Produkte > IPD
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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| IPDQ60R065S7XTMA1 | Infineon Technologies | MOSFETs HIGH POWER_NEW | auf Bestellung 739 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDQ60R070CM8XTMA1 | Infineon Technologies | MOSFETs 600V CoolMOS CM8 Power Transistor | auf Bestellung 715 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDQ60R075CFD7XTMA1 | Infineon Technologies | MOSFETs HIGH POWER_NEW | auf Bestellung 91 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDQ60R075CFD7XTMA1 | Infineon Technologies | Description: HIGH POWER_NEW PG-HDSOP-22 Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) Supplier Device Package: PG-HDSOP-22-1 Part Status: Active Drain to Source Voltage (Vdss): 600 V | auf Bestellung 750 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDQ60R075CFD7XTMA1 | Infineon Technologies | Description: HIGH POWER_NEW PG-HDSOP-22 Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) Supplier Device Package: PG-HDSOP-22-1 Part Status: Active Drain to Source Voltage (Vdss): 600 V | auf Bestellung 750 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDQ60T010S7AXTMA1 | INFINEON | Description: INFINEON - IPDQ60T010S7AXTMA1 - Leistungs-MOSFET, n-Kanal, 600 V, 174 A, 0.01 ohm, HDSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 174A hazardous: false rohsPhthalatesCompliant: TBA Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.5V euEccn: NLR Verlustleistung: 694W Bauform - Transistor: HDSOP Anzahl der Pins: 22Pin(s) Produktpalette: CoolMOS SJ S7A Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 12V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.01ohm SVHC: No SVHC (27-Jun-2024) | auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPDQ60T010S7AXTMA1 | Infineon Technologies | Power Device MOSFET | Produkt ist nicht verfügbar | Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPDQ60T010S7AXTMA1 | Infineon Technologies | MOSFETs CoolMOS S7TA with embedded temperature sensor | auf Bestellung 682 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDQ60T010S7XTMA1 | Infineon Technologies | MOSFETs CoolMOS S7T with embedded temperature sensor | auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDQ60T017S7AXTMA1 | Infineon Technologies | Description: AUTOMOTIVE_COOLMOS Packaging: Cut Tape (CT) | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPDQ60T017S7AXTMA1 | Infineon Technologies | MOSFETs AUTOMOTIVE_COOLMOS | auf Bestellung 745 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDQ60T017S7AXTMA1 | Infineon Technologies | Description: AUTOMOTIVE_COOLMOS Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPDQ60T017S7XTMA1 | Infineon Technologies | Description: HIGH POWER_NEW Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 113A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 29A, 12V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.88mA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 300 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPDQ60T017S7XTMA1 | Infineon Technologies | MOSFET HIGH POWER_NEW | auf Bestellung 750 Stücke: Lieferzeit 129-133 Tag (e) |
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| IPDQ60T017S7XTMA1 | Infineon Technologies | Description: HIGH POWER_NEW Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 113A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 29A, 12V Power Dissipation (Max): 500W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.88mA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 196 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 7370 pF @ 300 V | auf Bestellung 68 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDQ60T022S7AXTMA1 | Infineon Technologies | MOSFETs Y | auf Bestellung 750 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDQ60T022S7AXTMA1 | Infineon Technologies | Description: AUTOMOTIVE_COOLMOS Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V Power Dissipation (Max): 416W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.43mA Supplier Device Package: PG-HDSOP-22-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPDQ60T022S7AXTMA1 | INFINEON | Description: INFINEON - IPDQ60T022S7AXTMA1 - Leistungs-MOSFET, n-Kanal, 600 V, 90 A, 0.022 ohm, HDSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 90A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.5V euEccn: NLR Verlustleistung: 416W Bauform - Transistor: HDSOP Anzahl der Pins: 22Pin(s) Produktpalette: CoolMOS SJ S7TA Series productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 12V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.022ohm SVHC: No SVHC (25-Jun-2025) | auf Bestellung 95 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPDQ60T022S7AXTMA1 | INFINEON | Description: INFINEON - IPDQ60T022S7AXTMA1 - Leistungs-MOSFET, n-Kanal, 600 V, 90 A, 0.022 ohm, HDSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 90A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.5V euEccn: NLR Verlustleistung: 416W Bauform - Transistor: HDSOP Anzahl der Pins: 22Pin(s) Produktpalette: CoolMOS SJ S7TA Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 12V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.022ohm SVHC: No SVHC (25-Jun-2025) | auf Bestellung 95 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPDQ60T022S7AXTMA1 | Infineon Technologies | Description: AUTOMOTIVE_COOLMOS Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V Power Dissipation (Max): 416W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.43mA Supplier Device Package: PG-HDSOP-22-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V Qualification: AEC-Q101 | auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDQ60T022S7XTMA1 | Infineon Technologies | Description: HIGH POWER_NEW Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V Power Dissipation (Max): 416W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.43mA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V | auf Bestellung 62 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDQ60T022S7XTMA1 | Infineon Technologies | Description: HIGH POWER_NEW Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 22mOhm @ 23A, 12V Power Dissipation (Max): 416W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.43mA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 150 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 5640 pF @ 300 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPDQ60T040S7AXTMA1 | Infineon Technologies | Description: AUTOMOTIVE_COOLMOS Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V Power Dissipation (Max): 272W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 780µA Supplier Device Package: PG-HDSOP-22-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 3128 pF @ 300 V Qualification: AEC-Q101 | auf Bestellung 750 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDQ60T040S7AXTMA1 | Infineon Technologies | MOSFETs AUTOMOTIVE_COOLMOS | Produkt ist nicht verfügbar | Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPDQ60T040S7AXTMA1 | Infineon Technologies | Description: AUTOMOTIVE_COOLMOS Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 54A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 13A, 12V Power Dissipation (Max): 272W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 780µA Supplier Device Package: PG-HDSOP-22-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 12V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 83 nC @ 12 V Input Capacitance (Ciss) (Max) @ Vds: 3128 pF @ 300 V Qualification: AEC-Q101 | auf Bestellung 750 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDQ65R008CM8XTMA1 | Infineon Technologies | MOSFETs 650V CoolMOS CM8 Power Transistor | auf Bestellung 222 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDQ65R017CFD7AXTMA1 | INFINEON | Description: INFINEON - IPDQ65R017CFD7AXTMA1 - Leistungs-MOSFET, n-Kanal, 650 V, 136 A, 0.017 ohm, HDSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 136A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.5V euEccn: NLR Verlustleistung: 694W Bauform - Transistor: HDSOP Anzahl der Pins: 22Pin(s) Produktpalette: CoolMOS CFD7A SJ Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.017ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPDQ65R017CFD7AXTMA1 | Infineon Technologies | Description: AUTOMOTIVE_COOLMOS Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 136A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 61.6A, 10V Power Dissipation (Max): 694W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 3.08mA Supplier Device Package: PG-HDSOP-22-1 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12338 pF @ 400 V Qualification: AEC-Q101 | auf Bestellung 776 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDQ65R017CFD7AXTMA1 | INFINEON | Description: INFINEON - IPDQ65R017CFD7AXTMA1 - Leistungs-MOSFET, n-Kanal, 650 V, 136 A, 0.017 ohm, HDSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 136A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.5V euEccn: NLR Verlustleistung: 694W Bauform - Transistor: HDSOP Anzahl der Pins: 22Pin(s) Produktpalette: CoolMOS CFD7A SJ Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.017ohm SVHC: No SVHC (27-Jun-2018) | auf Bestellung 200 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPDQ65R017CFD7AXTMA1 | Infineon Technologies | MOSFET | auf Bestellung 200 Stücke: Lieferzeit 150-154 Tag (e) |
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| IPDQ65R017CFD7AXTMA1 | Infineon Technologies | Description: AUTOMOTIVE_COOLMOS Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 136A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 61.6A, 10V Power Dissipation (Max): 694W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 3.08mA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12338 pF @ 400 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 750 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDQ65R017CFD7XTMA1 | Infineon Technologies | Description: HIGH POWER_NEW Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 136A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 61.6A, 10V Power Dissipation (Max): 694W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 3.08mA Supplier Device Package: PG-HDSOP-22-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12338 pF @ 400 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPDQ65R017CFD7XTMA1 | Infineon Technologies | Trans MOSFET N-CH 650V 136A 22-Pin HDSOP EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPDQ65R017CFD7XTMA1 | Infineon Technologies | MOSFETs HIGH POWER_NEW | auf Bestellung 552 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDQ65R017CFD7XTMA1 | Infineon Technologies | Description: HIGH POWER_NEW Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 136A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 61.6A, 10V Power Dissipation (Max): 694W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 3.08mA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 236 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12338 pF @ 400 V | auf Bestellung 627 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDQ65R018CM8XTMA1 | Infineon Technologies | Description: IPDQ65R018CM8XTMA1 Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 127A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 55.6A, 10V Power Dissipation (Max): 625W (Tc) Vgs(th) (Max) @ Id: 4.7V @ 1.48mA Supplier Device Package: PG-HDSOP-22 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8290 pF @ 400 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPDQ65R018CM8XTMA1 | Infineon Technologies | Description: IPDQ65R018CM8XTMA1 Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 127A (Tc) Rds On (Max) @ Id, Vgs: 18mOhm @ 55.6A, 10V Power Dissipation (Max): 625W (Tc) Vgs(th) (Max) @ Id: 4.7V @ 1.48mA Supplier Device Package: PG-HDSOP-22 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 173 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8290 pF @ 400 V | auf Bestellung 548 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDQ65R018CM8XTMA1 | Infineon Technologies | MOSFETs 650V CoolMOS CM8 Power Transistor | auf Bestellung 663 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDQ65R029CFD7AXTMA1 | Infineon Technologies | Description: AUTOMOTIVE_COOLMOS Packaging: Cut Tape (CT) Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 22-PowerBSOP Module Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: PG-HDSOP-22-1 Vgs(th) (Max) @ Id: 4.5V @ 1.79mA Power Dissipation (Max): 463W (Tc) | auf Bestellung 740 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDQ65R029CFD7AXTMA1 | Infineon Technologies | Description: AUTOMOTIVE_COOLMOS Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Grade: Automotive Supplier Device Package: PG-HDSOP-22-1 Vgs(th) (Max) @ Id: 4.5V @ 1.79mA Power Dissipation (Max): 463W (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V Current - Continuous Drain (Id) @ 25°C: 85A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 22-PowerBSOP Module | Produkt ist nicht verfügbar | Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPDQ65R029CFD7AXTMA1 | Infineon Technologies | MOSFETs Y | auf Bestellung 750 Stücke: Lieferzeit 150-154 Tag (e) |
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| IPDQ65R029CFD7XTMA1 | Infineon Technologies | MOSFETs HIGH POWER_NEW | auf Bestellung 759 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDQ65R029CFD7XTMA1 | Infineon Technologies | Description: HIGH POWER_NEW Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V Power Dissipation (Max): 463W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.79mA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V | auf Bestellung 734 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDQ65R029CFD7XTMA1 | Infineon Technologies | Description: HIGH POWER_NEW Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 85A (Tc) Rds On (Max) @ Id, Vgs: 29mOhm @ 35.8A, 10V Power Dissipation (Max): 463W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.79mA Supplier Device Package: PG-HDSOP-22-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7149 pF @ 400 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPDQ65R029CFD7XTMA1 | Infineon Technologies | Trans MOSFET N-CH 700V 85A 22-Pin HDSOP EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPDQ65R040CFD7 | Infineon Technologies | HIGH POWER_NEW | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPDQ65R040CFD7AXTMA1 | INFINEON | Description: INFINEON - IPDQ65R040CFD7AXTMA1 - Leistungs-MOSFET, n-Kanal, 650 V, 64 A, 0.04 ohm, HDSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 64A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N Gate-Source-Schwellenspannung, max.: 4.5V Verlustleistung: 357W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: HDSOP Anzahl der Pins: 22Pin(s) Produktpalette: CoolMOS CFD7A SJ Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.04ohm | auf Bestellung 740 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPDQ65R040CFD7AXTMA1 | Infineon Technologies | MOSFETs AUTOMOTIVE_COOLMOS | auf Bestellung 955 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDQ65R040CFD7AXTMA1 | Infineon Technologies | Trans MOSFET N-CH 650V 64A 22-Pin HDSOP EP T/R Automotive AEC-Q101 | auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) | Mindestbestellmenge: 3 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPDQ65R040CFD7AXTMA1 | Infineon Technologies | Description: AUTOMOTIVE_COOLMOS Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-HDSOP-22-1 Vgs(th) (Max) @ Id: 4.5V @ 1.24mA Power Dissipation (Max): 357W (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 24.8A, 10V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 22-PowerBSOP Module Packaging: Cut Tape (CT) | auf Bestellung 56 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDQ65R040CFD7AXTMA1 | Infineon Technologies | Trans MOSFET N-CH 650V 64A 22-Pin HDSOP EP T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPDQ65R040CFD7AXTMA1 | INFINEON | Description: INFINEON - IPDQ65R040CFD7AXTMA1 - Leistungs-MOSFET, n-Kanal, 650 V, 64 A, 0.04 ohm, HDSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 64A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y Gate-Source-Schwellenspannung, max.: 4.5V Verlustleistung: 357W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: HDSOP Anzahl der Pins: 22Pin(s) Produktpalette: CoolMOS CFD7A SJ Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.04ohm | auf Bestellung 740 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPDQ65R040CFD7AXTMA1 | Infineon Technologies | Description: AUTOMOTIVE_COOLMOS Rds On (Max) @ Id, Vgs: 40mOhm @ 24.8A, 10V Current - Continuous Drain (Id) @ 25°C: 64A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 22-PowerBSOP Module Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-HDSOP-22-1 Vgs(th) (Max) @ Id: 4.5V @ 1.24mA Power Dissipation (Max): 357W (Tc) | Produkt ist nicht verfügbar | Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPDQ65R040CFD7AXTMA1 | Infineon Technologies | Trans MOSFET N-CH 650V 64A 22-Pin HDSOP EP T/R Automotive AEC-Q101 | auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPDQ65R040CFD7XTMA1 | Infineon Technologies | Description: HIGH POWER_NEW Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 24.8A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.24mA Supplier Device Package: PG-HDSOP-22-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPDQ65R040CFD7XTMA1 | INFINEON | Description: INFINEON - IPDQ65R040CFD7XTMA1 - Leistungs-MOSFET, n-Kanal, 650 V, 64 A, 0.034 ohm, HDSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 64A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N Gate-Source-Schwellenspannung, max.: 4.5V Verlustleistung: 357W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: HDSOP Anzahl der Pins: 22Pin(s) Produktpalette: CoolMOS CFD7 SJ Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.034ohm | auf Bestellung 735 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPDQ65R040CFD7XTMA1 | Infineon Technologies | Description: HIGH POWER_NEW Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 24.8A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 1.24mA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 97 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4975 pF @ 400 V | auf Bestellung 712 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDQ65R040CFD7XTMA1 | Infineon Technologies | MOSFETs HIGH POWER_NEW | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPDQ65R040CFD7XTMA1 | INFINEON | Description: INFINEON - IPDQ65R040CFD7XTMA1 - Leistungs-MOSFET, n-Kanal, 650 V, 64 A, 0.034 ohm, HDSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage euEccn: NLR Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 64A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Source-Schwellenspannung, max.: 4.5V Verlustleistung: 357W SVHC: No SVHC (25-Jun-2025) Bauform - Transistor: HDSOP Anzahl der Pins: 22Pin(s) Produktpalette: CoolMOS CFD7 SJ Series productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 150°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.034ohm | auf Bestellung 735 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPDQ65R060CFD7AXTMA1 | Infineon Technologies | Description: AUTOMOTIVE_COOLMOS Supplier Device Package: PG-HDSOP-22-1 Vgs(th) (Max) @ Id: 4.5V @ 820µA Power Dissipation (Max): 272W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 22-PowerBSOP Module Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V | Produkt ist nicht verfügbar | Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPDQ65R060CFD7AXTMA1 | Infineon Technologies | MOSFET AUTOMOTIVE_COOLMOS | auf Bestellung 500 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDQ65R060CFD7AXTMA1 | Infineon Technologies | Description: AUTOMOTIVE_COOLMOS Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-HDSOP-22-1 Vgs(th) (Max) @ Id: 4.5V @ 820µA Qualification: AEC-Q101 Grade: Automotive Power Dissipation (Max): 272W (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V Current - Continuous Drain (Id) @ 25°C: 45A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 22-PowerBSOP Module Packaging: Cut Tape (CT) | auf Bestellung 340 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDQ65R060CFD7XTMA1 | Infineon Technologies | MOSFET | auf Bestellung 750 Stücke: Lieferzeit 209-213 Tag (e) |
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| IPDQ65R060CFD7XTMA1 | Infineon Technologies | Description: HIGH POWER_NEW Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V Power Dissipation (Max): 272W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 820µA Supplier Device Package: PG-HDSOP-22-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPDQ65R060CFD7XTMA1 | Infineon Technologies | Description: HIGH POWER_NEW Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Tc) Rds On (Max) @ Id, Vgs: 60mOhm @ 16.4A, 10V Power Dissipation (Max): 272W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 820µA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3288 pF @ 400 V | auf Bestellung 730 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDQ65R080CFD7 | Infineon Technologies | HIGH POWER_NEW | Produkt ist nicht verfügbar | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPDQ65R080CFD7AXTMA1 | INFINEON | Description: INFINEON - IPDQ65R080CFD7AXTMA1 - Leistungs-MOSFET, n-Kanal, 650 V, 36 A, 0.08 ohm, HDSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 36A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: N usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.5V euEccn: NLR Verlustleistung: 223W Bauform - Transistor: HDSOP Anzahl der Pins: 22Pin(s) Produktpalette: CoolMOS CFD7A SJ Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.08ohm SVHC: No SVHC (25-Jun-2025) | auf Bestellung 716 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPDQ65R080CFD7AXTMA1 | Infineon Technologies | Trans MOSFET N-CH 650V 36A 22-Pin HDSOP EP T/R Automotive AEC-Q101 | auf Bestellung 660 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPDQ65R080CFD7AXTMA1 | Infineon Technologies | Description: AUTOMOTIVE_COOLMOS Rds On (Max) @ Id, Vgs: 80mOhm @ 12.5A, 10V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 22-PowerBSOP Module Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-HDSOP-22-1 Vgs(th) (Max) @ Id: 4.5V @ 630µA Power Dissipation (Max): 223W (Tc) Qualification: AEC-Q101 Grade: Automotive | auf Bestellung 343 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDQ65R080CFD7AXTMA1 | Infineon Technologies | MOSFETs AUTOMOTIVE_COOLMOS | auf Bestellung 61 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDQ65R080CFD7AXTMA1 | Infineon Technologies | Trans MOSFET N-CH 650V 36A 22-Pin HDSOP EP T/R Automotive AEC-Q101 | auf Bestellung 660 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPDQ65R080CFD7AXTMA1 | INFINEON | Description: INFINEON - IPDQ65R080CFD7AXTMA1 - Leistungs-MOSFET, n-Kanal, 650 V, 36 A, 0.08 ohm, HDSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 36A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.5V euEccn: NLR Verlustleistung: 223W Bauform - Transistor: HDSOP Anzahl der Pins: 22Pin(s) Produktpalette: CoolMOS CFD7A SJ Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.08ohm SVHC: No SVHC (25-Jun-2025) | auf Bestellung 716 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPDQ65R080CFD7AXTMA1 | Infineon Technologies | Description: AUTOMOTIVE_COOLMOS Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-HDSOP-22-1 Vgs(th) (Max) @ Id: 4.5V @ 630µA Power Dissipation (Max): 223W (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 12.5A, 10V Current - Continuous Drain (Id) @ 25°C: 36A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Qualification: AEC-Q101 Grade: Automotive Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 22-PowerBSOP Module Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPDQ65R080CFD7AXTMA1 | Infineon Technologies | Trans MOSFET N-CH 650V 36A 22-Pin HDSOP EP T/R Automotive AEC-Q101 | auf Bestellung 599 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPDQ65R080CFD7AXTMA1 | Infineon Technologies | Trans MOSFET N-CH 650V 36A 22-Pin HDSOP EP T/R Automotive AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPDQ65R080CFD7XTMA1 | Infineon Technologies | Trans MOSFET N-CH 650V 36A 22-Pin HDSOP EP T/R | auf Bestellung 3604 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPDQ65R080CFD7XTMA1 | Infineon Technologies | Trans MOSFET N-CH 650V 36A 22-Pin HDSOP EP T/R | auf Bestellung 70 Stücke: Lieferzeit 14-21 Tag (e) | Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPDQ65R080CFD7XTMA1 | INFINEON | Description: INFINEON - IPDQ65R080CFD7XTMA1 - Leistungs-MOSFET, n-Kanal, 650 V, 36 A, 0.068 ohm, HDSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 36A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.5V euEccn: NLR Verlustleistung: 223W Bauform - Transistor: HDSOP Anzahl der Pins: 22Pin(s) Produktpalette: CoolMOS CFD7 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.068ohm SVHC: No SVHC (25-Jun-2025) | auf Bestellung 750 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPDQ65R080CFD7XTMA1 | Infineon Technologies | Description: HIGH POWER_NEW Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 12.5A, 10V Power Dissipation (Max): 223W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 630µA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V | auf Bestellung 750 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDQ65R080CFD7XTMA1 | Infineon Technologies | Trans MOSFET N-CH 650V 36A 22-Pin HDSOP EP T/R | auf Bestellung 70 Stücke: Lieferzeit 14-21 Tag (e) | Mindestbestellmenge: 6 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPDQ65R080CFD7XTMA1 | Infineon Technologies | Trans MOSFET N-CH 650V 36A 22-Pin HDSOP EP T/R | Produkt ist nicht verfügbar | Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPDQ65R080CFD7XTMA1 | INFINEON | Description: INFINEON - IPDQ65R080CFD7XTMA1 - Leistungs-MOSFET, n-Kanal, 650 V, 36 A, 0.068 ohm, HDSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 36A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: N usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.5V euEccn: NLR Verlustleistung: 223W Bauform - Transistor: HDSOP Anzahl der Pins: 22Pin(s) Produktpalette: CoolMOS CFD7 Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.068ohm SVHC: No SVHC (25-Jun-2025) | auf Bestellung 750 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPDQ65R080CFD7XTMA1 | Infineon Technologies | Description: HIGH POWER_NEW Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 36A (Tc) Rds On (Max) @ Id, Vgs: 80mOhm @ 12.5A, 10V Power Dissipation (Max): 223W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 630µA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2513 pF @ 400 V | auf Bestellung 750 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDQ65R080CFD7XTMA1 | Infineon Technologies | MOSFETs HIGH POWER_NEW | auf Bestellung 76 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDQ65R099CFD7AXTMA1 | INFINEON TECHNOLOGIES | Category: SMD N channel transistors Description: Transistor: N-MOSFET; 650V; 29A; 186W; automotive industry Type of transistor: N-MOSFET Drain-source voltage: 650V Drain current: 29A Power dissipation: 186W Gate-source voltage: 20V On-state resistance: 99mΩ Mounting: SMD Gate charge: 39nC Kind of channel: enhancement Application: automotive industry | auf Bestellung 750 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPDQ65R099CFD7AXTMA1 | Infineon Technologies | MOSFETs AUTOMOTIVE_COOLMOS | Produkt ist nicht verfügbar | Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPDQ65R099CFD7AXTMA1 | INFINEON | Description: INFINEON - IPDQ65R099CFD7AXTMA1 - Leistungs-MOSFET, n-Kanal, 650 V, 29 A, 0.099 ohm, HDSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 29A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.5V euEccn: NLR Verlustleistung: 186W Bauform - Transistor: HDSOP Anzahl der Pins: 22Pin(s) Produktpalette: CoolMOS CFD7A SJ Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.099ohm SVHC: No SVHC (21-Jan-2025) | auf Bestellung 728 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPDQ65R099CFD7AXTMA1 | Infineon Technologies | Description: AUTOMOTIVE_COOLMOS Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V Power Dissipation (Max): 186W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 480µA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 440 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDQ65R099CFD7AXTMA1 | INFINEON | Description: INFINEON - IPDQ65R099CFD7AXTMA1 - Leistungs-MOSFET, n-Kanal, 650 V, 29 A, 0.099 ohm, HDSOP, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 650V rohsCompliant: YES Dauer-Drainstrom Id: 29A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 isCanonical: Y usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.5V euEccn: NLR Verlustleistung: 186W Bauform - Transistor: HDSOP Anzahl der Pins: 22Pin(s) Produktpalette: CoolMOS CFD7A SJ Series productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.099ohm SVHC: No SVHC (21-Jan-2025) | auf Bestellung 728 Stücke: Lieferzeit 14-21 Tag (e) |
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| IPDQ65R099CFD7AXTMA1 | Infineon Technologies | Description: AUTOMOTIVE_COOLMOS Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V Power Dissipation (Max): 186W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 480µA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPDQ65R099CFD7XTMA1 | Infineon Technologies | MOSFETs HIGH POWER_NEW | Produkt ist nicht verfügbar | Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPDQ65R099CFD7XTMA1 | Infineon Technologies | Description: HIGH POWER_NEW Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V Power Dissipation (Max): 186W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 480µA Supplier Device Package: PG-HDSOP-22-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPDQ65R099CFD7XTMA1 | Infineon Technologies | Description: HIGH POWER_NEW Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 99mOhm @ 9.7A, 10V Power Dissipation (Max): 186W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 480µA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1942 pF @ 400 V | auf Bestellung 209 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDQ65R125CFD7AXTMA1 | Infineon Technologies | Description: AUTOMOTIVE_COOLMOS Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-HDSOP-22-1 Vgs(th) (Max) @ Id: 4.5V @ 390µA Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 22-PowerBSOP Module Packaging: Tape & Reel (TR) Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPDQ65R125CFD7AXTMA1 | Infineon Technologies | MOSFETs AUTOMOTIVE_COOLMOS | auf Bestellung 490 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDQ65R125CFD7AXTMA1 | Infineon Technologies | Description: AUTOMOTIVE_COOLMOS Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 400 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Drain to Source Voltage (Vdss): 650 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: PG-HDSOP-22-1 Vgs(th) (Max) @ Id: 4.5V @ 390µA Power Dissipation (Max): 160W (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 22-PowerBSOP Module | auf Bestellung 384 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDQ65R125CFD7XTMA1 | Infineon Technologies | Description: HIGH POWER_NEW Packaging: Cut Tape (CT) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 390µA Supplier Device Package: PG-HDSOP-22-1 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 400 V | auf Bestellung 630 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDQ65R125CFD7XTMA1 | Infineon Technologies | MOSFETs HIGH POWER_NEW | auf Bestellung 790 Stücke: Lieferzeit 10-14 Tag (e) |
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| IPDQ65R125CFD7XTMA1 | Infineon Technologies | Description: HIGH POWER_NEW Packaging: Tape & Reel (TR) Package / Case: 22-PowerBSOP Module Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 7.8A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 390µA Supplier Device Package: PG-HDSOP-22-1 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1566 pF @ 400 V | Produkt ist nicht verfügbar | Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| IPDSB-09-FWL-1M | Sure-Seal | Description: CABLE ASSY DB09 BLACK 1M Packaging: Box Contact Finish: Gold Color: Black, Individual (Round) Length: 3.28' (1.00m) Shielding: Unshielded Number of Positions: 9 Type: DB9 1st Connector: Receptacle, Female Sockets 2nd Connector: Individual Wire Leads Part Status: Active | auf Bestellung 277 Stücke: Lieferzeit 10-14 Tag (e) |
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