| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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| WMP09N70C2 | WAYON | WMP09N70C2-CYG THT N channel transistors |
auf Bestellung 2 Stücke: Lieferzeit 7-14 Tag (e) |
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WMP09N90C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 900V; 4.8A; Idm: 16A; 85W Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 900V Drain current: 4.8A Pulsed drain current: 16A Power dissipation: 85W Case: TO251 Gate-source voltage: ±30V On-state resistance: 1.37Ω Mounting: THT Gate charge: 18nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 687 Stücke: Lieferzeit 14-21 Tag (e) |
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WMP09N90C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 900V; 4.8A; Idm: 16A; 85W Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 900V Drain current: 4.8A Pulsed drain current: 16A Power dissipation: 85W Case: TO251 Gate-source voltage: ±30V On-state resistance: 1.37Ω Mounting: THT Gate charge: 18nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 687 Stücke: Lieferzeit 7-14 Tag (e) |
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WMP10N60C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 8A; 57W; TO251 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Power dissipation: 57W Case: TO251 Gate-source voltage: ±30V On-state resistance: 690mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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WMP10N65C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 8A; 57W; TO251 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Power dissipation: 57W Case: TO251 Gate-source voltage: ±30V On-state resistance: 690mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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WMP10N70C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 7.5A; 57W; TO251 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 700V Drain current: 7.5A Power dissipation: 57W Case: TO251 Gate-source voltage: ±30V On-state resistance: 920mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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WMP10N80M3 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO251 Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 10A Power dissipation: 85W Case: TO251 Gate-source voltage: ±30V On-state resistance: 1.03Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| WMP119N10LG2 | WAYON | WMP119N10LG2-CYG THT N channel transistors |
auf Bestellung 200 Stücke: Lieferzeit 7-14 Tag (e) |
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WMP11N65C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 9A; 63W; TO251 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 9A Power dissipation: 63W Case: TO251 Gate-source voltage: ±30V On-state resistance: 0.54Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 121 Stücke: Lieferzeit 14-21 Tag (e) |
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WMP11N65C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 9A; 63W; TO251 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 9A Power dissipation: 63W Case: TO251 Gate-source voltage: ±30V On-state resistance: 0.54Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 121 Stücke: Lieferzeit 7-14 Tag (e) |
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WMP11N70C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 8A; 63W; TO251 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 700V Drain current: 8A Power dissipation: 63W Case: TO251 Gate-source voltage: ±30V On-state resistance: 0.68Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 305 Stücke: Lieferzeit 14-21 Tag (e) |
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WMP11N70C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 8A; 63W; TO251 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 700V Drain current: 8A Power dissipation: 63W Case: TO251 Gate-source voltage: ±30V On-state resistance: 0.68Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 305 Stücke: Lieferzeit 7-14 Tag (e) |
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WMP12N80M3 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 12A; 86W; TO251 Case: TO251 Mounting: THT Kind of package: tube On-state resistance: 620mΩ Drain current: 12A Power dissipation: 86W Gate-source voltage: ±30V Drain-source voltage: 800V Kind of channel: enhancement Technology: WMOS™ M3 Type of transistor: N-MOSFET Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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WMP14N60C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 11A; 85W; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Power dissipation: 85W Case: TO251 Gate-source voltage: ±30V On-state resistance: 405mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: WMOS™ C2 |
auf Bestellung 204 Stücke: Lieferzeit 14-21 Tag (e) |
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WMP14N60C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 11A; 85W; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Power dissipation: 85W Case: TO251 Gate-source voltage: ±30V On-state resistance: 405mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: WMOS™ C2 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 204 Stücke: Lieferzeit 7-14 Tag (e) |
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WMP14N65C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 11A; 85W; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 11A Power dissipation: 85W Case: TO251 Gate-source voltage: ±30V On-state resistance: 405mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: WMOS™ C2 |
auf Bestellung 5 Stücke: Lieferzeit 14-21 Tag (e) |
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WMP14N65C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 11A; 85W; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 11A Power dissipation: 85W Case: TO251 Gate-source voltage: ±30V On-state resistance: 405mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: WMOS™ C2 Anzahl je Verpackung: 1 Stücke |
auf Bestellung 5 Stücke: Lieferzeit 7-14 Tag (e) |
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WMP14N70C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 11A; 85W; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 700V Drain current: 11A Power dissipation: 85W Case: TO251 Gate-source voltage: ±30V On-state resistance: 530mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: WMOS™ C2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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WMP16N60C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 13A; 86W; TO251 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Power dissipation: 86W Case: TO251 Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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WMP16N60FD | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 86W; TO251 Type of transistor: N-MOSFET Technology: WMOS™ FD Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Power dissipation: 86W Case: TO251 Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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WMP16N65C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 86W; TO251 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 13A Power dissipation: 86W Case: TO251 Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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WMP16N65FD | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 13A; 86W; TO251 Type of transistor: N-MOSFET Technology: WMOS™ FD Polarisation: unipolar Drain-source voltage: 650V Drain current: 13A Power dissipation: 86W Case: TO251 Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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WMP16N70C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 12A; 86W; TO251 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 700V Drain current: 12A Power dissipation: 86W Case: TO251 Gate-source voltage: ±30V On-state resistance: 0.42Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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WMP20N60C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 15A; 86W; TO251 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 15A Power dissipation: 86W Case: TO251 Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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WMP20N65C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 15A; 86W; TO251 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 15A Power dissipation: 86W Case: TO251 Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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WMPN40N50D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 40A; Idm: 160A; 462W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 500V Drain current: 40A Pulsed drain current: 160A Power dissipation: 462W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 165.3nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 174 Stücke: Lieferzeit 14-21 Tag (e) |
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WMPN40N50D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 40A; Idm: 160A; 462W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 500V Drain current: 40A Pulsed drain current: 160A Power dissipation: 462W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 165.3nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 174 Stücke: Lieferzeit 7-14 Tag (e) |
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WMQ020N03LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 75A; Idm: 472A; 44.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 75A Pulsed drain current: 472A Power dissipation: 44.6W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 65 Stücke: Lieferzeit 14-21 Tag (e) |
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WMQ020N03LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 75A; Idm: 472A; 44.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 75A Pulsed drain current: 472A Power dissipation: 44.6W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Gate charge: 33nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 65 Stücke: Lieferzeit 7-14 Tag (e) |
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WMQ023N03LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 48A; Idm: 248A; 46.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 48A Pulsed drain current: 248A Power dissipation: 46.2W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: SMD Gate charge: 67nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 75 Stücke: Lieferzeit 14-21 Tag (e) |
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WMQ023N03LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 48A; Idm: 248A; 46.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 48A Pulsed drain current: 248A Power dissipation: 46.2W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 4.5mΩ Mounting: SMD Gate charge: 67nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 75 Stücke: Lieferzeit 7-14 Tag (e) |
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WMQ032N04LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 56A; Idm: 360A; 44W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 56A Pulsed drain current: 360A Power dissipation: 44W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 16 Stücke: Lieferzeit 14-21 Tag (e) |
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WMQ032N04LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 56A; Idm: 360A; 44W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 56A Pulsed drain current: 360A Power dissipation: 44W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: SMD Gate charge: 50nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 16 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ040N03LG2 | WAYON | WMQ040N03LG2-CYG SMD N channel transistors |
auf Bestellung 298 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ048NV6HG4 | WAYON | WMQ048NV6HG4-CYG SMD N channel transistors |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ048NV6LG4 | WAYON | WMQ048NV6LG4-CYG SMD N channel transistors |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ050N03LG4 | WAYON | WMQ050N03LG4-CYG SMD N channel transistors |
auf Bestellung 362 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ050N04LG2 | WAYON | WMQ050N04LG2-CYG SMD N channel transistors |
auf Bestellung 108 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ060N04LG2 | WAYON | WMQ060N04LG2-CYG SMD N channel transistors |
auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ060N08LG2 | WAYON | WMQ060N08LG2-CYG SMD N channel transistors |
auf Bestellung 86 Stücke: Lieferzeit 7-14 Tag (e) |
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WMQ080N03LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 17.7A; Idm: 112A; 21.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 17.7A Pulsed drain current: 112A Power dissipation: 21.5W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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WMQ080N03LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 17.7A; Idm: 112A; 21.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 17.7A Pulsed drain current: 112A Power dissipation: 21.5W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ090N04LG2 | WAYON | WMQ090N04LG2-CYG SMD N channel transistors |
auf Bestellung 490 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ090NV6LG4 | WAYON | WMQ090NV6LG4-CYG SMD N channel transistors |
auf Bestellung 422 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ098N03LG2 | WAYON | WMQ098N03LG2-CYG SMD N channel transistors |
auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ099N10LG2 | WAYON | WMQ099N10LG2-CYG SMD N channel transistors |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ10N10TS | WAYON | WMQ10N10TS-CYG SMD N channel transistors |
auf Bestellung 195 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ119N10LG2 | WAYON | WMQ119N10LG2-CYG SMD N channel transistors |
auf Bestellung 68 Stücke: Lieferzeit 7-14 Tag (e) |
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WMQ12P10TS | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -12A; Idm: -48A; 30W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -12A Pulsed drain current: -48A Power dissipation: 30W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 65nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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WMQ12P10TS | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -12A; Idm: -48A; 30W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -12A Pulsed drain current: -48A Power dissipation: 30W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 65nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ140DNV6LG4 | WAYON | WMQ140DNV6LG4-CYG Multi channel transistors |
auf Bestellung 1190 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ140NV6LG4 | WAYON | WMQ140NV6LG4-CYG SMD N channel transistors |
auf Bestellung 480 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ15DN04TS | WAYON | WMQ15DN04TS-CYG Multi channel transistors |
auf Bestellung 378 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ175N10HG4 | WAYON | WMQ175N10HG4-CYG SMD N channel transistors |
auf Bestellung 475 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ175N10LG4 | WAYON | WMQ175N10LG4-CYG SMD N channel transistors |
auf Bestellung 501 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMQ18P04TS | WAYON | WMQ18P04TS-CYG SMD P channel transistors |
auf Bestellung 497 Stücke: Lieferzeit 7-14 Tag (e) |
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WMQ20DN06TS | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 20A; Idm: 80A; 22.7W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 20A Pulsed drain current: 80A Power dissipation: 22.7W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
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WMQ20DN06TS | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 20A; Idm: 80A; 22.7W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 20A Pulsed drain current: 80A Power dissipation: 22.7W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 450 Stücke: Lieferzeit 7-14 Tag (e) |
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WMQ20N06TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 80A; 25W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 20A Pulsed drain current: 80A Power dissipation: 25W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 117 Stücke: Lieferzeit 14-21 Tag (e) |
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WMQ20N06TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 80A; 25W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 20A Pulsed drain current: 80A Power dissipation: 25W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 117 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMP09N70C2 |
Hersteller: WAYON
WMP09N70C2-CYG THT N channel transistors
WMP09N70C2-CYG THT N channel transistors
auf Bestellung 2 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 2+ | 35.75 EUR |
| 45+ | 1.59 EUR |
| 123+ | 0.59 EUR |
| 480+ | 0.39 EUR |
| WMP09N90C2 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 900V; 4.8A; Idm: 16A; 85W
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4.8A
Pulsed drain current: 16A
Power dissipation: 85W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.37Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 900V; 4.8A; Idm: 16A; 85W
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4.8A
Pulsed drain current: 16A
Power dissipation: 85W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.37Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 687 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 82+ | 0.87 EUR |
| 92+ | 0.78 EUR |
| 101+ | 0.71 EUR |
| WMP09N90C2 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 900V; 4.8A; Idm: 16A; 85W
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4.8A
Pulsed drain current: 16A
Power dissipation: 85W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.37Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 900V; 4.8A; Idm: 16A; 85W
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4.8A
Pulsed drain current: 16A
Power dissipation: 85W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.37Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 687 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 82+ | 0.87 EUR |
| 92+ | 0.78 EUR |
| 101+ | 0.71 EUR |
| WMP10N60C2 |
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Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 8A; 57W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 57W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 8A; 57W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 57W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMP10N65C2 |
![]() |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 8A; 57W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 57W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 8A; 57W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8A
Power dissipation: 57W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMP10N70C2 |
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Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 7.5A; 57W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 57W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 920mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 7.5A; 57W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 57W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 920mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMP10N80M3 |
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Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 85W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.03Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 85W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.03Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMP119N10LG2 |
Hersteller: WAYON
WMP119N10LG2-CYG THT N channel transistors
WMP119N10LG2-CYG THT N channel transistors
auf Bestellung 200 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 75+ | 0.95 EUR |
| 155+ | 0.46 EUR |
| 164+ | 0.44 EUR |
| 6000+ | 0.43 EUR |
| WMP11N65C2 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 9A; 63W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9A
Power dissipation: 63W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 9A; 63W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9A
Power dissipation: 63W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 121 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 80+ | 0.9 EUR |
| 110+ | 0.65 EUR |
| 121+ | 0.59 EUR |
| WMP11N65C2 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 9A; 63W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9A
Power dissipation: 63W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 9A; 63W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9A
Power dissipation: 63W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 121 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 80+ | 0.9 EUR |
| 110+ | 0.65 EUR |
| 121+ | 0.59 EUR |
| 480+ | 0.51 EUR |
| WMP11N70C2 |
![]() |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 8A; 63W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8A
Power dissipation: 63W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.68Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 8A; 63W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8A
Power dissipation: 63W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.68Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 305 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 103+ | 0.7 EUR |
| 114+ | 0.63 EUR |
| 129+ | 0.56 EUR |
| 142+ | 0.51 EUR |
| WMP11N70C2 |
![]() |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 8A; 63W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8A
Power dissipation: 63W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.68Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 8A; 63W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8A
Power dissipation: 63W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.68Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 305 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 103+ | 0.7 EUR |
| 114+ | 0.63 EUR |
| 129+ | 0.56 EUR |
| 142+ | 0.51 EUR |
| 360+ | 0.5 EUR |
| WMP12N80M3 |
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Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 12A; 86W; TO251
Case: TO251
Mounting: THT
Kind of package: tube
On-state resistance: 620mΩ
Drain current: 12A
Power dissipation: 86W
Gate-source voltage: ±30V
Drain-source voltage: 800V
Kind of channel: enhancement
Technology: WMOS™ M3
Type of transistor: N-MOSFET
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 12A; 86W; TO251
Case: TO251
Mounting: THT
Kind of package: tube
On-state resistance: 620mΩ
Drain current: 12A
Power dissipation: 86W
Gate-source voltage: ±30V
Drain-source voltage: 800V
Kind of channel: enhancement
Technology: WMOS™ M3
Type of transistor: N-MOSFET
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMP14N60C2 |
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Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 11A; 85W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 85W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 11A; 85W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 85W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
auf Bestellung 204 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 87+ | 0.83 EUR |
| 95+ | 0.76 EUR |
| 108+ | 0.66 EUR |
| 112+ | 0.64 EUR |
| WMP14N60C2 |
![]() |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 11A; 85W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 85W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 11A; 85W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 85W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Anzahl je Verpackung: 1 Stücke
auf Bestellung 204 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 87+ | 0.83 EUR |
| 95+ | 0.76 EUR |
| 108+ | 0.66 EUR |
| 112+ | 0.64 EUR |
| WMP14N65C2 |
![]() |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 11A; 85W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 85W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 11A; 85W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 85W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 14.3 EUR |
| WMP14N65C2 |
![]() |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 11A; 85W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 85W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 11A; 85W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 85W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 5+ | 14.3 EUR |
| 25+ | 2.86 EUR |
| 72+ | 0.99 EUR |
| 360+ | 0.69 EUR |
| WMP14N70C2 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 11A; 85W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 11A
Power dissipation: 85W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 11A; 85W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 11A
Power dissipation: 85W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMP16N60C2 |
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Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 13A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 13A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMP16N60FD |
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Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMP16N65C2 |
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Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMP16N65FD |
![]() |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 13A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 13A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMP16N70C2 |
![]() |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 12A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 12A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMP20N60C2 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 15A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 15A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMP20N65C2 |
![]() |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 15A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 15A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMPN40N50D1 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 40A; Idm: 160A; 462W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 462W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 165.3nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 40A; Idm: 160A; 462W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 462W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 165.3nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 174 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 22+ | 3.39 EUR |
| 24+ | 3.05 EUR |
| 30+ | 2.69 EUR |
| 120+ | 2.56 EUR |
| WMPN40N50D1 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 40A; Idm: 160A; 462W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 462W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 165.3nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 40A; Idm: 160A; 462W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 462W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 165.3nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 174 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 22+ | 3.39 EUR |
| 24+ | 3.05 EUR |
| 30+ | 2.69 EUR |
| 120+ | 2.56 EUR |
| WMQ020N03LG4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 75A; Idm: 472A; 44.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 75A
Pulsed drain current: 472A
Power dissipation: 44.6W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 75A; Idm: 472A; 44.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 75A
Pulsed drain current: 472A
Power dissipation: 44.6W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 65 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 65+ | 1.1 EUR |
| WMQ020N03LG4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 75A; Idm: 472A; 44.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 75A
Pulsed drain current: 472A
Power dissipation: 44.6W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 75A; Idm: 472A; 44.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 75A
Pulsed drain current: 472A
Power dissipation: 44.6W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 65 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 65+ | 1.1 EUR |
| 100+ | 0.72 EUR |
| 500+ | 0.46 EUR |
| 3000+ | 0.43 EUR |
| WMQ023N03LG2 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 48A; Idm: 248A; 46.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 48A
Pulsed drain current: 248A
Power dissipation: 46.2W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 48A; Idm: 248A; 46.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 48A
Pulsed drain current: 248A
Power dissipation: 46.2W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 75 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 75+ | 0.96 EUR |
| WMQ023N03LG2 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 48A; Idm: 248A; 46.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 48A
Pulsed drain current: 248A
Power dissipation: 46.2W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 48A; Idm: 248A; 46.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 48A
Pulsed drain current: 248A
Power dissipation: 46.2W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 75 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 75+ | 0.96 EUR |
| 100+ | 0.72 EUR |
| 500+ | 0.45 EUR |
| 3000+ | 0.42 EUR |
| WMQ032N04LG2 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56A; Idm: 360A; 44W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 56A
Pulsed drain current: 360A
Power dissipation: 44W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56A; Idm: 360A; 44W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 56A
Pulsed drain current: 360A
Power dissipation: 44W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 16 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.46 EUR |
| WMQ032N04LG2 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56A; Idm: 360A; 44W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 56A
Pulsed drain current: 360A
Power dissipation: 44W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 56A; Idm: 360A; 44W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 56A
Pulsed drain current: 360A
Power dissipation: 44W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 50nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 16 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 16+ | 4.46 EUR |
| 25+ | 2.86 EUR |
| 100+ | 0.72 EUR |
| 500+ | 0.42 EUR |
| 3000+ | 0.4 EUR |
| WMQ040N03LG2 |
Hersteller: WAYON
WMQ040N03LG2-CYG SMD N channel transistors
WMQ040N03LG2-CYG SMD N channel transistors
auf Bestellung 298 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 112+ | 0.64 EUR |
| 298+ | 0.24 EUR |
| 12000+ | 0.21 EUR |
| WMQ048NV6HG4 |
Hersteller: WAYON
WMQ048NV6HG4-CYG SMD N channel transistors
WMQ048NV6HG4-CYG SMD N channel transistors
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 69+ | 1.04 EUR |
| 100+ | 0.72 EUR |
| 104+ | 0.69 EUR |
| 12000+ | 0.4 EUR |
| WMQ048NV6LG4 |
Hersteller: WAYON
WMQ048NV6LG4-CYG SMD N channel transistors
WMQ048NV6LG4-CYG SMD N channel transistors
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 69+ | 1.04 EUR |
| 100+ | 0.72 EUR |
| 104+ | 0.69 EUR |
| 12000+ | 0.4 EUR |
| WMQ050N03LG4 |
Hersteller: WAYON
WMQ050N03LG4-CYG SMD N channel transistors
WMQ050N03LG4-CYG SMD N channel transistors
auf Bestellung 362 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 115+ | 0.63 EUR |
| 362+ | 0.2 EUR |
| 12000+ | 0.17 EUR |
| WMQ050N04LG2 |
Hersteller: WAYON
WMQ050N04LG2-CYG SMD N channel transistors
WMQ050N04LG2-CYG SMD N channel transistors
auf Bestellung 108 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 79+ | 0.92 EUR |
| 108+ | 0.66 EUR |
| 126+ | 0.57 EUR |
| 12000+ | 0.34 EUR |
| WMQ060N04LG2 |
Hersteller: WAYON
WMQ060N04LG2-CYG SMD N channel transistors
WMQ060N04LG2-CYG SMD N channel transistors
auf Bestellung 500 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 112+ | 0.64 EUR |
| 280+ | 0.26 EUR |
| 296+ | 0.24 EUR |
| WMQ060N08LG2 |
Hersteller: WAYON
WMQ060N08LG2-CYG SMD N channel transistors
WMQ060N08LG2-CYG SMD N channel transistors
auf Bestellung 86 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 57+ | 1.27 EUR |
| 86+ | 0.83 EUR |
| 12000+ | 0.59 EUR |
| WMQ080N03LG2 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 17.7A; Idm: 112A; 21.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 17.7A
Pulsed drain current: 112A
Power dissipation: 21.5W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 17.7A; Idm: 112A; 21.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 17.7A
Pulsed drain current: 112A
Power dissipation: 21.5W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 105+ | 0.69 EUR |
| 264+ | 0.27 EUR |
| 317+ | 0.23 EUR |
| 334+ | 0.21 EUR |
| 500+ | 0.19 EUR |
| WMQ080N03LG2 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 17.7A; Idm: 112A; 21.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 17.7A
Pulsed drain current: 112A
Power dissipation: 21.5W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 17.7A; Idm: 112A; 21.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 17.7A
Pulsed drain current: 112A
Power dissipation: 21.5W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 500 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 105+ | 0.69 EUR |
| 264+ | 0.27 EUR |
| 317+ | 0.23 EUR |
| 334+ | 0.21 EUR |
| 500+ | 0.19 EUR |
| 3000+ | 0.17 EUR |
| 6000+ | 0.16 EUR |
| WMQ090N04LG2 |
Hersteller: WAYON
WMQ090N04LG2-CYG SMD N channel transistors
WMQ090N04LG2-CYG SMD N channel transistors
auf Bestellung 490 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 85+ | 0.85 EUR |
| 360+ | 0.2 EUR |
| 382+ | 0.19 EUR |
| WMQ090NV6LG4 |
Hersteller: WAYON
WMQ090NV6LG4-CYG SMD N channel transistors
WMQ090NV6LG4-CYG SMD N channel transistors
auf Bestellung 422 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 87+ | 0.83 EUR |
| 280+ | 0.26 EUR |
| 296+ | 0.24 EUR |
| WMQ098N03LG2 |
Hersteller: WAYON
WMQ098N03LG2-CYG SMD N channel transistors
WMQ098N03LG2-CYG SMD N channel transistors
auf Bestellung 500 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 106+ | 0.68 EUR |
| 451+ | 0.16 EUR |
| 477+ | 0.15 EUR |
| WMQ099N10LG2 |
Hersteller: WAYON
WMQ099N10LG2-CYG SMD N channel transistors
WMQ099N10LG2-CYG SMD N channel transistors
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 71+ | 1.01 EUR |
| 100+ | 0.72 EUR |
| 12000+ | 0.44 EUR |
| WMQ10N10TS |
Hersteller: WAYON
WMQ10N10TS-CYG SMD N channel transistors
WMQ10N10TS-CYG SMD N channel transistors
auf Bestellung 195 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 93+ | 0.78 EUR |
| 195+ | 0.37 EUR |
| 254+ | 0.29 EUR |
| 12000+ | 0.17 EUR |
| WMQ119N10LG2 |
Hersteller: WAYON
WMQ119N10LG2-CYG SMD N channel transistors
WMQ119N10LG2-CYG SMD N channel transistors
auf Bestellung 68 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 59+ | 1.22 EUR |
| 68+ | 1.06 EUR |
| 95+ | 0.76 EUR |
| 12000+ | 0.45 EUR |
| WMQ12P10TS |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -12A; Idm: -48A; 30W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -12A
Pulsed drain current: -48A
Power dissipation: 30W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -12A; Idm: -48A; 30W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -12A
Pulsed drain current: -48A
Power dissipation: 30W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 95+ | 0.76 EUR |
| 159+ | 0.45 EUR |
| 177+ | 0.41 EUR |
| 199+ | 0.36 EUR |
| 500+ | 0.33 EUR |
| WMQ12P10TS |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -12A; Idm: -48A; 30W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -12A
Pulsed drain current: -48A
Power dissipation: 30W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -12A; Idm: -48A; 30W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -12A
Pulsed drain current: -48A
Power dissipation: 30W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 500 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 95+ | 0.76 EUR |
| 159+ | 0.45 EUR |
| 177+ | 0.41 EUR |
| 199+ | 0.36 EUR |
| 500+ | 0.33 EUR |
| 3000+ | 0.31 EUR |
| WMQ140DNV6LG4 |
Hersteller: WAYON
WMQ140DNV6LG4-CYG Multi channel transistors
WMQ140DNV6LG4-CYG Multi channel transistors
auf Bestellung 1190 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 106+ | 0.68 EUR |
| 264+ | 0.27 EUR |
| 278+ | 0.26 EUR |
| 12000+ | 0.25 EUR |
| WMQ140NV6LG4 |
Hersteller: WAYON
WMQ140NV6LG4-CYG SMD N channel transistors
WMQ140NV6LG4-CYG SMD N channel transistors
auf Bestellung 480 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 91+ | 0.79 EUR |
| 358+ | 0.2 EUR |
| 379+ | 0.19 EUR |
| WMQ15DN04TS |
Hersteller: WAYON
WMQ15DN04TS-CYG Multi channel transistors
WMQ15DN04TS-CYG Multi channel transistors
auf Bestellung 378 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 94+ | 0.77 EUR |
| 378+ | 0.19 EUR |
| 12000+ | 0.17 EUR |
| WMQ175N10HG4 |
Hersteller: WAYON
WMQ175N10HG4-CYG SMD N channel transistors
WMQ175N10HG4-CYG SMD N channel transistors
auf Bestellung 475 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 79+ | 0.92 EUR |
| 196+ | 0.37 EUR |
| 207+ | 0.35 EUR |
| 12000+ | 0.34 EUR |
| WMQ175N10LG4 |
Hersteller: WAYON
WMQ175N10LG4-CYG SMD N channel transistors
WMQ175N10LG4-CYG SMD N channel transistors
auf Bestellung 501 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 118+ | 0.61 EUR |
| 296+ | 0.24 EUR |
| 313+ | 0.23 EUR |
| 12000+ | 0.22 EUR |
| WMQ18P04TS |
Hersteller: WAYON
WMQ18P04TS-CYG SMD P channel transistors
WMQ18P04TS-CYG SMD P channel transistors
auf Bestellung 497 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 92+ | 0.78 EUR |
| 391+ | 0.18 EUR |
| 414+ | 0.17 EUR |
| WMQ20DN06TS |
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 20A; Idm: 80A; 22.7W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 22.7W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 20A; Idm: 80A; 22.7W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 22.7W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 125+ | 0.57 EUR |
| 220+ | 0.33 EUR |
| 266+ | 0.27 EUR |
| 302+ | 0.24 EUR |
| WMQ20DN06TS |
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 20A; Idm: 80A; 22.7W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 22.7W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 20A; Idm: 80A; 22.7W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 22.7W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 450 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 125+ | 0.57 EUR |
| 220+ | 0.33 EUR |
| 266+ | 0.27 EUR |
| 302+ | 0.24 EUR |
| 500+ | 0.22 EUR |
| 3000+ | 0.21 EUR |
| WMQ20N06TS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 80A; 25W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 25W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 80A; 25W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 25W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 117 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 117+ | 0.61 EUR |
| WMQ20N06TS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 80A; 25W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 25W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 80A; 25W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 25W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 117 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 117+ | 0.61 EUR |
| 500+ | 0.16 EUR |
| 3000+ | 0.14 EUR |





