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WMO14N65C4 WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8B8D13C79D98E0D5&compId=WMx14N65C4.pdf?ci_sign=7d06778ea3b30f4c5290ba3e47c6d80aa415de0f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 6A; Idm: 26A; 85W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Pulsed drain current: 26A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C4
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO14N70C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 700V; 6A; Idm: 26A; 85W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 6A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 26A
Gate charge: 13nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO15N10T1 WMO15N10T1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 60A; 41.7W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 41.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 20.6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 932 Stücke:
Lieferzeit 14-21 Tag (e)
112+0.64 EUR
268+0.27 EUR
353+0.2 EUR
397+0.18 EUR
443+0.16 EUR
Mindestbestellmenge: 112
Im Einkaufswagen  Stück im Wert von  UAH
WMO15N10T1 WMO15N10T1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 60A; 41.7W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 41.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 20.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 932 Stücke:
Lieferzeit 7-14 Tag (e)
112+0.64 EUR
268+0.27 EUR
353+0.2 EUR
397+0.18 EUR
443+0.16 EUR
Mindestbestellmenge: 112
Im Einkaufswagen  Stück im Wert von  UAH
WMO15N12TS WMO15N12TS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 14.5A; Idm: 58A; 66W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 14.5A
Pulsed drain current: 58A
Power dissipation: 66W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
132+0.54 EUR
313+0.23 EUR
414+0.17 EUR
472+0.15 EUR
500+0.14 EUR
Mindestbestellmenge: 132
Im Einkaufswagen  Stück im Wert von  UAH
WMO15N12TS WMO15N12TS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 14.5A; Idm: 58A; 66W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 14.5A
Pulsed drain current: 58A
Power dissipation: 66W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 500 Stücke:
Lieferzeit 7-14 Tag (e)
132+0.54 EUR
313+0.23 EUR
414+0.17 EUR
472+0.15 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 132
Im Einkaufswagen  Stück im Wert von  UAH
WMO15N15T1 WAYON WMO15N15T1-CYG SMD N channel transistors
auf Bestellung 533 Stücke:
Lieferzeit 7-14 Tag (e)
89+0.81 EUR
222+0.32 EUR
234+0.31 EUR
Mindestbestellmenge: 89
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WMO15N25T2 WAYON WMO15N25T2-CYG SMD N channel transistors
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
59+1.23 EUR
100+0.72 EUR
5000+0.57 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
WMO15N60C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 7.8A; Idm: 26A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 14.6nC
Pulsed drain current: 26A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO15N65C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 7.8A; Idm: 26A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.8A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 14.6nC
Pulsed drain current: 26A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO15N65F2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 7.8A; Idm: 26A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.8A
Pulsed drain current: 26A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 335mΩ
Mounting: SMD
Gate charge: 14.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO15N70C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 700V; 7.8A; Idm: 26A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.8A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 14.6nC
Pulsed drain current: 26A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO16N60FD WMO16N60FD WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DED1A787C27A0C4&compId=WMx16N60FD.pdf?ci_sign=2f2e8100f4cf1e040bcbf9e2809c91c007c11a24 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 86W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO16N65C2 WMO16N65C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DED5794077E20C4&compId=WMx16N65C2.pdf?ci_sign=207ac409f6744770aaf787fdcf75d89f44ca6587 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 86W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
5+14.3 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
WMO16N65C2 WMO16N65C2 WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DED5794077E20C4&compId=WMx16N65C2.pdf?ci_sign=207ac409f6744770aaf787fdcf75d89f44ca6587 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 86W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)
5+14.3 EUR
25+2.86 EUR
100+0.77 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
WMO16N65FD WMO16N65FD WAYON pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DED71526EBA40C4&compId=WMx16N65FD.pdf?ci_sign=e2fdb4f482106f9ea7323924fd1a6918ee2d3acc Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 13A; 86W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO16N65SR WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 8.4A; Idm: 35A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.4A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 19.5nC
Pulsed drain current: 35A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO16N70SR WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 700V; 8.4A; Idm: 35A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8.4A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 19.5nC
Pulsed drain current: 35A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO175N10HG4 WMO175N10HG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 180A; 67.5W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 67.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
81+0.89 EUR
136+0.53 EUR
151+0.47 EUR
191+0.37 EUR
200+0.36 EUR
Mindestbestellmenge: 81
Im Einkaufswagen  Stück im Wert von  UAH
WMO175N10HG4 WMO175N10HG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 180A; 67.5W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 67.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 200 Stücke:
Lieferzeit 7-14 Tag (e)
81+0.89 EUR
136+0.53 EUR
151+0.47 EUR
191+0.37 EUR
200+0.36 EUR
2500+0.34 EUR
Mindestbestellmenge: 81
Im Einkaufswagen  Stück im Wert von  UAH
WMO175N10LG4 WMO175N10LG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 180A; 67.5W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 67.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 22.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 180 Stücke:
Lieferzeit 14-21 Tag (e)
105+0.69 EUR
172+0.42 EUR
180+0.4 EUR
Mindestbestellmenge: 105
Im Einkaufswagen  Stück im Wert von  UAH
WMO175N10LG4 WMO175N10LG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 180A; 67.5W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 67.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 22.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 180 Stücke:
Lieferzeit 7-14 Tag (e)
105+0.69 EUR
172+0.42 EUR
180+0.4 EUR
2500+0.27 EUR
Mindestbestellmenge: 105
Im Einkaufswagen  Stück im Wert von  UAH
WMO18N20JN WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1FD091F052BC183460DF&compId=WMx18N20JN.pdf?ci_sign=fc2448d11187b1127b662e603dfa38eeb089f0c9 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 7A; Idm: 39A; 36W; TO252; 80ns
Case: TO252
Mounting: SMD
Reverse recovery time: 80ns
On-state resistance: 135mΩ
Drain current: 7A
Gate-source voltage: ±20V
Power dissipation: 36W
Pulsed drain current: 39A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 7.2nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO18N20T2 WMO18N20T2 WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1FD0A280B1C3D43A60E1&compId=WMO18N20T2.pdf?ci_sign=3f8eda1ad88a68d2e6a821d6a4d659c3e84a33c2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 83W; TO252
Case: TO252
Mounting: SMD
On-state resistance: 0.13Ω
Drain current: 18A
Gate-source voltage: ±20V
Power dissipation: 83W
Pulsed drain current: 72A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 11nC
auf Bestellung 81 Stücke:
Lieferzeit 14-21 Tag (e)
66+1.09 EUR
81+0.89 EUR
Mindestbestellmenge: 66
Im Einkaufswagen  Stück im Wert von  UAH
WMO18N20T2 WMO18N20T2 WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1FD0A280B1C3D43A60E1&compId=WMO18N20T2.pdf?ci_sign=3f8eda1ad88a68d2e6a821d6a4d659c3e84a33c2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 83W; TO252
Case: TO252
Mounting: SMD
On-state resistance: 0.13Ω
Drain current: 18A
Gate-source voltage: ±20V
Power dissipation: 83W
Pulsed drain current: 72A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 11nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 81 Stücke:
Lieferzeit 7-14 Tag (e)
66+1.09 EUR
81+0.89 EUR
100+0.72 EUR
250+0.62 EUR
1000+0.6 EUR
Mindestbestellmenge: 66
Im Einkaufswagen  Stück im Wert von  UAH
WMO18N50C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 10A; Idm: 50A; 75W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10A
Pulsed drain current: 50A
Power dissipation: 75W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO18P10TS WAYON WMO18P10TS-CYG SMD P channel transistors
auf Bestellung 125 Stücke:
Lieferzeit 7-14 Tag (e)
76+0.94 EUR
125+0.57 EUR
5000+0.35 EUR
Mindestbestellmenge: 76
Im Einkaufswagen  Stück im Wert von  UAH
WMO190N03TS WMO190N03TS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 190A; Idm: 760A; 166.7W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 190A
Pulsed drain current: 760A
Power dissipation: 166.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO190N15HG4 WAYON WMO190N15HG4-CYG SMD N channel transistors
auf Bestellung 85 Stücke:
Lieferzeit 7-14 Tag (e)
60+1.2 EUR
85+0.84 EUR
5000+0.68 EUR
Mindestbestellmenge: 60
Im Einkaufswagen  Stück im Wert von  UAH
WMO20N15T2 WMO20N15T2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 12.6A; Idm: 80A; 56.8W; TO252
Case: TO252
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7.8nC
On-state resistance: 88mΩ
Drain current: 12.6A
Power dissipation: 56.8W
Pulsed drain current: 80A
Drain-source voltage: 150V
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 433 Stücke:
Lieferzeit 14-21 Tag (e)
85+0.84 EUR
144+0.5 EUR
160+0.45 EUR
180+0.4 EUR
250+0.36 EUR
Mindestbestellmenge: 85
Im Einkaufswagen  Stück im Wert von  UAH
WMO20N15T2 WMO20N15T2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 12.6A; Idm: 80A; 56.8W; TO252
Case: TO252
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7.8nC
On-state resistance: 88mΩ
Drain current: 12.6A
Power dissipation: 56.8W
Pulsed drain current: 80A
Drain-source voltage: 150V
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 433 Stücke:
Lieferzeit 7-14 Tag (e)
85+0.84 EUR
144+0.5 EUR
160+0.45 EUR
180+0.4 EUR
250+0.36 EUR
1000+0.35 EUR
Mindestbestellmenge: 85
Im Einkaufswagen  Stück im Wert von  UAH
WMO20N20JN WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1FD097CAE8F945CEA0E1&compId=WMx20N20JN.pdf?ci_sign=e7d89bf9d1f1284debcba6443db31cc2b39e3d0b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12A; Idm: 60A; 59W; TO252
Case: TO252
Mounting: SMD
Gate-source voltage: ±20V
Gate charge: 4.1nC
Reverse recovery time: 110ns
On-state resistance: 80mΩ
Drain current: 12A
Power dissipation: 59W
Pulsed drain current: 60A
Drain-source voltage: 200V
Kind of package: reel; tape
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
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WMO20N65EM WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO252
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO20P04T1 WMO20P04T1 WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -20A; Idm: -80A; 27.8W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -20A
Pulsed drain current: -80A
Power dissipation: 27.8W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO20P15TS WAYON WMO20P15TS-CYG SMD P channel transistors
auf Bestellung 152 Stücke:
Lieferzeit 7-14 Tag (e)
69+1.05 EUR
152+0.47 EUR
5000+0.41 EUR
Mindestbestellmenge: 69
Im Einkaufswagen  Stück im Wert von  UAH
WMO22N50C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 11A; Idm: 60A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Pulsed drain current: 60A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 14.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO240N10LG2 WMO240N10LG2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; Idm: 144A; 56.8W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Pulsed drain current: 144A
Power dissipation: 56.8W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 15.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2385 Stücke:
Lieferzeit 14-21 Tag (e)
132+0.54 EUR
250+0.29 EUR
278+0.26 EUR
315+0.23 EUR
350+0.2 EUR
Mindestbestellmenge: 132
Im Einkaufswagen  Stück im Wert von  UAH
WMO240N10LG2 WMO240N10LG2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; Idm: 144A; 56.8W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Pulsed drain current: 144A
Power dissipation: 56.8W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 15.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2385 Stücke:
Lieferzeit 7-14 Tag (e)
132+0.54 EUR
250+0.29 EUR
278+0.26 EUR
315+0.23 EUR
350+0.2 EUR
Mindestbestellmenge: 132
Im Einkaufswagen  Stück im Wert von  UAH
WMO25N06TS WMO25N06TS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 41.7W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 41.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1895 Stücke:
Lieferzeit 14-21 Tag (e)
120+0.6 EUR
290+0.25 EUR
382+0.19 EUR
428+0.17 EUR
481+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
WMO25N06TS WMO25N06TS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 41.7W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 41.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1895 Stücke:
Lieferzeit 7-14 Tag (e)
120+0.6 EUR
290+0.25 EUR
382+0.19 EUR
428+0.17 EUR
481+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
WMO25N10T1 WMO25N10T1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 25A; Idm: 100A; 53.2W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 53.2W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: SMD
Gate charge: 37.9nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 469 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.57 EUR
266+0.27 EUR
296+0.24 EUR
379+0.19 EUR
400+0.18 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
WMO25N10T1 WMO25N10T1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 25A; Idm: 100A; 53.2W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 53.2W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: SMD
Gate charge: 37.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 469 Stücke:
Lieferzeit 7-14 Tag (e)
125+0.57 EUR
266+0.27 EUR
296+0.24 EUR
379+0.19 EUR
400+0.18 EUR
2500+0.17 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
WMO25N50C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 13A; Idm: 65A; 135W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 135W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO25P03TS WMO25P03TS WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -25A; Idm: -100A; 22.5W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -25A
Pulsed drain current: -100A
Power dissipation: 22.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
114+0.63 EUR
277+0.26 EUR
365+0.2 EUR
414+0.17 EUR
439+0.16 EUR
463+0.15 EUR
Mindestbestellmenge: 114
Im Einkaufswagen  Stück im Wert von  UAH
WMO25P03TS WMO25P03TS WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -25A; Idm: -100A; 22.5W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -25A
Pulsed drain current: -100A
Power dissipation: 22.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 500 Stücke:
Lieferzeit 7-14 Tag (e)
114+0.63 EUR
277+0.26 EUR
365+0.2 EUR
414+0.17 EUR
439+0.16 EUR
463+0.15 EUR
Mindestbestellmenge: 114
Im Einkaufswagen  Stück im Wert von  UAH
WMO25P04TS WAYON WMO25P04TS-CYG SMD P channel transistors
auf Bestellung 498 Stücke:
Lieferzeit 7-14 Tag (e)
94+0.76 EUR
400+0.18 EUR
424+0.17 EUR
5000+0.16 EUR
Mindestbestellmenge: 94
Im Einkaufswagen  Stück im Wert von  UAH
WMO25P06T1 WAYON WMO25P06T1-CYG SMD P channel transistors
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)
9+7.95 EUR
66+1.09 EUR
181+0.4 EUR
5000+0.24 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
WMO26N60C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Power dissipation: 135W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 22.1nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO26N65C4 WAYON pVersion=0046&contRep=ZT&docId=005056AB281E1EDE91DF84CA500A80D5&compId=WMx26N65C4.pdf?ci_sign=7e5a9d77b19220996fa7d9874ced508749bc635b Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Power dissipation: 135W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 22.1nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO26N65F2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO28N15T2 WAYON WMO28N15T2-CYG SMD N channel transistors
auf Bestellung 53 Stücke:
Lieferzeit 7-14 Tag (e)
53+1.34 EUR
102+0.7 EUR
5000+0.42 EUR
Mindestbestellmenge: 53
Im Einkaufswagen  Stück im Wert von  UAH
WMO2N100D1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1kV; 2A; Idm: 8A; 60W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 60W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 6.3Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO30P03TS WAYON WMO30P03TS-CYG SMD P channel transistors
auf Bestellung 366 Stücke:
Lieferzeit 7-14 Tag (e)
91+0.79 EUR
366+0.2 EUR
5000+0.17 EUR
Mindestbestellmenge: 91
Im Einkaufswagen  Stück im Wert von  UAH
WMO30P10TS WAYON WMO30P10TS-CYG SMD P channel transistors
auf Bestellung 133 Stücke:
Lieferzeit 7-14 Tag (e)
99+0.73 EUR
133+0.54 EUR
147+0.49 EUR
5000+0.29 EUR
Mindestbestellmenge: 99
Im Einkaufswagen  Stück im Wert von  UAH
WMO35N06T1 WMO35N06T1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35A; Idm: 140A; 44.6W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Pulsed drain current: 140A
Power dissipation: 44.6W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 14.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 445 Stücke:
Lieferzeit 14-21 Tag (e)
117+0.61 EUR
254+0.28 EUR
281+0.25 EUR
363+0.2 EUR
385+0.19 EUR
Mindestbestellmenge: 117
Im Einkaufswagen  Stück im Wert von  UAH
WMO35N06T1 WMO35N06T1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35A; Idm: 140A; 44.6W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Pulsed drain current: 140A
Power dissipation: 44.6W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 14.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 445 Stücke:
Lieferzeit 7-14 Tag (e)
117+0.61 EUR
254+0.28 EUR
281+0.25 EUR
363+0.2 EUR
385+0.19 EUR
2500+0.18 EUR
Mindestbestellmenge: 117
Im Einkaufswagen  Stück im Wert von  UAH
WMO35P04T1 WAYON WMO35P04T1-CYG SMD P channel transistors
auf Bestellung 422 Stücke:
Lieferzeit 7-14 Tag (e)
118+0.61 EUR
341+0.21 EUR
360+0.2 EUR
Mindestbestellmenge: 118
Im Einkaufswagen  Stück im Wert von  UAH
WMO35P06TS WAYON WMO35P06TS-CYG SMD P channel transistors
auf Bestellung 169 Stücke:
Lieferzeit 7-14 Tag (e)
77+0.94 EUR
169+0.43 EUR
5000+0.35 EUR
Mindestbestellmenge: 77
Im Einkaufswagen  Stück im Wert von  UAH
WMO3N120D1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.2kV; 3A; Idm: 12A; 62.5W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 62.5W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 6.3Ω
Mounting: SMD
Gate charge: 22.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO40N04TS WAYON WMO40N04TS-CYG SMD N channel transistors
auf Bestellung 486 Stücke:
Lieferzeit 7-14 Tag (e)
124+0.58 EUR
451+0.16 EUR
477+0.15 EUR
5000+0.14 EUR
Mindestbestellmenge: 124
Im Einkaufswagen  Stück im Wert von  UAH
WMO14N65C4 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE8B8D13C79D98E0D5&compId=WMx14N65C4.pdf?ci_sign=7d06778ea3b30f4c5290ba3e47c6d80aa415de0f
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 6A; Idm: 26A; 85W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 6A
Pulsed drain current: 26A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Technology: WMOS™ C4
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO14N70C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 700V; 6A; Idm: 26A; 85W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 6A
Power dissipation: 85W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 26A
Gate charge: 13nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO15N10T1
WMO15N10T1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 60A; 41.7W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 41.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 20.6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 932 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
112+0.64 EUR
268+0.27 EUR
353+0.2 EUR
397+0.18 EUR
443+0.16 EUR
Mindestbestellmenge: 112
Im Einkaufswagen  Stück im Wert von  UAH
WMO15N10T1
WMO15N10T1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 15A; Idm: 60A; 41.7W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 41.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 20.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 932 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
112+0.64 EUR
268+0.27 EUR
353+0.2 EUR
397+0.18 EUR
443+0.16 EUR
Mindestbestellmenge: 112
Im Einkaufswagen  Stück im Wert von  UAH
WMO15N12TS
WMO15N12TS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 14.5A; Idm: 58A; 66W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 14.5A
Pulsed drain current: 58A
Power dissipation: 66W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
132+0.54 EUR
313+0.23 EUR
414+0.17 EUR
472+0.15 EUR
500+0.14 EUR
Mindestbestellmenge: 132
Im Einkaufswagen  Stück im Wert von  UAH
WMO15N12TS
WMO15N12TS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 14.5A; Idm: 58A; 66W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 14.5A
Pulsed drain current: 58A
Power dissipation: 66W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 500 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
132+0.54 EUR
313+0.23 EUR
414+0.17 EUR
472+0.15 EUR
500+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 132
Im Einkaufswagen  Stück im Wert von  UAH
WMO15N15T1
Hersteller: WAYON
WMO15N15T1-CYG SMD N channel transistors
auf Bestellung 533 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
89+0.81 EUR
222+0.32 EUR
234+0.31 EUR
Mindestbestellmenge: 89
Im Einkaufswagen  Stück im Wert von  UAH
WMO15N25T2
Hersteller: WAYON
WMO15N25T2-CYG SMD N channel transistors
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
59+1.23 EUR
100+0.72 EUR
5000+0.57 EUR
Mindestbestellmenge: 59
Im Einkaufswagen  Stück im Wert von  UAH
WMO15N60C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 7.8A; Idm: 26A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 7.8A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 14.6nC
Pulsed drain current: 26A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO15N65C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 7.8A; Idm: 26A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.8A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 14.6nC
Pulsed drain current: 26A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO15N65F2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 7.8A; Idm: 26A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.8A
Pulsed drain current: 26A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 335mΩ
Mounting: SMD
Gate charge: 14.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO15N70C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 700V; 7.8A; Idm: 26A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 7.8A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 14.6nC
Pulsed drain current: 26A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO16N60FD pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DED1A787C27A0C4&compId=WMx16N60FD.pdf?ci_sign=2f2e8100f4cf1e040bcbf9e2809c91c007c11a24
WMO16N60FD
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 600V; 13A; 86W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO16N65C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DED5794077E20C4&compId=WMx16N65C2.pdf?ci_sign=207ac409f6744770aaf787fdcf75d89f44ca6587
WMO16N65C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 86W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 5 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+14.3 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
WMO16N65C2 pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DED5794077E20C4&compId=WMx16N65C2.pdf?ci_sign=207ac409f6744770aaf787fdcf75d89f44ca6587
WMO16N65C2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 13A; 86W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+14.3 EUR
25+2.86 EUR
100+0.77 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
WMO16N65FD pVersion=0046&contRep=ZT&docId=005056AB90B41EDA8DED71526EBA40C4&compId=WMx16N65FD.pdf?ci_sign=e2fdb4f482106f9ea7323924fd1a6918ee2d3acc
WMO16N65FD
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ FD; unipolar; 650V; 13A; 86W; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ FD
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.32Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO16N65SR
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 650V; 8.4A; Idm: 35A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 8.4A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.35Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 19.5nC
Pulsed drain current: 35A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO16N70SR
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ SR; unipolar; 700V; 8.4A; Idm: 35A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ SR
Polarisation: unipolar
Drain-source voltage: 700V
Drain current: 8.4A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 19.5nC
Pulsed drain current: 35A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO175N10HG4
WMO175N10HG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 180A; 67.5W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 67.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 200 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
81+0.89 EUR
136+0.53 EUR
151+0.47 EUR
191+0.37 EUR
200+0.36 EUR
Mindestbestellmenge: 81
Im Einkaufswagen  Stück im Wert von  UAH
WMO175N10HG4
WMO175N10HG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 180A; 67.5W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 67.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 200 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
81+0.89 EUR
136+0.53 EUR
151+0.47 EUR
191+0.37 EUR
200+0.36 EUR
2500+0.34 EUR
Mindestbestellmenge: 81
Im Einkaufswagen  Stück im Wert von  UAH
WMO175N10LG4
WMO175N10LG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 180A; 67.5W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 67.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 22.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 180 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
105+0.69 EUR
172+0.42 EUR
180+0.4 EUR
Mindestbestellmenge: 105
Im Einkaufswagen  Stück im Wert von  UAH
WMO175N10LG4
WMO175N10LG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 45A; Idm: 180A; 67.5W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 45A
Pulsed drain current: 180A
Power dissipation: 67.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 22.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 180 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
105+0.69 EUR
172+0.42 EUR
180+0.4 EUR
2500+0.27 EUR
Mindestbestellmenge: 105
Im Einkaufswagen  Stück im Wert von  UAH
WMO18N20JN pVersion=0046&contRep=ZT&docId=005056AB281E1FD091F052BC183460DF&compId=WMx18N20JN.pdf?ci_sign=fc2448d11187b1127b662e603dfa38eeb089f0c9
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 7A; Idm: 39A; 36W; TO252; 80ns
Case: TO252
Mounting: SMD
Reverse recovery time: 80ns
On-state resistance: 135mΩ
Drain current: 7A
Gate-source voltage: ±20V
Power dissipation: 36W
Pulsed drain current: 39A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 7.2nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO18N20T2 pVersion=0046&contRep=ZT&docId=005056AB281E1FD0A280B1C3D43A60E1&compId=WMO18N20T2.pdf?ci_sign=3f8eda1ad88a68d2e6a821d6a4d659c3e84a33c2
WMO18N20T2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 83W; TO252
Case: TO252
Mounting: SMD
On-state resistance: 0.13Ω
Drain current: 18A
Gate-source voltage: ±20V
Power dissipation: 83W
Pulsed drain current: 72A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 11nC
auf Bestellung 81 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
66+1.09 EUR
81+0.89 EUR
Mindestbestellmenge: 66
Im Einkaufswagen  Stück im Wert von  UAH
WMO18N20T2 pVersion=0046&contRep=ZT&docId=005056AB281E1FD0A280B1C3D43A60E1&compId=WMO18N20T2.pdf?ci_sign=3f8eda1ad88a68d2e6a821d6a4d659c3e84a33c2
WMO18N20T2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; Idm: 72A; 83W; TO252
Case: TO252
Mounting: SMD
On-state resistance: 0.13Ω
Drain current: 18A
Gate-source voltage: ±20V
Power dissipation: 83W
Pulsed drain current: 72A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 11nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 81 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
66+1.09 EUR
81+0.89 EUR
100+0.72 EUR
250+0.62 EUR
1000+0.6 EUR
Mindestbestellmenge: 66
Im Einkaufswagen  Stück im Wert von  UAH
WMO18N50C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 10A; Idm: 50A; 75W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 10A
Pulsed drain current: 50A
Power dissipation: 75W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 13nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO18P10TS
Hersteller: WAYON
WMO18P10TS-CYG SMD P channel transistors
auf Bestellung 125 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
76+0.94 EUR
125+0.57 EUR
5000+0.35 EUR
Mindestbestellmenge: 76
Im Einkaufswagen  Stück im Wert von  UAH
WMO190N03TS
WMO190N03TS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 190A; Idm: 760A; 166.7W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 190A
Pulsed drain current: 760A
Power dissipation: 166.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 3mΩ
Mounting: SMD
Gate charge: 0.1µC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO190N15HG4
Hersteller: WAYON
WMO190N15HG4-CYG SMD N channel transistors
auf Bestellung 85 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
60+1.2 EUR
85+0.84 EUR
5000+0.68 EUR
Mindestbestellmenge: 60
Im Einkaufswagen  Stück im Wert von  UAH
WMO20N15T2
WMO20N15T2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 12.6A; Idm: 80A; 56.8W; TO252
Case: TO252
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7.8nC
On-state resistance: 88mΩ
Drain current: 12.6A
Power dissipation: 56.8W
Pulsed drain current: 80A
Drain-source voltage: 150V
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 433 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
85+0.84 EUR
144+0.5 EUR
160+0.45 EUR
180+0.4 EUR
250+0.36 EUR
Mindestbestellmenge: 85
Im Einkaufswagen  Stück im Wert von  UAH
WMO20N15T2
WMO20N15T2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 12.6A; Idm: 80A; 56.8W; TO252
Case: TO252
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: ±20V
Gate charge: 7.8nC
On-state resistance: 88mΩ
Drain current: 12.6A
Power dissipation: 56.8W
Pulsed drain current: 80A
Drain-source voltage: 150V
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 433 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
85+0.84 EUR
144+0.5 EUR
160+0.45 EUR
180+0.4 EUR
250+0.36 EUR
1000+0.35 EUR
Mindestbestellmenge: 85
Im Einkaufswagen  Stück im Wert von  UAH
WMO20N20JN pVersion=0046&contRep=ZT&docId=005056AB281E1FD097CAE8F945CEA0E1&compId=WMx20N20JN.pdf?ci_sign=e7d89bf9d1f1284debcba6443db31cc2b39e3d0b
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 12A; Idm: 60A; 59W; TO252
Case: TO252
Mounting: SMD
Gate-source voltage: ±20V
Gate charge: 4.1nC
Reverse recovery time: 110ns
On-state resistance: 80mΩ
Drain current: 12A
Power dissipation: 59W
Pulsed drain current: 60A
Drain-source voltage: 200V
Kind of package: reel; tape
Kind of channel: enhancement
Polarisation: unipolar
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO20N65EM
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; TO252
Type of transistor: N-MOSFET
Technology: WMOS™ EM
Polarisation: unipolar
Drain-source voltage: 650V
Case: TO252
On-state resistance: 0.24Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO20P04T1
WMO20P04T1
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -20A; Idm: -80A; 27.8W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -20A
Pulsed drain current: -80A
Power dissipation: 27.8W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO20P15TS
Hersteller: WAYON
WMO20P15TS-CYG SMD P channel transistors
auf Bestellung 152 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
69+1.05 EUR
152+0.47 EUR
5000+0.41 EUR
Mindestbestellmenge: 69
Im Einkaufswagen  Stück im Wert von  UAH
WMO22N50C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 11A; Idm: 60A; 86W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 11A
Pulsed drain current: 60A
Power dissipation: 86W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: SMD
Gate charge: 14.6nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO240N10LG2
WMO240N10LG2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; Idm: 144A; 56.8W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Pulsed drain current: 144A
Power dissipation: 56.8W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 15.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2385 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
132+0.54 EUR
250+0.29 EUR
278+0.26 EUR
315+0.23 EUR
350+0.2 EUR
Mindestbestellmenge: 132
Im Einkaufswagen  Stück im Wert von  UAH
WMO240N10LG2
WMO240N10LG2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 36A; Idm: 144A; 56.8W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 36A
Pulsed drain current: 144A
Power dissipation: 56.8W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 15.8nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2385 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
132+0.54 EUR
250+0.29 EUR
278+0.26 EUR
315+0.23 EUR
350+0.2 EUR
Mindestbestellmenge: 132
Im Einkaufswagen  Stück im Wert von  UAH
WMO25N06TS
WMO25N06TS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 41.7W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 41.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1895 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
290+0.25 EUR
382+0.19 EUR
428+0.17 EUR
481+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
WMO25N06TS
WMO25N06TS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 41.7W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 41.7W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 32mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1895 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
120+0.6 EUR
290+0.25 EUR
382+0.19 EUR
428+0.17 EUR
481+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
WMO25N10T1
WMO25N10T1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 25A; Idm: 100A; 53.2W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 53.2W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: SMD
Gate charge: 37.9nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 469 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
266+0.27 EUR
296+0.24 EUR
379+0.19 EUR
400+0.18 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
WMO25N10T1
WMO25N10T1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 25A; Idm: 100A; 53.2W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 53.2W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 44mΩ
Mounting: SMD
Gate charge: 37.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 469 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
125+0.57 EUR
266+0.27 EUR
296+0.24 EUR
379+0.19 EUR
400+0.18 EUR
2500+0.17 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
WMO25N50C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 500V; 13A; Idm: 65A; 135W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 500V
Drain current: 13A
Pulsed drain current: 65A
Power dissipation: 135W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO25P03TS
WMO25P03TS
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -25A; Idm: -100A; 22.5W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -25A
Pulsed drain current: -100A
Power dissipation: 22.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
114+0.63 EUR
277+0.26 EUR
365+0.2 EUR
414+0.17 EUR
439+0.16 EUR
463+0.15 EUR
Mindestbestellmenge: 114
Im Einkaufswagen  Stück im Wert von  UAH
WMO25P03TS
WMO25P03TS
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -25A; Idm: -100A; 22.5W; TO252
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -25A
Pulsed drain current: -100A
Power dissipation: 22.5W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 500 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
114+0.63 EUR
277+0.26 EUR
365+0.2 EUR
414+0.17 EUR
439+0.16 EUR
463+0.15 EUR
Mindestbestellmenge: 114
Im Einkaufswagen  Stück im Wert von  UAH
WMO25P04TS
Hersteller: WAYON
WMO25P04TS-CYG SMD P channel transistors
auf Bestellung 498 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
94+0.76 EUR
400+0.18 EUR
424+0.17 EUR
5000+0.16 EUR
Mindestbestellmenge: 94
Im Einkaufswagen  Stück im Wert von  UAH
WMO25P06T1
Hersteller: WAYON
WMO25P06T1-CYG SMD P channel transistors
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
9+7.95 EUR
66+1.09 EUR
181+0.4 EUR
5000+0.24 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
WMO26N60C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Power dissipation: 135W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 22.1nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO26N65C4 pVersion=0046&contRep=ZT&docId=005056AB281E1EDE91DF84CA500A80D5&compId=WMx26N65C4.pdf?ci_sign=7e5a9d77b19220996fa7d9874ced508749bc635b
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Power dissipation: 135W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 22.1nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO26N65F2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 650V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO28N15T2
Hersteller: WAYON
WMO28N15T2-CYG SMD N channel transistors
auf Bestellung 53 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
53+1.34 EUR
102+0.7 EUR
5000+0.42 EUR
Mindestbestellmenge: 53
Im Einkaufswagen  Stück im Wert von  UAH
WMO2N100D1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1kV; 2A; Idm: 8A; 60W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1kV
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 60W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 6.3Ω
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO30P03TS
Hersteller: WAYON
WMO30P03TS-CYG SMD P channel transistors
auf Bestellung 366 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
91+0.79 EUR
366+0.2 EUR
5000+0.17 EUR
Mindestbestellmenge: 91
Im Einkaufswagen  Stück im Wert von  UAH
WMO30P10TS
Hersteller: WAYON
WMO30P10TS-CYG SMD P channel transistors
auf Bestellung 133 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
99+0.73 EUR
133+0.54 EUR
147+0.49 EUR
5000+0.29 EUR
Mindestbestellmenge: 99
Im Einkaufswagen  Stück im Wert von  UAH
WMO35N06T1
WMO35N06T1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35A; Idm: 140A; 44.6W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Pulsed drain current: 140A
Power dissipation: 44.6W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 14.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 445 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
117+0.61 EUR
254+0.28 EUR
281+0.25 EUR
363+0.2 EUR
385+0.19 EUR
Mindestbestellmenge: 117
Im Einkaufswagen  Stück im Wert von  UAH
WMO35N06T1
WMO35N06T1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35A; Idm: 140A; 44.6W; TO252
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Pulsed drain current: 140A
Power dissipation: 44.6W
Case: TO252
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 14.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 445 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
117+0.61 EUR
254+0.28 EUR
281+0.25 EUR
363+0.2 EUR
385+0.19 EUR
2500+0.18 EUR
Mindestbestellmenge: 117
Im Einkaufswagen  Stück im Wert von  UAH
WMO35P04T1
Hersteller: WAYON
WMO35P04T1-CYG SMD P channel transistors
auf Bestellung 422 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
118+0.61 EUR
341+0.21 EUR
360+0.2 EUR
Mindestbestellmenge: 118
Im Einkaufswagen  Stück im Wert von  UAH
WMO35P06TS
Hersteller: WAYON
WMO35P06TS-CYG SMD P channel transistors
auf Bestellung 169 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
77+0.94 EUR
169+0.43 EUR
5000+0.35 EUR
Mindestbestellmenge: 77
Im Einkaufswagen  Stück im Wert von  UAH
WMO3N120D1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.2kV; 3A; Idm: 12A; 62.5W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 3A
Pulsed drain current: 12A
Power dissipation: 62.5W
Case: TO252
Gate-source voltage: ±30V
On-state resistance: 6.3Ω
Mounting: SMD
Gate charge: 22.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMO40N04TS
Hersteller: WAYON
WMO40N04TS-CYG SMD N channel transistors
auf Bestellung 486 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
124+0.58 EUR
451+0.16 EUR
477+0.15 EUR
5000+0.14 EUR
Mindestbestellmenge: 124
Im Einkaufswagen  Stück im Wert von  UAH
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