| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
| WMO18N50C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 10A; Idm: 50A; 75W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 500V Drain current: 10A Pulsed drain current: 50A Power dissipation: 75W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.3Ω Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| WMO18N65EM | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 8.6A; Idm: 43A; 125W Type of transistor: N-MOSFET Technology: WMOS™ EM Polarisation: unipolar Drain-source voltage: 650V Drain current: 8.6A Pulsed drain current: 43A Power dissipation: 125W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 26nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| WMO18P10TS | WAYON | WMO18P10TS-CYG SMD P channel transistors |
auf Bestellung 113 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||
|
WMO190N03TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 190A; Idm: 760A; 166.7W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Case: TO252 Gate-source voltage: ±20V On-state resistance: 3mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Power dissipation: 166.7W Drain current: 190A Pulsed drain current: 760A Gate charge: 0.1µC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| WMO190N15HG4 | WAYON | WMO190N15HG4-CYG SMD N channel transistors |
auf Bestellung 78 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||
| WMO20N15T2 | WAYON | WMO20N15T2-CYG SMD N channel transistors |
auf Bestellung 433 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||
| WMO20N20JN | WAYON | WMO20N20JN-CYG SMD N channel transistors |
auf Bestellung 400 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||
| WMO20N65EM | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; TO252 Type of transistor: N-MOSFET Technology: WMOS™ EM Polarisation: unipolar Drain-source voltage: 650V Case: TO252 On-state resistance: 0.24Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| WMO20P04T1 | WAYON | WMO20P04T1-CYG SMD P channel transistors |
auf Bestellung 2260 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||
| WMO20P15TS | WAYON | WMO20P15TS-CYG SMD P channel transistors |
auf Bestellung 152 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||
| WMO22N50C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 11A; Idm: 60A; 86W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 500V Drain current: 11A Pulsed drain current: 60A Power dissipation: 86W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.27Ω Mounting: SMD Gate charge: 14.6nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
|
WMO240N10LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 36A; Idm: 144A; 56.8W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 36A Pulsed drain current: 144A Power dissipation: 56.8W Case: TO252 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Gate charge: 15.8nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2120 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
WMO240N10LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 36A; Idm: 144A; 56.8W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 36A Pulsed drain current: 144A Power dissipation: 56.8W Case: TO252 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Gate charge: 15.8nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2120 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
|
WMO25N06TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 41.7W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 25A Pulsed drain current: 100A Power dissipation: 41.7W Case: TO252 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1885 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
WMO25N06TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 41.7W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 25A Pulsed drain current: 100A Power dissipation: 41.7W Case: TO252 Gate-source voltage: ±20V On-state resistance: 32mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 1885 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
| WMO25N10T1 | WAYON | WMO25N10T1-CYG SMD N channel transistors |
auf Bestellung 409 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||
| WMO25N50C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 13A; Idm: 65A; 135W Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 500V Drain current: 13A Pulsed drain current: 65A Power dissipation: 135W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.16Ω Mounting: SMD Gate charge: 22.1nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| WMO25P03TS | WAYON | WMO25P03TS-CYG SMD P channel transistors |
auf Bestellung 500 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||
| WMO25P04TS | WAYON | WMO25P04TS-CYG SMD P channel transistors |
auf Bestellung 498 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||
| WMO26N60C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.5A Power dissipation: 135W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 40A Gate charge: 22.1nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| WMO26N65C4 | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.5A Power dissipation: 135W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 40A Gate charge: 22.1nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| WMO26N65F2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 10.5A; Idm: 40A Type of transistor: N-MOSFET Technology: WMOS™ F2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.5A Pulsed drain current: 40A Power dissipation: 135W Case: TO252 Gate-source voltage: ±30V On-state resistance: 0.21Ω Mounting: SMD Gate charge: 22.1nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| WMO28N15T2 | WAYON | WMO28N15T2-CYG SMD N channel transistors |
auf Bestellung 8 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||
| WMO30N25JN | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 250V; 12A; Idm: 63A; 59W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 250V Drain current: 12A Pulsed drain current: 63A Power dissipation: 59W Case: TO252 Gate-source voltage: ±20V On-state resistance: 99mΩ Mounting: SMD Gate charge: 9.8nC Kind of package: reel; tape Kind of channel: enhancement Reverse recovery time: 133ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| WMO30P03TS | WAYON | WMO30P03TS-CYG SMD P channel transistors |
auf Bestellung 353 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||
|
WMO30P10TS | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -35A; Idm: -140A; 119W; TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -35A Pulsed drain current: -140A Power dissipation: 119W Case: TO252 Gate-source voltage: ±20V On-state resistance: 50mΩ Mounting: SMD Gate charge: 115nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 127 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
WMO30P10TS | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -35A; Idm: -140A; 119W; TO252 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -35A Pulsed drain current: -140A Power dissipation: 119W Case: TO252 Gate-source voltage: ±20V On-state resistance: 50mΩ Mounting: SMD Gate charge: 115nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 127 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
| WMO35N06T1 | WAYON | WMO35N06T1-CYG SMD N channel transistors |
auf Bestellung 428 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||
| WMO35P04T1 | WAYON | WMO35P04T1-CYG SMD P channel transistors |
auf Bestellung 249 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||
| WMO35P06TS | WAYON | WMO35P06TS-CYG SMD P channel transistors |
auf Bestellung 47 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||
|
WMO40N04TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 160A; 33W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 40A Pulsed drain current: 160A Power dissipation: 33W Case: TO252 Gate-source voltage: ±20V On-state resistance: 12.5mΩ Mounting: SMD Gate charge: 22.2nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 361 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
WMO40N04TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 160A; 33W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 40A Pulsed drain current: 160A Power dissipation: 33W Case: TO252 Gate-source voltage: ±20V On-state resistance: 12.5mΩ Mounting: SMD Gate charge: 22.2nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 361 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
| WMO40N20JN | WAYON |
Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 200V; 21A; Idm: 110A; 89W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 21A Pulsed drain current: 110A Power dissipation: 89W Case: TO252 Gate-source voltage: ±20V On-state resistance: 46mΩ Mounting: SMD Gate charge: 7.7nC Kind of package: reel; tape Kind of channel: enhancement Reverse recovery time: 141ns |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| WMO4N65D1B | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 77W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4A Pulsed drain current: 16A Power dissipation: 77W Case: TO252 Gate-source voltage: ±30V On-state resistance: 2.2Ω Mounting: SMD Gate charge: 14.5nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| WMO4N80D1B | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 96W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 800V Drain current: 4A Pulsed drain current: 16A Power dissipation: 96W Case: TO252 Gate-source voltage: ±30V On-state resistance: 3.5Ω Mounting: SMD Gate charge: 13nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| WMO4N90D1C | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 900V; 4A; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 900V Drain current: 4A Case: TO252 Gate-source voltage: ±30V On-state resistance: 4.8Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
|
WMO50N06TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 69.4W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 200A Power dissipation: 69.4W Case: TO252 Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Gate charge: 46nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 279 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
WMO50N06TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 69.4W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 50A Pulsed drain current: 200A Power dissipation: 69.4W Case: TO252 Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Gate charge: 46nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 279 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
| WMO50P04T1 | WAYON | WMO50P04T1-CYG SMD P channel transistors |
auf Bestellung 174 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||
| WMO55N03T1 | WAYON | WMO55N03T1-CYG SMD N channel transistors |
auf Bestellung 429 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||
| WMO5N50D1B | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 5A; Idm: 20A; 45W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 500V Drain current: 5A Pulsed drain current: 20A Power dissipation: 45W Case: TO252 Gate-source voltage: ±30V On-state resistance: 1.35Ω Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
|
WMO60N02T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 60A; Idm: 240A; 35.7W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 60A Pulsed drain current: 240A Power dissipation: 35.7W Case: TO252 Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 2553 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
WMO60N02T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 60A; Idm: 240A; 35.7W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 60A Pulsed drain current: 240A Power dissipation: 35.7W Case: TO252 Gate-source voltage: ±20V On-state resistance: 6mΩ Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2553 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
|
WMO60N04T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 60A; Idm: 240A; 46.2W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 60A Pulsed drain current: 240A Power dissipation: 46.2W Case: TO252 Gate-source voltage: ±20V On-state resistance: 7.2mΩ Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 454 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
WMO60N04T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 60A; Idm: 240A; 46.2W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 60A Pulsed drain current: 240A Power dissipation: 46.2W Case: TO252 Gate-source voltage: ±20V On-state resistance: 7.2mΩ Mounting: SMD Gate charge: 36nC Kind of package: reel; tape Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
auf Bestellung 454 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
| WMO60P02TS | WAYON | WMO60P02TS-CYG SMD P channel transistors |
auf Bestellung 457 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||
| WMO60P03TS | WAYON | WMO60P03TS-CYG SMD P channel transistors |
auf Bestellung 400 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||
| WMO690N15HG2 | WAYON | WMO690N15HG2-CYG SMD N channel transistors |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||
| WMO75N04T1 | WAYON | WMO75N04T1-CYG SMD N channel transistors |
auf Bestellung 435 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||
| WMO7N65D1B | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 7A; Idm: 28A; 150W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 7A Pulsed drain current: 28A Power dissipation: 150W Case: TO252 Gate-source voltage: ±30V On-state resistance: 1.35Ω Mounting: SMD Gate charge: 24.3nC Kind of package: reel; tape Kind of channel: enhancement Technology: WMOS™ D1 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||
| WMO80N03T1 | WAYON | WMO80N03T1-CYG SMD N channel transistors |
auf Bestellung 324 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||
|
WMO80N06TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 80A; Idm: 320A; 92W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 80A Pulsed drain current: 320A Power dissipation: 92W Case: TO252 Gate-source voltage: ±20V On-state resistance: 8mΩ Mounting: SMD Gate charge: 67nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
| WMO80N08TS | WAYON | WMO80N08TS-CYG SMD N channel transistors |
auf Bestellung 13 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||
| WMO80P04TS | WAYON | WMO80P04TS-CYG SMD P channel transistors |
auf Bestellung 13 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||
|
WMO90N02T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 90A; Idm: 222A; 39W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Case: TO252 Gate-source voltage: ±10V On-state resistance: 4.5mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Power dissipation: 39W Drain current: 90A Pulsed drain current: 222A Gate charge: 0.1µC |
auf Bestellung 442 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||
|
WMO90N02T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 90A; Idm: 222A; 39W; TO252 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Case: TO252 Gate-source voltage: ±10V On-state resistance: 4.5mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Power dissipation: 39W Drain current: 90A Pulsed drain current: 222A Gate charge: 0.1µC Anzahl je Verpackung: 1 Stücke |
auf Bestellung 442 Stücke: Lieferzeit 7-14 Tag (e) |
|
||||||||||||
| WMO95P06TS | WAYON | WMO95P06TS-CYG SMD P channel transistors |
auf Bestellung 1897 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||
| WMO96N03T1 | WAYON | WMO96N03T1-CYG SMD N channel transistors |
auf Bestellung 289 Stücke: Lieferzeit 7-14 Tag (e) |
|
|||||||||||||
|
WMP04N60C2 | WAYON |
Category: THT N channel transistorsDescription: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 3A; 29W; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 3A Power dissipation: 29W Case: TO251 Gate-source voltage: ±30V On-state resistance: 1.9Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: WMOS™ C2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||
|
WMP04N65C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 3A; 29W; TO251 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 3A Power dissipation: 29W Case: TO251 Gate-source voltage: ±30V On-state resistance: 1.9Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Technology: WMOS™ C2 |
auf Bestellung 348 Stücke: Lieferzeit 14-21 Tag (e) |
|
| WMO18N50C4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 10A; Idm: 50A; 75W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10A
Pulsed drain current: 50A
Power dissipation: 75W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 10A; Idm: 50A; 75W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10A
Pulsed drain current: 50A
Power dissipation: 75W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMO18N65EM |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 8.6A; Idm: 43A; 125W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.6A
Pulsed drain current: 43A
Power dissipation: 125W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 8.6A; Idm: 43A; 125W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.6A
Pulsed drain current: 43A
Power dissipation: 125W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 26nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMO18P10TS |
Hersteller: WAYON
WMO18P10TS-CYG SMD P channel transistors
WMO18P10TS-CYG SMD P channel transistors
auf Bestellung 113 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 79+ | 0.92 EUR |
| 113+ | 0.63 EUR |
| 125+ | 0.57 EUR |
| 5000+ | 0.34 EUR |
| WMO190N03TS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 190A; Idm: 760A; 166.7W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 166.7W
Drain current: 190A
Pulsed drain current: 760A
Gate charge: 0.1µC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 190A; Idm: 760A; 166.7W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 166.7W
Drain current: 190A
Pulsed drain current: 760A
Gate charge: 0.1µC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMO190N15HG4 |
Hersteller: WAYON
WMO190N15HG4-CYG SMD N channel transistors
WMO190N15HG4-CYG SMD N channel transistors
auf Bestellung 78 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 62+ | 1.17 EUR |
| 78+ | 0.92 EUR |
| 5000+ | 0.67 EUR |
| WMO20N15T2 |
Hersteller: WAYON
WMO20N15T2-CYG SMD N channel transistors
WMO20N15T2-CYG SMD N channel transistors
auf Bestellung 433 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 79+ | 0.91 EUR |
| 189+ | 0.38 EUR |
| 200+ | 0.36 EUR |
| 5000+ | 0.34 EUR |
| WMO20N20JN |
Hersteller: WAYON
WMO20N20JN-CYG SMD N channel transistors
WMO20N20JN-CYG SMD N channel transistors
auf Bestellung 400 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 82+ | 0.87 EUR |
| 257+ | 0.28 EUR |
| 272+ | 0.26 EUR |
| 5000+ | 0.25 EUR |
| WMO20N65EM |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO252
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO252
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMO20P04T1 |
Hersteller: WAYON
WMO20P04T1-CYG SMD P channel transistors
WMO20P04T1-CYG SMD P channel transistors
auf Bestellung 2260 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 106+ | 0.68 EUR |
| 447+ | 0.16 EUR |
| 472+ | 0.15 EUR |
| WMO20P15TS |
Hersteller: WAYON
WMO20P15TS-CYG SMD P channel transistors
WMO20P15TS-CYG SMD P channel transistors
auf Bestellung 152 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 71+ | 1.02 EUR |
| 152+ | 0.47 EUR |
| 5000+ | 0.42 EUR |
| WMO22N50C4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 11A; Idm: 60A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Pulsed drain current: 60A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 14.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 11A; Idm: 60A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Pulsed drain current: 60A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 14.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMO240N10LG2 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; Idm: 144A; 56.8W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Pulsed drain current: 144A
Power dissipation: 56.8W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 15.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; Idm: 144A; 56.8W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Pulsed drain current: 144A
Power dissipation: 56.8W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 15.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2120 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 132+ | 0.54 EUR |
| 253+ | 0.28 EUR |
| 281+ | 0.25 EUR |
| 319+ | 0.22 EUR |
| 353+ | 0.2 EUR |
| WMO240N10LG2 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; Idm: 144A; 56.8W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Pulsed drain current: 144A
Power dissipation: 56.8W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 15.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; Idm: 144A; 56.8W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Pulsed drain current: 144A
Power dissipation: 56.8W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 15.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2120 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 132+ | 0.54 EUR |
| 253+ | 0.28 EUR |
| 281+ | 0.25 EUR |
| 319+ | 0.22 EUR |
| 353+ | 0.2 EUR |
| WMO25N06TS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 41.7W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 41.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 41.7W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 41.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1885 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 122+ | 0.59 EUR |
| 291+ | 0.25 EUR |
| 385+ | 0.19 EUR |
| 435+ | 0.16 EUR |
| 486+ | 0.15 EUR |
| 1000+ | 0.14 EUR |
| WMO25N06TS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 41.7W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 41.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 41.7W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 41.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1885 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 122+ | 0.59 EUR |
| 291+ | 0.25 EUR |
| 385+ | 0.19 EUR |
| 435+ | 0.16 EUR |
| 486+ | 0.15 EUR |
| 1000+ | 0.14 EUR |
| WMO25N10T1 |
Hersteller: WAYON
WMO25N10T1-CYG SMD N channel transistors
WMO25N10T1-CYG SMD N channel transistors
auf Bestellung 409 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 120+ | 0.6 EUR |
| 376+ | 0.19 EUR |
| 397+ | 0.18 EUR |
| 5000+ | 0.17 EUR |
| WMO25N50C4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 13A; Idm: 65A; 135W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 135W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 13A; Idm: 65A; 135W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 135W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMO25P03TS |
Hersteller: WAYON
WMO25P03TS-CYG SMD P channel transistors
WMO25P03TS-CYG SMD P channel transistors
auf Bestellung 500 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 114+ | 0.63 EUR |
| 432+ | 0.17 EUR |
| 455+ | 0.16 EUR |
| 5000+ | 0.15 EUR |
| WMO25P04TS |
Hersteller: WAYON
WMO25P04TS-CYG SMD P channel transistors
WMO25P04TS-CYG SMD P channel transistors
auf Bestellung 498 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 97+ | 0.74 EUR |
| 397+ | 0.18 EUR |
| 421+ | 0.17 EUR |
| 5000+ | 0.16 EUR |
| WMO26N60C4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Power dissipation: 135W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 22.1nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Power dissipation: 135W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 22.1nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMO26N65C4 |
![]() |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Power dissipation: 135W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 22.1nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Power dissipation: 135W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 22.1nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMO26N65F2 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMO28N15T2 |
Hersteller: WAYON
WMO28N15T2-CYG SMD N channel transistors
WMO28N15T2-CYG SMD N channel transistors
auf Bestellung 8 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 8+ | 8.94 EUR |
| 38+ | 1.89 EUR |
| 103+ | 0.7 EUR |
| 5000+ | 0.41 EUR |
| WMO30N25JN |
![]() |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 12A; Idm: 63A; 59W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 12A
Pulsed drain current: 63A
Power dissipation: 59W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 9.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 133ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 12A; Idm: 63A; 59W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 12A
Pulsed drain current: 63A
Power dissipation: 59W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 99mΩ
Mounting: SMD
Gate charge: 9.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 133ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMO30P03TS |
Hersteller: WAYON
WMO30P03TS-CYG SMD P channel transistors
WMO30P03TS-CYG SMD P channel transistors
auf Bestellung 353 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 94+ | 0.77 EUR |
| 353+ | 0.2 EUR |
| 5000+ | 0.17 EUR |
| WMO30P10TS |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -35A; Idm: -140A; 119W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -35A
Pulsed drain current: -140A
Power dissipation: 119W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 115nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -35A; Idm: -140A; 119W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -35A
Pulsed drain current: -140A
Power dissipation: 119W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 115nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 127 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 114+ | 0.63 EUR |
| 127+ | 0.56 EUR |
| WMO30P10TS |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -35A; Idm: -140A; 119W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -35A
Pulsed drain current: -140A
Power dissipation: 119W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 115nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -35A; Idm: -140A; 119W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -35A
Pulsed drain current: -140A
Power dissipation: 119W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 50mΩ
Mounting: SMD
Gate charge: 115nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 127 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 114+ | 0.63 EUR |
| 127+ | 0.56 EUR |
| 250+ | 0.29 EUR |
| WMO35N06T1 |
Hersteller: WAYON
WMO35N06T1-CYG SMD N channel transistors
WMO35N06T1-CYG SMD N channel transistors
auf Bestellung 428 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 117+ | 0.62 EUR |
| 365+ | 0.2 EUR |
| 385+ | 0.19 EUR |
| 5000+ | 0.18 EUR |
| WMO35P04T1 |
Hersteller: WAYON
WMO35P04T1-CYG SMD P channel transistors
WMO35P04T1-CYG SMD P channel transistors
auf Bestellung 249 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 122+ | 0.59 EUR |
| 249+ | 0.29 EUR |
| 5000+ | 0.19 EUR |
| WMO35P06TS |
Hersteller: WAYON
WMO35P06TS-CYG SMD P channel transistors
WMO35P06TS-CYG SMD P channel transistors
auf Bestellung 47 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 47+ | 1.52 EUR |
| 126+ | 0.57 EUR |
| 5000+ | 0.34 EUR |
| WMO40N04TS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 160A; 33W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 33W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 22.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 160A; 33W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 33W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 22.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 361 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 143+ | 0.5 EUR |
| 313+ | 0.23 EUR |
| 361+ | 0.2 EUR |
| WMO40N04TS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 160A; 33W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 33W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 22.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 40A; Idm: 160A; 33W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 33W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 22.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 361 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 143+ | 0.5 EUR |
| 313+ | 0.23 EUR |
| 361+ | 0.2 EUR |
| WMO40N20JN |
![]() |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 21A; Idm: 110A; 89W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 21A
Pulsed drain current: 110A
Power dissipation: 89W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 46mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 141ns
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 21A; Idm: 110A; 89W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 21A
Pulsed drain current: 110A
Power dissipation: 89W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 46mΩ
Mounting: SMD
Gate charge: 7.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 141ns
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMO4N65D1B |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 77W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
Mounting: SMD
Gate charge: 14.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; Idm: 16A; 77W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 77W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.2Ω
Mounting: SMD
Gate charge: 14.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMO4N80D1B |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 96W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 96W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 800V; 4A; Idm: 16A; 96W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 96W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMO4N90D1C |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4A; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 900V; 4A; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 900V
Drain current: 4A
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 4.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMO50N06TS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 69.4W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 69.4W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 69.4W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 69.4W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 279 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 139+ | 0.51 EUR |
| 260+ | 0.28 EUR |
| 279+ | 0.26 EUR |
| WMO50N06TS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 69.4W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 69.4W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 50A; Idm: 200A; 69.4W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 69.4W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 279 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 139+ | 0.51 EUR |
| 260+ | 0.28 EUR |
| 279+ | 0.26 EUR |
| 1000+ | 0.19 EUR |
| WMO50P04T1 |
Hersteller: WAYON
WMO50P04T1-CYG SMD P channel transistors
WMO50P04T1-CYG SMD P channel transistors
auf Bestellung 174 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 103+ | 0.7 EUR |
| 174+ | 0.41 EUR |
| 5000+ | 0.26 EUR |
| WMO55N03T1 |
Hersteller: WAYON
WMO55N03T1-CYG SMD N channel transistors
WMO55N03T1-CYG SMD N channel transistors
auf Bestellung 429 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 101+ | 0.71 EUR |
| 414+ | 0.17 EUR |
| 5000+ | 0.16 EUR |
| WMO5N50D1B |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 5A; Idm: 20A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 45W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.35Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 5A; Idm: 20A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 45W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.35Ω
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMO60N02T1 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 60A; Idm: 240A; 35.7W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 60A
Pulsed drain current: 240A
Power dissipation: 35.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 60A; Idm: 240A; 35.7W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 60A
Pulsed drain current: 240A
Power dissipation: 35.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2553 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 112+ | 0.64 EUR |
| 269+ | 0.27 EUR |
| 358+ | 0.2 EUR |
| 404+ | 0.18 EUR |
| 451+ | 0.16 EUR |
| 1000+ | 0.15 EUR |
| WMO60N02T1 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 60A; Idm: 240A; 35.7W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 60A
Pulsed drain current: 240A
Power dissipation: 35.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 60A; Idm: 240A; 35.7W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 60A
Pulsed drain current: 240A
Power dissipation: 35.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 6mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2553 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 112+ | 0.64 EUR |
| 269+ | 0.27 EUR |
| 358+ | 0.2 EUR |
| 404+ | 0.18 EUR |
| 451+ | 0.16 EUR |
| 1000+ | 0.15 EUR |
| WMO60N04T1 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 60A; Idm: 240A; 46.2W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 240A
Power dissipation: 46.2W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 60A; Idm: 240A; 46.2W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 240A
Power dissipation: 46.2W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 454 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 136+ | 0.53 EUR |
| 290+ | 0.25 EUR |
| 321+ | 0.22 EUR |
| 365+ | 0.2 EUR |
| 407+ | 0.18 EUR |
| WMO60N04T1 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 60A; Idm: 240A; 46.2W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 240A
Power dissipation: 46.2W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 60A; Idm: 240A; 46.2W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 60A
Pulsed drain current: 240A
Power dissipation: 46.2W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 454 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 136+ | 0.53 EUR |
| 290+ | 0.25 EUR |
| 321+ | 0.22 EUR |
| 365+ | 0.2 EUR |
| 407+ | 0.18 EUR |
| 1000+ | 0.17 EUR |
| WMO60P02TS |
Hersteller: WAYON
WMO60P02TS-CYG SMD P channel transistors
WMO60P02TS-CYG SMD P channel transistors
auf Bestellung 457 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 122+ | 0.59 EUR |
| 379+ | 0.19 EUR |
| 400+ | 0.18 EUR |
| 5000+ | 0.17 EUR |
| WMO60P03TS |
Hersteller: WAYON
WMO60P03TS-CYG SMD P channel transistors
WMO60P03TS-CYG SMD P channel transistors
auf Bestellung 400 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 93+ | 0.78 EUR |
| 223+ | 0.32 EUR |
| 235+ | 0.3 EUR |
| 5000+ | 0.29 EUR |
| WMO690N15HG2 |
Hersteller: WAYON
WMO690N15HG2-CYG SMD N channel transistors
WMO690N15HG2-CYG SMD N channel transistors
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 63+ | 1.14 EUR |
| 100+ | 0.72 EUR |
| 5000+ | 0.45 EUR |
| WMO75N04T1 |
Hersteller: WAYON
WMO75N04T1-CYG SMD N channel transistors
WMO75N04T1-CYG SMD N channel transistors
auf Bestellung 435 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 113+ | 0.64 EUR |
| 313+ | 0.23 EUR |
| 332+ | 0.22 EUR |
| 5000+ | 0.21 EUR |
| WMO7N65D1B |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 7A; Idm: 28A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.35Ω
Mounting: SMD
Gate charge: 24.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ D1
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 650V; 7A; Idm: 28A; 150W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 150W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.35Ω
Mounting: SMD
Gate charge: 24.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ D1
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMO80N03T1 |
Hersteller: WAYON
WMO80N03T1-CYG SMD N channel transistors
WMO80N03T1-CYG SMD N channel transistors
auf Bestellung 324 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 95+ | 0.76 EUR |
| 296+ | 0.24 EUR |
| 313+ | 0.23 EUR |
| 5000+ | 0.22 EUR |
| WMO80N06TS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; Idm: 320A; 92W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 92W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 80A; Idm: 320A; 92W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 92W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 67nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMO80N08TS |
Hersteller: WAYON
WMO80N08TS-CYG SMD N channel transistors
WMO80N08TS-CYG SMD N channel transistors
auf Bestellung 13 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.51 EUR |
| 41+ | 1.74 EUR |
| 111+ | 0.64 EUR |
| 5000+ | 0.39 EUR |
| WMO80P04TS |
Hersteller: WAYON
WMO80P04TS-CYG SMD P channel transistors
WMO80P04TS-CYG SMD P channel transistors
auf Bestellung 13 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 13+ | 5.51 EUR |
| 35+ | 2.04 EUR |
| 95+ | 0.76 EUR |
| 5000+ | 0.45 EUR |
| WMO90N02T1 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 90A; Idm: 222A; 39W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Case: TO252
Gate-source voltage: ±10V
On-state resistance: 4.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 39W
Drain current: 90A
Pulsed drain current: 222A
Gate charge: 0.1µC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 90A; Idm: 222A; 39W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Case: TO252
Gate-source voltage: ±10V
On-state resistance: 4.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 39W
Drain current: 90A
Pulsed drain current: 222A
Gate charge: 0.1µC
auf Bestellung 442 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 132+ | 0.54 EUR |
| 265+ | 0.27 EUR |
| 348+ | 0.21 EUR |
| 394+ | 0.18 EUR |
| 442+ | 0.16 EUR |
| WMO90N02T1 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 90A; Idm: 222A; 39W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Case: TO252
Gate-source voltage: ±10V
On-state resistance: 4.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 39W
Drain current: 90A
Pulsed drain current: 222A
Gate charge: 0.1µC
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 90A; Idm: 222A; 39W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Case: TO252
Gate-source voltage: ±10V
On-state resistance: 4.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 39W
Drain current: 90A
Pulsed drain current: 222A
Gate charge: 0.1µC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 442 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 132+ | 0.54 EUR |
| 265+ | 0.27 EUR |
| 348+ | 0.21 EUR |
| 394+ | 0.18 EUR |
| 442+ | 0.16 EUR |
| WMO95P06TS |
Hersteller: WAYON
WMO95P06TS-CYG SMD P channel transistors
WMO95P06TS-CYG SMD P channel transistors
auf Bestellung 1897 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 66+ | 1.09 EUR |
| 112+ | 0.64 EUR |
| 118+ | 0.61 EUR |
| 5000+ | 0.59 EUR |
| WMO96N03T1 |
Hersteller: WAYON
WMO96N03T1-CYG SMD N channel transistors
WMO96N03T1-CYG SMD N channel transistors
auf Bestellung 289 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis |
|---|---|
| 120+ | 0.6 EUR |
| 289+ | 0.24 EUR |
| 5000+ | 0.2 EUR |
| WMP04N60C2 |
![]() |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 3A; 29W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3A
Power dissipation: 29W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 3A; 29W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3A
Power dissipation: 29W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMP04N65C2 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 3A; 29W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3A
Power dissipation: 29W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 3A; 29W; TO251
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3A
Power dissipation: 29W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
auf Bestellung 348 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 85+ | 0.84 EUR |
| 226+ | 0.32 EUR |
| 252+ | 0.28 EUR |
| 283+ | 0.25 EUR |







