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TSM60NB260CI C0GTaiwan SemiconductorMOSFET 600V, 13A, Single N-Channel Power MOSFET
auf Bestellung 2065 Stücke:
Lieferzeit 10-14 Tag (e)
1+14.66 EUR
10+13.26 EUR
100+10.97 EUR
500+9.56 EUR
1000+8.33 EUR
2000+8.02 EUR
4000+7.9 EUR
Im Einkaufswagen  Stück im Wert von  UAH
TSM60NB260CI C0GTaiwan SemiconductorTrans MOSFET N-CH 600V 13A 3-Pin(3+Tab) ITO-220 Tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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TSM60NB380CFTaiwan Semiconductor CorporationDescription: 600V, 11A, SINGLE N-CHANNEL POWE
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 2.7A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: ITO-220S
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 100 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
TSM60NB380CF C0GTaiwan SemiconductorTrans MOSFET N-CH 600V 11A 3-Pin(3+Tab) ITO-220S Tube
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
269+0.64 EUR
Mindestbestellmenge: 269 Stücke
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TSM60NB380CF C0GTaiwan Semiconductor CorporationDescription: MOSFET N-CH 600V 11A ITO220S
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ITO-220S
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 2.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 100 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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TSM60NB380CF C0GTaiwan SemiconductorTrans MOSFET N-CH 600V 11A 3-Pin(3+Tab) ITO-220S Tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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TSM60NB380CF C0GTaiwan SemiconductorMOSFET 600V, 11A, Single N-Channel Power MOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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TSM60NB380CHTaiwan Semiconductor CorporationDescription: 600V, 9.5A, SINGLE N-CHANNEL POW
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 2.85A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 795 pF @ 100 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 15000 Stücke
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TSM60NB380CH C5GTaiwan SemiconductorTrans MOSFET N-CH 600V 9.5A 3-Pin(3+Tab) IPAK Tube
auf Bestellung 1875 Stücke:
Lieferzeit 14-21 Tag (e)
174+1 EUR
Mindestbestellmenge: 174 Stücke
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TSM60NB380CH C5GTaiwan SemiconductorMOSFET 600V, 9.5A, Single N-Channel Power MOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 15000 Stücke
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TSM60NB380CH C5GTaiwan Semiconductor CorporationDescription: MOSFET N-CH 600V 9.5A TO251
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -50°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 2.85A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 795 pF @ 100 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 15000 Stücke
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TSM60NB380CH C5GTaiwan SemiconductorTrans MOSFET N-CH 600V 9.5A 3-Pin(3+Tab) IPAK Tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 15000 Stücke
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TSM60NB380CPTaiwan Semiconductor CorporationDescription: 600V, 9.5A, SINGLE N-CHANNEL POW
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 2.85A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 795 pF @ 100 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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TSM60NB380CP ROGTaiwan Semiconductor CorporationDescription: MOSFET N-CH 600V 9.5A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 2.85A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 795 pF @ 100 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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TSM60NB380CP ROGTAIWAN SEMICONDUCTORCategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 6A; 83W; DPAK
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 6A
Power dissipation: 83W
Case: DPAK
Gate-source voltage: ±30V
On-state resistance: 0.38Ω
Mounting: SMD
Gate charge: 19.4nC
Kind of package: tape
Kind of channel: enhancement
auf Bestellung 73 Stücke:
Lieferzeit 14-21 Tag (e)
32+2.69 EUR
35+2.43 EUR
40+2.14 EUR
Mindestbestellmenge: 32 Stücke
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TSM60NB380CP ROGTaiwan SemiconductorMOSFET 600V, 9.5A, Single N-Channel Power MOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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TSM60NB380CP ROGTaiwan Semiconductor CorporationDescription: MOSFET N-CH 600V 9.5A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 2.85A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 19.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 795 pF @ 100 V
auf Bestellung 392 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.65 EUR
10+3.84 EUR
100+3.06 EUR
Mindestbestellmenge: 5 Stücke
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TSM60NB600CF C0GTaiwan SemiconductorTrans MOSFET N-CH 600V 8A 3-Pin(3+Tab) ITO-220S Tube
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)
309+0.56 EUR
Mindestbestellmenge: 309 Stücke
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TSM60NB600CF C0GTaiwan Semiconductor CorporationDescription: MOSFET N-CH 600V 8A ITO220S
auf Bestellung 3582 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.69 EUR
10+6.89 EUR
100+5.65 EUR
500+4.81 EUR
1000+4.06 EUR
2000+3.95 EUR
Mindestbestellmenge: 3 Stücke
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TSM60NB600CF C0GTaiwan SemiconductorTrans MOSFET N-CH 600V 8A 3-Pin(3+Tab) ITO-220S Tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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TSM60NB600CF C0GTaiwan SemiconductorMOSFET MOSFET, Single, N-Ch SJ G2, 600V, 8A
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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TSM60NB600CH C5GTaiwan SemiconductorTrans MOSFET N-CH 600V 7A 3-Pin(3+Tab) IPAK Tube
auf Bestellung 3747 Stücke:
Lieferzeit 14-21 Tag (e)
373+0.46 EUR
Mindestbestellmenge: 373 Stücke
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TSM60NB600CH C5GTaiwan SemiconductorMOSFET 600V, 7A, 0,6OHMS N channel Mosfet
Produkt ist nicht verfügbar
 Mindestbestellmenge: 15000 Stücke
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TSM60NB600CP ROGTaiwan Semiconductor CorporationDescription: MOSFET N-CHANNEL 600V 7A TO252
auf Bestellung 4999 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.1 EUR
10+6.37 EUR
100+5.21 EUR
500+4.44 EUR
1000+3.75 EUR
Mindestbestellmenge: 3 Stücke
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TSM60NB600CP ROGTaiwan SemiconductorTrans MOSFET N-CH 600V 7A 3-Pin(2+Tab) DPAK T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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TSM60NB600CP ROGTaiwan Semiconductor CorporationDescription: MOSFET N-CHANNEL 600V 7A TO252
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+3.64 EUR
Mindestbestellmenge: 2500 Stücke
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TSM60NB600CP ROGTaiwan SemiconductorTrans MOSFET N-CH 600V 7A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
64+2.74 EUR
66+2.45 EUR
100+2.34 EUR
250+2.25 EUR
500+2.14 EUR
1000+2.03 EUR
3000+2.02 EUR
Mindestbestellmenge: 64 Stücke
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TSM60NB600CP ROGTaiwan SemiconductorMOSFET 600V, 7A, 0.6OHMS N Channel Power Mosfet
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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TSM60NB900CHTaiwan Semiconductor CorporationDescription: 600V, 4A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-251 (IPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 36.8W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
Produkt ist nicht verfügbar
 Mindestbestellmenge: 15000 Stücke
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TSM60NB900CH C5GTaiwan SemiconductorTSM60NB900CH C5G Taiwan Semiconductor MOSFETs Transistor N-CH 600V 4A 3-Pin(3+Tab) IPAK Tube - Arrow.com
auf Bestellung 14995 Stücke:
Lieferzeit 14-21 Tag (e)
67+2.63 EUR
75+2.25 EUR
100+1.83 EUR
Mindestbestellmenge: 67 Stücke
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TSM60NB900CH C5GTaiwan SemiconductorMOSFET 600V 4Amp 0.9OHMS N channel Power Mosfet
Produkt ist nicht verfügbar
 Mindestbestellmenge: 15000 Stücke
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TSM60NB900CH C5GTaiwan Semiconductor CorporationDescription: MOSFET N-CHANNEL 600V 4A TO251
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251 (IPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 36.8W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
auf Bestellung 49 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.92 EUR
Mindestbestellmenge: 6 Stücke
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TSM60NB900CPTaiwan Semiconductor CorporationDescription: 600V, 4A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 36.8W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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TSM60NB900CP ROGTaiwan SemiconductorMOSFET 600V 4Amp 0.9OHMS N channel Power Mosfet
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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TSM60NB900CP ROGTaiwan Semiconductor CorporationDescription: MOSFET N-CHANNEL 600V 4A TO252
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 36.8W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 1975 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.92 EUR
10+2.5 EUR
100+1.7 EUR
500+1.36 EUR
1000+1.24 EUR
Mindestbestellmenge: 6 Stücke
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TSM60NB900CP ROGTaiwan Semiconductor CorporationDescription: MOSFET N-CHANNEL 600V 4A TO252
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 9.6 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 36.8W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 1.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
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TSM60NBI190CI C0GTaiwan SemiconductorMOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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TSM60NC165CITaiwan Semiconductor CorporationDescription: 600V, 24A, SINGLE N-CHANNEL POWE
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: ITO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1857 pF @ 300 V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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TSM60NC165CI C0GTaiwan SemiconductorLDO Voltage Regulators 600V, 24A, Single N-Channel Power MOSFET
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
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TSM60NC165CI C0GTaiwan Semiconductor CorporationDescription: 600V, 24A, SINGLE N-CHANNEL POWE
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 11.3A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: ITO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1857 pF @ 300 V
auf Bestellung 3989 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.3 EUR
10+4.46 EUR
100+3.61 EUR
500+3.52 EUR
Mindestbestellmenge: 4 Stücke
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TSM60NC196CF C0GTaiwan SemiconductorMOSFETs 600V, 12A, Single N-Channel High Voltage MOSFETs
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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TSM60NC196CI C0GTaiwan Semiconductor CorporationDescription: 600V, 20A, SINGLE N-CHANNEL POWE
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Power Dissipation (Max): 70W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: ITO-220
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1535 pF @ 300 V
auf Bestellung 3766 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.97 EUR
10+4.59 EUR
100+3.26 EUR
500+2.89 EUR
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TSM60NC196CIT C0GTaiwan SemiconductorMOSFETs 600V, 12A, Single N-Channel High Voltage MOSFETs
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2000 Stücke
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TSM60NC196CM2 RNGTaiwan Semiconductor CorporationDescription: 600V, 28A, SINGLE N-CHANNEL POWE
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263AB (D2PAK)
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 152W (Tc)
auf Bestellung 2397 Stücke:
Lieferzeit 10-14 Tag (e)
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TSM60NC196CM2 RNGTaiwan Semiconductor CorporationDescription: 600V, 28A, SINGLE N-CHANNEL POWE
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263AB (D2PAK)
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 152W (Tc)
Rds On (Max) @ Id, Vgs: 196mOhm @ 9.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
800+3.99 EUR
1600+3.42 EUR
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TSM60NC1R5CH C5GTaiwan Semiconductor CorporationDescription: 600V, 3A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 242 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 7.6 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-251 (IPAK)
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 39W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Packaging: Tube
auf Bestellung 14990 Stücke:
Lieferzeit 10-14 Tag (e)
14+1.51 EUR
75+1.2 EUR
150+0.95 EUR
525+0.81 EUR
1050+0.8 EUR
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TSM60NC1R5CP ROGTaiwan SemiconductorMOSFET 600V, 3A, Single N-Channel Power MOSFET
auf Bestellung 4995 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.78 EUR
10+5.21 EUR
100+4.19 EUR
500+3.45 EUR
1000+2.84 EUR
2500+2.67 EUR
5000+2.57 EUR
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TSM60NC1R5CP ROGTaiwan Semiconductor CorporationDescription: 600V, 3A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 242 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Power Dissipation (Max): 55W (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 10355 Stücke:
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10+2.12 EUR
13+1.75 EUR
100+1.36 EUR
500+1.15 EUR
1000+0.94 EUR
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TSM60NC1R5CP ROGTaiwan Semiconductor CorporationDescription: 600V, 3A, SINGLE N-CHANNEL POWER
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 3A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 242 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8.1 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 5.5V @ 1mA
Power Dissipation (Max): 55W (Tc)
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.88 EUR
5000+0.84 EUR
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TSM60NC390CH C5GTaiwan SemiconductorMOSFETs 600V, 11A, Single N-Channel Power MOSFET
auf Bestellung 3689 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.12 EUR
10+3.97 EUR
100+2.76 EUR
500+2.26 EUR
1000+2.07 EUR
2500+2.03 EUR
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TSM60NC390CH C5GTaiwan Semiconductor CorporationDescription: 600V, 11A, SINGLE N-CHANNEL POWE
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 21.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 818 pF @ 100 V
auf Bestellung 12981 Stücke:
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6+4.05 EUR
75+1.93 EUR
150+1.84 EUR
525+1.77 EUR
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TSM60NC390CI C0GTaiwan SemiconductorMOSFETs 600V, 11A, Single N-Channel Power MOSFET
auf Bestellung 3990 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.43 EUR
10+2.12 EUR
100+2.07 EUR
500+2.06 EUR
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TSM60NC390CI C0GTaiwan Semiconductor CorporationDescription: 600V, 11A, SINGLE N-CHANNEL POWE
Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack, Isolated Tab
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 832 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 21.3 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: ITO-220
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 78W (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TSM60NC390CP ROGTaiwan Semiconductor CorporationDescription: 600V, 11A, SINGLE N-CHANNEL POWE
Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2500 Stücke
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TSM60NC390CP ROGTaiwan SemiconductorMOSFETs 600V, 11A, Single N-Channel Power MOSFET
auf Bestellung 4775 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.12 EUR
10+3.97 EUR
100+2.76 EUR
500+2.26 EUR
1000+2.2 EUR
2500+2.05 EUR
10000+2.03 EUR
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TSM60NC390CP ROGTaiwan Semiconductor CorporationDescription: 600V, 11A, SINGLE N-CHANNEL POWE
Input Capacitance (Ciss) (Max) @ Vds: 804 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 125W (Tc)
Rds On (Max) @ Id, Vgs: 390mOhm @ 3.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
TSM60NC620CH C5GTaiwan Semiconductor CorporationDescription: 600V, 7A, SINGLE N-CHANNEL POWER
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-251 (IPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 501 pF @ 300 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.01 EUR
10+2.5 EUR
100+1.99 EUR
500+1.68 EUR
1000+1.43 EUR
2000+1.36 EUR
5000+1.31 EUR
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TSM60NC620CI C0GTaiwan SemiconductorMOSFET 600V, 7A, Single N-Channel Power MOSFET
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.72 EUR
10+3.09 EUR
100+2.48 EUR
250+2.28 EUR
500+2.07 EUR
1000+1.87 EUR
2000+1.62 EUR
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TSM60NC620CI C0GTaiwan Semiconductor CorporationDescription: 600V, 7A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 506 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: ITO-220
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 46W (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
auf Bestellung 3990 Stücke:
Lieferzeit 10-14 Tag (e)
5+5.15 EUR
10+3.32 EUR
100+2.28 EUR
500+1.84 EUR
1000+1.7 EUR
2000+1.57 EUR
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TSM60NC620CP ROGTaiwan SemiconductorMOSFETs 600V, 7A, Single N-Channel Power MOSFET
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.61 EUR
10+2.98 EUR
100+2.03 EUR
500+1.62 EUR
1000+1.49 EUR
2500+1.39 EUR
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TSM60NC620CP ROGTaiwan Semiconductor CorporationDescription: 600V, 7A, SINGLE N-CHANNEL POWER
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 498 pF @ 300 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.32 EUR
5000+1.26 EUR
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TSM60NC620CP ROGTaiwan Semiconductor CorporationDescription: 600V, 7A, SINGLE N-CHANNEL POWER
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 2.4A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-252 (DPAK)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 498 pF @ 300 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.52 EUR
10+2.9 EUR
100+1.99 EUR
500+1.58 EUR
1000+1.46 EUR
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TSM60NC980CH C5GTaiwan Semiconductor CorporationDescription: 600V, 4A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Packaging: Tube
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-251 (IPAK)
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 57W (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
auf Bestellung 13114 Stücke:
Lieferzeit 10-14 Tag (e)
7+3.12 EUR
11+1.99 EUR
100+1.34 EUR
500+1.06 EUR
1000+0.98 EUR
2000+0.94 EUR
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TSM60NC980CH C5GTaiwan SemiconductorMOSFET 600V, 4A, Single N-Channel Power MOSFET
auf Bestellung 3750 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.57 EUR
10+2.12 EUR
100+1.65 EUR
500+1.4 EUR
1000+1.14 EUR
2500+1.07 EUR
3750+1.02 EUR
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TSM60NC980CP ROGTaiwan Semiconductor CorporationDescription: 600V, 4A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 57W (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.02 EUR
5000+0.96 EUR
Mindestbestellmenge: 2500 Stücke
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TSM60NC980CP ROGTaiwan SemiconductorMOSFETs 600V, 4A, Single N-Channel Power MOSFET
auf Bestellung 4477 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.72 EUR
10+2.39 EUR
100+1.61 EUR
500+1.27 EUR
1000+1.17 EUR
2500+1.05 EUR
5000+1.04 EUR
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TSM60NC980CP ROGTaiwan Semiconductor CorporationDescription: 600V, 4A, SINGLE N-CHANNEL POWER
Input Capacitance (Ciss) (Max) @ Vds: 330 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 57W (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.67 EUR
10+2.33 EUR
100+1.57 EUR
500+1.25 EUR
1000+1.14 EUR
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TSM60NE048PW C0GTaiwan Semiconductor CorporationDescription: MOSFET
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 61A (Tc)
Rds On (Max) @ Id, Vgs: 44mOhm @ 20A, 12V
Power Dissipation (Max): 431W (Tc)
Vgs(th) (Max) @ Id: 6V @ 4.6mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 114 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5023 pF @ 300 V
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
1+23.87 EUR
10+21.03 EUR
300+17.61 EUR
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TSM60NE048PW C0GTaiwan SemiconductorMOSFETs 600V, 61A, Single N-Channel High Voltage MOSFETs
auf Bestellung 300 Stücke:
Lieferzeit 10-14 Tag (e)
1+25.24 EUR
10+22.22 EUR
25+21.63 EUR
50+20.42 EUR
100+19.23 EUR
300+18.62 EUR
600+17.41 EUR
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TSM60NE069CIT C0GTaiwan SemiconductorTrans MOSFET N-CH 600V 24A 3-Pin(3+Tab) ITO-220TL
Produkt ist nicht verfügbar
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TSM60NE069CIT C0GTaiwan SemiconductorMOSFETs 600V, 24A, Single N-Channel High Voltage MOSFETs
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TSM60NE069CIT C0GTAIWAN SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 24A; 89W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 24A
Power dissipation: 89W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 89nC
Kind of package: tube
Kind of channel: enhancement
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TSM60NE069CIT C0GTaiwan SemiconductorTrans MOSFET N-CH 600V 24A 3-Pin(3+Tab) ITO-220TL
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TSM60NE069CIT C0GTaiwan Semiconductor CorporationDescription: 600V, 24A, SINGLE N-CHANNEL HIGH
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 8A, 12V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 6V @ 3.5mA
Supplier Device Package: ITO-220TL
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 89 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3551 pF @ 300 V
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TSM60NE069CIT C0GTaiwan SemiconductorTrans MOSFET N-CH 600V 24A 3-Pin(3+Tab) ITO-220TL
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TSM60NE069PW C0GTaiwan SemiconductorMOSFETs 600V, 51A, Single N-Channel High Voltage MOSFETs
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TSM60NE069PW C0GTaiwan SemiconductorTrans MOSFET N-CH 600V 51A 3-Pin(3+Tab) TO-247
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TSM60NE069PW C0GTAIWAN SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 51A; 417W; TO247
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 51A
Power dissipation: 417W
Case: TO247
Gate-source voltage: ±30V
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 86nC
Kind of package: tube
Kind of channel: enhancement
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TSM60NE069PW C0GTaiwan Semiconductor CorporationDescription: 600V, 51A, SINGLE N-CHANNEL HIGH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 17A, 12V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 6V @ 3.5mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3566 pF @ 300 V
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TSM60NE069PW C0GTaiwan SemiconductorTrans MOSFET N-CH 600V 51A 3-Pin(3+Tab) TO-247
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TSM60NE084CIT C0GTaiwan Semiconductor CorporationDescription: 600V, 21A, SINGLE N-CHANNEL HIGH
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
Rds On (Max) @ Id, Vgs: 82mOhm @ 7A, 12V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 6V @ 2.9mA
Supplier Device Package: ITO-220TL
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2930 pF @ 300 V
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TSM60NE084CIT C0GTAIWAN SEMICONDUCTORCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 21A; 83W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 21A
Power dissipation: 83W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 84mΩ
Mounting: THT
Gate charge: 69nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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TSM60NE084PW C0GTaiwan Semiconductor CorporationDescription: 600V, 42A, SINGLE N-CHANNEL HIGH
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 80mOhm @ 14A, 12V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 6V @ 2.9mA
Supplier Device Package: TO-247
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 68 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2939 pF @ 300 V
auf Bestellung 300 Stücke:
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TSM60NE110CE RVGTaiwan Semiconductor CorporationDescription: 600V, 27A, SINGLE N-CHANNEL HIGH
Input Capacitance (Ciss) (Max) @ Vds: 2306 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Supplier Device Package: 8-PDFN (8x8)
Vgs(th) (Max) @ Id: 6V @ 2.5mA
Power Dissipation (Max): 178W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 9A, 12V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
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TSM60NE110CE RVGTaiwan SemiconductorMOSFETs 600V, 27A, Single N-Channel High Voltage MOSFETs, PDFN88
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TSM60NE110CE RVGTaiwan Semiconductor CorporationDescription: 600V, 27A, SINGLE N-CHANNEL HIGH
Input Capacitance (Ciss) (Max) @ Vds: 2306 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Supplier Device Package: 8-PDFN (8x8)
Vgs(th) (Max) @ Id: 6V @ 2.5mA
Power Dissipation (Max): 178W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 9A, 12V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Cut Tape (CT)
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TSM60NE110CIT C0GTaiwan SemiconductorMOSFET 600V, 17A, Single N-Channel High Voltage MOSFETs
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TSM60NE110CIT C0GTaiwan Semiconductor CorporationDescription: 600V, 17A, SINGLE N-CHANNEL HIGH
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 5.6A, 12V
Power Dissipation (Max): 73W (Tc)
Vgs(th) (Max) @ Id: 6V @ 2.5mA
Supplier Device Package: ITO-220TL
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 300 V
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TSM60NE110TL RAGTaiwan Semiconductor CorporationDescription: 600V, 30A, SINGLE N-CHANNEL HIGH
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 12V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 6V @ 2.5mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 300 V
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TSM60NE110TL RAGTaiwan Semiconductor CorporationDescription: 600V, 30A, SINGLE N-CHANNEL HIGH
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 10A, 12V
Power Dissipation (Max): 231W (Tc)
Vgs(th) (Max) @ Id: 6V @ 2.5mA
Supplier Device Package: TOLL
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 300 V
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2+11.73 EUR
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TSM60NE145CIT C0GTaiwan Semiconductor CorporationDescription: MOSFET
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Tc)
Rds On (Max) @ Id, Vgs: 135mOhm @ 4.8A, 12V
Power Dissipation (Max): 69W (Tc)
Vgs(th) (Max) @ Id: 6V @ 2mA
Supplier Device Package: ITO-220TL
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1661 pF @ 300 V
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3+8.9 EUR
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100+6.05 EUR
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TSM60NE180CE RVGTaiwan Semiconductor CorporationDescription: 600V, 20A, SINGLE N-CHANNEL HIGH
Input Capacitance (Ciss) (Max) @ Vds: 1405 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Supplier Device Package: 8-PDFN (8x8)
Vgs(th) (Max) @ Id: 6V @ 1.8mA
Power Dissipation (Max): 169W (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 6.6A, 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Cut Tape (CT)
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TSM60NE180CE RVGTaiwan Semiconductor CorporationDescription: 600V, 20A, SINGLE N-CHANNEL HIGH
Input Capacitance (Ciss) (Max) @ Vds: 1405 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Supplier Device Package: 8-PDFN (8x8)
Vgs(th) (Max) @ Id: 6V @ 1.8mA
Power Dissipation (Max): 169W (Tc)
Rds On (Max) @ Id, Vgs: 175mOhm @ 6.6A, 12V
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
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TSM60NE180CE RVGTaiwan SemiconductorMOSFETs 600V, 20A, Single N-Channel High Voltage MOSFETs, PDFN88
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TSM60NE180CIT C0GTaiwan SemiconductorMOSFETs 600V, 13A, Single N-Channel High Voltage MOSFETs
auf Bestellung 1988 Stücke:
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TSM60NE180CIT C0GTaiwan Semiconductor CorporationDescription: 600V, 13A, SINGLE N-CHANNEL HIGH
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Tc)
Rds On (Max) @ Id, Vgs: 165mOhm @ 4.3A, 12V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 6V @ 1.8mA
Supplier Device Package: ITO-220TL
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1417 pF @ 300 V
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500+3.59 EUR
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TSM60NE200CIT C0GTaiwan SemiconductorMOSFETs 600V, 12A, Single N-Channel High Voltage MOSFETs
auf Bestellung 1984 Stücke:
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1+8.84 EUR
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100+4.57 EUR
500+4.06 EUR
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2000+3.27 EUR
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TSM60NE200CIT C0GTaiwan Semiconductor CorporationDescription: MOSFET
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 4A, 12V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 6V @ 1.65mA
Supplier Device Package: ITO-220TL
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1238 pF @ 300 V
auf Bestellung 2000 Stücke:
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3+7.28 EUR
10+4.83 EUR
100+3.44 EUR
500+3.11 EUR
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TSM60NE285CE RVGTaiwan Semiconductor CorporationDescription: 600V, 16A, SINGLE N-CHANNEL HIGH
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-VDFN Exposed Pad
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 874 pF @ 300 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Supplier Device Package: 8-PDFN (8x8)
Vgs(th) (Max) @ Id: 6V @ 1.4mA
Power Dissipation (Max): 164W (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.3A, 12V
Produkt ist nicht verfügbar
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TSM60NE285CE RVGTaiwan SemiconductorMOSFETs 600V, 16A, Single N-Channel High Voltage MOSFETs, PDFN88
Produkt ist nicht verfügbar
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