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HGTG12N60A4D HGTG12N60A4D
Produktcode: 31158
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Fairchild hgt1s12n60a4ds-d.pdf Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247
Vces: 600 V
Vce: 2,7 V
Ic 25: 54 A
Ic 100: 23 A
Pd 25: 167 W
td(on)/td(off) 100-150 Grad: 17/96
auf Bestellung 4 Stück:
Lieferzeit 21-28 Tag (e)
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HGTP12N60C3D HGTP12N60C3D
Produktcode: 122684
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Fairchild hgtp12n60c3d-1010383.pdf Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-220
Vces: 600 V
Vce: 1,65 V
Ic 25: 24 A
Ic 100: 12 А
Pd 25: 104 W
td(on)/td(off) 100-150 Grad: 28/270
auf Bestellung 19 Stück:
Lieferzeit 21-28 Tag (e)
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12N60
auf Bestellung 4653 Stücke:
Lieferzeit 21-28 Tag (e)
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AOT12N60 ALPHA&OMEGA AOT12N60.pdf Transistor N-Channel MOSFET; 600V; 30V; 550mOhm; 12A; 278W; -55°C ~ 150°C; AOT12N60 TAOT12n60
Anzahl je Verpackung: 10 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)
10+2.91 EUR
Mindestbestellmenge: 10
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AOTF12N60 AOTF12N60 ALPHA & OMEGA SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A3F356328B498A50&compId=AOTF12N60-DTE.pdf?ci_sign=45ce98480754c09b78461a7fa6ed858ab96e6d3b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.7A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.7A
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 40nC
Kind of channel: enhancement
auf Bestellung 622 Stücke:
Lieferzeit 14-21 Tag (e)
32+2.3 EUR
39+1.86 EUR
44+1.66 EUR
49+1.49 EUR
50+1.43 EUR
54+1.33 EUR
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AOTF12N60 ALPHA&OMEGA TO220F.pdf Transistor N-Channel MOSFET; 600V; 30V; 550mOhm; 12A; 50W; -55°C ~ 150°C; AOTF12N60 TAOTF12n60
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
10+2.82 EUR
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AOTF12N60 AOTF12N60 ALPHA & OMEGA SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A3F356328B498A50&compId=AOTF12N60-DTE.pdf?ci_sign=45ce98480754c09b78461a7fa6ed858ab96e6d3b Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.7A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.7A
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 40nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 622 Stücke:
Lieferzeit 7-14 Tag (e)
32+2.3 EUR
39+1.86 EUR
44+1.66 EUR
49+1.49 EUR
50+1.43 EUR
54+1.33 EUR
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AOTF12N60FD ALPHA&OMEGA AOTF12N60FD.pdf Transistor N-Channel MOSFET; 600V; 30V; 650mOhm; 12A; 50W; -55°C ~ 150°C; AOTF12N60FD TAOTF12n60fd
Anzahl je Verpackung: 10 Stücke
auf Bestellung 22 Stücke:
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10+2.82 EUR
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AOTF12N60FD ALPHA&OMEGA AOTF12N60FD.pdf Transistor N-Channel MOSFET; 600V; 30V; 650mOhm; 12A; 50W; -55°C ~ 150°C; AOTF12N60FD TAOTF12n60fd
Anzahl je Verpackung: 10 Stücke
auf Bestellung 10 Stücke:
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AOTF12N60FD ALPHA&OMEGA AOTF12N60FD.pdf Transistor N-Channel MOSFET; 600V; 30V; 650mOhm; 12A; 50W; -55°C ~ 150°C; AOTF12N60FD TAOTF12n60fd
Anzahl je Verpackung: 10 Stücke
auf Bestellung 28 Stücke:
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AOTF12N60L AOTF12N60L Alpha & Omega Semiconductor Inc. AOT12N60.pdf Description: MOSFET N-CH 600V 12A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 239 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.64 EUR
50+1.78 EUR
100+1.6 EUR
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FDPF12N60NZ FDPF12N60NZ ONSEMI FDPF12N60NZ-D.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.2A; 240W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.2A
Power dissipation: 240W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 204 Stücke:
Lieferzeit 14-21 Tag (e)
24+2.99 EUR
40+1.83 EUR
42+1.73 EUR
50+1.7 EUR
100+1.66 EUR
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FDPF12N60NZ FDPF12N60NZ ONSEMI FDPF12N60NZ-D.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.2A; 240W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.2A
Power dissipation: 240W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 204 Stücke:
Lieferzeit 7-14 Tag (e)
24+2.99 EUR
40+1.83 EUR
42+1.73 EUR
50+1.7 EUR
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FDPF12N60NZ FDPF12N60NZ onsemi FDPF12N60NZ-D.PDF Description: MOSFET N-CH 600V 12A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1676 pF @ 25 V
auf Bestellung 453 Stücke:
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5+3.82 EUR
50+2.25 EUR
100+2.11 EUR
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FDPF12N60NZ FDPF12N60NZ onsemi / Fairchild FDPF12N60NZ-D.PDF MOSFETs UNIFET2 600V N-CH MOSFET SINGLE GAGE
auf Bestellung 2401 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.21 EUR
10+2.32 EUR
100+2.16 EUR
500+1.88 EUR
1000+1.74 EUR
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FQA12N60 FQA12N60 Fairchild Semiconductor FAIRS42369-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 12A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 6A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
auf Bestellung 9750 Stücke:
Lieferzeit 10-14 Tag (e)
201+2.27 EUR
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FQB12N60TM FQB12N60TM Fairchild Semiconductor FAIRS19087-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 5.3A, 10V
Power Dissipation (Max): 3.13W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
auf Bestellung 6990 Stücke:
Lieferzeit 10-14 Tag (e)
229+1.98 EUR
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FQI12N60CTU FQI12N60CTU Fairchild Semiconductor FAIRS25683-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 12A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 3.13W (Ta), 225W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 25 V
auf Bestellung 2882 Stücke:
Lieferzeit 10-14 Tag (e)
226+2.01 EUR
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FQI12N60TU FQI12N60TU Fairchild Semiconductor FAIRS19087-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 10.5A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 5.3A, 10V
Power Dissipation (Max): 3.13W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
auf Bestellung 627 Stücke:
Lieferzeit 10-14 Tag (e)
224+2.03 EUR
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FQP12N60 FQP12N60 Fairchild Semiconductor FAIRS07073-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 10.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 5.3A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
auf Bestellung 9664 Stücke:
Lieferzeit 10-14 Tag (e)
182+2.5 EUR
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FQP12N60C FQP12N60C Fairchild Semiconductor FAIRS46957-1.pdf?t.download=true&u=5oefqw Description: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 225W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 25 V
auf Bestellung 4340 Stücke:
Lieferzeit 10-14 Tag (e)
176+2.59 EUR
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FQPF12N60 FQPF12N60 Fairchild Semiconductor FAIRS17575-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 5.8A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 2.9A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
auf Bestellung 55453 Stücke:
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110+4.14 EUR
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FQPF12N60T FQPF12N60T Fairchild Semiconductor FAIRS17575-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 600V 5.8A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 2.9A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
auf Bestellung 1336 Stücke:
Lieferzeit 10-14 Tag (e)
235+1.94 EUR
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HGT1S12N60A4DS HGT1S12N60A4DS Fairchild Semiconductor FAIR-S-A0000012348-1.pdf?t.download=true&u=5oefqw Description: IGBT 600V 54A TO-263AB
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: TO-263AB
Td (on/off) @ 25°C: 17ns/96ns
Switching Energy: 55µJ (on), 50µJ (off)
Test Condition: 390V, 12A, 10Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 54 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 167 W
auf Bestellung 2395 Stücke:
Lieferzeit 10-14 Tag (e)
86+5.29 EUR
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HGT1S12N60B3 HGT1S12N60B3 Harris Corporation HRISSC96-1.pdf?t.download=true&u=5oefqw Description: IGBT 600V 27A TO-262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: TO-262 (I2PAK)
Td (on/off) @ 25°C: 26ns/150ns
Switching Energy: 304µJ (on), 250µJ (off)
Test Condition: 480V, 12A, 25Ohm, 15V
Gate Charge: 68 nC
Part Status: Active
Current - Collector (Ic) (Max): 27 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 104 W
auf Bestellung 917 Stücke:
Lieferzeit 10-14 Tag (e)
181+2.51 EUR
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HGT1S12N60B3D HGT1S12N60B3D Harris Corporation HRISSD10-1.pdf?t.download=true&u=5oefqw Description: IGBT 600V 27A I2PAK
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: I2PAK (TO-262)
Td (on/off) @ 25°C: 26ns/150ns
Switching Energy: 304µJ (on), 250µJ (off)
Test Condition: 480V, 12A, 25Ohm, 15V
Gate Charge: 78 nC
Part Status: Active
Current - Collector (Ic) (Max): 27 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 104 W
auf Bestellung 400 Stücke:
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181+2.51 EUR
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HGT1S12N60B3DS Harris Corporation HRISSD10-1.pdf?t.download=true&u=5oefqw Description: IGBT 600V 27A TO-263AB
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: TO-263AB
Td (on/off) @ 25°C: 26ns/150ns
Switching Energy: 304µJ (on), 250µJ (off)
Test Condition: 480V, 12A, 25Ohm, 15V
Gate Charge: 78 nC
Part Status: Active
Current - Collector (Ic) (Max): 27 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 104 W
auf Bestellung 1100 Stücke:
Lieferzeit 10-14 Tag (e)
226+2.01 EUR
Mindestbestellmenge: 226
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HGT1S12N60C3 HGT1S12N60C3 Harris Corporation HRISS480-1.pdf?t.download=true&u=5oefqw Description: IGBT 600V 24A TO-262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 12A
Supplier Device Package: TO-262 (I2PAK)
Gate Charge: 62 nC
Part Status: Active
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 104 W
auf Bestellung 899 Stücke:
Lieferzeit 10-14 Tag (e)
207+2.21 EUR
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HGT1S12N60C3D HGT1S12N60C3D Harris Corporation HRISS481-1.pdf?t.download=true&u=5oefqw Description: IGBT 600V 24A TO-262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Supplier Device Package: TO-262 (I2PAK)
Gate Charge: 62 nC
Part Status: Active
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 104 W
auf Bestellung 2637 Stücke:
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HGT1S12N60C3DS HGT1S12N60C3DS Fairchild Semiconductor FAIRS45387-1.pdf?t.download=true&u=5oefqw Description: IGBT 600V 24A TO-263AB
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 32 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Supplier Device Package: TO-263AB
Gate Charge: 71 nC
Part Status: Active
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 104 W
auf Bestellung 565 Stücke:
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HGT1S12N60C3R HGT1S12N60C3R Harris Corporation HRISSC99-1.pdf?t.download=true&u=5oefqw Description: IGBT 600V 24A I2PAK
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 12A
Supplier Device Package: I2PAK (TO-262)
Td (on/off) @ 25°C: 37ns/120ns
Switching Energy: 400µJ (on), 340µJ (off)
Test Condition: 480V, 12A, 25Ohm, 15V
Gate Charge: 71 nC
Part Status: Active
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 104 W
auf Bestellung 1962 Stücke:
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HGT1S12N60C3S9AR4501 HGT1S12N60C3S9AR4501 Harris Corporation Description: 27A, 600V, UFS N-CHANNEL IGBT
Packaging: Bulk
Part Status: Active
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
202+2.25 EUR
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HGTB12N60D1C Harris Corporation HRISD027-3-42.pdf?t.download=true&u=5oefqw Description: IGBT 600V 12A TO-220-5
Packaging: Bulk
Package / Case: TO-220-5
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
Supplier Device Package: TO-220-5
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 75 W
auf Bestellung 498 Stücke:
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HGTG12N60A4D ON-Semicoductor hgt1s12n60a4ds-d.pdf Transistor IGBT ; 600V; 20V; 54A; 96A; 167W; 5.6V; 120nC; -55°C~150°C;   HGTG12N60A4D THGTG12n60a4d
Anzahl je Verpackung: 2 Stücke
auf Bestellung 30 Stücke:
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2+15.57 EUR
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HGTG12N60A4D ON-Semicoductor hgt1s12n60a4ds-d.pdf Transistor IGBT ; 600V; 20V; 54A; 96A; 167W; 5.6V; 120nC; -55°C~150°C;   HGTG12N60A4D THGTG12n60a4d
Anzahl je Verpackung: 2 Stücke
auf Bestellung 1 Stücke:
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2+15.57 EUR
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HGTG12N60C3D HGTG12N60C3D Harris Corporation HRISS472-1.pdf?t.download=true&u=5oefqw Description: IGBT 600V 24A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Supplier Device Package: TO-247
Switching Energy: 380µJ (on), 900µJ (off)
Gate Charge: 48 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 104 W
auf Bestellung 236 Stücke:
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67+6.79 EUR
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HGTG12N60D1D HGTG12N60D1D Harris Corporation HRISD027-3-46.pdf?t.download=true&u=5oefqw Description: IGBT 600V 21A TO-247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A
Supplier Device Package: TO-247
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 75 W
auf Bestellung 606 Stücke:
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47+9.78 EUR
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HGTG12N60DID HGTG12N60DID Harris Corporation Description: 24A, 600V, RUGGED, UFS SERIES N
Packaging: Bulk
Part Status: Active
auf Bestellung 15378 Stücke:
Lieferzeit 10-14 Tag (e)
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HGTP12N60A4 HGTP12N60A4 Fairchild Semiconductor FAIRS45383-1.pdf?t.download=true&u=5oefqw Description: IGBT 600V 54A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 17ns/96ns
Switching Energy: 55µJ (on), 50µJ (off)
Test Condition: 390V, 12A, 10Ohm, 15V
Gate Charge: 78 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 54 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 167 W
auf Bestellung 900 Stücke:
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HGTP12N60A4D HGTP12N60A4D Fairchild Semiconductor FAIR-S-A0000012348-1.pdf?t.download=true&u=5oefqw Description: IGBT 600V 54A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 17ns/96ns
Switching Energy: 55µJ (on), 50µJ (off)
Test Condition: 390V, 12A, 10Ohm, 15V
Gate Charge: 78 nC
Part Status: Active
Current - Collector (Ic) (Max): 54 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 167 W
auf Bestellung 76446 Stücke:
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175+2.6 EUR
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HGTP12N60C3R HGTP12N60C3R Harris Corporation HRISSC99-1.pdf?t.download=true&u=5oefqw Description: IGBT 600V 24A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 12A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 37ns/120ns
Switching Energy: 400µJ (on), 340µJ (off)
Test Condition: 480V, 12A, 25Ohm, 15V
Gate Charge: 71 nC
Part Status: Active
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 104 W
auf Bestellung 2724 Stücke:
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195+2.33 EUR
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SIHA12N60E-E3 SIHA12N60E-E3 Vishay Siliconix siha12n60e.pdf Description: MOSFET N-CH 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 937 pF @ 100 V
auf Bestellung 914 Stücke:
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5+4.07 EUR
50+2.33 EUR
100+2.22 EUR
500+1.8 EUR
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SIHA12N60E-E3 SIHA12N60E-E3 Vishay / Siliconix siha12n60e.pdf MOSFETs 600V Vds 30V Vgs TO-220 FULLPAK
auf Bestellung 496 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.4 EUR
10+2.46 EUR
100+2.32 EUR
500+1.9 EUR
1000+1.8 EUR
2000+1.74 EUR
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SIHA12N60E-GE3 SIHA12N60E-GE3 Vishay Siliconix siha12n60e.pdf Description: N-CHANNEL 600V
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 937 pF @ 100 V
auf Bestellung 998 Stücke:
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4+4.91 EUR
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SIHB12N60E-GE3 SIHB12N60E-GE3 Vishay / Siliconix sihb12n60.pdf MOSFETs 600V Vds 30V Vgs D2PAK (TO-263)
auf Bestellung 5103 Stücke:
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1+4.54 EUR
10+2.94 EUR
100+2.09 EUR
500+1.76 EUR
1000+1.71 EUR
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SIHF12N60E-E3 SIHF12N60E-E3 Vishay / Siliconix sihf12n6.pdf MOSFETs 600V Vds 30V Vgs TO-220 FULLPAK
auf Bestellung 689 Stücke:
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1+2.85 EUR
10+2.6 EUR
100+2.46 EUR
500+2.24 EUR
1000+1.9 EUR
2000+1.87 EUR
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SIHF12N60E-GE3 SIHF12N60E-GE3 Vishay / Siliconix sihf12n6.pdf MOSFETs 600V Vds 30V Vgs TO-220 FULLPAK
auf Bestellung 6587 Stücke:
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1+4.65 EUR
10+3.63 EUR
100+2.53 EUR
500+2.08 EUR
1000+2.04 EUR
2000+2.02 EUR
10000+1.99 EUR
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SIHF12N60E-GE3 SIHF12N60E-GE3 Vishay Siliconix sihf12n6.pdf Description: MOSFET N-CH 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 937 pF @ 100 V
auf Bestellung 699 Stücke:
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4+4.44 EUR
10+3.36 EUR
100+2.3 EUR
500+1.97 EUR
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SIHP12N60E-BE3 SIHP12N60E-BE3 Vishay Siliconix sihp12n6.pdf Description: MOSFET N-CH 600V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 937 pF @ 100 V
auf Bestellung 10 Stücke:
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5+4.35 EUR
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SIHP12N60E-BE3 SIHP12N60E-BE3 Vishay sihp12n6.pdf MOSFETs TO220 600V 12A N-CH MOSFET
auf Bestellung 3914 Stücke:
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SIHP12N60E-E3 SIHP12N60E-E3 Vishay / Siliconix sihp12n6.pdf MOSFETs 600V Vds 30V Vgs TO-220AB
auf Bestellung 2766 Stücke:
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2+2.71 EUR
10+2.46 EUR
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500+2.13 EUR
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SIHP12N60E-GE3 SIHP12N60E-GE3 Vishay / Siliconix sihp12n6.pdf MOSFETs 600V Vds 30V Vgs TO-220AB
auf Bestellung 1281 Stücke:
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1+5.46 EUR
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100+2.73 EUR
500+2.29 EUR
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2000+1.8 EUR
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STB12N60DM2AG STB12N60DM2AG STMicroelectronics MOSFETs Automotive-grade N-channel 600 V, 380 mOhm typ., 10 A MDmesh DM2 Power MOSFET in a D2PAK package
auf Bestellung 397 Stücke:
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10+3.57 EUR
100+2.73 EUR
500+2.29 EUR
1000+2.15 EUR
2000+2.08 EUR
10000+2.06 EUR
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STD12N60DM2AG STD12N60DM2AG STMicroelectronics std12n60dm2ag.pdf MOSFETs Automotive-grade N-channel 600 V, 370 mOhm typ 10 A MDmesh DM2 Power MOSFET
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Lieferzeit 10-14 Tag (e)
1+5.16 EUR
10+3.34 EUR
100+2.46 EUR
500+2.06 EUR
1000+1.95 EUR
2500+1.62 EUR
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STD12N60DM6 STD12N60DM6 STMicroelectronics std12n60dm6.pdf MOSFETs N-channel 600 V, 345 mOhm typ., 10 A MDmesh DM6 Power MOSFET
auf Bestellung 2369 Stücke:
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1+3.31 EUR
10+2.64 EUR
100+1.9 EUR
500+1.65 EUR
1000+1.52 EUR
2500+1.4 EUR
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STD12N60DM6 STD12N60DM6 STMicroelectronics std12n60dm6.pdf Description: MOSFET N-CH 600V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 508 pF @ 100 V
auf Bestellung 2357 Stücke:
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6+3.17 EUR
10+2.52 EUR
100+1.8 EUR
500+1.57 EUR
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STD12N60M2 STD12N60M2 STMicroelectronics std12n60m2.pdf Description: MOSFET N-CHANNEL 600V 9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 100 V
auf Bestellung 2500 Stücke:
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2500+0.83 EUR
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STD12N60M2 STD12N60M2 STMicroelectronics std12n60m2.pdf Description: MOSFET N-CHANNEL 600V 9A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 100 V
auf Bestellung 7435 Stücke:
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6+2.96 EUR
10+1.88 EUR
100+1.27 EUR
500+1 EUR
1000+0.94 EUR
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STF12N60M2 STF12N60M2 STMicroelectronics en.DM00187616.pdf Description: MOSFET N-CH 600V 9A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 100 V
auf Bestellung 870 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.8 EUR
50+1.31 EUR
100+1.25 EUR
500+0.99 EUR
Mindestbestellmenge: 7
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STF12N60M2 STF12N60M2 STMicroelectronics en.DM00187616.pdf MOSFETs N-channel 600 V, 0.395 Ohm typ 9 A MDmesh M2 Power MOSFET
auf Bestellung 2093 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.12 EUR
10+1.99 EUR
100+1.32 EUR
500+1.1 EUR
1000+0.93 EUR
2000+0.87 EUR
5000+0.79 EUR
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HGTG12N60A4D
Produktcode: 31158
zu Favoriten hinzufügen Lieblingsprodukt

hgt1s12n60a4ds-d.pdf
HGTG12N60A4D
Hersteller: Fairchild
Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247
Vces: 600 V
Vce: 2,7 V
Ic 25: 54 A
Ic 100: 23 A
Pd 25: 167 W
td(on)/td(off) 100-150 Grad: 17/96
auf Bestellung 4 Stück:
Lieferzeit 21-28 Tag (e)
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HGTP12N60C3D
Produktcode: 122684
zu Favoriten hinzufügen Lieblingsprodukt

hgtp12n60c3d-1010383.pdf
HGTP12N60C3D
Hersteller: Fairchild
Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-220
Vces: 600 V
Vce: 1,65 V
Ic 25: 24 A
Ic 100: 12 А
Pd 25: 104 W
td(on)/td(off) 100-150 Grad: 28/270
auf Bestellung 19 Stück:
Lieferzeit 21-28 Tag (e)
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12N60
auf Bestellung 4653 Stücke:
Lieferzeit 21-28 Tag (e)
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AOT12N60 AOT12N60.pdf
Hersteller: ALPHA&OMEGA
Transistor N-Channel MOSFET; 600V; 30V; 550mOhm; 12A; 278W; -55°C ~ 150°C; AOT12N60 TAOT12n60
Anzahl je Verpackung: 10 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
10+2.91 EUR
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AOTF12N60 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A3F356328B498A50&compId=AOTF12N60-DTE.pdf?ci_sign=45ce98480754c09b78461a7fa6ed858ab96e6d3b
AOTF12N60
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.7A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.7A
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 40nC
Kind of channel: enhancement
auf Bestellung 622 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.3 EUR
39+1.86 EUR
44+1.66 EUR
49+1.49 EUR
50+1.43 EUR
54+1.33 EUR
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AOTF12N60 TO220F.pdf
Hersteller: ALPHA&OMEGA
Transistor N-Channel MOSFET; 600V; 30V; 550mOhm; 12A; 50W; -55°C ~ 150°C; AOTF12N60 TAOTF12n60
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
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Anzahl Preis
10+2.82 EUR
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AOTF12N60 pVersion=0046&contRep=ZT&docId=005056AB752F1ED6A3F356328B498A50&compId=AOTF12N60-DTE.pdf?ci_sign=45ce98480754c09b78461a7fa6ed858ab96e6d3b
AOTF12N60
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 9.7A; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9.7A
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.55Ω
Mounting: THT
Gate charge: 40nC
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 622 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
32+2.3 EUR
39+1.86 EUR
44+1.66 EUR
49+1.49 EUR
50+1.43 EUR
54+1.33 EUR
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AOTF12N60FD AOTF12N60FD.pdf
Hersteller: ALPHA&OMEGA
Transistor N-Channel MOSFET; 600V; 30V; 650mOhm; 12A; 50W; -55°C ~ 150°C; AOTF12N60FD TAOTF12n60fd
Anzahl je Verpackung: 10 Stücke
auf Bestellung 22 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
10+2.82 EUR
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AOTF12N60FD AOTF12N60FD.pdf
Hersteller: ALPHA&OMEGA
Transistor N-Channel MOSFET; 600V; 30V; 650mOhm; 12A; 50W; -55°C ~ 150°C; AOTF12N60FD TAOTF12n60fd
Anzahl je Verpackung: 10 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
10+2.82 EUR
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AOTF12N60FD AOTF12N60FD.pdf
Hersteller: ALPHA&OMEGA
Transistor N-Channel MOSFET; 600V; 30V; 650mOhm; 12A; 50W; -55°C ~ 150°C; AOTF12N60FD TAOTF12n60fd
Anzahl je Verpackung: 10 Stücke
auf Bestellung 28 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
10+2.82 EUR
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AOTF12N60L AOT12N60.pdf
AOTF12N60L
Hersteller: Alpha & Omega Semiconductor Inc.
Description: MOSFET N-CH 600V 12A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 550mOhm @ 6A, 10V
Power Dissipation (Max): 50W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2100 pF @ 25 V
auf Bestellung 239 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.64 EUR
50+1.78 EUR
100+1.6 EUR
Mindestbestellmenge: 5
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FDPF12N60NZ FDPF12N60NZ-D.PDF
FDPF12N60NZ
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.2A; 240W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.2A
Power dissipation: 240W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 204 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
24+2.99 EUR
40+1.83 EUR
42+1.73 EUR
50+1.7 EUR
100+1.66 EUR
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FDPF12N60NZ FDPF12N60NZ-D.PDF
FDPF12N60NZ
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 7.2A; 240W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.2A
Power dissipation: 240W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.65Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 204 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
24+2.99 EUR
40+1.83 EUR
42+1.73 EUR
50+1.7 EUR
100+1.66 EUR
Mindestbestellmenge: 24
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FDPF12N60NZ FDPF12N60NZ-D.PDF
FDPF12N60NZ
Hersteller: onsemi
Description: MOSFET N-CH 600V 12A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1676 pF @ 25 V
auf Bestellung 453 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.82 EUR
50+2.25 EUR
100+2.11 EUR
Mindestbestellmenge: 5
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FDPF12N60NZ FDPF12N60NZ-D.PDF
FDPF12N60NZ
Hersteller: onsemi / Fairchild
MOSFETs UNIFET2 600V N-CH MOSFET SINGLE GAGE
auf Bestellung 2401 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.21 EUR
10+2.32 EUR
100+2.16 EUR
500+1.88 EUR
1000+1.74 EUR
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FQA12N60 FAIRS42369-1.pdf?t.download=true&u=5oefqw
FQA12N60
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 12A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 6A, 10V
Power Dissipation (Max): 240W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
auf Bestellung 9750 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
201+2.27 EUR
Mindestbestellmenge: 201
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FQB12N60TM FAIRS19087-1.pdf?t.download=true&u=5oefqw
FQB12N60TM
Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 5.3A, 10V
Power Dissipation (Max): 3.13W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
auf Bestellung 6990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
229+1.98 EUR
Mindestbestellmenge: 229
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FQI12N60CTU FAIRS25683-1.pdf?t.download=true&u=5oefqw
FQI12N60CTU
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 12A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 3.13W (Ta), 225W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 25 V
auf Bestellung 2882 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
226+2.01 EUR
Mindestbestellmenge: 226
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FQI12N60TU FAIRS19087-1.pdf?t.download=true&u=5oefqw
FQI12N60TU
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 10.5A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 5.3A, 10V
Power Dissipation (Max): 3.13W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
auf Bestellung 627 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
224+2.03 EUR
Mindestbestellmenge: 224
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FQP12N60 FAIRS07073-1.pdf?t.download=true&u=5oefqw
FQP12N60
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 10.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 5.3A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
auf Bestellung 9664 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
182+2.5 EUR
Mindestbestellmenge: 182
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FQP12N60C FAIRS46957-1.pdf?t.download=true&u=5oefqw
FQP12N60C
Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 225W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2290 pF @ 25 V
auf Bestellung 4340 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
176+2.59 EUR
Mindestbestellmenge: 176
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FQPF12N60 FAIRS17575-1.pdf?t.download=true&u=5oefqw
FQPF12N60
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 5.8A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 2.9A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
auf Bestellung 55453 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
110+4.14 EUR
Mindestbestellmenge: 110
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FQPF12N60T FAIRS17575-1.pdf?t.download=true&u=5oefqw
FQPF12N60T
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 5.8A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 700mOhm @ 2.9A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1900 pF @ 25 V
auf Bestellung 1336 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
235+1.94 EUR
Mindestbestellmenge: 235
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HGT1S12N60A4DS FAIR-S-A0000012348-1.pdf?t.download=true&u=5oefqw
HGT1S12N60A4DS
Hersteller: Fairchild Semiconductor
Description: IGBT 600V 54A TO-263AB
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: TO-263AB
Td (on/off) @ 25°C: 17ns/96ns
Switching Energy: 55µJ (on), 50µJ (off)
Test Condition: 390V, 12A, 10Ohm, 15V
Gate Charge: 120 nC
Current - Collector (Ic) (Max): 54 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 167 W
auf Bestellung 2395 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
86+5.29 EUR
Mindestbestellmenge: 86
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HGT1S12N60B3 HRISSC96-1.pdf?t.download=true&u=5oefqw
HGT1S12N60B3
Hersteller: Harris Corporation
Description: IGBT 600V 27A TO-262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: TO-262 (I2PAK)
Td (on/off) @ 25°C: 26ns/150ns
Switching Energy: 304µJ (on), 250µJ (off)
Test Condition: 480V, 12A, 25Ohm, 15V
Gate Charge: 68 nC
Part Status: Active
Current - Collector (Ic) (Max): 27 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 104 W
auf Bestellung 917 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
181+2.51 EUR
Mindestbestellmenge: 181
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HGT1S12N60B3D HRISSD10-1.pdf?t.download=true&u=5oefqw
HGT1S12N60B3D
Hersteller: Harris Corporation
Description: IGBT 600V 27A I2PAK
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: I2PAK (TO-262)
Td (on/off) @ 25°C: 26ns/150ns
Switching Energy: 304µJ (on), 250µJ (off)
Test Condition: 480V, 12A, 25Ohm, 15V
Gate Charge: 78 nC
Part Status: Active
Current - Collector (Ic) (Max): 27 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 104 W
auf Bestellung 400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
181+2.51 EUR
Mindestbestellmenge: 181
Im Einkaufswagen  Stück im Wert von  UAH
HGT1S12N60B3DS HRISSD10-1.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: IGBT 600V 27A TO-263AB
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 12A
Supplier Device Package: TO-263AB
Td (on/off) @ 25°C: 26ns/150ns
Switching Energy: 304µJ (on), 250µJ (off)
Test Condition: 480V, 12A, 25Ohm, 15V
Gate Charge: 78 nC
Part Status: Active
Current - Collector (Ic) (Max): 27 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 110 A
Power - Max: 104 W
auf Bestellung 1100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
226+2.01 EUR
Mindestbestellmenge: 226
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HGT1S12N60C3 HRISS480-1.pdf?t.download=true&u=5oefqw
HGT1S12N60C3
Hersteller: Harris Corporation
Description: IGBT 600V 24A TO-262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 12A
Supplier Device Package: TO-262 (I2PAK)
Gate Charge: 62 nC
Part Status: Active
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 104 W
auf Bestellung 899 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
207+2.21 EUR
Mindestbestellmenge: 207
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HGT1S12N60C3D HRISS481-1.pdf?t.download=true&u=5oefqw
HGT1S12N60C3D
Hersteller: Harris Corporation
Description: IGBT 600V 24A TO-262
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 40 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Supplier Device Package: TO-262 (I2PAK)
Gate Charge: 62 nC
Part Status: Active
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 104 W
auf Bestellung 2637 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
185+2.45 EUR
Mindestbestellmenge: 185
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HGT1S12N60C3DS FAIRS45387-1.pdf?t.download=true&u=5oefqw
HGT1S12N60C3DS
Hersteller: Fairchild Semiconductor
Description: IGBT 600V 24A TO-263AB
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 32 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Supplier Device Package: TO-263AB
Gate Charge: 71 nC
Part Status: Active
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 104 W
auf Bestellung 565 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
152+2.99 EUR
Mindestbestellmenge: 152
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HGT1S12N60C3R HRISSC99-1.pdf?t.download=true&u=5oefqw
HGT1S12N60C3R
Hersteller: Harris Corporation
Description: IGBT 600V 24A I2PAK
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 12A
Supplier Device Package: I2PAK (TO-262)
Td (on/off) @ 25°C: 37ns/120ns
Switching Energy: 400µJ (on), 340µJ (off)
Test Condition: 480V, 12A, 25Ohm, 15V
Gate Charge: 71 nC
Part Status: Active
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 104 W
auf Bestellung 1962 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
189+2.4 EUR
Mindestbestellmenge: 189
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HGT1S12N60C3S9AR4501
HGT1S12N60C3S9AR4501
Hersteller: Harris Corporation
Description: 27A, 600V, UFS N-CHANNEL IGBT
Packaging: Bulk
Part Status: Active
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
202+2.25 EUR
Mindestbestellmenge: 202
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HGTB12N60D1C HRISD027-3-42.pdf?t.download=true&u=5oefqw
Hersteller: Harris Corporation
Description: IGBT 600V 12A TO-220-5
Packaging: Bulk
Package / Case: TO-220-5
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 10A
Supplier Device Package: TO-220-5
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 40 A
Power - Max: 75 W
auf Bestellung 498 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
82+5.6 EUR
Mindestbestellmenge: 82
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HGTG12N60A4D hgt1s12n60a4ds-d.pdf
Hersteller: ON-Semicoductor
Transistor IGBT ; 600V; 20V; 54A; 96A; 167W; 5.6V; 120nC; -55°C~150°C;   HGTG12N60A4D THGTG12n60a4d
Anzahl je Verpackung: 2 Stücke
auf Bestellung 30 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
2+15.57 EUR
Mindestbestellmenge: 2
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HGTG12N60A4D hgt1s12n60a4ds-d.pdf
Hersteller: ON-Semicoductor
Transistor IGBT ; 600V; 20V; 54A; 96A; 167W; 5.6V; 120nC; -55°C~150°C;   HGTG12N60A4D THGTG12n60a4d
Anzahl je Verpackung: 2 Stücke
auf Bestellung 1 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
2+15.57 EUR
Mindestbestellmenge: 2
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HGTG12N60C3D HRISS472-1.pdf?t.download=true&u=5oefqw
HGTG12N60C3D
Hersteller: Harris Corporation
Description: IGBT 600V 24A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 15A
Supplier Device Package: TO-247
Switching Energy: 380µJ (on), 900µJ (off)
Gate Charge: 48 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 104 W
auf Bestellung 236 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+6.79 EUR
Mindestbestellmenge: 67
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HGTG12N60D1D HRISD027-3-46.pdf?t.download=true&u=5oefqw
HGTG12N60D1D
Hersteller: Harris Corporation
Description: IGBT 600V 21A TO-247
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 12A
Supplier Device Package: TO-247
Gate Charge: 70 nC
Part Status: Active
Current - Collector (Ic) (Max): 21 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 75 W
auf Bestellung 606 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
47+9.78 EUR
Mindestbestellmenge: 47
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HGTG12N60DID
HGTG12N60DID
Hersteller: Harris Corporation
Description: 24A, 600V, RUGGED, UFS SERIES N
Packaging: Bulk
Part Status: Active
auf Bestellung 15378 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
94+4.87 EUR
Mindestbestellmenge: 94
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HGTP12N60A4 FAIRS45383-1.pdf?t.download=true&u=5oefqw
HGTP12N60A4
Hersteller: Fairchild Semiconductor
Description: IGBT 600V 54A TO-220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 17ns/96ns
Switching Energy: 55µJ (on), 50µJ (off)
Test Condition: 390V, 12A, 10Ohm, 15V
Gate Charge: 78 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 54 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 167 W
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
342+1.33 EUR
Mindestbestellmenge: 342
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HGTP12N60A4D FAIR-S-A0000012348-1.pdf?t.download=true&u=5oefqw
HGTP12N60A4D
Hersteller: Fairchild Semiconductor
Description: IGBT 600V 54A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 30 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 12A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 17ns/96ns
Switching Energy: 55µJ (on), 50µJ (off)
Test Condition: 390V, 12A, 10Ohm, 15V
Gate Charge: 78 nC
Part Status: Active
Current - Collector (Ic) (Max): 54 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 96 A
Power - Max: 167 W
auf Bestellung 76446 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
175+2.6 EUR
Mindestbestellmenge: 175
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HGTP12N60C3R HRISSC99-1.pdf?t.download=true&u=5oefqw
HGTP12N60C3R
Hersteller: Harris Corporation
Description: IGBT 600V 24A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 37 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 12A
Supplier Device Package: TO-220-3
Td (on/off) @ 25°C: 37ns/120ns
Switching Energy: 400µJ (on), 340µJ (off)
Test Condition: 480V, 12A, 25Ohm, 15V
Gate Charge: 71 nC
Part Status: Active
Current - Collector (Ic) (Max): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 48 A
Power - Max: 104 W
auf Bestellung 2724 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
195+2.33 EUR
Mindestbestellmenge: 195
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SIHA12N60E-E3 siha12n60e.pdf
SIHA12N60E-E3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 937 pF @ 100 V
auf Bestellung 914 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.07 EUR
50+2.33 EUR
100+2.22 EUR
500+1.8 EUR
Mindestbestellmenge: 5
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SIHA12N60E-E3 siha12n60e.pdf
SIHA12N60E-E3
Hersteller: Vishay / Siliconix
MOSFETs 600V Vds 30V Vgs TO-220 FULLPAK
auf Bestellung 496 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.4 EUR
10+2.46 EUR
100+2.32 EUR
500+1.9 EUR
1000+1.8 EUR
2000+1.74 EUR
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SIHA12N60E-GE3 siha12n60e.pdf
SIHA12N60E-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 600V
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 937 pF @ 100 V
auf Bestellung 998 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.91 EUR
Mindestbestellmenge: 4
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SIHB12N60E-GE3 sihb12n60.pdf
SIHB12N60E-GE3
Hersteller: Vishay / Siliconix
MOSFETs 600V Vds 30V Vgs D2PAK (TO-263)
auf Bestellung 5103 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.54 EUR
10+2.94 EUR
100+2.09 EUR
500+1.76 EUR
1000+1.71 EUR
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SIHF12N60E-E3 sihf12n6.pdf
SIHF12N60E-E3
Hersteller: Vishay / Siliconix
MOSFETs 600V Vds 30V Vgs TO-220 FULLPAK
auf Bestellung 689 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+2.85 EUR
10+2.6 EUR
100+2.46 EUR
500+2.24 EUR
1000+1.9 EUR
2000+1.87 EUR
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SIHF12N60E-GE3 sihf12n6.pdf
SIHF12N60E-GE3
Hersteller: Vishay / Siliconix
MOSFETs 600V Vds 30V Vgs TO-220 FULLPAK
auf Bestellung 6587 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.65 EUR
10+3.63 EUR
100+2.53 EUR
500+2.08 EUR
1000+2.04 EUR
2000+2.02 EUR
10000+1.99 EUR
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SIHF12N60E-GE3 sihf12n6.pdf
SIHF12N60E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 12A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 33W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 937 pF @ 100 V
auf Bestellung 699 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.44 EUR
10+3.36 EUR
100+2.3 EUR
500+1.97 EUR
Mindestbestellmenge: 4
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SIHP12N60E-BE3 sihp12n6.pdf
SIHP12N60E-BE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 12A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 6A, 10V
Power Dissipation (Max): 147W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 937 pF @ 100 V
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.35 EUR
Mindestbestellmenge: 5
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SIHP12N60E-BE3 sihp12n6.pdf
SIHP12N60E-BE3
Hersteller: Vishay
MOSFETs TO220 600V 12A N-CH MOSFET
auf Bestellung 3914 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.54 EUR
10+2.59 EUR
100+2.55 EUR
500+2.09 EUR
1000+1.87 EUR
2000+1.83 EUR
5000+1.8 EUR
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SIHP12N60E-E3 sihp12n6.pdf
SIHP12N60E-E3
Hersteller: Vishay / Siliconix
MOSFETs 600V Vds 30V Vgs TO-220AB
auf Bestellung 2766 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.71 EUR
10+2.46 EUR
100+2.36 EUR
500+2.13 EUR
1000+1.88 EUR
2000+1.83 EUR
5000+1.8 EUR
Mindestbestellmenge: 2
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SIHP12N60E-GE3 sihp12n6.pdf
SIHP12N60E-GE3
Hersteller: Vishay / Siliconix
MOSFETs 600V Vds 30V Vgs TO-220AB
auf Bestellung 1281 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.46 EUR
10+3.56 EUR
100+2.73 EUR
500+2.29 EUR
1000+1.97 EUR
2000+1.8 EUR
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STB12N60DM2AG
STB12N60DM2AG
Hersteller: STMicroelectronics
MOSFETs Automotive-grade N-channel 600 V, 380 mOhm typ., 10 A MDmesh DM2 Power MOSFET in a D2PAK package
auf Bestellung 397 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.47 EUR
10+3.57 EUR
100+2.73 EUR
500+2.29 EUR
1000+2.15 EUR
2000+2.08 EUR
10000+2.06 EUR
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STD12N60DM2AG std12n60dm2ag.pdf
STD12N60DM2AG
Hersteller: STMicroelectronics
MOSFETs Automotive-grade N-channel 600 V, 370 mOhm typ 10 A MDmesh DM2 Power MOSFET
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.16 EUR
10+3.34 EUR
100+2.46 EUR
500+2.06 EUR
1000+1.95 EUR
2500+1.62 EUR
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STD12N60DM6 std12n60dm6.pdf
STD12N60DM6
Hersteller: STMicroelectronics
MOSFETs N-channel 600 V, 345 mOhm typ., 10 A MDmesh DM6 Power MOSFET
auf Bestellung 2369 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.31 EUR
10+2.64 EUR
100+1.9 EUR
500+1.65 EUR
1000+1.52 EUR
2500+1.4 EUR
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STD12N60DM6 std12n60dm6.pdf
STD12N60DM6
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 5A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Part Status: Active
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 508 pF @ 100 V
auf Bestellung 2357 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.17 EUR
10+2.52 EUR
100+1.8 EUR
500+1.57 EUR
Mindestbestellmenge: 6
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STD12N60M2 std12n60m2.pdf
STD12N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CHANNEL 600V 9A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 100 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.83 EUR
Mindestbestellmenge: 2500
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STD12N60M2 std12n60m2.pdf
STD12N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CHANNEL 600V 9A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
Power Dissipation (Max): 85W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 100 V
auf Bestellung 7435 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.96 EUR
10+1.88 EUR
100+1.27 EUR
500+1 EUR
1000+0.94 EUR
Mindestbestellmenge: 6
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STF12N60M2 en.DM00187616.pdf
STF12N60M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 600V 9A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 538 pF @ 100 V
auf Bestellung 870 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.8 EUR
50+1.31 EUR
100+1.25 EUR
500+0.99 EUR
Mindestbestellmenge: 7
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STF12N60M2 en.DM00187616.pdf
STF12N60M2
Hersteller: STMicroelectronics
MOSFETs N-channel 600 V, 0.395 Ohm typ 9 A MDmesh M2 Power MOSFET
auf Bestellung 2093 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+3.12 EUR
10+1.99 EUR
100+1.32 EUR
500+1.1 EUR
1000+0.93 EUR
2000+0.87 EUR
5000+0.79 EUR
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