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DF10G5M4N,LF DF10G5M4N,LF Toshiba Semiconductor and Storage DF10G5M4N_datasheet_en_20220328.pdf?did=30751&prodName=DF10G5M4N Description: TVS DIODE 3.6VWM 24VC 10DFN
Power Line Protection: No
Power - Peak Pulse: 30W
Voltage - Clamping (Max) @ Ipp: 24V
Voltage - Breakdown (Min): 4V
Bidirectional Channels: 4
Supplier Device Package: 10-DFN (2.5x1)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Capacitance @ Frequency: 0.2pF @ 1MHz
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: 10-UFDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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DF10G6M4N,LF DF10G6M4N,LF Toshiba Semiconductor and Storage DF10G6M4N_datasheet_en_20220818.pdf?did=30754&prodName=DF10G6M4N Description: TVS DIODE 5.5VWM 25VC 10DFN
Power Line Protection: No
Power - Peak Pulse: 30W
Voltage - Clamping (Max) @ Ipp: 25V
Voltage - Breakdown (Min): 5.6V
Bidirectional Channels: 4
Supplier Device Package: 10-DFN (2.5x1)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Capacitance @ Frequency: 0.2pF @ 1MHz
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: 10-UFDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TC7WH125FE,LJ(CT Toshiba Semiconductor and Storage Description: IC BUS BUFFER DUAL NONINV 8SSOP
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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SSM6J507NU,LF SSM6J507NU,LF Toshiba Semiconductor and Storage docget.jsp?did=30372&prodName=SSM6J507NU Description: MOSFET P-CH 30V 10A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 6-UDFNB (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 15 V
auf Bestellung 36000 Stücke:
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3000+0.35 EUR
9000+0.3 EUR
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SSM6J507NU,LF SSM6J507NU,LF Toshiba Semiconductor and Storage docget.jsp?did=30372&prodName=SSM6J507NU Description: MOSFET P-CH 30V 10A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 6-UDFNB (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 15 V
auf Bestellung 36497 Stücke:
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15+1.46 EUR
24+0.9 EUR
50+0.67 EUR
100+0.58 EUR
500+0.45 EUR
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TPH2R608NH,L1Q TPH2R608NH,L1Q Toshiba Semiconductor and Storage docget.jsp?did=15733&prodName=TPH2R608NH Description: MOSFET N-CH 75V 150A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 37.5 V
Produkt ist nicht verfügbar
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TPH2900ENH,L1Q TPH2900ENH,L1Q Toshiba Semiconductor and Storage docget.jsp?did=14485&prodName=TPH2900ENH Description: MOSFET N-CH 200V 33A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 16.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 100 V
auf Bestellung 4838 Stücke:
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4+6.47 EUR
10+4.21 EUR
100+2.93 EUR
500+2.38 EUR
1000+2.34 EUR
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TK8P60W5,RVQ TK8P60W5,RVQ Toshiba Semiconductor and Storage docget.jsp?did=14496&prodName=TK8P60W5 Description: MOSFET N-CH 600V 8A DPAK
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4.5V @ 400µA
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
auf Bestellung 2855 Stücke:
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10+2.21 EUR
100+1.8 EUR
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TK9P65W,RQ TK9P65W,RQ Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TK9P65W Description: MOSFET N-CH 650V 9.3A DPAK
auf Bestellung 4000 Stücke:
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TK14G65W,RQ TK14G65W,RQ Toshiba Semiconductor and Storage docget.jsp?did=14506&prodName=TK14G65W Description: MOSFET N-CH 650V 13.7A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 690µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
auf Bestellung 1214 Stücke:
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10+4.65 EUR
100+3.25 EUR
500+2.68 EUR
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TK14G65W5,RQ TK14G65W5,RQ Toshiba Semiconductor and Storage docget.jsp?did=14505&prodName=TK14G65W5 Description: MOSFET N-CH 650V 13.7A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4.5V @ 690µA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TK20V60W5,LVQ TK20V60W5,LVQ Toshiba Semiconductor and Storage docget.jsp?did=28825&prodName=TK20V60W5 Description: MOSFET N-CH 600V 20A 4DFN
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 4-DFN-EP (8x8)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-VSFN Exposed Pad
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
auf Bestellung 2292 Stücke:
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100+3.8 EUR
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TK6P65W,RQ TK6P65W,RQ Toshiba Semiconductor and Storage docget.jsp?did=15571&prodName=TK6P65W Description: MOSFET N-CH 650V 5.8A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 1951 Stücke:
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10+2.21 EUR
50+1.67 EUR
100+1.49 EUR
500+1.18 EUR
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TK7P65W,RQ TK7P65W,RQ Toshiba Semiconductor and Storage Description: MOSFET N-CH 650V 6.8A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 1408 Stücke:
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10+2.44 EUR
100+1.94 EUR
500+1.64 EUR
1000+1.39 EUR
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TK9P65W,RQ TK9P65W,RQ Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TK9P65W Description: MOSFET N-CH 650V 9.3A DPAK
auf Bestellung 4000 Stücke:
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TPH2R608NH,L1Q TPH2R608NH,L1Q Toshiba Semiconductor and Storage docget.jsp?did=15733&prodName=TPH2R608NH Description: MOSFET N-CH 75V 150A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 37.5 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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TPH2900ENH,L1Q TPH2900ENH,L1Q Toshiba Semiconductor and Storage docget.jsp?did=14485&prodName=TPH2900ENH Description: MOSFET N-CH 200V 33A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 16.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 100 V
auf Bestellung 4500 Stücke:
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TK8P60W5,RVQ TK8P60W5,RVQ Toshiba Semiconductor and Storage docget.jsp?did=14496&prodName=TK8P60W5 Description: MOSFET N-CH 600V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 560mOhm @ 4A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 400µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V
auf Bestellung 2000 Stücke:
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2000+1.49 EUR
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TK9P65W,RQ TK9P65W,RQ Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TK9P65W Description: MOSFET N-CH 650V 9.3A DPAK
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TK14G65W,RQ TK14G65W,RQ Toshiba Semiconductor and Storage docget.jsp?did=14506&prodName=TK14G65W Description: MOSFET N-CH 650V 13.7A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 690µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
Produkt ist nicht verfügbar
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TK14G65W5,RQ TK14G65W5,RQ Toshiba Semiconductor and Storage docget.jsp?did=14505&prodName=TK14G65W5 Description: MOSFET N-CH 650V 13.7A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4.5V @ 690µA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1000 Stücke
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TK20V60W5,LVQ TK20V60W5,LVQ Toshiba Semiconductor and Storage docget.jsp?did=28825&prodName=TK20V60W5 Description: MOSFET N-CH 600V 20A 4DFN
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 4-DFN-EP (8x8)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-VSFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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TK6P65W,RQ TK6P65W,RQ Toshiba Semiconductor and Storage docget.jsp?did=15571&prodName=TK6P65W Description: MOSFET N-CH 650V 5.8A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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TK7P65W,RQ TK7P65W,RQ Toshiba Semiconductor and Storage Description: MOSFET N-CH 650V 6.8A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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TK25E60X,S1X TK25E60X,S1X Toshiba Semiconductor and Storage docget.jsp?did=15196&prodName=TK25E60X Description: MOSFET N-CH 600V 25A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.5A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
Produkt ist nicht verfügbar
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TK25N60X,S1F TK25N60X,S1F Toshiba Semiconductor and Storage docget.jsp?did=15197&prodName=TK25N60X Description: MOSFET N-CH 600V 25A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.5A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
auf Bestellung 26 Stücke:
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TK7A60W5,S5VX TK7A60W5,S5VX Toshiba Semiconductor and Storage TK7A60W5_datasheet_en_20140225.pdf?did=14493&prodName=TK7A60W5 Description: MOSFET N-CH 600V 7A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4.5V @ 350µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 46 Stücke:
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5+4.46 EUR
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TK8A60W5,S5VX TK8A60W5,S5VX Toshiba Semiconductor and Storage docget.jsp?did=14495&prodName=TK8A60W5 Description: MOSFET N-CH 600V 8A TO220SIS
Rds On (Max) @ Id, Vgs: 540mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4.5V @ 400µA
Power Dissipation (Max): 30W (Tc)
Produkt ist nicht verfügbar
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TK10A60W5,S5VX TK10A60W5,S5VX Toshiba Semiconductor and Storage docget.jsp?did=14291&prodName=TK10A60W5 Description: MOSFET N-CH 600V 9.7A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 300 V
auf Bestellung 17 Stücke:
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10+3.78 EUR
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TK20N60W5,S1VF TK20N60W5,S1VF Toshiba Semiconductor and Storage docget.jsp?did=14961&prodName=TK20N60W5 Description: MOSFET N-CH 600V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 175mOhm @ 10A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
auf Bestellung 23 Stücke:
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3+9.01 EUR
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TK25N60X5,S1F TK25N60X5,S1F Toshiba Semiconductor and Storage docget.jsp?did=15557&prodName=TK25N60X5 Description: MOSFET N-CH 600V 25A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
auf Bestellung 30 Stücke:
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30+6.16 EUR
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TK39N60W5,S1VF TK39N60W5,S1VF Toshiba Semiconductor and Storage docget.jsp?did=14536&prodName=TK39N60W5 Description: MOSFET N-CH 600V 38.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
Rds On (Max) @ Id, Vgs: 74mOhm @ 19.4A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V
auf Bestellung 74 Stücke:
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2+17.2 EUR
30+10.07 EUR
60+9.21 EUR
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TK5Q65W,S1Q TK5Q65W,S1Q Toshiba Semiconductor and Storage Description: MOSFET N-CH 650V 5.2A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: I-PAK
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 1.22Ohm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
auf Bestellung 75 Stücke:
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8+2.67 EUR
10+2.38 EUR
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TK6Q65W,S1Q TK6Q65W,S1Q Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TK6Q65W Description: MOSFET N-CH 650V 5.8A IPAK-OS
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TK17E65W,S1X TK17E65W,S1X Toshiba Semiconductor and Storage docget.jsp?did=14508&prodName=TK17E65W Description: MOSFET N-CH 650V 17.3A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 3.5V @ 900µA
Power Dissipation (Max): 165W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 8.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 23 Stücke:
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3+7.22 EUR
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TK8A65W,S5X TK8A65W,S5X Toshiba Semiconductor and Storage docget.jsp?did=15580&prodName=TK8A65W Description: MOSFET N-CH 650V 7.8A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 3.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 50 Stücke:
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7+3.19 EUR
50+1.7 EUR
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TK17N65W,S1F TK17N65W,S1F Toshiba Semiconductor and Storage docget.jsp?did=14509&prodName=TK17N65W Description: MOSFET N-CH 650V 17.3A TO247
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 3.5V @ 900µA
Power Dissipation (Max): 165W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 8.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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TK28N65W,S1F TK28N65W,S1F Toshiba Semiconductor and Storage docget.jsp?did=14530&prodName=TK28N65W Description: MOSFET N-CH 650V 27.6A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 13.8A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.6mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 210 Stücke:
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2+12.82 EUR
30+7.29 EUR
60+6.63 EUR
120+6.07 EUR
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TK14E65W5,S1X TK14E65W5,S1X Toshiba Semiconductor and Storage docget.jsp?did=14504&prodName=TK14E65W5 Description: MOSFET N-CH 650V 13.7A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 690µA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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TK35A65W5,S5X TK35A65W5,S5X Toshiba Semiconductor and Storage docget.jsp?did=14533&prodName=TK35A65W5 Description: MOSFET N-CH 650V 35A TO220SIS
auf Bestellung 76 Stücke:
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TK14N65W5,S1F TK14N65W5,S1F Toshiba Semiconductor and Storage docget.jsp?did=14526&prodName=TK14N65W5 Description: MOSFET N-CH 650V 13.7A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 690µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
auf Bestellung 30 Stücke:
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3+9.62 EUR
30+5.34 EUR
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TK25A60X,S5X TK25A60X,S5X Toshiba Semiconductor and Storage docget.jsp?did=15195&prodName=TK25A60X Description: MOSFET N-CH 600V 25A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 32 Stücke:
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3+8.13 EUR
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TK16E60W5,S1VX TK16E60W5,S1VX Toshiba Semiconductor and Storage docget.jsp?did=14274&prodName=TK16E60W5 Description: MOSFET N-CH 600V 15.8A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 7.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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TK25A60X5,S5X TK25A60X5,S5X Toshiba Semiconductor and Storage docget.jsp?did=15552&prodName=TK25A60X5 Description: MOSFET N-CH 600V 25A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 1 Stücke:
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TK8Q65W,S1Q TK8Q65W,S1Q Toshiba Semiconductor and Storage TK8Q65W_datasheet_en_20140930.pdf?did=15581&prodName=TK8Q65W Description: MOSFET N-CH 650V 7.8A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: I-PAK
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 670mOhm @ 3.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
auf Bestellung 5 Stücke:
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TK5A65W,S5X TK5A65W,S5X Toshiba Semiconductor and Storage docget.jsp?did=15564&prodName=TK5A65W Description: MOSFET N-CH 650V 5.2A TO-220SIS
auf Bestellung 98 Stücke:
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TK6A65W,S5X TK6A65W,S5X Toshiba Semiconductor and Storage docget.jsp?did=15568&prodName=TK6A65W Description: MOSFET N-CH 650V 5.8A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V
auf Bestellung 58 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.33 EUR
50+2.09 EUR
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TK7A65W,S5X TK7A65W,S5X Toshiba Semiconductor and Storage docget.jsp?did=15574&prodName=TK7A65W Description: MOSFET N-CH 650V 6.8A TO220SIS
Produkt ist nicht verfügbar
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TK9A65W,S5X TK9A65W,S5X Toshiba Semiconductor and Storage docget.jsp?did=15583&prodName=TK9A65W Description: MOSFET N-CH 650V 9.3A TO-220SIS
Produkt ist nicht verfügbar
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TK28A65W,S5X TK28A65W,S5X Toshiba Semiconductor and Storage docget.jsp?did=15562&prodName=TK28A65W Description: MOSFET N-CH 650V 27.6A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 3.5V @ 1.6mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 13.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 100 Stücke:
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TBD62003APG TBD62003APG Toshiba Semiconductor and Storage TBD62003AFG_datasheet_en_20150724.pdf?did=29886&prodName=TBD62003AFG Description: IC PWR SWITCH N-CHAN 1:1 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-DIP
Part Status: Active
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TBD62004APG TBD62004APG Toshiba Semiconductor and Storage TBD62003AFG_datasheet_en_20150724.pdf?did=29886&prodName=TBD62003AFG Description: IC PWR SWITCH N-CHAN 1:1 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-DIP
Part Status: Active
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TBD62083APG TBD62083APG Toshiba Semiconductor and Storage TBD62083AFG_datasheet_en_20160511.pdf?did=29893&prodName=TBD62083AFG Description: IC PWR SWITCH N-CHAN 1:1 18DIP
Packaging: Tube
Package / Case: 18-DIP (0.300", 7.62mm)
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-DIP
Part Status: Active
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TBD62084APG TBD62084APG Toshiba Semiconductor and Storage TBD62083AFG_datasheet_en_20160511.pdf?did=29893&prodName=TBD62083AFG Description: IC PWR SWITCH N-CHAN 1:1 18DIP
Packaging: Tube
Package / Case: 18-DIP (0.300", 7.62mm)
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-DIP
Part Status: Active
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TBD62783APG TBD62783APG Toshiba Semiconductor and Storage TBD62783AFG_datasheet_en_20160511.pdf?did=30523&prodName=TBD62783AFG Description: IC PWR SWITCH P-CHAN 1:1 18DIP
Packaging: Tube
Package / Case: 18-DIP (0.300", 7.62mm)
Output Type: P-Channel
Mounting Type: Through Hole
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-DIP
Part Status: Active
auf Bestellung 5741 Stücke:
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2520+2.84 EUR
5019+2.78 EUR
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TB6562ANG,8 TB6562ANG,8 Toshiba Semiconductor and Storage TB6562AFG_datasheet_en_20120928.pdf?did=2725&prodName=TB6562AFG Description: IC MTR DRV BIPOLAR 10-34V 24SDIP
Step Resolution: 1, 1/2, 1/4
Motor Type - AC, DC: Brushed DC
Motor Type - Stepper: Bipolar
Supplier Device Package: 24-SDIP
Voltage - Load: 10V ~ 34V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 10V ~ 34V
Output Configuration: Half Bridge (4)
Operating Temperature: -20°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 1.5A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Through Hole
Package / Case: 24-SDIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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TBD62003AFG,EL TBD62003AFG,EL Toshiba Semiconductor and Storage TBD62003AFG_datasheet_en_20150724.pdf?did=29886&prodName=TBD62003AFG Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
Part Status: Active
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TBD62003AFNG,EL TBD62003AFNG,EL Toshiba Semiconductor and Storage TBD62003AFG_datasheet_en_20150724.pdf?did=29886&prodName=TBD62003AFG Description: IC PWR SWITCH N-CHAN 1:1 16SSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SSOP
Part Status: Active
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TBD62003AFWG,EL TBD62003AFWG,EL Toshiba Semiconductor and Storage TBD62003AFG_datasheet_en_20150724.pdf?did=29886&prodName=TBD62003AFG Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
Part Status: Active
auf Bestellung 10000 Stücke:
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TBD62004AFG,EL TBD62004AFG,EL Toshiba Semiconductor and Storage TBD62003AFG_datasheet_en_20150724.pdf?did=29886&prodName=TBD62003AFG Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
Part Status: Active
auf Bestellung 6000 Stücke:
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2000+1.26 EUR
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DF10G5M4N,LF DF10G5M4N_datasheet_en_20220328.pdf?did=30751&prodName=DF10G5M4N
DF10G5M4N,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.6VWM 24VC 10DFN
Power Line Protection: No
Power - Peak Pulse: 30W
Voltage - Clamping (Max) @ Ipp: 24V
Voltage - Breakdown (Min): 4V
Bidirectional Channels: 4
Supplier Device Package: 10-DFN (2.5x1)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Capacitance @ Frequency: 0.2pF @ 1MHz
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: 10-UFDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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DF10G6M4N,LF DF10G6M4N_datasheet_en_20220818.pdf?did=30754&prodName=DF10G6M4N
DF10G6M4N,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 25VC 10DFN
Power Line Protection: No
Power - Peak Pulse: 30W
Voltage - Clamping (Max) @ Ipp: 25V
Voltage - Breakdown (Min): 5.6V
Bidirectional Channels: 4
Supplier Device Package: 10-DFN (2.5x1)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Capacitance @ Frequency: 0.2pF @ 1MHz
Applications: General Purpose
Type: Zener
Mounting Type: Surface Mount
Package / Case: 10-UFDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TC7WH125FE,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS BUFFER DUAL NONINV 8SSOP
Produkt ist nicht verfügbar
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SSM6J507NU,LF docget.jsp?did=30372&prodName=SSM6J507NU
SSM6J507NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 10A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 6-UDFNB (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 15 V
auf Bestellung 36000 Stücke:
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AnzahlPrivatkunde
3000+0.35 EUR
9000+0.3 EUR
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SSM6J507NU,LF docget.jsp?did=30372&prodName=SSM6J507NU
SSM6J507NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 10A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 6-UDFNB (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 15 V
auf Bestellung 36497 Stücke:
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15+1.46 EUR
24+0.9 EUR
50+0.67 EUR
100+0.58 EUR
500+0.45 EUR
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TPH2R608NH,L1Q docget.jsp?did=15733&prodName=TPH2R608NH
TPH2R608NH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 75V 150A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 37.5 V
Produkt ist nicht verfügbar
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TPH2900ENH,L1Q docget.jsp?did=14485&prodName=TPH2900ENH
TPH2900ENH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 200V 33A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 16.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 100 V
auf Bestellung 4838 Stücke:
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4+6.47 EUR
10+4.21 EUR
100+2.93 EUR
500+2.38 EUR
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TK8P60W5,RVQ docget.jsp?did=14496&prodName=TK8P60W5
TK8P60W5,RVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 8A DPAK
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4.5V @ 400µA
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 560mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
auf Bestellung 2855 Stücke:
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7+3 EUR
10+2.21 EUR
100+1.8 EUR
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TK9P65W,RQ docget.jsp?type=datasheet&lang=en&pid=TK9P65W
TK9P65W,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 9.3A DPAK
auf Bestellung 4000 Stücke:
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TK14G65W,RQ docget.jsp?did=14506&prodName=TK14G65W
TK14G65W,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 13.7A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 690µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
auf Bestellung 1214 Stücke:
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AnzahlPrivatkunde
3+7.1 EUR
10+4.65 EUR
100+3.25 EUR
500+2.68 EUR
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TK14G65W5,RQ docget.jsp?did=14505&prodName=TK14G65W5
TK14G65W5,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 13.7A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4.5V @ 690µA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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TK20V60W5,LVQ docget.jsp?did=28825&prodName=TK20V60W5
TK20V60W5,LVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 20A 4DFN
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 4-DFN-EP (8x8)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-VSFN Exposed Pad
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
auf Bestellung 2292 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.23 EUR
10+5.4 EUR
50+4.19 EUR
100+3.8 EUR
500+3.2 EUR
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TK6P65W,RQ docget.jsp?did=15571&prodName=TK6P65W
TK6P65W,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 5.8A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 1951 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.47 EUR
10+2.21 EUR
50+1.67 EUR
100+1.49 EUR
500+1.18 EUR
Mindestbestellmenge: 7 Stücke
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TK7P65W,RQ
TK7P65W,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 6.8A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 1408 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.93 EUR
10+2.44 EUR
100+1.94 EUR
500+1.64 EUR
1000+1.39 EUR
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TK9P65W,RQ docget.jsp?type=datasheet&lang=en&pid=TK9P65W
TK9P65W,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 9.3A DPAK
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
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TPH2R608NH,L1Q docget.jsp?did=15733&prodName=TPH2R608NH
TPH2R608NH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 75V 150A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 37.5 V
Produkt ist nicht verfügbar
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TPH2900ENH,L1Q docget.jsp?did=14485&prodName=TPH2900ENH
TPH2900ENH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 200V 33A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 16.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 100 V
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 4500 Stücke
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TK8P60W5,RVQ docget.jsp?did=14496&prodName=TK8P60W5
TK8P60W5,RVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 560mOhm @ 4A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 400µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+1.49 EUR
Mindestbestellmenge: 2000 Stücke
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TK9P65W,RQ docget.jsp?type=datasheet&lang=en&pid=TK9P65W
TK9P65W,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 9.3A DPAK
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Mindestbestellmenge: 2000 Stücke
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TK14G65W,RQ docget.jsp?did=14506&prodName=TK14G65W
TK14G65W,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 13.7A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 690µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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TK14G65W5,RQ docget.jsp?did=14505&prodName=TK14G65W5
TK14G65W5,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 13.7A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 4.5V @ 690µA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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TK20V60W5,LVQ docget.jsp?did=28825&prodName=TK20V60W5
TK20V60W5,LVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 20A 4DFN
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: 4-DFN-EP (8x8)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Power Dissipation (Max): 156W (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 4-VSFN Exposed Pad
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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TK6P65W,RQ docget.jsp?did=15571&prodName=TK6P65W
TK6P65W,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 5.8A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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TK7P65W,RQ
TK7P65W,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 6.8A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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TK25E60X,S1X docget.jsp?did=15196&prodName=TK25E60X
TK25E60X,S1X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 25A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.5A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TK25N60X,S1F docget.jsp?did=15197&prodName=TK25N60X
TK25N60X,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 25A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.5A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
auf Bestellung 26 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+10.52 EUR
Mindestbestellmenge: 2 Stücke
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TK7A60W5,S5VX TK7A60W5_datasheet_en_20140225.pdf?did=14493&prodName=TK7A60W5
TK7A60W5,S5VX
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 7A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4.5V @ 350µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 46 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.46 EUR
Mindestbestellmenge: 5 Stücke
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TK8A60W5,S5VX docget.jsp?did=14495&prodName=TK8A60W5
TK8A60W5,S5VX
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 8A TO220SIS
Rds On (Max) @ Id, Vgs: 540mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4.5V @ 400µA
Power Dissipation (Max): 30W (Tc)
Produkt ist nicht verfügbar
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TK10A60W5,S5VX docget.jsp?did=14291&prodName=TK10A60W5
TK10A60W5,S5VX
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 9.7A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 300 V
auf Bestellung 17 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.84 EUR
10+3.78 EUR
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TK20N60W5,S1VF docget.jsp?did=14961&prodName=TK20N60W5
TK20N60W5,S1VF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 175mOhm @ 10A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
auf Bestellung 23 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.01 EUR
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TK25N60X5,S1F docget.jsp?did=15557&prodName=TK25N60X5
TK25N60X5,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 25A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+10.94 EUR
30+6.16 EUR
Mindestbestellmenge: 2 Stücke
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TK39N60W5,S1VF docget.jsp?did=14536&prodName=TK39N60W5
TK39N60W5,S1VF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 38.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
Rds On (Max) @ Id, Vgs: 74mOhm @ 19.4A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V
auf Bestellung 74 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+17.2 EUR
30+10.07 EUR
60+9.21 EUR
Mindestbestellmenge: 2 Stücke
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TK5Q65W,S1Q
TK5Q65W,S1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 5.2A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: I-PAK
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Power Dissipation (Max): 60W (Tc)
Rds On (Max) @ Id, Vgs: 1.22Ohm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
auf Bestellung 75 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.67 EUR
10+2.38 EUR
Mindestbestellmenge: 8 Stücke
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TK6Q65W,S1Q docget.jsp?type=datasheet&lang=en&pid=TK6Q65W
TK6Q65W,S1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 5.8A IPAK-OS
auf Bestellung 375 Stücke:
Lieferzeit 10-14 Tag (e)
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TK17E65W,S1X docget.jsp?did=14508&prodName=TK17E65W
TK17E65W,S1X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 17.3A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 3.5V @ 900µA
Power Dissipation (Max): 165W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 8.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 23 Stücke:
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3+7.22 EUR
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TK8A65W,S5X docget.jsp?did=15580&prodName=TK8A65W
TK8A65W,S5X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 7.8A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Power Dissipation (Max): 30W (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 3.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.19 EUR
50+1.7 EUR
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TK17N65W,S1F docget.jsp?did=14509&prodName=TK17N65W
TK17N65W,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 17.3A TO247
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Part Status: Active
Supplier Device Package: TO-247
Vgs(th) (Max) @ Id: 3.5V @ 900µA
Power Dissipation (Max): 165W (Tc)
Rds On (Max) @ Id, Vgs: 200mOhm @ 8.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
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TK28N65W,S1F docget.jsp?did=14530&prodName=TK28N65W
TK28N65W,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 27.6A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 13.8A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.6mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 210 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+12.82 EUR
30+7.29 EUR
60+6.63 EUR
120+6.07 EUR
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TK14E65W5,S1X docget.jsp?did=14504&prodName=TK14E65W5
TK14E65W5,S1X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 13.7A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 690µA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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TK35A65W5,S5X docget.jsp?did=14533&prodName=TK35A65W5
TK35A65W5,S5X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 35A TO220SIS
auf Bestellung 76 Stücke:
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TK14N65W5,S1F docget.jsp?did=14526&prodName=TK14N65W5
TK14N65W5,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 13.7A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 690µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.62 EUR
30+5.34 EUR
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TK25A60X,S5X docget.jsp?did=15195&prodName=TK25A60X
TK25A60X,S5X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 25A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 32 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.13 EUR
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TK16E60W5,S1VX docget.jsp?did=14274&prodName=TK16E60W5
TK16E60W5,S1VX
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 15.8A TO220
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Power Dissipation (Max): 130W (Tc)
Rds On (Max) @ Id, Vgs: 230mOhm @ 7.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
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TK25A60X5,S5X docget.jsp?did=15552&prodName=TK25A60X5
TK25A60X5,S5X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 25A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
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TK8Q65W,S1Q TK8Q65W_datasheet_en_20140930.pdf?did=15581&prodName=TK8Q65W
TK8Q65W,S1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 7.8A IPAK
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: I-PAK
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Power Dissipation (Max): 80W (Tc)
Rds On (Max) @ Id, Vgs: 670mOhm @ 3.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Stub Leads, IPak
Packaging: Tube
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
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TK5A65W,S5X docget.jsp?did=15564&prodName=TK5A65W
TK5A65W,S5X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 5.2A TO-220SIS
auf Bestellung 98 Stücke:
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TK6A65W,S5X docget.jsp?did=15568&prodName=TK6A65W
TK6A65W,S5X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 5.8A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V
auf Bestellung 58 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.33 EUR
50+2.09 EUR
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TK7A65W,S5X docget.jsp?did=15574&prodName=TK7A65W
TK7A65W,S5X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 6.8A TO220SIS
Produkt ist nicht verfügbar
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TK9A65W,S5X docget.jsp?did=15583&prodName=TK9A65W
TK9A65W,S5X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 9.3A TO-220SIS
Produkt ist nicht verfügbar
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TK28A65W,S5X docget.jsp?did=15562&prodName=TK28A65W
TK28A65W,S5X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 27.6A TO220SIS
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 650 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-220SIS
Vgs(th) (Max) @ Id: 3.5V @ 1.6mA
Power Dissipation (Max): 45W (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 13.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+11.25 EUR
50+5.95 EUR
100+5.44 EUR
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TBD62003APG TBD62003AFG_datasheet_en_20150724.pdf?did=29886&prodName=TBD62003AFG
TBD62003APG
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-DIP
Part Status: Active
auf Bestellung 2103 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.65 EUR
10+3.45 EUR
25+3.15 EUR
100+2.83 EUR
250+2.67 EUR
500+2.57 EUR
1000+2.5 EUR
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TBD62004APG TBD62003AFG_datasheet_en_20150724.pdf?did=29886&prodName=TBD62003AFG
TBD62004APG
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-DIP
Part Status: Active
auf Bestellung 690 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
7+3.19 EUR
10+2.34 EUR
25+2.13 EUR
100+1.89 EUR
250+1.78 EUR
500+1.71 EUR
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TBD62083APG TBD62083AFG_datasheet_en_20160511.pdf?did=29893&prodName=TBD62083AFG
TBD62083APG
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 18DIP
Packaging: Tube
Package / Case: 18-DIP (0.300", 7.62mm)
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-DIP
Part Status: Active
auf Bestellung 7991 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+5.02 EUR
20+3.51 EUR
40+3.31 EUR
100+3.08 EUR
260+2.92 EUR
500+2.82 EUR
1000+2.73 EUR
2500+2.64 EUR
5000+2.59 EUR
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TBD62084APG TBD62083AFG_datasheet_en_20160511.pdf?did=29893&prodName=TBD62083AFG
TBD62084APG
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 18DIP
Packaging: Tube
Package / Case: 18-DIP (0.300", 7.62mm)
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-DIP
Part Status: Active
auf Bestellung 62 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+3.83 EUR
20+2.64 EUR
40+2.48 EUR
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TBD62783APG TBD62783AFG_datasheet_en_20160511.pdf?did=30523&prodName=TBD62783AFG
TBD62783APG
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH P-CHAN 1:1 18DIP
Packaging: Tube
Package / Case: 18-DIP (0.300", 7.62mm)
Output Type: P-Channel
Mounting Type: Through Hole
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-DIP
Part Status: Active
auf Bestellung 5741 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.38 EUR
21+3.75 EUR
42+3.52 EUR
105+3.3 EUR
252+3.13 EUR
504+3.02 EUR
1008+2.94 EUR
2520+2.84 EUR
5019+2.78 EUR
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TB6562ANG,8 TB6562AFG_datasheet_en_20120928.pdf?did=2725&prodName=TB6562AFG
TB6562ANG,8
Hersteller: Toshiba Semiconductor and Storage
Description: IC MTR DRV BIPOLAR 10-34V 24SDIP
Step Resolution: 1, 1/2, 1/4
Motor Type - AC, DC: Brushed DC
Motor Type - Stepper: Bipolar
Supplier Device Package: 24-SDIP
Voltage - Load: 10V ~ 34V
Technology: DMOS
Applications: General Purpose
Voltage - Supply: 10V ~ 34V
Output Configuration: Half Bridge (4)
Operating Temperature: -20°C ~ 150°C (TJ)
Interface: Parallel
Current - Output: 1.5A
Function: Driver - Fully Integrated, Control and Power Stage
Mounting Type: Through Hole
Package / Case: 24-SDIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 500 Stücke
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TBD62003AFG,EL TBD62003AFG_datasheet_en_20150724.pdf?did=29886&prodName=TBD62003AFG
TBD62003AFG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+1.26 EUR
4000+1.23 EUR
6000+1.21 EUR
Mindestbestellmenge: 2000 Stücke
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TBD62003AFNG,EL TBD62003AFG_datasheet_en_20150724.pdf?did=29886&prodName=TBD62003AFG
TBD62003AFNG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16SSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SSOP
Part Status: Active
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+1.55 EUR
Mindestbestellmenge: 2000 Stücke
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TBD62003AFWG,EL TBD62003AFG_datasheet_en_20150724.pdf?did=29886&prodName=TBD62003AFG
TBD62003AFWG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
Part Status: Active
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+1.02 EUR
4000+1 EUR
6000+0.99 EUR
10000+0.98 EUR
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TBD62004AFG,EL TBD62003AFG_datasheet_en_20150724.pdf?did=29886&prodName=TBD62003AFG
TBD62004AFG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2000+1.26 EUR
4000+1.23 EUR
6000+1.21 EUR
Mindestbestellmenge: 2000 Stücke
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