Produkte > WAYON > Alle Produkte des Herstellers WAYON (1191) > Seite 17 nach 20

Wählen Sie Seite:   [  << Vorherige Seite ]  1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
WMO04N70C2 WMO04N70C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD8C3437C9FE0C4&compId=WMx04N70C2.pdf?ci_sign=9a5ca69f43daafa66c363b03d22784e32e3dc88c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 2.6A; 29W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.6A
Power dissipation: 29W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO05N100C2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1kV; 2A; Idm: 11A; 57W
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Pulsed drain current: 11A
Power dissipation: 57W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 12.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO05N65MM WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ MM; unipolar; 650V; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ MM
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO252
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO060N10HGS WMO060N10HGS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 105A; Idm: 420A; 138.9W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 105A
Pulsed drain current: 420A
Power dissipation: 138.9W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 81.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.3 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
WMO06N80M3 WMO06N80M3 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDA21010A44E0C4&compId=WMx06N80M3.pdf?ci_sign=ec8e8d7d3709bd363b5b8ab33fb3f9a55c0975cf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 5A; 50W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 50W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO07N100C2 WMO07N100C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA087762C9B2CC0D3&compId=WMx07N100C2.pdf?ci_sign=45f16368a8a579592d69d6a9154c17bc1bda521c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1kV; 2.2A; Idm: 12A; 65W
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2.2A
Pulsed drain current: 12A
Power dissipation: 65W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 3.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 260ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO07N60C2 WMO07N60C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD8424D8A3F60C4&compId=WMO07N60C2.pdf?ci_sign=e655245c5f75cfee74cfeb3d6895fb3178cd8e59 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 42W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
auf Bestellung 180 Stücke:
Lieferzeit 14-21 Tag (e)
65+1.1 EUR
162+0.44 EUR
180+0.4 EUR
Mindestbestellmenge: 65
Im Einkaufswagen  Stück im Wert von  UAH
WMO07N60C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 2.8A; Idm: 9A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.8A
Pulsed drain current: 9A
Power dissipation: 42W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C4
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO07N65C2 WMO07N65C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD8DDDE141D80C4&compId=WMx07N65C2.pdf?ci_sign=12fb0e6fbf32e6c1e4a842214d0eefc693fd8b91 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 42W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
auf Bestellung 321 Stücke:
Lieferzeit 14-21 Tag (e)
107+0.67 EUR
178+0.4 EUR
197+0.36 EUR
Mindestbestellmenge: 107
Im Einkaufswagen  Stück im Wert von  UAH
WMO07N65C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 2.8A; Idm: 9A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.8A
Pulsed drain current: 9A
Power dissipation: 42W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C4
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO07N70C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 700V; 2.8A; Idm: 9A; 42W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.8A
Power dissipation: 42W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 9A
Gate charge: 5.2nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO07N80M3 WMO07N80M3 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDB89ABB6E3A0C4&compId=WMx07N80M3.pdf?ci_sign=6a794b033230990678cf1608413dc9779f696430 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 6.8A; 55W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6.8A
Power dissipation: 55W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ M3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO080N10HG2 WMO080N10HG2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 53.7A; Idm: 340A; 108.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 53.7A
Pulsed drain current: 340A
Power dissipation: 108.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 99 Stücke:
Lieferzeit 14-21 Tag (e)
67+1.07 EUR
97+0.74 EUR
99+0.73 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
WMO08N60C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 3.6A; Idm: 12A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.6A
Pulsed drain current: 12A
Power dissipation: 45W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO08N65C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 3.6A; Idm: 12A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.6A
Pulsed drain current: 12A
Power dissipation: 45W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO08N70C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 700V; 3.6A; Idm: 12A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.6A
Pulsed drain current: 12A
Power dissipation: 45W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO08N80M3 WMO08N80M3 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDB90B6AFB840C4&compId=WMx08N80M3.pdf?ci_sign=e645aed102b3924e9e6222dd0a497007367f86c4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 7A; 70W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 70W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1934 Stücke:
Lieferzeit 14-21 Tag (e)
139+0.51 EUR
150+0.48 EUR
154+0.46 EUR
Mindestbestellmenge: 139
Im Einkaufswagen  Stück im Wert von  UAH
WMO09N20DM WMO09N20DM WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9A; Idm: 36A; 80W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 80W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 41.3nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 290 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.57 EUR
240+0.3 EUR
266+0.27 EUR
290+0.24 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
WMO09N20DMH WMO09N20DMH WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9A; Idm: 36A; 80.6W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 80.6W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: SMD
Gate charge: 19.1nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 294 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.57 EUR
237+0.3 EUR
264+0.27 EUR
294+0.24 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
WMO09N25JN WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1FD091F0F839BE31A0DF&compId=WMx09N25JN.pdf?ci_sign=9478e9dd42f3120c396840806c34e710cd6aa032 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 4.2A; Idm: 21A; 31W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 4.2A
Pulsed drain current: 21A
Power dissipation: 31W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 3.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 75ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO100N07T1 WMO100N07T1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 70V; 100A; Idm: 400A; 133W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 70V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 133W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)
66+1.09 EUR
96+0.74 EUR
Mindestbestellmenge: 66
Im Einkaufswagen  Stück im Wert von  UAH
WMO10N100C2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1kV; 3.3A; Idm: 18A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3.3A
Pulsed drain current: 18A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 18.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO10N50C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 4.8A; Idm: 16A; 45W
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: TO252
Polarisation: unipolar
Technology: WMOS™ C4
Gate charge: 7.3nC
On-state resistance: 0.63Ω
Drain current: 4.8A
Pulsed drain current: 16A
Power dissipation: 45W
Gate-source voltage: ±30V
Drain-source voltage: 500V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO10N60C2 WMO10N60C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDBACCD1D7B80C4&compId=WMx10N60C2.pdf?ci_sign=a19361664581ff508e40a808bf4751e5f8769ed0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 8A; 57W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 57W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1766 Stücke:
Lieferzeit 14-21 Tag (e)
136+0.53 EUR
155+0.46 EUR
173+0.41 EUR
183+0.39 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
WMO10N60C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 4.8A; Idm: 19A; 57W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.8A
Power dissipation: 57W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 19A
Gate charge: 9.6nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO10N65C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 4.8A; Idm: 19A; 57W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.8A
Power dissipation: 57W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 19A
Gate charge: 9.6nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO10N65EM WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 4.8A; Idm: 24A; 63W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.8A
Power dissipation: 63W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 24A
Gate charge: 13.5nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO10N70C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 700V; 4.8A; Idm: 19A; 57W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Pulsed drain current: 19A
Power dissipation: 57W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 9.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO10N70EM WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 700V; 4.8A; Idm: 24A; 63W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Pulsed drain current: 24A
Power dissipation: 63W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 13.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO10N80M3 WMO10N80M3 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDBC9574E7020C4&compId=WMx10N80M3.pdf?ci_sign=c8761bd1e990f7fb61ff60a384d39e1833272d57 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.03Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2177 Stücke:
Lieferzeit 14-21 Tag (e)
95+0.76 EUR
103+0.7 EUR
109+0.66 EUR
115+0.62 EUR
250+0.61 EUR
500+0.6 EUR
Mindestbestellmenge: 95
Im Einkaufswagen  Stück im Wert von  UAH
WMO11N60C2 WMO11N60C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DECE8C5CFCE00C4&compId=WMx11N60C2.pdf?ci_sign=db2cde9e00c4eace681b4b38ef1050f8616c55b0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 9A; 63W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 63W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2071 Stücke:
Lieferzeit 14-21 Tag (e)
132+0.54 EUR
136+0.53 EUR
Mindestbestellmenge: 132
Im Einkaufswagen  Stück im Wert von  UAH
WMO11N65C2 WMO11N65C2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 9A; 63W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9A
Power dissipation: 63W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.4 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
WMO11N65SR WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 5.4A; Idm: 19A; 63W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5.4A
Power dissipation: 63W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 19A
Gate charge: 13.7nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO11N70C2 WMO11N70C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DECF160F49D40C4&compId=WMx11N70C2.pdf?ci_sign=adcacd2d7a221b7d4d6b48749d2c9e22cbd48ef2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 8A; 63W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8A
Power dissipation: 63W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.68Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO11N70SR WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 700V; 5.4A; Idm: 19A; 63W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 5.4A
Pulsed drain current: 19A
Power dissipation: 63W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 620mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ SR
Gate charge: 13.7nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO11N80M3 WMO11N80M3 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10.5A; 85W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10.5A
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 85W
Technology: WMOS™ M3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO12N80M3 WMO12N80M3 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8EA009DBDD7D60C4&compId=WMx12N80M3.pdf?ci_sign=ced0b39155cd7d7f30e65f161df1e7a32305e372 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 12A; 86W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 12A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 620mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1094 Stücke:
Lieferzeit 14-21 Tag (e)
30+2.39 EUR
33+2.19 EUR
38+1.9 EUR
65+1.12 EUR
68+1.06 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
WMO12P05T1 WMO12P05T1 WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -12A; Idm: -48A; 39W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -12A
Pulsed drain current: -48A
Power dissipation: 39W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 545 Stücke:
Lieferzeit 14-21 Tag (e)
148+0.49 EUR
353+0.2 EUR
463+0.15 EUR
527+0.14 EUR
545+0.13 EUR
Mindestbestellmenge: 148
Im Einkaufswagen  Stück im Wert von  UAH
WMO12P06TS WMO12P06TS WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -20A; Idm: -80A; 62.5W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -20A
Pulsed drain current: -80A
Power dissipation: 62.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 21.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.79 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
WMO13N50C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 6A; Idm: 25A; 57W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Pulsed drain current: 25A
Power dissipation: 57W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: SMD
Gate charge: 9.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO13N65EM WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 6.5A; Idm: 35A; 85W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.5A
Pulsed drain current: 35A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 20.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO13N70EM WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 700V; 6.5A; Idm: 35A; 85W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 6.5A
Pulsed drain current: 35A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 20.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO13N80M3 WMO13N80M3 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DED0A9903D3E0C4&compId=WMx13N80M3.pdf?ci_sign=a1f16a4f0a124d54dbcc308680bc341ce0957ba6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 13A; 130W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Power dissipation: 130W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO13P10TS WMO13P10TS WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13.4A; Idm: -53.6A; 62.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13.4A
Pulsed drain current: -53.6A
Power dissipation: 62.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 490 Stücke:
Lieferzeit 14-21 Tag (e)
103+0.7 EUR
201+0.36 EUR
265+0.27 EUR
323+0.22 EUR
343+0.21 EUR
Mindestbestellmenge: 103
Im Einkaufswagen  Stück im Wert von  UAH
WMO140NV6LG4 WMO140NV6LG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 50A; Idm: 200A; 62.5W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 62.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO14N60C2 WMO14N60C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DECFA798FFCC0C4&compId=WMx14N60C2.pdf?ci_sign=b819e79c003991ca9b13e3ef08e17c81b6f7de85 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 11A; 85W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1389 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.44 EUR
167+0.43 EUR
171+0.42 EUR
Mindestbestellmenge: 162
Im Einkaufswagen  Stück im Wert von  UAH
WMO14N60C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 6A; Idm: 26A; 85W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 26A
Gate charge: 13nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO14N65C4 WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8B8D13C79D98E0D5&compId=WMx14N65C4.pdf?ci_sign=7d06778ea3b30f4c5290ba3e47c6d80aa415de0f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 6A; Idm: 26A; 85W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Pulsed drain current: 26A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C4
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO15N10T1 WMO15N10T1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 60A; 41.7W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 41.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 20.6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 935 Stücke:
Lieferzeit 14-21 Tag (e)
112+0.64 EUR
272+0.26 EUR
360+0.2 EUR
404+0.18 EUR
432+0.17 EUR
451+0.16 EUR
Mindestbestellmenge: 112
Im Einkaufswagen  Stück im Wert von  UAH
WMO15N60C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 7.8A; Idm: 26A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 26A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 14.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO15N65C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 7.8A; Idm: 26A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO252
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 14.6nC
Drain current: 7.8A
Power dissipation: 86W
Pulsed drain current: 26A
Gate-source voltage: ±30V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO15N65F2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 7.8A; Idm: 26A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO252
On-state resistance: 335mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 14.7nC
Drain current: 7.8A
Power dissipation: 86W
Pulsed drain current: 26A
Gate-source voltage: ±30V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO16N60FD WMO16N60FD WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DED1A787C27A0C4&compId=WMx16N60FD.pdf?ci_sign=2f2e8100f4cf1e040bcbf9e2809c91c007c11a24 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 86W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO16N65C2 WMO16N65C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DED5794077E20C4&compId=WMx16N65C2.pdf?ci_sign=207ac409f6744770aaf787fdcf75d89f44ca6587 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 86W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 119 Stücke:
Lieferzeit 14-21 Tag (e)
66+1.09 EUR
75+0.96 EUR
85+0.85 EUR
90+0.8 EUR
100+0.79 EUR
Mindestbestellmenge: 66
Im Einkaufswagen  Stück im Wert von  UAH
WMO16N65FD WMO16N65FD WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DED71526EBA40C4&compId=WMx16N65FD.pdf?ci_sign=e2fdb4f482106f9ea7323924fd1a6918ee2d3acc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 13A; 86W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO16N65SR WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 8.4A; Idm: 35A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.4A
Pulsed drain current: 35A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: SMD
Gate charge: 19.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO175N10HG4 WMO175N10HG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 180A; 67.5W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 67.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
87+0.83 EUR
145+0.49 EUR
161+0.44 EUR
191+0.37 EUR
200+0.36 EUR
Mindestbestellmenge: 87
Im Einkaufswagen  Stück im Wert von  UAH
WMO175N10LG4 WMO175N10LG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 180A; 67.5W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 67.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 22.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
112+0.64 EUR
185+0.39 EUR
200+0.36 EUR
Mindestbestellmenge: 112
Im Einkaufswagen  Stück im Wert von  UAH
WMO18N20JN WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1FD091F052BC183460DF&compId=WMx18N20JN.pdf?ci_sign=fc2448d11187b1127b662e603dfa38eeb089f0c9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 7A; Idm: 39A; 36W; TO252; 80ns
Case: TO252
Mounting: SMD
Reverse recovery time: 80ns
On-state resistance: 135mΩ
Drain current: 7A
Gate-source voltage: ±20V
Power dissipation: 36W
Pulsed drain current: 39A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 7.2nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO18N20T2 WMO18N20T2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 83W; TO252
Case: TO252
Mounting: SMD
On-state resistance: 0.13Ω
Drain current: 18A
Gate-source voltage: ±20V
Power dissipation: 83W
Pulsed drain current: 72A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 11nC
auf Bestellung 82 Stücke:
Lieferzeit 14-21 Tag (e)
67+1.07 EUR
82+0.87 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
WMO04N70C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD8C3437C9FE0C4&compId=WMx04N70C2.pdf?ci_sign=9a5ca69f43daafa66c363b03d22784e32e3dc88c
WMO04N70C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 2.6A; 29W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.6A
Power dissipation: 29W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO05N100C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1kV; 2A; Idm: 11A; 57W
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Pulsed drain current: 11A
Power dissipation: 57W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 12.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO05N65MM
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ MM; unipolar; 650V; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ MM
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO252
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO060N10HGS
WMO060N10HGS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 105A; Idm: 420A; 138.9W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 105A
Pulsed drain current: 420A
Power dissipation: 138.9W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 81.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.3 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
WMO06N80M3 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDA21010A44E0C4&compId=WMx06N80M3.pdf?ci_sign=ec8e8d7d3709bd363b5b8ab33fb3f9a55c0975cf
WMO06N80M3
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 5A; 50W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 50W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO07N100C2 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA087762C9B2CC0D3&compId=WMx07N100C2.pdf?ci_sign=45f16368a8a579592d69d6a9154c17bc1bda521c
WMO07N100C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1kV; 2.2A; Idm: 12A; 65W
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2.2A
Pulsed drain current: 12A
Power dissipation: 65W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 3.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 260ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO07N60C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD8424D8A3F60C4&compId=WMO07N60C2.pdf?ci_sign=e655245c5f75cfee74cfeb3d6895fb3178cd8e59
WMO07N60C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 42W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
auf Bestellung 180 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
65+1.1 EUR
162+0.44 EUR
180+0.4 EUR
Mindestbestellmenge: 65
Im Einkaufswagen  Stück im Wert von  UAH
WMO07N60C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 2.8A; Idm: 9A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.8A
Pulsed drain current: 9A
Power dissipation: 42W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C4
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO07N65C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD8DDDE141D80C4&compId=WMx07N65C2.pdf?ci_sign=12fb0e6fbf32e6c1e4a842214d0eefc693fd8b91
WMO07N65C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 42W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
auf Bestellung 321 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
107+0.67 EUR
178+0.4 EUR
197+0.36 EUR
Mindestbestellmenge: 107
Im Einkaufswagen  Stück im Wert von  UAH
WMO07N65C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 2.8A; Idm: 9A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.8A
Pulsed drain current: 9A
Power dissipation: 42W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C4
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO07N70C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 700V; 2.8A; Idm: 9A; 42W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.8A
Power dissipation: 42W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 9A
Gate charge: 5.2nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO07N80M3 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDB89ABB6E3A0C4&compId=WMx07N80M3.pdf?ci_sign=6a794b033230990678cf1608413dc9779f696430
WMO07N80M3
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 6.8A; 55W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6.8A
Power dissipation: 55W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ M3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO080N10HG2
WMO080N10HG2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 53.7A; Idm: 340A; 108.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 53.7A
Pulsed drain current: 340A
Power dissipation: 108.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 99 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
67+1.07 EUR
97+0.74 EUR
99+0.73 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
WMO08N60C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 3.6A; Idm: 12A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.6A
Pulsed drain current: 12A
Power dissipation: 45W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO08N65C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 3.6A; Idm: 12A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.6A
Pulsed drain current: 12A
Power dissipation: 45W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO08N70C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 700V; 3.6A; Idm: 12A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 3.6A
Pulsed drain current: 12A
Power dissipation: 45W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO08N80M3 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDB90B6AFB840C4&compId=WMx08N80M3.pdf?ci_sign=e645aed102b3924e9e6222dd0a497007367f86c4
WMO08N80M3
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 7A; 70W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 70W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1934 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
139+0.51 EUR
150+0.48 EUR
154+0.46 EUR
Mindestbestellmenge: 139
Im Einkaufswagen  Stück im Wert von  UAH
WMO09N20DM
WMO09N20DM
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9A; Idm: 36A; 80W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 80W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 41.3nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 290 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
240+0.3 EUR
266+0.27 EUR
290+0.24 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
WMO09N20DMH
WMO09N20DMH
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9A; Idm: 36A; 80.6W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 80.6W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: SMD
Gate charge: 19.1nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 294 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
237+0.3 EUR
264+0.27 EUR
294+0.24 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
WMO09N25JN pVersion=0046&contRep=ZT&docId=005056AB281E1FD091F0F839BE31A0DF&compId=WMx09N25JN.pdf?ci_sign=9478e9dd42f3120c396840806c34e710cd6aa032
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 4.2A; Idm: 21A; 31W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 4.2A
Pulsed drain current: 21A
Power dissipation: 31W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 3.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 75ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO100N07T1
WMO100N07T1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 70V; 100A; Idm: 400A; 133W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 70V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 133W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
66+1.09 EUR
96+0.74 EUR
Mindestbestellmenge: 66
Im Einkaufswagen  Stück im Wert von  UAH
WMO10N100C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1kV; 3.3A; Idm: 18A; 86W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 3.3A
Pulsed drain current: 18A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 18.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO10N50C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 4.8A; Idm: 16A; 45W
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: TO252
Polarisation: unipolar
Technology: WMOS™ C4
Gate charge: 7.3nC
On-state resistance: 0.63Ω
Drain current: 4.8A
Pulsed drain current: 16A
Power dissipation: 45W
Gate-source voltage: ±30V
Drain-source voltage: 500V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO10N60C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDBACCD1D7B80C4&compId=WMx10N60C2.pdf?ci_sign=a19361664581ff508e40a808bf4751e5f8769ed0
WMO10N60C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 8A; 57W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 57W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1766 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
155+0.46 EUR
173+0.41 EUR
183+0.39 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
WMO10N60C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 4.8A; Idm: 19A; 57W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.8A
Power dissipation: 57W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 19A
Gate charge: 9.6nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO10N65C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 4.8A; Idm: 19A; 57W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.8A
Power dissipation: 57W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 19A
Gate charge: 9.6nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO10N65EM
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 4.8A; Idm: 24A; 63W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.8A
Power dissipation: 63W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 24A
Gate charge: 13.5nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO10N70C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 700V; 4.8A; Idm: 19A; 57W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Pulsed drain current: 19A
Power dissipation: 57W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 9.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO10N70EM
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 700V; 4.8A; Idm: 24A; 63W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Pulsed drain current: 24A
Power dissipation: 63W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 13.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO10N80M3 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDBC9574E7020C4&compId=WMx10N80M3.pdf?ci_sign=c8761bd1e990f7fb61ff60a384d39e1833272d57
WMO10N80M3
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.03Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2177 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
95+0.76 EUR
103+0.7 EUR
109+0.66 EUR
115+0.62 EUR
250+0.61 EUR
500+0.6 EUR
Mindestbestellmenge: 95
Im Einkaufswagen  Stück im Wert von  UAH
WMO11N60C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DECE8C5CFCE00C4&compId=WMx11N60C2.pdf?ci_sign=db2cde9e00c4eace681b4b38ef1050f8616c55b0
WMO11N60C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 9A; 63W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 63W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2071 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
132+0.54 EUR
136+0.53 EUR
Mindestbestellmenge: 132
Im Einkaufswagen  Stück im Wert von  UAH
WMO11N65C2
WMO11N65C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 9A; 63W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9A
Power dissipation: 63W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 21 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.4 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
WMO11N65SR
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 5.4A; Idm: 19A; 63W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5.4A
Power dissipation: 63W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 19A
Gate charge: 13.7nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO11N70C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DECF160F49D40C4&compId=WMx11N70C2.pdf?ci_sign=adcacd2d7a221b7d4d6b48749d2c9e22cbd48ef2
WMO11N70C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 8A; 63W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8A
Power dissipation: 63W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.68Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO11N70SR
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 700V; 5.4A; Idm: 19A; 63W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 5.4A
Pulsed drain current: 19A
Power dissipation: 63W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 620mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ SR
Gate charge: 13.7nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO11N80M3
WMO11N80M3
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10.5A; 85W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10.5A
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 85W
Technology: WMOS™ M3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO12N80M3 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8EA009DBDD7D60C4&compId=WMx12N80M3.pdf?ci_sign=ced0b39155cd7d7f30e65f161df1e7a32305e372
WMO12N80M3
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 12A; 86W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 12A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 620mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1094 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.39 EUR
33+2.19 EUR
38+1.9 EUR
65+1.12 EUR
68+1.06 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
WMO12P05T1
WMO12P05T1
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -12A; Idm: -48A; 39W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -12A
Pulsed drain current: -48A
Power dissipation: 39W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 545 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
148+0.49 EUR
353+0.2 EUR
463+0.15 EUR
527+0.14 EUR
545+0.13 EUR
Mindestbestellmenge: 148
Im Einkaufswagen  Stück im Wert von  UAH
WMO12P06TS
WMO12P06TS
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -20A; Idm: -80A; 62.5W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -20A
Pulsed drain current: -80A
Power dissipation: 62.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 21.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.79 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
WMO13N50C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 6A; Idm: 25A; 57W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Pulsed drain current: 25A
Power dissipation: 57W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: SMD
Gate charge: 9.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO13N65EM
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 6.5A; Idm: 35A; 85W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.5A
Pulsed drain current: 35A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 20.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO13N70EM
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 700V; 6.5A; Idm: 35A; 85W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 6.5A
Pulsed drain current: 35A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 20.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO13N80M3 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DED0A9903D3E0C4&compId=WMx13N80M3.pdf?ci_sign=a1f16a4f0a124d54dbcc308680bc341ce0957ba6
WMO13N80M3
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 13A; 130W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Power dissipation: 130W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO13P10TS
WMO13P10TS
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -13.4A; Idm: -53.6A; 62.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -13.4A
Pulsed drain current: -53.6A
Power dissipation: 62.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.17Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 490 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
103+0.7 EUR
201+0.36 EUR
265+0.27 EUR
323+0.22 EUR
343+0.21 EUR
Mindestbestellmenge: 103
Im Einkaufswagen  Stück im Wert von  UAH
WMO140NV6LG4
WMO140NV6LG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 50A; Idm: 200A; 62.5W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 62.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO14N60C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DECFA798FFCC0C4&compId=WMx14N60C2.pdf?ci_sign=b819e79c003991ca9b13e3ef08e17c81b6f7de85
WMO14N60C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 11A; 85W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1389 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
167+0.43 EUR
171+0.42 EUR
Mindestbestellmenge: 162
Im Einkaufswagen  Stück im Wert von  UAH
WMO14N60C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 6A; Idm: 26A; 85W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 26A
Gate charge: 13nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO14N65C4 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8B8D13C79D98E0D5&compId=WMx14N65C4.pdf?ci_sign=7d06778ea3b30f4c5290ba3e47c6d80aa415de0f
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 6A; Idm: 26A; 85W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Pulsed drain current: 26A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C4
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO15N10T1
WMO15N10T1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 60A; 41.7W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 41.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 20.6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 935 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
112+0.64 EUR
272+0.26 EUR
360+0.2 EUR
404+0.18 EUR
432+0.17 EUR
451+0.16 EUR
Mindestbestellmenge: 112
Im Einkaufswagen  Stück im Wert von  UAH
WMO15N60C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 7.8A; Idm: 26A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Pulsed drain current: 26A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 14.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO15N65C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 7.8A; Idm: 26A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO252
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 14.6nC
Drain current: 7.8A
Power dissipation: 86W
Pulsed drain current: 26A
Gate-source voltage: ±30V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO15N65F2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 7.8A; Idm: 26A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO252
On-state resistance: 335mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 14.7nC
Drain current: 7.8A
Power dissipation: 86W
Pulsed drain current: 26A
Gate-source voltage: ±30V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO16N60FD pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DED1A787C27A0C4&compId=WMx16N60FD.pdf?ci_sign=2f2e8100f4cf1e040bcbf9e2809c91c007c11a24
WMO16N60FD
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 86W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO16N65C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DED5794077E20C4&compId=WMx16N65C2.pdf?ci_sign=207ac409f6744770aaf787fdcf75d89f44ca6587
WMO16N65C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 86W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 119 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
66+1.09 EUR
75+0.96 EUR
85+0.85 EUR
90+0.8 EUR
100+0.79 EUR
Mindestbestellmenge: 66
Im Einkaufswagen  Stück im Wert von  UAH
WMO16N65FD pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DED71526EBA40C4&compId=WMx16N65FD.pdf?ci_sign=e2fdb4f482106f9ea7323924fd1a6918ee2d3acc
WMO16N65FD
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 13A; 86W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO16N65SR
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 8.4A; Idm: 35A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.4A
Pulsed drain current: 35A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: SMD
Gate charge: 19.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO175N10HG4
WMO175N10HG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 180A; 67.5W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 67.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
87+0.83 EUR
145+0.49 EUR
161+0.44 EUR
191+0.37 EUR
200+0.36 EUR
Mindestbestellmenge: 87
Im Einkaufswagen  Stück im Wert von  UAH
WMO175N10LG4
WMO175N10LG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 180A; 67.5W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 67.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 22.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
112+0.64 EUR
185+0.39 EUR
200+0.36 EUR
Mindestbestellmenge: 112
Im Einkaufswagen  Stück im Wert von  UAH
WMO18N20JN pVersion=0046&contRep=ZT&docId=005056AB281E1FD091F052BC183460DF&compId=WMx18N20JN.pdf?ci_sign=fc2448d11187b1127b662e603dfa38eeb089f0c9
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 7A; Idm: 39A; 36W; TO252; 80ns
Case: TO252
Mounting: SMD
Reverse recovery time: 80ns
On-state resistance: 135mΩ
Drain current: 7A
Gate-source voltage: ±20V
Power dissipation: 36W
Pulsed drain current: 39A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 7.2nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO18N20T2
WMO18N20T2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 83W; TO252
Case: TO252
Mounting: SMD
On-state resistance: 0.13Ω
Drain current: 18A
Gate-source voltage: ±20V
Power dissipation: 83W
Pulsed drain current: 72A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 11nC
auf Bestellung 82 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
67+1.07 EUR
82+0.87 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20  [ Nächste Seite >> ]