| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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|---|---|---|---|---|---|---|---|---|---|---|---|
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WMX4N150D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 4A; Idm: 16A; 90W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 1.5kV Drain current: 4A Pulsed drain current: 16A Power dissipation: 90W Case: TO3PF Gate-source voltage: ±30V On-state resistance: 5.4Ω Mounting: THT Gate charge: 41nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 111 Stücke: Lieferzeit 14-21 Tag (e) |
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| WMZ13N65EM | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 6.5A; Idm: 35A; 85W Type of transistor: N-MOSFET Technology: WMOS™ EM Polarisation: unipolar Drain-source voltage: 650V Drain current: 6.5A Pulsed drain current: 35A Power dissipation: 85W Case: DFN8x8 Gate-source voltage: ±30V On-state resistance: 390mΩ Mounting: SMD Gate charge: 20.3nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| WMZ26N65C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.5A Pulsed drain current: 40A Power dissipation: 135W Case: DFN8x8 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 22.1nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| WMZ36N65C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 20A; Idm: 100A; 277W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Pulsed drain current: 100A Power dissipation: 277W Case: DFN8x8 Gate-source voltage: ±30V On-state resistance: 97mΩ Mounting: SMD Gate charge: 16nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| WMZ53N60F2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 26A; Idm: 90A; 280W Type of transistor: N-MOSFET Technology: WMOS™ F2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 26A Pulsed drain current: 90A Power dissipation: 280W Case: DFN8x8 Gate-source voltage: ±30V On-state resistance: 78mΩ Mounting: SMD Gate charge: 58nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| WS05-4RUL | WAYON |
Transient Voltage Suppressor; protects 4 I/O lines; 400W; 20A; 5V; -55°C~125°C; Odpowiednik: WWS05-4RUL; WS05-4RUL SOT23-6 UIWS05-4rul Anzahl je Verpackung: 100 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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| WS05-4RUL | WAYON |
Transient Voltage Suppressor; protects 4 I/O lines; 400W; 20A; 5V; -55°C~125°C; Odpowiednik: WWS05-4RUL; WS05-4RUL SOT23-6 UIWS05-4rul Anzahl je Verpackung: 100 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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| WSRSIC004065NPD | WAYON |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5x6; SiC; SMD; 650V; 4A; tape Mounting: SMD Kind of package: tape Type of diode: Schottky rectifying Technology: SiC Semiconductor structure: single diode Leakage current: 0.8µA Max. forward voltage: 1.38V Load current: 4A Max. forward impulse current: 30A Max. off-state voltage: 650V Case: DFN5x6 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
 |
WSRSIC004065NPF | WAYON |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; Ir: 0.8uA Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Semiconductor structure: single diode Leakage current: 0.8µA Max. forward voltage: 1.38V Load current: 4A Max. forward impulse current: 30A Max. off-state voltage: 650V Case: TO220FP-2 |
auf Bestellung 79 Stücke: Lieferzeit 14-21 Tag (e) |
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| WSRSIC004065NPO | WAYON |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 4A; tape Mounting: SMD Kind of package: tape Type of diode: Schottky rectifying Technology: SiC Semiconductor structure: single diode Leakage current: 0.8µA Max. forward voltage: 1.38V Load current: 4A Max. forward impulse current: 30A Max. off-state voltage: 650V Case: DPAK |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| WSRSIC004120NPO | WAYON |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 4A; tape Mounting: SMD Kind of package: tape Type of diode: Schottky rectifying Technology: SiC Semiconductor structure: single diode Leakage current: 1.5µA Max. forward voltage: 1.36V Load current: 4A Max. forward impulse current: 30A Max. off-state voltage: 1.2kV Case: DPAK |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
 |
WSRSIC008065NNI | WAYON |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ACIns; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220ACIns Max. forward voltage: 1.38V Max. forward impulse current: 50A Leakage current: 1.2µA Kind of package: tube |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
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WSRSIC008065NPC | WAYON |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ir: 1.2uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.38V Max. forward impulse current: 65A Leakage current: 1.2µA Kind of package: tube |
auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
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WSRSIC008065NPF | WAYON |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220FP-2; Ir: 1.2uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 8A Semiconductor structure: single diode Case: TO220FP-2 Max. forward voltage: 1.38V Max. forward impulse current: 50A Leakage current: 1.2µA Kind of package: tube |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
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| X0405-600AM | WAYON |
 Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 4A; Igt: 0.2mA; TO252; SMD; reel,tape Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 4A Gate current: 0.2mA Case: TO252 Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 30A Features of semiconductor devices: sensitive gate |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| X0405-600AV | WAYON |
Category: SMD/THT thyristors Description: Thyristor; 600V; Ifmax: 4A; Igt: 0.2mA; TO126; THT; tube; Ifsm: 30A Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 4A Gate current: 0.2mA Case: TO126 Mounting: THT Kind of package: tube Max. forward impulse current: 30A Features of semiconductor devices: sensitive gate |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| X0405-610AM | WAYON |
Category: SMD/THT thyristors Description: Thyristor; 600V; Ifmax: 4A; Igt: 0.2mA; TO252; SMD; reel,tape Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 4A Gate current: 0.2mA Case: TO252 Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 30A Features of semiconductor devices: sensitive gate |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
| Транзистор WMK20N65C2 | WAYON | Транзистор польовий TO220-3 MOSFET n-ch Vds=650V, Id=15A, Rds=0,300 Ohm, Pd=86W |
auf Bestellung 82 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| WMX4N150D1 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 4A; Idm: 16A; 90W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 90W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 5.4Ω
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 4A; Idm: 16A; 90W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 90W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 5.4Ω
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 111 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 46+ | 1.56 EUR |
| 52+ | 1.4 EUR |
| 57+ | 1.26 EUR |
| WMZ13N65EM |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 6.5A; Idm: 35A; 85W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.5A
Pulsed drain current: 35A
Power dissipation: 85W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 20.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 6.5A; Idm: 35A; 85W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6.5A
Pulsed drain current: 35A
Power dissipation: 85W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 20.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMZ26N65C4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMZ36N65C4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMZ53N60F2 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 26A; Idm: 90A; 280W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 280W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 26A; Idm: 90A; 280W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 280W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WS05-4RUL |
Hersteller: WAYON
Transient Voltage Suppressor; protects 4 I/O lines; 400W; 20A; 5V; -55°C~125°C; Odpowiednik: WWS05-4RUL; WS05-4RUL SOT23-6 UIWS05-4rul
Anzahl je Verpackung: 100 Stücke
Transient Voltage Suppressor; protects 4 I/O lines; 400W; 20A; 5V; -55°C~125°C; Odpowiednik: WWS05-4RUL; WS05-4RUL SOT23-6 UIWS05-4rul
Anzahl je Verpackung: 100 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 100+ | 0.5 EUR |
| WS05-4RUL |
Hersteller: WAYON
Transient Voltage Suppressor; protects 4 I/O lines; 400W; 20A; 5V; -55°C~125°C; Odpowiednik: WWS05-4RUL; WS05-4RUL SOT23-6 UIWS05-4rul
Anzahl je Verpackung: 100 Stücke
Transient Voltage Suppressor; protects 4 I/O lines; 400W; 20A; 5V; -55°C~125°C; Odpowiednik: WWS05-4RUL; WS05-4RUL SOT23-6 UIWS05-4rul
Anzahl je Verpackung: 100 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 100+ | 0.5 EUR |
| WSRSIC004065NPD |
Hersteller: WAYON
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SiC; SMD; 650V; 4A; tape
Mounting: SMD
Kind of package: tape
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Leakage current: 0.8µA
Max. forward voltage: 1.38V
Load current: 4A
Max. forward impulse current: 30A
Max. off-state voltage: 650V
Case: DFN5x6
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SiC; SMD; 650V; 4A; tape
Mounting: SMD
Kind of package: tape
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Leakage current: 0.8µA
Max. forward voltage: 1.38V
Load current: 4A
Max. forward impulse current: 30A
Max. off-state voltage: 650V
Case: DFN5x6
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WSRSIC004065NPF |
Hersteller: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; Ir: 0.8uA
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Leakage current: 0.8µA
Max. forward voltage: 1.38V
Load current: 4A
Max. forward impulse current: 30A
Max. off-state voltage: 650V
Case: TO220FP-2
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; Ir: 0.8uA
Mounting: THT
Kind of package: tube
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Leakage current: 0.8µA
Max. forward voltage: 1.38V
Load current: 4A
Max. forward impulse current: 30A
Max. off-state voltage: 650V
Case: TO220FP-2
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 52+ | 1.4 EUR |
| 57+ | 1.26 EUR |
| 65+ | 1.1 EUR |
| WSRSIC004065NPO |
Hersteller: WAYON
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 4A; tape
Mounting: SMD
Kind of package: tape
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Leakage current: 0.8µA
Max. forward voltage: 1.38V
Load current: 4A
Max. forward impulse current: 30A
Max. off-state voltage: 650V
Case: DPAK
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 4A; tape
Mounting: SMD
Kind of package: tape
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Leakage current: 0.8µA
Max. forward voltage: 1.38V
Load current: 4A
Max. forward impulse current: 30A
Max. off-state voltage: 650V
Case: DPAK
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WSRSIC004120NPO |
Hersteller: WAYON
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 4A; tape
Mounting: SMD
Kind of package: tape
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Leakage current: 1.5µA
Max. forward voltage: 1.36V
Load current: 4A
Max. forward impulse current: 30A
Max. off-state voltage: 1.2kV
Case: DPAK
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 4A; tape
Mounting: SMD
Kind of package: tape
Type of diode: Schottky rectifying
Technology: SiC
Semiconductor structure: single diode
Leakage current: 1.5µA
Max. forward voltage: 1.36V
Load current: 4A
Max. forward impulse current: 30A
Max. off-state voltage: 1.2kV
Case: DPAK
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WSRSIC008065NNI |
Hersteller: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ACIns; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ACIns
Max. forward voltage: 1.38V
Max. forward impulse current: 50A
Leakage current: 1.2µA
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ACIns; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ACIns
Max. forward voltage: 1.38V
Max. forward impulse current: 50A
Leakage current: 1.2µA
Kind of package: tube
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 34+ | 2.16 EUR |
| 37+ | 1.96 EUR |
| 50+ | 1.73 EUR |
| WSRSIC008065NPC |
Hersteller: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ir: 1.2uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.38V
Max. forward impulse current: 65A
Leakage current: 1.2µA
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ir: 1.2uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.38V
Max. forward impulse current: 65A
Leakage current: 1.2µA
Kind of package: tube
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 12+ | 5.96 EUR |
| WSRSIC008065NPF |
Hersteller: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220FP-2; Ir: 1.2uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.38V
Max. forward impulse current: 50A
Leakage current: 1.2µA
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220FP-2; Ir: 1.2uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.38V
Max. forward impulse current: 50A
Leakage current: 1.2µA
Kind of package: tube
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 8.94 EUR |
| X0405-600AM |
|
Hersteller: WAYON
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 4A; Igt: 0.2mA; TO252; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 4A
Gate current: 0.2mA
Case: TO252
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 30A
Features of semiconductor devices: sensitive gate
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 4A; Igt: 0.2mA; TO252; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 4A
Gate current: 0.2mA
Case: TO252
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 30A
Features of semiconductor devices: sensitive gate
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| X0405-600AV |
|
Hersteller: WAYON
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 4A; Igt: 0.2mA; TO126; THT; tube; Ifsm: 30A
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 4A
Gate current: 0.2mA
Case: TO126
Mounting: THT
Kind of package: tube
Max. forward impulse current: 30A
Features of semiconductor devices: sensitive gate
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 4A; Igt: 0.2mA; TO126; THT; tube; Ifsm: 30A
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 4A
Gate current: 0.2mA
Case: TO126
Mounting: THT
Kind of package: tube
Max. forward impulse current: 30A
Features of semiconductor devices: sensitive gate
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| X0405-610AM |
Hersteller: WAYON
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 4A; Igt: 0.2mA; TO252; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 4A
Gate current: 0.2mA
Case: TO252
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 30A
Features of semiconductor devices: sensitive gate
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 4A; Igt: 0.2mA; TO252; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 4A
Gate current: 0.2mA
Case: TO252
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 30A
Features of semiconductor devices: sensitive gate
Produkt ist nicht verfügbar
Im Einkaufswagen
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| Транзистор WMK20N65C2 |
Hersteller: WAYON
Транзистор польовий TO220-3 MOSFET n-ch Vds=650V, Id=15A, Rds=0,300 Ohm, Pd=86W
Транзистор польовий TO220-3 MOSFET n-ch Vds=650V, Id=15A, Rds=0,300 Ohm, Pd=86W
auf Bestellung 82 Stücke:
Lieferzeit 14-21 Tag (e)Im Einkaufswagen Stück im Wert von UAH