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VS-25ETS12SLHM3 VS-25ETS12SLHM3 Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1.2KV 25A TO263AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 25 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 25A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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VS-25TTS12SLHM3 VS-25TTS12SLHM3 Vishay General Semiconductor - Diodes Division vs-25tts12slhm3.pdf Description: SCR 1.2KV 25A TO-263AB (D2PAK)
Part Status: Active
Supplier Device Package: TO-263AB (D2PAK)
Current - Off State (Max): 10 mA
Voltage - On State (Vtm) (Max): 1.25 V
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 16 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 350A @ 50Hz
Current - Gate Trigger (Igt) (Max): 45 mA
Current - Hold (Ih) (Max): 150 mA
Operating Temperature: -40°C ~ 125°C (TJ)
SCR Type: Standard Recovery
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Voltage - Off State: 1.2 kV
Current - On State (It (RMS)) (Max): 25 A
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VS-25TTS16SLHM3 VS-25TTS16SLHM3 Vishay General Semiconductor - Diodes Division vs-25tts16slhm3.pdf Description: SCR 1.6KV 25A TO-263AB (D2PAK)
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 25 A
Part Status: Active
Supplier Device Package: TO-263AB (D2PAK)
Current - Off State (Max): 10 mA
Voltage - On State (Vtm) (Max): 1.25 V
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 16 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 350A @ 50Hz
Current - Gate Trigger (Igt) (Max): 45 mA
Current - Hold (Ih) (Max): 150 mA
Operating Temperature: -40°C ~ 125°C (TJ)
SCR Type: Standard Recovery
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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VS-50TPS12LHM3 VS-50TPS12LHM3 Vishay General Semiconductor - Diodes Division vs-50tps12lhm3.pdf Description: SCR 1.2KV 79A TO247AD
Qualification: AEC-Q101
Grade: Automotive
Voltage - Off State: 1.2 kV
Current - On State (It (RMS)) (Max): 79 A
Part Status: Active
Supplier Device Package: TO-247AD
Current - Off State (Max): 50 µA
Voltage - On State (Vtm) (Max): 1.6 V
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (AV)) (Max): 50 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 630A @ 50Hz
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Hold (Ih) (Max): 300 mA
Operating Temperature: -40°C ~ 125°C (TJ)
SCR Type: Standard Recovery
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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VS-8EWF06SLHM3 VS-8EWF06SLHM3 Vishay General Semiconductor - Diodes Division vs-8ewf06slhm3.pdf Description: DIODE STANDARD 600V 8A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
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VS-8EWS12SLHM3 VS-8EWS12SLHM3 Vishay General Semiconductor - Diodes Division vs-8ews12shm3.pdf Description: DIODE STANDARD 1200V 8A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Qualification: AEC-Q101
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VS-8EWS16SLHM3 VS-8EWS16SLHM3 Vishay General Semiconductor - Diodes Division vs-8ews16slhm3.pdf Description: DIODE STANDARD 1600V 8A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 1600 V
Qualification: AEC-Q101
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1N4148WS-HG3-08 1N4148WS-HG3-08 Vishay General Semiconductor - Diodes Division 1n4148wsg.pdf Description: DIODE STANDARD 100V 150MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Qualification: AEC-Q101
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1N4148WS-HG3-18 1N4148WS-HG3-18 Vishay General Semiconductor - Diodes Division 1n4148wsg.pdf Description: DIODE STANDARD 100V 150MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Qualification: AEC-Q101
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VS-10CDU06-M3/I VS-10CDU06-M3/I Vishay General Semiconductor - Diodes Division vs-10cdu06-m3.pdf Description: DIODE ARRAY GP 600V 5A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
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BYG10YHE3_A/H BYG10YHE3_A/H Vishay General Semiconductor - Diodes Division byg10.pdf Description: DIODE AVAL 1.6KV 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1600 V
Qualification: AEC-Q101
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BYG10YHE3_A/I BYG10YHE3_A/I Vishay General Semiconductor - Diodes Division byg10.pdf Description: DIODE AVAL 1.6KV 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1600 V
Qualification: AEC-Q101
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BYG10YHM3_A/H BYG10YHM3_A/H Vishay General Semiconductor - Diodes Division byg10.pdf Description: DIODE AVAL 1.6KV 1.5A DO214AC
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Technology: Avalanche
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 1600 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
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BYG10YHM3_A/I BYG10YHM3_A/I Vishay General Semiconductor - Diodes Division byg10.pdf Description: DIODE AVAL 1.6KV 1.5A DO214AC
Technology: Avalanche
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 1600 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
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1.5KE250A-E3/73 1.5KE250A-E3/73 Vishay General Semiconductor - Diodes Division 15ke.pdf Description: TVS DIODE 214VWM 344VC 1.5KE
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.4A
Voltage - Reverse Standoff (Typ): 214V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 237V
Voltage - Clamping (Max) @ Ipp: 344V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
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1.5KE30A-E3/73 1.5KE30A-E3/73 Vishay General Semiconductor - Diodes Division 15ke.pdf Description: TVS DIODE 25.6VWM 41.4VC 1.5KE
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36.2A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
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1N4002-E3/53 1N4002-E3/53 Vishay General Semiconductor - Diodes Division 1n4001.pdf Description: DIODE STANDARD 100V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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1N4003GP-E3/73 1N4003GP-E3/73 Vishay General Semiconductor - Diodes Division 1n4001gp.pdf Description: DIODE STANDARD 200V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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1N4005-E3/73 1N4005-E3/73 Vishay General Semiconductor - Diodes Division 1n4001.pdf Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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1N4005GP-E3/73 1N4005GP-E3/73 Vishay General Semiconductor - Diodes Division 1n4001gp.pdf Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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1N4007-E3/53 1N4007-E3/53 Vishay General Semiconductor - Diodes Division 1n4001.pdf Description: DIODE STANDARD 1000V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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1N4007E-E3/73 1N4007E-E3/73 Vishay General Semiconductor - Diodes Division 1n4001.pdf Description: DIODE STANDARD 1000V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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1N4007GP-E3/73 1N4007GP-E3/73 Vishay General Semiconductor - Diodes Division 1n4001gp.pdf Description: DIODE STANDARD 1000V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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1N4007GPE-E3/73 1N4007GPE-E3/73 Vishay General Semiconductor - Diodes Division 1n4001gp.pdf Description: DIODE STANDARD 1000V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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1N4936GP-E3/73 1N4936GP-E3/73 Vishay General Semiconductor - Diodes Division 1n4933gp.pdf Description: DIODE STANDARD 400V 1A DO204AL
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
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1N4937-E3/73 1N4937-E3/73 Vishay General Semiconductor - Diodes Division 1n4933.pdf Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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1N4937GP-E3/73 1N4937GP-E3/73 Vishay General Semiconductor - Diodes Division 1n4933gp.pdf Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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1N4947GP-E3/73 1N4947GP-E3/73 Vishay General Semiconductor - Diodes Division 1n4942gp.pdf Description: DIODE GEN PURP 800V 1A DO204AL
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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1N5227B-TAP 1N5227B-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 3.6V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 15 µA @ 1 V
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1N5229B-TAP 1N5229B-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 4.3V 500MW DO204AH
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 22 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
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1N4934-E3/73 1N4934-E3/73 Vishay General Semiconductor - Diodes Division 1n4933.pdf Description: DIODE STANDARD 100V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
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1N5399GP-E3/73 1N5399GP-E3/73 Vishay General Semiconductor - Diodes Division 1n5391gp.pdf Description: DIODE STD 1000V 1.5A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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1N5401-E3/73 1N5401-E3/73 Vishay General Semiconductor - Diodes Division 1n5400.pdf Description: DIODE STANDARD 100V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 2119 Stücke:
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1N5402-E3/73 1N5402-E3/73 Vishay General Semiconductor - Diodes Division 1n5400.pdf Description: DIODE STANDARD 200V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 1728 Stücke:
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1N5404-E3/73 1N5404-E3/73 Vishay General Semiconductor - Diodes Division 1n5400.pdf Description: DIODE STANDARD 400V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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1N5406-E3/73 1N5406-E3/73 Vishay General Semiconductor - Diodes Division 1n5400.pdf Description: DIODE STANDARD 600V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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1N5407-E3/73 1N5407-E3/73 Vishay General Semiconductor - Diodes Division 1n5400.pdf Description: DIODE STANDARD 800V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 952 Stücke:
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1N5817-E3/73 1N5817-E3/73 Vishay General Semiconductor - Diodes Division 1n5817.pdf Description: DIODE SCHOTTKY 20V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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BAW76-TAP BAW76-TAP Vishay General Semiconductor - Diodes Division baw76.pdf Description: DIODE STANDARD 50V 300MA DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
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BY228-15TAP BY228-15TAP Vishay General Semiconductor - Diodes Division by22813.pdf Description: DIODE AVALANCHE 1200V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: 140°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
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5KP33A-E3/73 5KP33A-E3/73 Vishay General Semiconductor - Diodes Division 5KP5.0%20thru%205KP188A.pdf Description: TVS DIODE 33VWM 53.3VC P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 93.8A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
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BY448GP-E3/73 BY448GP-E3/73 Vishay General Semiconductor - Diodes Division by448gp.pdf Description: DIODE GP 1.65KV 1.5A DO204AC
Current - Reverse Leakage @ Vr: 5 µA @ 1650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1650 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Technology: Standard
Reverse Recovery Time (trr): 20 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Cut Tape (CT)
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BYT52M-TAP BYT52M-TAP Vishay General Semiconductor - Diodes Division byt52.pdf Description: DIODE AVALANCHE 1KV 1.4A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1.4A
Technology: Avalanche
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Cut Tape (CT)
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BYT62-TAP BYT62-TAP Vishay General Semiconductor - Diodes Division byt62.pdf Description: DIODE AVAL 2.4KV 350MA SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 2400 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 2400 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 350mA
Technology: Avalanche
Reverse Recovery Time (trr): 5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Cut Tape (CT)
auf Bestellung 7931 Stücke:
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BYV26A-TAP BYV26A-TAP Vishay General Semiconductor - Diodes Division byv26.pdf Description: DIODE AVALANCHE 200V 1A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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5+4.46 EUR
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500+1.56 EUR
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BYV26B-TAP BYV26B-TAP Vishay General Semiconductor - Diodes Division byv26.pdf Description: DIODE AVALANCHE 400V 1A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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BYV26D-TAP BYV26D-TAP Vishay General Semiconductor - Diodes Division byv26.pdf Description: DIODE AVALANCHE 800V 1A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 6730 Stücke:
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5+4.61 EUR
10+2.96 EUR
100+2.01 EUR
500+1.61 EUR
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BYV27-150-TAP BYV27-150-TAP Vishay General Semiconductor - Diodes Division byv27.pdf Description: DIODE AVALANCHE 165V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 165 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 165 V
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BYV28-150-TAP BYV28-150-TAP Vishay General Semiconductor - Diodes Division byv2850.pdf Description: DIODE AVALANCHE 150V 3.5A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 3.5A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
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BYV38-TAP BYV38-TAP Vishay General Semiconductor - Diodes Division byv37.pdf Description: DIODE AVALANCHE 1000V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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BYW34-TAP BYW34-TAP Vishay General Semiconductor - Diodes Division byw32.pdf Description: DIODE AVALANCHE 400V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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BYW54-TAP BYW54-TAP Vishay General Semiconductor - Diodes Division byw52.pdf Description: DIODE AVALANCHE 600V 2A SOD57
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Technology: Avalanche
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Cut Tape (CT)
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BYW55-TAP BYW55-TAP Vishay General Semiconductor - Diodes Division byw52.pdf Description: DIODE AVALANCHE 800V 2A SOD57
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Technology: Avalanche
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Cut Tape (CT)
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EGP10G-E3/73 EGP10G-E3/73 Vishay General Semiconductor - Diodes Division egp10a.pdf Description: DIODE STANDARD 400V 1A DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
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EGP20B-E3/73 EGP20B-E3/73 Vishay General Semiconductor - Diodes Division egp20a.pdf Description: DIODE GEN PURP 100V 2A DO204AC
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Cut Tape (CT)
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BZT03C180-TAP BZT03C180-TAP Vishay General Semiconductor - Diodes Division bzt03.pdf Description: DIODE ZENER 180V 1.3W SOD57
Current - Reverse Leakage @ Vr: 1 µA @ 130 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: SOD-57
Impedance (Max) (Zzt): 400 Ohms
Voltage - Zener (Nom) (Vz): 180 V
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Tolerance: ±6.39%
Packaging: Cut Tape (CT)
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BZT03C18-TAP BZT03C18-TAP Vishay General Semiconductor - Diodes Division bzt03.pdf Description: DIODE ZENER 18V 1.3W SOD57
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Tolerance: ±6.39%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 13 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: SOD-57
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 18 V
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BZT03C12-TAP BZT03C12-TAP Vishay General Semiconductor - Diodes Division bzt03.pdf Description: DIODE ZENER 12V 1.3W SOD57
Current - Reverse Leakage @ Vr: 3 µA @ 9.1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: SOD-57
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Tolerance: ±5.42%
Packaging: Cut Tape (CT)
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BZT03C24-TAP BZT03C24-TAP Vishay General Semiconductor - Diodes Division bzt03.pdf Description: TVS DIODE 20VWM 33.8VC SOD57
Current - Reverse Leakage @ Vr: 1 µA @ 18 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: SOD-57
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Tolerance: ±5.83%
Packaging: Cut Tape (CT)
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BZT03C47-TAP BZT03C47-TAP Vishay General Semiconductor - Diodes Division bzt03.pdf Description: DIODE ZENER 47V 1.3W SOD57
Current - Reverse Leakage @ Vr: 1 µA @ 36 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: SOD-57
Impedance (Max) (Zzt): 45 Ohms
Voltage - Zener (Nom) (Vz): 47 V
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Tolerance: ±6.38%
Packaging: Cut Tape (CT)
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VS-25ETS12SLHM3
VS-25ETS12SLHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 25A TO263AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 25 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io): 25A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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VS-25TTS12SLHM3 vs-25tts12slhm3.pdf
VS-25TTS12SLHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SCR 1.2KV 25A TO-263AB (D2PAK)
Part Status: Active
Supplier Device Package: TO-263AB (D2PAK)
Current - Off State (Max): 10 mA
Voltage - On State (Vtm) (Max): 1.25 V
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 16 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 350A @ 50Hz
Current - Gate Trigger (Igt) (Max): 45 mA
Current - Hold (Ih) (Max): 150 mA
Operating Temperature: -40°C ~ 125°C (TJ)
SCR Type: Standard Recovery
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Voltage - Off State: 1.2 kV
Current - On State (It (RMS)) (Max): 25 A
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VS-25TTS16SLHM3 vs-25tts16slhm3.pdf
VS-25TTS16SLHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SCR 1.6KV 25A TO-263AB (D2PAK)
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 25 A
Part Status: Active
Supplier Device Package: TO-263AB (D2PAK)
Current - Off State (Max): 10 mA
Voltage - On State (Vtm) (Max): 1.25 V
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 16 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 350A @ 50Hz
Current - Gate Trigger (Igt) (Max): 45 mA
Current - Hold (Ih) (Max): 150 mA
Operating Temperature: -40°C ~ 125°C (TJ)
SCR Type: Standard Recovery
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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VS-50TPS12LHM3 vs-50tps12lhm3.pdf
VS-50TPS12LHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SCR 1.2KV 79A TO247AD
Qualification: AEC-Q101
Grade: Automotive
Voltage - Off State: 1.2 kV
Current - On State (It (RMS)) (Max): 79 A
Part Status: Active
Supplier Device Package: TO-247AD
Current - Off State (Max): 50 µA
Voltage - On State (Vtm) (Max): 1.6 V
Voltage - Gate Trigger (Vgt) (Max): 1.5 V
Current - On State (It (AV)) (Max): 50 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 630A @ 50Hz
Current - Gate Trigger (Igt) (Max): 100 mA
Current - Hold (Ih) (Max): 300 mA
Operating Temperature: -40°C ~ 125°C (TJ)
SCR Type: Standard Recovery
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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VS-8EWF06SLHM3 vs-8ewf06slhm3.pdf
VS-8EWF06SLHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 8A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Grade: Automotive
Qualification: AEC-Q101
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VS-8EWS12SLHM3 vs-8ews12shm3.pdf
VS-8EWS12SLHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 8A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Qualification: AEC-Q101
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VS-8EWS16SLHM3 vs-8ews16slhm3.pdf
VS-8EWS16SLHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1600V 8A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 1600 V
Qualification: AEC-Q101
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1N4148WS-HG3-08 1n4148wsg.pdf
1N4148WS-HG3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 150MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Qualification: AEC-Q101
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1N4148WS-HG3-18 1n4148wsg.pdf
1N4148WS-HG3-18
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 150MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Current - Average Rectified (Io): 150mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-10CDU06-M3/I vs-10cdu06-m3.pdf
VS-10CDU06-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 600V 5A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 5A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 3 µA @ 600 V
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100+1.81 EUR
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BYG10YHE3_A/H byg10.pdf
BYG10YHE3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 1.6KV 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1600 V
Qualification: AEC-Q101
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BYG10YHE3_A/I byg10.pdf
BYG10YHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 1.6KV 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1600 V
Qualification: AEC-Q101
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500+0.42 EUR
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BYG10YHM3_A/H byg10.pdf
BYG10YHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 1.6KV 1.5A DO214AC
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
Technology: Avalanche
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 1600 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
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BYG10YHM3_A/I byg10.pdf
BYG10YHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 1.6KV 1.5A DO214AC
Technology: Avalanche
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 1 µA @ 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Voltage - DC Reverse (Vr) (Max): 1600 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: DO-214AC (SMA)
Current - Average Rectified (Io): 1.5A
auf Bestellung 29727 Stücke:
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1.5KE250A-E3/73 15ke.pdf
1.5KE250A-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 214VWM 344VC 1.5KE
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.4A
Voltage - Reverse Standoff (Typ): 214V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 237V
Voltage - Clamping (Max) @ Ipp: 344V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
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1.5KE30A-E3/73 15ke.pdf
1.5KE30A-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 25.6VWM 41.4VC 1.5KE
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36.2A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
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1N4002-E3/53 1n4001.pdf
1N4002-E3/53
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 2074 Stücke:
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1N4003GP-E3/73 1n4001gp.pdf
1N4003GP-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 5842 Stücke:
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1N4005-E3/73 1n4001.pdf
1N4005-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 5744 Stücke:
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1N4005GP-E3/73 1n4001gp.pdf
1N4005GP-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 5070 Stücke:
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9+2.43 EUR
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1N4007-E3/53 1n4001.pdf
1N4007-E3/53
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 434 Stücke:
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1N4007E-E3/73 1n4001.pdf
1N4007E-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 2951 Stücke:
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1N4007GP-E3/73 1n4001gp.pdf
1N4007GP-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 3912 Stücke:
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1N4007GPE-E3/73 1n4001gp.pdf
1N4007GPE-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 3814 Stücke:
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1N4936GP-E3/73 1n4933gp.pdf
1N4936GP-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 1A DO204AL
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
auf Bestellung 2515 Stücke:
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1N4937-E3/73 1n4933.pdf
1N4937-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 2222 Stücke:
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1N4937GP-E3/73 1n4933gp.pdf
1N4937GP-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 6708 Stücke:
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8+2.68 EUR
13+1.69 EUR
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1N4947GP-E3/73 1n4942gp.pdf
1N4947GP-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A DO204AL
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 250 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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1N5227B-TAP 1n5221.pdf
1N5227B-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.6V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 15 µA @ 1 V
auf Bestellung 12242 Stücke:
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20+1.05 EUR
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1N5229B-TAP 1n5221.pdf
1N5229B-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.3V 500MW DO204AH
Tolerance: ±5%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: DO-204AH (DO-35)
Impedance (Max) (Zzt): 22 Ohms
Voltage - Zener (Nom) (Vz): 4.3 V
Operating Temperature: 175°C
Mounting Type: Through Hole
Package / Case: DO-204AH, DO-35, Axial
auf Bestellung 9021 Stücke:
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100+0.21 EUR
141+0.14 EUR
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500+0.06 EUR
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1N4934-E3/73 1n4933.pdf
1N4934-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 3978 Stücke:
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19+1.13 EUR
30+0.7 EUR
100+0.45 EUR
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1N5399GP-E3/73 1n5391gp.pdf
1N5399GP-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 1000V 1.5A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 5793 Stücke:
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7+3.47 EUR
10+2.2 EUR
100+1.48 EUR
500+1.17 EUR
1000+1.07 EUR
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1N5401-E3/73 1n5400.pdf
1N5401-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 2119 Stücke:
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AnzahlPrivatkunde
8+2.75 EUR
13+1.73 EUR
100+1.14 EUR
500+0.89 EUR
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1N5402-E3/73 1n5400.pdf
1N5402-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
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1N5404-E3/73 1n5400.pdf
1N5404-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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1N5406-E3/73 1n5400.pdf
1N5406-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
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1N5407-E3/73 1n5400.pdf
1N5407-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 800V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
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1N5817-E3/73 1n5817.pdf
1N5817-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
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BAW76-TAP baw76.pdf
BAW76-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 50V 300MA DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1930 Stücke:
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125+0.17 EUR
345+0.061 EUR
372+0.056 EUR
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BY228-15TAP by22813.pdf
BY228-15TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1200V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: 140°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
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5KP33A-E3/73 5KP5.0%20thru%205KP188A.pdf
5KP33A-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33VWM 53.3VC P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 93.8A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
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5+5.18 EUR
10+5 EUR
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BY448GP-E3/73 by448gp.pdf
BY448GP-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.65KV 1.5A DO204AC
Current - Reverse Leakage @ Vr: 5 µA @ 1650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 1650 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 1.5A
Technology: Standard
Reverse Recovery Time (trr): 20 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Cut Tape (CT)
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BYT52M-TAP byt52.pdf
BYT52M-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1.4A SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 1000 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 1.4A
Technology: Avalanche
Reverse Recovery Time (trr): 200 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Cut Tape (CT)
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BYT62-TAP byt62.pdf
BYT62-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 2.4KV 350MA SOD57
Current - Reverse Leakage @ Vr: 5 µA @ 2400 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 2400 V
Operating Temperature - Junction: 175°C (Max)
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 350mA
Technology: Avalanche
Reverse Recovery Time (trr): 5 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Cut Tape (CT)
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BYV26A-TAP byv26.pdf
BYV26A-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 1A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 4143 Stücke:
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BYV26B-TAP byv26.pdf
BYV26B-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 1A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 4506 Stücke:
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BYV26D-TAP byv26.pdf
BYV26D-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 1A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 6730 Stücke:
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5+4.61 EUR
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BYV27-150-TAP byv27.pdf
BYV27-150-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 165V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 165 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 165 V
auf Bestellung 2217 Stücke:
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BYV28-150-TAP byv2850.pdf
BYV28-150-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 150V 3.5A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 3.5A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
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BYV38-TAP byv37.pdf
BYV38-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1000V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
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15+1.46 EUR
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BYW34-TAP byw32.pdf
BYW34-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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BYW54-TAP byw52.pdf
BYW54-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 2A SOD57
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Technology: Avalanche
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Cut Tape (CT)
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BYW55-TAP byw52.pdf
BYW55-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 2A SOD57
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 800 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: SOD-57
Current - Average Rectified (Io): 2A
Technology: Avalanche
Reverse Recovery Time (trr): 4 µs
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Packaging: Cut Tape (CT)
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EGP10G-E3/73 egp10a.pdf
EGP10G-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 1A DO204AL
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-204AL (DO-41)
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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EGP20B-E3/73 egp20a.pdf
EGP20B-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 2A DO204AC
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-204AC (DO-15)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AC, DO-15, Axial
Packaging: Cut Tape (CT)
auf Bestellung 3994 Stücke:
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13+1.68 EUR
16+1.37 EUR
100+1.07 EUR
500+0.9 EUR
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BZT03C180-TAP bzt03.pdf
BZT03C180-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 180V 1.3W SOD57
Current - Reverse Leakage @ Vr: 1 µA @ 130 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: SOD-57
Impedance (Max) (Zzt): 400 Ohms
Voltage - Zener (Nom) (Vz): 180 V
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Tolerance: ±6.39%
Packaging: Cut Tape (CT)
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6+3.96 EUR
10+2.53 EUR
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BZT03C18-TAP bzt03.pdf
BZT03C18-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 18V 1.3W SOD57
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Tolerance: ±6.39%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 13 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: SOD-57
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 18 V
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BZT03C12-TAP bzt03.pdf
BZT03C12-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 1.3W SOD57
Current - Reverse Leakage @ Vr: 3 µA @ 9.1 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: SOD-57
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 12 V
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Tolerance: ±5.42%
Packaging: Cut Tape (CT)
auf Bestellung 2825 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
15+1.43 EUR
19+1.13 EUR
100+0.79 EUR
500+0.62 EUR
1000+0.52 EUR
Mindestbestellmenge: 15 Stücke
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BZT03C24-TAP bzt03.pdf
BZT03C24-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 20VWM 33.8VC SOD57
Current - Reverse Leakage @ Vr: 1 µA @ 18 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: SOD-57
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 24 V
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Tolerance: ±5.83%
Packaging: Cut Tape (CT)
auf Bestellung 1071 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
15+1.46 EUR
22+0.99 EUR
100+0.68 EUR
500+0.54 EUR
1000+0.49 EUR
Mindestbestellmenge: 15 Stücke
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BZT03C47-TAP bzt03.pdf
BZT03C47-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 47V 1.3W SOD57
Current - Reverse Leakage @ Vr: 1 µA @ 36 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Power - Max: 1.3 W
Part Status: Active
Supplier Device Package: SOD-57
Impedance (Max) (Zzt): 45 Ohms
Voltage - Zener (Nom) (Vz): 47 V
Operating Temperature: 175°C (TJ)
Mounting Type: Through Hole
Package / Case: SOD-57, Axial
Tolerance: ±6.38%
Packaging: Cut Tape (CT)
auf Bestellung 503 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
13+1.63 EUR
20+1.09 EUR
100+0.76 EUR
500+0.63 EUR
Mindestbestellmenge: 13 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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