Produkte > DMT
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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| DMTH6009LK3-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 41V-60 | auf Bestellung 2136 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6009LK3-13 | Diodes Incorporated | Description: MOSFET N-CH 60V 14.2A/59A TO252 Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: TO-252-3 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3.2W (Ta), 60W (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta), 59A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) | auf Bestellung 17500 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6009LK3Q-13 | Diodes Zetex | Trans MOSFET N-CH 60V 14.2A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 | auf Bestellung 182500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMTH6009LK3Q-13 | Diodes Incorporated | MOSFETs N-Ch Enh Mode Fet 60Vdss 20Vgss 60W | auf Bestellung 10861 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6009LK3Q-13 | DIODES INC. | Description: DIODES INC. - DMTH6009LK3Q-13 - Leistungs-MOSFET, n-Kanal, 60 V, 59 A, 0.0083 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 59A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.4V euEccn: NLR Verlustleistung: 3.2W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0083ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 2218 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMTH6009LK3Q-13 | Diodes Zetex | Trans MOSFET N-CH 60V 14.2A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 | auf Bestellung 57500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMTH6009LK3Q-13 | Diodes Incorporated | Description: MOSFET N-CH 60V 14.2A/59A TO252 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-252-3 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3.2W (Ta), 60W (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta), 59A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) | auf Bestellung 63979 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6009LK3Q-13 | Diodes Zetex | Trans MOSFET N-CH 60V 14.2A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH6009LK3Q-13 | DIODES INC. | Description: DIODES INC. - DMTH6009LK3Q-13 - Leistungs-MOSFET, n-Kanal, 60 V, 59 A, 0.0083 ohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 59A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.4V euEccn: NLR Verlustleistung: 3.2W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0083ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 2218 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMTH6009LK3Q-13 | Diodes Zetex | Trans MOSFET N-CH 60V 14.2A 3-Pin(2+Tab) DPAK T/R Automotive AEC-Q101 | auf Bestellung 182500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMTH6009LK3Q-13 | Diodes Incorporated | Description: MOSFET N-CH 60V 14.2A/59A TO252 Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V Current - Continuous Drain (Id) @ 25°C: 14.2A (Ta), 59A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: TO-252-3 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3.2W (Ta), 60W (Tc) | auf Bestellung 62500 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6009LPS-13 | DIODES INC. | Description: DIODES INC. - DMTH6009LPS-13 - Leistungs-MOSFET, n-Kanal, 60 V, 89.5 A, 7200 µohm, PowerDI 5060, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 89.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 136W Bauform - Transistor: PowerDI 5060 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 7200µohm SVHC: Lead (25-Jun-2025) | auf Bestellung 2299 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMTH6009LPS-13 | Diodes Zetex | Trans MOSFET N-CH 60V 11.76A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH6009LPS-13 | Diodes Incorporated | Description: MOSFET N-CH 60V PWRDI5060 Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 4.5 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Grade: Automotive Supplier Device Package: PowerDI5060-8 Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 2.8W (Ta), 136W (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 11.76A (Ta), 89.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) | auf Bestellung 320000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6009LPS-13 | Diodes Zetex | Trans MOSFET N-CH 60V 11.76A 8-Pin PowerDI EP T/R | auf Bestellung 1562 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMTH6009LPS-13 | Diodes Zetex | Trans MOSFET N-CH 60V 11.76A 8-Pin PowerDI EP T/R | auf Bestellung 1562 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMTH6009LPS-13 | DIODES INC. | Description: DIODES INC. - DMTH6009LPS-13 - Leistungs-MOSFET, n-Kanal, 60 V, 89.5 A, 7200 µohm, PowerDI 5060, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 89.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 136W Bauform - Transistor: PowerDI 5060 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 7200µohm SVHC: Lead (27-Jun-2024) | auf Bestellung 2309 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMTH6009LPS-13 | Diodes Incorporated | Description: MOSFET N-CH 60V PWRDI5060 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.76A (Ta), 89.5A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 20A, 10V Power Dissipation (Max): 2.8W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1925 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 320177 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6009LPS-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 41V-60V | auf Bestellung 4736 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6009LPS-13 | Diodes Zetex | Trans MOSFET N-CH 60V 11.76A 8-Pin PowerDI EP T/R | auf Bestellung 320000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMTH6009LPSQ-13 | Diodes Incorporated | Description: MOSFET N-CH 60V PWRDI5060 | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH6009SPS-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH6010LK3-13 | Diodes Incorporated | MOSFETs 60V 175c N-Ch FET 20Vgss 2.6W 2090pF | auf Bestellung 2498 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6010LK3-13 | Diodes | Trans MOSFET N-CH 60V 14.8A DPAK Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH6010LK3-13 | Diodes Incorporated | Description: MOSFET N-CH 60V 14.8A/70A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V | auf Bestellung 112494 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6010LK3-13 | Diodes Incorporated | Description: MOSFET N-CH 60V 14.8A/70A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V | auf Bestellung 110000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6010LK3Q-13 | Diodes Incorporated | Description: MOSFET N-CH 60V 14.8A TO252 | auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH6010LK3Q-13 | Diodes Incorporated | MOSFETs 60V 175c N-Ch FET 8mOhm 10Vgs 70A | auf Bestellung 1502 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6010LK3Q-13 | Diodes Incorporated | Description: MOSFET N-CH 60V 14.8A TO252 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH6010LPD-13 | DIODES INC. | Description: DIODES INC. - DMTH6010LPD-13 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 47.6 A, 47.6 A, 0.011 ohm tariffCode: 85412900 euEccn: NLR rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 47.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 60V MSL: MSL 1 - unbegrenzt Dauer-Drainstrom Id, n-Kanal: 47.6A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: 2.8W Drain-Source-Spannung Vds, n-Kanal: 60V SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: PowerDI5060 Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.011ohm productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 2.8W Betriebstemperatur, max.: 175°C | auf Bestellung 159 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMTH6010LPD-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 41V-60V | auf Bestellung 166 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6010LPD-13 | Diodes Zetex | Trans MOSFET N-CH 60V 13.1A 8-Pin PowerDI EP T/R | auf Bestellung 120 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMTH6010LPD-13 | Diodes Incorporated | Description: MOSFET 2N-CH 60V 13.1A PWRDI50 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.8W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 13.1A (Ta), 47.6A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2615pF @ 30V Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 40.2nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6010LPD-13 | Diodes Zetex | Trans MOSFET N-CH 60V 13.1A 8-Pin PowerDI EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH6010LPD-13 | DIODES INC. | Description: DIODES INC. - DMTH6010LPD-13 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 47.6 A, 47.6 A, 0.0085 ohm tariffCode: 85412900 Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 47.6A Dauer-Drainstrom Id, p-Kanal: 47.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 Drain-Source-Spannung Vds, p-Kanal: 60V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 47.6A Drain-Source-Durchgangswiderstand, p-Kanal: 0.0085ohm Verlustleistung, p-Kanal: 2.8W Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: PowerDI5060 Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.0085ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 2.8W Betriebstemperatur, max.: 175°C SVHC: No SVHC (27-Jun-2024) | auf Bestellung 1796 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMTH6010LPD-13 | Diodes Incorporated | Description: MOSFET 2N-CH 60V 13.1A PWRDI50 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.8W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 13.1A (Ta), 47.6A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2615pF @ 30V Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 40.2nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 8518 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6010LPDQ-13 | DIODES INC. | Description: DIODES INC. - DMTH6010LPDQ-13 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 47.6 A, 47.6 A, 0.011 ohm tariffCode: 85411000 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 47.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N Drain-Source-Spannung Vds, p-Kanal: 60V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 47.6A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: 2.8W Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: PowerDI5060 Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.011ohm productTraceability: No Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 2.8W Betriebstemperatur, max.: 175°C SVHC: No SVHC (27-Jun-2024) | auf Bestellung 2299 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMTH6010LPDQ-13 | Diodes Zetex | Trans MOSFET N-CH 60V 13.1A 8-Pin PowerDI EP T/R Automotive AEC-Q101 | auf Bestellung 1307500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMTH6010LPDQ-13 | Diodes Incorporated | Description: MOSFET 2N-CH 60V 13.1A PWRDI50 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.8W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 13.1A (Ta), 47.6A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2615pF @ 30V Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 40.2nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 5206 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6010LPDQ-13 | DIODES INC. | Description: DIODES INC. - DMTH6010LPDQ-13 - Dual-MOSFET, n-Kanal, 60 V, 60 V, 47.6 A, 47.6 A, 0.011 ohm tariffCode: 85411000 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 47.6A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 60V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 47.6A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: 2.8W Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: PowerDI5060 Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.011ohm productTraceability: No Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 2.8W Betriebstemperatur, max.: 175°C SVHC: No SVHC (27-Jun-2024) | auf Bestellung 2299 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMTH6010LPDQ-13 | Diodes Zetex | Trans MOSFET N-CH 60V 13.1A 8-Pin PowerDI EP T/R Automotive AEC-Q101 | auf Bestellung 145 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMTH6010LPDQ-13 | Diodes Incorporated | Description: MOSFET 2N-CH 60V 13.1A PWRDI50 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.8W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 13.1A (Ta), 47.6A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2615pF @ 30V Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 40.2nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6010LPDQ-13 | Diodes Zetex | Trans MOSFET N-CH 60V 13.1A 8-Pin PowerDI EP T/R Automotive AEC-Q101 | auf Bestellung 145 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMTH6010LPDQ-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 41V-60V | auf Bestellung 1418 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6010LPDQ-13 | Diodes Zetex | Trans MOSFET N-CH 60V 13.1A 8-Pin PowerDI EP T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH6010LPDW-13 | Diodes Incorporated | Description: MOSFET 2N-CH 60V 13.1A PWRDI50 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.8W (Ta), 37.5W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 13.1A (Ta), 47.6A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2615pF @ 30V Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 40.2nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UXD) | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH6010LPDWQ-13 | Diodes Incorporated | Description: MOSFET 2N-CH 60V 13.1A PWRDI50 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.8W (Ta), 37.5W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 13.1A (Ta), 47.6A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2615pF @ 30V Rds On (Max) @ Id, Vgs: 11mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 40.2nC @ 10V Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UXD) Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH6010LPS-13 | Diodes Incorporated | Description: MOSFET N-CH 60V 13.5A | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH6010LPS-13 | Diodes Zetex | Trans MOSFET N-CH 60V 13.5A 8-Pin PowerDI 5060 T/R | auf Bestellung 7500 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMTH6010LPS-13 | Diodes Incorporated | Description: MOSFET N-CH 60V 13.5A | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH6010LPS-13 | Diodes Incorporated | MOSFETs 60V 175c N-Ch FET 20Vgss 2.6W 2090pF | auf Bestellung 2488 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6010LPS-13 | Diodes | Trans MOSFET N-CH 60V 13.5A Automotive 8-Pin PowerDI 5060 Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH6010LPS-13 | Diodes Zetex | Trans MOSFET N-CH 60V 13.5A 8-Pin PowerDI 5060 T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH6010LPS-13 | Diodes Incorporated | Description: MOSFET N-CH 60V 13.5A | auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH6010LPSQ-13 | Diodes Incorporated | MOSFETs 60V 175c N-Ch FET 8mOhm 10Vgs 100A | auf Bestellung 2745 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6010LPSQ-13 | DIODES INC. | Description: DIODES INC. - DMTH6010LPSQ-13 - Leistungs-MOSFET, n-Kanal, 60 V, 100 A, 6400 µohm, PowerDI 5060, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 136W Bauform - Transistor: PowerDI 5060 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 6400µohm SVHC: Lead (25-Jun-2025) | auf Bestellung 2324 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMTH6010LPSQ-13 | Diodes Incorporated | Description: MOSFET N-CH 60V 13.5A PWRDI5060 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 2.6W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 22184 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6010LPSQ-13 | Diodes | Trans MOSFET N-CH 60V 13.5A Automotive 8-Pin PowerDI 5060 Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH6010LPSQ-13 | DIODES INC. | Description: DIODES INC. - DMTH6010LPSQ-13 - Leistungs-MOSFET, n-Kanal, 60 V, 100 A, 6400 µohm, PowerDI 5060, Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 100A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 136W Bauform - Transistor: PowerDI 5060 Anzahl der Pins: 8Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 6400µohm SVHC: Lead (25-Jun-2025) | auf Bestellung 2324 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMTH6010LPSQ-13 | Diodes Incorporated | Description: MOSFET N-CH 60V 13.5A PWRDI5060 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 2.6W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6010LPSW-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 41V 60V PowerDI5060-8/SWP T&R 2.5K | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH6010LPSW-13 | Diodes Incorporated | Description: MOSFET N-CH 60V 15.5A/80A PWRDI | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH6010LPSWQ-13 | Diodes Incorporated | Description: MOSFET N-CH 60V 15.5A/80A PWRDI Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 2.9W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type Q) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 169637 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6010LPSWQ-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 41V 60V PowerDI5060-8/SWP T&R 2.5K | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH6010LPSWQ-13 | Diodes Incorporated | Description: MOSFET N-CH 60V 15.5A/80A PWRDI Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15.5A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 2.9W (Ta), 75W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type Q) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 41.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2090 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 167500 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6010SCT | Diodes Zetex | Trans MOSFET N-CH 60V 100A 3-Pin(3+Tab) TO-220 Tube | Produkt ist nicht verfügbar | Mindestbestellmenge: 50 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH6010SCT | Diodes Zetex | Trans MOSFET N-CH 60V 100A 3-Pin(3+Tab) TO-220 Tube | auf Bestellung 5450 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMTH6010SCT | Diodes Incorporated | Description: MOSFET N-CH 60V 100A TO220-3 | auf Bestellung 4 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH6010SCT | Diodes Incorporated | MOSFETs MOSFET BVDSS: 41V-60V | auf Bestellung 6 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6010SK3-13 | Diodes Incorporated | Description: MOSFET N-CH 60V 16.3A/70A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 30 V | auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6010SK3-13 | DIODES INC. | Description: DIODES INC. - DMTH6010SK3-13 - Leistungs-MOSFET, n-Kanal, 60 V, 70 A, 5400 µohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 70A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 3.1W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 5400µohm SVHC: Lead (27-Jun-2024) | auf Bestellung 1194 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMTH6010SK3-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 41V-60 | auf Bestellung 3115 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6010SK3-13 | Diodes Incorporated | Description: MOSFET N-CH 60V 16.3A/70A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 36.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1940 pF @ 30 V | auf Bestellung 11951 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6010SK3-13 | DIODES INC. | Description: DIODES INC. - DMTH6010SK3-13 - Leistungs-MOSFET, n-Kanal, 60 V, 70 A, 5400 µohm, TO-252 (DPAK), Oberflächenmontage tariffCode: 85411000 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 70A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 3.1W Bauform - Transistor: TO-252 (DPAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 5400µohm SVHC: Lead (27-Jun-2024) | auf Bestellung 1194 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMTH6010SK3Q-13 | Diodes Incorporated | Description: MOSFET N-CH 60V 16.3A/70A TO252 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 38.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2841 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 277156 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6010SK3Q-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 41V-60V | auf Bestellung 1856 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6010SK3Q-13 | Diodes Incorporated | Description: MOSFET N-CH 60V 16.3A/70A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16.3A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 3.1W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 38.1 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2841 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 275000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6010SPS-13 | Diodes Incorporated | Description: MOSFET N-CH 60V PWRDI5060 | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH6010SPS-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 31V-40V | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH6012LPSW-13 | Diodes Incorporated | Description: MOSFET N-CH 60V 11.5/50.5A PWRDI Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: PowerDI5060-8 (Type Q) Vgs(th) (Max) @ Id: 2.3V @ 250µA Power Dissipation (Max): 2.8W (Ta), 53.6W (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 50.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) | auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6012LPSW-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 41V~60V PowerDI5060-8/SWP T&R 2.5K | Produkt ist nicht verfügbar | Mindestbestellmenge: 2 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH6012LPSW-13 | Diodes Zetex | 60V +175 Degrees N-Channel Enhancement Mode MOSFET | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH6012LPSW-13 | Diodes Zetex | 60V +175 Degrees N-Channel Enhancement Mode MOSFET | auf Bestellung 15000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMTH6012LPSWQ-13 | Diodes Incorporated | Description: MOSFET N-CH 60V 11.5/50.5A PWRDI Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 50.5A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V Power Dissipation (Max): 2.8W (Ta), 53.6W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type Q) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 1030 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6012LPSWQ-13 | Diodes Incorporated | Description: MOSFET N-CH 60V 11.5/50.5A PWRDI Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 50.5A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 20A, 10V Power Dissipation (Max): 2.8W (Ta), 53.6W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: PowerDI5060-8 (Type Q) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 13.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 785 pF @ 30 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH6012LPSWQ-13 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 41V-60V PowerDI5060-8/SWP T&R 2.5K | auf Bestellung 2154 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6015LDVWQ-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 41V-60V PowerDI3333-8/SWP T&R 2K | auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6015LPDWQ-13 | Diodes Incorporated | Description: MOSFET 2N-CH 60V 9.4A PWRDI50 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.6W (Ta), 39.5W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 36.3A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 30V Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UXD) Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 628 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6015LPDWQ-13 | Diodes Incorporated | Description: MOSFET 2N-CH 60V 9.4A PWRDI50 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.6W (Ta), 39.5W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 36.3A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 825pF @ 30V Rds On (Max) @ Id, Vgs: 20mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 14.3nC @ 10V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: PowerDI5060-8 (Type UXD) Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH6016LFDFW-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 41V~60V U-DFN2020-6 T&R 10K | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH6016LFDFW-7 | Diodes Incorporated | Description: MOSFET N-CH 60V 9.4A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V Power Dissipation (Max): 1.06W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: U-DFN2020-6 (SWP) (Type F) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 925 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6016LFDFW-7 | Diodes Incorporated | MOSFETs MOSFET BVDSS: 41V-60V U-DFN2020-6 T&R 3K | auf Bestellung 6496 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6016LFDFW-7 | Diodes Incorporated | Description: MOSFET N-CH 60V 9.4A 6UDFN Packaging: Cut Tape (CT) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V Power Dissipation (Max): 1.06W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: U-DFN2020-6 (SWP) (Type F) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 925 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 14818 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6016LFDFWQ-13 | Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60V | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH6016LFDFWQ-13 | Diodes Zetex | Trans MOSFET N-CH 60V 9.4A Automotive AEC-Q101 6-Pin UDFN EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH6016LFDFWQ-13 | Diodes Zetex | Trans MOSFET N-CH 60V 9.4A Automotive AEC-Q101 6-Pin UDFN EP T/R | auf Bestellung 30000 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMTH6016LFDFWQ-7 | Diodes Incorporated | MOSFET MOSFET BVDSS: 41V-60V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| DMTH6016LFDFWQ-7R | DIODES INC. | Description: DIODES INC. - DMTH6016LFDFWQ-7R - Leistungs-MOSFET, n-Kanal, 60 V, 9.4 A, 0.0138 ohm, U-DFN2020, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 9.4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3V euEccn: NLR Verlustleistung: 2.3W Bauform - Transistor: U-DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0138ohm SVHC: No SVHC (15-Jan-2018) | auf Bestellung 2286 Stücke: Lieferzeit 14-21 Tag (e) |
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| DMTH6016LFDFWQ-7R | Diodes Incorporated | Description: MOSFET N-CH 60V 9.4A 6UDFN Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 10A, 10V Power Dissipation (Max): 1.06W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: U-DFN2020-6 (SWP) (Type F) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 925 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| DMTH6016LFDFWQ-7R | Diodes Incorporated | MOSFETs MOSFET BVDSS: 41V-60V | auf Bestellung 66997 Stücke: Lieferzeit 10-14 Tag (e) |
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