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VS-MURB1620CT-1-M3 VS-MURB1620CT-1-M3 Vishay General Semiconductor - Diodes Division vs-murb1620ct-m3.pdf Description: DIODE ARRAY GP 200V 8A TO262AA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-262AA
Current - Average Rectified (Io) (per Diode): 8A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Produkt ist nicht verfügbar
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VS-MURB1620CT-M3 VS-MURB1620CT-M3 Vishay General Semiconductor - Diodes Division vs-murb1620ct-m3.pdf Description: DIODE ARRAY GP 200V 8A TO263AB
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 8A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
auf Bestellung 9053 Stücke:
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9+2.02 EUR
50+0.78 EUR
100+0.75 EUR
500+0.7 EUR
1000+0.69 EUR
2000+0.66 EUR
5000+0.64 EUR
Mindestbestellmenge: 9
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VS-MURB820-1-M3 VS-MURB820-1-M3 Vishay General Semiconductor - Diodes Division vs-murb820-m3.pdf Description: DIODE GEN PURP 200V 8A TO262AA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-262AA
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Produkt ist nicht verfügbar
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VS-6DKH02-M3/H VS-6DKH02-M3/H Vishay General Semiconductor - Diodes Division vs-6dkh02-m3.pdf Description: DIODE ARRAY GP 200V 3A FLATPAK
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: FlatPAK 5x6 (Dual)
Current - Average Rectified (Io) (per Diode): 3A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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VS-8DKH02-M3/H VS-8DKH02-M3/H Vishay General Semiconductor - Diodes Division vs-8dkh02-m3.pdf Description: DIODE ARRAY GP 200V 4A FLATPAK
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: FlatPAK 5x6 (Dual)
Current - Average Rectified (Io) (per Diode): 4A
Diode Configuration: 2 Independent
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Technology: Standard
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VS-6DKH02-M3/H VS-6DKH02-M3/H Vishay General Semiconductor - Diodes Division vs-6dkh02-m3.pdf Description: DIODE ARRAY GP 200V 3A FLATPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
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VS-8DKH02-M3/H VS-8DKH02-M3/H Vishay General Semiconductor - Diodes Division vs-8dkh02-m3.pdf Description: DIODE ARRAY GP 200V 4A FLATPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
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G2SBA60L-5700E3/45 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECTIFIER
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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G2SBA60L-5701E3/45 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECTIFIER
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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G2SBA60L-5701E3/51 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECTIFIER
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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G2SBA60L-5702E3/45 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECTIFIER
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar
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G2SBA60L-5703E3/45 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECTIFIER
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar
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G2SBA60L-5704E3/51 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECTIFIER
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar
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G2SBA60L-5705E3/45 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECTIFIER
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar
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G2SBA60L-6826E3/51 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECTIFIER
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar
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G2SBA60L-6847E3/45 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECTIFIER
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar
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G2SBA60L-6847E3/51 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECTIFIER
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar
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UHF20FCTL-801E3/72 Vishay General Semiconductor - Diodes Division Description: DIODE RECTIFIER
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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G2SB80-M3/51 Vishay General Semiconductor - Diodes Division Description: BRIDGE RECT 1PHASE 800V 1.5A GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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VS-GT180DA120U VS-GT180DA120U Vishay General Semiconductor - Diodes Division vs-gt180da120u.pdf Description: IGBT MODULE 1200V 281A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 281 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1087 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 9.35 nF @ 25 V
auf Bestellung 313 Stücke:
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BZG05C10-M3-08 BZG05C10-M3-08 Vishay General Semiconductor - Diodes Division bzg05c-m-series.pdf Description: DIODE ZENER 10V 1.25W DO214AC
Current - Reverse Leakage @ Vr: 500 nA @ 7 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 10 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6%
Packaging: Cut Tape (CT)
auf Bestellung 6598 Stücke:
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BZG05C15-M3-08 BZG05C15-M3-08 Vishay General Semiconductor - Diodes Division bzg05c-m-series.pdf Description: DIODE ZENER 15V 1.25W DO214AC
Current - Reverse Leakage @ Vr: 500 nA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6%
Packaging: Cut Tape (CT)
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BZG05C39-HM3-08 BZG05C39-HM3-08 Vishay General Semiconductor - Diodes Division bzg05c-m-series.pdf Description: DIODE ZENER 39V 1.25W DO214AC
Produkt ist nicht verfügbar
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BZG05C6V2-M3-08 BZG05C6V2-M3-08 Vishay General Semiconductor - Diodes Division bzg05c-m-series.pdf Description: DIODE ZENER 6.2V 1.25W DO214AC
Power - Max: 1.25 W
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 4 Ohms
Voltage - Zener (Nom) (Vz): 6.2 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6.45%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
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BZG05C91-M3-08 BZG05C91-M3-08 Vishay General Semiconductor - Diodes Division bzg05c-m-series.pdf Description: DIODE ZENER 91V 1.25W DO214AC
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6.04%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 500 nA @ 68 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 250 Ohms
Voltage - Zener (Nom) (Vz): 91 V
Operating Temperature: 150°C (TJ)
auf Bestellung 6453 Stücke:
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500+0.24 EUR
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V10DM100C-M3/I V10DM100C-M3/I Vishay General Semiconductor - Diodes Division v10dm100c.pdf Description: DIODE ARR SCHOTT 100V 5A TO263AC
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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V10DM100CHM3/I V10DM100CHM3/I Vishay General Semiconductor - Diodes Division v10dm100c.pdf Description: DIODE ARR SCHOTT 100V 5A TO263AC
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 3342 Stücke:
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7+2.82 EUR
10+1.78 EUR
100+1.19 EUR
500+0.94 EUR
1000+0.86 EUR
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V20DM100C-M3/I V20DM100C-M3/I Vishay General Semiconductor - Diodes Division v20dm100c.pdf Description: DIODE ARR SCHOT 100V 10A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
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V20DM100CHM3/I V20DM100CHM3/I Vishay General Semiconductor - Diodes Division v20dm100c.pdf Description: DIODE ARR SCHOT 100V 10A TO263AC
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Qualification: AEC-Q101
Grade: Automotive
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V2F6HM3/H V2F6HM3/H Vishay General Semiconductor - Diodes Division v2f6.pdf Description: DIODE SCHOTTKY 60V 2A DO219AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 480 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 250pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
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500+0.23 EUR
1000+0.22 EUR
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V2FM12HM3/H V2FM12HM3/H Vishay General Semiconductor - Diodes Division v2fm12.pdf Description: 2A,120V,SMF,TRENCH SKY RECT.
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V30DM100C-M3/I V30DM100C-M3/I Vishay General Semiconductor - Diodes Division v30dm100c.pdf Description: DIODE ARR SCHOT 100V 15A TO263AC
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 400 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
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V30DM100CHM3/I V30DM100CHM3/I Vishay General Semiconductor - Diodes Division v30dm100c.pdf Description: DIODE ARR SCHOT 100V 15A TO263AC
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 400 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Qualification: AEC-Q101
Grade: Automotive
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V30DM150C-M3/I V30DM150C-M3/I Vishay General Semiconductor - Diodes Division v30dm150c.pdf Description: DIODE ARRAY SCHOTT 150V TO263AC
Current - Reverse Leakage @ Vr: 200 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Packaging: Cut Tape (CT)
auf Bestellung 1978 Stücke:
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10+2.42 EUR
100+1.89 EUR
500+1.56 EUR
1000+1.28 EUR
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V3F6-M3/H V3F6-M3/H Vishay General Semiconductor - Diodes Division v3f6.pdf Description: DIODE SCHOTTKY 60V 3A DO219AB
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 310pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
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V3FM12-M3/H V3FM12-M3/H Vishay General Semiconductor - Diodes Division v3fm12.pdf Description: DIODE SCHOTTKY 120V 3A DO219AB
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 220pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 120 V
Operating Temperature - Junction: -40°C ~ 175°C
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V3FM15-M3/H V3FM15-M3/H Vishay General Semiconductor - Diodes Division v3fm15.pdf Description: DIODE SCHOTTKY 150V 3A DO219AB
Current - Reverse Leakage @ Vr: 85 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.24 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
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V40DM100C-M3/I V40DM100C-M3/I Vishay General Semiconductor - Diodes Division v40dm100c.pdf Description: DIODE ARR SCHOT 100V 20A TO263AC
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 700 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
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V40DM100CHM3/I V40DM100CHM3/I Vishay General Semiconductor - Diodes Division v40dm100c.pdf Description: DIODE ARR SCHOT 100V 20A TO263AC
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 700 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 20A
Qualification: AEC-Q101
Grade: Automotive
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V60DM100C-M3/I V60DM100C-M3/I Vishay General Semiconductor - Diodes Division v60dm100c.pdf Description: DIODE ARR SCHOT 100V 30A TO263AC
Current - Reverse Leakage @ Vr: 800 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Cut Tape (CT)
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V60DM100CHM3/I V60DM100CHM3/I Vishay General Semiconductor - Diodes Division v60dm100c.pdf Description: DIODE ARR SCHOT 100V 30A TO263AC
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 800 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Cut Tape (CT)
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VS-10ETF06SLHM3 VS-10ETF06SLHM3 Vishay General Semiconductor - Diodes Division vs-10etf06slhm3.pdf Description: DIODE STANDARD 600V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-10ETF12SLHM3 VS-10ETF12SLHM3 Vishay General Semiconductor - Diodes Division vs-10etf12slhm3.pdf Description: DIODE GEN PURP 1.2KV 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 310 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Qualification: AEC-Q101
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VS-10ETS12SLHM3 VS-10ETS12SLHM3 Vishay General Semiconductor - Diodes Division vs-10ets12slhm3.pdf Description: DIODE GEN PURP 1.2KV 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Qualification: AEC-Q101
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VS-20ETF06SLHM3 VS-20ETF06SLHM3 Vishay General Semiconductor - Diodes Division vs-20etf06slhm3.pdf Description: DIODE GEN PURP 600V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.67 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Qualification: AEC-Q101
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800+2.29 EUR
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VS-20ETF12SLHM3 VS-20ETF12SLHM3 Vishay General Semiconductor - Diodes Division vs-20etf12slhm3.pdf Description: DIODE GEN PURP 1.2KV 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Qualification: AEC-Q101
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VS-25ETS12SLHM3 VS-25ETS12SLHM3 Vishay General Semiconductor - Diodes Division Description: DIODE GEN PURP 1.2KV 25A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 25 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-25TTS12SLHM3 VS-25TTS12SLHM3 Vishay General Semiconductor - Diodes Division vs-25tts12slhm3.pdf Description: SCR 1.2KV 25A TO-263AB (D2PAK)
Voltage - Off State: 1.2 kV
Current - On State (It (RMS)) (Max): 25 A
Part Status: Active
Supplier Device Package: TO-263AB (D2PAK)
Current - Off State (Max): 10 mA
Voltage - On State (Vtm) (Max): 1.25 V
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 16 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 350A @ 50Hz
Current - Gate Trigger (Igt) (Max): 45 mA
Current - Hold (Ih) (Max): 150 mA
Operating Temperature: -40°C ~ 125°C (TJ)
SCR Type: Standard Recovery
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 6400 Stücke:
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800+2 EUR
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VS-25TTS16SLHM3 VS-25TTS16SLHM3 Vishay General Semiconductor - Diodes Division vs-25tts16slhm3.pdf Description: SCR 1.6KV 25A TO-263AB (D2PAK)
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 25 A
Part Status: Active
Supplier Device Package: TO-263AB (D2PAK)
Current - Off State (Max): 10 mA
Voltage - On State (Vtm) (Max): 1.25 V
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 16 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 350A @ 50Hz
Current - Gate Trigger (Igt) (Max): 45 mA
Current - Hold (Ih) (Max): 150 mA
Operating Temperature: -40°C ~ 125°C (TJ)
SCR Type: Standard Recovery
Mounting Type: Surface Mount
Qualification: AEC-Q101
Grade: Automotive
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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800+2.15 EUR
1600+2.02 EUR
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VS-30TPS12LHM3 VS-30TPS12LHM3 Vishay General Semiconductor - Diodes Division vs-30tps12lhm3.pdf Description: SCR 1.2KV 30A TO247AD
Voltage - Off State: 1.2 kV
Current - On State (It (RMS)) (Max): 30 A
Part Status: Active
Supplier Device Package: TO-247AD
Current - Off State (Max): 10 mA
Voltage - On State (Vtm) (Max): 1.3 V
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 20 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 300A @ 50Hz
Current - Gate Trigger (Igt) (Max): 45 mA
Current - Hold (Ih) (Max): 150 mA
Operating Temperature: -40°C ~ 125°C (TJ)
SCR Type: Standard Recovery
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
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VS-30TPS16LHM3 VS-30TPS16LHM3 Vishay General Semiconductor - Diodes Division vs-30tps16lhm3.pdf Description: SCR 1.6KV 30A TO-247AD
Qualification: AEC-Q101
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 30 A
Grade: Automotive
Supplier Device Package: TO-247AD
Current - Off State (Max): 10 mA
Voltage - On State (Vtm) (Max): 1.3 V
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 20 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 300A @ 50Hz
Current - Gate Trigger (Igt) (Max): 45 mA
Current - Hold (Ih) (Max): 150 mA
Operating Temperature: -40°C ~ 125°C (TJ)
SCR Type: Standard Recovery
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
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VS-40TPS12ALHM3 VS-40TPS12ALHM3 Vishay General Semiconductor - Diodes Division vs-40tps12lhm3.pdf Description: SCR 1.2KV 55A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 600A @ 50Hz
Current - On State (It (AV)) (Max): 35 A
Voltage - Gate Trigger (Vgt) (Max): 1.7 V
Voltage - On State (Vtm) (Max): 1.85 V
Current - Off State (Max): 500 µA
Supplier Device Package: TO-247AD
Part Status: Active
Current - On State (It (RMS)) (Max): 55 A
Voltage - Off State: 1.2 kV
Grade: Automotive
Qualification: AEC-Q101
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VS-40TPS12LHM3 VS-40TPS12LHM3 Vishay General Semiconductor - Diodes Division vs-40tps12lhm3.pdf Description: SCR 1.2KV 55A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 600A @ 50Hz
Current - On State (It (AV)) (Max): 35 A
Voltage - Gate Trigger (Vgt) (Max): 1.7 V
Voltage - On State (Vtm) (Max): 1.85 V
Current - Off State (Max): 500 µA
Supplier Device Package: TO-247AD
Part Status: Active
Current - On State (It (RMS)) (Max): 55 A
Voltage - Off State: 1.2 kV
Grade: Automotive
Qualification: AEC-Q101
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VS-40TPS16LHM3 VS-40TPS16LHM3 Vishay General Semiconductor - Diodes Division vs-40tps16lhm3.pdf Description: SCR 1.6KV 55A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 500A @ 50Hz
Current - On State (It (AV)) (Max): 35 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Voltage - On State (Vtm) (Max): 1.92 V
Current - Off State (Max): 500 µA
Supplier Device Package: TO-247AD
Grade: Automotive
Part Status: Active
Current - On State (It (RMS)) (Max): 55 A
Voltage - Off State: 1.6 kV
Qualification: AEC-Q101
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VS-8EWF06SLHM3 VS-8EWF06SLHM3 Vishay General Semiconductor - Diodes Division vs-8ewf06slhm3.pdf Description: DIODE STANDARD 600V 8A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-8EWS12SLHM3 VS-8EWS12SLHM3 Vishay General Semiconductor - Diodes Division vs-8ews12shm3.pdf Description: DIODE STANDARD 1200V 8A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Qualification: AEC-Q101
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3000+0.9 EUR
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VS-8EWS16SLHM3 VS-8EWS16SLHM3 Vishay General Semiconductor - Diodes Division vs-8ews16slhm3.pdf Description: DIODE STANDARD 1600V 8A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 1600 V
Qualification: AEC-Q101
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3000+1.35 EUR
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VS-RA160FA120 VS-RA160FA120 Vishay General Semiconductor - Diodes Division vs-ra160fa120.pdf Description: DIODE MODULE GP 1200V 91A SOT227
Current - Reverse Leakage @ Vr: 150 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 91A
Diode Configuration: 2 Independent
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
auf Bestellung 143 Stücke:
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1+37.1 EUR
10+26.89 EUR
100+22.14 EUR
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VS-RA220FA120 VS-RA220FA120 Vishay General Semiconductor - Diodes Division vs-ra220fa120.pdf Description: DIODE MOD GP 1200V 108A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 108A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 110 A
Current - Reverse Leakage @ Vr: 150 µA @ 1200 V
auf Bestellung 347 Stücke:
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1+42.59 EUR
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100+24.88 EUR
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VS-UFH280FA30 VS-UFH280FA30 Vishay General Semiconductor - Diodes Division vs-ufh280fa30.pdf Description: DIODE MODULE GP 300V 160A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 58 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 160A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 100 A
Current - Reverse Leakage @ Vr: 100 µA @ 300 V
auf Bestellung 348 Stücke:
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1+35.16 EUR
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100+20.8 EUR
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VS-MURB1620CT-1-M3 vs-murb1620ct-m3.pdf
VS-MURB1620CT-1-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 8A TO262AA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-262AA
Current - Average Rectified (Io) (per Diode): 8A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Produkt ist nicht verfügbar
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VS-MURB1620CT-M3 vs-murb1620ct-m3.pdf
VS-MURB1620CT-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 8A TO263AB
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-263AB (D2PAK)
Current - Average Rectified (Io) (per Diode): 8A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
auf Bestellung 9053 Stücke:
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Anzahl Preis
9+2.02 EUR
50+0.78 EUR
100+0.75 EUR
500+0.7 EUR
1000+0.69 EUR
2000+0.66 EUR
5000+0.64 EUR
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VS-MURB820-1-M3 vs-murb820-m3.pdf
VS-MURB820-1-M3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 200V 8A TO262AA
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 975 mV @ 8 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-262AA
Current - Average Rectified (Io): 8A
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Packaging: Tube
Produkt ist nicht verfügbar
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VS-6DKH02-M3/H vs-6dkh02-m3.pdf
VS-6DKH02-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 3A FLATPAK
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: FlatPAK 5x6 (Dual)
Current - Average Rectified (Io) (per Diode): 3A
Diode Configuration: 2 Independent
Technology: Standard
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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VS-8DKH02-M3/H vs-8dkh02-m3.pdf
VS-8DKH02-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 4A FLATPAK
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 4 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -55°C ~ 175°C
Supplier Device Package: FlatPAK 5x6 (Dual)
Current - Average Rectified (Io) (per Diode): 4A
Diode Configuration: 2 Independent
Reverse Recovery Time (trr): 25 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Technology: Standard
Produkt ist nicht verfügbar
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VS-6DKH02-M3/H vs-6dkh02-m3.pdf
VS-6DKH02-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 3A FLATPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 3A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 3 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
auf Bestellung 446 Stücke:
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17+1.04 EUR
20+0.91 EUR
100+0.63 EUR
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VS-8DKH02-M3/H vs-8dkh02-m3.pdf
VS-8DKH02-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY GP 200V 4A FLATPAK
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 25 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 4A
Supplier Device Package: FlatPAK 5x6 (Dual)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 960 mV @ 4 A
Current - Reverse Leakage @ Vr: 2 µA @ 200 V
auf Bestellung 1364 Stücke:
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10+1.94 EUR
15+1.22 EUR
100+0.81 EUR
500+0.63 EUR
Mindestbestellmenge: 10
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G2SBA60L-5700E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECTIFIER
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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G2SBA60L-5701E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECTIFIER
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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G2SBA60L-5701E3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECTIFIER
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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G2SBA60L-5702E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECTIFIER
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar
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G2SBA60L-5703E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECTIFIER
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar
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G2SBA60L-5704E3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECTIFIER
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar
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G2SBA60L-5705E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECTIFIER
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar
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G2SBA60L-6826E3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECTIFIER
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar
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G2SBA60L-6847E3/45
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECTIFIER
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar
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G2SBA60L-6847E3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECTIFIER
Part Status: Obsolete
Packaging: Bulk
Produkt ist nicht verfügbar
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UHF20FCTL-801E3/72
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE RECTIFIER
Packaging: Bulk
Part Status: Obsolete
Produkt ist nicht verfügbar
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G2SB80-M3/51
Hersteller: Vishay General Semiconductor - Diodes Division
Description: BRIDGE RECT 1PHASE 800V 1.5A GBL
Packaging: Bulk
Package / Case: 4-SIP, GBL
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: GBL
Part Status: Obsolete
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 1.5 A
Voltage - Forward (Vf) (Max) @ If: 1 V @ 750 mA
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Produkt ist nicht verfügbar
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VS-GT180DA120U vs-gt180da120u.pdf
VS-GT180DA120U
Hersteller: Vishay General Semiconductor - Diodes Division
Description: IGBT MODULE 1200V 281A SOT-227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Input: Standard
Configuration: Single
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 100A
NTC Thermistor: No
Supplier Device Package: SOT-227
IGBT Type: Trench Field Stop
Part Status: Active
Current - Collector (Ic) (Max): 281 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 1087 W
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 9.35 nF @ 25 V
auf Bestellung 313 Stücke:
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Anzahl Preis
1+75.1 EUR
10+56.63 EUR
100+50.48 EUR
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BZG05C10-M3-08 bzg05c-m-series.pdf
BZG05C10-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 10V 1.25W DO214AC
Current - Reverse Leakage @ Vr: 500 nA @ 7 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 7 Ohms
Voltage - Zener (Nom) (Vz): 10 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6%
Packaging: Cut Tape (CT)
auf Bestellung 6598 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
42+0.43 EUR
100+0.22 EUR
500+0.2 EUR
Mindestbestellmenge: 28
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BZG05C15-M3-08 bzg05c-m-series.pdf
BZG05C15-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 15V 1.25W DO214AC
Current - Reverse Leakage @ Vr: 500 nA @ 11 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 15 Ohms
Voltage - Zener (Nom) (Vz): 15 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6%
Packaging: Cut Tape (CT)
auf Bestellung 3004 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
40+0.44 EUR
100+0.3 EUR
500+0.23 EUR
Mindestbestellmenge: 28
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BZG05C39-HM3-08 bzg05c-m-series.pdf
BZG05C39-HM3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 39V 1.25W DO214AC
Produkt ist nicht verfügbar
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BZG05C6V2-M3-08 bzg05c-m-series.pdf
BZG05C6V2-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 6.2V 1.25W DO214AC
Power - Max: 1.25 W
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 4 Ohms
Voltage - Zener (Nom) (Vz): 6.2 V
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6.45%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 1 µA @ 3 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
auf Bestellung 11522 Stücke:
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Anzahl Preis
28+0.63 EUR
40+0.45 EUR
100+0.27 EUR
500+0.22 EUR
Mindestbestellmenge: 28
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BZG05C91-M3-08 bzg05c-m-series.pdf
BZG05C91-M3-08
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ZENER 91V 1.25W DO214AC
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Tolerance: ±6.04%
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 500 nA @ 68 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Power - Max: 1.25 W
Part Status: Active
Supplier Device Package: DO-214AC (SMA)
Impedance (Max) (Zzt): 250 Ohms
Voltage - Zener (Nom) (Vz): 91 V
Operating Temperature: 150°C (TJ)
auf Bestellung 6453 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
40+0.44 EUR
100+0.3 EUR
500+0.24 EUR
Mindestbestellmenge: 28
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V10DM100C-M3/I v10dm100c.pdf
V10DM100C-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 100V 5A TO263AC
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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V10DM100CHM3/I v10dm100c.pdf
V10DM100CHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOTT 100V 5A TO263AC
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 5A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 790 mV @ 5 A
Voltage - DC Reverse (Vr) (Max): 100 V
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 3342 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.82 EUR
10+1.78 EUR
100+1.19 EUR
500+0.94 EUR
1000+0.86 EUR
Mindestbestellmenge: 7
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V20DM100C-M3/I v20dm100c.pdf
V20DM100C-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 10A TO263AC
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-263AC (SMPD)
Operating Temperature - Junction: -40°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Produkt ist nicht verfügbar
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V20DM100CHM3/I v20dm100c.pdf
V20DM100CHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 10A TO263AC
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 820 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 1555 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.82 EUR
10+1.97 EUR
100+1.43 EUR
500+1.13 EUR
1000+1.04 EUR
Mindestbestellmenge: 7
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V2F6HM3/H v2f6.pdf
V2F6HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 2A DO219AB
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 480 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 2A
Capacitance @ Vr, F: 250pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
auf Bestellung 10402 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+0.6 EUR
45+0.4 EUR
100+0.25 EUR
500+0.23 EUR
1000+0.22 EUR
Mindestbestellmenge: 30
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V2FM12HM3/H v2fm12.pdf
V2FM12HM3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: 2A,120V,SMF,TRENCH SKY RECT.
auf Bestellung 8925 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
32+0.55 EUR
100+0.34 EUR
500+0.23 EUR
1000+0.18 EUR
Mindestbestellmenge: 24
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V30DM100C-M3/I v30dm100c.pdf
V30DM100C-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 15A TO263AC
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 400 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
auf Bestellung 730 Stücke:
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Anzahl Preis
6+3.24 EUR
10+1.94 EUR
100+1.54 EUR
500+1.23 EUR
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V30DM100CHM3/I v30dm100c.pdf
V30DM100CHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 15A TO263AC
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 400 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 810 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 2000 Stücke:
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Anzahl Preis
7+2.64 EUR
10+2.17 EUR
100+1.19 EUR
500+1.16 EUR
1000+1.15 EUR
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V30DM150C-M3/I v30dm150c.pdf
V30DM150C-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARRAY SCHOTT 150V TO263AC
Current - Reverse Leakage @ Vr: 200 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 15 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 15A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab) Variant
Packaging: Cut Tape (CT)
auf Bestellung 1978 Stücke:
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Anzahl Preis
7+2.71 EUR
10+2.42 EUR
100+1.89 EUR
500+1.56 EUR
1000+1.28 EUR
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V3F6-M3/H v3f6.pdf
V3F6-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 60V 3A DO219AB
Current - Reverse Leakage @ Vr: 600 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -40°C ~ 150°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 310pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
auf Bestellung 10732 Stücke:
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Anzahl Preis
40+0.44 EUR
60+0.3 EUR
100+0.21 EUR
500+0.16 EUR
1000+0.14 EUR
Mindestbestellmenge: 40
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V3FM12-M3/H v3fm12.pdf
V3FM12-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 120V 3A DO219AB
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 220pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 100 µA @ 120 V
Voltage - Forward (Vf) (Max) @ If: 940 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 120 V
Operating Temperature - Junction: -40°C ~ 175°C
auf Bestellung 9895 Stücke:
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Anzahl Preis
40+0.44 EUR
60+0.3 EUR
100+0.21 EUR
500+0.16 EUR
1000+0.14 EUR
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V3FM15-M3/H v3fm15.pdf
V3FM15-M3/H
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE SCHOTTKY 150V 3A DO219AB
Current - Reverse Leakage @ Vr: 85 µA @ 150 V
Voltage - Forward (Vf) (Max) @ If: 1.24 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: DO-219AB (SMF)
Current - Average Rectified (Io): 3A
Capacitance @ Vr, F: 150pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-219AB
Packaging: Cut Tape (CT)
auf Bestellung 41941 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
59+0.3 EUR
108+0.16 EUR
122+0.14 EUR
Mindestbestellmenge: 59
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V40DM100C-M3/I v40dm100c.pdf
V40DM100C-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 20A TO263AC
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 700 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 20A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
auf Bestellung 1224 Stücke:
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Anzahl Preis
5+3.63 EUR
10+2.46 EUR
100+1.95 EUR
500+1.57 EUR
1000+1.44 EUR
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V40DM100CHM3/I v40dm100c.pdf
V40DM100CHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 20A TO263AC
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 700 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 770 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 20A
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 736 Stücke:
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Anzahl Preis
4+4.72 EUR
10+3.06 EUR
100+2.1 EUR
500+1.7 EUR
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V60DM100C-M3/I v60dm100c.pdf
V60DM100C-M3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 30A TO263AC
Current - Reverse Leakage @ Vr: 800 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Cut Tape (CT)
auf Bestellung 99 Stücke:
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Anzahl Preis
5+3.96 EUR
10+2.68 EUR
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V60DM100CHM3/I v60dm100c.pdf
V60DM100CHM3/I
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE ARR SCHOT 100V 30A TO263AC
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 800 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 860 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 100 V
Part Status: Active
Operating Temperature - Junction: -40°C ~ 175°C
Supplier Device Package: TO-263AC (SMPD)
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), Variant
Packaging: Cut Tape (CT)
auf Bestellung 5135 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.45 EUR
10+2.31 EUR
100+2.21 EUR
500+1.86 EUR
1000+1.72 EUR
Mindestbestellmenge: 6
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VS-10ETF06SLHM3 vs-10etf06slhm3.pdf
VS-10ETF06SLHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 200 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-10ETF12SLHM3 vs-10etf12slhm3.pdf
VS-10ETF12SLHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 310 ns
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.33 V @ 10 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+1.45 EUR
Mindestbestellmenge: 800
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VS-10ETS12SLHM3 vs-10ets12slhm3.pdf
VS-10ETS12SLHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 10A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 10 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Qualification: AEC-Q101
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+1.31 EUR
Mindestbestellmenge: 800
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VS-20ETF06SLHM3 vs-20etf06slhm3.pdf
VS-20ETF06SLHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 600V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 160 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.67 V @ 60 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 4800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+2.29 EUR
1600+2.26 EUR
Mindestbestellmenge: 800
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VS-20ETF12SLHM3 vs-20etf12slhm3.pdf
VS-20ETF12SLHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 400 ns
Technology: Standard
Current - Average Rectified (Io): 20A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 20 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Qualification: AEC-Q101
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+2.26 EUR
Mindestbestellmenge: 800
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VS-25ETS12SLHM3
VS-25ETS12SLHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE GEN PURP 1.2KV 25A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 25A
Supplier Device Package: TO-263AB (D2PAK)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.14 V @ 25 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-25TTS12SLHM3 vs-25tts12slhm3.pdf
VS-25TTS12SLHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SCR 1.2KV 25A TO-263AB (D2PAK)
Voltage - Off State: 1.2 kV
Current - On State (It (RMS)) (Max): 25 A
Part Status: Active
Supplier Device Package: TO-263AB (D2PAK)
Current - Off State (Max): 10 mA
Voltage - On State (Vtm) (Max): 1.25 V
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 16 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 350A @ 50Hz
Current - Gate Trigger (Igt) (Max): 45 mA
Current - Hold (Ih) (Max): 150 mA
Operating Temperature: -40°C ~ 125°C (TJ)
SCR Type: Standard Recovery
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 6400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+2 EUR
Mindestbestellmenge: 800
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VS-25TTS16SLHM3 vs-25tts16slhm3.pdf
VS-25TTS16SLHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SCR 1.6KV 25A TO-263AB (D2PAK)
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 25 A
Part Status: Active
Supplier Device Package: TO-263AB (D2PAK)
Current - Off State (Max): 10 mA
Voltage - On State (Vtm) (Max): 1.25 V
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 16 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 350A @ 50Hz
Current - Gate Trigger (Igt) (Max): 45 mA
Current - Hold (Ih) (Max): 150 mA
Operating Temperature: -40°C ~ 125°C (TJ)
SCR Type: Standard Recovery
Mounting Type: Surface Mount
Qualification: AEC-Q101
Grade: Automotive
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+2.15 EUR
1600+2.02 EUR
Mindestbestellmenge: 800
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VS-30TPS12LHM3 vs-30tps12lhm3.pdf
VS-30TPS12LHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SCR 1.2KV 30A TO247AD
Voltage - Off State: 1.2 kV
Current - On State (It (RMS)) (Max): 30 A
Part Status: Active
Supplier Device Package: TO-247AD
Current - Off State (Max): 10 mA
Voltage - On State (Vtm) (Max): 1.3 V
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 20 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 300A @ 50Hz
Current - Gate Trigger (Igt) (Max): 45 mA
Current - Hold (Ih) (Max): 150 mA
Operating Temperature: -40°C ~ 125°C (TJ)
SCR Type: Standard Recovery
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 364 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.52 EUR
25+4.29 EUR
100+3.52 EUR
Mindestbestellmenge: 3
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VS-30TPS16LHM3 vs-30tps16lhm3.pdf
VS-30TPS16LHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SCR 1.6KV 30A TO-247AD
Qualification: AEC-Q101
Voltage - Off State: 1.6 kV
Current - On State (It (RMS)) (Max): 30 A
Grade: Automotive
Supplier Device Package: TO-247AD
Current - Off State (Max): 10 mA
Voltage - On State (Vtm) (Max): 1.3 V
Voltage - Gate Trigger (Vgt) (Max): 2 V
Current - On State (It (AV)) (Max): 20 A
Current - Non Rep. Surge 50, 60Hz (Itsm): 300A @ 50Hz
Current - Gate Trigger (Igt) (Max): 45 mA
Current - Hold (Ih) (Max): 150 mA
Operating Temperature: -40°C ~ 125°C (TJ)
SCR Type: Standard Recovery
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
auf Bestellung 452 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.15 EUR
50+3.69 EUR
100+3.36 EUR
Mindestbestellmenge: 3
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VS-40TPS12ALHM3 vs-40tps12lhm3.pdf
VS-40TPS12ALHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SCR 1.2KV 55A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 600A @ 50Hz
Current - On State (It (AV)) (Max): 35 A
Voltage - Gate Trigger (Vgt) (Max): 1.7 V
Voltage - On State (Vtm) (Max): 1.85 V
Current - Off State (Max): 500 µA
Supplier Device Package: TO-247AD
Part Status: Active
Current - On State (It (RMS)) (Max): 55 A
Voltage - Off State: 1.2 kV
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 143 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.84 EUR
25+7.02 EUR
100+5.87 EUR
Mindestbestellmenge: 2
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VS-40TPS12LHM3 vs-40tps12lhm3.pdf
VS-40TPS12LHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SCR 1.2KV 55A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 600A @ 50Hz
Current - On State (It (AV)) (Max): 35 A
Voltage - Gate Trigger (Vgt) (Max): 1.7 V
Voltage - On State (Vtm) (Max): 1.85 V
Current - Off State (Max): 500 µA
Supplier Device Package: TO-247AD
Part Status: Active
Current - On State (It (RMS)) (Max): 55 A
Voltage - Off State: 1.2 kV
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 470 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.93 EUR
50+6.45 EUR
100+5.92 EUR
Mindestbestellmenge: 2
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VS-40TPS16LHM3 vs-40tps16lhm3.pdf
VS-40TPS16LHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: SCR 1.6KV 55A TO-247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
SCR Type: Standard Recovery
Operating Temperature: -40°C ~ 125°C (TJ)
Current - Hold (Ih) (Max): 300 mA
Current - Gate Trigger (Igt) (Max): 150 mA
Current - Non Rep. Surge 50, 60Hz (Itsm): 500A @ 50Hz
Current - On State (It (AV)) (Max): 35 A
Voltage - Gate Trigger (Vgt) (Max): 2.5 V
Voltage - On State (Vtm) (Max): 1.92 V
Current - Off State (Max): 500 µA
Supplier Device Package: TO-247AD
Grade: Automotive
Part Status: Active
Current - On State (It (RMS)) (Max): 55 A
Voltage - Off State: 1.6 kV
Qualification: AEC-Q101
auf Bestellung 916 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.38 EUR
25+8 EUR
100+6.72 EUR
500+5.7 EUR
Mindestbestellmenge: 2
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VS-8EWF06SLHM3 vs-8ewf06slhm3.pdf
VS-8EWF06SLHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 600V 8A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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VS-8EWS12SLHM3 vs-8ews12shm3.pdf
VS-8EWS12SLHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1200V 8A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 1200 V
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.9 EUR
Mindestbestellmenge: 3000
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VS-8EWS16SLHM3 vs-8ews16slhm3.pdf
VS-8EWS16SLHM3
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE STANDARD 1600V 8A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-252AA (DPAK)
Operating Temperature - Junction: -40°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1600 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 50 µA @ 1600 V
Qualification: AEC-Q101
auf Bestellung 8500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.35 EUR
6000+1.27 EUR
Mindestbestellmenge: 3000
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VS-RA160FA120 vs-ra160fa120.pdf
VS-RA160FA120
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE GP 1200V 91A SOT227
Current - Reverse Leakage @ Vr: 150 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 100 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOT-227
Current - Average Rectified (Io) (per Diode): 91A
Diode Configuration: 2 Independent
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Chassis Mount
Package / Case: SOT-227-4, miniBLOC
Packaging: Bulk
auf Bestellung 143 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+37.1 EUR
10+26.89 EUR
100+22.14 EUR
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VS-RA220FA120 vs-ra220fa120.pdf
VS-RA220FA120
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE MOD GP 1200V 108A SOT-227
Packaging: Bulk
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 108A
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 1.31 V @ 110 A
Current - Reverse Leakage @ Vr: 150 µA @ 1200 V
auf Bestellung 347 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+42.59 EUR
10+31.06 EUR
100+24.88 EUR
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VS-UFH280FA30 vs-ufh280fa30.pdf
VS-UFH280FA30
Hersteller: Vishay General Semiconductor - Diodes Division
Description: DIODE MODULE GP 300V 160A SOT227
Packaging: Tube
Package / Case: SOT-227-4, miniBLOC
Mounting Type: Chassis Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 58 ns
Technology: Standard
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 160A (DC)
Supplier Device Package: SOT-227
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 300 V
Voltage - Forward (Vf) (Max) @ If: 1.27 V @ 100 A
Current - Reverse Leakage @ Vr: 100 µA @ 300 V
auf Bestellung 348 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+35.16 EUR
10+25.43 EUR
100+20.8 EUR
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