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| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||
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D44H11G (NPN-Bipolartransistor) Produktcode: 26682
zu Favoriten hinzufügen
Lieblingsprodukt
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ON |
Transistoren > Bipolar-Transistoren NPN Gehäuse: TO-220 Kollektor-Emitter-Spannung Uceo, V: 80 В Kollektor-Basis-Spannung Ucbo, V: 80 В Kollektorstrom Ic, A: 20 А Montage: THT |
auf Bestellung: 50 St.
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MJB44H11T4G Produktcode: 216567
zu Favoriten hinzufügen
Lieblingsprodukt
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ON |
 Transistoren > Bipolar-Transistoren NPNGehäuse: D2PAK (TO-263) Transitfrequenz fT: 50 МГц Kollektor-Emitter-Spannung Uceo, V: 80 В Kollektorstrom Ic, A: 10 А Montage: SMD |
auf Bestellung: 690 St.
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B39871B3744H110 | RF360 |
Signal Conditioning 3 mm x 3 mm x 1 mm - 40 C to + 125 C 868.3 MHz 6 V 50 Ohms SRD / ISM: 869 MHz |
auf Bestellung 20394 Stücke: Lieferzeit 10-14 Tag (e) |
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B39871B3744H110 | Qualcomm (RF front-end (RFFE) filters) |
Description: FILTER SAW 868.3MHZ 6-SMD Packaging: Cut Tape (CT) Package / Case: 6-SMD, No Lead Size / Dimension: 0.118" L x 0.118" W (3.00mm x 3.00mm) Mounting Type: Surface Mount Insertion Loss: 3dB Bandwidth: 600kHz Applications: Remote Control Frequency - Center: 868.3MHz Ratings: AEC-Q200 Height (Max): 0.039" (1.00mm) Part Status: Active |
auf Bestellung 2784 Stücke: Lieferzeit 10-14 Tag (e) |
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D44H11 | STMicroelectronics |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 10A Power dissipation: 50W Case: TO220AB Mounting: THT Kind of package: tube Frequency: 50MHz |
auf Bestellung 165 Stücke: Lieferzeit 14-21 Tag (e) |
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| D44H11 | ST |
Tranzystor NPN; 60; 1,67W; 80V; 10A; 50MHz; -55°C ~ 150°C; Odpowiednik: KSE44H11TU; D44H11; D44H11TU; D44H11G; D44H11 TD44H11 STM Anzahl je Verpackung: 10 Stücke |
auf Bestellung 200 Stücke: Lieferzeit 7-14 Tag (e) |
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| D44H11 | ST |
Tranzystor NPN; 60; 1,67W; 80V; 10A; 50MHz; -55°C ~ 150°C; Odpowiednik: KSE44H11TU; D44H11; D44H11TU; D44H11G; D44H11 TD44H11 STM Anzahl je Verpackung: 10 Stücke |
auf Bestellung 90 Stücke: Lieferzeit 7-14 Tag (e) |
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D44H11 | STMicroelectronics |
Description: TRANS NPN 80V 10A TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V Supplier Device Package: TO-220 Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 50 W |
auf Bestellung 1370 Stücke: Lieferzeit 10-14 Tag (e) |
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D44H11 | STMicroelectronics |
Bipolar Transistors - BJT NPN Gen Pur Switch |
auf Bestellung 6935 Stücke: Lieferzeit 10-14 Tag (e) |
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| D44H11 TIN/LEAD | Central Semiconductor | Bipolar Transistors - BJT 80Vceo 5.0Vebo 8.0A 16A Icm 20W |
auf Bestellung 40 Stücke: Lieferzeit 10-14 Tag (e) |
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D44H11G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220AB Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 10A Power dissipation: 50W Case: TO220AB Current gain: 40 Mounting: THT Kind of package: tube Frequency: 40MHz |
auf Bestellung 168 Stücke: Lieferzeit 14-21 Tag (e) |
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| D44H11G | ON-Semiconductor |
Transistor NPN; Bipolar; 80V; 20V; 50MHz; 10A; 2W; -55°C~150°C; D44H11G TD44H11G ONS Anzahl je Verpackung: 10 Stücke |
auf Bestellung 40 Stücke: Lieferzeit 7-14 Tag (e) |
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D44H11G | onsemi |
Bipolar Transistors - BJT 10A 80V 50W NPN |
auf Bestellung 3370 Stücke: Lieferzeit 10-14 Tag (e) |
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D44H11G | onsemi |
Description: TRANS NPN 80V 10A TO-220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V Frequency - Transition: 50MHz Supplier Device Package: TO-220 Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 2 W |
auf Bestellung 3778 Stücke: Lieferzeit 10-14 Tag (e) |
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| DIV44H11-35PN[V001] | TE Connectivity |
Category: Automotive connectors Description: Connector: circular; PIN: 13; straight; front side nut; metal Type of connector: circular Locking system: push-pull Contact plating: gold-plated Spatial orientation: straight Contact material: copper alloy Connector variant: unshielded Number of pins: 13 Plating material: nickel Enclosure material: stainless steel Mechanical mounting: front side nut Body material: metal |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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| KSE44H11TU | ON-Semiconductor |
Tranzystor NPN; 60; 1,67W; 80V; 10A; 50MHz; -55°C ~ 150°C; Odpowiednik: KSE44H11TU; D44H11; D44H11TU; D44H11G; KSE44H11TU TD44H11 Anzahl je Verpackung: 7 Stücke |
auf Bestellung 7 Stücke: Lieferzeit 7-14 Tag (e) |
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KSH44H11ITU | onsemi |
Description: TRANS NPN 80V 8A IPAK Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V Frequency - Transition: 50MHz Supplier Device Package: IPAK Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.75 W |
auf Bestellung 6872 Stücke: Lieferzeit 10-14 Tag (e) |
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| MJB44H11G | ON-Semiconductor |
NPN 10A 80V 50W MJB44H11G, MJB44H11T4G, NJVMJB44H11T4G MJB44H11G TD44H11 d2pak Anzahl je Verpackung: 50 Stücke |
auf Bestellung 300 Stücke: Lieferzeit 7-14 Tag (e) |
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| MJB44H11G | ON-Semiconductor |
NPN 10A 80V 50W MJB44H11G, MJB44H11T4G, NJVMJB44H11T4G MJB44H11G TD44H11 d2pak Anzahl je Verpackung: 50 Stücke |
auf Bestellung 40 Stücke: Lieferzeit 7-14 Tag (e) |
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MJB44H11G | onsemi |
Bipolar Transistors - BJT 8A 80V 50W NPN |
auf Bestellung 6397 Stücke: Lieferzeit 10-14 Tag (e) |
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MJB44H11G | onsemi |
Description: TRANS NPN 80V 10A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V Frequency - Transition: 50MHz Supplier Device Package: D2PAK Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 2 W |
auf Bestellung 570 Stücke: Lieferzeit 10-14 Tag (e) |
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MJB44H11T4-A | STMicroelectronics |
Digital Transistors Automotive-grade low voltage NPN power transistor |
auf Bestellung 6903 Stücke: Lieferzeit 10-14 Tag (e) |
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MJB44H11T4-A | STMicroelectronics |
Description: TRANS NPN 80V 10A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V Supplier Device Package: D2PAK Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 50 W Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 7000 Stücke: Lieferzeit 10-14 Tag (e) |
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MJB44H11T4-A | STMicroelectronics |
Description: TRANS NPN 80V 10A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V Supplier Device Package: D2PAK Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 50 W Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 7470 Stücke: Lieferzeit 10-14 Tag (e) |
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MJB44H11T4G | onsemi |
Description: TRANS NPN 80V 10A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V Frequency - Transition: 50MHz Supplier Device Package: D2PAK Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 2 W |
auf Bestellung 6328 Stücke: Lieferzeit 10-14 Tag (e) |
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MJB44H11T4G | onsemi |
Bipolar Transistors - BJT 8A 80V 50W NPN |
auf Bestellung 792 Stücke: Lieferzeit 10-14 Tag (e) |
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MJB44H11T4G | onsemi |
Description: TRANS NPN 80V 10A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V Frequency - Transition: 50MHz Supplier Device Package: D2PAK Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 2 W |
auf Bestellung 5600 Stücke: Lieferzeit 10-14 Tag (e) |
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| MJD44H11 | GOODWORK |
 Description: 8A 80V 1.75W TO-252 |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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| MJD44H11-13 | Diodes Incorporated |
Bipolar Transistors - BJT Pwr Hi Voltage Transistor TO252 T&R 2.5K |
auf Bestellung 1125 Stücke: Lieferzeit 10-14 Tag (e) |
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MJD44H11-1G | onsemi |
Bipolar Transistors - BJT 8A 80V 20W NPN |
auf Bestellung 10624 Stücke: Lieferzeit 10-14 Tag (e) |
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MJD44H11AJ | Nexperia |
Bipolar Transistors - BJT SOT428 80V 8A NPN HI PWR BJT |
auf Bestellung 36 Stücke: Lieferzeit 10-14 Tag (e) |
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MJD44H11G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 8A Power dissipation: 20W Case: DPAK Current gain: 60 Mounting: SMD Kind of package: tube Frequency: 85MHz |
auf Bestellung 604 Stücke: Lieferzeit 14-21 Tag (e) |
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| MJD44H11G | ON-Semiconductor |
NPN 8A 80V 20W MJD44H11T4, MJD44H11G, MJD44H11-001 D44H11 TD44H11 dpak Anzahl je Verpackung: 25 Stücke |
auf Bestellung 75 Stücke: Lieferzeit 7-14 Tag (e) |
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MJD44H11G | onsemi |
Description: TRANS NPN 80V 8A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V Frequency - Transition: 85MHz Supplier Device Package: DPAK Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.75 W |
auf Bestellung 2763 Stücke: Lieferzeit 10-14 Tag (e) |
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MJD44H11G | onsemi |
Bipolar Transistors - BJT 8A 80V 20W NPN |
auf Bestellung 3183 Stücke: Lieferzeit 10-14 Tag (e) |
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MJD44H11G | On Semiconductor |
NPN, Uкэ=80V, Iк=8A (16 имп.), h21=40...60, 50МГц, 20Вт, DPAK (TO-252) (SMD) (компл. MJD45H11) Транзистори |
auf Bestellung 400 Stücke: Lieferzeit 14-21 Tag (e) |
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| MJD44H11J | NXP |
Bipolar (BJT) Transistor NPN 80V 8A 160MHz 1.75W Surface Mount DPAK MJD44H11J DPAK(SOT428C) NEXPERIA TMJD44H11J Anzahl je Verpackung: 50 Stücke |
auf Bestellung 150 Stücke: Lieferzeit 7-14 Tag (e) |
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MJD44H11J | Nexperia |
Bipolar Transistors - BJT SOT428 80V 8A NPN HI PWR BJT |
auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) |
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MJD44H11J | Nexperia USA Inc. |
Description: TRANS NPN 80V 8A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V Frequency - Transition: 160MHz Supplier Device Package: DPAK Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.75 W |
auf Bestellung 369 Stücke: Lieferzeit 10-14 Tag (e) |
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MJD44H11RLG | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 8A Power dissipation: 20W Case: DPAK Current gain: 60 Mounting: SMD Kind of package: reel; tape Frequency: 85MHz |
auf Bestellung 1668 Stücke: Lieferzeit 14-21 Tag (e) |
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MJD44H11RLG | onsemi |
Bipolar Transistors - BJT 8A 80V 20W NPN |
auf Bestellung 8209 Stücke: Lieferzeit 10-14 Tag (e) |
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MJD44H11RLG | onsemi |
Description: TRANS NPN 80V 8A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V Frequency - Transition: 85MHz Supplier Device Package: DPAK Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.75 W |
auf Bestellung 12600 Stücke: Lieferzeit 10-14 Tag (e) |
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MJD44H11RLG | onsemi |
Description: TRANS NPN 80V 8A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V Frequency - Transition: 85MHz Supplier Device Package: DPAK Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.75 W |
auf Bestellung 13711 Stücke: Lieferzeit 10-14 Tag (e) |
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MJD44H11T4 | STMicroelectronics |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 8A Power dissipation: 20W Case: DPAK Mounting: SMD Kind of package: reel; tape Pulsed collector current: 16A |
auf Bestellung 1776 Stücke: Lieferzeit 14-21 Tag (e) |
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MJD44H11T4 | STMicroelectronics |
Description: TRANS NPN 80V 8A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V Supplier Device Package: DPAK Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 20 W |
auf Bestellung 22500 Stücke: Lieferzeit 10-14 Tag (e) |
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MJD44H11T4 | STMicroelectronics |
Description: TRANS NPN 80V 8A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V Supplier Device Package: DPAK Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 20 W |
auf Bestellung 23894 Stücke: Lieferzeit 10-14 Tag (e) |
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MJD44H11T4 | STMicroelectronics |
Bipolar Transistors - BJT NPN Gen Pur Switch |
auf Bestellung 9270 Stücke: Lieferzeit 10-14 Tag (e) |
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MJD44H11T4-A | STMicroelectronics |
Description: TRANS NPN 80V 8A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 10µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V Supplier Device Package: DPAK Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 20 W |
auf Bestellung 339 Stücke: Lieferzeit 10-14 Tag (e) |
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MJD44H11T4-A | STMicroelectronics |
Bipolar Transistors - BJT Automotive-grade low voltage NPN power transistor |
auf Bestellung 5620 Stücke: Lieferzeit 10-14 Tag (e) |
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MJD44H11T4G | ONSEMI |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 8A Power dissipation: 20W Case: DPAK Current gain: 60 Mounting: SMD Kind of package: reel; tape Frequency: 85MHz Application: automotive industry |
auf Bestellung 496 Stücke: Lieferzeit 14-21 Tag (e) |
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MJD44H11T4G | onsemi |
Description: TRANS NPN 80V 8A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V Frequency - Transition: 85MHz Supplier Device Package: DPAK Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.75 W |
auf Bestellung 72500 Stücke: Lieferzeit 10-14 Tag (e) |
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MJD44H11T4G | onsemi |
Bipolar Transistors - BJT 8A 80V 20W NPN |
auf Bestellung 28486 Stücke: Lieferzeit 10-14 Tag (e) |
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MJD44H11T4G | onsemi |
Description: TRANS NPN 80V 8A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V Frequency - Transition: 85MHz Supplier Device Package: DPAK Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.75 W |
auf Bestellung 74699 Stücke: Lieferzeit 10-14 Tag (e) |
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MJF44H11G | ONSEMI |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220FP Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 80V Collector current: 10A Power dissipation: 50W Case: TO220FP Current gain: 60 Mounting: THT Kind of package: tube Frequency: 50MHz |
auf Bestellung 469 Stücke: Lieferzeit 14-21 Tag (e) |
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| MJF44H11G | ON-Semiconductor |
NPN 10A 80V 2W MJF44H11G TMJF44h11g Anzahl je Verpackung: 25 Stücke |
auf Bestellung 140 Stücke: Lieferzeit 7-14 Tag (e) |
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MJF44H11G | onsemi |
Description: TRANS NPN 80V 10A TO-220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V Frequency - Transition: 50MHz Supplier Device Package: TO-220FP Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 2 W |
auf Bestellung 2107 Stücke: Lieferzeit 10-14 Tag (e) |
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MJF44H11G | onsemi |
Bipolar Transistors - BJT 10A 80V 50W NPN |
auf Bestellung 11871 Stücke: Lieferzeit 10-14 Tag (e) |
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MJK44H11TWG | onsemi |
Bipolar Transistors - BJT NPN BIP PWR XTSR 8A/80V LFPAK56 |
auf Bestellung 3000 Stücke: Lieferzeit 136-140 Tag (e) |
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MJPE44H11-QZ | Nexperia USA Inc. |
Description: MJPE44H11-Q/SOT1289B/CFP15 Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 175°C (TJ) Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A Current - Collector Cutoff (Max): 1µA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V Frequency - Transition: 155MHz Supplier Device Package: CFP15B Grade: Automotive Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.65 W Qualification: AEC-Q101 |
auf Bestellung 238 Stücke: Lieferzeit 10-14 Tag (e) |
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MJPE44H11-QZ | Nexperia |
Bipolar Transistors - BJT MJPE44H11-Q/SOT1289B/CFP15 |
auf Bestellung 5174 Stücke: Lieferzeit 10-14 Tag (e) |
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| D44H11G (NPN-Bipolartransistor) Produktcode: 26682
zu Favoriten hinzufügen
Lieblingsprodukt
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Hersteller: ON
Transistoren > Bipolar-Transistoren NPN
Gehäuse: TO-220
Kollektor-Emitter-Spannung Uceo, V: 80 В
Kollektor-Basis-Spannung Ucbo, V: 80 В
Kollektorstrom Ic, A: 20 А
Montage: THT
Transistoren > Bipolar-Transistoren NPN
Gehäuse: TO-220
Kollektor-Emitter-Spannung Uceo, V: 80 В
Kollektor-Basis-Spannung Ucbo, V: 80 В
Kollektorstrom Ic, A: 20 А
Montage: THT
auf Bestellung: 50 St.
- 50 St. - Lieferzeit 21-28 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 0.79 EUR |
| 10+ | 0.64 EUR |
| 100+ | 0.56 EUR |
| MJB44H11T4G Produktcode: 216567
zu Favoriten hinzufügen
Lieblingsprodukt
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|
Hersteller: ON
Transistoren > Bipolar-Transistoren NPN
Gehäuse: D2PAK (TO-263)
Transitfrequenz fT: 50 МГц
Kollektor-Emitter-Spannung Uceo, V: 80 В
Kollektorstrom Ic, A: 10 А
Montage: SMD
Transistoren > Bipolar-Transistoren NPN
Gehäuse: D2PAK (TO-263)
Transitfrequenz fT: 50 МГц
Kollektor-Emitter-Spannung Uceo, V: 80 В
Kollektorstrom Ic, A: 10 А
Montage: SMD
auf Bestellung: 690 St.
- 690 St. - Lieferzeit 21-28 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 1.73 EUR |
| 10+ | 1.61 EUR |
| 100+ | 1.52 EUR |
| B39871B3744H110 |
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Hersteller: RF360
Signal Conditioning 3 mm x 3 mm x 1 mm - 40 C to + 125 C 868.3 MHz 6 V 50 Ohms SRD / ISM: 869 MHz
Signal Conditioning 3 mm x 3 mm x 1 mm - 40 C to + 125 C 868.3 MHz 6 V 50 Ohms SRD / ISM: 869 MHz
auf Bestellung 20394 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.83 EUR |
| 10+ | 2.31 EUR |
| 25+ | 2 EUR |
| 100+ | 1.89 EUR |
| 250+ | 1.74 EUR |
| 500+ | 1.63 EUR |
| 1000+ | 1.54 EUR |
| B39871B3744H110 |
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Hersteller: Qualcomm (RF front-end (RFFE) filters)
Description: FILTER SAW 868.3MHZ 6-SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.118" L x 0.118" W (3.00mm x 3.00mm)
Mounting Type: Surface Mount
Insertion Loss: 3dB
Bandwidth: 600kHz
Applications: Remote Control
Frequency - Center: 868.3MHz
Ratings: AEC-Q200
Height (Max): 0.039" (1.00mm)
Part Status: Active
Description: FILTER SAW 868.3MHZ 6-SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, No Lead
Size / Dimension: 0.118" L x 0.118" W (3.00mm x 3.00mm)
Mounting Type: Surface Mount
Insertion Loss: 3dB
Bandwidth: 600kHz
Applications: Remote Control
Frequency - Center: 868.3MHz
Ratings: AEC-Q200
Height (Max): 0.039" (1.00mm)
Part Status: Active
auf Bestellung 2784 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.89 EUR |
| 10+ | 2.34 EUR |
| 25+ | 2.17 EUR |
| 50+ | 2.03 EUR |
| 100+ | 1.92 EUR |
| 250+ | 1.76 EUR |
| 500+ | 1.67 EUR |
| 1000+ | 1.56 EUR |
| D44H11 |
|
Hersteller: STMicroelectronics
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 50MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Mounting: THT
Kind of package: tube
Frequency: 50MHz
auf Bestellung 165 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 52+ | 1.65 EUR |
| 68+ | 1.26 EUR |
| 78+ | 1.11 EUR |
| 93+ | 0.93 EUR |
| 105+ | 0.81 EUR |
| 117+ | 0.73 EUR |
| D44H11 |
|
Hersteller: ST
Tranzystor NPN; 60; 1,67W; 80V; 10A; 50MHz; -55°C ~ 150°C; Odpowiednik: KSE44H11TU; D44H11; D44H11TU; D44H11G; D44H11 TD44H11 STM
Anzahl je Verpackung: 10 Stücke
Tranzystor NPN; 60; 1,67W; 80V; 10A; 50MHz; -55°C ~ 150°C; Odpowiednik: KSE44H11TU; D44H11; D44H11TU; D44H11G; D44H11 TD44H11 STM
Anzahl je Verpackung: 10 Stücke
auf Bestellung 200 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 1.96 EUR |
| D44H11 |
|
Hersteller: ST
Tranzystor NPN; 60; 1,67W; 80V; 10A; 50MHz; -55°C ~ 150°C; Odpowiednik: KSE44H11TU; D44H11; D44H11TU; D44H11G; D44H11 TD44H11 STM
Anzahl je Verpackung: 10 Stücke
Tranzystor NPN; 60; 1,67W; 80V; 10A; 50MHz; -55°C ~ 150°C; Odpowiednik: KSE44H11TU; D44H11; D44H11TU; D44H11G; D44H11 TD44H11 STM
Anzahl je Verpackung: 10 Stücke
auf Bestellung 90 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 1.96 EUR |
| D44H11 |
|
Hersteller: STMicroelectronics
Description: TRANS NPN 80V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 50 W
Description: TRANS NPN 80V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 50 W
auf Bestellung 1370 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.82 EUR |
| 50+ | 2.36 EUR |
| 100+ | 2.12 EUR |
| 500+ | 1.69 EUR |
| 1000+ | 1.56 EUR |
| D44H11 |
|
Hersteller: STMicroelectronics
Bipolar Transistors - BJT NPN Gen Pur Switch
Bipolar Transistors - BJT NPN Gen Pur Switch
auf Bestellung 6935 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 3.06 EUR |
| 10+ | 1.95 EUR |
| 100+ | 1.3 EUR |
| 500+ | 1.25 EUR |
| 5000+ | 1.15 EUR |
| 10000+ | 0.71 EUR |
| D44H11 TIN/LEAD |
Hersteller: Central Semiconductor
Bipolar Transistors - BJT 80Vceo 5.0Vebo 8.0A 16A Icm 20W
Bipolar Transistors - BJT 80Vceo 5.0Vebo 8.0A 16A Icm 20W
auf Bestellung 40 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.12 EUR |
| 10+ | 4 EUR |
| 100+ | 3.06 EUR |
| 400+ | 2.53 EUR |
| 1200+ | 2.18 EUR |
| 2800+ | 2.07 EUR |
| D44H11G |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Current gain: 40
Mounting: THT
Kind of package: tube
Frequency: 40MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220AB
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220AB
Current gain: 40
Mounting: THT
Kind of package: tube
Frequency: 40MHz
auf Bestellung 168 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 46+ | 1.89 EUR |
| 93+ | 0.93 EUR |
| 112+ | 0.76 EUR |
| D44H11G |
|
Hersteller: ON-Semiconductor
Transistor NPN; Bipolar; 80V; 20V; 50MHz; 10A; 2W; -55°C~150°C; D44H11G TD44H11G ONS
Anzahl je Verpackung: 10 Stücke
Transistor NPN; Bipolar; 80V; 20V; 50MHz; 10A; 2W; -55°C~150°C; D44H11G TD44H11G ONS
Anzahl je Verpackung: 10 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 2.89 EUR |
| D44H11G |
|
Hersteller: onsemi
Bipolar Transistors - BJT 10A 80V 50W NPN
Bipolar Transistors - BJT 10A 80V 50W NPN
auf Bestellung 3370 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.64 EUR |
| 10+ | 2.24 EUR |
| 100+ | 2 EUR |
| D44H11G |
|
Hersteller: onsemi
Description: TRANS NPN 80V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Description: TRANS NPN 80V 10A TO-220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-220
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
auf Bestellung 3778 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.63 EUR |
| 50+ | 2.26 EUR |
| 100+ | 2.03 EUR |
| 500+ | 1.63 EUR |
| 1000+ | 1.5 EUR |
| 2000+ | 1.39 EUR |
| DIV44H11-35PN[V001] |
Hersteller: TE Connectivity
Category: Automotive connectors
Description: Connector: circular; PIN: 13; straight; front side nut; metal
Type of connector: circular
Locking system: push-pull
Contact plating: gold-plated
Spatial orientation: straight
Contact material: copper alloy
Connector variant: unshielded
Number of pins: 13
Plating material: nickel
Enclosure material: stainless steel
Mechanical mounting: front side nut
Body material: metal
Category: Automotive connectors
Description: Connector: circular; PIN: 13; straight; front side nut; metal
Type of connector: circular
Locking system: push-pull
Contact plating: gold-plated
Spatial orientation: straight
Contact material: copper alloy
Connector variant: unshielded
Number of pins: 13
Plating material: nickel
Enclosure material: stainless steel
Mechanical mounting: front side nut
Body material: metal
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 237.4 EUR |
| 3+ | 209.71 EUR |
| KSE44H11TU |
|
Hersteller: ON-Semiconductor
Tranzystor NPN; 60; 1,67W; 80V; 10A; 50MHz; -55°C ~ 150°C; Odpowiednik: KSE44H11TU; D44H11; D44H11TU; D44H11G; KSE44H11TU TD44H11
Anzahl je Verpackung: 7 Stücke
Tranzystor NPN; 60; 1,67W; 80V; 10A; 50MHz; -55°C ~ 150°C; Odpowiednik: KSE44H11TU; D44H11; D44H11TU; D44H11G; KSE44H11TU TD44H11
Anzahl je Verpackung: 7 Stücke
auf Bestellung 7 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 6.82 EUR |
| KSH44H11ITU |
|
Hersteller: onsemi
Description: TRANS NPN 80V 8A IPAK
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 50MHz
Supplier Device Package: IPAK
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Description: TRANS NPN 80V 8A IPAK
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 50MHz
Supplier Device Package: IPAK
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
auf Bestellung 6872 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 516+ | 1.06 EUR |
| MJB44H11G |
|
Hersteller: ON-Semiconductor
NPN 10A 80V 50W MJB44H11G, MJB44H11T4G, NJVMJB44H11T4G MJB44H11G TD44H11 d2pak
Anzahl je Verpackung: 50 Stücke
NPN 10A 80V 50W MJB44H11G, MJB44H11T4G, NJVMJB44H11T4G MJB44H11G TD44H11 d2pak
Anzahl je Verpackung: 50 Stücke
auf Bestellung 300 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 50+ | 2.27 EUR |
| MJB44H11G |
|
Hersteller: ON-Semiconductor
NPN 10A 80V 50W MJB44H11G, MJB44H11T4G, NJVMJB44H11T4G MJB44H11G TD44H11 d2pak
Anzahl je Verpackung: 50 Stücke
NPN 10A 80V 50W MJB44H11G, MJB44H11T4G, NJVMJB44H11T4G MJB44H11G TD44H11 d2pak
Anzahl je Verpackung: 50 Stücke
auf Bestellung 40 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 50+ | 2.27 EUR |
| MJB44H11G |
|
Hersteller: onsemi
Bipolar Transistors - BJT 8A 80V 50W NPN
Bipolar Transistors - BJT 8A 80V 50W NPN
auf Bestellung 6397 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.69 EUR |
| 10+ | 1.56 EUR |
| 100+ | 1.32 EUR |
| MJB44H11G |
|
Hersteller: onsemi
Description: TRANS NPN 80V 10A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 50MHz
Supplier Device Package: D2PAK
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Description: TRANS NPN 80V 10A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 50MHz
Supplier Device Package: D2PAK
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
auf Bestellung 570 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.77 EUR |
| 50+ | 1.82 EUR |
| 100+ | 1.63 EUR |
| 500+ | 1.3 EUR |
| MJB44H11T4-A |
|
Hersteller: STMicroelectronics
Digital Transistors Automotive-grade low voltage NPN power transistor
Digital Transistors Automotive-grade low voltage NPN power transistor
auf Bestellung 6903 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 3.28 EUR |
| 10+ | 2.09 EUR |
| 100+ | 1.4 EUR |
| 500+ | 1.11 EUR |
| 1000+ | 0.98 EUR |
| 2000+ | 0.88 EUR |
| 5000+ | 0.81 EUR |
| MJB44H11T4-A |
|
Hersteller: STMicroelectronics
Description: TRANS NPN 80V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Supplier Device Package: D2PAK
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 50 W
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS NPN 80V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Supplier Device Package: D2PAK
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 50 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 1.02 EUR |
| 2000+ | 0.94 EUR |
| 3000+ | 0.9 EUR |
| 5000+ | 0.86 EUR |
| 7000+ | 0.83 EUR |
| MJB44H11T4-A |
|
Hersteller: STMicroelectronics
Description: TRANS NPN 80V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Supplier Device Package: D2PAK
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 50 W
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS NPN 80V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Supplier Device Package: D2PAK
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 50 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7470 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.36 EUR |
| 10+ | 2.13 EUR |
| 100+ | 1.43 EUR |
| 500+ | 1.12 EUR |
| MJB44H11T4G |
|
Hersteller: onsemi
Description: TRANS NPN 80V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 50MHz
Supplier Device Package: D2PAK
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Description: TRANS NPN 80V 10A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 50MHz
Supplier Device Package: D2PAK
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
auf Bestellung 6328 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 4 EUR |
| 10+ | 2.56 EUR |
| 100+ | 1.74 EUR |
| MJB44H11T4G |
|
Hersteller: onsemi
Bipolar Transistors - BJT 8A 80V 50W NPN
Bipolar Transistors - BJT 8A 80V 50W NPN
auf Bestellung 792 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.89 EUR |
| 10+ | 2.51 EUR |
| 100+ | 1.64 EUR |
| 500+ | 1.2 EUR |
| MJB44H11T4G |
|
Hersteller: onsemi
Description: TRANS NPN 80V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 50MHz
Supplier Device Package: D2PAK
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Description: TRANS NPN 80V 10A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 50MHz
Supplier Device Package: D2PAK
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
auf Bestellung 5600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 800+ | 1.23 EUR |
| 1600+ | 1.13 EUR |
| MJD44H11 | |
Hersteller: GOODWORK
Description: 8A 80V 1.75W TO-252
Description: 8A 80V 1.75W TO-252
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.06 EUR |
| MJD44H11-13 |
|
Hersteller: Diodes Incorporated
Bipolar Transistors - BJT Pwr Hi Voltage Transistor TO252 T&R 2.5K
Bipolar Transistors - BJT Pwr Hi Voltage Transistor TO252 T&R 2.5K
auf Bestellung 1125 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.43 EUR |
| 10+ | 1.5 EUR |
| 100+ | 0.99 EUR |
| 500+ | 0.77 EUR |
| 1000+ | 0.68 EUR |
| 2500+ | 0.54 EUR |
| MJD44H11-1G |
|
Hersteller: onsemi
Bipolar Transistors - BJT 8A 80V 20W NPN
Bipolar Transistors - BJT 8A 80V 20W NPN
auf Bestellung 10624 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.12 EUR |
| 10+ | 0.92 EUR |
| 75+ | 0.81 EUR |
| 525+ | 0.67 EUR |
| MJD44H11AJ |
|
Hersteller: Nexperia
Bipolar Transistors - BJT SOT428 80V 8A NPN HI PWR BJT
Bipolar Transistors - BJT SOT428 80V 8A NPN HI PWR BJT
auf Bestellung 36 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.14 EUR |
| 10+ | 1.54 EUR |
| 100+ | 0.95 EUR |
| 500+ | 0.65 EUR |
| 1000+ | 0.56 EUR |
| 2500+ | 0.5 EUR |
| 5000+ | 0.43 EUR |
| MJD44H11G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 85MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: tube
Frequency: 85MHz
auf Bestellung 604 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 50+ | 1.74 EUR |
| 99+ | 0.87 EUR |
| MJD44H11G |
|
Hersteller: ON-Semiconductor
NPN 8A 80V 20W MJD44H11T4, MJD44H11G, MJD44H11-001 D44H11 TD44H11 dpak
Anzahl je Verpackung: 25 Stücke
NPN 8A 80V 20W MJD44H11T4, MJD44H11G, MJD44H11-001 D44H11 TD44H11 dpak
Anzahl je Verpackung: 25 Stücke
auf Bestellung 75 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 25+ | 2.68 EUR |
| MJD44H11G |
|
Hersteller: onsemi
Description: TRANS NPN 80V 8A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 85MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Description: TRANS NPN 80V 8A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 85MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
auf Bestellung 2763 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.62 EUR |
| 75+ | 1.15 EUR |
| 150+ | 1.02 EUR |
| 525+ | 0.86 EUR |
| 1050+ | 0.77 EUR |
| 2025+ | 0.71 EUR |
| MJD44H11G |
|
Hersteller: onsemi
Bipolar Transistors - BJT 8A 80V 20W NPN
Bipolar Transistors - BJT 8A 80V 20W NPN
auf Bestellung 3183 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.57 EUR |
| 10+ | 1.13 EUR |
| 75+ | 1.01 EUR |
| MJD44H11G |
|
Hersteller: On Semiconductor
NPN, Uкэ=80V, Iк=8A (16 имп.), h21=40...60, 50МГц, 20Вт, DPAK (TO-252) (SMD) (компл. MJD45H11) Транзистори
NPN, Uкэ=80V, Iк=8A (16 имп.), h21=40...60, 50МГц, 20Вт, DPAK (TO-252) (SMD) (компл. MJD45H11) Транзистори
auf Bestellung 400 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 4.78 EUR |
| MJD44H11J |
|
Hersteller: NXP
Bipolar (BJT) Transistor NPN 80V 8A 160MHz 1.75W Surface Mount DPAK MJD44H11J DPAK(SOT428C) NEXPERIA TMJD44H11J
Anzahl je Verpackung: 50 Stücke
Bipolar (BJT) Transistor NPN 80V 8A 160MHz 1.75W Surface Mount DPAK MJD44H11J DPAK(SOT428C) NEXPERIA TMJD44H11J
Anzahl je Verpackung: 50 Stücke
auf Bestellung 150 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 50+ | 1.38 EUR |
| MJD44H11J |
|
Hersteller: Nexperia
Bipolar Transistors - BJT SOT428 80V 8A NPN HI PWR BJT
Bipolar Transistors - BJT SOT428 80V 8A NPN HI PWR BJT
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.92 EUR |
| 10+ | 1.37 EUR |
| 100+ | 0.86 EUR |
| 500+ | 0.58 EUR |
| 1000+ | 0.5 EUR |
| 2500+ | 0.44 EUR |
| 5000+ | 0.38 EUR |
| MJD44H11J |
|
Hersteller: Nexperia USA Inc.
Description: TRANS NPN 80V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency - Transition: 160MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Description: TRANS NPN 80V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency - Transition: 160MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
auf Bestellung 369 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.31 EUR |
| 15+ | 1.42 EUR |
| 100+ | 0.92 EUR |
| MJD44H11RLG |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 85MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 85MHz
auf Bestellung 1668 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 47+ | 1.83 EUR |
| 60+ | 1.43 EUR |
| 70+ | 1.23 EUR |
| 98+ | 0.87 EUR |
| MJD44H11RLG |
|
Hersteller: onsemi
Bipolar Transistors - BJT 8A 80V 20W NPN
Bipolar Transistors - BJT 8A 80V 20W NPN
auf Bestellung 8209 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.7 EUR |
| 10+ | 1.62 EUR |
| 100+ | 1.12 EUR |
| 500+ | 0.89 EUR |
| 1000+ | 0.71 EUR |
| 1800+ | 0.65 EUR |
| MJD44H11RLG |
|
Hersteller: onsemi
Description: TRANS NPN 80V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 85MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Description: TRANS NPN 80V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 85MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
auf Bestellung 12600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1800+ | 0.73 EUR |
| 3600+ | 0.67 EUR |
| MJD44H11RLG |
|
Hersteller: onsemi
Description: TRANS NPN 80V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 85MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Description: TRANS NPN 80V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 85MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
auf Bestellung 13711 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.78 EUR |
| 12+ | 1.75 EUR |
| 100+ | 1.17 EUR |
| 500+ | 0.92 EUR |
| MJD44H11T4 |
|
Hersteller: STMicroelectronics
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 16A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Mounting: SMD
Kind of package: reel; tape
Pulsed collector current: 16A
auf Bestellung 1776 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 62+ | 1.38 EUR |
| 86+ | 1 EUR |
| 125+ | 0.68 EUR |
| 147+ | 0.58 EUR |
| 500+ | 0.43 EUR |
| MJD44H11T4 |
|
Hersteller: STMicroelectronics
Description: TRANS NPN 80V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 20 W
Description: TRANS NPN 80V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 20 W
auf Bestellung 22500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.54 EUR |
| 5000+ | 0.49 EUR |
| 7500+ | 0.46 EUR |
| 12500+ | 0.44 EUR |
| 17500+ | 0.43 EUR |
| MJD44H11T4 |
|
Hersteller: STMicroelectronics
Description: TRANS NPN 80V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 20 W
Description: TRANS NPN 80V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 20 W
auf Bestellung 23894 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.09 EUR |
| 16+ | 1.31 EUR |
| 100+ | 0.86 EUR |
| 500+ | 0.67 EUR |
| 1000+ | 0.6 EUR |
| MJD44H11T4 |
|
Hersteller: STMicroelectronics
Bipolar Transistors - BJT NPN Gen Pur Switch
Bipolar Transistors - BJT NPN Gen Pur Switch
auf Bestellung 9270 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.05 EUR |
| 10+ | 1.29 EUR |
| 100+ | 0.84 EUR |
| 500+ | 0.65 EUR |
| 1000+ | 0.6 EUR |
| 2500+ | 0.5 EUR |
| 5000+ | 0.45 EUR |
| MJD44H11T4-A |
|
Hersteller: STMicroelectronics
Description: TRANS NPN 80V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 20 W
Description: TRANS NPN 80V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 10µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 20 W
auf Bestellung 339 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 1.99 EUR |
| 17+ | 1.24 EUR |
| 100+ | 0.81 EUR |
| MJD44H11T4-A |
|
Hersteller: STMicroelectronics
Bipolar Transistors - BJT Automotive-grade low voltage NPN power transistor
Bipolar Transistors - BJT Automotive-grade low voltage NPN power transistor
auf Bestellung 5620 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 1.95 EUR |
| 10+ | 1.21 EUR |
| 100+ | 0.8 EUR |
| 500+ | 0.71 EUR |
| 1000+ | 0.6 EUR |
| 2500+ | 0.54 EUR |
| 5000+ | 0.46 EUR |
| MJD44H11T4G |
|
Hersteller: ONSEMI
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 85MHz
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 80V; 8A; 20W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 8A
Power dissipation: 20W
Case: DPAK
Current gain: 60
Mounting: SMD
Kind of package: reel; tape
Frequency: 85MHz
Application: automotive industry
auf Bestellung 496 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 66+ | 1.3 EUR |
| 84+ | 1.01 EUR |
| 96+ | 0.89 EUR |
| 110+ | 0.77 EUR |
| 130+ | 0.65 EUR |
| 148+ | 0.57 EUR |
| MJD44H11T4G |
|
Hersteller: onsemi
Description: TRANS NPN 80V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 85MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Description: TRANS NPN 80V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 85MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
auf Bestellung 72500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.51 EUR |
| 5000+ | 0.46 EUR |
| MJD44H11T4G |
|
Hersteller: onsemi
Bipolar Transistors - BJT 8A 80V 20W NPN
Bipolar Transistors - BJT 8A 80V 20W NPN
auf Bestellung 28486 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.03 EUR |
| 10+ | 1.27 EUR |
| 100+ | 0.84 EUR |
| 500+ | 0.65 EUR |
| 1000+ | 0.6 EUR |
| 2500+ | 0.5 EUR |
| MJD44H11T4G |
|
Hersteller: onsemi
Description: TRANS NPN 80V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 85MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
Description: TRANS NPN 80V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 85MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.75 W
auf Bestellung 74699 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 2.12 EUR |
| 16+ | 1.32 EUR |
| 100+ | 0.87 EUR |
| 500+ | 0.67 EUR |
| 1000+ | 0.61 EUR |
| MJF44H11G |
|
Hersteller: ONSEMI
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220FP
Current gain: 60
Mounting: THT
Kind of package: tube
Frequency: 50MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 80V; 10A; 50W; TO220FP
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 80V
Collector current: 10A
Power dissipation: 50W
Case: TO220FP
Current gain: 60
Mounting: THT
Kind of package: tube
Frequency: 50MHz
auf Bestellung 469 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 27+ | 3.17 EUR |
| 56+ | 1.54 EUR |
| MJF44H11G |
|
auf Bestellung 140 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 25+ | 3.17 EUR |
| MJF44H11G |
|
Hersteller: onsemi
Description: TRANS NPN 80V 10A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-220FP
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
Description: TRANS NPN 80V 10A TO-220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Frequency - Transition: 50MHz
Supplier Device Package: TO-220FP
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 2 W
auf Bestellung 2107 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.87 EUR |
| 50+ | 2.93 EUR |
| 100+ | 2.64 EUR |
| 500+ | 2.14 EUR |
| 1000+ | 1.99 EUR |
| 2000+ | 1.84 EUR |
| MJF44H11G |
|
Hersteller: onsemi
Bipolar Transistors - BJT 10A 80V 50W NPN
Bipolar Transistors - BJT 10A 80V 50W NPN
auf Bestellung 11871 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 5.34 EUR |
| 10+ | 2.89 EUR |
| 100+ | 2.37 EUR |
| 500+ | 1.92 EUR |
| MJK44H11TWG |
|
Hersteller: onsemi
Bipolar Transistors - BJT NPN BIP PWR XTSR 8A/80V LFPAK56
Bipolar Transistors - BJT NPN BIP PWR XTSR 8A/80V LFPAK56
auf Bestellung 3000 Stücke:
Lieferzeit 136-140 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.83 EUR |
| 10+ | 1.78 EUR |
| 100+ | 1.19 EUR |
| MJPE44H11-QZ |
|
Hersteller: Nexperia USA Inc.
Description: MJPE44H11-Q/SOT1289B/CFP15
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency - Transition: 155MHz
Supplier Device Package: CFP15B
Grade: Automotive
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.65 W
Qualification: AEC-Q101
Description: MJPE44H11-Q/SOT1289B/CFP15
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 175°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Current - Collector Cutoff (Max): 1µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 2A, 1V
Frequency - Transition: 155MHz
Supplier Device Package: CFP15B
Grade: Automotive
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.65 W
Qualification: AEC-Q101
auf Bestellung 238 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 14+ | 1.55 EUR |
| 22+ | 0.95 EUR |
| 100+ | 0.62 EUR |
| MJPE44H11-QZ |
|
Hersteller: Nexperia
Bipolar Transistors - BJT MJPE44H11-Q/SOT1289B/CFP15
Bipolar Transistors - BJT MJPE44H11-Q/SOT1289B/CFP15
auf Bestellung 5174 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 1.51 EUR |
| 10+ | 0.94 EUR |
| 100+ | 0.61 EUR |
| 500+ | 0.55 EUR |
| 1000+ | 0.45 EUR |
| 2500+ | 0.4 EUR |
| 5000+ | 0.36 EUR |
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