2.14 EUR
42+1.72 EUR
74+0.97 EUR
79+0.92 EUR
Mindestbestellmenge: 28
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WML10N80D1B
WML10N80D1B
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 10A; Idm: 40A; 62.5W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 62.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 910mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 33nC
Pulsed drain current: 40A
auf Bestellung 963 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
71+1.02 EUR
86+0.84 EUR
108+0.66 EUR
115+0.63 EUR
500+0.62 EUR
Mindestbestellmenge: 71
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WML10N80M3 WMx10N80M3.pdf
WML10N80M3
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 31W; TO220FP
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 31W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.03Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 132 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
56+1.29 EUR
61+1.19 EUR
80+0.90 EUR
84+0.86 EUR
Mindestbestellmenge: 56
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WMO10N80M3 WMx10N80M3.pdf
WMO10N80M3
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.03Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2198 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
70+1.03 EUR
88+0.82 EUR
101+0.71 EUR
107+0.67 EUR
112+0.64 EUR
500+0.61 EUR
Mindestbestellmenge: 70
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FQA10N80 FAIRS24245-1.pdf?t.download=true&u=5oefqw
Hersteller: Fairchild
auf Bestellung 2100 Stücke:
Lieferzeit 21-28 Tag (e)
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FQA10N80C FQA10N80C.pdf
Hersteller: FAIRCHILD
2005 TO-3P
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
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FQA10N80C-F109 fqa10n80c_f109-d.pdf
Hersteller: ON Semiconductor
auf Bestellung 11250 Stücke:
Lieferzeit 21-28 Tag (e)
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FUS10N878A
04+
auf Bestellung 1 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
KSV3110N-8
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
MTP10N80
auf Bestellung 3355 Stücke:
Lieferzeit 21-28 Tag (e)
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SSF10N80A FAIRS06924-1.pdf?t.download=true&u=5oefqw
auf Bestellung 5800 Stücke:
Lieferzeit 21-28 Tag (e)
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