| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
|---|---|---|---|---|---|---|---|
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WMQ30P03T1 | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -30A; Idm: -120A; 29.7W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -30A Pulsed drain current: -120A Power dissipation: 29.7W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 16mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 483 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WMQ30P04T1 | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -40V; -30A; Idm: -120A; 21W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -40V Drain current: -30A Pulsed drain current: -120A Power dissipation: 21W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 13mΩ Mounting: SMD Gate charge: 28nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 330 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WMQ35P02TS | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -35A; Idm: -140A; 24W Case: PDFN3030-8 Power dissipation: 24W Gate charge: 19nC Polarisation: unipolar Drain current: -35A Kind of channel: enhancement Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±10V Kind of package: reel; tape On-state resistance: 13mΩ Mounting: SMD Pulsed drain current: -140A |
auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WMQ40DN03T1 | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 40A; Idm: 160A; 28.4W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 160A Power dissipation: 28.4W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 9.5nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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WMQ40N03T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 160A; 59W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Power dissipation: 59W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 5mΩ Mounting: SMD Kind of channel: enhancement Pulsed drain current: 160A Gate charge: 20nC Kind of package: reel; tape |
auf Bestellung 141 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WMQ46N03T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 46A; Idm: 184A; 30W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 46A Pulsed drain current: 184A Power dissipation: 30W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Gate charge: 21nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 411 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WMQ50N04T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 200A; 22.7W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 50A Power dissipation: 22.7W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 7.2mΩ Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape Pulsed drain current: 200A Gate charge: 36nC |
auf Bestellung 395 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WMQ55N04T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 55A; Idm: 220A; 40W; PDFN3030-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 55A Pulsed drain current: 220A Power dissipation: 40W Case: PDFN3030-8 Gate-source voltage: ±20V On-state resistance: 5.5mΩ Mounting: SMD Gate charge: 30nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 455 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WMQ55P02T1 | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -55A; Idm: -220A; 39W Case: PDFN3030-8 Power dissipation: 39W Gate charge: 43nC Polarisation: unipolar Drain current: -55A Kind of channel: enhancement Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±10V Kind of package: reel; tape On-state resistance: 8.2mΩ Mounting: SMD Pulsed drain current: -220A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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WMQ80N03T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 320A; 44.6W Mounting: SMD Pulsed drain current: 320A Power dissipation: 44.6W Gate charge: 32nC Polarisation: unipolar Drain current: 80A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: PDFN3030-8 On-state resistance: 3.4mΩ |
auf Bestellung 2930 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WMR050N03LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 68A; 2.4W; DFN2020-6 Mounting: SMD Pulsed drain current: 68A Power dissipation: 2.4W Gate charge: 16nC Polarisation: unipolar Drain current: 17A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: DFN2020-6 On-state resistance: 5.4mΩ |
auf Bestellung 328 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WMR05N10TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 24A; 15W; DFN2020-6 Mounting: SMD Polarisation: unipolar Drain current: 5A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: DFN2020-6 On-state resistance: 0.26Ω Pulsed drain current: 24A Power dissipation: 15W Gate charge: 9.5nC |
auf Bestellung 990 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WMR07N03T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 7A; Idm: 35A; 1.6W; DFN2020-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 7A Pulsed drain current: 35A Power dissipation: 1.6W Case: DFN2020-6 On-state resistance: 18mΩ Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 990 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WMR07N06TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 7A; Idm: 28A; 2.7W; DFN2020-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 7A Pulsed drain current: 28A Power dissipation: 2.7W Case: DFN2020-6 On-state resistance: 33mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 490 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WMR07P03TS | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -28A; 1.8W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -30V Drain current: -7A Pulsed drain current: -28A Power dissipation: 1.8W Case: DFN2020-6 Gate-source voltage: ±20V On-state resistance: 23mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 490 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WMR10N03T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 40A; 26.6W; DFN2020-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 8A Pulsed drain current: 40A Power dissipation: 26.6W Case: DFN2020-6 Gate-source voltage: ±20V On-state resistance: 16.5mΩ Mounting: SMD Gate charge: 9.9nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WMR12P02T1 | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -11.5A; Idm: -46A; 3.1W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -11.5A Pulsed drain current: -46A Power dissipation: 3.1W Case: DFN2020-6 Gate-source voltage: ±12V On-state resistance: 17mΩ Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 975 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WMR13N03T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 50A; 2.1W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 12.5A Pulsed drain current: 50A Power dissipation: 2.1W Case: DFN2020-6 Gate-source voltage: ±12V On-state resistance: 11mΩ Mounting: SMD Gate charge: 10nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 465 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WMR140NV6LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 9A; Idm: 36A; 2.1W; DFN2020-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 65V Drain current: 9A Pulsed drain current: 36A Power dissipation: 2.1W Case: DFN2020-6 Gate-source voltage: ±20V On-state resistance: 14.5mΩ Mounting: SMD Gate charge: 14nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 400 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WMR15N02T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 15A; Idm: 60A; 2.2W; DFN2020-6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 15A Pulsed drain current: 60A Power dissipation: 2.2W Case: DFN2020-6 Gate-source voltage: ±10V On-state resistance: 6.5mΩ Mounting: SMD Gate charge: 24nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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WMR15N03TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 14.5A; Idm: 58A; 2.2W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 14.5A Pulsed drain current: 58A Power dissipation: 2.2W Case: DFN2020-6 Gate-source voltage: ±20V On-state resistance: 6.8mΩ Mounting: SMD Gate charge: 27.2nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 365 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WMS02P15TS | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -150V; -1.5A; Idm: -6A; 3.1W; SOP8 Mounting: SMD Pulsed drain current: -6A Power dissipation: 3.1W Gate charge: 9.6nC Polarisation: unipolar Drain current: -1.5A Kind of channel: enhancement Drain-source voltage: -150V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SOP8 On-state resistance: 0.85Ω |
auf Bestellung 495 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WMS032N04LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 18A; Idm: 165A; 22W; SOP8 Pulsed drain current: 165A Power dissipation: 22W Gate charge: 22.5nC Polarisation: unipolar Drain current: 18A Kind of channel: enhancement Drain-source voltage: 40V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SOP8 On-state resistance: 5.2mΩ Mounting: SMD |
auf Bestellung 90 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WMS048NV6LG4 | WAYON |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 65V; 18.5A; Idm: 74A; 3.1W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 65V Drain current: 18.5A Pulsed drain current: 74A Power dissipation: 3.1W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 5.6mΩ Mounting: SMD Gate charge: 35nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 88 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WMS04N10T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 16A; 3.1W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 4A Pulsed drain current: 16A Power dissipation: 3.1W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: SMD Gate charge: 12nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WMS04N10TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 3.1W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 3.5A Pulsed drain current: 14A Power dissipation: 3.1W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 4nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WMS04P06TS | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3.8A; SOP8 Mounting: SMD Case: SOP8 Polarisation: unipolar Drain current: -3.8A Kind of channel: enhancement Drain-source voltage: -60V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape On-state resistance: 0.105Ω |
auf Bestellung 990 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WMS06N10TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 5.8A; Idm: 23A; 3.1W; SOP8 Mounting: SMD Gate charge: 37.9nC Polarisation: unipolar Drain current: 5.8A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SOP8 On-state resistance: 45mΩ Pulsed drain current: 23A Power dissipation: 3.1W |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WMS080N10LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 260A; 3W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 10A Power dissipation: 3W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 11mΩ Mounting: SMD Kind of channel: enhancement Pulsed drain current: 260A Gate charge: 15.7nC Kind of package: reel; tape |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WMS08DH04T1 | WAYON |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 40/-40V; 7.5/-5.5A; 2.2W; SOP8 Type of transistor: N/P-MOSFET Polarisation: unipolar Power dissipation: 2.2W Case: SOP8 Mounting: SMD Kind of package: reel; tape Drain current: 7.5/-5.5A On-state resistance: 24/47mΩ Gate charge: 26/20nC Gate-source voltage: ±20V Drain-source voltage: 40/-40V Kind of channel: enhancement |
auf Bestellung 488 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WMS08N06TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 32A; 3.1W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 8A Pulsed drain current: 32A Power dissipation: 3.1W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Gate charge: 22nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 788 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WMS090N04LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Case: SOP8 Gate-source voltage: ±20V On-state resistance: 15mΩ Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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WMS090NV6LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 14.5A; Idm: 58A; 3.1W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 65V Drain current: 14.5A Pulsed drain current: 58A Power dissipation: 3.1W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: SMD Gate charge: 21.7nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 323 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WMS09P02TS | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -9A; Idm: -36A; 3W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -9A Pulsed drain current: -36A Power dissipation: 3W Case: SOP8 Gate-source voltage: ±12V On-state resistance: 18mΩ Mounting: SMD Gate charge: 18nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 498 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WMS10DH04TS | WAYON |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 40/-40V; 10/-8A; 3W; SOP8 Type of transistor: N/P-MOSFET Polarisation: unipolar Power dissipation: 3W Case: SOP8 Mounting: SMD Kind of package: reel; tape Drain current: 10/-8A On-state resistance: 16/33mΩ Gate charge: 26/30nC Gate-source voltage: ±20V Drain-source voltage: 40/-40V Kind of channel: enhancement |
auf Bestellung 359 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WMS10DN04TS | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 10A; Idm: 40A; 3W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 10A Power dissipation: 3W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 15.5mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 40A Gate charge: 25.8nC |
auf Bestellung 449 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WMS10N04TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 10A; Idm: 40A; 3W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 10A Pulsed drain current: 40A Power dissipation: 3W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 12.5mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Gate charge: 22.2nC |
auf Bestellung 426 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WMS11P02TS | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -11A; Idm: -44A; 3W; SOP8 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -11A Pulsed drain current: -44A Power dissipation: 3W Case: SOP8 Gate-source voltage: ±12V On-state resistance: 13.5mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||
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WMS140DNV6LG4 | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 65V; 10A; Idm: 40A; 3.1W; SOP8 Mounting: SMD Pulsed drain current: 40A Power dissipation: 3.1W Gate charge: 14nC Polarisation: unipolar Drain current: 10A Kind of channel: enhancement Drain-source voltage: 65V Type of transistor: N-MOSFET x2 Gate-source voltage: ±20V Kind of package: reel; tape Case: SOP8 On-state resistance: 18mΩ |
auf Bestellung 472 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WMS140NV6LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 65V; 11.5A; Idm: 46A; 3.1W; SOP8 Mounting: SMD Pulsed drain current: 46A Power dissipation: 3.1W Gate charge: 14nC Polarisation: unipolar Drain current: 11.5A Kind of channel: enhancement Drain-source voltage: 65V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SOP8 On-state resistance: 15mΩ |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WMS15N03T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 15A; Idm: 60A; 3W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 30V Drain current: 15A Pulsed drain current: 60A Power dissipation: 3W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 4mΩ Mounting: SMD Gate charge: 32nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 440 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WMS15P02T1 | WAYON |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -15A; Idm: -60A; 3.1W; SOP8 Case: SOP8 Power dissipation: 3.1W Gate charge: 43nC Polarisation: unipolar Drain current: -15A Kind of channel: enhancement Drain-source voltage: -20V Type of transistor: P-MOSFET Gate-source voltage: ±10V Kind of package: reel; tape On-state resistance: 8.2mΩ Mounting: SMD Pulsed drain current: -60A |
auf Bestellung 476 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WMS175DN10LG4 | WAYON |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 100V; 8.5A; Idm: 34A; 3.1W; SOP8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 100V Drain current: 8.5A Pulsed drain current: 34A Power dissipation: 3.1W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 21mΩ Mounting: SMD Gate charge: 22.5nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WMS175N10HG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 9A; Idm: 36A; 3.1W; SOP8 Mounting: SMD Polarisation: unipolar Drain current: 9A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SOP8 On-state resistance: 18mΩ Pulsed drain current: 36A Power dissipation: 3.1W Gate charge: 17nC |
auf Bestellung 455 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WMS175N10LG4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 9.5A; Idm: 38A; 3.1W; SOP8 Mounting: SMD Polarisation: unipolar Drain current: 9.5A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SOP8 On-state resistance: 17.5mΩ Pulsed drain current: 38A Power dissipation: 3.1W Gate charge: 22.5nC |
auf Bestellung 475 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WMS240N10LG2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 32A; 3.1W; SOP8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 8A Pulsed drain current: 32A Power dissipation: 3.1W Case: SOP8 Gate-source voltage: ±20V On-state resistance: 24mΩ Mounting: SMD Gate charge: 20nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 500 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WMT04N10TS | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 3.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 3.5A Pulsed drain current: 14A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Gate charge: 4nC Kind of package: reel; tape Kind of channel: enhancement |
auf Bestellung 44 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WMT05N10T1 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 20A; 4.2W; SOT223 Mounting: SMD Polarisation: unipolar Drain current: 5A Kind of channel: enhancement Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: SOT223 On-state resistance: 0.1Ω Pulsed drain current: 20A Power dissipation: 4.2W Gate charge: 20.6nC |
auf Bestellung 238 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WMT4N65D1B | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4A; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4A Case: SOT223 Gate-source voltage: ±30V On-state resistance: 2.55Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5 Stücke Im Einkaufswagen Stück im Wert von UAH | ||
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WMU080N10HG2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 168A; 28.4W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 42A Power dissipation: 28.4W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 8.8mΩ Mounting: THT Kind of channel: enhancement Pulsed drain current: 168A Gate charge: 25.4nC Kind of package: tube |
auf Bestellung 65 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WMX3N150D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 90W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 1.5kV Drain current: 3A Power dissipation: 90W Case: TO3PF Gate-source voltage: ±30V On-state resistance: 5.7Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 12A Gate charge: 40nC |
auf Bestellung 336 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
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WMX4N150D1 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 4A; Idm: 16A; 90W Type of transistor: N-MOSFET Technology: WMOS™ D1 Polarisation: unipolar Drain-source voltage: 1.5kV Drain current: 4A Power dissipation: 90W Case: TO3PF Gate-source voltage: ±30V On-state resistance: 5.4Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 16A Gate charge: 41nC |
auf Bestellung 62 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||
| WMZ13N65EM | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 6.5A; Idm: 35A; 85W Mounting: SMD Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: reel; tape Case: DFN8x8 On-state resistance: 390mΩ Pulsed drain current: 35A Power dissipation: 85W Gate charge: 20.3nC Polarisation: unipolar Technology: WMOS™ EM Drain current: 6.5A Kind of channel: enhancement Drain-source voltage: 650V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
| WMZ26N60C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.5A Power dissipation: 135W Case: DFN8x8 Gate-source voltage: ±30V On-state resistance: 0.205Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 40A Gate charge: 22.1nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
| WMZ26N65C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A Type of transistor: N-MOSFET Technology: WMOS™ C4 Polarisation: unipolar Drain-source voltage: 650V Drain current: 10.5A Pulsed drain current: 40A Power dissipation: 135W Case: DFN8x8 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 22.1nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
| WMZ36N65C4 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 20A; Idm: 100A; 277W Mounting: SMD Pulsed drain current: 100A Power dissipation: 277W Gate charge: 16nC Polarisation: unipolar Technology: WMOS™ C4 Drain current: 20A Kind of channel: enhancement Drain-source voltage: 650V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: reel; tape Case: DFN8x8 On-state resistance: 97mΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
| WMZ53N60F2 | WAYON |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 26A; Idm: 90A; 280W Type of transistor: N-MOSFET Technology: WMOS™ F2 Polarisation: unipolar Drain-source voltage: 600V Drain current: 26A Power dissipation: 280W Case: DFN8x8 Gate-source voltage: ±30V On-state resistance: 78mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 90A Gate charge: 58nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||
| WS05-4RUL SOT23-6 | WAYON |
Transient Voltage Suppressor; protects 4 I/O lines; 400W; 20A; 5V; -55°C~125°C; Odpowiednik: WWS05-4RUL; WS05-4RUL UIWS05-4rul Anzahl je Verpackung: 100 Stücke |
auf Bestellung 45 Stücke: Lieferzeit 7-14 Tag (e) |
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| WS05-4RUL SOT23-6 | WAYON |
Transient Voltage Suppressor; protects 4 I/O lines; 400W; 20A; 5V; -55°C~125°C; Odpowiednik: WWS05-4RUL; WS05-4RUL UIWS05-4rul Anzahl je Verpackung: 100 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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WSRSIC002120NPO | WAYON |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 2A; tape Mounting: SMD Max. forward impulse current: 18A Max. forward voltage: 1.36V Technology: SiC Max. off-state voltage: 1.2kV Load current: 2A Kind of package: tape Semiconductor structure: single diode Leakage current: 1µA Case: DPAK Type of diode: Schottky rectifying |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| WMQ30P03T1 |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -30A; Idm: -120A; 29.7W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -30A
Pulsed drain current: -120A
Power dissipation: 29.7W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -30A; Idm: -120A; 29.7W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -30A
Pulsed drain current: -120A
Power dissipation: 29.7W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 16mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 483 Stücke:
Lieferzeit 14-21 Tag (e)
| WMQ30P04T1 |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -30A; Idm: -120A; 21W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -30A
Pulsed drain current: -120A
Power dissipation: 21W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -30A; Idm: -120A; 21W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -30A
Pulsed drain current: -120A
Power dissipation: 21W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 13mΩ
Mounting: SMD
Gate charge: 28nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 330 Stücke:
Lieferzeit 14-21 Tag (e)
| WMQ35P02TS |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -35A; Idm: -140A; 24W
Case: PDFN3030-8
Power dissipation: 24W
Gate charge: 19nC
Polarisation: unipolar
Drain current: -35A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±10V
Kind of package: reel; tape
On-state resistance: 13mΩ
Mounting: SMD
Pulsed drain current: -140A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -35A; Idm: -140A; 24W
Case: PDFN3030-8
Power dissipation: 24W
Gate charge: 19nC
Polarisation: unipolar
Drain current: -35A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±10V
Kind of package: reel; tape
On-state resistance: 13mΩ
Mounting: SMD
Pulsed drain current: -140A
auf Bestellung 450 Stücke:
Lieferzeit 14-21 Tag (e)
| WMQ40DN03T1 |
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 40A; Idm: 160A; 28.4W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 28.4W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 40A; Idm: 160A; 28.4W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Pulsed drain current: 160A
Power dissipation: 28.4W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMQ40N03T1 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 160A; 59W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 59W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 160A
Gate charge: 20nC
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 160A; 59W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 40A
Power dissipation: 59W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 5mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 160A
Gate charge: 20nC
Kind of package: reel; tape
auf Bestellung 141 Stücke:
Lieferzeit 14-21 Tag (e)
| WMQ46N03T1 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 46A; Idm: 184A; 30W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 30W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 46A; Idm: 184A; 30W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 46A
Pulsed drain current: 184A
Power dissipation: 30W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 411 Stücke:
Lieferzeit 14-21 Tag (e)
| WMQ50N04T1 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 200A; 22.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 22.7W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 200A
Gate charge: 36nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 200A; 22.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Power dissipation: 22.7W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 7.2mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 200A
Gate charge: 36nC
auf Bestellung 395 Stücke:
Lieferzeit 14-21 Tag (e)
| WMQ55N04T1 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 55A; Idm: 220A; 40W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Pulsed drain current: 220A
Power dissipation: 40W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 55A; Idm: 220A; 40W; PDFN3030-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 55A
Pulsed drain current: 220A
Power dissipation: 40W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 5.5mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 455 Stücke:
Lieferzeit 14-21 Tag (e)
| WMQ55P02T1 |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -55A; Idm: -220A; 39W
Case: PDFN3030-8
Power dissipation: 39W
Gate charge: 43nC
Polarisation: unipolar
Drain current: -55A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±10V
Kind of package: reel; tape
On-state resistance: 8.2mΩ
Mounting: SMD
Pulsed drain current: -220A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -55A; Idm: -220A; 39W
Case: PDFN3030-8
Power dissipation: 39W
Gate charge: 43nC
Polarisation: unipolar
Drain current: -55A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±10V
Kind of package: reel; tape
On-state resistance: 8.2mΩ
Mounting: SMD
Pulsed drain current: -220A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMQ80N03T1 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 320A; 44.6W
Mounting: SMD
Pulsed drain current: 320A
Power dissipation: 44.6W
Gate charge: 32nC
Polarisation: unipolar
Drain current: 80A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PDFN3030-8
On-state resistance: 3.4mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 320A; 44.6W
Mounting: SMD
Pulsed drain current: 320A
Power dissipation: 44.6W
Gate charge: 32nC
Polarisation: unipolar
Drain current: 80A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: PDFN3030-8
On-state resistance: 3.4mΩ
auf Bestellung 2930 Stücke:
Lieferzeit 14-21 Tag (e)
| WMR050N03LG4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 68A; 2.4W; DFN2020-6
Mounting: SMD
Pulsed drain current: 68A
Power dissipation: 2.4W
Gate charge: 16nC
Polarisation: unipolar
Drain current: 17A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DFN2020-6
On-state resistance: 5.4mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 68A; 2.4W; DFN2020-6
Mounting: SMD
Pulsed drain current: 68A
Power dissipation: 2.4W
Gate charge: 16nC
Polarisation: unipolar
Drain current: 17A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DFN2020-6
On-state resistance: 5.4mΩ
auf Bestellung 328 Stücke:
Lieferzeit 14-21 Tag (e)
| WMR05N10TS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 24A; 15W; DFN2020-6
Mounting: SMD
Polarisation: unipolar
Drain current: 5A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DFN2020-6
On-state resistance: 0.26Ω
Pulsed drain current: 24A
Power dissipation: 15W
Gate charge: 9.5nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 24A; 15W; DFN2020-6
Mounting: SMD
Polarisation: unipolar
Drain current: 5A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DFN2020-6
On-state resistance: 0.26Ω
Pulsed drain current: 24A
Power dissipation: 15W
Gate charge: 9.5nC
auf Bestellung 990 Stücke:
Lieferzeit 14-21 Tag (e)
| WMR07N03T1 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; Idm: 35A; 1.6W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Pulsed drain current: 35A
Power dissipation: 1.6W
Case: DFN2020-6
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; Idm: 35A; 1.6W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Pulsed drain current: 35A
Power dissipation: 1.6W
Case: DFN2020-6
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 990 Stücke:
Lieferzeit 14-21 Tag (e)
| WMR07N06TS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; Idm: 28A; 2.7W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 2.7W
Case: DFN2020-6
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; Idm: 28A; 2.7W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 2.7W
Case: DFN2020-6
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 490 Stücke:
Lieferzeit 14-21 Tag (e)
| WMR07P03TS |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -28A; 1.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 1.8W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -28A; 1.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 1.8W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 490 Stücke:
Lieferzeit 14-21 Tag (e)
| WMR10N03T1 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 40A; 26.6W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 40A
Power dissipation: 26.6W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 9.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 40A; 26.6W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 40A
Power dissipation: 26.6W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 9.9nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
| WMR12P02T1 |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -11.5A; Idm: -46A; 3.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -11.5A
Pulsed drain current: -46A
Power dissipation: 3.1W
Case: DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -11.5A; Idm: -46A; 3.1W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -11.5A
Pulsed drain current: -46A
Power dissipation: 3.1W
Case: DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 975 Stücke:
Lieferzeit 14-21 Tag (e)
| WMR13N03T1 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 50A; 2.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12.5A
Pulsed drain current: 50A
Power dissipation: 2.1W
Case: DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 50A; 2.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12.5A
Pulsed drain current: 50A
Power dissipation: 2.1W
Case: DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 465 Stücke:
Lieferzeit 14-21 Tag (e)
| WMR140NV6LG4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 9A; Idm: 36A; 2.1W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 2.1W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 9A; Idm: 36A; 2.1W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 2.1W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 14.5mΩ
Mounting: SMD
Gate charge: 14nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 400 Stücke:
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| WMR15N02T1 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 15A; Idm: 60A; 2.2W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 2.2W
Case: DFN2020-6
Gate-source voltage: ±10V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 15A; Idm: 60A; 2.2W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 2.2W
Case: DFN2020-6
Gate-source voltage: ±10V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 24nC
Kind of package: reel; tape
Kind of channel: enhancement
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| WMR15N03TS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14.5A; Idm: 58A; 2.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14.5A
Pulsed drain current: 58A
Power dissipation: 2.2W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Gate charge: 27.2nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 14.5A; Idm: 58A; 2.2W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 14.5A
Pulsed drain current: 58A
Power dissipation: 2.2W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 6.8mΩ
Mounting: SMD
Gate charge: 27.2nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 365 Stücke:
Lieferzeit 14-21 Tag (e)
| WMS02P15TS |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -1.5A; Idm: -6A; 3.1W; SOP8
Mounting: SMD
Pulsed drain current: -6A
Power dissipation: 3.1W
Gate charge: 9.6nC
Polarisation: unipolar
Drain current: -1.5A
Kind of channel: enhancement
Drain-source voltage: -150V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOP8
On-state resistance: 0.85Ω
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -150V; -1.5A; Idm: -6A; 3.1W; SOP8
Mounting: SMD
Pulsed drain current: -6A
Power dissipation: 3.1W
Gate charge: 9.6nC
Polarisation: unipolar
Drain current: -1.5A
Kind of channel: enhancement
Drain-source voltage: -150V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOP8
On-state resistance: 0.85Ω
auf Bestellung 495 Stücke:
Lieferzeit 14-21 Tag (e)
| WMS032N04LG2 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 18A; Idm: 165A; 22W; SOP8
Pulsed drain current: 165A
Power dissipation: 22W
Gate charge: 22.5nC
Polarisation: unipolar
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOP8
On-state resistance: 5.2mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 18A; Idm: 165A; 22W; SOP8
Pulsed drain current: 165A
Power dissipation: 22W
Gate charge: 22.5nC
Polarisation: unipolar
Drain current: 18A
Kind of channel: enhancement
Drain-source voltage: 40V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOP8
On-state resistance: 5.2mΩ
Mounting: SMD
auf Bestellung 90 Stücke:
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| WMS048NV6LG4 |
|
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 18.5A; Idm: 74A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 18.5A
Pulsed drain current: 74A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 18.5A; Idm: 74A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 18.5A
Pulsed drain current: 74A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 88 Stücke:
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| WMS04N10T1 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 16A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 16A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| WMS04N10TS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| WMS04P06TS |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.8A; SOP8
Mounting: SMD
Case: SOP8
Polarisation: unipolar
Drain current: -3.8A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 0.105Ω
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.8A; SOP8
Mounting: SMD
Case: SOP8
Polarisation: unipolar
Drain current: -3.8A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
On-state resistance: 0.105Ω
auf Bestellung 990 Stücke:
Lieferzeit 14-21 Tag (e)
| WMS06N10TS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.8A; Idm: 23A; 3.1W; SOP8
Mounting: SMD
Gate charge: 37.9nC
Polarisation: unipolar
Drain current: 5.8A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOP8
On-state resistance: 45mΩ
Pulsed drain current: 23A
Power dissipation: 3.1W
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5.8A; Idm: 23A; 3.1W; SOP8
Mounting: SMD
Gate charge: 37.9nC
Polarisation: unipolar
Drain current: 5.8A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOP8
On-state resistance: 45mΩ
Pulsed drain current: 23A
Power dissipation: 3.1W
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
| WMS080N10LG2 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 260A; 3W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 260A
Gate charge: 15.7nC
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 260A; 3W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: 260A
Gate charge: 15.7nC
Kind of package: reel; tape
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
| WMS08DH04T1 |
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 40/-40V; 7.5/-5.5A; 2.2W; SOP8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Power dissipation: 2.2W
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
Drain current: 7.5/-5.5A
On-state resistance: 24/47mΩ
Gate charge: 26/20nC
Gate-source voltage: ±20V
Drain-source voltage: 40/-40V
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 40/-40V; 7.5/-5.5A; 2.2W; SOP8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Power dissipation: 2.2W
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
Drain current: 7.5/-5.5A
On-state resistance: 24/47mΩ
Gate charge: 26/20nC
Gate-source voltage: ±20V
Drain-source voltage: 40/-40V
Kind of channel: enhancement
auf Bestellung 488 Stücke:
Lieferzeit 14-21 Tag (e)
| WMS08N06TS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 32A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 32A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 788 Stücke:
Lieferzeit 14-21 Tag (e)
| WMS090N04LG2 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| WMS090NV6LG4 |
|
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 14.5A; Idm: 58A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 14.5A
Pulsed drain current: 58A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 21.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 14.5A; Idm: 58A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 14.5A
Pulsed drain current: 58A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: SMD
Gate charge: 21.7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 323 Stücke:
Lieferzeit 14-21 Tag (e)
| WMS09P02TS |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -9A; Idm: -36A; 3W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9A
Pulsed drain current: -36A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±12V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -9A; Idm: -36A; 3W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9A
Pulsed drain current: -36A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±12V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 498 Stücke:
Lieferzeit 14-21 Tag (e)
| WMS10DH04TS |
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 40/-40V; 10/-8A; 3W; SOP8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Power dissipation: 3W
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
Drain current: 10/-8A
On-state resistance: 16/33mΩ
Gate charge: 26/30nC
Gate-source voltage: ±20V
Drain-source voltage: 40/-40V
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 40/-40V; 10/-8A; 3W; SOP8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Power dissipation: 3W
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
Drain current: 10/-8A
On-state resistance: 16/33mΩ
Gate charge: 26/30nC
Gate-source voltage: ±20V
Drain-source voltage: 40/-40V
Kind of channel: enhancement
auf Bestellung 359 Stücke:
Lieferzeit 14-21 Tag (e)
| WMS10DN04TS |
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 10A; Idm: 40A; 3W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 10A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 15.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 25.8nC
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 10A; Idm: 40A; 3W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 10A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 15.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 25.8nC
auf Bestellung 449 Stücke:
Lieferzeit 14-21 Tag (e)
| WMS10N04TS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10A; Idm: 40A; 3W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 12.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 22.2nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 10A; Idm: 40A; 3W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 10A
Pulsed drain current: 40A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 12.5mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 22.2nC
auf Bestellung 426 Stücke:
Lieferzeit 14-21 Tag (e)
| WMS11P02TS |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -11A; Idm: -44A; 3W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -11A
Pulsed drain current: -44A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±12V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -11A; Idm: -44A; 3W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -11A
Pulsed drain current: -44A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±12V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| WMS140DNV6LG4 |
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 65V; 10A; Idm: 40A; 3.1W; SOP8
Mounting: SMD
Pulsed drain current: 40A
Power dissipation: 3.1W
Gate charge: 14nC
Polarisation: unipolar
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 65V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOP8
On-state resistance: 18mΩ
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 65V; 10A; Idm: 40A; 3.1W; SOP8
Mounting: SMD
Pulsed drain current: 40A
Power dissipation: 3.1W
Gate charge: 14nC
Polarisation: unipolar
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 65V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOP8
On-state resistance: 18mΩ
auf Bestellung 472 Stücke:
Lieferzeit 14-21 Tag (e)
| WMS140NV6LG4 |
|
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 11.5A; Idm: 46A; 3.1W; SOP8
Mounting: SMD
Pulsed drain current: 46A
Power dissipation: 3.1W
Gate charge: 14nC
Polarisation: unipolar
Drain current: 11.5A
Kind of channel: enhancement
Drain-source voltage: 65V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOP8
On-state resistance: 15mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 11.5A; Idm: 46A; 3.1W; SOP8
Mounting: SMD
Pulsed drain current: 46A
Power dissipation: 3.1W
Gate charge: 14nC
Polarisation: unipolar
Drain current: 11.5A
Kind of channel: enhancement
Drain-source voltage: 65V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOP8
On-state resistance: 15mΩ
auf Bestellung 500 Stücke:
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| WMS15N03T1 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 15A; Idm: 60A; 3W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 15A; Idm: 60A; 3W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 440 Stücke:
Lieferzeit 14-21 Tag (e)
| WMS15P02T1 |
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -15A; Idm: -60A; 3.1W; SOP8
Case: SOP8
Power dissipation: 3.1W
Gate charge: 43nC
Polarisation: unipolar
Drain current: -15A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±10V
Kind of package: reel; tape
On-state resistance: 8.2mΩ
Mounting: SMD
Pulsed drain current: -60A
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -15A; Idm: -60A; 3.1W; SOP8
Case: SOP8
Power dissipation: 3.1W
Gate charge: 43nC
Polarisation: unipolar
Drain current: -15A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±10V
Kind of package: reel; tape
On-state resistance: 8.2mΩ
Mounting: SMD
Pulsed drain current: -60A
auf Bestellung 476 Stücke:
Lieferzeit 14-21 Tag (e)
| WMS175DN10LG4 |
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 8.5A; Idm: 34A; 3.1W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.5A
Pulsed drain current: 34A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 22.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 8.5A; Idm: 34A; 3.1W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.5A
Pulsed drain current: 34A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 22.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 15 Stücke:
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| WMS175N10HG4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9A; Idm: 36A; 3.1W; SOP8
Mounting: SMD
Polarisation: unipolar
Drain current: 9A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOP8
On-state resistance: 18mΩ
Pulsed drain current: 36A
Power dissipation: 3.1W
Gate charge: 17nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9A; Idm: 36A; 3.1W; SOP8
Mounting: SMD
Polarisation: unipolar
Drain current: 9A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOP8
On-state resistance: 18mΩ
Pulsed drain current: 36A
Power dissipation: 3.1W
Gate charge: 17nC
auf Bestellung 455 Stücke:
Lieferzeit 14-21 Tag (e)
| WMS175N10LG4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.5A; Idm: 38A; 3.1W; SOP8
Mounting: SMD
Polarisation: unipolar
Drain current: 9.5A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOP8
On-state resistance: 17.5mΩ
Pulsed drain current: 38A
Power dissipation: 3.1W
Gate charge: 22.5nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.5A; Idm: 38A; 3.1W; SOP8
Mounting: SMD
Polarisation: unipolar
Drain current: 9.5A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOP8
On-state resistance: 17.5mΩ
Pulsed drain current: 38A
Power dissipation: 3.1W
Gate charge: 22.5nC
auf Bestellung 475 Stücke:
Lieferzeit 14-21 Tag (e)
| WMS240N10LG2 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 32A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 32A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 24mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
| WMT04N10TS |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
| WMT05N10T1 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 20A; 4.2W; SOT223
Mounting: SMD
Polarisation: unipolar
Drain current: 5A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT223
On-state resistance: 0.1Ω
Pulsed drain current: 20A
Power dissipation: 4.2W
Gate charge: 20.6nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 20A; 4.2W; SOT223
Mounting: SMD
Polarisation: unipolar
Drain current: 5A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT223
On-state resistance: 0.1Ω
Pulsed drain current: 20A
Power dissipation: 4.2W
Gate charge: 20.6nC
auf Bestellung 238 Stücke:
Lieferzeit 14-21 Tag (e)
| WMT4N65D1B |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 2.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 2.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| WMU080N10HG2 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 168A; 28.4W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Power dissipation: 28.4W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 168A
Gate charge: 25.4nC
Kind of package: tube
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 168A; 28.4W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Power dissipation: 28.4W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: THT
Kind of channel: enhancement
Pulsed drain current: 168A
Gate charge: 25.4nC
Kind of package: tube
auf Bestellung 65 Stücke:
Lieferzeit 14-21 Tag (e)
| WMX3N150D1 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 90W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 3A
Power dissipation: 90W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 5.7Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 12A
Gate charge: 40nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 90W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 3A
Power dissipation: 90W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 5.7Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 12A
Gate charge: 40nC
auf Bestellung 336 Stücke:
Lieferzeit 14-21 Tag (e)
| WMX4N150D1 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 4A; Idm: 16A; 90W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Power dissipation: 90W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 5.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 16A
Gate charge: 41nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 4A; Idm: 16A; 90W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Power dissipation: 90W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 5.4Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 16A
Gate charge: 41nC
auf Bestellung 62 Stücke:
Lieferzeit 14-21 Tag (e)
| WMZ13N65EM |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 6.5A; Idm: 35A; 85W
Mounting: SMD
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: DFN8x8
On-state resistance: 390mΩ
Pulsed drain current: 35A
Power dissipation: 85W
Gate charge: 20.3nC
Polarisation: unipolar
Technology: WMOS™ EM
Drain current: 6.5A
Kind of channel: enhancement
Drain-source voltage: 650V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ EM; unipolar; 650V; 6.5A; Idm: 35A; 85W
Mounting: SMD
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: DFN8x8
On-state resistance: 390mΩ
Pulsed drain current: 35A
Power dissipation: 85W
Gate charge: 20.3nC
Polarisation: unipolar
Technology: WMOS™ EM
Drain current: 6.5A
Kind of channel: enhancement
Drain-source voltage: 650V
Produkt ist nicht verfügbar
Im Einkaufswagen
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| WMZ26N60C4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Power dissipation: 135W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 0.205Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 22.1nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Power dissipation: 135W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 0.205Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 40A
Gate charge: 22.1nC
Produkt ist nicht verfügbar
Im Einkaufswagen
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| WMZ26N65C4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
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| WMZ36N65C4 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 20A; Idm: 100A; 277W
Mounting: SMD
Pulsed drain current: 100A
Power dissipation: 277W
Gate charge: 16nC
Polarisation: unipolar
Technology: WMOS™ C4
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: DFN8x8
On-state resistance: 97mΩ
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 20A; Idm: 100A; 277W
Mounting: SMD
Pulsed drain current: 100A
Power dissipation: 277W
Gate charge: 16nC
Polarisation: unipolar
Technology: WMOS™ C4
Drain current: 20A
Kind of channel: enhancement
Drain-source voltage: 650V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: DFN8x8
On-state resistance: 97mΩ
Produkt ist nicht verfügbar
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| WMZ53N60F2 |
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 26A; Idm: 90A; 280W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 280W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 90A
Gate charge: 58nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 26A; Idm: 90A; 280W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 280W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 90A
Gate charge: 58nC
Produkt ist nicht verfügbar
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| WS05-4RUL SOT23-6 |
Hersteller: WAYON
Transient Voltage Suppressor; protects 4 I/O lines; 400W; 20A; 5V; -55°C~125°C; Odpowiednik: WWS05-4RUL; WS05-4RUL UIWS05-4rul
Anzahl je Verpackung: 100 Stücke
Transient Voltage Suppressor; protects 4 I/O lines; 400W; 20A; 5V; -55°C~125°C; Odpowiednik: WWS05-4RUL; WS05-4RUL UIWS05-4rul
Anzahl je Verpackung: 100 Stücke
auf Bestellung 45 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 100+ | 0.61 EUR |
| WS05-4RUL SOT23-6 |
Hersteller: WAYON
Transient Voltage Suppressor; protects 4 I/O lines; 400W; 20A; 5V; -55°C~125°C; Odpowiednik: WWS05-4RUL; WS05-4RUL UIWS05-4rul
Anzahl je Verpackung: 100 Stücke
Transient Voltage Suppressor; protects 4 I/O lines; 400W; 20A; 5V; -55°C~125°C; Odpowiednik: WWS05-4RUL; WS05-4RUL UIWS05-4rul
Anzahl je Verpackung: 100 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 100+ | 0.61 EUR |
| WSRSIC002120NPO |
Hersteller: WAYON
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 2A; tape
Mounting: SMD
Max. forward impulse current: 18A
Max. forward voltage: 1.36V
Technology: SiC
Max. off-state voltage: 1.2kV
Load current: 2A
Kind of package: tape
Semiconductor structure: single diode
Leakage current: 1µA
Case: DPAK
Type of diode: Schottky rectifying
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 2A; tape
Mounting: SMD
Max. forward impulse current: 18A
Max. forward voltage: 1.36V
Technology: SiC
Max. off-state voltage: 1.2kV
Load current: 2A
Kind of package: tape
Semiconductor structure: single diode
Leakage current: 1µA
Case: DPAK
Type of diode: Schottky rectifying
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