Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > Alle Produkte des Herstellers TOSHIBA SEMICONDUCTOR AND STORAGE (13020) > Seite 102 nach 217
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
||||||||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
TL2WU-DWJ,L | Toshiba Semiconductor and Storage | Description: LED WHITE 65MW CSP 0603 |
Produkt ist nicht verfügbar |
||||||||||||||||||
TL1L4-DW0,L4A5B | Toshiba Semiconductor and Storage | Description: POWER LED WHT 6500K 3535 |
Produkt ist nicht verfügbar |
||||||||||||||||||
TL1L4-NT0,L4A5B | Toshiba Semiconductor and Storage | Description: POWER LED WHT 5700K 3535 |
Produkt ist nicht verfügbar |
||||||||||||||||||
TL1L4-NW0,L4A5B | Toshiba Semiconductor and Storage | Description: POWER LED WHT 5000K 3535 |
Produkt ist nicht verfügbar |
||||||||||||||||||
TL1L4-WH0,L4A5B | Toshiba Semiconductor and Storage | Description: POWER LED WHT 4000K 3535 |
Produkt ist nicht verfügbar |
||||||||||||||||||
TL2WU-DWJ,L | Toshiba Semiconductor and Storage | Description: LED WHITE 65MW CSP 0603 |
Produkt ist nicht verfügbar |
||||||||||||||||||
TL1L4-DW0,L4A5B | Toshiba Semiconductor and Storage | Description: POWER LED WHT 6500K 3535 |
Produkt ist nicht verfügbar |
||||||||||||||||||
TL1L4-NT0,L4A5B | Toshiba Semiconductor and Storage | Description: POWER LED WHT 5700K 3535 |
Produkt ist nicht verfügbar |
||||||||||||||||||
TL1L4-NW0,L4A5B | Toshiba Semiconductor and Storage | Description: POWER LED WHT 5000K 3535 |
Produkt ist nicht verfügbar |
||||||||||||||||||
TL1L4-WH0,L4A5B | Toshiba Semiconductor and Storage | Description: POWER LED WHT 4000K 3535 |
Produkt ist nicht verfügbar |
||||||||||||||||||
TL2WU-DWJ,L | Toshiba Semiconductor and Storage | Description: LED WHITE 65MW CSP 0603 |
Produkt ist nicht verfügbar |
||||||||||||||||||
2SC4117-BL,LF | Toshiba Semiconductor and Storage |
Description: TRANS NPN 120V 0.1A SC70 Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 100MHz Supplier Device Package: SC-70 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 100 mW |
auf Bestellung 33000 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
74VHC02FT | Toshiba Semiconductor and Storage |
Description: IC GATE NOR 4CH 2-INP 14TSSOP Packaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: NOR Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 14-TSSOP Input Logic Level - High: 1.5V Input Logic Level - Low: 0.5V Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Part Status: Active Number of Circuits: 4 Current - Quiescent (Max): 2 µA |
auf Bestellung 12500 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
74VHCT04AFT | Toshiba Semiconductor and Storage |
Description: IC INVERTER 6CH 1-INP 14TSSOP Packaging: Tape & Reel (TR) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 1 Supplier Device Package: 14-TSSOP Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 7.7ns @ 5V, 50pF Part Status: Active Number of Circuits: 6 Current - Quiescent (Max): 2 µA |
auf Bestellung 2500 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
DF3A5.6LFU,LF | Toshiba Semiconductor and Storage | Description: TVS DIODE 3.5VWM CST3 |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||||||
DF5A5.6JE,LM | Toshiba Semiconductor and Storage | Description: TVS DIODE 2.5VWM ESV |
Produkt ist nicht verfügbar |
||||||||||||||||||
RN1103MFV,L3F | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 150MW VESM |
auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||||||
SSM3J327R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 3.9A SOT23F Packaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SOT-23F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V |
auf Bestellung 45000 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
SSM3J35CTC,L3F | Toshiba Semiconductor and Storage | Description: MOSFET P-CH 20V 250MA CST3C |
Produkt ist nicht verfügbar |
||||||||||||||||||
SSM3K15AFU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 100MA USM Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: USM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
SSM3K2615R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 2A SOT23F Packaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23F Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V |
auf Bestellung 84000 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
SSM3K318R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 2.5A SOT23F Packaging: Tape & Reel (TR) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 107mOhm @ 2A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: SOT-23F Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 30 V |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
SSM3K35CTC,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 250MA CST3C Packaging: Tape & Reel (TR) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 100µA Supplier Device Package: CST3C Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.34 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 10 V |
auf Bestellung 220000 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
SSM3K7002CFU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 170MA USM Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: USM Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V |
auf Bestellung 27000 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
SSM6N7002CFU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 60V 0.17A US6 Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 285mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 170mA Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 10V Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: US6 Part Status: Active |
auf Bestellung 33000 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
TBAV99,LM | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 100MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
auf Bestellung 18000 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
TC7SPN334L6X,LF | Toshiba Semiconductor and Storage |
Description: IC TRANSLTR UNIDIRECTIONAL 6MP6C Packaging: Tape & Reel (TR) Package / Case: 6-UFDFN Output Type: Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 6-MP6C (1.45x1.0) Channel Type: Unidirectional Translator Type: Voltage Level Channels per Circuit: 1 Voltage - VCCA: 1.1 V ~ 2.7 V Voltage - VCCB: 1.65 V ~ 3.6 V Part Status: Active Number of Circuits: 1 |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
TC7W53FU,LF | Toshiba Semiconductor and Storage |
Description: IC MUX/DEMUX 2:1 100OHM 8SSOP Packaging: Tape & Reel (TR) Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 100Ohm Supplier Device Package: 8-SSOP Voltage - Supply, Single (V+): 2V ~ 6V Voltage - Supply, Dual (V±): ±2V ~ 6V Part Status: Active Number of Channels: 2 |
auf Bestellung 21000 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
TC7WH08FK,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC GATE AND 2CH 2-INP 8SSOP Packaging: Tape & Reel (TR) Package / Case: 8-VFSOP (0.091", 2.30mm Width) Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 8-SSOP Input Logic Level - High: 1.5V Input Logic Level - Low: 0.5V Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF Part Status: Active Number of Circuits: 2 Current - Quiescent (Max): 2 µA |
auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
TC7WPB8306L8X,LF | Toshiba Semiconductor and Storage | Description: IC BUS SWITCH SPST DUAL CST8 |
auf Bestellung 6000 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||||||
TCR2LE18,LM(CT | Toshiba Semiconductor and Storage | Description: IC REG LINEAR 1.8V 200MA ESV |
Produkt ist nicht verfügbar |
||||||||||||||||||
TCR2LE25,LM(CT | Toshiba Semiconductor and Storage | Description: IC REG LINEAR 2.5V 200MA ESV |
Produkt ist nicht verfügbar |
||||||||||||||||||
TCR2LF18,LM(CT | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1.8V 200MA SMV Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 2 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SMV Voltage - Output (Min/Fixed): 1.8V Control Features: Enable Voltage Dropout (Max): 0.62V @ 150mA Protection Features: Over Current |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
TCR2LF30,LM(CT | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3V 200MA SMV Packaging: Tape & Reel (TR) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 2 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SMV Voltage - Output (Min/Fixed): 3V Control Features: Enable Part Status: Active Voltage Dropout (Max): 0.3V @ 150mA Protection Features: Over Current |
auf Bestellung 18000 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
TCR2LN18,LF | Toshiba Semiconductor and Storage | Description: IC REG LINEAR 1.8V 200MA 4SDFN |
Produkt ist nicht verfügbar |
||||||||||||||||||
TMBT3904,LM | Toshiba Semiconductor and Storage |
Description: TRANS NPN 50V 0.15A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 300MHz Supplier Device Package: SOT-23-3 Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 320 mW |
auf Bestellung 18000 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
TMBT3906,LM | Toshiba Semiconductor and Storage |
Description: TRANS PNP 50V 0.15A SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V Frequency - Transition: 250MHz Supplier Device Package: SOT-23-3 Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 320 mW |
auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
2SC4117-BL,LF | Toshiba Semiconductor and Storage |
Description: TRANS NPN 120V 0.1A SC70 Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 125°C (TJ) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 100MHz Supplier Device Package: SC-70 Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 120 V Power - Max: 100 mW |
auf Bestellung 35321 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
74VHC02FT | Toshiba Semiconductor and Storage |
Description: IC GATE NOR 4CH 2-INP 14TSSOP Packaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: NOR Gate Operating Temperature: -40°C ~ 125°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 14-TSSOP Input Logic Level - High: 1.5V Input Logic Level - Low: 0.5V Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF Part Status: Active Number of Circuits: 4 Current - Quiescent (Max): 2 µA |
auf Bestellung 14837 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
74VHCT04AFT | Toshiba Semiconductor and Storage |
Description: IC INVERTER 6CH 1-INP 14TSSOP Packaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 125°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 1 Supplier Device Package: 14-TSSOP Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 7.7ns @ 5V, 50pF Part Status: Active Number of Circuits: 6 Current - Quiescent (Max): 2 µA |
auf Bestellung 2567 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
DF3A5.6LFU,LF | Toshiba Semiconductor and Storage | Description: TVS DIODE 3.5VWM CST3 |
auf Bestellung 5848 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||||||
DF5A5.6JE,LM | Toshiba Semiconductor and Storage | Description: TVS DIODE 2.5VWM ESV |
auf Bestellung 2912 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||||||
RN1103MFV,L3F | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 150MW VESM |
auf Bestellung 15680 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||||||
SSM3J327R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 20V 3.9A SOT23F Packaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta) Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 1V @ 1mA Supplier Device Package: SOT-23F Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V |
auf Bestellung 49808 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
SSM3J35CTC,L3F | Toshiba Semiconductor and Storage | Description: MOSFET P-CH 20V 250MA CST3C |
auf Bestellung 9880 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
SSM3K15AFU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 30V 100MA USM Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 100µA Supplier Device Package: USM Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V |
auf Bestellung 8601 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
SSM3K2615R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 2A SOT23F Packaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: SOT-23F Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V |
auf Bestellung 87579 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
SSM3K318R,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 2.5A SOT23F Packaging: Cut Tape (CT) Package / Case: SOT-23-3 Flat Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta) Rds On (Max) @ Id, Vgs: 107mOhm @ 2A, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 2.8V @ 1mA Supplier Device Package: SOT-23F Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 30 V |
auf Bestellung 8621 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
SSM3K35CTC,L3F | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 20V 250MA CST3C Packaging: Cut Tape (CT) Package / Case: SC-101, SOT-883 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Ta) Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1V @ 100µA Supplier Device Package: CST3C Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 0.34 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 10 V |
auf Bestellung 241605 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
SSM3K7002CFU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 60V 170MA USM Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 170mA (Ta) Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V Power Dissipation (Max): 150mW (Ta) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: USM Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V |
auf Bestellung 30140 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
SSM6N7002CFU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET 2N-CH 60V 0.17A US6 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 285mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 170mA Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 10V Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: US6 Part Status: Active |
auf Bestellung 39416 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
TBAV99,LM | Toshiba Semiconductor and Storage |
Description: DIODE ARRAY GP 80V 100MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 4 ns Technology: Standard Diode Configuration: 1 Pair Series Connection Current - Average Rectified (Io) (per Diode): 100mA Supplier Device Package: SOT-23-3 Operating Temperature - Junction: 125°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 80 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA Current - Reverse Leakage @ Vr: 500 nA @ 80 V |
auf Bestellung 21251 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
TC7SPN334L6X,LF | Toshiba Semiconductor and Storage |
Description: IC TRANSLTR UNIDIRECTIONAL 6MP6C Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Output Type: Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 6-MP6C (1.45x1.0) Channel Type: Unidirectional Translator Type: Voltage Level Channels per Circuit: 1 Voltage - VCCA: 1.1 V ~ 2.7 V Voltage - VCCB: 1.65 V ~ 3.6 V Part Status: Active Number of Circuits: 1 |
auf Bestellung 9980 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
TC7W53FU,LF | Toshiba Semiconductor and Storage |
Description: IC MUX/DEMUX 2:1 100OHM 8SSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 100Ohm Supplier Device Package: 8-SSOP Voltage - Supply, Single (V+): 2V ~ 6V Voltage - Supply, Dual (V±): ±2V ~ 6V Part Status: Active Number of Channels: 2 |
auf Bestellung 23844 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
TC7WH08FK,LJ(CT | Toshiba Semiconductor and Storage |
Description: IC GATE AND 2CH 2-INP 8SSOP Packaging: Cut Tape (CT) Package / Case: 8-VFSOP (0.091", 2.30mm Width) Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 5.5V Current - Output High, Low: 8mA, 8mA Number of Inputs: 2 Supplier Device Package: 8-SSOP Input Logic Level - High: 1.5V Input Logic Level - Low: 0.5V Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF Part Status: Active Number of Circuits: 2 Current - Quiescent (Max): 2 µA |
auf Bestellung 9980 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
TC7WPB8306L8X,LF | Toshiba Semiconductor and Storage | Description: IC BUS SWITCH SPST DUAL CST8 |
auf Bestellung 6815 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||||||
TCR2LE18,LM(CT | Toshiba Semiconductor and Storage | Description: IC REG LINEAR 1.8V 200MA ESV |
auf Bestellung 1838 Stücke: Lieferzeit 21-28 Tag (e) |
||||||||||||||||||
TCR2LE25,LM(CT | Toshiba Semiconductor and Storage | Description: IC REG LINEAR 2.5V 200MA ESV |
Produkt ist nicht verfügbar |
||||||||||||||||||
TCR2LF18,LM(CT | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1.8V 200MA SMV Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 2 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SMV Voltage - Output (Min/Fixed): 1.8V Control Features: Enable Voltage Dropout (Max): 0.62V @ 150mA Protection Features: Over Current |
auf Bestellung 5969 Stücke: Lieferzeit 21-28 Tag (e) |
|
|||||||||||||||||
TCR2LF30,LM(CT | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3V 200MA SMV Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 2 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SMV Voltage - Output (Min/Fixed): 3V Control Features: Enable Part Status: Active Voltage Dropout (Max): 0.3V @ 150mA Protection Features: Over Current |
auf Bestellung 22759 Stücke: Lieferzeit 21-28 Tag (e) |
|
TL2WU-DWJ,L |
Hersteller: Toshiba Semiconductor and Storage
Description: LED WHITE 65MW CSP 0603
Description: LED WHITE 65MW CSP 0603
Produkt ist nicht verfügbar
TL1L4-DW0,L4A5B |
Hersteller: Toshiba Semiconductor and Storage
Description: POWER LED WHT 6500K 3535
Description: POWER LED WHT 6500K 3535
Produkt ist nicht verfügbar
TL1L4-NT0,L4A5B |
Hersteller: Toshiba Semiconductor and Storage
Description: POWER LED WHT 5700K 3535
Description: POWER LED WHT 5700K 3535
Produkt ist nicht verfügbar
TL1L4-NW0,L4A5B |
Hersteller: Toshiba Semiconductor and Storage
Description: POWER LED WHT 5000K 3535
Description: POWER LED WHT 5000K 3535
Produkt ist nicht verfügbar
TL1L4-WH0,L4A5B |
Hersteller: Toshiba Semiconductor and Storage
Description: POWER LED WHT 4000K 3535
Description: POWER LED WHT 4000K 3535
Produkt ist nicht verfügbar
TL2WU-DWJ,L |
Hersteller: Toshiba Semiconductor and Storage
Description: LED WHITE 65MW CSP 0603
Description: LED WHITE 65MW CSP 0603
Produkt ist nicht verfügbar
TL1L4-DW0,L4A5B |
Hersteller: Toshiba Semiconductor and Storage
Description: POWER LED WHT 6500K 3535
Description: POWER LED WHT 6500K 3535
Produkt ist nicht verfügbar
TL1L4-NT0,L4A5B |
Hersteller: Toshiba Semiconductor and Storage
Description: POWER LED WHT 5700K 3535
Description: POWER LED WHT 5700K 3535
Produkt ist nicht verfügbar
TL1L4-NW0,L4A5B |
Hersteller: Toshiba Semiconductor and Storage
Description: POWER LED WHT 5000K 3535
Description: POWER LED WHT 5000K 3535
Produkt ist nicht verfügbar
TL1L4-WH0,L4A5B |
Hersteller: Toshiba Semiconductor and Storage
Description: POWER LED WHT 4000K 3535
Description: POWER LED WHT 4000K 3535
Produkt ist nicht verfügbar
TL2WU-DWJ,L |
Hersteller: Toshiba Semiconductor and Storage
Description: LED WHITE 65MW CSP 0603
Description: LED WHITE 65MW CSP 0603
Produkt ist nicht verfügbar
2SC4117-BL,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 120V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 100 mW
Description: TRANS NPN 120V 0.1A SC70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 100 mW
auf Bestellung 33000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.091 EUR |
6000+ | 0.084 EUR |
9000+ | 0.07 EUR |
30000+ | 0.069 EUR |
74VHC02FT |
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NOR 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Description: IC GATE NOR 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
auf Bestellung 12500 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.23 EUR |
5000+ | 0.22 EUR |
12500+ | 0.2 EUR |
74VHCT04AFT |
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER 6CH 1-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 7.7ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
Description: IC INVERTER 6CH 1-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 7.7ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
auf Bestellung 2500 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.24 EUR |
DF3A5.6LFU,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.5VWM CST3
Description: TVS DIODE 3.5VWM CST3
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)DF5A5.6JE,LM |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 2.5VWM ESV
Description: TVS DIODE 2.5VWM ESV
Produkt ist nicht verfügbar
RN1103MFV,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 150MW VESM
Description: TRANS PREBIAS NPN 150MW VESM
auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)SSM3J327R,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 3.9A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
Description: MOSFET P-CH 20V 3.9A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
auf Bestellung 45000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.16 EUR |
9000+ | 0.13 EUR |
SSM3J35CTC,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 250MA CST3C
Description: MOSFET P-CH 20V 250MA CST3C
Produkt ist nicht verfügbar
SSM3K15AFU,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100MA USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: USM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V
Description: MOSFET N-CH 30V 100MA USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: USM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.091 EUR |
SSM3K2615R,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 2A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V
Description: MOSFET N-CH 60V 2A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V
auf Bestellung 84000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.36 EUR |
6000+ | 0.34 EUR |
9000+ | 0.32 EUR |
30000+ | 0.31 EUR |
75000+ | 0.3 EUR |
SSM3K318R,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 2.5A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 107mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 30 V
Description: MOSFET N-CH 60V 2.5A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 107mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.27 EUR |
SSM3K35CTC,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 250MA CST3C
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: CST3C
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 10 V
Description: MOSFET N-CH 20V 250MA CST3C
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: CST3C
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 10 V
auf Bestellung 220000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10000+ | 0.095 EUR |
30000+ | 0.093 EUR |
50000+ | 0.084 EUR |
100000+ | 0.074 EUR |
SSM3K7002CFU,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 170MA USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: USM
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
Description: MOSFET N-CH 60V 170MA USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: USM
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
auf Bestellung 27000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.074 EUR |
6000+ | 0.07 EUR |
9000+ | 0.06 EUR |
SSM6N7002CFU,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 60V 0.17A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 285mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 170mA
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 10V
Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: US6
Part Status: Active
Description: MOSFET 2N-CH 60V 0.17A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 285mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 170mA
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 10V
Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: US6
Part Status: Active
auf Bestellung 33000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.11 EUR |
6000+ | 0.099 EUR |
9000+ | 0.082 EUR |
30000+ | 0.081 EUR |
TBAV99,LM |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE ARRAY GP 80V 100MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 18000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.08 EUR |
6000+ | 0.075 EUR |
9000+ | 0.062 EUR |
TC7SPN334L6X,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC TRANSLTR UNIDIRECTIONAL 6MP6C
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Output Type: Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 6-MP6C (1.45x1.0)
Channel Type: Unidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 1.1 V ~ 2.7 V
Voltage - VCCB: 1.65 V ~ 3.6 V
Part Status: Active
Number of Circuits: 1
Description: IC TRANSLTR UNIDIRECTIONAL 6MP6C
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Output Type: Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 6-MP6C (1.45x1.0)
Channel Type: Unidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 1.1 V ~ 2.7 V
Voltage - VCCB: 1.65 V ~ 3.6 V
Part Status: Active
Number of Circuits: 1
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 0.3 EUR |
TC7W53FU,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX 2:1 100OHM 8SSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 100Ohm
Supplier Device Package: 8-SSOP
Voltage - Supply, Single (V+): 2V ~ 6V
Voltage - Supply, Dual (V±): ±2V ~ 6V
Part Status: Active
Number of Channels: 2
Description: IC MUX/DEMUX 2:1 100OHM 8SSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 100Ohm
Supplier Device Package: 8-SSOP
Voltage - Supply, Single (V+): 2V ~ 6V
Voltage - Supply, Dual (V±): ±2V ~ 6V
Part Status: Active
Number of Channels: 2
auf Bestellung 21000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.27 EUR |
6000+ | 0.26 EUR |
15000+ | 0.24 EUR |
TC7WH08FK,LJ(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE AND 2CH 2-INP 8SSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 8-SSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
Description: IC GATE AND 2CH 2-INP 8SSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 8-SSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.22 EUR |
6000+ | 0.21 EUR |
TC7WPB8306L8X,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH SPST DUAL CST8
Description: IC BUS SWITCH SPST DUAL CST8
auf Bestellung 6000 Stücke:
Lieferzeit 21-28 Tag (e)TCR2LE18,LM(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.8V 200MA ESV
Description: IC REG LINEAR 1.8V 200MA ESV
Produkt ist nicht verfügbar
TCR2LE25,LM(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.5V 200MA ESV
Description: IC REG LINEAR 2.5V 200MA ESV
Produkt ist nicht verfügbar
TCR2LF18,LM(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.8V 200MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Voltage Dropout (Max): 0.62V @ 150mA
Protection Features: Over Current
Description: IC REG LINEAR 1.8V 200MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Voltage Dropout (Max): 0.62V @ 150mA
Protection Features: Over Current
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.17 EUR |
TCR2LF30,LM(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3V 200MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.3V @ 150mA
Protection Features: Over Current
Description: IC REG LINEAR 3V 200MA SMV
Packaging: Tape & Reel (TR)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.3V @ 150mA
Protection Features: Over Current
auf Bestellung 18000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.17 EUR |
6000+ | 0.15 EUR |
15000+ | 0.14 EUR |
TCR2LN18,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.8V 200MA 4SDFN
Description: IC REG LINEAR 1.8V 200MA 4SDFN
Produkt ist nicht verfügbar
TMBT3904,LM |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 50V 0.15A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Description: TRANS NPN 50V 0.15A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 300MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
auf Bestellung 18000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.072 EUR |
6000+ | 0.068 EUR |
9000+ | 0.058 EUR |
TMBT3906,LM |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PNP 50V 0.15A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
Description: TRANS PNP 50V 0.15A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 320 mW
auf Bestellung 9000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.072 EUR |
6000+ | 0.068 EUR |
9000+ | 0.058 EUR |
2SC4117-BL,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 120V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 100 mW
Description: TRANS NPN 120V 0.1A SC70
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 100 mW
auf Bestellung 35321 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
48+ | 0.55 EUR |
70+ | 0.37 EUR |
144+ | 0.18 EUR |
500+ | 0.15 EUR |
1000+ | 0.11 EUR |
74VHC02FT |
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NOR 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Description: IC GATE NOR 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
auf Bestellung 14837 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 1.04 EUR |
34+ | 0.79 EUR |
37+ | 0.71 EUR |
100+ | 0.49 EUR |
250+ | 0.41 EUR |
500+ | 0.33 EUR |
1000+ | 0.26 EUR |
74VHCT04AFT |
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER 6CH 1-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 7.7ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
Description: IC INVERTER 6CH 1-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 7.7ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
auf Bestellung 2567 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
24+ | 1.09 EUR |
32+ | 0.81 EUR |
36+ | 0.73 EUR |
100+ | 0.51 EUR |
250+ | 0.43 EUR |
500+ | 0.35 EUR |
1000+ | 0.27 EUR |
DF3A5.6LFU,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.5VWM CST3
Description: TVS DIODE 3.5VWM CST3
auf Bestellung 5848 Stücke:
Lieferzeit 21-28 Tag (e)DF5A5.6JE,LM |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 2.5VWM ESV
Description: TVS DIODE 2.5VWM ESV
auf Bestellung 2912 Stücke:
Lieferzeit 21-28 Tag (e)RN1103MFV,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 150MW VESM
Description: TRANS PREBIAS NPN 150MW VESM
auf Bestellung 15680 Stücke:
Lieferzeit 21-28 Tag (e)SSM3J327R,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 3.9A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
Description: MOSFET P-CH 20V 3.9A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
auf Bestellung 49808 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
29+ | 0.91 EUR |
42+ | 0.63 EUR |
100+ | 0.32 EUR |
500+ | 0.26 EUR |
1000+ | 0.19 EUR |
SSM3J35CTC,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 250MA CST3C
Description: MOSFET P-CH 20V 250MA CST3C
auf Bestellung 9880 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.96 EUR |
34+ | 0.78 EUR |
100+ | 0.41 EUR |
500+ | 0.27 EUR |
1000+ | 0.18 EUR |
2000+ | 0.17 EUR |
5000+ | 0.15 EUR |
SSM3K15AFU,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100MA USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: USM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V
Description: MOSFET N-CH 30V 100MA USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: USM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V
auf Bestellung 8601 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
48+ | 0.55 EUR |
70+ | 0.37 EUR |
144+ | 0.18 EUR |
500+ | 0.15 EUR |
1000+ | 0.11 EUR |
SSM3K2615R,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 2A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V
Description: MOSFET N-CH 60V 2A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V
auf Bestellung 87579 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 1.07 EUR |
29+ | 0.91 EUR |
100+ | 0.63 EUR |
500+ | 0.49 EUR |
1000+ | 0.4 EUR |
SSM3K318R,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 2.5A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 107mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 30 V
Description: MOSFET N-CH 60V 2.5A SOT23F
Packaging: Cut Tape (CT)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 107mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 30 V
auf Bestellung 8621 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
27+ | 0.99 EUR |
35+ | 0.76 EUR |
100+ | 0.46 EUR |
500+ | 0.42 EUR |
1000+ | 0.29 EUR |
SSM3K35CTC,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 250MA CST3C
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: CST3C
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 10 V
Description: MOSFET N-CH 20V 250MA CST3C
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: CST3C
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 10 V
auf Bestellung 241605 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
35+ | 0.75 EUR |
52+ | 0.5 EUR |
106+ | 0.25 EUR |
500+ | 0.2 EUR |
1000+ | 0.14 EUR |
2000+ | 0.12 EUR |
5000+ | 0.11 EUR |
SSM3K7002CFU,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 170MA USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: USM
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
Description: MOSFET N-CH 60V 170MA USM
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: USM
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
auf Bestellung 30140 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
63+ | 0.42 EUR |
86+ | 0.3 EUR |
159+ | 0.16 EUR |
500+ | 0.13 EUR |
1000+ | 0.089 EUR |
SSM6N7002CFU,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 60V 0.17A US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 285mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 170mA
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 10V
Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: US6
Part Status: Active
Description: MOSFET 2N-CH 60V 0.17A US6
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 285mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 170mA
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 10V
Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: US6
Part Status: Active
auf Bestellung 39416 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
40+ | 0.65 EUR |
60+ | 0.44 EUR |
122+ | 0.21 EUR |
500+ | 0.18 EUR |
1000+ | 0.12 EUR |
TBAV99,LM |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
Description: DIODE ARRAY GP 80V 100MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 21251 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
56+ | 0.47 EUR |
79+ | 0.33 EUR |
163+ | 0.16 EUR |
500+ | 0.13 EUR |
1000+ | 0.093 EUR |
TC7SPN334L6X,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC TRANSLTR UNIDIRECTIONAL 6MP6C
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Output Type: Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 6-MP6C (1.45x1.0)
Channel Type: Unidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 1.1 V ~ 2.7 V
Voltage - VCCB: 1.65 V ~ 3.6 V
Part Status: Active
Number of Circuits: 1
Description: IC TRANSLTR UNIDIRECTIONAL 6MP6C
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Output Type: Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 6-MP6C (1.45x1.0)
Channel Type: Unidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 1.1 V ~ 2.7 V
Voltage - VCCB: 1.65 V ~ 3.6 V
Part Status: Active
Number of Circuits: 1
auf Bestellung 9980 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
23+ | 1.14 EUR |
29+ | 0.92 EUR |
31+ | 0.84 EUR |
100+ | 0.63 EUR |
250+ | 0.57 EUR |
500+ | 0.47 EUR |
1000+ | 0.35 EUR |
2500+ | 0.32 EUR |
TC7W53FU,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX 2:1 100OHM 8SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 100Ohm
Supplier Device Package: 8-SSOP
Voltage - Supply, Single (V+): 2V ~ 6V
Voltage - Supply, Dual (V±): ±2V ~ 6V
Part Status: Active
Number of Channels: 2
Description: IC MUX/DEMUX 2:1 100OHM 8SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 100Ohm
Supplier Device Package: 8-SSOP
Voltage - Supply, Single (V+): 2V ~ 6V
Voltage - Supply, Dual (V±): ±2V ~ 6V
Part Status: Active
Number of Channels: 2
auf Bestellung 23844 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.96 EUR |
34+ | 0.78 EUR |
37+ | 0.71 EUR |
100+ | 0.53 EUR |
250+ | 0.48 EUR |
500+ | 0.4 EUR |
1000+ | 0.3 EUR |
TC7WH08FK,LJ(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE AND 2CH 2-INP 8SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 8-SSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
Description: IC GATE AND 2CH 2-INP 8SSOP
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 8-SSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
auf Bestellung 9980 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
27+ | 0.99 EUR |
36+ | 0.74 EUR |
40+ | 0.67 EUR |
100+ | 0.46 EUR |
250+ | 0.39 EUR |
500+ | 0.32 EUR |
1000+ | 0.24 EUR |
TC7WPB8306L8X,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH SPST DUAL CST8
Description: IC BUS SWITCH SPST DUAL CST8
auf Bestellung 6815 Stücke:
Lieferzeit 21-28 Tag (e)TCR2LE18,LM(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.8V 200MA ESV
Description: IC REG LINEAR 1.8V 200MA ESV
auf Bestellung 1838 Stücke:
Lieferzeit 21-28 Tag (e)TCR2LE25,LM(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.5V 200MA ESV
Description: IC REG LINEAR 2.5V 200MA ESV
Produkt ist nicht verfügbar
TCR2LF18,LM(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.8V 200MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Voltage Dropout (Max): 0.62V @ 150mA
Protection Features: Over Current
Description: IC REG LINEAR 1.8V 200MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 1.8V
Control Features: Enable
Voltage Dropout (Max): 0.62V @ 150mA
Protection Features: Over Current
auf Bestellung 5969 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
29+ | 0.91 EUR |
39+ | 0.67 EUR |
45+ | 0.59 EUR |
100+ | 0.38 EUR |
250+ | 0.32 EUR |
500+ | 0.25 EUR |
1000+ | 0.19 EUR |
TCR2LF30,LM(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3V 200MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.3V @ 150mA
Protection Features: Over Current
Description: IC REG LINEAR 3V 200MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.3V @ 150mA
Protection Features: Over Current
auf Bestellung 22759 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
29+ | 0.91 EUR |
39+ | 0.68 EUR |
44+ | 0.59 EUR |
100+ | 0.38 EUR |
250+ | 0.32 EUR |
500+ | 0.25 EUR |
1000+ | 0.2 EUR |