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WMP11N80M3 WMP11N80M3 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10.5A; 85W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10.5A
Power dissipation: 85W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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WMP12N80M3 WMP12N80M3 WAYON WMx12N80M3.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 12A; 86W; TO251
Case: TO251
Mounting: THT
Kind of package: tube
Power dissipation: 86W
Polarisation: unipolar
Technology: WMOS™ M3
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 620mΩ
Produkt ist nicht verfügbar
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WMP14N60C2 WMP14N60C2 WAYON WMx14N60C2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 11A; 85W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 85W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 193 Stücke:
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85+1 EUR
94+0.9 EUR
107+0.8 EUR
113+0.75 EUR
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WMP14N65C2 WMP14N65C2 WAYON WMx14N65C2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 11A; 85W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 85W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 3 Stücke:
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3+28.37 EUR
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WMP14N70C2 WMP14N70C2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 11A; 85W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 11A
Power dissipation: 85W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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WMP16N60C2 WMP16N60C2 WAYON WMx16N60C2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 13A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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WMP16N60FD WMP16N60FD WAYON WMx16N60FD.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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WMP16N65C2 WMP16N65C2 WAYON WMx16N65C2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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WMP16N65FD WMP16N65FD WAYON WMx16N65FD.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 13A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMP20N60C2 WMP20N60C2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 15A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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WMP20N65C2 WMP20N65C2 WAYON WMx20N65C2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 15A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMPN40N50D1 WMPN40N50D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 40A; Idm: 160A; 462W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 462W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 165.3nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 147 Stücke:
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21+4.16 EUR
23+3.75 EUR
30+3.3 EUR
120+2.96 EUR
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WMQ020N03LG4 WMQ020N03LG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 75A; Idm: 472A; 44.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 75A
Pulsed drain current: 472A
Power dissipation: 44.6W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 65 Stücke:
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65+1.31 EUR
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WMQ040N03LG2 WMQ040N03LG2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 27A; Idm: 170A; 24.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 27A
Pulsed drain current: 170A
Power dissipation: 24.5W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 15.9nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 298 Stücke:
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125+0.68 EUR
219+0.39 EUR
266+0.32 EUR
298+0.29 EUR
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WMQ050N03LG4 WMQ050N03LG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; Idm: 200A; 24W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 24W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
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129+0.67 EUR
269+0.32 EUR
321+0.26 EUR
341+0.25 EUR
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WMQ050N04LG2 WMQ050N04LG2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 36A; Idm: 182A; 33.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 36A
Pulsed drain current: 182A
Power dissipation: 33.8W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 10.1nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 108 Stücke:
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88+0.98 EUR
108+0.79 EUR
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WMQ060N04LG2 WMQ060N04LG2 WAYON WMQ060N04LG2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 35A; Idm: 200A; 30W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 35A
Pulsed drain current: 200A
Power dissipation: 30W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 488 Stücke:
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125+0.68 EUR
211+0.4 EUR
233+0.37 EUR
265+0.32 EUR
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WMQ060N08LG2 WMQ060N08LG2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 58A; Idm: 232A; 43W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 58A
Pulsed drain current: 232A
Power dissipation: 43W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 86 Stücke:
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65+1.33 EUR
86+0.99 EUR
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WMQ080N03LG2 WMQ080N03LG2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 17.7A; Idm: 112A; 21.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 17.7A
Pulsed drain current: 112A
Power dissipation: 21.5W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
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105+0.82 EUR
262+0.32 EUR
315+0.27 EUR
334+0.25 EUR
500+0.23 EUR
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WMQ090NV6LG4 WMQ090NV6LG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 44A; Idm: 176A; 29W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 44A
Pulsed drain current: 176A
Power dissipation: 29W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 21.7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 422 Stücke:
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99+0.87 EUR
192+0.44 EUR
234+0.37 EUR
265+0.32 EUR
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WMQ10N10TS WMQ10N10TS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 40A; 20W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 20W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 20.6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 195 Stücke:
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105+0.82 EUR
195+0.44 EUR
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WMQ119N10LG2 WMQ119N10LG2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 151A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Pulsed drain current: 151A
Power dissipation: 42W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 68 Stücke:
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66+1.3 EUR
68+1.26 EUR
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WMQ12P10TS WMQ12P10TS WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -12A; Idm: -48A; 30W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -12A
Pulsed drain current: -48A
Power dissipation: 30W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
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93+0.92 EUR
156+0.55 EUR
174+0.49 EUR
195+0.44 EUR
500+0.4 EUR
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WMQ15DN04TS WMQ15DN04TS WAYON Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 15A; Idm: 60A; 11.36W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 11.36W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 10.4nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 378 Stücke:
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105+0.82 EUR
266+0.32 EUR
319+0.26 EUR
338+0.25 EUR
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WMQ175N10LG4 WMQ175N10LG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; Idm: 172A; 65.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Pulsed drain current: 172A
Power dissipation: 65.8W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 22.7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 286 Stücke:
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132+0.64 EUR
221+0.38 EUR
246+0.35 EUR
277+0.31 EUR
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WMQ20N06TS WMQ20N06TS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 80A; 25W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 25W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 117 Stücke:
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117+0.73 EUR
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WMQ26P02TS WMQ26P02TS WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -26A; Idm: -104A; 20W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -26A
Pulsed drain current: -104A
Power dissipation: 20W
Case: PDFN3030-8
Gate-source voltage: ±12V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
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143+0.6 EUR
350+0.24 EUR
421+0.2 EUR
443+0.19 EUR
500+0.17 EUR
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WMQ28N03T1 WMQ28N03T1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 54A; 21W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 28A
Pulsed drain current: 54A
Power dissipation: 21W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 450 Stücke:
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125+0.68 EUR
353+0.24 EUR
443+0.19 EUR
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WMQ30N02T1 WMQ30N02T1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 75A; Idm: 300A; 37.8W
Drain-source voltage: 20V
Drain current: 75A
On-state resistance: 4mΩ
Pulsed drain current: 300A
Power dissipation: 37.8W
Gate-source voltage: ±10V
Mounting: SMD
Polarisation: unipolar
Gate charge: 43.8nC
Kind of channel: enhancement
Case: PDFN3030-8
Type of transistor: N-MOSFET
Kind of package: reel; tape
auf Bestellung 453 Stücke:
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125+0.68 EUR
281+0.3 EUR
338+0.25 EUR
360+0.24 EUR
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WMQ30P03T1 WMQ30P03T1 WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -30A; Idm: -120A; 29.7W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -30A
Pulsed drain current: -120A
Power dissipation: 29.7W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 483 Stücke:
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109+0.79 EUR
278+0.31 EUR
332+0.26 EUR
348+0.25 EUR
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WMQ30P04T1 WMQ30P04T1 WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -30A; Idm: -120A; 21W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -30A
Pulsed drain current: -120A
Power dissipation: 21W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 330 Stücke:
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125+0.68 EUR
217+0.39 EUR
266+0.32 EUR
300+0.29 EUR
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WMQ35P02TS WMQ35P02TS WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -35A; Idm: -140A; 24W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -35A
Pulsed drain current: -140A
Power dissipation: 24W
Case: PDFN3030-8
Gate-source voltage: ±10V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
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152+0.56 EUR
376+0.23 EUR
451+0.19 EUR
477+0.18 EUR
500+0.17 EUR
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WMQ40DN03T1 WMQ40DN03T1 WAYON Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 40A; Idm: 160A; 28.4W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 28.4W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMQ40N03T1 WMQ40N03T1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 160A; 59W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 59W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
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155+0.55 EUR
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WMQ46N03T1 WMQ46N03T1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 46A; Idm: 184A; 30W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 30W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
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382+0.23 EUR
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WMQ50N04T1 WMQ50N04T1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 200A; 22.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 22.7W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
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210+0.4 EUR
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WMQ80N03T1 WMQ80N03T1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 320A; 44.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 44.6W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMR050N03LG4 WMR050N03LG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 68A; 2.4W; DFN2020-6
Mounting: SMD
Pulsed drain current: 68A
Power dissipation: 2.4W
Gate charge: 16nC
Polarisation: unipolar
Drain current: 17A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DFN2020-6
On-state resistance: 5.4mΩ
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281+0.3 EUR
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WMR07N03T1 WMR07N03T1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; Idm: 35A; 1.6W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Pulsed drain current: 35A
Power dissipation: 1.6W
Case: DFN2020-6
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
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368+0.23 EUR
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582+0.14 EUR
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WMR07N06TS WMR07N06TS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; Idm: 28A; 2.7W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 2.7W
Case: DFN2020-6
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMR07P03TS WMR07P03TS WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -28A; 1.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 1.8W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
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341+0.25 EUR
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451+0.19 EUR
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WMR10N03T1 WMR10N03T1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 40A; 26.6W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 40A
Power dissipation: 26.6W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 9.9nC
Kind of package: reel; tape
Kind of channel: enhancement
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313+0.27 EUR
374+0.23 EUR
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WMR12P02T1 WMR12P02T1 WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -11.5A; Idm: -46A; 3.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -11.5A
Pulsed drain current: -46A
Power dissipation: 3.1W
Case: DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
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348+0.25 EUR
500+0.17 EUR
556+0.15 EUR
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WMR13N03T1 WMR13N03T1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 50A; 2.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12.5A
Pulsed drain current: 50A
Power dissipation: 2.1W
Case: DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMR15N03TS WMR15N03TS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14.5A; Idm: 58A; 2.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14.5A
Pulsed drain current: 58A
Power dissipation: 2.2W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Gate charge: 27.2nC
Kind of package: reel; tape
Kind of channel: enhancement
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152+0.56 EUR
365+0.24 EUR
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WMS048NV6LG4 WMS048NV6LG4 WAYON WMS048NV6LG4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 18.5A; Idm: 74A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 18.5A
Pulsed drain current: 74A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
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88+0.98 EUR
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WMS04N10T1 WMS04N10T1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 16A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
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152+0.56 EUR
304+0.29 EUR
379+0.23 EUR
400+0.21 EUR
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WMS04N10TS WMS04N10TS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
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132+0.64 EUR
350+0.24 EUR
506+0.17 EUR
562+0.15 EUR
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WMS04P06TS WMS04P06TS WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.8A; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.8A
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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325+0.26 EUR
463+0.18 EUR
516+0.17 EUR
575+0.14 EUR
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WMS06N10TS WMS06N10TS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.8A; Idm: 23A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5.8A
Pulsed drain current: 23A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 37.9nC
Kind of package: reel; tape
Kind of channel: enhancement
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132+0.64 EUR
257+0.33 EUR
311+0.27 EUR
355+0.24 EUR
500+0.23 EUR
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WMS080N10LG2 WMS080N10LG2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 260A; 3W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 260A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 15.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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100+0.86 EUR
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WMS08DH04T1 WMS08DH04T1 WAYON Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 40/-40V; 7.5/-5.5A; 2.2W; SOP8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Power dissipation: 2.2W
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
Drain current: 7.5/-5.5A
On-state resistance: 24/47mΩ
Gate charge: 26/20nC
Gate-source voltage: ±20V
Drain-source voltage: 40/-40V
Kind of channel: enhancement
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WMS08N06TS WMS08N06TS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 32A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMS090NV6LG4 WMS090NV6LG4 WAYON WMS090NV6LG4.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 14.5A; Idm: 58A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 14.5A
Pulsed drain current: 58A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 21.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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132+0.64 EUR
258+0.33 EUR
313+0.27 EUR
323+0.25 EUR
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WMS09P02TS WMS09P02TS WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -9A; Idm: -36A; 3W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9A
Pulsed drain current: -36A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±12V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 498 Stücke:
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122+0.7 EUR
334+0.25 EUR
417+0.2 EUR
439+0.19 EUR
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WMS10DH04TS WMS10DH04TS WAYON Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 40/-40V; 10/-8A; 3W; SOP8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Power dissipation: 3W
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
Drain current: 10/-8A
On-state resistance: 16/33mΩ
Gate charge: 26/30nC
Gate-source voltage: ±20V
Drain-source voltage: 40/-40V
Kind of channel: enhancement
auf Bestellung 359 Stücke:
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129+0.67 EUR
268+0.32 EUR
319+0.26 EUR
338+0.25 EUR
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WMS10DN04TS WMS10DN04TS WAYON Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 10A; Idm: 40A; 3W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 15.5mΩ
Mounting: SMD
Gate charge: 25.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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248+0.35 EUR
296+0.29 EUR
315+0.27 EUR
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WMS15N03T1 WMS15N03T1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 15A; Idm: 60A; 3W; SOP8
Mounting: SMD
Case: SOP8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 32nC
On-state resistance: 4mΩ
Power dissipation: 3W
Gate-source voltage: ±20V
Drain current: 15A
Drain-source voltage: 30V
Pulsed drain current: 60A
Kind of package: reel; tape
auf Bestellung 440 Stücke:
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132+0.64 EUR
231+0.37 EUR
281+0.3 EUR
317+0.27 EUR
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WMS15P02T1 WMS15P02T1 WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -15A; Idm: -60A; 3.1W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -15A
Pulsed drain current: -60A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±10V
On-state resistance: 8.2mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 488 Stücke:
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280+0.31 EUR
334+0.25 EUR
355+0.24 EUR
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WMS240N10LG2 WMS240N10LG2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 32A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
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129+0.67 EUR
226+0.38 EUR
275+0.31 EUR
311+0.27 EUR
500+0.25 EUR
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WMP11N80M3
WMP11N80M3
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10.5A; 85W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10.5A
Power dissipation: 85W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMP12N80M3 WMx12N80M3.pdf
WMP12N80M3
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 12A; 86W; TO251
Case: TO251
Mounting: THT
Kind of package: tube
Power dissipation: 86W
Polarisation: unipolar
Technology: WMOS™ M3
Drain current: 12A
Kind of channel: enhancement
Drain-source voltage: 800V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 620mΩ
Produkt ist nicht verfügbar
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WMP14N60C2 WMx14N60C2.pdf
WMP14N60C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 11A; 85W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 85W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 193 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
85+1 EUR
94+0.9 EUR
107+0.8 EUR
113+0.75 EUR
Mindestbestellmenge: 85 Stücke
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WMP14N65C2 WMx14N65C2.pdf
WMP14N65C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 11A; 85W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 85W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 3 Stücke:
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AnzahlPrivatkunde
3+28.37 EUR
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WMP14N70C2
WMP14N70C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 11A; 85W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 11A
Power dissipation: 85W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMP16N60C2 WMx16N60C2.pdf
WMP16N60C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 13A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMP16N60FD WMx16N60FD.pdf
WMP16N60FD
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMP16N65C2 WMx16N65C2.pdf
WMP16N65C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMP16N65FD WMx16N65FD.pdf
WMP16N65FD
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 13A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMP20N60C2
WMP20N60C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 15A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMP20N65C2 WMx20N65C2.pdf
WMP20N65C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 15A; 86W; TO251
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Power dissipation: 86W
Case: TO251
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMPN40N50D1
WMPN40N50D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 500V; 40A; Idm: 160A; 462W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 462W
Case: TO3PN
Gate-source voltage: ±30V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 165.3nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 147 Stücke:
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AnzahlPrivatkunde
21+4.16 EUR
23+3.75 EUR
30+3.3 EUR
120+2.96 EUR
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WMQ020N03LG4
WMQ020N03LG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 75A; Idm: 472A; 44.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 75A
Pulsed drain current: 472A
Power dissipation: 44.6W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 33nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 65 Stücke:
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AnzahlPrivatkunde
65+1.31 EUR
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WMQ040N03LG2
WMQ040N03LG2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 27A; Idm: 170A; 24.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 27A
Pulsed drain current: 170A
Power dissipation: 24.5W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 6.2mΩ
Mounting: SMD
Gate charge: 15.9nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 298 Stücke:
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125+0.68 EUR
219+0.39 EUR
266+0.32 EUR
298+0.29 EUR
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WMQ050N03LG4
WMQ050N03LG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 50A; Idm: 200A; 24W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 24W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 342 Stücke:
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129+0.67 EUR
269+0.32 EUR
321+0.26 EUR
341+0.25 EUR
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WMQ050N04LG2
WMQ050N04LG2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 36A; Idm: 182A; 33.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 36A
Pulsed drain current: 182A
Power dissipation: 33.8W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 10.1nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 108 Stücke:
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88+0.98 EUR
108+0.79 EUR
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WMQ060N04LG2 WMQ060N04LG2.pdf
WMQ060N04LG2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 35A; Idm: 200A; 30W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 35A
Pulsed drain current: 200A
Power dissipation: 30W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 7.8mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 488 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
125+0.68 EUR
211+0.4 EUR
233+0.37 EUR
265+0.32 EUR
Mindestbestellmenge: 125 Stücke
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WMQ060N08LG2
WMQ060N08LG2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 58A; Idm: 232A; 43W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 58A
Pulsed drain current: 232A
Power dissipation: 43W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Gate charge: 44nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 86 Stücke:
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65+1.33 EUR
86+0.99 EUR
Mindestbestellmenge: 65 Stücke
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WMQ080N03LG2
WMQ080N03LG2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 17.7A; Idm: 112A; 21.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 17.7A
Pulsed drain current: 112A
Power dissipation: 21.5W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
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AnzahlPrivatkunde
105+0.82 EUR
262+0.32 EUR
315+0.27 EUR
334+0.25 EUR
500+0.23 EUR
Mindestbestellmenge: 105 Stücke
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WMQ090NV6LG4
WMQ090NV6LG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 44A; Idm: 176A; 29W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 44A
Pulsed drain current: 176A
Power dissipation: 29W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 21.7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 422 Stücke:
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99+0.87 EUR
192+0.44 EUR
234+0.37 EUR
265+0.32 EUR
Mindestbestellmenge: 99 Stücke
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WMQ10N10TS
WMQ10N10TS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 40A; 20W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 20W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 20.6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 195 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
105+0.82 EUR
195+0.44 EUR
Mindestbestellmenge: 105 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
WMQ119N10LG2
WMQ119N10LG2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 151A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Pulsed drain current: 151A
Power dissipation: 42W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 68 Stücke:
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66+1.3 EUR
68+1.26 EUR
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WMQ12P10TS
WMQ12P10TS
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -12A; Idm: -48A; 30W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -12A
Pulsed drain current: -48A
Power dissipation: 30W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
93+0.92 EUR
156+0.55 EUR
174+0.49 EUR
195+0.44 EUR
500+0.4 EUR
Mindestbestellmenge: 93 Stücke
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WMQ15DN04TS
WMQ15DN04TS
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 15A; Idm: 60A; 11.36W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 11.36W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 10.4nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 378 Stücke:
Lieferzeit 14-21 Tag (e)
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105+0.82 EUR
266+0.32 EUR
319+0.26 EUR
338+0.25 EUR
Mindestbestellmenge: 105 Stücke
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WMQ175N10LG4
WMQ175N10LG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 43A; Idm: 172A; 65.8W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 43A
Pulsed drain current: 172A
Power dissipation: 65.8W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 22.7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 286 Stücke:
Lieferzeit 14-21 Tag (e)
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132+0.64 EUR
221+0.38 EUR
246+0.35 EUR
277+0.31 EUR
Mindestbestellmenge: 132 Stücke
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WMQ20N06TS
WMQ20N06TS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 20A; Idm: 80A; 25W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 20A
Pulsed drain current: 80A
Power dissipation: 25W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 117 Stücke:
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AnzahlPrivatkunde
117+0.73 EUR
Mindestbestellmenge: 117 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
WMQ26P02TS
WMQ26P02TS
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -26A; Idm: -104A; 20W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -26A
Pulsed drain current: -104A
Power dissipation: 20W
Case: PDFN3030-8
Gate-source voltage: ±12V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
143+0.6 EUR
350+0.24 EUR
421+0.2 EUR
443+0.19 EUR
500+0.17 EUR
Mindestbestellmenge: 143 Stücke
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WMQ28N03T1
WMQ28N03T1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 28A; Idm: 54A; 21W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 28A
Pulsed drain current: 54A
Power dissipation: 21W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
125+0.68 EUR
353+0.24 EUR
443+0.19 EUR
Mindestbestellmenge: 125 Stücke
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WMQ30N02T1
WMQ30N02T1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 75A; Idm: 300A; 37.8W
Drain-source voltage: 20V
Drain current: 75A
On-state resistance: 4mΩ
Pulsed drain current: 300A
Power dissipation: 37.8W
Gate-source voltage: ±10V
Mounting: SMD
Polarisation: unipolar
Gate charge: 43.8nC
Kind of channel: enhancement
Case: PDFN3030-8
Type of transistor: N-MOSFET
Kind of package: reel; tape
auf Bestellung 453 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
125+0.68 EUR
281+0.3 EUR
338+0.25 EUR
360+0.24 EUR
Mindestbestellmenge: 125 Stücke
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WMQ30P03T1
WMQ30P03T1
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -30A; Idm: -120A; 29.7W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -30A
Pulsed drain current: -120A
Power dissipation: 29.7W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 483 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
109+0.79 EUR
278+0.31 EUR
332+0.26 EUR
348+0.25 EUR
Mindestbestellmenge: 109 Stücke
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WMQ30P04T1
WMQ30P04T1
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -30A; Idm: -120A; 21W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -30A
Pulsed drain current: -120A
Power dissipation: 21W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 330 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
125+0.68 EUR
217+0.39 EUR
266+0.32 EUR
300+0.29 EUR
Mindestbestellmenge: 125 Stücke
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WMQ35P02TS
WMQ35P02TS
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -35A; Idm: -140A; 24W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -35A
Pulsed drain current: -140A
Power dissipation: 24W
Case: PDFN3030-8
Gate-source voltage: ±10V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
152+0.56 EUR
376+0.23 EUR
451+0.19 EUR
477+0.18 EUR
500+0.17 EUR
Mindestbestellmenge: 152 Stücke
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WMQ40DN03T1
WMQ40DN03T1
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 40A; Idm: 160A; 28.4W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 28.4W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMQ40N03T1
WMQ40N03T1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 160A; 59W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 59W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 155 Stücke:
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129+0.67 EUR
155+0.55 EUR
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WMQ46N03T1
WMQ46N03T1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 46A; Idm: 184A; 30W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 30W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 411 Stücke:
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122+0.7 EUR
300+0.29 EUR
360+0.24 EUR
382+0.23 EUR
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WMQ50N04T1
WMQ50N04T1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 200A; 22.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 200A
Power dissipation: 22.7W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 395 Stücke:
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100+0.86 EUR
210+0.4 EUR
249+0.35 EUR
265+0.32 EUR
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WMQ80N03T1
WMQ80N03T1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 320A; 44.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 44.6W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2930 Stücke:
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139+0.61 EUR
240+0.36 EUR
290+0.3 EUR
327+0.26 EUR
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WMR050N03LG4
WMR050N03LG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 68A; 2.4W; DFN2020-6
Mounting: SMD
Pulsed drain current: 68A
Power dissipation: 2.4W
Gate charge: 16nC
Polarisation: unipolar
Drain current: 17A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DFN2020-6
On-state resistance: 5.4mΩ
auf Bestellung 328 Stücke:
Lieferzeit 14-21 Tag (e)
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122+0.7 EUR
281+0.3 EUR
328+0.25 EUR
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WMR07N03T1
WMR07N03T1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; Idm: 35A; 1.6W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Pulsed drain current: 35A
Power dissipation: 1.6W
Case: DFN2020-6
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 990 Stücke:
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143+0.6 EUR
368+0.23 EUR
527+0.17 EUR
582+0.14 EUR
667+0.13 EUR
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WMR07N06TS
WMR07N06TS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; Idm: 28A; 2.7W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 2.7W
Case: DFN2020-6
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 490 Stücke:
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179+0.48 EUR
368+0.23 EUR
463+0.18 EUR
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WMR07P03TS
WMR07P03TS
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -28A; 1.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 1.8W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 490 Stücke:
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122+0.7 EUR
341+0.25 EUR
424+0.2 EUR
451+0.19 EUR
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WMR10N03T1
WMR10N03T1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 40A; 26.6W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 40A
Power dissipation: 26.6W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 9.9nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
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125+0.68 EUR
313+0.27 EUR
374+0.23 EUR
394+0.21 EUR
500+0.19 EUR
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WMR12P02T1
WMR12P02T1
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -11.5A; Idm: -46A; 3.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -11.5A
Pulsed drain current: -46A
Power dissipation: 3.1W
Case: DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 975 Stücke:
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AnzahlPrivatkunde
200+0.43 EUR
348+0.25 EUR
500+0.17 EUR
556+0.15 EUR
633+0.13 EUR
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WMR13N03T1
WMR13N03T1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 50A; 2.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12.5A
Pulsed drain current: 50A
Power dissipation: 2.1W
Case: DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 465 Stücke:
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107+0.8 EUR
268+0.32 EUR
321+0.26 EUR
341+0.25 EUR
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WMR15N03TS
WMR15N03TS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14.5A; Idm: 58A; 2.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14.5A
Pulsed drain current: 58A
Power dissipation: 2.2W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Gate charge: 27.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 365 Stücke:
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152+0.56 EUR
365+0.24 EUR
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WMS048NV6LG4 WMS048NV6LG4.pdf
WMS048NV6LG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 18.5A; Idm: 74A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 18.5A
Pulsed drain current: 74A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 88 Stücke:
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77+1.11 EUR
88+0.98 EUR
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WMS04N10T1
WMS04N10T1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 16A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
152+0.56 EUR
304+0.29 EUR
379+0.23 EUR
400+0.21 EUR
500+0.19 EUR
Mindestbestellmenge: 152 Stücke
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WMS04N10TS
WMS04N10TS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
132+0.64 EUR
350+0.24 EUR
506+0.17 EUR
562+0.15 EUR
633+0.13 EUR
Mindestbestellmenge: 132 Stücke
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WMS04P06TS
WMS04P06TS
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.8A; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3.8A
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 0.105Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 990 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
122+0.7 EUR
325+0.26 EUR
463+0.18 EUR
516+0.17 EUR
575+0.14 EUR
Mindestbestellmenge: 122 Stücke
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WMS06N10TS
WMS06N10TS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.8A; Idm: 23A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5.8A
Pulsed drain current: 23A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 37.9nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
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AnzahlPrivatkunde
132+0.64 EUR
257+0.33 EUR
311+0.27 EUR
355+0.24 EUR
500+0.23 EUR
Mindestbestellmenge: 132 Stücke
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WMS080N10LG2
WMS080N10LG2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 260A; 3W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 260A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 15.7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 100 Stücke:
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84+1.02 EUR
100+0.86 EUR
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WMS08DH04T1
WMS08DH04T1
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 40/-40V; 7.5/-5.5A; 2.2W; SOP8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Power dissipation: 2.2W
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
Drain current: 7.5/-5.5A
On-state resistance: 24/47mΩ
Gate charge: 26/20nC
Gate-source voltage: ±20V
Drain-source voltage: 40/-40V
Kind of channel: enhancement
auf Bestellung 488 Stücke:
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129+0.67 EUR
268+0.32 EUR
319+0.26 EUR
338+0.25 EUR
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WMS08N06TS
WMS08N06TS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 32A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 788 Stücke:
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114+0.75 EUR
317+0.27 EUR
394+0.21 EUR
417+0.2 EUR
500+0.18 EUR
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WMS090NV6LG4 WMS090NV6LG4.pdf
WMS090NV6LG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 14.5A; Idm: 58A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 14.5A
Pulsed drain current: 58A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 21.7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 323 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
132+0.64 EUR
258+0.33 EUR
313+0.27 EUR
323+0.25 EUR
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WMS09P02TS
WMS09P02TS
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -9A; Idm: -36A; 3W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9A
Pulsed drain current: -36A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±12V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 498 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
122+0.7 EUR
334+0.25 EUR
417+0.2 EUR
439+0.19 EUR
Mindestbestellmenge: 122 Stücke
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WMS10DH04TS
WMS10DH04TS
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 40/-40V; 10/-8A; 3W; SOP8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Power dissipation: 3W
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
Drain current: 10/-8A
On-state resistance: 16/33mΩ
Gate charge: 26/30nC
Gate-source voltage: ±20V
Drain-source voltage: 40/-40V
Kind of channel: enhancement
auf Bestellung 359 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
129+0.67 EUR
268+0.32 EUR
319+0.26 EUR
338+0.25 EUR
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WMS10DN04TS
WMS10DN04TS
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 10A; Idm: 40A; 3W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 15.5mΩ
Mounting: SMD
Gate charge: 25.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 449 Stücke:
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120+0.71 EUR
248+0.35 EUR
296+0.29 EUR
315+0.27 EUR
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WMS15N03T1
WMS15N03T1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 15A; Idm: 60A; 3W; SOP8
Mounting: SMD
Case: SOP8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 32nC
On-state resistance: 4mΩ
Power dissipation: 3W
Gate-source voltage: ±20V
Drain current: 15A
Drain-source voltage: 30V
Pulsed drain current: 60A
Kind of package: reel; tape
auf Bestellung 440 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
132+0.64 EUR
231+0.37 EUR
281+0.3 EUR
317+0.27 EUR
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WMS15P02T1
WMS15P02T1
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -15A; Idm: -60A; 3.1W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -15A
Pulsed drain current: -60A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±10V
On-state resistance: 8.2mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 488 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
125+0.68 EUR
280+0.31 EUR
334+0.25 EUR
355+0.24 EUR
Mindestbestellmenge: 125 Stücke
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WMS240N10LG2
WMS240N10LG2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 32A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
129+0.67 EUR
226+0.38 EUR
275+0.31 EUR
311+0.27 EUR
500+0.25 EUR
Mindestbestellmenge: 129 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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