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WMT04P06TS WMT04P06TS WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; SOT223
Case: SOT223
Mounting: SMD
Kind of package: tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
93+0.77 EUR
222+0.32 EUR
293+0.24 EUR
371+0.19 EUR
394+0.18 EUR
Mindestbestellmenge: 93
Im Einkaufswagen  Stück im Wert von  UAH
WMT04P10TS WMT04P10TS WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; SOT223
Case: SOT223
Mounting: SMD
Kind of package: tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 490 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.57 EUR
240+0.30 EUR
266+0.27 EUR
338+0.21 EUR
355+0.20 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
WMT05N10T1 WMT05N10T1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; SOT223
Case: SOT223
Mounting: SMD
Kind of package: tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 400 Stücke:
Lieferzeit 14-21 Tag (e)
95+0.76 EUR
226+0.32 EUR
298+0.24 EUR
376+0.19 EUR
397+0.18 EUR
Mindestbestellmenge: 95
Im Einkaufswagen  Stück im Wert von  UAH
WMT05N12TS WMT05N12TS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; SOT223
Case: SOT223
Mounting: SMD
Kind of package: tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
117+0.61 EUR
223+0.32 EUR
247+0.29 EUR
313+0.23 EUR
329+0.22 EUR
Mindestbestellmenge: 117
Im Einkaufswagen  Stück im Wert von  UAH
WMT07N03T1 WMT07N03T1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; SOT223
Case: SOT223
Mounting: SMD
Kind of package: tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
112+0.64 EUR
300+0.24 EUR
424+0.17 EUR
477+0.15 EUR
500+0.14 EUR
Mindestbestellmenge: 112
Im Einkaufswagen  Stück im Wert von  UAH
WMT07N06TS WMT07N06TS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; SOT223
Case: SOT223
Mounting: SMD
Kind of package: tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
105+0.69 EUR
249+0.29 EUR
325+0.22 EUR
410+0.17 EUR
435+0.16 EUR
Mindestbestellmenge: 105
Im Einkaufswagen  Stück im Wert von  UAH
WMT07N10TS WMT07N10TS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; SOT223
Case: SOT223
Mounting: SMD
Kind of package: tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 490 Stücke:
Lieferzeit 14-21 Tag (e)
117+0.61 EUR
233+0.31 EUR
307+0.23 EUR
388+0.18 EUR
414+0.17 EUR
Mindestbestellmenge: 117
Im Einkaufswagen  Stück im Wert von  UAH
WMT4N65D1B WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 2.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMX3N150D1 WMX3N150D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 90W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 90W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 5.7Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 155 Stücke:
Lieferzeit 14-21 Tag (e)
42+1.72 EUR
47+1.54 EUR
57+1.26 EUR
61+1.19 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
WMX4N150D1 WMX4N150D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 4A; Idm: 16A; 90W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 90W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 5.4Ω
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 247 Stücke:
Lieferzeit 14-21 Tag (e)
41+1.76 EUR
46+1.59 EUR
57+1.27 EUR
60+1.20 EUR
Mindestbestellmenge: 41
Im Einkaufswagen  Stück im Wert von  UAH
WMZ13N65EM WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 6.5A; Idm: 35A; 85W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.5A
Pulsed drain current: 35A
Power dissipation: 85W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 20.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMZ26N65C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMZ36N65C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMZ53N60F2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 26A; Idm: 90A; 280W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 280W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WS05-4RUL WAYON Transient Voltage Suppressor; protects 4 I/O lines; 400W; 20A; 5V; -55°C~125°C; Odpowiednik: WWS05-4RUL; WS05-4RUL SOT23-6 UIWS05-4rul
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
40+0.87 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC004065NPD WAYON Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SiC; SMD; 650V; 4A; tape
Type of diode: Schottky rectifying
Case: DFN5x6
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 1.38V
Leakage current: 0.8µA
Max. forward impulse current: 30A
Kind of package: tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC005120NNI WSRSIC005120NNI WAYON Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220ACIns; Ir: 1uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: TO220ACIns
Max. forward voltage: 1.4V
Max. forward impulse current: 43A
Leakage current: 1µA
Kind of package: tube
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.15 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC006065NNI WSRSIC006065NNI WAYON Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220ACIns; Ir: 1uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220ACIns
Max. forward voltage: 1.38V
Max. forward impulse current: 40A
Leakage current: 1µA
Kind of package: tube
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
32+2.27 EUR
35+2.04 EUR
40+1.79 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC006065NPC WSRSIC006065NPC WAYON Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; Ir: 1uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.38V
Max. forward impulse current: 50A
Leakage current: 1µA
Kind of package: tube
auf Bestellung 86 Stücke:
Lieferzeit 14-21 Tag (e)
50+1.44 EUR
56+1.29 EUR
69+1.05 EUR
73+0.99 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC006065NPD WAYON Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SiC; SMD; 650V; 6A; tape
Type of diode: Schottky rectifying
Case: DFN5x6
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 1.38V
Leakage current: 1µA
Max. forward impulse current: 40A
Kind of package: tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC006065NPE WAYON Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8; SiC; SMD; 650V; 6A; tape
Type of diode: Schottky rectifying
Case: DFN8x8
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 1.38V
Leakage current: 1µA
Max. forward impulse current: 40A
Kind of package: tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC006065NPF WSRSIC006065NPF WAYON Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; Ir: 1uA
Type of diode: Schottky rectifying
Case: TO220FP-2
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 1.38V
Leakage current: 1µA
Max. forward impulse current: 40A
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC006065NPO WAYON Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 6A; tape
Type of diode: Schottky rectifying
Case: DPAK
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 1.38V
Leakage current: 1µA
Max. forward impulse current: 40A
Kind of package: tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC008065NNI WSRSIC008065NNI WAYON Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ACIns; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ACIns
Max. forward voltage: 1.38V
Max. forward impulse current: 50A
Leakage current: 1.2µA
Kind of package: tube
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
32+2.30 EUR
43+1.69 EUR
46+1.59 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC008065NPC WSRSIC008065NPC WAYON Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ir: 1.2uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.38V
Max. forward impulse current: 65A
Leakage current: 1.2µA
Kind of package: tube
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
46+1.56 EUR
Mindestbestellmenge: 46
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC008065NPF WSRSIC008065NPF WAYON Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220FP-2; Ir: 1.2uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.38V
Max. forward impulse current: 50A
Leakage current: 1.2µA
Kind of package: tube
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
29+2.46 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC010065NNI WSRSIC010065NNI WAYON Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ACIns; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220ACIns
Max. forward voltage: 1.38V
Max. forward impulse current: 70A
Leakage current: 1.5µA
Kind of package: tube
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.46 EUR
30+2.43 EUR
32+2.30 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC010065NPC WSRSIC010065NPC WAYON Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; Ir: 1.5uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.38V
Max. forward impulse current: 75A
Leakage current: 1.5µA
Kind of package: tube
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
35+2.06 EUR
39+1.87 EUR
40+1.79 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC010065NPF WSRSIC010065NPF WAYON Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.38V
Max. forward impulse current: 70A
Leakage current: 1.5µA
Kind of package: tube
auf Bestellung 49 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.25 EUR
32+2.27 EUR
34+2.14 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC020065NP4 WSRSIC020065NP4 WAYON Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; Ir: 3uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.32V
Max. forward impulse current: 170A
Leakage current: 3µA
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC020065NPC WSRSIC020065NPC WAYON Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220-2; Ir: 6uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.38V
Max. forward impulse current: 152A
Leakage current: 6µA
Kind of package: tube
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
23+3.22 EUR
31+2.35 EUR
33+2.22 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC040120NP4 WSRSIC040120NP4 WAYON Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; Ir: 15uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.4V
Max. forward impulse current: 325A
Leakage current: 15µA
Kind of package: tube
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
7+11.75 EUR
9+8.11 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC060120NP4 WSRSIC060120NP4 WAYON Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 60A; TO247-2; Ir: 25uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.4V
Max. forward impulse current: 340A
Leakage current: 25µA
Kind of package: tube
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
5+15.40 EUR
7+10.70 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
WMT04P06TS
WMT04P06TS
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; SOT223
Case: SOT223
Mounting: SMD
Kind of package: tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
93+0.77 EUR
222+0.32 EUR
293+0.24 EUR
371+0.19 EUR
394+0.18 EUR
Mindestbestellmenge: 93
Im Einkaufswagen  Stück im Wert von  UAH
WMT04P10TS
WMT04P10TS
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; SOT223
Case: SOT223
Mounting: SMD
Kind of package: tape
Type of transistor: P-MOSFET
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 490 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
240+0.30 EUR
266+0.27 EUR
338+0.21 EUR
355+0.20 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
WMT05N10T1
WMT05N10T1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; SOT223
Case: SOT223
Mounting: SMD
Kind of package: tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 400 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
95+0.76 EUR
226+0.32 EUR
298+0.24 EUR
376+0.19 EUR
397+0.18 EUR
Mindestbestellmenge: 95
Im Einkaufswagen  Stück im Wert von  UAH
WMT05N12TS
WMT05N12TS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; SOT223
Case: SOT223
Mounting: SMD
Kind of package: tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
117+0.61 EUR
223+0.32 EUR
247+0.29 EUR
313+0.23 EUR
329+0.22 EUR
Mindestbestellmenge: 117
Im Einkaufswagen  Stück im Wert von  UAH
WMT07N03T1
WMT07N03T1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; SOT223
Case: SOT223
Mounting: SMD
Kind of package: tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
112+0.64 EUR
300+0.24 EUR
424+0.17 EUR
477+0.15 EUR
500+0.14 EUR
Mindestbestellmenge: 112
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WMT07N06TS
WMT07N06TS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; SOT223
Case: SOT223
Mounting: SMD
Kind of package: tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
105+0.69 EUR
249+0.29 EUR
325+0.22 EUR
410+0.17 EUR
435+0.16 EUR
Mindestbestellmenge: 105
Im Einkaufswagen  Stück im Wert von  UAH
WMT07N10TS
WMT07N10TS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; SOT223
Case: SOT223
Mounting: SMD
Kind of package: tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Kind of channel: enhancement
auf Bestellung 490 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
117+0.61 EUR
233+0.31 EUR
307+0.23 EUR
388+0.18 EUR
414+0.17 EUR
Mindestbestellmenge: 117
Im Einkaufswagen  Stück im Wert von  UAH
WMT4N65D1B
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 2.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMX3N150D1
WMX3N150D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 90W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 90W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 5.7Ω
Mounting: THT
Gate charge: 40nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 155 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
42+1.72 EUR
47+1.54 EUR
57+1.26 EUR
61+1.19 EUR
Mindestbestellmenge: 42
Im Einkaufswagen  Stück im Wert von  UAH
WMX4N150D1
WMX4N150D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 4A; Idm: 16A; 90W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 90W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 5.4Ω
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 247 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
41+1.76 EUR
46+1.59 EUR
57+1.27 EUR
60+1.20 EUR
Mindestbestellmenge: 41
Im Einkaufswagen  Stück im Wert von  UAH
WMZ13N65EM
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 6.5A; Idm: 35A; 85W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.5A
Pulsed drain current: 35A
Power dissipation: 85W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 20.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMZ26N65C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMZ36N65C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMZ53N60F2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 26A; Idm: 90A; 280W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 280W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WS05-4RUL
Hersteller: WAYON
Transient Voltage Suppressor; protects 4 I/O lines; 400W; 20A; 5V; -55°C~125°C; Odpowiednik: WWS05-4RUL; WS05-4RUL SOT23-6 UIWS05-4rul
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
40+0.87 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC004065NPD
Hersteller: WAYON
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SiC; SMD; 650V; 4A; tape
Type of diode: Schottky rectifying
Case: DFN5x6
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Max. forward voltage: 1.38V
Leakage current: 0.8µA
Max. forward impulse current: 30A
Kind of package: tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC005120NNI
WSRSIC005120NNI
Hersteller: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220ACIns; Ir: 1uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: TO220ACIns
Max. forward voltage: 1.4V
Max. forward impulse current: 43A
Leakage current: 1µA
Kind of package: tube
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.15 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC006065NNI
WSRSIC006065NNI
Hersteller: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220ACIns; Ir: 1uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220ACIns
Max. forward voltage: 1.38V
Max. forward impulse current: 40A
Leakage current: 1µA
Kind of package: tube
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.27 EUR
35+2.04 EUR
40+1.79 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC006065NPC
WSRSIC006065NPC
Hersteller: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220-2; Ir: 1uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.38V
Max. forward impulse current: 50A
Leakage current: 1µA
Kind of package: tube
auf Bestellung 86 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
50+1.44 EUR
56+1.29 EUR
69+1.05 EUR
73+0.99 EUR
Mindestbestellmenge: 50
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC006065NPD
Hersteller: WAYON
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SiC; SMD; 650V; 6A; tape
Type of diode: Schottky rectifying
Case: DFN5x6
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 1.38V
Leakage current: 1µA
Max. forward impulse current: 40A
Kind of package: tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC006065NPE
Hersteller: WAYON
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8; SiC; SMD; 650V; 6A; tape
Type of diode: Schottky rectifying
Case: DFN8x8
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 1.38V
Leakage current: 1µA
Max. forward impulse current: 40A
Kind of package: tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC006065NPF
WSRSIC006065NPF
Hersteller: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; Ir: 1uA
Type of diode: Schottky rectifying
Case: TO220FP-2
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 1.38V
Leakage current: 1µA
Max. forward impulse current: 40A
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC006065NPO
Hersteller: WAYON
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 6A; tape
Type of diode: Schottky rectifying
Case: DPAK
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 6A
Semiconductor structure: single diode
Max. forward voltage: 1.38V
Leakage current: 1µA
Max. forward impulse current: 40A
Kind of package: tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC008065NNI
WSRSIC008065NNI
Hersteller: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ACIns; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ACIns
Max. forward voltage: 1.38V
Max. forward impulse current: 50A
Leakage current: 1.2µA
Kind of package: tube
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.30 EUR
43+1.69 EUR
46+1.59 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC008065NPC
WSRSIC008065NPC
Hersteller: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ir: 1.2uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.38V
Max. forward impulse current: 65A
Leakage current: 1.2µA
Kind of package: tube
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
46+1.56 EUR
Mindestbestellmenge: 46
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC008065NPF
WSRSIC008065NPF
Hersteller: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220FP-2; Ir: 1.2uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.38V
Max. forward impulse current: 50A
Leakage current: 1.2µA
Kind of package: tube
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
29+2.46 EUR
Mindestbestellmenge: 29
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC010065NNI
WSRSIC010065NNI
Hersteller: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220ACIns; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220ACIns
Max. forward voltage: 1.38V
Max. forward impulse current: 70A
Leakage current: 1.5µA
Kind of package: tube
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
21+3.46 EUR
30+2.43 EUR
32+2.30 EUR
Mindestbestellmenge: 21
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC010065NPC
WSRSIC010065NPC
Hersteller: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220-2; Ir: 1.5uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.38V
Max. forward impulse current: 75A
Leakage current: 1.5µA
Kind of package: tube
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
35+2.06 EUR
39+1.87 EUR
40+1.79 EUR
Mindestbestellmenge: 35
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC010065NPF
WSRSIC010065NPF
Hersteller: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 10A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.38V
Max. forward impulse current: 70A
Leakage current: 1.5µA
Kind of package: tube
auf Bestellung 49 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.25 EUR
32+2.27 EUR
34+2.14 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC020065NP4
WSRSIC020065NP4
Hersteller: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; Ir: 3uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.32V
Max. forward impulse current: 170A
Leakage current: 3µA
Kind of package: tube
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC020065NPC
WSRSIC020065NPC
Hersteller: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220-2; Ir: 6uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 20A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.38V
Max. forward impulse current: 152A
Leakage current: 6µA
Kind of package: tube
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.22 EUR
31+2.35 EUR
33+2.22 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC040120NP4
WSRSIC040120NP4
Hersteller: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; Ir: 15uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 40A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.4V
Max. forward impulse current: 325A
Leakage current: 15µA
Kind of package: tube
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.75 EUR
9+8.11 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC060120NP4
WSRSIC060120NP4
Hersteller: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 60A; TO247-2; Ir: 25uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.4V
Max. forward impulse current: 340A
Leakage current: 25µA
Kind of package: tube
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.40 EUR
7+10.70 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
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