Produkte > STARPOWER SEMICONDUCTOR > Alle Produkte des Herstellers STARPOWER SEMICONDUCTOR (206) > Seite 4 nach 4
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
---|---|---|---|---|---|
GD75HHU120C5S | STARPOWER SEMICONDUCTOR | GD75HHU120C5S IGBT modules |
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GD75MLX65L3S | STARPOWER SEMICONDUCTOR | GD75MLX65L3S IGBT modules |
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GD75PIX65C6S | STARPOWER SEMICONDUCTOR | GD75PIX65C6S IGBT modules |
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GD75PIY120C6SN | STARPOWER SEMICONDUCTOR | GD75PIY120C6SN IGBT modules |
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GD800HFX170C3S | STARPOWER SEMICONDUCTOR | GD800HFX170C3S IGBT modules |
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GD800HFY120C3S | STARPOWER SEMICONDUCTOR | GD800HFY120C3S IGBT modules |
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GD800SGX170C3S | STARPOWER SEMICONDUCTOR | GD800SGX170C3S IGBT modules |
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GD80TLQ120F1S | STARPOWER SEMICONDUCTOR | GD80TLQ120F1S IGBT modules |
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GD900HFY120P1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 900A Case: P1.0 Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 1.8kA Technology: Advanced Trench FS IGBT Mechanical mounting: screw |
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GD900HFY120P1S | STARPOWER SEMICONDUCTOR |
Category: IGBT modules Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A Type of semiconductor module: IGBT Semiconductor structure: transistor/transistor Topology: IGBT half-bridge Max. off-state voltage: 1.2kV Collector current: 900A Case: P1.0 Electrical mounting: screw Gate-emitter voltage: ±20V Pulsed collector current: 1.8kA Technology: Advanced Trench FS IGBT Mechanical mounting: screw Anzahl je Verpackung: 9 Stücke |
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MD120HFR120C2S | STARPOWER SEMICONDUCTOR |
![]() Description: Module; transistor/transistor; 1.2kV; 120A; C2 62mm; Idm: 548A; SiC Semiconductor structure: transistor/transistor Case: C2 62mm Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: SiC Gate-source voltage: -4...20V Topology: MOSFET half-bridge Pulsed drain current: 548A Type of semiconductor module: MOSFET transistor Drain-source voltage: 1.2kV Drain current: 120A On-state resistance: 15mΩ |
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MD120HFR120C2S | STARPOWER SEMICONDUCTOR |
![]() Description: Module; transistor/transistor; 1.2kV; 120A; C2 62mm; Idm: 548A; SiC Semiconductor structure: transistor/transistor Case: C2 62mm Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: SiC Gate-source voltage: -4...20V Topology: MOSFET half-bridge Pulsed drain current: 548A Type of semiconductor module: MOSFET transistor Drain-source voltage: 1.2kV Drain current: 120A On-state resistance: 15mΩ Anzahl je Verpackung: 12 Stücke |
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MD15FSR120L2SF | STARPOWER SEMICONDUCTOR |
![]() Description: Module; transistor/transistor; 1.2kV; 15A; L2; Press-in PCB; 101W Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 15A On-state resistance: 0.12Ω Power dissipation: 101W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: SiC Gate-source voltage: -4...22V Topology: MOSFET three-phase bridge; NTC thermistor Pulsed drain current: 77A Type of semiconductor module: MOSFET transistor Case: L2 |
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MD15FSR120L2SF | STARPOWER SEMICONDUCTOR |
![]() Description: Module; transistor/transistor; 1.2kV; 15A; L2; Press-in PCB; 101W Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 15A On-state resistance: 0.12Ω Power dissipation: 101W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: SiC Gate-source voltage: -4...22V Topology: MOSFET three-phase bridge; NTC thermistor Pulsed drain current: 77A Type of semiconductor module: MOSFET transistor Case: L2 Anzahl je Verpackung: 24 Stücke |
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MD200HFR120C2S | STARPOWER SEMICONDUCTOR |
![]() Description: Module; transistor/transistor; 1.2kV; 200A; C2 62mm; Idm: 822A; SiC Semiconductor structure: transistor/transistor Case: C2 62mm Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: SiC Gate-source voltage: ±20V Topology: MOSFET half-bridge Pulsed drain current: 822A Type of semiconductor module: MOSFET transistor Drain-source voltage: 1.2kV Drain current: 200A On-state resistance: 10mΩ |
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MD200HFR120C2S | STARPOWER SEMICONDUCTOR |
![]() Description: Module; transistor/transistor; 1.2kV; 200A; C2 62mm; Idm: 822A; SiC Semiconductor structure: transistor/transistor Case: C2 62mm Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: SiC Gate-source voltage: ±20V Topology: MOSFET half-bridge Pulsed drain current: 822A Type of semiconductor module: MOSFET transistor Drain-source voltage: 1.2kV Drain current: 200A On-state resistance: 10mΩ Anzahl je Verpackung: 6 Stücke |
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MD300HFC170C2S | STARPOWER SEMICONDUCTOR | MD300HFC170C2S Transistor modules MOSFET |
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MD300HFR120B3S | STARPOWER SEMICONDUCTOR |
![]() Description: Module; transistor/transistor; 1.2kV; 300A; B3.7; Idm: 1.096kA; SiC Semiconductor structure: transistor/transistor Case: B3.7 Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: SiC Gate-source voltage: ±20V Topology: MOSFET half-bridge Pulsed drain current: 1.096kA Type of semiconductor module: MOSFET transistor Drain-source voltage: 1.2kV Drain current: 300A On-state resistance: 7.5mΩ |
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MD300HFR120B3S | STARPOWER SEMICONDUCTOR |
![]() Description: Module; transistor/transistor; 1.2kV; 300A; B3.7; Idm: 1.096kA; SiC Semiconductor structure: transistor/transistor Case: B3.7 Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: SiC Gate-source voltage: ±20V Topology: MOSFET half-bridge Pulsed drain current: 1.096kA Type of semiconductor module: MOSFET transistor Drain-source voltage: 1.2kV Drain current: 300A On-state resistance: 7.5mΩ Anzahl je Verpackung: 12 Stücke |
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MD300HFR120C2S | STARPOWER SEMICONDUCTOR |
![]() Description: Module; transistor/transistor; 1.2kV; 300A; C2 62mm; Idm: 1.096kA Semiconductor structure: transistor/transistor Case: C2 62mm Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: SiC Gate-source voltage: -4...22V Topology: MOSFET half-bridge Pulsed drain current: 1.096kA Type of semiconductor module: MOSFET transistor Drain-source voltage: 1.2kV Drain current: 300A On-state resistance: 7.5mΩ |
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MD300HFR120C2S | STARPOWER SEMICONDUCTOR |
![]() Description: Module; transistor/transistor; 1.2kV; 300A; C2 62mm; Idm: 1.096kA Semiconductor structure: transistor/transistor Case: C2 62mm Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: SiC Gate-source voltage: -4...22V Topology: MOSFET half-bridge Pulsed drain current: 1.096kA Type of semiconductor module: MOSFET transistor Drain-source voltage: 1.2kV Drain current: 300A On-state resistance: 7.5mΩ Anzahl je Verpackung: 12 Stücke |
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MD30FSR120L2SF | STARPOWER SEMICONDUCTOR |
![]() Description: Module; transistor/transistor; 1.2kV; 30A; L2; Press-in PCB; 203W Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 30A On-state resistance: 60mΩ Power dissipation: 203W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: SiC Gate-source voltage: -4...22V Topology: MOSFET three-phase bridge; NTC thermistor Pulsed drain current: 154A Type of semiconductor module: MOSFET transistor Case: L2 |
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MD30FSR120L2SF | STARPOWER SEMICONDUCTOR |
![]() Description: Module; transistor/transistor; 1.2kV; 30A; L2; Press-in PCB; 203W Semiconductor structure: transistor/transistor Drain-source voltage: 1.2kV Drain current: 30A On-state resistance: 60mΩ Power dissipation: 203W Electrical mounting: Press-in PCB Mechanical mounting: screw Technology: SiC Gate-source voltage: -4...22V Topology: MOSFET three-phase bridge; NTC thermistor Pulsed drain current: 154A Type of semiconductor module: MOSFET transistor Case: L2 Anzahl je Verpackung: 12 Stücke |
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MD400HFR120C2S | STARPOWER SEMICONDUCTOR |
![]() Description: Module; transistor/transistor; 1.2kV; 400A; C2 62mm; Idm: 1.664kA Semiconductor structure: transistor/transistor Case: C2 62mm Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: SiC Gate-source voltage: -4...22V Topology: MOSFET half-bridge Pulsed drain current: 1.664kA Type of semiconductor module: MOSFET transistor Drain-source voltage: 1.2kV Drain current: 400A On-state resistance: 5.8mΩ |
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MD400HFR120C2S | STARPOWER SEMICONDUCTOR |
![]() Description: Module; transistor/transistor; 1.2kV; 400A; C2 62mm; Idm: 1.664kA Semiconductor structure: transistor/transistor Case: C2 62mm Electrical mounting: FASTON connectors; screw Mechanical mounting: screw Technology: SiC Gate-source voltage: -4...22V Topology: MOSFET half-bridge Pulsed drain current: 1.664kA Type of semiconductor module: MOSFET transistor Drain-source voltage: 1.2kV Drain current: 400A On-state resistance: 5.8mΩ Anzahl je Verpackung: 12 Stücke |
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MD75FSC120L3SF | STARPOWER SEMICONDUCTOR | MD75FSC120L3SF Transistor modules MOSFET |
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GD75HHU120C5S |
Hersteller: STARPOWER SEMICONDUCTOR
GD75HHU120C5S IGBT modules
GD75HHU120C5S IGBT modules
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GD75MLX65L3S |
Hersteller: STARPOWER SEMICONDUCTOR
GD75MLX65L3S IGBT modules
GD75MLX65L3S IGBT modules
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GD75PIX65C6S |
Hersteller: STARPOWER SEMICONDUCTOR
GD75PIX65C6S IGBT modules
GD75PIX65C6S IGBT modules
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GD75PIY120C6SN |
Hersteller: STARPOWER SEMICONDUCTOR
GD75PIY120C6SN IGBT modules
GD75PIY120C6SN IGBT modules
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GD800HFX170C3S |
Hersteller: STARPOWER SEMICONDUCTOR
GD800HFX170C3S IGBT modules
GD800HFX170C3S IGBT modules
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GD800HFY120C3S |
Hersteller: STARPOWER SEMICONDUCTOR
GD800HFY120C3S IGBT modules
GD800HFY120C3S IGBT modules
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GD800SGX170C3S |
Hersteller: STARPOWER SEMICONDUCTOR
GD800SGX170C3S IGBT modules
GD800SGX170C3S IGBT modules
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GD80TLQ120F1S |
Hersteller: STARPOWER SEMICONDUCTOR
GD80TLQ120F1S IGBT modules
GD80TLQ120F1S IGBT modules
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GD900HFY120P1S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 900A
Case: P1.0
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.8kA
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 900A
Case: P1.0
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.8kA
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
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GD900HFY120P1S |
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 900A
Case: P1.0
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.8kA
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 9 Stücke
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 900A
Case: P1.0
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.8kA
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 9 Stücke
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MD120HFR120C2S |
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Hersteller: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 120A; C2 62mm; Idm: 548A; SiC
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: SiC
Gate-source voltage: -4...20V
Topology: MOSFET half-bridge
Pulsed drain current: 548A
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 1.2kV
Drain current: 120A
On-state resistance: 15mΩ
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 120A; C2 62mm; Idm: 548A; SiC
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: SiC
Gate-source voltage: -4...20V
Topology: MOSFET half-bridge
Pulsed drain current: 548A
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 1.2kV
Drain current: 120A
On-state resistance: 15mΩ
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MD120HFR120C2S |
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Hersteller: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 120A; C2 62mm; Idm: 548A; SiC
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: SiC
Gate-source voltage: -4...20V
Topology: MOSFET half-bridge
Pulsed drain current: 548A
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 1.2kV
Drain current: 120A
On-state resistance: 15mΩ
Anzahl je Verpackung: 12 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 120A; C2 62mm; Idm: 548A; SiC
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: SiC
Gate-source voltage: -4...20V
Topology: MOSFET half-bridge
Pulsed drain current: 548A
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 1.2kV
Drain current: 120A
On-state resistance: 15mΩ
Anzahl je Verpackung: 12 Stücke
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MD15FSR120L2SF |
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Hersteller: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 15A; L2; Press-in PCB; 101W
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 15A
On-state resistance: 0.12Ω
Power dissipation: 101W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: SiC
Gate-source voltage: -4...22V
Topology: MOSFET three-phase bridge; NTC thermistor
Pulsed drain current: 77A
Type of semiconductor module: MOSFET transistor
Case: L2
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 15A; L2; Press-in PCB; 101W
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 15A
On-state resistance: 0.12Ω
Power dissipation: 101W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: SiC
Gate-source voltage: -4...22V
Topology: MOSFET three-phase bridge; NTC thermistor
Pulsed drain current: 77A
Type of semiconductor module: MOSFET transistor
Case: L2
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MD15FSR120L2SF |
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Hersteller: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 15A; L2; Press-in PCB; 101W
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 15A
On-state resistance: 0.12Ω
Power dissipation: 101W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: SiC
Gate-source voltage: -4...22V
Topology: MOSFET three-phase bridge; NTC thermistor
Pulsed drain current: 77A
Type of semiconductor module: MOSFET transistor
Case: L2
Anzahl je Verpackung: 24 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 15A; L2; Press-in PCB; 101W
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 15A
On-state resistance: 0.12Ω
Power dissipation: 101W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: SiC
Gate-source voltage: -4...22V
Topology: MOSFET three-phase bridge; NTC thermistor
Pulsed drain current: 77A
Type of semiconductor module: MOSFET transistor
Case: L2
Anzahl je Verpackung: 24 Stücke
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MD200HFR120C2S |
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Hersteller: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 200A; C2 62mm; Idm: 822A; SiC
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: SiC
Gate-source voltage: ±20V
Topology: MOSFET half-bridge
Pulsed drain current: 822A
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 1.2kV
Drain current: 200A
On-state resistance: 10mΩ
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 200A; C2 62mm; Idm: 822A; SiC
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: SiC
Gate-source voltage: ±20V
Topology: MOSFET half-bridge
Pulsed drain current: 822A
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 1.2kV
Drain current: 200A
On-state resistance: 10mΩ
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MD200HFR120C2S |
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Hersteller: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 200A; C2 62mm; Idm: 822A; SiC
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: SiC
Gate-source voltage: ±20V
Topology: MOSFET half-bridge
Pulsed drain current: 822A
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 1.2kV
Drain current: 200A
On-state resistance: 10mΩ
Anzahl je Verpackung: 6 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 200A; C2 62mm; Idm: 822A; SiC
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: SiC
Gate-source voltage: ±20V
Topology: MOSFET half-bridge
Pulsed drain current: 822A
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 1.2kV
Drain current: 200A
On-state resistance: 10mΩ
Anzahl je Verpackung: 6 Stücke
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MD300HFC170C2S |
Hersteller: STARPOWER SEMICONDUCTOR
MD300HFC170C2S Transistor modules MOSFET
MD300HFC170C2S Transistor modules MOSFET
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MD300HFR120B3S |
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Hersteller: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 300A; B3.7; Idm: 1.096kA; SiC
Semiconductor structure: transistor/transistor
Case: B3.7
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: SiC
Gate-source voltage: ±20V
Topology: MOSFET half-bridge
Pulsed drain current: 1.096kA
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 1.2kV
Drain current: 300A
On-state resistance: 7.5mΩ
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 300A; B3.7; Idm: 1.096kA; SiC
Semiconductor structure: transistor/transistor
Case: B3.7
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: SiC
Gate-source voltage: ±20V
Topology: MOSFET half-bridge
Pulsed drain current: 1.096kA
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 1.2kV
Drain current: 300A
On-state resistance: 7.5mΩ
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MD300HFR120B3S |
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Hersteller: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 300A; B3.7; Idm: 1.096kA; SiC
Semiconductor structure: transistor/transistor
Case: B3.7
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: SiC
Gate-source voltage: ±20V
Topology: MOSFET half-bridge
Pulsed drain current: 1.096kA
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 1.2kV
Drain current: 300A
On-state resistance: 7.5mΩ
Anzahl je Verpackung: 12 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 300A; B3.7; Idm: 1.096kA; SiC
Semiconductor structure: transistor/transistor
Case: B3.7
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: SiC
Gate-source voltage: ±20V
Topology: MOSFET half-bridge
Pulsed drain current: 1.096kA
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 1.2kV
Drain current: 300A
On-state resistance: 7.5mΩ
Anzahl je Verpackung: 12 Stücke
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MD300HFR120C2S |
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Hersteller: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 300A; C2 62mm; Idm: 1.096kA
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: SiC
Gate-source voltage: -4...22V
Topology: MOSFET half-bridge
Pulsed drain current: 1.096kA
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 1.2kV
Drain current: 300A
On-state resistance: 7.5mΩ
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 300A; C2 62mm; Idm: 1.096kA
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: SiC
Gate-source voltage: -4...22V
Topology: MOSFET half-bridge
Pulsed drain current: 1.096kA
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 1.2kV
Drain current: 300A
On-state resistance: 7.5mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MD300HFR120C2S |
![]() |
Hersteller: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 300A; C2 62mm; Idm: 1.096kA
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: SiC
Gate-source voltage: -4...22V
Topology: MOSFET half-bridge
Pulsed drain current: 1.096kA
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 1.2kV
Drain current: 300A
On-state resistance: 7.5mΩ
Anzahl je Verpackung: 12 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 300A; C2 62mm; Idm: 1.096kA
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: SiC
Gate-source voltage: -4...22V
Topology: MOSFET half-bridge
Pulsed drain current: 1.096kA
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 1.2kV
Drain current: 300A
On-state resistance: 7.5mΩ
Anzahl je Verpackung: 12 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MD30FSR120L2SF |
![]() |
Hersteller: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; L2; Press-in PCB; 203W
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
On-state resistance: 60mΩ
Power dissipation: 203W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: SiC
Gate-source voltage: -4...22V
Topology: MOSFET three-phase bridge; NTC thermistor
Pulsed drain current: 154A
Type of semiconductor module: MOSFET transistor
Case: L2
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; L2; Press-in PCB; 203W
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
On-state resistance: 60mΩ
Power dissipation: 203W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: SiC
Gate-source voltage: -4...22V
Topology: MOSFET three-phase bridge; NTC thermistor
Pulsed drain current: 154A
Type of semiconductor module: MOSFET transistor
Case: L2
Produkt ist nicht verfügbar
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Stück im Wert von UAH
MD30FSR120L2SF |
![]() |
Hersteller: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; L2; Press-in PCB; 203W
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
On-state resistance: 60mΩ
Power dissipation: 203W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: SiC
Gate-source voltage: -4...22V
Topology: MOSFET three-phase bridge; NTC thermistor
Pulsed drain current: 154A
Type of semiconductor module: MOSFET transistor
Case: L2
Anzahl je Verpackung: 12 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 30A; L2; Press-in PCB; 203W
Semiconductor structure: transistor/transistor
Drain-source voltage: 1.2kV
Drain current: 30A
On-state resistance: 60mΩ
Power dissipation: 203W
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: SiC
Gate-source voltage: -4...22V
Topology: MOSFET three-phase bridge; NTC thermistor
Pulsed drain current: 154A
Type of semiconductor module: MOSFET transistor
Case: L2
Anzahl je Verpackung: 12 Stücke
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MD400HFR120C2S |
![]() |
Hersteller: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 400A; C2 62mm; Idm: 1.664kA
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: SiC
Gate-source voltage: -4...22V
Topology: MOSFET half-bridge
Pulsed drain current: 1.664kA
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 1.2kV
Drain current: 400A
On-state resistance: 5.8mΩ
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 400A; C2 62mm; Idm: 1.664kA
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: SiC
Gate-source voltage: -4...22V
Topology: MOSFET half-bridge
Pulsed drain current: 1.664kA
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 1.2kV
Drain current: 400A
On-state resistance: 5.8mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MD400HFR120C2S |
![]() |
Hersteller: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 400A; C2 62mm; Idm: 1.664kA
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: SiC
Gate-source voltage: -4...22V
Topology: MOSFET half-bridge
Pulsed drain current: 1.664kA
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 1.2kV
Drain current: 400A
On-state resistance: 5.8mΩ
Anzahl je Verpackung: 12 Stücke
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 400A; C2 62mm; Idm: 1.664kA
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Technology: SiC
Gate-source voltage: -4...22V
Topology: MOSFET half-bridge
Pulsed drain current: 1.664kA
Type of semiconductor module: MOSFET transistor
Drain-source voltage: 1.2kV
Drain current: 400A
On-state resistance: 5.8mΩ
Anzahl je Verpackung: 12 Stücke
Produkt ist nicht verfügbar
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MD75FSC120L3SF |
Hersteller: STARPOWER SEMICONDUCTOR
MD75FSC120L3SF Transistor modules MOSFET
MD75FSC120L3SF Transistor modules MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
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