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SSM3K116TU,LF SSM3K116TU,LF Toshiba Semiconductor and Storage SSM3K116TU_datasheet_en_20140301.pdf?did=6165&prodName=SSM3K116TU Description: MOSFET N-CH 30V 2.2A UFM
Input Capacitance (Ciss) (Max) @ Vds: 245 pF @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: UFM
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Tape & Reel (TR)
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SSM3K16FU,LF SSM3K16FU,LF Toshiba Semiconductor and Storage SSM3K16FU_datasheet_en_20140301.pdf?did=19613&prodName=SSM3K16FU Description: MOSFET N-CH 20V 100MA USM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Supplier Device Package: USM
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
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SSM3J15FU,LF SSM3J15FU,LF Toshiba Semiconductor and Storage docget.jsp?did=22747&prodName=SSM3J15FU Description: MOSFET P-CH 30V 100MA USM
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Supplier Device Package: USM
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
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SSM3J15FV,L3F SSM3J15FV,L3F Toshiba Semiconductor and Storage docget.jsp?did=593&prodName=SSM3J15FV Description: MOSFET P-CH 30V 100MA VESM
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Part Status: Active
Supplier Device Package: VESM
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
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TCR2EF20,LM(CT TCR2EF20,LM(CT Toshiba Semiconductor and Storage TCR2EF45_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF45 Description: IC REG LINEAR 2V 200MA SMV
Protection Features: Over Current
Voltage Dropout (Max): 0.31V @ 150mA
PSRR: 73dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 2V
Supplier Device Package: SMV
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
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TCR2DG15,LF TCR2DG15,LF Toshiba Semiconductor and Storage docget.jsp?did=14028&prodName=TCR2DG12 Description: IC REG LINEAR 1.5V 200MA 4WCSP
Produkt ist nicht verfügbar
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TC7PZ07FU,LJ(CT TC7PZ07FU,LJ(CT Toshiba Semiconductor and Storage TC7PZ07FU_datasheet_en_20190807.pdf?did=30532&prodName=TC7PZ07FU Description: IC BUFFER NON-INVERT 5.5V US6
Supplier Device Package: US6
Current - Output High, Low: -, 32mA
Number of Bits per Element: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Open Drain
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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TC7PZ17FU,LJ(CT TC7PZ17FU,LJ(CT Toshiba Semiconductor and Storage TC7PZ17FU_datasheet_en_20171205.pdf?did=14436&prodName=TC7PZ17FU Description: IC BUFFER NON-INVERTING 5.5V US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: US6
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74VHCV245FT(BJ) 74VHCV245FT(BJ) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=74VHCV245FT Description: IC BUS TRANSCEIVER 8BIT 20TSSOP
Produkt ist nicht verfügbar
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TC7USB3212WBG(ELAH TC7USB3212WBG(ELAH Toshiba Semiconductor and Storage Description: IC MUX/DEMUX 4 X 1:2 20WCSP
Supplier Device Package: 2-WCSP (2x1.6)
Voltage Supply Source: Single Supply
Independent Circuits: 4
Voltage - Supply: 1.65V ~ 1.95V
Operating Temperature: -40°C ~ 85°C
Type: Multiplexer/Demultiplexer
Circuit: 4 x 1:2
Mounting Type: Surface Mount
Package / Case: 20-UFBGA, WLCSP
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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DF3D36FU,LF DF3D36FU,LF Toshiba Semiconductor and Storage DF3D36FU_Web.pdf Description: ESD PROTECTION DIODE (BI-DIRECTI
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SSM3K72CFS,LF SSM3K72CFS,LF Toshiba Semiconductor and Storage docget.jsp?did=35826&prodName=SSM3K72CFS Description: MOSFET N-CH 60V 170MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
auf Bestellung 49875 Stücke:
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174+0.12 EUR
500+0.088 EUR
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SSM3K72KCT,L3F SSM3K72KCT,L3F Toshiba Semiconductor and Storage docget.jsp?did=35719&prodName=SSM3K72KCT Description: MOSFET N-CH 60V 400MA CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: CST3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
auf Bestellung 273623 Stücke:
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SSM3K7002KF,LF SSM3K7002KF,LF Toshiba Semiconductor and Storage docget.jsp?did=35718&prodName=SSM3K7002KF Description: MOSFET N-CH 60V 400MA S-MINI
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: S-Mini
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 270mW (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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SSM3K341R,LF SSM3K341R,LF Toshiba Semiconductor and Storage docget.jsp?did=35714&prodName=SSM3K341R Description: MOSFET N-CH 60V 6A SOT-23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
auf Bestellung 138438 Stücke:
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TCK107AF,LF TCK107AF,LF Toshiba Semiconductor and Storage docget.jsp?did=53240&prodName=TCK107AF Description: IC PWR LOAD SWITCH LO ON-RES SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Rds On (Typ): 63mOhm
Voltage - Load: 1.1V ~ 5.5V
Current - Output (Max): 1A
Supplier Device Package: SMV
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SSM6N61NU,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM6N61NU Description: MOSFET 2P-CH 20V 4A
Produkt ist nicht verfügbar
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SSM6J511NU,LF SSM6J511NU,LF Toshiba Semiconductor and Storage docget.jsp?did=30767&prodName=SSM6J511NU Description: MOSFET P-CH 12V 14A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 4A, 8V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 6 V
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SSM3K116TU,LF SSM3K116TU,LF Toshiba Semiconductor and Storage SSM3K116TU_datasheet_en_20140301.pdf?did=6165&prodName=SSM3K116TU Description: MOSFET N-CH 30V 2.2A UFM
Input Capacitance (Ciss) (Max) @ Vds: 245 pF @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: UFM
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Cut Tape (CT)
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SSM3K16FU,LF SSM3K16FU,LF Toshiba Semiconductor and Storage SSM3K16FU_datasheet_en_20140301.pdf?did=19613&prodName=SSM3K16FU Description: MOSFET N-CH 20V 100MA USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: USM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
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SSM3J15FU,LF SSM3J15FU,LF Toshiba Semiconductor and Storage docget.jsp?did=22747&prodName=SSM3J15FU Description: MOSFET P-CH 30V 100MA USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: USM
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
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SSM3J15FV,L3F SSM3J15FV,L3F Toshiba Semiconductor and Storage docget.jsp?did=593&prodName=SSM3J15FV Description: MOSFET P-CH 30V 100MA VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: VESM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
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TCR2EF20,LM(CT TCR2EF20,LM(CT Toshiba Semiconductor and Storage TCR2EF45_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF45 Description: IC REG LINEAR 2V 200MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 2V
Control Features: Enable
Part Status: Active
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.31V @ 150mA
Protection Features: Over Current
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TCR2DG15,LF TCR2DG15,LF Toshiba Semiconductor and Storage docget.jsp?did=14028&prodName=TCR2DG12 Description: IC REG LINEAR 1.5V 200MA 4WCSP
Produkt ist nicht verfügbar
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TC7PZ07FU,LJ(CT TC7PZ07FU,LJ(CT Toshiba Semiconductor and Storage TC7PZ07FU_datasheet_en_20190807.pdf?did=30532&prodName=TC7PZ07FU Description: IC BUFFER NON-INVERT 5.5V US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: US6
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TC7PZ17FU,LJ(CT TC7PZ17FU,LJ(CT Toshiba Semiconductor and Storage TC7PZ17FU_datasheet_en_20171205.pdf?did=14436&prodName=TC7PZ17FU Description: IC BUFFER NON-INVERTING 5.5V US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: US6
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196+0.11 EUR
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500+0.092 EUR
1000+0.087 EUR
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74VHCV245FT(BJ) 74VHCV245FT(BJ) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=74VHCV245FT Description: IC BUS TRANSCEIVER 8BIT 20TSSOP
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DF3D36FU,LF DF3D36FU,LF Toshiba Semiconductor and Storage DF3D36FU_Web.pdf Description: ESD PROTECTION DIODE (BI-DIRECTI
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SSM6N61NU,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM6N61NU Description: MOSFET 2P-CH 20V 4A
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74VHCV245FT(BJ) 74VHCV245FT(BJ) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=74VHCV245FT Description: IC BUS TRANSCEIVER 8BIT 20TSSOP
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TBD62064AFG,EL TBD62064AFG,EL Toshiba Semiconductor and Storage TBD62064APG_datasheet_en_20151217.pdf?did=30811&prodName=TBD62064APG Description: IC PWR DRIVER N-CHAN 1:1 16HSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Rds On (Typ): 430mOhm
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.25A
Ratio - Input:Output: 1:1
Supplier Device Package: 16-HSOP
Part Status: Active
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1SS389,L3F 1SS389,L3F Toshiba Semiconductor and Storage docget.jsp?did=3371&prodName=1SS389 Description: DIODE SCHOTTKY 10V 100MA ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
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1SS389,L3F 1SS389,L3F Toshiba Semiconductor and Storage docget.jsp?did=3371&prodName=1SS389 Description: DIODE SCHOTTKY 10V 100MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
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TBD62064AFG,EL TBD62064AFG,EL Toshiba Semiconductor and Storage TBD62064APG_datasheet_en_20151217.pdf?did=30811&prodName=TBD62064APG Description: IC PWR DRIVER N-CHAN 1:1 16HSOP
Packaging: Cut Tape (CT)
Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Rds On (Typ): 430mOhm
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.25A
Ratio - Input:Output: 1:1
Supplier Device Package: 16-HSOP
Part Status: Active
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TLP184(GB,SE TLP184(GB,SE Toshiba Semiconductor and Storage TLP184%28SE_datasheet_en_20191118.pdf?did=14118&prodName=TLP184(SE Description: OPTOISO 3.75KV 1CH TRANS 6-SOP
Packaging: Tube
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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SSM6L16FETE85LF SSM6L16FETE85LF Toshiba Semiconductor and Storage docget.jsp?did=1226&prodName=SSM6L16FE Description: MOSFET N/P-CH 20V 0.18A/0.1A ES6
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SSM6L16FETE85LF SSM6L16FETE85LF Toshiba Semiconductor and Storage docget.jsp?did=1226&prodName=SSM6L16FE Description: MOSFET N/P-CH 20V 0.18A/0.1A ES6
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TLP2703(E TLP2703(E Toshiba Semiconductor and Storage docget.jsp?did=15216&prodName=TLP2703 Description: OPTOISOLATOR 5KV 1CH DARL 6-SO
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Part Status: Active
Turn On / Turn Off Time (Typ): 330ns, 2.5µs
Voltage - Output (Max): 18V
Supplier Device Package: 6-SO
Current Transfer Ratio (Max): 8000% @ 500µA
Current Transfer Ratio (Min): 900% @ 500µA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 80mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.47V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Darlington
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Bulk
Produkt ist nicht verfügbar
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TLP2703(TP,E TLP2703(TP,E Toshiba Semiconductor and Storage docget.jsp?did=15216&prodName=TLP2703 Description: OPTOISOLATOR 5KV 1CH DARL 6-SO
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Turn On / Turn Off Time (Typ): 330ns, 2.5µs
Voltage - Output (Max): 18V
Supplier Device Package: 6-SO
Current Transfer Ratio (Max): 8000% @ 500µA
Current Transfer Ratio (Min): 900% @ 500µA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 80mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.47V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Darlington
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Part Status: Active
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TLP2703(TP,E TLP2703(TP,E Toshiba Semiconductor and Storage docget.jsp?did=15216&prodName=TLP2703 Description: OPTOISOLATOR 5KV 1CH DARL 6-SO
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Part Status: Active
Turn On / Turn Off Time (Typ): 330ns, 2.5µs
Voltage - Output (Max): 18V
Supplier Device Package: 6-SO
Current Transfer Ratio (Max): 8000% @ 500µA
Current Transfer Ratio (Min): 900% @ 500µA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 80mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.47V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Darlington
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
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TPHR6503PL,L1Q TPHR6503PL,L1Q Toshiba Semiconductor and Storage TPHR6503PL_datasheet_en_20191018.pdf?did=35760&prodName=TPHR6503PL Description: MOSFET N-CH 30V 150A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 15 V
auf Bestellung 70000 Stücke:
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TPN3R704PL,L1Q TPN3R704PL,L1Q Toshiba Semiconductor and Storage docget.jsp?did=30643&prodName=TPN3R704PL Description: MOSFET N-CH 40V 80A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 40A, 10V
Power Dissipation (Max): 630mW (Ta), 86W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 20 V
Produkt ist nicht verfügbar
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TPN2R304PL,L1Q TPN2R304PL,L1Q Toshiba Semiconductor and Storage docget.jsp?did=30264&prodName=TPN2R304PL Description: MOSFET N-CH 40V 80A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 40A, 10V
Power Dissipation (Max): 630mW (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 300µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 20 V
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TPH3R704PL,L1Q TPH3R704PL,L1Q Toshiba Semiconductor and Storage docget.jsp?did=30712&prodName=TPH3R704PL Description: MOSFET N-CH 40V 92A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 46A, 10V
Power Dissipation (Max): 960mW (Ta), 81W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 20 V
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5000+0.77 EUR
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TPHR6503PL,L1Q TPHR6503PL,L1Q Toshiba Semiconductor and Storage TPHR6503PL_datasheet_en_20191018.pdf?did=35760&prodName=TPHR6503PL Description: MOSFET N-CH 30V 150A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 15 V
auf Bestellung 72189 Stücke:
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50+2.93 EUR
100+2.63 EUR
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TPN3R704PL,L1Q TPN3R704PL,L1Q Toshiba Semiconductor and Storage docget.jsp?did=30643&prodName=TPN3R704PL Description: MOSFET N-CH 40V 80A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 40A, 10V
Power Dissipation (Max): 630mW (Ta), 86W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 20 V
Produkt ist nicht verfügbar
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TPN2R304PL,L1Q TPN2R304PL,L1Q Toshiba Semiconductor and Storage docget.jsp?did=30264&prodName=TPN2R304PL Description: MOSFET N-CH 40V 80A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 40A, 10V
Power Dissipation (Max): 630mW (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 300µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 20 V
auf Bestellung 62135 Stücke:
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8+2.84 EUR
12+1.78 EUR
50+1.33 EUR
100+1.19 EUR
500+0.93 EUR
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TPH3R704PL,L1Q TPH3R704PL,L1Q Toshiba Semiconductor and Storage docget.jsp?did=30712&prodName=TPH3R704PL Description: MOSFET N-CH 40V 92A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 46A, 10V
Power Dissipation (Max): 960mW (Ta), 81W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 20 V
auf Bestellung 31515 Stücke:
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12+1.83 EUR
50+1.37 EUR
100+1.21 EUR
500+0.95 EUR
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TC35662IXBG(EL) Toshiba Semiconductor and Storage Description: IC RF TXRX+MCU BLUETOOTH
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TC35662IXBG(EL) Toshiba Semiconductor and Storage Description: IC RF TXRX+MCU BLUETOOTH
auf Bestellung 999 Stücke:
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SSM3K361R,LF SSM3K361R,LF Toshiba Semiconductor and Storage docget.jsp?did=36685&prodName=SSM3K361R Description: MOSFET N-CH 100V 3.5A SOT-23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
auf Bestellung 6000 Stücke:
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3000+0.38 EUR
Mindestbestellmenge: 3000 Stücke
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TBAS16,LM TBAS16,LM Toshiba Semiconductor and Storage docget.jsp?did=55280&prodName=TBAS16 Description: DIODE STANDARD 80V 215MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 215mA
Supplier Device Package: SOT-23-3
Voltage - DC Reverse (Vr) (Max): 80 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.071 EUR
Mindestbestellmenge: 3000 Stücke
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TBAT54S,LM TBAT54S,LM Toshiba Semiconductor and Storage docget.jsp?did=37137&prodName=TBAT54S Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 273000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.071 EUR
9000+0.06 EUR
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TBAV70,LM TBAV70,LM Toshiba Semiconductor and Storage TBAS16_TBAW56_TBAV70.pdf Description: DIODE ARRAY GP 80V 215MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 215mA
Supplier Device Package: SOT-23-3
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
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TBAW56,LM TBAW56,LM Toshiba Semiconductor and Storage docget.jsp?did=55284&prodName=TBAW56 Description: DIODE ARRAY GP 80V 215MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 215mA
Supplier Device Package: SOT-23-3
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
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74HC14D 74HC14D Toshiba Semiconductor and Storage docget.jsp?did=36766&prodName=74HC14D Description: IC INV 6-CIR 1-IN 14-SOIC
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 1
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.3V ~ 1.5V
Max Propagation Delay @ V, Max CL: 21ns @ 6V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
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74HC245D 74HC245D Toshiba Semiconductor and Storage docget.jsp?did=37029&prodName=74HC245D description Description: IC TXRX 2V/6V 20-SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOIC
Part Status: Active
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74HC32D 74HC32D Toshiba Semiconductor and Storage docget.jsp?did=37238&prodName=74HC32D Description: IC OR 4-CIR 2-IN 14-SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
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74HC4051D 74HC4051D Toshiba Semiconductor and Storage docget.jsp?did=37237&prodName=74HC4051D Description: IC MUX 8:1 130OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 130Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2V ~ 6V
Crosstalk: -50dB @ 1MHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 4Ohm
Switch Time (Ton, Toff) (Max): 34ns, 32ns
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 1µA
Part Status: Active
Number of Circuits: 1
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74HC4052D 74HC4052D Toshiba Semiconductor and Storage docget.jsp?did=37237&prodName=74HC4052D Description: IC SWITCH SP4T X 2 130OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 130Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2V ~ 6V
Crosstalk: -50dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 4Ohm
Switch Time (Ton, Toff) (Max): 34ns, 32ns
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 1µA
Part Status: Active
Number of Circuits: 2
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SSM3K116TU,LF SSM3K116TU_datasheet_en_20140301.pdf?did=6165&prodName=SSM3K116TU
SSM3K116TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 2.2A UFM
Input Capacitance (Ciss) (Max) @ Vds: 245 pF @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: UFM
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Tape & Reel (TR)
auf Bestellung 36000 Stücke:
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SSM3K16FU,LF SSM3K16FU_datasheet_en_20140301.pdf?did=19613&prodName=SSM3K16FU
SSM3K16FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 100MA USM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Supplier Device Package: USM
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±10V
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SSM3J15FU,LF docget.jsp?did=22747&prodName=SSM3J15FU
SSM3J15FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 100MA USM
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Supplier Device Package: USM
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
auf Bestellung 21000 Stücke:
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3000+0.087 EUR
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SSM3J15FV,L3F docget.jsp?did=593&prodName=SSM3J15FV
SSM3J15FV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 100MA VESM
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Part Status: Active
Supplier Device Package: VESM
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-723
Packaging: Tape & Reel (TR)
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TCR2EF20,LM(CT TCR2EF45_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF45
TCR2EF20,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2V 200MA SMV
Protection Features: Over Current
Voltage Dropout (Max): 0.31V @ 150mA
PSRR: 73dB (1kHz)
Part Status: Active
Control Features: Enable
Voltage - Output (Min/Fixed): 2V
Supplier Device Package: SMV
Number of Regulators: 1
Voltage - Input (Max): 5.5V
Current - Quiescent (Iq): 60 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 200mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: SC-74A, SOT-753
Packaging: Tape & Reel (TR)
auf Bestellung 9000 Stücke:
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TCR2DG15,LF docget.jsp?did=14028&prodName=TCR2DG12
TCR2DG15,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.5V 200MA 4WCSP
Produkt ist nicht verfügbar
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TC7PZ07FU,LJ(CT TC7PZ07FU_datasheet_en_20190807.pdf?did=30532&prodName=TC7PZ07FU
TC7PZ07FU,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V US6
Supplier Device Package: US6
Current - Output High, Low: -, 32mA
Number of Bits per Element: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 2
Mounting Type: Surface Mount
Output Type: Open Drain
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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TC7PZ17FU,LJ(CT TC7PZ17FU_datasheet_en_20171205.pdf?did=14436&prodName=TC7PZ17FU
TC7PZ17FU,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERTING 5.5V US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: US6
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74VHCV245FT(BJ) docget.jsp?type=datasheet&lang=en&pid=74VHCV245FT
74VHCV245FT(BJ)
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS TRANSCEIVER 8BIT 20TSSOP
Produkt ist nicht verfügbar
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TC7USB3212WBG(ELAH
TC7USB3212WBG(ELAH
Hersteller: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX 4 X 1:2 20WCSP
Supplier Device Package: 2-WCSP (2x1.6)
Voltage Supply Source: Single Supply
Independent Circuits: 4
Voltage - Supply: 1.65V ~ 1.95V
Operating Temperature: -40°C ~ 85°C
Type: Multiplexer/Demultiplexer
Circuit: 4 x 1:2
Mounting Type: Surface Mount
Package / Case: 20-UFBGA, WLCSP
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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DF3D36FU,LF DF3D36FU_Web.pdf
DF3D36FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: ESD PROTECTION DIODE (BI-DIRECTI
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SSM3K72CFS,LF docget.jsp?did=35826&prodName=SSM3K72CFS
SSM3K72CFS,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 170MA SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SSM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
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SSM3K72KCT,L3F docget.jsp?did=35719&prodName=SSM3K72KCT
SSM3K72KCT,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 400MA CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: CST3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
auf Bestellung 273623 Stücke:
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SSM3K7002KF,LF docget.jsp?did=35718&prodName=SSM3K7002KF
SSM3K7002KF,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 400MA S-MINI
Input Capacitance (Ciss) (Max) @ Vds: 40 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 0.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: S-Mini
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 270mW (Ta)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Current - Continuous Drain (Id) @ 25°C: 400mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 71465 Stücke:
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40+0.52 EUR
64+0.33 EUR
90+0.24 EUR
103+0.2 EUR
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SSM3K341R,LF docget.jsp?did=35714&prodName=SSM3K341R
SSM3K341R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 6A SOT-23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 36mOhm @ 5A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 9.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 10 V
auf Bestellung 138438 Stücke:
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15+1.43 EUR
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50+0.64 EUR
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TCK107AF,LF docget.jsp?did=53240&prodName=TCK107AF
TCK107AF,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR LOAD SWITCH LO ON-RES SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Mounting Type: Surface Mount
Rds On (Typ): 63mOhm
Voltage - Load: 1.1V ~ 5.5V
Current - Output (Max): 1A
Supplier Device Package: SMV
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34+0.63 EUR
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56+0.38 EUR
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SSM6N61NU,LF docget.jsp?type=datasheet&lang=en&pid=SSM6N61NU
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 4A
Produkt ist nicht verfügbar
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SSM6J511NU,LF docget.jsp?did=30767&prodName=SSM6J511NU
SSM6J511NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 12V 14A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta)
Rds On (Max) @ Id, Vgs: 9.1mOhm @ 4A, 8V
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 3350 pF @ 6 V
auf Bestellung 32628 Stücke:
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16+1.34 EUR
26+0.83 EUR
50+0.61 EUR
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SSM3K116TU,LF SSM3K116TU_datasheet_en_20140301.pdf?did=6165&prodName=SSM3K116TU
SSM3K116TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 2.2A UFM
Input Capacitance (Ciss) (Max) @ Vds: 245 pF @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: UFM
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 100mOhm @ 500mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 3-SMD, Flat Leads
Packaging: Cut Tape (CT)
auf Bestellung 39100 Stücke:
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21+1.02 EUR
27+0.8 EUR
100+0.48 EUR
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SSM3K16FU,LF SSM3K16FU_datasheet_en_20140301.pdf?did=19613&prodName=SSM3K16FU
SSM3K16FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 100MA USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 100µA
Supplier Device Package: USM
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Input Capacitance (Ciss) (Max) @ Vds: 9.3 pF @ 3 V
auf Bestellung 29064 Stücke:
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56+0.38 EUR
113+0.19 EUR
500+0.15 EUR
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SSM3J15FU,LF docget.jsp?did=22747&prodName=SSM3J15FU
SSM3J15FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 100MA USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: USM
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
auf Bestellung 22168 Stücke:
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50+0.42 EUR
80+0.26 EUR
129+0.17 EUR
500+0.12 EUR
1000+0.1 EUR
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SSM3J15FV,L3F docget.jsp?did=593&prodName=SSM3J15FV
SSM3J15FV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 100MA VESM
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.7V @ 100µA
Supplier Device Package: VESM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 9.1 pF @ 3 V
auf Bestellung 22930 Stücke:
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50+0.42 EUR
84+0.25 EUR
117+0.18 EUR
135+0.15 EUR
500+0.11 EUR
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TCR2EF20,LM(CT TCR2EF45_datasheet_en_20190620.pdf?did=13794&prodName=TCR2EF45
TCR2EF20,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2V 200MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 60 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 2V
Control Features: Enable
Part Status: Active
PSRR: 73dB (1kHz)
Voltage Dropout (Max): 0.31V @ 150mA
Protection Features: Over Current
auf Bestellung 12856 Stücke:
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84+0.25 EUR
125+0.17 EUR
143+0.14 EUR
169+0.12 EUR
250+0.11 EUR
500+0.11 EUR
1000+0.1 EUR
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TCR2DG15,LF docget.jsp?did=14028&prodName=TCR2DG12
TCR2DG15,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.5V 200MA 4WCSP
Produkt ist nicht verfügbar
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TC7PZ07FU,LJ(CT TC7PZ07FU_datasheet_en_20190807.pdf?did=30532&prodName=TC7PZ07FU
TC7PZ07FU,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERT 5.5V US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Open Drain
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: -, 32mA
Supplier Device Package: US6
auf Bestellung 6746 Stücke:
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33+0.65 EUR
56+0.38 EUR
69+0.31 EUR
100+0.23 EUR
250+0.19 EUR
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TC7PZ17FU,LJ(CT TC7PZ17FU_datasheet_en_20171205.pdf?did=14436&prodName=TC7PZ17FU
TC7PZ17FU,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUFFER NON-INVERTING 5.5V US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Input Type: Schmitt Trigger
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: US6
auf Bestellung 7669 Stücke:
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100+0.21 EUR
143+0.14 EUR
165+0.13 EUR
196+0.11 EUR
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74VHCV245FT(BJ) docget.jsp?type=datasheet&lang=en&pid=74VHCV245FT
74VHCV245FT(BJ)
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS TRANSCEIVER 8BIT 20TSSOP
Produkt ist nicht verfügbar
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DF3D36FU,LF DF3D36FU_Web.pdf
DF3D36FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: ESD PROTECTION DIODE (BI-DIRECTI
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SSM6N61NU,LF docget.jsp?type=datasheet&lang=en&pid=SSM6N61NU
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2P-CH 20V 4A
Produkt ist nicht verfügbar
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74VHCV245FT(BJ) docget.jsp?type=datasheet&lang=en&pid=74VHCV245FT
74VHCV245FT(BJ)
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS TRANSCEIVER 8BIT 20TSSOP
Produkt ist nicht verfügbar
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TBD62064AFG,EL TBD62064APG_datasheet_en_20151217.pdf?did=30811&prodName=TBD62064APG
TBD62064AFG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR DRIVER N-CHAN 1:1 16HSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Rds On (Typ): 430mOhm
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.25A
Ratio - Input:Output: 1:1
Supplier Device Package: 16-HSOP
Part Status: Active
auf Bestellung 27000 Stücke:
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1500+2.62 EUR
3000+2.56 EUR
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1SS389,L3F docget.jsp?did=3371&prodName=1SS389
1SS389,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 10V 100MA ESC
Packaging: Tape & Reel (TR)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
auf Bestellung 71100 Stücke:
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8000+0.064 EUR
24000+0.055 EUR
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1SS389,L3F docget.jsp?did=3371&prodName=1SS389
1SS389,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 10V 100MA ESC
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 40pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: ESC
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 10 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 20 µA @ 10 V
auf Bestellung 71529 Stücke:
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56+0.38 EUR
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129+0.17 EUR
149+0.14 EUR
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TBD62064AFG,EL TBD62064APG_datasheet_en_20151217.pdf?did=30811&prodName=TBD62064APG
TBD62064AFG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR DRIVER N-CHAN 1:1 16HSOP
Packaging: Cut Tape (CT)
Package / Case: 16-BSOP (0.252", 6.40mm Width) + 2 Heat Tabs
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 4
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Rds On (Typ): 430mOhm
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 1.25A
Ratio - Input:Output: 1:1
Supplier Device Package: 16-HSOP
Part Status: Active
auf Bestellung 27074 Stücke:
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5+4.93 EUR
10+3.67 EUR
25+3.34 EUR
100+3 EUR
250+2.84 EUR
500+2.77 EUR
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TLP184(GB,SE TLP184%28SE_datasheet_en_20191118.pdf?did=14118&prodName=TLP184(SE
TLP184(GB,SE
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV 1CH TRANS 6-SOP
Packaging: Tube
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 300mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 6-SOP
Voltage - Output (Max): 80V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Rise / Fall Time (Typ): 2µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 149 Stücke:
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125+0.52 EUR
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SSM6L16FETE85LF docget.jsp?did=1226&prodName=SSM6L16FE
SSM6L16FETE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.18A/0.1A ES6
Produkt ist nicht verfügbar
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SSM6L16FETE85LF docget.jsp?did=1226&prodName=SSM6L16FE
SSM6L16FETE85LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N/P-CH 20V 0.18A/0.1A ES6
auf Bestellung 79 Stücke:
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TLP2703(E docget.jsp?did=15216&prodName=TLP2703
TLP2703(E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH DARL 6-SO
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Part Status: Active
Turn On / Turn Off Time (Typ): 330ns, 2.5µs
Voltage - Output (Max): 18V
Supplier Device Package: 6-SO
Current Transfer Ratio (Max): 8000% @ 500µA
Current Transfer Ratio (Min): 900% @ 500µA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 80mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.47V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Darlington
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Bulk
Produkt ist nicht verfügbar
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TLP2703(TP,E docget.jsp?did=15216&prodName=TLP2703
TLP2703(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH DARL 6-SO
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Turn On / Turn Off Time (Typ): 330ns, 2.5µs
Voltage - Output (Max): 18V
Supplier Device Package: 6-SO
Current Transfer Ratio (Max): 8000% @ 500µA
Current Transfer Ratio (Min): 900% @ 500µA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 80mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.47V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Darlington
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Part Status: Active
auf Bestellung 3000 Stücke:
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1500+1.05 EUR
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TLP2703(TP,E docget.jsp?did=15216&prodName=TLP2703
TLP2703(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISOLATOR 5KV 1CH DARL 6-SO
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Part Status: Active
Turn On / Turn Off Time (Typ): 330ns, 2.5µs
Voltage - Output (Max): 18V
Supplier Device Package: 6-SO
Current Transfer Ratio (Max): 8000% @ 500µA
Current Transfer Ratio (Min): 900% @ 500µA
Voltage - Isolation: 5000Vrms
Current - Output / Channel: 80mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.47V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Darlington
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 3195 Stücke:
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9+2.53 EUR
12+1.78 EUR
100+1.34 EUR
500+1.14 EUR
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TPHR6503PL,L1Q TPHR6503PL_datasheet_en_20191018.pdf?did=35760&prodName=TPHR6503PL
TPHR6503PL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 150A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 15 V
auf Bestellung 70000 Stücke:
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AnzahlPrivatkunde
5000+1.69 EUR
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TPN3R704PL,L1Q docget.jsp?did=30643&prodName=TPN3R704PL
TPN3R704PL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 80A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 40A, 10V
Power Dissipation (Max): 630mW (Ta), 86W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 20 V
Produkt ist nicht verfügbar
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TPN2R304PL,L1Q docget.jsp?did=30264&prodName=TPN2R304PL
TPN2R304PL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 80A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 40A, 10V
Power Dissipation (Max): 630mW (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 300µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 20 V
auf Bestellung 60000 Stücke:
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AnzahlPrivatkunde
5000+0.7 EUR
15000+0.63 EUR
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TPH3R704PL,L1Q docget.jsp?did=30712&prodName=TPH3R704PL
TPH3R704PL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 92A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 46A, 10V
Power Dissipation (Max): 960mW (Ta), 81W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 20 V
auf Bestellung 25000 Stücke:
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5000+0.77 EUR
15000+0.73 EUR
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TPHR6503PL,L1Q TPHR6503PL_datasheet_en_20191018.pdf?did=35760&prodName=TPHR6503PL
TPHR6503PL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 150A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 170W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10000 pF @ 15 V
auf Bestellung 72189 Stücke:
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4+5.89 EUR
10+3.81 EUR
50+2.93 EUR
100+2.63 EUR
500+2.13 EUR
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TPN3R704PL,L1Q docget.jsp?did=30643&prodName=TPN3R704PL
TPN3R704PL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 80A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 40A, 10V
Power Dissipation (Max): 630mW (Ta), 86W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 20 V
Produkt ist nicht verfügbar
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TPN2R304PL,L1Q docget.jsp?did=30264&prodName=TPN2R304PL
TPN2R304PL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 80A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 2.3mOhm @ 40A, 10V
Power Dissipation (Max): 630mW (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 300µA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 20 V
auf Bestellung 62135 Stücke:
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8+2.84 EUR
12+1.78 EUR
50+1.33 EUR
100+1.19 EUR
500+0.93 EUR
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TPH3R704PL,L1Q docget.jsp?did=30712&prodName=TPH3R704PL
TPH3R704PL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 92A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 92A (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 46A, 10V
Power Dissipation (Max): 960mW (Ta), 81W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 200µA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 20 V
auf Bestellung 31515 Stücke:
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8+2.92 EUR
12+1.83 EUR
50+1.37 EUR
100+1.21 EUR
500+0.95 EUR
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TC35662IXBG(EL)
Hersteller: Toshiba Semiconductor and Storage
Description: IC RF TXRX+MCU BLUETOOTH
Produkt ist nicht verfügbar
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TC35662IXBG(EL)
Hersteller: Toshiba Semiconductor and Storage
Description: IC RF TXRX+MCU BLUETOOTH
auf Bestellung 999 Stücke:
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SSM3K361R,LF docget.jsp?did=36685&prodName=SSM3K361R
SSM3K361R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 100V 3.5A SOT-23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 175°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 69mOhm @ 2A, 10V
Power Dissipation (Max): 1.2W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.2 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 15 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.38 EUR
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TBAS16,LM docget.jsp?did=55280&prodName=TBAS16
TBAS16,LM
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 80V 215MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 215mA
Supplier Device Package: SOT-23-3
Voltage - DC Reverse (Vr) (Max): 80 V
auf Bestellung 3000 Stücke:
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3000+0.071 EUR
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TBAT54S,LM docget.jsp?did=37137&prodName=TBAT54S
TBAT54S,LM
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
auf Bestellung 273000 Stücke:
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3000+0.071 EUR
9000+0.06 EUR
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TBAV70,LM TBAS16_TBAW56_TBAV70.pdf
TBAV70,LM
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 215MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 215mA
Supplier Device Package: SOT-23-3
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
auf Bestellung 150000 Stücke:
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AnzahlPrivatkunde
3000+0.068 EUR
9000+0.056 EUR
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TBAW56,LM docget.jsp?did=55284&prodName=TBAW56
TBAW56,LM
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 215MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 1 Pair Common Anode
Current - Average Rectified (Io) (per Diode): 215mA
Supplier Device Package: SOT-23-3
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.073 EUR
9000+0.061 EUR
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74HC14D docget.jsp?did=36766&prodName=74HC14D
74HC14D
Hersteller: Toshiba Semiconductor and Storage
Description: IC INV 6-CIR 1-IN 14-SOIC
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 1
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.3V ~ 1.5V
Max Propagation Delay @ V, Max CL: 21ns @ 6V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
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74HC245D description docget.jsp?did=37029&prodName=74HC245D
74HC245D
Hersteller: Toshiba Semiconductor and Storage
Description: IC TXRX 2V/6V 20-SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 2V ~ 6V
Number of Bits per Element: 8
Current - Output High, Low: 7.8mA, 7.8mA
Supplier Device Package: 20-SOIC
Part Status: Active
auf Bestellung 141 Stücke:
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22+0.96 EUR
31+0.68 EUR
35+0.61 EUR
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74HC32D docget.jsp?did=37238&prodName=74HC32D
74HC32D
Hersteller: Toshiba Semiconductor and Storage
Description: IC OR 4-CIR 2-IN 14-SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 13ns @ 6V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
auf Bestellung 9710 Stücke:
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AnzahlPrivatkunde
34+0.63 EUR
49+0.43 EUR
55+0.38 EUR
100+0.33 EUR
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500+0.29 EUR
1000+0.27 EUR
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74HC4051D docget.jsp?did=37237&prodName=74HC4051D
74HC4051D
Hersteller: Toshiba Semiconductor and Storage
Description: IC MUX 8:1 130OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 130Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2V ~ 6V
Crosstalk: -50dB @ 1MHz
Multiplexer/Demultiplexer Circuit: 8:1
Channel-to-Channel Matching (ΔRon): 4Ohm
Switch Time (Ton, Toff) (Max): 34ns, 32ns
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 1µA
Part Status: Active
Number of Circuits: 1
auf Bestellung 29791 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
35+0.61 EUR
51+0.42 EUR
57+0.37 EUR
100+0.32 EUR
250+0.3 EUR
500+0.27 EUR
1000+0.26 EUR
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74HC4052D docget.jsp?did=37237&prodName=74HC4052D
74HC4052D
Hersteller: Toshiba Semiconductor and Storage
Description: IC SWITCH SP4T X 2 130OHM 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 130Ohm
Supplier Device Package: 16-SOIC
Voltage - Supply, Single (V+): 2V ~ 6V
Crosstalk: -50dB @ 1MHz
Switch Circuit: SP4T
Multiplexer/Demultiplexer Circuit: 4:1
Channel-to-Channel Matching (ΔRon): 4Ohm
Switch Time (Ton, Toff) (Max): 34ns, 32ns
Channel Capacitance (CS(off), CD(off)): 10pF
Current - Leakage (IS(off)) (Max): 1µA
Part Status: Active
Number of Circuits: 2
auf Bestellung 12229 Stücke:
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36+0.58 EUR
53+0.4 EUR
59+0.36 EUR
100+0.31 EUR
250+0.29 EUR
500+0.27 EUR
1000+0.26 EUR
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