Produkte > STMICROELECTRONICS > Alle Produkte des Herstellers STMICROELECTRONICS (170456) > Seite 2804 nach 2841
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L4931CD50-TR | STMicroelectronics |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SO8; SMD; L4931 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.4V Output voltage: 5V Output current: 0.3A Case: SO8 Mounting: SMD Manufacturer series: L4931 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 4...20V |
auf Bestellung 456 Stücke: Lieferzeit 14-21 Tag (e) |
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L4931ABD50-TR | STMicroelectronics |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SO8; SMD; L4931 Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.4V Output voltage: 5V Output current: 1A Case: SO8 Mounting: SMD Manufacturer series: L4931 Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 3.5...20V |
auf Bestellung 4122 Stücke: Lieferzeit 14-21 Tag (e) |
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STP43N60DM2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 21A; Idm: 136A Type of transistor: N-MOSFET Technology: MDmesh™ DM2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 21A Pulsed drain current: 136A Power dissipation: 250W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 93mΩ Mounting: THT Gate charge: 56nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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B-LCDAD-HDMI1 | STMicroelectronics |
![]() Description: Dev.kit: adapter; expansion board; Comp: ADV7533 Type of development kit: adapter Kit contents: expansion board Interface: DSI; HDMI; MIPI Kind of connector: HDMI socket; MIPI DSI Number of add-on connectors: 2 Components: ADV7533 Application: for devices with displays |
Produkt ist nicht verfügbar |
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STW32NM50N | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 500V; 13.86A; Idm: 88A; 190W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 13.86A Pulsed drain current: 88A Power dissipation: 190W Case: TO247 Gate-source voltage: ±25V On-state resistance: 0.1Ω Mounting: THT Gate charge: 62.5nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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BAT30CWFILM | STMicroelectronics |
![]() Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.3A; reel,tape Type of diode: Schottky switching Case: SOT323 Mounting: SMD Max. off-state voltage: 30V Load current: 0.3A Semiconductor structure: common cathode; double Max. forward voltage: 0.53V Max. forward impulse current: 1A Kind of package: reel; tape |
auf Bestellung 2876 Stücke: Lieferzeit 14-21 Tag (e) |
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STM32F303VCT6TR | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; -40÷85°C Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 72MHz Mounting: SMD Number of inputs/outputs: 87 Case: LQFP100 Supply voltage: 2...3.6V DC Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB Kind of architecture: Cortex M4 Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog Memory: 40kB SRAM; 256kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 4 Number of comparators: 7 Number of 12bit D/A converters: 2 Family: STM32F3 |
Produkt ist nicht verfügbar |
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STM32F303VCT7TR | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; Cmp: 7 Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 72MHz Mounting: SMD Number of inputs/outputs: 87 Case: LQFP100 Supply voltage: 2...3.6V DC Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB Kind of architecture: Cortex M4 Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog Memory: 40kB SRAM; 256kB FLASH Operating temperature: -40...105°C Number of 12bit A/D converters: 4 Number of comparators: 7 Number of 12bit D/A converters: 2 Family: STM32F3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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STP10N95K5 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 950V; 5A; 130W; ESD Type of transistor: N-MOSFET Technology: SuperMESH5™ Polarisation: unipolar Drain-source voltage: 950V Drain current: 5A Power dissipation: 130W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.8Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
Produkt ist nicht verfügbar |
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STGP10NB60S | STMicroelectronics |
![]() Description: Transistor: IGBT; 600V; 16A; 80W; TO220AB Type of transistor: IGBT Power dissipation: 80W Case: TO220AB Mounting: THT Kind of package: tube Pulsed collector current: 80A Gate charge: 33nC Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 16A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
STGP10NB60SD | STMicroelectronics |
![]() Description: Transistor: IGBT; 600V; 16A; 80W; TO220AB Type of transistor: IGBT Power dissipation: 80W Case: TO220AB Mounting: THT Kind of package: tube Pulsed collector current: 80A Gate charge: 33nC Collector-emitter voltage: 600V Gate-emitter voltage: ±20V Collector current: 16A |
Produkt ist nicht verfügbar |
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SMAJ48CA-TR | STMicroelectronics |
![]() Description: Diode: TVS; 400W; 56.1V; 23A; bidirectional; SMA; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.4kW Max. off-state voltage: 48V Breakdown voltage: 56.1V Max. forward impulse current: 23A Semiconductor structure: bidirectional Case: SMA Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
auf Bestellung 1332 Stücke: Lieferzeit 14-21 Tag (e) |
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TS922AIDT | STMicroelectronics |
![]() Description: IC: operational amplifier; 4MHz; Ch: 2; SO8; 2.7÷12VDC; reel,tape Operating temperature: -40...125°C Type of integrated circuit: operational amplifier Number of channels: 2 Bandwidth: 4MHz Input offset voltage: 0.9mV Integrated circuit features: rail-to-rail; universal Kind of package: reel; tape Slew rate: 1V/μs Input offset current: 30nA Input bias current: 0.1µA Voltage supply range: 2.7...12V DC Mounting: SMT Case: SO8 |
auf Bestellung 1763 Stücke: Lieferzeit 14-21 Tag (e) |
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TS9224IPT | STMicroelectronics |
![]() Description: IC: operational amplifier; 4MHz; Ch: 4; TSSOP14; 2.7÷12VDC; IB: 90nA Type of integrated circuit: operational amplifier Bandwidth: 4MHz Mounting: SMT Number of channels: 4 Case: TSSOP14 Slew rate: 1.3V/μs Operating temperature: -40...125°C Input offset voltage: 0.9mV Voltage supply range: 2.7...12V DC Integrated circuit features: precision; rail-to-rail Kind of package: reel; tape Input bias current: 90nA Input offset current: 30nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TS9224IYDT | STMicroelectronics |
![]() Description: IC: operational amplifier; 4MHz; Ch: 4; SO14; 2.7÷12VDC; IB: 90nA Type of integrated circuit: operational amplifier Bandwidth: 4MHz Mounting: SMT Number of channels: 4 Case: SO14 Slew rate: 1.3V/μs Operating temperature: -40...125°C Input offset voltage: 0.9mV Voltage supply range: 2.7...12V DC Input bias current: 90nA Input offset current: 30nA Application: automotive industry Quiescent current: 1.3mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TS9222IPT | STMicroelectronics |
![]() Description: IC: operational amplifier; 4MHz; Ch: 2; TSSOP8; 2.7÷12VDC; IB: 90nA Type of integrated circuit: operational amplifier Bandwidth: 4MHz Mounting: SMT Number of channels: 2 Case: TSSOP8 Slew rate: 1.3V/μs Operating temperature: -40...125°C Input offset voltage: 0.9mV Voltage supply range: 2.7...12V DC Integrated circuit features: precision; rail-to-rail Kind of package: reel; tape Input bias current: 90nA Input offset current: 30nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TS9222IYDT | STMicroelectronics |
![]() Description: IC: operational amplifier; 4MHz; Ch: 2; SO8; 2.7÷12VDC; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 4MHz Mounting: SMT Number of channels: 2 Case: SO8 Slew rate: 1.3V/μs Operating temperature: -40...125°C Input offset voltage: 0.9mV Voltage supply range: 2.7...12V DC Integrated circuit features: precision; rail-to-rail Kind of package: reel; tape Input bias current: 90nA Input offset current: 30nA Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TS9222IYPT | STMicroelectronics |
![]() Description: IC: operational amplifier; 4MHz; Ch: 2; TSSOP8; 2.7÷12VDC; IB: 90nA Type of integrated circuit: operational amplifier Bandwidth: 4MHz Mounting: SMT Number of channels: 2 Case: TSSOP8 Slew rate: 1.3V/μs Operating temperature: -40...125°C Input offset voltage: 0.9mV Voltage supply range: 2.7...12V DC Integrated circuit features: precision; rail-to-rail Kind of package: reel; tape Input bias current: 90nA Input offset current: 30nA Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TS9224IDT | STMicroelectronics |
![]() Description: IC: operational amplifier; 4MHz; Ch: 4; SO14; 2.7÷12VDC; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 4MHz Mounting: SMT Number of channels: 4 Case: SO14 Slew rate: 1.3V/μs Operating temperature: -40...125°C Input offset voltage: 0.9mV Voltage supply range: 2.7...12V DC Integrated circuit features: precision; rail-to-rail Kind of package: reel; tape Input bias current: 90nA Input offset current: 30nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TS9224IYPT | STMicroelectronics |
![]() Description: IC: operational amplifier; 4MHz; Ch: 4; TSSOP14; 2.7÷12VDC; IB: 90nA Type of integrated circuit: operational amplifier Bandwidth: 4MHz Mounting: SMT Number of channels: 4 Case: TSSOP14 Slew rate: 1.3V/μs Operating temperature: -40...125°C Input offset voltage: 0.9mV Voltage supply range: 2.7...12V DC Integrated circuit features: precision; rail-to-rail Kind of package: reel; tape Input bias current: 90nA Input offset current: 30nA Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TS922AIYDT | STMicroelectronics |
![]() Description: IC: operational amplifier; 4MHz; Ch: 2; SO8; 2.7÷12VDC; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 4MHz Mounting: SMT Number of channels: 2 Case: SO8 Slew rate: 1.3V/μs Operating temperature: -40...125°C Input offset voltage: 0.9mV Voltage supply range: 2.7...12V DC Integrated circuit features: rail-to-rail; universal Kind of package: reel; tape Input bias current: 0.1µA Input offset current: 30nA Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TS922AIYPT | STMicroelectronics |
![]() Description: IC: operational amplifier; 4MHz; Ch: 2; TSSOP8; 2.7÷12VDC; IB: 0.1uA Type of integrated circuit: operational amplifier Bandwidth: 4MHz Mounting: SMT Number of channels: 2 Case: TSSOP8 Slew rate: 1.3V/μs Operating temperature: -40...125°C Input offset voltage: 0.9mV Voltage supply range: 2.7...12V DC Integrated circuit features: rail-to-rail; universal Kind of package: reel; tape Input bias current: 0.1µA Input offset current: 30nA Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
TS922EIJT | STMicroelectronics |
![]() Description: IC: operational amplifier; 4MHz; Ch: 2; flip chip8; 2.7÷12VDC Type of integrated circuit: operational amplifier Bandwidth: 4MHz Mounting: SMT Number of channels: 2 Case: flip chip8 Slew rate: 1.3V/μs Operating temperature: -40...125°C Input offset voltage: 1.5mV Voltage supply range: 2.7...12V DC Integrated circuit features: rail-to-rail; universal Kind of package: reel; tape Input bias current: 0.1µA Input offset current: 30nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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TS9222IDT | STMicroelectronics |
![]() Description: IC: operational amplifier; 4MHz; Ch: 2; SO8; 2.7÷12VDC; reel,tape Type of integrated circuit: operational amplifier Bandwidth: 4MHz Mounting: SMT Number of channels: 2 Case: SO8 Slew rate: 1.3V/μs Operating temperature: -40...125°C Input offset voltage: 0.9mV Voltage supply range: 2.7...12V DC Integrated circuit features: precision; rail-to-rail Kind of package: reel; tape Input bias current: 90nA Input offset current: 30nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
MJD31CT4-A | STMicroelectronics |
![]() Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 100V Collector current: 3A Power dissipation: 15W Case: DPAK Current gain: 10...50 Mounting: SMD Kind of package: reel; tape Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
LF90CPT-TR | STMicroelectronics |
![]() Description: IC: voltage regulator; LDO,linear,fixed; 9V; 0.5A; PPAK; SMD; LFXX Type of integrated circuit: voltage regulator Kind of voltage regulator: fixed; LDO; linear Voltage drop: 0.45V Output voltage: 9V Output current: 0.5A Case: PPAK Mounting: SMD Kind of package: reel; tape Operating temperature: -40...125°C Tolerance: ±2% Number of channels: 1 Input voltage: 2.5...16V Manufacturer series: LFXX |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
STP4CMPQTR | STMicroelectronics |
![]() Description: IC: driver; LED driver; QFN20; 2.5÷30mA; Ch: 4; 2.7÷5.5VDC; 30MHz Type of integrated circuit: driver Kind of package: reel; tape Case: QFN20 Mounting: SMD Operating temperature: -40...85°C Output current: 2.5...30mA Number of channels: 4 Input voltage: 2.7...5.5V DC Kind of integrated circuit: LED driver Frequency: 30MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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SM15T150CA | STMicroelectronics |
![]() Description: Diode: TVS; 1.5kW; 150V; 7.2A; bidirectional; SMC; reel,tape Type of diode: TVS Peak pulse power dissipation: 1.5kW Max. off-state voltage: 128V Breakdown voltage: 150V Max. forward impulse current: 7.2A Semiconductor structure: bidirectional Case: SMC Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
auf Bestellung 1179 Stücke: Lieferzeit 14-21 Tag (e) |
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STM32G483CET3 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 170MHz; LQFP48; 1.71÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 170MHz Mounting: SMD Number of inputs/outputs: 38 Case: LQFP48 Supply voltage: 1.71...3.6V DC Interface: CAN-FD x3; I2C x4; LPUART; QUAD SPI; SAI; SPI x3; USART x3; USB Kind of architecture: Cortex M4 Integrated circuit features: AES; Brown Out Reset (BOR); CRC; DMA; DSP; FPU; hardware encryption; PdR; PoR; PVD; PWM; RTC; TRNG; watchdog Memory: 128kB SRAM; 512kB FLASH Operating temperature: -40...125°C Number of 12bit A/D converters: 20 Number of 12bit D/A converters: 7 Number of 16bit timers: 11 Number of 32bit timers: 2 Family: STM32G4 Kind of package: in-tray |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
STM32F415RGT6TR | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 168MHz; LQFP64; 1.8÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 168MHz Mounting: SMD Number of inputs/outputs: 51 Case: LQFP64 Supply voltage: 1.8...3.6V DC Interface: CAN x2; full duplex; I2C x3; SDIO; SPI x3; UART x2; USART x4; USB OTG Kind of architecture: Cortex M4 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog Memory: 192kB SRAM; 1MB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 16 Number of 12bit D/A converters: 2 Number of 16bit timers: 14 Family: STM32F4 Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
STM32F215RGT6 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 120MHz; LQFP64; 1.8÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 120MHz Mounting: SMD Number of inputs/outputs: 51 Case: LQFP64 Supply voltage: 1.8...3.6V DC Interface: CAN; I2C x3; I2S x2; SDIO; SPI x3; UART x2; USART x4; USB Kind of architecture: Cortex M3 Memory: 128kB SRAM; 1MB FLASH Operating temperature: -40...85°C Family: STM32F2 |
Produkt ist nicht verfügbar |
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STM32F215RGT6TR | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 120MHz; LQFP64; 1.8÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 120MHz Mounting: SMD Number of inputs/outputs: 51 Case: LQFP64 Supply voltage: 1.8...3.6V DC Interface: CAN; I2C x3; I2S x2; SDIO; SPI x3; UART x2; USART x4; USB Kind of architecture: Cortex M3 Memory: 128kB SRAM; 1MB FLASH Operating temperature: -40...85°C Family: STM32F2 |
Produkt ist nicht verfügbar |
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STM32F215ZGT6 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 120MHz; LQFP144; 1.8÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 120MHz Mounting: SMD Number of inputs/outputs: 114 Case: LQFP144 Supply voltage: 1.8...3.6V DC Interface: CAN x2; I2C x3; I2S x2; SDIO; SPI x3; UART x2; USART x4; USB Kind of architecture: Cortex M3 Memory: 128kB SRAM; 1MB FLASH Operating temperature: -40...85°C Family: STM32F2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
STM6821SWY6F | STMicroelectronics |
![]() Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull Operating temperature: -40...85°C Case: SOT23-5 Supply voltage: 1.2...5.5V DC Type of integrated circuit: supervisor circuit Active logical level: high Kind of RESET output: push-pull Integrated circuit features: manual reset; watchdog Threshold on-voltage: 2.93V Kind of integrated circuit: power on reset monitor (PoR) Mounting: SMD |
Produkt ist nicht verfügbar |
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STP200N3LL | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 480A; 176.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 120A Power dissipation: 176.5W Case: TO220-3 Gate-source voltage: ±20V On-state resistance: 2.4mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 53nC Pulsed drain current: 480A |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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1.5KE24CA | STMicroelectronics |
![]() Description: Diode: TVS; 24V; 45A; bidirectional; DO201; 1.5kW; Ammo Pack Type of diode: TVS Max. off-state voltage: 20.5V Breakdown voltage: 24V Max. forward impulse current: 45A Semiconductor structure: bidirectional Case: DO201 Mounting: THT Leakage current: 1µA Peak pulse power dissipation: 1.5kW Kind of package: Ammo Pack |
auf Bestellung 546 Stücke: Lieferzeit 14-21 Tag (e) |
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STM32H503KBU6 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 250MHz; UFQFPN32; 1.71÷3.6VDC Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 250MHz Mounting: SMD Number of inputs/outputs: 24 Case: UFQFPN32 Supply voltage: 1.71...3.6V DC Interface: CAN FD; I2C x2; I3C; LPUART; SPI x3; USART x3; USB Kind of architecture: Cortex M33 Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; MPU; PdR; PoR; PVD; PWM; RTC; TRNG; watchdog Memory: 32kB SRAM; 128kB FLASH Operating temperature: -40...85°C Number of 12bit A/D converters: 10 Number of 12bit D/A converters: 2 Number of 16bit timers: 6 Number of 32bit timers: 1 Family: STM32H5 Kind of package: in-tray |
Produkt ist nicht verfügbar |
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STPSC1206D | STMicroelectronics |
![]() Description: Diode: Schottky rectifying; SiC; THT; 600V; 12A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 0.6kV Load current: 12A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 2.1V Max. forward impulse current: 200A Kind of package: tube Max. load current: 50A Heatsink thickness: 1.23...1.32mm |
auf Bestellung 16 Stücke: Lieferzeit 14-21 Tag (e) |
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STW75NF20 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; STripFET™; unipolar; 200V; 47A; 190W; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 47A Case: TO247 On-state resistance: 28mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Power dissipation: 190W Technology: STripFET™ Gate-source voltage: ±20V |
auf Bestellung 26 Stücke: Lieferzeit 14-21 Tag (e) |
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STB75NF20 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 200V; 75A; 190W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 75A Case: D2PAK On-state resistance: 34mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Power dissipation: 190W Technology: STripFET™ II Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
STW75NF30AG | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 300V; 60A; TO247 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 300V Drain current: 60A Case: TO247 On-state resistance: 45mΩ Mounting: THT Gate charge: 180nC Kind of package: tube Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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TSV792IDT | STMicroelectronics |
![]() Description: IC: operational amplifier; 50MHz; Ch: 2; SO8; 2.2÷5.5VDC; IB: 75pA Number of channels: 2 Type of integrated circuit: operational amplifier Bandwidth: 50MHz Quiescent current: 6mA Input offset voltage: 0.7mV Slew rate: 30V/μs Input offset current: 20pA Input bias current: 75pA Voltage supply range: 2.2...5.5V DC Mounting: SMT Operating temperature: -40...125°C Case: SO8 |
auf Bestellung 65 Stücke: Lieferzeit 14-21 Tag (e) |
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BAS70KFILM | STMicroelectronics |
![]() Description: Diode: Schottky switching; SOD523; SMD; 70V; 70mA; reel,tape Type of diode: Schottky switching Case: SOD523 Mounting: SMD Max. off-state voltage: 70V Load current: 70mA Semiconductor structure: single diode Max. forward voltage: 1V Kind of package: reel; tape Max. forward impulse current: 1A |
auf Bestellung 12483 Stücke: Lieferzeit 14-21 Tag (e) |
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TN5015H-6I | STMicroelectronics |
![]() Description: Thyristor; 600V; Ifmax: 50A; 30A; Igt: 15mA; TO220ABIns; THT; tube Max. off-state voltage: 0.6kV Max. load current: 50A Load current: 30A Gate current: 15mA Max. forward impulse current: 0.45kA Kind of package: tube Features of semiconductor devices: high temperature Type of thyristor: thyristor Mounting: THT Case: TO220ABIns |
auf Bestellung 63 Stücke: Lieferzeit 14-21 Tag (e) |
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SMBJ22A-TR | STMicroelectronics |
![]() Description: Diode: TVS; 600W; 25.7V; 17.7A; unidirectional; SMB; reel,tape Type of diode: TVS Peak pulse power dissipation: 0.6kW Max. off-state voltage: 22V Breakdown voltage: 25.7V Max. forward impulse current: 17.7A Semiconductor structure: unidirectional Case: SMB Mounting: SMD Leakage current: 1µA Kind of package: reel; tape |
auf Bestellung 1851 Stücke: Lieferzeit 14-21 Tag (e) |
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STWA70N60DM2 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 42A; Idm: 264A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 42A Power dissipation: 446W Case: TO247 Gate-source voltage: ±25V On-state resistance: 37mΩ Mounting: THT Gate charge: 121nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 264A Technology: MDmesh™ DM2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
STWA70N60DM6 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 600V; 39A; Idm: 220A Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 39A Power dissipation: 390W Case: TO247 Gate-source voltage: ±25V On-state resistance: 42mΩ Mounting: THT Gate charge: 99nC Kind of package: tube Kind of channel: enhancement Pulsed drain current: 220A Technology: MDmesh™ DM6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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STP8NK80Z | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 140W; TO220-3; ESD Technology: SuperMesh™ Drain-source voltage: 800V Drain current: 3.9A On-state resistance: 1.5Ω Type of transistor: N-MOSFET Power dissipation: 140W Polarisation: unipolar Kind of package: tube Version: ESD Kind of channel: enhancement Gate-source voltage: ±30V Mounting: THT Case: TO220-3 |
auf Bestellung 444 Stücke: Lieferzeit 14-21 Tag (e) |
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STP8NK80ZFP | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 30W; TO220FP; ESD Type of transistor: N-MOSFET Technology: SuperMesh™ Polarisation: unipolar Drain-source voltage: 800V Drain current: 3.9A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 1.5Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Version: ESD |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
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STPS30SM120SFP | STMicroelectronics |
![]() Description: Diode: Schottky rectifying; THT; 120V; 30A; TO220FP; Ufmax: 0.95V Type of diode: Schottky rectifying Mounting: THT Max. off-state voltage: 120V Load current: 30A Semiconductor structure: single diode Case: TO220FP Max. forward voltage: 0.95V Max. load current: 50A Max. forward impulse current: 0.24kA Leakage current: 50mA Kind of package: tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
STM32F302C8T7 | STMicroelectronics |
![]() Description: IC: STM32 ARM microcontroller; 72MHz; LQFP48; 2÷3.6VDC; -40÷105°C Type of integrated circuit: STM32 ARM microcontroller Clock frequency: 72MHz Mounting: SMD Number of inputs/outputs: 37 Case: LQFP48 Supply voltage: 2...3.6V DC Interface: CAN; GPIO; I2C; I2S; SPI; USART; USB Kind of architecture: Cortex M4 Integrated circuit features: DMA; operational amplifier; PdR; PoR; PVD; watchdog Memory: 16kB SRAM; 64kB FLASH Operating temperature: -40...105°C Number of 12bit A/D converters: 1 Number of comparators: 3 Number of 12bit D/A converters: 1 Family: STM32F3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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STD5NM60-1 | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 650V; 3.1A; Idm: 20A; 96W; IPAK Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 650V Drain current: 3.1A Power dissipation: 96W Case: IPAK Gate-source voltage: ±30V On-state resistance: 1Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 20A Gate charge: 18nC |
auf Bestellung 130 Stücke: Lieferzeit 14-21 Tag (e) |
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STW34NM60N | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 20A; 250W; TO247 Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 250W Case: TO247 Gate-source voltage: ±25V On-state resistance: 92mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 326 Stücke: Lieferzeit 14-21 Tag (e) |
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STF24NM60N | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 11A; 30W; TO220FP Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Power dissipation: 30W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 315 Stücke: Lieferzeit 14-21 Tag (e) |
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STP24NM60N | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 650V; 11A; Idm: 68A Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 650V Drain current: 11A Power dissipation: 125W Case: TO220-3 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 68A Gate charge: 44nC |
auf Bestellung 185 Stücke: Lieferzeit 14-21 Tag (e) |
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STF34NM60ND | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 18A; Idm: 116A Type of transistor: N-MOSFET Technology: FDmesh™ II Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Power dissipation: 40W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.11Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 116A |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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STP34NM60N | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 20A; 250W Type of transistor: N-MOSFET Technology: MDmesh™ || Polarisation: unipolar Drain-source voltage: 600V Drain current: 20A Power dissipation: 250W Case: TO220-3 Gate-source voltage: ±25V On-state resistance: 0.105Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 73 Stücke: Lieferzeit 14-21 Tag (e) |
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STW34NM60ND | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 18A; 190W; TO247 Type of transistor: N-MOSFET Technology: FDmesh™ II Polarisation: unipolar Drain-source voltage: 600V Drain current: 18A Power dissipation: 190W Case: TO247 Gate-source voltage: ±25V On-state resistance: 97mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 16 Stücke: Lieferzeit 14-21 Tag (e) |
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STL3NM60N | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 2.2A; Idm: 2.6A; 22W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 2.2A Power dissipation: 22W Case: PowerFLAT 3.3x3.3 Gate-source voltage: ±25V On-state resistance: 1.8Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 2.6A Gate charge: 9.5nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
STD9NM60N | STMicroelectronics |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 6.5A; Idm: 26A; 70W; DPAK Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 6.5A Power dissipation: 70W Case: DPAK Gate-source voltage: ±25V On-state resistance: 745mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 26A Gate charge: 17.4nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
L4931CD50-TR |
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Hersteller: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SO8; SMD; L4931
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 5V
Output current: 0.3A
Case: SO8
Mounting: SMD
Manufacturer series: L4931
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4...20V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 0.3A; SO8; SMD; L4931
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 5V
Output current: 0.3A
Case: SO8
Mounting: SMD
Manufacturer series: L4931
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 4...20V
auf Bestellung 456 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
87+ | 0.83 EUR |
92+ | 0.78 EUR |
97+ | 0.74 EUR |
134+ | 0.53 EUR |
142+ | 0.51 EUR |
L4931ABD50-TR |
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Hersteller: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SO8; SMD; L4931
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 5V
Output current: 1A
Case: SO8
Mounting: SMD
Manufacturer series: L4931
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.5...20V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 5V; 1A; SO8; SMD; L4931
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.4V
Output voltage: 5V
Output current: 1A
Case: SO8
Mounting: SMD
Manufacturer series: L4931
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 3.5...20V
auf Bestellung 4122 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
55+ | 1.3 EUR |
77+ | 0.94 EUR |
84+ | 0.86 EUR |
114+ | 0.63 EUR |
120+ | 0.6 EUR |
2500+ | 0.57 EUR |
STP43N60DM2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 21A; Idm: 136A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Pulsed drain current: 136A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 93mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 21A; Idm: 136A
Type of transistor: N-MOSFET
Technology: MDmesh™ DM2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Pulsed drain current: 136A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 93mΩ
Mounting: THT
Gate charge: 56nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
B-LCDAD-HDMI1 |
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Hersteller: STMicroelectronics
Category: STM development kits
Description: Dev.kit: adapter; expansion board; Comp: ADV7533
Type of development kit: adapter
Kit contents: expansion board
Interface: DSI; HDMI; MIPI
Kind of connector: HDMI socket; MIPI DSI
Number of add-on connectors: 2
Components: ADV7533
Application: for devices with displays
Category: STM development kits
Description: Dev.kit: adapter; expansion board; Comp: ADV7533
Type of development kit: adapter
Kit contents: expansion board
Interface: DSI; HDMI; MIPI
Kind of connector: HDMI socket; MIPI DSI
Number of add-on connectors: 2
Components: ADV7533
Application: for devices with displays
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STW32NM50N |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13.86A; Idm: 88A; 190W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13.86A
Pulsed drain current: 88A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 62.5nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 500V; 13.86A; Idm: 88A; 190W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13.86A
Pulsed drain current: 88A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 62.5nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BAT30CWFILM |
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Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.3A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.53V
Max. forward impulse current: 1A
Kind of package: reel; tape
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 30V; 0.3A; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.3A
Semiconductor structure: common cathode; double
Max. forward voltage: 0.53V
Max. forward impulse current: 1A
Kind of package: reel; tape
auf Bestellung 2876 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
179+ | 0.4 EUR |
212+ | 0.34 EUR |
253+ | 0.28 EUR |
305+ | 0.24 EUR |
579+ | 0.12 EUR |
633+ | 0.11 EUR |
1397+ | 0.051 EUR |
1480+ | 0.048 EUR |
STM32F303VCT6TR |
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Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 87
Case: LQFP100
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 40kB SRAM; 256kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 4
Number of comparators: 7
Number of 12bit D/A converters: 2
Family: STM32F3
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; -40÷85°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 87
Case: LQFP100
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 40kB SRAM; 256kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 4
Number of comparators: 7
Number of 12bit D/A converters: 2
Family: STM32F3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STM32F303VCT7TR |
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Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; Cmp: 7
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 87
Case: LQFP100
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 40kB SRAM; 256kB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 4
Number of comparators: 7
Number of 12bit D/A converters: 2
Family: STM32F3
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP100; 2÷3.6VDC; Cmp: 7
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 87
Case: LQFP100
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SPI; UART; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: CRC; DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 40kB SRAM; 256kB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 4
Number of comparators: 7
Number of 12bit D/A converters: 2
Family: STM32F3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP10N95K5 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 950V; 5A; 130W; ESD
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 5A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SuperMESH5™; unipolar; 950V; 5A; 130W; ESD
Type of transistor: N-MOSFET
Technology: SuperMESH5™
Polarisation: unipolar
Drain-source voltage: 950V
Drain current: 5A
Power dissipation: 130W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STGP10NB60S |
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Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 16A; 80W; TO220AB
Type of transistor: IGBT
Power dissipation: 80W
Case: TO220AB
Mounting: THT
Kind of package: tube
Pulsed collector current: 80A
Gate charge: 33nC
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 16A
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 16A; 80W; TO220AB
Type of transistor: IGBT
Power dissipation: 80W
Case: TO220AB
Mounting: THT
Kind of package: tube
Pulsed collector current: 80A
Gate charge: 33nC
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 16A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STGP10NB60SD |
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Hersteller: STMicroelectronics
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 16A; 80W; TO220AB
Type of transistor: IGBT
Power dissipation: 80W
Case: TO220AB
Mounting: THT
Kind of package: tube
Pulsed collector current: 80A
Gate charge: 33nC
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 16A
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 16A; 80W; TO220AB
Type of transistor: IGBT
Power dissipation: 80W
Case: TO220AB
Mounting: THT
Kind of package: tube
Pulsed collector current: 80A
Gate charge: 33nC
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Collector current: 16A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
SMAJ48CA-TR |
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Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 56.1V; 23A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 56.1V
Max. forward impulse current: 23A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 400W; 56.1V; 23A; bidirectional; SMA; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.4kW
Max. off-state voltage: 48V
Breakdown voltage: 56.1V
Max. forward impulse current: 23A
Semiconductor structure: bidirectional
Case: SMA
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
auf Bestellung 1332 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
136+ | 0.53 EUR |
204+ | 0.35 EUR |
285+ | 0.25 EUR |
298+ | 0.24 EUR |
650+ | 0.11 EUR |
685+ | 0.1 EUR |
TS922AIDT |
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Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 2; SO8; 2.7÷12VDC; reel,tape
Operating temperature: -40...125°C
Type of integrated circuit: operational amplifier
Number of channels: 2
Bandwidth: 4MHz
Input offset voltage: 0.9mV
Integrated circuit features: rail-to-rail; universal
Kind of package: reel; tape
Slew rate: 1V/μs
Input offset current: 30nA
Input bias current: 0.1µA
Voltage supply range: 2.7...12V DC
Mounting: SMT
Case: SO8
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 2; SO8; 2.7÷12VDC; reel,tape
Operating temperature: -40...125°C
Type of integrated circuit: operational amplifier
Number of channels: 2
Bandwidth: 4MHz
Input offset voltage: 0.9mV
Integrated circuit features: rail-to-rail; universal
Kind of package: reel; tape
Slew rate: 1V/μs
Input offset current: 30nA
Input bias current: 0.1µA
Voltage supply range: 2.7...12V DC
Mounting: SMT
Case: SO8
auf Bestellung 1763 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
41+ | 1.77 EUR |
61+ | 1.19 EUR |
117+ | 0.61 EUR |
125+ | 0.57 EUR |
TS9224IPT |
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Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 4; TSSOP14; 2.7÷12VDC; IB: 90nA
Type of integrated circuit: operational amplifier
Bandwidth: 4MHz
Mounting: SMT
Number of channels: 4
Case: TSSOP14
Slew rate: 1.3V/μs
Operating temperature: -40...125°C
Input offset voltage: 0.9mV
Voltage supply range: 2.7...12V DC
Integrated circuit features: precision; rail-to-rail
Kind of package: reel; tape
Input bias current: 90nA
Input offset current: 30nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 4; TSSOP14; 2.7÷12VDC; IB: 90nA
Type of integrated circuit: operational amplifier
Bandwidth: 4MHz
Mounting: SMT
Number of channels: 4
Case: TSSOP14
Slew rate: 1.3V/μs
Operating temperature: -40...125°C
Input offset voltage: 0.9mV
Voltage supply range: 2.7...12V DC
Integrated circuit features: precision; rail-to-rail
Kind of package: reel; tape
Input bias current: 90nA
Input offset current: 30nA
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TS9224IYDT |
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Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 4; SO14; 2.7÷12VDC; IB: 90nA
Type of integrated circuit: operational amplifier
Bandwidth: 4MHz
Mounting: SMT
Number of channels: 4
Case: SO14
Slew rate: 1.3V/μs
Operating temperature: -40...125°C
Input offset voltage: 0.9mV
Voltage supply range: 2.7...12V DC
Input bias current: 90nA
Input offset current: 30nA
Application: automotive industry
Quiescent current: 1.3mA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 4; SO14; 2.7÷12VDC; IB: 90nA
Type of integrated circuit: operational amplifier
Bandwidth: 4MHz
Mounting: SMT
Number of channels: 4
Case: SO14
Slew rate: 1.3V/μs
Operating temperature: -40...125°C
Input offset voltage: 0.9mV
Voltage supply range: 2.7...12V DC
Input bias current: 90nA
Input offset current: 30nA
Application: automotive industry
Quiescent current: 1.3mA
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TS9222IPT |
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Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 2; TSSOP8; 2.7÷12VDC; IB: 90nA
Type of integrated circuit: operational amplifier
Bandwidth: 4MHz
Mounting: SMT
Number of channels: 2
Case: TSSOP8
Slew rate: 1.3V/μs
Operating temperature: -40...125°C
Input offset voltage: 0.9mV
Voltage supply range: 2.7...12V DC
Integrated circuit features: precision; rail-to-rail
Kind of package: reel; tape
Input bias current: 90nA
Input offset current: 30nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 2; TSSOP8; 2.7÷12VDC; IB: 90nA
Type of integrated circuit: operational amplifier
Bandwidth: 4MHz
Mounting: SMT
Number of channels: 2
Case: TSSOP8
Slew rate: 1.3V/μs
Operating temperature: -40...125°C
Input offset voltage: 0.9mV
Voltage supply range: 2.7...12V DC
Integrated circuit features: precision; rail-to-rail
Kind of package: reel; tape
Input bias current: 90nA
Input offset current: 30nA
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TS9222IYDT |
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Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 2; SO8; 2.7÷12VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 4MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 1.3V/μs
Operating temperature: -40...125°C
Input offset voltage: 0.9mV
Voltage supply range: 2.7...12V DC
Integrated circuit features: precision; rail-to-rail
Kind of package: reel; tape
Input bias current: 90nA
Input offset current: 30nA
Application: automotive industry
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 2; SO8; 2.7÷12VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 4MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 1.3V/μs
Operating temperature: -40...125°C
Input offset voltage: 0.9mV
Voltage supply range: 2.7...12V DC
Integrated circuit features: precision; rail-to-rail
Kind of package: reel; tape
Input bias current: 90nA
Input offset current: 30nA
Application: automotive industry
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TS9222IYPT |
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Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 2; TSSOP8; 2.7÷12VDC; IB: 90nA
Type of integrated circuit: operational amplifier
Bandwidth: 4MHz
Mounting: SMT
Number of channels: 2
Case: TSSOP8
Slew rate: 1.3V/μs
Operating temperature: -40...125°C
Input offset voltage: 0.9mV
Voltage supply range: 2.7...12V DC
Integrated circuit features: precision; rail-to-rail
Kind of package: reel; tape
Input bias current: 90nA
Input offset current: 30nA
Application: automotive industry
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 2; TSSOP8; 2.7÷12VDC; IB: 90nA
Type of integrated circuit: operational amplifier
Bandwidth: 4MHz
Mounting: SMT
Number of channels: 2
Case: TSSOP8
Slew rate: 1.3V/μs
Operating temperature: -40...125°C
Input offset voltage: 0.9mV
Voltage supply range: 2.7...12V DC
Integrated circuit features: precision; rail-to-rail
Kind of package: reel; tape
Input bias current: 90nA
Input offset current: 30nA
Application: automotive industry
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TS9224IDT |
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Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 4; SO14; 2.7÷12VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 4MHz
Mounting: SMT
Number of channels: 4
Case: SO14
Slew rate: 1.3V/μs
Operating temperature: -40...125°C
Input offset voltage: 0.9mV
Voltage supply range: 2.7...12V DC
Integrated circuit features: precision; rail-to-rail
Kind of package: reel; tape
Input bias current: 90nA
Input offset current: 30nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 4; SO14; 2.7÷12VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 4MHz
Mounting: SMT
Number of channels: 4
Case: SO14
Slew rate: 1.3V/μs
Operating temperature: -40...125°C
Input offset voltage: 0.9mV
Voltage supply range: 2.7...12V DC
Integrated circuit features: precision; rail-to-rail
Kind of package: reel; tape
Input bias current: 90nA
Input offset current: 30nA
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TS9224IYPT |
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Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 4; TSSOP14; 2.7÷12VDC; IB: 90nA
Type of integrated circuit: operational amplifier
Bandwidth: 4MHz
Mounting: SMT
Number of channels: 4
Case: TSSOP14
Slew rate: 1.3V/μs
Operating temperature: -40...125°C
Input offset voltage: 0.9mV
Voltage supply range: 2.7...12V DC
Integrated circuit features: precision; rail-to-rail
Kind of package: reel; tape
Input bias current: 90nA
Input offset current: 30nA
Application: automotive industry
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 4; TSSOP14; 2.7÷12VDC; IB: 90nA
Type of integrated circuit: operational amplifier
Bandwidth: 4MHz
Mounting: SMT
Number of channels: 4
Case: TSSOP14
Slew rate: 1.3V/μs
Operating temperature: -40...125°C
Input offset voltage: 0.9mV
Voltage supply range: 2.7...12V DC
Integrated circuit features: precision; rail-to-rail
Kind of package: reel; tape
Input bias current: 90nA
Input offset current: 30nA
Application: automotive industry
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TS922AIYDT |
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Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 2; SO8; 2.7÷12VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 4MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 1.3V/μs
Operating temperature: -40...125°C
Input offset voltage: 0.9mV
Voltage supply range: 2.7...12V DC
Integrated circuit features: rail-to-rail; universal
Kind of package: reel; tape
Input bias current: 0.1µA
Input offset current: 30nA
Application: automotive industry
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 2; SO8; 2.7÷12VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 4MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 1.3V/μs
Operating temperature: -40...125°C
Input offset voltage: 0.9mV
Voltage supply range: 2.7...12V DC
Integrated circuit features: rail-to-rail; universal
Kind of package: reel; tape
Input bias current: 0.1µA
Input offset current: 30nA
Application: automotive industry
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TS922AIYPT |
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Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 2; TSSOP8; 2.7÷12VDC; IB: 0.1uA
Type of integrated circuit: operational amplifier
Bandwidth: 4MHz
Mounting: SMT
Number of channels: 2
Case: TSSOP8
Slew rate: 1.3V/μs
Operating temperature: -40...125°C
Input offset voltage: 0.9mV
Voltage supply range: 2.7...12V DC
Integrated circuit features: rail-to-rail; universal
Kind of package: reel; tape
Input bias current: 0.1µA
Input offset current: 30nA
Application: automotive industry
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 2; TSSOP8; 2.7÷12VDC; IB: 0.1uA
Type of integrated circuit: operational amplifier
Bandwidth: 4MHz
Mounting: SMT
Number of channels: 2
Case: TSSOP8
Slew rate: 1.3V/μs
Operating temperature: -40...125°C
Input offset voltage: 0.9mV
Voltage supply range: 2.7...12V DC
Integrated circuit features: rail-to-rail; universal
Kind of package: reel; tape
Input bias current: 0.1µA
Input offset current: 30nA
Application: automotive industry
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TS922EIJT |
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Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 2; flip chip8; 2.7÷12VDC
Type of integrated circuit: operational amplifier
Bandwidth: 4MHz
Mounting: SMT
Number of channels: 2
Case: flip chip8
Slew rate: 1.3V/μs
Operating temperature: -40...125°C
Input offset voltage: 1.5mV
Voltage supply range: 2.7...12V DC
Integrated circuit features: rail-to-rail; universal
Kind of package: reel; tape
Input bias current: 0.1µA
Input offset current: 30nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 2; flip chip8; 2.7÷12VDC
Type of integrated circuit: operational amplifier
Bandwidth: 4MHz
Mounting: SMT
Number of channels: 2
Case: flip chip8
Slew rate: 1.3V/μs
Operating temperature: -40...125°C
Input offset voltage: 1.5mV
Voltage supply range: 2.7...12V DC
Integrated circuit features: rail-to-rail; universal
Kind of package: reel; tape
Input bias current: 0.1µA
Input offset current: 30nA
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TS9222IDT |
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Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 2; SO8; 2.7÷12VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 4MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 1.3V/μs
Operating temperature: -40...125°C
Input offset voltage: 0.9mV
Voltage supply range: 2.7...12V DC
Integrated circuit features: precision; rail-to-rail
Kind of package: reel; tape
Input bias current: 90nA
Input offset current: 30nA
Category: SMD operational amplifiers
Description: IC: operational amplifier; 4MHz; Ch: 2; SO8; 2.7÷12VDC; reel,tape
Type of integrated circuit: operational amplifier
Bandwidth: 4MHz
Mounting: SMT
Number of channels: 2
Case: SO8
Slew rate: 1.3V/μs
Operating temperature: -40...125°C
Input offset voltage: 0.9mV
Voltage supply range: 2.7...12V DC
Integrated circuit features: precision; rail-to-rail
Kind of package: reel; tape
Input bias current: 90nA
Input offset current: 30nA
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MJD31CT4-A |
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Hersteller: STMicroelectronics
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 100V; 3A; 15W; DPAK; automotive industry
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 100V
Collector current: 3A
Power dissipation: 15W
Case: DPAK
Current gain: 10...50
Mounting: SMD
Kind of package: reel; tape
Application: automotive industry
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LF90CPT-TR |
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Hersteller: STMicroelectronics
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 9V; 0.5A; PPAK; SMD; LFXX
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.45V
Output voltage: 9V
Output current: 0.5A
Case: PPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...16V
Manufacturer series: LFXX
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; LDO,linear,fixed; 9V; 0.5A; PPAK; SMD; LFXX
Type of integrated circuit: voltage regulator
Kind of voltage regulator: fixed; LDO; linear
Voltage drop: 0.45V
Output voltage: 9V
Output current: 0.5A
Case: PPAK
Mounting: SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Tolerance: ±2%
Number of channels: 1
Input voltage: 2.5...16V
Manufacturer series: LFXX
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STP4CMPQTR |
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Hersteller: STMicroelectronics
Category: LED drivers
Description: IC: driver; LED driver; QFN20; 2.5÷30mA; Ch: 4; 2.7÷5.5VDC; 30MHz
Type of integrated circuit: driver
Kind of package: reel; tape
Case: QFN20
Mounting: SMD
Operating temperature: -40...85°C
Output current: 2.5...30mA
Number of channels: 4
Input voltage: 2.7...5.5V DC
Kind of integrated circuit: LED driver
Frequency: 30MHz
Category: LED drivers
Description: IC: driver; LED driver; QFN20; 2.5÷30mA; Ch: 4; 2.7÷5.5VDC; 30MHz
Type of integrated circuit: driver
Kind of package: reel; tape
Case: QFN20
Mounting: SMD
Operating temperature: -40...85°C
Output current: 2.5...30mA
Number of channels: 4
Input voltage: 2.7...5.5V DC
Kind of integrated circuit: LED driver
Frequency: 30MHz
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SM15T150CA |
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Hersteller: STMicroelectronics
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 150V; 7.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 128V
Breakdown voltage: 150V
Max. forward impulse current: 7.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; 1.5kW; 150V; 7.2A; bidirectional; SMC; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 1.5kW
Max. off-state voltage: 128V
Breakdown voltage: 150V
Max. forward impulse current: 7.2A
Semiconductor structure: bidirectional
Case: SMC
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
auf Bestellung 1179 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
55+ | 1.32 EUR |
68+ | 1.06 EUR |
175+ | 0.41 EUR |
185+ | 0.39 EUR |
STM32G483CET3 |
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Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 170MHz; LQFP48; 1.71÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 170MHz
Mounting: SMD
Number of inputs/outputs: 38
Case: LQFP48
Supply voltage: 1.71...3.6V DC
Interface: CAN-FD x3; I2C x4; LPUART; QUAD SPI; SAI; SPI x3; USART x3; USB
Kind of architecture: Cortex M4
Integrated circuit features: AES; Brown Out Reset (BOR); CRC; DMA; DSP; FPU; hardware encryption; PdR; PoR; PVD; PWM; RTC; TRNG; watchdog
Memory: 128kB SRAM; 512kB FLASH
Operating temperature: -40...125°C
Number of 12bit A/D converters: 20
Number of 12bit D/A converters: 7
Number of 16bit timers: 11
Number of 32bit timers: 2
Family: STM32G4
Kind of package: in-tray
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 170MHz; LQFP48; 1.71÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 170MHz
Mounting: SMD
Number of inputs/outputs: 38
Case: LQFP48
Supply voltage: 1.71...3.6V DC
Interface: CAN-FD x3; I2C x4; LPUART; QUAD SPI; SAI; SPI x3; USART x3; USB
Kind of architecture: Cortex M4
Integrated circuit features: AES; Brown Out Reset (BOR); CRC; DMA; DSP; FPU; hardware encryption; PdR; PoR; PVD; PWM; RTC; TRNG; watchdog
Memory: 128kB SRAM; 512kB FLASH
Operating temperature: -40...125°C
Number of 12bit A/D converters: 20
Number of 12bit D/A converters: 7
Number of 16bit timers: 11
Number of 32bit timers: 2
Family: STM32G4
Kind of package: in-tray
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STM32F415RGT6TR |
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Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 168MHz; LQFP64; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 168MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 1.8...3.6V DC
Interface: CAN x2; full duplex; I2C x3; SDIO; SPI x3; UART x2; USART x4; USB OTG
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 192kB SRAM; 1MB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 16
Number of 12bit D/A converters: 2
Number of 16bit timers: 14
Family: STM32F4
Kind of package: reel; tape
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 168MHz; LQFP64; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 168MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 1.8...3.6V DC
Interface: CAN x2; full duplex; I2C x3; SDIO; SPI x3; UART x2; USART x4; USB OTG
Kind of architecture: Cortex M4
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; PdR; PoR; PVD; PWM; RTC; watchdog
Memory: 192kB SRAM; 1MB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 16
Number of 12bit D/A converters: 2
Number of 16bit timers: 14
Family: STM32F4
Kind of package: reel; tape
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STM32F215RGT6 |
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Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 120MHz; LQFP64; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 120MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 1.8...3.6V DC
Interface: CAN; I2C x3; I2S x2; SDIO; SPI x3; UART x2; USART x4; USB
Kind of architecture: Cortex M3
Memory: 128kB SRAM; 1MB FLASH
Operating temperature: -40...85°C
Family: STM32F2
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 120MHz; LQFP64; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 120MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 1.8...3.6V DC
Interface: CAN; I2C x3; I2S x2; SDIO; SPI x3; UART x2; USART x4; USB
Kind of architecture: Cortex M3
Memory: 128kB SRAM; 1MB FLASH
Operating temperature: -40...85°C
Family: STM32F2
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STM32F215RGT6TR |
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Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 120MHz; LQFP64; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 120MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 1.8...3.6V DC
Interface: CAN; I2C x3; I2S x2; SDIO; SPI x3; UART x2; USART x4; USB
Kind of architecture: Cortex M3
Memory: 128kB SRAM; 1MB FLASH
Operating temperature: -40...85°C
Family: STM32F2
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 120MHz; LQFP64; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 120MHz
Mounting: SMD
Number of inputs/outputs: 51
Case: LQFP64
Supply voltage: 1.8...3.6V DC
Interface: CAN; I2C x3; I2S x2; SDIO; SPI x3; UART x2; USART x4; USB
Kind of architecture: Cortex M3
Memory: 128kB SRAM; 1MB FLASH
Operating temperature: -40...85°C
Family: STM32F2
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STM32F215ZGT6 |
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Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 120MHz; LQFP144; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 120MHz
Mounting: SMD
Number of inputs/outputs: 114
Case: LQFP144
Supply voltage: 1.8...3.6V DC
Interface: CAN x2; I2C x3; I2S x2; SDIO; SPI x3; UART x2; USART x4; USB
Kind of architecture: Cortex M3
Memory: 128kB SRAM; 1MB FLASH
Operating temperature: -40...85°C
Family: STM32F2
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 120MHz; LQFP144; 1.8÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 120MHz
Mounting: SMD
Number of inputs/outputs: 114
Case: LQFP144
Supply voltage: 1.8...3.6V DC
Interface: CAN x2; I2C x3; I2S x2; SDIO; SPI x3; UART x2; USART x4; USB
Kind of architecture: Cortex M3
Memory: 128kB SRAM; 1MB FLASH
Operating temperature: -40...85°C
Family: STM32F2
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STM6821SWY6F |
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Hersteller: STMicroelectronics
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Operating temperature: -40...85°C
Case: SOT23-5
Supply voltage: 1.2...5.5V DC
Type of integrated circuit: supervisor circuit
Active logical level: high
Kind of RESET output: push-pull
Integrated circuit features: manual reset; watchdog
Threshold on-voltage: 2.93V
Kind of integrated circuit: power on reset monitor (PoR)
Mounting: SMD
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; power on reset monitor (PoR); push-pull
Operating temperature: -40...85°C
Case: SOT23-5
Supply voltage: 1.2...5.5V DC
Type of integrated circuit: supervisor circuit
Active logical level: high
Kind of RESET output: push-pull
Integrated circuit features: manual reset; watchdog
Threshold on-voltage: 2.93V
Kind of integrated circuit: power on reset monitor (PoR)
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP200N3LL |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 480A; 176.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Power dissipation: 176.5W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 53nC
Pulsed drain current: 480A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 120A; Idm: 480A; 176.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 120A
Power dissipation: 176.5W
Case: TO220-3
Gate-source voltage: ±20V
On-state resistance: 2.4mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 53nC
Pulsed drain current: 480A
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
20+ | 3.58 EUR |
1.5KE24CA |
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Hersteller: STMicroelectronics
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 24V; 45A; bidirectional; DO201; 1.5kW; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 45A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: Ammo Pack
Category: Bidirectional TVS THT diodes
Description: Diode: TVS; 24V; 45A; bidirectional; DO201; 1.5kW; Ammo Pack
Type of diode: TVS
Max. off-state voltage: 20.5V
Breakdown voltage: 24V
Max. forward impulse current: 45A
Semiconductor structure: bidirectional
Case: DO201
Mounting: THT
Leakage current: 1µA
Peak pulse power dissipation: 1.5kW
Kind of package: Ammo Pack
auf Bestellung 546 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
77+ | 0.93 EUR |
112+ | 0.64 EUR |
228+ | 0.31 EUR |
241+ | 0.3 EUR |
STM32H503KBU6 |
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Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 250MHz; UFQFPN32; 1.71÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 250MHz
Mounting: SMD
Number of inputs/outputs: 24
Case: UFQFPN32
Supply voltage: 1.71...3.6V DC
Interface: CAN FD; I2C x2; I3C; LPUART; SPI x3; USART x3; USB
Kind of architecture: Cortex M33
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; MPU; PdR; PoR; PVD; PWM; RTC; TRNG; watchdog
Memory: 32kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 10
Number of 12bit D/A converters: 2
Number of 16bit timers: 6
Number of 32bit timers: 1
Family: STM32H5
Kind of package: in-tray
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 250MHz; UFQFPN32; 1.71÷3.6VDC
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 250MHz
Mounting: SMD
Number of inputs/outputs: 24
Case: UFQFPN32
Supply voltage: 1.71...3.6V DC
Interface: CAN FD; I2C x2; I3C; LPUART; SPI x3; USART x3; USB
Kind of architecture: Cortex M33
Integrated circuit features: Brown Out Reset (BOR); CRC; DMA; DSP; FPU; MPU; PdR; PoR; PVD; PWM; RTC; TRNG; watchdog
Memory: 32kB SRAM; 128kB FLASH
Operating temperature: -40...85°C
Number of 12bit A/D converters: 10
Number of 12bit D/A converters: 2
Number of 16bit timers: 6
Number of 32bit timers: 1
Family: STM32H5
Kind of package: in-tray
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STPSC1206D |
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Hersteller: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 12A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 12A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 2.1V
Max. forward impulse current: 200A
Kind of package: tube
Max. load current: 50A
Heatsink thickness: 1.23...1.32mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 12A; TO220AC; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 12A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 2.1V
Max. forward impulse current: 200A
Kind of package: tube
Max. load current: 50A
Heatsink thickness: 1.23...1.32mm
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
10+ | 7.85 EUR |
11+ | 7.06 EUR |
13+ | 5.53 EUR |
14+ | 5.23 EUR |
STW75NF20 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 200V; 47A; 190W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 47A
Case: TO247
On-state resistance: 28mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 190W
Technology: STripFET™
Gate-source voltage: ±20V
Category: THT N channel transistors
Description: Transistor: N-MOSFET; STripFET™; unipolar; 200V; 47A; 190W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 47A
Case: TO247
On-state resistance: 28mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 190W
Technology: STripFET™
Gate-source voltage: ±20V
auf Bestellung 26 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
13+ | 5.52 EUR |
17+ | 4.29 EUR |
18+ | 4.09 EUR |
STB75NF20 |
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Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 200V; 75A; 190W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 75A
Case: D2PAK
On-state resistance: 34mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 190W
Technology: STripFET™ II
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; STripFET™ II; unipolar; 200V; 75A; 190W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 75A
Case: D2PAK
On-state resistance: 34mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 190W
Technology: STripFET™ II
Gate-source voltage: ±20V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STW75NF30AG |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 60A; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 60A
Case: TO247
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Application: automotive industry
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 300V; 60A; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 300V
Drain current: 60A
Case: TO247
On-state resistance: 45mΩ
Mounting: THT
Gate charge: 180nC
Kind of package: tube
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
TSV792IDT |
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Hersteller: STMicroelectronics
Category: SMD operational amplifiers
Description: IC: operational amplifier; 50MHz; Ch: 2; SO8; 2.2÷5.5VDC; IB: 75pA
Number of channels: 2
Type of integrated circuit: operational amplifier
Bandwidth: 50MHz
Quiescent current: 6mA
Input offset voltage: 0.7mV
Slew rate: 30V/μs
Input offset current: 20pA
Input bias current: 75pA
Voltage supply range: 2.2...5.5V DC
Mounting: SMT
Operating temperature: -40...125°C
Case: SO8
Category: SMD operational amplifiers
Description: IC: operational amplifier; 50MHz; Ch: 2; SO8; 2.2÷5.5VDC; IB: 75pA
Number of channels: 2
Type of integrated circuit: operational amplifier
Bandwidth: 50MHz
Quiescent current: 6mA
Input offset voltage: 0.7mV
Slew rate: 30V/μs
Input offset current: 20pA
Input bias current: 75pA
Voltage supply range: 2.2...5.5V DC
Mounting: SMT
Operating temperature: -40...125°C
Case: SO8
auf Bestellung 65 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
31+ | 2.32 EUR |
46+ | 1.56 EUR |
51+ | 1.42 EUR |
54+ | 1.34 EUR |
BAS70KFILM |
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Hersteller: STMicroelectronics
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 70V; 70mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Kind of package: reel; tape
Max. forward impulse current: 1A
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOD523; SMD; 70V; 70mA; reel,tape
Type of diode: Schottky switching
Case: SOD523
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Kind of package: reel; tape
Max. forward impulse current: 1A
auf Bestellung 12483 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
334+ | 0.21 EUR |
550+ | 0.13 EUR |
852+ | 0.084 EUR |
1029+ | 0.069 EUR |
1471+ | 0.049 EUR |
1558+ | 0.046 EUR |
TN5015H-6I |
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Hersteller: STMicroelectronics
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 50A; 30A; Igt: 15mA; TO220ABIns; THT; tube
Max. off-state voltage: 0.6kV
Max. load current: 50A
Load current: 30A
Gate current: 15mA
Max. forward impulse current: 0.45kA
Kind of package: tube
Features of semiconductor devices: high temperature
Type of thyristor: thyristor
Mounting: THT
Case: TO220ABIns
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 50A; 30A; Igt: 15mA; TO220ABIns; THT; tube
Max. off-state voltage: 0.6kV
Max. load current: 50A
Load current: 30A
Gate current: 15mA
Max. forward impulse current: 0.45kA
Kind of package: tube
Features of semiconductor devices: high temperature
Type of thyristor: thyristor
Mounting: THT
Case: TO220ABIns
auf Bestellung 63 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
23+ | 3.23 EUR |
41+ | 1.77 EUR |
49+ | 1.47 EUR |
52+ | 1.4 EUR |
SMBJ22A-TR |
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Hersteller: STMicroelectronics
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 25.7V; 17.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 25.7V
Max. forward impulse current: 17.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 600W; 25.7V; 17.7A; unidirectional; SMB; reel,tape
Type of diode: TVS
Peak pulse power dissipation: 0.6kW
Max. off-state voltage: 22V
Breakdown voltage: 25.7V
Max. forward impulse current: 17.7A
Semiconductor structure: unidirectional
Case: SMB
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
auf Bestellung 1851 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
148+ | 0.49 EUR |
178+ | 0.4 EUR |
200+ | 0.36 EUR |
258+ | 0.28 EUR |
596+ | 0.12 EUR |
625+ | 0.11 EUR |
STWA70N60DM2 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 42A; Idm: 264A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 42A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 264A
Technology: MDmesh™ DM2
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM2; unipolar; 600V; 42A; Idm: 264A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 42A
Power dissipation: 446W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 37mΩ
Mounting: THT
Gate charge: 121nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 264A
Technology: MDmesh™ DM2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STWA70N60DM6 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 600V; 39A; Idm: 220A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Power dissipation: 390W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 99nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 220A
Technology: MDmesh™ DM6
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ DM6; unipolar; 600V; 39A; Idm: 220A
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Power dissipation: 390W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 42mΩ
Mounting: THT
Gate charge: 99nC
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 220A
Technology: MDmesh™ DM6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STP8NK80Z |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 140W; TO220-3; ESD
Technology: SuperMesh™
Drain-source voltage: 800V
Drain current: 3.9A
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Power dissipation: 140W
Polarisation: unipolar
Kind of package: tube
Version: ESD
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: THT
Case: TO220-3
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 140W; TO220-3; ESD
Technology: SuperMesh™
Drain-source voltage: 800V
Drain current: 3.9A
On-state resistance: 1.5Ω
Type of transistor: N-MOSFET
Power dissipation: 140W
Polarisation: unipolar
Kind of package: tube
Version: ESD
Kind of channel: enhancement
Gate-source voltage: ±30V
Mounting: THT
Case: TO220-3
auf Bestellung 444 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
40+ | 1.83 EUR |
44+ | 1.64 EUR |
49+ | 1.47 EUR |
57+ | 1.26 EUR |
61+ | 1.19 EUR |
STP8NK80ZFP |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 30W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 3.9A; 30W; TO220FP; ESD
Type of transistor: N-MOSFET
Technology: SuperMesh™
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 3.9A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 1.5Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Version: ESD
auf Bestellung 300 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
15+ | 4.82 EUR |
20+ | 3.59 EUR |
54+ | 1.33 EUR |
57+ | 1.26 EUR |
STPS30SM120SFP |
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Hersteller: STMicroelectronics
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 120V; 30A; TO220FP; Ufmax: 0.95V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 120V
Load current: 30A
Semiconductor structure: single diode
Case: TO220FP
Max. forward voltage: 0.95V
Max. load current: 50A
Max. forward impulse current: 0.24kA
Leakage current: 50mA
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; THT; 120V; 30A; TO220FP; Ufmax: 0.95V
Type of diode: Schottky rectifying
Mounting: THT
Max. off-state voltage: 120V
Load current: 30A
Semiconductor structure: single diode
Case: TO220FP
Max. forward voltage: 0.95V
Max. load current: 50A
Max. forward impulse current: 0.24kA
Leakage current: 50mA
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STM32F302C8T7 |
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Hersteller: STMicroelectronics
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP48; 2÷3.6VDC; -40÷105°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 37
Case: LQFP48
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SPI; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 16kB SRAM; 64kB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 1
Number of comparators: 3
Number of 12bit D/A converters: 1
Family: STM32F3
Category: ST microcontrollers
Description: IC: STM32 ARM microcontroller; 72MHz; LQFP48; 2÷3.6VDC; -40÷105°C
Type of integrated circuit: STM32 ARM microcontroller
Clock frequency: 72MHz
Mounting: SMD
Number of inputs/outputs: 37
Case: LQFP48
Supply voltage: 2...3.6V DC
Interface: CAN; GPIO; I2C; I2S; SPI; USART; USB
Kind of architecture: Cortex M4
Integrated circuit features: DMA; operational amplifier; PdR; PoR; PVD; watchdog
Memory: 16kB SRAM; 64kB FLASH
Operating temperature: -40...105°C
Number of 12bit A/D converters: 1
Number of comparators: 3
Number of 12bit D/A converters: 1
Family: STM32F3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STD5NM60-1 |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.1A; Idm: 20A; 96W; IPAK
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.1A
Power dissipation: 96W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 20A
Gate charge: 18nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 3.1A; Idm: 20A; 96W; IPAK
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.1A
Power dissipation: 96W
Case: IPAK
Gate-source voltage: ±30V
On-state resistance: 1Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 20A
Gate charge: 18nC
auf Bestellung 130 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
35+ | 2.07 EUR |
57+ | 1.26 EUR |
73+ | 0.99 EUR |
77+ | 0.93 EUR |
STW34NM60N |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 20A; 250W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 92mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 20A; 250W; TO247
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 92mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 326 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
6+ | 12.37 EUR |
16+ | 4.59 EUR |
17+ | 4.35 EUR |
STF24NM60N |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 11A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 11A; 30W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 30W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 315 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
18+ | 4.05 EUR |
34+ | 2.14 EUR |
36+ | 2.03 EUR |
STP24NM60N |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 650V; 11A; Idm: 68A
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 68A
Gate charge: 44nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 650V; 11A; Idm: 68A
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 125W
Case: TO220-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 68A
Gate charge: 44nC
auf Bestellung 185 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
19+ | 3.8 EUR |
38+ | 1.93 EUR |
40+ | 1.83 EUR |
STF34NM60ND |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 18A; Idm: 116A
Type of transistor: N-MOSFET
Technology: FDmesh™ II
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 116A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 18A; Idm: 116A
Type of transistor: N-MOSFET
Technology: FDmesh™ II
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 40W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.11Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 116A
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
11+ | 6.95 EUR |
12+ | 6.26 EUR |
15+ | 5.05 EUR |
16+ | 4.76 EUR |
STP34NM60N |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 20A; 250W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.105Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ ||; unipolar; 600V; 20A; 250W
Type of transistor: N-MOSFET
Technology: MDmesh™ ||
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 250W
Case: TO220-3
Gate-source voltage: ±25V
On-state resistance: 0.105Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 73 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
7+ | 11.45 EUR |
17+ | 4.33 EUR |
18+ | 4.1 EUR |
STW34NM60ND |
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Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 18A; 190W; TO247
Type of transistor: N-MOSFET
Technology: FDmesh™ II
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 97mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; FDmesh™ II; unipolar; 600V; 18A; 190W; TO247
Type of transistor: N-MOSFET
Technology: FDmesh™ II
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 18A
Power dissipation: 190W
Case: TO247
Gate-source voltage: ±25V
On-state resistance: 97mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
12+ | 6.36 EUR |
15+ | 4.8 EUR |
16+ | 4.55 EUR |
STL3NM60N |
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Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.2A; Idm: 2.6A; 22W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.2A
Power dissipation: 22W
Case: PowerFLAT 3.3x3.3
Gate-source voltage: ±25V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 2.6A
Gate charge: 9.5nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 2.2A; Idm: 2.6A; 22W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.2A
Power dissipation: 22W
Case: PowerFLAT 3.3x3.3
Gate-source voltage: ±25V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 2.6A
Gate charge: 9.5nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
STD9NM60N |
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Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.5A; Idm: 26A; 70W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.5A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 745mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 26A
Gate charge: 17.4nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6.5A; Idm: 26A; 70W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6.5A
Power dissipation: 70W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 745mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 26A
Gate charge: 17.4nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH