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AZV358GTR-E1 Diodes Incorporated AZV358.pdf Description: IC OP AMP GP DUAL 8-TSSOP
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AZV358GTR-G1 Diodes Incorporated AZV358.pdf Description: IC OP AMP GP DUAL 8-TSSOP
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AZV358MMTR-E1 AZV358MMTR-E1 Diodes Incorporated AZV358.pdf Description: IC OP AMP GP DUAL 8-MSOP
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AZV358MTR-G1 AZV358MTR-G1 Diodes Incorporated AZV358.pdf Description: IC OP AMP GP DUAL 8-SOIC
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AZV393GTR-E1 AZV393GTR-E1 Diodes Incorporated AZV393.pdf Description: IC OP AMP GP DUAL 8-TSSOP
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AZV393GTR-G1 AZV393GTR-G1 Diodes Incorporated AZV393.pdf Description: IC OP AMP GP DUAL 8-TSSOP
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AZV393MMTR-E1 AZV393MMTR-E1 Diodes Incorporated AZV393.pdf Description: IC OP AMP GP DUAL 8-MSOP
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AZV393MTR-E1 AZV393MTR-E1 Diodes Incorporated AZV393.pdf Description: IC OP AMP GP DUAL 8-MSOP
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AZV832MTR-G1 AZV832MTR-G1 Diodes Incorporated AZV831_2.pdf Description: IC CMOS 2 CIRCUIT 8SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 1.6 V
Current - Output / Channel: 185 mA
Number of Circuits: 2
Supplier Device Package: 8-SOIC
Voltage - Input Offset: 500 µV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 1 MHz
Slew Rate: 0.45V/µs
Current - Supply: 70µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
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BAV5004WS-7 BAV5004WS-7 Diodes Incorporated Description: DIODE GEN PURP 350V 300MA SOD323
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1 µA @ 240 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 350 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 300mA
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
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D14V0H1U2WS-7 D14V0H1U2WS-7 Diodes Incorporated D14V0H1U2WS.pdf Description: TVS DIODE 14VWM 25VC
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D55V0M1B2WS-7 D55V0M1B2WS-7 Diodes Incorporated D55V0M1B2WS.pdf Description: TVS DIODE 55VWM 100VC SOD323
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 100V
Voltage - Breakdown (Min): 57V
Bidirectional Channels: 1
Supplier Device Package: SOD-323
Voltage - Reverse Standoff (Typ): 55V (Max)
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Capacitance @ Frequency: 14pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
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DDZ9701Q-7 DDZ9701Q-7 Diodes Incorporated ds30410.pdf Description: DIODE ZENER 14V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 50 nA @ 10.6 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-123
Voltage - Zener (Nom) (Vz): 14 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
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DMC2400UV-13 DMC2400UV-13 Diodes Incorporated DMC2400UV.pdf Description: MOSFET N/P-CH 20V SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.03A, 700mA
Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 10V
Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
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DMG3418L-13 DMG3418L-13 Diodes Incorporated DMG3418L.pdf Description: MOSFET N-CH 30V 4A SOT23
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 464.3 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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DMJ7N70SK3-13 DMJ7N70SK3-13 Diodes Incorporated DMJ7N70SK3.pdf Description: MOSFET N-CH 700V 3.9A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 2.5A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 351 pF @ 50 V
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DMN10H099SFG-13 DMN10H099SFG-13 Diodes Incorporated DMN10H099SFG.pdf Description: MOSFET N-CH 100V 4.2A PWRDI3333
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DMN2011UFDE-13 DMN2011UFDE-13 Diodes Incorporated DMN2011UFDE.pdf Description: MOSFET N-CH 20V 11.7A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 3372 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: U-DFN2020-6 (Type E)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 610mW (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Tape & Reel (TR)
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DMN2022UFDF-13 DMN2022UFDF-13 Diodes Incorporated DMN2022UFDF.pdf Description: MOSFET N-CH 20V 7.9A 6UDFN
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 907 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: U-DFN2020-6 (Type F)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 660mW (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 4.5V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta)
FET Type: N-Channel
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DMN3067LW-13 DMN3067LW-13 Diodes Incorporated DMN3067LW.pdf Description: MOSFET N-CH 30V 2.6A SOT-323
Input Capacitance (Ciss) (Max) @ Vds: 447 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-323
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
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DMN33D8LDW-13 DMN33D8LDW-13 Diodes Incorporated DMN33D8LDW.pdf Description: MOSFET 2N-CH 30V 0.25A
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DMN33D8LT-7 DMN33D8LT-7 Diodes Incorporated DMN33D8LT.pdf Description: MOSFET N-CH 30V 0.115A
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DMN65D8LDWQ-13 DMN65D8LDWQ-13 Diodes Incorporated DMN65D8LDWQ.pdf Description: MOSFET 2N-CH 60V 0.18A SOT363
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V
Rds On (Max) @ Id, Vgs: 6Ohm @ 115mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 180mA
Drain to Source Voltage (Vdss): 60V
Power - Max: 300mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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DMNH6042SSD-13 Diodes Incorporated Description: MOSFET N-CH
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DMP1012UCB9-7 DMP1012UCB9-7 Diodes Incorporated DMP1012UCB9.pdf Description: MOSFET P-CH 8V 10A U-WLB1515-9
Packaging: Tape & Reel (TR)
Package / Case: 9-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 2A, 4.5V
Power Dissipation (Max): 890mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: U-WLB1515-9
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 4 V
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DMP1022UFDF-13 DMP1022UFDF-13 Diodes Incorporated DMP1022UFDF.pdf Description: MOSFET P-CH 12V 9.5A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 2712 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 48.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Supplier Device Package: U-DFN2020-6 (Type F)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Power Dissipation (Max): 730mW (Ta)
Rds On (Max) @ Id, Vgs: 14.8mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
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DMP2006UFG-13 DMP2006UFG-13 Diodes Incorporated Description: MOSFET P-CH 20V 17.5A POWERDI
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DMP2033UVT-13 DMP2033UVT-13 Diodes Incorporated DMP2033UVT.pdf Description: MOSFET P-CH 20V 4.2A TSOT-26
Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: TSOT-26
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
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DMP213DUFA-7B DMP213DUFA-7B Diodes Incorporated DMP213DUFA.pdf Description: MOSFET P-CH 25V 145MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 145mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 200mA, 4.5V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: X2-DFN0806-3
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): -8V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 27.2 pF @ 10 V
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DMP3065LVT-13 DMP3065LVT-13 Diodes Incorporated DMP3065LVT.pdf Description: MOSFET P-CH 30V 5.1A TSOT-26
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TSOT-26
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 4.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
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DMTH6004SCTB-13 DMTH6004SCTB-13 Diodes Incorporated DMTH6004SCTB.pdf Description: MOSFET N-CH 60V 100A TO263AB
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-263
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 4.7W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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DXT13003DK-13 DXT13003DK-13 Diodes Incorporated Description: TRANS NPN 450V 1.5A TO-252-3
Power - Max: 1.6 W
Voltage - Collector Emitter Breakdown (Max): 450 V
Current - Collector (Ic) (Max): 1.5 A
Part Status: Obsolete
Supplier Device Package: TO-252-3
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 16 @ 500mA, 2V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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EAN60923001 Diodes Incorporated Description: IC REG LINEAR
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GP168MTR-G1 Diodes Incorporated Description: IC OFFLINE SWITCH
Packaging: Tape & Reel (TR)
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GPR343KTR-G1 Diodes Incorporated Description: IC REG CTLR AC/DC GEN3
Part Status: Active
Packaging: Tape & Reel (TR)
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HL3051MTR-G1 Diodes Incorporated Description: IC LED DRIVER RGLTR DIM
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LM2901AS14-13 LM2901AS14-13 Diodes Incorporated LM2901-03.pdf Description: IC COMPARATOR 4 DIFF 14SO
Current - Output (Typ): 16mA @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Voltage - Input Offset (Max): 2mV @ 5V
Current - Quiescent (Max): 2.5mA
Supplier Device Package: 14-SO
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Operating Temperature: -40°C ~ 125°C
Type: General Purpose
Number of Elements: 4
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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LM2902AS14-13 LM2902AS14-13 Diodes Incorporated LM2902-04.pdf Description: IC OPAMP GP 4 CIRCUIT 14SO
Voltage - Supply Span (Max): 36 V
Voltage - Supply Span (Min): 3 V
Current - Output / Channel: 40 mA
Number of Circuits: 4
Supplier Device Package: 14-SO
Voltage - Input Offset: 1 mV
Current - Input Bias: 20 nA
Gain Bandwidth Product: 700 kHz
Slew Rate: 0.3V/µs
Current - Supply: 700µA (x4 Channels)
Operating Temperature: -40°C ~ 125°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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LM2902AT14-13 LM2902AT14-13 Diodes Incorporated LM2902-04.pdf Description: IC OPAMP GP 4 CIRCUIT 14TSSOP
Voltage - Supply Span (Max): 36 V
Voltage - Supply Span (Min): 3 V
Current - Output / Channel: 40 mA
Number of Circuits: 4
Supplier Device Package: 14-TSSOP
Voltage - Input Offset: 1 mV
Current - Input Bias: 20 nA
Gain Bandwidth Product: 700 kHz
Slew Rate: 0.3V/µs
Current - Supply: 700µA (x4 Channels)
Operating Temperature: -40°C ~ 125°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
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LM2903S-13 LM2903S-13 Diodes Incorporated LM2901-03.pdf Description: IC COMPARATOR 2 DIFF 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 8-SO
Current - Quiescent (Max): 1.7mA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
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LX8213-33ISE-TR Diodes Incorporated Description: IC REG LDO SOT25
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MBR2045CT-LJ-01 MBR2045CT-LJ-01 Diodes Incorporated MBR%28F%292045CT-2060CT.pdf Description: DIODE ARR SCHOTT 45V 10A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10
Voltage Coupled to Current - Reverse Leakage @ Vr: 45
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Qualification: AEC-Q101
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PAM2306AYPKE PAM2306AYPKE Diodes Incorporated PAM2306.pdf Description: IC REG BUCK 1.8/3.3V UDFN303012
Packaging: Tape & Reel (TR)
Package / Case: 12-UFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 2
Function: Step-Down
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 1.5MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: U-DFN3030-12
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 1.8V, 3.3V
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PDS340Q-13 PDS340Q-13 Diodes Incorporated PDS340Q.pdf Description: DIODE SCHOTTKY 40V 3A POWERDI5
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SBR20A100CTB-13 SBR20A100CTB-13 Diodes Incorporated SBR20A100CTB.pdf Description: DIODE ARR SBR 100V 10A TO263
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-263
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Qualification: AEC-Q101
Grade: Automotive
Packaging: Tape & Reel (TR)
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SBR2U10LP-7 SBR2U10LP-7 Diodes Incorporated SBR2U10LP.pdf Description: DIODE SBR 10V 2A 3DFN
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SBR3045CTBQ-13 SBR3045CTBQ-13 Diodes Incorporated SBR3045CTB.pdf Description: DIODE ARRAY SBR 45V 15A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Qualification: AEC-Q101
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SBR40U60CTB-13 SBR40U60CTB-13 Diodes Incorporated SBR40U60CT(B).pdf Description: DIODE ARRAY SBR 60V 20A TO220AB
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SBRT10M50SP5-13 SBRT10M50SP5-13 Diodes Incorporated SBRT10M50SP5.pdf Description: DIODE SBR 50V 10A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 50 V
Qualification: AEC-Q101
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SBRT10M50SP5-13D SBRT10M50SP5-13D Diodes Incorporated Description: DIODE SBR 50V 10A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 50 V
Qualification: AEC-Q101
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SBRT10U50SP5-13D SBRT10U50SP5-13D Diodes Incorporated SBRT10U50SP5.pdf Description: DIODE SBR 50V 10A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 50 V
Qualification: AEC-Q101
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SBRT15U100SP5-13 SBRT15U100SP5-13 Diodes Incorporated SBRT15U100SP5.pdf Description: DIODE SBR 100V 15A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 15A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Qualification: AEC-Q101
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SBRT15U50SP5-7D SBRT15U50SP5-7D Diodes Incorporated SBRT15U50SP5.pdf Description: DIODE SBR 50V 15A POWERDI5
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: PowerDI™ 5
Current - Average Rectified (Io): 15A
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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SBRT20M60SP5-13D SBRT20M60SP5-13D Diodes Incorporated SBRT20M60SP5.pdf Description: DIODE SBR 60V 20A POWERDI5
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: PowerDI™ 5
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 20 A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 180 µA @ 60 V
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Tape & Reel (TR)
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SBRT20U60SP5-13D SBRT20U60SP5-13D Diodes Incorporated SBRT20U60SP5.pdf Description: DIODE SBR 60V 20A POWERDI5
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: PowerDI™ 5
Current - Average Rectified (Io): 20A
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Tape & Reel (TR)
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SBRT25M50SLP-13 SBRT25M50SLP-13 Diodes Incorporated SBRT25M50SLP.pdf Description: DIODE SBR 50V 25A POWERDI5060-8
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 120 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 25 A
Voltage - DC Reverse (Vr) (Max): 50 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: PowerDI5060-8
Current - Average Rectified (Io): 25A
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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SBRT60U100CT SBRT60U100CT Diodes Incorporated SBRT60U100CT.pdf Description: DIODE ARRAY SBR 100V 30A TO220-3
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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TL431AS-13 TL431AS-13 Diodes Incorporated TL431_432.pdf Description: IC VREF SHUNT ADJ 1% 8SO
Supplier Device Package: 8-SO
Operating Temperature: -40°C ~ 125°C (TA)
Reference Type: Shunt
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Voltage - Output (Max): 36 V
Current - Output: 100 mA
Current - Cathode: 700 µA
Part Status: Active
Voltage - Output (Min/Fixed): 2.495V
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ULN2003AS16-13 ULN2003AS16-13 Diodes Incorporated ULN200xA.pdf Description: IC PWR RELAY 7NPN 1:1 16SO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Darlington
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: Parallel
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SO
Part Status: Active
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ZXMS6002GQTA ZXMS6002GQTA Diodes Incorporated Description: IC PWR DRIVER N-CHAN 1:1 SOT223
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AZV358GTR-E1 AZV358.pdf
Hersteller: Diodes Incorporated
Description: IC OP AMP GP DUAL 8-TSSOP
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AZV358GTR-G1 AZV358.pdf
Hersteller: Diodes Incorporated
Description: IC OP AMP GP DUAL 8-TSSOP
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AZV358MMTR-E1 AZV358.pdf
AZV358MMTR-E1
Hersteller: Diodes Incorporated
Description: IC OP AMP GP DUAL 8-MSOP
Produkt ist nicht verfügbar
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AZV358MTR-G1 AZV358.pdf
AZV358MTR-G1
Hersteller: Diodes Incorporated
Description: IC OP AMP GP DUAL 8-SOIC
Produkt ist nicht verfügbar
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AZV393GTR-E1 AZV393.pdf
AZV393GTR-E1
Hersteller: Diodes Incorporated
Description: IC OP AMP GP DUAL 8-TSSOP
Produkt ist nicht verfügbar
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AZV393GTR-G1 AZV393.pdf
AZV393GTR-G1
Hersteller: Diodes Incorporated
Description: IC OP AMP GP DUAL 8-TSSOP
Produkt ist nicht verfügbar
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AZV393MMTR-E1 AZV393.pdf
AZV393MMTR-E1
Hersteller: Diodes Incorporated
Description: IC OP AMP GP DUAL 8-MSOP
Produkt ist nicht verfügbar
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AZV393MTR-E1 AZV393.pdf
AZV393MTR-E1
Hersteller: Diodes Incorporated
Description: IC OP AMP GP DUAL 8-MSOP
Produkt ist nicht verfügbar
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AZV832MTR-G1 AZV831_2.pdf
AZV832MTR-G1
Hersteller: Diodes Incorporated
Description: IC CMOS 2 CIRCUIT 8SOIC
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Voltage - Supply Span (Max): 5.5 V
Voltage - Supply Span (Min): 1.6 V
Current - Output / Channel: 185 mA
Number of Circuits: 2
Supplier Device Package: 8-SOIC
Voltage - Input Offset: 500 µV
Current - Input Bias: 1 pA
Gain Bandwidth Product: 1 MHz
Slew Rate: 0.45V/µs
Current - Supply: 70µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
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BAV5004WS-7
BAV5004WS-7
Hersteller: Diodes Incorporated
Description: DIODE GEN PURP 350V 300MA SOD323
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 1 µA @ 240 V
Voltage - Forward (Vf) (Max) @ If: 1.29 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 350 V
Part Status: Obsolete
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 300mA
Capacitance @ Vr, F: 2.5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
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D14V0H1U2WS-7 D14V0H1U2WS.pdf
D14V0H1U2WS-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 14VWM 25VC
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D55V0M1B2WS-7 D55V0M1B2WS.pdf
D55V0M1B2WS-7
Hersteller: Diodes Incorporated
Description: TVS DIODE 55VWM 100VC SOD323
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Power Line Protection: No
Power - Peak Pulse: 200W
Voltage - Clamping (Max) @ Ipp: 100V
Voltage - Breakdown (Min): 57V
Bidirectional Channels: 1
Supplier Device Package: SOD-323
Voltage - Reverse Standoff (Typ): 55V (Max)
Current - Peak Pulse (10/1000µs): 2A (8/20µs)
Capacitance @ Frequency: 14pF @ 1MHz
Applications: General Purpose
Operating Temperature: -65°C ~ 150°C (TJ)
Type: Zener
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DDZ9701Q-7 ds30410.pdf
DDZ9701Q-7
Hersteller: Diodes Incorporated
Description: DIODE ZENER 14V 500MW SOD123
Tolerance: ±5%
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 50 nA @ 10.6 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Power - Max: 500 mW
Part Status: Active
Supplier Device Package: SOD-123
Voltage - Zener (Nom) (Vz): 14 V
Operating Temperature: -65°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOD-123
auf Bestellung 210000 Stücke:
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3000+0.081 EUR
6000+0.07 EUR
15000+0.06 EUR
30000+0.056 EUR
75000+0.052 EUR
150000+0.045 EUR
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DMC2400UV-13 DMC2400UV.pdf
DMC2400UV-13
Hersteller: Diodes Incorporated
Description: MOSFET N/P-CH 20V SOT563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 450mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.03A, 700mA
Input Capacitance (Ciss) (Max) @ Vds: 37.1pF @ 10V
Rds On (Max) @ Id, Vgs: 480mOhm @ 200mA, 5V
Gate Charge (Qg) (Max) @ Vgs: 0.5nC @ 4.5V
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: SOT-563
Part Status: Active
Produkt ist nicht verfügbar
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DMG3418L-13 DMG3418L.pdf
DMG3418L-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 4A SOT23
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 1.4W (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 464.3 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 5.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 30000 Stücke:
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10000+0.15 EUR
30000+0.14 EUR
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DMJ7N70SK3-13 DMJ7N70SK3.pdf
DMJ7N70SK3-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 700V 3.9A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 2.5A, 10V
Power Dissipation (Max): 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 700 V
Gate Charge (Qg) (Max) @ Vgs: 13.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 351 pF @ 50 V
Produkt ist nicht verfügbar
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DMN10H099SFG-13 DMN10H099SFG.pdf
DMN10H099SFG-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 100V 4.2A PWRDI3333
auf Bestellung 3000 Stücke:
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DMN2011UFDE-13 DMN2011UFDE.pdf
DMN2011UFDE-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 11.7A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 3372 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: U-DFN2020-6 (Type E)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 610mW (Ta)
Rds On (Max) @ Id, Vgs: 9.5mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 11.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMN2022UFDF-13 DMN2022UFDF.pdf
DMN2022UFDF-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 20V 7.9A 6UDFN
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 907 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 8 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: U-DFN2020-6 (Type F)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 660mW (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4A, 4.5V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta)
FET Type: N-Channel
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10000+0.24 EUR
50000+0.23 EUR
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DMN3067LW-13 DMN3067LW.pdf
DMN3067LW-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 2.6A SOT-323
Input Capacitance (Ciss) (Max) @ Vds: 447 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 4.6 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Active
Supplier Device Package: SOT-323
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 500mW (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 2.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
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10000+0.14 EUR
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DMN33D8LDW-13 DMN33D8LDW.pdf
DMN33D8LDW-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 30V 0.25A
Produkt ist nicht verfügbar
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DMN33D8LT-7 DMN33D8LT.pdf
DMN33D8LT-7
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 30V 0.115A
Produkt ist nicht verfügbar
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DMN65D8LDWQ-13 DMN65D8LDWQ.pdf
DMN65D8LDWQ-13
Hersteller: Diodes Incorporated
Description: MOSFET 2N-CH 60V 0.18A SOT363
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: SOT-363
Vgs(th) (Max) @ Id: 2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.87nC @ 10V
Rds On (Max) @ Id, Vgs: 6Ohm @ 115mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 22pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 180mA
Drain to Source Voltage (Vdss): 60V
Power - Max: 300mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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10000+0.12 EUR
20000+0.11 EUR
30000+0.11 EUR
50000+0.1 EUR
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DMNH6042SSD-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH
Produkt ist nicht verfügbar
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DMP1012UCB9-7 DMP1012UCB9.pdf
DMP1012UCB9-7
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 8V 10A U-WLB1515-9
Packaging: Tape & Reel (TR)
Package / Case: 9-UFBGA, WLBGA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 10mOhm @ 2A, 4.5V
Power Dissipation (Max): 890mW (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: U-WLB1515-9
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): -6V
Drain to Source Voltage (Vdss): 8 V
Gate Charge (Qg) (Max) @ Vgs: 10.5 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 4 V
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3000+0.58 EUR
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DMP1022UFDF-13 DMP1022UFDF.pdf
DMP1022UFDF-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 12V 9.5A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 2712 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 48.3 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Supplier Device Package: U-DFN2020-6 (Type F)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Power Dissipation (Max): 730mW (Ta)
Rds On (Max) @ Id, Vgs: 14.8mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 90000 Stücke:
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10000+0.31 EUR
20000+0.29 EUR
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DMP2006UFG-13
DMP2006UFG-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 17.5A POWERDI
auf Bestellung 84000 Stücke:
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DMP2033UVT-13 DMP2033UVT.pdf
DMP2033UVT-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 20V 4.2A TSOT-26
Input Capacitance (Ciss) (Max) @ Vds: 845 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 10.4 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: TSOT-26
Vgs(th) (Max) @ Id: 900mV @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 65mOhm @ 4.2A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
auf Bestellung 40000 Stücke:
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10000+0.24 EUR
20000+0.21 EUR
30000+0.2 EUR
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DMP213DUFA-7B DMP213DUFA.pdf
DMP213DUFA-7B
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 25V 145MA 3DFN
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 145mA (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 200mA, 4.5V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: X2-DFN0806-3
Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V
Vgs (Max): -8V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 0.35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 27.2 pF @ 10 V
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DMP3065LVT-13 DMP3065LVT.pdf
DMP3065LVT-13
Hersteller: Diodes Incorporated
Description: MOSFET P-CH 30V 5.1A TSOT-26
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TSOT-26
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 1.2W (Ta)
Rds On (Max) @ Id, Vgs: 42mOhm @ 4.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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DMTH6004SCTB-13 DMTH6004SCTB.pdf
DMTH6004SCTB-13
Hersteller: Diodes Incorporated
Description: MOSFET N-CH 60V 100A TO263AB
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 4556 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 95.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: TO-263
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 4.7W (Ta), 136W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 22400 Stücke:
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800+2.53 EUR
1600+2.14 EUR
2400+2.03 EUR
5600+1.96 EUR
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DXT13003DK-13
DXT13003DK-13
Hersteller: Diodes Incorporated
Description: TRANS NPN 450V 1.5A TO-252-3
Power - Max: 1.6 W
Voltage - Collector Emitter Breakdown (Max): 450 V
Current - Collector (Ic) (Max): 1.5 A
Part Status: Obsolete
Supplier Device Package: TO-252-3
Frequency - Transition: 4MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 16 @ 500mA, 2V
Vce Saturation (Max) @ Ib, Ic: 400mV @ 250mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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EAN60923001
Hersteller: Diodes Incorporated
Description: IC REG LINEAR
Produkt ist nicht verfügbar
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GP168MTR-G1
Hersteller: Diodes Incorporated
Description: IC OFFLINE SWITCH
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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GPR343KTR-G1
Hersteller: Diodes Incorporated
Description: IC REG CTLR AC/DC GEN3
Part Status: Active
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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HL3051MTR-G1
Hersteller: Diodes Incorporated
Description: IC LED DRIVER RGLTR DIM
Produkt ist nicht verfügbar
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LM2901AS14-13 LM2901-03.pdf
LM2901AS14-13
Hersteller: Diodes Incorporated
Description: IC COMPARATOR 4 DIFF 14SO
Current - Output (Typ): 16mA @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Voltage - Input Offset (Max): 2mV @ 5V
Current - Quiescent (Max): 2.5mA
Supplier Device Package: 14-SO
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Operating Temperature: -40°C ~ 125°C
Type: General Purpose
Number of Elements: 4
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 10000 Stücke:
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2500+0.26 EUR
5000+0.24 EUR
7500+0.23 EUR
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LM2902AS14-13 LM2902-04.pdf
LM2902AS14-13
Hersteller: Diodes Incorporated
Description: IC OPAMP GP 4 CIRCUIT 14SO
Voltage - Supply Span (Max): 36 V
Voltage - Supply Span (Min): 3 V
Current - Output / Channel: 40 mA
Number of Circuits: 4
Supplier Device Package: 14-SO
Voltage - Input Offset: 1 mV
Current - Input Bias: 20 nA
Gain Bandwidth Product: 700 kHz
Slew Rate: 0.3V/µs
Current - Supply: 700µA (x4 Channels)
Operating Temperature: -40°C ~ 125°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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2500+0.26 EUR
5000+0.24 EUR
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12500+0.21 EUR
17500+0.2 EUR
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LM2902AT14-13 LM2902-04.pdf
LM2902AT14-13
Hersteller: Diodes Incorporated
Description: IC OPAMP GP 4 CIRCUIT 14TSSOP
Voltage - Supply Span (Max): 36 V
Voltage - Supply Span (Min): 3 V
Current - Output / Channel: 40 mA
Number of Circuits: 4
Supplier Device Package: 14-TSSOP
Voltage - Input Offset: 1 mV
Current - Input Bias: 20 nA
Gain Bandwidth Product: 700 kHz
Slew Rate: 0.3V/µs
Current - Supply: 700µA (x4 Channels)
Operating Temperature: -40°C ~ 125°C
Amplifier Type: General Purpose
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 127500 Stücke:
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2500+0.24 EUR
5000+0.21 EUR
7500+0.2 EUR
12500+0.19 EUR
17500+0.18 EUR
62500+0.15 EUR
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LM2903S-13 LM2901-03.pdf
LM2903S-13
Hersteller: Diodes Incorporated
Description: IC COMPARATOR 2 DIFF 8SO
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 8-SO
Current - Quiescent (Max): 1.7mA
Voltage - Input Offset (Max): 7mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 16mA @ 5V
auf Bestellung 82500 Stücke:
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AnzahlPrivatkunde
2500+0.23 EUR
5000+0.21 EUR
12500+0.19 EUR
25000+0.18 EUR
62500+0.17 EUR
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LX8213-33ISE-TR
Hersteller: Diodes Incorporated
Description: IC REG LDO SOT25
Produkt ist nicht verfügbar
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MBR2045CT-LJ-01 MBR%28F%292045CT-2060CT.pdf
MBR2045CT-LJ-01
Hersteller: Diodes Incorporated
Description: DIODE ARR SCHOTT 45V 10A TO2203
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 10A
Supplier Device Package: TO-220-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 640 mV @ 10 A
Current Coupled to Voltage - Forward (Vf) (Max) @ If: 10
Voltage Coupled to Current - Reverse Leakage @ Vr: 45
Current - Reverse Leakage @ Vr: 100 µA @ 45 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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PAM2306AYPKE PAM2306.pdf
PAM2306AYPKE
Hersteller: Diodes Incorporated
Description: IC REG BUCK 1.8/3.3V UDFN303012
Packaging: Tape & Reel (TR)
Package / Case: 12-UFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Number of Outputs: 2
Function: Step-Down
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 1.5MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: U-DFN3030-12
Synchronous Rectifier: Yes
Voltage - Input (Min): 2.5V
Voltage - Output (Min/Fixed): 1.8V, 3.3V
auf Bestellung 66000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.55 EUR
6000+0.51 EUR
9000+0.49 EUR
15000+0.46 EUR
21000+0.45 EUR
30000+0.44 EUR
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PDS340Q-13 PDS340Q.pdf
PDS340Q-13
Hersteller: Diodes Incorporated
Description: DIODE SCHOTTKY 40V 3A POWERDI5
Produkt ist nicht verfügbar
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SBR20A100CTB-13 SBR20A100CTB.pdf
SBR20A100CTB-13
Hersteller: Diodes Incorporated
Description: DIODE ARR SBR 100V 10A TO263
Current - Reverse Leakage @ Vr: 100 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-263
Current - Average Rectified (Io) (per Diode): 10A
Diode Configuration: 1 Pair Common Cathode
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Qualification: AEC-Q101
Grade: Automotive
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
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SBR2U10LP-7 SBR2U10LP.pdf
SBR2U10LP-7
Hersteller: Diodes Incorporated
Description: DIODE SBR 10V 2A 3DFN
Produkt ist nicht verfügbar
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SBR3045CTBQ-13 SBR3045CTB.pdf
SBR3045CTBQ-13
Hersteller: Diodes Incorporated
Description: DIODE ARRAY SBR 45V 15A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-263
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 15 A
Current - Reverse Leakage @ Vr: 500 µA @ 45 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SBR40U60CTB-13 SBR40U60CT(B).pdf
SBR40U60CTB-13
Hersteller: Diodes Incorporated
Description: DIODE ARRAY SBR 60V 20A TO220AB
Produkt ist nicht verfügbar
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SBRT10M50SP5-13 SBRT10M50SP5.pdf
SBRT10M50SP5-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 50V 10A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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SBRT10M50SP5-13D
SBRT10M50SP5-13D
Hersteller: Diodes Incorporated
Description: DIODE SBR 50V 10A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 10 A
Current - Reverse Leakage @ Vr: 150 µA @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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SBRT10U50SP5-13D SBRT10U50SP5.pdf
SBRT10U50SP5-13D
Hersteller: Diodes Incorporated
Description: DIODE SBR 50V 10A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 10A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 10 A
Current - Reverse Leakage @ Vr: 300 µA @ 50 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.64 EUR
Mindestbestellmenge: 5000 Stücke
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SBRT15U100SP5-13 SBRT15U100SP5.pdf
SBRT15U100SP5-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 100V 15A POWERDI5
Packaging: Tape & Reel (TR)
Package / Case: PowerDI™ 5
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Super Barrier
Current - Average Rectified (Io): 15A
Supplier Device Package: PowerDI™ 5
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 15 A
Current - Reverse Leakage @ Vr: 200 µA @ 100 V
Qualification: AEC-Q101
auf Bestellung 40000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.68 EUR
10000+0.65 EUR
Mindestbestellmenge: 5000 Stücke
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SBRT15U50SP5-7D SBRT15U50SP5.pdf
SBRT15U50SP5-7D
Hersteller: Diodes Incorporated
Description: DIODE SBR 50V 15A POWERDI5
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 15 A
Voltage - DC Reverse (Vr) (Max): 50 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: PowerDI™ 5
Current - Average Rectified (Io): 15A
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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SBRT20M60SP5-13D SBRT20M60SP5.pdf
SBRT20M60SP5-13D
Hersteller: Diodes Incorporated
Description: DIODE SBR 60V 20A POWERDI5
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: PowerDI™ 5
Current - Average Rectified (Io): 20A
Voltage - Forward (Vf) (Max) @ If: 570 mV @ 20 A
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 180 µA @ 60 V
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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SBRT20U60SP5-13D SBRT20U60SP5.pdf
SBRT20U60SP5-13D
Hersteller: Diodes Incorporated
Description: DIODE SBR 60V 20A POWERDI5
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 400 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 20 A
Voltage - DC Reverse (Vr) (Max): 60 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: PowerDI™ 5
Current - Average Rectified (Io): 20A
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: PowerDI™ 5
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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SBRT25M50SLP-13 SBRT25M50SLP.pdf
SBRT25M50SLP-13
Hersteller: Diodes Incorporated
Description: DIODE SBR 50V 25A POWERDI5060-8
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 120 µA @ 50 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 25 A
Voltage - DC Reverse (Vr) (Max): 50 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: PowerDI5060-8
Current - Average Rectified (Io): 25A
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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SBRT60U100CT SBRT60U100CT.pdf
SBRT60U100CT
Hersteller: Diodes Incorporated
Description: DIODE ARRAY SBR 100V 30A TO220-3
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 300 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 780 mV @ 30 A
Voltage - DC Reverse (Vr) (Max): 100 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-220-3
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Super Barrier
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Produkt ist nicht verfügbar
Mindestbestellmenge: 50 Stücke
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TL431AS-13 TL431_432.pdf
TL431AS-13
Hersteller: Diodes Incorporated
Description: IC VREF SHUNT ADJ 1% 8SO
Supplier Device Package: 8-SO
Operating Temperature: -40°C ~ 125°C (TA)
Reference Type: Shunt
Mounting Type: Surface Mount
Output Type: Adjustable
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Tolerance: ±1%
Packaging: Tape & Reel (TR)
Voltage - Output (Max): 36 V
Current - Output: 100 mA
Current - Cathode: 700 µA
Part Status: Active
Voltage - Output (Min/Fixed): 2.495V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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ULN2003AS16-13 ULN200xA.pdf
ULN2003AS16-13
Hersteller: Diodes Incorporated
Description: IC PWR RELAY 7NPN 1:1 16SO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Darlington
Mounting Type: Surface Mount
Number of Outputs: 7
Interface: Parallel
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 105°C (TA)
Output Configuration: Low Side
Input Type: Inverting
Voltage - Load: 50V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 500mA
Ratio - Input:Output: 1:1
Supplier Device Package: 16-SO
Part Status: Active
auf Bestellung 25000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.37 EUR
5000+0.35 EUR
7500+0.32 EUR
12500+0.31 EUR
17500+0.3 EUR
25000+0.29 EUR
Mindestbestellmenge: 2500 Stücke
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ZXMS6002GQTA
ZXMS6002GQTA
Hersteller: Diodes Incorporated
Description: IC PWR DRIVER N-CHAN 1:1 SOT223
Produkt ist nicht verfügbar
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