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WMO14N60C2 WMO14N60C2 WAYON WMx14N60C2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 11A; 85W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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162+0.52 EUR
167+0.51 EUR
173+0.49 EUR
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WMO14N60C4 WMO14N60C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 6A; Idm: 26A; 85W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 26A
Gate charge: 13nC
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WMO14N65C2 WMO14N65C2 WAYON WMx14N65C2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 11A; 85W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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WMO14N65C4 WMO14N65C4 WAYON WMx14N65C4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 6A; Idm: 26A; 85W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 26A
Power dissipation: 85W
Gate charge: 13nC
Technology: WMOS™ C4
Produkt ist nicht verfügbar
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WMO15N10T1 WMO15N10T1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 60A; 41.7W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 41.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 20.6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 822 Stücke:
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107+0.8 EUR
260+0.33 EUR
343+0.25 EUR
388+0.21 EUR
432+0.2 EUR
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WMO15N60C4 WMO15N60C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 7.8A; Idm: 26A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 26A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 14.6nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMO15N65C4 WMO15N65C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 7.8A; Idm: 26A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.8A
Pulsed drain current: 26A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 14.6nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMO15N65F2 WMO15N65F2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 7.8A; Idm: 26A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.8A
Pulsed drain current: 26A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 335mΩ
Mounting: SMD
Gate charge: 14.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMO16N60FD WMO16N60FD WAYON WMx16N60FD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 86W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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WMO16N65C2 WMO16N65C2 WAYON WMx16N65C2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 86W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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WMO16N65FD WMO16N65FD WAYON WMx16N65FD.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 13A; 86W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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WMO16N65SR WMO16N65SR WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 8.4A; Idm: 35A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.4A
Pulsed drain current: 35A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: SMD
Gate charge: 19.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMO175N10HG4 WMO175N10HG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 180A; 67.5W; TO252
Pulsed drain current: 180A
Power dissipation: 67.5W
Gate charge: 17nC
Polarisation: unipolar
Drain current: 45A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: TO252
On-state resistance: 17.5mΩ
Mounting: SMD
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WMO175N10LG4 WMO175N10LG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 180A; 67.5W; TO252
Pulsed drain current: 180A
Power dissipation: 67.5W
Gate charge: 22.5nC
Polarisation: unipolar
Drain current: 45A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: TO252
On-state resistance: 17mΩ
Mounting: SMD
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WMO17N25JN WMO17N25JN WAYON WMx17N25JN.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 6.5A; Idm: 33A; 36W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 6.5A
Pulsed drain current: 33A
Power dissipation: 36W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 7.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 98ns
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WMO18N20JN WAYON WMx18N20JN.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 7A; Idm: 39A; 36W; TO252; 80ns
Case: TO252
Mounting: SMD
Reverse recovery time: 80ns
On-state resistance: 135mΩ
Drain current: 7A
Gate-source voltage: ±20V
Power dissipation: 36W
Pulsed drain current: 39A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 7.2nC
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WMO18N20T2 WMO18N20T2 WAYON WMO18N20T2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 83W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Pulsed drain current: 72A
Power dissipation: 83W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 11nC
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WMO18N50C4 WMO18N50C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 10A; Idm: 50A; 75W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10A
Pulsed drain current: 50A
Power dissipation: 75W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMO18N65EM WMO18N65EM WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 8.6A; Idm: 43A; 125W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.6A
Pulsed drain current: 43A
Power dissipation: 125W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMO18P10TS WMO18P10TS WAYON WMO18P10TS.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -18A; Idm: -72A; 70W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Pulsed drain current: -72A
Power dissipation: 70W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMO190N03TS WMO190N03TS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 190A; Idm: 760A; 166.7W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 190A
Pulsed drain current: 760A
Power dissipation: 166.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2440 Stücke:
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100+0.86 EUR
168+0.51 EUR
187+0.45 EUR
211+0.4 EUR
250+0.36 EUR
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WMO20N65EM WMO20N65EM WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO252
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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WMO20P15TS WMO20P15TS WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -20A; Idm: -80A; 147W; TO252
On-state resistance: 0.175Ω
Mounting: SMD
Pulsed drain current: -80A
Power dissipation: 147W
Gate charge: 84nC
Polarisation: unipolar
Drain current: -20A
Kind of channel: enhancement
Drain-source voltage: -150V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: TO252
auf Bestellung 135 Stücke:
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79+1.09 EUR
129+0.65 EUR
135+0.63 EUR
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WMO22N50C4 WMO22N50C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 11A; Idm: 60A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Pulsed drain current: 60A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 14.6nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMO240N10LG2 WMO240N10LG2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; Idm: 144A; 56.8W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Pulsed drain current: 144A
Power dissipation: 56.8W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 15.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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261+0.32 EUR
296+0.29 EUR
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WMO25N06TS WMO25N06TS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 41.7W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 41.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
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291+0.3 EUR
385+0.23 EUR
432+0.2 EUR
486+0.18 EUR
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WMO25N50C4 WMO25N50C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 13A; Idm: 65A; 135W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 135W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMO25P03TS WMO25P03TS WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -25A; Idm: -100A; 22.5W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -25A
Pulsed drain current: -100A
Power dissipation: 22.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMO25P06T1 WMO25P06T1 WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -25A; Idm: -100A; 44.6W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -25A
Pulsed drain current: -100A
Power dissipation: 44.6W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
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125+0.68 EUR
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268+0.32 EUR
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WMO26N60C4 WMO26N60C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMO26N65C4 WMO26N65C4 WAYON WMx26N65C4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMO26N65F2 WMO26N65F2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMO30P03TS WMO30P03TS WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -30A; Idm: -120A; 24W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -30A
Pulsed drain current: -120A
Power dissipation: 24W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 15.5mΩ
Mounting: SMD
Gate charge: 20.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 349 Stücke:
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100+0.86 EUR
241+0.36 EUR
321+0.26 EUR
349+0.24 EUR
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WMO30P10TS WMO30P10TS WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -35A; Idm: -140A; 119W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -35A
Pulsed drain current: -140A
Power dissipation: 119W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 115nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMO35N06T1 WMO35N06T1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35A; Idm: 140A; 44.6W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Pulsed drain current: 140A
Power dissipation: 44.6W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 14.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMO40N04TS WMO40N04TS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 160A; 33W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 33W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 12.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 160A
Gate charge: 22.2nC
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WMO40N20JN WMO40N20JN WAYON WMx40N20JN.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 21A; Idm: 110A; 89W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 21A
Pulsed drain current: 110A
Power dissipation: 89W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 46mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 141ns
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WMO4N65D1B WMO4N65D1B WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 77W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 16A
Power dissipation: 77W
Gate charge: 14.5nC
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WMO4N80D1B WMO4N80D1B WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 96W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 96W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMO4N90D1C WMO4N90D1C WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4A; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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WMO50N06TS WMO50N06TS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 69.4W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 69.4W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMO50N20JN WMO50N20JN WAYON WMx50N20JN.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; Idm: 120A; 90W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Pulsed drain current: 120A
Power dissipation: 90W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 138ns
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WMO55N03T1 WMO55N03T1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 55A; Idm: 220A; 34.7W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 55A
Pulsed drain current: 220A
Power dissipation: 34.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 13.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMO5N50D1B WMO5N50D1B WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 5A; Idm: 20A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 45W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.35Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMO60N04T1 WMO60N04T1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 60A; Idm: 240A; 46.2W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Power dissipation: 46.2W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 240A
Gate charge: 36nC
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WMO60P02TS WMO60P02TS WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -60A; Idm: -240A; 45W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -60A
Pulsed drain current: -240A
Power dissipation: 45W
Case: TO252
Gate-source voltage: ±10V
On-state resistance: 8.2mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMO6N80D1 WMO6N80D1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 6A; Idm: 24A; 45.8W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 45.8W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMO6N80D1B WMO6N80D1B WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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WMO75N04T1 WMO75N04T1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 75A; Idm: 300A; 44.6W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 75A
Pulsed drain current: 300A
Power dissipation: 44.6W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMO7N65D1B WMO7N65D1B WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 7A; Idm: 28A; 150W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.35Ω
Mounting: SMD
Gate charge: 24.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMO80N03T1 WMO80N03T1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 320A; 59.5W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 59.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMO80N06TS WMO80N06TS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; Idm: 320A; 92W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 92W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMO85N20JN WMO85N20JN WAYON WMx85N20JN.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 50A; Idm: 240A; 180W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 240A
Power dissipation: 180W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 21nC
Reverse recovery time: 160ns
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WMO90N02T1 WMO90N02T1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 90A; Idm: 222A; 39W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 90A
Pulsed drain current: 222A
Power dissipation: 39W
Case: TO252
Gate-source voltage: ±10V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
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WMO90P03TS WMO90P03TS WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -90A; Idm: -360A; 69.4W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -90A
Pulsed drain current: -360A
Power dissipation: 69.4W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 93.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMO90R500S WMO90R500S WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 900V; TO252
Case: TO252
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Technology: WMOS™ S
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
On-state resistance: 0.5Ω
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WMO96N03T1 WMO96N03T1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 96A; Idm: 380A; 62.5W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 96A
Pulsed drain current: 380A
Power dissipation: 62.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 264 Stücke:
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WMO9N50D1B WMO9N50D1B WAYON WMx9N50D1B.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 9A; Idm: 36A; 104W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 104W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.68Ω
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMO9N65D1 WMO9N65D1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 9A; Idm: 36A; 150W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 36A
Gate charge: 30nC
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WMP04N60C2 WMP04N60C2 WAYON WMx04N60C2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 3A; 29W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3A
Power dissipation: 29W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMO14N60C2 WMx14N60C2.pdf
WMO14N60C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 11A; 85W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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WMO14N60C4
WMO14N60C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 6A; Idm: 26A; 85W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 26A
Gate charge: 13nC
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WMO14N65C2 WMx14N65C2.pdf
WMO14N65C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 11A; 85W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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WMO14N65C4 WMx14N65C4.pdf
WMO14N65C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 6A; Idm: 26A; 85W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 26A
Power dissipation: 85W
Gate charge: 13nC
Technology: WMOS™ C4
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WMO15N10T1
WMO15N10T1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 60A; 41.7W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 41.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 20.6nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMO15N60C4
WMO15N60C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 7.8A; Idm: 26A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 26A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 14.6nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMO15N65C4
WMO15N65C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 7.8A; Idm: 26A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.8A
Pulsed drain current: 26A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 14.6nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMO15N65F2
WMO15N65F2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 7.8A; Idm: 26A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.8A
Pulsed drain current: 26A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 335mΩ
Mounting: SMD
Gate charge: 14.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMO16N60FD WMx16N60FD.pdf
WMO16N60FD
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 86W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMO16N65C2 WMx16N65C2.pdf
WMO16N65C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 86W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMO16N65FD WMx16N65FD.pdf
WMO16N65FD
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 13A; 86W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMO16N65SR
WMO16N65SR
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 8.4A; Idm: 35A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.4A
Pulsed drain current: 35A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: SMD
Gate charge: 19.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMO175N10HG4
WMO175N10HG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 180A; 67.5W; TO252
Pulsed drain current: 180A
Power dissipation: 67.5W
Gate charge: 17nC
Polarisation: unipolar
Drain current: 45A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: TO252
On-state resistance: 17.5mΩ
Mounting: SMD
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75+1.14 EUR
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WMO175N10LG4
WMO175N10LG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 180A; 67.5W; TO252
Pulsed drain current: 180A
Power dissipation: 67.5W
Gate charge: 22.5nC
Polarisation: unipolar
Drain current: 45A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: TO252
On-state resistance: 17mΩ
Mounting: SMD
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WMO17N25JN WMx17N25JN.pdf
WMO17N25JN
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 6.5A; Idm: 33A; 36W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 6.5A
Pulsed drain current: 33A
Power dissipation: 36W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 7.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 98ns
Produkt ist nicht verfügbar
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WMO18N20JN WMx18N20JN.pdf
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 7A; Idm: 39A; 36W; TO252; 80ns
Case: TO252
Mounting: SMD
Reverse recovery time: 80ns
On-state resistance: 135mΩ
Drain current: 7A
Gate-source voltage: ±20V
Power dissipation: 36W
Pulsed drain current: 39A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 7.2nC
Produkt ist nicht verfügbar
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WMO18N20T2 WMO18N20T2.pdf
WMO18N20T2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 83W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 18A
Pulsed drain current: 72A
Power dissipation: 83W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 11nC
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WMO18N50C4
WMO18N50C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 10A; Idm: 50A; 75W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10A
Pulsed drain current: 50A
Power dissipation: 75W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMO18N65EM
WMO18N65EM
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 8.6A; Idm: 43A; 125W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.6A
Pulsed drain current: 43A
Power dissipation: 125W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMO18P10TS WMO18P10TS.pdf
WMO18P10TS
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -18A; Idm: -72A; 70W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -18A
Pulsed drain current: -72A
Power dissipation: 70W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 79 Stücke:
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79+1.07 EUR
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WMO190N03TS
WMO190N03TS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 190A; Idm: 760A; 166.7W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 190A
Pulsed drain current: 760A
Power dissipation: 166.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2440 Stücke:
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100+0.86 EUR
168+0.51 EUR
187+0.45 EUR
211+0.4 EUR
250+0.36 EUR
1000+0.35 EUR
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WMO20N65EM
WMO20N65EM
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO252
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMO20P15TS
WMO20P15TS
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -20A; Idm: -80A; 147W; TO252
On-state resistance: 0.175Ω
Mounting: SMD
Pulsed drain current: -80A
Power dissipation: 147W
Gate charge: 84nC
Polarisation: unipolar
Drain current: -20A
Kind of channel: enhancement
Drain-source voltage: -150V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: TO252
auf Bestellung 135 Stücke:
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79+1.09 EUR
129+0.65 EUR
135+0.63 EUR
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WMO22N50C4
WMO22N50C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 11A; Idm: 60A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Pulsed drain current: 60A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 14.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMO240N10LG2
WMO240N10LG2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; Idm: 144A; 56.8W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Pulsed drain current: 144A
Power dissipation: 56.8W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 15.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2510 Stücke:
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125+0.68 EUR
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261+0.32 EUR
296+0.29 EUR
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WMO25N06TS
WMO25N06TS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 41.7W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 41.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1828 Stücke:
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122+0.7 EUR
291+0.3 EUR
385+0.23 EUR
432+0.2 EUR
486+0.18 EUR
1000+0.17 EUR
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WMO25N50C4
WMO25N50C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 13A; Idm: 65A; 135W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 135W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMO25P03TS
WMO25P03TS
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -25A; Idm: -100A; 22.5W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -25A
Pulsed drain current: -100A
Power dissipation: 22.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 235 Stücke:
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114+0.75 EUR
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WMO25P06T1
WMO25P06T1
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -25A; Idm: -100A; 44.6W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -25A
Pulsed drain current: -100A
Power dissipation: 44.6W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2485 Stücke:
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125+0.68 EUR
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WMO26N60C4
WMO26N60C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMO26N65C4 WMx26N65C4.pdf
WMO26N65C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMO26N65F2
WMO26N65F2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMO30P03TS
WMO30P03TS
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -30A; Idm: -120A; 24W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -30A
Pulsed drain current: -120A
Power dissipation: 24W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 15.5mΩ
Mounting: SMD
Gate charge: 20.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 349 Stücke:
Lieferzeit 14-21 Tag (e)
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100+0.86 EUR
241+0.36 EUR
321+0.26 EUR
349+0.24 EUR
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WMO30P10TS
WMO30P10TS
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -35A; Idm: -140A; 119W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -35A
Pulsed drain current: -140A
Power dissipation: 119W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 115nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMO35N06T1
WMO35N06T1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35A; Idm: 140A; 44.6W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Pulsed drain current: 140A
Power dissipation: 44.6W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 14.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 412 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
125+0.68 EUR
271+0.31 EUR
302+0.29 EUR
341+0.25 EUR
379+0.23 EUR
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WMO40N04TS
WMO40N04TS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 160A; 33W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Power dissipation: 33W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 12.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 160A
Gate charge: 22.2nC
auf Bestellung 316 Stücke:
Lieferzeit 14-21 Tag (e)
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125+0.68 EUR
275+0.31 EUR
316+0.27 EUR
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WMO40N20JN WMx40N20JN.pdf
WMO40N20JN
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 21A; Idm: 110A; 89W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 21A
Pulsed drain current: 110A
Power dissipation: 89W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 46mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 141ns
Produkt ist nicht verfügbar
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WMO4N65D1B
WMO4N65D1B
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 77W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 16A
Power dissipation: 77W
Gate charge: 14.5nC
Produkt ist nicht verfügbar
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WMO4N80D1B
WMO4N80D1B
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 96W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 96W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMO4N90D1C
WMO4N90D1C
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4A; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMO50N06TS
WMO50N06TS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 69.4W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 69.4W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 76 Stücke:
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76+1.12 EUR
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WMO50N20JN WMx50N20JN.pdf
WMO50N20JN
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 24A; Idm: 120A; 90W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 24A
Pulsed drain current: 120A
Power dissipation: 90W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 138ns
Produkt ist nicht verfügbar
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WMO55N03T1
WMO55N03T1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 55A; Idm: 220A; 34.7W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 55A
Pulsed drain current: 220A
Power dissipation: 34.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 13.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 415 Stücke:
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109+0.79 EUR
260+0.33 EUR
343+0.25 EUR
388+0.21 EUR
415+0.2 EUR
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WMO5N50D1B
WMO5N50D1B
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 5A; Idm: 20A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 45W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.35Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMO60N04T1
WMO60N04T1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 60A; Idm: 240A; 46.2W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Power dissipation: 46.2W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 240A
Gate charge: 36nC
auf Bestellung 229 Stücke:
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132+0.64 EUR
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WMO60P02TS
WMO60P02TS
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -60A; Idm: -240A; 45W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -60A
Pulsed drain current: -240A
Power dissipation: 45W
Case: TO252
Gate-source voltage: ±10V
On-state resistance: 8.2mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 417 Stücke:
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132+0.64 EUR
281+0.3 EUR
313+0.27 EUR
353+0.24 EUR
391+0.21 EUR
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WMO6N80D1
WMO6N80D1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 6A; Idm: 24A; 45.8W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Pulsed drain current: 24A
Power dissipation: 45.8W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.5Ω
Mounting: SMD
Gate charge: 29nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMO6N80D1B
WMO6N80D1B
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 6A; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6A
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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WMO75N04T1
WMO75N04T1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 75A; Idm: 300A; 44.6W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 75A
Pulsed drain current: 300A
Power dissipation: 44.6W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 389 Stücke:
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125+0.68 EUR
235+0.36 EUR
261+0.32 EUR
296+0.29 EUR
329+0.26 EUR
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WMO7N65D1B
WMO7N65D1B
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 7A; Idm: 28A; 150W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.35Ω
Mounting: SMD
Gate charge: 24.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMO80N03T1
WMO80N03T1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 320A; 59.5W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 59.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 207 Stücke:
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105+0.82 EUR
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WMO80N06TS
WMO80N06TS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; Idm: 320A; 92W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 92W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 297 Stücke:
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103+0.83 EUR
169+0.5 EUR
188+0.45 EUR
214+0.39 EUR
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WMO85N20JN WMx85N20JN.pdf
WMO85N20JN
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 50A; Idm: 240A; 180W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 50A
Pulsed drain current: 240A
Power dissipation: 180W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 13.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 21nC
Reverse recovery time: 160ns
Produkt ist nicht verfügbar
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WMO90N02T1
WMO90N02T1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 90A; Idm: 222A; 39W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 90A
Pulsed drain current: 222A
Power dissipation: 39W
Case: TO252
Gate-source voltage: ±10V
On-state resistance: 4.5mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 442 Stücke:
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129+0.67 EUR
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WMO90P03TS
WMO90P03TS
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -90A; Idm: -360A; 69.4W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -90A
Pulsed drain current: -360A
Power dissipation: 69.4W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 93.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMO90R500S
WMO90R500S
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ S; unipolar; 900V; TO252
Case: TO252
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Technology: WMOS™ S
Kind of channel: enhancement
Drain-source voltage: 900V
Type of transistor: N-MOSFET
On-state resistance: 0.5Ω
Produkt ist nicht verfügbar
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WMO96N03T1
WMO96N03T1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 96A; Idm: 380A; 62.5W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 96A
Pulsed drain current: 380A
Power dissipation: 62.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 3.7mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 264 Stücke:
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125+0.68 EUR
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WMO9N50D1B WMx9N50D1B.pdf
WMO9N50D1B
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 9A; Idm: 36A; 104W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 104W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.68Ω
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2494 Stücke:
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231+0.37 EUR
317+0.27 EUR
360+0.24 EUR
400+0.21 EUR
1000+0.2 EUR
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WMO9N65D1
WMO9N65D1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 9A; Idm: 36A; 150W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.85Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 36A
Gate charge: 30nC
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WMP04N60C2 WMx04N60C2.pdf
WMP04N60C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 3A; 29W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3A
Power dissipation: 29W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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