Produkte > VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION > Alle Produkte des Herstellers VISHAY GENERAL SEMICONDUCTOR - DIODES DIVISION (40787) > Seite 400 nach 680

Wählen Sie Seite:   [  << Vorherige Seite ]  1 68 136 204 272 340 395 396 397 398 399 400 401 402 403 404 405 408 476 544 612 680  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
BYG10YHE3_A/I BYG10YHE3_A/I Vishay General Semiconductor - Diodes Division byg10.pdf Description: DIODE AVAL 1.6KV 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1600 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3093 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.7 EUR
33+0.55 EUR
100+0.45 EUR
500+0.35 EUR
1000+0.28 EUR
2000+0.25 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
BYG10YHM3_A/H BYG10YHM3_A/H Vishay General Semiconductor - Diodes Division byg10.pdf Description: DIODE AVAL 1.6KV 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1600 V
Qualification: AEC-Q101
auf Bestellung 14508 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.74 EUR
30+0.59 EUR
100+0.47 EUR
500+0.35 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
BYG10YHM3_A/I BYG10YHM3_A/I Vishay General Semiconductor - Diodes Division byg10.pdf Description: DIODE AVAL 1.6KV 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1600 V
Qualification: AEC-Q101
auf Bestellung 29727 Stücke:
Lieferzeit 10-14 Tag (e)
20+0.88 EUR
29+0.62 EUR
100+0.47 EUR
500+0.35 EUR
1000+0.3 EUR
2000+0.28 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
1.5KE250A-E3/73 1.5KE250A-E3/73 Vishay General Semiconductor - Diodes Division 15ke.pdf Description: TVS DIODE 214VWM 344VC 1.5KE
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.4A
Voltage - Reverse Standoff (Typ): 214V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 237V
Voltage - Clamping (Max) @ Ipp: 344V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.45 EUR
12+1.55 EUR
100+1.03 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
1.5KE30A-E3/73 1.5KE30A-E3/73 Vishay General Semiconductor - Diodes Division 15ke.pdf Description: TVS DIODE 25.6VWM 41.4VC 1.5KE
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36.2A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N4002-E3/53 1N4002-E3/53 Vishay General Semiconductor - Diodes Division 1n4001.pdf Description: DIODE STANDARD 100V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 2704 Stücke:
Lieferzeit 10-14 Tag (e)
56+0.32 EUR
89+0.2 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.11 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH
1N4003GP-E3/73 1N4003GP-E3/73 Vishay General Semiconductor - Diodes Division 1n4001gp.pdf Description: DIODE STANDARD 200V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 5852 Stücke:
Lieferzeit 10-14 Tag (e)
19+0.93 EUR
29+0.63 EUR
100+0.51 EUR
500+0.39 EUR
1000+0.35 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
1N4005-E3/73 1N4005-E3/73 Vishay General Semiconductor - Diodes Division 1n4001.pdf Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 5759 Stücke:
Lieferzeit 10-14 Tag (e)
67+0.26 EUR
96+0.18 EUR
118+0.15 EUR
500+0.11 EUR
1000+0.097 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
1N4005GP-E3/73 1N4005GP-E3/73 Vishay General Semiconductor - Diodes Division 1n4001gp.pdf Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 5274 Stücke:
Lieferzeit 10-14 Tag (e)
20+0.92 EUR
29+0.62 EUR
100+0.51 EUR
500+0.39 EUR
1000+0.35 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
1N4007-E3/53 1N4007-E3/53 Vishay General Semiconductor - Diodes Division 1n4001.pdf Description: DIODE STANDARD 1000V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 914 Stücke:
Lieferzeit 10-14 Tag (e)
48+0.37 EUR
74+0.24 EUR
100+0.2 EUR
500+0.15 EUR
Mindestbestellmenge: 48
Im Einkaufswagen  Stück im Wert von  UAH
1N4007E-E3/73 1N4007E-E3/73 Vishay General Semiconductor - Diodes Division 1n4001.pdf Description: DIODE STANDARD 1000V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 1446 Stücke:
Lieferzeit 10-14 Tag (e)
42+0.42 EUR
62+0.29 EUR
100+0.2 EUR
500+0.15 EUR
1000+0.13 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
1N4007GP-E3/73 1N4007GP-E3/73 Vishay General Semiconductor - Diodes Division 1n4001gp.pdf Description: DIODE STANDARD 1000V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 4434 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.09 EUR
24+0.75 EUR
100+0.48 EUR
500+0.37 EUR
1000+0.33 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
1N4007GPE-E3/73 1N4007GPE-E3/73 Vishay General Semiconductor - Diodes Division 1n4001gp.pdf Description: DIODE STANDARD 1000V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 3848 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.13 EUR
25+0.73 EUR
100+0.47 EUR
500+0.36 EUR
1000+0.32 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
1N4936GP-E3/73 1N4936GP-E3/73 Vishay General Semiconductor - Diodes Division 1n4933gp.pdf Description: DIODE STANDARD 400V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 2525 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.04 EUR
23+0.78 EUR
100+0.56 EUR
500+0.45 EUR
1000+0.35 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
1N4937-E3/73 1N4937-E3/73 Vishay General Semiconductor - Diodes Division 1n4933.pdf Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 2486 Stücke:
Lieferzeit 10-14 Tag (e)
72+0.25 EUR
106+0.17 EUR
132+0.13 EUR
Mindestbestellmenge: 72
Im Einkaufswagen  Stück im Wert von  UAH
1N4937GP-E3/73 1N4937GP-E3/73 Vishay General Semiconductor - Diodes Division 1n4933gp.pdf Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 6708 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.09 EUR
26+0.68 EUR
100+0.44 EUR
500+0.37 EUR
1000+0.31 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
1N4947GP-E3/73 1N4947GP-E3/73 Vishay General Semiconductor - Diodes Division 1n4942gp.pdf Description: DIODE GEN PURP 800V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N5227B-TAP 1N5227B-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 3.6V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 15 µA @ 1 V
auf Bestellung 12257 Stücke:
Lieferzeit 10-14 Tag (e)
91+0.19 EUR
127+0.14 EUR
290+0.061 EUR
500+0.058 EUR
1000+0.047 EUR
2000+0.046 EUR
Mindestbestellmenge: 91
Im Einkaufswagen  Stück im Wert von  UAH
1N5229B-TAP 1N5229B-TAP Vishay General Semiconductor - Diodes Division 1n5221.pdf Description: DIODE ZENER 4.3V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
auf Bestellung 9021 Stücke:
Lieferzeit 10-14 Tag (e)
100+0.18 EUR
141+0.12 EUR
322+0.055 EUR
500+0.05 EUR
1000+0.041 EUR
2000+0.04 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
1N4934-E3/73 1N4934-E3/73 Vishay General Semiconductor - Diodes Division 1n4933.pdf Description: DIODE STANDARD 100V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 3978 Stücke:
Lieferzeit 10-14 Tag (e)
32+0.56 EUR
46+0.39 EUR
100+0.21 EUR
500+0.16 EUR
1000+0.14 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
1N5399GP-E3/73 1N5399GP-E3/73 Vishay General Semiconductor - Diodes Division 1n5391gp.pdf Description: DIODE STD 1000V 1.5A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 5793 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.41 EUR
20+0.91 EUR
100+0.59 EUR
500+0.46 EUR
1000+0.41 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
1N5401-E3/73 1N5401-E3/73 Vishay General Semiconductor - Diodes Division 1n5400.pdf Description: DIODE STANDARD 100V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 2134 Stücke:
Lieferzeit 10-14 Tag (e)
19+0.95 EUR
29+0.62 EUR
100+0.52 EUR
500+0.4 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
1N5402-E3/73 1N5402-E3/73 Vishay General Semiconductor - Diodes Division 1n5400.pdf Description: DIODE STANDARD 200V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 1768 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.04 EUR
28+0.64 EUR
100+0.38 EUR
500+0.35 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
1N5404-E3/73 1N5404-E3/73 Vishay General Semiconductor - Diodes Division 1n5400.pdf Description: DIODE STANDARD 400V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 315 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.16 EUR
23+0.78 EUR
100+0.51 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
1N5406-E3/73 1N5406-E3/73 Vishay General Semiconductor - Diodes Division 1n5400.pdf Description: DIODE STANDARD 600V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 36 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.18 EUR
23+0.77 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
1N5407-E3/73 1N5407-E3/73 Vishay General Semiconductor - Diodes Division 1n5400.pdf Description: DIODE STANDARD 800V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 958 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.06 EUR
27+0.67 EUR
100+0.4 EUR
500+0.36 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
1N5817-E3/73 1N5817-E3/73 Vishay General Semiconductor - Diodes Division 1n5817.pdf Description: DIODE SCHOTTKY 20V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
auf Bestellung 2112 Stücke:
Lieferzeit 10-14 Tag (e)
44+0.4 EUR
60+0.3 EUR
100+0.22 EUR
500+0.16 EUR
1000+0.14 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
BAW76-TAP BAW76-TAP Vishay General Semiconductor - Diodes Division baw76.pdf Description: DIODE STANDARD 50V 300MA DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1930 Stücke:
Lieferzeit 10-14 Tag (e)
125+0.14 EUR
345+0.051 EUR
372+0.047 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
BY228-15TAP BY228-15TAP Vishay General Semiconductor - Diodes Division by22813.pdf Description: DIODE AVALANCHE 1200V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: 140°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
auf Bestellung 3378 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.94 EUR
14+1.29 EUR
100+1.04 EUR
500+0.82 EUR
1000+0.75 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
5KP33A-E3/73 5KP33A-E3/73 Vishay General Semiconductor - Diodes Division 5KP5.0%20thru%205KP188A.pdf Description: TVS DIODE 33VWM 53.3VC P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 93.8A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BY448GP-E3/73 BY448GP-E3/73 Vishay General Semiconductor - Diodes Division by448gp.pdf Description: DIODE GP 1.65KV 1.5A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 µs
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1650 V
auf Bestellung 508 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.85 EUR
15+1.23 EUR
100+0.93 EUR
500+0.75 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
BYT52M-TAP BYT52M-TAP Vishay General Semiconductor - Diodes Division byt52.pdf Description: DIODE AVALANCHE 1KV 1.4A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.4A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
BYT62-TAP BYT62-TAP Vishay General Semiconductor - Diodes Division byt62.pdf Description: DIODE AVAL 2.4KV 350MA SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Avalanche
Current - Average Rectified (Io): 350mA
Supplier Device Package: SOD-57
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 2400 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 2400 V
auf Bestellung 7931 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.09 EUR
11+1.71 EUR
100+1.33 EUR
500+1.13 EUR
1000+0.92 EUR
2000+0.86 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
BYV26A-TAP BYV26A-TAP Vishay General Semiconductor - Diodes Division byv26.pdf Description: DIODE AVALANCHE 200V 1A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYV26B-TAP BYV26B-TAP Vishay General Semiconductor - Diodes Division byv26.pdf Description: DIODE AVALANCHE 400V 1A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 2391 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.18 EUR
23+0.77 EUR
100+0.61 EUR
500+0.47 EUR
1000+0.41 EUR
2000+0.39 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
BYV26D-TAP BYV26D-TAP Vishay General Semiconductor - Diodes Division byv26.pdf Description: DIODE AVALANCHE 800V 1A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 6915 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.28 EUR
22+0.82 EUR
100+0.65 EUR
500+0.5 EUR
1000+0.44 EUR
2000+0.41 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
BYV27-150-TAP BYV27-150-TAP Vishay General Semiconductor - Diodes Division byv27.pdf Description: DIODE AVALANCHE 165V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 165 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 165 V
auf Bestellung 2353 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.27 EUR
20+0.89 EUR
100+0.7 EUR
500+0.54 EUR
1000+0.48 EUR
2000+0.45 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
BYV28-150-TAP BYV28-150-TAP Vishay General Semiconductor - Diodes Division byv2850.pdf Description: DIODE AVALANCHE 150V 3.5A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 3.5A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
auf Bestellung 350 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.9 EUR
10+1.84 EUR
100+1.24 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
BYV38-TAP BYV38-TAP Vishay General Semiconductor - Diodes Division byv37.pdf Description: DIODE AVALANCHE 1000V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 7929 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.23 EUR
23+0.79 EUR
100+0.63 EUR
500+0.49 EUR
1000+0.43 EUR
2000+0.4 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
BYW34-TAP BYW34-TAP Vishay General Semiconductor - Diodes Division byw32.pdf Description: DIODE AVALANCHE 400V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 4050 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.23 EUR
23+0.79 EUR
100+0.63 EUR
500+0.49 EUR
1000+0.43 EUR
2000+0.4 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
BYW54-TAP BYW54-TAP Vishay General Semiconductor - Diodes Division byw52.pdf Description: DIODE AVALANCHE 600V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYW55-TAP BYW55-TAP Vishay General Semiconductor - Diodes Division byw52.pdf Description: DIODE AVALANCHE 800V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
auf Bestellung 6556 Stücke:
Lieferzeit 10-14 Tag (e)
16+1.13 EUR
25+0.73 EUR
100+0.66 EUR
500+0.51 EUR
1000+0.44 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
EGP10G-E3/73 EGP10G-E3/73 Vishay General Semiconductor - Diodes Division egp10a.pdf Description: DIODE STANDARD 400V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EGP20B-E3/73 EGP20B-E3/73 Vishay General Semiconductor - Diodes Division egp20a.pdf Description: DIODE GEN PURP 100V 2A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 3994 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.41 EUR
16+1.15 EUR
100+0.9 EUR
500+0.76 EUR
1000+0.62 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
BZT03C180-TAP BZT03C180-TAP Vishay General Semiconductor - Diodes Division bzt03.pdf Description: TVS DIODE 150VWM 249VC SOD57
Packaging: Cut Tape (CT)
Tolerance: ±6.39%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 400 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 130 V
auf Bestellung 3079 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.23 EUR
22+0.83 EUR
100+0.57 EUR
500+0.45 EUR
1000+0.41 EUR
2000+0.38 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
BZT03C18-TAP BZT03C18-TAP Vishay General Semiconductor - Diodes Division bzt03.pdf Description: TVS DIODE 15VWM 25.6VC SOD57
Packaging: Cut Tape (CT)
Tolerance: ±6.39%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 13 V
auf Bestellung 333 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.36 EUR
20+0.91 EUR
100+0.63 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
BZT03C12-TAP BZT03C12-TAP Vishay General Semiconductor - Diodes Division bzt03.pdf Description: DIODE ZENER 12V 1.3W SOD57
Packaging: Cut Tape (CT)
Tolerance: ±5.42%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 3 µA @ 9.1 V
auf Bestellung 2825 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.2 EUR
19+0.95 EUR
100+0.66 EUR
500+0.52 EUR
1000+0.44 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
BZT03C24-TAP BZT03C24-TAP Vishay General Semiconductor - Diodes Division bzt03.pdf Description: TVS DIODE 20VWM 33.8VC SOD57
Packaging: Cut Tape (CT)
Tolerance: ±5.83%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 18 V
auf Bestellung 1071 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.23 EUR
22+0.83 EUR
100+0.57 EUR
500+0.45 EUR
1000+0.41 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
BZT03C47-TAP BZT03C47-TAP Vishay General Semiconductor - Diodes Division bzt03.pdf Description: DIODE ZENER 47V 1.3W SOD57
Packaging: Cut Tape (CT)
Tolerance: ±6.38%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 36 V
auf Bestellung 503 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.37 EUR
20+0.92 EUR
100+0.64 EUR
500+0.53 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
BZX55B3V3-TAP BZX55B3V3-TAP Vishay General Semiconductor - Diodes Division bzx55.pdf Description: DIODE ZENER 3.3V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 13225 Stücke:
Lieferzeit 10-14 Tag (e)
91+0.19 EUR
136+0.13 EUR
396+0.045 EUR
500+0.042 EUR
1000+0.037 EUR
Mindestbestellmenge: 91
Im Einkaufswagen  Stück im Wert von  UAH
BZX55B3V9-TAP BZX55B3V9-TAP Vishay General Semiconductor - Diodes Division bzx55.pdf Description: DIODE ZENER 3.9V 500MW DO35
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3964 Stücke:
Lieferzeit 10-14 Tag (e)
50+0.35 EUR
74+0.24 EUR
151+0.12 EUR
500+0.097 EUR
1000+0.068 EUR
2000+0.059 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
BZX55B7V5-TAP BZX55B7V5-TAP Vishay General Semiconductor - Diodes Division bzx55.pdf Description: DIODE ZENER 7.5V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 5 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 21610 Stücke:
Lieferzeit 10-14 Tag (e)
100+0.18 EUR
103+0.17 EUR
484+0.036 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
BZX55B8V2-TAP BZX55B8V2-TAP Vishay General Semiconductor - Diodes Division bzx55.pdf Description: DIODE ZENER 8.2V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 6.2 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12473 Stücke:
Lieferzeit 10-14 Tag (e)
91+0.19 EUR
136+0.13 EUR
396+0.045 EUR
500+0.042 EUR
1000+0.037 EUR
Mindestbestellmenge: 91
Im Einkaufswagen  Stück im Wert von  UAH
BZX55C51-TAP BZX55C51-TAP Vishay General Semiconductor - Diodes Division bzx55.pdf Description: DIODE ZENER 51V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 39 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 28419 Stücke:
Lieferzeit 10-14 Tag (e)
84+0.21 EUR
114+0.15 EUR
262+0.067 EUR
500+0.063 EUR
1000+0.059 EUR
2000+0.057 EUR
5000+0.056 EUR
Mindestbestellmenge: 84
Im Einkaufswagen  Stück im Wert von  UAH
BZX85B13-TAP BZX85B13-TAP Vishay General Semiconductor - Diodes Division BZX85_Series.pdf Description: DIODE ZENER 13V 1.3W DO204AL
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7925 Stücke:
Lieferzeit 10-14 Tag (e)
112+0.16 EUR
205+0.086 EUR
Mindestbestellmenge: 112
Im Einkaufswagen  Stück im Wert von  UAH
GI752-E3/73 GI752-E3/73 Vishay General Semiconductor - Diodes Division gi750.pdf Description: DIODE STANDARD 200V 6A P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 136 Stücke:
Lieferzeit 10-14 Tag (e)
13+1.36 EUR
19+0.94 EUR
100+0.78 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
GI756-E3/73 GI756-E3/73 Vishay General Semiconductor - Diodes Division gi750.pdf Description: DIODE GEN PURP 600V 6A P600
auf Bestellung 390 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.22 EUR
10+1.98 EUR
100+1.54 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
BZX85C3V6-TAP BZX85C3V6-TAP Vishay General Semiconductor - Diodes Division BZX85_Series.pdf Description: DIODE ZENER 3.6V 1.3W DO204AL
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1652 Stücke:
Lieferzeit 10-14 Tag (e)
59+0.3 EUR
87+0.2 EUR
194+0.091 EUR
500+0.088 EUR
1000+0.085 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
GP10T-E3/73 GP10T-E3/73 Vishay General Semiconductor - Diodes Division gp10a.pdf Description: DIODE STANDARD 1300V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
auf Bestellung 2953 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.07 EUR
23+0.78 EUR
100+0.56 EUR
500+0.45 EUR
1000+0.35 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
GP15M-E3/73 GP15M-E3/73 Vishay General Semiconductor - Diodes Division gp15a.pdf Description: DIODE GEN PURP 1KV 1.5A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.5 µs
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 513 Stücke:
Lieferzeit 10-14 Tag (e)
19+0.93 EUR
22+0.81 EUR
100+0.56 EUR
500+0.47 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
BYG10YHE3_A/I byg10.pdf
BYG10YHE3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 1.6KV 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1600 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3093 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.7 EUR
33+0.55 EUR
100+0.45 EUR
500+0.35 EUR
1000+0.28 EUR
2000+0.25 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
BYG10YHM3_A/H byg10.pdf
BYG10YHM3_A/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 1.6KV 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1600 V
Qualification: AEC-Q101
auf Bestellung 14508 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
30+0.59 EUR
100+0.47 EUR
500+0.35 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
BYG10YHM3_A/I byg10.pdf
BYG10YHM3_A/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 1.6KV 1.5A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.15 V @ 1.5 A
Current - Reverse Leakage @ Vr: 1 µA @ 1600 V
Qualification: AEC-Q101
auf Bestellung 29727 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.88 EUR
29+0.62 EUR
100+0.47 EUR
500+0.35 EUR
1000+0.3 EUR
2000+0.28 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
1.5KE250A-E3/73 15ke.pdf
1.5KE250A-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 214VWM 344VC 1.5KE
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 4.4A
Voltage - Reverse Standoff (Typ): 214V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 237V
Voltage - Clamping (Max) @ Ipp: 344V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 240 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.45 EUR
12+1.55 EUR
100+1.03 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
1.5KE30A-E3/73 15ke.pdf
1.5KE30A-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 25.6VWM 41.4VC 1.5KE
Packaging: Cut Tape (CT)
Package / Case: DO-201AA, DO-27, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 36.2A
Voltage - Reverse Standoff (Typ): 25.6V
Supplier Device Package: 1.5KE
Unidirectional Channels: 1
Voltage - Breakdown (Min): 28.5V
Voltage - Clamping (Max) @ Ipp: 41.4V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N4002-E3/53 1n4001.pdf
1N4002-E3/53
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 2704 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
89+0.2 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.11 EUR
Mindestbestellmenge: 56
Im Einkaufswagen  Stück im Wert von  UAH
1N4003GP-E3/73 1n4001gp.pdf
1N4003GP-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 5852 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.93 EUR
29+0.63 EUR
100+0.51 EUR
500+0.39 EUR
1000+0.35 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
1N4005-E3/73 1n4001.pdf
1N4005-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 5759 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
67+0.26 EUR
96+0.18 EUR
118+0.15 EUR
500+0.11 EUR
1000+0.097 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
1N4005GP-E3/73 1n4001gp.pdf
1N4005GP-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 5274 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.92 EUR
29+0.62 EUR
100+0.51 EUR
500+0.39 EUR
1000+0.35 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
1N4007-E3/53 1n4001.pdf
1N4007-E3/53
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 914 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
48+0.37 EUR
74+0.24 EUR
100+0.2 EUR
500+0.15 EUR
Mindestbestellmenge: 48
Im Einkaufswagen  Stück im Wert von  UAH
1N4007E-E3/73 1n4001.pdf
1N4007E-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 1446 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
42+0.42 EUR
62+0.29 EUR
100+0.2 EUR
500+0.15 EUR
1000+0.13 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
1N4007GP-E3/73 1n4001gp.pdf
1N4007GP-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 4434 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.09 EUR
24+0.75 EUR
100+0.48 EUR
500+0.37 EUR
1000+0.33 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
1N4007GPE-E3/73 1n4001gp.pdf
1N4007GPE-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1000V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 8pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 3848 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.13 EUR
25+0.73 EUR
100+0.47 EUR
500+0.36 EUR
1000+0.32 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
1N4936GP-E3/73 1n4933gp.pdf
1N4936GP-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 2525 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.04 EUR
23+0.78 EUR
100+0.56 EUR
500+0.45 EUR
1000+0.35 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
1N4937-E3/73 1n4933.pdf
1N4937-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 2486 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
72+0.25 EUR
106+0.17 EUR
132+0.13 EUR
Mindestbestellmenge: 72
Im Einkaufswagen  Stück im Wert von  UAH
1N4937GP-E3/73 1n4933gp.pdf
1N4937GP-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 6708 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.09 EUR
26+0.68 EUR
100+0.44 EUR
500+0.37 EUR
1000+0.31 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
1N4947GP-E3/73 1n4942gp.pdf
1N4947GP-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 800V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
1N5227B-TAP 1n5221.pdf
1N5227B-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.6V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 24 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 15 µA @ 1 V
auf Bestellung 12257 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
91+0.19 EUR
127+0.14 EUR
290+0.061 EUR
500+0.058 EUR
1000+0.047 EUR
2000+0.046 EUR
Mindestbestellmenge: 91
Im Einkaufswagen  Stück im Wert von  UAH
1N5229B-TAP 1n5221.pdf
1N5229B-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 4.3V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C
Voltage - Zener (Nom) (Vz): 4.3 V
Impedance (Max) (Zzt): 22 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 1 V
auf Bestellung 9021 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
100+0.18 EUR
141+0.12 EUR
322+0.055 EUR
500+0.05 EUR
1000+0.041 EUR
2000+0.04 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
1N4934-E3/73 1n4933.pdf
1N4934-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Capacitance @ Vr, F: 12pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 3978 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
46+0.39 EUR
100+0.21 EUR
500+0.16 EUR
1000+0.14 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
1N5399GP-E3/73 1n5391gp.pdf
1N5399GP-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STD 1000V 1.5A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.4 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 5793 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.41 EUR
20+0.91 EUR
100+0.59 EUR
500+0.46 EUR
1000+0.41 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
1N5401-E3/73 1n5400.pdf
1N5401-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 100V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 2134 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.95 EUR
29+0.62 EUR
100+0.52 EUR
500+0.4 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
1N5402-E3/73 1n5400.pdf
1N5402-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 1768 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.04 EUR
28+0.64 EUR
100+0.38 EUR
500+0.35 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
1N5404-E3/73 1n5400.pdf
1N5404-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 315 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.16 EUR
23+0.78 EUR
100+0.51 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
1N5406-E3/73 1n5400.pdf
1N5406-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 36 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.18 EUR
23+0.77 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
1N5407-E3/73 1n5400.pdf
1N5407-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 800V 3A DO201AD
Packaging: Cut Tape (CT)
Package / Case: DO-201AD, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Capacitance @ Vr, F: 30pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-201AD
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 958 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.06 EUR
27+0.67 EUR
100+0.4 EUR
500+0.36 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
1N5817-E3/73 1n5817.pdf
1N5817-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 20V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 1 mA @ 20 V
auf Bestellung 2112 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+0.4 EUR
60+0.3 EUR
100+0.22 EUR
500+0.16 EUR
1000+0.14 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
BAW76-TAP baw76.pdf
BAW76-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 50V 300MA DO204AH
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 300mA
Supplier Device Package: DO-204AH (DO-35)
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1930 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
125+0.14 EUR
345+0.051 EUR
372+0.047 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
BY228-15TAP by22813.pdf
BY228-15TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1200V 3A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Avalanche
Current - Average Rectified (Io): 3A
Supplier Device Package: SOD-64
Operating Temperature - Junction: 140°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1200 V
auf Bestellung 3378 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.94 EUR
14+1.29 EUR
100+1.04 EUR
500+0.82 EUR
1000+0.75 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
5KP33A-E3/73 5KP5.0%20thru%205KP188A.pdf
5KP33A-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 33VWM 53.3VC P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -55°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 93.8A
Voltage - Reverse Standoff (Typ): 33V
Supplier Device Package: P600
Unidirectional Channels: 1
Voltage - Breakdown (Min): 36.7V
Voltage - Clamping (Max) @ Ipp: 53.3V
Power - Peak Pulse: 5000W (5kW)
Power Line Protection: No
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BY448GP-E3/73 by448gp.pdf
BY448GP-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GP 1.65KV 1.5A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 µs
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 3 A
Current - Reverse Leakage @ Vr: 5 µA @ 1650 V
auf Bestellung 508 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.85 EUR
15+1.23 EUR
100+0.93 EUR
500+0.75 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
BYT52M-TAP byt52.pdf
BYT52M-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1KV 1.4A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 1.4A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 7 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
BYT62-TAP byt62.pdf
BYT62-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVAL 2.4KV 350MA SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 5 µs
Technology: Avalanche
Current - Average Rectified (Io): 350mA
Supplier Device Package: SOD-57
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 2400 V
Voltage - Forward (Vf) (Max) @ If: 3.6 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 2400 V
auf Bestellung 7931 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.09 EUR
11+1.71 EUR
100+1.33 EUR
500+1.13 EUR
1000+0.92 EUR
2000+0.86 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
BYV26A-TAP byv26.pdf
BYV26A-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 200V 1A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYV26B-TAP byv26.pdf
BYV26B-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 1A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 2391 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.18 EUR
23+0.77 EUR
100+0.61 EUR
500+0.47 EUR
1000+0.41 EUR
2000+0.39 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
BYV26D-TAP byv26.pdf
BYV26D-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 1A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Avalanche
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 2.5 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
auf Bestellung 6915 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.28 EUR
22+0.82 EUR
100+0.65 EUR
500+0.5 EUR
1000+0.44 EUR
2000+0.41 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
BYV27-150-TAP byv27.pdf
BYV27-150-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 165V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 165 V
Voltage - Forward (Vf) (Max) @ If: 1.07 V @ 3 A
Current - Reverse Leakage @ Vr: 1 µA @ 165 V
auf Bestellung 2353 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
14+1.27 EUR
20+0.89 EUR
100+0.7 EUR
500+0.54 EUR
1000+0.48 EUR
2000+0.45 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
BYV28-150-TAP byv2850.pdf
BYV28-150-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 150V 3.5A SOD64
Packaging: Cut Tape (CT)
Package / Case: SOD-64, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 30 ns
Technology: Avalanche
Current - Average Rectified (Io): 3.5A
Supplier Device Package: SOD-64
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 5 A
Current - Reverse Leakage @ Vr: 1 µA @ 150 V
auf Bestellung 350 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.9 EUR
10+1.84 EUR
100+1.24 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
BYV38-TAP byv37.pdf
BYV38-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 1000V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 7929 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.23 EUR
23+0.79 EUR
100+0.63 EUR
500+0.49 EUR
1000+0.43 EUR
2000+0.4 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
BYW34-TAP byw32.pdf
BYW34-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 400V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 4050 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.23 EUR
23+0.79 EUR
100+0.63 EUR
500+0.49 EUR
1000+0.43 EUR
2000+0.4 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
BYW54-TAP byw52.pdf
BYW54-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 600V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BYW55-TAP byw52.pdf
BYW55-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE AVALANCHE 800V 2A SOD57
Packaging: Cut Tape (CT)
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 4 µs
Technology: Avalanche
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-57
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
auf Bestellung 6556 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.13 EUR
25+0.73 EUR
100+0.66 EUR
500+0.51 EUR
1000+0.44 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
EGP10G-E3/73 egp10a.pdf
EGP10G-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 400V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
EGP20B-E3/73 egp20a.pdf
EGP20B-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 100V 2A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 70pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 3994 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.41 EUR
16+1.15 EUR
100+0.9 EUR
500+0.76 EUR
1000+0.62 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
BZT03C180-TAP bzt03.pdf
BZT03C180-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 150VWM 249VC SOD57
Packaging: Cut Tape (CT)
Tolerance: ±6.39%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 180 V
Impedance (Max) (Zzt): 400 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 130 V
auf Bestellung 3079 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.23 EUR
22+0.83 EUR
100+0.57 EUR
500+0.45 EUR
1000+0.41 EUR
2000+0.38 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
BZT03C18-TAP bzt03.pdf
BZT03C18-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 15VWM 25.6VC SOD57
Packaging: Cut Tape (CT)
Tolerance: ±6.39%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 13 V
auf Bestellung 333 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.36 EUR
20+0.91 EUR
100+0.63 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
BZT03C12-TAP bzt03.pdf
BZT03C12-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 12V 1.3W SOD57
Packaging: Cut Tape (CT)
Tolerance: ±5.42%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 3 µA @ 9.1 V
auf Bestellung 2825 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.2 EUR
19+0.95 EUR
100+0.66 EUR
500+0.52 EUR
1000+0.44 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
BZT03C24-TAP bzt03.pdf
BZT03C24-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: TVS DIODE 20VWM 33.8VC SOD57
Packaging: Cut Tape (CT)
Tolerance: ±5.83%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 24 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 18 V
auf Bestellung 1071 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.23 EUR
22+0.83 EUR
100+0.57 EUR
500+0.45 EUR
1000+0.41 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
BZT03C47-TAP bzt03.pdf
BZT03C47-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 47V 1.3W SOD57
Packaging: Cut Tape (CT)
Tolerance: ±6.38%
Package / Case: SOD-57, Axial
Mounting Type: Through Hole
Operating Temperature: 175°C (TJ)
Voltage - Zener (Nom) (Vz): 47 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: SOD-57
Part Status: Active
Power - Max: 1.3 W
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 500 mA
Current - Reverse Leakage @ Vr: 1 µA @ 36 V
auf Bestellung 503 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.37 EUR
20+0.92 EUR
100+0.64 EUR
500+0.53 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
BZX55B3V3-TAP bzx55.pdf
BZX55B3V3-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.3V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.3 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 13225 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
91+0.19 EUR
136+0.13 EUR
396+0.045 EUR
500+0.042 EUR
1000+0.037 EUR
Mindestbestellmenge: 91
Im Einkaufswagen  Stück im Wert von  UAH
BZX55B3V9-TAP bzx55.pdf
BZX55B3V9-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.9V 500MW DO35
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.9 V
Impedance (Max) (Zzt): 90 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 2 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3964 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
50+0.35 EUR
74+0.24 EUR
151+0.12 EUR
500+0.097 EUR
1000+0.068 EUR
2000+0.059 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
BZX55B7V5-TAP bzx55.pdf
BZX55B7V5-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 7.5V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 7.5 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 5 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 21610 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
100+0.18 EUR
103+0.17 EUR
484+0.036 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
BZX55B8V2-TAP bzx55.pdf
BZX55B8V2-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 8.2V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 8.2 V
Impedance (Max) (Zzt): 7 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 6.2 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 12473 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
91+0.19 EUR
136+0.13 EUR
396+0.045 EUR
500+0.042 EUR
1000+0.037 EUR
Mindestbestellmenge: 91
Im Einkaufswagen  Stück im Wert von  UAH
BZX55C51-TAP bzx55.pdf
BZX55C51-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 51V 500MW DO204AH
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 175°C
Voltage - Zener (Nom) (Vz): 51 V
Impedance (Max) (Zzt): 125 Ohms
Supplier Device Package: DO-204AH (DO-35)
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 39 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 28419 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
84+0.21 EUR
114+0.15 EUR
262+0.067 EUR
500+0.063 EUR
1000+0.059 EUR
2000+0.057 EUR
5000+0.056 EUR
Mindestbestellmenge: 84
Im Einkaufswagen  Stück im Wert von  UAH
BZX85B13-TAP BZX85_Series.pdf
BZX85B13-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 13V 1.3W DO204AL
Packaging: Cut Tape (CT)
Tolerance: ±2%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 10 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 500 nA @ 10 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 7925 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
112+0.16 EUR
205+0.086 EUR
Mindestbestellmenge: 112
Im Einkaufswagen  Stück im Wert von  UAH
GI752-E3/73 gi750.pdf
GI752-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 200V 6A P600
Packaging: Cut Tape (CT)
Package / Case: P600, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2.5 µs
Technology: Standard
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Current - Average Rectified (Io): 6A
Supplier Device Package: P600
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 6 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 136 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.36 EUR
19+0.94 EUR
100+0.78 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
GI756-E3/73 gi750.pdf
GI756-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 6A P600
auf Bestellung 390 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.22 EUR
10+1.98 EUR
100+1.54 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
BZX85C3V6-TAP BZX85_Series.pdf
BZX85C3V6-TAP
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 3.6V 1.3W DO204AL
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C
Voltage - Zener (Nom) (Vz): 3.6 V
Impedance (Max) (Zzt): 20 Ohms
Supplier Device Package: DO-204AL (DO-41)
Part Status: Active
Power - Max: 1.3 W
Current - Reverse Leakage @ Vr: 20 µA @ 1 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1652 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.3 EUR
87+0.2 EUR
194+0.091 EUR
500+0.088 EUR
1000+0.085 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
GP10T-E3/73 gp10a.pdf
GP10T-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1300V 1A DO204AL
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-204AL (DO-41)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1300 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1300 V
auf Bestellung 2953 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.07 EUR
23+0.78 EUR
100+0.56 EUR
500+0.45 EUR
1000+0.35 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
GP15M-E3/73 gp15a.pdf
GP15M-E3/73
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1KV 1.5A DO204AC
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.5 µs
Technology: Standard
Current - Average Rectified (Io): 1.5A
Supplier Device Package: DO-204AC (DO-15)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1.5 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 513 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.93 EUR
22+0.81 EUR
100+0.56 EUR
500+0.47 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 68 136 204 272 340 395 396 397 398 399 400 401 402 403 404 405 408 476 544 612 680  [ Nächste Seite >> ]