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GD50HFU120C1S STARPOWER SEMICONDUCTOR GD50HFU120C1S IGBT modules
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GD50HFX170C1S STARPOWER SEMICONDUCTOR GD50HFX170C1S IGBT modules
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GD50HFX65C1S STARPOWER SEMICONDUCTOR GD50HFX65C1S IGBT modules
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GD50HHU120C5S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Technology: NPT Ultra Fast IGBT
Case: C5 45mm
Gate-emitter voltage: ±20V
Type of semiconductor module: IGBT
Collector current: 50A
Pulsed collector current: 100A
Electrical mounting: Press-in PCB
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Mechanical mounting: screw
Topology: H-bridge
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GD50HHU120C5S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Technology: NPT Ultra Fast IGBT
Case: C5 45mm
Gate-emitter voltage: ±20V
Type of semiconductor module: IGBT
Collector current: 50A
Pulsed collector current: 100A
Electrical mounting: Press-in PCB
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Mechanical mounting: screw
Topology: H-bridge
Anzahl je Verpackung: 1 Stücke
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GD50PIX65C5S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 650V
Collector current: 50A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Trench FS IGBT
Mechanical mounting: screw
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GD50PIX65C5S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 650V
Collector current: 50A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
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GD50PIY120C5SN STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
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GD50PIY120C5SN STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 12 Stücke
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GD50PIY120C6SN STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
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GD50PIY120C6SN STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 10 Stücke
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GD50PJX65L3S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 650V
Collector current: 50A
Case: L3.0
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Trench FS IGBT
Mechanical mounting: screw
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GD50PJX65L3S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 650V
Collector current: 50A
Case: L3.0
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
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GD600HFX170C6S STARPOWER SEMICONDUCTOR GD600HFX170C6S IGBT modules
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GD600HFX65C2S STARPOWER SEMICONDUCTOR GD600HFX65C2S IGBT modules
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GD600HFX65C6S STARPOWER SEMICONDUCTOR GD600HFX65C6S IGBT modules
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GD600HFY120C2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: C2 62mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
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GD600HFY120C2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: C2 62mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
Anzahl je Verpackung: 12 Stücke
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GD600HFY120C6S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: C6 62mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
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GD600HFY120C6S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: C6 62mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
Anzahl je Verpackung: 10 Stücke
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GD600HFY120P1S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: P1.0
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
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GD600HFY120P1S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: P1.0
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
Anzahl je Verpackung: 9 Stücke
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GD600SGU120C2S STARPOWER SEMICONDUCTOR GD600SGU120C2S IGBT modules
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GD600SGX170C2S STARPOWER SEMICONDUCTOR GD600SGX170C2S IGBT modules
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GD600SGY120C2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of semiconductor module: IGBT
Topology: single transistor
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
Technology: Advanced Trench FS IGBT
Max. off-state voltage: 1.2kV
Case: C2 62mm
Semiconductor structure: single transistor
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GD600SGY120C2S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of semiconductor module: IGBT
Topology: single transistor
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
Technology: Advanced Trench FS IGBT
Max. off-state voltage: 1.2kV
Case: C2 62mm
Semiconductor structure: single transistor
Anzahl je Verpackung: 12 Stücke
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GD650HFX170P1S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 650A
Max. off-state voltage: 1.7kV
Case: P1.0
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Electrical mounting: screw
Technology: Trench FS IGBT
Semiconductor structure: transistor/transistor
Collector current: 650A
Gate-emitter voltage: ±20V
Pulsed collector current: 1.3kA
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GD650HFX170P1S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 650A
Max. off-state voltage: 1.7kV
Case: P1.0
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Electrical mounting: screw
Technology: Trench FS IGBT
Semiconductor structure: transistor/transistor
Collector current: 650A
Gate-emitter voltage: ±20V
Pulsed collector current: 1.3kA
Anzahl je Verpackung: 9 Stücke
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GD75FFX170C6S STARPOWER SEMICONDUCTOR GD75FFX170C6S IGBT modules
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GD75FFX65C5S STARPOWER SEMICONDUCTOR GD75FFX65C5S IGBT modules
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GD75FFY120C5S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Case: C5 45mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
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GD75FFY120C5S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Case: C5 45mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
Anzahl je Verpackung: 12 Stücke
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GD75FFY120C6S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Case: C6 62mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
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GD75FFY120C6S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Case: C6 62mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
Anzahl je Verpackung: 10 Stücke
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GD75FSY120L3S STARPOWER SEMICONDUCTOR GD75FSY120L3S IGBT modules
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GD75HFU120C1S STARPOWER SEMICONDUCTOR GD75HFU120C1S IGBT modules
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GD75HFX170C1S STARPOWER SEMICONDUCTOR GD75HFX170C1S IGBT modules
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GD75HFX65C1S STARPOWER SEMICONDUCTOR GD75HFX65C1S IGBT modules
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GD75HFY120C1S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
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GD75HFY120C1S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
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GD75HHU120C5S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Technology: NPT Ultra Fast IGBT
Case: C5 45mm
Gate-emitter voltage: ±20V
Type of semiconductor module: IGBT
Collector current: 75A
Pulsed collector current: 150A
Electrical mounting: Press-in PCB
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Mechanical mounting: screw
Topology: H-bridge
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GD75HHU120C5S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Technology: NPT Ultra Fast IGBT
Case: C5 45mm
Gate-emitter voltage: ±20V
Type of semiconductor module: IGBT
Collector current: 75A
Pulsed collector current: 150A
Electrical mounting: Press-in PCB
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Mechanical mounting: screw
Topology: H-bridge
Anzahl je Verpackung: 12 Stücke
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GD75MLX65L3S STARPOWER SEMICONDUCTOR GD75MLX65L3S IGBT modules
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GD75PIX65C6S STARPOWER SEMICONDUCTOR GD75PIX65C6S IGBT modules
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GD75PIY120C6SN STARPOWER SEMICONDUCTOR GD75PIY120C6SN IGBT modules
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GD800HFX170C3S STARPOWER SEMICONDUCTOR GD800HFX170C3S IGBT modules
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GD800HFY120C3S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 800A
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: C3 130mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 800A
Pulsed collector current: 1.6kA
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GD800HFY120C3S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 800A
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: C3 130mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 800A
Pulsed collector current: 1.6kA
Anzahl je Verpackung: 8 Stücke
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GD800SGX170C3S STARPOWER SEMICONDUCTOR GD800SGX170C3S IGBT modules
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GD80TLQ120F1S STARPOWER SEMICONDUCTOR GD80TLQ120F1S IGBT modules
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GD900HFY120P1S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 900A
Case: P1.0
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.8kA
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
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GD900HFY120P1S STARPOWER SEMICONDUCTOR Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 900A
Case: P1.0
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.8kA
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 9 Stücke
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MD120HFR120C2S STARPOWER SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDDABC0FB90EB65C0D3&compId=md120hfr120c2s.pdf?ci_sign=fdf4907312af2342386059777d8b8ca7bd9f06cb Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 120A; C2 62mm; Idm: 548A; SiC
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate-source voltage: -4...20V
Technology: SiC
On-state resistance: 15mΩ
Drain current: 120A
Pulsed drain current: 548A
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
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MD120HFR120C2S STARPOWER SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDDABC0FB90EB65C0D3&compId=md120hfr120c2s.pdf?ci_sign=fdf4907312af2342386059777d8b8ca7bd9f06cb Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 120A; C2 62mm; Idm: 548A; SiC
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate-source voltage: -4...20V
Technology: SiC
On-state resistance: 15mΩ
Drain current: 120A
Pulsed drain current: 548A
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
Anzahl je Verpackung: 12 Stücke
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MD15FSR120L2SF STARPOWER SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDDABC0F3B424E780D3&compId=MD15FSR120L2SF.pdf?ci_sign=01825681d0e4bc1c3353bd6c77b26da7af217446 Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 15A; L2; Press-in PCB; 101W
Semiconductor structure: transistor/transistor
Case: L2
Type of semiconductor module: MOSFET transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: SiC
Gate-source voltage: -4...22V
On-state resistance: 0.12Ω
Drain current: 15A
Pulsed drain current: 77A
Power dissipation: 101W
Drain-source voltage: 1.2kV
Topology: MOSFET three-phase bridge; NTC thermistor
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MD15FSR120L2SF STARPOWER SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDDABC0F3B424E780D3&compId=MD15FSR120L2SF.pdf?ci_sign=01825681d0e4bc1c3353bd6c77b26da7af217446 Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 15A; L2; Press-in PCB; 101W
Semiconductor structure: transistor/transistor
Case: L2
Type of semiconductor module: MOSFET transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: SiC
Gate-source voltage: -4...22V
On-state resistance: 0.12Ω
Drain current: 15A
Pulsed drain current: 77A
Power dissipation: 101W
Drain-source voltage: 1.2kV
Topology: MOSFET three-phase bridge; NTC thermistor
Anzahl je Verpackung: 24 Stücke
Produkt ist nicht verfügbar
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MD200HFR120C2S STARPOWER SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDDABC0FD4AB49320D3&compId=MD200HFR120C2S.pdf?ci_sign=755efc80056d28dadc83f6880083f346797d66e3 Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 200A; C2 62mm; Idm: 822A; SiC
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate-source voltage: ±20V
Technology: SiC
On-state resistance: 10mΩ
Drain current: 200A
Pulsed drain current: 822A
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
MD200HFR120C2S STARPOWER SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDDABC0FD4AB49320D3&compId=MD200HFR120C2S.pdf?ci_sign=755efc80056d28dadc83f6880083f346797d66e3 Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 200A; C2 62mm; Idm: 822A; SiC
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate-source voltage: ±20V
Technology: SiC
On-state resistance: 10mΩ
Drain current: 200A
Pulsed drain current: 822A
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
Anzahl je Verpackung: 6 Stücke
Produkt ist nicht verfügbar
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MD300HFC170C2S STARPOWER SEMICONDUCTOR MD300HFC170C2S Transistor modules MOSFET
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MD300HFR120B3S STARPOWER SEMICONDUCTOR pVersion=0046&contRep=ZT&docId=005056AB281E1EDDABC0FF3E20AFC0D3&compId=MD300HFR120B3S.pdf?ci_sign=d4d68748b1e2da41a45c3704b863485752b9241f Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 300A; B3.7; Idm: 1.096kA; SiC
Semiconductor structure: transistor/transistor
Case: B3.7
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate-source voltage: ±20V
Technology: SiC
On-state resistance: 7.5mΩ
Drain current: 300A
Pulsed drain current: 1.096kA
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
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GD50HFU120C1S
Hersteller: STARPOWER SEMICONDUCTOR
GD50HFU120C1S IGBT modules
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GD50HFX170C1S
Hersteller: STARPOWER SEMICONDUCTOR
GD50HFX170C1S IGBT modules
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GD50HFX65C1S
Hersteller: STARPOWER SEMICONDUCTOR
GD50HFX65C1S IGBT modules
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GD50HHU120C5S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Technology: NPT Ultra Fast IGBT
Case: C5 45mm
Gate-emitter voltage: ±20V
Type of semiconductor module: IGBT
Collector current: 50A
Pulsed collector current: 100A
Electrical mounting: Press-in PCB
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Mechanical mounting: screw
Topology: H-bridge
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GD50HHU120C5S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Technology: NPT Ultra Fast IGBT
Case: C5 45mm
Gate-emitter voltage: ±20V
Type of semiconductor module: IGBT
Collector current: 50A
Pulsed collector current: 100A
Electrical mounting: Press-in PCB
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Mechanical mounting: screw
Topology: H-bridge
Anzahl je Verpackung: 1 Stücke
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GD50PIX65C5S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 650V
Collector current: 50A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Trench FS IGBT
Mechanical mounting: screw
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GD50PIX65C5S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 650V
Collector current: 50A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
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GD50PIY120C5SN
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
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GD50PIY120C5SN
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: C5 45mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 12 Stücke
Produkt ist nicht verfügbar
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GD50PIY120C6SN
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
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GD50PIY120C6SN
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 1200V; screw
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 1.2kV
Collector current: 50A
Case: C6 62mm
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
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GD50PJX65L3S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 650V
Collector current: 50A
Case: L3.0
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Trench FS IGBT
Mechanical mounting: screw
Produkt ist nicht verfügbar
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GD50PJX65L3S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; diode/transistor; boost chopper; Urmax: 650V; Ic: 50A
Type of semiconductor module: IGBT
Semiconductor structure: diode/transistor
Topology: boost chopper; IGBT three-phase bridge OE output; NTC thermistor; three-phase diode bridge
Max. off-state voltage: 650V
Collector current: 50A
Case: L3.0
Electrical mounting: Press-in PCB
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Technology: Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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GD600HFX170C6S
Hersteller: STARPOWER SEMICONDUCTOR
GD600HFX170C6S IGBT modules
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GD600HFX65C2S
Hersteller: STARPOWER SEMICONDUCTOR
GD600HFX65C2S IGBT modules
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GD600HFX65C6S
Hersteller: STARPOWER SEMICONDUCTOR
GD600HFX65C6S IGBT modules
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GD600HFY120C2S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: C2 62mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
Produkt ist nicht verfügbar
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GD600HFY120C2S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Max. off-state voltage: 1.2kV
Electrical mounting: FASTON connectors; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: C2 62mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
Anzahl je Verpackung: 12 Stücke
Produkt ist nicht verfügbar
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GD600HFY120C6S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: C6 62mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
Produkt ist nicht verfügbar
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GD600HFY120C6S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB; screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: C6 62mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
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GD600HFY120P1S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: P1.0
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
Produkt ist nicht verfügbar
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GD600HFY120P1S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 600A
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: P1.0
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
Anzahl je Verpackung: 9 Stücke
Produkt ist nicht verfügbar
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GD600SGU120C2S
Hersteller: STARPOWER SEMICONDUCTOR
GD600SGU120C2S IGBT modules
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GD600SGX170C2S
Hersteller: STARPOWER SEMICONDUCTOR
GD600SGX170C2S IGBT modules
Produkt ist nicht verfügbar
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GD600SGY120C2S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of semiconductor module: IGBT
Topology: single transistor
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
Technology: Advanced Trench FS IGBT
Max. off-state voltage: 1.2kV
Case: C2 62mm
Semiconductor structure: single transistor
Produkt ist nicht verfügbar
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GD600SGY120C2S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; single transistor; single transistor; Urmax: 1200V
Type of semiconductor module: IGBT
Topology: single transistor
Mechanical mounting: screw
Electrical mounting: screw
Gate-emitter voltage: ±20V
Collector current: 600A
Pulsed collector current: 1.2kA
Technology: Advanced Trench FS IGBT
Max. off-state voltage: 1.2kV
Case: C2 62mm
Semiconductor structure: single transistor
Anzahl je Verpackung: 12 Stücke
Produkt ist nicht verfügbar
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GD650HFX170P1S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 650A
Max. off-state voltage: 1.7kV
Case: P1.0
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Electrical mounting: screw
Technology: Trench FS IGBT
Semiconductor structure: transistor/transistor
Collector current: 650A
Gate-emitter voltage: ±20V
Pulsed collector current: 1.3kA
Produkt ist nicht verfügbar
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GD650HFX170P1S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 650A
Max. off-state voltage: 1.7kV
Case: P1.0
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Mechanical mounting: screw
Electrical mounting: screw
Technology: Trench FS IGBT
Semiconductor structure: transistor/transistor
Collector current: 650A
Gate-emitter voltage: ±20V
Pulsed collector current: 1.3kA
Anzahl je Verpackung: 9 Stücke
Produkt ist nicht verfügbar
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GD75FFX170C6S
Hersteller: STARPOWER SEMICONDUCTOR
GD75FFX170C6S IGBT modules
Produkt ist nicht verfügbar
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GD75FFX65C5S
Hersteller: STARPOWER SEMICONDUCTOR
GD75FFX65C5S IGBT modules
Produkt ist nicht verfügbar
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GD75FFY120C5S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Case: C5 45mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
Produkt ist nicht verfügbar
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GD75FFY120C5S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Case: C5 45mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
Anzahl je Verpackung: 12 Stücke
Produkt ist nicht verfügbar
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GD75FFY120C6S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Case: C6 62mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
Produkt ist nicht verfügbar
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GD75FFY120C6S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT three-phase bridge
Max. off-state voltage: 1.2kV
Electrical mounting: Press-in PCB
Type of semiconductor module: IGBT
Topology: IGBT three-phase bridge; NTC thermistor
Case: C6 62mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 75A
Pulsed collector current: 150A
Anzahl je Verpackung: 10 Stücke
Produkt ist nicht verfügbar
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GD75FSY120L3S
Hersteller: STARPOWER SEMICONDUCTOR
GD75FSY120L3S IGBT modules
Produkt ist nicht verfügbar
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GD75HFU120C1S
Hersteller: STARPOWER SEMICONDUCTOR
GD75HFU120C1S IGBT modules
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
GD75HFX170C1S
Hersteller: STARPOWER SEMICONDUCTOR
GD75HFX170C1S IGBT modules
Produkt ist nicht verfügbar
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GD75HFX65C1S
Hersteller: STARPOWER SEMICONDUCTOR
GD75HFX65C1S IGBT modules
Produkt ist nicht verfügbar
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GD75HFY120C1S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
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GD75HFY120C1S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 75A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 75A
Case: C1 34mm
Electrical mounting: FASTON connectors; screw
Gate-emitter voltage: ±20V
Pulsed collector current: 150A
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 1 Stücke
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GD75HHU120C5S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Technology: NPT Ultra Fast IGBT
Case: C5 45mm
Gate-emitter voltage: ±20V
Type of semiconductor module: IGBT
Collector current: 75A
Pulsed collector current: 150A
Electrical mounting: Press-in PCB
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Mechanical mounting: screw
Topology: H-bridge
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GD75HHU120C5S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; H-bridge; Urmax: 1200V; screw
Technology: NPT Ultra Fast IGBT
Case: C5 45mm
Gate-emitter voltage: ±20V
Type of semiconductor module: IGBT
Collector current: 75A
Pulsed collector current: 150A
Electrical mounting: Press-in PCB
Max. off-state voltage: 1.2kV
Semiconductor structure: transistor/transistor
Mechanical mounting: screw
Topology: H-bridge
Anzahl je Verpackung: 12 Stücke
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GD75MLX65L3S
Hersteller: STARPOWER SEMICONDUCTOR
GD75MLX65L3S IGBT modules
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GD75PIX65C6S
Hersteller: STARPOWER SEMICONDUCTOR
GD75PIX65C6S IGBT modules
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GD75PIY120C6SN
Hersteller: STARPOWER SEMICONDUCTOR
GD75PIY120C6SN IGBT modules
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GD800HFX170C3S
Hersteller: STARPOWER SEMICONDUCTOR
GD800HFX170C3S IGBT modules
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GD800HFY120C3S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 800A
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: C3 130mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 800A
Pulsed collector current: 1.6kA
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GD800HFY120C3S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 800A
Max. off-state voltage: 1.2kV
Electrical mounting: screw
Type of semiconductor module: IGBT
Topology: IGBT half-bridge
Case: C3 130mm
Mechanical mounting: screw
Semiconductor structure: transistor/transistor
Technology: Advanced Trench FS IGBT
Gate-emitter voltage: ±20V
Collector current: 800A
Pulsed collector current: 1.6kA
Anzahl je Verpackung: 8 Stücke
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GD800SGX170C3S
Hersteller: STARPOWER SEMICONDUCTOR
GD800SGX170C3S IGBT modules
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GD80TLQ120F1S
Hersteller: STARPOWER SEMICONDUCTOR
GD80TLQ120F1S IGBT modules
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GD900HFY120P1S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 900A
Case: P1.0
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.8kA
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
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GD900HFY120P1S
Hersteller: STARPOWER SEMICONDUCTOR
Category: IGBT modules
Description: Module: IGBT; transistor/transistor; IGBT half-bridge; Ic: 900A
Type of semiconductor module: IGBT
Semiconductor structure: transistor/transistor
Topology: IGBT half-bridge
Max. off-state voltage: 1.2kV
Collector current: 900A
Case: P1.0
Electrical mounting: screw
Gate-emitter voltage: ±20V
Pulsed collector current: 1.8kA
Technology: Advanced Trench FS IGBT
Mechanical mounting: screw
Anzahl je Verpackung: 9 Stücke
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MD120HFR120C2S pVersion=0046&contRep=ZT&docId=005056AB281E1EDDABC0FB90EB65C0D3&compId=md120hfr120c2s.pdf?ci_sign=fdf4907312af2342386059777d8b8ca7bd9f06cb
Hersteller: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 120A; C2 62mm; Idm: 548A; SiC
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate-source voltage: -4...20V
Technology: SiC
On-state resistance: 15mΩ
Drain current: 120A
Pulsed drain current: 548A
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
Produkt ist nicht verfügbar
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MD120HFR120C2S pVersion=0046&contRep=ZT&docId=005056AB281E1EDDABC0FB90EB65C0D3&compId=md120hfr120c2s.pdf?ci_sign=fdf4907312af2342386059777d8b8ca7bd9f06cb
Hersteller: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 120A; C2 62mm; Idm: 548A; SiC
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate-source voltage: -4...20V
Technology: SiC
On-state resistance: 15mΩ
Drain current: 120A
Pulsed drain current: 548A
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
Anzahl je Verpackung: 12 Stücke
Produkt ist nicht verfügbar
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MD15FSR120L2SF pVersion=0046&contRep=ZT&docId=005056AB281E1EDDABC0F3B424E780D3&compId=MD15FSR120L2SF.pdf?ci_sign=01825681d0e4bc1c3353bd6c77b26da7af217446
Hersteller: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 15A; L2; Press-in PCB; 101W
Semiconductor structure: transistor/transistor
Case: L2
Type of semiconductor module: MOSFET transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: SiC
Gate-source voltage: -4...22V
On-state resistance: 0.12Ω
Drain current: 15A
Pulsed drain current: 77A
Power dissipation: 101W
Drain-source voltage: 1.2kV
Topology: MOSFET three-phase bridge; NTC thermistor
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MD15FSR120L2SF pVersion=0046&contRep=ZT&docId=005056AB281E1EDDABC0F3B424E780D3&compId=MD15FSR120L2SF.pdf?ci_sign=01825681d0e4bc1c3353bd6c77b26da7af217446
Hersteller: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 15A; L2; Press-in PCB; 101W
Semiconductor structure: transistor/transistor
Case: L2
Type of semiconductor module: MOSFET transistor
Electrical mounting: Press-in PCB
Mechanical mounting: screw
Technology: SiC
Gate-source voltage: -4...22V
On-state resistance: 0.12Ω
Drain current: 15A
Pulsed drain current: 77A
Power dissipation: 101W
Drain-source voltage: 1.2kV
Topology: MOSFET three-phase bridge; NTC thermistor
Anzahl je Verpackung: 24 Stücke
Produkt ist nicht verfügbar
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MD200HFR120C2S pVersion=0046&contRep=ZT&docId=005056AB281E1EDDABC0FD4AB49320D3&compId=MD200HFR120C2S.pdf?ci_sign=755efc80056d28dadc83f6880083f346797d66e3
Hersteller: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 200A; C2 62mm; Idm: 822A; SiC
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate-source voltage: ±20V
Technology: SiC
On-state resistance: 10mΩ
Drain current: 200A
Pulsed drain current: 822A
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
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MD200HFR120C2S pVersion=0046&contRep=ZT&docId=005056AB281E1EDDABC0FD4AB49320D3&compId=MD200HFR120C2S.pdf?ci_sign=755efc80056d28dadc83f6880083f346797d66e3
Hersteller: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 200A; C2 62mm; Idm: 822A; SiC
Semiconductor structure: transistor/transistor
Case: C2 62mm
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate-source voltage: ±20V
Technology: SiC
On-state resistance: 10mΩ
Drain current: 200A
Pulsed drain current: 822A
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
Anzahl je Verpackung: 6 Stücke
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MD300HFC170C2S
Hersteller: STARPOWER SEMICONDUCTOR
MD300HFC170C2S Transistor modules MOSFET
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MD300HFR120B3S pVersion=0046&contRep=ZT&docId=005056AB281E1EDDABC0FF3E20AFC0D3&compId=MD300HFR120B3S.pdf?ci_sign=d4d68748b1e2da41a45c3704b863485752b9241f
Hersteller: STARPOWER SEMICONDUCTOR
Category: Transistor modules MOSFET
Description: Module; transistor/transistor; 1.2kV; 300A; B3.7; Idm: 1.096kA; SiC
Semiconductor structure: transistor/transistor
Case: B3.7
Electrical mounting: FASTON connectors; screw
Mechanical mounting: screw
Gate-source voltage: ±20V
Technology: SiC
On-state resistance: 7.5mΩ
Drain current: 300A
Pulsed drain current: 1.096kA
Drain-source voltage: 1.2kV
Topology: MOSFET half-bridge
Type of semiconductor module: MOSFET transistor
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