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WMN14N60C2 WMN14N60C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DECFA798FFCC0C4&compId=WMx14N60C2.pdf?ci_sign=b819e79c003991ca9b13e3ef08e17c81b6f7de85 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 11A; 85W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 85W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
32+2.23 EUR
Mindestbestellmenge: 32
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WMN14N65C2 WMN14N65C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DED01C6FE2DC0C4&compId=WMx14N65C2.pdf?ci_sign=04f76e7286b0eab995cbfd1286f100007c00263c Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 11A; 85W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 85W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
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WMN14N70C2 WMN14N70C2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 11A; 85W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 11A
Power dissipation: 85W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
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WMN15N80M3 WMN15N80M3 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD92A98CDB9C0C4&compId=WMx15N80M3.pdf?ci_sign=d5ab24a300fc96ab8c59964563494928e6c74256 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 15A; 150W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 15A
Power dissipation: 150W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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WMN16N60C2 WMN16N60C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DED2364FEAD40C4&compId=WMx16N60C2.pdf?ci_sign=8a88713e21e0821e41674396660368ecad00022e Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 13A; 86W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 86W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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WMN16N60FD WMN16N60FD WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DED1A787C27A0C4&compId=WMx16N60FD.pdf?ci_sign=2f2e8100f4cf1e040bcbf9e2809c91c007c11a24 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 86W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 86W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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WMN16N65C2 WMN16N65C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DED5794077E20C4&compId=WMx16N65C2.pdf?ci_sign=207ac409f6744770aaf787fdcf75d89f44ca6587 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 86W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 46 Stücke:
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46+1.56 EUR
Mindestbestellmenge: 46
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WMN16N65FD WMN16N65FD WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DED71526EBA40C4&compId=WMx16N65FD.pdf?ci_sign=e2fdb4f482106f9ea7323924fd1a6918ee2d3acc Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 13A; 86W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMN16N70C2 WMN16N70C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DED5FE5EF42C0C4&compId=WMx16N70C2.pdf?ci_sign=291889488e8134b8db0acecced2c733b390f1a05 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 12A; 86W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Power dissipation: 86W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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WMN20N60C2 WMN20N60C2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 15A; 86W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 86W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMN20N65C2 WMN20N65C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DED66D48183C0C4&compId=WMx20N65C2.pdf?ci_sign=84e2b548938fd273235f34b578349e9be942a374 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 15A; 86W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Power dissipation: 86W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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WMN26N60C2 WMN26N60C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD93E1A3863C0C4&compId=WMx26N60C2.pdf?ci_sign=8de5609a1192782df51217821617b8ca24259567 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 20A; 147W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 147W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMN26N60C4 WMN26N60C4 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 22.1nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 100 Stücke:
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23+3.17 EUR
26+2.83 EUR
41+1.76 EUR
44+1.66 EUR
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WMN26N60FD WMN26N60FD WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD9463BB9ECE0C4&compId=WMx26N60FD.pdf?ci_sign=52a69f89a666e55af043eca081255318063c345f Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 20A; 147W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 147W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
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WMN26N65C2 WMN26N65C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD94F981674E0C4&compId=WMx26N65C2.pdf?ci_sign=d7cd0efa40c0e45ad09dd4da089b0d7c5bdc64c2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 20A; 147W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 147W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMN26N65C4 WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1EDE91DF84CA500A80D5&compId=WMx26N65C4.pdf?ci_sign=7e5a9d77b19220996fa7d9874ced508749bc635b Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 22.1nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMN36N60C4 WMN36N60C4 WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8B8D0180CC9E00D5&compId=WMx36N60C4.pdf?ci_sign=2ee99726ae86f346a07fc5c79dd34c3026451d81 Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 85 Stücke:
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14+5.36 EUR
15+4.79 EUR
24+3 EUR
26+2.83 EUR
Mindestbestellmenge: 14
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WMN38N60FD WMN38N60FD WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 38A; 277W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Power dissipation: 277W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.115Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMO030N06HG4 WMO030N06HG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 130A; Idm: 520A; 96W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 130A
Pulsed drain current: 520A
Power dissipation: 96W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMO030N06LG4 WMO030N06LG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 130A; Idm: 520A; 96W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 130A
Pulsed drain current: 520A
Power dissipation: 96W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 73.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMO04N65C2 WMO04N65C2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 3A; 29W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3A
Power dissipation: 29W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
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WMO04N70C2 WMO04N70C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD8C3437C9FE0C4&compId=WMx04N70C2.pdf?ci_sign=9a5ca69f43daafa66c363b03d22784e32e3dc88c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 2.6A; 29W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.6A
Power dissipation: 29W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
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WMO05N100C2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1kV; 2A; Idm: 11A; 57W
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Pulsed drain current: 11A
Power dissipation: 57W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 12.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMO05N65MM WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ MM; unipolar; 650V; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ MM
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO252
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMO06N80M3 WMO06N80M3 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDA21010A44E0C4&compId=WMx06N80M3.pdf?ci_sign=ec8e8d7d3709bd363b5b8ab33fb3f9a55c0975cf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 5A; 50W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 50W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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WMO07N100C2 WMO07N100C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA087762C9B2CC0D3&compId=WMx07N100C2.pdf?ci_sign=45f16368a8a579592d69d6a9154c17bc1bda521c Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1kV; 2.2A; Idm: 12A; 65W
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2.2A
Pulsed drain current: 12A
Power dissipation: 65W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 3.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 260ns
Produkt ist nicht verfügbar
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WMO07N60C2 WMO07N60C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD8424D8A3F60C4&compId=WMO07N60C2.pdf?ci_sign=e655245c5f75cfee74cfeb3d6895fb3178cd8e59 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 42W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
auf Bestellung 179 Stücke:
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59+1.22 EUR
145+0.49 EUR
167+0.43 EUR
179+0.4 EUR
Mindestbestellmenge: 59
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WMO07N60C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 2.8A; Idm: 9A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.8A
Pulsed drain current: 9A
Power dissipation: 42W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C4
Produkt ist nicht verfügbar
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WMO07N65C2 WMO07N65C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD8DDDE141D80C4&compId=WMx07N65C2.pdf?ci_sign=12fb0e6fbf32e6c1e4a842214d0eefc693fd8b91 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 42W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
auf Bestellung 321 Stücke:
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109+0.66 EUR
179+0.4 EUR
197+0.36 EUR
Mindestbestellmenge: 109
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WMO07N65C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 2.8A; Idm: 9A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.8A
Pulsed drain current: 9A
Power dissipation: 42W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C4
Produkt ist nicht verfügbar
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WMO07N70C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 700V; 2.8A; Idm: 9A; 42W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.8A
Power dissipation: 42W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 9A
Gate charge: 5.2nC
Produkt ist nicht verfügbar
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WMO07N80M3 WMO07N80M3 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDB89ABB6E3A0C4&compId=WMx07N80M3.pdf?ci_sign=6a794b033230990678cf1608413dc9779f696430 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 6.8A; 55W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6.8A
Power dissipation: 55W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ M3
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WMO080N10HG2 WMO080N10HG2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 53.7A; Idm: 340A; 108.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 53.7A
Pulsed drain current: 340A
Power dissipation: 108.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 99 Stücke:
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97+0.74 EUR
99+0.73 EUR
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WMO08N60C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 3.6A; Idm: 12A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.6A
Pulsed drain current: 12A
Power dissipation: 45W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhancement
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WMO08N65C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 3.6A; Idm: 12A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.6A
Pulsed drain current: 12A
Power dissipation: 45W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMO08N80M3 WMO08N80M3 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDB90B6AFB840C4&compId=WMx08N80M3.pdf?ci_sign=e645aed102b3924e9e6222dd0a497007367f86c4 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 7A; 70W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 70W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1934 Stücke:
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150+0.48 EUR
154+0.46 EUR
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WMO09N20DM WMO09N20DM WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9A; Idm: 36A; 80W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 80W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 41.3nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 290 Stücke:
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125+0.57 EUR
240+0.3 EUR
266+0.27 EUR
290+0.24 EUR
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WMO09N20DMH WMO09N20DMH WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9A; Idm: 36A; 80.6W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 80.6W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: SMD
Gate charge: 19.1nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 294 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.57 EUR
237+0.3 EUR
264+0.27 EUR
294+0.24 EUR
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WMO09N25JN WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1FD091F0F839BE31A0DF&compId=WMx09N25JN.pdf?ci_sign=9478e9dd42f3120c396840806c34e710cd6aa032 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 4.2A; Idm: 21A; 31W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 4.2A
Pulsed drain current: 21A
Power dissipation: 31W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 3.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 75ns
Produkt ist nicht verfügbar
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WMO100N07T1 WMO100N07T1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 70V; 100A; Idm: 400A; 133W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 70V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 133W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 96 Stücke:
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66+1.09 EUR
96+0.74 EUR
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WMO10N50C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 4.8A; Idm: 16A; 45W
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: TO252
Polarisation: unipolar
Technology: WMOS™ C4
Gate charge: 7.3nC
On-state resistance: 0.63Ω
Drain current: 4.8A
Pulsed drain current: 16A
Power dissipation: 45W
Gate-source voltage: ±30V
Drain-source voltage: 500V
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMO10N60C2 WMO10N60C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDBACCD1D7B80C4&compId=WMx10N60C2.pdf?ci_sign=a19361664581ff508e40a808bf4751e5f8769ed0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 8A; 57W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 57W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1766 Stücke:
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136+0.53 EUR
155+0.46 EUR
174+0.41 EUR
184+0.39 EUR
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WMO10N60C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 4.8A; Idm: 19A; 57W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.8A
Power dissipation: 57W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 9.6nC
Pulsed drain current: 19A
Produkt ist nicht verfügbar
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WMO10N65C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 4.8A; Idm: 19A; 57W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.8A
Power dissipation: 57W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 19A
Gate charge: 9.6nC
Produkt ist nicht verfügbar
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WMO10N65EM WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 4.8A; Idm: 24A; 63W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.8A
Power dissipation: 63W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 24A
Gate charge: 13.5nC
Produkt ist nicht verfügbar
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WMO10N70C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 700V; 4.8A; Idm: 19A; 57W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Pulsed drain current: 19A
Power dissipation: 57W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 9.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMO10N80M3 WMO10N80M3 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDBC9574E7020C4&compId=WMx10N80M3.pdf?ci_sign=c8761bd1e990f7fb61ff60a384d39e1833272d57 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.03Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2177 Stücke:
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95+0.76 EUR
103+0.69 EUR
109+0.66 EUR
116+0.62 EUR
250+0.6 EUR
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WMO11N60C2 WMO11N60C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DECE8C5CFCE00C4&compId=WMx11N60C2.pdf?ci_sign=db2cde9e00c4eace681b4b38ef1050f8616c55b0 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 9A; 63W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 63W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2071 Stücke:
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WMO11N65C2 WMO11N65C2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 9A; 63W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9A
Power dissipation: 63W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 6 Stücke:
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6+11.91 EUR
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WMO11N65SR WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 5.4A; Idm: 19A; 63W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5.4A
Power dissipation: 63W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 19A
Gate charge: 13.7nC
Produkt ist nicht verfügbar
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WMO11N70C2 WMO11N70C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DECF160F49D40C4&compId=WMx11N70C2.pdf?ci_sign=adcacd2d7a221b7d4d6b48749d2c9e22cbd48ef2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 8A; 63W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8A
Power dissipation: 63W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.68Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
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WMO11N70SR WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 700V; 5.4A; Idm: 19A; 63W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 5.4A
Pulsed drain current: 19A
Power dissipation: 63W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 620mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ SR
Gate charge: 13.7nC
Produkt ist nicht verfügbar
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WMO11N80M3 WMO11N80M3 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10.5A; 85W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10.5A
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 85W
Technology: WMOS™ M3
Produkt ist nicht verfügbar
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WMO12N80M3 WMO12N80M3 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8EA009DBDD7D60C4&compId=WMx12N80M3.pdf?ci_sign=ced0b39155cd7d7f30e65f161df1e7a32305e372 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 12A; 86W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 12A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 620mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1094 Stücke:
Lieferzeit 14-21 Tag (e)
30+2.39 EUR
33+2.19 EUR
38+1.9 EUR
65+1.12 EUR
68+1.06 EUR
Mindestbestellmenge: 30
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WMO12P05T1 WMO12P05T1 WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -12A; Idm: -48A; 39W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -12A
Pulsed drain current: -48A
Power dissipation: 39W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 545 Stücke:
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148+0.49 EUR
353+0.2 EUR
463+0.15 EUR
527+0.14 EUR
545+0.13 EUR
Mindestbestellmenge: 148
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WMO12P06TS WMO12P06TS WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -20A; Idm: -80A; 62.5W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -20A
Pulsed drain current: -80A
Power dissipation: 62.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 21.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 40 Stücke:
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40+1.79 EUR
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WMO13N10TS WMO13N10TS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; Idm: 52A; 39W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Pulsed drain current: 52A
Power dissipation: 39W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 629 Stücke:
Lieferzeit 14-21 Tag (e)
120+0.6 EUR
288+0.25 EUR
379+0.19 EUR
432+0.17 EUR
477+0.15 EUR
506+0.14 EUR
Mindestbestellmenge: 120
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WMO13N50C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 6A; Idm: 25A; 57W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Pulsed drain current: 25A
Power dissipation: 57W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: SMD
Gate charge: 9.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMO13N70EM WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 700V; 6.5A; Idm: 35A; 85W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 6.5A
Pulsed drain current: 35A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 20.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO13N80M3 WMO13N80M3 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DED0A9903D3E0C4&compId=WMx13N80M3.pdf?ci_sign=a1f16a4f0a124d54dbcc308680bc341ce0957ba6 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 13A; 130W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Power dissipation: 130W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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WMN14N60C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DECFA798FFCC0C4&compId=WMx14N60C2.pdf?ci_sign=b819e79c003991ca9b13e3ef08e17c81b6f7de85
WMN14N60C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 11A; 85W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Power dissipation: 85W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.23 EUR
Mindestbestellmenge: 32
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WMN14N65C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DED01C6FE2DC0C4&compId=WMx14N65C2.pdf?ci_sign=04f76e7286b0eab995cbfd1286f100007c00263c
WMN14N65C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 11A; 85W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 11A
Power dissipation: 85W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 405mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
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WMN14N70C2
WMN14N70C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 11A; 85W; TO262
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 11A
Power dissipation: 85W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 530mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMN15N80M3 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD92A98CDB9C0C4&compId=WMx15N80M3.pdf?ci_sign=d5ab24a300fc96ab8c59964563494928e6c74256
WMN15N80M3
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 15A; 150W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 15A
Power dissipation: 150W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMN16N60C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DED2364FEAD40C4&compId=WMx16N60C2.pdf?ci_sign=8a88713e21e0821e41674396660368ecad00022e
WMN16N60C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 13A; 86W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 86W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMN16N60FD pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DED1A787C27A0C4&compId=WMx16N60FD.pdf?ci_sign=2f2e8100f4cf1e040bcbf9e2809c91c007c11a24
WMN16N60FD
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 86W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 86W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMN16N65C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DED5794077E20C4&compId=WMx16N65C2.pdf?ci_sign=207ac409f6744770aaf787fdcf75d89f44ca6587
WMN16N65C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 86W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
46+1.56 EUR
Mindestbestellmenge: 46
Im Einkaufswagen  Stück im Wert von  UAH
WMN16N65FD pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DED71526EBA40C4&compId=WMx16N65FD.pdf?ci_sign=e2fdb4f482106f9ea7323924fd1a6918ee2d3acc
WMN16N65FD
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 13A; 86W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMN16N70C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DED5FE5EF42C0C4&compId=WMx16N70C2.pdf?ci_sign=291889488e8134b8db0acecced2c733b390f1a05
WMN16N70C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 12A; 86W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 12A
Power dissipation: 86W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.42Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMN20N60C2
WMN20N60C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 15A; 86W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 86W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMN20N65C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DED66D48183C0C4&compId=WMx20N65C2.pdf?ci_sign=84e2b548938fd273235f34b578349e9be942a374
WMN20N65C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 15A; 86W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 15A
Power dissipation: 86W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMN26N60C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD93E1A3863C0C4&compId=WMx26N60C2.pdf?ci_sign=8de5609a1192782df51217821617b8ca24259567
WMN26N60C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 20A; 147W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 147W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMN26N60C4
WMN26N60C4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 22.1nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
23+3.17 EUR
26+2.83 EUR
41+1.76 EUR
44+1.66 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
WMN26N60FD pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD9463BB9ECE0C4&compId=WMx26N60FD.pdf?ci_sign=52a69f89a666e55af043eca081255318063c345f
WMN26N60FD
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 20A; 147W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Power dissipation: 147W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.2Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMN26N65C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD94F981674E0C4&compId=WMx26N65C2.pdf?ci_sign=d7cd0efa40c0e45ad09dd4da089b0d7c5bdc64c2
WMN26N65C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 20A; 147W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 147W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMN26N65C4 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE91DF84CA500A80D5&compId=WMx26N65C4.pdf?ci_sign=7e5a9d77b19220996fa7d9874ced508749bc635b
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 22.1nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMN36N60C4 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8B8D0180CC9E00D5&compId=WMx36N60C4.pdf?ci_sign=2ee99726ae86f346a07fc5c79dd34c3026451d81
WMN36N60C4
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: THT
Gate charge: 46nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 85 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
14+5.36 EUR
15+4.79 EUR
24+3 EUR
26+2.83 EUR
Mindestbestellmenge: 14
Im Einkaufswagen  Stück im Wert von  UAH
WMN38N60FD
WMN38N60FD
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 38A; 277W; TO262
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 38A
Power dissipation: 277W
Case: TO262
Gate-source voltage: ±30V
On-state resistance: 0.115Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO030N06HG4
WMO030N06HG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 130A; Idm: 520A; 96W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 130A
Pulsed drain current: 520A
Power dissipation: 96W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO030N06LG4
WMO030N06LG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 130A; Idm: 520A; 96W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 130A
Pulsed drain current: 520A
Power dissipation: 96W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 73.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO04N65C2
WMO04N65C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 3A; 29W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3A
Power dissipation: 29W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.9Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO04N70C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD8C3437C9FE0C4&compId=WMx04N70C2.pdf?ci_sign=9a5ca69f43daafa66c363b03d22784e32e3dc88c
WMO04N70C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 2.6A; 29W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.6A
Power dissipation: 29W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2.45Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO05N100C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1kV; 2A; Idm: 11A; 57W
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Pulsed drain current: 11A
Power dissipation: 57W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 3.5Ω
Mounting: SMD
Gate charge: 12.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO05N65MM
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ MM; unipolar; 650V; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ MM
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO252
On-state resistance: 1.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO06N80M3 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDA21010A44E0C4&compId=WMx06N80M3.pdf?ci_sign=ec8e8d7d3709bd363b5b8ab33fb3f9a55c0975cf
WMO06N80M3
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 5A; 50W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 5A
Power dissipation: 50W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO07N100C2 pVersion=0046&contRep=ZT&docId=005056AB281E1EDDA087762C9B2CC0D3&compId=WMx07N100C2.pdf?ci_sign=45f16368a8a579592d69d6a9154c17bc1bda521c
WMO07N100C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 1kV; 2.2A; Idm: 12A; 65W
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2.2A
Pulsed drain current: 12A
Power dissipation: 65W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 2Ω
Mounting: SMD
Gate charge: 3.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 260ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO07N60C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD8424D8A3F60C4&compId=WMO07N60C2.pdf?ci_sign=e655245c5f75cfee74cfeb3d6895fb3178cd8e59
WMO07N60C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 5A; 42W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 5A
Power dissipation: 42W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
auf Bestellung 179 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
59+1.22 EUR
145+0.49 EUR
167+0.43 EUR
179+0.4 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
WMO07N60C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 2.8A; Idm: 9A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 2.8A
Pulsed drain current: 9A
Power dissipation: 42W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C4
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO07N65C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DD8DDDE141D80C4&compId=WMx07N65C2.pdf?ci_sign=12fb0e6fbf32e6c1e4a842214d0eefc693fd8b91
WMO07N65C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 5A; 42W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5A
Power dissipation: 42W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
auf Bestellung 321 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
109+0.66 EUR
179+0.4 EUR
197+0.36 EUR
Mindestbestellmenge: 109
Im Einkaufswagen  Stück im Wert von  UAH
WMO07N65C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 2.8A; Idm: 9A; 42W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 2.8A
Pulsed drain current: 9A
Power dissipation: 42W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Gate charge: 5.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C4
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO07N70C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 700V; 2.8A; Idm: 9A; 42W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 2.8A
Power dissipation: 42W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.14Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 9A
Gate charge: 5.2nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO07N80M3 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDB89ABB6E3A0C4&compId=WMx07N80M3.pdf?ci_sign=6a794b033230990678cf1608413dc9779f696430
WMO07N80M3
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 6.8A; 55W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 6.8A
Power dissipation: 55W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ M3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO080N10HG2
WMO080N10HG2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 53.7A; Idm: 340A; 108.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 53.7A
Pulsed drain current: 340A
Power dissipation: 108.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 8mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 99 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
67+1.07 EUR
97+0.74 EUR
99+0.73 EUR
Mindestbestellmenge: 67
Im Einkaufswagen  Stück im Wert von  UAH
WMO08N60C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 3.6A; Idm: 12A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.6A
Pulsed drain current: 12A
Power dissipation: 45W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO08N65C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 3.6A; Idm: 12A; 45W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 3.6A
Pulsed drain current: 12A
Power dissipation: 45W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 780mΩ
Mounting: SMD
Gate charge: 7.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO08N80M3 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDB90B6AFB840C4&compId=WMx08N80M3.pdf?ci_sign=e645aed102b3924e9e6222dd0a497007367f86c4
WMO08N80M3
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 7A; 70W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 70W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1934 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
139+0.51 EUR
150+0.48 EUR
154+0.46 EUR
Mindestbestellmenge: 139
Im Einkaufswagen  Stück im Wert von  UAH
WMO09N20DM
WMO09N20DM
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9A; Idm: 36A; 80W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 80W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 41.3nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 290 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
240+0.3 EUR
266+0.27 EUR
290+0.24 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
WMO09N20DMH
WMO09N20DMH
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 9A; Idm: 36A; 80.6W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 200V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 80.6W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.35Ω
Mounting: SMD
Gate charge: 19.1nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 294 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
237+0.3 EUR
264+0.27 EUR
294+0.24 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
WMO09N25JN pVersion=0046&contRep=ZT&docId=005056AB281E1FD091F0F839BE31A0DF&compId=WMx09N25JN.pdf?ci_sign=9478e9dd42f3120c396840806c34e710cd6aa032
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 250V; 4.2A; Idm: 21A; 31W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 250V
Drain current: 4.2A
Pulsed drain current: 21A
Power dissipation: 31W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 3.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Reverse recovery time: 75ns
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO100N07T1
WMO100N07T1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 70V; 100A; Idm: 400A; 133W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 70V
Drain current: 100A
Pulsed drain current: 400A
Power dissipation: 133W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 7.4mΩ
Mounting: SMD
Gate charge: 92nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 96 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
66+1.09 EUR
96+0.74 EUR
Mindestbestellmenge: 66
Im Einkaufswagen  Stück im Wert von  UAH
WMO10N50C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 4.8A; Idm: 16A; 45W
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: TO252
Polarisation: unipolar
Technology: WMOS™ C4
Gate charge: 7.3nC
On-state resistance: 0.63Ω
Drain current: 4.8A
Pulsed drain current: 16A
Power dissipation: 45W
Gate-source voltage: ±30V
Drain-source voltage: 500V
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO10N60C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDBACCD1D7B80C4&compId=WMx10N60C2.pdf?ci_sign=a19361664581ff508e40a808bf4751e5f8769ed0
WMO10N60C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 8A; 57W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Power dissipation: 57W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 690mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1766 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
155+0.46 EUR
174+0.41 EUR
184+0.39 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
WMO10N60C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 4.8A; Idm: 19A; 57W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 4.8A
Power dissipation: 57W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 9.6nC
Pulsed drain current: 19A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO10N65C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 4.8A; Idm: 19A; 57W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.8A
Power dissipation: 57W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 19A
Gate charge: 9.6nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO10N65EM
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 4.8A; Idm: 24A; 63W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.8A
Power dissipation: 63W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 24A
Gate charge: 13.5nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO10N70C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 700V; 4.8A; Idm: 19A; 57W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 4.8A
Pulsed drain current: 19A
Power dissipation: 57W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Gate charge: 9.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO10N80M3 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DDBC9574E7020C4&compId=WMx10N80M3.pdf?ci_sign=c8761bd1e990f7fb61ff60a384d39e1833272d57
WMO10N80M3
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10A; 85W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 1.03Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2177 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
95+0.76 EUR
103+0.69 EUR
109+0.66 EUR
116+0.62 EUR
250+0.6 EUR
Mindestbestellmenge: 95
Im Einkaufswagen  Stück im Wert von  UAH
WMO11N60C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DECE8C5CFCE00C4&compId=WMx11N60C2.pdf?ci_sign=db2cde9e00c4eace681b4b38ef1050f8616c55b0
WMO11N60C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 600V; 9A; 63W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 9A
Power dissipation: 63W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2071 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
WMO11N65C2
WMO11N65C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 9A; 63W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 9A
Power dissipation: 63W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.54Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 6 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
6+11.91 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
WMO11N65SR
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 5.4A; Idm: 19A; 63W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 5.4A
Power dissipation: 63W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 19A
Gate charge: 13.7nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO11N70C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DECF160F49D40C4&compId=WMx11N70C2.pdf?ci_sign=adcacd2d7a221b7d4d6b48749d2c9e22cbd48ef2
WMO11N70C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 700V; 8A; 63W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8A
Power dissipation: 63W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.68Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO11N70SR
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 700V; 5.4A; Idm: 19A; 63W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 5.4A
Pulsed drain current: 19A
Power dissipation: 63W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 620mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ SR
Gate charge: 13.7nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO11N80M3
WMO11N80M3
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 10.5A; 85W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 10.5A
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.8Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 85W
Technology: WMOS™ M3
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO12N80M3 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8EA009DBDD7D60C4&compId=WMx12N80M3.pdf?ci_sign=ced0b39155cd7d7f30e65f161df1e7a32305e372
WMO12N80M3
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 12A; 86W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 12A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 620mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1094 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.39 EUR
33+2.19 EUR
38+1.9 EUR
65+1.12 EUR
68+1.06 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
WMO12P05T1
WMO12P05T1
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -55V; -12A; Idm: -48A; 39W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -55V
Drain current: -12A
Pulsed drain current: -48A
Power dissipation: 39W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 545 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
148+0.49 EUR
353+0.2 EUR
463+0.15 EUR
527+0.14 EUR
545+0.13 EUR
Mindestbestellmenge: 148
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WMO12P06TS
WMO12P06TS
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -20A; Idm: -80A; 62.5W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -20A
Pulsed drain current: -80A
Power dissipation: 62.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 21.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 40 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.79 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
WMO13N10TS
WMO13N10TS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; Idm: 52A; 39W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Pulsed drain current: 52A
Power dissipation: 39W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 629 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
288+0.25 EUR
379+0.19 EUR
432+0.17 EUR
477+0.15 EUR
506+0.14 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
WMO13N50C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 6A; Idm: 25A; 57W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 6A
Pulsed drain current: 25A
Power dissipation: 57W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: SMD
Gate charge: 9.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO13N70EM
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 700V; 6.5A; Idm: 35A; 85W
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 6.5A
Pulsed drain current: 35A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 390mΩ
Mounting: SMD
Gate charge: 20.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO13N80M3 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DED0A9903D3E0C4&compId=WMx13N80M3.pdf?ci_sign=a1f16a4f0a124d54dbcc308680bc341ce0957ba6
WMO13N80M3
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ M3; unipolar; 800V; 13A; 130W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ M3
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 13A
Power dissipation: 130W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.48Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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