Produkte > TOSHIBA SEMICONDUCTOR AND STORAGE > Alle Produkte des Herstellers TOSHIBA SEMICONDUCTOR AND STORAGE (13020) > Seite 104 nach 217
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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TCR2LF10,LM(CT | Toshiba Semiconductor and Storage | Description: IC REG LDO 1V 0.2A SMV |
auf Bestellung 5740 Stücke: Lieferzeit 21-28 Tag (e) |
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TCR2LF12,LM(CT | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 1.2V 200MA SMV Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 2 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SMV Voltage - Output (Min/Fixed): 1.2V Control Features: Enable Part Status: Active Voltage Dropout (Max): 1.25V @ 150mA Protection Features: Over Current |
auf Bestellung 1623 Stücke: Lieferzeit 21-28 Tag (e) |
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TCR2LF25,LM(CT | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 2.5V 200MA SMV Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 2 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SMV Voltage - Output (Min/Fixed): 2.5V Control Features: Enable Voltage Dropout (Max): 0.38V @ 150mA Protection Features: Over Current |
auf Bestellung 3003 Stücke: Lieferzeit 21-28 Tag (e) |
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TCR2LF27,LM(CT | Toshiba Semiconductor and Storage | Description: IC REG LINEAR 2.7V 200MA SMV |
Produkt ist nicht verfügbar |
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TCR2LF32,LM(CT | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3.2V 200MA SMV Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 2 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SMV Voltage - Output (Min/Fixed): 3.2V Control Features: Enable Part Status: Active Voltage Dropout (Max): 0.3V @ 150mA Protection Features: Over Current |
auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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TCR2LF33,LM(CT | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 3.3V 200MA SMV Packaging: Cut Tape (CT) Package / Case: SC-74A, SOT-753 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 200mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 2 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: SMV Voltage - Output (Min/Fixed): 3.3V Control Features: Enable Part Status: Active Voltage Dropout (Max): 0.3V @ 150mA Protection Features: Over Current |
auf Bestellung 220963 Stücke: Lieferzeit 21-28 Tag (e) |
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TCR2LF36,LM(CT | Toshiba Semiconductor and Storage | Description: IC REG LINEAR 3.6V 200MA SMV |
auf Bestellung 2990 Stücke: Lieferzeit 21-28 Tag (e) |
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TCR5AM055,LF | Toshiba Semiconductor and Storage | Description: IC REG LDO 0.55V 0.5A 5DFN |
Produkt ist nicht verfügbar |
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TCR5AM06,LF | Toshiba Semiconductor and Storage | Description: IC REG LINEAR 0.6V 500MA 5DFNB |
Produkt ist nicht verfügbar |
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TCR5AM065,LF | Toshiba Semiconductor and Storage | Description: IC REG LINEAR 0.65V 500MA 5DFNB |
Produkt ist nicht verfügbar |
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TCR5AM07,LF | Toshiba Semiconductor and Storage | Description: IC REG LDO 0.7V 0.5A 5DFN |
Produkt ist nicht verfügbar |
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TCR5AM075,LF | Toshiba Semiconductor and Storage | Description: IC REG LDO 0.75V 0.5A 5DFN |
Produkt ist nicht verfügbar |
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TCR5AM08,LF | Toshiba Semiconductor and Storage | Description: IC REG LDO 0.8V 0.5A 5DFN |
Produkt ist nicht verfügbar |
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TCR5AM085,LF | Toshiba Semiconductor and Storage | Description: IC REG LDO 0.85V 0.5A 5DFN |
Produkt ist nicht verfügbar |
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TCR5AM09,LF | Toshiba Semiconductor and Storage |
Description: IC REG LINEAR 0.9V 500MA 5DFNB Packaging: Cut Tape (CT) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 55 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 5-DFNB (1.2x1.2) Voltage - Output (Min/Fixed): 0.9V Control Features: Enable PSRR: 70dB ~ 40dB (1kHz ~ 10Hz) Voltage Dropout (Max): 0.23V @ 500mA Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO) Current - Supply (Max): 68 µA |
auf Bestellung 4099 Stücke: Lieferzeit 21-28 Tag (e) |
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TCR5AM095,LF | Toshiba Semiconductor and Storage | Description: IC REG LDO 0.95V 0.5A 5DFN |
Produkt ist nicht verfügbar |
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TCR5AM105,LF | Toshiba Semiconductor and Storage | Description: IC REG LDO 1.05V 0.5A 5DFN |
Produkt ist nicht verfügbar |
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TC75W55FU,LF | Toshiba Semiconductor and Storage | Description: IC OPAMP GP 160KHZ SM8-8 |
auf Bestellung 2989 Stücke: Lieferzeit 21-28 Tag (e) |
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TCK302G,LF | Toshiba Semiconductor and Storage | Description: IC POWER DIST LOAD SWITCH 9WCSP |
auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |
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TCR2LE10,LM(CT | Toshiba Semiconductor and Storage | Description: IC REG LDO 1V 0.2A ESV |
auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) |
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TCR2LE27,LM(CT | Toshiba Semiconductor and Storage | Description: IC REG LDO 2.7V 0.2A ESV |
auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) |
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TCR2LE36,LM(CT | Toshiba Semiconductor and Storage | Description: IC REG LDO 3.6V 0.2A ESV |
auf Bestellung 7990 Stücke: Lieferzeit 21-28 Tag (e) |
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TCR2LF10,LM(CT | Toshiba Semiconductor and Storage | Description: IC REG LDO 1V 0.2A SMV |
auf Bestellung 5740 Stücke: Lieferzeit 21-28 Tag (e) |
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TCR2LF27,LM(CT | Toshiba Semiconductor and Storage | Description: IC REG LINEAR 2.7V 200MA SMV |
Produkt ist nicht verfügbar |
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RN1110,LF(CT | Toshiba Semiconductor and Storage | Description: TRANS PREBIAS NPN 0.1W SSM |
Produkt ist nicht verfügbar |
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DF2B5M4SL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 3.6VWM 24VC SL2 Packaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 0.2pF @ 1MHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 3.6V (Max) Supplier Device Package: SL2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 4V Voltage - Clamping (Max) @ Ipp: 24V Power - Peak Pulse: 30W Power Line Protection: No |
auf Bestellung 80000 Stücke: Lieferzeit 21-28 Tag (e) |
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DF2B6M4SL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5.5VWM 25VC SL2 Packaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 0.2pF @ 1MHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: SL2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.6V Voltage - Clamping (Max) @ Ipp: 25V Power - Peak Pulse: 30W Power Line Protection: No |
Produkt ist nicht verfügbar |
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DF2B7M3SL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5.5VWM 20VC SL2 Packaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 0.1pF @ 1MHz Current - Peak Pulse (10/1000µs): 2.5A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: SL2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 20V Power - Peak Pulse: 50W Power Line Protection: No |
auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) |
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DF2S5.1ASL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 1.5VWM SL2 Packaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 45pF @ 1MHz Voltage - Reverse Standoff (Typ): 1.5V (Max) Supplier Device Package: SL2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 4.8V Power Line Protection: No |
Produkt ist nicht verfügbar |
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DF2S5.6ASL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 3.5VWM SL2 Packaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 40pF @ 1MHz Voltage - Reverse Standoff (Typ): 3.5V (Max) Supplier Device Package: SL2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.3V Power Line Protection: No |
auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) |
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DF2S6.2ASL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM SL2-2 Packaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 32pF @ 1MHz Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SL2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.8V Power Line Protection: No Part Status: Active |
auf Bestellung 60000 Stücke: Lieferzeit 21-28 Tag (e) |
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DF2S6.8ASL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM SL2-2 Packaging: Tape & Reel (TR) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 25pF @ 1MHz Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SL2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.4V Power Line Protection: No Part Status: Active |
auf Bestellung 19900 Stücke: Lieferzeit 21-28 Tag (e) |
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DF2S8.2ASL,L3F | Toshiba Semiconductor and Storage | Description: TVS DIODE 6.55VWM SL2-2 |
auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) |
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DF2B5M4SL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 3.6VWM 24VC SL2 Packaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 0.2pF @ 1MHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 3.6V (Max) Supplier Device Package: SL2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 4V Voltage - Clamping (Max) @ Ipp: 24V Power - Peak Pulse: 30W Power Line Protection: No |
auf Bestellung 80055 Stücke: Lieferzeit 21-28 Tag (e) |
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DF2B6M4SL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5.5VWM 25VC SL2 Packaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 0.2pF @ 1MHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: SL2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 5.6V Voltage - Clamping (Max) @ Ipp: 25V Power - Peak Pulse: 30W Power Line Protection: No |
auf Bestellung 12882 Stücke: Lieferzeit 21-28 Tag (e) |
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DF2B7M3SL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5.5VWM 20VC SL2 Packaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 0.1pF @ 1MHz Current - Peak Pulse (10/1000µs): 2.5A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: SL2 Bidirectional Channels: 1 Voltage - Breakdown (Min): 6V Voltage - Clamping (Max) @ Ipp: 20V Power - Peak Pulse: 50W Power Line Protection: No |
auf Bestellung 40659 Stücke: Lieferzeit 21-28 Tag (e) |
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DF2S5.1ASL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 1.5VWM SL2 Packaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 45pF @ 1MHz Voltage - Reverse Standoff (Typ): 1.5V (Max) Supplier Device Package: SL2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 4.8V Power Line Protection: No |
auf Bestellung 2475 Stücke: Lieferzeit 21-28 Tag (e) |
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DF2S5.6ASL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 3.5VWM SL2 Packaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 40pF @ 1MHz Voltage - Reverse Standoff (Typ): 3.5V (Max) Supplier Device Package: SL2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.3V Power Line Protection: No |
auf Bestellung 38256 Stücke: Lieferzeit 21-28 Tag (e) |
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DF2S6.2ASL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM SL2-2 Packaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 32pF @ 1MHz Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SL2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 5.8V Power Line Protection: No Part Status: Active |
auf Bestellung 79615 Stücke: Lieferzeit 21-28 Tag (e) |
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DF2S6.8ASL,L3F | Toshiba Semiconductor and Storage |
Description: TVS DIODE 5VWM SL2-2 Packaging: Cut Tape (CT) Package / Case: 2-SMD, No Lead Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 25pF @ 1MHz Voltage - Reverse Standoff (Typ): 5V (Max) Supplier Device Package: SL2 Unidirectional Channels: 1 Voltage - Breakdown (Min): 6.4V Power Line Protection: No Part Status: Active |
auf Bestellung 27644 Stücke: Lieferzeit 21-28 Tag (e) |
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DF2S8.2ASL,L3F | Toshiba Semiconductor and Storage | Description: TVS DIODE 6.55VWM SL2-2 |
auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) |
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DF2S8.2ASL,L3F | Toshiba Semiconductor and Storage | Description: TVS DIODE 6.55VWM SL2-2 |
auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) |
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TMPM333FWFG(C,J) | Toshiba Semiconductor and Storage | Description: IC MCU 32BIT 128KB FLASH 100LQFP |
Produkt ist nicht verfügbar |
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TMPM333FYFG(C) | Toshiba Semiconductor and Storage |
Description: IC MCU 32BIT 256KB FLASH 100LQFP Packaging: Tray Package / Case: 100-LQFP Mounting Type: Surface Mount Speed: 40MHz Program Memory Size: 256KB (256K x 8) RAM Size: 16K x 8 Operating Temperature: -20°C ~ 85°C (TA) Oscillator Type: External Program Memory Type: FLASH Core Processor: ARM® Cortex®-M3 Data Converters: A/D 12x10b Core Size: 32-Bit Single-Core Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V Connectivity: I²C, SIO, UART/USART Peripherals: POR, WDT Supplier Device Package: 100-LQFP (14x14) Part Status: Active Number of I/O: 78 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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TMPM380FYFG(C) | Toshiba Semiconductor and Storage | Description: IC MCU 32BIT 256KB FLASH 100LQFP |
auf Bestellung 360 Stücke: Lieferzeit 21-28 Tag (e) |
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DF10G5M4N,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 3.6VWM 24VC 10DFN Packaging: Tape & Reel (TR) Package / Case: 10-UFDFN Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 0.2pF @ 1MHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 3.6V (Max) Supplier Device Package: 10-DFN (2.5x1) Bidirectional Channels: 4 Voltage - Breakdown (Min): 4V Voltage - Clamping (Max) @ Ipp: 24V Power - Peak Pulse: 30W Power Line Protection: No |
Produkt ist nicht verfügbar |
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DF10G6M4N,LF | Toshiba Semiconductor and Storage | Description: TVS DIODE 5.5V 25V 10DFN |
Produkt ist nicht verfügbar |
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DF10G5M4N,LF | Toshiba Semiconductor and Storage |
Description: TVS DIODE 3.6VWM 24VC 10DFN Packaging: Cut Tape (CT) Package / Case: 10-UFDFN Mounting Type: Surface Mount Type: Zener Applications: General Purpose Capacitance @ Frequency: 0.2pF @ 1MHz Current - Peak Pulse (10/1000µs): 2A (8/20µs) Voltage - Reverse Standoff (Typ): 3.6V (Max) Supplier Device Package: 10-DFN (2.5x1) Bidirectional Channels: 4 Voltage - Breakdown (Min): 4V Voltage - Clamping (Max) @ Ipp: 24V Power - Peak Pulse: 30W Power Line Protection: No |
Produkt ist nicht verfügbar |
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DF10G6M4N,LF | Toshiba Semiconductor and Storage | Description: TVS DIODE 5.5V 25V 10DFN |
auf Bestellung 1254 Stücke: Lieferzeit 21-28 Tag (e) |
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TC7WH125FE,LJ(CT | Toshiba Semiconductor and Storage | Description: IC BUS BUFFER DUAL NONINV 8SSOP |
Produkt ist nicht verfügbar |
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SSM6J507NU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 10A 6UDFNB Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 4A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 6-UDFNB (2x2) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): +20V, -25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 15 V |
Produkt ist nicht verfügbar |
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SSM6J507NU,LF | Toshiba Semiconductor and Storage |
Description: MOSFET P-CH 30V 10A 6UDFNB Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta) Rds On (Max) @ Id, Vgs: 20mOhm @ 4A, 10V Power Dissipation (Max): 1.25W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 6-UDFNB (2x2) Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): +20V, -25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 15 V |
auf Bestellung 2758 Stücke: Lieferzeit 21-28 Tag (e) |
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TPH2R608NH,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 75V 150A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V Power Dissipation (Max): 142W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 37.5 V |
auf Bestellung 117473 Stücke: Lieferzeit 21-28 Tag (e) |
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TPH2900ENH,L1Q | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 200V 33A 8SOP Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Ta) Rds On (Max) @ Id, Vgs: 29mOhm @ 16.5A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: 8-SOP Advance (5x5) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 100 V |
auf Bestellung 15173 Stücke: Lieferzeit 21-28 Tag (e) |
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TK8P60W5,RVQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 8A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8A (Ta) Rds On (Max) @ Id, Vgs: 560mOhm @ 4A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 400µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V |
auf Bestellung 15673 Stücke: Lieferzeit 21-28 Tag (e) |
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TK9P65W,RQ | Toshiba Semiconductor and Storage | Description: MOSFET N-CH 650V 9.3A DPAK |
auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) |
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TK14G65W,RQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 650V 13.7A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta) Rds On (Max) @ Id, Vgs: 250mOhm @ 6.9A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 690µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V |
auf Bestellung 3525 Stücke: Lieferzeit 21-28 Tag (e) |
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TK14G65W5,RQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 650V 13.7A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta) Rds On (Max) @ Id, Vgs: 300mOhm @ 6.9A, 10V Power Dissipation (Max): 130W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 690µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V |
Produkt ist nicht verfügbar |
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TK20V60W5,LVQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 600V 20A 4DFN Packaging: Cut Tape (CT) Package / Case: 4-VSFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta) Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1mA Supplier Device Package: 4-DFN-EP (8x8) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V |
auf Bestellung 4812 Stücke: Lieferzeit 21-28 Tag (e) |
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TK6P65W,RQ | Toshiba Semiconductor and Storage |
Description: MOSFET N-CH 650V 5.8A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta) Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2.9A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 180µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V |
auf Bestellung 1246 Stücke: Lieferzeit 21-28 Tag (e) |
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TCR2LF10,LM(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LDO 1V 0.2A SMV
Description: IC REG LDO 1V 0.2A SMV
auf Bestellung 5740 Stücke:
Lieferzeit 21-28 Tag (e)TCR2LF12,LM(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 1.2V 200MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 1.25V @ 150mA
Protection Features: Over Current
Description: IC REG LINEAR 1.2V 200MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 1.2V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 1.25V @ 150mA
Protection Features: Over Current
auf Bestellung 1623 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
26+ | 1.01 EUR |
35+ | 0.75 EUR |
40+ | 0.66 EUR |
100+ | 0.42 EUR |
250+ | 0.35 EUR |
500+ | 0.28 EUR |
1000+ | 0.22 EUR |
TCR2LF25,LM(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.5V 200MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Voltage Dropout (Max): 0.38V @ 150mA
Protection Features: Over Current
Description: IC REG LINEAR 2.5V 200MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Voltage Dropout (Max): 0.38V @ 150mA
Protection Features: Over Current
auf Bestellung 3003 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 0.94 EUR |
38+ | 0.7 EUR |
43+ | 0.61 EUR |
100+ | 0.39 EUR |
250+ | 0.33 EUR |
500+ | 0.26 EUR |
1000+ | 0.2 EUR |
TCR2LF27,LM(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.7V 200MA SMV
Description: IC REG LINEAR 2.7V 200MA SMV
Produkt ist nicht verfügbar
TCR2LF32,LM(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.2V 200MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3.2V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.3V @ 150mA
Protection Features: Over Current
Description: IC REG LINEAR 3.2V 200MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3.2V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.3V @ 150mA
Protection Features: Over Current
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
27+ | 0.99 EUR |
TCR2LF33,LM(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.3V 200MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.3V @ 150mA
Protection Features: Over Current
Description: IC REG LINEAR 3.3V 200MA SMV
Packaging: Cut Tape (CT)
Package / Case: SC-74A, SOT-753
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 200mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 2 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: SMV
Voltage - Output (Min/Fixed): 3.3V
Control Features: Enable
Part Status: Active
Voltage Dropout (Max): 0.3V @ 150mA
Protection Features: Over Current
auf Bestellung 220963 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
29+ | 0.91 EUR |
39+ | 0.68 EUR |
44+ | 0.59 EUR |
100+ | 0.38 EUR |
250+ | 0.32 EUR |
500+ | 0.25 EUR |
1000+ | 0.2 EUR |
TCR2LF36,LM(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 3.6V 200MA SMV
Description: IC REG LINEAR 3.6V 200MA SMV
auf Bestellung 2990 Stücke:
Lieferzeit 21-28 Tag (e)TCR5AM055,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LDO 0.55V 0.5A 5DFN
Description: IC REG LDO 0.55V 0.5A 5DFN
Produkt ist nicht verfügbar
TCR5AM06,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 0.6V 500MA 5DFNB
Description: IC REG LINEAR 0.6V 500MA 5DFNB
Produkt ist nicht verfügbar
TCR5AM065,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 0.65V 500MA 5DFNB
Description: IC REG LINEAR 0.65V 500MA 5DFNB
Produkt ist nicht verfügbar
TCR5AM07,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LDO 0.7V 0.5A 5DFN
Description: IC REG LDO 0.7V 0.5A 5DFN
Produkt ist nicht verfügbar
TCR5AM075,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LDO 0.75V 0.5A 5DFN
Description: IC REG LDO 0.75V 0.5A 5DFN
Produkt ist nicht verfügbar
TCR5AM08,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LDO 0.8V 0.5A 5DFN
Description: IC REG LDO 0.8V 0.5A 5DFN
Produkt ist nicht verfügbar
TCR5AM085,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LDO 0.85V 0.5A 5DFN
Description: IC REG LDO 0.85V 0.5A 5DFN
Produkt ist nicht verfügbar
TCR5AM09,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 0.9V 500MA 5DFNB
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 55 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 0.9V
Control Features: Enable
PSRR: 70dB ~ 40dB (1kHz ~ 10Hz)
Voltage Dropout (Max): 0.23V @ 500mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Current - Supply (Max): 68 µA
Description: IC REG LINEAR 0.9V 500MA 5DFNB
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 55 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 5-DFNB (1.2x1.2)
Voltage - Output (Min/Fixed): 0.9V
Control Features: Enable
PSRR: 70dB ~ 40dB (1kHz ~ 10Hz)
Voltage Dropout (Max): 0.23V @ 500mA
Protection Features: Over Current, Over Temperature, Under Voltage Lockout (UVLO)
Current - Supply (Max): 68 µA
auf Bestellung 4099 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 1.04 EUR |
30+ | 0.89 EUR |
32+ | 0.83 EUR |
100+ | 0.66 EUR |
250+ | 0.61 EUR |
500+ | 0.52 EUR |
1000+ | 0.4 EUR |
2500+ | 0.37 EUR |
TCR5AM095,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LDO 0.95V 0.5A 5DFN
Description: IC REG LDO 0.95V 0.5A 5DFN
Produkt ist nicht verfügbar
TCR5AM105,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LDO 1.05V 0.5A 5DFN
Description: IC REG LDO 1.05V 0.5A 5DFN
Produkt ist nicht verfügbar
TC75W55FU,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC OPAMP GP 160KHZ SM8-8
Description: IC OPAMP GP 160KHZ SM8-8
auf Bestellung 2989 Stücke:
Lieferzeit 21-28 Tag (e)TCK302G,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: IC POWER DIST LOAD SWITCH 9WCSP
Description: IC POWER DIST LOAD SWITCH 9WCSP
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)TCR2LE10,LM(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LDO 1V 0.2A ESV
Description: IC REG LDO 1V 0.2A ESV
auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)TCR2LE27,LM(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LDO 2.7V 0.2A ESV
Description: IC REG LDO 2.7V 0.2A ESV
auf Bestellung 8000 Stücke:
Lieferzeit 21-28 Tag (e)TCR2LE36,LM(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LDO 3.6V 0.2A ESV
Description: IC REG LDO 3.6V 0.2A ESV
auf Bestellung 7990 Stücke:
Lieferzeit 21-28 Tag (e)TCR2LF10,LM(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LDO 1V 0.2A SMV
Description: IC REG LDO 1V 0.2A SMV
auf Bestellung 5740 Stücke:
Lieferzeit 21-28 Tag (e)TCR2LF27,LM(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: IC REG LINEAR 2.7V 200MA SMV
Description: IC REG LINEAR 2.7V 200MA SMV
Produkt ist nicht verfügbar
RN1110,LF(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: TRANS PREBIAS NPN 0.1W SSM
Description: TRANS PREBIAS NPN 0.1W SSM
Produkt ist nicht verfügbar
DF2B5M4SL,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.6VWM 24VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 30W
Power Line Protection: No
Description: TVS DIODE 3.6VWM 24VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 30W
Power Line Protection: No
auf Bestellung 80000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10000+ | 0.12 EUR |
30000+ | 0.11 EUR |
50000+ | 0.095 EUR |
DF2B6M4SL,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 25VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 25V
Power - Peak Pulse: 30W
Power Line Protection: No
Description: TVS DIODE 5.5VWM 25VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 25V
Power - Peak Pulse: 30W
Power Line Protection: No
Produkt ist nicht verfügbar
DF2B7M3SL,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 20VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 50W
Power Line Protection: No
Description: TVS DIODE 5.5VWM 20VC SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 50W
Power Line Protection: No
auf Bestellung 30000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10000+ | 0.12 EUR |
30000+ | 0.11 EUR |
DF2S5.1ASL,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 1.5VWM SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Voltage - Reverse Standoff (Typ): 1.5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4.8V
Power Line Protection: No
Description: TVS DIODE 1.5VWM SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Voltage - Reverse Standoff (Typ): 1.5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4.8V
Power Line Protection: No
Produkt ist nicht verfügbar
DF2S5.6ASL,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.5VWM SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 40pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Power Line Protection: No
Description: TVS DIODE 3.5VWM SL2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 40pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Power Line Protection: No
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10000+ | 0.061 EUR |
DF2S6.2ASL,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM SL2-2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 32pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5VWM SL2-2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 32pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Part Status: Active
auf Bestellung 60000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10000+ | 0.063 EUR |
30000+ | 0.058 EUR |
50000+ | 0.05 EUR |
DF2S6.8ASL,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM SL2-2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5VWM SL2-2
Packaging: Tape & Reel (TR)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
Part Status: Active
auf Bestellung 19900 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10000+ | 0.062 EUR |
DF2S8.2ASL,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 6.55VWM SL2-2
Description: TVS DIODE 6.55VWM SL2-2
auf Bestellung 10000 Stücke:
Lieferzeit 21-28 Tag (e)DF2B5M4SL,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.6VWM 24VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 30W
Power Line Protection: No
Description: TVS DIODE 3.6VWM 24VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 30W
Power Line Protection: No
auf Bestellung 80055 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
34+ | 0.78 EUR |
48+ | 0.55 EUR |
100+ | 0.28 EUR |
500+ | 0.23 EUR |
1000+ | 0.17 EUR |
2000+ | 0.14 EUR |
5000+ | 0.13 EUR |
DF2B6M4SL,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 25VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 25V
Power - Peak Pulse: 30W
Power Line Protection: No
Description: TVS DIODE 5.5VWM 25VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.6V
Voltage - Clamping (Max) @ Ipp: 25V
Power - Peak Pulse: 30W
Power Line Protection: No
auf Bestellung 12882 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
34+ | 0.78 EUR |
49+ | 0.54 EUR |
100+ | 0.27 EUR |
500+ | 0.22 EUR |
1000+ | 0.17 EUR |
2000+ | 0.14 EUR |
5000+ | 0.13 EUR |
DF2B7M3SL,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5VWM 20VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 50W
Power Line Protection: No
Description: TVS DIODE 5.5VWM 20VC SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2.5A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SL2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6V
Voltage - Clamping (Max) @ Ipp: 20V
Power - Peak Pulse: 50W
Power Line Protection: No
auf Bestellung 40659 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
34+ | 0.78 EUR |
48+ | 0.54 EUR |
100+ | 0.27 EUR |
500+ | 0.22 EUR |
1000+ | 0.17 EUR |
2000+ | 0.14 EUR |
5000+ | 0.13 EUR |
DF2S5.1ASL,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 1.5VWM SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Voltage - Reverse Standoff (Typ): 1.5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4.8V
Power Line Protection: No
Description: TVS DIODE 1.5VWM SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 45pF @ 1MHz
Voltage - Reverse Standoff (Typ): 1.5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 4.8V
Power Line Protection: No
auf Bestellung 2475 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
56+ | 0.47 EUR |
80+ | 0.32 EUR |
164+ | 0.16 EUR |
500+ | 0.13 EUR |
1000+ | 0.092 EUR |
2000+ | 0.08 EUR |
DF2S5.6ASL,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.5VWM SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 40pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Power Line Protection: No
Description: TVS DIODE 3.5VWM SL2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 40pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.3V
Power Line Protection: No
auf Bestellung 38256 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
56+ | 0.47 EUR |
80+ | 0.32 EUR |
164+ | 0.16 EUR |
500+ | 0.13 EUR |
1000+ | 0.092 EUR |
2000+ | 0.08 EUR |
5000+ | 0.074 EUR |
DF2S6.2ASL,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM SL2-2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 32pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5VWM SL2-2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 32pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Power Line Protection: No
Part Status: Active
auf Bestellung 79615 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
56+ | 0.47 EUR |
81+ | 0.32 EUR |
150+ | 0.17 EUR |
500+ | 0.14 EUR |
1000+ | 0.095 EUR |
2000+ | 0.078 EUR |
5000+ | 0.074 EUR |
DF2S6.8ASL,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5VWM SL2-2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5VWM SL2-2
Packaging: Cut Tape (CT)
Package / Case: 2-SMD, No Lead
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 25pF @ 1MHz
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SL2
Unidirectional Channels: 1
Voltage - Breakdown (Min): 6.4V
Power Line Protection: No
Part Status: Active
auf Bestellung 27644 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
56+ | 0.47 EUR |
79+ | 0.33 EUR |
163+ | 0.16 EUR |
500+ | 0.13 EUR |
1000+ | 0.093 EUR |
2000+ | 0.08 EUR |
5000+ | 0.075 EUR |
DF2S8.2ASL,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 6.55VWM SL2-2
Description: TVS DIODE 6.55VWM SL2-2
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)DF2S8.2ASL,L3F |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 6.55VWM SL2-2
Description: TVS DIODE 6.55VWM SL2-2
auf Bestellung 20000 Stücke:
Lieferzeit 21-28 Tag (e)TMPM333FWFG(C,J) |
Hersteller: Toshiba Semiconductor and Storage
Description: IC MCU 32BIT 128KB FLASH 100LQFP
Description: IC MCU 32BIT 128KB FLASH 100LQFP
Produkt ist nicht verfügbar
TMPM333FYFG(C) |
Hersteller: Toshiba Semiconductor and Storage
Description: IC MCU 32BIT 256KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -20°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: I²C, SIO, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Active
Number of I/O: 78
DigiKey Programmable: Not Verified
Description: IC MCU 32BIT 256KB FLASH 100LQFP
Packaging: Tray
Package / Case: 100-LQFP
Mounting Type: Surface Mount
Speed: 40MHz
Program Memory Size: 256KB (256K x 8)
RAM Size: 16K x 8
Operating Temperature: -20°C ~ 85°C (TA)
Oscillator Type: External
Program Memory Type: FLASH
Core Processor: ARM® Cortex®-M3
Data Converters: A/D 12x10b
Core Size: 32-Bit Single-Core
Voltage - Supply (Vcc/Vdd): 2.7V ~ 3.6V
Connectivity: I²C, SIO, UART/USART
Peripherals: POR, WDT
Supplier Device Package: 100-LQFP (14x14)
Part Status: Active
Number of I/O: 78
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
TMPM380FYFG(C) |
Hersteller: Toshiba Semiconductor and Storage
Description: IC MCU 32BIT 256KB FLASH 100LQFP
Description: IC MCU 32BIT 256KB FLASH 100LQFP
auf Bestellung 360 Stücke:
Lieferzeit 21-28 Tag (e)DF10G5M4N,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.6VWM 24VC 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: 10-DFN (2.5x1)
Bidirectional Channels: 4
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 30W
Power Line Protection: No
Description: TVS DIODE 3.6VWM 24VC 10DFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: 10-DFN (2.5x1)
Bidirectional Channels: 4
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 30W
Power Line Protection: No
Produkt ist nicht verfügbar
DF10G6M4N,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5V 25V 10DFN
Description: TVS DIODE 5.5V 25V 10DFN
Produkt ist nicht verfügbar
DF10G5M4N,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 3.6VWM 24VC 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: 10-DFN (2.5x1)
Bidirectional Channels: 4
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 30W
Power Line Protection: No
Description: TVS DIODE 3.6VWM 24VC 10DFN
Packaging: Cut Tape (CT)
Package / Case: 10-UFDFN
Mounting Type: Surface Mount
Type: Zener
Applications: General Purpose
Capacitance @ Frequency: 0.2pF @ 1MHz
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Voltage - Reverse Standoff (Typ): 3.6V (Max)
Supplier Device Package: 10-DFN (2.5x1)
Bidirectional Channels: 4
Voltage - Breakdown (Min): 4V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 30W
Power Line Protection: No
Produkt ist nicht verfügbar
DF10G6M4N,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: TVS DIODE 5.5V 25V 10DFN
Description: TVS DIODE 5.5V 25V 10DFN
auf Bestellung 1254 Stücke:
Lieferzeit 21-28 Tag (e)TC7WH125FE,LJ(CT |
Hersteller: Toshiba Semiconductor and Storage
Description: IC BUS BUFFER DUAL NONINV 8SSOP
Description: IC BUS BUFFER DUAL NONINV 8SSOP
Produkt ist nicht verfügbar
SSM6J507NU,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 10A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 6-UDFNB (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 15 V
Description: MOSFET P-CH 30V 10A 6UDFNB
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 6-UDFNB (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 15 V
Produkt ist nicht verfügbar
SSM6J507NU,LF |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET P-CH 30V 10A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 6-UDFNB (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 15 V
Description: MOSFET P-CH 30V 10A 6UDFNB
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 4A, 10V
Power Dissipation (Max): 1.25W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 6-UDFNB (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): +20V, -25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1150 pF @ 15 V
auf Bestellung 2758 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 1.04 EUR |
29+ | 0.9 EUR |
100+ | 0.62 EUR |
500+ | 0.49 EUR |
1000+ | 0.4 EUR |
TPH2R608NH,L1Q |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 75V 150A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 37.5 V
Description: MOSFET N-CH 75V 150A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150A (Tc)
Rds On (Max) @ Id, Vgs: 2.6mOhm @ 50A, 10V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 37.5 V
auf Bestellung 117473 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 3.54 EUR |
10+ | 2.88 EUR |
100+ | 2.24 EUR |
500+ | 1.9 EUR |
1000+ | 1.55 EUR |
2000+ | 1.46 EUR |
TPH2900ENH,L1Q |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 200V 33A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 16.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 100 V
Description: MOSFET N-CH 200V 33A 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 33A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 16.5A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: 8-SOP Advance (5x5)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 100 V
auf Bestellung 15173 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 5.95 EUR |
10+ | 4.96 EUR |
100+ | 3.94 EUR |
500+ | 3.34 EUR |
1000+ | 2.83 EUR |
2000+ | 2.69 EUR |
TK8P60W5,RVQ |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 560mOhm @ 4A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 400µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V
Description: MOSFET N-CH 600V 8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta)
Rds On (Max) @ Id, Vgs: 560mOhm @ 4A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 400µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 590 pF @ 300 V
auf Bestellung 15673 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 4.13 EUR |
10+ | 3.7 EUR |
100+ | 2.98 EUR |
500+ | 2.45 EUR |
1000+ | 2.03 EUR |
TK9P65W,RQ |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 9.3A DPAK
Description: MOSFET N-CH 650V 9.3A DPAK
auf Bestellung 4000 Stücke:
Lieferzeit 21-28 Tag (e)TK14G65W,RQ |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 13.7A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 690µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
Description: MOSFET N-CH 650V 13.7A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Rds On (Max) @ Id, Vgs: 250mOhm @ 6.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 690µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
auf Bestellung 3525 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 5.59 EUR |
10+ | 4.65 EUR |
100+ | 3.7 EUR |
500+ | 3.13 EUR |
TK14G65W5,RQ |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 13.7A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 690µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
Description: MOSFET N-CH 650V 13.7A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.7A (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 6.9A, 10V
Power Dissipation (Max): 130W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 690µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 300 V
Produkt ist nicht verfügbar
TK20V60W5,LVQ |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 600V 20A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
Description: MOSFET N-CH 600V 20A 4DFN
Packaging: Cut Tape (CT)
Package / Case: 4-VSFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: 4-DFN-EP (8x8)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 300 V
auf Bestellung 4812 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 7.05 EUR |
10+ | 5.91 EUR |
100+ | 4.78 EUR |
500+ | 4.25 EUR |
1000+ | 3.64 EUR |
TK6P65W,RQ |
Hersteller: Toshiba Semiconductor and Storage
Description: MOSFET N-CH 650V 5.8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2.9A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V
Description: MOSFET N-CH 650V 5.8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Ta)
Rds On (Max) @ Id, Vgs: 1.05Ohm @ 2.9A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 180µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 300 V
auf Bestellung 1246 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 3.64 EUR |
10+ | 3.25 EUR |
100+ | 2.54 EUR |
500+ | 2.1 EUR |
1000+ | 1.65 EUR |