Produkte > AOB
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||||
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| AOB-IBRS232 | Amulet Technologies LLC | Description: BOARD INTERFACE ONBOARD RS232 | Produkt ist nicht verfügbar | |||||||||||||||
| AOB003A | SRA Soldering Products | Description: REPLACEMENT SOLDERING IRON 968A+ Packaging: Bag For Use With/Related Products: 968A+, 701A+ Voltage - Input: 24V Type: Iron Tip Type: Included, Not Specified Workstand: Not Included Part Status: Active | auf Bestellung 16 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOB003B | SRA Soldering Products | Description: REPLACEMENT SOLDERING IRON AOYUE Packaging: Bag For Use With/Related Products: 968A+, 701A+ Voltage - Input: 24V Type: Iron Tip Type: Included, Not Specified Workstand: Not Included Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||
| AOB012 | SRA Soldering Products | Description: REPLACEMENT SOLDERING IRON AOYUE Packaging: Bag For Use With/Related Products: 2702, 2702A+, 2703A+ Voltage - Input: 24V Type: Iron Tip Type: Not Included Workstand: Not Included Part Status: Active | auf Bestellung 10 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOB016 | SRA Soldering Products | Description: REPLACEMENT SOLDERING IRON FOR T Packaging: Bag For Use With/Related Products: 702A+, 866, 888A, 9378 Voltage - Input: 24V Type: Iron Tip Type: Included, Not Specified Workstand: Not Included Part Status: Active | auf Bestellung 6 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOB028-P | SRA Soldering Products | Description: SPARE IRON FOR 9378 PRO Packaging: Retail Package For Use With/Related Products: 9378 Pro Series Voltage - Input: 24V Type: Iron Part Status: Active | auf Bestellung 2 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOB033-P | SRA Soldering Products | Description: REPLACEMENT SOLDERING IRON WITH Packaging: Bag Features: LED Indicator For Use With/Related Products: 9378 Pro Voltage - Input: 24V Type: Iron Tip Type: Included, Not Specified Workstand: Not Included Part Status: Active | auf Bestellung 7 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOB034-P | SRA Soldering Products | Description: REPLACEMENT SOLDERING IRON FOR W Packaging: Bag For Use With/Related Products: WQ Tips, 9378 Pro Voltage - Input: 24V Type: Iron Tip Type: Not Included Workstand: Not Included Part Status: Active | auf Bestellung 1 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOB0408AA | FreeWave Technologies | Description: DIN RAIL MOUNT BRACKET ASSEMBLY Packaging: Box | Produkt ist nicht verfügbar | |||||||||||||||
| AOB095A60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 38A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 19A, 10V Power Dissipation (Max): 378W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4010 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB095A60L | Alpha & Omega Semiconductor | N Channel Power Transistor | Produkt ist nicht verfügbar | |||||||||||||||
| AOB095A60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 38A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 95mOhm @ 19A, 10V Power Dissipation (Max): 378W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4010 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB10B60D | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 20A 163W 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| AOB10B60D | Alpha & Omega Semiconductor Inc. | Description: IGBT 600V 20A 163W TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 105 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 10A Supplier Device Package: TO-263 (D2Pak) Td (on/off) @ 25°C: 10ns/72ns Switching Energy: 260µJ (on), 70µJ (off) Test Condition: 400V, 10A, 30Ohm, 15V Gate Charge: 17.4 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 20 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 40 A Power - Max: 163 W | Produkt ist nicht verfügbar | |||||||||||||||
| AOB10B60D | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 20A 163000mW 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| AOB10B65M1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 650V 10A TO263 | Produkt ist nicht verfügbar | |||||||||||||||
| AOB10B65M1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 650V 20A 150000mW 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| AOB10B65M1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 650V 10A TO263 | Produkt ist nicht verfügbar | |||||||||||||||
| AOB10B65M1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 650V 20A 150000mW 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| AOB10N60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 10A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB10N60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 10A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 5A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1600 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB10T60PL | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 10A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 700mOhm @ 5A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1595 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB10T60PL | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 10A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 700mOhm @ 5A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1595 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB1100L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 100V 8A/130A TO263 | Produkt ist nicht verfügbar | |||||||||||||||
| AOB1100L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 100V 130A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| AOB1100L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 100V 130A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| AOB1100L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 100V 8A/130A TO263 | Produkt ist nicht verfügbar | |||||||||||||||
| AOB11C60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 11A TO263 | Produkt ist nicht verfügbar | |||||||||||||||
| AOB11N60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 11A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 700mOhm @ 5.5A, 10V Power Dissipation (Max): 272W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB11N60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 11A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 700mOhm @ 5.5A, 10V Power Dissipation (Max): 272W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB11N60L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| AOB11S60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 11A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 399mOhm @ 3.8A, 10V Power Dissipation (Max): 178W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB11S60L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| AOB11S60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 11A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 399mOhm @ 3.8A, 10V Power Dissipation (Max): 178W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 545 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB11S60L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 11A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| AOB11S65L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 650V 11A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 399mOhm @ 5.5A, 10V Power Dissipation (Max): 198W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB11S65L | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 8A; 198W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Power dissipation: 198W Case: TO263 Gate-source voltage: ±30V On-state resistance: 1.11Ω Mounting: SMD Gate charge: 13.2nC Kind of channel: enhanced | auf Bestellung 773 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOB11S65L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 650V 11A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| AOB11S65L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 650V 11A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 399mOhm @ 5.5A, 10V Power Dissipation (Max): 198W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 13.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 646 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB11S65L | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 8A; 198W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 8A Power dissipation: 198W Case: TO263 Gate-source voltage: ±30V On-state resistance: 1.11Ω Mounting: SMD Gate charge: 13.2nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 773 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOB125A60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 28A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 14A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2993 pF @ 100 V | auf Bestellung 1269 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOB125A60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 28A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Tc) Rds On (Max) @ Id, Vgs: 125mOhm @ 14A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2993 pF @ 100 V | auf Bestellung 800 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOB125A60L | Alpha & Omega Semiconductor | N Channel Power Transistor | Produkt ist nicht verfügbar | |||||||||||||||
| AOB12N50L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 500V 12A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| AOB12N50L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 500V 12A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1633 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB12N60FDL | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 12A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB12N60FDL | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 12A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2010 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB12N65L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 650V 12A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 720mOhm @ 6A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V | auf Bestellung 800 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOB12N65L | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 7.7A; 40W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 7.7A Power dissipation: 40W Case: TO263 Gate-source voltage: ±30V On-state resistance: 720mΩ Mounting: SMD Gate charge: 39.8nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 795 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOB12N65L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 650V 12A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 720mOhm @ 6A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 25 V | auf Bestellung 1097 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOB12N65L | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 7.7A; 40W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 7.7A Power dissipation: 40W Case: TO263 Gate-source voltage: ±30V On-state resistance: 720mΩ Mounting: SMD Gate charge: 39.8nC Kind of channel: enhanced | auf Bestellung 795 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOB12N65L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 650V 12A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| AOB12T60PL | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 12A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 520mOhm @ 6A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2028 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB1404L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 40V 15A/220A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 220A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 417W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB1404L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 40V 15A/220A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 220A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 417W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB14N50 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 500V 14A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 263200 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOB14N50 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 500V 14A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2297 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB14N50 | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 278W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 11A Power dissipation: 278W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 51nC Kind of channel: enhanced | auf Bestellung 46 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOB14N50 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 500V 14A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 263200 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOB14N50 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 500V 14A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 141600 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| AOB14N50 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 500V 14A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 7A, 10V Power Dissipation (Max): 278W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2297 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB14N50 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 500V 14A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| AOB14N50 | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 11A; 278W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Drain current: 11A Power dissipation: 278W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.38Ω Mounting: SMD Gate charge: 51nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 46 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOB14N50L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 500V 14A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| AOB14N50L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 500V 14A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOB14N50L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 500V 14A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOB15B60D | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 30A 167000mW 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| AOB15B60D | Alpha & Omega Semiconductor Inc. | Description: IGBT 600V 30A 167W TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 196 ns Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 15A Supplier Device Package: TO-263 (D2Pak) Td (on/off) @ 25°C: 21ns/73ns Switching Energy: 420µJ (on), 110µJ (off) Test Condition: 400V, 15A, 20Ohm, 15V Gate Charge: 25.4 nC Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 60 A Power - Max: 167 W | Produkt ist nicht verfügbar | |||||||||||||||
| AOB15B65M1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 650V 30A 214mW 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| AOB15B65M1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 650V 30A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 317 ns Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 15A Supplier Device Package: TO-263 (D2Pak) Td (on/off) @ 25°C: 13ns/116ns Switching Energy: 290µJ (on), 200µJ (off) Test Condition: 400V, 15A, 20Ohm, 15V Gate Charge: 32 nC Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 45 A Power - Max: 214 W | Produkt ist nicht verfügbar | |||||||||||||||
| AOB15B65M1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 650V 30A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 317 ns Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 15A Supplier Device Package: TO-263 (D2Pak) Td (on/off) @ 25°C: 13ns/116ns Switching Energy: 290µJ (on), 200µJ (off) Test Condition: 400V, 15A, 20Ohm, 15V Gate Charge: 32 nC Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 45 A Power - Max: 214 W | Produkt ist nicht verfügbar | |||||||||||||||
| AOB15B65MQ1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 15A Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 106 ns Vce(on) (Max) @ Vge, Ic: 2.15V @ 15V, 15A Supplier Device Package: TO-263 (D2Pak) Td (on/off) @ 25°C: 15ns/94ns Switching Energy: 290µJ (on), 200µJ (off) Test Condition: 400V, 15A, 20Ohm, 15V Gate Charge: 32 nC Current - Collector (Ic) (Max): 30 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 45 A Power - Max: 214 W | Produkt ist nicht verfügbar | |||||||||||||||
| AOB15B65MQ1 | Alpha & Omega Semiconductor | Alpha IGBT and Soft and Fast Recovery Anti-Parallel Diode | Produkt ist nicht verfügbar | |||||||||||||||
| AOB15S60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 15A TO263 Packaging: Tape & Reel (TR) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 15.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 717 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB15S60L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 15A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| AOB15S65L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 650V 15A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 841 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB15S65L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 650V 15A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| AOB15S65L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 650V 15A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 7.5A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 17.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 841 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB1606L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 60V 178A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| AOB1606L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 60V 12A/178A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 178A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 417W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB1606L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 60V 12A/178A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 178A (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 417W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4500 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB1608L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 60V 11A TO263 | Produkt ist nicht verfügbar | |||||||||||||||
| AOB1608L | ALPHA & OMEGA SEMICONDUCTOR | AOB1608L SMD N channel transistors | auf Bestellung 844 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOB1608L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 60V 11A TO263 | Produkt ist nicht verfügbar | |||||||||||||||
| AOB160A60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 24A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 12A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB160A60L | Alpha & Omega Semiconductor | N Channel Power Transistor | Produkt ist nicht verfügbar | |||||||||||||||
| AOB160A60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 24A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 12A, 10V Power Dissipation (Max): 250W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2340 pF @ 100 V | auf Bestellung 755 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOB190A60CL | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 20A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.6A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V | auf Bestellung 1952 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOB190A60CL | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 70A; 208W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 70A Power dissipation: 208W Case: TO263 Gate-source voltage: ±20V On-state resistance: 0.19Ω Gate charge: 34nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| AOB190A60CL | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 20A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.6A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V | auf Bestellung 800 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOB190A60CL | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12A; Idm: 70A; 208W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Pulsed drain current: 70A Power dissipation: 208W Case: TO263 Gate-source voltage: ±20V On-state resistance: 0.19Ω Gate charge: 34nC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| AOB190A60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 20A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.6A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB190A60L | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 208W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Power dissipation: 208W Case: TO263 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 34nC Kind of channel: enhanced | auf Bestellung 41 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOB190A60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 20A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 7.6A, 10V Power Dissipation (Max): 208W (Tc) Vgs(th) (Max) @ Id: 4.6V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1935 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB190A60L | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 12A; 208W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 12A Power dissipation: 208W Case: TO263 Gate-source voltage: ±20V On-state resistance: 0.19Ω Mounting: SMD Gate charge: 34nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 41 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOB20B65M1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 650V 40A 227000mW 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| AOB20C60 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 20A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V Power Dissipation (Max): 463W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB20C60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 20A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 250mOhm @ 10A, 10V Power Dissipation (Max): 463W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3440 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB20C60L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 20A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| AOB20C60PL | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 20A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V Power Dissipation (Max): 463W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3607 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB20C60PL | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 20A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 10A, 10V Power Dissipation (Max): 463W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3607 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB20S60 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 20A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| AOB20S60L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 20A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| AOB20S60L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 20A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| AOB20S60L | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 80A; 266W; TO263 Case: TO263 Gate charge: 19.8nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 80A Drain-source voltage: 600V Drain current: 14A On-state resistance: 530mΩ Type of transistor: N-MOSFET Power dissipation: 266W Polarisation: unipolar | Produkt ist nicht verfügbar | |||||||||||||||
| AOB20S60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 20A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V Power Dissipation (Max): 266W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 19.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1038 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB20S60L | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 14A; Idm: 80A; 266W; TO263 Case: TO263 Gate charge: 19.8nC Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 80A Drain-source voltage: 600V Drain current: 14A On-state resistance: 530mΩ Type of transistor: N-MOSFET Power dissipation: 266W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| AOB20S60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 20A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 199mOhm @ 10A, 10V Power Dissipation (Max): 266W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 19.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1038 pF @ 100 V | auf Bestellung 788 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOB210L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 30V 20A/105A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 105A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V Power Dissipation (Max): 1.9W (Ta), 176W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB210L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 30V 105A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| AOB210L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 30V 20A/105A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 105A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V Power Dissipation (Max): 1.9W (Ta), 176W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 15 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB2140L | Alpha & Omega Semiconductor | 40V N-Channel AlphaSGT TM | Produkt ist nicht verfügbar | |||||||||||||||
| AOB2140L | Alpha & Omega Semiconductor Inc. | Description: N Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 57A (Ta), 195A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 20A, 10V Power Dissipation (Max): 8.3W (Ta), 272W (Tc) Vgs(th) (Max) @ Id: 2.3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9985 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB2144L | Alpha & Omega Semiconductor Inc. | Description: N Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 205A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V Power Dissipation (Max): 8.3W (Ta), 187W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5225 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB2144L | Alpha & Omega Semiconductor | N-Channel MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| AOB2146L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 40V 42A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| AOB2146L | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 47.5W; TO263 Mounting: SMD Power dissipation: 47.5W Polarisation: unipolar Gate charge: 20nC Kind of channel: enhanced Gate-source voltage: ±20V Case: TO263 Drain-source voltage: 40V Drain current: 100A On-state resistance: 2.8mΩ Type of transistor: N-MOSFET | auf Bestellung 101 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOB2146L | Alpha & Omega Semiconductor Inc. | Description: N Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 105A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V Power Dissipation (Max): 8.3W (Ta), 119W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3830 pF @ 20 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB2146L | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 100A; 47.5W; TO263 Mounting: SMD Power dissipation: 47.5W Polarisation: unipolar Gate charge: 20nC Kind of channel: enhanced Gate-source voltage: ±20V Case: TO263 Drain-source voltage: 40V Drain current: 100A On-state resistance: 2.8mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke | auf Bestellung 101 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOB240L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 40V 105A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| AOB240L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 40V 105A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| AOB240L | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 82A; 176W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 82A Power dissipation: 176W Case: TO263 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 22nC Kind of channel: enhanced | auf Bestellung 785 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOB240L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 40V 20A/105A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 105A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V Power Dissipation (Max): 1.9W (Ta), 176W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3510 pF @ 20 V | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOB240L | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 82A; 176W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 40V Drain current: 82A Power dissipation: 176W Case: TO263 Gate-source voltage: ±20V On-state resistance: 2.6mΩ Mounting: SMD Gate charge: 22nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 785 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOB240L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 40V 105A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| AOB240L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 40V 20A/105A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 105A (Tc) Rds On (Max) @ Id, Vgs: 2.6mOhm @ 20A, 10V Power Dissipation (Max): 1.9W (Ta), 176W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3510 pF @ 20 V | auf Bestellung 4559 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOB2500L | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 107A; 375W; TO263 Mounting: SMD Power dissipation: 375W Polarisation: unipolar Gate charge: 97nC Kind of channel: enhanced Gate-source voltage: ±20V Case: TO263 Drain-source voltage: 150V Drain current: 107A On-state resistance: 6.2mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke | auf Bestellung 518 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOB2500L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 150V 11.5/152A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 152A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 75 V | auf Bestellung 8663 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOB2500L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 150V 152A 3-Pin(2+Tab) D2PAK | auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOB2500L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 150V 11.5/152A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 152A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 136 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 75 V | auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOB2500L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 150V 152A 3-Pin(2+Tab) D2PAK | auf Bestellung 18400 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| AOB2500L | ALPHA&OMEGA | Transistor N-Channel MOSFET; 150V; 20V; 12,3mOhm; 152A; 375W; -55°C ~ 175°C; AOB2500L TAOB2500l Anzahl je Verpackung: 5 Stücke | auf Bestellung 4 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOB2500L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 150V 152A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| AOB2500L | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 107A; 375W; TO263 Mounting: SMD Power dissipation: 375W Polarisation: unipolar Gate charge: 97nC Kind of channel: enhanced Gate-source voltage: ±20V Case: TO263 Drain-source voltage: 150V Drain current: 107A On-state resistance: 6.2mΩ Type of transistor: N-MOSFET | auf Bestellung 518 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOB2500L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 150V 152A 3-Pin(2+Tab) D2PAK | auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOB2502L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 150V 106A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| AOB2502L | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 67A; 111W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 67A Power dissipation: 111W Case: TO263 Gate-source voltage: ±20V On-state resistance: 10.7mΩ Mounting: SMD Gate charge: 43nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 65 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOB2502L | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 67A; 111W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 67A Power dissipation: 111W Case: TO263 Gate-source voltage: ±20V On-state resistance: 10.7mΩ Mounting: SMD Gate charge: 43nC Kind of channel: enhanced | auf Bestellung 65 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOB2502L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 150V 106A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 106A (Tc) Rds On (Max) @ Id, Vgs: 10.7mOhm @ 20A, 10V Power Dissipation (Max): 277W (Tc) Vgs(th) (Max) @ Id: 5.1V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3010 pF @ 75 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB254L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 150V 4.2A/32A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 32A (Tc) Rds On (Max) @ Id, Vgs: 46mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 75 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB254L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 150V 32A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| AOB254L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 150V 4.2A/32A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 32A (Tc) Rds On (Max) @ Id, Vgs: 46mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2150 pF @ 75 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB256L | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 13.5A; 83W; TO263 Mounting: SMD Power dissipation: 83W Polarisation: unipolar Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±20V Case: TO263 Drain-source voltage: 150V Drain current: 13.5A On-state resistance: 85mΩ Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| AOB256L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 150V 19A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| AOB256L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 150V 3A/19A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta), 19A (Tc) Rds On (Max) @ Id, Vgs: 85mOhm @ 10A, 10V Power Dissipation (Max): 2.1W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1165 pF @ 75 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB256L | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 13.5A; 83W; TO263 Mounting: SMD Power dissipation: 83W Polarisation: unipolar Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±20V Case: TO263 Drain-source voltage: 150V Drain current: 13.5A On-state resistance: 85mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 800 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| AOB25S65L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 650V 25A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 12.5A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 26.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1278 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB25S65L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 650V 25A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| AOB25S65L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 650V 25A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| AOB25S65L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 650V 25A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 12.5A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 26.4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1278 pF @ 100 V | auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOB25S65L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 650V 25A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 190 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOB25S65L Produktcode: 173627 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||
| AOB25S65L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 650V 25A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 190 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| AOB2606L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 60V 13A/72A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 72A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 115W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB2606L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 60V 72A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| AOB2606L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 60V 72A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| AOB2606L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 60V 13A/72A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 72A (Tc) Rds On (Max) @ Id, Vgs: 6.2mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 115W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4050 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB2608L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 60V 11A/72A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 72A (Tc) Rds On (Max) @ Id, Vgs: 7.6mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2995 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB2608L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 60V 72A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| AOB2608L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 60V 11A/72A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 72A (Tc) Rds On (Max) @ Id, Vgs: 7.6mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 55 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2995 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB260L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 60V 20A/140A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 140A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V Power Dissipation (Max): 1.9W (Ta), 330W (Tc) Vgs(th) (Max) @ Id: 3.2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB260L | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 165W; TO263 Mounting: SMD Power dissipation: 165W Polarisation: unipolar Gate charge: 150nC Kind of channel: enhanced Gate-source voltage: ±20V Case: TO263 Drain-source voltage: 60V Drain current: 110A On-state resistance: 2.2mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke | auf Bestellung 26 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOB260L | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 110A; 165W; TO263 Mounting: SMD Power dissipation: 165W Polarisation: unipolar Gate charge: 150nC Kind of channel: enhanced Gate-source voltage: ±20V Case: TO263 Drain-source voltage: 60V Drain current: 110A On-state resistance: 2.2mΩ Type of transistor: N-MOSFET | auf Bestellung 26 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOB260L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 60V 20A/140A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 140A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V Power Dissipation (Max): 1.9W (Ta), 330W (Tc) Vgs(th) (Max) @ Id: 3.2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14200 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB260L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 60V 140A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| AOB260L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 60V 140A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| AOB2618L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 60V 23A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| AOB2618L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 60V 7A/23A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 23A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 41.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB2618L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 60V 7A/23A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 23A (Tc) Rds On (Max) @ Id, Vgs: 19mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 41.5W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB262L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 60V 20A/140A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 140A (Tc) Rds On (Max) @ Id, Vgs: 2.8mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 3.2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9800 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB262L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 60V 140A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| AOB264L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 60V 19A/140A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 140A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 3.2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB264L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 60V 140A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| AOB264L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 60V 19A/140A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 140A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 3.2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8400 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB266L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 60V 140A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| AOB266L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 60V 18A/140A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 140A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 268W (Tc) Vgs(th) (Max) @ Id: 3.2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB266L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 60V 140A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| AOB266L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 60V 18A/140A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 140A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 268W (Tc) Vgs(th) (Max) @ Id: 3.2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6800 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB270AL | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 75V 21.5A/140A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21.5A (Ta), 140A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 500W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10830 pF @ 37.5 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB270AL | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 110A; 250W; TO263 Mounting: SMD Power dissipation: 250W Polarisation: unipolar Gate charge: 147nC Kind of channel: enhanced Gate-source voltage: ±20V Case: TO263 Drain-source voltage: 75V Drain current: 110A On-state resistance: 2.4mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke | auf Bestellung 695 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOB270AL | Alpha & Omega Semiconductor | Trans MOSFET N-CH 75V 140A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| AOB270AL | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 75V; 110A; 250W; TO263 Mounting: SMD Power dissipation: 250W Polarisation: unipolar Gate charge: 147nC Kind of channel: enhanced Gate-source voltage: ±20V Case: TO263 Drain-source voltage: 75V Drain current: 110A On-state resistance: 2.4mΩ Type of transistor: N-MOSFET | auf Bestellung 695 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOB270AL | Alpha & Omega Semiconductor | Trans MOSFET N-CH 75V 140A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| AOB270L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 75V 21.5A/140A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21.5A (Ta), 140A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 500W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10350 pF @ 37.5 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB270L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 75V 21.5A/140A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21.5A (Ta), 140A (Tc) Rds On (Max) @ Id, Vgs: 2.3mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 500W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 75 V Gate Charge (Qg) (Max) @ Vgs: 215 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10350 pF @ 37.5 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB27S60L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 27A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| AOB27S60L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 27A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| AOB27S60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 27A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 13.5A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1294 pF @ 100 V | auf Bestellung 6188 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOB27S60L | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 17A; 40W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 17A Power dissipation: 40W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.16Ω Mounting: SMD Gate charge: 26nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| AOB27S60L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 27A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| AOB27S60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 27A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 13.5A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1294 pF @ 100 V | auf Bestellung 5600 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOB27S60L | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 17A; 40W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 17A Power dissipation: 40W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.16Ω Mounting: SMD Gate charge: 26nC Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| AOB280A60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 14A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 7A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB280A60L | Alpha & Omega Semiconductor | N Channel Power Transistor | Produkt ist nicht verfügbar | |||||||||||||||
| AOB280A60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 14A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 280mOhm @ 7A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 23.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1350 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB280L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 80V 20.5A/140A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20.5A (Ta), 140A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 224 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11135 pF @ 40 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB280L | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 110A; 166.5W; TO263 Mounting: SMD Case: TO263 Drain-source voltage: 80V Drain current: 110A On-state resistance: 2.2mΩ Type of transistor: N-MOSFET Power dissipation: 166.5W Polarisation: unipolar Gate charge: 160nC Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke | auf Bestellung 770 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOB280L | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 110A; 166.5W; TO263 Mounting: SMD Case: TO263 Drain-source voltage: 80V Drain current: 110A On-state resistance: 2.2mΩ Type of transistor: N-MOSFET Power dissipation: 166.5W Polarisation: unipolar Gate charge: 160nC Kind of channel: enhanced Gate-source voltage: ±20V | auf Bestellung 770 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOB280L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 80V 140A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| AOB280L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 80V 140A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| AOB282L | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 82A; 136W; TO263 Mounting: SMD Power dissipation: 136W Polarisation: unipolar Gate charge: 58nC Kind of channel: enhanced Gate-source voltage: ±20V Case: TO263 Drain-source voltage: 80V Drain current: 82A On-state resistance: 3.2mΩ Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| AOB282L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 80V 105A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| AOB282L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 80V 105A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| AOB282L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 80V 18.5A/105A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18.5A (Ta), 105A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 272.5W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7765 pF @ 40 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB282L | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 82A; 136W; TO263 Mounting: SMD Power dissipation: 136W Polarisation: unipolar Gate charge: 58nC Kind of channel: enhanced Gate-source voltage: ±20V Case: TO263 Drain-source voltage: 80V Drain current: 82A On-state resistance: 3.2mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| AOB284L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 80V 16A/105A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 105A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 250W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5154 pF @ 40 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB284L | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 82A; 125W; TO263 Mounting: SMD Power dissipation: 125W Polarisation: unipolar Gate charge: 0.1µC Kind of channel: enhanced Gate-source voltage: ±20V Case: TO263 Drain-source voltage: 80V Drain current: 82A On-state resistance: 7.2mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 800 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| AOB284L | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 82A; 125W; TO263 Mounting: SMD Power dissipation: 125W Polarisation: unipolar Gate charge: 0.1µC Kind of channel: enhanced Gate-source voltage: ±20V Case: TO263 Drain-source voltage: 80V Drain current: 82A On-state resistance: 7.2mΩ Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| AOB284L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 80V 105A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| AOB286L | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 55A; 83W; TO263 Mounting: SMD Power dissipation: 83W Polarisation: unipolar Drain current: 55A Drain-source voltage: 80V Gate charge: 63nC Case: TO263 Kind of channel: enhanced Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 7.6mΩ Anzahl je Verpackung: 1 Stücke | auf Bestellung 440 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOB286L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 80V 70A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| AOB286L | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 55A; 83W; TO263 Mounting: SMD Power dissipation: 83W Polarisation: unipolar Drain current: 55A Drain-source voltage: 80V Gate charge: 63nC Case: TO263 Kind of channel: enhanced Type of transistor: N-MOSFET Gate-source voltage: ±20V On-state resistance: 7.6mΩ | auf Bestellung 440 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOB286L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 80V 70A 3-Pin(2+Tab) D2PAK | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| AOB286L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 80V 70A 3-Pin(2+Tab) D2PAK | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOB286L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 80V 70A 3-Pin(2+Tab) D2PAK | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOB286L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 80V 13A/70A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 167W (Tc) Vgs(th) (Max) @ Id: 3.3V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3142 pF @ 40 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB288L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 80V 10.5A/46A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 46A (Tc) Rds On (Max) @ Id, Vgs: 8.9mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 93.5W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 38 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1871 pF @ 40 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB288L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 80V 46A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| AOB2904 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 100V 120A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||
| AOB2904 | Alpha & Omega Semiconductor | 100V N-Channel AlphaSGT TM | Produkt ist nicht verfügbar | |||||||||||||||
| AOB2904 | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 163W; TO263 Mounting: SMD Power dissipation: 163W Case: TO263 Polarisation: unipolar Gate charge: 93nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 120A On-state resistance: 4.4mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke | auf Bestellung 685 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOB2904 | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 120A; 163W; TO263 Mounting: SMD Power dissipation: 163W Case: TO263 Polarisation: unipolar Gate charge: 93nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 120A On-state resistance: 4.4mΩ Type of transistor: N-MOSFET | auf Bestellung 685 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOB2906 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 100V TO-263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Current - Continuous Drain (Id) @ 25°C: 122A (Tc) Supplier Device Package: TO-263 (D2Pak) | Produkt ist nicht verfügbar | |||||||||||||||
| AOB290L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 100V 140A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| AOB290L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 100V 140A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 1600 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOB290L | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 110A; 250W; TO263 Mounting: SMD Power dissipation: 250W Case: TO263 Polarisation: unipolar Gate charge: 126nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 110A On-state resistance: 3.2mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 1 Stücke | auf Bestellung 93 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOB290L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 100V 140A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 1600 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOB290L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 100V 18A/140A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 140A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 500W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9550 pF @ 50 V | auf Bestellung 800 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOB290L | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 110A; 250W; TO263 Mounting: SMD Power dissipation: 250W Case: TO263 Polarisation: unipolar Gate charge: 126nC Kind of channel: enhanced Gate-source voltage: ±20V Drain-source voltage: 100V Drain current: 110A On-state resistance: 3.2mΩ Type of transistor: N-MOSFET | auf Bestellung 93 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOB290L Produktcode: 169925 | Transistoren > MOSFET N-CH | Produkt ist nicht verfügbar | ||||||||||||||||
| AOB290L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 100V 140A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| AOB290L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 100V 140A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 202400 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOB290L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 100V 140A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 202400 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOB290L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 100V 18A/140A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 140A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 500W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 9550 pF @ 50 V | auf Bestellung 1559 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOB2910L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N CH 100V 6A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 30A (Tc) Rds On (Max) @ Id, Vgs: 23.5mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1190 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB2910L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 100V 30A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| AOB2910L | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 21A; 25W; TO263 Mounting: SMD Power dissipation: 25W Polarisation: unipolar Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±20V Case: TO263 Drain-source voltage: 100V Drain current: 21A On-state resistance: 23.5mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 800 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| AOB2910L | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 21A; 25W; TO263 Mounting: SMD Power dissipation: 25W Polarisation: unipolar Gate charge: 7nC Kind of channel: enhanced Gate-source voltage: ±20V Case: TO263 Drain-source voltage: 100V Drain current: 21A On-state resistance: 23.5mΩ Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| AOB2918L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 100V 13A/90A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 90A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 267W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB2918L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 100V 90A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| AOB2918L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 100V 13A/90A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 90A (Tc) Rds On (Max) @ Id, Vgs: 7mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 267W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3430 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB292L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 100V 105A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 105A (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6775 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB292L | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 82A; 300W; TO263 Mounting: SMD Power dissipation: 300W Polarisation: unipolar Gate charge: 90nC Kind of channel: enhanced Gate-source voltage: ±20V Case: TO263 Drain-source voltage: 100V Drain current: 82A On-state resistance: 4.1mΩ Type of transistor: N-MOSFET Anzahl je Verpackung: 800 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| AOB292L | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 82A; 300W; TO263 Mounting: SMD Power dissipation: 300W Polarisation: unipolar Gate charge: 90nC Kind of channel: enhanced Gate-source voltage: ±20V Case: TO263 Drain-source voltage: 100V Drain current: 82A On-state resistance: 4.1mΩ Type of transistor: N-MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| AOB292L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 100V 105A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| AOB292L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 100V 105A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| AOB292L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 100V 105A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 105A (Tc) Rds On (Max) @ Id, Vgs: 4.1mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 300W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 126 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6775 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB296L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 100V 70A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| AOB296L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N CH 100V 9.5A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 70A (Tc) Rds On (Max) @ Id, Vgs: 9.7mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2785 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB298L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 100V 58A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| AOB298L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 100V 9A/58A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 58A (Tc) Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB298L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 100V 9A/58A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 58A (Tc) Rds On (Max) @ Id, Vgs: 14.5mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 4.1V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB29S50L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 500V 29A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 14.5A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 26.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1312 pF @ 100 V | auf Bestellung 800 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOB29S50L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 500V 29A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| AOB29S50L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 500V 29A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| AOB29S50L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 500V 29A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 29A (Tc) Rds On (Max) @ Id, Vgs: 150mOhm @ 14.5A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 3.9V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 26.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1312 pF @ 100 V | auf Bestellung 800 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOB360A70L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 700V 12A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 6A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 100 V | auf Bestellung 950 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOB360A70L | Alpha & Omega Semiconductor | N Channel Power Transistor | Produkt ist nicht verfügbar | |||||||||||||||
| AOB360A70L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 700V 12A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 6A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 22.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 100 V | auf Bestellung 800 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOB380A60CL | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 11A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V Power Dissipation (Max): 131W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 100 V | auf Bestellung 1351 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOB380A60CL | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 11A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 5.5A, 10V Power Dissipation (Max): 131W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 955 pF @ 100 V | auf Bestellung 800 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOB403 | AO | 07+ SOT-263 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB403 | AO | TO-252 | auf Bestellung 50000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB403 | AO | SOT-263 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB403L | AO | SOT-263 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB403L | AO | 07+ SOT-263 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB405 | AO | 07+ SOT-263 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB405 | AO | TO-252 | auf Bestellung 50000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB405 | AO | SOT-263 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB405L | AO | SOT-263 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB405L | AO | 07+ SOT-263 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB409L | Alpha & Omega Semiconductor | Trans MOSFET P-CH 60V 31.5A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 3200 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOB409L | Alpha & Omega Semiconductor | Trans MOSFET P-CH 60V 31.5A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| AOB409L | Alpha & Omega Semiconductor | Trans MOSFET P-CH 60V 31.5A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 3200 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOB409L | Alpha & Omega Semiconductor Inc. | Description: MOSFET P-CH 60V 5A TO263 | Produkt ist nicht verfügbar | |||||||||||||||
| AOB409L | Alpha & Omega Semiconductor | Trans MOSFET P-CH 60V 31.5A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 1600 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| AOB409L | Alpha & Omega Semiconductor | Trans MOSFET P-CH 60V 31.5A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| AOB409L | ALPHA & OMEGA SEMICONDUCTOR | AOB409L SMD P channel transistors | auf Bestellung 359 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOB410L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 100V TO263 Packaging: Bulk Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 150A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V Power Dissipation (Max): 1.9W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 129 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7950 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB411L | Alpha & Omega Semiconductor Inc. | Description: MOSFET P-CH 60V 8A TO263 | Produkt ist nicht verfügbar | |||||||||||||||
| AOB411L | ALPHA & OMEGA SEMICONDUCTOR | AOB411L SMD P channel transistors | auf Bestellung 726 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOB411L_001 | Alpha & Omega Semiconductor Inc. | Description: MOSFET P-CH 60V 8A TO263 | Produkt ist nicht verfügbar | |||||||||||||||
| AOB412 | AOS | 07+ TO-263 | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB412 | AOS | TO-263 | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB412L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 100V 8.2A TO263 | Produkt ist nicht verfügbar | |||||||||||||||
| AOB414 | ALPHA & OMEGA SEMICONDUCTOR | AOB414 SMD N channel transistors | auf Bestellung 564 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOB414 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 100V 6.6A/51A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), 51A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V | auf Bestellung 310 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOB414 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 100V 6.6A/51A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.6A (Ta), 51A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 20A, 10V Power Dissipation (Max): 2.5W (Ta), 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2200 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB414L | AO | SOT-263 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB414_001 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 100V 51A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| AOB416 | AO | SOT-263 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB416 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 100V 45A D2PAK | auf Bestellung 2364 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB416 | AOS | TO-263 | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB416 | AO | 07+ SOT-263 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB416 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 100V 45A D2PAK | auf Bestellung 1600 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB416 | AO | TO-263 | auf Bestellung 50000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB416 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 100V 45A D2PAK | auf Bestellung 2364 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB416L | AO | SOT-263 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB418 | AO | SOT-263 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB418 | AOS | TO-263 | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB418 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 100V 105A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| AOB418 | AO | 07+ SOT-263 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB418 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 100V 105A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| AOB418 | AO | TO-263 | auf Bestellung 50000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB418 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 100V 105A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| AOB4184 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 40V 12A TO263 | Produkt ist nicht verfügbar | |||||||||||||||
| AOB4184 | ALPHA & OMEGA SEMICONDUCTOR | AOB4184 SMD N channel transistors | auf Bestellung 359 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOB418L | AO | SOT-263 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB420 | AO | 07+ SOT-263 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB420 | AO | TO-263 | auf Bestellung 50000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB420 | AO | SOT-263 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB420 | AOS | TO-263 | auf Bestellung 12000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB420L | AO | SOT-263 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB420L | AO | 07+ SOT-263 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB428 | AO | SOT-263 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB428 | AO | 07+ SOT-263 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB428 | AO | TO-263 | auf Bestellung 50000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB428L | AO | SOT-263 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB42S60 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 37A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| AOB42S60L | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 417W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 23A Power dissipation: 417W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.31Ω Mounting: SMD Gate charge: 40nC Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 680 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOB42S60L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 37A 3-Pin(3+Tab) TO-220 Tube | Produkt ist nicht verfügbar | |||||||||||||||
| AOB42S60L | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 23A; 417W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 23A Power dissipation: 417W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.31Ω Mounting: SMD Gate charge: 40nC Kind of channel: enhanced | auf Bestellung 680 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOB42S60L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 37A 3-Pin(3+Tab) TO-220 Tube | Produkt ist nicht verfügbar | |||||||||||||||
| AOB42S60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 37A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Tc) Rds On (Max) @ Id, Vgs: 109mOhm @ 21A, 10V Power Dissipation (Max): 417W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2154 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB430 | AO | SOT-263 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB430 | AO | 07+ SOT-263 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB430 | AO | TO-263 | auf Bestellung 50000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB430L | AO | 07+ SOT-263 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB430L | AO | SOT-263 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB430Y | AO | SOT-263 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB430Y | AO | 07+ SOT-263 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB430YL | AO | SOT-263 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB430YL | AO | 07+ SOT-263 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB432 | AO | TO-263 | auf Bestellung 50000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB432 | AO | SOT-263 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB432 | AO | 07+ SOT-263 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB432L | AO | SOT-263 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB432L | AO | 07+ SOT-263 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB434 | AO | TO-263 | auf Bestellung 50000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB434 | AO | SOT-263 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB434 | AO | 07+ SOT-263 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB434L | AO | SOT-263 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB434L | AO | 07+ SOT-263 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB436 | AO | TO-263 | auf Bestellung 50000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB436 | AO | SOT-263 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB436 | AO | 07+ SOT-263 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB436L | AO | SOT-263 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB436L | AO | 07+ SOT-263 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB438 | AO | SOT-263 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB438 | AO | 07+ SOT-263 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB438L | AO | 07+ SOT-263 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB438L | AO | SOT-263 | auf Bestellung 30000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB440 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 60V 75A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB440 | Alpha & Omega Semiconductor | Trans MOSFET N-CH 60V 75A 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| AOB440 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 60V 75A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 30A, 10V Power Dissipation (Max): 150W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4560 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB442 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 40V 21A TO263 | Produkt ist nicht verfügbar | |||||||||||||||
| AOB462L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 60V 7A TO263 | Produkt ist nicht verfügbar | |||||||||||||||
| AOB470L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 75V 10A TO263 | Produkt ist nicht verfügbar | |||||||||||||||
| AOB480L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 80V D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| AOB480L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 80V D2PAK | auf Bestellung 11 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB480L_001 | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 800V TO-263 | Produkt ist nicht verfügbar | |||||||||||||||
| AOB482L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 80V 11A/105A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 105A (Tc) Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4870 pF @ 40 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB482L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 80V 105A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| AOB482L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 80V 11A/105A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 105A (Tc) Rds On (Max) @ Id, Vgs: 6.9mOhm @ 20A, 10V Power Dissipation (Max): 2.1W (Ta), 333W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 7V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4870 pF @ 40 V | auf Bestellung 15 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOB4S60 Produktcode: 170155 | IC > IC andere | Produkt ist nicht verfügbar | ||||||||||||||||
| AOB4S60L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 600V 4A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| AOB4S60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 4A TO263 | Produkt ist nicht verfügbar | |||||||||||||||
| AOB5B60D | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 600V 10A 82400mW 3-Pin(2+Tab) D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| AOB5B60D | Alpha & Omega Semiconductor Inc. | Description: IGBT 600V 10A 82.4W TO263 | Produkt ist nicht verfügbar | |||||||||||||||
| AOB5B65M1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 650V 5A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 195 ns Vce(on) (Max) @ Vge, Ic: 1.98V @ 15V, 5A Supplier Device Package: TO-263 (D2Pak) Td (on/off) @ 25°C: 8.5ns/106ns Switching Energy: 80µJ (on), 70µJ (off) Test Condition: 400V, 5A, 60Ohm, 15V Gate Charge: 14 nC Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 15 A Power - Max: 83 W | auf Bestellung 243 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOB5B65M1 | Alpha & Omega Semiconductor | Trans IGBT Chip N-CH 650V 10A 83000mW 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| AOB5B65M1 | Alpha & Omega Semiconductor Inc. | Description: IGBT 650V 5A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 195 ns Vce(on) (Max) @ Vge, Ic: 1.98V @ 15V, 5A Supplier Device Package: TO-263 (D2Pak) Td (on/off) @ 25°C: 8.5ns/106ns Switching Energy: 80µJ (on), 70µJ (off) Test Condition: 400V, 5A, 60Ohm, 15V Gate Charge: 14 nC Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 15 A Power - Max: 83 W | Produkt ist nicht verfügbar | |||||||||||||||
| AOB600A60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 8A TO263 | auf Bestellung 765 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB600A60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 8A TO263 | Produkt ist nicht verfügbar | |||||||||||||||
| AOB600A60L | Alpha & Omega Semiconductor | N Channel Power Transistor | Produkt ist nicht verfügbar | |||||||||||||||
| AOB600A70FL | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 700V 8.5A TO263 | auf Bestellung 800 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB600A70FL | Alpha & Omega Semiconductor | N Channel Power Transistor | Produkt ist nicht verfügbar | |||||||||||||||
| AOB600A70FL | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 700V 8.5A TO263 | auf Bestellung 800 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB600A70L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 700V 8.5A TO263 | auf Bestellung 800 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOB600A70L | Alpha & Omega Semiconductor | N Channel Power Transistor | Produkt ist nicht verfügbar | |||||||||||||||
| AOB600A70L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 700V 8.5A TO263 | auf Bestellung 800 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOB66518L | Alpha & Omega Semiconductor Inc. | Description: N Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 120A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Power Dissipation (Max): 10W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 115 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 75 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB66518L | Alpha & Omega Semiconductor | 150V N-Channel MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| AOB66613L | Alpha & Omega Semiconductor | 60V N-Channel MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| AOB66613L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 60V 44.5A/120A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44.5A (Ta), 120A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V Power Dissipation (Max): 8.3W (Ta), 260W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V | auf Bestellung 4350 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOB66613L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 60V 44.5A/120A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44.5A (Ta), 120A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 20A, 10V Power Dissipation (Max): 8.3W (Ta), 260W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5300 pF @ 30 V | auf Bestellung 4000 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOB66616L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 60V 140A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOB66616L | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 95A; 50W; TO263 Mounting: SMD Case: TO263 Drain-source voltage: 60V Drain current: 95A On-state resistance: 3.2mΩ Type of transistor: N-MOSFET Power dissipation: 50W Polarisation: unipolar Gate charge: 42.5nC Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke | auf Bestellung 73 Stücke: Lieferzeit 7-14 Tag (e) |
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| AOB66616L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 60V 140A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| AOB66616L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 60V 38.5A/140A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38.5A (Ta), 140A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V Power Dissipation (Max): 8.3W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 30 V | auf Bestellung 790 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOB66616L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 60V 140A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 41600 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOB66616L | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 95A; 50W; TO263 Mounting: SMD Case: TO263 Drain-source voltage: 60V Drain current: 95A On-state resistance: 3.2mΩ Type of transistor: N-MOSFET Power dissipation: 50W Polarisation: unipolar Gate charge: 42.5nC Kind of channel: enhanced Gate-source voltage: ±20V | auf Bestellung 73 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOB66616L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 60V 140A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 41600 Stücke: Lieferzeit 14-21 Tag (e) |
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| AOB66616L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 60V 140A 3-Pin(2+Tab) D2PAK T/R | auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| AOB66616L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 60V 38.5A/140A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38.5A (Ta), 140A (Tc) Rds On (Max) @ Id, Vgs: 3.2mOhm @ 20A, 10V Power Dissipation (Max): 8.3W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 3.4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2870 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB66620L | Alpha & Omega Semiconductor Inc. | Description: N Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 57A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 20A, 10V Power Dissipation (Max): 8.3W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 3.6V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1070 pF @ 30 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB66811L | Alpha & Omega Semiconductor Inc. | Description: FET N CHANNEL 80V Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 140A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V Power Dissipation (Max): 10W (Ta), 310W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5750 pF @ 40 V | auf Bestellung 57600 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOB66811L | Alpha & Omega Semiconductor Inc. | Description: FET N CHANNEL 80V Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 44A (Ta), 140A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 20A, 10V Power Dissipation (Max): 10W (Ta), 310W (Tc) Vgs(th) (Max) @ Id: 3.8V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5750 pF @ 40 V | auf Bestellung 770 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOB66914L | Alpha & Omega Semiconductor | N Channel Trench Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| AOB66914L | Alpha & Omega Semiconductor Inc. | Description: N Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 45A (Ta), 120A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 20A, 6V Power Dissipation (Max): 10W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12500 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB66916L | Alpha & Omega Semiconductor | N-Channel MOSFET | auf Bestellung 8000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| AOB66916L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 100V 35.5/120A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35.5A (Ta), 120A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V Power Dissipation (Max): 8.3W (Ta), 277W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6180 pF @ 50 V | auf Bestellung 2640 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOB66916L | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 35.5A; 8.3W; D2PAK Mounting: SMD Case: D2PAK Drain-source voltage: 100V Drain current: 35.5A On-state resistance: 3.6mΩ Type of transistor: N-MOSFET Power dissipation: 8.3W Polarisation: unipolar Gate charge: 78nC Technology: AlphaSGT™ Kind of channel: enhanced Gate-source voltage: ±20V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB66916L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 100V 35.5/120A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35.5A (Ta), 120A (Tc) Rds On (Max) @ Id, Vgs: 3.6mOhm @ 20A, 10V Power Dissipation (Max): 8.3W (Ta), 277W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6180 pF @ 50 V | auf Bestellung 1600 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOB66916L | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 35.5A; 8.3W; D2PAK Mounting: SMD Case: D2PAK Drain-source voltage: 100V Drain current: 35.5A On-state resistance: 3.6mΩ Type of transistor: N-MOSFET Power dissipation: 8.3W Polarisation: unipolar Gate charge: 78nC Technology: AlphaSGT™ Kind of channel: enhanced Gate-source voltage: ±20V Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| AOB66918L | Alpha & Omega Semiconductor | N Channel Trench Power MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| AOB66918L | Alpha & Omega Semiconductor Inc. | Description: N Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 33A (Ta), 120A (Tc) Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V Power Dissipation (Max): 10W (Ta), 375W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 105 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6500 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB66919L | Alpha & Omega Semiconductor Inc. | Description: N Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 105A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 20A, 10V Power Dissipation (Max): 10W (Ta), 187W (Tc) Vgs(th) (Max) @ Id: 2.6V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3420 pF @ 50 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB66920L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 100V 80A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| AOB66920L | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 22.5A; 8.3W; D2PAK Drain-source voltage: 100V Drain current: 22.5A On-state resistance: 8mΩ Type of transistor: N-MOSFET Power dissipation: 8.3W Polarisation: unipolar Gate charge: 50nC Technology: AlphaSGT™ Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: D2PAK Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| AOB66920L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 100V 22.5A/80A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22.5A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 8.3W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V | auf Bestellung 1428 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOB66920L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 100V 22.5A/80A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22.5A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 20A, 10V Power Dissipation (Max): 8.3W (Ta), 100W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 50 V | auf Bestellung 800 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOB66920L | ALPHA & OMEGA SEMICONDUCTOR | Category: SMD N channel transistors Description: Transistor: N-MOSFET; AlphaSGT™; unipolar; 100V; 22.5A; 8.3W; D2PAK Drain-source voltage: 100V Drain current: 22.5A On-state resistance: 8mΩ Type of transistor: N-MOSFET Power dissipation: 8.3W Polarisation: unipolar Gate charge: 50nC Technology: AlphaSGT™ Kind of channel: enhanced Gate-source voltage: ±20V Mounting: SMD Case: D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| AOB7S60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 7A TO263 | Produkt ist nicht verfügbar | |||||||||||||||
| AOB7S60L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 600V 7A TO263 | Produkt ist nicht verfügbar | |||||||||||||||
| AOB7S65L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 650V 7A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 434 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB7S65L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 650V 7A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 650mOhm @ 3.5A, 10V Power Dissipation (Max): 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 9.2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 434 pF @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB9N70L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 700V 9A TO263 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4.5A, 10V Power Dissipation (Max): 236W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB9N70L | Alpha & Omega Semiconductor Inc. | Description: MOSFET N-CH 700V 9A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 4.5A, 10V Power Dissipation (Max): 236W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 700 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
| AOB9N70L | Alpha & Omega Semiconductor | Trans MOSFET N-CH 700V 9A 3-Pin(2+Tab) D2PAK T/R | Produkt ist nicht verfügbar | |||||||||||||||
| AOBD2 | VELLEMAN INSTRUMENTS | Description: VELLEMAN INSTRUMENTS - AOBD2 - Kfz-Diagnose OBD2, EOBD und JOBD Codeleser und Scanner tariffCode: 90303100 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 Produktpalette: - | auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| AOBGA.SET | SRA Soldering Products | Description: HOT AIR REWORK BGA NOZZLE SET 1 Packaging: Box Length: Assorted Width: Assorted Height: Assorted Tip Shape: Nozzle Tip Type: Rework (Hot Air) Part Status: Active Tip Chip Size: BGA | auf Bestellung 1 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOBGA.SET2 | SRA Soldering Products | Description: HOT AIR REWORK BGA NOZZLE SET 2 Packaging: Box Length: Assorted Width: Assorted Height: Assorted Tip Shape: Nozzle Tip Type: Rework (Hot Air) Part Status: Active Tip Chip Size: BGA | auf Bestellung 1 Stücke: Lieferzeit 21-28 Tag (e) |
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| AOBN15-15 | ETA-USA | ETA-USA 15W 15V 1A | Produkt ist nicht verfügbar | |||||||||||||||
| AOBN50-24 | ETA-USA | Description: AC/DC CONVERTER 24V 50W | auf Bestellung 3 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOBRX | N/A | 06+ | auf Bestellung 40 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOBRY | N/A | 06+ | auf Bestellung 114 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| AOBS30B65LN | Alpha & Omega Semiconductor | 650V, 30A Alpha IGBT TM AEC-Q101 Qualified | Produkt ist nicht verfügbar | |||||||||||||||
| AOBT*S717ZBA | ST | BGA | auf Bestellung 18 Stücke: Lieferzeit 21-28 Tag (e) |