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Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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HPZR-C11-QX | Nexperia | Zener Diodes ZENER SOD123W/CFP3 |
auf Bestellung 2870 Stücke: Lieferzeit 10-14 Tag (e) |
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HPZR-C11X | Nexperia | Zener Diodes ZENER SOD123W/CFP3 |
auf Bestellung 2723 Stücke: Lieferzeit 10-14 Tag (e) |
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HSMR-C110 | BROADCOM (AVAGO) |
Category: SMD colour LEDs Description: LED; SMD; 1204; blue; 18÷60mcd; 3.2x1.5x1mm; 130°; 3.4÷3.9V; 20mA Type of diode: LED Mounting: SMD Case: 1204 LED colour: blue Luminosity: 18...60mcd Dimensions: 3.2x1.5x1mm Viewing angle: 130° LED current: 20mA Wavelength: 473nm LED lens: transparent Power: 78mW Operating voltage: 3.4...3.9V Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1768 Stücke: Lieferzeit 7-14 Tag (e) |
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HSMR-C110 | Broadcom Limited |
Description: LED BLUE DIFF CHIP SMD R/A Packaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Color: Blue Size / Dimension: 3.20mm L x 1.50mm W Mounting Type: Surface Mount, Right Angle Millicandela Rating: 60mcd Configuration: Standard Voltage - Forward (Vf) (Typ): 3.4V Lens Color: White Current - Test: 20mA Viewing Angle: 130° Height (Max): 1.00mm Wavelength - Peak: 469nm Wavelength - Dominant: 473nm Supplier Device Package: Chip LED Lens Transparency: Diffused Part Status: Active Lens Style: Rectangle with Domed Top Lens Size: 2.00mm x 1.00mm |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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HSMR-C110 | Broadcom Limited |
Description: LED BLUE DIFF CHIP SMD R/A Packaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Color: Blue Size / Dimension: 3.20mm L x 1.50mm W Mounting Type: Surface Mount, Right Angle Millicandela Rating: 60mcd Configuration: Standard Voltage - Forward (Vf) (Typ): 3.4V Lens Color: White Current - Test: 20mA Viewing Angle: 130° Height (Max): 1.00mm Wavelength - Peak: 469nm Wavelength - Dominant: 473nm Supplier Device Package: Chip LED Lens Transparency: Diffused Part Status: Active Lens Style: Rectangle with Domed Top Lens Size: 2.00mm x 1.00mm |
auf Bestellung 5258 Stücke: Lieferzeit 10-14 Tag (e) |
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HTRC11001T/03EE | NXP |
HITAG reader chip HTRC11001T/02EE;11 (57/TUBE); HTRC11001T/03EE;11 (2500/T&R) HTRC11001T/02EE; HTR HTRC11001T/03EE UIHTRC11001t Anzahl je Verpackung: 2 Stücke |
auf Bestellung 2041 Stücke: Lieferzeit 7-14 Tag (e) |
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HTRC11001T/03EE | NXP |
HITAG reader chip HTRC11001T/02EE;11 (57/TUBE); HTRC11001T/03EE;11 (2500/T&R) HTRC11001T/02EE; HTR HTRC11001T/03EE UIHTRC11001t Anzahl je Verpackung: 2 Stücke |
auf Bestellung 47 Stücke: Lieferzeit 7-14 Tag (e) |
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HTRC11001T/03EE,11 | NXP USA Inc. |
Description: IC RFID READER 125KHZ 14SO Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Frequency: 125kHz Type: RFID Reader Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Supplier Device Package: 14-SO Part Status: Active |
auf Bestellung 2557 Stücke: Lieferzeit 10-14 Tag (e) |
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HTRC11001T/03EE,11 | NXP Semiconductors | NFC/RFID Tags & Transponders RFID HITAG READER |
auf Bestellung 10815 Stücke: Lieferzeit 10-14 Tag (e) |
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HTRC11001T/03EE,11 | NXP USA Inc. |
Description: IC RFID READER 125KHZ 14SO Packaging: Tape & Reel (TR) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Frequency: 125kHz Type: RFID Reader Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Supplier Device Package: 14-SO Part Status: Active |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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MMBTRC110SS | DIOTEC SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; 4.7kΩ Mounting: SMD Type of transistor: NPN Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 4.7kΩ Case: SOT23 Frequency: 250MHz Collector-emitter voltage: 50V Collector current: 0.1A |
auf Bestellung 2227 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBTRC110SS | DIOTEC SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; 4.7kΩ Mounting: SMD Type of transistor: NPN Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 4.7kΩ Case: SOT23 Frequency: 250MHz Collector-emitter voltage: 50V Collector current: 0.1A Anzahl je Verpackung: 20 Stücke |
auf Bestellung 2227 Stücke: Lieferzeit 7-14 Tag (e) |
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MMBTRC116SS | DIOTEC SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 1kΩ Mounting: SMD Type of transistor: NPN Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 1kΩ Base-emitter resistor: 10kΩ Case: SOT23 Frequency: 250MHz Collector-emitter voltage: 50V Collector current: 0.1A |
auf Bestellung 1140 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBTRC117SS | DIOTEC SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ Mounting: SMD Type of transistor: NPN Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Case: SOT23 Frequency: 250MHz Collector-emitter voltage: 50V Collector current: 0.1A |
auf Bestellung 1621 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBTRC117SS | DIOTEC SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ Mounting: SMD Type of transistor: NPN Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 2.2kΩ Case: SOT23 Frequency: 250MHz Collector-emitter voltage: 50V Collector current: 0.1A Anzahl je Verpackung: 20 Stücke |
auf Bestellung 1621 Stücke: Lieferzeit 7-14 Tag (e) |
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MMBTRC118SS | DIOTEC SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ Mounting: SMD Type of transistor: NPN Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ Case: SOT23 Frequency: 250MHz Collector-emitter voltage: 50V Collector current: 0.1A |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBTRC118SS | DIOTEC SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ Mounting: SMD Type of transistor: NPN Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 2.2kΩ Base-emitter resistor: 10kΩ Case: SOT23 Frequency: 250MHz Collector-emitter voltage: 50V Collector current: 0.1A Anzahl je Verpackung: 20 Stücke |
auf Bestellung 3000 Stücke: Lieferzeit 7-14 Tag (e) |
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MMBTRC119SS | DIOTEC SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 4.7kΩ Mounting: SMD Type of transistor: NPN Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 4.7kΩ Base-emitter resistor: 10kΩ Case: SOT23 Frequency: 250MHz Collector-emitter voltage: 50V Collector current: 0.1A |
auf Bestellung 1300 Stücke: Lieferzeit 14-21 Tag (e) |
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MMBTRC119SS | DIOTEC SEMICONDUCTOR |
Category: NPN SMD transistors Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 4.7kΩ Mounting: SMD Type of transistor: NPN Power dissipation: 0.2W Polarisation: bipolar Kind of package: reel; tape Kind of transistor: BRT Base resistor: 4.7kΩ Base-emitter resistor: 10kΩ Case: SOT23 Frequency: 250MHz Collector-emitter voltage: 50V Collector current: 0.1A Anzahl je Verpackung: 20 Stücke |
auf Bestellung 1300 Stücke: Lieferzeit 7-14 Tag (e) |
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RGS00TS65DHRC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 88A TO247N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 103 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 36ns/115ns Switching Energy: 1.46mJ (on), 1.29mJ (off) Test Condition: 400V, 50A, 10Ohm, 15V Gate Charge: 58 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 88 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 326 W Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 450 Stücke: Lieferzeit 10-14 Tag (e) |
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RGS00TS65DHRC11 | ROHM Semiconductor | IGBT Transistors IGBT FieldStop Trnch 50A; TO-247N; 650V |
auf Bestellung 446 Stücke: Lieferzeit 10-14 Tag (e) |
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RGS00TS65EHRC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 88A TO247N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 113 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 36ns/115ns Test Condition: 400V, 50A, 10Ohm, 15V Gate Charge: 58 nC Current - Collector (Ic) (Max): 88 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 326 W |
auf Bestellung 450 Stücke: Lieferzeit 10-14 Tag (e) |
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RGS00TS65EHRC11 | ROHM Semiconductor | IGBT Transistors TO247NNP 650V TRNCH 50A |
auf Bestellung 893 Stücke: Lieferzeit 10-14 Tag (e) |
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RGS00TS65HRC11 | ROHM Semiconductor | IGBT Transistors 650V 50A Field Stop Trench IGBT. RGS00TS65HR is a highly reliable IGBT for automotive inverter, heater. |
auf Bestellung 448 Stücke: Lieferzeit 10-14 Tag (e) |
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RGS30TSX2DHRC11 | Rohm Semiconductor |
Description: IGBT TRENCH FS 1200V 30A TO247N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 157 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 30ns/70ns Switching Energy: 740µJ (on), 600µJ (off) Test Condition: 600V, 15A, 10Ohm, 15V Gate Charge: 41 nC Part Status: Active Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 45 A Power - Max: 267 W |
auf Bestellung 3128 Stücke: Lieferzeit 10-14 Tag (e) |
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RGS30TSX2HRC11 | Rohm Semiconductor |
Description: IGBT TRENCH FLD 1200V 30A TO247N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 30ns/70ns Switching Energy: 740µJ (on), 600µJ (off) Test Condition: 600V, 15A, 10Ohm, 15V Gate Charge: 41 nC Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 45 A Power - Max: 267 W |
auf Bestellung 492 Stücke: Lieferzeit 10-14 Tag (e) |
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RGS50TSX2HRC11 | Rohm Semiconductor |
Description: IGBT TRENCH FLD 1200V 50A TO247N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 37ns/140ns Switching Energy: 1.4mJ (on), 1.65mJ (off) Test Condition: 600V, 25A, 10Ohm, 15V Gate Charge: 67 nC Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 75 A Power - Max: 395 W |
auf Bestellung 446 Stücke: Lieferzeit 10-14 Tag (e) |
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RGS60TS65DHRC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 30A; 111W; TO247-3 Mounting: THT Kind of package: tube Case: TO247-3 Pulsed collector current: 90A Turn-on time: 46ns Turn-off time: 290ns Type of transistor: IGBT Power dissipation: 111W Gate-emitter voltage: ±30V Collector-emitter voltage: 650V Collector current: 30A Features of semiconductor devices: integrated anti-parallel diode Gate charge: 36nC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 430 Stücke: Lieferzeit 7-14 Tag (e) |
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RGS60TS65DHRC11 | ROHM Semiconductor | IGBT Transistors 650V 30A Field Stop Trench IGBT. ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications. |
auf Bestellung 449 Stücke: Lieferzeit 10-14 Tag (e) |
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RGS60TS65DHRC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 56A TO247N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 103 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 28ns/104ns Switching Energy: 660µJ (on), 810µJ (off) Test Condition: 400V, 30A, 10Ohm, 15V Gate Charge: 36 nC Current - Collector (Ic) (Max): 56 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 90 A Power - Max: 223 W |
auf Bestellung 450 Stücke: Lieferzeit 10-14 Tag (e) |
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RGS60TS65HRC11 | ROHM Semiconductor | IGBT Transistors 650V 30A Field Stop Trench IGBT. RGS60TS65HR is a highly reliable IGBT for automotive inverter, heater. |
auf Bestellung 450 Stücke: Lieferzeit 10-14 Tag (e) |
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RGS80TS65DHRC11 | ROHM Semiconductor | IGBT Transistors TO247NNP 650V TRNCH 40A |
auf Bestellung 1467 Stücke: Lieferzeit 10-14 Tag (e) |
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RGS80TSX2DHRC11 | ROHM Semiconductor | IGBT Transistors 1200V 40A Field Stop Trench IGBT. RGS80TSX2DHR is a highly reliable IGBT for the general inverter for automotive and industrial. |
auf Bestellung 381 Stücke: Lieferzeit 10-14 Tag (e) |
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RGS80TSX2DHRC11 | Rohm Semiconductor |
Description: IGBT TRENCH FS 1200V 80A TO247N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 198 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 49ns/199ns Switching Energy: 3mJ (on), 3.1mJ (off) Test Condition: 600V, 40A, 10Ohm, 15V Gate Charge: 104 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 120 A Power - Max: 555 W |
auf Bestellung 359 Stücke: Lieferzeit 10-14 Tag (e) |
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RGS80TSX2HRC11 | ROHM Semiconductor | IGBT Transistors 1200V 40A Field Stop Trench IGBT. RGS80TSX2HR is a highly reliable IGBT for automotive inverter, heater. |
auf Bestellung 443 Stücke: Lieferzeit 10-14 Tag (e) |
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RGSX5TS65DHRC11 | Rohm Semiconductor |
Description: IGBT TRENCH FLD 650V 114A TO247N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 114 ns Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 43ns/113ns Switching Energy: 3.32mJ (on), 1.9mJ (off) Test Condition: 400V, 75A, 10Ohm, 15V Gate Charge: 79 nC Current - Collector (Ic) (Max): 114 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 225 A Power - Max: 404 W |
auf Bestellung 450 Stücke: Lieferzeit 10-14 Tag (e) |
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RGSX5TS65EHRC11 | Rohm Semiconductor |
Description: IGBT TRENCH FLD 650V 114A TO247N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 116 ns Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 43ns/113ns Switching Energy: 3.44mJ (on), 1.9mJ (off) Test Condition: 400V, 75A, 10Ohm, 15V Gate Charge: 79 nC Current - Collector (Ic) (Max): 114 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 225 A Power - Max: 404 W |
auf Bestellung 390 Stücke: Lieferzeit 10-14 Tag (e) |
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RGSX5TS65EHRC11 | ROHM Semiconductor | IGBT Transistors 8?s Short-Circuit Tolerance, 650V 75A, FRD Built-in, Automotive Field Stop Trench IGBT |
auf Bestellung 450 Stücke: Lieferzeit 10-14 Tag (e) |
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RGW00TS65CHRC11 | ROHM Semiconductor | IGBT Transistors High-Speed Fast Switching Type, 650V 50A, Automotive Hybrid IGBT with Built-In SiC-SBD |
auf Bestellung 463 Stücke: Lieferzeit 10-14 Tag (e) |
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RGW00TS65DHRC11 | ROHM Semiconductor | IGBT Transistors High-Speed Fast Switching Type, 650V 50A, FRD Built-in, TO-247N, Field Stop Trench IGBT for Automotive. |
auf Bestellung 450 Stücke: Lieferzeit 10-14 Tag (e) |
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RGW00TS65DHRC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 96A TO247N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 90 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 48ns/186ns Test Condition: 400V, 25A, 10Ohm, 15V Gate Charge: 141 nC Part Status: Active Current - Collector (Ic) (Max): 96 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 254 W |
auf Bestellung 425 Stücke: Lieferzeit 10-14 Tag (e) |
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RGW00TS65EHRC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 96A TO247N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 90 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 50ns/183ns Test Condition: 400V, 25A, 10Ohm, 15V Gate Charge: 141 nC Current - Collector (Ic) (Max): 96 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 254 W |
auf Bestellung 448 Stücke: Lieferzeit 10-14 Tag (e) |
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RGW00TS65HRC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 96A TO247N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 48ns/186ns Test Condition: 400V, 25A, 10Ohm, 15V Gate Charge: 141 nC Part Status: Active Current - Collector (Ic) (Max): 96 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 200 A Power - Max: 254 W |
auf Bestellung 450 Stücke: Lieferzeit 10-14 Tag (e) |
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RGW60TS65CHRC11 | ROHM Semiconductor | IGBT Transistors High-Speed Fast Switching Type, 650V 30A, Automotive Hybrid IGBT with Built-In SiC-SBD |
auf Bestellung 473 Stücke: Lieferzeit 10-14 Tag (e) |
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RGW60TS65DHRC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 64A TO247N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 87 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 36ns/107ns Test Condition: 400V, 15A, 10Ohm, 15V Gate Charge: 84 nC Current - Collector (Ic) (Max): 64 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 178 W |
auf Bestellung 425 Stücke: Lieferzeit 10-14 Tag (e) |
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RGW60TS65EHRC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 64A TO247N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 146 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 37ns/101ns Test Condition: 400V, 15A, 10Ohm, 15V Gate Charge: 84 nC Current - Collector (Ic) (Max): 64 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 178 W |
auf Bestellung 420 Stücke: Lieferzeit 10-14 Tag (e) |
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RGW60TS65EHRC11 | ROHM Semiconductor | IGBT Transistors High-Speed Fast Switching Type, 650V 30A, FRD Built-in, TO-247N, Field Stop Trench IGBT for Automotive. |
auf Bestellung 450 Stücke: Lieferzeit 10-14 Tag (e) |
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RGW60TS65HRC11 | ROHM Semiconductor | IGBT Transistors High-Speed Fast Switching Type, 650V 30A, TO-247N, Field Stop Trench IGBT for Automotive. |
auf Bestellung 450 Stücke: Lieferzeit 10-14 Tag (e) |
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RGW60TS65HRC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 64A TO247N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 36ns/107ns Test Condition: 400V, 15A, 10Ohm, 15V Gate Charge: 84 nC Part Status: Active Current - Collector (Ic) (Max): 64 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 178 W |
auf Bestellung 450 Stücke: Lieferzeit 10-14 Tag (e) |
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RGW80TS65CHRC11 | Rohm Semiconductor |
Description: IGBT 650V 81A TO247N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 33 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A Supplier Device Package: TO-247N Td (on/off) @ 25°C: 43ns/145ns Switching Energy: 120µJ (on), 340µJ (off) Test Condition: 400V, 20A, 10Ohm, 15V Gate Charge: 110 nC Part Status: Active Current - Collector (Ic) (Max): 81 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 160 A Power - Max: 214 W |
auf Bestellung 357 Stücke: Lieferzeit 10-14 Tag (e) |
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RGW80TS65DHRC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 80A TO247N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 92 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 42ns/148ns Test Condition: 400V, 20A, 10Ohm, 15V Gate Charge: 110 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 160 A Power - Max: 214 W |
auf Bestellung 450 Stücke: Lieferzeit 10-14 Tag (e) |
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RGW80TS65EHRC11 | ROHM Semiconductor | IGBT Transistors High-Speed Fast Switching Type, 650V 40A, FRD Built-in, TO-247N, Field Stop Trench IGBT for Automotive. |
auf Bestellung 450 Stücke: Lieferzeit 10-14 Tag (e) |
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RGW80TS65EHRC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 80A TO247N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 86 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 43ns/148ns Test Condition: 400V, 20A, 10Ohm, 15V Gate Charge: 110 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 160 A Power - Max: 214 W |
auf Bestellung 450 Stücke: Lieferzeit 10-14 Tag (e) |
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RGW80TS65HRC11 | Rohm Semiconductor |
Description: IGBT TRNCH FIELD 650V 80A TO247N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 42ns/148ns Test Condition: 400V, 20A, 10Ohm, 15V Gate Charge: 110 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 160 A Power - Max: 214 W |
auf Bestellung 440 Stücke: Lieferzeit 10-14 Tag (e) |
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RGW80TS65HRC11 | ROHM Semiconductor | IGBT Transistors High-Speed Fast Switching Type, 650V 40A, TO-247N, Field Stop Trench IGBT for Automotive. |
auf Bestellung 450 Stücke: Lieferzeit 10-14 Tag (e) |
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RGWX5TS65DHRC11 | Rohm Semiconductor |
Description: IGBT TRENCH FLD 650V 132A TO247N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 92 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 62ns/237ns Test Condition: 400V, 37.5A, 10Ohm, 15V Gate Charge: 213 nC Current - Collector (Ic) (Max): 132 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 348 W |
auf Bestellung 332 Stücke: Lieferzeit 10-14 Tag (e) |
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RGWX5TS65HRC11 | Rohm Semiconductor |
Description: IGBT TRENCH FLD 650V 132A TO247N Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A Supplier Device Package: TO-247N IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 62ns/237ns Test Condition: 400V, 37.5A, 10Ohm, 15V Gate Charge: 213 nC Part Status: Active Current - Collector (Ic) (Max): 132 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 300 A Power - Max: 348 W |
auf Bestellung 450 Stücke: Lieferzeit 10-14 Tag (e) |
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SCS210KE2HRC11 | Rohm Semiconductor |
Description: DIODE ARR SIC SCHOT 1200V TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 5A (DC) Supplier Device Package: TO-247 Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V Current Coupled to Voltage - Forward (Vf) (Max) @ If: 5 Voltage Coupled to Current - Reverse Leakage @ Vr: 1200 |
auf Bestellung 450 Stücke: Lieferzeit 10-14 Tag (e) |
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SCS210KE2HRC11 | ROHM Semiconductor | Schottky Diodes & Rectifiers AECQ |
auf Bestellung 889 Stücke: Lieferzeit 10-14 Tag (e) |
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SCS220AE2HRC11 | ROHM Semiconductor | Schottky Diodes & Rectifiers AECQ |
auf Bestellung 2168 Stücke: Lieferzeit 10-14 Tag (e) |
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HPZR-C11-QX |
Hersteller: Nexperia
Zener Diodes ZENER SOD123W/CFP3
Zener Diodes ZENER SOD123W/CFP3
auf Bestellung 2870 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 0.67 EUR |
10+ | 0.52 EUR |
100+ | 0.31 EUR |
500+ | 0.29 EUR |
1000+ | 0.2 EUR |
3000+ | 0.17 EUR |
24000+ | 0.15 EUR |
HPZR-C11X |
Hersteller: Nexperia
Zener Diodes ZENER SOD123W/CFP3
Zener Diodes ZENER SOD123W/CFP3
auf Bestellung 2723 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 0.64 EUR |
10+ | 0.49 EUR |
100+ | 0.29 EUR |
500+ | 0.27 EUR |
1000+ | 0.19 EUR |
3000+ | 0.16 EUR |
24000+ | 0.14 EUR |
HSMR-C110 |
Hersteller: BROADCOM (AVAGO)
Category: SMD colour LEDs
Description: LED; SMD; 1204; blue; 18÷60mcd; 3.2x1.5x1mm; 130°; 3.4÷3.9V; 20mA
Type of diode: LED
Mounting: SMD
Case: 1204
LED colour: blue
Luminosity: 18...60mcd
Dimensions: 3.2x1.5x1mm
Viewing angle: 130°
LED current: 20mA
Wavelength: 473nm
LED lens: transparent
Power: 78mW
Operating voltage: 3.4...3.9V
Anzahl je Verpackung: 1 Stücke
Category: SMD colour LEDs
Description: LED; SMD; 1204; blue; 18÷60mcd; 3.2x1.5x1mm; 130°; 3.4÷3.9V; 20mA
Type of diode: LED
Mounting: SMD
Case: 1204
LED colour: blue
Luminosity: 18...60mcd
Dimensions: 3.2x1.5x1mm
Viewing angle: 130°
LED current: 20mA
Wavelength: 473nm
LED lens: transparent
Power: 78mW
Operating voltage: 3.4...3.9V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1768 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
90+ | 0.8 EUR |
176+ | 0.41 EUR |
233+ | 0.31 EUR |
298+ | 0.24 EUR |
315+ | 0.23 EUR |
HSMR-C110 |
Hersteller: Broadcom Limited
Description: LED BLUE DIFF CHIP SMD R/A
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Color: Blue
Size / Dimension: 3.20mm L x 1.50mm W
Mounting Type: Surface Mount, Right Angle
Millicandela Rating: 60mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 3.4V
Lens Color: White
Current - Test: 20mA
Viewing Angle: 130°
Height (Max): 1.00mm
Wavelength - Peak: 469nm
Wavelength - Dominant: 473nm
Supplier Device Package: Chip LED
Lens Transparency: Diffused
Part Status: Active
Lens Style: Rectangle with Domed Top
Lens Size: 2.00mm x 1.00mm
Description: LED BLUE DIFF CHIP SMD R/A
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Color: Blue
Size / Dimension: 3.20mm L x 1.50mm W
Mounting Type: Surface Mount, Right Angle
Millicandela Rating: 60mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 3.4V
Lens Color: White
Current - Test: 20mA
Viewing Angle: 130°
Height (Max): 1.00mm
Wavelength - Peak: 469nm
Wavelength - Dominant: 473nm
Supplier Device Package: Chip LED
Lens Transparency: Diffused
Part Status: Active
Lens Style: Rectangle with Domed Top
Lens Size: 2.00mm x 1.00mm
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.55 EUR |
HSMR-C110 |
Hersteller: Broadcom Limited
Description: LED BLUE DIFF CHIP SMD R/A
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Color: Blue
Size / Dimension: 3.20mm L x 1.50mm W
Mounting Type: Surface Mount, Right Angle
Millicandela Rating: 60mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 3.4V
Lens Color: White
Current - Test: 20mA
Viewing Angle: 130°
Height (Max): 1.00mm
Wavelength - Peak: 469nm
Wavelength - Dominant: 473nm
Supplier Device Package: Chip LED
Lens Transparency: Diffused
Part Status: Active
Lens Style: Rectangle with Domed Top
Lens Size: 2.00mm x 1.00mm
Description: LED BLUE DIFF CHIP SMD R/A
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Color: Blue
Size / Dimension: 3.20mm L x 1.50mm W
Mounting Type: Surface Mount, Right Angle
Millicandela Rating: 60mcd
Configuration: Standard
Voltage - Forward (Vf) (Typ): 3.4V
Lens Color: White
Current - Test: 20mA
Viewing Angle: 130°
Height (Max): 1.00mm
Wavelength - Peak: 469nm
Wavelength - Dominant: 473nm
Supplier Device Package: Chip LED
Lens Transparency: Diffused
Part Status: Active
Lens Style: Rectangle with Domed Top
Lens Size: 2.00mm x 1.00mm
auf Bestellung 5258 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11+ | 1.72 EUR |
16+ | 1.13 EUR |
100+ | 0.74 EUR |
1000+ | 0.58 EUR |
HTRC11001T/03EE |
Hersteller: NXP
HITAG reader chip HTRC11001T/02EE;11 (57/TUBE); HTRC11001T/03EE;11 (2500/T&R) HTRC11001T/02EE; HTR HTRC11001T/03EE UIHTRC11001t
Anzahl je Verpackung: 2 Stücke
HITAG reader chip HTRC11001T/02EE;11 (57/TUBE); HTRC11001T/03EE;11 (2500/T&R) HTRC11001T/02EE; HTR HTRC11001T/03EE UIHTRC11001t
Anzahl je Verpackung: 2 Stücke
auf Bestellung 2041 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 12.19 EUR |
HTRC11001T/03EE |
Hersteller: NXP
HITAG reader chip HTRC11001T/02EE;11 (57/TUBE); HTRC11001T/03EE;11 (2500/T&R) HTRC11001T/02EE; HTR HTRC11001T/03EE UIHTRC11001t
Anzahl je Verpackung: 2 Stücke
HITAG reader chip HTRC11001T/02EE;11 (57/TUBE); HTRC11001T/03EE;11 (2500/T&R) HTRC11001T/02EE; HTR HTRC11001T/03EE UIHTRC11001t
Anzahl je Verpackung: 2 Stücke
auf Bestellung 47 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 12.19 EUR |
HTRC11001T/03EE,11 |
Hersteller: NXP USA Inc.
Description: IC RFID READER 125KHZ 14SO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 125kHz
Type: RFID Reader
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 14-SO
Part Status: Active
Description: IC RFID READER 125KHZ 14SO
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 125kHz
Type: RFID Reader
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 14-SO
Part Status: Active
auf Bestellung 2557 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 8.59 EUR |
10+ | 7.67 EUR |
25+ | 6.9 EUR |
100+ | 6.29 EUR |
250+ | 5.67 EUR |
500+ | 5.09 EUR |
1000+ | 4.29 EUR |
HTRC11001T/03EE,11 |
Hersteller: NXP Semiconductors
NFC/RFID Tags & Transponders RFID HITAG READER
NFC/RFID Tags & Transponders RFID HITAG READER
auf Bestellung 10815 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 8.06 EUR |
10+ | 6.71 EUR |
100+ | 5.79 EUR |
250+ | 5.49 EUR |
500+ | 5.05 EUR |
1000+ | 4.28 EUR |
2500+ | 4.05 EUR |
HTRC11001T/03EE,11 |
Hersteller: NXP USA Inc.
Description: IC RFID READER 125KHZ 14SO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 125kHz
Type: RFID Reader
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 14-SO
Part Status: Active
Description: IC RFID READER 125KHZ 14SO
Packaging: Tape & Reel (TR)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 125kHz
Type: RFID Reader
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Supplier Device Package: 14-SO
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 4.08 EUR |
MMBTRC110SS |
Hersteller: DIOTEC SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; 4.7kΩ
Mounting: SMD
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 4.7kΩ
Case: SOT23
Frequency: 250MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; 4.7kΩ
Mounting: SMD
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 4.7kΩ
Case: SOT23
Frequency: 250MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
auf Bestellung 2227 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1380+ | 0.052 EUR |
MMBTRC110SS |
Hersteller: DIOTEC SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; 4.7kΩ
Mounting: SMD
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 4.7kΩ
Case: SOT23
Frequency: 250MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Anzahl je Verpackung: 20 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; 4.7kΩ
Mounting: SMD
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 4.7kΩ
Case: SOT23
Frequency: 250MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Anzahl je Verpackung: 20 Stücke
auf Bestellung 2227 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1380+ | 0.052 EUR |
2240+ | 0.031 EUR |
MMBTRC116SS |
Hersteller: DIOTEC SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 1kΩ
Mounting: SMD
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Case: SOT23
Frequency: 250MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 1kΩ
Mounting: SMD
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 1kΩ
Base-emitter resistor: 10kΩ
Case: SOT23
Frequency: 250MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
auf Bestellung 1140 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1140+ | 0.063 EUR |
MMBTRC117SS |
Hersteller: DIOTEC SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ
Mounting: SMD
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Case: SOT23
Frequency: 250MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ
Mounting: SMD
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Case: SOT23
Frequency: 250MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
auf Bestellung 1621 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1380+ | 0.052 EUR |
MMBTRC117SS |
Hersteller: DIOTEC SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ
Mounting: SMD
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Case: SOT23
Frequency: 250MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Anzahl je Verpackung: 20 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ
Mounting: SMD
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 2.2kΩ
Case: SOT23
Frequency: 250MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Anzahl je Verpackung: 20 Stücke
auf Bestellung 1621 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1380+ | 0.052 EUR |
1640+ | 0.043 EUR |
2240+ | 0.031 EUR |
MMBTRC118SS |
Hersteller: DIOTEC SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ
Mounting: SMD
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Case: SOT23
Frequency: 250MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ
Mounting: SMD
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Case: SOT23
Frequency: 250MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1380+ | 0.052 EUR |
2660+ | 0.027 EUR |
3000+ | 0.024 EUR |
MMBTRC118SS |
Hersteller: DIOTEC SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ
Mounting: SMD
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Case: SOT23
Frequency: 250MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Anzahl je Verpackung: 20 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 2.2kΩ
Mounting: SMD
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 2.2kΩ
Base-emitter resistor: 10kΩ
Case: SOT23
Frequency: 250MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Anzahl je Verpackung: 20 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1380+ | 0.052 EUR |
2660+ | 0.027 EUR |
3000+ | 0.024 EUR |
MMBTRC119SS |
Hersteller: DIOTEC SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 4.7kΩ
Mounting: SMD
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 10kΩ
Case: SOT23
Frequency: 250MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 4.7kΩ
Mounting: SMD
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 10kΩ
Case: SOT23
Frequency: 250MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
auf Bestellung 1300 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1300+ | 0.054 EUR |
MMBTRC119SS |
Hersteller: DIOTEC SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 4.7kΩ
Mounting: SMD
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 10kΩ
Case: SOT23
Frequency: 250MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Anzahl je Verpackung: 20 Stücke
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; BRT; 50V; 0.1A; 200mW; SOT23; R1: 4.7kΩ
Mounting: SMD
Type of transistor: NPN
Power dissipation: 0.2W
Polarisation: bipolar
Kind of package: reel; tape
Kind of transistor: BRT
Base resistor: 4.7kΩ
Base-emitter resistor: 10kΩ
Case: SOT23
Frequency: 250MHz
Collector-emitter voltage: 50V
Collector current: 0.1A
Anzahl je Verpackung: 20 Stücke
auf Bestellung 1300 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1300+ | 0.054 EUR |
2240+ | 0.031 EUR |
RGS00TS65DHRC11 |
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 88A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 103 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 36ns/115ns
Switching Energy: 1.46mJ (on), 1.29mJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 58 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 88 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 326 W
Grade: Automotive
Qualification: AEC-Q101
Description: IGBT TRNCH FIELD 650V 88A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 103 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 36ns/115ns
Switching Energy: 1.46mJ (on), 1.29mJ (off)
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 58 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 88 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 326 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 6.07 EUR |
30+ | 4.81 EUR |
120+ | 4.12 EUR |
RGS00TS65DHRC11 |
Hersteller: ROHM Semiconductor
IGBT Transistors IGBT FieldStop Trnch 50A; TO-247N; 650V
IGBT Transistors IGBT FieldStop Trnch 50A; TO-247N; 650V
auf Bestellung 446 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 6.02 EUR |
25+ | 4.79 EUR |
100+ | 4.17 EUR |
RGS00TS65EHRC11 |
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 88A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 113 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 36ns/115ns
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 58 nC
Current - Collector (Ic) (Max): 88 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 326 W
Description: IGBT TRNCH FIELD 650V 88A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 113 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 36ns/115ns
Test Condition: 400V, 50A, 10Ohm, 15V
Gate Charge: 58 nC
Current - Collector (Ic) (Max): 88 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 326 W
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 10.74 EUR |
30+ | 8.58 EUR |
120+ | 7.95 EUR |
RGS00TS65EHRC11 |
Hersteller: ROHM Semiconductor
IGBT Transistors TO247NNP 650V TRNCH 50A
IGBT Transistors TO247NNP 650V TRNCH 50A
auf Bestellung 893 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 10.67 EUR |
25+ | 8.54 EUR |
100+ | 8.22 EUR |
RGS00TS65HRC11 |
Hersteller: ROHM Semiconductor
IGBT Transistors 650V 50A Field Stop Trench IGBT. RGS00TS65HR is a highly reliable IGBT for automotive inverter, heater.
IGBT Transistors 650V 50A Field Stop Trench IGBT. RGS00TS65HR is a highly reliable IGBT for automotive inverter, heater.
auf Bestellung 448 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 6.34 EUR |
RGS30TSX2DHRC11 |
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 1200V 30A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 157 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/70ns
Switching Energy: 740µJ (on), 600µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 41 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 267 W
Description: IGBT TRENCH FS 1200V 30A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 157 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/70ns
Switching Energy: 740µJ (on), 600µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 41 nC
Part Status: Active
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 267 W
auf Bestellung 3128 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 13.22 EUR |
30+ | 10.55 EUR |
120+ | 9.44 EUR |
510+ | 8.33 EUR |
1020+ | 7.5 EUR |
2010+ | 7.02 EUR |
RGS30TSX2HRC11 |
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FLD 1200V 30A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/70ns
Switching Energy: 740µJ (on), 600µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 41 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 267 W
Description: IGBT TRENCH FLD 1200V 30A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 15A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 30ns/70ns
Switching Energy: 740µJ (on), 600µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 41 nC
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 267 W
auf Bestellung 492 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 10.89 EUR |
30+ | 8.69 EUR |
120+ | 7.78 EUR |
RGS50TSX2HRC11 |
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FLD 1200V 50A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/140ns
Switching Energy: 1.4mJ (on), 1.65mJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 67 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 395 W
Description: IGBT TRENCH FLD 1200V 50A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 25A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/140ns
Switching Energy: 1.4mJ (on), 1.65mJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 67 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 395 W
auf Bestellung 446 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 14.01 EUR |
30+ | 11.18 EUR |
120+ | 10 EUR |
RGS60TS65DHRC11 |
Hersteller: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 111W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 90A
Turn-on time: 46ns
Turn-off time: 290ns
Type of transistor: IGBT
Power dissipation: 111W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 30A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 36nC
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 30A; 111W; TO247-3
Mounting: THT
Kind of package: tube
Case: TO247-3
Pulsed collector current: 90A
Turn-on time: 46ns
Turn-off time: 290ns
Type of transistor: IGBT
Power dissipation: 111W
Gate-emitter voltage: ±30V
Collector-emitter voltage: 650V
Collector current: 30A
Features of semiconductor devices: integrated anti-parallel diode
Gate charge: 36nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 430 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 7.55 EUR |
14+ | 5.15 EUR |
450+ | 4.95 EUR |
RGS60TS65DHRC11 |
Hersteller: ROHM Semiconductor
IGBT Transistors 650V 30A Field Stop Trench IGBT. ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
IGBT Transistors 650V 30A Field Stop Trench IGBT. ROHM's IGBT products will contribute to energy saving high efficiency and a wide range of high voltage and high-current applications.
auf Bestellung 449 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 7.97 EUR |
25+ | 6.37 EUR |
100+ | 6.12 EUR |
RGS60TS65DHRC11 |
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 56A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 103 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 28ns/104ns
Switching Energy: 660µJ (on), 810µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 36 nC
Current - Collector (Ic) (Max): 56 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 223 W
Description: IGBT TRNCH FIELD 650V 56A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 103 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 28ns/104ns
Switching Energy: 660µJ (on), 810µJ (off)
Test Condition: 400V, 30A, 10Ohm, 15V
Gate Charge: 36 nC
Current - Collector (Ic) (Max): 56 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 223 W
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 8.03 EUR |
30+ | 6.4 EUR |
120+ | 5.93 EUR |
RGS60TS65HRC11 |
Hersteller: ROHM Semiconductor
IGBT Transistors 650V 30A Field Stop Trench IGBT. RGS60TS65HR is a highly reliable IGBT for automotive inverter, heater.
IGBT Transistors 650V 30A Field Stop Trench IGBT. RGS60TS65HR is a highly reliable IGBT for automotive inverter, heater.
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 10.33 EUR |
10+ | 8.34 EUR |
25+ | 7.04 EUR |
100+ | 6.76 EUR |
250+ | 5.32 EUR |
450+ | 5.19 EUR |
900+ | 5.02 EUR |
RGS80TS65DHRC11 |
Hersteller: ROHM Semiconductor
IGBT Transistors TO247NNP 650V TRNCH 40A
IGBT Transistors TO247NNP 650V TRNCH 40A
auf Bestellung 1467 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 12.65 EUR |
10+ | 10.86 EUR |
25+ | 9.84 EUR |
100+ | 9.03 EUR |
250+ | 8.52 EUR |
450+ | 7.97 EUR |
900+ | 7.16 EUR |
RGS80TSX2DHRC11 |
Hersteller: ROHM Semiconductor
IGBT Transistors 1200V 40A Field Stop Trench IGBT. RGS80TSX2DHR is a highly reliable IGBT for the general inverter for automotive and industrial.
IGBT Transistors 1200V 40A Field Stop Trench IGBT. RGS80TSX2DHR is a highly reliable IGBT for the general inverter for automotive and industrial.
auf Bestellung 381 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 19.87 EUR |
10+ | 17.6 EUR |
25+ | 14.38 EUR |
100+ | 13.96 EUR |
250+ | 13.92 EUR |
450+ | 13.69 EUR |
900+ | 12.48 EUR |
RGS80TSX2DHRC11 |
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FS 1200V 80A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 198 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 49ns/199ns
Switching Energy: 3mJ (on), 3.1mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 104 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 555 W
Description: IGBT TRENCH FS 1200V 80A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 198 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 49ns/199ns
Switching Energy: 3mJ (on), 3.1mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 104 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 555 W
auf Bestellung 359 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 20.01 EUR |
30+ | 16.19 EUR |
120+ | 15.24 EUR |
RGS80TSX2HRC11 |
Hersteller: ROHM Semiconductor
IGBT Transistors 1200V 40A Field Stop Trench IGBT. RGS80TSX2HR is a highly reliable IGBT for automotive inverter, heater.
IGBT Transistors 1200V 40A Field Stop Trench IGBT. RGS80TSX2HR is a highly reliable IGBT for automotive inverter, heater.
auf Bestellung 443 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 18.11 EUR |
10+ | 16.86 EUR |
25+ | 14.24 EUR |
100+ | 12.94 EUR |
250+ | 12.74 EUR |
450+ | 11.4 EUR |
900+ | 10.26 EUR |
RGSX5TS65DHRC11 |
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FLD 650V 114A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 114 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 43ns/113ns
Switching Energy: 3.32mJ (on), 1.9mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 79 nC
Current - Collector (Ic) (Max): 114 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 404 W
Description: IGBT TRENCH FLD 650V 114A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 114 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 43ns/113ns
Switching Energy: 3.32mJ (on), 1.9mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 79 nC
Current - Collector (Ic) (Max): 114 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 404 W
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 12.04 EUR |
30+ | 9.62 EUR |
120+ | 8.91 EUR |
RGSX5TS65EHRC11 |
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FLD 650V 114A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 116 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 43ns/113ns
Switching Energy: 3.44mJ (on), 1.9mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 79 nC
Current - Collector (Ic) (Max): 114 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 404 W
Description: IGBT TRENCH FLD 650V 114A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 116 ns
Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 75A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 43ns/113ns
Switching Energy: 3.44mJ (on), 1.9mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 79 nC
Current - Collector (Ic) (Max): 114 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 404 W
auf Bestellung 390 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 12.97 EUR |
30+ | 10.35 EUR |
120+ | 9.59 EUR |
RGSX5TS65EHRC11 |
Hersteller: ROHM Semiconductor
IGBT Transistors 8?s Short-Circuit Tolerance, 650V 75A, FRD Built-in, Automotive Field Stop Trench IGBT
IGBT Transistors 8?s Short-Circuit Tolerance, 650V 75A, FRD Built-in, Automotive Field Stop Trench IGBT
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 12.88 EUR |
25+ | 10.3 EUR |
100+ | 9.91 EUR |
RGW00TS65CHRC11 |
Hersteller: ROHM Semiconductor
IGBT Transistors High-Speed Fast Switching Type, 650V 50A, Automotive Hybrid IGBT with Built-In SiC-SBD
IGBT Transistors High-Speed Fast Switching Type, 650V 50A, Automotive Hybrid IGBT with Built-In SiC-SBD
auf Bestellung 463 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 21.49 EUR |
10+ | 18.94 EUR |
25+ | 18.78 EUR |
50+ | 16.37 EUR |
250+ | 14.84 EUR |
450+ | 13.6 EUR |
RGW00TS65DHRC11 |
Hersteller: ROHM Semiconductor
IGBT Transistors High-Speed Fast Switching Type, 650V 50A, FRD Built-in, TO-247N, Field Stop Trench IGBT for Automotive.
IGBT Transistors High-Speed Fast Switching Type, 650V 50A, FRD Built-in, TO-247N, Field Stop Trench IGBT for Automotive.
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 12.88 EUR |
10+ | 11.05 EUR |
25+ | 9.2 EUR |
250+ | 8.11 EUR |
450+ | 7.3 EUR |
900+ | 6.95 EUR |
RGW00TS65DHRC11 |
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 96A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 48ns/186ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 141 nC
Part Status: Active
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 254 W
Description: IGBT TRNCH FIELD 650V 96A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 48ns/186ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 141 nC
Part Status: Active
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 254 W
auf Bestellung 425 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 12.97 EUR |
10+ | 11.12 EUR |
RGW00TS65EHRC11 |
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 96A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 50ns/183ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 141 nC
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 254 W
Description: IGBT TRNCH FIELD 650V 96A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 50ns/183ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 141 nC
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 254 W
auf Bestellung 448 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 13.96 EUR |
10+ | 11.97 EUR |
RGW00TS65HRC11 |
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 96A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 48ns/186ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 141 nC
Part Status: Active
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 254 W
Description: IGBT TRNCH FIELD 650V 96A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 50A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 48ns/186ns
Test Condition: 400V, 25A, 10Ohm, 15V
Gate Charge: 141 nC
Part Status: Active
Current - Collector (Ic) (Max): 96 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 254 W
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 10.75 EUR |
10+ | 9.22 EUR |
450+ | 6.78 EUR |
RGW60TS65CHRC11 |
Hersteller: ROHM Semiconductor
IGBT Transistors High-Speed Fast Switching Type, 650V 30A, Automotive Hybrid IGBT with Built-In SiC-SBD
IGBT Transistors High-Speed Fast Switching Type, 650V 30A, Automotive Hybrid IGBT with Built-In SiC-SBD
auf Bestellung 473 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 19.98 EUR |
10+ | 17.62 EUR |
25+ | 17.34 EUR |
50+ | 16.79 EUR |
100+ | 15.21 EUR |
250+ | 14.94 EUR |
450+ | 13.78 EUR |
RGW60TS65DHRC11 |
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 64A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 87 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 36ns/107ns
Test Condition: 400V, 15A, 10Ohm, 15V
Gate Charge: 84 nC
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 178 W
Description: IGBT TRNCH FIELD 650V 64A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 87 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 36ns/107ns
Test Condition: 400V, 15A, 10Ohm, 15V
Gate Charge: 84 nC
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 178 W
auf Bestellung 425 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 10.63 EUR |
10+ | 9.11 EUR |
RGW60TS65EHRC11 |
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 64A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 146 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/101ns
Test Condition: 400V, 15A, 10Ohm, 15V
Gate Charge: 84 nC
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 178 W
Description: IGBT TRNCH FIELD 650V 64A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 146 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 37ns/101ns
Test Condition: 400V, 15A, 10Ohm, 15V
Gate Charge: 84 nC
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 178 W
auf Bestellung 420 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 7.87 EUR |
10+ | 6.74 EUR |
RGW60TS65EHRC11 |
Hersteller: ROHM Semiconductor
IGBT Transistors High-Speed Fast Switching Type, 650V 30A, FRD Built-in, TO-247N, Field Stop Trench IGBT for Automotive.
IGBT Transistors High-Speed Fast Switching Type, 650V 30A, FRD Built-in, TO-247N, Field Stop Trench IGBT for Automotive.
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 7.81 EUR |
10+ | 6.69 EUR |
450+ | 6.67 EUR |
900+ | 6.02 EUR |
RGW60TS65HRC11 |
Hersteller: ROHM Semiconductor
IGBT Transistors High-Speed Fast Switching Type, 650V 30A, TO-247N, Field Stop Trench IGBT for Automotive.
IGBT Transistors High-Speed Fast Switching Type, 650V 30A, TO-247N, Field Stop Trench IGBT for Automotive.
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 9.93 EUR |
10+ | 8.34 EUR |
25+ | 7.44 EUR |
250+ | 6.9 EUR |
450+ | 5.49 EUR |
900+ | 4.82 EUR |
RGW60TS65HRC11 |
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 64A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 36ns/107ns
Test Condition: 400V, 15A, 10Ohm, 15V
Gate Charge: 84 nC
Part Status: Active
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 178 W
Description: IGBT TRNCH FIELD 650V 64A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 30A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 36ns/107ns
Test Condition: 400V, 15A, 10Ohm, 15V
Gate Charge: 84 nC
Part Status: Active
Current - Collector (Ic) (Max): 64 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 178 W
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 9.98 EUR |
10+ | 8.39 EUR |
450+ | 6.03 EUR |
RGW80TS65CHRC11 |
Hersteller: Rohm Semiconductor
Description: IGBT 650V 81A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 33 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Supplier Device Package: TO-247N
Td (on/off) @ 25°C: 43ns/145ns
Switching Energy: 120µJ (on), 340µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 81 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 214 W
Description: IGBT 650V 81A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 33 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Supplier Device Package: TO-247N
Td (on/off) @ 25°C: 43ns/145ns
Switching Energy: 120µJ (on), 340µJ (off)
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 81 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 214 W
auf Bestellung 357 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 20.86 EUR |
30+ | 16.89 EUR |
120+ | 15.9 EUR |
RGW80TS65DHRC11 |
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 80A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 42ns/148ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 214 W
Description: IGBT TRNCH FIELD 650V 80A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 42ns/148ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 214 W
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 8.1 EUR |
10+ | 6.94 EUR |
450+ | 5.99 EUR |
RGW80TS65EHRC11 |
Hersteller: ROHM Semiconductor
IGBT Transistors High-Speed Fast Switching Type, 650V 40A, FRD Built-in, TO-247N, Field Stop Trench IGBT for Automotive.
IGBT Transistors High-Speed Fast Switching Type, 650V 40A, FRD Built-in, TO-247N, Field Stop Trench IGBT for Automotive.
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 12.76 EUR |
10+ | 10.98 EUR |
25+ | 9.91 EUR |
100+ | 9.73 EUR |
250+ | 8.96 EUR |
RGW80TS65EHRC11 |
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 80A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 86 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 43ns/148ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 214 W
Description: IGBT TRNCH FIELD 650V 80A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 86 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 43ns/148ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 214 W
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 12.58 EUR |
10+ | 10.79 EUR |
450+ | 7.94 EUR |
RGW80TS65HRC11 |
Hersteller: Rohm Semiconductor
Description: IGBT TRNCH FIELD 650V 80A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 42ns/148ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 214 W
Description: IGBT TRNCH FIELD 650V 80A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 42ns/148ns
Test Condition: 400V, 20A, 10Ohm, 15V
Gate Charge: 110 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 214 W
auf Bestellung 440 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 10.98 EUR |
10+ | 9.21 EUR |
RGW80TS65HRC11 |
Hersteller: ROHM Semiconductor
IGBT Transistors High-Speed Fast Switching Type, 650V 40A, TO-247N, Field Stop Trench IGBT for Automotive.
IGBT Transistors High-Speed Fast Switching Type, 650V 40A, TO-247N, Field Stop Trench IGBT for Automotive.
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 10.89 EUR |
10+ | 9.15 EUR |
25+ | 9.01 EUR |
250+ | 8.47 EUR |
450+ | 5.63 EUR |
900+ | 5.3 EUR |
RGWX5TS65DHRC11 |
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FLD 650V 132A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 62ns/237ns
Test Condition: 400V, 37.5A, 10Ohm, 15V
Gate Charge: 213 nC
Current - Collector (Ic) (Max): 132 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 348 W
Description: IGBT TRENCH FLD 650V 132A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 92 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 62ns/237ns
Test Condition: 400V, 37.5A, 10Ohm, 15V
Gate Charge: 213 nC
Current - Collector (Ic) (Max): 132 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 348 W
auf Bestellung 332 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 10.19 EUR |
10+ | 8.73 EUR |
RGWX5TS65HRC11 |
Hersteller: Rohm Semiconductor
Description: IGBT TRENCH FLD 650V 132A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 62ns/237ns
Test Condition: 400V, 37.5A, 10Ohm, 15V
Gate Charge: 213 nC
Part Status: Active
Current - Collector (Ic) (Max): 132 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 348 W
Description: IGBT TRENCH FLD 650V 132A TO247N
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 75A
Supplier Device Package: TO-247N
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 62ns/237ns
Test Condition: 400V, 37.5A, 10Ohm, 15V
Gate Charge: 213 nC
Part Status: Active
Current - Collector (Ic) (Max): 132 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 300 A
Power - Max: 348 W
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 13.45 EUR |
10+ | 11.52 EUR |
450+ | 8.47 EUR |
SCS210KE2HRC11 |
Hersteller: Rohm Semiconductor
Description: DIODE ARR SIC SCHOT 1200V TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 5
Voltage Coupled to Current - Reverse Leakage @ Vr: 1200
Description: DIODE ARR SIC SCHOT 1200V TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 5 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 5
Voltage Coupled to Current - Reverse Leakage @ Vr: 1200
auf Bestellung 450 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 11.72 EUR |
30+ | 9.35 EUR |
120+ | 8.66 EUR |
SCS210KE2HRC11 |
Hersteller: ROHM Semiconductor
Schottky Diodes & Rectifiers AECQ
Schottky Diodes & Rectifiers AECQ
auf Bestellung 889 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 11.63 EUR |
10+ | 9.29 EUR |
100+ | 8.94 EUR |
SCS220AE2HRC11 |
Hersteller: ROHM Semiconductor
Schottky Diodes & Rectifiers AECQ
Schottky Diodes & Rectifiers AECQ
auf Bestellung 2168 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 15.24 EUR |
10+ | 11.79 EUR |
100+ | 10.88 EUR |
450+ | 9.8 EUR |
900+ | 8.64 EUR |
2700+ | 8.24 EUR |