Produkte > NVM
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| NVMFD5C668NLWFT1G | ONSEMI | Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 68A; Idm: 454A; 29W; DFN8 Mounting: SMD Case: DFN8 Kind of package: reel; tape Pulsed drain current: 454A Power dissipation: 29W Gate charge: 21.3nC Polarisation: unipolar Drain current: 68A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET x2 Gate-source voltage: ±20V On-state resistance: 6.5mΩ | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFD5C668NLWFT1G | ON Semiconductor | Trans MOSFET N-CH 60V 15.5A Automotive 8-Pin DFN EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFD5C672NLT1G | ONSEMI | Description: ONSEMI - NVMFD5C672NLT1G - Dual-MOSFET, n-Kanal, 60 V, 60 V, 49 A, 49 A, 0.0119 ohm tariffCode: 85412900 rohsCompliant: Y-EX Dauer-Drainstrom Id, p-Kanal: 49A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 60V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 49A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: 45W Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: DFN Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.0119ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 45W Betriebstemperatur, max.: 175°C SVHC: Lead (25-Jun-2025) | auf Bestellung 1270 Stücke: Lieferzeit 14-21 Tag (e) |
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| NVMFD5C672NLT1G | onsemi | Description: MOSFET 2N-CH 60V 12A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta), 45W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 49A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 793pF @ 25V Rds On (Max) @ Id, Vgs: 11.9mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 30µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 2485 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFD5C672NLT1G | ONSEMI | Description: ONSEMI - NVMFD5C672NLT1G - Dual-MOSFET, n-Kanal, 60 V, 60 V, 49 A, 49 A, 0.0119 ohm tariffCode: 85412900 rohsCompliant: Y-EX Dauer-Drainstrom Id, p-Kanal: 49A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Drain-Source-Spannung Vds, p-Kanal: 60V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 49A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: 45W Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: DFN Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.0119ohm productTraceability: No Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 45W Betriebstemperatur, max.: 175°C SVHC: Lead (25-Jun-2025) | auf Bestellung 1270 Stücke: Lieferzeit 14-21 Tag (e) |
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| NVMFD5C672NLT1G | onsemi | Description: MOSFET 2N-CH 60V 12A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta), 45W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 49A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 793pF @ 25V Rds On (Max) @ Id, Vgs: 11.9mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 30µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 3846 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFD5C672NLT1G | ON Semiconductor | MOSFET T6 60V LL S08FL DS | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFD5C672NLWFT1G | onsemi | MOSFET T6 60V LL S08FL DS | auf Bestellung 811 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFD5C672NLWFT1G | ON Semiconductor | Trans MOSFET N-CH 60V 11A Automotive AEC-Q101 8-Pin DFN EP T/R | auf Bestellung 1300 Stücke: Lieferzeit 14-21 Tag (e) |
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| NVMFD5C672NLWFT1G | onsemi | Description: MOSFET 2N-CH 60V 12A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta), 45W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 49A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 793pF @ 25V Rds On (Max) @ Id, Vgs: 11.9mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 30µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFD5C672NLWFT1G | ON Semiconductor | MOSFET T6 60V LL S08FL DS | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFD5C672NLWFT1G | ON Semiconductor | Trans MOSFET N-CH 60V 11A Automotive AEC-Q101 8-Pin DFN EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFD5C672NLWFT1G | onsemi | Description: MOSFET 2N-CH 60V 12A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.1W (Ta), 45W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 49A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 793pF @ 25V Rds On (Max) @ Id, Vgs: 11.9mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 5.7nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 30µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 2890 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFD5C672NLWFT1G | ON Semiconductor | Trans MOSFET N-CH 60V 11A Automotive AEC-Q101 8-Pin DFN EP T/R | auf Bestellung 1300 Stücke: Lieferzeit 14-21 Tag (e) |
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| NVMFD5C674NLT1G | onsemi | Description: MOSFET 2N-CH 60V 11A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 37W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V Rds On (Max) @ Id, Vgs: 14.4mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 25µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 698 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFD5C674NLT1G | onsemi | MOSFETs T6 60V LL S08FL DS | auf Bestellung 8916 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFD5C674NLT1G | onsemi | Description: MOSFET 2N-CH 60V 11A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 37W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V Rds On (Max) @ Id, Vgs: 14.4mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 25µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFD5C674NLT1G | ON Semiconductor | auf Bestellung 40500 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NVMFD5C674NLT1G | ON Semiconductor | MOSFET T6 60V LL S08FL DS | auf Bestellung 830 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFD5C674NLWFT1G | onsemi | Description: MOSFET 2N-CH 60V 11A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 37W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V Rds On (Max) @ Id, Vgs: 14.4mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 25µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 38877 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFD5C674NLWFT1G | onsemi | MOSFETs T6 60V LL S08FL DS | auf Bestellung 4199 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFD5C674NLWFT1G | onsemi | Description: MOSFET 2N-CH 60V 11A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 37W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 42A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 640pF @ 25V Rds On (Max) @ Id, Vgs: 14.4mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 25µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 37500 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFD5C674NLWFT1G | ON Semiconductor | MOSFET T6 60V LL S08FL DS | auf Bestellung 298 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFD5C680NLET1G | onsemi | MOSFETs T6 60V LL S08FL DS | auf Bestellung 1350 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFD5C680NLT1G | ON Semiconductor | auf Bestellung 540 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NVMFD5C680NLT1G | ONSEMI | Description: ONSEMI - NVMFD5C680NLT1G - Dual-MOSFET, n-Kanal, 60 V, 60 V, 26 A, 26 A, 0.028 ohm tariffCode: 85412900 rohsCompliant: Y-EX Dauer-Drainstrom Id, p-Kanal: 26A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 60V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 26A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: 19W Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: DFN Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.028ohm productTraceability: No Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 19W Betriebstemperatur, max.: 175°C SVHC: Lead (27-Jun-2024) | auf Bestellung 1252 Stücke: Lieferzeit 14-21 Tag (e) |
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| NVMFD5C680NLT1G | onsemi | Description: MOSFET 2N-CH 60V 7.5A 8DFN Power - Max: 3W (Ta), 19W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Vgs(th) (Max) @ Id: 2.2V @ 13µA Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 26A (Tc) Drain to Source Voltage (Vdss): 60V Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFD5C680NLT1G | onsemi | MOSFETs T6 60V LL S08FL DS | auf Bestellung 1592 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFD5C680NLT1G | On Semiconductor | MOSFET N-CH 60V 7.5A Automotive 8-Pin DFN EP T/R Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFD5C680NLT1G | ONSEMI | Description: ONSEMI - NVMFD5C680NLT1G - Dual-MOSFET, n-Kanal, 60 V, 60 V, 26 A, 26 A, 0.028 ohm tariffCode: 85412900 rohsCompliant: Y-EX Dauer-Drainstrom Id, p-Kanal: 26A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 60V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 26A Drain-Source-Durchgangswiderstand, p-Kanal: - Verlustleistung, p-Kanal: 19W Drain-Source-Spannung Vds, n-Kanal: 60V euEccn: NLR Bauform - Transistor: DFN Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.028ohm productTraceability: No Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 19W Betriebstemperatur, max.: 175°C SVHC: Lead (27-Jun-2024) | auf Bestellung 1252 Stücke: Lieferzeit 14-21 Tag (e) |
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| NVMFD5C680NLT1G | onsemi | Description: MOSFET 2N-CH 60V 7.5A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 19W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 26A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 13µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFD5C680NLWFT1G | onsemi | Description: MOSFET 2N-CH 60V 7.5A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 19W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 26A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 13µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFD5C680NLWFT1G | onsemi | MOSFETs T6 60V LL S08FL DS | auf Bestellung 6018 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFD5C680NLWFT1G | onsemi | Description: MOSFET 2N-CH 60V 7.5A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3W (Ta), 19W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta), 26A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 350pF @ 25V Rds On (Max) @ Id, Vgs: 28mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 2nC @ 4.5V Vgs(th) (Max) @ Id: 2.2V @ 13µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 4053 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFD6H840NLT1G | onsemi | Description: MOSFET 2N-CH 80V 14A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 74A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2002pF @ 40V Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Vgs(th) (Max) @ Id: 2V @ 96µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFD6H840NLT1G | ON Semiconductor | auf Bestellung 1500 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NVMFD6H840NLT1G | onsemi | Description: MOSFET 2N-CH 80V 14A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 74A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 2002pF @ 40V Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Vgs(th) (Max) @ Id: 2V @ 96µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 21010 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFD6H840NLT1G | onsemi | MOSFETs T8 80V LL SO8FL DS | auf Bestellung 6197 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFD6H840NLWFT1G | onsemi | Description: MOSFET 2N-CH 80V 14A 8DFN Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Vgs(th) (Max) @ Id: 2V @ 96µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V Input Capacitance (Ciss) (Max) @ Vds: 2002pF @ 40V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 74A (Tc) Drain to Source Voltage (Vdss): 80V Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFD6H840NLWFT1G | onsemi | MOSFET T8 80V LL SO8FL DS | auf Bestellung 1495 Stücke: Lieferzeit 866-870 Tag (e) |
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| NVMFD6H840NLWFT1G | ON Semiconductor | auf Bestellung 2950 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NVMFD6H840NLWFT1G | onsemi | Description: MOSFET 2N-CH 80V 14A 8DFN Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Vgs(th) (Max) @ Id: 2V @ 96µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V Input Capacitance (Ciss) (Max) @ Vds: 2002pF @ 40V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 74A (Tc) Drain to Source Voltage (Vdss): 80V Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFD6H846NLT1G | onsemi | MOSFETs T8 80V LL SO8FL DS | auf Bestellung 985 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFD6H846NLT1G | onsemi | Description: MOSFET 2N-CH 80V 9.4A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.2W (Ta), 34W (Tc) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 31A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 40V Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs(th) (Max) @ Id: 2V @ 21µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 10219 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFD6H846NLT1G | ON Semiconductor | auf Bestellung 1490 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NVMFD6H846NLT1G | onsemi | Description: MOSFET 2N-CH 80V 9.4A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.2W (Ta), 34W (Tc) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 31A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 40V Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs(th) (Max) @ Id: 2V @ 21µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFD6H846NLWFT1G | onsemi | Description: MOSFET 2N-CH 80V 9.4A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.2W (Ta), 34W (Tc) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 31A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 40V Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs(th) (Max) @ Id: 2V @ 21µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 2810 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFD6H846NLWFT1G | onsemi | MOSFET MOSFET - Power, Dual N-Channel, 80 V, 15 mohm 31 A NVMFD6H846NL DFN8 (Pb-Free, Wettable Flanks) | auf Bestellung 1480 Stücke: Lieferzeit 470-474 Tag (e) |
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| NVMFD6H846NLWFT1G | onsemi | Description: MOSFET 2N-CH 80V 9.4A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.2W (Ta), 34W (Tc) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 31A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 40V Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs(th) (Max) @ Id: 2V @ 21µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFD6H852NLT1G | ON Semiconductor | auf Bestellung 1400 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NVMFD6H852NLT1G | ON Semiconductor | MOSFET T8 80V LL SO8FL DS | auf Bestellung 1158 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFD6H852NLT1G | ONSEMI | Description: ONSEMI - NVMFD6H852NLT1G - Dual-MOSFET, n-Kanal, 80 V, 80 V, 25 A, 25 A, 0.021 ohm tariffCode: 85412900 rohsCompliant: Y-EX Dauer-Drainstrom Id, p-Kanal: 25A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 80V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 25A Drain-Source-Durchgangswiderstand, p-Kanal: 0.021ohm Verlustleistung, p-Kanal: 38W Drain-Source-Spannung Vds, n-Kanal: 80V euEccn: NLR Bauform - Transistor: DFN Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.021ohm productTraceability: No Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 38W Betriebstemperatur, max.: 175°C SVHC: Lead (27-Jun-2024) | auf Bestellung 102 Stücke: Lieferzeit 14-21 Tag (e) |
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| NVMFD6H852NLT1G | onsemi | Description: MOSFET 2N-CH 80V 7A/25A 8DFN DL Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.2W (Ta), 38W (Tc) FET Type: N-Channel Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 521pF @ 40V Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Power Dissipation (Max): 3.2W (Ta), 38W (Tc) Vgs(th) (Max) @ Id: 2V @ 26µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 521 pF @ 40 V Qualification: AEC-Q101 | auf Bestellung 178 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFD6H852NLT1G | On Semiconductor | MOSFETs T8 80V LL SO8FL DS Транзистори | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFD6H852NLT1G | onsemi | MOSFETs T8 80V LL SO8FL DS | auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFD6H852NLT1G | onsemi | Description: MOSFET 2N-CH 80V 7A/25A 8DFN DL Input Capacitance (Ciss) (Max) @ Vds: 521 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Vgs(th) (Max) @ Id: 2V @ 26µA Power Dissipation (Max): 3.2W (Ta), 38W (Tc) Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive Configuration: 2 N-Channel (Dual) Power - Max: 3.2W (Ta), 38W (Tc) Drain to Source Voltage (Vdss): 80V Input Capacitance (Ciss) (Max) @ Vds: 521pF @ 40V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFD6H852NLT1G | ONSEMI | Description: ONSEMI - NVMFD6H852NLT1G - Dual-MOSFET, n-Kanal, 80 V, 80 V, 25 A, 25 A, 0.021 ohm tariffCode: 85412900 Drain-Source-Spannung Vds: 80V rohsCompliant: Y-EX Dauer-Drainstrom Id: 25A Dauer-Drainstrom Id, p-Kanal: 25A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 80V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 25A Drain-Source-Durchgangswiderstand, p-Kanal: 0.021ohm Verlustleistung, p-Kanal: 38W Drain-Source-Spannung Vds, n-Kanal: 80V euEccn: NLR Bauform - Transistor: DFN Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.021ohm productTraceability: No Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 38W Betriebstemperatur, max.: 175°C SVHC: Lead (27-Jun-2024) | auf Bestellung 102 Stücke: Lieferzeit 14-21 Tag (e) |
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| NVMFD6H852NLWFT1G | onsemi | Description: MOSFET 2N-CH 80V 7A/25A 8DFN DL Input Capacitance (Ciss) (Max) @ Vds: 521 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Vgs(th) (Max) @ Id: 2V @ 26µA Power Dissipation (Max): 3.2W (Ta), 38W (Tc) Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount, Wettable Flank Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive Configuration: 2 N-Channel (Dual) Power - Max: 3.2W (Ta), 38W (Tc) Drain to Source Voltage (Vdss): 80V Input Capacitance (Ciss) (Max) @ Vds: 521pF @ 40V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFD6H852NLWFT1G | ONSEMI | Description: ONSEMI - NVMFD6H852NLWFT1G - Dual-MOSFET, n-Kanal, 80 V, 80 V, 25 A, 25 A, 0.021 ohm tariffCode: 85412900 Drain-Source-Spannung Vds: 80V rohsCompliant: YES Dauer-Drainstrom Id: 25A Dauer-Drainstrom Id, p-Kanal: 25A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 80V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 25A Drain-Source-Durchgangswiderstand, p-Kanal: 0.021ohm Verlustleistung, p-Kanal: 38W Drain-Source-Spannung Vds, n-Kanal: 80V euEccn: NLR Bauform - Transistor: DFN Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.021ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 38W Betriebstemperatur, max.: 175°C SVHC: No SVHC (15-Jan-2018) | auf Bestellung 1308 Stücke: Lieferzeit 14-21 Tag (e) |
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| NVMFD6H852NLWFT1G | ON Semiconductor | MOSFET T8 80V LL SO8FL DS | auf Bestellung 2990 Stücke: Lieferzeit 10-14 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFD6H852NLWFT1G | ONSEMI | Description: ONSEMI - NVMFD6H852NLWFT1G - Dual-MOSFET, n-Kanal, 80 V, 80 V, 25 A, 25 A, 0.021 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 25A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 80V usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 25A Drain-Source-Durchgangswiderstand, p-Kanal: 0.021ohm Verlustleistung, p-Kanal: 38W Drain-Source-Spannung Vds, n-Kanal: 80V euEccn: NLR Bauform - Transistor: DFN Anzahl der Pins: 8Pin(s) Produktpalette: - Drain-Source-Durchgangswiderstand, n-Kanal: 0.021ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 38W Betriebstemperatur, max.: 175°C SVHC: No SVHC (15-Jan-2018) | auf Bestellung 1308 Stücke: Lieferzeit 14-21 Tag (e) |
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| NVMFD6H852NLWFT1G | onsemi | Description: MOSFET 2N-CH 80V 7A/25A 8DFN DL Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount, Wettable Flank Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.2W (Ta), 38W (Tc) FET Type: N-Channel Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 521pF @ 40V Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V Power Dissipation (Max): 3.2W (Ta), 38W (Tc) Vgs(th) (Max) @ Id: 2V @ 26µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 521 pF @ 40 V Qualification: AEC-Q101 | auf Bestellung 745 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFD6H852NLWFT1G | onsemi | MOSFETs T8 80V LL SO8FL DS | auf Bestellung 1490 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFS003P03P8ZT1G | onsemi | Description: PFET SO8FL -30V 3MO Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 35.7A (Ta), 234A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 23A, 10V Power Dissipation (Max): 3.9W (Ta), 168.7W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 12120 pF @ 15 V | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFS003P03P8ZT1G | onsemi | MOSFET Power MOSFET - Power, Single P-Channel, SO8-FL -30 V, 1.8 mohm, -234 A | auf Bestellung 601 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFS003P03P8ZT1G | onsemi | Description: PFET SO8FL -30V 3MO Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 35.7A (Ta), 234A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 23A, 10V Power Dissipation (Max): 3.9W (Ta), 168.7W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 167 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 12120 pF @ 15 V | auf Bestellung 1476 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFS005N10MCLT1G | ONSEMI | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 108A; Idm: 695A; 65W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 108A Pulsed drain current: 695A Power dissipation: 65W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 5.1mΩ Mounting: SMD Gate charge: 55nC Kind of package: reel; tape Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFS005N10MCLT1G | onsemi | Description: PTNG 100V LL SO8FL Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18.4A (Ta), 108A (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 34A, 10V Power Dissipation (Max): 3.8W (Ta), 131W (Tc) Vgs(th) (Max) @ Id: 3V @ 192µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFS005N10MCLT1G | onsemi | MOSFETs PTNG 100V LL SO8FL | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFS005N10MCLT1G | onsemi | Description: PTNG 100V LL SO8FL Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18.4A (Ta), 108A (Tc) Rds On (Max) @ Id, Vgs: 5.1mOhm @ 34A, 10V Power Dissipation (Max): 3.8W (Ta), 131W (Tc) Vgs(th) (Max) @ Id: 3V @ 192µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4100 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFS005N10MCLT1G | ON Semiconductor | Trans MOSFET N-CH 100V 18.4A 5-Pin SO-FL EP T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFS014P04M8LT1G | onsemi | Description: MV8 40V P-CH LL IN S08FL PACKAGE Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 52.1A (Tc) Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V Power Dissipation (Max): 3.6W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 420µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1734 pF @ 20 V Qualification: AEC-Q101 | auf Bestellung 35605 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFS014P04M8LT1G | ON Semiconductor | Trans MOSFET P-CH 40V 12.5A Automotive AEC-Q101 5-Pin SO-FL EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFS014P04M8LT1G | onsemi | Description: MV8 40V P-CH LL IN S08FL PACKAGE Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 1734 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 26.5 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2.4V @ 420µA Power Dissipation (Max): 3.6W (Ta), 60W (Tc) Rds On (Max) @ Id, Vgs: 13.8mOhm @ 15A, 10V Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 52.1A (Tc) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) | auf Bestellung 34500 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFS014P04M8LT1G | onsemi | MOSFETs Power MOSFET, Single P-Channel, -40 V, 13.8 mohm a. -10V, -52.1 A | auf Bestellung 6937 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFS015N10MCLT1G | onsemi | MOSFETs PTNG 100V LL NCH SO-8FL FOR AUTOMOTIVE MARKET | auf Bestellung 510 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFS015N10MCLT1G | ONSEMI | Description: ONSEMI - NVMFS015N10MCLT1G - Leistungs-MOSFET, n-Kanal, 100 V, 47.1 A, 9700 µohm, DFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: Y-EX Dauer-Drainstrom Id: 47.1A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 59.5W Bauform - Transistor: DFN Anzahl der Pins: 5Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 9700µohm SVHC: Lead (27-Jun-2024) | auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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| NVMFS015N10MCLT1G | onsemi | Description: MOSFET N-CH 100V 10.5A/54A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 54A (Tc) Rds On (Max) @ Id, Vgs: 12.2mOhm @ 14A, 10V Power Dissipation (Max): 3W (Ta), 79W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 282µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1338 pF @ 50 V Qualification: AEC-Q101 | auf Bestellung 986 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFS015N10MCLT1G | ONSEMI | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 47.1A; Idm: 259A; 23.8W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 47.1A Pulsed drain current: 259A Power dissipation: 23.8W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 12.2mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFS015N10MCLT1G | ONSEMI | Description: ONSEMI - NVMFS015N10MCLT1G - Leistungs-MOSFET, n-Kanal, 100 V, 47.1 A, 9700 µohm, DFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: Y-EX Dauer-Drainstrom Id: 47.1A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Verlustleistung Pd: 59.5W Gate-Source-Schwellenspannung, max.: 1.5V euEccn: NLR Verlustleistung: 59.5W Bauform - Transistor: DFN Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 5Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Wandlerpolarität: n-Kanal Kanaltyp: n-Kanal Betriebswiderstand, Rds(on): 0.0097ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 9700µohm SVHC: Lead (27-Jun-2024) | auf Bestellung 1500 Stücke: Lieferzeit 14-21 Tag (e) |
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| NVMFS015N10MCLT1G | onsemi | Description: MOSFET N-CH 100V 10.5A/54A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 54A (Tc) Rds On (Max) @ Id, Vgs: 12.2mOhm @ 14A, 10V Power Dissipation (Max): 3W (Ta), 79W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 282µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1338 pF @ 50 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFS016N06CT1G | onsemi | Description: MOSFET N-CH 60V 10A/33A 5DFN Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 489 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 4V @ 25µA Power Dissipation (Max): 3.4W (Ta), 36W (Tc) Rds On (Max) @ Id, Vgs: 15.6mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 33A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFS016N06CT1G | ONSEMI | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 33A; Idm: 226A; 18W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 33A Power dissipation: 18W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 15.6mΩ Mounting: SMD Gate charge: 6.9nC Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 226A | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFS016N06CT1G | ON Semiconductor | auf Bestellung 1480 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NVMFS016N06CT1G | onsemi | Description: MOSFET N-CH 60V 10A/33A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 33A (Tc) Rds On (Max) @ Id, Vgs: 15.6mOhm @ 5A, 10V Power Dissipation (Max): 3.4W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 4V @ 25µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 6.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 489 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 1438 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFS016N06CT1G | onsemi | MOSFETs T6 60V SG HIGHER RDS-ON PORTFOLIO | auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFS016N10MCLT1G | onsemi | Description: PTNG 100V LL SO8FL Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 46A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 11A, 10V Power Dissipation (Max): 3.6W (Ta), 64W (Tc) Vgs(th) (Max) @ Id: 3V @ 64µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFS016N10MCLT1G | onsemi | MOSFETs PTNG 100V LL SO8FL | auf Bestellung 37 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFS016N10MCLT1G | ONSEMI | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 46A; Idm: 243A; 32W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 46A Pulsed drain current: 243A Power dissipation: 32W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 14mΩ Mounting: SMD Gate charge: 19nC Kind of package: reel; tape Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFS016N10MCLT1G | onsemi | Description: PTNG 100V LL SO8FL Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.9A (Ta), 46A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 11A, 10V Power Dissipation (Max): 3.6W (Ta), 64W (Tc) Vgs(th) (Max) @ Id: 3V @ 64µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 50 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFS016N10MCLT1G | ON Semiconductor | Trans MOSFET N-CH 100V 10.9A Automotive 5-Pin SO-FL EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFS020N06C | onsemi | MOSFETs T6 60V SG HIGHER RDS-ON PORTFOLIO | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFS020N06CT1G | onsemi | Description: MOSFET N-CH 60V 9A/28A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 28A (Tc) Rds On (Max) @ Id, Vgs: 19.6mOhm @ 4A, 10V Power Dissipation (Max): 3.4W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 18435 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFS020N06CT1G | onsemi | Description: MOSFET N-CH 60V 9A/28A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 28A (Tc) Rds On (Max) @ Id, Vgs: 19.6mOhm @ 4A, 10V Power Dissipation (Max): 3.4W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 30 V Qualification: AEC-Q101 | auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFS020N06CT1G | onsemi | MOSFETs T6 60V SG HIGHER RDS-ON PORTFOLIO | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFS021N10MCLT1G | onsemi | Description: PTNG 100V LL SO8FL Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 3V @ 42µA Power Dissipation (Max): 3.6W (Ta), 49W (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 31A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Cut Tape (CT) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Qualification: AEC-Q101 Grade: Automotive | auf Bestellung 1286 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFS021N10MCLT1G | onsemi | MOSFETs Single N-Channel Power MOSFET 100 V, 31 A, 23 mohm | auf Bestellung 4452 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVMFS021N10MCLT1G | onsemi | Description: PTNG 100V LL SO8FL Input Capacitance (Ciss) (Max) @ Vds: 850 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Part Status: Active Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 3V @ 42µA Power Dissipation (Max): 3.6W (Ta), 49W (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 31A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Qualification: AEC-Q101 Grade: Automotive | auf Bestellung 680 Stücke: Lieferzeit 10-14 Tag (e) | Mindestbestellmenge: 680 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| NVMFS021N10MCLT1G | ONN | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NVMFS024N06CT1G | ONSEMI | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 158A; 14W; DFN5 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 25A Pulsed drain current: 158A Power dissipation: 14W Case: DFN5 Gate-source voltage: ±20V On-state resistance: 22mΩ Mounting: SMD Gate charge: 5.7nC Kind of package: reel; tape Kind of channel: enhancement | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH |