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WMS14P03T1 WMS14P03T1 WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -14A; Idm: -53A; 3W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -14A
Pulsed drain current: -53A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 449 Stücke:
Lieferzeit 14-21 Tag (e)
132+0.54 EUR
227+0.32 EUR
275+0.26 EUR
338+0.21 EUR
358+0.2 EUR
Mindestbestellmenge: 132
Im Einkaufswagen  Stück im Wert von  UAH
WMS15N03T1 WMS15N03T1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 15A; Idm: 60A; 3W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
139+0.51 EUR
237+0.3 EUR
288+0.25 EUR
343+0.21 EUR
363+0.2 EUR
Mindestbestellmenge: 139
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WMS15P02T1 WMS15P02T1 WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -15A; Idm: -60A; 3.1W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -15A
Pulsed drain current: -60A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±10V
On-state resistance: 8.2mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.57 EUR
283+0.25 EUR
338+0.21 EUR
360+0.2 EUR
435+0.16 EUR
Mindestbestellmenge: 125
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WMS175N10HG4 WMS175N10HG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9A; Idm: 36A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 474 Stücke:
Lieferzeit 14-21 Tag (e)
120+0.6 EUR
210+0.34 EUR
256+0.28 EUR
317+0.23 EUR
334+0.21 EUR
Mindestbestellmenge: 120
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WMS175N10LG4 WMS175N10LG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.5A; Idm: 38A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.5A
Pulsed drain current: 38A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 22.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
122+0.59 EUR
206+0.35 EUR
229+0.31 EUR
283+0.25 EUR
300+0.24 EUR
Mindestbestellmenge: 122
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WMS240N10LG2 WMS240N10LG2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 32A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
139+0.51 EUR
240+0.3 EUR
291+0.25 EUR
343+0.21 EUR
360+0.2 EUR
Mindestbestellmenge: 139
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WMS690N15HG2 WMS690N15HG2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 3.1A; Idm: 20A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 3.1A
Power dissipation: 3.1W
Case: SOP8
On-state resistance: 69mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 20A
Gate charge: 7.5nC
Gate-source voltage: ±20V
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
73+0.99 EUR
100+0.72 EUR
Mindestbestellmenge: 73
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WMT04N10TS WMT04N10TS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
148+0.49 EUR
353+0.2 EUR
450+0.16 EUR
Mindestbestellmenge: 148
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WMT04N15TS WMT04N15TS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 4A; Idm: 16A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 490 Stücke:
Lieferzeit 14-21 Tag (e)
136+0.53 EUR
222+0.32 EUR
246+0.29 EUR
293+0.24 EUR
309+0.23 EUR
Mindestbestellmenge: 136
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WMT04P06TS WMT04P06TS WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.8A; Idm: -15.2A; 2.7W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.8A
Pulsed drain current: -15.2A
Power dissipation: 2.7W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.115Ω
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 465 Stücke:
Lieferzeit 14-21 Tag (e)
100+0.72 EUR
240+0.3 EUR
317+0.23 EUR
376+0.19 EUR
397+0.18 EUR
Mindestbestellmenge: 100
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WMT04P10TS WMT04P10TS WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -3.6A; Idm: -14.4A; 3.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -3.6A
Pulsed drain current: -14.4A
Power dissipation: 3.5W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 445 Stücke:
Lieferzeit 14-21 Tag (e)
132+0.54 EUR
250+0.29 EUR
278+0.26 EUR
343+0.21 EUR
363+0.2 EUR
Mindestbestellmenge: 132
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WMT05N10T1 WMT05N10T1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 20A; 4.2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 4.2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 20.6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 400 Stücke:
Lieferzeit 14-21 Tag (e)
100+0.72 EUR
237+0.3 EUR
313+0.23 EUR
382+0.19 EUR
400+0.17 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
WMT05N12TS WMT05N12TS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 4.6A; Idm: 18.4A; 3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 4.6A
Pulsed drain current: 18.4A
Power dissipation: 3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
122+0.59 EUR
232+0.31 EUR
258+0.28 EUR
317+0.23 EUR
336+0.21 EUR
Mindestbestellmenge: 122
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WMT07N03T1 WMT07N03T1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; Idm: 28A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 2.5W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 455 Stücke:
Lieferzeit 14-21 Tag (e)
117+0.61 EUR
315+0.23 EUR
451+0.16 EUR
Mindestbestellmenge: 117
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WMT07N06TS WMT07N06TS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; Idm: 28A; 2.7W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 2.7W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 466 Stücke:
Lieferzeit 14-21 Tag (e)
109+0.66 EUR
262+0.27 EUR
343+0.21 EUR
421+0.17 EUR
435+0.16 EUR
Mindestbestellmenge: 109
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WMT4N65D1B WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 2.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMU080N10HG2 WMU080N10HG2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 168A; 28.4W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Pulsed drain current: 168A
Power dissipation: 28.4W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: THT
Gate charge: 25.4nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
66+1.09 EUR
77+0.94 EUR
95+0.76 EUR
100+0.72 EUR
Mindestbestellmenge: 66
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WMX3N150D1 WMX3N150D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 90W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 90W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 5.7Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 152 Stücke:
Lieferzeit 14-21 Tag (e)
44+1.66 EUR
48+1.5 EUR
57+1.27 EUR
60+1.2 EUR
120+1.19 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
WMX4N150D1 WMX4N150D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 4A; Idm: 16A; 90W
Mounting: THT
Drain current: 4A
On-state resistance: 5.4Ω
Type of transistor: N-MOSFET
Power dissipation: 90W
Polarisation: unipolar
Kind of package: tube
Gate charge: 41nC
Technology: WMOS™ D1
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 16A
Case: TO3PF
Drain-source voltage: 1.5kV
auf Bestellung 233 Stücke:
Lieferzeit 14-21 Tag (e)
43+1.67 EUR
48+1.52 EUR
57+1.27 EUR
60+1.2 EUR
120+1.19 EUR
Mindestbestellmenge: 43
Im Einkaufswagen  Stück im Wert von  UAH
WMZ13N65EM WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 6.5A; Idm: 35A; 85W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.5A
Pulsed drain current: 35A
Power dissipation: 85W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 20.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMZ26N65C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMZ36N65C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMZ53N60F2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 26A; Idm: 90A; 280W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 280W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WS05-4RUL WAYON Transient Voltage Suppressor; protects 4 I/O lines; 400W; 20A; 5V; -55°C~125°C; Odpowiednik: WWS05-4RUL; WS05-4RUL SOT23-6 UIWS05-4rul
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
40+0.86 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC004065NPD WAYON Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SiC; SMD; 650V; 4A; tape
Type of diode: Schottky rectifying
Case: DFN5x6
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 1.38V
Leakage current: 0.8µA
Max. forward impulse current: 30A
Kind of package: tape
Produkt ist nicht verfügbar
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WSRSIC005120NNI WSRSIC005120NNI WAYON Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220ACIns; Ir: 1uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: TO220ACIns
Max. forward voltage: 1.4V
Max. forward impulse current: 43A
Leakage current: 1µA
Kind of package: tube
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.15 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC008065NNI WSRSIC008065NNI WAYON Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ACIns; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ACIns
Max. forward voltage: 1.38V
Max. forward impulse current: 50A
Leakage current: 1.2µA
Kind of package: tube
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
32+2.25 EUR
43+1.7 EUR
45+1.6 EUR
Mindestbestellmenge: 32
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WSRSIC008065NPC WSRSIC008065NPC WAYON Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ir: 1.2uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.38V
Max. forward impulse current: 65A
Leakage current: 1.2µA
Kind of package: tube
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
46+1.56 EUR
Mindestbestellmenge: 46
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WSRSIC008065NPD WAYON Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SiC; SMD; 650V; 8A; tape
Type of diode: Schottky rectifying
Case: DFN5x6
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 1.38V
Leakage current: 1.2µA
Max. forward impulse current: 45A
Kind of package: tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC008065NPF WSRSIC008065NPF WAYON Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220FP-2; Ir: 1.2uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.38V
Max. forward impulse current: 50A
Leakage current: 1.2µA
Kind of package: tube
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.76 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC010065NNI WSRSIC010065NNI WAYON Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ACIns; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220ACIns
Max. forward voltage: 1.38V
Max. forward impulse current: 70A
Leakage current: 1.5µA
Kind of package: tube
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.33 EUR
30+2.45 EUR
32+2.3 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC010065NPC WSRSIC010065NPC WAYON Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; Ir: 1.5uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.38V
Max. forward impulse current: 75A
Leakage current: 1.5µA
Kind of package: tube
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
36+1.99 EUR
39+1.83 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC010065NPF WSRSIC010065NPF WAYON Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.38V
Max. forward impulse current: 70A
Leakage current: 1.5µA
Kind of package: tube
auf Bestellung 49 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.12 EUR
32+2.27 EUR
34+2.14 EUR
Mindestbestellmenge: 23
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WSRSIC010065NPM WAYON Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 10A; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.38V
Max. forward impulse current: 80A
Leakage current: 1.5µA
Kind of package: tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC010065NPO WAYON Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 10A; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.38V
Max. forward impulse current: 70A
Leakage current: 1.5µA
Kind of package: tape
Produkt ist nicht verfügbar
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WSRSIC010120NNI WSRSIC010120NNI WAYON Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220ACIns; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220ACIns
Max. forward voltage: 1.4V
Max. forward impulse current: 95A
Leakage current: 1µA
Kind of package: tube
Produkt ist nicht verfügbar
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WSRSIC010120NP4 WSRSIC010120NP4 WAYON Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; Ir: 5uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.4V
Max. forward impulse current: 95A
Leakage current: 5µA
Kind of package: tube
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
20+3.68 EUR
25+2.86 EUR
Mindestbestellmenge: 20
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WSRSIC010120NPM WAYON Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 1.2kV; 10A; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.4V
Max. forward impulse current: 95A
Leakage current: 5µA
Kind of package: tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC010120NPO WAYON Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 10A; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.4V
Max. forward impulse current: 95A
Leakage current: 5µA
Kind of package: tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC015065NPC WSRSIC015065NPC WAYON Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 5uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.38V
Max. forward impulse current: 95A
Leakage current: 5µA
Kind of package: tube
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
30+2.4 EUR
35+2.04 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC030065NPS WSRSIC030065NPS WAYON Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO247-3; Ir: 2uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Case: TO247-3
Max. forward voltage: 1.38V
Max. forward impulse current: 220A
Leakage current: 2µA
Kind of package: tube
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
9+7.98 EUR
13+5.53 EUR
Mindestbestellmenge: 9
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WMS14P03T1
WMS14P03T1
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -14A; Idm: -53A; 3W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -14A
Pulsed drain current: -53A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 449 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
132+0.54 EUR
227+0.32 EUR
275+0.26 EUR
338+0.21 EUR
358+0.2 EUR
Mindestbestellmenge: 132
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WMS15N03T1
WMS15N03T1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 15A; Idm: 60A; 3W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
139+0.51 EUR
237+0.3 EUR
288+0.25 EUR
343+0.21 EUR
363+0.2 EUR
Mindestbestellmenge: 139
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WMS15P02T1
WMS15P02T1
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -15A; Idm: -60A; 3.1W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -15A
Pulsed drain current: -60A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±10V
On-state resistance: 8.2mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
283+0.25 EUR
338+0.21 EUR
360+0.2 EUR
435+0.16 EUR
Mindestbestellmenge: 125
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WMS175N10HG4
WMS175N10HG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9A; Idm: 36A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 474 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
210+0.34 EUR
256+0.28 EUR
317+0.23 EUR
334+0.21 EUR
Mindestbestellmenge: 120
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WMS175N10LG4
WMS175N10LG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.5A; Idm: 38A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.5A
Pulsed drain current: 38A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 22.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
122+0.59 EUR
206+0.35 EUR
229+0.31 EUR
283+0.25 EUR
300+0.24 EUR
Mindestbestellmenge: 122
Im Einkaufswagen  Stück im Wert von  UAH
WMS240N10LG2
WMS240N10LG2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 32A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
139+0.51 EUR
240+0.3 EUR
291+0.25 EUR
343+0.21 EUR
360+0.2 EUR
Mindestbestellmenge: 139
Im Einkaufswagen  Stück im Wert von  UAH
WMS690N15HG2
WMS690N15HG2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 3.1A; Idm: 20A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 3.1A
Power dissipation: 3.1W
Case: SOP8
On-state resistance: 69mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 20A
Gate charge: 7.5nC
Gate-source voltage: ±20V
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
73+0.99 EUR
100+0.72 EUR
Mindestbestellmenge: 73
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WMT04N10TS
WMT04N10TS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
148+0.49 EUR
353+0.2 EUR
450+0.16 EUR
Mindestbestellmenge: 148
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WMT04N15TS
WMT04N15TS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 4A; Idm: 16A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 25nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 490 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
222+0.32 EUR
246+0.29 EUR
293+0.24 EUR
309+0.23 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
WMT04P06TS
WMT04P06TS
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.8A; Idm: -15.2A; 2.7W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.8A
Pulsed drain current: -15.2A
Power dissipation: 2.7W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.115Ω
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 465 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.72 EUR
240+0.3 EUR
317+0.23 EUR
376+0.19 EUR
397+0.18 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
WMT04P10TS
WMT04P10TS
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -3.6A; Idm: -14.4A; 3.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -3.6A
Pulsed drain current: -14.4A
Power dissipation: 3.5W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 445 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
132+0.54 EUR
250+0.29 EUR
278+0.26 EUR
343+0.21 EUR
363+0.2 EUR
Mindestbestellmenge: 132
Im Einkaufswagen  Stück im Wert von  UAH
WMT05N10T1
WMT05N10T1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 20A; 4.2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 4.2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 20.6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 400 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
100+0.72 EUR
237+0.3 EUR
313+0.23 EUR
382+0.19 EUR
400+0.17 EUR
Mindestbestellmenge: 100
Im Einkaufswagen  Stück im Wert von  UAH
WMT05N12TS
WMT05N12TS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 4.6A; Idm: 18.4A; 3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 4.6A
Pulsed drain current: 18.4A
Power dissipation: 3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
122+0.59 EUR
232+0.31 EUR
258+0.28 EUR
317+0.23 EUR
336+0.21 EUR
Mindestbestellmenge: 122
Im Einkaufswagen  Stück im Wert von  UAH
WMT07N03T1
WMT07N03T1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; Idm: 28A; 2.5W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 2.5W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 36mΩ
Mounting: SMD
Gate charge: 9nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 455 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
117+0.61 EUR
315+0.23 EUR
451+0.16 EUR
Mindestbestellmenge: 117
Im Einkaufswagen  Stück im Wert von  UAH
WMT07N06TS
WMT07N06TS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; Idm: 28A; 2.7W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 2.7W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 466 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
109+0.66 EUR
262+0.27 EUR
343+0.21 EUR
421+0.17 EUR
435+0.16 EUR
Mindestbestellmenge: 109
Im Einkaufswagen  Stück im Wert von  UAH
WMT4N65D1B
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 2.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMU080N10HG2
WMU080N10HG2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 168A; 28.4W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Pulsed drain current: 168A
Power dissipation: 28.4W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: THT
Gate charge: 25.4nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
66+1.09 EUR
77+0.94 EUR
95+0.76 EUR
100+0.72 EUR
Mindestbestellmenge: 66
Im Einkaufswagen  Stück im Wert von  UAH
WMX3N150D1
WMX3N150D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 90W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 90W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 5.7Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 152 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.66 EUR
48+1.5 EUR
57+1.27 EUR
60+1.2 EUR
120+1.19 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
WMX4N150D1
WMX4N150D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 4A; Idm: 16A; 90W
Mounting: THT
Drain current: 4A
On-state resistance: 5.4Ω
Type of transistor: N-MOSFET
Power dissipation: 90W
Polarisation: unipolar
Kind of package: tube
Gate charge: 41nC
Technology: WMOS™ D1
Kind of channel: enhancement
Gate-source voltage: ±30V
Pulsed drain current: 16A
Case: TO3PF
Drain-source voltage: 1.5kV
auf Bestellung 233 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
43+1.67 EUR
48+1.52 EUR
57+1.27 EUR
60+1.2 EUR
120+1.19 EUR
Mindestbestellmenge: 43
Im Einkaufswagen  Stück im Wert von  UAH
WMZ13N65EM
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 6.5A; Idm: 35A; 85W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.5A
Pulsed drain current: 35A
Power dissipation: 85W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 20.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMZ26N65C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMZ36N65C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMZ53N60F2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 26A; Idm: 90A; 280W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 280W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WS05-4RUL
Hersteller: WAYON
Transient Voltage Suppressor; protects 4 I/O lines; 400W; 20A; 5V; -55°C~125°C; Odpowiednik: WWS05-4RUL; WS05-4RUL SOT23-6 UIWS05-4rul
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
40+0.86 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC004065NPD
Hersteller: WAYON
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SiC; SMD; 650V; 4A; tape
Type of diode: Schottky rectifying
Case: DFN5x6
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 1.38V
Leakage current: 0.8µA
Max. forward impulse current: 30A
Kind of package: tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC005120NNI
WSRSIC005120NNI
Hersteller: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220ACIns; Ir: 1uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: TO220ACIns
Max. forward voltage: 1.4V
Max. forward impulse current: 43A
Leakage current: 1µA
Kind of package: tube
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.15 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC008065NNI
WSRSIC008065NNI
Hersteller: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ACIns; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ACIns
Max. forward voltage: 1.38V
Max. forward impulse current: 50A
Leakage current: 1.2µA
Kind of package: tube
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.25 EUR
43+1.7 EUR
45+1.6 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC008065NPC
WSRSIC008065NPC
Hersteller: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ir: 1.2uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.38V
Max. forward impulse current: 65A
Leakage current: 1.2µA
Kind of package: tube
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
46+1.56 EUR
Mindestbestellmenge: 46
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WSRSIC008065NPD
Hersteller: WAYON
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SiC; SMD; 650V; 8A; tape
Type of diode: Schottky rectifying
Case: DFN5x6
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 1.38V
Leakage current: 1.2µA
Max. forward impulse current: 45A
Kind of package: tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC008065NPF
WSRSIC008065NPF
Hersteller: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220FP-2; Ir: 1.2uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.38V
Max. forward impulse current: 50A
Leakage current: 1.2µA
Kind of package: tube
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.76 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC010065NNI
WSRSIC010065NNI
Hersteller: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ACIns; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220ACIns
Max. forward voltage: 1.38V
Max. forward impulse current: 70A
Leakage current: 1.5µA
Kind of package: tube
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.33 EUR
30+2.45 EUR
32+2.3 EUR
Mindestbestellmenge: 22
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC010065NPC
WSRSIC010065NPC
Hersteller: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; Ir: 1.5uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.38V
Max. forward impulse current: 75A
Leakage current: 1.5µA
Kind of package: tube
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
36+1.99 EUR
39+1.83 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC010065NPF
WSRSIC010065NPF
Hersteller: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.38V
Max. forward impulse current: 70A
Leakage current: 1.5µA
Kind of package: tube
auf Bestellung 49 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.12 EUR
32+2.27 EUR
34+2.14 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC010065NPM
Hersteller: WAYON
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 10A; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.38V
Max. forward impulse current: 80A
Leakage current: 1.5µA
Kind of package: tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC010065NPO
Hersteller: WAYON
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 10A; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.38V
Max. forward impulse current: 70A
Leakage current: 1.5µA
Kind of package: tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC010120NNI
WSRSIC010120NNI
Hersteller: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO220ACIns; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220ACIns
Max. forward voltage: 1.4V
Max. forward impulse current: 95A
Leakage current: 1µA
Kind of package: tube
Produkt ist nicht verfügbar
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WSRSIC010120NP4
WSRSIC010120NP4
Hersteller: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; Ir: 5uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.4V
Max. forward impulse current: 95A
Leakage current: 5µA
Kind of package: tube
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
20+3.68 EUR
25+2.86 EUR
Mindestbestellmenge: 20
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC010120NPM
Hersteller: WAYON
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 1.2kV; 10A; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: D2PAK
Max. forward voltage: 1.4V
Max. forward impulse current: 95A
Leakage current: 5µA
Kind of package: tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC010120NPO
Hersteller: WAYON
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 10A; tape
Type of diode: Schottky rectifying
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: DPAK
Max. forward voltage: 1.4V
Max. forward impulse current: 95A
Leakage current: 5µA
Kind of package: tape
Produkt ist nicht verfügbar
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WSRSIC015065NPC
WSRSIC015065NPC
Hersteller: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 5uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.38V
Max. forward impulse current: 95A
Leakage current: 5µA
Kind of package: tube
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.4 EUR
35+2.04 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC030065NPS
WSRSIC030065NPS
Hersteller: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO247-3; Ir: 2uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Case: TO247-3
Max. forward voltage: 1.38V
Max. forward impulse current: 220A
Leakage current: 2µA
Kind of package: tube
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+7.98 EUR
13+5.53 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
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