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WMP10N70C2 WMP10N70C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDBBE6561F0E0C4&compId=WMx10N70C2.pdf?ci_sign=7d2406cf9166ebde6c96098c8529a41344f7a76e Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 7.5A; 57W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 57W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 920mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMP10N80M3 WMP10N80M3 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDBC9574E7020C4&compId=WMx10N80M3.pdf?ci_sign=c8761bd1e990f7fb61ff60a384d39e1833272d57 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 85W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.03Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMP119N10LG2 WMP119N10LG2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 55A; Idm: 220A; 65.8W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 55A
Pulsed drain current: 220A
Power dissipation: 65.8W
Case: TO251
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 34 Stücke:
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34+2.1 EUR
Mindestbestellmenge: 34
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WMP11N65C2 WMP11N65C2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 9A; 63W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9A
Power dissipation: 63W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 132 Stücke:
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73+0.99 EUR
102+0.71 EUR
117+0.61 EUR
130+0.55 EUR
132+0.54 EUR
Mindestbestellmenge: 73
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WMP11N70C2 WMP11N70C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DECF160F49D40C4&compId=WMx11N70C2.pdf?ci_sign=adcacd2d7a221b7d4d6b48749d2c9e22cbd48ef2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 8A; 63W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8A
Power dissipation: 63W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.68Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
auf Bestellung 367 Stücke:
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112+0.64 EUR
124+0.58 EUR
140+0.51 EUR
148+0.49 EUR
Mindestbestellmenge: 112
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WMP11N80M3 WMP11N80M3 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10.5A; 85W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10.5A
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 85W
Technology: WMOS™ M3
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WMP12N80M3 WMP12N80M3 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8EA009DBDD7D60C4&compId=WMx12N80M3.pdf?ci_sign=ced0b39155cd7d7f30e65f161df1e7a32305e372 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 12A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 12A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 620mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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WMP13N80M3 WMP13N80M3 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DED0A9903D3E0C4&compId=WMx13N80M3.pdf?ci_sign=a1f16a4f0a124d54dbcc308680bc341ce0957ba6 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 13A; 130W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Power dissipation: 130W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMP14N60C2 WMP14N60C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DECFA798FFCC0C4&compId=WMx14N60C2.pdf?ci_sign=b819e79c003991ca9b13e3ef08e17c81b6f7de85 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 11A; 85W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 85W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 357 Stücke:
Lieferzeit 14-21 Tag (e)
87+0.83 EUR
96+0.75 EUR
101+0.71 EUR
109+0.66 EUR
111+0.64 EUR
Mindestbestellmenge: 87
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WMP14N65C2 WMP14N65C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DED01C6FE2DC0C4&compId=WMx14N65C2.pdf?ci_sign=04f76e7286b0eab995cbfd1286f100007c00263c Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 11A; 85W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 85W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
auf Bestellung 5 Stücke:
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5+14.3 EUR
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WMP16N60C2 WMP16N60C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DED2364FEAD40C4&compId=WMx16N60C2.pdf?ci_sign=8a88713e21e0821e41674396660368ecad00022e Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 13A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMP16N60FD WMP16N60FD WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DED1A787C27A0C4&compId=WMx16N60FD.pdf?ci_sign=2f2e8100f4cf1e040bcbf9e2809c91c007c11a24 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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WMP16N65C2 WMP16N65C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DED5794077E20C4&compId=WMx16N65C2.pdf?ci_sign=207ac409f6744770aaf787fdcf75d89f44ca6587 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMP16N65FD WMP16N65FD WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DED71526EBA40C4&compId=WMx16N65FD.pdf?ci_sign=e2fdb4f482106f9ea7323924fd1a6918ee2d3acc Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 13A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMP16N70C2 WMP16N70C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DED5FE5EF42C0C4&compId=WMx16N70C2.pdf?ci_sign=291889488e8134b8db0acecced2c733b390f1a05 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 12A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMP20N60C2 WMP20N60C2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 15A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMP20N65C2 WMP20N65C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DED66D48183C0C4&compId=WMx20N65C2.pdf?ci_sign=84e2b548938fd273235f34b578349e9be942a374 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 15A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMPN40N50D1 WMPN40N50D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 40A; Idm: 160A; 462W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 462W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 165.3nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 291 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.66 EUR
22+3.3 EUR
26+2.8 EUR
28+2.65 EUR
120+2.62 EUR
Mindestbestellmenge: 20
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WMQ020N03LG4 WMQ020N03LG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 75A; Idm: 472A; 44.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 75A
Pulsed drain current: 472A
Power dissipation: 44.6W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 90 Stücke:
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69+1.04 EUR
90+0.8 EUR
Mindestbestellmenge: 69
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WMQ040N03LG2 WMQ040N03LG2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 27A; Idm: 170A; 24.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 27A
Pulsed drain current: 170A
Power dissipation: 24.5W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 15.9nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 335 Stücke:
Lieferzeit 14-21 Tag (e)
132+0.54 EUR
228+0.31 EUR
275+0.26 EUR
332+0.22 EUR
335+0.21 EUR
Mindestbestellmenge: 132
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WMQ050N03LG4 WMQ050N03LG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; Idm: 200A; 24W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 24W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 475 Stücke:
Lieferzeit 14-21 Tag (e)
136+0.53 EUR
278+0.26 EUR
334+0.21 EUR
424+0.17 EUR
447+0.16 EUR
Mindestbestellmenge: 136
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WMQ050N04LG2 WMQ050N04LG2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 36A; Idm: 182A; 33.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 36A
Pulsed drain current: 182A
Power dissipation: 33.8W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 10.1nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 180 Stücke:
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93+0.77 EUR
154+0.46 EUR
172+0.42 EUR
180+0.4 EUR
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WMQ060N04LG2 WMQ060N04LG2 WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1FD091D956DFC941E0DF&compId=WMQ060N04LG2.pdf?ci_sign=c3f975e8a22fa63c801b842dd47a636e121952fc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 35A; Idm: 200A; 30W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 35A
Pulsed drain current: 200A
Power dissipation: 30W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
136+0.53 EUR
224+0.32 EUR
248+0.29 EUR
293+0.24 EUR
311+0.23 EUR
Mindestbestellmenge: 136
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WMQ10N10TS WMQ10N10TS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 40A; 20W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 20W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 20.6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
107+0.67 EUR
265+0.27 EUR
317+0.23 EUR
397+0.18 EUR
421+0.17 EUR
Mindestbestellmenge: 107
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WMQ140DNV6LG4 WMQ140DNV6LG4 WAYON Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 65V; 30A; Idm: 120A; 23.6W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 23.6W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 495 Stücke:
Lieferzeit 14-21 Tag (e)
136+0.53 EUR
223+0.32 EUR
247+0.29 EUR
293+0.24 EUR
309+0.23 EUR
Mindestbestellmenge: 136
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WMQ140NV6LG4 WMQ140NV6LG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 33A; Idm: 132A; 25.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 33A
Pulsed drain current: 132A
Power dissipation: 25.5W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 480 Stücke:
Lieferzeit 14-21 Tag (e)
107+0.67 EUR
248+0.29 EUR
296+0.24 EUR
371+0.19 EUR
394+0.18 EUR
Mindestbestellmenge: 107
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WMQ175N10HG4 WMQ175N10HG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 168A; 65.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Pulsed drain current: 168A
Power dissipation: 65.8W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 495 Stücke:
Lieferzeit 14-21 Tag (e)
91+0.79 EUR
154+0.47 EUR
171+0.42 EUR
204+0.35 EUR
216+0.33 EUR
Mindestbestellmenge: 91
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WMQ20N06TS WMQ20N06TS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 80A; 25W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 25W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 150 Stücke:
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125+0.57 EUR
150+0.47 EUR
Mindestbestellmenge: 125
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WMQ26P02TS WMQ26P02TS WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -26A; Idm: -104A; 20W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -26A
Pulsed drain current: -104A
Power dissipation: 20W
Case: PDFN3030-8
Gate-source voltage: ±12V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
148+0.49 EUR
360+0.2 EUR
432+0.17 EUR
459+0.16 EUR
500+0.14 EUR
Mindestbestellmenge: 148
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WMQ30N02T1 WMQ30N02T1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 75A; Idm: 300A; 37.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 75A
Pulsed drain current: 300A
Power dissipation: 37.8W
Case: PDFN3030-8
Gate-source voltage: ±10V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 43.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
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132+0.54 EUR
300+0.24 EUR
360+0.2 EUR
379+0.19 EUR
451+0.16 EUR
477+0.15 EUR
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WMQ30N06TS WMQ30N06TS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 120A; 34.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 34.7W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 14.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 370 Stücke:
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298+0.24 EUR
358+0.2 EUR
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WMQ30P03T1 WMQ30P03T1 WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -30A; Idm: -120A; 29.7W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -30A
Pulsed drain current: -120A
Power dissipation: 29.7W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 485 Stücke:
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291+0.25 EUR
348+0.21 EUR
368+0.19 EUR
435+0.16 EUR
463+0.15 EUR
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WMQ35P02TS WMQ35P02TS WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -35A; Idm: -140A; 24W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -35A
Pulsed drain current: -140A
Power dissipation: 24W
Case: PDFN3030-8
Gate-source voltage: ±10V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
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368+0.19 EUR
443+0.16 EUR
472+0.15 EUR
500+0.14 EUR
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WMQ40N03T1 WMQ40N03T1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 160A; 59W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 59W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 160 Stücke:
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WMQ46N03T1 WMQ46N03T1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 46A; Idm: 184A; 30W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 30W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 415 Stücke:
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307+0.23 EUR
365+0.2 EUR
391+0.18 EUR
415+0.17 EUR
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WMQ50N04T1 WMQ50N04T1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 200A; 22.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 22.7W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 395 Stücke:
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220+0.33 EUR
261+0.27 EUR
334+0.21 EUR
353+0.2 EUR
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WMQ50P03T1 WMQ50P03T1 WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; Idm: -200A; 69W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -50A
Pulsed drain current: -200A
Power dissipation: 69W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2906 Stücke:
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237+0.3 EUR
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304+0.24 EUR
1000+0.23 EUR
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WMQ55N04T1 WMQ55N04T1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 55A; Idm: 220A; 40W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Pulsed drain current: 220A
Power dissipation: 40W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 485 Stücke:
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229+0.31 EUR
277+0.26 EUR
332+0.22 EUR
350+0.2 EUR
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WMR050N03LG4 WMR050N03LG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 68A; 2.4W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 17A
Pulsed drain current: 68A
Power dissipation: 2.4W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 328 Stücke:
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298+0.24 EUR
328+0.21 EUR
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WMR05N10TS WMR05N10TS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 24A; 15W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5A
Pulsed drain current: 24A
Power dissipation: 15W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 0.26Ω
Mounting: SMD
Gate charge: 9.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1000 Stücke:
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193+0.37 EUR
575+0.12 EUR
955+0.075 EUR
1000+0.072 EUR
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WMR07N03T1 WMR07N03T1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; Idm: 35A; 1.6W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Pulsed drain current: 35A
Power dissipation: 1.6W
Case: DFN2020-6
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1000 Stücke:
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139+0.51 EUR
374+0.19 EUR
532+0.13 EUR
596+0.12 EUR
715+0.1 EUR
758+0.094 EUR
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WMR07N06TS WMR07N06TS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; Idm: 28A; 2.7W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 2.7W
Case: DFN2020-6
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
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136+0.53 EUR
374+0.19 EUR
468+0.15 EUR
496+0.14 EUR
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WMR07P03TS WMR07P03TS WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -28A; 1.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 1.8W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
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120+0.6 EUR
332+0.22 EUR
414+0.17 EUR
439+0.16 EUR
500+0.14 EUR
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WMR10N03T1 WMR10N03T1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 40A; 26.6W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 40A
Power dissipation: 26.6W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 9.9nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
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132+0.54 EUR
325+0.22 EUR
388+0.18 EUR
410+0.17 EUR
486+0.15 EUR
500+0.14 EUR
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WMR12P02T1 WMR12P02T1 WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -11.5A; Idm: -46A; 3.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -11.5A
Pulsed drain current: -46A
Power dissipation: 3.1W
Case: DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1000 Stücke:
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132+0.54 EUR
353+0.2 EUR
509+0.14 EUR
564+0.13 EUR
664+0.11 EUR
702+0.1 EUR
Mindestbestellmenge: 132
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WMR13N03T1 WMR13N03T1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 50A; 2.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12.5A
Pulsed drain current: 50A
Power dissipation: 2.1W
Case: DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 485 Stücke:
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281+0.25 EUR
338+0.21 EUR
424+0.17 EUR
447+0.16 EUR
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WMR15N02T1 WMR15N02T1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 15A; Idm: 60A; 2.2W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 2.2W
Case: DFN2020-6
Gate-source voltage: ±10V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMR15N03TS WMR15N03TS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14.5A; Idm: 58A; 2.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14.5A
Pulsed drain current: 58A
Power dissipation: 2.2W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Gate charge: 27.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 370 Stücke:
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152+0.47 EUR
370+0.2 EUR
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WMS02P15TS WMS02P15TS WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -1.5A; Idm: -6A; 3.1W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 9.6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
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136+0.53 EUR
265+0.27 EUR
321+0.22 EUR
391+0.18 EUR
414+0.17 EUR
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WMS032N04LG2 WMS032N04LG2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 18A; Idm: 165A; 22W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 18A
Pulsed drain current: 165A
Power dissipation: 22W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 22.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 90 Stücke:
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69+1.04 EUR
90+0.8 EUR
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WMS04N10T1 WMS04N10T1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 16A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1000 Stücke:
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112+0.64 EUR
315+0.23 EUR
394+0.18 EUR
417+0.17 EUR
496+0.14 EUR
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WMS04N10TS WMS04N10TS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1000 Stücke:
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136+0.53 EUR
360+0.2 EUR
519+0.14 EUR
578+0.12 EUR
697+0.1 EUR
738+0.097 EUR
Mindestbestellmenge: 136
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WMS04P06TS WMS04P06TS WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.8A; SOP8
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: -60V
Drain current: -3.8A
On-state resistance: 0.105Ω
Type of transistor: P-MOSFET
auf Bestellung 990 Stücke:
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125+0.57 EUR
338+0.21 EUR
481+0.15 EUR
532+0.13 EUR
642+0.11 EUR
Mindestbestellmenge: 125
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WMS05P06T1 WMS05P06T1 WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.5A; Idm: -18A; 3.1W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.5A
Pulsed drain current: -18A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 489 Stücke:
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117+0.61 EUR
293+0.24 EUR
350+0.2 EUR
368+0.19 EUR
435+0.16 EUR
463+0.15 EUR
Mindestbestellmenge: 117
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WMS05P10TS WMS05P10TS WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.5A; Idm: -18A; 3.1W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.5A
Pulsed drain current: -18A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.57 EUR
212+0.34 EUR
237+0.3 EUR
288+0.25 EUR
304+0.24 EUR
Mindestbestellmenge: 125
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WMS06P04T1 WMS06P04T1 WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6A; Idm: -24A; 3W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -6A
Pulsed drain current: -24A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 59 Stücke:
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59+1.22 EUR
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WMS080N10LG2 WMS080N10LG2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 260A; 3W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 260A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 15.7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 100 Stücke:
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85+0.84 EUR
100+0.72 EUR
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WMS08DH04T1 WMS08DH04T1 WAYON Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 40/-40V; 7.5/-5.5A; 2.2W; SOP8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Power dissipation: 2.2W
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 24/47mΩ
Drain current: 7.5/-5.5A
Gate charge: 26/20nC
Gate-source voltage: ±20V
Drain-source voltage: 40/-40V
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
132+0.54 EUR
278+0.26 EUR
334+0.21 EUR
424+0.17 EUR
447+0.16 EUR
Mindestbestellmenge: 132
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WMS08DN06TS WMS08DN06TS WAYON Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 8A; Idm: 32A; 3.1W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 494 Stücke:
Lieferzeit 14-21 Tag (e)
103+0.7 EUR
212+0.34 EUR
254+0.28 EUR
323+0.22 EUR
341+0.21 EUR
Mindestbestellmenge: 103
Im Einkaufswagen  Stück im Wert von  UAH
WMS08P03T1 WMS08P03T1 WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8A; Idm: -40A; 2.7W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Pulsed drain current: -40A
Power dissipation: 2.7W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.57 EUR
332+0.22 EUR
472+0.15 EUR
527+0.14 EUR
625+0.11 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
WMP10N70C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDBBE6561F0E0C4&compId=WMx10N70C2.pdf?ci_sign=7d2406cf9166ebde6c96098c8529a41344f7a76e
WMP10N70C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 7.5A; 57W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.5A
Power dissipation: 57W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 920mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMP10N80M3 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDBC9574E7020C4&compId=WMx10N80M3.pdf?ci_sign=c8761bd1e990f7fb61ff60a384d39e1833272d57
WMP10N80M3
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 85W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.03Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMP119N10LG2
WMP119N10LG2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 55A; Idm: 220A; 65.8W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 55A
Pulsed drain current: 220A
Power dissipation: 65.8W
Case: TO251
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: THT
Gate charge: 20nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
34+2.1 EUR
Mindestbestellmenge: 34
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WMP11N65C2
WMP11N65C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 9A; 63W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9A
Power dissipation: 63W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 132 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
73+0.99 EUR
102+0.71 EUR
117+0.61 EUR
130+0.55 EUR
132+0.54 EUR
Mindestbestellmenge: 73
Im Einkaufswagen  Stück im Wert von  UAH
WMP11N70C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DECF160F49D40C4&compId=WMx11N70C2.pdf?ci_sign=adcacd2d7a221b7d4d6b48749d2c9e22cbd48ef2
WMP11N70C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 8A; 63W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8A
Power dissipation: 63W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.68Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
auf Bestellung 367 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
112+0.64 EUR
124+0.58 EUR
140+0.51 EUR
148+0.49 EUR
Mindestbestellmenge: 112
Im Einkaufswagen  Stück im Wert von  UAH
WMP11N80M3
WMP11N80M3
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10.5A; 85W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10.5A
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Power dissipation: 85W
Technology: WMOS™ M3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMP12N80M3 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8EA009DBDD7D60C4&compId=WMx12N80M3.pdf?ci_sign=ced0b39155cd7d7f30e65f161df1e7a32305e372
WMP12N80M3
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 12A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 12A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 620mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMP13N80M3 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DED0A9903D3E0C4&compId=WMx13N80M3.pdf?ci_sign=a1f16a4f0a124d54dbcc308680bc341ce0957ba6
WMP13N80M3
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 13A; 130W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Power dissipation: 130W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMP14N60C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DECFA798FFCC0C4&compId=WMx14N60C2.pdf?ci_sign=b819e79c003991ca9b13e3ef08e17c81b6f7de85
WMP14N60C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 11A; 85W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 85W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 357 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
87+0.83 EUR
96+0.75 EUR
101+0.71 EUR
109+0.66 EUR
111+0.64 EUR
Mindestbestellmenge: 87
Im Einkaufswagen  Stück im Wert von  UAH
WMP14N65C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DED01C6FE2DC0C4&compId=WMx14N65C2.pdf?ci_sign=04f76e7286b0eab995cbfd1286f100007c00263c
WMP14N65C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 11A; 85W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 85W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.3 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
WMP16N60C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DED2364FEAD40C4&compId=WMx16N60C2.pdf?ci_sign=8a88713e21e0821e41674396660368ecad00022e
WMP16N60C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 13A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMP16N60FD pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DED1A787C27A0C4&compId=WMx16N60FD.pdf?ci_sign=2f2e8100f4cf1e040bcbf9e2809c91c007c11a24
WMP16N60FD
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMP16N65C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DED5794077E20C4&compId=WMx16N65C2.pdf?ci_sign=207ac409f6744770aaf787fdcf75d89f44ca6587
WMP16N65C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMP16N65FD pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DED71526EBA40C4&compId=WMx16N65FD.pdf?ci_sign=e2fdb4f482106f9ea7323924fd1a6918ee2d3acc
WMP16N65FD
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 13A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMP16N70C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DED5FE5EF42C0C4&compId=WMx16N70C2.pdf?ci_sign=291889488e8134b8db0acecced2c733b390f1a05
WMP16N70C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 12A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMP20N60C2
WMP20N60C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 15A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMP20N65C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DED66D48183C0C4&compId=WMx20N65C2.pdf?ci_sign=84e2b548938fd273235f34b578349e9be942a374
WMP20N65C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 15A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMPN40N50D1
WMPN40N50D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 40A; Idm: 160A; 462W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 462W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 165.3nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 291 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.66 EUR
22+3.3 EUR
26+2.8 EUR
28+2.65 EUR
120+2.62 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
WMQ020N03LG4
WMQ020N03LG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 75A; Idm: 472A; 44.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 75A
Pulsed drain current: 472A
Power dissipation: 44.6W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
69+1.04 EUR
90+0.8 EUR
Mindestbestellmenge: 69
Im Einkaufswagen  Stück im Wert von  UAH
WMQ040N03LG2
WMQ040N03LG2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 27A; Idm: 170A; 24.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 27A
Pulsed drain current: 170A
Power dissipation: 24.5W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 15.9nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 335 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
132+0.54 EUR
228+0.31 EUR
275+0.26 EUR
332+0.22 EUR
335+0.21 EUR
Mindestbestellmenge: 132
Im Einkaufswagen  Stück im Wert von  UAH
WMQ050N03LG4
WMQ050N03LG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; Idm: 200A; 24W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 24W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 475 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
278+0.26 EUR
334+0.21 EUR
424+0.17 EUR
447+0.16 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
WMQ050N04LG2
WMQ050N04LG2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 36A; Idm: 182A; 33.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 36A
Pulsed drain current: 182A
Power dissipation: 33.8W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 10.1nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 180 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
93+0.77 EUR
154+0.46 EUR
172+0.42 EUR
180+0.4 EUR
Mindestbestellmenge: 93
Im Einkaufswagen  Stück im Wert von  UAH
WMQ060N04LG2 pVersion=0046&contRep=ZT&docId=005056AB281E1FD091D956DFC941E0DF&compId=WMQ060N04LG2.pdf?ci_sign=c3f975e8a22fa63c801b842dd47a636e121952fc
WMQ060N04LG2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 35A; Idm: 200A; 30W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 35A
Pulsed drain current: 200A
Power dissipation: 30W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
224+0.32 EUR
248+0.29 EUR
293+0.24 EUR
311+0.23 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
WMQ10N10TS
WMQ10N10TS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 40A; 20W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 20W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 20.6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
107+0.67 EUR
265+0.27 EUR
317+0.23 EUR
397+0.18 EUR
421+0.17 EUR
Mindestbestellmenge: 107
Im Einkaufswagen  Stück im Wert von  UAH
WMQ140DNV6LG4
WMQ140DNV6LG4
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 65V; 30A; Idm: 120A; 23.6W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 23.6W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 495 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
223+0.32 EUR
247+0.29 EUR
293+0.24 EUR
309+0.23 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
WMQ140NV6LG4
WMQ140NV6LG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 33A; Idm: 132A; 25.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 33A
Pulsed drain current: 132A
Power dissipation: 25.5W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 480 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
107+0.67 EUR
248+0.29 EUR
296+0.24 EUR
371+0.19 EUR
394+0.18 EUR
Mindestbestellmenge: 107
Im Einkaufswagen  Stück im Wert von  UAH
WMQ175N10HG4
WMQ175N10HG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 168A; 65.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Pulsed drain current: 168A
Power dissipation: 65.8W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 495 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
91+0.79 EUR
154+0.47 EUR
171+0.42 EUR
204+0.35 EUR
216+0.33 EUR
Mindestbestellmenge: 91
Im Einkaufswagen  Stück im Wert von  UAH
WMQ20N06TS
WMQ20N06TS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 80A; 25W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 25W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 150 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
150+0.47 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
WMQ26P02TS
WMQ26P02TS
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -26A; Idm: -104A; 20W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -26A
Pulsed drain current: -104A
Power dissipation: 20W
Case: PDFN3030-8
Gate-source voltage: ±12V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
148+0.49 EUR
360+0.2 EUR
432+0.17 EUR
459+0.16 EUR
500+0.14 EUR
Mindestbestellmenge: 148
Im Einkaufswagen  Stück im Wert von  UAH
WMQ30N02T1
WMQ30N02T1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 75A; Idm: 300A; 37.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 75A
Pulsed drain current: 300A
Power dissipation: 37.8W
Case: PDFN3030-8
Gate-source voltage: ±10V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 43.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
132+0.54 EUR
300+0.24 EUR
360+0.2 EUR
379+0.19 EUR
451+0.16 EUR
477+0.15 EUR
Mindestbestellmenge: 132
Im Einkaufswagen  Stück im Wert von  UAH
WMQ30N06TS
WMQ30N06TS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 30A; Idm: 120A; 34.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 30A
Pulsed drain current: 120A
Power dissipation: 34.7W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 14.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 370 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
132+0.54 EUR
298+0.24 EUR
358+0.2 EUR
Mindestbestellmenge: 132
Im Einkaufswagen  Stück im Wert von  UAH
WMQ30P03T1
WMQ30P03T1
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -30A; Idm: -120A; 29.7W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -30A
Pulsed drain current: -120A
Power dissipation: 29.7W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 485 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
117+0.61 EUR
291+0.25 EUR
348+0.21 EUR
368+0.19 EUR
435+0.16 EUR
463+0.15 EUR
Mindestbestellmenge: 117
Im Einkaufswagen  Stück im Wert von  UAH
WMQ35P02TS
WMQ35P02TS
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -35A; Idm: -140A; 24W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -35A
Pulsed drain current: -140A
Power dissipation: 24W
Case: PDFN3030-8
Gate-source voltage: ±10V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
148+0.49 EUR
368+0.19 EUR
443+0.16 EUR
472+0.15 EUR
500+0.14 EUR
Mindestbestellmenge: 148
Im Einkaufswagen  Stück im Wert von  UAH
WMQ40N03T1
WMQ40N03T1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 160A; 59W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 59W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 160 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
132+0.54 EUR
160+0.44 EUR
Mindestbestellmenge: 132
Im Einkaufswagen  Stück im Wert von  UAH
WMQ46N03T1
WMQ46N03T1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 46A; Idm: 184A; 30W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 30W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 415 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
122+0.59 EUR
307+0.23 EUR
365+0.2 EUR
391+0.18 EUR
415+0.17 EUR
Mindestbestellmenge: 122
Im Einkaufswagen  Stück im Wert von  UAH
WMQ50N04T1
WMQ50N04T1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 200A; 22.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 22.7W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 395 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
107+0.67 EUR
220+0.33 EUR
261+0.27 EUR
334+0.21 EUR
353+0.2 EUR
Mindestbestellmenge: 107
Im Einkaufswagen  Stück im Wert von  UAH
WMQ50P03T1
WMQ50P03T1
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -50A; Idm: -200A; 69W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -50A
Pulsed drain current: -200A
Power dissipation: 69W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 8.5mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2906 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
209+0.34 EUR
237+0.3 EUR
286+0.25 EUR
304+0.24 EUR
1000+0.23 EUR
Mindestbestellmenge: 209
Im Einkaufswagen  Stück im Wert von  UAH
WMQ55N04T1
WMQ55N04T1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 55A; Idm: 220A; 40W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Pulsed drain current: 220A
Power dissipation: 40W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 485 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
132+0.54 EUR
229+0.31 EUR
277+0.26 EUR
332+0.22 EUR
350+0.2 EUR
Mindestbestellmenge: 132
Im Einkaufswagen  Stück im Wert von  UAH
WMR050N03LG4
WMR050N03LG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 68A; 2.4W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 17A
Pulsed drain current: 68A
Power dissipation: 2.4W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 328 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
132+0.54 EUR
298+0.24 EUR
328+0.21 EUR
Mindestbestellmenge: 132
Im Einkaufswagen  Stück im Wert von  UAH
WMR05N10TS
WMR05N10TS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 24A; 15W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5A
Pulsed drain current: 24A
Power dissipation: 15W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 0.26Ω
Mounting: SMD
Gate charge: 9.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
193+0.37 EUR
575+0.12 EUR
955+0.075 EUR
1000+0.072 EUR
Mindestbestellmenge: 193
Im Einkaufswagen  Stück im Wert von  UAH
WMR07N03T1
WMR07N03T1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; Idm: 35A; 1.6W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Pulsed drain current: 35A
Power dissipation: 1.6W
Case: DFN2020-6
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
139+0.51 EUR
374+0.19 EUR
532+0.13 EUR
596+0.12 EUR
715+0.1 EUR
758+0.094 EUR
Mindestbestellmenge: 139
Im Einkaufswagen  Stück im Wert von  UAH
WMR07N06TS
WMR07N06TS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; Idm: 28A; 2.7W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 2.7W
Case: DFN2020-6
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
374+0.19 EUR
468+0.15 EUR
496+0.14 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
WMR07P03TS
WMR07P03TS
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -28A; 1.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 1.8W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
332+0.22 EUR
414+0.17 EUR
439+0.16 EUR
500+0.14 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
WMR10N03T1
WMR10N03T1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 40A; 26.6W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 40A
Power dissipation: 26.6W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 9.9nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
132+0.54 EUR
325+0.22 EUR
388+0.18 EUR
410+0.17 EUR
486+0.15 EUR
500+0.14 EUR
Mindestbestellmenge: 132
Im Einkaufswagen  Stück im Wert von  UAH
WMR12P02T1
WMR12P02T1
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -11.5A; Idm: -46A; 3.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -11.5A
Pulsed drain current: -46A
Power dissipation: 3.1W
Case: DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
132+0.54 EUR
353+0.2 EUR
509+0.14 EUR
564+0.13 EUR
664+0.11 EUR
702+0.1 EUR
Mindestbestellmenge: 132
Im Einkaufswagen  Stück im Wert von  UAH
WMR13N03T1
WMR13N03T1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 50A; 2.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12.5A
Pulsed drain current: 50A
Power dissipation: 2.1W
Case: DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 485 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
112+0.64 EUR
281+0.25 EUR
338+0.21 EUR
424+0.17 EUR
447+0.16 EUR
Mindestbestellmenge: 112
Im Einkaufswagen  Stück im Wert von  UAH
WMR15N02T1
WMR15N02T1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 15A; Idm: 60A; 2.2W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 2.2W
Case: DFN2020-6
Gate-source voltage: ±10V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMR15N03TS
WMR15N03TS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14.5A; Idm: 58A; 2.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14.5A
Pulsed drain current: 58A
Power dissipation: 2.2W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Gate charge: 27.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 370 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
152+0.47 EUR
370+0.2 EUR
Mindestbestellmenge: 152
Im Einkaufswagen  Stück im Wert von  UAH
WMS02P15TS
WMS02P15TS
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -1.5A; Idm: -6A; 3.1W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -150V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 0.85Ω
Mounting: SMD
Gate charge: 9.6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
265+0.27 EUR
321+0.22 EUR
391+0.18 EUR
414+0.17 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
WMS032N04LG2
WMS032N04LG2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 18A; Idm: 165A; 22W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 18A
Pulsed drain current: 165A
Power dissipation: 22W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 22.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 90 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
69+1.04 EUR
90+0.8 EUR
Mindestbestellmenge: 69
Im Einkaufswagen  Stück im Wert von  UAH
WMS04N10T1
WMS04N10T1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 16A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
112+0.64 EUR
315+0.23 EUR
394+0.18 EUR
417+0.17 EUR
496+0.14 EUR
Mindestbestellmenge: 112
Im Einkaufswagen  Stück im Wert von  UAH
WMS04N10TS
WMS04N10TS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
360+0.2 EUR
519+0.14 EUR
578+0.12 EUR
697+0.1 EUR
738+0.097 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
WMS04P06TS
WMS04P06TS
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.8A; SOP8
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Kind of channel: enhancement
Gate-source voltage: ±20V
Drain-source voltage: -60V
Drain current: -3.8A
On-state resistance: 0.105Ω
Type of transistor: P-MOSFET
auf Bestellung 990 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
338+0.21 EUR
481+0.15 EUR
532+0.13 EUR
642+0.11 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
WMS05P06T1
WMS05P06T1
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.5A; Idm: -18A; 3.1W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.5A
Pulsed drain current: -18A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 489 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
117+0.61 EUR
293+0.24 EUR
350+0.2 EUR
368+0.19 EUR
435+0.16 EUR
463+0.15 EUR
Mindestbestellmenge: 117
Im Einkaufswagen  Stück im Wert von  UAH
WMS05P10TS
WMS05P10TS
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -4.5A; Idm: -18A; 3.1W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -4.5A
Pulsed drain current: -18A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
212+0.34 EUR
237+0.3 EUR
288+0.25 EUR
304+0.24 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
WMS06P04T1
WMS06P04T1
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -6A; Idm: -24A; 3W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -6A
Pulsed drain current: -24A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 59 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
59+1.22 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
WMS080N10LG2
WMS080N10LG2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 260A; 3W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 260A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 15.7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
85+0.84 EUR
100+0.72 EUR
Mindestbestellmenge: 85
Im Einkaufswagen  Stück im Wert von  UAH
WMS08DH04T1
WMS08DH04T1
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 40/-40V; 7.5/-5.5A; 2.2W; SOP8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Power dissipation: 2.2W
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 24/47mΩ
Drain current: 7.5/-5.5A
Gate charge: 26/20nC
Gate-source voltage: ±20V
Drain-source voltage: 40/-40V
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
132+0.54 EUR
278+0.26 EUR
334+0.21 EUR
424+0.17 EUR
447+0.16 EUR
Mindestbestellmenge: 132
Im Einkaufswagen  Stück im Wert von  UAH
WMS08DN06TS
WMS08DN06TS
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 8A; Idm: 32A; 3.1W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 38mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 494 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
103+0.7 EUR
212+0.34 EUR
254+0.28 EUR
323+0.22 EUR
341+0.21 EUR
Mindestbestellmenge: 103
Im Einkaufswagen  Stück im Wert von  UAH
WMS08P03T1
WMS08P03T1
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8A; Idm: -40A; 2.7W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Pulsed drain current: -40A
Power dissipation: 2.7W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
332+0.22 EUR
472+0.15 EUR
527+0.14 EUR
625+0.11 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
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