| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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WSRSIC004065NPF | WAYON |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; Ir: 0.8uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO220FP-2 Max. forward voltage: 1.38V Max. forward impulse current: 30A Kind of package: tube Leakage current: 0.8µA |
auf Bestellung 71 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WSRSIC008065NNI | WAYON |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ACIns; tube Mounting: THT Max. forward impulse current: 50A Max. forward voltage: 1.38V Technology: SiC Max. off-state voltage: 650V Load current: 8A Kind of package: tube Semiconductor structure: single diode Leakage current: 1.2µA Case: TO220ACIns Type of diode: Schottky rectifying |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WSRSIC008065NPC | WAYON |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ir: 1.2uA Mounting: THT Max. forward impulse current: 65A Max. forward voltage: 1.38V Technology: SiC Max. off-state voltage: 650V Load current: 8A Kind of package: tube Semiconductor structure: single diode Leakage current: 1.2µA Case: TO220-2 Type of diode: Schottky rectifying |
auf Bestellung 12 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| WSRSIC008065NPD | WAYON |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN5x6; SiC; SMD; 650V; 8A; tape Mounting: SMD Max. forward impulse current: 45A Max. forward voltage: 1.38V Technology: SiC Max. off-state voltage: 650V Load current: 8A Kind of package: tape Semiconductor structure: single diode Leakage current: 1.2µA Case: DFN5x6 Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| WSRSIC008065NPE | WAYON |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DFN8x8; SiC; SMD; 650V; 8A; tape Mounting: SMD Max. forward impulse current: 45A Max. forward voltage: 1.38V Technology: SiC Max. off-state voltage: 650V Load current: 8A Kind of package: tape Semiconductor structure: single diode Leakage current: 1.2µA Case: DFN8x8 Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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WSRSIC008065NPF | WAYON |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220FP-2; Ir: 1.2uA Mounting: THT Max. forward impulse current: 50A Max. forward voltage: 1.38V Technology: SiC Max. off-state voltage: 650V Load current: 8A Kind of package: tube Semiconductor structure: single diode Leakage current: 1.2µA Case: TO220FP-2 Type of diode: Schottky rectifying |
auf Bestellung 8 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WSRSIC008065NPO | WAYON |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 8A; tape Mounting: SMD Max. forward impulse current: 50A Max. forward voltage: 1.38V Technology: SiC Max. off-state voltage: 650V Load current: 8A Kind of package: tape Semiconductor structure: single diode Leakage current: 1.2µA Case: DPAK Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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WSRSIC010120NP4 | WAYON |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; Ir: 5uA Mounting: THT Max. forward impulse current: 95A Max. forward voltage: 1.4V Technology: SiC Max. off-state voltage: 1.2kV Load current: 10A Kind of package: tube Semiconductor structure: single diode Leakage current: 5µA Case: TO247-2 Type of diode: Schottky rectifying |
auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WSRSIC015065NPC | WAYON |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 5uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 15A Semiconductor structure: single diode Case: TO220-2 Max. forward voltage: 1.38V Max. forward impulse current: 95A Leakage current: 5µA Kind of package: tube |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WSRSIC020065NNI | WAYON |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220ACIns; Ir: 3uA Mounting: THT Max. forward impulse current: 130A Max. forward voltage: 1.32V Technology: SiC Max. off-state voltage: 650V Load current: 20A Kind of package: tube Semiconductor structure: single diode Leakage current: 3µA Case: TO220ACIns Type of diode: Schottky rectifying |
auf Bestellung 50 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WSRSIC020065NP4 | WAYON |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; Ir: 3uA Mounting: THT Max. forward impulse current: 170A Max. forward voltage: 1.32V Technology: SiC Max. off-state voltage: 650V Load current: 20A Kind of package: tube Semiconductor structure: single diode Leakage current: 3µA Case: TO247-2 Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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WSRSIC020065NP8 | WAYON |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube Mounting: THT Max. forward impulse current: 140A Max. forward voltage: 1.38V Technology: SiC Max. off-state voltage: 650V Load current: 10A x2 Kind of package: tube Semiconductor structure: common cathode; double Leakage current: 1.5µA Case: TO247-3 Type of diode: Schottky rectifying |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WSRSIC020065NPC | WAYON |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220-2; Ir: 6uA Mounting: THT Max. forward impulse current: 152A Max. forward voltage: 1.38V Technology: SiC Max. off-state voltage: 650V Load current: 20A Kind of package: tube Semiconductor structure: single diode Leakage current: 6µA Case: TO220-2 Type of diode: Schottky rectifying |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WSRSIC020065NPL | WAYON |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO3PF; Ufmax: 1.32V Mounting: THT Max. forward impulse current: 130A Max. forward voltage: 1.32V Technology: SiC Max. off-state voltage: 650V Load current: 20A Kind of package: tube Semiconductor structure: single diode Leakage current: 3µA Case: TO3PF Type of diode: Schottky rectifying |
auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WSRSIC020065NPM | WAYON |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 20A; tape Mounting: SMD Max. forward impulse current: 130A Max. forward voltage: 1.32V Technology: SiC Max. off-state voltage: 650V Load current: 20A Kind of package: tape Semiconductor structure: single diode Leakage current: 2µA Case: D2PAK Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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WSRSIC020120NP4 | WAYON |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ir: 10uA Mounting: THT Max. forward impulse current: 160A Max. forward voltage: 1.4V Technology: SiC Max. off-state voltage: 1.2kV Load current: 20A Kind of package: tube Semiconductor structure: single diode Leakage current: 10µA Case: TO247-2 Type of diode: Schottky rectifying |
auf Bestellung 24 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WSRSIC020120NP8 | WAYON |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; Ir: 5uA Mounting: THT Max. forward impulse current: 180A Max. forward voltage: 1.4V Technology: SiC Max. off-state voltage: 1.2kV Load current: 10A x2 Kind of package: tube Semiconductor structure: common cathode; double Leakage current: 5µA Case: TO247-3 Type of diode: Schottky rectifying |
auf Bestellung 30 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WSRSIC030065NPS | WAYON |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO247-3; Ir: 2uA Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 30A Semiconductor structure: single diode Case: TO247-3 Max. forward voltage: 1.38V Max. forward impulse current: 220A Leakage current: 2µA Kind of package: tube |
auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WSRSIC030120NP4 | WAYON |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; TO247-2; Ir: 13uA Mounting: THT Max. forward impulse current: 220A Max. forward voltage: 1.4V Technology: SiC Max. off-state voltage: 1.2kV Load current: 30A Kind of package: tube Semiconductor structure: single diode Leakage current: 13µA Case: TO247-2 Type of diode: Schottky rectifying |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WSRSIC030120NP8 | WAYON |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; Ir: 8uA Mounting: THT Max. forward impulse current: 270A Max. forward voltage: 1.43V Technology: SiC Max. off-state voltage: 1.2kV Load current: 15A x2 Kind of package: tube Semiconductor structure: common cathode; double Leakage current: 8µA Case: TO247-3 Type of diode: Schottky rectifying |
auf Bestellung 28 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WSRSIC040120NP4 | WAYON |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; Ir: 15uA Mounting: THT Max. forward impulse current: 325A Max. forward voltage: 1.4V Technology: SiC Max. off-state voltage: 1.2kV Load current: 40A Kind of package: tube Semiconductor structure: single diode Leakage current: 15µA Case: TO247-2 Type of diode: Schottky rectifying |
auf Bestellung 27 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WSRSIC040120NP8 | WAYON |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; tube Mounting: THT Max. forward impulse current: 0.32kA Max. forward voltage: 1.4V Technology: SiC Max. off-state voltage: 1.2kV Load current: 20A x2 Kind of package: tube Semiconductor structure: common cathode; double Leakage current: 10µA Case: TO247-3 Type of diode: Schottky rectifying |
auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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WSRSIC060120NP4 | WAYON |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 60A; TO247-2; Ir: 25uA Mounting: THT Max. forward impulse current: 340A Max. forward voltage: 1.4V Technology: SiC Max. off-state voltage: 1.2kV Load current: 60A Kind of package: tube Semiconductor structure: single diode Leakage current: 25µA Case: TO247-2 Type of diode: Schottky rectifying |
auf Bestellung 28 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
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X0405-600AM | WAYON |
 Category: SMD/THT thyristorsDescription: Thyristor; 600V; Ifmax: 4A; Igt: 0.2mA; TO252; SMD; reel,tape Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 4A Gate current: 0.2mA Case: TO252 Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 30A Features of semiconductor devices: sensitive gate |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| X0405-600AV | WAYON |
Category: SMD/THT thyristors Description: Thyristor; 600V; Ifmax: 4A; Igt: 0.2mA; TO126; THT; tube; Ifsm: 30A Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 4A Gate current: 0.2mA Case: TO126 Mounting: THT Kind of package: tube Max. forward impulse current: 30A Features of semiconductor devices: sensitive gate |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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X0405-610AM | WAYON |
Category: SMD/THT thyristors Description: Thyristor; 600V; Ifmax: 4A; Igt: 0.2mA; TO252; SMD; reel,tape Type of thyristor: thyristor Max. off-state voltage: 0.6kV Max. load current: 4A Gate current: 0.2mA Case: TO252 Mounting: SMD Kind of package: reel; tape Max. forward impulse current: 30A Features of semiconductor devices: sensitive gate |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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Транзистор польовий WMK20N65C2 WAYON | WAYON | Транзистор польовий TO220-3 MOSFET n-ch Vds=650V, Id=15A, Rds=0,300 Ohm, Pd=86W Транзистори польові |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| WSRSIC004065NPF |
Hersteller: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; Ir: 0.8uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.38V
Max. forward impulse current: 30A
Kind of package: tube
Leakage current: 0.8µA
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; Ir: 0.8uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.38V
Max. forward impulse current: 30A
Kind of package: tube
Leakage current: 0.8µA
auf Bestellung 71 Stücke:
Lieferzeit 14-21 Tag (e)
| WSRSIC008065NNI |
Hersteller: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ACIns; tube
Mounting: THT
Max. forward impulse current: 50A
Max. forward voltage: 1.38V
Technology: SiC
Max. off-state voltage: 650V
Load current: 8A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 1.2µA
Case: TO220ACIns
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ACIns; tube
Mounting: THT
Max. forward impulse current: 50A
Max. forward voltage: 1.38V
Technology: SiC
Max. off-state voltage: 650V
Load current: 8A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 1.2µA
Case: TO220ACIns
Type of diode: Schottky rectifying
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
| WSRSIC008065NPC |
Hersteller: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ir: 1.2uA
Mounting: THT
Max. forward impulse current: 65A
Max. forward voltage: 1.38V
Technology: SiC
Max. off-state voltage: 650V
Load current: 8A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 1.2µA
Case: TO220-2
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ir: 1.2uA
Mounting: THT
Max. forward impulse current: 65A
Max. forward voltage: 1.38V
Technology: SiC
Max. off-state voltage: 650V
Load current: 8A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 1.2µA
Case: TO220-2
Type of diode: Schottky rectifying
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
| WSRSIC008065NPD |
Hersteller: WAYON
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SiC; SMD; 650V; 8A; tape
Mounting: SMD
Max. forward impulse current: 45A
Max. forward voltage: 1.38V
Technology: SiC
Max. off-state voltage: 650V
Load current: 8A
Kind of package: tape
Semiconductor structure: single diode
Leakage current: 1.2µA
Case: DFN5x6
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SiC; SMD; 650V; 8A; tape
Mounting: SMD
Max. forward impulse current: 45A
Max. forward voltage: 1.38V
Technology: SiC
Max. off-state voltage: 650V
Load current: 8A
Kind of package: tape
Semiconductor structure: single diode
Leakage current: 1.2µA
Case: DFN5x6
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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| WSRSIC008065NPE |
Hersteller: WAYON
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8; SiC; SMD; 650V; 8A; tape
Mounting: SMD
Max. forward impulse current: 45A
Max. forward voltage: 1.38V
Technology: SiC
Max. off-state voltage: 650V
Load current: 8A
Kind of package: tape
Semiconductor structure: single diode
Leakage current: 1.2µA
Case: DFN8x8
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN8x8; SiC; SMD; 650V; 8A; tape
Mounting: SMD
Max. forward impulse current: 45A
Max. forward voltage: 1.38V
Technology: SiC
Max. off-state voltage: 650V
Load current: 8A
Kind of package: tape
Semiconductor structure: single diode
Leakage current: 1.2µA
Case: DFN8x8
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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| WSRSIC008065NPF |
Hersteller: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220FP-2; Ir: 1.2uA
Mounting: THT
Max. forward impulse current: 50A
Max. forward voltage: 1.38V
Technology: SiC
Max. off-state voltage: 650V
Load current: 8A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 1.2µA
Case: TO220FP-2
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220FP-2; Ir: 1.2uA
Mounting: THT
Max. forward impulse current: 50A
Max. forward voltage: 1.38V
Technology: SiC
Max. off-state voltage: 650V
Load current: 8A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 1.2µA
Case: TO220FP-2
Type of diode: Schottky rectifying
auf Bestellung 8 Stücke:
Lieferzeit 14-21 Tag (e)
| WSRSIC008065NPO |
Hersteller: WAYON
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 8A; tape
Mounting: SMD
Max. forward impulse current: 50A
Max. forward voltage: 1.38V
Technology: SiC
Max. off-state voltage: 650V
Load current: 8A
Kind of package: tape
Semiconductor structure: single diode
Leakage current: 1.2µA
Case: DPAK
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 650V; 8A; tape
Mounting: SMD
Max. forward impulse current: 50A
Max. forward voltage: 1.38V
Technology: SiC
Max. off-state voltage: 650V
Load current: 8A
Kind of package: tape
Semiconductor structure: single diode
Leakage current: 1.2µA
Case: DPAK
Type of diode: Schottky rectifying
Produkt ist nicht verfügbar
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| WSRSIC010120NP4 |
Hersteller: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; Ir: 5uA
Mounting: THT
Max. forward impulse current: 95A
Max. forward voltage: 1.4V
Technology: SiC
Max. off-state voltage: 1.2kV
Load current: 10A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 5µA
Case: TO247-2
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; Ir: 5uA
Mounting: THT
Max. forward impulse current: 95A
Max. forward voltage: 1.4V
Technology: SiC
Max. off-state voltage: 1.2kV
Load current: 10A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 5µA
Case: TO247-2
Type of diode: Schottky rectifying
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
| WSRSIC015065NPC |
Hersteller: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 5uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.38V
Max. forward impulse current: 95A
Leakage current: 5µA
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 15A; TO220-2; Ir: 5uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 15A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.38V
Max. forward impulse current: 95A
Leakage current: 5µA
Kind of package: tube
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
| WSRSIC020065NNI |
Hersteller: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220ACIns; Ir: 3uA
Mounting: THT
Max. forward impulse current: 130A
Max. forward voltage: 1.32V
Technology: SiC
Max. off-state voltage: 650V
Load current: 20A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 3µA
Case: TO220ACIns
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220ACIns; Ir: 3uA
Mounting: THT
Max. forward impulse current: 130A
Max. forward voltage: 1.32V
Technology: SiC
Max. off-state voltage: 650V
Load current: 20A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 3µA
Case: TO220ACIns
Type of diode: Schottky rectifying
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
| WSRSIC020065NP4 |
Hersteller: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; Ir: 3uA
Mounting: THT
Max. forward impulse current: 170A
Max. forward voltage: 1.32V
Technology: SiC
Max. off-state voltage: 650V
Load current: 20A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 3µA
Case: TO247-2
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO247-2; Ir: 3uA
Mounting: THT
Max. forward impulse current: 170A
Max. forward voltage: 1.32V
Technology: SiC
Max. off-state voltage: 650V
Load current: 20A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 3µA
Case: TO247-2
Type of diode: Schottky rectifying
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| WSRSIC020065NP8 |
Hersteller: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Mounting: THT
Max. forward impulse current: 140A
Max. forward voltage: 1.38V
Technology: SiC
Max. off-state voltage: 650V
Load current: 10A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Leakage current: 1.5µA
Case: TO247-3
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube
Mounting: THT
Max. forward impulse current: 140A
Max. forward voltage: 1.38V
Technology: SiC
Max. off-state voltage: 650V
Load current: 10A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Leakage current: 1.5µA
Case: TO247-3
Type of diode: Schottky rectifying
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| WSRSIC020065NPC |
Hersteller: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220-2; Ir: 6uA
Mounting: THT
Max. forward impulse current: 152A
Max. forward voltage: 1.38V
Technology: SiC
Max. off-state voltage: 650V
Load current: 20A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 6µA
Case: TO220-2
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220-2; Ir: 6uA
Mounting: THT
Max. forward impulse current: 152A
Max. forward voltage: 1.38V
Technology: SiC
Max. off-state voltage: 650V
Load current: 20A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 6µA
Case: TO220-2
Type of diode: Schottky rectifying
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| WSRSIC020065NPL |
Hersteller: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO3PF; Ufmax: 1.32V
Mounting: THT
Max. forward impulse current: 130A
Max. forward voltage: 1.32V
Technology: SiC
Max. off-state voltage: 650V
Load current: 20A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 3µA
Case: TO3PF
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO3PF; Ufmax: 1.32V
Mounting: THT
Max. forward impulse current: 130A
Max. forward voltage: 1.32V
Technology: SiC
Max. off-state voltage: 650V
Load current: 20A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 3µA
Case: TO3PF
Type of diode: Schottky rectifying
auf Bestellung 13 Stücke:
Lieferzeit 14-21 Tag (e)
| WSRSIC020065NPM |
Hersteller: WAYON
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 20A; tape
Mounting: SMD
Max. forward impulse current: 130A
Max. forward voltage: 1.32V
Technology: SiC
Max. off-state voltage: 650V
Load current: 20A
Kind of package: tape
Semiconductor structure: single diode
Leakage current: 2µA
Case: D2PAK
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; D2PAK; SiC; SMD; 650V; 20A; tape
Mounting: SMD
Max. forward impulse current: 130A
Max. forward voltage: 1.32V
Technology: SiC
Max. off-state voltage: 650V
Load current: 20A
Kind of package: tape
Semiconductor structure: single diode
Leakage current: 2µA
Case: D2PAK
Type of diode: Schottky rectifying
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| WSRSIC020120NP4 |
Hersteller: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ir: 10uA
Mounting: THT
Max. forward impulse current: 160A
Max. forward voltage: 1.4V
Technology: SiC
Max. off-state voltage: 1.2kV
Load current: 20A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 10µA
Case: TO247-2
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20A; TO247-2; Ir: 10uA
Mounting: THT
Max. forward impulse current: 160A
Max. forward voltage: 1.4V
Technology: SiC
Max. off-state voltage: 1.2kV
Load current: 20A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 10µA
Case: TO247-2
Type of diode: Schottky rectifying
auf Bestellung 24 Stücke:
Lieferzeit 14-21 Tag (e)
| WSRSIC020120NP8 |
Hersteller: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; Ir: 5uA
Mounting: THT
Max. forward impulse current: 180A
Max. forward voltage: 1.4V
Technology: SiC
Max. off-state voltage: 1.2kV
Load current: 10A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Leakage current: 5µA
Case: TO247-3
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10Ax2; TO247-3; Ir: 5uA
Mounting: THT
Max. forward impulse current: 180A
Max. forward voltage: 1.4V
Technology: SiC
Max. off-state voltage: 1.2kV
Load current: 10A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Leakage current: 5µA
Case: TO247-3
Type of diode: Schottky rectifying
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
| WSRSIC030065NPS |
Hersteller: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO247-3; Ir: 2uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Case: TO247-3
Max. forward voltage: 1.38V
Max. forward impulse current: 220A
Leakage current: 2µA
Kind of package: tube
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 30A; TO247-3; Ir: 2uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 30A
Semiconductor structure: single diode
Case: TO247-3
Max. forward voltage: 1.38V
Max. forward impulse current: 220A
Leakage current: 2µA
Kind of package: tube
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
| WSRSIC030120NP4 |
Hersteller: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; TO247-2; Ir: 13uA
Mounting: THT
Max. forward impulse current: 220A
Max. forward voltage: 1.4V
Technology: SiC
Max. off-state voltage: 1.2kV
Load current: 30A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 13µA
Case: TO247-2
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; TO247-2; Ir: 13uA
Mounting: THT
Max. forward impulse current: 220A
Max. forward voltage: 1.4V
Technology: SiC
Max. off-state voltage: 1.2kV
Load current: 30A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 13µA
Case: TO247-2
Type of diode: Schottky rectifying
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
| WSRSIC030120NP8 |
Hersteller: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; Ir: 8uA
Mounting: THT
Max. forward impulse current: 270A
Max. forward voltage: 1.43V
Technology: SiC
Max. off-state voltage: 1.2kV
Load current: 15A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Leakage current: 8µA
Case: TO247-3
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; Ir: 8uA
Mounting: THT
Max. forward impulse current: 270A
Max. forward voltage: 1.43V
Technology: SiC
Max. off-state voltage: 1.2kV
Load current: 15A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Leakage current: 8µA
Case: TO247-3
Type of diode: Schottky rectifying
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
| WSRSIC040120NP4 |
Hersteller: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; Ir: 15uA
Mounting: THT
Max. forward impulse current: 325A
Max. forward voltage: 1.4V
Technology: SiC
Max. off-state voltage: 1.2kV
Load current: 40A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 15µA
Case: TO247-2
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 40A; TO247-2; Ir: 15uA
Mounting: THT
Max. forward impulse current: 325A
Max. forward voltage: 1.4V
Technology: SiC
Max. off-state voltage: 1.2kV
Load current: 40A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 15µA
Case: TO247-2
Type of diode: Schottky rectifying
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
| WSRSIC040120NP8 |
Hersteller: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; tube
Mounting: THT
Max. forward impulse current: 0.32kA
Max. forward voltage: 1.4V
Technology: SiC
Max. off-state voltage: 1.2kV
Load current: 20A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Leakage current: 10µA
Case: TO247-3
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 20Ax2; TO247-3; tube
Mounting: THT
Max. forward impulse current: 0.32kA
Max. forward voltage: 1.4V
Technology: SiC
Max. off-state voltage: 1.2kV
Load current: 20A x2
Kind of package: tube
Semiconductor structure: common cathode; double
Leakage current: 10µA
Case: TO247-3
Type of diode: Schottky rectifying
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
| WSRSIC060120NP4 |
Hersteller: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 60A; TO247-2; Ir: 25uA
Mounting: THT
Max. forward impulse current: 340A
Max. forward voltage: 1.4V
Technology: SiC
Max. off-state voltage: 1.2kV
Load current: 60A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 25µA
Case: TO247-2
Type of diode: Schottky rectifying
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 60A; TO247-2; Ir: 25uA
Mounting: THT
Max. forward impulse current: 340A
Max. forward voltage: 1.4V
Technology: SiC
Max. off-state voltage: 1.2kV
Load current: 60A
Kind of package: tube
Semiconductor structure: single diode
Leakage current: 25µA
Case: TO247-2
Type of diode: Schottky rectifying
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
| X0405-600AM |
|
Hersteller: WAYON
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 4A; Igt: 0.2mA; TO252; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 4A
Gate current: 0.2mA
Case: TO252
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 30A
Features of semiconductor devices: sensitive gate
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 4A; Igt: 0.2mA; TO252; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 4A
Gate current: 0.2mA
Case: TO252
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 30A
Features of semiconductor devices: sensitive gate
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| X0405-600AV |
|
Hersteller: WAYON
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 4A; Igt: 0.2mA; TO126; THT; tube; Ifsm: 30A
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 4A
Gate current: 0.2mA
Case: TO126
Mounting: THT
Kind of package: tube
Max. forward impulse current: 30A
Features of semiconductor devices: sensitive gate
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 4A; Igt: 0.2mA; TO126; THT; tube; Ifsm: 30A
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 4A
Gate current: 0.2mA
Case: TO126
Mounting: THT
Kind of package: tube
Max. forward impulse current: 30A
Features of semiconductor devices: sensitive gate
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| X0405-610AM |
Hersteller: WAYON
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 4A; Igt: 0.2mA; TO252; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 4A
Gate current: 0.2mA
Case: TO252
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 30A
Features of semiconductor devices: sensitive gate
Category: SMD/THT thyristors
Description: Thyristor; 600V; Ifmax: 4A; Igt: 0.2mA; TO252; SMD; reel,tape
Type of thyristor: thyristor
Max. off-state voltage: 0.6kV
Max. load current: 4A
Gate current: 0.2mA
Case: TO252
Mounting: SMD
Kind of package: reel; tape
Max. forward impulse current: 30A
Features of semiconductor devices: sensitive gate
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| Транзистор польовий WMK20N65C2 WAYON |
Hersteller: WAYON
Транзистор польовий TO220-3 MOSFET n-ch Vds=650V, Id=15A, Rds=0,300 Ohm, Pd=86W Транзистори польові
Транзистор польовий TO220-3 MOSFET n-ch Vds=650V, Id=15A, Rds=0,300 Ohm, Pd=86W Транзистори польові
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