Suchergebnisse für "44h11" : > 60

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B39871B3744H110 B39871B3744H110 Qualcomm (RF front-end (RFFE) filters) B39871B3744H110.pdf Description: FILTER SAW 868.3MHZ 6-SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.118" L x 0.118" W (3.00mm x 3.00mm)
Mounting Type: Surface Mount
Insertion Loss: 3dB
Bandwidth: 600kHz
Applications: Remote Control
Frequency - Center: 868.3MHz
Ratings: AEC-Q200
Height (Max): 0.039" (1.00mm)
Part Status: Active
auf Bestellung 14880 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.29 EUR
10+1.88 EUR
25+1.73 EUR
50+1.63 EUR
100+1.53 EUR
250+1.41 EUR
500+1.33 EUR
1000+1.25 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
B39871B3744H110 B39871B3744H110 Qualcomm (RF front-end (RFFE) filters) B39871B3744H110.pdf Description: FILTER SAW 868.3MHZ 6-SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.118" L x 0.118" W (3.00mm x 3.00mm)
Mounting Type: Surface Mount
Insertion Loss: 3dB
Bandwidth: 600kHz
Applications: Remote Control
Frequency - Center: 868.3MHz
Ratings: AEC-Q200
Height (Max): 0.039" (1.00mm)
Part Status: Active
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
9000+1.03 EUR
Mindestbestellmenge: 9000
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B39871B3744H110 B39871B3744H110 RF360 Qualcomm_B3744-3463759.pdf Signal Conditioning 3 mm x 3 mm x 1 mm - 40 C to + 125 C 868.3 MHz 6 V 50 Ohms SRD / ISM: 869 MHz
auf Bestellung 16952 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.36 EUR
10+1.94 EUR
25+1.68 EUR
100+1.58 EUR
250+1.45 EUR
500+1.36 EUR
1000+1.28 EUR
Mindestbestellmenge: 2
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D44H11 D44H11 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD01EA2486EE469&compId=D44H11.pdf?ci_sign=f1e8a73b47e1c17e85ceb5fbe8bf1a989e765422 Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 50MHz
auf Bestellung 102 Stücke:
Lieferzeit 14-21 Tag (e)
41+1.76 EUR
78+0.92 EUR
92+0.78 EUR
102+0.7 EUR
Mindestbestellmenge: 41
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D44H11 ST en.CD00000942.pdf d44h-d.pdf Tranzystor NPN; 60; 1,67W; 80V; 10A; 50MHz; -55°C ~ 150°C; Odpowiednik: KSE44H11TU; D44H11; D44H11TU; D44H11G; D44H11 TD44H11 STM
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
20+1.66 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
D44H11 D44H11 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD01EA2486EE469&compId=D44H11.pdf?ci_sign=f1e8a73b47e1c17e85ceb5fbe8bf1a989e765422 Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 50MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 102 Stücke:
Lieferzeit 7-14 Tag (e)
41+1.76 EUR
78+0.92 EUR
92+0.78 EUR
102+0.7 EUR
Mindestbestellmenge: 41
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D44H11 D44H11 STMicroelectronics en.CD00000942.pdf Description: TRANS NPN 80V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 50 W
auf Bestellung 998 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.59 EUR
50+1.23 EUR
100+1.1 EUR
500+0.87 EUR
Mindestbestellmenge: 7
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D44H11 D44H11 STMicroelectronics en.CD00000942.pdf d44h-d.pdf Bipolar Transistors - BJT NPN Gen Pur Switch
auf Bestellung 16017 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.5 EUR
10+1.58 EUR
100+1.06 EUR
500+0.87 EUR
1000+0.76 EUR
2000+0.7 EUR
5000+0.64 EUR
Mindestbestellmenge: 2
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D44H11G D44H11G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD021839399A469&compId=D44H8G.PDF?ci_sign=78103bae26e64bde0ef0657581f2d5127fad7bb1 Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Current gain: 40
Mounting: THT
Kind of package: tube
Frequency: 40MHz
auf Bestellung 285 Stücke:
Lieferzeit 14-21 Tag (e)
49+1.49 EUR
80+0.9 EUR
91+0.79 EUR
97+0.74 EUR
250+0.72 EUR
Mindestbestellmenge: 49
Im Einkaufswagen  Stück im Wert von  UAH
D44H11G ON-Semicoductor d44h-d.pdf Transistor NPN; Bipolar; 80V; 20V; 50MHz; 10A; 2W; -55°C~150°C; D44H11G TD44H11G ONS
Anzahl je Verpackung: 10 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
20+2.34 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
D44H11G D44H11G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD021839399A469&compId=D44H8G.PDF?ci_sign=78103bae26e64bde0ef0657581f2d5127fad7bb1 Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Current gain: 40
Mounting: THT
Kind of package: tube
Frequency: 40MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 285 Stücke:
Lieferzeit 7-14 Tag (e)
49+1.49 EUR
80+0.9 EUR
91+0.79 EUR
97+0.74 EUR
250+0.72 EUR
Mindestbestellmenge: 49
Im Einkaufswagen  Stück im Wert von  UAH
D44H11G D44H11G onsemi d44h-d.pdf Description: TRANS NPN 80V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
auf Bestellung 7044 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.52 EUR
50+1.19 EUR
100+1.06 EUR
500+0.83 EUR
1000+0.76 EUR
2000+0.7 EUR
5000+0.63 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
D44H11G D44H11G onsemi D44H_D-1803404.pdf Bipolar Transistors - BJT 10A 80V 50W NPN
auf Bestellung 6588 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.24 EUR
10+1.56 EUR
50+1.22 EUR
100+1.01 EUR
250+1 EUR
500+0.77 EUR
1000+0.71 EUR
Mindestbestellmenge: 2
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DIV44H11-35PN[V001] TE Connectivity Category: Automotive connectors
Description: Connector: circular
Type of connector: circular
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
1+201.57 EUR
3+178.06 EUR
Im Einkaufswagen  Stück im Wert von  UAH
KSE44H11 KSE44H11 onsemi KSE44H.pdf Description: TRANS NPN 80V 10A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-220-3
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.67 W
auf Bestellung 1200 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.59 EUR
11+1.64 EUR
200+0.99 EUR
600+0.85 EUR
1000+0.79 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
KSE44H11TU ON-Semicoductor KSE44H.pdf Tranzystor NPN; 60; 1,67W; 80V; 10A; 50MHz; -55°C ~ 150°C; Odpowiednik: KSE44H11TU; D44H11; D44H11TU; D44H11G; KSE44H11TU TD44H11
Anzahl je Verpackung: 7 Stücke
auf Bestellung 7 Stücke:
Lieferzeit 7-14 Tag (e)
7+5.52 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
KSH44H11ITU KSH44H11ITU onsemi KSH44H11%28I%29.pdf Description: TRANS NPN 80V 8A IPAK
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 50MHz
Supplier Device Package: IPAK
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
auf Bestellung 9272 Stücke:
Lieferzeit 10-14 Tag (e)
624+0.74 EUR
Mindestbestellmenge: 624
Im Einkaufswagen  Stück im Wert von  UAH
MJB44H11G ON-Semicoductor mjb44h11-d.pdf NPN 10A 80V 50W MJB44H11G, MJB44H11T4G, NJVMJB44H11T4G MJB44H11G TD44H11 d2pak
Anzahl je Verpackung: 25 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)
25+1.79 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
MJB44H11G MJB44H11G onsemi mjb44h11-d.pdf Description: TRANS NPN 80V 10A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 50MHz
Supplier Device Package: D2PAK
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
auf Bestellung 130 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.17 EUR
50+1.53 EUR
100+1.37 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
MJB44H11G MJB44H11G onsemi MJB44H11_D-1811454.pdf Bipolar Transistors - BJT 8A 80V 50W NPN
auf Bestellung 2077 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.55 EUR
10+2.06 EUR
50+1.57 EUR
100+1.4 EUR
500+1.24 EUR
1000+1.01 EUR
3000+0.99 EUR
Mindestbestellmenge: 2
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MJB44H11T4-A MJB44H11T4-A STMicroelectronics en.DM00116400.pdf Digital Transistors Automotive-grade low volt NPN power transistor
auf Bestellung 3262 Stücke:
Lieferzeit 10-14 Tag (e)
1+2.89 EUR
10+1.83 EUR
100+1.22 EUR
500+0.96 EUR
1000+0.88 EUR
2000+0.77 EUR
5000+0.73 EUR
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MJB44H11T4-A MJB44H11T4-A STMicroelectronics en.DM00116400.pdf Description: TRANS NPN 80V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 50 W
Qualification: AEC-Q101
auf Bestellung 3238 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.8 EUR
10+1.79 EUR
100+1.2 EUR
500+0.95 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
MJB44H11T4-A MJB44H11T4-A STMicroelectronics en.DM00116400.pdf Description: TRANS NPN 80V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 50 W
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+0.87 EUR
2000+0.8 EUR
3000+0.77 EUR
Mindestbestellmenge: 1000
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MJB44H11T4G MJB44H11T4G onsemi mjb44h11-d.pdf Description: TRANS NPN 80V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 50MHz
Supplier Device Package: D2PAK
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
auf Bestellung 827 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.17 EUR
10+2.03 EUR
100+1.37 EUR
Mindestbestellmenge: 6
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MJB44H11T4G MJB44H11T4G onsemi MJB44H11_D-1811454.pdf Bipolar Transistors - BJT 8A 80V 50W NPN
auf Bestellung 914 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.8 EUR
10+1.97 EUR
100+1.41 EUR
500+1.06 EUR
800+0.99 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
MJB44H11T4G MJB44H11T4G onsemi mjb44h11-d.pdf Description: TRANS NPN 80V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 50MHz
Supplier Device Package: D2PAK
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
800+1.03 EUR
Mindestbestellmenge: 800
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MJD44H11-13 MJD44H11-13 Diodes Incorporated Description: TRANS NPN 80V 8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Supplier Device Package: TO-252 (DPAK)
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency - Transition: 3MHz
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.43 EUR
5000+0.42 EUR
7500+0.41 EUR
Mindestbestellmenge: 2500
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MJD44H11-13 Diodes Incorporated MJD44H11-3392755.pdf Bipolar Transistors - BJT Pwr Hi Voltage Transistor TO252 T&R 2.5K
auf Bestellung 1724 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.41 EUR
10+1.02 EUR
100+0.7 EUR
500+0.58 EUR
1000+0.5 EUR
2500+0.44 EUR
5000+0.42 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
MJD44H11-1G MJD44H11-1G onsemi mjd44h11-d.pdf description Description: TRANS NPN 80V 8A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 85MHz
Supplier Device Package: IPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
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MJD44H11-1G MJD44H11-1G onsemi MJD44H11_D-1811546.pdf description Bipolar Transistors - BJT 8A 80V 20W NPN
auf Bestellung 8328 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.63 EUR
10+1.5 EUR
25+1.02 EUR
75+0.71 EUR
525+0.59 EUR
1050+0.49 EUR
4200+0.44 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
MJD44H11AJ MJD44H11AJ Nexperia USA Inc. MJD44H11A.pdf Description: TRANS NPN 80V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency - Transition: 160MHz
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Qualification: AEC-Q101
auf Bestellung 6939 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.41 EUR
21+0.87 EUR
100+0.57 EUR
500+0.44 EUR
1000+0.39 EUR
Mindestbestellmenge: 13
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MJD44H11AJ MJD44H11AJ Nexperia MJD44H11A.pdf Bipolar Transistors - BJT 80 V, 8 A NPN high power bipolar transistor
auf Bestellung 18064 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.24 EUR
10+0.86 EUR
100+0.58 EUR
500+0.45 EUR
1000+0.39 EUR
2500+0.35 EUR
5000+0.31 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
MJD44H11AJ MJD44H11AJ Nexperia USA Inc. MJD44H11A.pdf Description: TRANS NPN 80V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency - Transition: 160MHz
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.35 EUR
Mindestbestellmenge: 2500
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MJD44H11G MJD44H11G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDACA4539D519BE0D3&compId=MJD44H11_MJD45H11.PDF?ci_sign=a0691604677412c63c152e23f5547e6bf1fb8928 description Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 85MHz
auf Bestellung 709 Stücke:
Lieferzeit 14-21 Tag (e)
54+1.33 EUR
77+0.94 EUR
90+0.8 EUR
95+0.75 EUR
300+0.73 EUR
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MJD44H11G MJD44H11G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDACA4539D519BE0D3&compId=MJD44H11_MJD45H11.PDF?ci_sign=a0691604677412c63c152e23f5547e6bf1fb8928 description Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 85MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 709 Stücke:
Lieferzeit 7-14 Tag (e)
54+1.33 EUR
77+0.94 EUR
90+0.8 EUR
95+0.75 EUR
300+0.73 EUR
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MJD44H11G ON-Semicoductor mjd44h11-d.pdf description NPN 8A 80V 20W MJD44H11T4, MJD44H11G, MJD44H11-001 D44H11 TD44H11 dpak
Anzahl je Verpackung: 25 Stücke
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Mindestbestellmenge: 25
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MJD44H11G MJD44H11G onsemi mjd44h11-d.pdf description Description: TRANS NPN 80V 8A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 85MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
auf Bestellung 11959 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.32 EUR
75+1.03 EUR
150+0.92 EUR
525+0.76 EUR
1050+0.7 EUR
2025+0.64 EUR
5025+0.58 EUR
10050+0.55 EUR
Mindestbestellmenge: 8
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MJD44H11G MJD44H11G onsemi MJD44H11_D-1811546.pdf description Bipolar Transistors - BJT 8A 80V 20W NPN
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2+2.38 EUR
10+2.02 EUR
25+1.85 EUR
75+0.87 EUR
525+0.74 EUR
1050+0.69 EUR
4950+0.66 EUR
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MJD44H11G ONS mjd44h11-d.pdf description Транз. Бипол. NPN DPAK-4/ POWER 10A 80V PLA
auf Bestellung 101 Stücke:
Lieferzeit 14-21 Tag (e)
1+1.7 EUR
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MJD44H11J MJD44H11J Nexperia MJD44H11.pdf Bipolar Transistors - BJT 80 V, 8 A NPN high power bipolar transistor
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3+1.31 EUR
10+0.81 EUR
100+0.54 EUR
250+0.53 EUR
500+0.37 EUR
1000+0.33 EUR
2500+0.26 EUR
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MJD44H11J MJD44H11J Nexperia USA Inc. MJD44H11.pdf Description: TRANS NPN 80V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency - Transition: 160MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.31 EUR
5000+0.28 EUR
7500+0.27 EUR
Mindestbestellmenge: 2500
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MJD44H11J MJD44H11J Nexperia USA Inc. MJD44H11.pdf Description: TRANS NPN 80V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency - Transition: 160MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
auf Bestellung 9363 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.27 EUR
23+0.79 EUR
100+0.51 EUR
500+0.39 EUR
1000+0.35 EUR
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MJD44H11Q-13 MJD44H11Q-13 Diodes Incorporated Description: TRANS NPN 80V 8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Supplier Device Package: TO-252 (DPAK)
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency - Transition: 3MHz
Grade: Automotive
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.5 EUR
5000+0.48 EUR
Mindestbestellmenge: 2500
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MJD44H11RLG MJD44H11RLG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDACA4539D519BE0D3&compId=MJD44H11_MJD45H11.PDF?ci_sign=a0691604677412c63c152e23f5547e6bf1fb8928 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 85MHz
auf Bestellung 1700 Stücke:
Lieferzeit 14-21 Tag (e)
61+1.17 EUR
69+1.04 EUR
90+0.8 EUR
95+0.76 EUR
1000+0.74 EUR
Mindestbestellmenge: 61
Im Einkaufswagen  Stück im Wert von  UAH
MJD44H11RLG MJD44H11RLG ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDACA4539D519BE0D3&compId=MJD44H11_MJD45H11.PDF?ci_sign=a0691604677412c63c152e23f5547e6bf1fb8928 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 85MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1700 Stücke:
Lieferzeit 7-14 Tag (e)
61+1.17 EUR
69+1.04 EUR
90+0.8 EUR
95+0.76 EUR
1000+0.74 EUR
1800+0.73 EUR
Mindestbestellmenge: 61
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MJD44H11RLG MJD44H11RLG onsemi MJD44H11_D-1811546.pdf Bipolar Transistors - BJT 8A 80V 20W NPN
auf Bestellung 10521 Stücke:
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2+1.99 EUR
10+1.34 EUR
25+1.28 EUR
100+0.95 EUR
500+0.77 EUR
1000+0.63 EUR
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MJD44H11RLG MJD44H11RLG onsemi mjd44h11-d.pdf Description: TRANS NPN 80V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 85MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
auf Bestellung 5400 Stücke:
Lieferzeit 10-14 Tag (e)
1800+0.69 EUR
3600+0.64 EUR
5400+0.61 EUR
Mindestbestellmenge: 1800
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MJD44H11RLG MJD44H11RLG onsemi mjd44h11-d.pdf Description: TRANS NPN 80V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 85MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
auf Bestellung 5818 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.43 EUR
12+1.55 EUR
100+1.03 EUR
500+0.81 EUR
Mindestbestellmenge: 8
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MJD44H11T4 MJD44H11T4 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B88989A808E780C4&compId=MJD44H11_MJD45H11.pdf?ci_sign=fb71bb8fb6650233f834d6642921308d7a660fd0 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 390 Stücke:
Lieferzeit 14-21 Tag (e)
61+1.19 EUR
83+0.87 EUR
182+0.39 EUR
193+0.37 EUR
Mindestbestellmenge: 61
Im Einkaufswagen  Stück im Wert von  UAH
MJD44H11T4 MJD44H11T4 STMicroelectronics pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B88989A808E780C4&compId=MJD44H11_MJD45H11.pdf?ci_sign=fb71bb8fb6650233f834d6642921308d7a660fd0 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 390 Stücke:
Lieferzeit 7-14 Tag (e)
61+1.19 EUR
83+0.87 EUR
182+0.39 EUR
193+0.37 EUR
2500+0.36 EUR
Mindestbestellmenge: 61
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MJD44H11T4 MJD44H11T4 STMicroelectronics en.CD00001311.pdf mjd44h11-d.pdf Bipolar Transistors - BJT NPN Gen Pur Switch
auf Bestellung 16138 Stücke:
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3+1.3 EUR
10+0.94 EUR
100+0.64 EUR
500+0.54 EUR
1000+0.5 EUR
2500+0.44 EUR
5000+0.43 EUR
Mindestbestellmenge: 3
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MJD44H11T4 MJD44H11T4 STMicroelectronics en.CD00001311.pdf Description: TRANS NPN 80V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 20 W
auf Bestellung 224 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.67 EUR
17+1.04 EUR
100+0.68 EUR
Mindestbestellmenge: 11
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MJD44H11T4-A MJD44H11T4-A STMicroelectronics en.CD00244188.pdf Description: TRANS NPN 80V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 20 W
auf Bestellung 755 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.67 EUR
17+1.04 EUR
100+0.68 EUR
500+0.53 EUR
Mindestbestellmenge: 11
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MJD44H11T4-A MJD44H11T4-A STMicroelectronics en.CD00244188.pdf Bipolar Transistors - BJT Automotive-grade low volt NPN power transistor
auf Bestellung 3464 Stücke:
Lieferzeit 10-14 Tag (e)
3+1.33 EUR
10+0.89 EUR
100+0.62 EUR
500+0.5 EUR
2500+0.44 EUR
5000+0.37 EUR
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MJD44H11T4G MJD44H11T4G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDACA4539D519BE0D3&compId=MJD44H11_MJD45H11.PDF?ci_sign=a0691604677412c63c152e23f5547e6bf1fb8928 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 85MHz
Application: automotive industry
auf Bestellung 1971 Stücke:
Lieferzeit 14-21 Tag (e)
61+1.19 EUR
92+0.78 EUR
192+0.37 EUR
203+0.35 EUR
Mindestbestellmenge: 61
Im Einkaufswagen  Stück im Wert von  UAH
MJD44H11T4G MJD44H11T4G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB281E1EDDACA4539D519BE0D3&compId=MJD44H11_MJD45H11.PDF?ci_sign=a0691604677412c63c152e23f5547e6bf1fb8928 Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 85MHz
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1971 Stücke:
Lieferzeit 7-14 Tag (e)
61+1.19 EUR
92+0.78 EUR
192+0.37 EUR
203+0.35 EUR
2500+0.34 EUR
Mindestbestellmenge: 61
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MJD44H11T4G MJD44H11T4G onsemi MJD44H11_D-1811546.pdf Bipolar Transistors - BJT 8A 80V 20W NPN
auf Bestellung 67308 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.44 EUR
10+0.98 EUR
25+0.92 EUR
100+0.68 EUR
250+0.67 EUR
500+0.54 EUR
1000+0.49 EUR
Mindestbestellmenge: 2
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MJD44H11T4G MJD44H11T4G onsemi mjd44h11-d.pdf Description: TRANS NPN 80V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 85MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
auf Bestellung 22994 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.76 EUR
17+1.1 EUR
100+0.72 EUR
500+0.56 EUR
1000+0.51 EUR
Mindestbestellmenge: 10
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MJD44H11T4G MJD44H11T4G onsemi mjd44h11-d.pdf Description: TRANS NPN 80V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 85MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
auf Bestellung 22500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.45 EUR
5000+0.41 EUR
7500+0.4 EUR
12500+0.38 EUR
17500+0.37 EUR
Mindestbestellmenge: 2500
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MJF44H11G MJF44H11G ONSEMI pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA8FFF8A5C6B51CC&compId=MJF44H11G-DTE.PDF?ci_sign=adb03b109efa686f7d16497074d94fbfd1825781 Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220FP
Current gain: 60
Mounting: THT
Kind of package: tube
Frequency: 50MHz
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.07 EUR
42+1.73 EUR
51+1.42 EUR
54+1.34 EUR
Mindestbestellmenge: 35
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B39871B3744H110 B39871B3744H110.pdf
B39871B3744H110
Hersteller: Qualcomm (RF front-end (RFFE) filters)
Description: FILTER SAW 868.3MHZ 6-SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.118" L x 0.118" W (3.00mm x 3.00mm)
Mounting Type: Surface Mount
Insertion Loss: 3dB
Bandwidth: 600kHz
Applications: Remote Control
Frequency - Center: 868.3MHz
Ratings: AEC-Q200
Height (Max): 0.039" (1.00mm)
Part Status: Active
auf Bestellung 14880 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.29 EUR
10+1.88 EUR
25+1.73 EUR
50+1.63 EUR
100+1.53 EUR
250+1.41 EUR
500+1.33 EUR
1000+1.25 EUR
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B39871B3744H110 B39871B3744H110.pdf
B39871B3744H110
Hersteller: Qualcomm (RF front-end (RFFE) filters)
Description: FILTER SAW 868.3MHZ 6-SMD
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.118" L x 0.118" W (3.00mm x 3.00mm)
Mounting Type: Surface Mount
Insertion Loss: 3dB
Bandwidth: 600kHz
Applications: Remote Control
Frequency - Center: 868.3MHz
Ratings: AEC-Q200
Height (Max): 0.039" (1.00mm)
Part Status: Active
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9000+1.03 EUR
Mindestbestellmenge: 9000
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B39871B3744H110 Qualcomm_B3744-3463759.pdf
B39871B3744H110
Hersteller: RF360
Signal Conditioning 3 mm x 3 mm x 1 mm - 40 C to + 125 C 868.3 MHz 6 V 50 Ohms SRD / ISM: 869 MHz
auf Bestellung 16952 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.36 EUR
10+1.94 EUR
25+1.68 EUR
100+1.58 EUR
250+1.45 EUR
500+1.36 EUR
1000+1.28 EUR
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D44H11 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD01EA2486EE469&compId=D44H11.pdf?ci_sign=f1e8a73b47e1c17e85ceb5fbe8bf1a989e765422
D44H11
Hersteller: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 50MHz
auf Bestellung 102 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.76 EUR
78+0.92 EUR
92+0.78 EUR
102+0.7 EUR
Mindestbestellmenge: 41
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D44H11 en.CD00000942.pdf d44h-d.pdf
Hersteller: ST
Tranzystor NPN; 60; 1,67W; 80V; 10A; 50MHz; -55°C ~ 150°C; Odpowiednik: KSE44H11TU; D44H11; D44H11TU; D44H11G; D44H11 TD44H11 STM
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
20+1.66 EUR
Mindestbestellmenge: 20
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D44H11 pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD01EA2486EE469&compId=D44H11.pdf?ci_sign=f1e8a73b47e1c17e85ceb5fbe8bf1a989e765422
D44H11
Hersteller: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 50MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 102 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
41+1.76 EUR
78+0.92 EUR
92+0.78 EUR
102+0.7 EUR
Mindestbestellmenge: 41
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D44H11 en.CD00000942.pdf
D44H11
Hersteller: STMicroelectronics
Description: TRANS NPN 80V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 50 W
auf Bestellung 998 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.59 EUR
50+1.23 EUR
100+1.1 EUR
500+0.87 EUR
Mindestbestellmenge: 7
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D44H11 en.CD00000942.pdf d44h-d.pdf
D44H11
Hersteller: STMicroelectronics
Bipolar Transistors - BJT NPN Gen Pur Switch
auf Bestellung 16017 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.5 EUR
10+1.58 EUR
100+1.06 EUR
500+0.87 EUR
1000+0.76 EUR
2000+0.7 EUR
5000+0.64 EUR
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D44H11G pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD021839399A469&compId=D44H8G.PDF?ci_sign=78103bae26e64bde0ef0657581f2d5127fad7bb1
D44H11G
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Current gain: 40
Mounting: THT
Kind of package: tube
Frequency: 40MHz
auf Bestellung 285 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
49+1.49 EUR
80+0.9 EUR
91+0.79 EUR
97+0.74 EUR
250+0.72 EUR
Mindestbestellmenge: 49
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D44H11G d44h-d.pdf
Hersteller: ON-Semicoductor
Transistor NPN; Bipolar; 80V; 20V; 50MHz; 10A; 2W; -55°C~150°C; D44H11G TD44H11G ONS
Anzahl je Verpackung: 10 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
20+2.34 EUR
Mindestbestellmenge: 20
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D44H11G pVersion=0046&contRep=ZT&docId=005056AB752F1EE58DD021839399A469&compId=D44H8G.PDF?ci_sign=78103bae26e64bde0ef0657581f2d5127fad7bb1
D44H11G
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Current gain: 40
Mounting: THT
Kind of package: tube
Frequency: 40MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 285 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
49+1.49 EUR
80+0.9 EUR
91+0.79 EUR
97+0.74 EUR
250+0.72 EUR
Mindestbestellmenge: 49
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D44H11G d44h-d.pdf
D44H11G
Hersteller: onsemi
Description: TRANS NPN 80V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
auf Bestellung 7044 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.52 EUR
50+1.19 EUR
100+1.06 EUR
500+0.83 EUR
1000+0.76 EUR
2000+0.7 EUR
5000+0.63 EUR
Mindestbestellmenge: 7
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D44H11G D44H_D-1803404.pdf
D44H11G
Hersteller: onsemi
Bipolar Transistors - BJT 10A 80V 50W NPN
auf Bestellung 6588 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.24 EUR
10+1.56 EUR
50+1.22 EUR
100+1.01 EUR
250+1 EUR
500+0.77 EUR
1000+0.71 EUR
Mindestbestellmenge: 2
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DIV44H11-35PN[V001]
Hersteller: TE Connectivity
Category: Automotive connectors
Description: Connector: circular
Type of connector: circular
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+201.57 EUR
3+178.06 EUR
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KSE44H11 KSE44H.pdf
KSE44H11
Hersteller: onsemi
Description: TRANS NPN 80V 10A TO-220-3
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-220-3
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.67 W
auf Bestellung 1200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.59 EUR
11+1.64 EUR
200+0.99 EUR
600+0.85 EUR
1000+0.79 EUR
Mindestbestellmenge: 7
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KSE44H11TU KSE44H.pdf
Hersteller: ON-Semicoductor
Tranzystor NPN; 60; 1,67W; 80V; 10A; 50MHz; -55°C ~ 150°C; Odpowiednik: KSE44H11TU; D44H11; D44H11TU; D44H11G; KSE44H11TU TD44H11
Anzahl je Verpackung: 7 Stücke
auf Bestellung 7 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
7+5.52 EUR
Mindestbestellmenge: 7
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KSH44H11ITU KSH44H11%28I%29.pdf
KSH44H11ITU
Hersteller: onsemi
Description: TRANS NPN 80V 8A IPAK
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 50MHz
Supplier Device Package: IPAK
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
auf Bestellung 9272 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
624+0.74 EUR
Mindestbestellmenge: 624
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MJB44H11G mjb44h11-d.pdf
Hersteller: ON-Semicoductor
NPN 10A 80V 50W MJB44H11G, MJB44H11T4G, NJVMJB44H11T4G MJB44H11G TD44H11 d2pak
Anzahl je Verpackung: 25 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
25+1.79 EUR
Mindestbestellmenge: 25
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MJB44H11G mjb44h11-d.pdf
MJB44H11G
Hersteller: onsemi
Description: TRANS NPN 80V 10A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 50MHz
Supplier Device Package: D2PAK
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
auf Bestellung 130 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.17 EUR
50+1.53 EUR
100+1.37 EUR
Mindestbestellmenge: 6
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MJB44H11G MJB44H11_D-1811454.pdf
MJB44H11G
Hersteller: onsemi
Bipolar Transistors - BJT 8A 80V 50W NPN
auf Bestellung 2077 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.55 EUR
10+2.06 EUR
50+1.57 EUR
100+1.4 EUR
500+1.24 EUR
1000+1.01 EUR
3000+0.99 EUR
Mindestbestellmenge: 2
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MJB44H11T4-A en.DM00116400.pdf
MJB44H11T4-A
Hersteller: STMicroelectronics
Digital Transistors Automotive-grade low volt NPN power transistor
auf Bestellung 3262 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+2.89 EUR
10+1.83 EUR
100+1.22 EUR
500+0.96 EUR
1000+0.88 EUR
2000+0.77 EUR
5000+0.73 EUR
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MJB44H11T4-A en.DM00116400.pdf
MJB44H11T4-A
Hersteller: STMicroelectronics
Description: TRANS NPN 80V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 50 W
Qualification: AEC-Q101
auf Bestellung 3238 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.8 EUR
10+1.79 EUR
100+1.2 EUR
500+0.95 EUR
Mindestbestellmenge: 7
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MJB44H11T4-A en.DM00116400.pdf
MJB44H11T4-A
Hersteller: STMicroelectronics
Description: TRANS NPN 80V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Supplier Device Package: D2PAK
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 50 W
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.87 EUR
2000+0.8 EUR
3000+0.77 EUR
Mindestbestellmenge: 1000
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MJB44H11T4G mjb44h11-d.pdf
MJB44H11T4G
Hersteller: onsemi
Description: TRANS NPN 80V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 50MHz
Supplier Device Package: D2PAK
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
auf Bestellung 827 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.17 EUR
10+2.03 EUR
100+1.37 EUR
Mindestbestellmenge: 6
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MJB44H11T4G MJB44H11_D-1811454.pdf
MJB44H11T4G
Hersteller: onsemi
Bipolar Transistors - BJT 8A 80V 50W NPN
auf Bestellung 914 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.8 EUR
10+1.97 EUR
100+1.41 EUR
500+1.06 EUR
800+0.99 EUR
Mindestbestellmenge: 2
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MJB44H11T4G mjb44h11-d.pdf
MJB44H11T4G
Hersteller: onsemi
Description: TRANS NPN 80V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 50MHz
Supplier Device Package: D2PAK
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+1.03 EUR
Mindestbestellmenge: 800
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MJD44H11-13
MJD44H11-13
Hersteller: Diodes Incorporated
Description: TRANS NPN 80V 8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Supplier Device Package: TO-252 (DPAK)
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency - Transition: 3MHz
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.43 EUR
5000+0.42 EUR
7500+0.41 EUR
Mindestbestellmenge: 2500
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MJD44H11-13 MJD44H11-3392755.pdf
Hersteller: Diodes Incorporated
Bipolar Transistors - BJT Pwr Hi Voltage Transistor TO252 T&R 2.5K
auf Bestellung 1724 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.41 EUR
10+1.02 EUR
100+0.7 EUR
500+0.58 EUR
1000+0.5 EUR
2500+0.44 EUR
5000+0.42 EUR
Mindestbestellmenge: 2
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MJD44H11-1G description mjd44h11-d.pdf
MJD44H11-1G
Hersteller: onsemi
Description: TRANS NPN 80V 8A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 85MHz
Supplier Device Package: IPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
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MJD44H11-1G description MJD44H11_D-1811546.pdf
MJD44H11-1G
Hersteller: onsemi
Bipolar Transistors - BJT 8A 80V 20W NPN
auf Bestellung 8328 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.63 EUR
10+1.5 EUR
25+1.02 EUR
75+0.71 EUR
525+0.59 EUR
1050+0.49 EUR
4200+0.44 EUR
Mindestbestellmenge: 2
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MJD44H11AJ MJD44H11A.pdf
MJD44H11AJ
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 80V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency - Transition: 160MHz
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Qualification: AEC-Q101
auf Bestellung 6939 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.41 EUR
21+0.87 EUR
100+0.57 EUR
500+0.44 EUR
1000+0.39 EUR
Mindestbestellmenge: 13
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MJD44H11AJ MJD44H11A.pdf
MJD44H11AJ
Hersteller: Nexperia
Bipolar Transistors - BJT 80 V, 8 A NPN high power bipolar transistor
auf Bestellung 18064 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.24 EUR
10+0.86 EUR
100+0.58 EUR
500+0.45 EUR
1000+0.39 EUR
2500+0.35 EUR
5000+0.31 EUR
Mindestbestellmenge: 3
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MJD44H11AJ MJD44H11A.pdf
MJD44H11AJ
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 80V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency - Transition: 160MHz
Supplier Device Package: DPAK
Grade: Automotive
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.35 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
MJD44H11G description pVersion=0046&contRep=ZT&docId=005056AB281E1EDDACA4539D519BE0D3&compId=MJD44H11_MJD45H11.PDF?ci_sign=a0691604677412c63c152e23f5547e6bf1fb8928
MJD44H11G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 85MHz
auf Bestellung 709 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
54+1.33 EUR
77+0.94 EUR
90+0.8 EUR
95+0.75 EUR
300+0.73 EUR
Mindestbestellmenge: 54
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MJD44H11G description pVersion=0046&contRep=ZT&docId=005056AB281E1EDDACA4539D519BE0D3&compId=MJD44H11_MJD45H11.PDF?ci_sign=a0691604677412c63c152e23f5547e6bf1fb8928
MJD44H11G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 85MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 709 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
54+1.33 EUR
77+0.94 EUR
90+0.8 EUR
95+0.75 EUR
300+0.73 EUR
Mindestbestellmenge: 54
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MJD44H11G description mjd44h11-d.pdf
Hersteller: ON-Semicoductor
NPN 8A 80V 20W MJD44H11T4, MJD44H11G, MJD44H11-001 D44H11 TD44H11 dpak
Anzahl je Verpackung: 25 Stücke
auf Bestellung 75 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
25+2.17 EUR
Mindestbestellmenge: 25
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MJD44H11G description mjd44h11-d.pdf
MJD44H11G
Hersteller: onsemi
Description: TRANS NPN 80V 8A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 85MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
auf Bestellung 11959 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.32 EUR
75+1.03 EUR
150+0.92 EUR
525+0.76 EUR
1050+0.7 EUR
2025+0.64 EUR
5025+0.58 EUR
10050+0.55 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
MJD44H11G description MJD44H11_D-1811546.pdf
MJD44H11G
Hersteller: onsemi
Bipolar Transistors - BJT 8A 80V 20W NPN
auf Bestellung 8821 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.38 EUR
10+2.02 EUR
25+1.85 EUR
75+0.87 EUR
525+0.74 EUR
1050+0.69 EUR
4950+0.66 EUR
Mindestbestellmenge: 2
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MJD44H11G description mjd44h11-d.pdf
Hersteller: ONS
Транз. Бипол. NPN DPAK-4/ POWER 10A 80V PLA
auf Bestellung 101 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+1.7 EUR
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MJD44H11J MJD44H11.pdf
MJD44H11J
Hersteller: Nexperia
Bipolar Transistors - BJT 80 V, 8 A NPN high power bipolar transistor
auf Bestellung 3984 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.31 EUR
10+0.81 EUR
100+0.54 EUR
250+0.53 EUR
500+0.37 EUR
1000+0.33 EUR
2500+0.26 EUR
Mindestbestellmenge: 3
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MJD44H11J MJD44H11.pdf
MJD44H11J
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 80V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency - Transition: 160MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.31 EUR
5000+0.28 EUR
7500+0.27 EUR
Mindestbestellmenge: 2500
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MJD44H11J MJD44H11.pdf
MJD44H11J
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 80V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency - Transition: 160MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
auf Bestellung 9363 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.27 EUR
23+0.79 EUR
100+0.51 EUR
500+0.39 EUR
1000+0.35 EUR
Mindestbestellmenge: 14
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MJD44H11Q-13
MJD44H11Q-13
Hersteller: Diodes Incorporated
Description: TRANS NPN 80V 8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Supplier Device Package: TO-252 (DPAK)
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency - Transition: 3MHz
Grade: Automotive
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.5 EUR
5000+0.48 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
MJD44H11RLG pVersion=0046&contRep=ZT&docId=005056AB281E1EDDACA4539D519BE0D3&compId=MJD44H11_MJD45H11.PDF?ci_sign=a0691604677412c63c152e23f5547e6bf1fb8928
MJD44H11RLG
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 85MHz
auf Bestellung 1700 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.17 EUR
69+1.04 EUR
90+0.8 EUR
95+0.76 EUR
1000+0.74 EUR
Mindestbestellmenge: 61
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MJD44H11RLG pVersion=0046&contRep=ZT&docId=005056AB281E1EDDACA4539D519BE0D3&compId=MJD44H11_MJD45H11.PDF?ci_sign=a0691604677412c63c152e23f5547e6bf1fb8928
MJD44H11RLG
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 85MHz
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1700 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
61+1.17 EUR
69+1.04 EUR
90+0.8 EUR
95+0.76 EUR
1000+0.74 EUR
1800+0.73 EUR
Mindestbestellmenge: 61
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MJD44H11RLG MJD44H11_D-1811546.pdf
MJD44H11RLG
Hersteller: onsemi
Bipolar Transistors - BJT 8A 80V 20W NPN
auf Bestellung 10521 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.99 EUR
10+1.34 EUR
25+1.28 EUR
100+0.95 EUR
500+0.77 EUR
1000+0.63 EUR
Mindestbestellmenge: 2
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MJD44H11RLG mjd44h11-d.pdf
MJD44H11RLG
Hersteller: onsemi
Description: TRANS NPN 80V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 85MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
auf Bestellung 5400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1800+0.69 EUR
3600+0.64 EUR
5400+0.61 EUR
Mindestbestellmenge: 1800
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MJD44H11RLG mjd44h11-d.pdf
MJD44H11RLG
Hersteller: onsemi
Description: TRANS NPN 80V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 85MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
auf Bestellung 5818 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.43 EUR
12+1.55 EUR
100+1.03 EUR
500+0.81 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
MJD44H11T4 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B88989A808E780C4&compId=MJD44H11_MJD45H11.pdf?ci_sign=fb71bb8fb6650233f834d6642921308d7a660fd0
MJD44H11T4
Hersteller: STMicroelectronics
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
auf Bestellung 390 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.19 EUR
83+0.87 EUR
182+0.39 EUR
193+0.37 EUR
Mindestbestellmenge: 61
Im Einkaufswagen  Stück im Wert von  UAH
MJD44H11T4 pVersion=0046&contRep=ZT&docId=005056AB90B41ED9B88989A808E780C4&compId=MJD44H11_MJD45H11.pdf?ci_sign=fb71bb8fb6650233f834d6642921308d7a660fd0
MJD44H11T4
Hersteller: STMicroelectronics
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 390 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
61+1.19 EUR
83+0.87 EUR
182+0.39 EUR
193+0.37 EUR
2500+0.36 EUR
Mindestbestellmenge: 61
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MJD44H11T4 en.CD00001311.pdf mjd44h11-d.pdf
MJD44H11T4
Hersteller: STMicroelectronics
Bipolar Transistors - BJT NPN Gen Pur Switch
auf Bestellung 16138 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.3 EUR
10+0.94 EUR
100+0.64 EUR
500+0.54 EUR
1000+0.5 EUR
2500+0.44 EUR
5000+0.43 EUR
Mindestbestellmenge: 3
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MJD44H11T4 en.CD00001311.pdf
MJD44H11T4
Hersteller: STMicroelectronics
Description: TRANS NPN 80V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 20 W
auf Bestellung 224 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.67 EUR
17+1.04 EUR
100+0.68 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
MJD44H11T4-A en.CD00244188.pdf
MJD44H11T4-A
Hersteller: STMicroelectronics
Description: TRANS NPN 80V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 20 W
auf Bestellung 755 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.67 EUR
17+1.04 EUR
100+0.68 EUR
500+0.53 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
MJD44H11T4-A en.CD00244188.pdf
MJD44H11T4-A
Hersteller: STMicroelectronics
Bipolar Transistors - BJT Automotive-grade low volt NPN power transistor
auf Bestellung 3464 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.33 EUR
10+0.89 EUR
100+0.62 EUR
500+0.5 EUR
2500+0.44 EUR
5000+0.37 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
MJD44H11T4G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDACA4539D519BE0D3&compId=MJD44H11_MJD45H11.PDF?ci_sign=a0691604677412c63c152e23f5547e6bf1fb8928
MJD44H11T4G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 85MHz
Application: automotive industry
auf Bestellung 1971 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
61+1.19 EUR
92+0.78 EUR
192+0.37 EUR
203+0.35 EUR
Mindestbestellmenge: 61
Im Einkaufswagen  Stück im Wert von  UAH
MJD44H11T4G pVersion=0046&contRep=ZT&docId=005056AB281E1EDDACA4539D519BE0D3&compId=MJD44H11_MJD45H11.PDF?ci_sign=a0691604677412c63c152e23f5547e6bf1fb8928
MJD44H11T4G
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 85MHz
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1971 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
61+1.19 EUR
92+0.78 EUR
192+0.37 EUR
203+0.35 EUR
2500+0.34 EUR
Mindestbestellmenge: 61
Im Einkaufswagen  Stück im Wert von  UAH
MJD44H11T4G MJD44H11_D-1811546.pdf
MJD44H11T4G
Hersteller: onsemi
Bipolar Transistors - BJT 8A 80V 20W NPN
auf Bestellung 67308 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+1.44 EUR
10+0.98 EUR
25+0.92 EUR
100+0.68 EUR
250+0.67 EUR
500+0.54 EUR
1000+0.49 EUR
Mindestbestellmenge: 2
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MJD44H11T4G mjd44h11-d.pdf
MJD44H11T4G
Hersteller: onsemi
Description: TRANS NPN 80V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 85MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
auf Bestellung 22994 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.76 EUR
17+1.1 EUR
100+0.72 EUR
500+0.56 EUR
1000+0.51 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
MJD44H11T4G mjd44h11-d.pdf
MJD44H11T4G
Hersteller: onsemi
Description: TRANS NPN 80V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 85MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
auf Bestellung 22500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.45 EUR
5000+0.41 EUR
7500+0.4 EUR
12500+0.38 EUR
17500+0.37 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
MJF44H11G pVersion=0046&contRep=ZT&docId=005056AB752F1ED5AA8FFF8A5C6B51CC&compId=MJF44H11G-DTE.PDF?ci_sign=adb03b109efa686f7d16497074d94fbfd1825781
MJF44H11G
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220FP
Current gain: 60
Mounting: THT
Kind of package: tube
Frequency: 50MHz
auf Bestellung 58 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.07 EUR
42+1.73 EUR
51+1.42 EUR
54+1.34 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
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