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TCR2LF36,LM(CT TCR2LF36,LM(CT Toshiba Semiconductor and Storage docget.jsp?did=28807&prodName=TCR2LE31 Description: IC REG LINEAR 3.6V 200MA SMV
auf Bestellung 2990 Stücke:
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TCR5AM055,LF TCR5AM055,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TCR5AM055 Description: IC REG LDO 0.55V 0.5A 5DFN
Produkt ist nicht verfügbar
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TCR5AM06,LF TCR5AM06,LF Toshiba Semiconductor and Storage docget.jsp?did=29906&prodName=TCR5AM12 Description: IC REG LINEAR 0.6V 500MA 5DFNB
Produkt ist nicht verfügbar
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TCR5AM065,LF TCR5AM065,LF Toshiba Semiconductor and Storage docget.jsp?did=29906&prodName=TCR5AM12 Description: IC REG LINEAR 0.65V 500MA 5DFNB
Produkt ist nicht verfügbar
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TCR5AM07,LF TCR5AM07,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TCR5AM055 Description: IC REG LDO 0.7V 0.5A 5DFN
Produkt ist nicht verfügbar
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TCR5AM075,LF TCR5AM075,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TCR5AM055 Description: IC REG LDO 0.75V 0.5A 5DFN
Produkt ist nicht verfügbar
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TCR5AM08,LF TCR5AM08,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TCR5AM055 Description: IC REG LDO 0.8V 0.5A 5DFN
Produkt ist nicht verfügbar
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TCR5AM085,LF TCR5AM085,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TCR5AM055 Description: IC REG LDO 0.85V 0.5A 5DFN
Produkt ist nicht verfügbar
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TCR5AM09,LF TCR5AM09,LF Toshiba Semiconductor and Storage TCR5AM12_datasheet_en_20151215.pdf?did=29906&prodName=TCR5AM12 Description: IC REG LINEAR 0.9V 500MA 5DFNB
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 55 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 0.9V
Control Features: Enable
PSRR: 70dB ~ 40dB (1kHz ~ 10Hz)
Voltage Dropout (Max): 0.23V @ 500mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Current - Supply (Max): 68 µA
auf Bestellung 4099 Stücke:
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25+0.7 EUR
30+0.6 EUR
32+0.56 EUR
100+0.45 EUR
250+0.42 EUR
500+0.35 EUR
1000+0.27 EUR
2500+0.25 EUR
Mindestbestellmenge: 25
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TCR5AM095,LF TCR5AM095,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TCR5AM055 Description: IC REG LDO 0.95V 0.5A 5DFN
Produkt ist nicht verfügbar
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TCR5AM105,LF TCR5AM105,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TCR5AM055 Description: IC REG LDO 1.05V 0.5A 5DFN
Produkt ist nicht verfügbar
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TC75W55FU,LF TC75W55FU,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC75W55FU Description: IC OPAMP GP 160KHZ SM8-8
auf Bestellung 2989 Stücke:
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TCK302G,LF TCK302G,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TCK302G Description: IC POWER DIST LOAD SWITCH 9WCSP
auf Bestellung 10000 Stücke:
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TCR2LE10,LM(CT TCR2LE10,LM(CT Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TCR2LE10 Description: IC REG LDO 1V 0.2A ESV
auf Bestellung 8000 Stücke:
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TCR2LE27,LM(CT TCR2LE27,LM(CT Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TCR2LE10 Description: IC REG LDO 2.7V 0.2A ESV
auf Bestellung 8000 Stücke:
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TCR2LE36,LM(CT TCR2LE36,LM(CT Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TCR2LE10 Description: IC REG LDO 3.6V 0.2A ESV
auf Bestellung 7990 Stücke:
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TCR2LF10,LM(CT TCR2LF10,LM(CT Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TCR2LF30 Description: IC REG LDO 1V 0.2A SMV
auf Bestellung 5740 Stücke:
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RN1110,LF(CT RN1110,LF(CT Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1111 Description: TRANS PREBIAS NPN 0.1W SSM
Produkt ist nicht verfügbar
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DF2B5M4SL,L3F DF2B5M4SL,L3F Toshiba Semiconductor and Storage DF2B5M4SL_datasheet_en_20171221.pdf?did=30755&prodName=DF2B5M4SL Description: TVS DIODE 3.6VWM 24VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 30W
Power Line Protection: No
auf Bestellung 80000 Stücke:
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10000+0.078 EUR
20000+0.063 EUR
Mindestbestellmenge: 10000
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DF2B6M4SL,L3F DF2B6M4SL,L3F Toshiba Semiconductor and Storage docget.jsp?did=14659 Description: TVS DIODE 5.5VWM 25VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 25V
Power - Peak Pulse: 30W
Power Line Protection: No
Produkt ist nicht verfügbar
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DF2B7M3SL,L3F DF2B7M3SL,L3F Toshiba Semiconductor and Storage DF2B7M3SL_datasheet_en_20180123.pdf?did=29947&prodName=DF2B7M3SL Description: TVS DIODE 5.5VWM 20VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 50W
Power Line Protection: No
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.078 EUR
30000+0.077 EUR
Mindestbestellmenge: 10000
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DF2S5.1ASL,L3F DF2S5.1ASL,L3F Toshiba Semiconductor and Storage DF2S5.1ASL_datasheet_en_20151211.pdf?did=30760&prodName=DF2S5.1ASL Description: TVS DIODE 1.5VWM SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Voltage - Reverse Standoff (Typ): 1.5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4.8V
Power Line Protection: No
Produkt ist nicht verfügbar
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DF2S5.6ASL,L3F DF2S5.6ASL,L3F Toshiba Semiconductor and Storage DF2S5.6ASL_datasheet_en_20151211.pdf?did=30761&prodName=DF2S5.6ASL Description: TVS DIODE 3.5VWM SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 40pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Power Line Protection: No
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.041 EUR
Mindestbestellmenge: 10000
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DF2S6.2ASL,L3F DF2S6.2ASL,L3F Toshiba Semiconductor and Storage DF2S6.2ASL_datasheet_en_20151221.pdf?did=30781&prodName=DF2S6.2ASL Description: TVS DIODE 5VWM SL2-2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 32pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Part Status: Active
auf Bestellung 60000 Stücke:
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10000+0.042 EUR
30000+0.039 EUR
50000+0.033 EUR
Mindestbestellmenge: 10000
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DF2S6.8ASL,L3F DF2S6.8ASL,L3F Toshiba Semiconductor and Storage DF2S6.8ASL_datasheet_en_20151221.pdf?did=30783&prodName=DF2S6.8ASL Description: TVS DIODE 5VWM SL2-2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
Part Status: Active
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.041 EUR
30000+0.04 EUR
50000+0.036 EUR
100000+0.032 EUR
Mindestbestellmenge: 10000
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DF2S8.2ASL,L3F DF2S8.2ASL,L3F Toshiba Semiconductor and Storage DF2S8.2ASL.pdf Description: TVS DIODE 6.55VWM SL2-2
auf Bestellung 10000 Stücke:
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DF2B5M4SL,L3F DF2B5M4SL,L3F Toshiba Semiconductor and Storage DF2B5M4SL_datasheet_en_20171221.pdf?did=30755&prodName=DF2B5M4SL Description: TVS DIODE 3.6VWM 24VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 30W
Power Line Protection: No
auf Bestellung 88268 Stücke:
Lieferzeit 10-14 Tag (e)
53+0.33 EUR
76+0.23 EUR
175+0.1 EUR
500+0.095 EUR
1000+0.089 EUR
2000+0.088 EUR
5000+0.086 EUR
Mindestbestellmenge: 53
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DF2B6M4SL,L3F DF2B6M4SL,L3F Toshiba Semiconductor and Storage docget.jsp?did=14659 Description: TVS DIODE 5.5VWM 25VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 25V
Power - Peak Pulse: 30W
Power Line Protection: No
auf Bestellung 11004 Stücke:
Lieferzeit 10-14 Tag (e)
53+0.33 EUR
80+0.22 EUR
175+0.1 EUR
500+0.094 EUR
1000+0.088 EUR
2000+0.086 EUR
5000+0.084 EUR
Mindestbestellmenge: 53
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DF2B7M3SL,L3F DF2B7M3SL,L3F Toshiba Semiconductor and Storage DF2B7M3SL_datasheet_en_20180123.pdf?did=29947&prodName=DF2B7M3SL Description: TVS DIODE 5.5VWM 20VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 50W
Power Line Protection: No
auf Bestellung 40659 Stücke:
Lieferzeit 10-14 Tag (e)
34+0.53 EUR
48+0.37 EUR
100+0.19 EUR
500+0.15 EUR
1000+0.11 EUR
2000+0.094 EUR
5000+0.09 EUR
Mindestbestellmenge: 34
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DF2S5.1ASL,L3F DF2S5.1ASL,L3F Toshiba Semiconductor and Storage DF2S5.1ASL_datasheet_en_20151211.pdf?did=30760&prodName=DF2S5.1ASL Description: TVS DIODE 1.5VWM SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Voltage - Reverse Standoff (Typ): 1.5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4.8V
Power Line Protection: No
auf Bestellung 1365 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.32 EUR
82+0.22 EUR
168+0.11 EUR
500+0.088 EUR
1000+0.061 EUR
Mindestbestellmenge: 56
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DF2S5.6ASL,L3F DF2S5.6ASL,L3F Toshiba Semiconductor and Storage DF2S5.6ASL_datasheet_en_20151211.pdf?did=30761&prodName=DF2S5.6ASL Description: TVS DIODE 3.5VWM SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 40pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Power Line Protection: No
auf Bestellung 38256 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.32 EUR
80+0.22 EUR
164+0.11 EUR
500+0.09 EUR
1000+0.062 EUR
2000+0.054 EUR
5000+0.05 EUR
Mindestbestellmenge: 56
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DF2S6.2ASL,L3F DF2S6.2ASL,L3F Toshiba Semiconductor and Storage DF2S6.2ASL_datasheet_en_20151221.pdf?did=30781&prodName=DF2S6.2ASL Description: TVS DIODE 5VWM SL2-2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 32pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Part Status: Active
auf Bestellung 77945 Stücke:
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59+0.3 EUR
83+0.21 EUR
153+0.12 EUR
500+0.09 EUR
1000+0.063 EUR
2000+0.052 EUR
5000+0.049 EUR
Mindestbestellmenge: 59
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DF2S6.8ASL,L3F DF2S6.8ASL,L3F Toshiba Semiconductor and Storage DF2S6.8ASL_datasheet_en_20151221.pdf?did=30783&prodName=DF2S6.8ASL Description: TVS DIODE 5VWM SL2-2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
Part Status: Active
auf Bestellung 117644 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.32 EUR
81+0.22 EUR
166+0.11 EUR
500+0.089 EUR
1000+0.062 EUR
2000+0.053 EUR
5000+0.049 EUR
Mindestbestellmenge: 56
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DF2S8.2ASL,L3F DF2S8.2ASL,L3F Toshiba Semiconductor and Storage DF2S8.2ASL.pdf Description: TVS DIODE 6.55VWM SL2-2
auf Bestellung 20000 Stücke:
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DF2S8.2ASL,L3F DF2S8.2ASL,L3F Toshiba Semiconductor and Storage DF2S8.2ASL.pdf Description: TVS DIODE 6.55VWM SL2-2
auf Bestellung 20000 Stücke:
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TMPM333FWFG(C,J) TMPM333FWFG(C,J) Toshiba Semiconductor and Storage docget.jsp?did=6315&prodName=TMPM333FWFG Description: IC MCU 32BIT 128KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -20°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: I2C, SIO, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 78
DigiKey Programmable: Not Verified
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.41 EUR
10+6.15 EUR
25+5.71 EUR
200+4.92 EUR
Mindestbestellmenge: 3
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TMPM333FYFG(C) TMPM333FYFG(C) Toshiba Semiconductor and Storage docget.jsp?did=6315&prodName=TMPM333FWFG Description: IC MCU 32BIT 256KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -20°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: I2C, SIO, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Active
Number of I/O: 78
DigiKey Programmable: Not Verified
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.48 EUR
10+5.38 EUR
25+5 EUR
200+4.29 EUR
Mindestbestellmenge: 3
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TMPM380FYFG(C) TMPM380FYFG(C) Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TMPM380FWFG Description: IC MCU 32BIT 256KB FLASH 100LQFP
auf Bestellung 360 Stücke:
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DF10G5M4N,LF DF10G5M4N,LF Toshiba Semiconductor and Storage DF10G5M4N_datasheet_en_20220328.pdf?did=30751&prodName=DF10G5M4N Description: TVS DIODE 3.6VWM 24VC 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: 10-DFN (2.5x1)
Bidirectional Channels: 4
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 30W
Power Line Protection: No
Produkt ist nicht verfügbar
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DF10G6M4N,LF DF10G6M4N,LF Toshiba Semiconductor and Storage DF10G6M4N_datasheet_en_20220818.pdf?did=30754&prodName=DF10G6M4N Description: TVS DIODE 5.5VWM 25VC 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 10-DFN (2.5x1)
Bidirectional Channels: 4
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 25V
Power - Peak Pulse: 30W
Power Line Protection: No
Produkt ist nicht verfügbar
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DF10G5M4N,LF DF10G5M4N,LF Toshiba Semiconductor and Storage DF10G5M4N_datasheet_en_20220328.pdf?did=30751&prodName=DF10G5M4N Description: TVS DIODE 3.6VWM 24VC 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: 10-DFN (2.5x1)
Bidirectional Channels: 4
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 30W
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DF10G6M4N,LF DF10G6M4N,LF Toshiba Semiconductor and Storage DF10G6M4N_datasheet_en_20220818.pdf?did=30754&prodName=DF10G6M4N Description: TVS DIODE 5.5VWM 25VC 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 10-DFN (2.5x1)
Bidirectional Channels: 4
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 25V
Power - Peak Pulse: 30W
Power Line Protection: No
Produkt ist nicht verfügbar
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TC7WH125FE,LJ(CT Toshiba Semiconductor and Storage Description: IC BUS BUFFER DUAL NONINV 8SSOP
Produkt ist nicht verfügbar
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SSM6J507NU,LF SSM6J507NU,LF Toshiba Semiconductor and Storage docget.jsp?did=30372&prodName=SSM6J507NU Description: MOSFET P-CH 30V 10A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 6-UDFNB (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 15 V
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.24 EUR
6000+0.22 EUR
9000+0.2 EUR
21000+0.19 EUR
Mindestbestellmenge: 3000
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SSM6J507NU,LF SSM6J507NU,LF Toshiba Semiconductor and Storage docget.jsp?did=30372&prodName=SSM6J507NU Description: MOSFET P-CH 30V 10A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 6-UDFNB (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 15 V
auf Bestellung 49192 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.77 EUR
31+0.58 EUR
100+0.41 EUR
500+0.32 EUR
1000+0.28 EUR
Mindestbestellmenge: 23
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TPH2R608NH,L1Q TPH2R608NH,L1Q Toshiba Semiconductor and Storage docget.jsp?did=15733&prodName=TPH2R608NH Description: MOSFET N-CH 75V 150A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 37.5 V
auf Bestellung 13356 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.45 EUR
10+1.87 EUR
100+1.36 EUR
500+1.08 EUR
1000+1.02 EUR
Mindestbestellmenge: 8
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TPH2900ENH,L1Q TPH2900ENH,L1Q Toshiba Semiconductor and Storage docget.jsp?did=14485&prodName=TPH2900ENH Description: MOSFET N-CH 200V 33A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 16.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 100 V
auf Bestellung 11941 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.68 EUR
10+3.25 EUR
100+2.26 EUR
500+1.93 EUR
Mindestbestellmenge: 4
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TK8P60W5,RVQ TK8P60W5,RVQ Toshiba Semiconductor and Storage docget.jsp?did=14496&prodName=TK8P60W5 Description: MOSFET N-CH 600V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 560mOhm @ 4A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 400µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V
auf Bestellung 2855 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.52 EUR
10+1.86 EUR
100+1.51 EUR
Mindestbestellmenge: 7
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TK9P65W,RQ TK9P65W,RQ Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TK9P65W Description: MOSFET N-CH 650V 9.3A DPAK
auf Bestellung 4000 Stücke:
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TK14G65W,RQ TK14G65W,RQ Toshiba Semiconductor and Storage docget.jsp?did=14506&prodName=TK14G65W Description: MOSFET N-CH 650V 13.7A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 690µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
auf Bestellung 1919 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.45 EUR
10+3.2 EUR
100+2.42 EUR
500+2.15 EUR
Mindestbestellmenge: 4
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TK14G65W5,RQ TK14G65W5,RQ Toshiba Semiconductor and Storage docget.jsp?did=14505&prodName=TK14G65W5 Description: MOSFET N-CH 650V 13.7A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 690µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TK20V60W5,LVQ TK20V60W5,LVQ Toshiba Semiconductor and Storage TK20V60W5_datasheet_en_20160108.pdf?did=28825&prodName=TK20V60W5 Description: MOSFET N-CH 600V 20A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
auf Bestellung 4812 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.46 EUR
10+4.24 EUR
100+2.99 EUR
500+2.45 EUR
1000+2.28 EUR
Mindestbestellmenge: 3
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TK6P65W,RQ TK6P65W,RQ Toshiba Semiconductor and Storage Description: MOSFET N-CH 650V 5.8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2.9A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V
auf Bestellung 2008 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.16 EUR
10+1.76 EUR
100+1.37 EUR
500+1.16 EUR
1000+0.95 EUR
Mindestbestellmenge: 9
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TK7P65W,RQ TK7P65W,RQ Toshiba Semiconductor and Storage Description: MOSFET N-CH 650V 6.8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.4A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V
auf Bestellung 1408 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.46 EUR
10+2.05 EUR
100+1.63 EUR
500+1.38 EUR
1000+1.17 EUR
Mindestbestellmenge: 8
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TK9P65W,RQ TK9P65W,RQ Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TK9P65W Description: MOSFET N-CH 650V 9.3A DPAK
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
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TPH2R608NH,L1Q TPH2R608NH,L1Q Toshiba Semiconductor and Storage docget.jsp?did=15733&prodName=TPH2R608NH Description: MOSFET N-CH 75V 150A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 37.5 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.84 EUR
Mindestbestellmenge: 5000
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TPH2900ENH,L1Q TPH2900ENH,L1Q Toshiba Semiconductor and Storage docget.jsp?did=14485&prodName=TPH2900ENH Description: MOSFET N-CH 200V 33A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 16.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 100 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+1.58 EUR
Mindestbestellmenge: 5000
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TK8P60W5,RVQ TK8P60W5,RVQ Toshiba Semiconductor and Storage docget.jsp?did=14496&prodName=TK8P60W5 Description: MOSFET N-CH 600V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 560mOhm @ 4A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 400µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+1.25 EUR
Mindestbestellmenge: 2000
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TK9P65W,RQ TK9P65W,RQ Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TK9P65W Description: MOSFET N-CH 650V 9.3A DPAK
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
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TK14G65W,RQ TK14G65W,RQ Toshiba Semiconductor and Storage docget.jsp?did=14506&prodName=TK14G65W Description: MOSFET N-CH 650V 13.7A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 690µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+2.04 EUR
Mindestbestellmenge: 1000
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TCR2LF36,LM(CT docget.jsp?did=28807&prodName=TCR2LE31
TCR2LF36,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.6V 200MA SMV
auf Bestellung 2990 Stücke:
Lieferzeit 10-14 Tag (e)
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TCR5AM055,LF docget.jsp?type=datasheet&lang=en&pid=TCR5AM055
TCR5AM055,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LDO 0.55V 0.5A 5DFN
Produkt ist nicht verfügbar
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TCR5AM06,LF docget.jsp?did=29906&prodName=TCR5AM12
TCR5AM06,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 0.6V 500MA 5DFNB
Produkt ist nicht verfügbar
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TCR5AM065,LF docget.jsp?did=29906&prodName=TCR5AM12
TCR5AM065,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 0.65V 500MA 5DFNB
Produkt ist nicht verfügbar
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TCR5AM07,LF docget.jsp?type=datasheet&lang=en&pid=TCR5AM055
TCR5AM07,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LDO 0.7V 0.5A 5DFN
Produkt ist nicht verfügbar
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TCR5AM075,LF docget.jsp?type=datasheet&lang=en&pid=TCR5AM055
TCR5AM075,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LDO 0.75V 0.5A 5DFN
Produkt ist nicht verfügbar
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TCR5AM08,LF docget.jsp?type=datasheet&lang=en&pid=TCR5AM055
TCR5AM08,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LDO 0.8V 0.5A 5DFN
Produkt ist nicht verfügbar
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TCR5AM085,LF docget.jsp?type=datasheet&lang=en&pid=TCR5AM055
TCR5AM085,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LDO 0.85V 0.5A 5DFN
Produkt ist nicht verfügbar
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TCR5AM09,LF TCR5AM12_datasheet_en_20151215.pdf?did=29906&prodName=TCR5AM12
TCR5AM09,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 0.9V 500MA 5DFNB
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 55 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 0.9V
Control Features: Enable
PSRR: 70dB ~ 40dB (1kHz ~ 10Hz)
Voltage Dropout (Max): 0.23V @ 500mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Current - Supply (Max): 68 µA
auf Bestellung 4099 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.7 EUR
30+0.6 EUR
32+0.56 EUR
100+0.45 EUR
250+0.42 EUR
500+0.35 EUR
1000+0.27 EUR
2500+0.25 EUR
Mindestbestellmenge: 25
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TCR5AM095,LF docget.jsp?type=datasheet&lang=en&pid=TCR5AM055
TCR5AM095,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LDO 0.95V 0.5A 5DFN
Produkt ist nicht verfügbar
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TCR5AM105,LF docget.jsp?type=datasheet&lang=en&pid=TCR5AM055
TCR5AM105,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LDO 1.05V 0.5A 5DFN
Produkt ist nicht verfügbar
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TC75W55FU,LF docget.jsp?type=datasheet&lang=en&pid=TC75W55FU
TC75W55FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC OPAMP GP 160KHZ SM8-8
auf Bestellung 2989 Stücke:
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TCK302G,LF docget.jsp?type=datasheet&lang=en&pid=TCK302G
TCK302G,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC POWER DIST LOAD SWITCH 9WCSP
auf Bestellung 10000 Stücke:
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TCR2LE10,LM(CT docget.jsp?type=datasheet&lang=en&pid=TCR2LE10
TCR2LE10,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LDO 1V 0.2A ESV
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TCR2LE27,LM(CT docget.jsp?type=datasheet&lang=en&pid=TCR2LE10
TCR2LE27,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LDO 2.7V 0.2A ESV
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TCR2LE36,LM(CT docget.jsp?type=datasheet&lang=en&pid=TCR2LE10
TCR2LE36,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LDO 3.6V 0.2A ESV
auf Bestellung 7990 Stücke:
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TCR2LF10,LM(CT docget.jsp?type=datasheet&lang=en&pid=TCR2LF30
TCR2LF10,LM(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LDO 1V 0.2A SMV
auf Bestellung 5740 Stücke:
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RN1110,LF(CT docget.jsp?type=datasheet&lang=en&pid=RN1111
RN1110,LF(CT
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.1W SSM
Produkt ist nicht verfügbar
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DF2B5M4SL,L3F DF2B5M4SL_datasheet_en_20171221.pdf?did=30755&prodName=DF2B5M4SL
DF2B5M4SL,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.6VWM 24VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 30W
Power Line Protection: No
auf Bestellung 80000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.078 EUR
20000+0.063 EUR
Mindestbestellmenge: 10000
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DF2B6M4SL,L3F docget.jsp?did=14659
DF2B6M4SL,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 25VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 25V
Power - Peak Pulse: 30W
Power Line Protection: No
Produkt ist nicht verfügbar
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DF2B7M3SL,L3F DF2B7M3SL_datasheet_en_20180123.pdf?did=29947&prodName=DF2B7M3SL
DF2B7M3SL,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 20VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 50W
Power Line Protection: No
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.078 EUR
30000+0.077 EUR
Mindestbestellmenge: 10000
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DF2S5.1ASL,L3F DF2S5.1ASL_datasheet_en_20151211.pdf?did=30760&prodName=DF2S5.1ASL
DF2S5.1ASL,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 1.5VWM SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Voltage - Reverse Standoff (Typ): 1.5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4.8V
Power Line Protection: No
Produkt ist nicht verfügbar
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DF2S5.6ASL,L3F DF2S5.6ASL_datasheet_en_20151211.pdf?did=30761&prodName=DF2S5.6ASL
DF2S5.6ASL,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.5VWM SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 40pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Power Line Protection: No
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.041 EUR
Mindestbestellmenge: 10000
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DF2S6.2ASL,L3F DF2S6.2ASL_datasheet_en_20151221.pdf?did=30781&prodName=DF2S6.2ASL
DF2S6.2ASL,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM SL2-2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 32pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Part Status: Active
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.042 EUR
30000+0.039 EUR
50000+0.033 EUR
Mindestbestellmenge: 10000
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DF2S6.8ASL,L3F DF2S6.8ASL_datasheet_en_20151221.pdf?did=30783&prodName=DF2S6.8ASL
DF2S6.8ASL,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM SL2-2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
Part Status: Active
auf Bestellung 100000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10000+0.041 EUR
30000+0.04 EUR
50000+0.036 EUR
100000+0.032 EUR
Mindestbestellmenge: 10000
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DF2S8.2ASL,L3F DF2S8.2ASL.pdf
DF2S8.2ASL,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 6.55VWM SL2-2
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
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DF2B5M4SL,L3F DF2B5M4SL_datasheet_en_20171221.pdf?did=30755&prodName=DF2B5M4SL
DF2B5M4SL,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.6VWM 24VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 30W
Power Line Protection: No
auf Bestellung 88268 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
76+0.23 EUR
175+0.1 EUR
500+0.095 EUR
1000+0.089 EUR
2000+0.088 EUR
5000+0.086 EUR
Mindestbestellmenge: 53
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DF2B6M4SL,L3F docget.jsp?did=14659
DF2B6M4SL,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 25VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 25V
Power - Peak Pulse: 30W
Power Line Protection: No
auf Bestellung 11004 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
80+0.22 EUR
175+0.1 EUR
500+0.094 EUR
1000+0.088 EUR
2000+0.086 EUR
5000+0.084 EUR
Mindestbestellmenge: 53
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DF2B7M3SL,L3F DF2B7M3SL_datasheet_en_20180123.pdf?did=29947&prodName=DF2B7M3SL
DF2B7M3SL,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 20VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 50W
Power Line Protection: No
auf Bestellung 40659 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
48+0.37 EUR
100+0.19 EUR
500+0.15 EUR
1000+0.11 EUR
2000+0.094 EUR
5000+0.09 EUR
Mindestbestellmenge: 34
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DF2S5.1ASL,L3F DF2S5.1ASL_datasheet_en_20151211.pdf?did=30760&prodName=DF2S5.1ASL
DF2S5.1ASL,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 1.5VWM SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Voltage - Reverse Standoff (Typ): 1.5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4.8V
Power Line Protection: No
auf Bestellung 1365 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
82+0.22 EUR
168+0.11 EUR
500+0.088 EUR
1000+0.061 EUR
Mindestbestellmenge: 56
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DF2S5.6ASL,L3F DF2S5.6ASL_datasheet_en_20151211.pdf?did=30761&prodName=DF2S5.6ASL
DF2S5.6ASL,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.5VWM SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 40pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Power Line Protection: No
auf Bestellung 38256 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
80+0.22 EUR
164+0.11 EUR
500+0.09 EUR
1000+0.062 EUR
2000+0.054 EUR
5000+0.05 EUR
Mindestbestellmenge: 56
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DF2S6.2ASL,L3F DF2S6.2ASL_datasheet_en_20151221.pdf?did=30781&prodName=DF2S6.2ASL
DF2S6.2ASL,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM SL2-2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 32pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Part Status: Active
auf Bestellung 77945 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.3 EUR
83+0.21 EUR
153+0.12 EUR
500+0.09 EUR
1000+0.063 EUR
2000+0.052 EUR
5000+0.049 EUR
Mindestbestellmenge: 59
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DF2S6.8ASL,L3F DF2S6.8ASL_datasheet_en_20151221.pdf?did=30783&prodName=DF2S6.8ASL
DF2S6.8ASL,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM SL2-2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
Part Status: Active
auf Bestellung 117644 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
81+0.22 EUR
166+0.11 EUR
500+0.089 EUR
1000+0.062 EUR
2000+0.053 EUR
5000+0.049 EUR
Mindestbestellmenge: 56
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DF2S8.2ASL,L3F DF2S8.2ASL.pdf
DF2S8.2ASL,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 6.55VWM SL2-2
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
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DF2S8.2ASL,L3F DF2S8.2ASL.pdf
DF2S8.2ASL,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 6.55VWM SL2-2
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
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TMPM333FWFG(C,J) docget.jsp?did=6315&prodName=TMPM333FWFG
TMPM333FWFG(C,J)
Hersteller: Toshiba Semiconductor and Storage
Description: IC MCU 32BIT 128KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 128KB (128K x 8)
RAM Size: 8K x 8
Operating Temperature: -20°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: I2C, SIO, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Number of I/O: 78
DigiKey Programmable: Not Verified
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.41 EUR
10+6.15 EUR
25+5.71 EUR
200+4.92 EUR
Mindestbestellmenge: 3
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TMPM333FYFG(C) docget.jsp?did=6315&prodName=TMPM333FWFG
TMPM333FYFG(C)
Hersteller: Toshiba Semiconductor and Storage
Description: IC MCU 32BIT 256KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -20°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x10b
Core Size: 32-Bit
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: I2C, SIO, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Active
Number of I/O: 78
DigiKey Programmable: Not Verified
auf Bestellung 200 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.48 EUR
10+5.38 EUR
25+5 EUR
200+4.29 EUR
Mindestbestellmenge: 3
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TMPM380FYFG(C) docget.jsp?type=datasheet&lang=en&pid=TMPM380FWFG
TMPM380FYFG(C)
Hersteller: Toshiba Semiconductor and Storage
Description: IC MCU 32BIT 256KB FLASH 100LQFP
auf Bestellung 360 Stücke:
Lieferzeit 10-14 Tag (e)
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DF10G5M4N,LF DF10G5M4N_datasheet_en_20220328.pdf?did=30751&prodName=DF10G5M4N
DF10G5M4N,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.6VWM 24VC 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: 10-DFN (2.5x1)
Bidirectional Channels: 4
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 30W
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DF10G6M4N,LF DF10G6M4N_datasheet_en_20220818.pdf?did=30754&prodName=DF10G6M4N
DF10G6M4N,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 25VC 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 10-DFN (2.5x1)
Bidirectional Channels: 4
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 25V
Power - Peak Pulse: 30W
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DF10G5M4N,LF DF10G5M4N_datasheet_en_20220328.pdf?did=30751&prodName=DF10G5M4N
DF10G5M4N,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.6VWM 24VC 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: 10-DFN (2.5x1)
Bidirectional Channels: 4
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 30W
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
DF10G6M4N,LF DF10G6M4N_datasheet_en_20220818.pdf?did=30754&prodName=DF10G6M4N
DF10G6M4N,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 25VC 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 10-DFN (2.5x1)
Bidirectional Channels: 4
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 25V
Power - Peak Pulse: 30W
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TC7WH125FE,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS BUFFER DUAL NONINV 8SSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
SSM6J507NU,LF docget.jsp?did=30372&prodName=SSM6J507NU
SSM6J507NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 10A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 6-UDFNB (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 15 V
auf Bestellung 48000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.24 EUR
6000+0.22 EUR
9000+0.2 EUR
21000+0.19 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
SSM6J507NU,LF docget.jsp?did=30372&prodName=SSM6J507NU
SSM6J507NU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 10A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 6-UDFNB (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 15 V
auf Bestellung 49192 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.77 EUR
31+0.58 EUR
100+0.41 EUR
500+0.32 EUR
1000+0.28 EUR
Mindestbestellmenge: 23
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TPH2R608NH,L1Q docget.jsp?did=15733&prodName=TPH2R608NH
TPH2R608NH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 75V 150A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 37.5 V
auf Bestellung 13356 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.45 EUR
10+1.87 EUR
100+1.36 EUR
500+1.08 EUR
1000+1.02 EUR
Mindestbestellmenge: 8
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TPH2900ENH,L1Q docget.jsp?did=14485&prodName=TPH2900ENH
TPH2900ENH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 200V 33A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 16.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 100 V
auf Bestellung 11941 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.68 EUR
10+3.25 EUR
100+2.26 EUR
500+1.93 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
TK8P60W5,RVQ docget.jsp?did=14496&prodName=TK8P60W5
TK8P60W5,RVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 560mOhm @ 4A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 400µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V
auf Bestellung 2855 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.52 EUR
10+1.86 EUR
100+1.51 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
TK9P65W,RQ docget.jsp?type=datasheet&lang=en&pid=TK9P65W
TK9P65W,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 9.3A DPAK
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TK14G65W,RQ docget.jsp?did=14506&prodName=TK14G65W
TK14G65W,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 13.7A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 690µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
auf Bestellung 1919 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.45 EUR
10+3.2 EUR
100+2.42 EUR
500+2.15 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
TK14G65W5,RQ docget.jsp?did=14505&prodName=TK14G65W5
TK14G65W5,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 13.7A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 690µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TK20V60W5,LVQ TK20V60W5_datasheet_en_20160108.pdf?did=28825&prodName=TK20V60W5
TK20V60W5,LVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 20A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
auf Bestellung 4812 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.46 EUR
10+4.24 EUR
100+2.99 EUR
500+2.45 EUR
1000+2.28 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
TK6P65W,RQ
TK6P65W,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 5.8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2.9A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V
auf Bestellung 2008 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.16 EUR
10+1.76 EUR
100+1.37 EUR
500+1.16 EUR
1000+0.95 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
TK7P65W,RQ
TK7P65W,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 6.8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Ta)
Rds On (Max) @ Id, Vgs: 800mOhm @ 3.4A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 300 V
auf Bestellung 1408 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.46 EUR
10+2.05 EUR
100+1.63 EUR
500+1.38 EUR
1000+1.17 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
TK9P65W,RQ docget.jsp?type=datasheet&lang=en&pid=TK9P65W
TK9P65W,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 9.3A DPAK
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TPH2R608NH,L1Q docget.jsp?did=15733&prodName=TPH2R608NH
TPH2R608NH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 75V 150A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 37.5 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.84 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
TPH2900ENH,L1Q docget.jsp?did=14485&prodName=TPH2900ENH
TPH2900ENH,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 200V 33A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 16.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 100 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+1.58 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
TK8P60W5,RVQ docget.jsp?did=14496&prodName=TK8P60W5
TK8P60W5,RVQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 8A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 560mOhm @ 4A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 400µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+1.25 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
TK9P65W,RQ docget.jsp?type=datasheet&lang=en&pid=TK9P65W
TK9P65W,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 9.3A DPAK
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
TK14G65W,RQ docget.jsp?did=14506&prodName=TK14G65W
TK14G65W,RQ
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 13.7A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 690µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+2.04 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
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