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| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||||
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STW38N65M5 Produktcode: 223134
zu Favoriten hinzufügen
Lieblingsprodukt
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 Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
erwartet: 4 St.
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Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||||||
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18N65F | GOODWORK |
Description: 650V18A410m@10VITO-220AB |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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DIW018N65 | DIOTEC SEMICONDUCTOR |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 60A; 155W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 11A Pulsed drain current: 60A Power dissipation: 155W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.18Ω Mounting: THT Gate charge: 38nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 70 Stücke: Lieferzeit 14-21 Tag (e) |
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DIW018N65 | Diotec Semiconductor |
Description: MOSFET N-CH 650V 18A TO-247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V Power Dissipation (Max): 155W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-247 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 380 V |
auf Bestellung 420 Stücke: Lieferzeit 10-14 Tag (e) |
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IKA08N65F5 | Infineon Technologies |
IGBTs ENGINEERING SAMPLES TRENCHSTOP-5 IGBT |
auf Bestellung 5 Stücke: Lieferzeit 10-14 Tag (e) |
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IKA08N65F5XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 6.8A; 15.6W; TO220FP; F5 Type of transistor: IGBT Technology: TRENCHSTOP™ 5 Power dissipation: 15.6W Case: TO220FP Mounting: THT Gate charge: 22nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 24A Gate-emitter voltage: ±20V Collector current: 6.8A Manufacturer series: F5 Collector-emitter voltage: 650V |
auf Bestellung 80 Stücke: Lieferzeit 14-21 Tag (e) |
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IKA08N65H5XKSA1 | Infineon Technologies |
Description: IGBT 650V 10.8A TO220-3 |
auf Bestellung 20210 Stücke: Lieferzeit 10-14 Tag (e) |
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IKD08N65ET6ARMA1 | Infineon Technologies |
Description: IGBT TRENCH FS 650V 15A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 43 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 5A Supplier Device Package: PG-TO252-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 20ns/59ns Switching Energy: 110µJ (on), 40µJ (off) Test Condition: 400V, 5A, 47Ohm, 15V Gate Charge: 17 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 15 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 25 A Power - Max: 47 W |
auf Bestellung 2982 Stücke: Lieferzeit 10-14 Tag (e) |
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IKP08N65F5XKSA1 | Infineon Technologies |
Description: IGBT |
auf Bestellung 2749 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA8N65X2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO263 Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Power dissipation: 150W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: SMD Gate charge: 11nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 105ns |
auf Bestellung 421 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFP18N65X2 | IXYS |
Description: MOSFET N-CH 650V 18A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 10V Power Dissipation (Max): 290W (Tc) Vgs(th) (Max) @ Id: 5V @ 1.5mA Supplier Device Package: TO-220 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 25 V |
auf Bestellung 298 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFP8N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO220AB Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: THT Gate charge: 11nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 105ns |
auf Bestellung 195 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFY8N65X2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO252 Type of transistor: N-MOSFET Technology: HiPerFET™; X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Power dissipation: 150W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.45Ω Mounting: SMD Gate charge: 11nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 105ns |
auf Bestellung 92 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTA8N65X2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO263 Type of transistor: N-MOSFET Technology: X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Power dissipation: 150W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 12nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 200ns |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTA8N65X2 | IXYS |
Description: MOSFET N-CH 650V 8A TO263 Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Tc) Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V |
auf Bestellung 69 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTH48N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 48A; 660W; TO247-3 Type of transistor: N-MOSFET Technology: X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 48A Power dissipation: 660W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 65mΩ Mounting: THT Gate charge: 76nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 400ns |
auf Bestellung 158 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTH48N65X2 | IXYS |
MOSFETs TO247 650V 48A N-CH X2CLASS |
auf Bestellung 302 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTH48N65X2 | IXYS |
Description: MOSFET N-CH 650V 48A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 68mOhm @ 24A, 10V Power Dissipation (Max): 660W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 4mA Supplier Device Package: TO-247 (IXTH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 25 V |
auf Bestellung 448 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP8N65X2 | IXYS |
MOSFETs TO220 650V 8A N-CH X2CLASS |
auf Bestellung 25 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTP8N65X2M | IXYS |
MOSFETs TO220 650V 8A N-CH X2CLASS |
auf Bestellung 87 Stücke: Lieferzeit 10-14 Tag (e) |
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IXTQ48N65X2M | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 48A; Idm: 70A; 70W; TO3PF Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 48A Pulsed drain current: 70A Power dissipation: 70W Case: TO3PF Gate-source voltage: ±30V On-state resistance: 65mΩ Mounting: THT Gate charge: 76nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTY8N65X2 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO252 Type of transistor: N-MOSFET Technology: X2-Class Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Power dissipation: 150W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.5Ω Mounting: SMD Gate charge: 12nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 200ns |
auf Bestellung 21 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTY8N65X2 | IXYS |
MOSFETs TO252 650V 8A N-CH X2CLASS |
auf Bestellung 27 Stücke: Lieferzeit 10-14 Tag (e) |
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IXYA48N65A5 | IXYS |
Description: IGBT TRENCH FS 650V 130A TO-263 Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A Supplier Device Package: TO-263 (D2Pak) IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 20ns/205ns Switching Energy: 400µJ (on), 1.25mJ (off) Test Condition: 400V, 30A, 5Ohm, 15V Gate Charge: 100 nC Current - Collector (Ic) (Max): 130 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 236 A Power - Max: 326 W |
auf Bestellung 600 Stücke: Lieferzeit 10-14 Tag (e) |
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IXYA48N65A5 | IXYS |
IGBTs 650V, 48A, XPT Gen5 A5 IGBT in TO-263 |
auf Bestellung 300 Stücke: Lieferzeit 10-14 Tag (e) |
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IXYP48N65A5 | IXYS |
Description: IGBT TRENCH FS 650V 130A TO-220 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A Supplier Device Package: TO-220 (IXYP) IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 20ns/205ns Switching Energy: 400µJ (on), 1.25mJ (off) Test Condition: 400V, 30A, 5Ohm, 15V Gate Charge: 100 nC Current - Collector (Ic) (Max): 130 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 236 A Power - Max: 326 W |
auf Bestellung 650 Stücke: Lieferzeit 10-14 Tag (e) |
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IXYP48N65A5 | IXYS |
IGBTs 650V, 48A, XPT Gen5 A5 IGBT in TO-220 |
auf Bestellung 291 Stücke: Lieferzeit 10-14 Tag (e) |
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KSM8----N6--5A0 | Essentra Components |
Description: PUSH PULL KNOB 1.000 IN DIAMETER Packaging: Bulk Color: Black Material: Acetal Shaft Size: M8 Diameter: 1.000" (25.40mm) Style: Cylindrical Type: Knurled, Straight Height: 0.410" (10.41mm) Indicator: No Indicator |
auf Bestellung 1069 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT18N65HF | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 650V 18A 0.35 To220F Packaging: Tube Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A Rds On (Max) @ Id, Vgs: 43mOhm @ 9A, 10V Power Dissipation (Max): 50W Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220F Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V |
auf Bestellung 900 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT8N65MD | Guangdong Inmark Electronics Co., Ltd. |
Description: MOSFET N-CH 650V 8A 1.1 To252 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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MOT8N65MF | Guangdong Inmark Electronics Co., Ltd. | Description: MOSFET N-CH 650V 8A 1.1 To220F |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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SH68N65DM6AG | STMicroelectronics |
MOSFETs Automotive grade N-channel 650V 35 mOhm 64A MDmesh DM6 half-bridge Power MOSFET |
auf Bestellung 172 Stücke: Lieferzeit 10-14 Tag (e) |
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SH68N65DM6AG | STMicroelectronics |
Description: MOSFET 2N-CH 650V 64A 9ACEPACK Packaging: Tape & Reel (TR) Package / Case: 9-PowerSMD Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 379W (Tc) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 100V Rds On (Max) @ Id, Vgs: 41mOhm @ 23A, 10V Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: 9-ACEPACK SMIT Part Status: Active |
auf Bestellung 200 Stücke: Lieferzeit 10-14 Tag (e) |
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SH68N65DM6AG | STMicroelectronics |
Description: MOSFET 2N-CH 650V 64A 9ACEPACK Packaging: Cut Tape (CT) Package / Case: 9-PowerSMD Mounting Type: Surface Mount Configuration: 2 N-Channel (Half Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 379W (Tc) Drain to Source Voltage (Vdss): 650V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 100V Rds On (Max) @ Id, Vgs: 41mOhm @ 23A, 10V Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V Vgs(th) (Max) @ Id: 4.75V @ 250µA Supplier Device Package: 9-ACEPACK SMIT Part Status: Active |
auf Bestellung 250 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHG28N65EF-GE3 | Vishay / Siliconix |
MOSFETs 650V Vds 30V Vgs TO-247AC |
auf Bestellung 425 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHP28N65EF-GE3 | Vishay / Siliconix |
MOSFETs 650V Vds 30V Vgs TO-220AB |
auf Bestellung 919 Stücke: Lieferzeit 10-14 Tag (e) |
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STB18N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 15A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 7.5A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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STB18N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 15A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 7.5A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V |
auf Bestellung 5520 Stücke: Lieferzeit 10-14 Tag (e) |
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STB18N65M5 | STMicroelectronics |
MOSFETs N-Ch 650V 0.198 Ohm 15 A MDmesh M5 |
auf Bestellung 1436 Stücke: Lieferzeit 10-14 Tag (e) |
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STB28N65M2 | STMicroelectronics |
MOSFETs N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in D2PAK package |
auf Bestellung 216 Stücke: Lieferzeit 10-14 Tag (e) |
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STB28N65M2 | STMicroelectronics |
Description: MOSFET N-CH 650V 20A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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STB28N65M2 | STMicroelectronics |
Description: MOSFET N-CH 650V 20A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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STB38N65M5 | STMicroelectronics |
MOSFETs N-Ch 650V 0.076 Ohm 30 A MDmesh M5 |
auf Bestellung 757 Stücke: Lieferzeit 10-14 Tag (e) |
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STB38N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 30A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V Power Dissipation (Max): 190W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V |
auf Bestellung 747 Stücke: Lieferzeit 10-14 Tag (e) |
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STB8N65M5 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4.4A; 70W; D2PAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 4.4A Power dissipation: 70W Case: D2PAK Gate-source voltage: ±25V On-state resistance: 0.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
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STB8N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 7A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 100 V |
auf Bestellung 1017 Stücke: Lieferzeit 10-14 Tag (e) |
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STB8N65M5 | STMicroelectronics |
MOSFETs MDmesh V N-Ch 650V 710V VDSS <0.6ohm 7A |
auf Bestellung 705 Stücke: Lieferzeit 10-14 Tag (e) |
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STD18N65M5 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 9.4A; 110W; DPAK; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 9.4A Power dissipation: 110W Case: DPAK Gate-source voltage: ±25V On-state resistance: 0.22Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
auf Bestellung 445 Stücke: Lieferzeit 14-21 Tag (e) |
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STD18N65M5 | STMicroelectronics |
MOSFETs N-Ch 650V 0.198 Ohm 15 A MDmesh M5 |
auf Bestellung 770 Stücke: Lieferzeit 10-14 Tag (e) |
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STD18N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 15A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 220mOhm @ 7.5A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V |
auf Bestellung 3158 Stücke: Lieferzeit 10-14 Tag (e) |
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STD8N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 7A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V Power Dissipation (Max): 70W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 100 V |
auf Bestellung 504 Stücke: Lieferzeit 10-14 Tag (e) |
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STF18N65M2 | STMicroelectronics |
MOSFETs N-channel 650 V, 0.275 Ohm typ., 12 A MDmesh M2 Power MOSFET in a TO-220FP packa |
auf Bestellung 469 Stücke: Lieferzeit 10-14 Tag (e) |
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STF18N65M2 | STMicroelectronics |
Description: MOSFET N-CH 650V 12A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 330mOhm @ 6A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 100 V |
auf Bestellung 2406 Stücke: Lieferzeit 10-14 Tag (e) |
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STF28N65M2 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 80A; 30W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Pulsed drain current: 80A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.18Ω Mounting: THT Gate charge: 35nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 40 Stücke: Lieferzeit 14-21 Tag (e) |
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STF28N65M2 | STMicroelectronics |
MOSFETs N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in TO-220FP package |
auf Bestellung 1206 Stücke: Lieferzeit 10-14 Tag (e) |
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STF38N65M5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 120A; 35W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 30A Pulsed drain current: 120A Power dissipation: 35W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 95mΩ Mounting: THT Gate charge: 71nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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STF38N65M5 | STMicroelectronics |
MOSFETs N-Ch 650V 0.076 Ohm 30 A MDmesh M5 |
auf Bestellung 1953 Stücke: Lieferzeit 10-14 Tag (e) |
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STF38N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 30A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V Power Dissipation (Max): 35W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V |
auf Bestellung 250 Stücke: Lieferzeit 10-14 Tag (e) |
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STF8N65M5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 4.4A; 25W; TO220FP Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Drain current: 4.4A Power dissipation: 25W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.6Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
auf Bestellung 43 Stücke: Lieferzeit 14-21 Tag (e) |
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STFU18N65M2 | STMicroelectronics |
MOSFETs N-channel 650 V, 0.275 Ohm typ., 12 A MDmesh M2 Power MOSFET in a TO-220FP ultra |
auf Bestellung 978 Stücke: Lieferzeit 10-14 Tag (e) |
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| STW38N65M5 Produktcode: 223134
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Lieblingsprodukt
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Produkt ist nicht verfügbar
erwartet: 4 St.
- 4 St. - erwartet
| 18N65F |
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Hersteller: GOODWORK
Description: 650V18A410m@10VITO-220AB
Description: 650V18A410m@10VITO-220AB
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 50+ | 1.13 EUR |
| DIW018N65 |
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Hersteller: DIOTEC SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 60A; 155W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 60A
Power dissipation: 155W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 11A; Idm: 60A; 155W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Pulsed drain current: 60A
Power dissipation: 155W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 38nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 7.53 EUR |
| 14+ | 6.1 EUR |
| 30+ | 4.62 EUR |
| DIW018N65 |
|
Hersteller: Diotec Semiconductor
Description: MOSFET N-CH 650V 18A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Power Dissipation (Max): 155W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 380 V
Description: MOSFET N-CH 650V 18A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Power Dissipation (Max): 155W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 380 V
auf Bestellung 420 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.63 EUR |
| 30+ | 6.59 EUR |
| 60+ | 6 EUR |
| 120+ | 5.49 EUR |
| IKA08N65F5 |
|
Hersteller: Infineon Technologies
IGBTs ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
IGBTs ENGINEERING SAMPLES TRENCHSTOP-5 IGBT
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.86 EUR |
| 10+ | 3.14 EUR |
| 100+ | 2.12 EUR |
| 500+ | 1.8 EUR |
| 1000+ | 1.59 EUR |
| 2500+ | 1.51 EUR |
| 5000+ | 1.45 EUR |
| IKA08N65F5XKSA1 |
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Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 6.8A; 15.6W; TO220FP; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 15.6W
Case: TO220FP
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 24A
Gate-emitter voltage: ±20V
Collector current: 6.8A
Manufacturer series: F5
Collector-emitter voltage: 650V
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 6.8A; 15.6W; TO220FP; F5
Type of transistor: IGBT
Technology: TRENCHSTOP™ 5
Power dissipation: 15.6W
Case: TO220FP
Mounting: THT
Gate charge: 22nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 24A
Gate-emitter voltage: ±20V
Collector current: 6.8A
Manufacturer series: F5
Collector-emitter voltage: 650V
auf Bestellung 80 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 26+ | 3.33 EUR |
| 39+ | 2.23 EUR |
| 50+ | 2.11 EUR |
| IKA08N65H5XKSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT 650V 10.8A TO220-3
Description: IGBT 650V 10.8A TO220-3
auf Bestellung 20210 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 260+ | 2.06 EUR |
| IKD08N65ET6ARMA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 650V 15A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 43 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 5A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/59ns
Switching Energy: 110µJ (on), 40µJ (off)
Test Condition: 400V, 5A, 47Ohm, 15V
Gate Charge: 17 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 25 A
Power - Max: 47 W
Description: IGBT TRENCH FS 650V 15A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 43 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 5A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/59ns
Switching Energy: 110µJ (on), 40µJ (off)
Test Condition: 400V, 5A, 47Ohm, 15V
Gate Charge: 17 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 25 A
Power - Max: 47 W
auf Bestellung 2982 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.22 EUR |
| 10+ | 4.05 EUR |
| 100+ | 2.81 EUR |
| 500+ | 2.28 EUR |
| 1000+ | 2.12 EUR |
| IKP08N65F5XKSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT
Description: IGBT
auf Bestellung 2749 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 316+ | 1.7 EUR |
| IXFA8N65X2 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 105ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO263
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 105ns
auf Bestellung 421 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 74+ | 1.15 EUR |
| 77+ | 1.11 EUR |
| 81+ | 1.06 EUR |
| IXFP18N65X2 |
|
Hersteller: IXYS
Description: MOSFET N-CH 650V 18A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 25 V
Description: MOSFET N-CH 650V 18A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 9A, 10V
Power Dissipation (Max): 290W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1.5mA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1520 pF @ 25 V
auf Bestellung 298 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.82 EUR |
| 10+ | 8.63 EUR |
| 50+ | 6.83 EUR |
| 100+ | 6.26 EUR |
| IXFP8N65X2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 105ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO220AB
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: THT
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 105ns
auf Bestellung 195 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 23+ | 3.72 EUR |
| 26+ | 3.3 EUR |
| 29+ | 2.98 EUR |
| 50+ | 2.93 EUR |
| IXFY8N65X2 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO252
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 105ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO252
Type of transistor: N-MOSFET
Technology: HiPerFET™; X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.45Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 105ns
auf Bestellung 92 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 69+ | 1.24 EUR |
| IXTA8N65X2 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO263
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO263
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 26+ | 3.33 EUR |
| 30+ | 2.84 EUR |
| IXTA8N65X2 |
|
Hersteller: IXYS
Description: MOSFET N-CH 650V 8A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
Description: MOSFET N-CH 650V 8A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 500mOhm @ 4A, 10V
Power Dissipation (Max): 150W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 25 V
auf Bestellung 69 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.67 EUR |
| 10+ | 6.4 EUR |
| 50+ | 5 EUR |
| IXTH48N65X2 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 48A; 660W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 48A
Power dissipation: 660W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 48A; 660W; TO247-3
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 48A
Power dissipation: 660W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 400ns
auf Bestellung 158 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 15.28 EUR |
| 7+ | 12.9 EUR |
| 10+ | 11.66 EUR |
| 30+ | 9.96 EUR |
| IXTH48N65X2 |
|
Hersteller: IXYS
MOSFETs TO247 650V 48A N-CH X2CLASS
MOSFETs TO247 650V 48A N-CH X2CLASS
auf Bestellung 302 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 23.86 EUR |
| 10+ | 13.23 EUR |
| IXTH48N65X2 |
|
Hersteller: IXYS
Description: MOSFET N-CH 650V 48A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 24A, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 25 V
Description: MOSFET N-CH 650V 48A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 68mOhm @ 24A, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4420 pF @ 25 V
auf Bestellung 448 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 23.73 EUR |
| 30+ | 14.3 EUR |
| 60+ | 13.17 EUR |
| 120+ | 12.23 EUR |
| IXTP8N65X2 |
|
Hersteller: IXYS
MOSFETs TO220 650V 8A N-CH X2CLASS
MOSFETs TO220 650V 8A N-CH X2CLASS
auf Bestellung 25 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.94 EUR |
| 10+ | 4.5 EUR |
| 100+ | 2.49 EUR |
| IXTP8N65X2M |
|
Hersteller: IXYS
MOSFETs TO220 650V 8A N-CH X2CLASS
MOSFETs TO220 650V 8A N-CH X2CLASS
auf Bestellung 87 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.68 EUR |
| 10+ | 4.46 EUR |
| 100+ | 3.89 EUR |
| 500+ | 3.53 EUR |
| IXTQ48N65X2M |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 48A; Idm: 70A; 70W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 48A
Pulsed drain current: 70A
Power dissipation: 70W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 48A; Idm: 70A; 70W; TO3PF
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 48A
Pulsed drain current: 70A
Power dissipation: 70W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 65mΩ
Mounting: THT
Gate charge: 76nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 15 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 15.57 EUR |
| 7+ | 14.04 EUR |
| 10+ | 12.4 EUR |
| IXTY8N65X2 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO252
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; X2-Class; unipolar; 650V; 8A; 150W; TO252
Type of transistor: N-MOSFET
Technology: X2-Class
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.5Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 21+ | 4.05 EUR |
| IXTY8N65X2 |
|
Hersteller: IXYS
MOSFETs TO252 650V 8A N-CH X2CLASS
MOSFETs TO252 650V 8A N-CH X2CLASS
auf Bestellung 27 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.96 EUR |
| 10+ | 4.58 EUR |
| 70+ | 4 EUR |
| 560+ | 3.44 EUR |
| IXYA48N65A5 |
|
Hersteller: IXYS
Description: IGBT TRENCH FS 650V 130A TO-263
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/205ns
Switching Energy: 400µJ (on), 1.25mJ (off)
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 236 A
Power - Max: 326 W
Description: IGBT TRENCH FS 650V 130A TO-263
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A
Supplier Device Package: TO-263 (D2Pak)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/205ns
Switching Energy: 400µJ (on), 1.25mJ (off)
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 236 A
Power - Max: 326 W
auf Bestellung 600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.54 EUR |
| 50+ | 6.69 EUR |
| 100+ | 6.12 EUR |
| 500+ | 5.13 EUR |
| IXYA48N65A5 |
|
Hersteller: IXYS
IGBTs 650V, 48A, XPT Gen5 A5 IGBT in TO-263
IGBTs 650V, 48A, XPT Gen5 A5 IGBT in TO-263
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 12.61 EUR |
| 10+ | 6.72 EUR |
| 100+ | 6.14 EUR |
| 500+ | 5.55 EUR |
| IXYP48N65A5 |
|
Hersteller: IXYS
Description: IGBT TRENCH FS 650V 130A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A
Supplier Device Package: TO-220 (IXYP)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/205ns
Switching Energy: 400µJ (on), 1.25mJ (off)
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 236 A
Power - Max: 326 W
Description: IGBT TRENCH FS 650V 130A TO-220
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.4V @ 15V, 30A
Supplier Device Package: TO-220 (IXYP)
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/205ns
Switching Energy: 400µJ (on), 1.25mJ (off)
Test Condition: 400V, 30A, 5Ohm, 15V
Gate Charge: 100 nC
Current - Collector (Ic) (Max): 130 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 236 A
Power - Max: 326 W
auf Bestellung 650 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.75 EUR |
| 50+ | 6.22 EUR |
| 100+ | 5.69 EUR |
| 500+ | 4.76 EUR |
| IXYP48N65A5 |
|
Hersteller: IXYS
IGBTs 650V, 48A, XPT Gen5 A5 IGBT in TO-220
IGBTs 650V, 48A, XPT Gen5 A5 IGBT in TO-220
auf Bestellung 291 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 11.79 EUR |
| 10+ | 6.26 EUR |
| 100+ | 5.71 EUR |
| 500+ | 5.09 EUR |
| KSM8----N6--5A0 |
|
Hersteller: Essentra Components
Description: PUSH PULL KNOB 1.000 IN DIAMETER
Packaging: Bulk
Color: Black
Material: Acetal
Shaft Size: M8
Diameter: 1.000" (25.40mm)
Style: Cylindrical
Type: Knurled, Straight
Height: 0.410" (10.41mm)
Indicator: No Indicator
Description: PUSH PULL KNOB 1.000 IN DIAMETER
Packaging: Bulk
Color: Black
Material: Acetal
Shaft Size: M8
Diameter: 1.000" (25.40mm)
Style: Cylindrical
Type: Knurled, Straight
Height: 0.410" (10.41mm)
Indicator: No Indicator
auf Bestellung 1069 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.06 EUR |
| 9+ | 2.57 EUR |
| 10+ | 2.4 EUR |
| 25+ | 2.21 EUR |
| 50+ | 2.08 EUR |
| 100+ | 1.96 EUR |
| 250+ | 1.83 EUR |
| 500+ | 1.74 EUR |
| 1000+ | 1.65 EUR |
| MOT18N65HF |
|
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 18A 0.35 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A
Rds On (Max) @ Id, Vgs: 43mOhm @ 9A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
Description: MOSFET N-CH 650V 18A 0.35 To220F
Packaging: Tube
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A
Rds On (Max) @ Id, Vgs: 43mOhm @ 9A, 10V
Power Dissipation (Max): 50W
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220F
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3300 pF @ 25 V
auf Bestellung 900 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.7 EUR |
| 10+ | 4.02 EUR |
| 100+ | 2.42 EUR |
| 500+ | 1.69 EUR |
| MOT8N65MD |
|
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 8A 1.1 To252
Description: MOSFET N-CH 650V 8A 1.1 To252
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.93 EUR |
| 12+ | 1.75 EUR |
| 100+ | 1.05 EUR |
| 500+ | 0.74 EUR |
| 1000+ | 0.63 EUR |
| 2500+ | 0.54 EUR |
| MOT8N65MF |
Hersteller: Guangdong Inmark Electronics Co., Ltd.
Description: MOSFET N-CH 650V 8A 1.1 To220F
Description: MOSFET N-CH 650V 8A 1.1 To220F
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.39 EUR |
| 11+ | 2.02 EUR |
| 100+ | 1.21 EUR |
| 500+ | 0.86 EUR |
| 1000+ | 0.73 EUR |
| SH68N65DM6AG |
|
Hersteller: STMicroelectronics
MOSFETs Automotive grade N-channel 650V 35 mOhm 64A MDmesh DM6 half-bridge Power MOSFET
MOSFETs Automotive grade N-channel 650V 35 mOhm 64A MDmesh DM6 half-bridge Power MOSFET
auf Bestellung 172 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 36.74 EUR |
| 10+ | 23.43 EUR |
| 100+ | 21.86 EUR |
| SH68N65DM6AG |
|
Hersteller: STMicroelectronics
Description: MOSFET 2N-CH 650V 64A 9ACEPACK
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerSMD
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 379W (Tc)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 100V
Rds On (Max) @ Id, Vgs: 41mOhm @ 23A, 10V
Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: 9-ACEPACK SMIT
Part Status: Active
Description: MOSFET 2N-CH 650V 64A 9ACEPACK
Packaging: Tape & Reel (TR)
Package / Case: 9-PowerSMD
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 379W (Tc)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 100V
Rds On (Max) @ Id, Vgs: 41mOhm @ 23A, 10V
Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: 9-ACEPACK SMIT
Part Status: Active
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 200+ | 19.05 EUR |
| SH68N65DM6AG |
|
Hersteller: STMicroelectronics
Description: MOSFET 2N-CH 650V 64A 9ACEPACK
Packaging: Cut Tape (CT)
Package / Case: 9-PowerSMD
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 379W (Tc)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 100V
Rds On (Max) @ Id, Vgs: 41mOhm @ 23A, 10V
Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: 9-ACEPACK SMIT
Part Status: Active
Description: MOSFET 2N-CH 650V 64A 9ACEPACK
Packaging: Cut Tape (CT)
Package / Case: 9-PowerSMD
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Half Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 379W (Tc)
Drain to Source Voltage (Vdss): 650V
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5900pF @ 100V
Rds On (Max) @ Id, Vgs: 41mOhm @ 23A, 10V
Gate Charge (Qg) (Max) @ Vgs: 116nC @ 10V
Vgs(th) (Max) @ Id: 4.75V @ 250µA
Supplier Device Package: 9-ACEPACK SMIT
Part Status: Active
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 36.57 EUR |
| 10+ | 26.12 EUR |
| 50+ | 23.32 EUR |
| SIHG28N65EF-GE3 |
|
Hersteller: Vishay / Siliconix
MOSFETs 650V Vds 30V Vgs TO-247AC
MOSFETs 650V Vds 30V Vgs TO-247AC
auf Bestellung 425 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 15.18 EUR |
| 10+ | 10.17 EUR |
| 100+ | 8.16 EUR |
| 500+ | 6.89 EUR |
| 1000+ | 6.66 EUR |
| SIHP28N65EF-GE3 |
|
Hersteller: Vishay / Siliconix
MOSFETs 650V Vds 30V Vgs TO-220AB
MOSFETs 650V Vds 30V Vgs TO-220AB
auf Bestellung 919 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 15.79 EUR |
| 10+ | 11.58 EUR |
| 100+ | 11.13 EUR |
| 500+ | 10.91 EUR |
| 1000+ | 6.43 EUR |
| STB18N65M5 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 15A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 7.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
Description: MOSFET N-CH 650V 15A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 7.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 2.42 EUR |
| 3000+ | 2.18 EUR |
| STB18N65M5 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 15A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 7.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
Description: MOSFET N-CH 650V 15A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 7.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
auf Bestellung 5520 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7 EUR |
| 10+ | 4.57 EUR |
| 50+ | 3.53 EUR |
| 100+ | 3.2 EUR |
| 500+ | 2.62 EUR |
| STB18N65M5 |
|
Hersteller: STMicroelectronics
MOSFETs N-Ch 650V 0.198 Ohm 15 A MDmesh M5
MOSFETs N-Ch 650V 0.198 Ohm 15 A MDmesh M5
auf Bestellung 1436 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.02 EUR |
| 10+ | 3.53 EUR |
| 100+ | 3.22 EUR |
| 500+ | 2.64 EUR |
| 1000+ | 2.49 EUR |
| STB28N65M2 |
|
Hersteller: STMicroelectronics
MOSFETs N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in D2PAK package
MOSFETs N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in D2PAK package
auf Bestellung 216 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.32 EUR |
| 10+ | 4.27 EUR |
| 100+ | 3.89 EUR |
| 500+ | 3.31 EUR |
| 1000+ | 3.14 EUR |
| STB28N65M2 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V
Description: MOSFET N-CH 650V 20A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.77 EUR |
| 10+ | 5.78 EUR |
| 50+ | 4.5 EUR |
| 100+ | 4.09 EUR |
| 500+ | 3.5 EUR |
| STB28N65M2 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 20A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V
Description: MOSFET N-CH 650V 20A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1440 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 2.95 EUR |
| STB38N65M5 |
|
Hersteller: STMicroelectronics
MOSFETs N-Ch 650V 0.076 Ohm 30 A MDmesh M5
MOSFETs N-Ch 650V 0.076 Ohm 30 A MDmesh M5
auf Bestellung 757 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 13.42 EUR |
| 10+ | 7.19 EUR |
| 100+ | 6.59 EUR |
| 500+ | 6.28 EUR |
| 1000+ | 5.87 EUR |
| STB38N65M5 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 30A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V
Description: MOSFET N-CH 650V 30A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 190W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V
auf Bestellung 747 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.36 EUR |
| 10+ | 9.02 EUR |
| 50+ | 7.15 EUR |
| 100+ | 6.56 EUR |
| 500+ | 6.26 EUR |
| STB8N65M5 |
|
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.4A; 70W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.4A
Power dissipation: 70W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.4A; 70W; D2PAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.4A
Power dissipation: 70W
Case: D2PAK
Gate-source voltage: ±25V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 7.09 EUR |
| STB8N65M5 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 7A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 100 V
Description: MOSFET N-CH 650V 7A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 100 V
auf Bestellung 1017 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.66 EUR |
| 10+ | 4.33 EUR |
| 50+ | 3.34 EUR |
| 100+ | 3.02 EUR |
| 500+ | 2.46 EUR |
| STB8N65M5 |
|
Hersteller: STMicroelectronics
MOSFETs MDmesh V N-Ch 650V 710V VDSS <0.6ohm 7A
MOSFETs MDmesh V N-Ch 650V 710V VDSS <0.6ohm 7A
auf Bestellung 705 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.68 EUR |
| 10+ | 3.37 EUR |
| 100+ | 3.03 EUR |
| 500+ | 2.49 EUR |
| 1000+ | 2.28 EUR |
| STD18N65M5 |
|
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9.4A; 110W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9.4A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.22Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 9.4A; 110W; DPAK; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9.4A
Power dissipation: 110W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.22Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 445 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 33+ | 2.58 EUR |
| 35+ | 2.49 EUR |
| 36+ | 2.38 EUR |
| 38+ | 2.28 EUR |
| 50+ | 2.14 EUR |
| 100+ | 2.07 EUR |
| STD18N65M5 |
|
Hersteller: STMicroelectronics
MOSFETs N-Ch 650V 0.198 Ohm 15 A MDmesh M5
MOSFETs N-Ch 650V 0.198 Ohm 15 A MDmesh M5
auf Bestellung 770 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.72 EUR |
| 10+ | 3.39 EUR |
| 100+ | 3.06 EUR |
| 500+ | 2.51 EUR |
| 1000+ | 2.49 EUR |
| 2500+ | 2.31 EUR |
| STD18N65M5 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 15A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 7.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
Description: MOSFET N-CH 650V 15A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 220mOhm @ 7.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1240 pF @ 100 V
auf Bestellung 3158 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.85 EUR |
| 10+ | 4.47 EUR |
| 50+ | 3.46 EUR |
| 100+ | 3.13 EUR |
| 500+ | 2.55 EUR |
| STD8N65M5 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 100 V
Description: MOSFET N-CH 650V 7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.5A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 690 pF @ 100 V
auf Bestellung 504 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.26 EUR |
| 10+ | 4.07 EUR |
| 50+ | 3.13 EUR |
| 100+ | 2.83 EUR |
| 500+ | 2.3 EUR |
| STF18N65M2 |
|
Hersteller: STMicroelectronics
MOSFETs N-channel 650 V, 0.275 Ohm typ., 12 A MDmesh M2 Power MOSFET in a TO-220FP packa
MOSFETs N-channel 650 V, 0.275 Ohm typ., 12 A MDmesh M2 Power MOSFET in a TO-220FP packa
auf Bestellung 469 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.43 EUR |
| 10+ | 3.39 EUR |
| 100+ | 2.7 EUR |
| 500+ | 2.26 EUR |
| 1000+ | 2.23 EUR |
| 2000+ | 2.07 EUR |
| 5000+ | 2.03 EUR |
| STF18N65M2 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 6A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 100 V
Description: MOSFET N-CH 650V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 330mOhm @ 6A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 100 V
auf Bestellung 2406 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.7 EUR |
| 10+ | 4.37 EUR |
| 50+ | 3.36 EUR |
| 100+ | 3.03 EUR |
| 500+ | 2.46 EUR |
| STF28N65M2 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 80A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 20A; Idm: 80A; 30W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.18Ω
Mounting: THT
Gate charge: 35nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 19+ | 4.68 EUR |
| 29+ | 3.03 EUR |
| STF28N65M2 |
|
Hersteller: STMicroelectronics
MOSFETs N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in TO-220FP package
MOSFETs N-channel 650 V, 0.15 Ohm typ., 20 A MDmesh M2 Power MOSFET in TO-220FP package
auf Bestellung 1206 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.98 EUR |
| 10+ | 4.77 EUR |
| 100+ | 3.92 EUR |
| 500+ | 3.28 EUR |
| 1000+ | 3.01 EUR |
| 2000+ | 2.87 EUR |
| STF38N65M5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 120A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 30A; Idm: 120A; 35W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 35W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 95mΩ
Mounting: THT
Gate charge: 71nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 8.46 EUR |
| 15+ | 5.93 EUR |
| STF38N65M5 |
|
Hersteller: STMicroelectronics
MOSFETs N-Ch 650V 0.076 Ohm 30 A MDmesh M5
MOSFETs N-Ch 650V 0.076 Ohm 30 A MDmesh M5
auf Bestellung 1953 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 12.46 EUR |
| 10+ | 6.64 EUR |
| 100+ | 6.07 EUR |
| 500+ | 5.09 EUR |
| 1000+ | 4.93 EUR |
| 2000+ | 4.9 EUR |
| STF38N65M5 |
|
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 30A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V
Description: MOSFET N-CH 650V 30A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 95mOhm @ 15A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 71 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 100 V
auf Bestellung 250 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.4 EUR |
| 10+ | 8.34 EUR |
| 50+ | 6.6 EUR |
| 100+ | 6.05 EUR |
| STF8N65M5 |
|
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 4.4A; 25W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.4A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 4.4A; 25W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.4A
Power dissipation: 25W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.6Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 43 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 22+ | 4.05 EUR |
| 24+ | 3.57 EUR |
| 27+ | 3.21 EUR |
| STFU18N65M2 |
|
Hersteller: STMicroelectronics
MOSFETs N-channel 650 V, 0.275 Ohm typ., 12 A MDmesh M2 Power MOSFET in a TO-220FP ultra
MOSFETs N-channel 650 V, 0.275 Ohm typ., 12 A MDmesh M2 Power MOSFET in a TO-220FP ultra
auf Bestellung 978 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.06 EUR |
| 10+ | 3.01 EUR |
| 100+ | 2.75 EUR |
| 500+ | 2.23 EUR |
| 1000+ | 2.15 EUR |
| 2000+ | 2 EUR |
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