| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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WMS080N10LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 260A; 3W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 10A Pulsed drain current: 260A Power dissipation: 3W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 15.7nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
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WMS080N10LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 260A; 3W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 10A Pulsed drain current: 260A Power dissipation: 3W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Gate charge: 15.7nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMS08DH04T1 | WAYON | WMS08DH04T1-CYG Multi channel transistors |
auf Bestellung 488 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMS08DN06TS | WAYON | WMS08DN06TS-CYG Multi channel transistors |
auf Bestellung 492 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMS08DP03TS | WAYON | WMS08DP03TS-CYG Multi channel transistors |
auf Bestellung 384 Stücke: Lieferzeit 7-14 Tag (e) |
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WMS08N06TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 32A; 3.1W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 8A Pulsed drain current: 32A Power dissipation: 3.1W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 988 Stücke: Lieferzeit 14-21 Tag (e) |
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WMS08N06TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 32A; 3.1W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 8A Pulsed drain current: 32A Power dissipation: 3.1W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 988 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMS08P03T1 | WAYON | WMS08P03T1-CYG SMD P channel transistors |
auf Bestellung 990 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMS08P04TS | WAYON | WMS08P04TS-CYG SMD P channel transistors |
auf Bestellung 476 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMS090DNV6LG4 | WAYON | WMS090DNV6LG4-CYG Multi channel transistors |
auf Bestellung 495 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMS090N04LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Case: SOP8 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| WMS090NV6LG4 | WAYON | WMS090NV6LG4-CYG SMD N channel transistors |
auf Bestellung 475 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMS099N10LGS | WAYON | WMS099N10LGS-CYG SMD N channel transistors |
auf Bestellung 90 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMS09DP03TS | WAYON | WMS09DP03TS-CYG Multi channel transistors |
auf Bestellung 132 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMS09N06TS | WAYON | WMS09N06TS-CYG SMD N channel transistors |
auf Bestellung 475 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMS09P02TS | WAYON | WMS09P02TS-CYG SMD P channel transistors |
auf Bestellung 498 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMS09P06TS | WAYON | WMS09P06TS-CYG SMD P channel transistors |
auf Bestellung 349 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMS10DH04TS | WAYON | WMS10DH04TS-CYG Multi channel transistors |
auf Bestellung 369 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMS10DN04TS | WAYON | WMS10DN04TS-CYG Multi channel transistors |
auf Bestellung 459 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMS10N04TS | WAYON | WMS10N04TS-CYG SMD N channel transistors |
auf Bestellung 428 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMS119N10LG2 | WAYON | WMS119N10LG2-CYG SMD N channel transistors |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMS11P04T1 | WAYON | WMS11P04T1-CYG SMD P channel transistors |
auf Bestellung 490 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMS12P03T1 | WAYON | WMS12P03T1-CYG SMD P channel transistors |
auf Bestellung 477 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMS13N03T1 | WAYON | WMS13N03T1-CYG SMD N channel transistors |
auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMS13P04T1 | WAYON | WMS13P04T1-CYG SMD P channel transistors |
auf Bestellung 434 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMS140DNV6LG4 | WAYON | WMS140DNV6LG4-CYG Multi channel transistors |
auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMS140NV6LG4 | WAYON | WMS140NV6LG4-CYG SMD N channel transistors |
auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMS14DN03T1 | WAYON | WMS14DN03T1-CYG Multi channel transistors |
auf Bestellung 460 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMS14P03T1 | WAYON | WMS14P03T1-CYG SMD P channel transistors |
auf Bestellung 347 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMS15N03T1 | WAYON | WMS15N03T1-CYG SMD N channel transistors |
auf Bestellung 453 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMS15P02T1 | WAYON | WMS15P02T1-CYG SMD P channel transistors |
auf Bestellung 488 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMS175DN10LG4 | WAYON | WMS175DN10LG4-CYG Multi channel transistors |
auf Bestellung 80 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMS175N10HG4 | WAYON | WMS175N10HG4-CYG SMD N channel transistors |
auf Bestellung 471 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMS175N10LG4 | WAYON | WMS175N10LG4-CYG SMD N channel transistors |
auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMS17P03TS | WAYON | WMS17P03TS-CYG SMD P channel transistors |
auf Bestellung 483 Stücke: Lieferzeit 7-14 Tag (e) |
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WMS240N10LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 32A; 3.1W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 8A Pulsed drain current: 32A Power dissipation: 3.1W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
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WMS240N10LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 32A; 3.1W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 8A Pulsed drain current: 32A Power dissipation: 3.1W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMS690N15HG2 | WAYON | WMS690N15HG2-CYG SMD N channel transistors |
auf Bestellung 93 Stücke: Lieferzeit 7-14 Tag (e) |
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WMT04N10TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 3.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 3.5A Pulsed drain current: 14A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 4nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 420 Stücke: Lieferzeit 14-21 Tag (e) |
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WMT04N10TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 3.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 3.5A Pulsed drain current: 14A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 4nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 420 Stücke: Lieferzeit 7-14 Tag (e) |
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WMT04N15TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 4A; Idm: 16A; 3.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 4A Pulsed drain current: 16A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 454 Stücke: Lieferzeit 14-21 Tag (e) |
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WMT04N15TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 4A; Idm: 16A; 3.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 4A Pulsed drain current: 16A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.16Ω Mounting: SMD Gate charge: 25nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 454 Stücke: Lieferzeit 7-14 Tag (e) |
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WMT04P06TS | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3.8A; Idm: -15.2A; 2.7W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -3.8A Pulsed drain current: -15.2A Power dissipation: 2.7W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.115Ω Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 355 Stücke: Lieferzeit 14-21 Tag (e) |
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WMT04P06TS | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3.8A; Idm: -15.2A; 2.7W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -3.8A Pulsed drain current: -15.2A Power dissipation: 2.7W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.115Ω Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 355 Stücke: Lieferzeit 7-14 Tag (e) |
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WMT04P10TS | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -3.6A; Idm: -14.4A; 3.5W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -3.6A Pulsed drain current: -14.4A Power dissipation: 3.5W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.17Ω Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 597 Stücke: Lieferzeit 14-21 Tag (e) |
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WMT04P10TS | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -3.6A; Idm: -14.4A; 3.5W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -3.6A Pulsed drain current: -14.4A Power dissipation: 3.5W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.17Ω Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 597 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMT05N10T1 | WAYON | WMT05N10T1-CYG SMD N channel transistors |
auf Bestellung 400 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMT05N12TS | WAYON | WMT05N12TS-CYG SMD N channel transistors |
auf Bestellung 475 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMT07N03T1 | WAYON | WMT07N03T1-CYG SMD N channel transistors |
auf Bestellung 285 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMT07N06TS | WAYON | WMT07N06TS-CYG SMD N channel transistors |
auf Bestellung 202 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMT07N10TS | WAYON | WMT07N10TS-CYG SMD N channel transistors |
auf Bestellung 429 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMT4N65D1B | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4A; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4A Case: SOT223 Gate-source voltage: ±30V On-state resistance: 2.55Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
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WMU080N10HG2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 168A; 28.4W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 42A Pulsed drain current: 168A Power dissipation: 28.4W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 8.8mΩ Mounting: THT Gate charge: 25.4nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 95 Stücke: Lieferzeit 14-21 Tag (e) |
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WMU080N10HG2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 168A; 28.4W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 42A Pulsed drain current: 168A Power dissipation: 28.4W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 8.8mΩ Mounting: THT Gate charge: 25.4nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 95 Stücke: Lieferzeit 7-14 Tag (e) |
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WMX3N150D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 90W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 1.5kV Drain current: 3A Pulsed drain current: 12A Power dissipation: 90W Case: TO3PF Gate-source voltage: ±30V On-state resistance: 5.7Ω Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 361 Stücke: Lieferzeit 14-21 Tag (e) |
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WMX3N150D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 90W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 1.5kV Drain current: 3A Pulsed drain current: 12A Power dissipation: 90W Case: TO3PF Gate-source voltage: ±30V On-state resistance: 5.7Ω Mounting: THT Gate charge: 40nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 361 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMX4N150D1 | WAYON | WMX4N150D1-CYG THT N channel transistors |
auf Bestellung 194 Stücke: Lieferzeit 7-14 Tag (e) |
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| WMZ13N65EM | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 6.5A; Idm: 35A; 85W Type of transistor: N-MOSFET Technology: WMOS™ EM Polarisation: unipolar Drain-source voltage: 650V Drain current: 6.5A Pulsed drain current: 35A Power dissipation: 85W Case: DFN8x8 Gate-source voltage: ±30V On-state resistance: 390mΩ Mounting: SMD Gate charge: 20.3nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| WMZ26N60C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.5A Pulsed drain current: 40A Power dissipation: 135W Case: DFN8x8 Gate-source voltage: ±30V On-state resistance: 0.205Ω Mounting: SMD Gate charge: 22.1nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| WMZ26N65C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.5A Pulsed drain current: 40A Power dissipation: 135W Case: DFN8x8 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 22.1nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| WMS080N10LG2 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 260A; 3W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 260A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 15.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 260A; 3W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 260A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 15.7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 87+ | 0.83 EUR |
| 100+ | 0.72 EUR |
| WMS080N10LG2 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 260A; 3W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 260A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 15.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 260A; 3W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 260A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 15.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 87+ | 0.83 EUR |
| 100+ | 0.72 EUR |
| 500+ | 0.4 EUR |
| 2000+ | 0.38 EUR |
| WMS08DH04T1 |
Hersteller: WAYON
WMS08DH04T1-CYG Multi channel transistors
WMS08DH04T1-CYG Multi channel transistors
auf Bestellung 488 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 125+ | 0.58 EUR |
| 417+ | 0.17 EUR |
| 443+ | 0.16 EUR |
| WMS08DN06TS |
Hersteller: WAYON
WMS08DN06TS-CYG Multi channel transistors
WMS08DN06TS-CYG Multi channel transistors
auf Bestellung 492 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 94+ | 0.77 EUR |
| 319+ | 0.22 EUR |
| 336+ | 0.21 EUR |
| 8000+ | 0.2 EUR |
| WMS08DP03TS |
Hersteller: WAYON
WMS08DP03TS-CYG Multi channel transistors
WMS08DP03TS-CYG Multi channel transistors
auf Bestellung 384 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 94+ | 0.77 EUR |
| 319+ | 0.22 EUR |
| 336+ | 0.21 EUR |
| 8000+ | 0.2 EUR |
| WMS08N06TS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 32A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 32A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 988 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 120+ | 0.6 EUR |
| 329+ | 0.22 EUR |
| 410+ | 0.17 EUR |
| 435+ | 0.16 EUR |
| 500+ | 0.15 EUR |
| WMS08N06TS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 32A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 32A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 988 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 120+ | 0.6 EUR |
| 329+ | 0.22 EUR |
| 410+ | 0.17 EUR |
| 435+ | 0.16 EUR |
| 500+ | 0.15 EUR |
| 2000+ | 0.13 EUR |
| WMS08P03T1 |
Hersteller: WAYON
WMS08P03T1-CYG SMD P channel transistors
WMS08P03T1-CYG SMD P channel transistors
auf Bestellung 990 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 111+ | 0.64 EUR |
| 618+ | 0.12 EUR |
| 650+ | 0.11 EUR |
| WMS08P04TS |
Hersteller: WAYON
WMS08P04TS-CYG SMD P channel transistors
WMS08P04TS-CYG SMD P channel transistors
auf Bestellung 476 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 139+ | 0.52 EUR |
| 476+ | 0.16 EUR |
| 8000+ | 0.12 EUR |
| WMS090DNV6LG4 |
Hersteller: WAYON
WMS090DNV6LG4-CYG Multi channel transistors
WMS090DNV6LG4-CYG Multi channel transistors
auf Bestellung 495 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 102+ | 0.7 EUR |
| 242+ | 0.3 EUR |
| 257+ | 0.28 EUR |
| 8000+ | 0.27 EUR |
| WMS090N04LG2 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| WMS090NV6LG4 |
Hersteller: WAYON
WMS090NV6LG4-CYG SMD N channel transistors
WMS090NV6LG4-CYG SMD N channel transistors
auf Bestellung 475 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 124+ | 0.58 EUR |
| 382+ | 0.19 EUR |
| 404+ | 0.18 EUR |
| 8000+ | 0.17 EUR |
| WMS099N10LGS |
Hersteller: WAYON
WMS099N10LGS-CYG SMD N channel transistors
WMS099N10LGS-CYG SMD N channel transistors
auf Bestellung 90 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 63+ | 1.14 EUR |
| 90+ | 0.8 EUR |
| 94+ | 0.76 EUR |
| 8000+ | 0.45 EUR |
| WMS09DP03TS |
Hersteller: WAYON
WMS09DP03TS-CYG Multi channel transistors
WMS09DP03TS-CYG Multi channel transistors
auf Bestellung 132 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 79+ | 0.91 EUR |
| 132+ | 0.54 EUR |
| 8000+ | 0.34 EUR |
| WMS09N06TS |
Hersteller: WAYON
WMS09N06TS-CYG SMD N channel transistors
WMS09N06TS-CYG SMD N channel transistors
auf Bestellung 475 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 96+ | 0.75 EUR |
| 391+ | 0.18 EUR |
| 414+ | 0.17 EUR |
| WMS09P02TS |
Hersteller: WAYON
WMS09P02TS-CYG SMD P channel transistors
WMS09P02TS-CYG SMD P channel transistors
auf Bestellung 498 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 109+ | 0.66 EUR |
| 498+ | 0.14 EUR |
| 8000+ | 0.13 EUR |
| WMS09P06TS |
Hersteller: WAYON
WMS09P06TS-CYG SMD P channel transistors
WMS09P06TS-CYG SMD P channel transistors
auf Bestellung 349 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 122+ | 0.59 EUR |
| 296+ | 0.24 EUR |
| 313+ | 0.23 EUR |
| 8000+ | 0.22 EUR |
| WMS10DH04TS |
Hersteller: WAYON
WMS10DH04TS-CYG Multi channel transistors
WMS10DH04TS-CYG Multi channel transistors
auf Bestellung 369 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 125+ | 0.58 EUR |
| 369+ | 0.2 EUR |
| 8000+ | 0.16 EUR |
| WMS10DN04TS |
Hersteller: WAYON
WMS10DN04TS-CYG Multi channel transistors
WMS10DN04TS-CYG Multi channel transistors
auf Bestellung 459 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 115+ | 0.62 EUR |
| 388+ | 0.18 EUR |
| 410+ | 0.17 EUR |
| WMS10N04TS |
Hersteller: WAYON
WMS10N04TS-CYG SMD N channel transistors
WMS10N04TS-CYG SMD N channel transistors
auf Bestellung 428 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 105+ | 0.68 EUR |
| 428+ | 0.17 EUR |
| 8000+ | 0.13 EUR |
| WMS119N10LG2 |
Hersteller: WAYON
WMS119N10LG2-CYG SMD N channel transistors
WMS119N10LG2-CYG SMD N channel transistors
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 64+ | 1.13 EUR |
| 100+ | 0.72 EUR |
| 102+ | 0.7 EUR |
| 8000+ | 0.42 EUR |
| WMS11P04T1 |
Hersteller: WAYON
WMS11P04T1-CYG SMD P channel transistors
WMS11P04T1-CYG SMD P channel transistors
auf Bestellung 490 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 125+ | 0.58 EUR |
| 417+ | 0.17 EUR |
| 443+ | 0.16 EUR |
| WMS12P03T1 |
Hersteller: WAYON
WMS12P03T1-CYG SMD P channel transistors
WMS12P03T1-CYG SMD P channel transistors
auf Bestellung 477 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 120+ | 0.6 EUR |
| 447+ | 0.16 EUR |
| 472+ | 0.15 EUR |
| WMS13N03T1 |
Hersteller: WAYON
WMS13N03T1-CYG SMD N channel transistors
WMS13N03T1-CYG SMD N channel transistors
auf Bestellung 500 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 118+ | 0.61 EUR |
| 439+ | 0.16 EUR |
| 463+ | 0.15 EUR |
| WMS13P04T1 |
Hersteller: WAYON
WMS13P04T1-CYG SMD P channel transistors
WMS13P04T1-CYG SMD P channel transistors
auf Bestellung 434 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 123+ | 0.58 EUR |
| 298+ | 0.24 EUR |
| 315+ | 0.23 EUR |
| 8000+ | 0.22 EUR |
| WMS140DNV6LG4 |
Hersteller: WAYON
WMS140DNV6LG4-CYG Multi channel transistors
WMS140DNV6LG4-CYG Multi channel transistors
auf Bestellung 500 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 120+ | 0.6 EUR |
| 329+ | 0.22 EUR |
| 348+ | 0.21 EUR |
| 8000+ | 0.2 EUR |
| WMS140NV6LG4 |
Hersteller: WAYON
WMS140NV6LG4-CYG SMD N channel transistors
WMS140NV6LG4-CYG SMD N channel transistors
auf Bestellung 500 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 99+ | 0.72 EUR |
| 404+ | 0.18 EUR |
| 424+ | 0.17 EUR |
| 8000+ | 0.16 EUR |
| WMS14DN03T1 |
Hersteller: WAYON
WMS14DN03T1-CYG Multi channel transistors
WMS14DN03T1-CYG Multi channel transistors
auf Bestellung 460 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 94+ | 0.77 EUR |
| 319+ | 0.22 EUR |
| 336+ | 0.21 EUR |
| 8000+ | 0.2 EUR |
| WMS14P03T1 |
Hersteller: WAYON
WMS14P03T1-CYG SMD P channel transistors
WMS14P03T1-CYG SMD P channel transistors
auf Bestellung 347 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 120+ | 0.6 EUR |
| 332+ | 0.22 EUR |
| 347+ | 0.2 EUR |
| WMS15N03T1 |
Hersteller: WAYON
WMS15N03T1-CYG SMD N channel transistors
WMS15N03T1-CYG SMD N channel transistors
auf Bestellung 453 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 123+ | 0.58 EUR |
| 338+ | 0.21 EUR |
| 358+ | 0.2 EUR |
| 8000+ | 0.19 EUR |
| WMS15P02T1 |
Hersteller: WAYON
WMS15P02T1-CYG SMD P channel transistors
WMS15P02T1-CYG SMD P channel transistors
auf Bestellung 488 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 115+ | 0.62 EUR |
| 428+ | 0.17 EUR |
| 451+ | 0.16 EUR |
| 8000+ | 0.15 EUR |
| WMS175DN10LG4 |
Hersteller: WAYON
WMS175DN10LG4-CYG Multi channel transistors
WMS175DN10LG4-CYG Multi channel transistors
auf Bestellung 80 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 77+ | 0.93 EUR |
| 80+ | 0.89 EUR |
| 112+ | 0.64 EUR |
| 8000+ | 0.38 EUR |
| WMS175N10HG4 |
Hersteller: WAYON
WMS175N10HG4-CYG SMD N channel transistors
WMS175N10HG4-CYG SMD N channel transistors
auf Bestellung 471 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 113+ | 0.64 EUR |
| 313+ | 0.23 EUR |
| 332+ | 0.22 EUR |
| 8000+ | 0.21 EUR |
| WMS175N10LG4 |
Hersteller: WAYON
WMS175N10LG4-CYG SMD N channel transistors
WMS175N10LG4-CYG SMD N channel transistors
auf Bestellung 500 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 115+ | 0.62 EUR |
| 281+ | 0.25 EUR |
| 296+ | 0.24 EUR |
| 8000+ | 0.23 EUR |
| WMS17P03TS |
Hersteller: WAYON
WMS17P03TS-CYG SMD P channel transistors
WMS17P03TS-CYG SMD P channel transistors
auf Bestellung 483 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 85+ | 0.85 EUR |
| 201+ | 0.36 EUR |
| 213+ | 0.34 EUR |
| 8000+ | 0.32 EUR |
| WMS240N10LG2 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 32A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 32A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 139+ | 0.51 EUR |
| 243+ | 0.29 EUR |
| 296+ | 0.24 EUR |
| 334+ | 0.21 EUR |
| 500+ | 0.2 EUR |
| WMS240N10LG2 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 32A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 32A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 500 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 139+ | 0.51 EUR |
| 243+ | 0.29 EUR |
| 296+ | 0.24 EUR |
| 334+ | 0.21 EUR |
| 500+ | 0.2 EUR |
| 2000+ | 0.19 EUR |
| WMS690N15HG2 |
Hersteller: WAYON
WMS690N15HG2-CYG SMD N channel transistors
WMS690N15HG2-CYG SMD N channel transistors
auf Bestellung 93 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 68+ | 1.06 EUR |
| 93+ | 0.77 EUR |
| 107+ | 0.67 EUR |
| 8000+ | 0.4 EUR |
| WMT04N10TS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 420 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 148+ | 0.49 EUR |
| 350+ | 0.2 EUR |
| 420+ | 0.17 EUR |
| WMT04N10TS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 420 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 148+ | 0.49 EUR |
| 350+ | 0.2 EUR |
| 420+ | 0.17 EUR |
| 1000+ | 0.12 EUR |
| WMT04N15TS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 4A; Idm: 16A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 4A; Idm: 16A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 454 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 129+ | 0.56 EUR |
| 219+ | 0.33 EUR |
| 243+ | 0.29 EUR |
| 275+ | 0.26 EUR |
| 307+ | 0.23 EUR |
| WMT04N15TS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 4A; Idm: 16A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 4A; Idm: 16A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 454 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 129+ | 0.56 EUR |
| 219+ | 0.33 EUR |
| 243+ | 0.29 EUR |
| 275+ | 0.26 EUR |
| 307+ | 0.23 EUR |
| WMT04P06TS |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.8A; Idm: -15.2A; 2.7W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.8A
Pulsed drain current: -15.2A
Power dissipation: 2.7W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.115Ω
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.8A; Idm: -15.2A; 2.7W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.8A
Pulsed drain current: -15.2A
Power dissipation: 2.7W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.115Ω
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 355 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 100+ | 0.72 EUR |
| 239+ | 0.3 EUR |
| 317+ | 0.23 EUR |
| 355+ | 0.2 EUR |
| WMT04P06TS |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.8A; Idm: -15.2A; 2.7W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.8A
Pulsed drain current: -15.2A
Power dissipation: 2.7W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.115Ω
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.8A; Idm: -15.2A; 2.7W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.8A
Pulsed drain current: -15.2A
Power dissipation: 2.7W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.115Ω
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 355 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 100+ | 0.72 EUR |
| 239+ | 0.3 EUR |
| 317+ | 0.23 EUR |
| 355+ | 0.2 EUR |
| 1000+ | 0.17 EUR |
| WMT04P10TS |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -3.6A; Idm: -14.4A; 3.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -3.6A
Pulsed drain current: -14.4A
Power dissipation: 3.5W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -3.6A; Idm: -14.4A; 3.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -3.6A
Pulsed drain current: -14.4A
Power dissipation: 3.5W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 597 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 125+ | 0.57 EUR |
| 244+ | 0.29 EUR |
| 272+ | 0.26 EUR |
| 309+ | 0.23 EUR |
| 341+ | 0.21 EUR |
| WMT04P10TS |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -3.6A; Idm: -14.4A; 3.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -3.6A
Pulsed drain current: -14.4A
Power dissipation: 3.5W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -3.6A; Idm: -14.4A; 3.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -3.6A
Pulsed drain current: -14.4A
Power dissipation: 3.5W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 597 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 125+ | 0.57 EUR |
| 244+ | 0.29 EUR |
| 272+ | 0.26 EUR |
| 309+ | 0.23 EUR |
| 341+ | 0.21 EUR |
| 1000+ | 0.2 EUR |
| WMT05N10T1 |
Hersteller: WAYON
WMT05N10T1-CYG SMD N channel transistors
WMT05N10T1-CYG SMD N channel transistors
auf Bestellung 400 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 90+ | 0.8 EUR |
| 376+ | 0.19 EUR |
| 400+ | 0.18 EUR |
| 5000+ | 0.17 EUR |
| WMT05N12TS |
Hersteller: WAYON
WMT05N12TS-CYG SMD N channel transistors
WMT05N12TS-CYG SMD N channel transistors
auf Bestellung 475 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 113+ | 0.64 EUR |
| 313+ | 0.23 EUR |
| 332+ | 0.22 EUR |
| 5000+ | 0.21 EUR |
| WMT07N03T1 |
Hersteller: WAYON
WMT07N03T1-CYG SMD N channel transistors
WMT07N03T1-CYG SMD N channel transistors
auf Bestellung 285 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 111+ | 0.65 EUR |
| 285+ | 0.26 EUR |
| 396+ | 0.19 EUR |
| 5000+ | 0.11 EUR |
| WMT07N06TS |
Hersteller: WAYON
WMT07N06TS-CYG SMD N channel transistors
WMT07N06TS-CYG SMD N channel transistors
auf Bestellung 202 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 101+ | 0.71 EUR |
| 202+ | 0.36 EUR |
| 281+ | 0.26 EUR |
| 5000+ | 0.15 EUR |
| WMT07N10TS |
Hersteller: WAYON
WMT07N10TS-CYG SMD N channel transistors
WMT07N10TS-CYG SMD N channel transistors
auf Bestellung 429 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 113+ | 0.64 EUR |
| 391+ | 0.18 EUR |
| 414+ | 0.17 EUR |
| WMT4N65D1B |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 2.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 2.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMU080N10HG2 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 168A; 28.4W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Pulsed drain current: 168A
Power dissipation: 28.4W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: THT
Gate charge: 25.4nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 168A; 28.4W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Pulsed drain current: 168A
Power dissipation: 28.4W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: THT
Gate charge: 25.4nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 69+ | 1.04 EUR |
| 80+ | 0.9 EUR |
| 90+ | 0.8 EUR |
| WMU080N10HG2 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 168A; 28.4W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Pulsed drain current: 168A
Power dissipation: 28.4W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: THT
Gate charge: 25.4nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 168A; 28.4W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Pulsed drain current: 168A
Power dissipation: 28.4W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: THT
Gate charge: 25.4nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 95 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 69+ | 1.04 EUR |
| 80+ | 0.9 EUR |
| 90+ | 0.8 EUR |
| 250+ | 0.72 EUR |
| 1000+ | 0.69 EUR |
| WMX3N150D1 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 90W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 90W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 5.7Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 90W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 90W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 5.7Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 361 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 44+ | 1.63 EUR |
| 49+ | 1.47 EUR |
| 54+ | 1.33 EUR |
| 120+ | 1.17 EUR |
| 300+ | 1.13 EUR |
| WMX3N150D1 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 90W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 90W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 5.7Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 90W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 90W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 5.7Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 361 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 44+ | 1.63 EUR |
| 49+ | 1.47 EUR |
| 54+ | 1.33 EUR |
| 120+ | 1.17 EUR |
| 300+ | 1.13 EUR |
| WMX4N150D1 |
Hersteller: WAYON
WMX4N150D1-CYG THT N channel transistors
WMX4N150D1-CYG THT N channel transistors
auf Bestellung 194 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 43+ | 1.7 EUR |
| 56+ | 1.29 EUR |
| 59+ | 1.22 EUR |
| 900+ | 1.17 EUR |
| WMZ13N65EM |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 6.5A; Idm: 35A; 85W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.5A
Pulsed drain current: 35A
Power dissipation: 85W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 20.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 6.5A; Idm: 35A; 85W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.5A
Pulsed drain current: 35A
Power dissipation: 85W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 20.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMZ26N60C4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 0.205Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 0.205Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMZ26N65C4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH








