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1SS427,L3M 1SS427,L3M Toshiba Semiconductor and Storage docget.jsp?did=11149&prodName=1SS427 Description: DIODE STANDARD 80V 100MA SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.6 ns
Technology: Standard
Capacitance @ Vr, F: 0.3pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
10000+0.05 EUR
20000+0.05 EUR
30000+0.04 EUR
50000+0.04 EUR
Mindestbestellmenge: 10000
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CBS10S30,L3F CBS10S30,L3F Toshiba Semiconductor and Storage docget.jsp?did=14076&prodName=CBS10S30 Description: DIODE SCHOTTKY 20V 1A CST2B
Produkt ist nicht verfügbar
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CBS10S40,L3F CBS10S40,L3F Toshiba Semiconductor and Storage CBS10S40_datasheet_en_20181116.pdf?did=14577&prodName=CBS10S40 Description: DIODE SCHOTTKY 40V 1A CST2B
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: CST2B
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
Produkt ist nicht verfügbar
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DF2B12M2SC,L3F DF2B12M2SC,L3F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF2B12M2SC Description: TVS DIODE 8VWM 18VC SC2
auf Bestellung 10 Stücke:
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SSM3K15ACT,L3F SSM3K15ACT,L3F Toshiba Semiconductor and Storage SSM3K15ACT_datasheet_en_20140301.pdf?did=5867&prodName=SSM3K15ACT Description: MOSFET N-CH 30V 100MA CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V
Produkt ist nicht verfügbar
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SSM6K403TU,LF SSM6K403TU,LF Toshiba Semiconductor and Storage docget.jsp?did=10947&prodName=SSM6K403TU Description: MOSFET N-CH 20V 4.2A UF6
Produkt ist nicht verfügbar
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T2N7002AK,LM T2N7002AK,LM Toshiba Semiconductor and Storage docget.jsp?did=29712&prodName=T2N7002AK Description: MOSFET N-CH 60V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
auf Bestellung 234000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.03 EUR
6000+0.03 EUR
9000+0.03 EUR
15000+0.03 EUR
21000+0.02 EUR
30000+0.02 EUR
Mindestbestellmenge: 3000
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TC4W53FU,LF TC4W53FU,LF Toshiba Semiconductor and Storage docget.jsp?did=20175&prodName=TC4W53FU Description: IC MUX/DEMUX DUAL 1X1 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 160Ohm
Supplier Device Package: 8-SSOP
Voltage - Supply, Single (V+): 3V ~ 18V
Part Status: Active
Number of Channels: 2
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.17 EUR
9000+0.16 EUR
Mindestbestellmenge: 3000
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TCR5AM10,LF TCR5AM10,LF Toshiba Semiconductor and Storage TCR5AM12_datasheet_en_20151215.pdf?did=29906&prodName=TCR5AM12 Description: IC REG LINEAR 1V 500MA 5DFNB
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 55 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 1V
Control Features: Enable
PSRR: 70dB ~ 40dB (1kHz ~ 10Hz)
Voltage Dropout (Max): 0.25V @ 500mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Current - Supply (Max): 68 µA
Produkt ist nicht verfügbar
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1SS427,L3M 1SS427,L3M Toshiba Semiconductor and Storage docget.jsp?did=11149&prodName=1SS427 Description: DIODE STANDARD 80V 100MA SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.6 ns
Technology: Standard
Capacitance @ Vr, F: 0.3pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 67116 Stücke:
Lieferzeit 10-14 Tag (e)
59+0.30 EUR
89+0.20 EUR
131+0.14 EUR
500+0.10 EUR
1000+0.09 EUR
2000+0.08 EUR
5000+0.07 EUR
Mindestbestellmenge: 59
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CBS10S30,L3F CBS10S30,L3F Toshiba Semiconductor and Storage docget.jsp?did=14076&prodName=CBS10S30 Description: DIODE SCHOTTKY 20V 1A CST2B
Produkt ist nicht verfügbar
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CBS10S40,L3F CBS10S40,L3F Toshiba Semiconductor and Storage CBS10S40_datasheet_en_20181116.pdf?did=14577&prodName=CBS10S40 Description: DIODE SCHOTTKY 40V 1A CST2B
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: CST2B
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
Produkt ist nicht verfügbar
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DF2B12M2SC,L3F DF2B12M2SC,L3F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF2B12M2SC Description: TVS DIODE 8VWM 18VC SC2
auf Bestellung 9850 Stücke:
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SSM3K15ACT,L3F SSM3K15ACT,L3F Toshiba Semiconductor and Storage SSM3K15ACT_datasheet_en_20140301.pdf?did=5867&prodName=SSM3K15ACT Description: MOSFET N-CH 30V 100MA CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V
auf Bestellung 8425 Stücke:
Lieferzeit 10-14 Tag (e)
40+0.44 EUR
67+0.26 EUR
108+0.16 EUR
500+0.12 EUR
1000+0.11 EUR
2000+0.10 EUR
5000+0.08 EUR
Mindestbestellmenge: 40
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SSM6K403TU,LF SSM6K403TU,LF Toshiba Semiconductor and Storage docget.jsp?did=10947&prodName=SSM6K403TU Description: MOSFET N-CH 20V 4.2A UF6
auf Bestellung 13 Stücke:
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SSM6K411TU(TE85L,F SSM6K411TU(TE85L,F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM6K411TU Description: MOSFET N-CH 20V 10A
auf Bestellung 5509 Stücke:
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T2N7002AK,LM T2N7002AK,LM Toshiba Semiconductor and Storage docget.jsp?did=29712&prodName=T2N7002AK Description: MOSFET N-CH 60V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
auf Bestellung 236884 Stücke:
Lieferzeit 10-14 Tag (e)
91+0.19 EUR
136+0.13 EUR
219+0.08 EUR
500+0.06 EUR
1000+0.05 EUR
Mindestbestellmenge: 91
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TC4W53FU,LF TC4W53FU,LF Toshiba Semiconductor and Storage docget.jsp?did=20175&prodName=TC4W53FU Description: IC MUX/DEMUX DUAL 1X1 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 160Ohm
Supplier Device Package: 8-SSOP
Voltage - Supply, Single (V+): 3V ~ 18V
Part Status: Active
Number of Channels: 2
auf Bestellung 30645 Stücke:
Lieferzeit 10-14 Tag (e)
42+0.42 EUR
62+0.29 EUR
70+0.25 EUR
100+0.22 EUR
250+0.20 EUR
500+0.19 EUR
1000+0.18 EUR
Mindestbestellmenge: 42
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TCR5AM10,LF TCR5AM10,LF Toshiba Semiconductor and Storage TCR5AM12_datasheet_en_20151215.pdf?did=29906&prodName=TCR5AM12 Description: IC REG LINEAR 1V 500MA 5DFNB
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 55 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 1V
Control Features: Enable
PSRR: 70dB ~ 40dB (1kHz ~ 10Hz)
Voltage Dropout (Max): 0.25V @ 500mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Current - Supply (Max): 68 µA
Produkt ist nicht verfügbar
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DF2B12M2SC,L3F DF2B12M2SC,L3F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF2B12M2SC Description: TVS DIODE 8VWM 18VC SC2
auf Bestellung 9850 Stücke:
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SSM6K411TU(TE85L,F SSM6K411TU(TE85L,F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM6K411TU Description: MOSFET N-CH 20V 10A
auf Bestellung 5509 Stücke:
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SSM6K411TU(TE85L,F SSM6K411TU(TE85L,F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=SSM6K411TU Description: MOSFET N-CH 20V 10A
auf Bestellung 3000 Stücke:
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TPH1R712MD,L1Q TPH1R712MD,L1Q Toshiba Semiconductor and Storage docget.jsp?did=14889&prodName=TPH1R712MD Description: MOSFET P-CH 20V 60A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 4.5V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 10 V
auf Bestellung 5000 Stücke:
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5000+0.87 EUR
Mindestbestellmenge: 5000
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TPN4R712MD,L1Q TPN4R712MD,L1Q Toshiba Semiconductor and Storage docget.jsp?did=28741&prodName=TPN4R712MD Description: MOSFET P-CH 20V 36A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 18A, 4.5V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 10 V
auf Bestellung 5000 Stücke:
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5000+0.47 EUR
Mindestbestellmenge: 5000
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TPH1R712MD,L1Q TPH1R712MD,L1Q Toshiba Semiconductor and Storage docget.jsp?did=14889&prodName=TPH1R712MD Description: MOSFET P-CH 20V 60A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 4.5V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 10 V
auf Bestellung 6253 Stücke:
Lieferzeit 10-14 Tag (e)
6+2.97 EUR
10+2.04 EUR
100+1.38 EUR
500+1.10 EUR
1000+0.98 EUR
2000+0.93 EUR
Mindestbestellmenge: 6
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TPN4R712MD,L1Q TPN4R712MD,L1Q Toshiba Semiconductor and Storage docget.jsp?did=28741&prodName=TPN4R712MD Description: MOSFET P-CH 20V 36A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 18A, 4.5V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 10 V
auf Bestellung 9110 Stücke:
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10+1.95 EUR
15+1.22 EUR
100+0.80 EUR
500+0.62 EUR
1000+0.57 EUR
2000+0.52 EUR
Mindestbestellmenge: 10
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TL1L4-DW0,L4A5B TL1L4-DW0,L4A5B Toshiba Semiconductor and Storage TL1L4-DW0,L4A5B.pdf Description: POWER LED WHT 6500K 3535
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TL1L4-NT0,L4A5B TL1L4-NT0,L4A5B Toshiba Semiconductor and Storage TL1L4-NT0,L4A5B.pdf Description: POWER LED WHT 5700K 3535
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TL1L4-NW0,L4A5B TL1L4-NW0,L4A5B Toshiba Semiconductor and Storage TL1L4-NW0,L4A5B.pdf Description: POWER LED WHT 5000K 3535
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TL1L4-WH0,L4A5B TL1L4-WH0,L4A5B Toshiba Semiconductor and Storage TL1L4-WH0,L4A5B.pdf Description: POWER LED WHT 4000K 3535
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TL2WU-DWJ,L Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TL2WU-DWJ,L Description: LED WHITE 65MW CSP 0603
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TL1L4-DW0,L4A5B TL1L4-DW0,L4A5B Toshiba Semiconductor and Storage TL1L4-DW0,L4A5B.pdf Description: POWER LED WHT 6500K 3535
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TL1L4-NT0,L4A5B TL1L4-NT0,L4A5B Toshiba Semiconductor and Storage TL1L4-NT0,L4A5B.pdf Description: POWER LED WHT 5700K 3535
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TL1L4-NW0,L4A5B TL1L4-NW0,L4A5B Toshiba Semiconductor and Storage TL1L4-NW0,L4A5B.pdf Description: POWER LED WHT 5000K 3535
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TL1L4-WH0,L4A5B TL1L4-WH0,L4A5B Toshiba Semiconductor and Storage TL1L4-WH0,L4A5B.pdf Description: POWER LED WHT 4000K 3535
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TL2WU-DWJ,L Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TL2WU-DWJ,L Description: LED WHITE 65MW CSP 0603
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TL1L4-DW0,L4A5B TL1L4-DW0,L4A5B Toshiba Semiconductor and Storage TL1L4-DW0,L4A5B.pdf Description: POWER LED WHT 6500K 3535
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TL1L4-NT0,L4A5B TL1L4-NT0,L4A5B Toshiba Semiconductor and Storage TL1L4-NT0,L4A5B.pdf Description: POWER LED WHT 5700K 3535
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TL1L4-NW0,L4A5B TL1L4-NW0,L4A5B Toshiba Semiconductor and Storage TL1L4-NW0,L4A5B.pdf Description: POWER LED WHT 5000K 3535
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TL1L4-WH0,L4A5B TL1L4-WH0,L4A5B Toshiba Semiconductor and Storage TL1L4-WH0,L4A5B.pdf Description: POWER LED WHT 4000K 3535
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TL2WU-DWJ,L Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TL2WU-DWJ,L Description: LED WHITE 65MW CSP 0603
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2SC4117-BL,LF 2SC4117-BL,LF Toshiba Semiconductor and Storage 2SC4117_datasheet_en_20210625.pdf?did=19294&prodName=2SC4117 Description: TRANS NPN 120V 0.1A SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 100 mW
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74VHC02FT 74VHC02FT Toshiba Semiconductor and Storage docget.jsp?did=15077&prodName=74VHC02FT Description: IC GATE NOR 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
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74VHCT04AFT 74VHCT04AFT Toshiba Semiconductor and Storage docget.jsp?did=15620&prodName=74VHCT04AFT Description: IC INVERTER 6CH 1-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 7.7ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
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DF3A5.6LFU,LF DF3A5.6LFU,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=DF3A5.6LFU Description: TVS DIODE 3.5VWM CST3
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DF5A5.6JE,LM DF5A5.6JE,LM Toshiba Semiconductor and Storage DF5A5.6JE_datasheet_en_20140301.pdf?did=22256&prodName=DF5A5.6JE Description: TVS DIODE 2.5VWM ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 65pF @ 1MHz
Voltage - Reverse Standoff (Typ): 2.5V
Supplier Device Package: ESV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.3V
Power Line Protection: No
Produkt ist nicht verfügbar
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RN1103MFV,L3F RN1103MFV,L3F Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=RN1102MFV Description: TRANS PREBIAS NPN 150MW VESM
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SSM3J327R,LF SSM3J327R,LF Toshiba Semiconductor and Storage SSM3J327R_datasheet_en_20211021.pdf?did=2051&prodName=SSM3J327R Description: MOSFET P-CH 20V 3.9A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
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3000+0.12 EUR
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SSM3J35CTC,L3F SSM3J35CTC,L3F Toshiba Semiconductor and Storage SSM3J35CTC_datasheet_en_20210201.pdf?did=35712&prodName=SSM3J35CTC Description: MOSFET P-CH 20V 250MA CST3C
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SSM3K15AFU,LF SSM3K15AFU,LF Toshiba Semiconductor and Storage SSM3K15AFU_datasheet_en_20140301.pdf?did=5878&prodName=SSM3K15AFU Description: MOSFET N-CH 30V 100MA USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: USM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V
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3000+0.07 EUR
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SSM3K2615R,LF SSM3K2615R,LF Toshiba Semiconductor and Storage docget.jsp?did=15672&prodName=SSM3K2615R Description: MOSFET N-CH 60V 2A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V
Qualification: AEC-Q101
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3000+0.26 EUR
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SSM3K318R,LF SSM3K318R,LF Toshiba Semiconductor and Storage SSM3K318R_datasheet_en_20160823.pdf?did=29655&prodName=SSM3K318R Description: MOSFET N-CH 60V 2.5A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 107mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 30 V
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3000+0.19 EUR
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SSM3K35CTC,L3F SSM3K35CTC,L3F Toshiba Semiconductor and Storage docget.jsp?did=29855&prodName=SSM3K35CTC Description: MOSFET N-CH 20V 250MA CST3C
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: CST3C
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 10 V
auf Bestellung 100000 Stücke:
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SSM3K7002CFU,LF SSM3K7002CFU,LF Toshiba Semiconductor and Storage docget.jsp?did=30494&prodName=SSM3K7002CFU Description: MOSFET N-CH 60V 170MA USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: USM
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
auf Bestellung 72000 Stücke:
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SSM6N7002CFU,LF SSM6N7002CFU,LF Toshiba Semiconductor and Storage docget.jsp?did=29875&prodName=SSM6N7002CFU Description: MOSFET 2N-CH 60V 0.17A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 285mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 170mA
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 10V
Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: US6
Part Status: Active
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TBAV99,LM TBAV99,LM Toshiba Semiconductor and Storage TBAV99.pdf Description: DIODE ARRAY GP 80V 100MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 18000 Stücke:
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TC7SPN334L6X,LF TC7SPN334L6X,LF Toshiba Semiconductor and Storage TC7SPN334L6X_datasheet_en_20220726.pdf?did=14438&prodName=TC7SPN334L6X Description: IC TRANSLTR UNIDIRECTIONAL 6MP6C
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Output Type: Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 6-MP6C (1.45x1.0)
Channel Type: Unidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 1.1 V ~ 2.7 V
Voltage - VCCB: 1.65 V ~ 3.6 V
Part Status: Active
Number of Circuits: 1
auf Bestellung 20000 Stücke:
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TC7W53FU,LF TC7W53FU,LF Toshiba Semiconductor and Storage Description: IC MUX/DEMUX 2:1 100OHM 8SSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 100Ohm
Supplier Device Package: 8-SSOP
Voltage - Supply, Single (V+): 2V ~ 6V
Voltage - Supply, Dual (V±): ±2V ~ 6V
Part Status: Active
Number of Channels: 2
auf Bestellung 9000 Stücke:
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TC7WH08FK,LJ(CT TC7WH08FK,LJ(CT Toshiba Semiconductor and Storage TC7WH08FK_datasheet_en_20170517.pdf?did=54660&prodName=TC7WH08FK Description: IC GATE AND 2CH 2-INP 8SSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 8-SSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
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TC7WPB8306L8X,LF TC7WPB8306L8X,LF Toshiba Semiconductor and Storage docget.jsp?type=datasheet&lang=en&pid=TC7WPB8306L8X Description: IC BUS SWITCH SPST DUAL CST8
auf Bestellung 6000 Stücke:
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1SS427,L3M docget.jsp?did=11149&prodName=1SS427
1SS427,L3M
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 80V 100MA SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.6 ns
Technology: Standard
Capacitance @ Vr, F: 0.3pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 60000 Stücke:
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Anzahl Preis
10000+0.05 EUR
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30000+0.04 EUR
50000+0.04 EUR
Mindestbestellmenge: 10000
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CBS10S30,L3F docget.jsp?did=14076&prodName=CBS10S30
CBS10S30,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 20V 1A CST2B
Produkt ist nicht verfügbar
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CBS10S40,L3F CBS10S40_datasheet_en_20181116.pdf?did=14577&prodName=CBS10S40
CBS10S40,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 1A CST2B
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: CST2B
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
Produkt ist nicht verfügbar
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DF2B12M2SC,L3F docget.jsp?type=datasheet&lang=en&pid=DF2B12M2SC
DF2B12M2SC,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 8VWM 18VC SC2
auf Bestellung 10 Stücke:
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SSM3K15ACT,L3F SSM3K15ACT_datasheet_en_20140301.pdf?did=5867&prodName=SSM3K15ACT
SSM3K15ACT,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100MA CST3
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V
Produkt ist nicht verfügbar
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SSM6K403TU,LF docget.jsp?did=10947&prodName=SSM6K403TU
SSM6K403TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 4.2A UF6
Produkt ist nicht verfügbar
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T2N7002AK,LM docget.jsp?did=29712&prodName=T2N7002AK
T2N7002AK,LM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 200MA SOT23
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
auf Bestellung 234000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.03 EUR
6000+0.03 EUR
9000+0.03 EUR
15000+0.03 EUR
21000+0.02 EUR
30000+0.02 EUR
Mindestbestellmenge: 3000
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TC4W53FU,LF docget.jsp?did=20175&prodName=TC4W53FU
TC4W53FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX DUAL 1X1 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 160Ohm
Supplier Device Package: 8-SSOP
Voltage - Supply, Single (V+): 3V ~ 18V
Part Status: Active
Number of Channels: 2
auf Bestellung 27000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.17 EUR
9000+0.16 EUR
Mindestbestellmenge: 3000
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TCR5AM10,LF TCR5AM12_datasheet_en_20151215.pdf?did=29906&prodName=TCR5AM12
TCR5AM10,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1V 500MA 5DFNB
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 55 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 1V
Control Features: Enable
PSRR: 70dB ~ 40dB (1kHz ~ 10Hz)
Voltage Dropout (Max): 0.25V @ 500mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Current - Supply (Max): 68 µA
Produkt ist nicht verfügbar
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1SS427,L3M docget.jsp?did=11149&prodName=1SS427
1SS427,L3M
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE STANDARD 80V 100MA SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 1.6 ns
Technology: Standard
Capacitance @ Vr, F: 0.3pF @ 0V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 67116 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.30 EUR
89+0.20 EUR
131+0.14 EUR
500+0.10 EUR
1000+0.09 EUR
2000+0.08 EUR
5000+0.07 EUR
Mindestbestellmenge: 59
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CBS10S30,L3F docget.jsp?did=14076&prodName=CBS10S30
CBS10S30,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 20V 1A CST2B
Produkt ist nicht verfügbar
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CBS10S40,L3F CBS10S40_datasheet_en_20181116.pdf?did=14577&prodName=CBS10S40
CBS10S40,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE SCHOTTKY 40V 1A CST2B
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 120pF @ 0V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: CST2B
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 150 µA @ 40 V
Produkt ist nicht verfügbar
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DF2B12M2SC,L3F docget.jsp?type=datasheet&lang=en&pid=DF2B12M2SC
DF2B12M2SC,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 8VWM 18VC SC2
auf Bestellung 9850 Stücke:
Lieferzeit 10-14 Tag (e)
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SSM3K15ACT,L3F SSM3K15ACT_datasheet_en_20140301.pdf?did=5867&prodName=SSM3K15ACT
SSM3K15ACT,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100MA CST3
Packaging: Cut Tape (CT)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V
Power Dissipation (Max): 100mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: CST3
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V
auf Bestellung 8425 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
40+0.44 EUR
67+0.26 EUR
108+0.16 EUR
500+0.12 EUR
1000+0.11 EUR
2000+0.10 EUR
5000+0.08 EUR
Mindestbestellmenge: 40
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SSM6K403TU,LF docget.jsp?did=10947&prodName=SSM6K403TU
SSM6K403TU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 4.2A UF6
auf Bestellung 13 Stücke:
Lieferzeit 10-14 Tag (e)
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SSM6K411TU(TE85L,F docget.jsp?type=datasheet&lang=en&pid=SSM6K411TU
SSM6K411TU(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 10A
auf Bestellung 5509 Stücke:
Lieferzeit 10-14 Tag (e)
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T2N7002AK,LM docget.jsp?did=29712&prodName=T2N7002AK
T2N7002AK,LM
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V
Power Dissipation (Max): 320mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
auf Bestellung 236884 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
91+0.19 EUR
136+0.13 EUR
219+0.08 EUR
500+0.06 EUR
1000+0.05 EUR
Mindestbestellmenge: 91
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TC4W53FU,LF docget.jsp?did=20175&prodName=TC4W53FU
TC4W53FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX DUAL 1X1 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 160Ohm
Supplier Device Package: 8-SSOP
Voltage - Supply, Single (V+): 3V ~ 18V
Part Status: Active
Number of Channels: 2
auf Bestellung 30645 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
42+0.42 EUR
62+0.29 EUR
70+0.25 EUR
100+0.22 EUR
250+0.20 EUR
500+0.19 EUR
1000+0.18 EUR
Mindestbestellmenge: 42
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TCR5AM10,LF TCR5AM12_datasheet_en_20151215.pdf?did=29906&prodName=TCR5AM12
TCR5AM10,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1V 500MA 5DFNB
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 55 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 1V
Control Features: Enable
PSRR: 70dB ~ 40dB (1kHz ~ 10Hz)
Voltage Dropout (Max): 0.25V @ 500mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Current - Supply (Max): 68 µA
Produkt ist nicht verfügbar
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DF2B12M2SC,L3F docget.jsp?type=datasheet&lang=en&pid=DF2B12M2SC
DF2B12M2SC,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 8VWM 18VC SC2
auf Bestellung 9850 Stücke:
Lieferzeit 10-14 Tag (e)
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SSM6K411TU(TE85L,F docget.jsp?type=datasheet&lang=en&pid=SSM6K411TU
SSM6K411TU(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 10A
auf Bestellung 5509 Stücke:
Lieferzeit 10-14 Tag (e)
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SSM6K411TU(TE85L,F docget.jsp?type=datasheet&lang=en&pid=SSM6K411TU
SSM6K411TU(TE85L,F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 10A
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
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TPH1R712MD,L1Q docget.jsp?did=14889&prodName=TPH1R712MD
TPH1R712MD,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 60A 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 4.5V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 10 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.87 EUR
Mindestbestellmenge: 5000
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TPN4R712MD,L1Q docget.jsp?did=28741&prodName=TPN4R712MD
TPN4R712MD,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 36A 8TSON
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 18A, 4.5V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 10 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.47 EUR
Mindestbestellmenge: 5000
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TPH1R712MD,L1Q docget.jsp?did=14889&prodName=TPH1R712MD
TPH1R712MD,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 60A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 1.7mOhm @ 30A, 4.5V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 182 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 10900 pF @ 10 V
auf Bestellung 6253 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.97 EUR
10+2.04 EUR
100+1.38 EUR
500+1.10 EUR
1000+0.98 EUR
2000+0.93 EUR
Mindestbestellmenge: 6
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TPN4R712MD,L1Q docget.jsp?did=28741&prodName=TPN4R712MD
TPN4R712MD,L1Q
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 36A 8TSON
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 36A (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 18A, 4.5V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 1.2V @ 1mA
Supplier Device Package: 8-TSON Advance (3.1x3.1)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 10 V
auf Bestellung 9110 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.95 EUR
15+1.22 EUR
100+0.80 EUR
500+0.62 EUR
1000+0.57 EUR
2000+0.52 EUR
Mindestbestellmenge: 10
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TL1L4-DW0,L4A5B TL1L4-DW0,L4A5B.pdf
TL1L4-DW0,L4A5B
Hersteller: Toshiba Semiconductor and Storage
Description: POWER LED WHT 6500K 3535
Produkt ist nicht verfügbar
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TL1L4-NT0,L4A5B TL1L4-NT0,L4A5B.pdf
TL1L4-NT0,L4A5B
Hersteller: Toshiba Semiconductor and Storage
Description: POWER LED WHT 5700K 3535
Produkt ist nicht verfügbar
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TL1L4-NW0,L4A5B TL1L4-NW0,L4A5B.pdf
TL1L4-NW0,L4A5B
Hersteller: Toshiba Semiconductor and Storage
Description: POWER LED WHT 5000K 3535
Produkt ist nicht verfügbar
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TL1L4-WH0,L4A5B TL1L4-WH0,L4A5B.pdf
TL1L4-WH0,L4A5B
Hersteller: Toshiba Semiconductor and Storage
Description: POWER LED WHT 4000K 3535
Produkt ist nicht verfügbar
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TL2WU-DWJ,L docget.jsp?type=datasheet&lang=en&pid=TL2WU-DWJ,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED WHITE 65MW CSP 0603
Produkt ist nicht verfügbar
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TL1L4-DW0,L4A5B TL1L4-DW0,L4A5B.pdf
TL1L4-DW0,L4A5B
Hersteller: Toshiba Semiconductor and Storage
Description: POWER LED WHT 6500K 3535
Produkt ist nicht verfügbar
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TL1L4-NT0,L4A5B TL1L4-NT0,L4A5B.pdf
TL1L4-NT0,L4A5B
Hersteller: Toshiba Semiconductor and Storage
Description: POWER LED WHT 5700K 3535
Produkt ist nicht verfügbar
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TL1L4-NW0,L4A5B TL1L4-NW0,L4A5B.pdf
TL1L4-NW0,L4A5B
Hersteller: Toshiba Semiconductor and Storage
Description: POWER LED WHT 5000K 3535
Produkt ist nicht verfügbar
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TL1L4-WH0,L4A5B TL1L4-WH0,L4A5B.pdf
TL1L4-WH0,L4A5B
Hersteller: Toshiba Semiconductor and Storage
Description: POWER LED WHT 4000K 3535
Produkt ist nicht verfügbar
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TL2WU-DWJ,L docget.jsp?type=datasheet&lang=en&pid=TL2WU-DWJ,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED WHITE 65MW CSP 0603
Produkt ist nicht verfügbar
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TL1L4-DW0,L4A5B TL1L4-DW0,L4A5B.pdf
TL1L4-DW0,L4A5B
Hersteller: Toshiba Semiconductor and Storage
Description: POWER LED WHT 6500K 3535
Produkt ist nicht verfügbar
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TL1L4-NT0,L4A5B TL1L4-NT0,L4A5B.pdf
TL1L4-NT0,L4A5B
Hersteller: Toshiba Semiconductor and Storage
Description: POWER LED WHT 5700K 3535
Produkt ist nicht verfügbar
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TL1L4-NW0,L4A5B TL1L4-NW0,L4A5B.pdf
TL1L4-NW0,L4A5B
Hersteller: Toshiba Semiconductor and Storage
Description: POWER LED WHT 5000K 3535
Produkt ist nicht verfügbar
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TL1L4-WH0,L4A5B TL1L4-WH0,L4A5B.pdf
TL1L4-WH0,L4A5B
Hersteller: Toshiba Semiconductor and Storage
Description: POWER LED WHT 4000K 3535
Produkt ist nicht verfügbar
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TL2WU-DWJ,L docget.jsp?type=datasheet&lang=en&pid=TL2WU-DWJ,L
Hersteller: Toshiba Semiconductor and Storage
Description: LED WHITE 65MW CSP 0603
Produkt ist nicht verfügbar
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2SC4117-BL,LF 2SC4117_datasheet_en_20210625.pdf?did=19294&prodName=2SC4117
2SC4117-BL,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS NPN 120V 0.1A SC-70
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 125°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 100 mW
auf Bestellung 84000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.07 EUR
6000+0.06 EUR
9000+0.06 EUR
15000+0.05 EUR
21000+0.05 EUR
30000+0.05 EUR
75000+0.04 EUR
Mindestbestellmenge: 3000
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74VHC02FT docget.jsp?did=15077&prodName=74VHC02FT
74VHC02FT
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE NOR 4CH 2-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.13 EUR
5000+0.12 EUR
Mindestbestellmenge: 2500
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74VHCT04AFT docget.jsp?did=15620&prodName=74VHCT04AFT
74VHCT04AFT
Hersteller: Toshiba Semiconductor and Storage
Description: IC INVERTER 6CH 1-INP 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 7.7ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
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DF3A5.6LFU,LF docget.jsp?type=datasheet&lang=en&pid=DF3A5.6LFU
DF3A5.6LFU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.5VWM CST3
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DF5A5.6JE,LM DF5A5.6JE_datasheet_en_20140301.pdf?did=22256&prodName=DF5A5.6JE
DF5A5.6JE,LM
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 2.5VWM ESV
Packaging: Tape & Reel (TR)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 65pF @ 1MHz
Voltage - Reverse Standoff (Typ): 2.5V
Supplier Device Package: ESV
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.3V
Power Line Protection: No
Produkt ist nicht verfügbar
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RN1103MFV,L3F docget.jsp?type=datasheet&lang=en&pid=RN1102MFV
RN1103MFV,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 150MW VESM
auf Bestellung 8000 Stücke:
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SSM3J327R,LF SSM3J327R_datasheet_en_20211021.pdf?did=2051&prodName=SSM3J327R
SSM3J327R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 3.9A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
Rds On (Max) @ Id, Vgs: 93mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 1mA
Supplier Device Package: SOT-23F
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 10 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.12 EUR
6000+0.10 EUR
9000+0.10 EUR
Mindestbestellmenge: 3000
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SSM3J35CTC,L3F SSM3J35CTC_datasheet_en_20210201.pdf?did=35712&prodName=SSM3J35CTC
SSM3J35CTC,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 20V 250MA CST3C
Produkt ist nicht verfügbar
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SSM3K15AFU,LF SSM3K15AFU_datasheet_en_20140301.pdf?did=5878&prodName=SSM3K15AFU
SSM3K15AFU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 30V 100MA USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 10mA, 4V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 100µA
Supplier Device Package: USM
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Input Capacitance (Ciss) (Max) @ Vds: 13.5 pF @ 3 V
auf Bestellung 24000 Stücke:
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Anzahl Preis
3000+0.07 EUR
6000+0.06 EUR
9000+0.06 EUR
15000+0.05 EUR
21000+0.05 EUR
Mindestbestellmenge: 3000
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SSM3K2615R,LF docget.jsp?did=15672&prodName=SSM3K2615R
SSM3K2615R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 2A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: SOT-23F
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 3.3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 10 V
Qualification: AEC-Q101
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.26 EUR
6000+0.24 EUR
9000+0.21 EUR
15000+0.20 EUR
Mindestbestellmenge: 3000
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SSM3K318R,LF SSM3K318R_datasheet_en_20160823.pdf?did=29655&prodName=SSM3K318R
SSM3K318R,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 2.5A SOT23F
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-3 Flat Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Ta)
Rds On (Max) @ Id, Vgs: 107mOhm @ 2A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 2.8V @ 1mA
Supplier Device Package: SOT-23F
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 30 V
auf Bestellung 6000 Stücke:
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Anzahl Preis
3000+0.19 EUR
6000+0.17 EUR
Mindestbestellmenge: 3000
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SSM3K35CTC,L3F docget.jsp?did=29855&prodName=SSM3K35CTC
SSM3K35CTC,L3F
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 20V 250MA CST3C
Packaging: Tape & Reel (TR)
Package / Case: SC-101, SOT-883
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Ta)
Rds On (Max) @ Id, Vgs: 1.1Ohm @ 150mA, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 100µA
Supplier Device Package: CST3C
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 0.34 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 36 pF @ 10 V
auf Bestellung 100000 Stücke:
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Anzahl Preis
10000+0.05 EUR
20000+0.05 EUR
30000+0.05 EUR
50000+0.04 EUR
Mindestbestellmenge: 10000
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SSM3K7002CFU,LF docget.jsp?did=30494&prodName=SSM3K7002CFU
SSM3K7002CFU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 60V 170MA USM
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 170mA (Ta)
Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V
Power Dissipation (Max): 150mW (Ta)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: USM
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 17 pF @ 10 V
auf Bestellung 72000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.04 EUR
6000+0.03 EUR
9000+0.03 EUR
15000+0.03 EUR
Mindestbestellmenge: 3000
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SSM6N7002CFU,LF docget.jsp?did=29875&prodName=SSM6N7002CFU
SSM6N7002CFU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET 2N-CH 60V 0.17A US6
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 285mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 170mA
Input Capacitance (Ciss) (Max) @ Vds: 17pF @ 10V
Rds On (Max) @ Id, Vgs: 3.9Ohm @ 100mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.35nC @ 4.5V
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: US6
Part Status: Active
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.05 EUR
6000+0.05 EUR
9000+0.04 EUR
15000+0.04 EUR
Mindestbestellmenge: 3000
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TBAV99,LM TBAV99.pdf
TBAV99,LM
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARRAY GP 80V 100MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 100mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 500 nA @ 80 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.06 EUR
6000+0.05 EUR
9000+0.05 EUR
15000+0.04 EUR
Mindestbestellmenge: 3000
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TC7SPN334L6X,LF TC7SPN334L6X_datasheet_en_20220726.pdf?did=14438&prodName=TC7SPN334L6X
TC7SPN334L6X,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC TRANSLTR UNIDIRECTIONAL 6MP6C
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Output Type: Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 6-MP6C (1.45x1.0)
Channel Type: Unidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 1.1 V ~ 2.7 V
Voltage - VCCB: 1.65 V ~ 3.6 V
Part Status: Active
Number of Circuits: 1
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.20 EUR
10000+0.18 EUR
15000+0.17 EUR
Mindestbestellmenge: 5000
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TC7W53FU,LF
TC7W53FU,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC MUX/DEMUX 2:1 100OHM 8SSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.110", 2.80mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 100Ohm
Supplier Device Package: 8-SSOP
Voltage - Supply, Single (V+): 2V ~ 6V
Voltage - Supply, Dual (V±): ±2V ~ 6V
Part Status: Active
Number of Channels: 2
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.20 EUR
6000+0.18 EUR
9000+0.17 EUR
Mindestbestellmenge: 3000
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TC7WH08FK,LJ(CT TC7WH08FK_datasheet_en_20170517.pdf?did=54660&prodName=TC7WH08FK
TC7WH08FK,LJ(CT
Hersteller: Toshiba Semiconductor and Storage
Description: IC GATE AND 2CH 2-INP 8SSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 8-SSOP
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.9ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 2
Current - Quiescent (Max): 2 µA
auf Bestellung 27000 Stücke:
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Anzahl Preis
3000+0.12 EUR
6000+0.11 EUR
Mindestbestellmenge: 3000
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TC7WPB8306L8X,LF docget.jsp?type=datasheet&lang=en&pid=TC7WPB8306L8X
TC7WPB8306L8X,LF
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS SWITCH SPST DUAL CST8
auf Bestellung 6000 Stücke:
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