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DF2S7MSL,L3F DF2S7MSL,L3F Toshiba Semiconductor and Storage DF2S7MSL_datasheet_en_20151203.pdf?did=30716&prodName=DF2S7MSL Description: TVS DIODE 5VWM 20VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 60W
Power Line Protection: No
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
10000+0.086 EUR
Mindestbestellmenge: 10000
DF3D18FU,LF DF3D18FU,LF Toshiba Semiconductor and Storage docget.jsp?did=29958&prodName=DF3D18FU Description: TVS DIODE 12VWM 33VC USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Capacitance @ Frequency: 9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: USM
Bidirectional Channels: 2
Voltage - Breakdown (Min): 16.2V
Voltage - Clamping (Max) @ Ipp: 33V
Power - Peak Pulse: 80W
Power Line Protection: No
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.27 EUR
6000+ 0.26 EUR
Mindestbestellmenge: 3000
DF3D29FU,LF DF3D29FU,LF Toshiba Semiconductor and Storage docget.jsp?did=29931&prodName=DF3D29FU Description: TVS DIODE 24VWM 47VC
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
DF6F6.8MTU,LF DF6F6.8MTU,LF Toshiba Semiconductor and Storage docget.jsp?did=14257&prodName=DF6F6.8MTU Description: TVS DIODE 5VWM 24VC UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Applications: General Purpose
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: UF6
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 24V
Power Line Protection: Yes
Produkt ist nicht verfügbar
SSM3J338R,LF SSM3J338R,LF Toshiba Semiconductor and Storage SSM3J338R_datasheet_en_20210916.pdf?did=30384&prodName=SSM3J338R Description: MOSFET P-CH 12V 6A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 17.6mOhm @ 6A, 8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V
auf Bestellung 372000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.23 EUR
6000+ 0.22 EUR
9000+ 0.2 EUR
30000+ 0.19 EUR
75000+ 0.18 EUR
Mindestbestellmenge: 3000
SSM3J356R,LF SSM3J356R,LF Toshiba Semiconductor and Storage SSM3J356R_datasheet_en_20230705.pdf?did=30685&prodName=SSM3J356R Description: MOSFET P-CH 60V 2A SOT-23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V
auf Bestellung 342000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.21 EUR
6000+ 0.2 EUR
9000+ 0.18 EUR
75000+ 0.15 EUR
Mindestbestellmenge: 3000
SSM3K56ACT,L3F SSM3K56ACT,L3F Toshiba Semiconductor and Storage SSM3K56ACT_datasheet_en_20221125.pdf?did=30688&prodName=SSM3K56ACT Description: MOSFET N-CH 20V 1.4A CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 10 V
auf Bestellung 180000 Stücke:
Lieferzeit 21-28 Tag (e)
10000+0.18 EUR
30000+ 0.17 EUR
50000+ 0.15 EUR
Mindestbestellmenge: 10000
SSM3K56MFV,L3F SSM3K56MFV,L3F Toshiba Semiconductor and Storage docget.jsp?did=13823&prodName=SSM3K56MFV Description: MOSFET N-CH 20V 800MA VESM
auf Bestellung 40000 Stücke:
Lieferzeit 21-28 Tag (e)
SSM3K72CTC,L3F SSM3K72CTC,L3F Toshiba Semiconductor and Storage SSM3K72CTC_datasheet_en_20171204.pdf?did=30370&prodName=SSM3K72CTC Description: MOSFET N-CH 60V 150MA CST3C
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: CST3C
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
10000+0.1 EUR
Mindestbestellmenge: 10000
SSM6J512NU,LF SSM6J512NU,LF Toshiba Semiconductor and Storage SSM6J512NU_datasheet_en_20210917.pdf?did=30386&prodName=SSM6J512NU Description: MOSFET P-CH 12V 10A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 4A, 8V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V
auf Bestellung 24000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.3 EUR
6000+ 0.29 EUR
9000+ 0.26 EUR
Mindestbestellmenge: 3000
SSM6K504NU,LF SSM6K504NU,LF Toshiba Semiconductor and Storage docget.jsp?did=13720&prodName=SSM6K504NU Description: MOSFET N-CH 30V 9A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 15 V
Produkt ist nicht verfügbar
SSM6N7002KFU,LF SSM6N7002KFU,LF Toshiba Semiconductor and Storage SSM6N7002KFU.pdf Description: MOSFET 2N-CH 60V 0.3A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 285mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 300mA
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: US6
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
3000+0.096 EUR
Mindestbestellmenge: 3000
1SS302A,LF 1SS302A,LF Toshiba Semiconductor and Storage Description: DIODE ARRAY GP 80V 100MA SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-70
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 8080 Stücke:
Lieferzeit 21-28 Tag (e)
53+0.49 EUR
75+ 0.35 EUR
153+ 0.17 EUR
500+ 0.14 EUR
1000+ 0.099 EUR
Mindestbestellmenge: 53
1SS307E,L3F 1SS307E,L3F Toshiba Semiconductor and Storage 1SS307E_datasheet_en_20181116.pdf?did=28816&prodName=1SS307E Description: DIODE GEN PURP 80V 100MA SC79
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 6pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SC-79
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 nA @ 80 V
auf Bestellung 85130 Stücke:
Lieferzeit 21-28 Tag (e)
56+0.47 EUR
81+ 0.32 EUR
150+ 0.17 EUR
500+ 0.14 EUR
1000+ 0.095 EUR
2000+ 0.078 EUR
Mindestbestellmenge: 56
1SS413CT,L3F 1SS413CT,L3F Toshiba Semiconductor and Storage 1SS413CT_datasheet_en_20140311.pdf?did=14990&prodName=1SS413CT Description: DIODE SCHOTTKY 20V 50MA SOD882
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 3.9pF @ 0V, 1MHz
Current - Average Rectified (Io): 50mA
Supplier Device Package: CST2
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
auf Bestellung 44880 Stücke:
Lieferzeit 21-28 Tag (e)
38+0.7 EUR
55+ 0.48 EUR
111+ 0.23 EUR
500+ 0.2 EUR
1000+ 0.14 EUR
2000+ 0.12 EUR
5000+ 0.11 EUR
Mindestbestellmenge: 38
DF2B18FU,H3F DF2B18FU,H3F Toshiba Semiconductor and Storage DF2B18FU_datasheet_en_20210625.pdf?did=29926&prodName=DF2B18FU Description: TVS DIODE 12VWM 33VC USC
auf Bestellung 1832 Stücke:
Lieferzeit 21-28 Tag (e)
29+0.91 EUR
40+ 0.67 EUR
100+ 0.38 EUR
500+ 0.25 EUR
1000+ 0.19 EUR
Mindestbestellmenge: 29
DF2B29FU,H3F DF2B29FU,H3F Toshiba Semiconductor and Storage docget.jsp?did=29929&prodName=DF2B29FU Description: TVS DIODE 24VWM 47VC USC
auf Bestellung 27850 Stücke:
Lieferzeit 21-28 Tag (e)
29+0.91 EUR
40+ 0.67 EUR
100+ 0.38 EUR
500+ 0.25 EUR
1000+ 0.19 EUR
Mindestbestellmenge: 29
DF2S10FS,L3M DF2S10FS,L3M Toshiba Semiconductor and Storage docget.jsp?did=11162&prodName=DF2S10FS Description: TVS DIODE 8V FSC
auf Bestellung 11520 Stücke:
Lieferzeit 21-28 Tag (e)
DF2S12FS,L3M DF2S12FS,L3M Toshiba Semiconductor and Storage DF2S12FS_datasheet_en_20211216.pdf?did=22221&prodName=DF2S12FS Description: TVS DIODE 9VWM 18.5VC SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 15pF @ 1MHz
Voltage - Reverse Standoff (Typ): 9V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 18.5V
Power Line Protection: No
auf Bestellung 15447 Stücke:
Lieferzeit 21-28 Tag (e)
63+0.42 EUR
87+ 0.3 EUR
163+ 0.16 EUR
500+ 0.13 EUR
1000+ 0.087 EUR
2000+ 0.072 EUR
5000+ 0.068 EUR
Mindestbestellmenge: 63
DF2S16FS,L3M DF2S16FS,L3M Toshiba Semiconductor and Storage DF2S16FS_datasheet_en_20211216.pdf?did=4411&prodName=DF2S16FS Description: TVS DIODE 12VWM SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 10pF @ 1MHz
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.3V
Power Line Protection: No
auf Bestellung 102267 Stücke:
Lieferzeit 21-28 Tag (e)
63+0.42 EUR
87+ 0.3 EUR
163+ 0.16 EUR
500+ 0.13 EUR
1000+ 0.087 EUR
2000+ 0.072 EUR
5000+ 0.068 EUR
Mindestbestellmenge: 63
DF2S20CT,L3F DF2S20CT,L3F Toshiba Semiconductor and Storage docget.jsp?did=893&prodName=DF2S20CT Description: TVS DIODE 15VWM CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 9pF @ 1MHz
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.8V
Power Line Protection: No
Part Status: Active
auf Bestellung 14264 Stücke:
Lieferzeit 21-28 Tag (e)
56+0.47 EUR
61+ 0.43 EUR
112+ 0.23 EUR
500+ 0.14 EUR
1000+ 0.098 EUR
2000+ 0.083 EUR
5000+ 0.075 EUR
Mindestbestellmenge: 56
DF2S20FS,L3M DF2S20FS,L3M Toshiba Semiconductor and Storage DF2S20FS_DS_20140723.pdf Description: TVS DIODE 15VWM SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 9pF @ 1MHz
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.8V
Power Line Protection: No
auf Bestellung 13471 Stücke:
Lieferzeit 21-28 Tag (e)
63+0.42 EUR
87+ 0.3 EUR
163+ 0.16 EUR
500+ 0.13 EUR
1000+ 0.087 EUR
2000+ 0.072 EUR
5000+ 0.068 EUR
Mindestbestellmenge: 63
DF2S24FS,L3M DF2S24FS,L3M Toshiba Semiconductor and Storage DF2S24FS_datasheet_en_20211216.pdf?did=4413&prodName=DF2S24FS Description: TVS DIODE 19VWM SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 8.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 19V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Power Line Protection: No
auf Bestellung 54236 Stücke:
Lieferzeit 21-28 Tag (e)
63+0.42 EUR
87+ 0.3 EUR
163+ 0.16 EUR
500+ 0.13 EUR
1000+ 0.087 EUR
2000+ 0.072 EUR
5000+ 0.068 EUR
Mindestbestellmenge: 63
DF2S30CT,L3F DF2S30CT,L3F Toshiba Semiconductor and Storage DF2S30CT_datasheet_en_20140415.pdf?did=895&prodName=DF2S30CT Description: TVS DIODE 23VWM CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 7.2pF @ 1MHz
Voltage - Reverse Standoff (Typ): 23V
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Power Line Protection: No
Part Status: Active
auf Bestellung 9010 Stücke:
Lieferzeit 21-28 Tag (e)
56+0.47 EUR
61+ 0.43 EUR
112+ 0.23 EUR
500+ 0.14 EUR
1000+ 0.098 EUR
2000+ 0.083 EUR
5000+ 0.075 EUR
Mindestbestellmenge: 56
DF2S30FS,L3M DF2S30FS,L3M Toshiba Semiconductor and Storage Description: TVS DIODE 23VWM SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 7pF @ 1MHz
Voltage - Reverse Standoff (Typ): 23V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Power Line Protection: No
auf Bestellung 64914 Stücke:
Lieferzeit 21-28 Tag (e)
63+0.42 EUR
87+ 0.3 EUR
163+ 0.16 EUR
500+ 0.13 EUR
1000+ 0.087 EUR
2000+ 0.072 EUR
5000+ 0.068 EUR
Mindestbestellmenge: 63
DF2S5.1FS,L3M DF2S5.1FS,L3M Toshiba Semiconductor and Storage DF2S5.1FS_datasheet_en_20211207.pdf?did=14164&prodName=DF2S5.1FS Description: TVS DIODE 1.5VWM SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Voltage - Reverse Standoff (Typ): 1.5V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4.8V
Power Line Protection: No
auf Bestellung 34624 Stücke:
Lieferzeit 21-28 Tag (e)
63+0.42 EUR
87+ 0.3 EUR
163+ 0.16 EUR
500+ 0.13 EUR
1000+ 0.087 EUR
2000+ 0.072 EUR
5000+ 0.068 EUR
Mindestbestellmenge: 63
DF2S5.6FS,L3M DF2S5.6FS,L3M Toshiba Semiconductor and Storage DF2S5.6FS_datasheet_en_20211216.pdf?did=22216&prodName=DF2S5.6FS Description: TVS DIODE 3.5VWM SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 40pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Power Line Protection: No
auf Bestellung 170765 Stücke:
Lieferzeit 21-28 Tag (e)
63+0.42 EUR
87+ 0.3 EUR
163+ 0.16 EUR
500+ 0.13 EUR
1000+ 0.087 EUR
2000+ 0.072 EUR
5000+ 0.068 EUR
Mindestbestellmenge: 63
DF2S6.2CT,L3F DF2S6.2CT,L3F Toshiba Semiconductor and Storage DF2S6.2CT_datasheet_en_20140415.pdf?did=22045&prodName=DF2S6.2CT Description: TVS DIODE 5VWM CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 32pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Part Status: Active
auf Bestellung 106051 Stücke:
Lieferzeit 21-28 Tag (e)
56+0.47 EUR
80+ 0.32 EUR
149+ 0.17 EUR
500+ 0.14 EUR
1000+ 0.095 EUR
2000+ 0.079 EUR
5000+ 0.075 EUR
Mindestbestellmenge: 56
DF2S7MSL,L3F DF2S7MSL,L3F Toshiba Semiconductor and Storage DF2S7MSL_datasheet_en_20151203.pdf?did=30716&prodName=DF2S7MSL Description: TVS DIODE 5VWM 20VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 60W
Power Line Protection: No
auf Bestellung 20813 Stücke:
Lieferzeit 21-28 Tag (e)
39+0.68 EUR
58+ 0.46 EUR
118+ 0.22 EUR
500+ 0.18 EUR
1000+ 0.13 EUR
2000+ 0.11 EUR
5000+ 0.1 EUR
Mindestbestellmenge: 39
DF3D18FU,LF DF3D18FU,LF Toshiba Semiconductor and Storage docget.jsp?did=29958&prodName=DF3D18FU Description: TVS DIODE 12VWM 33VC USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Capacitance @ Frequency: 9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: USM
Bidirectional Channels: 2
Voltage - Breakdown (Min): 16.2V
Voltage - Clamping (Max) @ Ipp: 33V
Power - Peak Pulse: 80W
Power Line Protection: No
auf Bestellung 8931 Stücke:
Lieferzeit 21-28 Tag (e)
26+1.01 EUR
32+ 0.81 EUR
100+ 0.55 EUR
500+ 0.42 EUR
1000+ 0.31 EUR
Mindestbestellmenge: 26
DF3D29FU,LF DF3D29FU,LF Toshiba Semiconductor and Storage docget.jsp?did=29931&prodName=DF3D29FU Description: TVS DIODE 24VWM 47VC
auf Bestellung 5914 Stücke:
Lieferzeit 21-28 Tag (e)
DF3D6.8MS,LF DF3D6.8MS,LF Toshiba Semiconductor and Storage DF3D6.8MS_datasheet_en_20141016.pdf?did=13919&prodName=DF3D6.8MS Description: TVS DIODE 5VWM 11VC SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Applications: General Purpose
Capacitance @ Frequency: 0.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SSM
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Power Line Protection: Yes
auf Bestellung 4844 Stücke:
Lieferzeit 21-28 Tag (e)
40+0.65 EUR
60+ 0.44 EUR
122+ 0.21 EUR
500+ 0.18 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 40
DF6F6.8MTU,LF DF6F6.8MTU,LF Toshiba Semiconductor and Storage docget.jsp?did=14257&prodName=DF6F6.8MTU Description: TVS DIODE 5VWM 24VC UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Applications: General Purpose
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: UF6
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 24V
Power Line Protection: Yes
Produkt ist nicht verfügbar
SSM3J338R,LF SSM3J338R,LF Toshiba Semiconductor and Storage SSM3J338R_datasheet_en_20210916.pdf?did=30384&prodName=SSM3J338R Description: MOSFET P-CH 12V 6A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 17.6mOhm @ 6A, 8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V
auf Bestellung 374581 Stücke:
Lieferzeit 21-28 Tag (e)
32+0.83 EUR
40+ 0.66 EUR
100+ 0.39 EUR
500+ 0.36 EUR
1000+ 0.25 EUR
Mindestbestellmenge: 32
SSM3J356R,LF SSM3J356R,LF Toshiba Semiconductor and Storage SSM3J356R_datasheet_en_20230705.pdf?did=30685&prodName=SSM3J356R Description: MOSFET P-CH 60V 2A SOT-23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V
auf Bestellung 344700 Stücke:
Lieferzeit 21-28 Tag (e)
28+0.94 EUR
39+ 0.67 EUR
100+ 0.34 EUR
500+ 0.3 EUR
1000+ 0.23 EUR
Mindestbestellmenge: 28
SSM3K56ACT,L3F SSM3K56ACT,L3F Toshiba Semiconductor and Storage SSM3K56ACT_datasheet_en_20221125.pdf?did=30688&prodName=SSM3K56ACT Description: MOSFET N-CH 20V 1.4A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 10 V
auf Bestellung 188668 Stücke:
Lieferzeit 21-28 Tag (e)
22+1.22 EUR
29+ 0.92 EUR
100+ 0.52 EUR
500+ 0.34 EUR
1000+ 0.26 EUR
2000+ 0.23 EUR
5000+ 0.21 EUR
Mindestbestellmenge: 22
SSM3K56MFV,L3F SSM3K56MFV,L3F Toshiba Semiconductor and Storage docget.jsp?did=13823&prodName=SSM3K56MFV Description: MOSFET N-CH 20V 800MA VESM
auf Bestellung 40760 Stücke:
Lieferzeit 21-28 Tag (e)
SSM3K72CTC,L3F SSM3K72CTC,L3F Toshiba Semiconductor and Storage SSM3K72CTC_datasheet_en_20171204.pdf?did=30370&prodName=SSM3K72CTC Description: MOSFET N-CH 60V 150MA CST3C
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: CST3C
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
auf Bestellung 10005 Stücke:
Lieferzeit 21-28 Tag (e)
34+0.78 EUR
41+ 0.64 EUR
100+ 0.34 EUR
500+ 0.23 EUR
1000+ 0.15 EUR
2000+ 0.14 EUR
5000+ 0.12 EUR
Mindestbestellmenge: 34
SSM6J512NU,LF SSM6J512NU,LF Toshiba Semiconductor and Storage SSM6J512NU_datasheet_en_20210917.pdf?did=30386&prodName=SSM6J512NU Description: MOSFET P-CH 12V 10A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 4A, 8V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V
auf Bestellung 26896 Stücke:
Lieferzeit 21-28 Tag (e)
24+1.09 EUR
31+ 0.86 EUR
100+ 0.52 EUR
500+ 0.48 EUR
1000+ 0.33 EUR
Mindestbestellmenge: 24
SSM6K504NU,LF SSM6K504NU,LF Toshiba Semiconductor and Storage docget.jsp?did=13720&prodName=SSM6K504NU Description: MOSFET N-CH 30V 9A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 15 V
auf Bestellung 4160 Stücke:
Lieferzeit 21-28 Tag (e)
28+0.94 EUR
35+ 0.75 EUR
100+ 0.51 EUR
500+ 0.38 EUR
1000+ 0.29 EUR
Mindestbestellmenge: 28
SSM6N7002KFU,LF SSM6N7002KFU,LF Toshiba Semiconductor and Storage SSM6N7002KFU.pdf Description: MOSFET 2N-CH 60V 0.3A US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 285mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 300mA
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: US6
Part Status: Active
auf Bestellung 3570 Stücke:
Lieferzeit 21-28 Tag (e)
46+0.57 EUR
67+ 0.39 EUR
136+ 0.19 EUR
500+ 0.16 EUR
1000+ 0.11 EUR
Mindestbestellmenge: 46
DF3D29FU,LF DF3D29FU,LF Toshiba Semiconductor and Storage docget.jsp?did=29931&prodName=DF3D29FU Description: TVS DIODE 24VWM 47VC
auf Bestellung 5914 Stücke:
Lieferzeit 21-28 Tag (e)
TLP3906(TPL,E TLP3906(TPL,E Toshiba Semiconductor and Storage Description: OPTOISO 3.75KV PHVOLT SO6
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 12µA
Voltage - Isolation: 3750Vrms
Supplier Device Package: 6-SOP
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 200µs, 300µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
Produkt ist nicht verfügbar
TLP3906(TPL,E TLP3906(TPL,E Toshiba Semiconductor and Storage Description: OPTOISO 3.75KV PHVOLT SO6
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 12µA
Voltage - Isolation: 3750Vrms
Supplier Device Package: 6-SOP
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 200µs, 300µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
Produkt ist nicht verfügbar
TPH1R204PL,L1Q TPH1R204PL,L1Q Toshiba Semiconductor and Storage TPH1R204PL_datasheet_en_20191018.pdf?did=30431&prodName=TPH1R204PL Description: MOSFET N-CH 40V 150A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.24mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 20 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
5000+1.39 EUR
Mindestbestellmenge: 5000
TPH1R005PL,L1Q TPH1R005PL,L1Q Toshiba Semiconductor and Storage docget.jsp?did=15643&prodName=TPH1R005PL Description: MOSFET N-CH 45V 150A 8SOP
Produkt ist nicht verfügbar
TPH1R204PL,L1Q TPH1R204PL,L1Q Toshiba Semiconductor and Storage TPH1R204PL_datasheet_en_20191018.pdf?did=30431&prodName=TPH1R204PL Description: MOSFET N-CH 40V 150A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.24mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 20 V
auf Bestellung 6931 Stücke:
Lieferzeit 21-28 Tag (e)
8+3.54 EUR
10+ 2.89 EUR
100+ 2.25 EUR
500+ 1.91 EUR
1000+ 1.55 EUR
2000+ 1.46 EUR
Mindestbestellmenge: 8
TPH1R005PL,L1Q TPH1R005PL,L1Q Toshiba Semiconductor and Storage docget.jsp?did=15643&prodName=TPH1R005PL Description: MOSFET N-CH 45V 150A 8SOP
Produkt ist nicht verfügbar
74LCX157FT(AJ) 74LCX157FT(AJ) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=74LCX157FT Description: IC MULTIPLEXER QUAD 2-CH 16TSSOP
Produkt ist nicht verfügbar
74VHC393FT 74VHC393FT Toshiba Semiconductor and Storage Description: IC BIN COUNTER DL 4BIT 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 125°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 14-TSSOP
Part Status: Active
Voltage - Supply: 2 V ~ 5.5 V
Count Rate: 115 MHz
Number of Bits per Element: 4
auf Bestellung 27500 Stücke:
Lieferzeit 21-28 Tag (e)
2500+0.3 EUR
5000+ 0.28 EUR
12500+ 0.26 EUR
25000+ 0.24 EUR
Mindestbestellmenge: 2500
TLP7920(F TLP7920(F Toshiba Semiconductor and Storage TLP7920_datasheet_en_20160523.pdf?did=30395&prodName=TLP7920 Description: IC OPAMP ISOLATION 1 CIRC 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Differential
Mounting Type: Through Hole
Amplifier Type: Isolation
Operating Temperature: -40°C ~ 105°C
Current - Supply: 12mA
Current - Input Bias: 55 nA
Voltage - Input Offset: 730 µV
Supplier Device Package: 8-DIP
Part Status: Active
Number of Circuits: 1
-3db Bandwidth: 230 kHz
Voltage - Supply Span (Min): 4.5 V
Voltage - Supply Span (Max): 5.5 V
Produkt ist nicht verfügbar
TLP7820(TP4,E TLP7820(TP4,E Toshiba Semiconductor and Storage TLP7820_datasheet_en_20200625.pdf?did=29901&prodName=TLP7820 Description: IC OPAMP ISOLATION 1 CIRCUIT 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Output Type: Differential
Mounting Type: Surface Mount
Amplifier Type: Isolation
Operating Temperature: -40°C ~ 105°C
Current - Supply: 12mA
Current - Input Bias: 5.5 nA
Voltage - Input Offset: 900 µV
Supplier Device Package: 8-SO
Part Status: Active
Number of Circuits: 1
-3db Bandwidth: 230 kHz
Voltage - Supply Span (Min): 4.5 V
Voltage - Supply Span (Max): 5.5 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
1500+6.87 EUR
3000+ 6.59 EUR
Mindestbestellmenge: 1500
TLP7820(TP4,E TLP7820(TP4,E Toshiba Semiconductor and Storage TLP7820_datasheet_en_20200625.pdf?did=29901&prodName=TLP7820 Description: IC OPAMP ISOLATION 1 CIRCUIT 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Output Type: Differential
Mounting Type: Surface Mount
Amplifier Type: Isolation
Operating Temperature: -40°C ~ 105°C
Current - Supply: 12mA
Current - Input Bias: 5.5 nA
Voltage - Input Offset: 900 µV
Supplier Device Package: 8-SO
Part Status: Active
Number of Circuits: 1
-3db Bandwidth: 230 kHz
Voltage - Supply Span (Min): 4.5 V
Voltage - Supply Span (Max): 5.5 V
auf Bestellung 5171 Stücke:
Lieferzeit 21-28 Tag (e)
2+15.34 EUR
10+ 10.85 EUR
100+ 8.88 EUR
500+ 7.49 EUR
Mindestbestellmenge: 2
TB67B000HG TB67B000HG Toshiba Semiconductor and Storage docget.jsp?did=14106&prodName=TB67B000HG Description: IC MOTOR DRVR 13.5V-16.5V 30HDIP
auf Bestellung 4 Stücke:
Lieferzeit 21-28 Tag (e)
TLP2745(TP,E TLP2745(TP,E Toshiba Semiconductor and Storage Description: OPTOISO 5KV PUSH PULL SO6L
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 3ns, 3ns
Common Mode Transient Immunity (Min): 30kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
auf Bestellung 10500 Stücke:
Lieferzeit 21-28 Tag (e)
1500+0.92 EUR
3000+ 0.87 EUR
7500+ 0.85 EUR
10500+ 0.83 EUR
Mindestbestellmenge: 1500
TLP2748(TP,E TLP2748(TP,E Toshiba Semiconductor and Storage Description: OPTOISO 5KV PUSH PULL SO6L
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 3ns, 3ns
Common Mode Transient Immunity (Min): 30kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Number of Channels: 1
Current - Output / Channel: 50 mA
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
1500+0.95 EUR
3000+ 0.9 EUR
Mindestbestellmenge: 1500
TLP2745(TP,E TLP2745(TP,E Toshiba Semiconductor and Storage Description: OPTOISO 5KV PUSH PULL SO6L
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 3ns, 3ns
Common Mode Transient Immunity (Min): 30kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
auf Bestellung 12251 Stücke:
Lieferzeit 21-28 Tag (e)
10+2.6 EUR
16+ 1.64 EUR
100+ 1.22 EUR
500+ 1.12 EUR
Mindestbestellmenge: 10
TLP2748(TP,E TLP2748(TP,E Toshiba Semiconductor and Storage Description: OPTOISO 5KV PUSH PULL SO6L
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 3ns, 3ns
Common Mode Transient Immunity (Min): 30kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Number of Channels: 1
Current - Output / Channel: 50 mA
auf Bestellung 6099 Stücke:
Lieferzeit 21-28 Tag (e)
10+2.68 EUR
16+ 1.69 EUR
100+ 1.25 EUR
500+ 1.15 EUR
Mindestbestellmenge: 10
74HC164D 74HC164D Toshiba Semiconductor and Storage 74HC164D_datasheet_en_20160707.pdf?did=36767&prodName=74HC164D description Description: IC SHIFT REGISTER 8BIT 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 14-SOP
Part Status: Active
Number of Bits per Element: 8
auf Bestellung 38726 Stücke:
Lieferzeit 21-28 Tag (e)
25+1.07 EUR
29+ 0.91 EUR
31+ 0.85 EUR
100+ 0.68 EUR
250+ 0.63 EUR
500+ 0.53 EUR
1000+ 0.41 EUR
Mindestbestellmenge: 25
74HC86D 74HC86D Toshiba Semiconductor and Storage 74HC86D_datasheet_en_20160804.pdf?did=36769&prodName=74HC86D description Description: IC GATE XOR 4CH 2-INP 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
auf Bestellung 17519 Stücke:
Lieferzeit 21-28 Tag (e)
25+1.07 EUR
29+ 0.91 EUR
31+ 0.85 EUR
100+ 0.68 EUR
250+ 0.63 EUR
500+ 0.53 EUR
1000+ 0.41 EUR
Mindestbestellmenge: 25
DF2S7MSL,L3F DF2S7MSL_datasheet_en_20151203.pdf?did=30716&prodName=DF2S7MSL
DF2S7MSL,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 20VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 60W
Power Line Protection: No
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10000+0.086 EUR
Mindestbestellmenge: 10000
DF3D18FU,LF docget.jsp?did=29958&prodName=DF3D18FU
DF3D18FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 12VWM 33VC USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Capacitance @ Frequency: 9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: USM
Bidirectional Channels: 2
Voltage - Breakdown (Min): 16.2V
Voltage - Clamping (Max) @ Ipp: 33V
Power - Peak Pulse: 80W
Power Line Protection: No
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.27 EUR
6000+ 0.26 EUR
Mindestbestellmenge: 3000
DF3D29FU,LF docget.jsp?did=29931&prodName=DF3D29FU
DF3D29FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 24VWM 47VC
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
DF6F6.8MTU,LF docget.jsp?did=14257&prodName=DF6F6.8MTU
DF6F6.8MTU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 24VC UF6
Packaging: Tape & Reel (TR)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Applications: General Purpose
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: UF6
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 24V
Power Line Protection: Yes
Produkt ist nicht verfügbar
SSM3J338R,LF SSM3J338R_datasheet_en_20210916.pdf?did=30384&prodName=SSM3J338R
SSM3J338R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 12V 6A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 17.6mOhm @ 6A, 8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V
auf Bestellung 372000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.23 EUR
6000+ 0.22 EUR
9000+ 0.2 EUR
30000+ 0.19 EUR
75000+ 0.18 EUR
Mindestbestellmenge: 3000
SSM3J356R,LF SSM3J356R_datasheet_en_20230705.pdf?did=30685&prodName=SSM3J356R
SSM3J356R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 2A SOT-23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V
auf Bestellung 342000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.21 EUR
6000+ 0.2 EUR
9000+ 0.18 EUR
75000+ 0.15 EUR
Mindestbestellmenge: 3000
SSM3K56ACT,L3F SSM3K56ACT_datasheet_en_20221125.pdf?did=30688&prodName=SSM3K56ACT
SSM3K56ACT,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 1.4A CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 10 V
auf Bestellung 180000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10000+0.18 EUR
30000+ 0.17 EUR
50000+ 0.15 EUR
Mindestbestellmenge: 10000
SSM3K56MFV,L3F docget.jsp?did=13823&prodName=SSM3K56MFV
SSM3K56MFV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 800MA VESM
auf Bestellung 40000 Stücke:
Lieferzeit 21-28 Tag (e)
SSM3K72CTC,L3F SSM3K72CTC_datasheet_en_20171204.pdf?did=30370&prodName=SSM3K72CTC
SSM3K72CTC,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 150MA CST3C
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: CST3C
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10000+0.1 EUR
Mindestbestellmenge: 10000
SSM6J512NU,LF SSM6J512NU_datasheet_en_20210917.pdf?did=30386&prodName=SSM6J512NU
SSM6J512NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 12V 10A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 4A, 8V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V
auf Bestellung 24000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.3 EUR
6000+ 0.29 EUR
9000+ 0.26 EUR
Mindestbestellmenge: 3000
SSM6K504NU,LF docget.jsp?did=13720&prodName=SSM6K504NU
SSM6K504NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 9A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 15 V
Produkt ist nicht verfügbar
SSM6N7002KFU,LF SSM6N7002KFU.pdf
SSM6N7002KFU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 60V 0.3A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 285mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 300mA
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: US6
Part Status: Active
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
3000+0.096 EUR
Mindestbestellmenge: 3000
1SS302A,LF
1SS302A,LF
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SC-70
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 8080 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
53+0.49 EUR
75+ 0.35 EUR
153+ 0.17 EUR
500+ 0.14 EUR
1000+ 0.099 EUR
Mindestbestellmenge: 53
1SS307E,L3F 1SS307E_datasheet_en_20181116.pdf?did=28816&prodName=1SS307E
1SS307E,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE GEN PURP 80V 100MA SC79
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 6pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SC-79
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 100 mA
Current - Reverse Leakage @ Vr: 10 nA @ 80 V
auf Bestellung 85130 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
56+0.47 EUR
81+ 0.32 EUR
150+ 0.17 EUR
500+ 0.14 EUR
1000+ 0.095 EUR
2000+ 0.078 EUR
Mindestbestellmenge: 56
1SS413CT,L3F 1SS413CT_datasheet_en_20140311.pdf?did=14990&prodName=1SS413CT
1SS413CT,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 20V 50MA SOD882
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 3.9pF @ 0V, 1MHz
Current - Average Rectified (Io): 50mA
Supplier Device Package: CST2
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 50 mA
Current - Reverse Leakage @ Vr: 500 nA @ 20 V
auf Bestellung 44880 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
38+0.7 EUR
55+ 0.48 EUR
111+ 0.23 EUR
500+ 0.2 EUR
1000+ 0.14 EUR
2000+ 0.12 EUR
5000+ 0.11 EUR
Mindestbestellmenge: 38
DF2B18FU,H3F DF2B18FU_datasheet_en_20210625.pdf?did=29926&prodName=DF2B18FU
DF2B18FU,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 12VWM 33VC USC
auf Bestellung 1832 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
29+0.91 EUR
40+ 0.67 EUR
100+ 0.38 EUR
500+ 0.25 EUR
1000+ 0.19 EUR
Mindestbestellmenge: 29
DF2B29FU,H3F docget.jsp?did=29929&prodName=DF2B29FU
DF2B29FU,H3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 24VWM 47VC USC
auf Bestellung 27850 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
29+0.91 EUR
40+ 0.67 EUR
100+ 0.38 EUR
500+ 0.25 EUR
1000+ 0.19 EUR
Mindestbestellmenge: 29
DF2S10FS,L3M docget.jsp?did=11162&prodName=DF2S10FS
DF2S10FS,L3M
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 8V FSC
auf Bestellung 11520 Stücke:
Lieferzeit 21-28 Tag (e)
DF2S12FS,L3M DF2S12FS_datasheet_en_20211216.pdf?did=22221&prodName=DF2S12FS
DF2S12FS,L3M
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 9VWM 18.5VC SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 15pF @ 1MHz
Voltage - Reverse Standoff (Typ): 9V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 11.4V
Voltage - Clamping (Max) @ Ipp: 18.5V
Power Line Protection: No
auf Bestellung 15447 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
63+0.42 EUR
87+ 0.3 EUR
163+ 0.16 EUR
500+ 0.13 EUR
1000+ 0.087 EUR
2000+ 0.072 EUR
5000+ 0.068 EUR
Mindestbestellmenge: 63
DF2S16FS,L3M DF2S16FS_datasheet_en_20211216.pdf?did=4411&prodName=DF2S16FS
DF2S16FS,L3M
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 12VWM SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 10pF @ 1MHz
Voltage - Reverse Standoff (Typ): 12V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 15.3V
Power Line Protection: No
auf Bestellung 102267 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
63+0.42 EUR
87+ 0.3 EUR
163+ 0.16 EUR
500+ 0.13 EUR
1000+ 0.087 EUR
2000+ 0.072 EUR
5000+ 0.068 EUR
Mindestbestellmenge: 63
DF2S20CT,L3F docget.jsp?did=893&prodName=DF2S20CT
DF2S20CT,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 15VWM CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 9pF @ 1MHz
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.8V
Power Line Protection: No
Part Status: Active
auf Bestellung 14264 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
56+0.47 EUR
61+ 0.43 EUR
112+ 0.23 EUR
500+ 0.14 EUR
1000+ 0.098 EUR
2000+ 0.083 EUR
5000+ 0.075 EUR
Mindestbestellmenge: 56
DF2S20FS,L3M DF2S20FS_DS_20140723.pdf
DF2S20FS,L3M
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 15VWM SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 9pF @ 1MHz
Voltage - Reverse Standoff (Typ): 15V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 18.8V
Power Line Protection: No
auf Bestellung 13471 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
63+0.42 EUR
87+ 0.3 EUR
163+ 0.16 EUR
500+ 0.13 EUR
1000+ 0.087 EUR
2000+ 0.072 EUR
5000+ 0.068 EUR
Mindestbestellmenge: 63
DF2S24FS,L3M DF2S24FS_datasheet_en_20211216.pdf?did=4413&prodName=DF2S24FS
DF2S24FS,L3M
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 19VWM SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 8.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 19V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 22.8V
Power Line Protection: No
auf Bestellung 54236 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
63+0.42 EUR
87+ 0.3 EUR
163+ 0.16 EUR
500+ 0.13 EUR
1000+ 0.087 EUR
2000+ 0.072 EUR
5000+ 0.068 EUR
Mindestbestellmenge: 63
DF2S30CT,L3F DF2S30CT_datasheet_en_20140415.pdf?did=895&prodName=DF2S30CT
DF2S30CT,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 23VWM CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 7.2pF @ 1MHz
Voltage - Reverse Standoff (Typ): 23V
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Power Line Protection: No
Part Status: Active
auf Bestellung 9010 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
56+0.47 EUR
61+ 0.43 EUR
112+ 0.23 EUR
500+ 0.14 EUR
1000+ 0.098 EUR
2000+ 0.083 EUR
5000+ 0.075 EUR
Mindestbestellmenge: 56
DF2S30FS,L3M
DF2S30FS,L3M
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 23VWM SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 7pF @ 1MHz
Voltage - Reverse Standoff (Typ): 23V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28V
Power Line Protection: No
auf Bestellung 64914 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
63+0.42 EUR
87+ 0.3 EUR
163+ 0.16 EUR
500+ 0.13 EUR
1000+ 0.087 EUR
2000+ 0.072 EUR
5000+ 0.068 EUR
Mindestbestellmenge: 63
DF2S5.1FS,L3M DF2S5.1FS_datasheet_en_20211207.pdf?did=14164&prodName=DF2S5.1FS
DF2S5.1FS,L3M
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 1.5VWM SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Voltage - Reverse Standoff (Typ): 1.5V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4.8V
Power Line Protection: No
auf Bestellung 34624 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
63+0.42 EUR
87+ 0.3 EUR
163+ 0.16 EUR
500+ 0.13 EUR
1000+ 0.087 EUR
2000+ 0.072 EUR
5000+ 0.068 EUR
Mindestbestellmenge: 63
DF2S5.6FS,L3M DF2S5.6FS_datasheet_en_20211216.pdf?did=22216&prodName=DF2S5.6FS
DF2S5.6FS,L3M
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.5VWM SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 40pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Power Line Protection: No
auf Bestellung 170765 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
63+0.42 EUR
87+ 0.3 EUR
163+ 0.16 EUR
500+ 0.13 EUR
1000+ 0.087 EUR
2000+ 0.072 EUR
5000+ 0.068 EUR
Mindestbestellmenge: 63
DF2S6.2CT,L3F DF2S6.2CT_datasheet_en_20140415.pdf?did=22045&prodName=DF2S6.2CT
DF2S6.2CT,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM CST2
Packaging: Cut Tape (CT)
Package / Case: SOD-882
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 32pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V
Supplier Device Package: CST2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Part Status: Active
auf Bestellung 106051 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
56+0.47 EUR
80+ 0.32 EUR
149+ 0.17 EUR
500+ 0.14 EUR
1000+ 0.095 EUR
2000+ 0.079 EUR
5000+ 0.075 EUR
Mindestbestellmenge: 56
DF2S7MSL,L3F DF2S7MSL_datasheet_en_20151203.pdf?did=30716&prodName=DF2S7MSL
DF2S7MSL,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 20VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 60W
Power Line Protection: No
auf Bestellung 20813 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
39+0.68 EUR
58+ 0.46 EUR
118+ 0.22 EUR
500+ 0.18 EUR
1000+ 0.13 EUR
2000+ 0.11 EUR
5000+ 0.1 EUR
Mindestbestellmenge: 39
DF3D18FU,LF docget.jsp?did=29958&prodName=DF3D18FU
DF3D18FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 12VWM 33VC USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Type: Zener
Capacitance @ Frequency: 9pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: USM
Bidirectional Channels: 2
Voltage - Breakdown (Min): 16.2V
Voltage - Clamping (Max) @ Ipp: 33V
Power - Peak Pulse: 80W
Power Line Protection: No
auf Bestellung 8931 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
26+1.01 EUR
32+ 0.81 EUR
100+ 0.55 EUR
500+ 0.42 EUR
1000+ 0.31 EUR
Mindestbestellmenge: 26
DF3D29FU,LF docget.jsp?did=29931&prodName=DF3D29FU
DF3D29FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 24VWM 47VC
auf Bestellung 5914 Stücke:
Lieferzeit 21-28 Tag (e)
DF3D6.8MS,LF DF3D6.8MS_datasheet_en_20141016.pdf?did=13919&prodName=DF3D6.8MS
DF3D6.8MS,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 11VC SSM
Packaging: Cut Tape (CT)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Applications: General Purpose
Capacitance @ Frequency: 0.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SSM
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 11V (Typ)
Power Line Protection: Yes
auf Bestellung 4844 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
40+0.65 EUR
60+ 0.44 EUR
122+ 0.21 EUR
500+ 0.18 EUR
1000+ 0.12 EUR
Mindestbestellmenge: 40
DF6F6.8MTU,LF docget.jsp?did=14257&prodName=DF6F6.8MTU
DF6F6.8MTU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM 24VC UF6
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Flat Leads
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Applications: General Purpose
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: UF6
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 24V
Power Line Protection: Yes
Produkt ist nicht verfügbar
SSM3J338R,LF SSM3J338R_datasheet_en_20210916.pdf?did=30384&prodName=SSM3J338R
SSM3J338R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 12V 6A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 17.6mOhm @ 6A, 8V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V
auf Bestellung 374581 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
32+0.83 EUR
40+ 0.66 EUR
100+ 0.39 EUR
500+ 0.36 EUR
1000+ 0.25 EUR
Mindestbestellmenge: 32
SSM3J356R,LF SSM3J356R_datasheet_en_20230705.pdf?did=30685&prodName=SSM3J356R
SSM3J356R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 60V 2A SOT-23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +10V, -20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 10 V
auf Bestellung 344700 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
28+0.94 EUR
39+ 0.67 EUR
100+ 0.34 EUR
500+ 0.3 EUR
1000+ 0.23 EUR
Mindestbestellmenge: 28
SSM3K56ACT,L3F SSM3K56ACT_datasheet_en_20221125.pdf?did=30688&prodName=SSM3K56ACT
SSM3K56ACT,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 1.4A CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.4A (Ta)
Rds On (Max) @ Id, Vgs: 235mOhm @ 800mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 55 pF @ 10 V
auf Bestellung 188668 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
22+1.22 EUR
29+ 0.92 EUR
100+ 0.52 EUR
500+ 0.34 EUR
1000+ 0.26 EUR
2000+ 0.23 EUR
5000+ 0.21 EUR
Mindestbestellmenge: 22
SSM3K56MFV,L3F docget.jsp?did=13823&prodName=SSM3K56MFV
SSM3K56MFV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 800MA VESM
auf Bestellung 40760 Stücke:
Lieferzeit 21-28 Tag (e)
SSM3K72CTC,L3F SSM3K72CTC_datasheet_en_20171204.pdf?did=30370&prodName=SSM3K72CTC
SSM3K72CTC,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 150MA CST3C
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: CST3C
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
auf Bestellung 10005 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
34+0.78 EUR
41+ 0.64 EUR
100+ 0.34 EUR
500+ 0.23 EUR
1000+ 0.15 EUR
2000+ 0.14 EUR
5000+ 0.12 EUR
Mindestbestellmenge: 34
SSM6J512NU,LF SSM6J512NU_datasheet_en_20210917.pdf?did=30386&prodName=SSM6J512NU
SSM6J512NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 12V 10A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 16.2mOhm @ 4A, 8V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 8V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 6 V
auf Bestellung 26896 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
24+1.09 EUR
31+ 0.86 EUR
100+ 0.52 EUR
500+ 0.48 EUR
1000+ 0.33 EUR
Mindestbestellmenge: 24
SSM6K504NU,LF docget.jsp?did=13720&prodName=SSM6K504NU
SSM6K504NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 9A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 19.5mOhm @ 4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 100µA
Supplier Device Package: 6-UDFNB (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 15 V
auf Bestellung 4160 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
28+0.94 EUR
35+ 0.75 EUR
100+ 0.51 EUR
500+ 0.38 EUR
1000+ 0.29 EUR
Mindestbestellmenge: 28
SSM6N7002KFU,LF SSM6N7002KFU.pdf
SSM6N7002KFU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 60V 0.3A US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 285mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 300mA
Input Capacitance (Ciss) (Max) @ Vds: 40pF @ 10V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.6nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: US6
Part Status: Active
auf Bestellung 3570 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
46+0.57 EUR
67+ 0.39 EUR
136+ 0.19 EUR
500+ 0.16 EUR
1000+ 0.11 EUR
Mindestbestellmenge: 46
DF3D29FU,LF docget.jsp?did=29931&prodName=DF3D29FU
DF3D29FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 24VWM 47VC
auf Bestellung 5914 Stücke:
Lieferzeit 21-28 Tag (e)
TLP3906(TPL,E
TLP3906(TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV PHVOLT SO6
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 12µA
Voltage - Isolation: 3750Vrms
Supplier Device Package: 6-SOP
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 200µs, 300µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
Produkt ist nicht verfügbar
TLP3906(TPL,E
TLP3906(TPL,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 3.75KV PHVOLT SO6
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 4 Leads
Output Type: Photovoltaic
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.65V
Input Type: DC
Current - Output / Channel: 12µA
Voltage - Isolation: 3750Vrms
Supplier Device Package: 6-SOP
Voltage - Output (Max): 7V
Turn On / Turn Off Time (Typ): 200µs, 300µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 30 mA
Produkt ist nicht verfügbar
TPH1R204PL,L1Q TPH1R204PL_datasheet_en_20191018.pdf?did=30431&prodName=TPH1R204PL
TPH1R204PL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 150A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.24mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 20 V
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
5000+1.39 EUR
Mindestbestellmenge: 5000
TPH1R005PL,L1Q docget.jsp?did=15643&prodName=TPH1R005PL
TPH1R005PL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 45V 150A 8SOP
Produkt ist nicht verfügbar
TPH1R204PL,L1Q TPH1R204PL_datasheet_en_20191018.pdf?did=30431&prodName=TPH1R204PL
TPH1R204PL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 40V 150A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 1.24mOhm @ 50A, 10V
Power Dissipation (Max): 960mW (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 500µA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7200 pF @ 20 V
auf Bestellung 6931 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
8+3.54 EUR
10+ 2.89 EUR
100+ 2.25 EUR
500+ 1.91 EUR
1000+ 1.55 EUR
2000+ 1.46 EUR
Mindestbestellmenge: 8
TPH1R005PL,L1Q docget.jsp?did=15643&prodName=TPH1R005PL
TPH1R005PL,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 45V 150A 8SOP
Produkt ist nicht verfügbar
74LCX157FT(AJ) docget.jsp?type=datasheet&lang=en&pid=74LCX157FT
74LCX157FT(AJ)
Hersteller: Toshiba Semiconductor and Storage
Description: IC MULTIPLEXER QUAD 2-CH 16TSSOP
Produkt ist nicht verfügbar
74VHC393FT
74VHC393FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BIN COUNTER DL 4BIT 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 125°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 14-TSSOP
Part Status: Active
Voltage - Supply: 2 V ~ 5.5 V
Count Rate: 115 MHz
Number of Bits per Element: 4
auf Bestellung 27500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2500+0.3 EUR
5000+ 0.28 EUR
12500+ 0.26 EUR
25000+ 0.24 EUR
Mindestbestellmenge: 2500
TLP7920(F TLP7920_datasheet_en_20160523.pdf?did=30395&prodName=TLP7920
TLP7920(F
Hersteller: Toshiba Semiconductor and Storage
Description: IC OPAMP ISOLATION 1 CIRC 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Differential
Mounting Type: Through Hole
Amplifier Type: Isolation
Operating Temperature: -40°C ~ 105°C
Current - Supply: 12mA
Current - Input Bias: 55 nA
Voltage - Input Offset: 730 µV
Supplier Device Package: 8-DIP
Part Status: Active
Number of Circuits: 1
-3db Bandwidth: 230 kHz
Voltage - Supply Span (Min): 4.5 V
Voltage - Supply Span (Max): 5.5 V
Produkt ist nicht verfügbar
TLP7820(TP4,E TLP7820_datasheet_en_20200625.pdf?did=29901&prodName=TLP7820
TLP7820(TP4,E
Hersteller: Toshiba Semiconductor and Storage
Description: IC OPAMP ISOLATION 1 CIRCUIT 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Output Type: Differential
Mounting Type: Surface Mount
Amplifier Type: Isolation
Operating Temperature: -40°C ~ 105°C
Current - Supply: 12mA
Current - Input Bias: 5.5 nA
Voltage - Input Offset: 900 µV
Supplier Device Package: 8-SO
Part Status: Active
Number of Circuits: 1
-3db Bandwidth: 230 kHz
Voltage - Supply Span (Min): 4.5 V
Voltage - Supply Span (Max): 5.5 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1500+6.87 EUR
3000+ 6.59 EUR
Mindestbestellmenge: 1500
TLP7820(TP4,E TLP7820_datasheet_en_20200625.pdf?did=29901&prodName=TLP7820
TLP7820(TP4,E
Hersteller: Toshiba Semiconductor and Storage
Description: IC OPAMP ISOLATION 1 CIRCUIT 8SO
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.295", 7.50mm Width)
Output Type: Differential
Mounting Type: Surface Mount
Amplifier Type: Isolation
Operating Temperature: -40°C ~ 105°C
Current - Supply: 12mA
Current - Input Bias: 5.5 nA
Voltage - Input Offset: 900 µV
Supplier Device Package: 8-SO
Part Status: Active
Number of Circuits: 1
-3db Bandwidth: 230 kHz
Voltage - Supply Span (Min): 4.5 V
Voltage - Supply Span (Max): 5.5 V
auf Bestellung 5171 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
2+15.34 EUR
10+ 10.85 EUR
100+ 8.88 EUR
500+ 7.49 EUR
Mindestbestellmenge: 2
TB67B000HG docget.jsp?did=14106&prodName=TB67B000HG
TB67B000HG
Hersteller: Toshiba Semiconductor and Storage
Description: IC MOTOR DRVR 13.5V-16.5V 30HDIP
auf Bestellung 4 Stücke:
Lieferzeit 21-28 Tag (e)
TLP2745(TP,E
TLP2745(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV PUSH PULL SO6L
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 3ns, 3ns
Common Mode Transient Immunity (Min): 30kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
auf Bestellung 10500 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1500+0.92 EUR
3000+ 0.87 EUR
7500+ 0.85 EUR
10500+ 0.83 EUR
Mindestbestellmenge: 1500
TLP2748(TP,E
TLP2748(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV PUSH PULL SO6L
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 3ns, 3ns
Common Mode Transient Immunity (Min): 30kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Number of Channels: 1
Current - Output / Channel: 50 mA
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
1500+0.95 EUR
3000+ 0.9 EUR
Mindestbestellmenge: 1500
TLP2745(TP,E
TLP2745(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV PUSH PULL SO6L
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 3ns, 3ns
Common Mode Transient Immunity (Min): 30kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
auf Bestellung 12251 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10+2.6 EUR
16+ 1.64 EUR
100+ 1.22 EUR
500+ 1.12 EUR
Mindestbestellmenge: 10
TLP2748(TP,E
TLP2748(TP,E
Hersteller: Toshiba Semiconductor and Storage
Description: OPTOISO 5KV PUSH PULL SO6L
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.295", 7.50mm Width)
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 4.5V ~ 30V
Voltage - Forward (Vf) (Typ): 1.55V
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 15mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 6-SO
Rise / Fall Time (Typ): 3ns, 3ns
Common Mode Transient Immunity (Min): 30kV/µs
Propagation Delay tpLH / tpHL (Max): 120ns, 120ns
Number of Channels: 1
Current - Output / Channel: 50 mA
auf Bestellung 6099 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
10+2.68 EUR
16+ 1.69 EUR
100+ 1.25 EUR
500+ 1.15 EUR
Mindestbestellmenge: 10
74HC164D description 74HC164D_datasheet_en_20160707.pdf?did=36767&prodName=74HC164D
74HC164D
Hersteller: Toshiba Semiconductor and Storage
Description: IC SHIFT REGISTER 8BIT 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Supplier Device Package: 14-SOP
Part Status: Active
Number of Bits per Element: 8
auf Bestellung 38726 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
25+1.07 EUR
29+ 0.91 EUR
31+ 0.85 EUR
100+ 0.68 EUR
250+ 0.63 EUR
500+ 0.53 EUR
1000+ 0.41 EUR
Mindestbestellmenge: 25
74HC86D description 74HC86D_datasheet_en_20160804.pdf?did=36769&prodName=74HC86D
74HC86D
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE XOR 4CH 2-INP 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 5.2mA, 5.2mA
Number of Inputs: 2
Supplier Device Package: 14-SOP
Input Logic Level - High: 1.5V ~ 4.2V
Input Logic Level - Low: 0.5V ~ 1.8V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 1 µA
auf Bestellung 17519 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
25+1.07 EUR
29+ 0.91 EUR
31+ 0.85 EUR
100+ 0.68 EUR
250+ 0.63 EUR
500+ 0.53 EUR
1000+ 0.41 EUR
Mindestbestellmenge: 25
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