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WMQ80N03T1 WMQ80N03T1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 320A; 44.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 44.6W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2965 Stücke:
Lieferzeit 14-21 Tag (e)
132+0.54 EUR
227+0.32 EUR
275+0.26 EUR
296+0.24 EUR
311+0.23 EUR
500+0.22 EUR
Mindestbestellmenge: 132
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WMR050N03LG4 WMR050N03LG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 68A; 2.4W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 17A
Pulsed drain current: 68A
Power dissipation: 2.4W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 328 Stücke:
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122+0.59 EUR
278+0.26 EUR
328+0.21 EUR
Mindestbestellmenge: 122
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WMR05N10TS WMR05N10TS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 24A; 15W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5A
Pulsed drain current: 24A
Power dissipation: 15W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 0.26Ω
Mounting: SMD
Gate charge: 9.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
313+0.23 EUR
725+0.099 EUR
893+0.08 EUR
995+0.072 EUR
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WMR07N03T1 WMR07N03T1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; Idm: 35A; 1.6W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Pulsed drain current: 35A
Power dissipation: 1.6W
Case: DFN2020-6
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
132+0.54 EUR
348+0.21 EUR
496+0.14 EUR
550+0.13 EUR
705+0.1 EUR
747+0.096 EUR
Mindestbestellmenge: 132
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WMR07N06TS WMR07N06TS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; Idm: 28A; 2.7W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 2.7W
Case: DFN2020-6
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.4 EUR
360+0.2 EUR
455+0.16 EUR
477+0.15 EUR
500+0.14 EUR
Mindestbestellmenge: 179
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WMR07P03TS WMR07P03TS WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -28A; 1.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 1.8W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
112+0.64 EUR
319+0.22 EUR
397+0.18 EUR
421+0.17 EUR
500+0.14 EUR
Mindestbestellmenge: 112
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WMR10N03T1 WMR10N03T1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 40A; 26.6W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 40A
Power dissipation: 26.6W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 9.9nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
117+0.61 EUR
296+0.24 EUR
353+0.2 EUR
371+0.19 EUR
477+0.15 EUR
500+0.14 EUR
Mindestbestellmenge: 117
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WMR13N03T1 WMR13N03T1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 50A; 2.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12.5A
Pulsed drain current: 50A
Power dissipation: 2.1W
Case: DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 485 Stücke:
Lieferzeit 14-21 Tag (e)
107+0.67 EUR
266+0.27 EUR
319+0.22 EUR
424+0.17 EUR
447+0.16 EUR
Mindestbestellmenge: 107
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WMR140NV6LG4 WMR140NV6LG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 9A; Idm: 36A; 2.1W; DFN2020-6
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 9A
Gate charge: 14nC
On-state resistance: 14.5mΩ
Power dissipation: 2.1W
Gate-source voltage: ±20V
Pulsed drain current: 36A
Case: DFN2020-6
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
139+0.51 EUR
343+0.21 EUR
410+0.17 EUR
435+0.16 EUR
500+0.14 EUR
Mindestbestellmenge: 139
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WMS048NV6HG4 WMS048NV6HG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 18.5A; Idm: 74A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 18.5A
Pulsed drain current: 74A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 28.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
74+0.97 EUR
100+0.72 EUR
Mindestbestellmenge: 74
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WMS048NV6LG4 WMS048NV6LG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 18.5A; Idm: 74A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 18.5A
Pulsed drain current: 74A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
74+0.97 EUR
100+0.72 EUR
Mindestbestellmenge: 74
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WMS04N10T1 WMS04N10T1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 16A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
112+0.64 EUR
315+0.23 EUR
394+0.18 EUR
417+0.17 EUR
496+0.14 EUR
Mindestbestellmenge: 112
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WMS04N10TS WMS04N10TS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
136+0.53 EUR
363+0.2 EUR
521+0.14 EUR
582+0.12 EUR
695+0.1 EUR
736+0.097 EUR
Mindestbestellmenge: 136
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WMS04P06TS WMS04P06TS WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.8A; SOP8
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -60V
Gate-source voltage: ±20V
Drain current: -3.8A
On-state resistance: 0.105Ω
Kind of channel: enhancement
Type of transistor: P-MOSFET
auf Bestellung 990 Stücke:
Lieferzeit 14-21 Tag (e)
120+0.6 EUR
319+0.22 EUR
455+0.16 EUR
506+0.14 EUR
642+0.11 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
WMS04P10TS WMS04P10TS WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -3.5A; Idm: -14A; 3.1W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -3.5A
Pulsed drain current: -14A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
107+0.67 EUR
246+0.29 EUR
295+0.24 EUR
374+0.19 EUR
394+0.18 EUR
Mindestbestellmenge: 107
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WMS05P06T1 WMS05P06T1 WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.5A; Idm: -18A; 3.1W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.5A
Pulsed drain current: -18A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 489 Stücke:
Lieferzeit 14-21 Tag (e)
109+0.66 EUR
275+0.26 EUR
329+0.22 EUR
345+0.21 EUR
439+0.16 EUR
463+0.15 EUR
Mindestbestellmenge: 109
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WMS080N10LG2 WMS080N10LG2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 260A; 3W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 260A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 15.7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
85+0.84 EUR
100+0.72 EUR
Mindestbestellmenge: 85
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WMS08DH04T1 WMS08DH04T1 WAYON Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 40/-40V; 7.5/-5.5A; 2.2W; SOP8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Power dissipation: 2.2W
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 24/47mΩ
Drain current: 7.5/-5.5A
Gate charge: 26/20nC
Gate-source voltage: ±20V
Drain-source voltage: 40/-40V
Kind of channel: enhancement
auf Bestellung 498 Stücke:
Lieferzeit 14-21 Tag (e)
129+0.56 EUR
265+0.27 EUR
317+0.23 EUR
424+0.17 EUR
447+0.16 EUR
Mindestbestellmenge: 129
Im Einkaufswagen  Stück im Wert von  UAH
WMS08N06TS WMS08N06TS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 32A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
107+0.67 EUR
302+0.24 EUR
376+0.19 EUR
397+0.18 EUR
511+0.14 EUR
538+0.13 EUR
Mindestbestellmenge: 107
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WMS08P03T1 WMS08P03T1 WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8A; Idm: -40A; 2.7W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Pulsed drain current: -40A
Power dissipation: 2.7W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.57 EUR
332+0.22 EUR
472+0.15 EUR
527+0.14 EUR
625+0.11 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
WMS090DNV6LG4 WMS090DNV6LG4 WAYON Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 65V; 12.5A; Idm: 50A; 3.1W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 12.5A
Pulsed drain current: 50A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
112+0.64 EUR
185+0.39 EUR
205+0.35 EUR
246+0.29 EUR
260+0.28 EUR
Mindestbestellmenge: 112
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WMS090N04LG2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMS09N06TS WMS09N06TS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 36A; 3.1W; SOP8
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: SOP8
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9A
Gate charge: 14.5nC
On-state resistance: 22mΩ
Power dissipation: 3.1W
Gate-source voltage: ±20V
Pulsed drain current: 36A
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
107+0.67 EUR
265+0.27 EUR
319+0.22 EUR
397+0.18 EUR
421+0.17 EUR
Mindestbestellmenge: 107
Im Einkaufswagen  Stück im Wert von  UAH
WMS09P02TS WMS09P02TS WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -9A; Idm: -36A; 3W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9A
Pulsed drain current: -36A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±12V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 498 Stücke:
Lieferzeit 14-21 Tag (e)
112+0.64 EUR
313+0.23 EUR
394+0.18 EUR
414+0.17 EUR
498+0.14 EUR
Mindestbestellmenge: 112
Im Einkaufswagen  Stück im Wert von  UAH
WMS09P06TS WMS09P06TS WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8.5A; Idm: -34A; 3.1W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -8.5A
Pulsed drain current: -34A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 394 Stücke:
Lieferzeit 14-21 Tag (e)
129+0.56 EUR
211+0.34 EUR
234+0.31 EUR
300+0.24 EUR
317+0.23 EUR
Mindestbestellmenge: 129
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WMS10DH04TS WMS10DH04TS WAYON Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 40/-40V; 10/-8A; 3W; SOP8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Power dissipation: 3W
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 16/33mΩ
Drain current: 10/-8A
Gate charge: 26/30nC
Gate-source voltage: ±20V
Drain-source voltage: 40/-40V
Kind of channel: enhancement
auf Bestellung 425 Stücke:
Lieferzeit 14-21 Tag (e)
129+0.56 EUR
265+0.27 EUR
317+0.23 EUR
424+0.17 EUR
Mindestbestellmenge: 129
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WMS11P02TS WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -11A; Idm: -44A; 3W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -11A
Pulsed drain current: -44A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±12V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMS12P03T1 WMS12P03T1 WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11.5A; Idm: -45.8A; 3W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11.5A
Pulsed drain current: -45.8A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 487 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.57 EUR
281+0.25 EUR
338+0.21 EUR
358+0.2 EUR
451+0.16 EUR
477+0.15 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
WMS140NV6LG4 WMS140NV6LG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 11.5A; Idm: 46A; 3.1W; SOP8
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 11.5A
Gate charge: 14nC
On-state resistance: 15mΩ
Power dissipation: 3.1W
Gate-source voltage: ±20V
Pulsed drain current: 46A
Case: SOP8
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
103+0.7 EUR
254+0.28 EUR
305+0.23 EUR
407+0.18 EUR
432+0.17 EUR
Mindestbestellmenge: 103
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WMS14DN03T1 WMS14DN03T1 WAYON Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 14A; Idm: 56A; 3W; SOP8
Polarisation: unipolar
Case: SOP8
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Pulsed drain current: 56A
Drain current: 14A
Drain-source voltage: 30V
Gate charge: 9.5nC
On-state resistance: 10.5mΩ
Power dissipation: 3W
Gate-source voltage: ±20V
Kind of package: reel; tape
auf Bestellung 480 Stücke:
Lieferzeit 14-21 Tag (e)
97+0.74 EUR
200+0.36 EUR
240+0.3 EUR
323+0.22 EUR
341+0.21 EUR
Mindestbestellmenge: 97
Im Einkaufswagen  Stück im Wert von  UAH
WMS15N03T1 WMS15N03T1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 15A; Idm: 60A; 3W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 487 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.57 EUR
220+0.33 EUR
268+0.27 EUR
341+0.21 EUR
360+0.2 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
WMS15P02T1 WMS15P02T1 WAYON Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -15A; Idm: -60A; 3.1W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -15A
Pulsed drain current: -60A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±10V
On-state resistance: 8.2mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
120+0.6 EUR
271+0.26 EUR
325+0.22 EUR
345+0.21 EUR
432+0.17 EUR
459+0.16 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
WMS175DN10LG4 WMS175DN10LG4 WAYON Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 8.5A; Idm: 34A; 3.1W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.5A
Pulsed drain current: 34A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 22.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
81+0.89 EUR
100+0.72 EUR
Mindestbestellmenge: 81
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WMS175N10HG4 WMS175N10HG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9A; Idm: 36A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 291 Stücke:
Lieferzeit 14-21 Tag (e)
117+0.61 EUR
202+0.35 EUR
247+0.29 EUR
291+0.24 EUR
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WMS175N10LG4 WMS175N10LG4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.5A; Idm: 38A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.5A
Pulsed drain current: 38A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 22.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
120+0.6 EUR
198+0.36 EUR
220+0.33 EUR
281+0.25 EUR
298+0.24 EUR
Mindestbestellmenge: 120
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WMS240N10LG2 WMS240N10LG2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 32A; 3.1W; SOP8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 20nC
On-state resistance: 24mΩ
Power dissipation: 3.1W
Drain current: 8A
Gate-source voltage: ±20V
Pulsed drain current: 32A
Drain-source voltage: 100V
Case: SOP8
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.57 EUR
220+0.33 EUR
268+0.27 EUR
341+0.21 EUR
360+0.2 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
WMT05N10T1 WMT05N10T1 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 20A; 4.2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 4.2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 20.6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 400 Stücke:
Lieferzeit 14-21 Tag (e)
95+0.76 EUR
227+0.32 EUR
298+0.24 EUR
382+0.19 EUR
400+0.17 EUR
Mindestbestellmenge: 95
Im Einkaufswagen  Stück im Wert von  UAH
WMT05N12TS WMT05N12TS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 4.6A; Idm: 18.4A; 3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 4.6A
Pulsed drain current: 18.4A
Power dissipation: 3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 495 Stücke:
Lieferzeit 14-21 Tag (e)
117+0.61 EUR
222+0.32 EUR
246+0.29 EUR
315+0.23 EUR
334+0.21 EUR
Mindestbestellmenge: 117
Im Einkaufswagen  Stück im Wert von  UAH
WMT07N06TS WMT07N06TS WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; Idm: 28A; 2.7W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 2.7W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 406 Stücke:
Lieferzeit 14-21 Tag (e)
112+0.64 EUR
268+0.27 EUR
350+0.2 EUR
406+0.17 EUR
Mindestbestellmenge: 112
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WMT4N65D1B WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 2.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMU080N10HG2 WMU080N10HG2 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 168A; 28.4W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Pulsed drain current: 168A
Power dissipation: 28.4W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: THT
Gate charge: 25.4nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
69+1.04 EUR
80+0.9 EUR
95+0.76 EUR
Mindestbestellmenge: 69
Im Einkaufswagen  Stück im Wert von  UAH
WMX3N150D1 WMX3N150D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 90W
Case: TO3PF
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 40nC
On-state resistance: 5.7Ω
Drain current: 3A
Pulsed drain current: 12A
Gate-source voltage: ±30V
Power dissipation: 90W
Drain-source voltage: 1.5kV
Kind of channel: enhancement
Technology: WMOS™ D1
auf Bestellung 379 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.79 EUR
45+1.62 EUR
58+1.24 EUR
61+1.19 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
WMX4N150D1 WMX4N150D1 WAYON Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 4A; Idm: 16A; 90W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 90W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 5.4Ω
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 228 Stücke:
Lieferzeit 14-21 Tag (e)
44+1.66 EUR
48+1.5 EUR
57+1.27 EUR
60+1.2 EUR
120+1.19 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
WMZ26N60C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 0.205Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMZ26N65C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMZ36N65C4 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMZ53N60F2 WAYON Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 26A; Idm: 90A; 280W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 280W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WS05-4RUL WAYON Transient Voltage Suppressor; protects 4 I/O lines; 400W; 20A; 5V; -55°C~125°C; Odpowiednik: WWS05-4RUL; WS05-4RUL SOT23-6 UIWS05-4rul
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
40+0.86 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC004065NPF WSRSIC004065NPF WAYON Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; Ir: 0.8uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.38V
Max. forward impulse current: 30A
Leakage current: 0.8µA
Kind of package: tube
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)
48+1.5 EUR
53+1.36 EUR
67+1.07 EUR
71+1.02 EUR
Mindestbestellmenge: 48
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC005120NNI WSRSIC005120NNI WAYON Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220ACIns; Ir: 1uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: TO220ACIns
Max. forward voltage: 1.4V
Max. forward impulse current: 43A
Leakage current: 1µA
Kind of package: tube
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
10+7.15 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC005120NPO WAYON Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 5A; tape
Type of diode: Schottky rectifying
Case: DPAK
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 1.38V
Leakage current: 2µA
Max. forward impulse current: 43A
Kind of package: tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC008065NNI WSRSIC008065NNI WAYON Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ACIns; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ACIns
Max. forward voltage: 1.38V
Max. forward impulse current: 50A
Leakage current: 1.2µA
Kind of package: tube
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
30+2.42 EUR
43+1.7 EUR
45+1.62 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC008065NPC WSRSIC008065NPC WAYON Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ir: 1.2uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.38V
Max. forward impulse current: 65A
Leakage current: 1.2µA
Kind of package: tube
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
32+2.23 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC008065NPD WAYON Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SiC; SMD; 650V; 8A; tape
Type of diode: Schottky rectifying
Case: DFN5x6
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 1.38V
Leakage current: 1.2µA
Max. forward impulse current: 45A
Kind of package: tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC008065NPF WSRSIC008065NPF WAYON Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220FP-2; Ir: 1.2uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.38V
Max. forward impulse current: 50A
Leakage current: 1.2µA
Kind of package: tube
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
12+5.96 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC010120NP4 WSRSIC010120NP4 WAYON Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; Ir: 5uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.4V
Max. forward impulse current: 95A
Leakage current: 5µA
Kind of package: tube
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.88 EUR
25+2.86 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC030120NP4 WSRSIC030120NP4 WAYON Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; TO247-2; Ir: 13uA
Case: TO247-2
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 13µA
Max. forward voltage: 1.4V
Load current: 30A
Max. forward impulse current: 220A
Max. off-state voltage: 1.2kV
Kind of package: tube
Semiconductor structure: single diode
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
7+10.24 EUR
10+7.36 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC030120NP8 WSRSIC030120NP8 WAYON Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; Ir: 8uA
Case: TO247-3
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 8µA
Max. forward voltage: 1.43V
Load current: 15A x2
Max. forward impulse current: 270A
Max. off-state voltage: 1.2kV
Kind of package: tube
Semiconductor structure: common cathode; double
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
7+11.81 EUR
9+8.28 EUR
10+7.84 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC060120NP4 WSRSIC060120NP4 WAYON Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 60A; TO247-2; Ir: 25uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.4V
Max. forward impulse current: 340A
Leakage current: 25µA
Kind of package: tube
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
5+15.87 EUR
7+10.72 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
Транзистор WMK20N65C2 WAYON Транзистор польовий TO220-3 MOSFET n-ch Vds=650V, Id=15A, Rds=0,300 Ohm, Pd=86W
auf Bestellung 82 Stücke:
Lieferzeit 14-21 Tag (e)
1+9.52 EUR
10+8.16 EUR
100+6.8 EUR
Im Einkaufswagen  Stück im Wert von  UAH
WMQ80N03T1
WMQ80N03T1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 320A; 44.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 44.6W
Case: PDFN3030-8
Gate-source voltage: ±20V
On-state resistance: 3.4mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2965 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
132+0.54 EUR
227+0.32 EUR
275+0.26 EUR
296+0.24 EUR
311+0.23 EUR
500+0.22 EUR
Mindestbestellmenge: 132
Im Einkaufswagen  Stück im Wert von  UAH
WMR050N03LG4
WMR050N03LG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 17A; Idm: 68A; 2.4W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 17A
Pulsed drain current: 68A
Power dissipation: 2.4W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 5.4mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 328 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
122+0.59 EUR
278+0.26 EUR
328+0.21 EUR
Mindestbestellmenge: 122
Im Einkaufswagen  Stück im Wert von  UAH
WMR05N10TS
WMR05N10TS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 24A; 15W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5A
Pulsed drain current: 24A
Power dissipation: 15W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 0.26Ω
Mounting: SMD
Gate charge: 9.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
313+0.23 EUR
725+0.099 EUR
893+0.08 EUR
995+0.072 EUR
Mindestbestellmenge: 313
Im Einkaufswagen  Stück im Wert von  UAH
WMR07N03T1
WMR07N03T1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 7A; Idm: 35A; 1.6W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 7A
Pulsed drain current: 35A
Power dissipation: 1.6W
Case: DFN2020-6
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
132+0.54 EUR
348+0.21 EUR
496+0.14 EUR
550+0.13 EUR
705+0.1 EUR
747+0.096 EUR
Mindestbestellmenge: 132
Im Einkaufswagen  Stück im Wert von  UAH
WMR07N06TS
WMR07N06TS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; Idm: 28A; 2.7W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 2.7W
Case: DFN2020-6
On-state resistance: 33mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
360+0.2 EUR
455+0.16 EUR
477+0.15 EUR
500+0.14 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
WMR07P03TS
WMR07P03TS
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -7A; Idm: -28A; 1.8W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -7A
Pulsed drain current: -28A
Power dissipation: 1.8W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
112+0.64 EUR
319+0.22 EUR
397+0.18 EUR
421+0.17 EUR
500+0.14 EUR
Mindestbestellmenge: 112
Im Einkaufswagen  Stück im Wert von  UAH
WMR10N03T1
WMR10N03T1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 8A; Idm: 40A; 26.6W; DFN2020-6
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 8A
Pulsed drain current: 40A
Power dissipation: 26.6W
Case: DFN2020-6
Gate-source voltage: ±20V
On-state resistance: 16.5mΩ
Mounting: SMD
Gate charge: 9.9nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
117+0.61 EUR
296+0.24 EUR
353+0.2 EUR
371+0.19 EUR
477+0.15 EUR
500+0.14 EUR
Mindestbestellmenge: 117
Im Einkaufswagen  Stück im Wert von  UAH
WMR13N03T1
WMR13N03T1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 12.5A; Idm: 50A; 2.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 12.5A
Pulsed drain current: 50A
Power dissipation: 2.1W
Case: DFN2020-6
Gate-source voltage: ±12V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 10nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 485 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
107+0.67 EUR
266+0.27 EUR
319+0.22 EUR
424+0.17 EUR
447+0.16 EUR
Mindestbestellmenge: 107
Im Einkaufswagen  Stück im Wert von  UAH
WMR140NV6LG4
WMR140NV6LG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 9A; Idm: 36A; 2.1W; DFN2020-6
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 9A
Gate charge: 14nC
On-state resistance: 14.5mΩ
Power dissipation: 2.1W
Gate-source voltage: ±20V
Pulsed drain current: 36A
Case: DFN2020-6
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
139+0.51 EUR
343+0.21 EUR
410+0.17 EUR
435+0.16 EUR
500+0.14 EUR
Mindestbestellmenge: 139
Im Einkaufswagen  Stück im Wert von  UAH
WMS048NV6HG4
WMS048NV6HG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 18.5A; Idm: 74A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 18.5A
Pulsed drain current: 74A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 5.2mΩ
Mounting: SMD
Gate charge: 28.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
74+0.97 EUR
100+0.72 EUR
Mindestbestellmenge: 74
Im Einkaufswagen  Stück im Wert von  UAH
WMS048NV6LG4
WMS048NV6LG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 18.5A; Idm: 74A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 18.5A
Pulsed drain current: 74A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 5.6mΩ
Mounting: SMD
Gate charge: 35nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
74+0.97 EUR
100+0.72 EUR
Mindestbestellmenge: 74
Im Einkaufswagen  Stück im Wert von  UAH
WMS04N10T1
WMS04N10T1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 4A; Idm: 16A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
112+0.64 EUR
315+0.23 EUR
394+0.18 EUR
417+0.17 EUR
496+0.14 EUR
Mindestbestellmenge: 112
Im Einkaufswagen  Stück im Wert von  UAH
WMS04N10TS
WMS04N10TS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 3.5A; Idm: 14A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 3.5A
Pulsed drain current: 14A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Gate charge: 4nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
363+0.2 EUR
521+0.14 EUR
582+0.12 EUR
695+0.1 EUR
736+0.097 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
WMS04P06TS
WMS04P06TS
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3.8A; SOP8
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: -60V
Gate-source voltage: ±20V
Drain current: -3.8A
On-state resistance: 0.105Ω
Kind of channel: enhancement
Type of transistor: P-MOSFET
auf Bestellung 990 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
319+0.22 EUR
455+0.16 EUR
506+0.14 EUR
642+0.11 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
WMS04P10TS
WMS04P10TS
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -3.5A; Idm: -14A; 3.1W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -3.5A
Pulsed drain current: -14A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 0.16Ω
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
107+0.67 EUR
246+0.29 EUR
295+0.24 EUR
374+0.19 EUR
394+0.18 EUR
Mindestbestellmenge: 107
Im Einkaufswagen  Stück im Wert von  UAH
WMS05P06T1
WMS05P06T1
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4.5A; Idm: -18A; 3.1W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4.5A
Pulsed drain current: -18A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 489 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
109+0.66 EUR
275+0.26 EUR
329+0.22 EUR
345+0.21 EUR
439+0.16 EUR
463+0.15 EUR
Mindestbestellmenge: 109
Im Einkaufswagen  Stück im Wert von  UAH
WMS080N10LG2
WMS080N10LG2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 260A; 3W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 10A
Pulsed drain current: 260A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 11mΩ
Mounting: SMD
Gate charge: 15.7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
85+0.84 EUR
100+0.72 EUR
Mindestbestellmenge: 85
Im Einkaufswagen  Stück im Wert von  UAH
WMS08DH04T1
WMS08DH04T1
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 40/-40V; 7.5/-5.5A; 2.2W; SOP8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Power dissipation: 2.2W
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 24/47mΩ
Drain current: 7.5/-5.5A
Gate charge: 26/20nC
Gate-source voltage: ±20V
Drain-source voltage: 40/-40V
Kind of channel: enhancement
auf Bestellung 498 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+0.56 EUR
265+0.27 EUR
317+0.23 EUR
424+0.17 EUR
447+0.16 EUR
Mindestbestellmenge: 129
Im Einkaufswagen  Stück im Wert von  UAH
WMS08N06TS
WMS08N06TS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 32A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 8A
Pulsed drain current: 32A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
107+0.67 EUR
302+0.24 EUR
376+0.19 EUR
397+0.18 EUR
511+0.14 EUR
538+0.13 EUR
Mindestbestellmenge: 107
Im Einkaufswagen  Stück im Wert von  UAH
WMS08P03T1
WMS08P03T1
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -8A; Idm: -40A; 2.7W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -8A
Pulsed drain current: -40A
Power dissipation: 2.7W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 20mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
332+0.22 EUR
472+0.15 EUR
527+0.14 EUR
625+0.11 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
WMS090DNV6LG4
WMS090DNV6LG4
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 65V; 12.5A; Idm: 50A; 3.1W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 12.5A
Pulsed drain current: 50A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 12mΩ
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
112+0.64 EUR
185+0.39 EUR
205+0.35 EUR
246+0.29 EUR
260+0.28 EUR
Mindestbestellmenge: 112
Im Einkaufswagen  Stück im Wert von  UAH
WMS090N04LG2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 15mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMS09N06TS
WMS09N06TS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 9A; Idm: 36A; 3.1W; SOP8
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Case: SOP8
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 9A
Gate charge: 14.5nC
On-state resistance: 22mΩ
Power dissipation: 3.1W
Gate-source voltage: ±20V
Pulsed drain current: 36A
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
107+0.67 EUR
265+0.27 EUR
319+0.22 EUR
397+0.18 EUR
421+0.17 EUR
Mindestbestellmenge: 107
Im Einkaufswagen  Stück im Wert von  UAH
WMS09P02TS
WMS09P02TS
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -9A; Idm: -36A; 3W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -9A
Pulsed drain current: -36A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±12V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 498 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
112+0.64 EUR
313+0.23 EUR
394+0.18 EUR
414+0.17 EUR
498+0.14 EUR
Mindestbestellmenge: 112
Im Einkaufswagen  Stück im Wert von  UAH
WMS09P06TS
WMS09P06TS
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -8.5A; Idm: -34A; 3.1W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -8.5A
Pulsed drain current: -34A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 23mΩ
Mounting: SMD
Gate charge: 59nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 394 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+0.56 EUR
211+0.34 EUR
234+0.31 EUR
300+0.24 EUR
317+0.23 EUR
Mindestbestellmenge: 129
Im Einkaufswagen  Stück im Wert von  UAH
WMS10DH04TS
WMS10DH04TS
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 40/-40V; 10/-8A; 3W; SOP8
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Power dissipation: 3W
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
On-state resistance: 16/33mΩ
Drain current: 10/-8A
Gate charge: 26/30nC
Gate-source voltage: ±20V
Drain-source voltage: 40/-40V
Kind of channel: enhancement
auf Bestellung 425 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
129+0.56 EUR
265+0.27 EUR
317+0.23 EUR
424+0.17 EUR
Mindestbestellmenge: 129
Im Einkaufswagen  Stück im Wert von  UAH
WMS11P02TS
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -11A; Idm: -44A; 3W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -11A
Pulsed drain current: -44A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±12V
On-state resistance: 13.5mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMS12P03T1
WMS12P03T1
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -11.5A; Idm: -45.8A; 3W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -11.5A
Pulsed drain current: -45.8A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 9.6mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 487 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
281+0.25 EUR
338+0.21 EUR
358+0.2 EUR
451+0.16 EUR
477+0.15 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
WMS140NV6LG4
WMS140NV6LG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 65V; 11.5A; Idm: 46A; 3.1W; SOP8
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Drain-source voltage: 65V
Drain current: 11.5A
Gate charge: 14nC
On-state resistance: 15mΩ
Power dissipation: 3.1W
Gate-source voltage: ±20V
Pulsed drain current: 46A
Case: SOP8
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
103+0.7 EUR
254+0.28 EUR
305+0.23 EUR
407+0.18 EUR
432+0.17 EUR
Mindestbestellmenge: 103
Im Einkaufswagen  Stück im Wert von  UAH
WMS14DN03T1
WMS14DN03T1
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 14A; Idm: 56A; 3W; SOP8
Polarisation: unipolar
Case: SOP8
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Pulsed drain current: 56A
Drain current: 14A
Drain-source voltage: 30V
Gate charge: 9.5nC
On-state resistance: 10.5mΩ
Power dissipation: 3W
Gate-source voltage: ±20V
Kind of package: reel; tape
auf Bestellung 480 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
97+0.74 EUR
200+0.36 EUR
240+0.3 EUR
323+0.22 EUR
341+0.21 EUR
Mindestbestellmenge: 97
Im Einkaufswagen  Stück im Wert von  UAH
WMS15N03T1
WMS15N03T1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 15A; Idm: 60A; 3W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 15A
Pulsed drain current: 60A
Power dissipation: 3W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 4mΩ
Mounting: SMD
Gate charge: 32nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 487 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
220+0.33 EUR
268+0.27 EUR
341+0.21 EUR
360+0.2 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
WMS15P02T1
WMS15P02T1
Hersteller: WAYON
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -15A; Idm: -60A; 3.1W; SOP8
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -15A
Pulsed drain current: -60A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±10V
On-state resistance: 8.2mΩ
Mounting: SMD
Gate charge: 43nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
271+0.26 EUR
325+0.22 EUR
345+0.21 EUR
432+0.17 EUR
459+0.16 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
WMS175DN10LG4
WMS175DN10LG4
Hersteller: WAYON
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 100V; 8.5A; Idm: 34A; 3.1W; SOP8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 8.5A
Pulsed drain current: 34A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 21mΩ
Mounting: SMD
Gate charge: 22.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
81+0.89 EUR
100+0.72 EUR
Mindestbestellmenge: 81
Im Einkaufswagen  Stück im Wert von  UAH
WMS175N10HG4
WMS175N10HG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9A; Idm: 36A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9A
Pulsed drain current: 36A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 18mΩ
Mounting: SMD
Gate charge: 17nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 291 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
117+0.61 EUR
202+0.35 EUR
247+0.29 EUR
291+0.24 EUR
Mindestbestellmenge: 117
Im Einkaufswagen  Stück im Wert von  UAH
WMS175N10LG4
WMS175N10LG4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 9.5A; Idm: 38A; 3.1W; SOP8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 9.5A
Pulsed drain current: 38A
Power dissipation: 3.1W
Case: SOP8
Gate-source voltage: ±20V
On-state resistance: 17.5mΩ
Mounting: SMD
Gate charge: 22.5nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
120+0.6 EUR
198+0.36 EUR
220+0.33 EUR
281+0.25 EUR
298+0.24 EUR
Mindestbestellmenge: 120
Im Einkaufswagen  Stück im Wert von  UAH
WMS240N10LG2
WMS240N10LG2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 8A; Idm: 32A; 3.1W; SOP8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 20nC
On-state resistance: 24mΩ
Power dissipation: 3.1W
Drain current: 8A
Gate-source voltage: ±20V
Pulsed drain current: 32A
Drain-source voltage: 100V
Case: SOP8
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
125+0.57 EUR
220+0.33 EUR
268+0.27 EUR
341+0.21 EUR
360+0.2 EUR
Mindestbestellmenge: 125
Im Einkaufswagen  Stück im Wert von  UAH
WMT05N10T1
WMT05N10T1
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 20A; 4.2W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 5A
Pulsed drain current: 20A
Power dissipation: 4.2W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: SMD
Gate charge: 20.6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 400 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
95+0.76 EUR
227+0.32 EUR
298+0.24 EUR
382+0.19 EUR
400+0.17 EUR
Mindestbestellmenge: 95
Im Einkaufswagen  Stück im Wert von  UAH
WMT05N12TS
WMT05N12TS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 120V; 4.6A; Idm: 18.4A; 3W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 120V
Drain current: 4.6A
Pulsed drain current: 18.4A
Power dissipation: 3W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 75mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 495 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
117+0.61 EUR
222+0.32 EUR
246+0.29 EUR
315+0.23 EUR
334+0.21 EUR
Mindestbestellmenge: 117
Im Einkaufswagen  Stück im Wert von  UAH
WMT07N06TS
WMT07N06TS
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; Idm: 28A; 2.7W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Pulsed drain current: 28A
Power dissipation: 2.7W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 406 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
112+0.64 EUR
268+0.27 EUR
350+0.2 EUR
406+0.17 EUR
Mindestbestellmenge: 112
Im Einkaufswagen  Stück im Wert von  UAH
WMT4N65D1B
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4A; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4A
Case: SOT223
Gate-source voltage: ±30V
On-state resistance: 2.55Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMU080N10HG2
WMU080N10HG2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 42A; Idm: 168A; 28.4W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 42A
Pulsed drain current: 168A
Power dissipation: 28.4W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 8.8mΩ
Mounting: THT
Gate charge: 25.4nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 95 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
69+1.04 EUR
80+0.9 EUR
95+0.76 EUR
Mindestbestellmenge: 69
Im Einkaufswagen  Stück im Wert von  UAH
WMX3N150D1
WMX3N150D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 3A; Idm: 12A; 90W
Case: TO3PF
Mounting: THT
Kind of package: tube
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 40nC
On-state resistance: 5.7Ω
Drain current: 3A
Pulsed drain current: 12A
Gate-source voltage: ±30V
Power dissipation: 90W
Drain-source voltage: 1.5kV
Kind of channel: enhancement
Technology: WMOS™ D1
auf Bestellung 379 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.79 EUR
45+1.62 EUR
58+1.24 EUR
61+1.19 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
WMX4N150D1
WMX4N150D1
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ D1; unipolar; 1.5kV; 4A; Idm: 16A; 90W
Type of transistor: N-MOSFET
Technology: WMOS™ D1
Polarisation: unipolar
Drain-source voltage: 1.5kV
Drain current: 4A
Pulsed drain current: 16A
Power dissipation: 90W
Case: TO3PF
Gate-source voltage: ±30V
On-state resistance: 5.4Ω
Mounting: THT
Gate charge: 41nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 228 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
44+1.66 EUR
48+1.5 EUR
57+1.27 EUR
60+1.2 EUR
120+1.19 EUR
Mindestbestellmenge: 44
Im Einkaufswagen  Stück im Wert von  UAH
WMZ26N60C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 600V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 0.205Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMZ26N65C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 10.5A; Idm: 40A
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 10.5A
Pulsed drain current: 40A
Power dissipation: 135W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: SMD
Gate charge: 22.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMZ36N65C4
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C4; unipolar; 650V; 20A; Idm: 100A; 277W
Type of transistor: N-MOSFET
Technology: WMOS™ C4
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Pulsed drain current: 100A
Power dissipation: 277W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 97mΩ
Mounting: SMD
Gate charge: 16nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WMZ53N60F2
Hersteller: WAYON
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; WMOS™ F2; unipolar; 600V; 26A; Idm: 90A; 280W
Type of transistor: N-MOSFET
Technology: WMOS™ F2
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Pulsed drain current: 90A
Power dissipation: 280W
Case: DFN8x8
Gate-source voltage: ±30V
On-state resistance: 78mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WS05-4RUL
Hersteller: WAYON
Transient Voltage Suppressor; protects 4 I/O lines; 400W; 20A; 5V; -55°C~125°C; Odpowiednik: WWS05-4RUL; WS05-4RUL SOT23-6 UIWS05-4rul
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
40+0.86 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC004065NPF
WSRSIC004065NPF
Hersteller: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; Ir: 0.8uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 4A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.38V
Max. forward impulse current: 30A
Leakage current: 0.8µA
Kind of package: tube
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
48+1.5 EUR
53+1.36 EUR
67+1.07 EUR
71+1.02 EUR
Mindestbestellmenge: 48
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC005120NNI
WSRSIC005120NNI
Hersteller: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 5A; TO220ACIns; Ir: 1uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Case: TO220ACIns
Max. forward voltage: 1.4V
Max. forward impulse current: 43A
Leakage current: 1µA
Kind of package: tube
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
10+7.15 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC005120NPO
Hersteller: WAYON
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK; SiC; SMD; 1.2kV; 5A; tape
Type of diode: Schottky rectifying
Case: DPAK
Technology: SiC
Mounting: SMD
Max. off-state voltage: 1.2kV
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 1.38V
Leakage current: 2µA
Max. forward impulse current: 43A
Kind of package: tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC008065NNI
WSRSIC008065NNI
Hersteller: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220ACIns; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220ACIns
Max. forward voltage: 1.38V
Max. forward impulse current: 50A
Leakage current: 1.2µA
Kind of package: tube
auf Bestellung 50 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
30+2.42 EUR
43+1.7 EUR
45+1.62 EUR
Mindestbestellmenge: 30
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC008065NPC
WSRSIC008065NPC
Hersteller: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220-2; Ir: 1.2uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220-2
Max. forward voltage: 1.38V
Max. forward impulse current: 65A
Leakage current: 1.2µA
Kind of package: tube
auf Bestellung 32 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
32+2.23 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC008065NPD
Hersteller: WAYON
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN5x6; SiC; SMD; 650V; 8A; tape
Type of diode: Schottky rectifying
Case: DFN5x6
Technology: SiC
Mounting: SMD
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Max. forward voltage: 1.38V
Leakage current: 1.2µA
Max. forward impulse current: 45A
Kind of package: tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC008065NPF
WSRSIC008065NPF
Hersteller: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 650V; 8A; TO220FP-2; Ir: 1.2uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 650V
Load current: 8A
Semiconductor structure: single diode
Case: TO220FP-2
Max. forward voltage: 1.38V
Max. forward impulse current: 50A
Leakage current: 1.2µA
Kind of package: tube
auf Bestellung 12 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+5.96 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC010120NP4
WSRSIC010120NP4
Hersteller: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 10A; TO247-2; Ir: 5uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 10A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.4V
Max. forward impulse current: 95A
Leakage current: 5µA
Kind of package: tube
auf Bestellung 25 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
19+3.88 EUR
25+2.86 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC030120NP4
WSRSIC030120NP4
Hersteller: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 30A; TO247-2; Ir: 13uA
Case: TO247-2
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 13µA
Max. forward voltage: 1.4V
Load current: 30A
Max. forward impulse current: 220A
Max. off-state voltage: 1.2kV
Kind of package: tube
Semiconductor structure: single diode
auf Bestellung 30 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+10.24 EUR
10+7.36 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC030120NP8
WSRSIC030120NP8
Hersteller: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 15Ax2; TO247-3; Ir: 8uA
Case: TO247-3
Mounting: THT
Type of diode: Schottky rectifying
Technology: SiC
Leakage current: 8µA
Max. forward voltage: 1.43V
Load current: 15A x2
Max. forward impulse current: 270A
Max. off-state voltage: 1.2kV
Kind of package: tube
Semiconductor structure: common cathode; double
auf Bestellung 28 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
7+11.81 EUR
9+8.28 EUR
10+7.84 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
WSRSIC060120NP4
WSRSIC060120NP4
Hersteller: WAYON
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 1.2kV; 60A; TO247-2; Ir: 25uA
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 1.2kV
Load current: 60A
Semiconductor structure: single diode
Case: TO247-2
Max. forward voltage: 1.4V
Max. forward impulse current: 340A
Leakage current: 25µA
Kind of package: tube
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
5+15.87 EUR
7+10.72 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
Транзистор WMK20N65C2
Hersteller: WAYON
Транзистор польовий TO220-3 MOSFET n-ch Vds=650V, Id=15A, Rds=0,300 Ohm, Pd=86W
auf Bestellung 82 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
1+9.52 EUR
10+8.16 EUR
100+6.8 EUR
Im Einkaufswagen  Stück im Wert von  UAH
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