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TN2106K1-G TN2106K1-G Microchip Technology TN2106-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005942A.pdf Description: MOSFET N-CH 60V 280MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280mA (Tj)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-236AB (SOT23)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
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TN2124K1-G TN2124K1-G Microchip Technology TN2124-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005698A.pdf Description: MOSFET N-CH 240V 134MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 134mA (Tj)
Rds On (Max) @ Id, Vgs: 15Ohm @ 120mA, 4.5V
Power Dissipation (Max): 360mW (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-236AB (SOT23)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
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3000+0.96 EUR
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TN2501N8-G TN2501N8-G Microchip Technology filehandler.aspx?ddocname=en570663 Description: MOSFET N-CH 18V 400MA SOT89-3
Produkt ist nicht verfügbar
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TN2510N8-G TN2510N8-G Microchip Technology TN2510-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005950A.pdf Description: MOSFET N-CH 100V 730MA TO243AA
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 730mA (Tj)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
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TN2524N8-G TN2524N8-G Microchip Technology TN2524-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005952A.pdf Description: MOSFET N-CH 240V 360MA TO243AA
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
Drain to Source Voltage (Vdss): 240 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-243AA (SOT-89)
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 1.6W (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 360mA (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TN2540N3-G-P002 TN2540N3-G-P002 Microchip Technology TN2540-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005954A.pdf Description: MOSFET N-CH 400V 175MA TO92-3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 175mA (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-92-3
Produkt ist nicht verfügbar
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TN2540N8-G TN2540N8-G Microchip Technology TN2540-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005954A.pdf Description: MOSFET N-CH 400V 260MA TO243AA
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260mA (Tj)
Rds On (Max) @ Id, Vgs: 12Ohm @ 500mA, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
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2000+1.9 EUR
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TN5325K1-G TN5325K1-G Microchip Technology 20005709A.pdf Description: MOSFET N-CH 250V 150MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-236AB (SOT23)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V
Produkt ist nicht verfügbar
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TN5325N3-G-P002 TN5325N3-G-P002 Microchip Technology 20005709A.pdf Description: MOSFET N-CH 250V 215MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 215mA (Ta)
Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V
Produkt ist nicht verfügbar
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TN5325N8-G TN5325N8-G Microchip Technology 20005709A.pdf Description: MOSFET N-CH 250V 316MA TO243AA
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 316mA (Tj)
Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V
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2000+0.97 EUR
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TP0606N3-G-P002 TP0606N3-G-P002 Microchip Technology TP0606.pdf Description: MOSFET P-CH 60V 320MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Tj)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Produkt ist nicht verfügbar
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TP0606N3-G-P003 TP0606N3-G-P003 Microchip Technology TP0606.pdf Description: MOSFET P-CH 60V 320MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Tj)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Produkt ist nicht verfügbar
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TP0610T-G TP0610T-G Microchip Technology TP0610T-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005701B.pdf Description: MOSFET P-CH 60V 120MA TO236AB
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-236AB (SOT23)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Power Dissipation (Max): 360mW (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 120mA (Tj)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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TP2104K1-G TP2104K1-G Microchip Technology TP2104-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005958A.pdf Description: MOSFET P-CH 40V 160MA TO236AB
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Drain to Source Voltage (Vdss): 40 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-236AB (SOT23)
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 360mW (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 160mA (Tj)
FET Type: P-Channel
Produkt ist nicht verfügbar
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TP2424N8-G TP2424N8-G Microchip Technology filehandler.aspx?ddocname=en570673 Description: MOSFET P-CH 240V 0.316A SOT89-3
Produkt ist nicht verfügbar
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TP2435N8-G TP2435N8-G Microchip Technology TP2435-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005961A.pdf Description: MOSFET P-CH 350V 231MA TO243AA
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Drain to Source Voltage (Vdss): 350 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Supplier Device Package: TO-243AA (SOT-89)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 15Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 231mA (Tj)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
auf Bestellung 2000 Stücke:
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2000+2.26 EUR
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TP2510N8-G TP2510N8-G Microchip Technology TP2510-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005965.pdf Description: MOSFET P-CH 100V 480MA TO243AA
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 480mA (Tj)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
Produkt ist nicht verfügbar
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TP2522N8-G TP2522N8-G Microchip Technology filehandler.aspx?ddocname=en570678 Description: MOSFET P-CH 220V 0.26A SOT89-3
Produkt ist nicht verfügbar
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TP2540N3-G-P002 TP2540N3-G-P002 Microchip Technology filehandler.aspx?ddocname=en570680 Description: MOSFET P-CH 400V 0.086A TO92-3
Produkt ist nicht verfügbar
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TP2540N8-G TP2540N8-G Microchip Technology TP2540-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20006371A.pdf Description: MOSFET P-CH 400V 125MA TO243AA
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 125mA (Tj)
Rds On (Max) @ Id, Vgs: 25Ohm @ 100mA, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
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2000+2.23 EUR
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TP5322N8-G TP5322N8-G Microchip Technology filehandler.aspx?ddocname=en570683 Description: MOSFET P-CH 220V 0.26A SOT89-3
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TP5335K1-G TP5335K1-G Microchip Technology TP5335-Data-Sheet-20005704D.pdf Description: MOSFET P-CH 350V 85MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 85mA (Tj)
Rds On (Max) @ Id, Vgs: 30Ohm @ 200mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-236AB (SOT23)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V
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VN0106N3-G-P003 VN0106N3-G-P003 Microchip Technology VN0106%20C081913.pdf Description: MOSFET N-CH 60V 350MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V
Produkt ist nicht verfügbar
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VN0606L-G-P003 VN0606L-G-P003 Microchip Technology VN0606%20B081913.pdf Description: MOSFET N-CH 60V 330MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330mA (Tj)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Produkt ist nicht verfügbar
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VN10KN3-G-P003 VN10KN3-G-P003 Microchip Technology VN10K-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005983A.pdf Description: MOSFET N-CH 60V 310MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Tj)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Produkt ist nicht verfügbar
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VN10KN3-G-P013 VN10KN3-G-P013 Microchip Technology VN10K-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005983A.pdf Description: MOSFET N-CH 60V 310MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Tj)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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VN10KN3-G-P014 VN10KN3-G-P014 Microchip Technology VN10K-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005983A.pdf Description: MOSFET N-CH 60V 310MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Tj)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VN1206L-G-P002 VN1206L-G-P002 Microchip Technology VN1206%20B081913.pdf Description: MOSFET N-CH 120V 230MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: TO-92-3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 1W (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 230mA (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
VN2110K1-G VN2110K1-G Microchip Technology VN2110-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-20005793A.pdf Description: MOSFET N-CH 100V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tj)
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
auf Bestellung 9000 Stücke:
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3000+0.73 EUR
Mindestbestellmenge: 3000 Stücke
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VN2410L-G-P013 VN2410L-G-P013 Microchip Technology VN2410-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20006534A.pdf Description: MOSFET N-CH 240V 190MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
Drain to Source Voltage (Vdss): 240 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: TO-92-3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 1W (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 190mA (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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VN2410L-G-P014 VN2410L-G-P014 Microchip Technology VN2410-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20006534A.pdf Description: MOSFET N-CH 240V 190MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
Drain to Source Voltage (Vdss): 240 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: TO-92-3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 1W (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 190mA (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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VN2450N8-G VN2450N8-G Microchip Technology VN2450_2009.pdf Description: MOSFET N-CH 500V 250MA TO243AA
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Tj)
Rds On (Max) @ Id, Vgs: 13Ohm @ 400mA, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+1.7 EUR
Mindestbestellmenge: 2000 Stücke
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VN2460N3-G-P003 VN2460N3-G-P003 Microchip Technology VN2460-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005994A.pdf Description: MOSFET N-CH 600V 160MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160mA (Tj)
Rds On (Max) @ Id, Vgs: 20Ohm @ 100mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 2mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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VN2460N3-G-P014 VN2460N3-G-P014 Microchip Technology VN2460-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005994A.pdf Description: MOSFET N-CH 600V 160MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160mA (Tj)
Rds On (Max) @ Id, Vgs: 20Ohm @ 100mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 2mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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VN2460N8-g VN2460N8-g Microchip Technology VN2460-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005994A.pdf Description: MOSFET N-CH 600V 200MA TO243AA
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tj)
Rds On (Max) @ Id, Vgs: 20Ohm @ 100mA, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 4V @ 2mA
Supplier Device Package: TO-243AA (SOT-89)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
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Lieferzeit 10-14 Tag (e)
2000+1.73 EUR
Mindestbestellmenge: 2000 Stücke
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VN3205N3-G-P002 VN3205N3-G-P002 Microchip Technology VN3205-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005995A.pdf Description: MOSFET N-CH 50V 1.2A TO92-3
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-92-3
Vgs(th) (Max) @ Id: 2.4V @ 10mA
Power Dissipation (Max): 1W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.2A (Tj)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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VN3205N8-G VN3205N8-G Microchip Technology VN3205-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005995A.pdf Description: MOSFET N-CH 50V 1.5A TO243AA
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tj)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 10mA
Supplier Device Package: TO-243AA (SOT-89)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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VP0550N3-G-P013 VP0550N3-G-P013 Microchip Technology VP0550-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20006003A.pdf Description: MOSFET P-CH 500V 54MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 25 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-92-3
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Power Dissipation (Max): 1W (Tc)
Rds On (Max) @ Id, Vgs: 125Ohm @ 10mA, 10V
Current - Continuous Drain (Id) @ 25°C: 54mA (Tj)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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VP2110K1-G VP2110K1-G Microchip Technology VP2110%20B082313.pdf Description: MOSFET P-CH 100V 120MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Tj)
Rds On (Max) @ Id, Vgs: 12Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-236AB (SOT23)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.94 EUR
Mindestbestellmenge: 3000 Stücke
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VP2450N8-g VP2450N8-g Microchip Technology 20005569A.pdf Description: MOSFET P-CH 500V 160MA TO243AA
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 160mA (Tj)
Rds On (Max) @ Id, Vgs: 30Ohm @ 100mA, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 25 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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AT24C01D-SSHM-B AT24C01D-SSHM-B Microchip Technology AT24C01D-AT24C02D-I2C-Compatible-Two-Wire-Serial-EEPROM-1Kbit-2Kbit-20006100A.pdf Description: IC EEPROM 1KBIT I2C 1MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 4.5 µs
Memory Organization: 128 x 8
DigiKey Programmable: Verified
auf Bestellung 19150 Stücke:
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59+0.3 EUR
100+0.29 EUR
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AT24C01D-XHM-B AT24C01D-XHM-B Microchip Technology AT24C01D-AT24C02D-I2C-Compatible-Two-Wire-Serial-EEPROM-1Kbit-2Kbit-20006100A.pdf Description: IC EEPROM 1KBIT I2C 1MHZ 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 4.5 µs
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
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57+0.31 EUR
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AT24C04D-SSHM-B AT24C04D-SSHM-B Microchip Technology Atmel-8896E-SEEPROM-AT24C04D-Datasheet.pdf Description: IC EEPROM 4KBIT I2C 1MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
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AT24C04D-XHM-B AT24C04D-XHM-B Microchip Technology Atmel-8896E-SEEPROM-AT24C04D-Datasheet.pdf Description: IC EEPROM 4KBIT I2C 1MHZ 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 512 x 8
DigiKey Programmable: Verified
auf Bestellung 15744 Stücke:
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47+0.38 EUR
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AT34C04-SS5M-B AT34C04-SS5M-B Microchip Technology Atmel-8827G-SEEPROM-AT34C04-Datasheet.pdf Description: IC EEPROM 4KBIT I2C 1MHZ 8SOIC
Operating Temperature: -20°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Memory Organization: 512 x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-SOIC
Memory Format: EEPROM
Clock Frequency: 1 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 3.6V
auf Bestellung 2416 Stücke:
Lieferzeit 10-14 Tag (e)
36+0.49 EUR
39+0.46 EUR
100+0.44 EUR
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AT34C04-X5M-B AT34C04-X5M-B Microchip Technology Atmel-8827G-SEEPROM-AT34C04-Datasheet.pdf Description: IC EEPROM 4KBIT I2C 1MHZ 8TSSOP
DigiKey Programmable: Not Verified
Memory Organization: 512 x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-TSSOP
Memory Format: EEPROM
Clock Frequency: 1 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 3.6V
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tube
Operating Temperature: -20°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Kbit
auf Bestellung 2743 Stücke:
Lieferzeit 10-14 Tag (e)
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100+0.44 EUR
Mindestbestellmenge: 36 Stücke
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AT24C01D-MAHM-T AT24C01D-MAHM-T Microchip Technology AT24C01D-AT24C02D-I2C-Compatible-Two-Wire-Serial-EEPROM-1Kbit-2Kbit-20006100A.pdf Description: IC EEPROM 1KBIT I2C 1MHZ 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 4.5 µs
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
auf Bestellung 5000 Stücke:
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5000+0.36 EUR
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AT24C01D-SSHM-T AT24C01D-SSHM-T Microchip Technology AT24C01D-AT24C02D-I2C-Compatible-Two-Wire-Serial-EEPROM-1Kbit-2Kbit-20006100A.pdf Description: IC EEPROM 1KBIT I2C 1MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 4.5 µs
Memory Organization: 128 x 8
DigiKey Programmable: Verified
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4000+0.29 EUR
Mindestbestellmenge: 4000 Stücke
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AT24C01D-STUM-T AT24C01D-STUM-T Microchip Technology AT24C01D-AT24C02D-I2C-Compatible-Two-Wire-Serial-EEPROM-1Kbit-2Kbit-20006100A.pdf Description: IC EEPROM 1KBIT I2C 1MHZ SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-5
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 4.5 µs
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
auf Bestellung 10000 Stücke:
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5000+0.23 EUR
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AT24C01D-XHM-T AT24C01D-XHM-T Microchip Technology AT24C01D-AT24C02D-I2C-Compatible-Two-Wire-Serial-EEPROM-1Kbit-2Kbit-20006100A.pdf Description: IC EEPROM 1KBIT I2C 1MHZ 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 4.5 µs
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AT24C04D-MAHM-T AT24C04D-MAHM-T Microchip Technology Atmel-8896E-SEEPROM-AT24C04D-Datasheet.pdf Description: IC EEPROM 4KBIT I2C 1MHZ 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
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AT24C04D-SSHM-T AT24C04D-SSHM-T Microchip Technology Atmel-8896E-SEEPROM-AT24C04D-Datasheet.pdf Description: IC EEPROM 4KBIT I2C 1MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
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AT24C04D-STUM-T AT24C04D-STUM-T Microchip Technology Atmel-8896E-SEEPROM-AT24C04D-Datasheet.pdf Description: IC EEPROM 4KBIT I2C 1MHZ SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-5
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
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AT24C04D-XHM-T AT24C04D-XHM-T Microchip Technology Atmel-8896E-SEEPROM-AT24C04D-Datasheet.pdf Description: IC EEPROM 4KBIT I2C 1MHZ 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 512 x 8
DigiKey Programmable: Verified
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AT24C32D-MEHM-T AT24C32D-MEHM-T Microchip Technology AT24C32D-I2C-Compatible-Serial-EEPROM-Data-Sheet-20006047A.pdf Description: IC EEPROM 32KBIT I2C 1MHZ 8XDFN
DigiKey Programmable: Not Verified
Memory Organization: 4K x 8
Access Time: 550 ns
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-XDFN (1.8x2.2)
Memory Format: EEPROM
Clock Frequency: 1 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Kbit
Mounting Type: Surface Mount
Package / Case: 8-XFDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AT24C32D-STUM-T AT24C32D-STUM-T Microchip Technology AT24C32D-I2C-Compatible-Serial-EEPROM-Data-Sheet-20006047A.pdf Description: IC EEPROM 32KBIT I2C SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-5
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 550 ns
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
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AT34C04-MA5M-T AT34C04-MA5M-T Microchip Technology Atmel-8827G-SEEPROM-AT34C04-Datasheet.pdf Description: IC EEPROM 4KBIT I2C 1MHZ 8UDFN
DigiKey Programmable: Not Verified
Memory Organization: 512 x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-UDFN (2x3)
Memory Format: EEPROM
Clock Frequency: 1 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 3.6V
Operating Temperature: -20°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Kbit
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Packaging: Tape & Reel (TR)
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AT34C04-SS5M-T AT34C04-SS5M-T Microchip Technology Atmel-8827G-SEEPROM-AT34C04-Datasheet.pdf Description: IC EEPROM 4KBIT I2C 1MHZ 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 512 x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-SOIC
Memory Format: EEPROM
Clock Frequency: 1 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 3.6V
Operating Temperature: -20°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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AT34C04-X5M-T AT34C04-X5M-T Microchip Technology Atmel-8827G-SEEPROM-AT34C04-Datasheet.pdf Description: IC EEPROM 4KBIT I2C 1MHZ 8TSSOP
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Memory Organization: 512 x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-TSSOP
Memory Format: EEPROM
Clock Frequency: 1 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 3.6V
Operating Temperature: -20°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Kbit
Produkt ist nicht verfügbar
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AT24C01D-MAHM-T AT24C01D-MAHM-T Microchip Technology AT24C01D-AT24C02D-I2C-Compatible-Two-Wire-Serial-EEPROM-1Kbit-2Kbit-20006100A.pdf Description: IC EEPROM 1KBIT I2C 1MHZ 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 4.5 µs
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
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46+0.39 EUR
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TN2106K1-G TN2106-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005942A.pdf
TN2106K1-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 60V 280MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 280mA (Tj)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-236AB (SOT23)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
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TN2124K1-G TN2124-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005698A.pdf
TN2124K1-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 240V 134MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 134mA (Tj)
Rds On (Max) @ Id, Vgs: 15Ohm @ 120mA, 4.5V
Power Dissipation (Max): 360mW (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-236AB (SOT23)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 4.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 240 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
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TN2501N8-G filehandler.aspx?ddocname=en570663
TN2501N8-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 18V 400MA SOT89-3
Produkt ist nicht verfügbar
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TN2510N8-G TN2510-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005950A.pdf
TN2510N8-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 100V 730MA TO243AA
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 730mA (Tj)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
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TN2524N8-G TN2524-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005952A.pdf
TN2524N8-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 240V 360MA TO243AA
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
Drain to Source Voltage (Vdss): 240 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-243AA (SOT-89)
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 1.6W (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 360mA (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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TN2540N3-G-P002 TN2540-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005954A.pdf
TN2540N3-G-P002
Hersteller: Microchip Technology
Description: MOSFET N-CH 400V 175MA TO92-3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 12Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 175mA (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-92-3
Produkt ist nicht verfügbar
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TN2540N8-G TN2540-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005954A.pdf
TN2540N8-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 400V 260MA TO243AA
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 260mA (Tj)
Rds On (Max) @ Id, Vgs: 12Ohm @ 500mA, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
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TN5325K1-G 20005709A.pdf
TN5325K1-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 250V 150MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TA)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 150mA (Ta)
Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-236AB (SOT23)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V
Produkt ist nicht verfügbar
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TN5325N3-G-P002 20005709A.pdf
TN5325N3-G-P002
Hersteller: Microchip Technology
Description: MOSFET N-CH 250V 215MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 215mA (Ta)
Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V
Power Dissipation (Max): 740mW (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V
Produkt ist nicht verfügbar
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TN5325N8-G 20005709A.pdf
TN5325N8-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 250V 316MA TO243AA
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 316mA (Tj)
Rds On (Max) @ Id, Vgs: 7Ohm @ 1A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 250 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V
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2000+0.97 EUR
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TP0606N3-G-P002 TP0606.pdf
TP0606N3-G-P002
Hersteller: Microchip Technology
Description: MOSFET P-CH 60V 320MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Tj)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Produkt ist nicht verfügbar
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TP0606N3-G-P003 TP0606.pdf
TP0606N3-G-P003
Hersteller: Microchip Technology
Description: MOSFET P-CH 60V 320MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 320mA (Tj)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Produkt ist nicht verfügbar
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TP0610T-G TP0610T-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005701B.pdf
TP0610T-G
Hersteller: Microchip Technology
Description: MOSFET P-CH 60V 120MA TO236AB
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-236AB (SOT23)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Power Dissipation (Max): 360mW (Ta)
Rds On (Max) @ Id, Vgs: 10Ohm @ 200mA, 10V
Current - Continuous Drain (Id) @ 25°C: 120mA (Tj)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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AnzahlPreis
3000+1.07 EUR
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TP2104K1-G TP2104-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005958A.pdf
TP2104K1-G
Hersteller: Microchip Technology
Description: MOSFET P-CH 40V 160MA TO236AB
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Drain to Source Voltage (Vdss): 40 V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-236AB (SOT23)
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 360mW (Ta)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 160mA (Tj)
FET Type: P-Channel
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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TP2424N8-G filehandler.aspx?ddocname=en570673
TP2424N8-G
Hersteller: Microchip Technology
Description: MOSFET P-CH 240V 0.316A SOT89-3
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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TP2435N8-G TP2435-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005961A.pdf
TP2435N8-G
Hersteller: Microchip Technology
Description: MOSFET P-CH 350V 231MA TO243AA
Input Capacitance (Ciss) (Max) @ Vds: 200 pF @ 25 V
Drain to Source Voltage (Vdss): 350 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 3V, 10V
Supplier Device Package: TO-243AA (SOT-89)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 15Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 231mA (Tj)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2000+2.26 EUR
Mindestbestellmenge: 2000 Stücke
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TP2510N8-G TP2510-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005965.pdf
TP2510N8-G
Hersteller: Microchip Technology
Description: MOSFET P-CH 100V 480MA TO243AA
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 480mA (Tj)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 750mA, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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TP2522N8-G filehandler.aspx?ddocname=en570678
TP2522N8-G
Hersteller: Microchip Technology
Description: MOSFET P-CH 220V 0.26A SOT89-3
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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TP2540N3-G-P002 filehandler.aspx?ddocname=en570680
TP2540N3-G-P002
Hersteller: Microchip Technology
Description: MOSFET P-CH 400V 0.086A TO92-3
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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TP2540N8-G TP2540-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20006371A.pdf
TP2540N8-G
Hersteller: Microchip Technology
Description: MOSFET P-CH 400V 125MA TO243AA
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 125mA (Tj)
Rds On (Max) @ Id, Vgs: 25Ohm @ 100mA, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 400 V
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2000+2.23 EUR
Mindestbestellmenge: 2000 Stücke
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TP5322N8-G filehandler.aspx?ddocname=en570683
TP5322N8-G
Hersteller: Microchip Technology
Description: MOSFET P-CH 220V 0.26A SOT89-3
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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TP5335K1-G TP5335-Data-Sheet-20005704D.pdf
TP5335K1-G
Hersteller: Microchip Technology
Description: MOSFET P-CH 350V 85MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 85mA (Tj)
Rds On (Max) @ Id, Vgs: 30Ohm @ 200mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-236AB (SOT23)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 350 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 25 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.74 EUR
Mindestbestellmenge: 3000 Stücke
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VN0106N3-G-P003 VN0106%20C081913.pdf
VN0106N3-G-P003
Hersteller: Microchip Technology
Description: MOSFET N-CH 60V 350MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Tj)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 65 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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VN0606L-G-P003 VN0606%20B081913.pdf
VN0606L-G-P003
Hersteller: Microchip Technology
Description: MOSFET N-CH 60V 330MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 330mA (Tj)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1A, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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VN10KN3-G-P003 VN10K-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005983A.pdf
VN10KN3-G-P003
Hersteller: Microchip Technology
Description: MOSFET N-CH 60V 310MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Tj)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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VN10KN3-G-P013 VN10K-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005983A.pdf
VN10KN3-G-P013
Hersteller: Microchip Technology
Description: MOSFET N-CH 60V 310MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Tj)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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VN10KN3-G-P014 VN10K-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005983A.pdf
VN10KN3-G-P014
Hersteller: Microchip Technology
Description: MOSFET N-CH 60V 310MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 310mA (Tj)
Rds On (Max) @ Id, Vgs: 5Ohm @ 500mA, 10V
Power Dissipation (Max): 1W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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VN1206L-G-P002 VN1206%20B081913.pdf
VN1206L-G-P002
Hersteller: Microchip Technology
Description: MOSFET N-CH 120V 230MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Supplier Device Package: TO-92-3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 1W (Tc)
Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 230mA (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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VN2110K1-G VN2110-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-20005793A.pdf
VN2110K1-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 100V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tj)
Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
3000+0.73 EUR
Mindestbestellmenge: 3000 Stücke
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VN2410L-G-P013 VN2410-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20006534A.pdf
VN2410L-G-P013
Hersteller: Microchip Technology
Description: MOSFET N-CH 240V 190MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
Drain to Source Voltage (Vdss): 240 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: TO-92-3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 1W (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 190mA (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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VN2410L-G-P014 VN2410-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20006534A.pdf
VN2410L-G-P014
Hersteller: Microchip Technology
Description: MOSFET N-CH 240V 190MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V
Drain to Source Voltage (Vdss): 240 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Part Status: Active
Supplier Device Package: TO-92-3
Vgs(th) (Max) @ Id: 2V @ 1mA
Power Dissipation (Max): 1W (Tc)
Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V
Current - Continuous Drain (Id) @ 25°C: 190mA (Tj)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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VN2450N8-G VN2450_2009.pdf
VN2450N8-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 500V 250MA TO243AA
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 250mA (Tj)
Rds On (Max) @ Id, Vgs: 13Ohm @ 400mA, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 4V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2000+1.7 EUR
Mindestbestellmenge: 2000 Stücke
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VN2460N3-G-P003 VN2460-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005994A.pdf
VN2460N3-G-P003
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 160MA TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160mA (Tj)
Rds On (Max) @ Id, Vgs: 20Ohm @ 100mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 2mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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VN2460N3-G-P014 VN2460-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005994A.pdf
VN2460N3-G-P014
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 160MA TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 160mA (Tj)
Rds On (Max) @ Id, Vgs: 20Ohm @ 100mA, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 4V @ 2mA
Supplier Device Package: TO-92-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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VN2460N8-g VN2460-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005994A.pdf
VN2460N8-g
Hersteller: Microchip Technology
Description: MOSFET N-CH 600V 200MA TO243AA
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Tj)
Rds On (Max) @ Id, Vgs: 20Ohm @ 100mA, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 4V @ 2mA
Supplier Device Package: TO-243AA (SOT-89)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
2000+1.73 EUR
Mindestbestellmenge: 2000 Stücke
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VN3205N3-G-P002 VN3205-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005995A.pdf
VN3205N3-G-P002
Hersteller: Microchip Technology
Description: MOSFET N-CH 50V 1.2A TO92-3
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-92-3
Vgs(th) (Max) @ Id: 2.4V @ 10mA
Power Dissipation (Max): 1W (Tc)
Rds On (Max) @ Id, Vgs: 300mOhm @ 3A, 10V
Current - Continuous Drain (Id) @ 25°C: 1.2A (Tj)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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VN3205N8-G VN3205-N-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20005995A.pdf
VN3205N8-G
Hersteller: Microchip Technology
Description: MOSFET N-CH 50V 1.5A TO243AA
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tj)
Rds On (Max) @ Id, Vgs: 300mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 2.4V @ 10mA
Supplier Device Package: TO-243AA (SOT-89)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 25 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2000 Stücke
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VP0550N3-G-P013 VP0550-P-Channel-Enhancement-Mode-Vertical-DMOS-FET-Data-Sheet-20006003A.pdf
VP0550N3-G-P013
Hersteller: Microchip Technology
Description: MOSFET P-CH 500V 54MA TO92-3
Input Capacitance (Ciss) (Max) @ Vds: 70 pF @ 25 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: TO-92-3
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Power Dissipation (Max): 1W (Tc)
Rds On (Max) @ Id, Vgs: 125Ohm @ 10mA, 10V
Current - Continuous Drain (Id) @ 25°C: 54mA (Tj)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Packaging: Tape & Box (TB)
Produkt ist nicht verfügbar
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VP2110K1-G VP2110%20B082313.pdf
VP2110K1-G
Hersteller: Microchip Technology
Description: MOSFET P-CH 100V 120MA TO236AB
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 120mA (Tj)
Rds On (Max) @ Id, Vgs: 12Ohm @ 500mA, 10V
Power Dissipation (Max): 360mW (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-236AB (SOT23)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V
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VP2450N8-g 20005569A.pdf
VP2450N8-g
Hersteller: Microchip Technology
Description: MOSFET P-CH 500V 160MA TO243AA
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 160mA (Tj)
Rds On (Max) @ Id, Vgs: 30Ohm @ 100mA, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3.5V @ 1mA
Supplier Device Package: TO-243AA (SOT-89)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Input Capacitance (Ciss) (Max) @ Vds: 190 pF @ 25 V
Produkt ist nicht verfügbar
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AT24C01D-SSHM-B AT24C01D-AT24C02D-I2C-Compatible-Two-Wire-Serial-EEPROM-1Kbit-2Kbit-20006100A.pdf
AT24C01D-SSHM-B
Hersteller: Microchip Technology
Description: IC EEPROM 1KBIT I2C 1MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 4.5 µs
Memory Organization: 128 x 8
DigiKey Programmable: Verified
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59+0.3 EUR
100+0.29 EUR
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AT24C01D-XHM-B AT24C01D-AT24C02D-I2C-Compatible-Two-Wire-Serial-EEPROM-1Kbit-2Kbit-20006100A.pdf
AT24C01D-XHM-B
Hersteller: Microchip Technology
Description: IC EEPROM 1KBIT I2C 1MHZ 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 4.5 µs
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
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57+0.31 EUR
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AT24C04D-SSHM-B Atmel-8896E-SEEPROM-AT24C04D-Datasheet.pdf
AT24C04D-SSHM-B
Hersteller: Microchip Technology
Description: IC EEPROM 4KBIT I2C 1MHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
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AT24C04D-XHM-B Atmel-8896E-SEEPROM-AT24C04D-Datasheet.pdf
AT24C04D-XHM-B
Hersteller: Microchip Technology
Description: IC EEPROM 4KBIT I2C 1MHZ 8TSSOP
Packaging: Tube
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 512 x 8
DigiKey Programmable: Verified
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46+0.39 EUR
47+0.38 EUR
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AT34C04-SS5M-B Atmel-8827G-SEEPROM-AT34C04-Datasheet.pdf
AT34C04-SS5M-B
Hersteller: Microchip Technology
Description: IC EEPROM 4KBIT I2C 1MHZ 8SOIC
Operating Temperature: -20°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Memory Organization: 512 x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-SOIC
Memory Format: EEPROM
Clock Frequency: 1 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 3.6V
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36+0.49 EUR
39+0.46 EUR
100+0.44 EUR
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AT34C04-X5M-B Atmel-8827G-SEEPROM-AT34C04-Datasheet.pdf
AT34C04-X5M-B
Hersteller: Microchip Technology
Description: IC EEPROM 4KBIT I2C 1MHZ 8TSSOP
DigiKey Programmable: Not Verified
Memory Organization: 512 x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-TSSOP
Memory Format: EEPROM
Clock Frequency: 1 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 3.6V
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tube
Operating Temperature: -20°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Kbit
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36+0.49 EUR
39+0.46 EUR
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AT24C01D-MAHM-T AT24C01D-AT24C02D-I2C-Compatible-Two-Wire-Serial-EEPROM-1Kbit-2Kbit-20006100A.pdf
AT24C01D-MAHM-T
Hersteller: Microchip Technology
Description: IC EEPROM 1KBIT I2C 1MHZ 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 4.5 µs
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
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5000+0.36 EUR
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AT24C01D-SSHM-T AT24C01D-AT24C02D-I2C-Compatible-Two-Wire-Serial-EEPROM-1Kbit-2Kbit-20006100A.pdf
AT24C01D-SSHM-T
Hersteller: Microchip Technology
Description: IC EEPROM 1KBIT I2C 1MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 4.5 µs
Memory Organization: 128 x 8
DigiKey Programmable: Verified
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4000+0.29 EUR
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AT24C01D-STUM-T AT24C01D-AT24C02D-I2C-Compatible-Two-Wire-Serial-EEPROM-1Kbit-2Kbit-20006100A.pdf
AT24C01D-STUM-T
Hersteller: Microchip Technology
Description: IC EEPROM 1KBIT I2C 1MHZ SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-5
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 4.5 µs
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
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5000+0.23 EUR
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AT24C01D-XHM-T AT24C01D-AT24C02D-I2C-Compatible-Two-Wire-Serial-EEPROM-1Kbit-2Kbit-20006100A.pdf
AT24C01D-XHM-T
Hersteller: Microchip Technology
Description: IC EEPROM 1KBIT I2C 1MHZ 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 4.5 µs
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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AT24C04D-MAHM-T Atmel-8896E-SEEPROM-AT24C04D-Datasheet.pdf
AT24C04D-MAHM-T
Hersteller: Microchip Technology
Description: IC EEPROM 4KBIT I2C 1MHZ 8UDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
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5000+0.42 EUR
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AT24C04D-SSHM-T Atmel-8896E-SEEPROM-AT24C04D-Datasheet.pdf
AT24C04D-SSHM-T
Hersteller: Microchip Technology
Description: IC EEPROM 4KBIT I2C 1MHZ 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-SOIC
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
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4000+0.36 EUR
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AT24C04D-STUM-T Atmel-8896E-SEEPROM-AT24C04D-Datasheet.pdf
AT24C04D-STUM-T
Hersteller: Microchip Technology
Description: IC EEPROM 4KBIT I2C 1MHZ SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-5
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 512 x 8
DigiKey Programmable: Not Verified
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5000+0.3 EUR
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AT24C04D-XHM-T Atmel-8896E-SEEPROM-AT24C04D-Datasheet.pdf
AT24C04D-XHM-T
Hersteller: Microchip Technology
Description: IC EEPROM 4KBIT I2C 1MHZ 8TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Memory Size: 4Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-TSSOP
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 450 ns
Memory Organization: 512 x 8
DigiKey Programmable: Verified
auf Bestellung 5000 Stücke:
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AnzahlPreis
5000+0.38 EUR
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AT24C32D-MEHM-T AT24C32D-I2C-Compatible-Serial-EEPROM-Data-Sheet-20006047A.pdf
AT24C32D-MEHM-T
Hersteller: Microchip Technology
Description: IC EEPROM 32KBIT I2C 1MHZ 8XDFN
DigiKey Programmable: Not Verified
Memory Organization: 4K x 8
Access Time: 550 ns
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-XDFN (1.8x2.2)
Memory Format: EEPROM
Clock Frequency: 1 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 5.5V
Operating Temperature: -40°C ~ 85°C (TA)
Memory Type: Non-Volatile
Memory Size: 32Kbit
Mounting Type: Surface Mount
Package / Case: 8-XFDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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AT24C32D-STUM-T AT24C32D-I2C-Compatible-Serial-EEPROM-Data-Sheet-20006047A.pdf
AT24C32D-STUM-T
Hersteller: Microchip Technology
Description: IC EEPROM 32KBIT I2C SOT23-5
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Memory Size: 32Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.7V ~ 5.5V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: SOT-23-5
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 550 ns
Memory Organization: 4K x 8
DigiKey Programmable: Not Verified
auf Bestellung 5000 Stücke:
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5000+0.46 EUR
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AT34C04-MA5M-T Atmel-8827G-SEEPROM-AT34C04-Datasheet.pdf
AT34C04-MA5M-T
Hersteller: Microchip Technology
Description: IC EEPROM 4KBIT I2C 1MHZ 8UDFN
DigiKey Programmable: Not Verified
Memory Organization: 512 x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-UDFN (2x3)
Memory Format: EEPROM
Clock Frequency: 1 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 3.6V
Operating Temperature: -20°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Kbit
Mounting Type: Surface Mount
Package / Case: 8-UFDFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
5000+0.48 EUR
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AT34C04-SS5M-T Atmel-8827G-SEEPROM-AT34C04-Datasheet.pdf
AT34C04-SS5M-T
Hersteller: Microchip Technology
Description: IC EEPROM 4KBIT I2C 1MHZ 8SOIC
DigiKey Programmable: Not Verified
Memory Organization: 512 x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-SOIC
Memory Format: EEPROM
Clock Frequency: 1 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 3.6V
Operating Temperature: -20°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Kbit
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 16000 Stücke:
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AnzahlPreis
4000+0.44 EUR
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AT34C04-X5M-T Atmel-8827G-SEEPROM-AT34C04-Datasheet.pdf
AT34C04-X5M-T
Hersteller: Microchip Technology
Description: IC EEPROM 4KBIT I2C 1MHZ 8TSSOP
Mounting Type: Surface Mount
Package / Case: 8-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
DigiKey Programmable: Not Verified
Memory Organization: 512 x 8
Memory Interface: I2C
Write Cycle Time - Word, Page: 5ms
Supplier Device Package: 8-TSSOP
Memory Format: EEPROM
Clock Frequency: 1 MHz
Technology: EEPROM
Voltage - Supply: 1.7V ~ 3.6V
Operating Temperature: -20°C ~ 125°C (TA)
Memory Type: Non-Volatile
Memory Size: 4Kbit
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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AT24C01D-MAHM-T AT24C01D-AT24C02D-I2C-Compatible-Two-Wire-Serial-EEPROM-1Kbit-2Kbit-20006100A.pdf
AT24C01D-MAHM-T
Hersteller: Microchip Technology
Description: IC EEPROM 1KBIT I2C 1MHZ 8UDFN
Packaging: Cut Tape (CT)
Package / Case: 8-UFDFN Exposed Pad
Mounting Type: Surface Mount
Memory Size: 1Kbit
Memory Type: Non-Volatile
Operating Temperature: -40°C ~ 85°C (TC)
Voltage - Supply: 1.7V ~ 3.6V
Technology: EEPROM
Clock Frequency: 1 MHz
Memory Format: EEPROM
Supplier Device Package: 8-UDFN (2x3)
Part Status: Active
Write Cycle Time - Word, Page: 5ms
Memory Interface: I2C
Access Time: 4.5 µs
Memory Organization: 128 x 8
DigiKey Programmable: Not Verified
auf Bestellung 5239 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
46+0.39 EUR
Mindestbestellmenge: 46 Stücke
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