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NVMFD5C672NLWFT1GON SemiconductorTrans MOSFET N-CH 60V 11A Automotive AEC-Q101 8-Pin DFN EP T/R
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NVMFD5C672NLWFT1GonsemiDescription: MOSFET 2N-CH 60V 12A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W (Ta), 45W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 49A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 793pF @ 25V
Rds On (Max) @ Id, Vgs: 11.9mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 30µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2150 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.45 EUR
10+3.55 EUR
100+2.45 EUR
500+2.06 EUR
Mindestbestellmenge: 4 Stücke
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NVMFD5C672NLWFT1GON SemiconductorMOSFET T6 60V LL S08FL DS
auf Bestellung 6000 Stücke:
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NVMFD5C672NLWFT1GON SemiconductorTrans MOSFET N-CH 60V 11A Automotive AEC-Q101 8-Pin DFN EP T/R
auf Bestellung 1300 Stücke:
Lieferzeit 14-21 Tag (e)
58+3.03 EUR
63+2.74 EUR
64+2.67 EUR
100+2.24 EUR
250+2.19 EUR
500+1.92 EUR
1000+1.86 EUR
Mindestbestellmenge: 58 Stücke
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NVMFD5C674NLT1GonsemiDescription: MOSFET 2N-CH 60V 11A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 37W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 25µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.96 EUR
10+3.2 EUR
100+2.2 EUR
500+1.8 EUR
Mindestbestellmenge: 5 Stücke
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NVMFD5C674NLT1GON SemiconductorMOSFET T6 60V LL S08FL DS
auf Bestellung 830 Stücke:
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NVMFD5C674NLT1GON Semiconductor
auf Bestellung 40500 Stücke:
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NVMFD5C674NLT1GonsemiDescription: MOSFET 2N-CH 60V 11A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 37W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 25µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
1500+1.57 EUR
Mindestbestellmenge: 1500 Stücke
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NVMFD5C674NLT1GonsemiMOSFETs T6 60V LL S08FL DS
auf Bestellung 8916 Stücke:
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2+3.22 EUR
10+2.37 EUR
100+2.07 EUR
500+1.83 EUR
1000+1.68 EUR
Mindestbestellmenge: 2 Stücke
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NVMFD5C674NLWFT1GonsemiDescription: MOSFET 2N-CH 60V 11A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 37W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 25µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 38877 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.83 EUR
10+2.48 EUR
100+2.01 EUR
500+1.78 EUR
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NVMFD5C674NLWFT1GON SemiconductorMOSFET T6 60V LL S08FL DS
auf Bestellung 298 Stücke:
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NVMFD5C674NLWFT1GonsemiDescription: MOSFET 2N-CH 60V 11A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 37W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V
Rds On (Max) @ Id, Vgs: 14.4mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 25µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 37500 Stücke:
Lieferzeit 10-14 Tag (e)
1500+1.55 EUR
3000+1.45 EUR
Mindestbestellmenge: 1500 Stücke
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NVMFD5C674NLWFT1GonsemiMOSFETs T6 60V LL S08FL DS
auf Bestellung 4199 Stücke:
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2+3.01 EUR
10+2.56 EUR
100+2.12 EUR
500+1.82 EUR
1000+1.7 EUR
1500+1.62 EUR
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NVMFD5C680NLET1GonsemiMOSFETs T6 60V LL S08FL DS
auf Bestellung 1350 Stücke:
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2+2.62 EUR
10+1.64 EUR
100+1.08 EUR
500+0.86 EUR
1000+0.77 EUR
1500+0.71 EUR
4500+0.64 EUR
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NVMFD5C680NLT1GonsemiMOSFETs T6 60V LL S08FL DS
auf Bestellung 1592 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.81 EUR
10+2.09 EUR
100+1.62 EUR
500+1.52 EUR
1000+1.48 EUR
1500+1.33 EUR
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NVMFD5C680NLT1GonsemiDescription: MOSFET 2N-CH 60V 7.5A 8DFN
Power - Max: 3W (Ta), 19W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 26A (Tc)
Drain to Source Voltage (Vdss): 60V
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 1598 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.44 EUR
10+2.87 EUR
100+1.95 EUR
500+1.57 EUR
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NVMFD5C680NLT1GONSEMIDescription: ONSEMI - NVMFD5C680NLT1G - Dual-MOSFET, n-Kanal, 60 V, 60 V, 26 A, 26 A, 0.028 ohm
tariffCode: 85412900
rohsCompliant: Y-EX
Dauer-Drainstrom Id, p-Kanal: 26A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 60V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 26A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 19W
Drain-Source-Spannung Vds, n-Kanal: 60V
euEccn: NLR
Bauform - Transistor: DFN
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.028ohm
productTraceability: No
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 19W
Betriebstemperatur, max.: 175°C
SVHC: Lead (27-Jun-2024)
auf Bestellung 1252 Stücke:
Lieferzeit 14-21 Tag (e)
100+2.34 EUR
128+1.68 EUR
500+1.45 EUR
1000+1.39 EUR
Mindestbestellmenge: 100 Stücke
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NVMFD5C680NLT1GOn SemiconductorMOSFET N-CH 60V 7.5A Automotive 8-Pin DFN EP T/R Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMFD5C680NLT1GonsemiDescription: MOSFET 2N-CH 60V 7.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 19W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 26A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
1500+1.38 EUR
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NVMFD5C680NLT1GONSEMIDescription: ONSEMI - NVMFD5C680NLT1G - Dual-MOSFET, n-Kanal, 60 V, 60 V, 26 A, 26 A, 0.028 ohm
tariffCode: 85412900
rohsCompliant: Y-EX
Dauer-Drainstrom Id, p-Kanal: 26A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 60V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 26A
Drain-Source-Durchgangswiderstand, p-Kanal: -
Verlustleistung, p-Kanal: 19W
Drain-Source-Spannung Vds, n-Kanal: 60V
euEccn: NLR
Bauform - Transistor: DFN
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.028ohm
productTraceability: No
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 19W
Betriebstemperatur, max.: 175°C
SVHC: Lead (27-Jun-2024)
auf Bestellung 1252 Stücke:
Lieferzeit 14-21 Tag (e)
74+3.4 EUR
100+2.34 EUR
128+1.68 EUR
500+1.45 EUR
1000+1.39 EUR
Mindestbestellmenge: 74 Stücke
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NVMFD5C680NLT1GON Semiconductor
auf Bestellung 540 Stücke:
Lieferzeit 21-28 Tag (e)
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NVMFD5C680NLWFT1GonsemiDescription: MOSFET 2N-CH 60V 7.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 19W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 26A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
1500+1.34 EUR
3000+1.25 EUR
Mindestbestellmenge: 1500 Stücke
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NVMFD5C680NLWFT1GonsemiDescription: MOSFET 2N-CH 60V 7.5A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3W (Ta), 19W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 26A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V
Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V
Vgs(th) (Max) @ Id: 2.2V @ 13µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4272 Stücke:
Lieferzeit 10-14 Tag (e)
5+4.33 EUR
10+2.8 EUR
100+1.9 EUR
500+1.52 EUR
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NVMFD5C680NLWFT1GonsemiMOSFETs T6 60V LL S08FL DS
auf Bestellung 6018 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.44 EUR
10+2.78 EUR
100+1.92 EUR
500+1.52 EUR
1000+1.33 EUR
1500+1.31 EUR
3000+1.3 EUR
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NVMFD6H840NLT1GON Semiconductor
auf Bestellung 1500 Stücke:
Lieferzeit 21-28 Tag (e)
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NVMFD6H840NLT1GonsemiDescription: MOSFET 2N-CH 80V 14A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 74A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2002pF @ 40V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 96µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
1500+2.05 EUR
3000+2 EUR
Mindestbestellmenge: 1500 Stücke
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NVMFD6H840NLT1GonsemiMOSFETs T8 80V LL SO8FL DS
auf Bestellung 6197 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.78 EUR
10+4.41 EUR
100+3.12 EUR
250+3.09 EUR
500+2.7 EUR
1000+2.31 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NVMFD6H840NLT1GonsemiDescription: MOSFET 2N-CH 80V 14A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 74A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 2002pF @ 40V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 96µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6742 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.66 EUR
10+4.34 EUR
100+3.02 EUR
500+2.46 EUR
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NVMFD6H840NLWFT1GonsemiDescription: MOSFET 2N-CH 80V 14A 8DFN
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Vgs(th) (Max) @ Id: 2V @ 96µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2002pF @ 40V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 74A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
NVMFD6H840NLWFT1GON Semiconductor
auf Bestellung 2950 Stücke:
Lieferzeit 21-28 Tag (e)
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NVMFD6H840NLWFT1GonsemiMOSFET T8 80V LL SO8FL DS
auf Bestellung 1495 Stücke:
Lieferzeit 866-870 Tag (e)
1+5.46 EUR
10+4.93 EUR
100+3.96 EUR
500+3.25 EUR
1000+2.7 EUR
Im Einkaufswagen  Stück im Wert von  UAH
NVMFD6H840NLWFT1GonsemiDescription: MOSFET 2N-CH 80V 14A 8DFN
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Vgs(th) (Max) @ Id: 2V @ 96µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2002pF @ 40V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 74A (Tc)
Drain to Source Voltage (Vdss): 80V
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 837 Stücke:
Lieferzeit 10-14 Tag (e)
4+6.24 EUR
10+4.07 EUR
100+2.84 EUR
500+2.45 EUR
Mindestbestellmenge: 4 Stücke
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NVMFD6H846NLT1GonsemiDescription: MOSFET 2N-CH 80V 9.4A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W (Ta), 34W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 31A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 40V
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 21µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 10219 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.37 EUR
10+3.47 EUR
100+2.39 EUR
500+1.93 EUR
Mindestbestellmenge: 4 Stücke
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NVMFD6H846NLT1GON Semiconductor
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NVMFD6H846NLT1GonsemiMOSFETs T8 80V LL SO8FL DS
auf Bestellung 985 Stücke:
Lieferzeit 10-14 Tag (e)
1+4.52 EUR
10+2.78 EUR
100+2.12 EUR
500+1.82 EUR
1000+1.78 EUR
1500+1.7 EUR
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NVMFD6H846NLT1GonsemiDescription: MOSFET 2N-CH 80V 9.4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W (Ta), 34W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 31A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 40V
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 21µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
1500+1.7 EUR
3000+1.64 EUR
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NVMFD6H846NLWFT1GonsemiDescription: MOSFET 2N-CH 80V 9.4A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W (Ta), 34W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 31A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 40V
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 21µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5365 Stücke:
Lieferzeit 10-14 Tag (e)
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10+2.46 EUR
100+1.67 EUR
500+1.33 EUR
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NVMFD6H846NLWFT1GonsemiDescription: MOSFET 2N-CH 80V 9.4A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W (Ta), 34W (Tc)
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 31A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 40V
Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V
Vgs(th) (Max) @ Id: 2V @ 21µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4500 Stücke:
Lieferzeit 10-14 Tag (e)
1500+1.17 EUR
3000+1.08 EUR
4500+1.04 EUR
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NVMFD6H846NLWFT1GonsemiMOSFET MOSFET - Power, Dual N-Channel, 80 V, 15 mohm 31 A NVMFD6H846NL DFN8 (Pb-Free, Wettable Flanks)
auf Bestellung 1480 Stücke:
Lieferzeit 470-474 Tag (e)
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NVMFD6H852NLT1GONSEMIDescription: ONSEMI - NVMFD6H852NLT1G - Dual-MOSFET, n-Kanal, 80 V, 80 V, 25 A, 25 A, 0.021 ohm
tariffCode: 85412900
rohsCompliant: Y-EX
Dauer-Drainstrom Id, p-Kanal: 25A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 80V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 25A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.021ohm
Verlustleistung, p-Kanal: 38W
Drain-Source-Spannung Vds, n-Kanal: 80V
euEccn: NLR
Bauform - Transistor: DFN
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.021ohm
productTraceability: No
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 38W
Betriebstemperatur, max.: 175°C
SVHC: Lead (27-Jun-2024)
auf Bestellung 102 Stücke:
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69+3.65 EUR
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NVMFD6H852NLT1GonsemiMOSFETs T8 80V LL SO8FL DS
auf Bestellung 1500 Stücke:
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2+2.26 EUR
10+1.74 EUR
100+1.4 EUR
500+1.21 EUR
1000+1.17 EUR
1500+0.88 EUR
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NVMFD6H852NLT1GOn SemiconductorMOSFETs T8 80V LL SO8FL DS Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVMFD6H852NLT1GonsemiDescription: MOSFET 2N-CH 80V 7A/25A 8DFN DL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W (Ta), 38W (Tc)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 521pF @ 40V
Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Power Dissipation (Max): 3.2W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 2V @ 26µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 521 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 655 Stücke:
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10+2.11 EUR
100+1.42 EUR
500+1.12 EUR
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NVMFD6H852NLT1GON SemiconductorMOSFET T8 80V LL SO8FL DS
auf Bestellung 1158 Stücke:
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NVMFD6H852NLT1GONSEMIDescription: ONSEMI - NVMFD6H852NLT1G - Dual-MOSFET, n-Kanal, 80 V, 80 V, 25 A, 25 A, 0.021 ohm
tariffCode: 85412900
Drain-Source-Spannung Vds: 80V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 25A
Dauer-Drainstrom Id, p-Kanal: 25A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 80V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 25A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.021ohm
Verlustleistung, p-Kanal: 38W
Drain-Source-Spannung Vds, n-Kanal: 80V
euEccn: NLR
Bauform - Transistor: DFN
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.021ohm
productTraceability: No
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 38W
Betriebstemperatur, max.: 175°C
SVHC: Lead (27-Jun-2024)
auf Bestellung 102 Stücke:
Lieferzeit 14-21 Tag (e)
100+3.65 EUR
Mindestbestellmenge: 100 Stücke
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NVMFD6H852NLT1GON Semiconductor
auf Bestellung 1400 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NVMFD6H852NLT1GonsemiDescription: MOSFET 2N-CH 80V 7A/25A 8DFN DL
Input Capacitance (Ciss) (Max) @ Vds: 521 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Vgs(th) (Max) @ Id: 2V @ 26µA
Power Dissipation (Max): 3.2W (Ta), 38W (Tc)
Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Configuration: 2 N-Channel (Dual)
Power - Max: 3.2W (Ta), 38W (Tc)
Drain to Source Voltage (Vdss): 80V
Input Capacitance (Ciss) (Max) @ Vds: 521pF @ 40V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
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NVMFD6H852NLWFT1GonsemiDescription: MOSFET 2N-CH 80V 7A/25A 8DFN DL
Input Capacitance (Ciss) (Max) @ Vds: 521 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Vgs(th) (Max) @ Id: 2V @ 26µA
Power Dissipation (Max): 3.2W (Ta), 38W (Tc)
Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount, Wettable Flank
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Configuration: 2 N-Channel (Dual)
Power - Max: 3.2W (Ta), 38W (Tc)
Drain to Source Voltage (Vdss): 80V
Input Capacitance (Ciss) (Max) @ Vds: 521pF @ 40V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
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NVMFD6H852NLWFT1GONSEMIDescription: ONSEMI - NVMFD6H852NLWFT1G - Dual-MOSFET, n-Kanal, 80 V, 80 V, 25 A, 25 A, 0.021 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 25A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 80V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 25A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.021ohm
Verlustleistung, p-Kanal: 38W
Drain-Source-Spannung Vds, n-Kanal: 80V
euEccn: NLR
Bauform - Transistor: DFN
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.021ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 38W
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (15-Jan-2018)
auf Bestellung 1308 Stücke:
Lieferzeit 14-21 Tag (e)
101+2.48 EUR
102+2.28 EUR
146+1.46 EUR
500+1.07 EUR
1000+0.93 EUR
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NVMFD6H852NLWFT1GonsemiMOSFETs T8 80V LL SO8FL DS
auf Bestellung 1490 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.15 EUR
10+1.94 EUR
100+1.46 EUR
500+1.3 EUR
1000+1.07 EUR
1500+1.04 EUR
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NVMFD6H852NLWFT1GonsemiDescription: MOSFET 2N-CH 80V 7A/25A 8DFN DL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount, Wettable Flank
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W (Ta), 38W (Tc)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 521pF @ 40V
Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
Power Dissipation (Max): 3.2W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 2V @ 26µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 521 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 745 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.69 EUR
10+2.36 EUR
100+1.58 EUR
500+1.26 EUR
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NVMFD6H852NLWFT1GON SemiconductorMOSFET T8 80V LL SO8FL DS
auf Bestellung 2990 Stücke:
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NVMFD6H852NLWFT1GONSEMIDescription: ONSEMI - NVMFD6H852NLWFT1G - Dual-MOSFET, n-Kanal, 80 V, 80 V, 25 A, 25 A, 0.021 ohm
tariffCode: 85412900
Drain-Source-Spannung Vds: 80V
rohsCompliant: YES
Dauer-Drainstrom Id: 25A
Dauer-Drainstrom Id, p-Kanal: 25A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
Drain-Source-Spannung Vds, p-Kanal: 80V
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 25A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.021ohm
Verlustleistung, p-Kanal: 38W
Drain-Source-Spannung Vds, n-Kanal: 80V
euEccn: NLR
Bauform - Transistor: DFN
Anzahl der Pins: 8Pin(s)
Produktpalette: -
Drain-Source-Durchgangswiderstand, n-Kanal: 0.021ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 38W
Betriebstemperatur, max.: 175°C
SVHC: No SVHC (15-Jan-2018)
auf Bestellung 1308 Stücke:
Lieferzeit 14-21 Tag (e)
101+2.48 EUR
102+2.28 EUR
146+1.46 EUR
500+1.07 EUR
1000+0.93 EUR
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NVMFS003P03P8ZT1GonsemiDescription: PFET SO8FL -30V 3MO
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35.7A (Ta), 234A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 23A, 10V
Power Dissipation (Max): 3.9W (Ta), 168.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 12120 pF @ 15 V
Produkt ist nicht verfügbar
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NVMFS003P03P8ZT1GonsemiDescription: PFET SO8FL -30V 3MO
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 35.7A (Ta), 234A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 23A, 10V
Power Dissipation (Max): 3.9W (Ta), 168.7W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 12120 pF @ 15 V
auf Bestellung 1476 Stücke:
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10+3.84 EUR
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500+2.58 EUR
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NVMFS003P03P8ZT1GonsemiMOSFET Power MOSFET - Power, Single P-Channel, SO8-FL -30 V, 1.8 mohm, -234 A
auf Bestellung 601 Stücke:
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500+2.95 EUR
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1500+2.26 EUR
4500+2.18 EUR
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NVMFS005N10MCLT1GonsemiDescription: PTNG 100V LL SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.4A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 34A, 10V
Power Dissipation (Max): 3.8W (Ta), 131W (Tc)
Vgs(th) (Max) @ Id: 3V @ 192µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 47053 Stücke:
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5+4.71 EUR
10+3.03 EUR
100+2.08 EUR
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NVMFS005N10MCLT1GonsemiDescription: PTNG 100V LL SO8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18.4A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 5.1mOhm @ 34A, 10V
Power Dissipation (Max): 3.8W (Ta), 131W (Tc)
Vgs(th) (Max) @ Id: 3V @ 192µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
1500+1.48 EUR
3000+1.38 EUR
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NVMFS005N10MCLT1GonsemiMOSFETs PTNG 100V LL SO8FL
Produkt ist nicht verfügbar
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NVMFS005N10MCLT1GON SemiconductorTrans MOSFET N-CH 100V 18.4A 5-Pin SO-FL EP T/R Automotive AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
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NVMFS014P04M8LT1GonsemiMOSFETs Power MOSFET, Single P-Channel, -40 V, 13.8 mohm a. -10V, -52.1 A
auf Bestellung 6937 Stücke:
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2+2.48 EUR
10+1.68 EUR
100+1.23 EUR
500+0.99 EUR
1000+0.77 EUR
1500+0.74 EUR
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NVMFS014P04M8LT1GonsemiDescription: MV8 40V P-CH LL IN S08FL PACKAGE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 52.1A (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V
Power Dissipation (Max): 3.6W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 420µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1734 pF @ 20 V
Qualification: AEC-Q101
auf Bestellung 35605 Stücke:
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NVMFS014P04M8LT1GON SemiconductorTrans MOSFET P-CH 40V 12.5A Automotive AEC-Q101 5-Pin SO-FL EP T/R
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NVMFS014P04M8LT1GonsemiDescription: MV8 40V P-CH LL IN S08FL PACKAGE
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1734 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.4V @ 420µA
Power Dissipation (Max): 3.6W (Ta), 60W (Tc)
Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 52.1A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
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NVMFS015N10MCLT1GONSEMIDescription: ONSEMI - NVMFS015N10MCLT1G - Leistungs-MOSFET, n-Kanal, 100 V, 47.1 A, 9700 µohm, DFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 47.1A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Gate-Source-Schwellenspannung, max.: 1.5V
euEccn: NLR
Verlustleistung: 59.5W
Bauform - Transistor: DFN
Anzahl der Pins: 5Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 9700µohm
SVHC: Lead (27-Jun-2024)
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NVMFS015N10MCLT1GONSEMIDescription: ONSEMI - NVMFS015N10MCLT1G - Leistungs-MOSFET, n-Kanal, 100 V, 47.1 A, 9700 µohm, DFN, Oberflächenmontage
tariffCode: 85412900
Transistormontage: Oberflächenmontage
Drain-Source-Spannung Vds: 100V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 47.1A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: AEC-Q101
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Verlustleistung Pd: 59.5W
Gate-Source-Schwellenspannung, max.: 1.5V
euEccn: NLR
Verlustleistung: 59.5W
Bauform - Transistor: DFN
Qualifizierungsstandard der Automobilindustrie: AEC-Q101
Anzahl der Pins: 5Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
Wandlerpolarität: n-Kanal
Kanaltyp: n-Kanal
Betriebswiderstand, Rds(on): 0.0097ohm
Rds(on)-Prüfspannung: 10V
Betriebstemperatur, max.: 175°C
Drain-Source-Durchgangswiderstand: 9700µohm
SVHC: Lead (27-Jun-2024)
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NVMFS015N10MCLT1GonsemiDescription: MOSFET N-CH 100V 10.5A/54A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 14A, 10V
Power Dissipation (Max): 3W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 282µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1338 pF @ 50 V
Qualification: AEC-Q101
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NVMFS015N10MCLT1GONSEMICategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 47.1A; Idm: 259A; 23.8W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 47.1A
Pulsed drain current: 259A
Power dissipation: 23.8W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 12.2mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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NVMFS015N10MCLT1GonsemiMOSFETs PTNG 100V LL NCH SO-8FL FOR AUTOMOTIVE MARKET
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NVMFS015N10MCLT1GonsemiDescription: MOSFET N-CH 100V 10.5A/54A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 54A (Tc)
Rds On (Max) @ Id, Vgs: 12.2mOhm @ 14A, 10V
Power Dissipation (Max): 3W (Ta), 79W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 282µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1338 pF @ 50 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NVMFS016N06CT1GonsemiDescription: MOSFET N-CH 60V 10A/33A 5DFN
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 489 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 4V @ 25µA
Power Dissipation (Max): 3.4W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 33A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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NVMFS016N06CT1GONSEMICategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 226A; 18W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 33A
Power dissipation: 18W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 15.6mΩ
Mounting: SMD
Gate charge: 6.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 226A
Produkt ist nicht verfügbar
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NVMFS016N06CT1GON Semiconductor
auf Bestellung 1480 Stücke:
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NVMFS016N06CT1GonsemiMOSFETs T6 60V SG HIGHER RDS-ON PORTFOLIO
auf Bestellung 1500 Stücke:
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NVMFS016N06CT1GonsemiDescription: MOSFET N-CH 60V 10A/33A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 33A (Tc)
Rds On (Max) @ Id, Vgs: 15.6mOhm @ 5A, 10V
Power Dissipation (Max): 3.4W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 25µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 489 pF @ 30 V
Qualification: AEC-Q101
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NVMFS016N10MCLT1GonsemiDescription: PTNG 100V LL SO8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 11A, 10V
Power Dissipation (Max): 3.6W (Ta), 64W (Tc)
Vgs(th) (Max) @ Id: 3V @ 64µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
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1500+0.86 EUR
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NVMFS016N10MCLT1GONSEMICategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 243A; 32W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 46A
Pulsed drain current: 243A
Power dissipation: 32W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 14mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMFS016N10MCLT1GonsemiDescription: PTNG 100V LL SO8FL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 46A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 11A, 10V
Power Dissipation (Max): 3.6W (Ta), 64W (Tc)
Vgs(th) (Max) @ Id: 3V @ 64µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2094 Stücke:
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NVMFS016N10MCLT1GonsemiMOSFETs PTNG 100V LL SO8FL
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10+2 EUR
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NVMFS016N10MCLT1GON SemiconductorTrans MOSFET N-CH 100V 10.9A Automotive 5-Pin SO-FL EP T/R
Produkt ist nicht verfügbar
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NVMFS020N06ConsemiMOSFETs T6 60V SG HIGHER RDS-ON PORTFOLIO
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NVMFS020N06CT1GonsemiDescription: MOSFET N-CH 60V 9A/28A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 19.6mOhm @ 4A, 10V
Power Dissipation (Max): 3.4W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 30 V
Qualification: AEC-Q101
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NVMFS020N06CT1GonsemiMOSFETs T6 60V SG HIGHER RDS-ON PORTFOLIO
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NVMFS020N06CT1GonsemiDescription: MOSFET N-CH 60V 9A/28A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 19.6mOhm @ 4A, 10V
Power Dissipation (Max): 3.4W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 30 V
Qualification: AEC-Q101
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NVMFS021N10MCLT1GonsemiDescription: PTNG 100V LL SO8FL
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 3V @ 42µA
Power Dissipation (Max): 3.6W (Ta), 49W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 30649 Stücke:
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NVMFS021N10MCLT1GonsemiDescription: PTNG 100V LL SO8FL
Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 3V @ 42µA
Power Dissipation (Max): 3.6W (Ta), 49W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 31A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 30000 Stücke:
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1500+0.54 EUR
3000+0.51 EUR
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NVMFS021N10MCLT1GONN
auf Bestellung 3000 Stücke:
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NVMFS021N10MCLT1GonsemiMOSFETs Single N-Channel Power MOSFET 100 V, 31 A, 23 mohm
auf Bestellung 4452 Stücke:
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2+2.07 EUR
10+1.42 EUR
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500+0.75 EUR
1000+0.71 EUR
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NVMFS024N06CT1GONSEMICategory: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 158A; 14W; DFN5
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 158A
Power dissipation: 14W
Case: DFN5
Gate-source voltage: ±20V
On-state resistance: 22mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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NVMFS024N06CT1GonsemiMOSFETs T6 60V SG HIGHER RDS
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NVMFS024N06CT1GonsemiDescription: MOSFET N-CH 60V 8A/25A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 10V
Power Dissipation (Max): 3.4W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 333 pF @ 30 V
Qualification: AEC-Q101
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NVMFS024N06CT1GonsemiDescription: MOSFET N-CH 60V 8A/25A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 3A, 10V
Power Dissipation (Max): 3.4W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 20µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 333 pF @ 30 V
Qualification: AEC-Q101
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NVMFS025P04M8Lonsemi MV8 40V P-CH LL IN S08FL PACKAGE
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NVMFS025P04M8LT1GonsemiDescription: MV8 40V P-CH LL IN S08FL PACKAGE
Input Capacitance (Ciss) (Max) @ Vds: 1058 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.4V @ 255µA
Power Dissipation (Max): 3.5W (Ta), 44.1W (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34.6A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
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NVMFS025P04M8LT1GON SemiconductorTrans MOSFET P-CH 40V 9.4A 5-Pin SO-FL EP T/R Automotive AEC-Q101
auf Bestellung 2582 Stücke:
Lieferzeit 14-21 Tag (e)
822+0.8 EUR
1000+0.73 EUR
Mindestbestellmenge: 822 Stücke
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NVMFS025P04M8LT1GonsemiMOSFETs MV8 40V P-CH LL IN S08FL PACKAGE
auf Bestellung 1687 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.57 EUR
10+1.62 EUR
100+1.07 EUR
500+0.83 EUR
1000+0.68 EUR
1500+0.62 EUR
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NVMFS025P04M8LT1GON SemiconductorTrans MOSFET P-CH 40V 9.4A 5-Pin SO-FL EP T/R Automotive AEC-Q101
Produkt ist nicht verfügbar
 Mindestbestellmenge: 1500 Stücke
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NVMFS025P04M8LT1GonsemiDescription: MV8 40V P-CH LL IN S08FL PACKAGE
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 34.6A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 15A, 10V
Power Dissipation (Max): 3.5W (Ta), 44.1W (Tc)
Vgs(th) (Max) @ Id: 2.4V @ 255µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 16.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1058 pF @ 20 V
auf Bestellung 1492 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.9 EUR
13+1.64 EUR
100+1.14 EUR
500+0.95 EUR
Mindestbestellmenge: 11 Stücke
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NVMFS027N10MCLT1GonsemiMOSFETs Single N-Channel Power MOSFET 100V, 28A, 26mohm
auf Bestellung 2629 Stücke:
Lieferzeit 10-14 Tag (e)
2+1.92 EUR
10+1.33 EUR
100+1 EUR
500+0.87 EUR
1000+0.77 EUR
1500+0.7 EUR
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NVMFS027N10MCLT1GonsemiDescription: PTNG 100V LL SO8FL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.9A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 7A, 10V
Power Dissipation (Max): 3.5W (Ta), 46W (Tc)
Vgs(th) (Max) @ Id: 3V @ 38µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Grade: Automotive
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 800 pF @ 50 V
Qualification: AEC-Q101
auf Bestellung 160500 Stücke:
Lieferzeit 10-14 Tag (e)
1500+0.69 EUR
3000+0.68 EUR
4500+0.67 EUR
Mindestbestellmenge: 1500 Stücke
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