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TK14G65W5,RQ TK14G65W5,RQ Toshiba Semiconductor and Storage docget.jsp?did=14505&prodName=TK14G65W5 Description: MOSFET N-CH 650V 13.7A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 690µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
Produkt ist nicht verfügbar
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TK20V60W5,LVQ TK20V60W5,LVQ Toshiba Semiconductor and Storage TK20V60W5_datasheet_en_20160108.pdf?did=28825&prodName=TK20V60W5 Description: MOSFET N-CH 600V 20A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+2.27 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
TK6P65W,RQ TK6P65W,RQ Toshiba Semiconductor and Storage Description: MOSFET N-CH 650V 5.8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2.9A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TK7P65W,RQ TK7P65W,RQ Toshiba Semiconductor and Storage Description: MOSFET N-CH 650V 6.8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.4A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V
Produkt ist nicht verfügbar
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TK25E60X,S1X TK25E60X,S1X Toshiba Semiconductor and Storage docget.jsp?did=15196&prodName=TK25E60X Description: MOSFET N-CH 600V 25A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.5A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TK25N60X,S1F TK25N60X,S1F Toshiba Semiconductor and Storage docget.jsp?did=15197&prodName=TK25N60X Description: MOSFET N-CH 600V 25A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.5A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
auf Bestellung 26 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.42 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
TK7A60W5,S5VX TK7A60W5,S5VX Toshiba Semiconductor and Storage TK7A60W5_datasheet_en_20140225.pdf?did=14493&prodName=TK7A60W5 Description: MOSFET N-CH 600V 7A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 350µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V
auf Bestellung 46 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.75 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
TK8A60W5,S5VX TK8A60W5,S5VX Toshiba Semiconductor and Storage TK8A60W5_datasheet_en_20140225.pdf?did=14495&prodName=TK8A60W5 Description: MOSFET N-CH 600V 8A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 540mOhm @ 4A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 400µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TK10A60W5,S5VX TK10A60W5,S5VX Toshiba Semiconductor and Storage docget.jsp?did=14291&prodName=TK10A60W5 Description: MOSFET N-CH 600V 9.7A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 300 V
auf Bestellung 38 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.92 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
TK20N60W5,S1VF TK20N60W5,S1VF Toshiba Semiconductor and Storage docget.jsp?did=14961&prodName=TK20N60W5 Description: MOSFET N-CH 600V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 175mOhm @ 10A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
auf Bestellung 19 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.54 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
TK25N60X5,S1F TK25N60X5,S1F Toshiba Semiconductor and Storage docget.jsp?did=15557&prodName=TK25N60X5 Description: MOSFET N-CH 600V 25A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
auf Bestellung 76 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.1 EUR
30+5.51 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
TK39N60W5,S1VF TK39N60W5,S1VF Toshiba Semiconductor and Storage docget.jsp?did=14536&prodName=TK39N60W5 Description: MOSFET N-CH 600V 38.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
Rds On (Max) @ Id, Vgs: 74mOhm @ 19.4A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V
auf Bestellung 1482 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.79 EUR
30+8.17 EUR
120+6.81 EUR
510+5.76 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
TK5Q65W,S1Q TK5Q65W,S1Q Toshiba Semiconductor and Storage Description: MOSFET N-CH 650V 5.2A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 1.22Ohm @ 2.6A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: I-PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V
auf Bestellung 75 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.24 EUR
10+2 EUR
Mindestbestellmenge: 8
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TK6Q65W,S1Q TK6Q65W,S1Q Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TK6Q65W Description: MOSFET N-CH 650V 5.8A IPAK-OS
auf Bestellung 375 Stücke:
Lieferzeit 10-14 Tag (e)
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TK17E65W,S1X TK17E65W,S1X Toshiba Semiconductor and Storage docget.jsp?did=14508&prodName=TK17E65W Description: MOSFET N-CH 650V 17.3A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 8.7A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 900µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
auf Bestellung 23 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.76 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
TK8A65W,S5X TK8A65W,S5X Toshiba Semiconductor and Storage docget.jsp?did=15580&prodName=TK8A65W Description: MOSFET N-CH 650V 7.8A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta)
Rds On (Max) @ Id, Vgs: 650mOhm @ 3.9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 300 V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.68 EUR
50+1.43 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
TK17N65W,S1F TK17N65W,S1F Toshiba Semiconductor and Storage docget.jsp?did=14509&prodName=TK17N65W Description: MOSFET N-CH 650V 17.3A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 8.7A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 900µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TK28N65W,S1F TK28N65W,S1F Toshiba Semiconductor and Storage docget.jsp?did=14530&prodName=TK28N65W Description: MOSFET N-CH 650V 27.6A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 13.8A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.6mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.81 EUR
30+6.86 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
TK14E65W5,S1X TK14E65W5,S1X Toshiba Semiconductor and Storage TK14E65W5_datasheet_en_20140225.pdf?did=14504&prodName=TK14E65W5 Description: MOSFET N-CH 650V 13.7A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 690µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.32 EUR
10+4.77 EUR
Mindestbestellmenge: 4
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TK35A65W5,S5X TK35A65W5,S5X Toshiba Semiconductor and Storage docget.jsp?did=14533&prodName=TK35A65W5 Description: MOSFET N-CH 650V 35A TO220SIS
auf Bestellung 76 Stücke:
Lieferzeit 10-14 Tag (e)
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TK14N65W5,S1F TK14N65W5,S1F Toshiba Semiconductor and Storage docget.jsp?did=14526&prodName=TK14N65W5 Description: MOSFET N-CH 650V 13.7A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 690µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
2+8.92 EUR
30+5.07 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
TK25A60X,S5X TK25A60X,S5X Toshiba Semiconductor and Storage docget.jsp?did=15195&prodName=TK25A60X Description: MOSFET N-CH 600V 25A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
auf Bestellung 32 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.83 EUR
Mindestbestellmenge: 3
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TK16E60W5,S1VX TK16E60W5,S1VX Toshiba Semiconductor and Storage TK16E60W5_datasheet_en_20140225.pdf?did=14274&prodName=TK16E60W5 Description: MOSFET N-CH 600V 15.8A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 7.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
Produkt ist nicht verfügbar
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TK25A60X5,S5X TK25A60X5,S5X Toshiba Semiconductor and Storage docget.jsp?did=15552&prodName=TK25A60X5 Description: MOSFET N-CH 600V 25A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
auf Bestellung 1 Stücke:
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TK8Q65W,S1Q TK8Q65W,S1Q Toshiba Semiconductor and Storage TK8Q65W_datasheet_en_20140930.pdf?did=15581&prodName=TK8Q65W Description: MOSFET N-CH 650V 7.8A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta)
Rds On (Max) @ Id, Vgs: 670mOhm @ 3.9A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: I-PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 300 V
auf Bestellung 5 Stücke:
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TK5A65W,S5X TK5A65W,S5X Toshiba Semiconductor and Storage docget.jsp?did=15564&prodName=TK5A65W Description: MOSFET N-CH 650V 5.2A TO-220SIS
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TK6A65W,S5X TK6A65W,S5X Toshiba Semiconductor and Storage docget.jsp?did=15568&prodName=TK6A65W Description: MOSFET N-CH 650V 5.8A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V
auf Bestellung 50 Stücke:
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6+2.94 EUR
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TK7A65W,S5X TK7A65W,S5X Toshiba Semiconductor and Storage docget.jsp?did=15574&prodName=TK7A65W Description: MOSFET N-CH 650V 6.8A TO220SIS
Produkt ist nicht verfügbar
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TK9A65W,S5X TK9A65W,S5X Toshiba Semiconductor and Storage docget.jsp?did=15583&prodName=TK9A65W Description: MOSFET N-CH 650V 9.3A TO-220SIS
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TK28A65W,S5X TK28A65W,S5X Toshiba Semiconductor and Storage docget.jsp?did=15562&prodName=TK28A65W Description: MOSFET N-CH 650V 27.6A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 13.8A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.6mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 100 Stücke:
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2+9.45 EUR
50+5 EUR
100+4.57 EUR
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TBD62003APG TBD62003APG Toshiba Semiconductor and Storage TBD62003AFG_datasheet_en_20150724.pdf?did=29886&prodName=TBD62003AFG Description: IC PWR SWITCH N-CHAN 1:1 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-DIP
Part Status: Active
auf Bestellung 1162 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.75 EUR
10+2.01 EUR
25+1.83 EUR
100+1.63 EUR
250+1.53 EUR
500+1.47 EUR
1000+1.43 EUR
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TBD62004APG TBD62004APG Toshiba Semiconductor and Storage TBD62003AFG_datasheet_en_20150724.pdf?did=29886&prodName=TBD62003AFG Description: IC PWR SWITCH N-CHAN 1:1 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-DIP
Part Status: Active
auf Bestellung 1084 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.53 EUR
10+1.86 EUR
25+1.69 EUR
100+1.5 EUR
250+1.41 EUR
500+1.36 EUR
1000+1.32 EUR
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TBD62083APG TBD62083APG Toshiba Semiconductor and Storage TBD62083AFG_datasheet_en_20160511.pdf?did=29893&prodName=TBD62083AFG Description: IC PWR SWITCH N-CHAN 1:1 18DIP
Packaging: Tube
Package / Case: 18-DIP (0.300", 7.62mm)
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-DIP
Part Status: Active
Produkt ist nicht verfügbar
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TBD62084APG TBD62084APG Toshiba Semiconductor and Storage TBD62083AFG_datasheet_en_20160511.pdf?did=29893&prodName=TBD62083AFG Description: IC PWR SWITCH N-CHAN 1:1 18DIP
Packaging: Tube
Package / Case: 18-DIP (0.300", 7.62mm)
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-DIP
Part Status: Active
auf Bestellung 499 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.45 EUR
10+2.55 EUR
25+2.33 EUR
100+2.08 EUR
250+1.96 EUR
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TBD62783APG TBD62783APG Toshiba Semiconductor and Storage TBD62783AFG_datasheet_en_20160511.pdf?did=30523&prodName=TBD62783AFG Description: IC PWR SWITCH P-CHAN 1:1 18DIP
Packaging: Tube
Package / Case: 18-DIP (0.300", 7.62mm)
Output Type: P-Channel
Mounting Type: Through Hole
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-DIP
Part Status: Active
auf Bestellung 8283 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.63 EUR
20+2.51 EUR
40+2.36 EUR
100+2.2 EUR
260+2.07 EUR
500+2 EUR
1000+1.94 EUR
2500+1.88 EUR
5000+1.84 EUR
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TB6562ANG,8 TB6562ANG,8 Toshiba Semiconductor and Storage TB6562AFG_datasheet_en_20120928.pdf?did=2725&prodName=TB6562AFG Description: IC MTR DRV BIPOLAR 10-34V 24SDIP
Packaging: Tube
Package / Case: 24-SDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.5A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 10V ~ 34V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 10V ~ 34V
Supplier Device Package: 24-SDIP
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1, 1/2, 1/4
Produkt ist nicht verfügbar
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TBD62003AFG,EL TBD62003AFG,EL Toshiba Semiconductor and Storage TBD62003AFG_datasheet_en_20150724.pdf?did=29886&prodName=TBD62003AFG Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
Part Status: Active
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+1.03 EUR
Mindestbestellmenge: 2000
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TBD62003AFNG,EL TBD62003AFNG,EL Toshiba Semiconductor and Storage TBD62003AFG_datasheet_en_20150724.pdf?did=29886&prodName=TBD62003AFG Description: IC PWR SWITCH N-CHAN 1:1 16SSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SSOP
Part Status: Active
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+1.34 EUR
4000+1.3 EUR
6000+1.29 EUR
10000+1.27 EUR
Mindestbestellmenge: 2000
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TBD62003AFWG,EL TBD62003AFWG,EL Toshiba Semiconductor and Storage TBD62003AFG_datasheet_en_20150724.pdf?did=29886&prodName=TBD62003AFG Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
Part Status: Active
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+0.88 EUR
Mindestbestellmenge: 2000
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TBD62004AFG,EL TBD62004AFG,EL Toshiba Semiconductor and Storage TBD62003AFG_datasheet_en_20150724.pdf?did=29886&prodName=TBD62003AFG Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
Part Status: Active
Produkt ist nicht verfügbar
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TBD62004AFNG,EL TBD62004AFNG,EL Toshiba Semiconductor and Storage TBD62003AFG_datasheet_en_20150724.pdf?did=29886&prodName=TBD62003AFG Description: IC PWR SWITCH N-CHAN 1:1 16SSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SSOP
Part Status: Active
Produkt ist nicht verfügbar
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TBD62004AFWG,EL TBD62004AFWG,EL Toshiba Semiconductor and Storage TBD62003AFG_datasheet_en_20150724.pdf?did=29886&prodName=TBD62003AFG Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
Part Status: Active
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+0.82 EUR
4000+0.8 EUR
Mindestbestellmenge: 2000
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TBD62083AFG,EL TBD62083AFG,EL Toshiba Semiconductor and Storage TBD62083AFG_datasheet_en_20160511.pdf?did=29893&prodName=TBD62083AFG Description: IC PWR SWITCH N-CHAN 1:1 18SOP
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.276", 7.00mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Logic Type: DMOS
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Voltage - Supply: 2.5V ~ 25V
Input Type: Inverting
Current - Output High, Low: 350mA, 100mA
Number of Inputs: 8
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
Max Propagation Delay @ V, Max CL: 800ms @ 50V, 15pF
Part Status: Active
Number of Circuits: 8
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
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TBD62083AFNG,EL TBD62083AFNG,EL Toshiba Semiconductor and Storage TBD62083AFG_datasheet_en_20160511.pdf?did=29893&prodName=TBD62083AFG Description: IC PWR SWITCH N-CHAN 1:1 18SSOP
Packaging: Tape & Reel (TR)
Package / Case: 18-LSSOP (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Logic Type: DMOS
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Voltage - Supply: 2.5V ~ 25V
Input Type: Inverting
Current - Output High, Low: 350mA, 100mA
Number of Inputs: 8
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SSOP
Max Propagation Delay @ V, Max CL: 800ms @ 50V, 15pF
Part Status: Active
Number of Circuits: 8
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TBD62083AFWG,EL TBD62083AFWG,EL Toshiba Semiconductor and Storage TBD62083AFG_datasheet_en_20160511.pdf?did=29893&prodName=TBD62083AFG Description: IC PWR SWITCH N-CHAN 1:1 18SOP
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Logic Type: DMOS
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Voltage - Supply: 2.5V ~ 25V
Input Type: Inverting
Current - Output High, Low: 350mA, 100mA
Number of Inputs: 8
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
Max Propagation Delay @ V, Max CL: 800ms @ 50V, 15pF
Part Status: Active
Number of Circuits: 8
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
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TBD62084AFG,EL TBD62084AFG,EL Toshiba Semiconductor and Storage TBD62083AFG_datasheet_en_20160511.pdf?did=29893&prodName=TBD62083AFG Description: IC PWR SWITCH N-CHAN 1:1 18SOP
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.276", 7.00mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TBD62084AFNG,EL TBD62084AFNG,EL Toshiba Semiconductor and Storage TBD62083AFG_datasheet_en_20160511.pdf?did=29893&prodName=TBD62083AFG Description: IC PWR SWITCH N-CHAN 1:1 18SSOP
Packaging: Tape & Reel (TR)
Package / Case: 18-LSSOP (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SSOP
Part Status: Active
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+1.51 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
TBD62084AFWG,EL TBD62084AFWG,EL Toshiba Semiconductor and Storage TBD62083AFG_datasheet_en_20160511.pdf?did=29893&prodName=TBD62083AFG Description: IC PWR SWITCH N-CHAN 1:1 18SOP
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Logic Type: DMOS
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Voltage - Supply: 7V ~ 25V
Input Type: Inverting
Current - Output High, Low: 350mA, 100mA
Number of Inputs: 8
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
Max Propagation Delay @ V, Max CL: 800ms @ 50V, 15pF
Part Status: Active
Number of Circuits: 8
Current - Quiescent (Max): 1 µA
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+1.48 EUR
2000+1.44 EUR
3000+1.42 EUR
5000+1.39 EUR
7000+1.38 EUR
Mindestbestellmenge: 1000
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TBD62502AFG,EL TBD62502AFG,EL Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TBD62502AFG Description: IC LOAD SWITCH 7CH 0.3A 16SOP
auf Bestellung 2000 Stücke:
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TBD62502AFNG,EL TBD62502AFNG,EL Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TBD62502AFG Description: IC LOAD SWITCH 7CH 0.3A 16SSOP
auf Bestellung 2000 Stücke:
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TBD62502AFWG,EL TBD62502AFWG,EL Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TBD62502AFG Description: IC LOAD SWITCH 7CH 0.3A 16PSOP
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TBD62783AFG,EL TBD62783AFG,EL Toshiba Semiconductor and Storage TBD62783AFG_datasheet_en_20160511.pdf?did=30523&prodName=TBD62783AFG Description: IC PWR SWITCH P-CHAN 1:1 18SOP
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.276", 7.00mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
Part Status: Active
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+1.19 EUR
2000+1.09 EUR
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TBD62783AFNG,EL TBD62783AFNG,EL Toshiba Semiconductor and Storage TBD62783AFG_datasheet_en_20160511.pdf?did=30523&prodName=TBD62783AFG Description: IC PWR SWITCH P-CHAN 1:1 18SSOP
Packaging: Tape & Reel (TR)
Package / Case: 18-LSSOP (0.173", 4.40mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SSOP
Part Status: Active
auf Bestellung 2000 Stücke:
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2000+1.21 EUR
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TBD62783AFWG,EL TBD62783AFWG,EL Toshiba Semiconductor and Storage TBD62783AFG_datasheet_en_20160511.pdf?did=30523&prodName=TBD62783AFG Description: IC PWR SWITCH P-CHAN 1:1 18SOP
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
Part Status: Active
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+0.85 EUR
2000+0.78 EUR
3000+0.74 EUR
5000+0.7 EUR
7000+0.68 EUR
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TBD62003AFG,EL TBD62003AFG,EL Toshiba Semiconductor and Storage TBD62003AFG_datasheet_en_20150724.pdf?did=29886&prodName=TBD62003AFG Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
Part Status: Active
auf Bestellung 3629 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.08 EUR
12+1.52 EUR
25+1.37 EUR
100+1.22 EUR
250+1.14 EUR
500+1.1 EUR
1000+1.06 EUR
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TBD62003AFNG,EL TBD62003AFNG,EL Toshiba Semiconductor and Storage TBD62003AFG_datasheet_en_20150724.pdf?did=29886&prodName=TBD62003AFG Description: IC PWR SWITCH N-CHAN 1:1 16SSOP
Packaging: Cut Tape (CT)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SSOP
Part Status: Active
auf Bestellung 14765 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.64 EUR
10+1.94 EUR
25+1.76 EUR
100+1.57 EUR
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TBD62003AFWG,EL TBD62003AFWG,EL Toshiba Semiconductor and Storage TBD62003AFG_datasheet_en_20150724.pdf?did=29886&prodName=TBD62003AFG Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
Part Status: Active
auf Bestellung 3108 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.81 EUR
14+1.32 EUR
25+1.19 EUR
100+1.05 EUR
250+0.98 EUR
500+0.94 EUR
1000+0.91 EUR
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TBD62004AFG,EL TBD62004AFG,EL Toshiba Semiconductor and Storage TBD62003AFG_datasheet_en_20150724.pdf?did=29886&prodName=TBD62003AFG Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
Part Status: Active
auf Bestellung 1990 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.02 EUR
12+1.48 EUR
25+1.34 EUR
100+1.19 EUR
250+1.11 EUR
500+1.07 EUR
1000+1.03 EUR
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TBD62004AFNG,EL TBD62004AFNG,EL Toshiba Semiconductor and Storage TBD62003AFG_datasheet_en_20150724.pdf?did=29886&prodName=TBD62003AFG Description: IC PWR SWITCH N-CHAN 1:1 16SSOP
Packaging: Cut Tape (CT)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SSOP
Part Status: Active
auf Bestellung 1984 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.45 EUR
10+1.79 EUR
25+1.63 EUR
100+1.45 EUR
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1000+1.27 EUR
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TBD62004AFWG,EL TBD62004AFWG,EL Toshiba Semiconductor and Storage TBD62003AFG_datasheet_en_20150724.pdf?did=29886&prodName=TBD62003AFG Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
Part Status: Active
auf Bestellung 4154 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.67 EUR
15+1.22 EUR
25+1.1 EUR
100+0.97 EUR
250+0.91 EUR
500+0.87 EUR
1000+0.84 EUR
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TK14G65W5,RQ docget.jsp?did=14505&prodName=TK14G65W5
TK14G65W5,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 13.7A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 690µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
Produkt ist nicht verfügbar
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TK20V60W5,LVQ TK20V60W5_datasheet_en_20160108.pdf?did=28825&prodName=TK20V60W5
TK20V60W5,LVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 20A 4DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+2.27 EUR
Mindestbestellmenge: 2500
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TK6P65W,RQ
TK6P65W,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 5.8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2.9A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V
Produkt ist nicht verfügbar
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TK7P65W,RQ
TK7P65W,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 6.8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.4A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V
Produkt ist nicht verfügbar
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TK25E60X,S1X docget.jsp?did=15196&prodName=TK25E60X
TK25E60X,S1X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 25A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.5A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
Produkt ist nicht verfügbar
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TK25N60X,S1F docget.jsp?did=15197&prodName=TK25N60X
TK25N60X,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 25A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.5A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
auf Bestellung 26 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.42 EUR
Mindestbestellmenge: 2
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TK7A60W5,S5VX TK7A60W5_datasheet_en_20140225.pdf?did=14493&prodName=TK7A60W5
TK7A60W5,S5VX
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 7A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 350µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V
auf Bestellung 46 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.75 EUR
Mindestbestellmenge: 5
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TK8A60W5,S5VX TK8A60W5_datasheet_en_20140225.pdf?did=14495&prodName=TK8A60W5
TK8A60W5,S5VX
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 8A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 540mOhm @ 4A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 400µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V
Produkt ist nicht verfügbar
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TK10A60W5,S5VX docget.jsp?did=14291&prodName=TK10A60W5
TK10A60W5,S5VX
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 9.7A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.7A (Ta)
Rds On (Max) @ Id, Vgs: 450mOhm @ 4.9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 500µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 300 V
auf Bestellung 38 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.92 EUR
Mindestbestellmenge: 5
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TK20N60W5,S1VF docget.jsp?did=14961&prodName=TK20N60W5
TK20N60W5,S1VF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 20A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 175mOhm @ 10A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
auf Bestellung 19 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.54 EUR
Mindestbestellmenge: 3
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TK25N60X5,S1F docget.jsp?did=15557&prodName=TK25N60X5
TK25N60X5,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 25A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
auf Bestellung 76 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.1 EUR
30+5.51 EUR
Mindestbestellmenge: 2
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TK39N60W5,S1VF docget.jsp?did=14536&prodName=TK39N60W5
TK39N60W5,S1VF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 38.8A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38.8A (Ta)
Rds On (Max) @ Id, Vgs: 74mOhm @ 19.4A, 10V
Power Dissipation (Max): 270W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.9mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 135 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 300 V
auf Bestellung 1482 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.79 EUR
30+8.17 EUR
120+6.81 EUR
510+5.76 EUR
Mindestbestellmenge: 2
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TK5Q65W,S1Q
TK5Q65W,S1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 5.2A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.2A (Ta)
Rds On (Max) @ Id, Vgs: 1.22Ohm @ 2.6A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 170µA
Supplier Device Package: I-PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 380 pF @ 300 V
auf Bestellung 75 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.24 EUR
10+2 EUR
Mindestbestellmenge: 8
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TK6Q65W,S1Q docget.jsp?type=datasheet&lang=en&pid=TK6Q65W
TK6Q65W,S1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 5.8A IPAK-OS
auf Bestellung 375 Stücke:
Lieferzeit 10-14 Tag (e)
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TK17E65W,S1X docget.jsp?did=14508&prodName=TK17E65W
TK17E65W,S1X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 17.3A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 8.7A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 900µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
auf Bestellung 23 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.76 EUR
Mindestbestellmenge: 3
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TK8A65W,S5X docget.jsp?did=15580&prodName=TK8A65W
TK8A65W,S5X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 7.8A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta)
Rds On (Max) @ Id, Vgs: 650mOhm @ 3.9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 300 V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.68 EUR
50+1.43 EUR
Mindestbestellmenge: 7
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TK17N65W,S1F docget.jsp?did=14509&prodName=TK17N65W
TK17N65W,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 17.3A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.3A (Ta)
Rds On (Max) @ Id, Vgs: 200mOhm @ 8.7A, 10V
Power Dissipation (Max): 165W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 900µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
Produkt ist nicht verfügbar
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TK28N65W,S1F docget.jsp?did=14530&prodName=TK28N65W
TK28N65W,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 27.6A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 13.8A, 10V
Power Dissipation (Max): 230W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.6mA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.81 EUR
30+6.86 EUR
Mindestbestellmenge: 2
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TK14E65W5,S1X TK14E65W5_datasheet_en_20140225.pdf?did=14504&prodName=TK14E65W5
TK14E65W5,S1X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 13.7A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 690µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
auf Bestellung 15 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.32 EUR
10+4.77 EUR
Mindestbestellmenge: 4
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TK35A65W5,S5X docget.jsp?did=14533&prodName=TK35A65W5
TK35A65W5,S5X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 35A TO220SIS
auf Bestellung 76 Stücke:
Lieferzeit 10-14 Tag (e)
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TK14N65W5,S1F docget.jsp?did=14526&prodName=TK14N65W5
TK14N65W5,S1F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 13.7A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 690µA
Supplier Device Package: TO-247
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
auf Bestellung 30 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+8.92 EUR
30+5.07 EUR
Mindestbestellmenge: 2
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TK25A60X,S5X docget.jsp?did=15195&prodName=TK25A60X
TK25A60X,S5X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 25A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 7.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.2mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
auf Bestellung 32 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.83 EUR
Mindestbestellmenge: 3
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TK16E60W5,S1VX TK16E60W5_datasheet_en_20140225.pdf?did=14274&prodName=TK16E60W5
TK16E60W5,S1VX
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 15.8A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.8A (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 7.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 790µA
Supplier Device Package: TO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 300 V
Produkt ist nicht verfügbar
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TK25A60X5,S5X docget.jsp?did=15552&prodName=TK25A60X5
TK25A60X5,S5X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 25A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.2mA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 300 V
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
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TK8Q65W,S1Q TK8Q65W_datasheet_en_20140930.pdf?did=15581&prodName=TK8Q65W
TK8Q65W,S1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 7.8A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.8A (Ta)
Rds On (Max) @ Id, Vgs: 670mOhm @ 3.9A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 300µA
Supplier Device Package: I-PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 570 pF @ 300 V
auf Bestellung 5 Stücke:
Lieferzeit 10-14 Tag (e)
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TK5A65W,S5X docget.jsp?did=15564&prodName=TK5A65W
TK5A65W,S5X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 5.2A TO-220SIS
auf Bestellung 98 Stücke:
Lieferzeit 10-14 Tag (e)
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TK6A65W,S5X docget.jsp?did=15568&prodName=TK6A65W
TK6A65W,S5X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 5.8A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.9A, 10V
Power Dissipation (Max): 30W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Supplier Device Package: TO-220SIS
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.94 EUR
50+1.43 EUR
Mindestbestellmenge: 6
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TK7A65W,S5X docget.jsp?did=15574&prodName=TK7A65W
TK7A65W,S5X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 6.8A TO220SIS
Produkt ist nicht verfügbar
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TK9A65W,S5X docget.jsp?did=15583&prodName=TK9A65W
TK9A65W,S5X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 9.3A TO-220SIS
Produkt ist nicht verfügbar
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TK28A65W,S5X docget.jsp?did=15562&prodName=TK28A65W
TK28A65W,S5X
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 27.6A TO220SIS
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27.6A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 13.8A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 1.6mA
Supplier Device Package: TO-220SIS
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 300 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.45 EUR
50+5 EUR
100+4.57 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
TBD62003APG TBD62003AFG_datasheet_en_20150724.pdf?did=29886&prodName=TBD62003AFG
TBD62003APG
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-DIP
Part Status: Active
auf Bestellung 1162 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.75 EUR
10+2.01 EUR
25+1.83 EUR
100+1.63 EUR
250+1.53 EUR
500+1.47 EUR
1000+1.43 EUR
Mindestbestellmenge: 7
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TBD62004APG TBD62003AFG_datasheet_en_20150724.pdf?did=29886&prodName=TBD62003AFG
TBD62004APG
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16DIP
Packaging: Tube
Package / Case: 16-DIP (0.300", 7.62mm)
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-DIP
Part Status: Active
auf Bestellung 1084 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.53 EUR
10+1.86 EUR
25+1.69 EUR
100+1.5 EUR
250+1.41 EUR
500+1.36 EUR
1000+1.32 EUR
Mindestbestellmenge: 7
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TBD62083APG TBD62083AFG_datasheet_en_20160511.pdf?did=29893&prodName=TBD62083AFG
TBD62083APG
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 18DIP
Packaging: Tube
Package / Case: 18-DIP (0.300", 7.62mm)
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-DIP
Part Status: Active
Produkt ist nicht verfügbar
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TBD62084APG TBD62083AFG_datasheet_en_20160511.pdf?did=29893&prodName=TBD62083AFG
TBD62084APG
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 18DIP
Packaging: Tube
Package / Case: 18-DIP (0.300", 7.62mm)
Output Type: N-Channel
Mounting Type: Through Hole
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-DIP
Part Status: Active
auf Bestellung 499 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.45 EUR
10+2.55 EUR
25+2.33 EUR
100+2.08 EUR
250+1.96 EUR
Mindestbestellmenge: 6
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TBD62783APG TBD62783AFG_datasheet_en_20160511.pdf?did=30523&prodName=TBD62783AFG
TBD62783APG
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH P-CHAN 1:1 18DIP
Packaging: Tube
Package / Case: 18-DIP (0.300", 7.62mm)
Output Type: P-Channel
Mounting Type: Through Hole
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-DIP
Part Status: Active
auf Bestellung 8283 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.63 EUR
20+2.51 EUR
40+2.36 EUR
100+2.2 EUR
260+2.07 EUR
500+2 EUR
1000+1.94 EUR
2500+1.88 EUR
5000+1.84 EUR
Mindestbestellmenge: 5
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TB6562ANG,8 TB6562AFG_datasheet_en_20120928.pdf?did=2725&prodName=TB6562AFG
TB6562ANG,8
Hersteller: Toshiba Semiconductor and Storage
Description: IC MTR DRV BIPOLAR 10-34V 24SDIP
Packaging: Tube
Package / Case: 24-SDIP (0.300", 7.62mm)
Mounting Type: Through Hole
Function: Driver - Fully Integrated, Control and Power Stage
Current - Output: 1.5A
Interface: Parallel
Operating Temperature: -20°C ~ 150°C (TJ)
Output Configuration: Half Bridge (4)
Voltage - Supply: 10V ~ 34V
Applications: General Purpose
Technology: DMOS
Voltage - Load: 10V ~ 34V
Supplier Device Package: 24-SDIP
Motor Type - Stepper: Bipolar
Motor Type - AC, DC: Brushed DC
Step Resolution: 1, 1/2, 1/4
Produkt ist nicht verfügbar
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TBD62003AFG,EL TBD62003AFG_datasheet_en_20150724.pdf?did=29886&prodName=TBD62003AFG
TBD62003AFG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
Part Status: Active
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+1.03 EUR
Mindestbestellmenge: 2000
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TBD62003AFNG,EL TBD62003AFG_datasheet_en_20150724.pdf?did=29886&prodName=TBD62003AFG
TBD62003AFNG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16SSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SSOP
Part Status: Active
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+1.34 EUR
4000+1.3 EUR
6000+1.29 EUR
10000+1.27 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
TBD62003AFWG,EL TBD62003AFG_datasheet_en_20150724.pdf?did=29886&prodName=TBD62003AFG
TBD62003AFWG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
Part Status: Active
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.88 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
TBD62004AFG,EL TBD62003AFG_datasheet_en_20150724.pdf?did=29886&prodName=TBD62003AFG
TBD62004AFG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TBD62004AFNG,EL TBD62003AFG_datasheet_en_20150724.pdf?did=29886&prodName=TBD62003AFG
TBD62004AFNG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16SSOP
Packaging: Tape & Reel (TR)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SSOP
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TBD62004AFWG,EL TBD62003AFG_datasheet_en_20150724.pdf?did=29886&prodName=TBD62003AFG
TBD62004AFWG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
Part Status: Active
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+0.82 EUR
4000+0.8 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
TBD62083AFG,EL TBD62083AFG_datasheet_en_20160511.pdf?did=29893&prodName=TBD62083AFG
TBD62083AFG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 18SOP
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.276", 7.00mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Logic Type: DMOS
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Voltage - Supply: 2.5V ~ 25V
Input Type: Inverting
Current - Output High, Low: 350mA, 100mA
Number of Inputs: 8
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
Max Propagation Delay @ V, Max CL: 800ms @ 50V, 15pF
Part Status: Active
Number of Circuits: 8
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TBD62083AFNG,EL TBD62083AFG_datasheet_en_20160511.pdf?did=29893&prodName=TBD62083AFG
TBD62083AFNG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 18SSOP
Packaging: Tape & Reel (TR)
Package / Case: 18-LSSOP (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Logic Type: DMOS
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Voltage - Supply: 2.5V ~ 25V
Input Type: Inverting
Current - Output High, Low: 350mA, 100mA
Number of Inputs: 8
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SSOP
Max Propagation Delay @ V, Max CL: 800ms @ 50V, 15pF
Part Status: Active
Number of Circuits: 8
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TBD62083AFWG,EL TBD62083AFG_datasheet_en_20160511.pdf?did=29893&prodName=TBD62083AFG
TBD62083AFWG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 18SOP
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Logic Type: DMOS
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Voltage - Supply: 2.5V ~ 25V
Input Type: Inverting
Current - Output High, Low: 350mA, 100mA
Number of Inputs: 8
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
Max Propagation Delay @ V, Max CL: 800ms @ 50V, 15pF
Part Status: Active
Number of Circuits: 8
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TBD62084AFG,EL TBD62083AFG_datasheet_en_20160511.pdf?did=29893&prodName=TBD62083AFG
TBD62084AFG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 18SOP
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.276", 7.00mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TBD62084AFNG,EL TBD62083AFG_datasheet_en_20160511.pdf?did=29893&prodName=TBD62083AFG
TBD62084AFNG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 18SSOP
Packaging: Tape & Reel (TR)
Package / Case: 18-LSSOP (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SSOP
Part Status: Active
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+1.51 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
TBD62084AFWG,EL TBD62083AFG_datasheet_en_20160511.pdf?did=29893&prodName=TBD62083AFG
TBD62084AFWG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 18SOP
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Logic Type: DMOS
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Voltage - Supply: 7V ~ 25V
Input Type: Inverting
Current - Output High, Low: 350mA, 100mA
Number of Inputs: 8
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
Max Propagation Delay @ V, Max CL: 800ms @ 50V, 15pF
Part Status: Active
Number of Circuits: 8
Current - Quiescent (Max): 1 µA
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+1.48 EUR
2000+1.44 EUR
3000+1.42 EUR
5000+1.39 EUR
7000+1.38 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
TBD62502AFG,EL docget.jsp?type=datasheet&lang=en&pid=TBD62502AFG
TBD62502AFG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC LOAD SWITCH 7CH 0.3A 16SOP
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TBD62502AFNG,EL docget.jsp?type=datasheet&lang=en&pid=TBD62502AFG
TBD62502AFNG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC LOAD SWITCH 7CH 0.3A 16SSOP
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TBD62502AFWG,EL docget.jsp?type=datasheet&lang=en&pid=TBD62502AFG
TBD62502AFWG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC LOAD SWITCH 7CH 0.3A 16PSOP
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TBD62783AFG,EL TBD62783AFG_datasheet_en_20160511.pdf?did=30523&prodName=TBD62783AFG
TBD62783AFG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH P-CHAN 1:1 18SOP
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.276", 7.00mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
Part Status: Active
auf Bestellung 7000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+1.19 EUR
2000+1.09 EUR
3000+1.05 EUR
5000+1.02 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
TBD62783AFNG,EL TBD62783AFG_datasheet_en_20160511.pdf?did=30523&prodName=TBD62783AFG
TBD62783AFNG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH P-CHAN 1:1 18SSOP
Packaging: Tape & Reel (TR)
Package / Case: 18-LSSOP (0.173", 4.40mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SSOP
Part Status: Active
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+1.21 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
TBD62783AFWG,EL TBD62783AFG_datasheet_en_20160511.pdf?did=30523&prodName=TBD62783AFG
TBD62783AFWG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH P-CHAN 1:1 18SOP
Packaging: Tape & Reel (TR)
Package / Case: 18-SOIC (0.295", 7.50mm Width)
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 8
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Input Type: Non-Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 18-SOP
Part Status: Active
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+0.85 EUR
2000+0.78 EUR
3000+0.74 EUR
5000+0.7 EUR
7000+0.68 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
TBD62003AFG,EL TBD62003AFG_datasheet_en_20150724.pdf?did=29886&prodName=TBD62003AFG
TBD62003AFG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
Part Status: Active
auf Bestellung 3629 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.08 EUR
12+1.52 EUR
25+1.37 EUR
100+1.22 EUR
250+1.14 EUR
500+1.1 EUR
1000+1.06 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
TBD62003AFNG,EL TBD62003AFG_datasheet_en_20150724.pdf?did=29886&prodName=TBD62003AFG
TBD62003AFNG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16SSOP
Packaging: Cut Tape (CT)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SSOP
Part Status: Active
auf Bestellung 14765 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.64 EUR
10+1.94 EUR
25+1.76 EUR
100+1.57 EUR
250+1.48 EUR
500+1.42 EUR
1000+1.37 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
TBD62003AFWG,EL TBD62003AFG_datasheet_en_20150724.pdf?did=29886&prodName=TBD62003AFG
TBD62003AFWG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
Part Status: Active
auf Bestellung 3108 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.81 EUR
14+1.32 EUR
25+1.19 EUR
100+1.05 EUR
250+0.98 EUR
500+0.94 EUR
1000+0.91 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
TBD62004AFG,EL TBD62003AFG_datasheet_en_20150724.pdf?did=29886&prodName=TBD62003AFG
TBD62004AFG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
Part Status: Active
auf Bestellung 1990 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.02 EUR
12+1.48 EUR
25+1.34 EUR
100+1.19 EUR
250+1.11 EUR
500+1.07 EUR
1000+1.03 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
TBD62004AFNG,EL TBD62003AFG_datasheet_en_20150724.pdf?did=29886&prodName=TBD62003AFG
TBD62004AFNG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16SSOP
Packaging: Cut Tape (CT)
Package / Case: 16-LSSOP (0.173", 4.40mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SSOP
Part Status: Active
auf Bestellung 1984 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.45 EUR
10+1.79 EUR
25+1.63 EUR
100+1.45 EUR
250+1.36 EUR
500+1.31 EUR
1000+1.27 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
TBD62004AFWG,EL TBD62003AFG_datasheet_en_20150724.pdf?did=29886&prodName=TBD62003AFG
TBD62004AFWG,EL
Hersteller: Toshiba Semiconductor and Storage
Description: IC PWR SWITCH N-CHAN 1:1 16SOP
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SOP
Part Status: Active
auf Bestellung 4154 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.67 EUR
15+1.22 EUR
25+1.1 EUR
100+0.97 EUR
250+0.91 EUR
500+0.87 EUR
1000+0.84 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
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