Suchergebnisse für "8n50" : > 60

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Neodym Magnet Starke Ringmagnet Ø10x1.5mm Bohrung Ø4mm Ni N38/N50 Menge wählbar
+1
 		Neodym Magnet Starke Ringmagnet Ø10x1.5mm Bohrung Ø4mm Ni N38/N50 Menge wählbar
Produktcode: 23502
4 zu Favoriten hinzufügen Lieblingsprodukt
HHII magnetickhsduidf.pdf description Gehäuse, Halter, Montage- und Installationselemente > Magnete
Material: N50, NdFeB, Ni+Cu+Ni (Nickel)
Form und Abmessungen: Ring, D au?en.=10mm, D innen.=4mm, h=1,5mm
Тип: Неодимовий
Форма: Диск (шайба)
Зусилля на відрив (прибл.): 0,5 kg
8505 11 00 00
verfügbar: 255 St.
92 St. - stock Köln
163 St. - lieferbar in 3-4 Wochen
erwartet: 400 St.
400 St. - erwartet 28.10.2026
1+0.24 EUR
10+0.19 EUR
100+0.13 EUR
1000+0.12 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SIHF18N50D-E3 SIHF18N50D-E3
Produktcode: 188008
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Vishay sihf18n50d.pdf Transistoren > MOSFET N-CH
Gehäuse: TO-220
Uds,V: 550 V
Idd,A: 18 A
Rds(on), Ohm: 0,28 Ohm
Ciss, pF/Qg, nC: 1500/38
JHGF: THT
auf Bestellung 4 St.:
Lieferzeit 21-28 Tag (e)
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SPP08N50C3 SPP08N50C3
Produktcode: 113412
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Infineon sp000681038.pdf Transistoren > MOSFET N-CH
Gehäuse: TO-220
Uds,V: 500 V
Idd,A: 7 А
Rds(on), Ohm: 0,6 Ohm
Ciss, pF/Qg, nC: 750/3
JHGF: THT
auf Bestellung 28 St.:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
8N50E PH 09+
auf Bestellung 5030 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
AOT8N50 AOT8N50 ALPHA & OMEGA SEMICONDUCTOR AOT8N50.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.6A; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.6A
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 23.6nC
Kind of channel: enhancement
auf Bestellung 631 Stücke:
Lieferzeit 14-21 Tag (e)
52+1.4 EUR
95+0.76 EUR
100+0.72 EUR
Mindestbestellmenge: 52
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BD3238N5050AHF TTM Technologies 0EF2FC6EC31E209F664281AAD064DF417C2BB7C21DC841385B6381F0825203A8.pdf Audio Transformers / Signal Transformers
auf Bestellung 7900 Stücke:
Lieferzeit 10-14 Tag (e)
4+0.86 EUR
10+0.73 EUR
100+0.7 EUR
250+0.67 EUR
500+0.65 EUR
1000+0.63 EUR
2500+0.42 EUR
Mindestbestellmenge: 4
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BD3238N5050AHF BD3238N5050AHF TTM Technologies, Inc. BD3238N5050AHF.pdf Description: BALUN 50 / 50OHM
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Impedance - Unbalanced/Balanced: 50 / 50Ohm
Insertion Loss (Max): 0.9dB
Return Loss (Min): 12dB
Phase Difference: 3°
Part Status: Active
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
4000+0.42 EUR
8000+0.37 EUR
Mindestbestellmenge: 4000
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BD3238N5050AHF BD3238N5050AHF TTM Technologies, Inc. BD3238N5050AHF.pdf Description: BALUN 50 / 50OHM
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Impedance - Unbalanced/Balanced: 50 / 50Ohm
Insertion Loss (Max): 0.9dB
Return Loss (Min): 12dB
Phase Difference: 3°
Part Status: Active
auf Bestellung 21365 Stücke:
Lieferzeit 10-14 Tag (e)
21+0.84 EUR
23+0.78 EUR
25+0.75 EUR
50+0.73 EUR
100+0.7 EUR
250+0.68 EUR
500+0.66 EUR
1000+0.64 EUR
Mindestbestellmenge: 21
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BXP18N50F BXP18N50F BRIDGELUX BXP18N50.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 72A; 42.8W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 72A
Power dissipation: 42.8W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 701 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.82 EUR
50+1.45 EUR
56+1.3 EUR
100+1.09 EUR
250+0.98 EUR
500+0.86 EUR
Mindestbestellmenge: 40
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CHV1808N500101KCT CHV1808N500101KCT Cal-Chip Electronics, Inc. CHV-Series-051925.pdf Description: HVCAP1808 COG 100PF 10% 500V
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Features: High Voltage
Voltage - Rated: 500V
Package / Case: 1808 (4520 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.079" W (4.60mm x 2.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Thickness (Max): 0.087" (2.20mm)
Capacitance: 100 pF
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.55 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
CHV1808N500103KXT CHV1808N500103KXT Cal-Chip Electronics, Inc. CHV-Series.pdf Description: HVCAP1808 X7R .01UF 10% 500V
Packaging: Cut Tape (CT)
Tolerance: ±10%
Features: High Voltage
Voltage - Rated: 500V
Package / Case: 1808 (4520 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.181" L x 0.079" W (4.60mm x 2.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.087" (2.20mm)
Capacitance: 10000 pF
auf Bestellung 1988 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.24 EUR
12+1.48 EUR
50+1.18 EUR
100+1.09 EUR
500+0.93 EUR
1000+0.88 EUR
Mindestbestellmenge: 8
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CHV1808N500221JCT CHV1808N500221JCT Cal-Chip Electronics, Inc. CHV-Series.pdf Description: HVCAP1808 COG 220PF 5% 500V
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Features: High Voltage
Voltage - Rated: 500V
Package / Case: 1808 (4520 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.079" W (4.60mm x 2.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.071" (1.80mm)
Capacitance: 220 pF
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+0.74 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
CHV1808N500330JCT CHV1808N500330JCT Cal-Chip Electronics, Inc. CHV-Series-051925.pdf Description: HVCAP1808 COG 33PF 5% 500V
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Features: High Voltage
Voltage - Rated: 500V
Package / Case: 1808 (4520 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.079" W (4.60mm x 2.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Thickness (Max): 0.087" (2.20mm)
Capacitance: 33 pF
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+0.57 EUR
Mindestbestellmenge: 2000
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CNX718N50005T CNX718N50005T VCC CNX718rev3.pdf LED Panel Mount Indicators PANEL MNT INDICATOR 18MM GRN 5V TAB
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
1+36.48 EUR
10+25.78 EUR
100+23.71 EUR
500+23.65 EUR
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CNX718N50005T CNX718N50005T Visual Communications Company - VCC CNX718rev3.pdf Description: LED PNL IND GRN FRESNEL 18.50MM
Packaging: Bulk
Voltage: 5V
Type: LED
Millicandela Rating: 2400mcd
Termination Style: Quick Connect - 0.187" (4.7mm)
Lens Color: Clear
Ratings: DC
Panel Cutout Dimensions: 0.69" (17.53mm)
Lens Transparency: Fresnel
Lamp Color: Green
Panel Cutout Shape: Round
Lens Style: Round with Domed Top
Lens Size: 18.50mm Dia
auf Bestellung 170 Stücke:
Lieferzeit 10-14 Tag (e)
1+38.74 EUR
10+31.04 EUR
100+26.58 EUR
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CNX718N50005W CNX718N50005W Visual Communications Company - VCC CNX718rev3.pdf Description: LED PNL IND GRN FRESNEL 18.50MM
Packaging: Bulk
Voltage: 5V
Type: LED
Millicandela Rating: 2400mcd
Termination Style: Wire Leads - 6" (152.40mm)
Lens Color: Clear
Ratings: DC
Panel Cutout Dimensions: 0.69" (17.53mm)
Lens Transparency: Fresnel
Lamp Color: Green
Panel Cutout Shape: Round
Lens Style: Round with Domed Top
Lens Size: 18.50mm Dia
auf Bestellung 70 Stücke:
Lieferzeit 10-14 Tag (e)
1+38.74 EUR
10+31.04 EUR
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CNX718N500120W CNX718N500120W Visual Communications Company - VCC CNX718rev3.pdf Description: LED PNL IND GRN FRESNEL 18.50MM
Packaging: Bulk
Voltage: 120V
Type: LED
Millicandela Rating: 2400mcd
Termination Style: Wire Leads - 6" (152.40mm)
Lens Color: Clear
Ratings: AC
Panel Cutout Dimensions: 0.69" (17.53mm)
Lens Transparency: Fresnel
Lamp Color: Green
Panel Cutout Shape: Round
Lens Style: Round with Domed Top
Lens Size: 18.50mm Dia
auf Bestellung 115 Stücke:
Lieferzeit 10-14 Tag (e)
1+38.74 EUR
10+31.04 EUR
100+26.58 EUR
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CNX718N50012T CNX718N50012T Visual Communications Company - VCC CNX718rev3.pdf Description: LED PNL IND GRN FRESNEL 18.50MM
Packaging: Bulk
Voltage: 12V
Type: LED
Millicandela Rating: 2400mcd
Termination Style: Quick Connect - 0.187" (4.7mm)
Lens Color: Clear
Ratings: DC
Panel Cutout Dimensions: 0.69" (17.53mm)
Lens Transparency: Fresnel
Lamp Color: Green
Panel Cutout Shape: Round
Lens Style: Round with Domed Top
Lens Size: 18.50mm Dia
auf Bestellung 188 Stücke:
Lieferzeit 10-14 Tag (e)
1+38.74 EUR
10+31.04 EUR
100+26.58 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CNX718N50012W CNX718N50012W Visual Communications Company - VCC CNX718rev3.pdf Description: LED PNL IND GRN FRESNEL 18.50MM
Packaging: Bulk
Voltage: 12V
Type: LED
Millicandela Rating: 2400mcd
Termination Style: Wire Leads - 6" (152.40mm)
Lens Color: Clear
Ratings: DC
Panel Cutout Dimensions: 0.69" (17.53mm)
Lens Transparency: Fresnel
Lamp Color: Green
Panel Cutout Shape: Round
Lens Style: Round with Domed Top
Lens Size: 18.50mm Dia
auf Bestellung 88 Stücke:
Lieferzeit 10-14 Tag (e)
1+38.74 EUR
10+31.04 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CNX718N50028T CNX718N50028T Visual Communications Company - VCC CNX718rev3.pdf Description: LED PNL IND GRN FRESNEL 18.50MM
Packaging: Bulk
Voltage: 28V
Type: LED
Millicandela Rating: 2400mcd
Termination Style: Quick Connect - 0.187" (4.7mm)
Lens Color: Clear
Ratings: DC
Panel Cutout Dimensions: 0.69" (17.53mm)
Lens Transparency: Fresnel
Lamp Color: Green
Panel Cutout Shape: Round
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 18.50mm Dia
auf Bestellung 65 Stücke:
Lieferzeit 10-14 Tag (e)
1+38.74 EUR
10+31.04 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CNX718N50028W CNX718N50028W Visual Communications Company - VCC CNX718rev3.pdf Description: LED PNL IND GRN FRESNEL 18.50MM
Packaging: Bulk
Voltage: 28V
Type: LED
Millicandela Rating: 2400mcd
Termination Style: Wire Leads - 6" (152.40mm)
Lens Color: Clear
Ratings: DC
Panel Cutout Dimensions: 0.69" (17.53mm)
Lens Transparency: Fresnel
Lamp Color: Green
Panel Cutout Shape: Round
Lens Style: Round with Domed Top
Lens Size: 18.50mm Dia
auf Bestellung 131 Stücke:
Lieferzeit 10-14 Tag (e)
1+38.74 EUR
10+31.04 EUR
100+26.58 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FDA18N50 FDA18N50 Fairchild Semiconductor fda18n50-d.pdf Description: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 265mOhm @ 9.5A, 10V
Power Dissipation (Max): 239W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 25 V
auf Bestellung 1564 Stücke:
Lieferzeit 10-14 Tag (e)
156+2.89 EUR
Mindestbestellmenge: 156
Im Einkaufswagen  Stück im Wert von  UAH
FDA28N50 FDA28N50 ONSEMI fda28n50-d.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 17A; Idm: 112A; 310W; TO3PN
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 17A
Pulsed drain current: 112A
Power dissipation: 310W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 155mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)
13+5.81 EUR
19+3.89 EUR
30+3.52 EUR
Mindestbestellmenge: 13
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FDA28N50 FDA28N50 onsemi fda28n50-d.pdf Description: MOSFET N-CH 500V 28A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 14A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5140 pF @ 25 V
auf Bestellung 303 Stücke:
Lieferzeit 10-14 Tag (e)
2+8.92 EUR
30+5.07 EUR
120+4.21 EUR
Mindestbestellmenge: 2
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FDA28N50 FDA28N50 onsemi fda28n50-d.pdf MOSFETs UniFET 500V
auf Bestellung 1399 Stücke:
Lieferzeit 10-14 Tag (e)
1+10.61 EUR
10+6.16 EUR
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FDP18N50 FDP18N50 ONSEMI FDP18N50.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 235W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 235W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 991 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.95 EUR
23+3.25 EUR
34+2.14 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
FDP18N50 FDP18N50 ON-Semiconductor info-tfdp18n50.pdf Transistor N-Channel MOSFET; 500V; 30V; 265mOhm; 18A; 235W; -55°C ~ 150°C; FDP18N50 TFDP18n50
Anzahl je Verpackung: 5 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
10+5.13 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
FDP18N50 FDP18N50 ON-Semiconductor info-tfdp18n50.pdf Transistor N-Channel MOSFET; 500V; 30V; 265mOhm; 18A; 235W; -55°C ~ 150°C; FDP18N50 TFDP18n50
Anzahl je Verpackung: 5 Stücke
auf Bestellung 17 Stücke:
Lieferzeit 7-14 Tag (e)
10+5.13 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
FDP18N50 FDP18N50 onsemi FDPF18N50T-D.PDF Description: MOSFET N-CH 500V 18A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 265mOhm @ 9A, 10V
Power Dissipation (Max): 235W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 25 V
auf Bestellung 6495 Stücke:
Lieferzeit 10-14 Tag (e)
3+5.9 EUR
50+3 EUR
100+2.71 EUR
500+2.22 EUR
1000+2.07 EUR
2000+1.98 EUR
Mindestbestellmenge: 3
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FDP18N50 FDP18N50 onsemi FDPF18N50T-D.PDF MOSFETs 500V N-Channel PowerTrench MOSFET
auf Bestellung 2229 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.97 EUR
10+3.04 EUR
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FDPF18N50 FDPF18N50 ONSEMI FDP18N50.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
4+17.88 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
FDPF18N50 FDPF18N50 ON-Semiconductor info-tfdpf18n50.pdf Transistor N-Channel MOSFET; 500V; 30V; 265mOhm; 18A; 38,5W; -55°C ~ 150°C; FDPF18N50 TFDPF18n50
Anzahl je Verpackung: 3 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)
6+8.89 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
FDPF18N50 FDPF18N50 onsemi fdpf18n50t-d.pdf MOSFETs 500V N-CH MOSFET
auf Bestellung 1483 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.3 EUR
10+3.22 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FDPF18N50 FDPF18N50 onsemi fdpf18n50t-d.pdf Description: MOSFET N-CH 500V 18A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 265mOhm @ 9A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 25 V
auf Bestellung 5373 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.23 EUR
50+3.18 EUR
100+2.88 EUR
500+2.37 EUR
1000+2.2 EUR
2000+2.14 EUR
Mindestbestellmenge: 3
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FDPF18N50T FDPF18N50T ONSEMI FDPF18N50T-D.PDF Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 38 Stücke:
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FDPF18N50T FDPF18N50T onsemi FDPF18N50T-D.PDF Description: MOSFET N-CH 500V 18A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 265mOhm @ 9A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 25 V
auf Bestellung 412 Stücke:
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FDPF18N50T FDPF18N50T onsemi FDPF18N50T-D.PDF MOSFETs 500V N-Channel PowerTrench MOSFET
auf Bestellung 1363 Stücke:
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1+7.23 EUR
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FDPF8N50NZU FDPF8N50NZU Fairchild Semiconductor ONSM-S-A0003584311-1.pdf?t.download=true&u=5oefqw Description: POWER FIELD-EFFECT TRANSISTOR, 6
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 25 V
auf Bestellung 3685 Stücke:
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FQA18N50V2 FQA18N50V2 Fairchild Semiconductor FAIRS19283-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 500V 20A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 265mOhm @ 10A, 10V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
auf Bestellung 380 Stücke:
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FQA28N50-ON FQA28N50-ON onsemi FAIR-S-A0002366321-1.pdf?t.download=true&u=5oefqw Description: 28.4A, 500V, 0.16OHM, N-CHANNEL
Packaging: Bulk
Part Status: Active
auf Bestellung 4863 Stücke:
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FQH18N50V2 FQH18N50V2 Fairchild Semiconductor FAIRS43003-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 500V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 265mOhm @ 10A, 10V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
auf Bestellung 4058 Stücke:
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FQP18N50V2 FQP18N50V2 Fairchild Semiconductor FAIRS25293-1.pdf?t.download=true&u=5oefqw description Description: MOSFET N-CH 500V 18A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 265mOhm @ 9A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
auf Bestellung 532 Stücke:
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FQPF18N50V2SDTU FQPF18N50V2SDTU Fairchild Semiconductor FAIRS25293-1.pdf?t.download=true&u=5oefqw Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tj)
Rds On (Max) @ Id, Vgs: 265mOhm @ 9A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
auf Bestellung 4845 Stücke:
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IXFK48N50 IXFK48N50 IXYS Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-4-N50-Datasheet.PDF?assetguid=887754DE-8CB1-4B0F-B5B9-F6A862E6ADE4 Description: MOSFET N-CH 500V 48A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 24A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
auf Bestellung 1351 Stücke:
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IXFK78N50P3 IXFK78N50P3 IXYS IXFK(X)78N50P3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 78A; 1130W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 78A
Power dissipation: 1.13kW
Case: TO264
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 6 Stücke:
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IXFK78N50P3 IXFK78N50P3 IXYS DS100313AIXFKFX78N50P3.pdf Description: MOSFET N-CH 500V 78A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 500mA, 10V
Power Dissipation (Max): 1130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 25 V
auf Bestellung 760 Stücke:
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IXFK78N50P3 IXFK78N50P3 IXYS Littelfuse_Discrete_MOSFETs_N_Channel_HiPerFETs_IXF_78N50P3_Datasheet__1_.pdf MOSFETs 500V 78A 0.068Ohm PolarP3 Power MOSFET
auf Bestellung 3 Stücke:
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1+43.6 EUR
10+29.11 EUR
100+28.92 EUR
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IXFK98N50P3 IXFK98N50P3 IXYS Littelfuse_Discrete_MOSFETs_N_Channel_HiPerFETs_IXF_98N50P3_Datasheet.PDF MOSFETs 500V 98A 0.05Ohm PolarP3 Power MOSFET
auf Bestellung 32 Stücke:
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1+37.66 EUR
10+25.01 EUR
100+23.6 EUR
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IXFN48N50 IXFN48N50 IXYS Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-4-N50-Datasheet.PDF?assetguid=887754DE-8CB1-4B0F-B5B9-F6A862E6ADE4 Description: MOSFET N-CH 500V 48A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
auf Bestellung 300 Stücke:
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1+61.2 EUR
10+51.28 EUR
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IXFN48N50 IXFN48N50 IXYS Littelfuse_Discrete_MOSFETs_N_Channel_HiPerFETs_IXF_4_N50_Datasheet.PDF MOSFET Modules 500V 48A
auf Bestellung 1350 Stücke:
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1+61.92 EUR
10+53.1 EUR
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IXFX78N50P3 IXFX78N50P3 IXYS Littelfuse_Discrete_MOSFETs_N_Channel_HiPerFETs_IXF_78N50P3_Datasheet__1_.pdf MOSFETs 500V 78A 0.068Ohm PolarP3 Power MOSFET
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10+20.29 EUR
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IXFX98N50P3 IXFX98N50P3 IXYS DS100317BIXFKFX98N50P3.pdf Description: MOSFET N-CH 500V 98A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 500mA, 10V
Power Dissipation (Max): 1300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
auf Bestellung 619 Stücke:
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IXTA08N50D2 IXTA08N50D2 IXYS Littelfuse_Discrete_MOSFETs_N_Channel_Depletion_Mode_IXT_08N50_Datasheet.PDF MOSFETs N-CH MOSFETS (D2) 500V 800MA
auf Bestellung 5 Stücke:
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IXTA08N50D2 IXTA08N50D2 IXYS Littelfuse-Discrete-MOSFETs-N-Channel-Depletion-Mode-IXT-08N50-Datasheet.PDF?assetguid=A427D242-A59C-4809-AE1D-1E1F10E2A329 Description: MOSFET N-CH 500V 800MA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 4.6Ohm @ 400mA, 0V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-263AA
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V
auf Bestellung 158 Stücke:
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IXTP08N50D2 IXTP08N50D2 IXYS IXTA(P,Y)08N50D2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO220AB; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO220AB
On-state resistance: 4.6Ω
Mounting: THT
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
auf Bestellung 262 Stücke:
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IXTP08N50D2 IXTP08N50D2 IXYS Littelfuse-Discrete-MOSFETs-N-Channel-Depletion-Mode-IXT-08N50-Datasheet.PDF?assetguid=A427D242-A59C-4809-AE1D-1E1F10E2A329 Description: MOSFET N-CH 500V 800MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 4.6Ohm @ 400mA, 0V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-220-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V
auf Bestellung 1550 Stücke:
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IXTP08N50D2 IXTP08N50D2 IXYS Littelfuse_Discrete_MOSFETs_N_Channel_Depletion_Mode_IXT_08N50_Datasheet.PDF MOSFETs N-CH MOSFETS 500V 800MA
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IXTY08N50D2 IXTY08N50D2 IXYS Littelfuse_Discrete_MOSFETs_N_Channel_Depletion_Mode_IXT_08N50_Datasheet.PDF MOSFETs N-CH MOSFETS 500V 800MA
auf Bestellung 21705 Stücke:
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IXTY08N50D2 IXTY08N50D2 IXYS Littelfuse-Discrete-MOSFETs-N-Channel-Depletion-Mode-IXT-08N50-Datasheet.PDF?assetguid=A427D242-A59C-4809-AE1D-1E1F10E2A329 Description: MOSFET N-CH 500V 800MA TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 4.6Ohm @ 400mA, 0V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V
auf Bestellung 2130 Stücke:
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IXTY08N50D2-TRL IXTY08N50D2-TRL IXYS Littelfuse_Discrete_MOSFETs_N_Channel_Depletion_Mode_IXT_08N50_Datasheet.PDF MOSFET Modules DISCRETE SEMICONDUCTOR MODULES
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Neodym Magnet Starke Ringmagnet Ø10x1.5mm Bohrung Ø4mm Ni N38/N50 Menge wählbar
Produktcode: 23502
4 zu Favoriten hinzufügen Lieblingsprodukt
description magnetickhsduidf.pdf
Neodym Magnet Starke Ringmagnet Ø10x1.5mm Bohrung Ø4mm Ni N38/N50 Menge wählbar
+1
Hersteller: HHII
Gehäuse, Halter, Montage- und Installationselemente > Magnete
Material: N50, NdFeB, Ni+Cu+Ni (Nickel)
Form und Abmessungen: Ring, D au?en.=10mm, D innen.=4mm, h=1,5mm
Тип: Неодимовий
Форма: Диск (шайба)
Зусилля на відрив (прибл.): 0,5 kg
8505 11 00 00
verfügbar: 255 St.
92 St. - stock Köln
163 St. - lieferbar in 3-4 Wochen
erwartet: 400 St.
400 St. - erwartet 28.10.2026
Anzahl Preis
1+0.24 EUR
10+0.19 EUR
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SIHF18N50D-E3
Produktcode: 188008
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sihf18n50d.pdf
SIHF18N50D-E3
Hersteller: Vishay
Transistoren > MOSFET N-CH
Gehäuse: TO-220
Uds,V: 550 V
Idd,A: 18 A
Rds(on), Ohm: 0,28 Ohm
Ciss, pF/Qg, nC: 1500/38
JHGF: THT
auf Bestellung 4 St.:
Lieferzeit 21-28 Tag (e)
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SPP08N50C3
Produktcode: 113412
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sp000681038.pdf
SPP08N50C3
Hersteller: Infineon
Transistoren > MOSFET N-CH
Gehäuse: TO-220
Uds,V: 500 V
Idd,A: 7 А
Rds(on), Ohm: 0,6 Ohm
Ciss, pF/Qg, nC: 750/3
JHGF: THT
auf Bestellung 28 St.:
Lieferzeit 21-28 Tag (e)
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8N50E
Hersteller: PH
09+
auf Bestellung 5030 Stücke:
Lieferzeit 21-28 Tag (e)
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AOT8N50 AOT8N50.pdf
AOT8N50
Hersteller: ALPHA & OMEGA SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 5.6A; TO220
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5.6A
Case: TO220
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: THT
Gate charge: 23.6nC
Kind of channel: enhancement
auf Bestellung 631 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
52+1.4 EUR
95+0.76 EUR
100+0.72 EUR
Mindestbestellmenge: 52
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BD3238N5050AHF 0EF2FC6EC31E209F664281AAD064DF417C2BB7C21DC841385B6381F0825203A8.pdf
Hersteller: TTM Technologies
Audio Transformers / Signal Transformers
auf Bestellung 7900 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.86 EUR
10+0.73 EUR
100+0.7 EUR
250+0.67 EUR
500+0.65 EUR
1000+0.63 EUR
2500+0.42 EUR
Mindestbestellmenge: 4
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BD3238N5050AHF BD3238N5050AHF.pdf
BD3238N5050AHF
Hersteller: TTM Technologies, Inc.
Description: BALUN 50 / 50OHM
Packaging: Tape & Reel (TR)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Impedance - Unbalanced/Balanced: 50 / 50Ohm
Insertion Loss (Max): 0.9dB
Return Loss (Min): 12dB
Phase Difference: 3°
Part Status: Active
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.42 EUR
8000+0.37 EUR
Mindestbestellmenge: 4000
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BD3238N5050AHF BD3238N5050AHF.pdf
BD3238N5050AHF
Hersteller: TTM Technologies, Inc.
Description: BALUN 50 / 50OHM
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, No Lead
Mounting Type: Surface Mount
Impedance - Unbalanced/Balanced: 50 / 50Ohm
Insertion Loss (Max): 0.9dB
Return Loss (Min): 12dB
Phase Difference: 3°
Part Status: Active
auf Bestellung 21365 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.84 EUR
23+0.78 EUR
25+0.75 EUR
50+0.73 EUR
100+0.7 EUR
250+0.68 EUR
500+0.66 EUR
1000+0.64 EUR
Mindestbestellmenge: 21
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BXP18N50F BXP18N50.pdf
BXP18N50F
Hersteller: BRIDGELUX
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 72A; 42.8W; TO220F
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 12A
Pulsed drain current: 72A
Power dissipation: 42.8W
Case: TO220F
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 701 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.82 EUR
50+1.45 EUR
56+1.3 EUR
100+1.09 EUR
250+0.98 EUR
500+0.86 EUR
Mindestbestellmenge: 40
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CHV1808N500101KCT CHV-Series-051925.pdf
CHV1808N500101KCT
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP1808 COG 100PF 10% 500V
Packaging: Tape & Reel (TR)
Tolerance: ±10%
Features: High Voltage
Voltage - Rated: 500V
Package / Case: 1808 (4520 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.079" W (4.60mm x 2.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Thickness (Max): 0.087" (2.20mm)
Capacitance: 100 pF
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.55 EUR
Mindestbestellmenge: 3000
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CHV1808N500103KXT CHV-Series.pdf
CHV1808N500103KXT
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP1808 X7R .01UF 10% 500V
Packaging: Cut Tape (CT)
Tolerance: ±10%
Features: High Voltage
Voltage - Rated: 500V
Package / Case: 1808 (4520 Metric)
Temperature Coefficient: X7R
Size / Dimension: 0.181" L x 0.079" W (4.60mm x 2.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.087" (2.20mm)
Capacitance: 10000 pF
auf Bestellung 1988 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.24 EUR
12+1.48 EUR
50+1.18 EUR
100+1.09 EUR
500+0.93 EUR
1000+0.88 EUR
Mindestbestellmenge: 8
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CHV1808N500221JCT CHV-Series.pdf
CHV1808N500221JCT
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP1808 COG 220PF 5% 500V
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Features: High Voltage
Voltage - Rated: 500V
Package / Case: 1808 (4520 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.079" W (4.60mm x 2.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: SMPS Filtering
Thickness (Max): 0.071" (1.80mm)
Capacitance: 220 pF
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.74 EUR
Mindestbestellmenge: 2000
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CHV1808N500330JCT CHV-Series-051925.pdf
CHV1808N500330JCT
Hersteller: Cal-Chip Electronics, Inc.
Description: HVCAP1808 COG 33PF 5% 500V
Packaging: Tape & Reel (TR)
Tolerance: ±5%
Features: High Voltage
Voltage - Rated: 500V
Package / Case: 1808 (4520 Metric)
Temperature Coefficient: C0G, NP0
Size / Dimension: 0.181" L x 0.079" W (4.60mm x 2.00mm)
Mounting Type: Surface Mount, MLCC
Operating Temperature: -55°C ~ 125°C
Applications: General Purpose
Thickness (Max): 0.087" (2.20mm)
Capacitance: 33 pF
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.57 EUR
Mindestbestellmenge: 2000
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CNX718N50005T CNX718rev3.pdf
CNX718N50005T
Hersteller: VCC
LED Panel Mount Indicators PANEL MNT INDICATOR 18MM GRN 5V TAB
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+36.48 EUR
10+25.78 EUR
100+23.71 EUR
500+23.65 EUR
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CNX718N50005T CNX718rev3.pdf
CNX718N50005T
Hersteller: Visual Communications Company - VCC
Description: LED PNL IND GRN FRESNEL 18.50MM
Packaging: Bulk
Voltage: 5V
Type: LED
Millicandela Rating: 2400mcd
Termination Style: Quick Connect - 0.187" (4.7mm)
Lens Color: Clear
Ratings: DC
Panel Cutout Dimensions: 0.69" (17.53mm)
Lens Transparency: Fresnel
Lamp Color: Green
Panel Cutout Shape: Round
Lens Style: Round with Domed Top
Lens Size: 18.50mm Dia
auf Bestellung 170 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+38.74 EUR
10+31.04 EUR
100+26.58 EUR
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CNX718N50005W CNX718rev3.pdf
CNX718N50005W
Hersteller: Visual Communications Company - VCC
Description: LED PNL IND GRN FRESNEL 18.50MM
Packaging: Bulk
Voltage: 5V
Type: LED
Millicandela Rating: 2400mcd
Termination Style: Wire Leads - 6" (152.40mm)
Lens Color: Clear
Ratings: DC
Panel Cutout Dimensions: 0.69" (17.53mm)
Lens Transparency: Fresnel
Lamp Color: Green
Panel Cutout Shape: Round
Lens Style: Round with Domed Top
Lens Size: 18.50mm Dia
auf Bestellung 70 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+38.74 EUR
10+31.04 EUR
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CNX718N500120W CNX718rev3.pdf
CNX718N500120W
Hersteller: Visual Communications Company - VCC
Description: LED PNL IND GRN FRESNEL 18.50MM
Packaging: Bulk
Voltage: 120V
Type: LED
Millicandela Rating: 2400mcd
Termination Style: Wire Leads - 6" (152.40mm)
Lens Color: Clear
Ratings: AC
Panel Cutout Dimensions: 0.69" (17.53mm)
Lens Transparency: Fresnel
Lamp Color: Green
Panel Cutout Shape: Round
Lens Style: Round with Domed Top
Lens Size: 18.50mm Dia
auf Bestellung 115 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+38.74 EUR
10+31.04 EUR
100+26.58 EUR
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CNX718N50012T CNX718rev3.pdf
CNX718N50012T
Hersteller: Visual Communications Company - VCC
Description: LED PNL IND GRN FRESNEL 18.50MM
Packaging: Bulk
Voltage: 12V
Type: LED
Millicandela Rating: 2400mcd
Termination Style: Quick Connect - 0.187" (4.7mm)
Lens Color: Clear
Ratings: DC
Panel Cutout Dimensions: 0.69" (17.53mm)
Lens Transparency: Fresnel
Lamp Color: Green
Panel Cutout Shape: Round
Lens Style: Round with Domed Top
Lens Size: 18.50mm Dia
auf Bestellung 188 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+38.74 EUR
10+31.04 EUR
100+26.58 EUR
Im Einkaufswagen  Stück im Wert von  UAH
CNX718N50012W CNX718rev3.pdf
CNX718N50012W
Hersteller: Visual Communications Company - VCC
Description: LED PNL IND GRN FRESNEL 18.50MM
Packaging: Bulk
Voltage: 12V
Type: LED
Millicandela Rating: 2400mcd
Termination Style: Wire Leads - 6" (152.40mm)
Lens Color: Clear
Ratings: DC
Panel Cutout Dimensions: 0.69" (17.53mm)
Lens Transparency: Fresnel
Lamp Color: Green
Panel Cutout Shape: Round
Lens Style: Round with Domed Top
Lens Size: 18.50mm Dia
auf Bestellung 88 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+38.74 EUR
10+31.04 EUR
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CNX718N50028T CNX718rev3.pdf
CNX718N50028T
Hersteller: Visual Communications Company - VCC
Description: LED PNL IND GRN FRESNEL 18.50MM
Packaging: Bulk
Voltage: 28V
Type: LED
Millicandela Rating: 2400mcd
Termination Style: Quick Connect - 0.187" (4.7mm)
Lens Color: Clear
Ratings: DC
Panel Cutout Dimensions: 0.69" (17.53mm)
Lens Transparency: Fresnel
Lamp Color: Green
Panel Cutout Shape: Round
Part Status: Active
Lens Style: Round with Domed Top
Lens Size: 18.50mm Dia
auf Bestellung 65 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+38.74 EUR
10+31.04 EUR
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CNX718N50028W CNX718rev3.pdf
CNX718N50028W
Hersteller: Visual Communications Company - VCC
Description: LED PNL IND GRN FRESNEL 18.50MM
Packaging: Bulk
Voltage: 28V
Type: LED
Millicandela Rating: 2400mcd
Termination Style: Wire Leads - 6" (152.40mm)
Lens Color: Clear
Ratings: DC
Panel Cutout Dimensions: 0.69" (17.53mm)
Lens Transparency: Fresnel
Lamp Color: Green
Panel Cutout Shape: Round
Lens Style: Round with Domed Top
Lens Size: 18.50mm Dia
auf Bestellung 131 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+38.74 EUR
10+31.04 EUR
100+26.58 EUR
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FDA18N50 fda18n50-d.pdf
FDA18N50
Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 265mOhm @ 9.5A, 10V
Power Dissipation (Max): 239W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 25 V
auf Bestellung 1564 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
156+2.89 EUR
Mindestbestellmenge: 156
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FDA28N50 fda28n50-d.pdf
FDA28N50
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 17A; Idm: 112A; 310W; TO3PN
Type of transistor: N-MOSFET
Technology: DMOS; UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 17A
Pulsed drain current: 112A
Power dissipation: 310W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 155mΩ
Mounting: THT
Gate charge: 105nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 53 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
13+5.81 EUR
19+3.89 EUR
30+3.52 EUR
Mindestbestellmenge: 13
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FDA28N50 fda28n50-d.pdf
FDA28N50
Hersteller: onsemi
Description: MOSFET N-CH 500V 28A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
Rds On (Max) @ Id, Vgs: 155mOhm @ 14A, 10V
Power Dissipation (Max): 310W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3PN
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5140 pF @ 25 V
auf Bestellung 303 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+8.92 EUR
30+5.07 EUR
120+4.21 EUR
Mindestbestellmenge: 2
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FDA28N50 fda28n50-d.pdf
FDA28N50
Hersteller: onsemi
MOSFETs UniFET 500V
auf Bestellung 1399 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+10.61 EUR
10+6.16 EUR
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FDP18N50 FDP18N50.pdf
FDP18N50
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 235W; TO220AB
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 235W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 991 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.95 EUR
23+3.25 EUR
34+2.14 EUR
Mindestbestellmenge: 19
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FDP18N50 info-tfdp18n50.pdf
FDP18N50
Hersteller: ON-Semiconductor
Transistor N-Channel MOSFET; 500V; 30V; 265mOhm; 18A; 235W; -55°C ~ 150°C; FDP18N50 TFDP18n50
Anzahl je Verpackung: 5 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
10+5.13 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
FDP18N50 info-tfdp18n50.pdf
FDP18N50
Hersteller: ON-Semiconductor
Transistor N-Channel MOSFET; 500V; 30V; 265mOhm; 18A; 235W; -55°C ~ 150°C; FDP18N50 TFDP18n50
Anzahl je Verpackung: 5 Stücke
auf Bestellung 17 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
10+5.13 EUR
Mindestbestellmenge: 10
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FDP18N50 FDPF18N50T-D.PDF
FDP18N50
Hersteller: onsemi
Description: MOSFET N-CH 500V 18A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 265mOhm @ 9A, 10V
Power Dissipation (Max): 235W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 25 V
auf Bestellung 6495 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+5.9 EUR
50+3 EUR
100+2.71 EUR
500+2.22 EUR
1000+2.07 EUR
2000+1.98 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
FDP18N50 FDPF18N50T-D.PDF
FDP18N50
Hersteller: onsemi
MOSFETs 500V N-Channel PowerTrench MOSFET
auf Bestellung 2229 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.97 EUR
10+3.04 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FDPF18N50 FDP18N50.pdf
FDPF18N50
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Gate charge: 60nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+17.88 EUR
Mindestbestellmenge: 4
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FDPF18N50 info-tfdpf18n50.pdf
FDPF18N50
Hersteller: ON-Semiconductor
Transistor N-Channel MOSFET; 500V; 30V; 265mOhm; 18A; 38,5W; -55°C ~ 150°C; FDPF18N50 TFDPF18n50
Anzahl je Verpackung: 3 Stücke
auf Bestellung 6 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
6+8.89 EUR
Mindestbestellmenge: 6
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FDPF18N50 fdpf18n50t-d.pdf
FDPF18N50
Hersteller: onsemi
MOSFETs 500V N-CH MOSFET
auf Bestellung 1483 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.3 EUR
10+3.22 EUR
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FDPF18N50 fdpf18n50t-d.pdf
FDPF18N50
Hersteller: onsemi
Description: MOSFET N-CH 500V 18A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 265mOhm @ 9A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 25 V
auf Bestellung 5373 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.23 EUR
50+3.18 EUR
100+2.88 EUR
500+2.37 EUR
1000+2.2 EUR
2000+2.14 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
FDPF18N50T FDPF18N50T-D.PDF
FDPF18N50T
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 10.8A; 38.5W; TO220FP
Type of transistor: N-MOSFET
Technology: UniFET™
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10.8A
Power dissipation: 38.5W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 265mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 38 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.29 EUR
23+3.19 EUR
27+2.75 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
FDPF18N50T FDPF18N50T-D.PDF
FDPF18N50T
Hersteller: onsemi
Description: MOSFET N-CH 500V 18A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 265mOhm @ 9A, 10V
Power Dissipation (Max): 38.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2860 pF @ 25 V
auf Bestellung 412 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.18 EUR
50+3.72 EUR
100+3.38 EUR
Mindestbestellmenge: 3
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FDPF18N50T FDPF18N50T-D.PDF
FDPF18N50T
Hersteller: onsemi
MOSFETs 500V N-Channel PowerTrench MOSFET
auf Bestellung 1363 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.23 EUR
10+3.77 EUR
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FDPF8N50NZU ONSM-S-A0003584311-1.pdf?t.download=true&u=5oefqw
FDPF8N50NZU
Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 6
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 735 pF @ 25 V
auf Bestellung 3685 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
205+2.18 EUR
Mindestbestellmenge: 205
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FQA18N50V2 FAIRS19283-1.pdf?t.download=true&u=5oefqw
FQA18N50V2
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 500V 20A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 265mOhm @ 10A, 10V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
auf Bestellung 380 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
86+5.24 EUR
Mindestbestellmenge: 86
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FQA28N50-ON FAIR-S-A0002366321-1.pdf?t.download=true&u=5oefqw
FQA28N50-ON
Hersteller: onsemi
Description: 28.4A, 500V, 0.16OHM, N-CHANNEL
Packaging: Bulk
Part Status: Active
auf Bestellung 4863 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
96+4.68 EUR
Mindestbestellmenge: 96
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FQH18N50V2 FAIRS43003-1.pdf?t.download=true&u=5oefqw
FQH18N50V2
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 500V 20A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 265mOhm @ 10A, 10V
Power Dissipation (Max): 277W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
auf Bestellung 4058 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
87+5.15 EUR
Mindestbestellmenge: 87
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FQP18N50V2 description FAIRS25293-1.pdf?t.download=true&u=5oefqw
FQP18N50V2
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 500V 18A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 265mOhm @ 9A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
auf Bestellung 532 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
60+7.43 EUR
Mindestbestellmenge: 60
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FQPF18N50V2SDTU FAIRS25293-1.pdf?t.download=true&u=5oefqw
FQPF18N50V2SDTU
Hersteller: Fairchild Semiconductor
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tj)
Rds On (Max) @ Id, Vgs: 265mOhm @ 9A, 10V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
auf Bestellung 4845 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
173+2.6 EUR
Mindestbestellmenge: 173
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IXFK48N50 Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-4-N50-Datasheet.PDF?assetguid=887754DE-8CB1-4B0F-B5B9-F6A862E6ADE4
IXFK48N50
Hersteller: IXYS
Description: MOSFET N-CH 500V 48A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 24A, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: TO-264AA (IXFK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
auf Bestellung 1351 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+48.68 EUR
25+32.33 EUR
100+28.75 EUR
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IXFK78N50P3 IXFK(X)78N50P3.pdf
IXFK78N50P3
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 78A; 1130W; TO264
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 78A
Power dissipation: 1.13kW
Case: TO264
On-state resistance: 68mΩ
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
4+18.35 EUR
Mindestbestellmenge: 4
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IXFK78N50P3 DS100313AIXFKFX78N50P3.pdf
IXFK78N50P3
Hersteller: IXYS
Description: MOSFET N-CH 500V 78A TO264AA
Packaging: Tube
Package / Case: TO-264-3, TO-264AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 78A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 500mA, 10V
Power Dissipation (Max): 1130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 4mA
Supplier Device Package: TO-264AA (IXFK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 147 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 9900 pF @ 25 V
auf Bestellung 760 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+41.71 EUR
25+27.34 EUR
100+23.94 EUR
500+23.66 EUR
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IXFK78N50P3 Littelfuse_Discrete_MOSFETs_N_Channel_HiPerFETs_IXF_78N50P3_Datasheet__1_.pdf
IXFK78N50P3
Hersteller: IXYS
MOSFETs 500V 78A 0.068Ohm PolarP3 Power MOSFET
auf Bestellung 3 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+43.6 EUR
10+29.11 EUR
100+28.92 EUR
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IXFK98N50P3 Littelfuse_Discrete_MOSFETs_N_Channel_HiPerFETs_IXF_98N50P3_Datasheet.PDF
IXFK98N50P3
Hersteller: IXYS
MOSFETs 500V 98A 0.05Ohm PolarP3 Power MOSFET
auf Bestellung 32 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+37.66 EUR
10+25.01 EUR
100+23.6 EUR
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IXFN48N50 Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-4-N50-Datasheet.PDF?assetguid=887754DE-8CB1-4B0F-B5B9-F6A862E6ADE4
IXFN48N50
Hersteller: IXYS
Description: MOSFET N-CH 500V 48A SOT-227B
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 4V @ 8mA
Supplier Device Package: SOT-227B
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 25 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+61.2 EUR
10+51.28 EUR
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IXFN48N50 Littelfuse_Discrete_MOSFETs_N_Channel_HiPerFETs_IXF_4_N50_Datasheet.PDF
IXFN48N50
Hersteller: IXYS
MOSFET Modules 500V 48A
auf Bestellung 1350 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+61.92 EUR
10+53.1 EUR
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IXFX78N50P3 Littelfuse_Discrete_MOSFETs_N_Channel_HiPerFETs_IXF_78N50P3_Datasheet__1_.pdf
IXFX78N50P3
Hersteller: IXYS
MOSFETs 500V 78A 0.068Ohm PolarP3 Power MOSFET
auf Bestellung 150 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+29.25 EUR
10+20.29 EUR
120+17.07 EUR
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IXFX98N50P3 DS100317BIXFKFX98N50P3.pdf
IXFX98N50P3
Hersteller: IXYS
Description: MOSFET N-CH 500V 98A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 98A (Tc)
Rds On (Max) @ Id, Vgs: 50mOhm @ 500mA, 10V
Power Dissipation (Max): 1300W (Tc)
Vgs(th) (Max) @ Id: 5V @ 8mA
Supplier Device Package: PLUS247™-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 197 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13100 pF @ 25 V
auf Bestellung 619 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+36.22 EUR
30+23.02 EUR
120+20.13 EUR
510+19.79 EUR
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IXTA08N50D2 Littelfuse_Discrete_MOSFETs_N_Channel_Depletion_Mode_IXT_08N50_Datasheet.PDF
IXTA08N50D2
Hersteller: IXYS
MOSFETs N-CH MOSFETS (D2) 500V 800MA
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.13 EUR
10+3.64 EUR
100+3.31 EUR
500+2.82 EUR
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IXTA08N50D2 Littelfuse-Discrete-MOSFETs-N-Channel-Depletion-Mode-IXT-08N50-Datasheet.PDF?assetguid=A427D242-A59C-4809-AE1D-1E1F10E2A329
IXTA08N50D2
Hersteller: IXYS
Description: MOSFET N-CH 500V 800MA TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 4.6Ohm @ 400mA, 0V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-263AA
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V
auf Bestellung 158 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.04 EUR
50+3.62 EUR
100+3.28 EUR
Mindestbestellmenge: 3
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IXTP08N50D2 IXTA(P,Y)08N50D2.pdf
IXTP08N50D2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 0.8A; 60W; TO220AB; 11ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 0.8A
Power dissipation: 60W
Case: TO220AB
On-state resistance: 4.6Ω
Mounting: THT
Gate charge: 312nC
Kind of package: tube
Kind of channel: depletion
Reverse recovery time: 11ns
auf Bestellung 262 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.76 EUR
23+3.16 EUR
29+2.55 EUR
50+2.03 EUR
100+1.9 EUR
Mindestbestellmenge: 20
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IXTP08N50D2 Littelfuse-Discrete-MOSFETs-N-Channel-Depletion-Mode-IXT-08N50-Datasheet.PDF?assetguid=A427D242-A59C-4809-AE1D-1E1F10E2A329
IXTP08N50D2
Hersteller: IXYS
Description: MOSFET N-CH 500V 800MA TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 4.6Ohm @ 400mA, 0V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-220-3
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V
auf Bestellung 1550 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.53 EUR
50+3.32 EUR
100+3.01 EUR
500+2.47 EUR
1000+2.3 EUR
Mindestbestellmenge: 3
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IXTP08N50D2 Littelfuse_Discrete_MOSFETs_N_Channel_Depletion_Mode_IXT_08N50_Datasheet.PDF
IXTP08N50D2
Hersteller: IXYS
MOSFETs N-CH MOSFETS 500V 800MA
auf Bestellung 520 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.25 EUR
10+3.2 EUR
100+2.73 EUR
500+2.53 EUR
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IXTY08N50D2 Littelfuse_Discrete_MOSFETs_N_Channel_Depletion_Mode_IXT_08N50_Datasheet.PDF
IXTY08N50D2
Hersteller: IXYS
MOSFETs N-CH MOSFETS 500V 800MA
auf Bestellung 21705 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.6 EUR
10+3.2 EUR
70+2.73 EUR
560+2.53 EUR
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IXTY08N50D2 Littelfuse-Discrete-MOSFETs-N-Channel-Depletion-Mode-IXT-08N50-Datasheet.PDF?assetguid=A427D242-A59C-4809-AE1D-1E1F10E2A329
IXTY08N50D2
Hersteller: IXYS
Description: MOSFET N-CH 500V 800MA TO252
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel, Depletion Mode
Current - Continuous Drain (Id) @ 25°C: 800mA (Tc)
Rds On (Max) @ Id, Vgs: 4.6Ohm @ 400mA, 0V
Power Dissipation (Max): 60W (Tc)
Supplier Device Package: TO-252AA
Part Status: Active
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12.7 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 312 pF @ 25 V
auf Bestellung 2130 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.53 EUR
70+3.17 EUR
140+2.88 EUR
560+2.44 EUR
1050+2.29 EUR
2030+2.15 EUR
Mindestbestellmenge: 3
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IXTY08N50D2-TRL Littelfuse_Discrete_MOSFETs_N_Channel_Depletion_Mode_IXT_08N50_Datasheet.PDF
IXTY08N50D2-TRL
Hersteller: IXYS
MOSFET Modules DISCRETE SEMICONDUCTOR MODULES
auf Bestellung 2234 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.6 EUR
10+4.35 EUR
100+3.06 EUR
500+2.57 EUR
2500+2.53 EUR
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