| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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WMP12N80M3 | WAYON |
 Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 12A; 86W; TO251 Case: TO251 Mounting: THT Kind of package: tube Power dissipation: 86W Polarisation: unipolar Technology: WMOS™ M3 Drain current: 12A Kind of channel: enhancement Drain-source voltage: 800V Type of transistor: N-MOSFET Gate-source voltage: ±30V On-state resistance: 620mΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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WMP13N80M3 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 13A; 130W; TO251 Type of transistor: N-MOSFET Technology: WMOS™ M3 Polarisation: unipolar Drain-source voltage: 800V Drain current: 13A Power dissipation: 130W Case: TO251 Gate-source voltage: ±30V On-state resistance: 0.48Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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WMP14N60C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 11A; 85W; TO251 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Power dissipation: 85W Case: TO251 Gate-source voltage: ±30V On-state resistance: 405mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 178 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMP14N65C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 11A; 85W; TO251 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 11A Power dissipation: 85W Case: TO251 Gate-source voltage: ±30V On-state resistance: 405mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMP14N70C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 11A; 85W; TO251 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 700V Drain current: 11A Power dissipation: 85W Case: TO251 Gate-source voltage: ±30V On-state resistance: 530mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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WMP16N60C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 13A; 86W; TO251 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Power dissipation: 86W Case: TO251 Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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WMP16N60FD | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 86W; TO251 Type of transistor: N-MOSFET Technology: WMOS™ FD Polarisation: unipolar Drain-source voltage: 600V Drain current: 13A Power dissipation: 86W Case: TO251 Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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WMP16N65C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 86W; TO251 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 13A Power dissipation: 86W Case: TO251 Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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WMP16N65FD | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 13A; 86W; TO251 Type of transistor: N-MOSFET Technology: WMOS™ FD Polarisation: unipolar Drain-source voltage: 650V Drain current: 13A Power dissipation: 86W Case: TO251 Gate-source voltage: ±30V On-state resistance: 0.32Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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WMP20N60C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 15A; 86W; TO251 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 15A Power dissipation: 86W Case: TO251 Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: THT Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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WMP20N65C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 15A; 86W; TO251 Type of transistor: N-MOSFET Technology: WMOS™ C2 Power dissipation: 86W Case: TO251 Mounting: THT Kind of package: tube Drain current: 15A Kind of channel: enhancement Drain-source voltage: 650V Gate-source voltage: ±30V On-state resistance: 0.3Ω Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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WMPN40N50D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 40A; Idm: 160A; 462W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 500V Drain current: 40A Pulsed drain current: 160A Power dissipation: 462W Case: TO3PN Gate-source voltage: ±30V On-state resistance: 0.1Ω Mounting: THT Gate charge: 165.3nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 145 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMQ020N03LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 75A; Idm: 472A; 44.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 75A Power dissipation: 44.6W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Kind of channel: enhancement Pulsed drain current: 472A Gate charge: 33nC Kind of package: reel; tape |
auf Bestellung 65 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMQ040N03LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 27A; Idm: 170A; 24.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 27A Power dissipation: 24.5W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 6.2mΩ Mounting: SMD Kind of channel: enhancement Pulsed drain current: 170A Gate charge: 15.9nC Kind of package: reel; tape |
auf Bestellung 298 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMQ050N03LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 50A; Idm: 200A; 24W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 50A Power dissipation: 24W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 5.4mΩ Mounting: SMD Kind of channel: enhancement Pulsed drain current: 200A Gate charge: 16nC Kind of package: reel; tape |
auf Bestellung 342 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMQ050N04LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 36A; Idm: 182A; 33.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 36A Power dissipation: 33.8W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape Pulsed drain current: 182A Gate charge: 10.1nC |
auf Bestellung 108 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMQ060N04LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 35A; Idm: 200A; 30W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 35A Power dissipation: 30W Case: PDFN3030-8 On-state resistance: 7.8mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 200A Gate-source voltage: ±20V |
auf Bestellung 425 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMQ060N08LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 58A; Idm: 232A; 43W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 58A Pulsed drain current: 232A Power dissipation: 43W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 6.8mΩ Mounting: SMD Gate charge: 44nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 86 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMQ080N03LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 17.7A; Idm: 112A; 21.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 17.7A Power dissipation: 21.5W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Kind of channel: enhancement Pulsed drain current: 112A Gate charge: 7nC Kind of package: reel; tape |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMQ090NV6LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 44A; Idm: 176A; 29W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 65V Drain current: 44A Pulsed drain current: 176A Power dissipation: 29W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 21.7nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 402 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMQ10N10TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 40A; 20W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 10A Pulsed drain current: 40A Power dissipation: 20W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 90mΩ Mounting: SMD Gate charge: 20.6nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 195 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMQ119N10LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 151A; 42W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 42A Pulsed drain current: 151A Power dissipation: 42W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 68 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMQ12P10TS | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -12A; Idm: -48A; 30W Case: PDFN3030-8 Mounting: SMD Kind of package: reel; tape Power dissipation: 30W Gate charge: 65nC Polarisation: unipolar Drain current: -12A Kind of channel: enhancement Drain-source voltage: -100V Type of transistor: P-MOSFET Gate-source voltage: ±20V On-state resistance: 0.1Ω Pulsed drain current: -48A |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMQ15DN04TS | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 15A; Idm: 60A; 11.36W Mounting: SMD Pulsed drain current: 60A Power dissipation: 11.36W Gate charge: 10.4nC Polarisation: unipolar Drain current: 15A Kind of channel: enhancement Drain-source voltage: 40V Type of transistor: N-MOSFET x2 Gate-source voltage: ±20V Kind of package: reel; tape Case: PDFN3030-8 On-state resistance: 32mΩ |
auf Bestellung 378 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMQ175N10HG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 168A; 65.8W Mounting: SMD Polarisation: unipolar Drain current: 42A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: PDFN3030-8 On-state resistance: 18mΩ Pulsed drain current: 168A Power dissipation: 65.8W Gate charge: 17nC |
auf Bestellung 325 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMQ175N10LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 43A; Idm: 172A; 65.8W Mounting: SMD Polarisation: unipolar Drain current: 43A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: PDFN3030-8 On-state resistance: 17.5mΩ Pulsed drain current: 172A Power dissipation: 65.8W Gate charge: 22.7nC |
auf Bestellung 286 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMQ20N06TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 80A; 25W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 20A Power dissipation: 25W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Kind of channel: enhancement Pulsed drain current: 80A Gate charge: 22nC Kind of package: reel; tape |
auf Bestellung 117 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMQ25P06TS | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -25A; Idm: -100A; 30W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -25A Pulsed drain current: -100A Power dissipation: 30W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 23mΩ Mounting: SMD Gate charge: 59nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 259 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMQ26P02TS | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -26A; Idm: -104A; 20W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -26A Pulsed drain current: -104A Power dissipation: 20W Case: PDFN3030-8 Gate-source voltage: ±12V On-state resistance: 17mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMQ28N03T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 54A; 21W; PDFN3030-8 Mounting: SMD Pulsed drain current: 54A Power dissipation: 21W Gate charge: 7.3nC Polarisation: unipolar Drain current: 28A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: PDFN3030-8 On-state resistance: 18mΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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WMQ30DN04TS | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 28A; Idm: 112A; 18.4W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 28A Power dissipation: 18.4W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 14.5mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 112A Gate charge: 26nC |
auf Bestellung 389 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMQ30N02T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 75A; Idm: 300A; 37.8W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 75A Power dissipation: 37.8W Case: PDFN3030-8 Gate-source voltage: ±10V On-state resistance: 4mΩ Mounting: SMD Gate charge: 43.8nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 300A |
auf Bestellung 453 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMQ30N04TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 30A; Idm: 120A; 18.9W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 30A Pulsed drain current: 120A Power dissipation: 18.9W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 12mΩ Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 497 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMQ30N06TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 120A; 34.7W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 30A Pulsed drain current: 120A Power dissipation: 34.7W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Gate charge: 14.5nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 11 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMQ30P03T1 | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -30A; Idm: -120A; 29.7W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -30A Pulsed drain current: -120A Power dissipation: 29.7W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 483 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMQ30P04T1 | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -30A; Idm: -120A; 21W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -30A Pulsed drain current: -120A Power dissipation: 21W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 330 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMQ35P02TS | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -35A; Idm: -140A; 24W Case: PDFN3030-8 Power dissipation: 24W Gate charge: 19nC Polarisation: unipolar Drain current: -35A Kind of channel: enhancement Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±10V Kind of package: reel; tape On-state resistance: 13mΩ Mounting: SMD Pulsed drain current: -140A |
auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMQ40DN03T1 | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 40A; Idm: 160A; 28.4W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 160A Power dissipation: 28.4W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 9.5nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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WMQ40N03T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 160A; 59W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Power dissipation: 59W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Kind of channel: enhancement Pulsed drain current: 160A Gate charge: 20nC Kind of package: reel; tape |
auf Bestellung 141 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMQ46N03T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 46A; Idm: 184A; 30W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 46A Pulsed drain current: 184A Power dissipation: 30W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 411 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMQ50N04T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 200A; 22.7W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Power dissipation: 22.7W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 7.2mΩ Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape Pulsed drain current: 200A Gate charge: 36nC |
auf Bestellung 395 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMQ55N04T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 55A; Idm: 220A; 40W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 55A Pulsed drain current: 220A Power dissipation: 40W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 455 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMQ55P02T1 | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -55A; Idm: -220A; 39W Case: PDFN3030-8 Power dissipation: 39W Gate charge: 43nC Polarisation: unipolar Drain current: -55A Kind of channel: enhancement Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±10V Kind of package: reel; tape On-state resistance: 8.2mΩ Mounting: SMD Pulsed drain current: -220A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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WMQ80N03T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 320A; 44.6W Mounting: SMD Pulsed drain current: 320A Power dissipation: 44.6W Gate charge: 32nC Polarisation: unipolar Drain current: 80A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: PDFN3030-8 On-state resistance: 3.4mΩ |
auf Bestellung 2930 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMR050N03LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 68A; 2.4W; DFN2020-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 17A Power dissipation: 2.4W Case: DFN2020-6 Gate-source voltage: ±20V On-state resistance: 5.4mΩ Mounting: SMD Kind of channel: enhancement Pulsed drain current: 68A Gate charge: 16nC Kind of package: reel; tape |
auf Bestellung 328 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMR05N10TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 24A; 15W; DFN2020-6 Mounting: SMD Polarisation: unipolar Drain current: 5A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: DFN2020-6 On-state resistance: 0.26Ω Pulsed drain current: 24A Power dissipation: 15W Gate charge: 9.5nC |
auf Bestellung 990 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMR07N03T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7A; Idm: 35A; 1.6W; DFN2020-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 7A Pulsed drain current: 35A Power dissipation: 1.6W Case: DFN2020-6 On-state resistance: 18mΩ Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 990 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMR07N06TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7A; Idm: 28A; 2.7W; DFN2020-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7A Pulsed drain current: 28A Power dissipation: 2.7W Case: DFN2020-6 On-state resistance: 33mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 490 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMR07P03TS | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -28A; 1.8W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -7A Pulsed drain current: -28A Power dissipation: 1.8W Case: DFN2020-6 Gate-source voltage: ±20V On-state resistance: 23mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 490 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMR10N03T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 40A; 26.6W; DFN2020-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 8A Pulsed drain current: 40A Power dissipation: 26.6W Case: DFN2020-6 Gate-source voltage: ±20V On-state resistance: 16.5mΩ Mounting: SMD Gate charge: 9.9nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMR12P02T1 | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -11.5A; Idm: -46A; 3.1W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -11.5A Pulsed drain current: -46A Power dissipation: 3.1W Case: DFN2020-6 Gate-source voltage: ±12V On-state resistance: 17mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 975 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMR13N03T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 50A; 2.1W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 12.5A Pulsed drain current: 50A Power dissipation: 2.1W Case: DFN2020-6 Gate-source voltage: ±12V On-state resistance: 11mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 465 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMR140NV6LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 9A; Idm: 36A; 2.1W; DFN2020-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 65V Drain current: 9A Pulsed drain current: 36A Power dissipation: 2.1W Case: DFN2020-6 Gate-source voltage: ±20V On-state resistance: 14.5mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 400 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMR15N02T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 15A; Idm: 60A; 2.2W; DFN2020-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 15A Pulsed drain current: 60A Power dissipation: 2.2W Case: DFN2020-6 Gate-source voltage: ±10V On-state resistance: 6.5mΩ Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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WMR15N03TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 14.5A; Idm: 58A; 2.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 14.5A Pulsed drain current: 58A Power dissipation: 2.2W Case: DFN2020-6 Gate-source voltage: ±20V On-state resistance: 6.8mΩ Mounting: SMD Gate charge: 27.2nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 365 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
 |
WMS032N04LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 18A; Idm: 165A; 22W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 18A Pulsed drain current: 165A Power dissipation: 22W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 5.2mΩ Mounting: SMD Gate charge: 22.5nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 90 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMS048NV6LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 18.5A; Idm: 74A; 3.1W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 65V Drain current: 18.5A Pulsed drain current: 74A Power dissipation: 3.1W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 5.6mΩ Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 88 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMS04N10T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 16A; 3.1W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4A Pulsed drain current: 16A Power dissipation: 3.1W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMS04N10TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 3.1W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 3.5A Pulsed drain current: 14A Power dissipation: 3.1W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 4nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WMS04P06TS | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3.8A; SOP8 Mounting: SMD Case: SOP8 Polarisation: unipolar Drain current: -3.8A Kind of channel: enhancement Drain-source voltage: -60V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 0.105Ω |
auf Bestellung 990 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| WMP12N80M3 |
|
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 12A; 86W; TO251
Case: TO251
Mounting: THT
Kind of package: tube
Power dissipation: 86W
Polarisation: unipolar
Technology: WMOS™ M3
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 620mΩ
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 12A; 86W; TO251
Case: TO251
Mounting: THT
Kind of package: tube
Power dissipation: 86W
Polarisation: unipolar
Technology: WMOS™ M3
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 620mΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMP13N80M3 |
|
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 13A; 130W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Power dissipation: 130W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 13A; 130W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Power dissipation: 130W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMP14N60C2 |
|
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 11A; 85W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 85W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 11A; 85W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 85W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 178 Stücke:
Lieferzeit 14-21 Tag (e)
| WMP14N65C2 |
|
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 11A; 85W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 85W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 11A; 85W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 85W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 3 Stücke:
Lieferzeit 14-21 Tag (e)
| WMP14N70C2 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 11A; 85W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 11A
Power dissipation: 85W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 11A; 85W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 11A
Power dissipation: 85W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMP16N60C2 |
|
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 13A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 13A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMP16N60FD |
|
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMP16N65C2 |
|
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMP16N65FD |
|
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 13A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 13A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMP20N60C2 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 15A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 15A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMP20N65C2 |
|
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 15A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Power dissipation: 86W
Case: TO251
Mounting: THT
Kind of package: tube
Drain current: 15A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 15A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Power dissipation: 86W
Case: TO251
Mounting: THT
Kind of package: tube
Drain current: 15A
Kind of channel: enhancement
Drain-source voltage: 650V
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMPN40N50D1 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 40A; Idm: 160A; 462W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 462W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 165.3nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 40A; Idm: 160A; 462W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 462W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 165.3nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 145 Stücke:
Lieferzeit 14-21 Tag (e)
| WMQ020N03LG4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 75A; Idm: 472A; 44.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 75A
Power dissipation: 44.6W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 472A
Gate charge: 33nC
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 75A; Idm: 472A; 44.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 75A
Power dissipation: 44.6W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 472A
Gate charge: 33nC
Kind of package: reel; tape
auf Bestellung 65 Stücke:
Lieferzeit 14-21 Tag (e)
| WMQ040N03LG2 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 27A; Idm: 170A; 24.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 27A
Power dissipation: 24.5W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 170A
Gate charge: 15.9nC
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 27A; Idm: 170A; 24.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 27A
Power dissipation: 24.5W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 170A
Gate charge: 15.9nC
Kind of package: reel; tape
auf Bestellung 298 Stücke:
Lieferzeit 14-21 Tag (e)
| WMQ050N03LG4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; Idm: 200A; 24W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 24W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 200A
Gate charge: 16nC
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; Idm: 200A; 24W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Power dissipation: 24W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 200A
Gate charge: 16nC
Kind of package: reel; tape
auf Bestellung 342 Stücke:
Lieferzeit 14-21 Tag (e)
| WMQ050N04LG2 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 36A; Idm: 182A; 33.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 36A
Power dissipation: 33.8W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 182A
Gate charge: 10.1nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 36A; Idm: 182A; 33.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 36A
Power dissipation: 33.8W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 182A
Gate charge: 10.1nC
auf Bestellung 108 Stücke:
Lieferzeit 14-21 Tag (e)
| WMQ060N04LG2 |
|
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 35A; Idm: 200A; 30W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 35A
Power dissipation: 30W
Case: PDFN3030-8
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 200A
Gate-source voltage: ±20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 35A; Idm: 200A; 30W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 35A
Power dissipation: 30W
Case: PDFN3030-8
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 200A
Gate-source voltage: ±20V
auf Bestellung 425 Stücke:
Lieferzeit 14-21 Tag (e)
| WMQ060N08LG2 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 58A; Idm: 232A; 43W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 58A
Pulsed drain current: 232A
Power dissipation: 43W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 58A; Idm: 232A; 43W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 58A
Pulsed drain current: 232A
Power dissipation: 43W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 86 Stücke:
Lieferzeit 14-21 Tag (e)
| WMQ080N03LG2 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 17.7A; Idm: 112A; 21.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 17.7A
Power dissipation: 21.5W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 112A
Gate charge: 7nC
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 17.7A; Idm: 112A; 21.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 17.7A
Power dissipation: 21.5W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 112A
Gate charge: 7nC
Kind of package: reel; tape
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
| WMQ090NV6LG4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 44A; Idm: 176A; 29W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 44A
Pulsed drain current: 176A
Power dissipation: 29W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 21.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 44A; Idm: 176A; 29W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 44A
Pulsed drain current: 176A
Power dissipation: 29W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 21.7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 402 Stücke:
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| WMQ10N10TS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 40A; 20W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 20W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 20.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 40A; 20W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 20W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 20.6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 195 Stücke:
Lieferzeit 14-21 Tag (e)
| WMQ119N10LG2 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 151A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Pulsed drain current: 151A
Power dissipation: 42W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 151A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Pulsed drain current: 151A
Power dissipation: 42W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 68 Stücke:
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| WMQ12P10TS |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -12A; Idm: -48A; 30W
Case: PDFN3030-8
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 30W
Gate charge: 65nC
Polarisation: unipolar
Drain current: -12A
Kind of channel: enhancement
Drain-source voltage: -100V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Pulsed drain current: -48A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -12A; Idm: -48A; 30W
Case: PDFN3030-8
Mounting: SMD
Kind of package: reel; tape
Power dissipation: 30W
Gate charge: 65nC
Polarisation: unipolar
Drain current: -12A
Kind of channel: enhancement
Drain-source voltage: -100V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Pulsed drain current: -48A
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
| WMQ15DN04TS |
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 15A; Idm: 60A; 11.36W
Mounting: SMD
Pulsed drain current: 60A
Power dissipation: 11.36W
Gate charge: 10.4nC
Polarisation: unipolar
Drain current: 15A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PDFN3030-8
On-state resistance: 32mΩ
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 15A; Idm: 60A; 11.36W
Mounting: SMD
Pulsed drain current: 60A
Power dissipation: 11.36W
Gate charge: 10.4nC
Polarisation: unipolar
Drain current: 15A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PDFN3030-8
On-state resistance: 32mΩ
auf Bestellung 378 Stücke:
Lieferzeit 14-21 Tag (e)
| WMQ175N10HG4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 168A; 65.8W
Mounting: SMD
Polarisation: unipolar
Drain current: 42A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PDFN3030-8
On-state resistance: 18mΩ
Pulsed drain current: 168A
Power dissipation: 65.8W
Gate charge: 17nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 168A; 65.8W
Mounting: SMD
Polarisation: unipolar
Drain current: 42A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PDFN3030-8
On-state resistance: 18mΩ
Pulsed drain current: 168A
Power dissipation: 65.8W
Gate charge: 17nC
auf Bestellung 325 Stücke:
Lieferzeit 14-21 Tag (e)
| WMQ175N10LG4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; Idm: 172A; 65.8W
Mounting: SMD
Polarisation: unipolar
Drain current: 43A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PDFN3030-8
On-state resistance: 17.5mΩ
Pulsed drain current: 172A
Power dissipation: 65.8W
Gate charge: 22.7nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; Idm: 172A; 65.8W
Mounting: SMD
Polarisation: unipolar
Drain current: 43A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PDFN3030-8
On-state resistance: 17.5mΩ
Pulsed drain current: 172A
Power dissipation: 65.8W
Gate charge: 22.7nC
auf Bestellung 286 Stücke:
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| WMQ20N06TS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 80A; 25W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 25W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 80A
Gate charge: 22nC
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 80A; 25W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Power dissipation: 25W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 80A
Gate charge: 22nC
Kind of package: reel; tape
auf Bestellung 117 Stücke:
Lieferzeit 14-21 Tag (e)
| WMQ25P06TS |
|
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -25A; Idm: -100A; 30W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -25A
Pulsed drain current: -100A
Power dissipation: 30W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -25A; Idm: -100A; 30W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -25A
Pulsed drain current: -100A
Power dissipation: 30W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 259 Stücke:
Lieferzeit 14-21 Tag (e)
| WMQ26P02TS |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -26A; Idm: -104A; 20W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -26A
Pulsed drain current: -104A
Power dissipation: 20W
Case: PDFN3030-8
Gate-source voltage: ±12V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -26A; Idm: -104A; 20W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -26A
Pulsed drain current: -104A
Power dissipation: 20W
Case: PDFN3030-8
Gate-source voltage: ±12V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
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| WMQ28N03T1 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 54A; 21W; PDFN3030-8
Mounting: SMD
Pulsed drain current: 54A
Power dissipation: 21W
Gate charge: 7.3nC
Polarisation: unipolar
Drain current: 28A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PDFN3030-8
On-state resistance: 18mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 54A; 21W; PDFN3030-8
Mounting: SMD
Pulsed drain current: 54A
Power dissipation: 21W
Gate charge: 7.3nC
Polarisation: unipolar
Drain current: 28A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PDFN3030-8
On-state resistance: 18mΩ
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| WMQ30DN04TS |
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 28A; Idm: 112A; 18.4W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 28A
Power dissipation: 18.4W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 112A
Gate charge: 26nC
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 28A; Idm: 112A; 18.4W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 28A
Power dissipation: 18.4W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 112A
Gate charge: 26nC
auf Bestellung 389 Stücke:
Lieferzeit 14-21 Tag (e)
| WMQ30N02T1 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 75A; Idm: 300A; 37.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 75A
Power dissipation: 37.8W
Case: PDFN3030-8
Gate-source voltage: ±10V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 43.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 300A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 75A; Idm: 300A; 37.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 75A
Power dissipation: 37.8W
Case: PDFN3030-8
Gate-source voltage: ±10V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 43.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 300A
auf Bestellung 453 Stücke:
Lieferzeit 14-21 Tag (e)
| WMQ30N04TS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 30A; Idm: 120A; 18.9W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 18.9W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 30A; Idm: 120A; 18.9W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 18.9W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 497 Stücke:
Lieferzeit 14-21 Tag (e)
| WMQ30N06TS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 120A; 34.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 34.7W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 14.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 120A; 34.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 34.7W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 14.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 11 Stücke:
Lieferzeit 14-21 Tag (e)
| WMQ30P03T1 |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -30A; Idm: -120A; 29.7W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -30A
Pulsed drain current: -120A
Power dissipation: 29.7W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -30A; Idm: -120A; 29.7W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -30A
Pulsed drain current: -120A
Power dissipation: 29.7W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 483 Stücke:
Lieferzeit 14-21 Tag (e)
| WMQ30P04T1 |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -30A; Idm: -120A; 21W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -30A
Pulsed drain current: -120A
Power dissipation: 21W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -30A; Idm: -120A; 21W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -30A
Pulsed drain current: -120A
Power dissipation: 21W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 330 Stücke:
Lieferzeit 14-21 Tag (e)
| WMQ35P02TS |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -35A; Idm: -140A; 24W
Case: PDFN3030-8
Power dissipation: 24W
Gate charge: 19nC
Polarisation: unipolar
Drain current: -35A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±10V
Kind of package: reel; tape
On-state resistance: 13mΩ
Mounting: SMD
Pulsed drain current: -140A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -35A; Idm: -140A; 24W
Case: PDFN3030-8
Power dissipation: 24W
Gate charge: 19nC
Polarisation: unipolar
Drain current: -35A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±10V
Kind of package: reel; tape
On-state resistance: 13mΩ
Mounting: SMD
Pulsed drain current: -140A
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
| WMQ40DN03T1 |
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 40A; Idm: 160A; 28.4W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 28.4W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 40A; Idm: 160A; 28.4W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 28.4W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMQ40N03T1 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 160A; 59W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 59W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 160A
Gate charge: 20nC
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 160A; 59W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 59W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 160A
Gate charge: 20nC
Kind of package: reel; tape
auf Bestellung 141 Stücke:
Lieferzeit 14-21 Tag (e)
| WMQ46N03T1 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 46A; Idm: 184A; 30W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 30W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 46A; Idm: 184A; 30W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 30W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 411 Stücke:
Lieferzeit 14-21 Tag (e)
| WMQ50N04T1 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 200A; 22.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 22.7W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 200A
Gate charge: 36nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 200A; 22.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 22.7W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 200A
Gate charge: 36nC
auf Bestellung 395 Stücke:
Lieferzeit 14-21 Tag (e)
| WMQ55N04T1 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 55A; Idm: 220A; 40W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Pulsed drain current: 220A
Power dissipation: 40W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 55A; Idm: 220A; 40W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Pulsed drain current: 220A
Power dissipation: 40W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 455 Stücke:
Lieferzeit 14-21 Tag (e)
| WMQ55P02T1 |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -55A; Idm: -220A; 39W
Case: PDFN3030-8
Power dissipation: 39W
Gate charge: 43nC
Polarisation: unipolar
Drain current: -55A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±10V
Kind of package: reel; tape
On-state resistance: 8.2mΩ
Mounting: SMD
Pulsed drain current: -220A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -55A; Idm: -220A; 39W
Case: PDFN3030-8
Power dissipation: 39W
Gate charge: 43nC
Polarisation: unipolar
Drain current: -55A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±10V
Kind of package: reel; tape
On-state resistance: 8.2mΩ
Mounting: SMD
Pulsed drain current: -220A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMQ80N03T1 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 320A; 44.6W
Mounting: SMD
Pulsed drain current: 320A
Power dissipation: 44.6W
Gate charge: 32nC
Polarisation: unipolar
Drain current: 80A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PDFN3030-8
On-state resistance: 3.4mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 320A; 44.6W
Mounting: SMD
Pulsed drain current: 320A
Power dissipation: 44.6W
Gate charge: 32nC
Polarisation: unipolar
Drain current: 80A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PDFN3030-8
On-state resistance: 3.4mΩ
auf Bestellung 2930 Stücke:
Lieferzeit 14-21 Tag (e)
| WMR050N03LG4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 68A; 2.4W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 17A
Power dissipation: 2.4W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 68A
Gate charge: 16nC
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 68A; 2.4W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 17A
Power dissipation: 2.4W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 68A
Gate charge: 16nC
Kind of package: reel; tape
auf Bestellung 328 Stücke:
Lieferzeit 14-21 Tag (e)
| WMR05N10TS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 24A; 15W; DFN2020-6
Mounting: SMD
Polarisation: unipolar
Drain current: 5A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DFN2020-6
On-state resistance: 0.26Ω
Pulsed drain current: 24A
Power dissipation: 15W
Gate charge: 9.5nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 24A; 15W; DFN2020-6
Mounting: SMD
Polarisation: unipolar
Drain current: 5A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DFN2020-6
On-state resistance: 0.26Ω
Pulsed drain current: 24A
Power dissipation: 15W
Gate charge: 9.5nC
auf Bestellung 990 Stücke:
Lieferzeit 14-21 Tag (e)
| WMR07N03T1 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; Idm: 35A; 1.6W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Pulsed drain current: 35A
Power dissipation: 1.6W
Case: DFN2020-6
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; Idm: 35A; 1.6W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Pulsed drain current: 35A
Power dissipation: 1.6W
Case: DFN2020-6
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 990 Stücke:
Lieferzeit 14-21 Tag (e)
| WMR07N06TS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; Idm: 28A; 2.7W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 2.7W
Case: DFN2020-6
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; Idm: 28A; 2.7W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 2.7W
Case: DFN2020-6
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 490 Stücke:
Lieferzeit 14-21 Tag (e)
| WMR07P03TS |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -28A; 1.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 1.8W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -28A; 1.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 1.8W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 490 Stücke:
Lieferzeit 14-21 Tag (e)
| WMR10N03T1 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 40A; 26.6W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 40A
Power dissipation: 26.6W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 9.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 40A; 26.6W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 40A
Power dissipation: 26.6W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 9.9nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
| WMR12P02T1 |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -11.5A; Idm: -46A; 3.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -11.5A
Pulsed drain current: -46A
Power dissipation: 3.1W
Case: DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -11.5A; Idm: -46A; 3.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -11.5A
Pulsed drain current: -46A
Power dissipation: 3.1W
Case: DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 975 Stücke:
Lieferzeit 14-21 Tag (e)
| WMR13N03T1 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 50A; 2.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12.5A
Pulsed drain current: 50A
Power dissipation: 2.1W
Case: DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 50A; 2.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12.5A
Pulsed drain current: 50A
Power dissipation: 2.1W
Case: DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 465 Stücke:
Lieferzeit 14-21 Tag (e)
| WMR140NV6LG4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 9A; Idm: 36A; 2.1W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 2.1W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 9A; Idm: 36A; 2.1W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 2.1W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 400 Stücke:
Lieferzeit 14-21 Tag (e)
| WMR15N02T1 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 15A; Idm: 60A; 2.2W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 2.2W
Case: DFN2020-6
Gate-source voltage: ±10V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 15A; Idm: 60A; 2.2W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 2.2W
Case: DFN2020-6
Gate-source voltage: ±10V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMR15N03TS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14.5A; Idm: 58A; 2.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14.5A
Pulsed drain current: 58A
Power dissipation: 2.2W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Gate charge: 27.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14.5A; Idm: 58A; 2.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14.5A
Pulsed drain current: 58A
Power dissipation: 2.2W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Gate charge: 27.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 365 Stücke:
Lieferzeit 14-21 Tag (e)
| WMS032N04LG2 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 18A; Idm: 165A; 22W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 18A
Pulsed drain current: 165A
Power dissipation: 22W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 22.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 18A; Idm: 165A; 22W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 18A
Pulsed drain current: 165A
Power dissipation: 22W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 22.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
| WMS048NV6LG4 |
|
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 18.5A; Idm: 74A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 18.5A
Pulsed drain current: 74A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 18.5A; Idm: 74A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 18.5A
Pulsed drain current: 74A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)
| WMS04N10T1 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 16A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 16A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| WMS04N10TS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| WMS04P06TS |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.8A; SOP8
Mounting: SMD
Case: SOP8
Polarisation: unipolar
Drain current: -3.8A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 0.105Ω
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.8A; SOP8
Mounting: SMD
Case: SOP8
Polarisation: unipolar
Drain current: -3.8A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 0.105Ω
auf Bestellung 990 Stücke:
Lieferzeit 14-21 Tag (e)