Produkte > NXP
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||||
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| NXP | NXP | auf Bestellung 20 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
| NXP P89LPC936FDH | NXP | auf Bestellung 5200 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
| NXP ICODE SLIX2-DYMO | LUX IDent | HF-Label 34x17mm, Pitch 32mm, NXP ICODE SLIX2-DYMO | Produkt ist nicht verfügbar | |||||||||||||||
| NXP P5CC012 | Картка службова МБ SAM PPO AT УкрКарт (Чип модуль NXP P5CC012) | auf Bestellung 3 Stücke: Lieferzeit 14-21 Tag (e) | ||||||||||||||||
| NXP(PHILIPS) | auf Bestellung 3640 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| NXP3875GR | Nexperia | Bipolar Transistors - BJT NXP3875G/SOT23/TO-236AB | auf Bestellung 14209 Stücke: Lieferzeit 14-28 Tag (e) |
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| NXP3875GR | NEXPERIA | Trans GP BJT NPN 50V 0.15A 200mW Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||
| NXP3875GR | Nexperia | Trans GP BJT NPN 50V 0.15A 200mW Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||
| NXP3875GR | NEXPERIA | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SOT23,TO236AB Frequency: 80MHz Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Power dissipation: 200mW Type of transistor: NPN Collector-emitter voltage: 50V Collector current: 0.15A Pulsed collector current: 0.2A Current gain: 200...400 Polarisation: bipolar | Produkt ist nicht verfügbar | |||||||||||||||
| NXP3875GR | Nexperia USA Inc. | Description: TRANS NPN 50V 0.15A TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 2930 Stücke: Lieferzeit 21-28 Tag (e) |
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| NXP3875GR | NEXPERIA | Category: NPN SMD transistors Description: Transistor: NPN; bipolar; 50V; 0.15A; 200mW; SOT23,TO236AB Frequency: 80MHz Case: SOT23; TO236AB Mounting: SMD Kind of package: reel; tape Power dissipation: 200mW Type of transistor: NPN Collector-emitter voltage: 50V Collector current: 0.15A Pulsed collector current: 0.2A Current gain: 200...400 Polarisation: bipolar | Produkt ist nicht verfügbar | |||||||||||||||
| NXP3875GR | Nexperia USA Inc. | Description: TRANS NPN 50V 0.15A TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||
| NXP3875YR | Nexperia USA Inc. | Description: TRANS NPN 50V 0.15A TO236AB Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Grade: Automotive Qualification: AEC-Q101 | Produkt ist nicht verfügbar | |||||||||||||||
| NXP3875YR | Nexperia | Bipolar Transistors - BJT NXP3875Y/SOT23/TO-236AB | auf Bestellung 6725 Stücke: Lieferzeit 14-28 Tag (e) |
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| NXP3875YR | Nexperia USA Inc. | Description: TRANS NPN 50V 0.15A TO236AB Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: TO-236AB Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Grade: Automotive Qualification: AEC-Q101 | auf Bestellung 2848 Stücke: Lieferzeit 21-28 Tag (e) |
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| NXP3875YR | Nexperia | Trans GP BJT NPN 50V 0.15A 200mW Automotive 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||
| NXP3875YVL | Nexperia | Bipolar Transistors - BJT NXP3875Y/SOT23/TO-236AB | Produkt ist nicht verfügbar | |||||||||||||||
| NXP6517EL1/139/1A | auf Bestellung 434 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| NXPC0030 | Omron | I/O Power Supply Connection Units | auf Bestellung 7 Stücke: Lieferzeit 14-21 Tag (e) |
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| NXPC0030 | Omron | I/O Power Supply Connection Units | auf Bestellung 15 Stücke: Lieferzeit 14-21 Tag (e) |
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| NXPD1000 | Omron | Power Supply | Produkt ist nicht verfügbar | |||||||||||||||
| NXPD1000 | Omron | Power Supply | auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
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| NXPESD-PROMOKIT | NXP Semiconductors | Description: KIT PROMO ESD PROTECT DIODES | Produkt ist nicht verfügbar | |||||||||||||||
| NXPESD1-KIT | NXP Semiconductors | Description: KIT ESD PROTECT DIODES 18VALUES | auf Bestellung 1 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| NXPESD2-KIT | NXP Semiconductors | Description: KIT ESD PROTECT DIODES 18VALUES | Produkt ist nicht verfügbar | |||||||||||||||
| NXPLOGIC1-KIT | NXP Semiconductors | Description: KIT LOGIC 10EA OF 17 VAL | Produkt ist nicht verfügbar | |||||||||||||||
| NXPLQSC106506Q | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 48A | Produkt ist nicht verfügbar | |||||||||||||||
| NXPLQSC106506Q | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 48A Anzahl je Verpackung: 1000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| NXPLQSC106506Q | WeEn Semiconductors | Schottky Diodes & Rectifiers NXPLQSC106506/TO-220AC/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||
| NXPLQSC10650Q | WeEn Semiconductors | Schottky Diodes & Rectifiers NXPLQSC10650/TO-220AC/STANDARD | Produkt ist nicht verfügbar | |||||||||||||||
| NXPLQSC10650Q | WeEn Semiconductors | Description: DIODE SIL CARB 650V 10A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 250pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max) Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 10 A Current - Reverse Leakage @ Vr: 230 µA @ 650 V | Produkt ist nicht verfügbar | |||||||||||||||
| NXPLQSC20650W6Q | WeEn Semiconductors | Schottky Diodes & Rectifiers NXPLQSC20650W6/TO247/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||
| NXPLQSC20650W6Q | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Max. load current: 20A Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 48A | Produkt ist nicht verfügbar | |||||||||||||||
| NXPLQSC20650W6Q | Ween | NXPLQSC20650W6/TO247/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||
| NXPLQSC20650W6Q | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Max. load current: 20A Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 48A | Produkt ist nicht verfügbar | |||||||||||||||
| NXPLQSC20650WQ | WeEn Semiconductors | Description: DIODE SIL CARB 650V 20A TO247-3 Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-247-3 Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.85 V @ 10 A Current - Reverse Leakage @ Vr: 230 µA @ 650 V | Produkt ist nicht verfügbar | |||||||||||||||
| NXPLQSC20650WQ | WeEn Semiconductor(Hong Kong)Co.,Limited | NXPLQSC20650WQ/TO-247/STANDARD M | Produkt ist nicht verfügbar | |||||||||||||||
| NXPLQSC20650WQ | WeEn Semiconductors | Schottky Diodes & Rectifiers NXPLQSC20650WQ/TO-247/STANDARD M | Produkt ist nicht verfügbar | |||||||||||||||
| NXPLQSC20650WQ | WeEn Semiconductor(Hong Kong)Co.,Limited | NXPLQSC20650WQ/TO-247/STANDARD M | Produkt ist nicht verfügbar | |||||||||||||||
| NXPLQSC30650W6Q | WEEN SEMICONDUCTORS | Description: WEEN SEMICONDUCTORS - NXPLQSC30650W6Q - SiC-Schottky-Diode, Zweifach, gemeinsame Kathode, 650 V, 30 A, 16 nC, TO-247 tariffCode: 85411000 Bauform - Diode: TO-247 Kapazitive Gesamtladung: 16nC rohsCompliant: YES Diodenmontage: Durchsteckmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Zweifach, gemeinsame Kathode Qualifikation: - usEccn: EAR99 Durchschnittlicher Durchlassstrom: 30A euEccn: NLR Wiederkehrende Spitzensperrspannung: 650V Anzahl der Pins: 3 Pins Produktpalette: - productTraceability: No Betriebstemperatur, max.: 175°C | auf Bestellung 199 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| NXPLQSC30650W6Q | WeEn Semiconductors | Schottky Diodes & Rectifiers NXPLQSC30650W6/TO247/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||
| NXPLQSC30650W6Q | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; tube Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Case: TO247-3 Max. off-state voltage: 650V Max. load current: 30A Load current: 15A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 50A | Produkt ist nicht verfügbar | |||||||||||||||
| NXPLQSC30650W6Q | WeEn Semiconductors | Description: NXPLQSC30650WQ TO-247 STANDARD Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 300pF @ 1V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: TO-247-3 Operating Temperature - Junction: 175°C (Max) Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 15 A Current - Reverse Leakage @ Vr: 250 µA @ 650 V | Produkt ist nicht verfügbar | |||||||||||||||
| NXPLQSC30650W6Q | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 15Ax2; TO247-3; tube Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Case: TO247-3 Max. off-state voltage: 650V Max. load current: 30A Load current: 15A x2 Semiconductor structure: common cathode; double Max. forward impulse current: 50A Anzahl je Verpackung: 240 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| NXPLQSC30650WQ | WeEn Semiconductor(Hong Kong)Co.,Limited | NXPLQSC30650WQ/TO-247/STANDARD M | Produkt ist nicht verfügbar | |||||||||||||||
| NXPLQSC30650WQ | Ween | NXPLQSC30650WQ/TO-247/STANDARD M | Produkt ist nicht verfügbar | |||||||||||||||
| NXPLQSC30650WQ | WeEn Semiconductors | Description: DIODE SIL CARB 650V 30A TO247-3 Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 300pF @ 1V, 1MHz Current - Average Rectified (Io): 30A Supplier Device Package: TO-247-3 Operating Temperature - Junction: 175°C (Max) Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.95 V @ 15 A Current - Reverse Leakage @ Vr: 250 µA @ 650 V | Produkt ist nicht verfügbar | |||||||||||||||
| NXPLQSC30650WQ | WeEn Semiconductor(Hong Kong)Co.,Limited | NXPLQSC30650WQ/TO-247/STANDARD M | Produkt ist nicht verfügbar | |||||||||||||||
| NXPLQSC30650WQ | WeEn Semiconductors | Schottky Diodes & Rectifiers NXPLQSC30650WQ/TO-247/STANDARD M | Produkt ist nicht verfügbar | |||||||||||||||
| NXPLQSC30650WQ | NXP Semiconductors | NXPLQSC30650WQ | Produkt ist nicht verfügbar | |||||||||||||||
| NXPMC68040FE33A | Cypress Semiconductor Corp | Description: MC680MICROPROCESSO32-BIHCMOS Packaging: Tape & Reel (TR) | Produkt ist nicht verfügbar | |||||||||||||||
| NXPMOSFET-DESIGNKIT | NXP USA Inc. | Description: KIT DESIGN MOSFET LFPAK Packaging: Box Mounting Type: Surface Mount Quantity: 180 Pieces (18 Values - 10 Each) Kit Type: MOSFETs Part Status: Obsolete | Produkt ist nicht verfügbar | |||||||||||||||
| NXPPICMG/4USYSTEM-OSP | Arrow | CCP54-NXPPICMG/4USystem | Produkt ist nicht verfügbar | |||||||||||||||
| NXPPICMG/4USYSTEM-OSP-RPR | Arrow | Repair BOM | Produkt ist nicht verfügbar | |||||||||||||||
| NXPS20H100C,127 | Ween | Rectifier Diode Schottky 100V 20A 3-Pin(3+Tab) TO-220AB Rail | Produkt ist nicht verfügbar | |||||||||||||||
| NXPS20H100C,127 | NXP USA Inc. | Description: DIODE ARR SCHOT 100V 10A TO220AB Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220AB Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 770 mV @ 10 A Current - Reverse Leakage @ Vr: 4.5 µA @ 100 V | auf Bestellung 3832 Stücke: Lieferzeit 21-28 Tag (e) |
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| NXPS20H100C,127 | WeEn Semiconductors | Schottky Diodes & Rectifiers DUAL POWER SCHOTTKY DIODE | Produkt ist nicht verfügbar | |||||||||||||||
| NXPS20H100C,127 | WeEn Semiconductors | Description: DIODE ARR SCHOT 100V 10A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220AB Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 770 mV @ 10 A Current - Reverse Leakage @ Vr: 4.5 µA @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| NXPS20H100CX,127 | WeEn Semiconductors | Schottky Diodes & Rectifiers DUAL POWER SCHOTTKY DIODE | Produkt ist nicht verfügbar | |||||||||||||||
| NXPS20H100CX,127 | NXP USA Inc. | Description: DIODE ARR SCHOTT 100V 10A TO220F Packaging: Bulk Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220F Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 770 mV @ 10 A Current - Reverse Leakage @ Vr: 4.5 mA @ 100 V | auf Bestellung 162340 Stücke: Lieferzeit 21-28 Tag (e) |
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| NXPS20H100CX,127 | Ween | Rectifier Diode Schottky 100V 20A 3-Pin(3+Tab) TO-220F Rail | Produkt ist nicht verfügbar | |||||||||||||||
| NXPS20H100CX,127 | WeEn Semiconductors | Description: DIODE ARR SCHOTT 100V 10A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220F Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 770 mV @ 10 A Current - Reverse Leakage @ Vr: 4.5 mA @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| NXPS20H110C,127 | Ween | Rectifier Diode Schottky 110V 20A 3-Pin(3+Tab) TO-220AB Rail | Produkt ist nicht verfügbar | |||||||||||||||
| NXPS20H110C,127 | WeEn Semiconductors | Description: DIODE ARR SCHOT 110V 10A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220AB Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 110 V Voltage - Forward (Vf) (Max) @ If: 770 mV @ 10 A Current - Reverse Leakage @ Vr: 6 µA @ 110 V | Produkt ist nicht verfügbar | |||||||||||||||
| NXPS20H110C,127 | WeEn Semiconductors | Schottky Diodes & Rectifiers DUAL POWER SCHOTTKY DIODE | auf Bestellung 32 Stücke: Lieferzeit 14-28 Tag (e) | |||||||||||||||
| NXPS20S100C,127 | WeEn Semiconductors | Description: DIODE ARR SCHOT 100V 10A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220AB Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A Current - Reverse Leakage @ Vr: 3 µA @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| NXPS20S100C,127 | WeEn Semiconductors | Schottky Diodes & Rectifiers Dual Power Schottky Diode | Produkt ist nicht verfügbar | |||||||||||||||
| NXPS20S100C,127 | Ween | Rectifier Diode Schottky 100V 20A 3-Pin(3+Tab) TO-220AB Rail | Produkt ist nicht verfügbar | |||||||||||||||
| NXPS20S100CX,127 | Ween | Rectifier Diode Schottky 100V 20A 3-Pin(3+Tab) TO-220F Rail | Produkt ist nicht verfügbar | |||||||||||||||
| NXPS20S100CX,127 | WeEn Semiconductors | Description: DIODE ARR SCHOTT 100V 10A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 10A Supplier Device Package: TO-220F Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 100 V Voltage - Forward (Vf) (Max) @ If: 580 mV @ 3 A Current - Reverse Leakage @ Vr: 3 µA @ 100 V | Produkt ist nicht verfügbar | |||||||||||||||
| NXPS20S100CX,127 | WeEn Semiconductors | Schottky Diodes & Rectifiers Dual Power Schottky Diode | Produkt ist nicht verfügbar | |||||||||||||||
| NXPS20S110C,127 | WeEn Semiconductors | Description: DIODE SCHOTTKY 110V SIL3P | Produkt ist nicht verfügbar | |||||||||||||||
| NXPS2P33 | Lattice Semiconductor | MPEG TS Serial to Parallel Converter ASIC 48pin TQFP* | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC046506Q | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 24A | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC046506Q | WeEn Semiconductors | Schottky Diodes & Rectifiers NXPSC046506/TO-220AC/STANDARD MARKING * HORIZONTAL, RAIL PACK | auf Bestellung 2886 Stücke: Lieferzeit 14-28 Tag (e) |
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| NXPSC046506Q | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 24A Anzahl je Verpackung: 1000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC046506Q | Ween | NXPSC046506/TO-220AC/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC046506Q | Nexperia | NXPSC046506/TO-220AC/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC046506Q | WeEn Semiconductors | Description: DIODE SCHOTTKY 650V 4A TO220AC | auf Bestellung 19200 Stücke: Lieferzeit 21-28 Tag (e) |
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| NXPSC04650B | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; D2PAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Max. load current: 8A Semiconductor structure: single diode Case: D2PAK Kind of package: reel; tape Max. forward impulse current: 24A Max. forward voltage: 1.5V Anzahl je Verpackung: 1 Stücke | auf Bestellung 13 Stücke: Lieferzeit 7-14 Tag (e) |
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| NXPSC04650B | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; D2PAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Max. load current: 8A Semiconductor structure: single diode Case: D2PAK Kind of package: reel; tape Max. forward impulse current: 24A Max. forward voltage: 1.5V | auf Bestellung 13 Stücke: Lieferzeit 14-21 Tag (e) |
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| NXPSC04650B6J | WeEn Semiconductors | Description: DIODE SCHOTTKY 650V 4A D2PAK | auf Bestellung 3154 Stücke: Lieferzeit 21-28 Tag (e) |
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| NXPSC04650B6J | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; D2PAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: D2PAK Kind of package: reel; tape Max. forward impulse current: 24A | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC04650B6J | WeEn Semiconductors | Description: DIODE SCHOTTKY 650V 4A D2PAK | auf Bestellung 2400 Stücke: Lieferzeit 21-28 Tag (e) |
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| NXPSC04650B6J | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; D2PAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: D2PAK Kind of package: reel; tape Max. forward impulse current: 24A Anzahl je Verpackung: 800 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC04650BJ | NXP Semiconductors | NXPSC04650BJ | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC04650BJ | WeEn Semiconductors | Schottky Diodes & Rectifiers NXPSC04650B/D2PAK/STANDARD M | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC04650D6J | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DPAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: DPAK Kind of package: reel; tape Max. forward impulse current: 24A Anzahl je Verpackung: 2500 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC04650D6J | WeEn Semiconductors | Description: DIODE SCHOTTKY 650V 4A DPAK | auf Bestellung 16439 Stücke: Lieferzeit 21-28 Tag (e) |
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| NXPSC04650D6J | WeEn Semiconductors | Schottky Diodes & Rectifiers NXPSC04650D6/DPAK/REEL 13" Q1/T1 *STANDARD MARK SMD | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC04650D6J | WeEn Semiconductors | Description: DIODE SCHOTTKY 650V 4A DPAK | auf Bestellung 15000 Stücke: Lieferzeit 21-28 Tag (e) |
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| NXPSC04650D6J | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 4A; DPAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: DPAK Kind of package: reel; tape Max. forward impulse current: 24A | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC04650DJ | WeEn Semiconductors | Schottky Diodes & Rectifiers NXPSC04650DJ/DPAK/REEL 13" Q1/T1 | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC04650DJ | WEEN SEMICONDUCTORS | Description: WEEN SEMICONDUCTORS - NXPSC04650DJ - SiC-Schottky-Diode, Einfach, 650 V, 4 A, TO-252 (DPAK) tariffCode: 85411000 Bauform - Diode: TO-252 (DPAK) Kapazitive Gesamtladung: -nC rohsCompliant: YES Diodenmontage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - usEccn: EAR99 Durchschnittlicher Durchlassstrom: 4A euEccn: NLR Wiederkehrende Spitzensperrspannung: 650V Anzahl der Pins: 2 Pins Produktpalette: - productTraceability: No Betriebstemperatur, max.: 175°C | auf Bestellung 3818 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| NXPSC04650DJ | WEEN SEMICONDUCTORS | Description: WEEN SEMICONDUCTORS - NXPSC04650DJ - SiC-Schottky-Diode, Einfach, 650 V, 4 A, TO-252 (DPAK) tariffCode: 85411000 Bauform - Diode: TO-252 (DPAK) Kapazitive Gesamtladung: -nC rohsCompliant: YES Diodenmontage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - usEccn: EAR99 Durchschnittlicher Durchlassstrom: 4A euEccn: NLR Wiederkehrende Spitzensperrspannung: 650V Anzahl der Pins: 2 Pins Produktpalette: - productTraceability: No Betriebstemperatur, max.: 175°C | auf Bestellung 3818 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| NXPSC04650Q | WEEN SEMICONDUCTORS | Description: WEEN SEMICONDUCTORS - NXPSC04650Q - SiC-Schottky-Diode, Einfach, 650 V, 4 A, TO-220AC tariffCode: 85411000 Bauform - Diode: TO-220AC Kapazitive Gesamtladung: -nC rohsCompliant: YES Diodenmontage: Durchsteckmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - usEccn: EAR99 Durchschnittlicher Durchlassstrom: 4A euEccn: NLR Wiederkehrende Spitzensperrspannung: 650V Anzahl der Pins: 2 Pins Produktpalette: - productTraceability: No Betriebstemperatur, max.: 175°C | auf Bestellung 2466 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| NXPSC04650Q | Ween | Diode Schottky 650V 4A 2-Pin(2+Tab) TO-220AC | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC04650Q | WeEn Semiconductor(Hong Kong)Co.,Limited | Rectifier Diode Schottky 650V 4A 2-Pin(2+Tab) TO-220AC | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC04650Q | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Max. load current: 8A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 24A Max. forward voltage: 1.5V | auf Bestellung 25 Stücke: Lieferzeit 14-21 Tag (e) |
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| NXPSC04650Q | WeEn Semiconductors | Schottky Diodes & Rectifiers Silicon Carbide Diode | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC04650Q | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Max. load current: 8A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 24A Max. forward voltage: 1.5V Anzahl je Verpackung: 1 Stücke | auf Bestellung 25 Stücke: Lieferzeit 7-14 Tag (e) |
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| NXPSC04650Q | WeEn Semiconductor(Hong Kong)Co.,Limited | Rectifier Diode Schottky 650V 4A 2-Pin(2+Tab) TO-220AC | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC04650Q | WeEn Semiconductors | Description: DIODE SIL CARB 650V 4A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 130pF @ 1V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A Current - Reverse Leakage @ Vr: 170 µA @ 650 V | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC04650X6Q | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO220FP-2 Kind of package: tube Max. forward impulse current: 24A | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC04650X6Q | WeEn Semiconductors | Schottky Diodes & Rectifiers NXPSC04650X6/TO-220F/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC04650X6Q | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 4A; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 4A Semiconductor structure: single diode Case: TO220FP-2 Kind of package: tube Max. forward impulse current: 24A Anzahl je Verpackung: 1000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC04650X6Q | WeEn Semiconductors | Description: DIODE SIL CARBIDE 650V 4A TO220F Packaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 130pF @ 1V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: TO-220F Operating Temperature - Junction: 175°C (Max) Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A Current - Reverse Leakage @ Vr: 170 µA @ 650 V | auf Bestellung 326 Stücke: Lieferzeit 21-28 Tag (e) |
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| NXPSC04650XQ | NXP Semiconductors | NXPSC04650XQ | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC04650XQ | WeEn Semiconductors | Description: DIODE SIL CARBIDE 650V 4A TO220F Packaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 130pF @ 1V, 1MHz Current - Average Rectified (Io): 4A Supplier Device Package: TO-220F Operating Temperature - Junction: 175°C (Max) Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 4 A Current - Reverse Leakage @ Vr: 170 µA @ 650 V | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC04650XQ | Ween | NXPSC04650XQ/TO220F-2L/STANDARD M | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC04650XQ | WeEn Semiconductors | Schottky Diodes & Rectifiers NXPSC04650XQ/TO220F-2L/STANDARD M | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC066506Q | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220AC; tube Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO220AC Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Max. forward impulse current: 36A Anzahl je Verpackung: 1000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC066506Q | WeEn Semiconductors | Schottky Diodes & Rectifiers NXPSC066506/TO-220AC/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC066506Q | WeEn Semiconductors | Description: DIODE SIL CARB 650V 6A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 190pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Current - Reverse Leakage @ Vr: 200 µA @ 650 V | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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| NXPSC066506Q | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220AC; tube Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO220AC Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Max. forward impulse current: 36A | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC06650B6J | WeEn Semiconductors | Description: DIODE SIL CARBIDE 650V 6A D2PAK | auf Bestellung 1600 Stücke: Lieferzeit 21-28 Tag (e) |
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| NXPSC06650B6J | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; D2PAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: D2PAK Kind of package: reel; tape Max. forward impulse current: 36A | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC06650B6J | Ween | NXPSC06650B6/D2PAK/REEL 13\"" Q1/T1 *STANDARD MARK SMD | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC06650B6J | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; D2PAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: D2PAK Kind of package: reel; tape Max. forward impulse current: 36A Anzahl je Verpackung: 800 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC06650B6J | WeEn Semiconductors | Description: DIODE SIL CARBIDE 650V 6A D2PAK | auf Bestellung 3190 Stücke: Lieferzeit 21-28 Tag (e) |
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| NXPSC06650BJ | WeEn Semiconductors | Schottky Diodes & Rectifiers NXPSC06650B/D2PAK/STANDARD M | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC06650BJ | WeEn Semiconductor(Hong Kong)Co.,Limited | NXPSC06650B/D2PAK/STANDARD M | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC06650BJ | WeEn Semiconductors | Description: DIODE SIL CARBIDE 650V 6A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 190pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Current - Reverse Leakage @ Vr: 200 µA @ 650 V | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC06650BJ | WeEn Semiconductor(Hong Kong)Co.,Limited | NXPSC06650B/D2PAK/STANDARD M | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC06650D6J | WeEn Semiconductors | Description: DIODE SIL CARBIDE 650V 6A DPAK | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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| NXPSC06650D6J | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DPAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: DPAK Kind of package: reel; tape Max. forward impulse current: 36A Anzahl je Verpackung: 2500 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC06650D6J | WeEn Semiconductors | Description: DIODE SIL CARBIDE 650V 6A DPAK | auf Bestellung 6834 Stücke: Lieferzeit 21-28 Tag (e) |
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| NXPSC06650D6J | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 6A; DPAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: DPAK Kind of package: reel; tape Max. forward impulse current: 36A | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC06650DJ | Ween | NXPSC06650DJ/DPAK/REEL 13\"" Q1/T1 | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC06650DJ | WeEn Semiconductors | Schottky Diodes & Rectifiers NXPSC06650DJ/DPAK/REEL 13" Q1/T1 | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC06650Q | WeEn Semiconductors | Description: DIODE SIL CARB 650V 6A TO220AC | auf Bestellung 998 Stücke: Lieferzeit 21-28 Tag (e) |
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| NXPSC06650Q | WeEn Semiconductors | Schottky Diodes & Rectifiers Silicon Carbide Diode | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC06650Q | WeEn Semiconductor(Hong Kong)Co.,Limited | Rectifier Diode Schottky 650V 6A 2-Pin(2+Tab) TO-220AC | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC06650Q | Ween | Rectifier Diode Schottky 650V 6A 2-Pin(2+Tab) TO-220AC | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC06650Q | WeEn Semiconductor(Hong Kong)Co.,Limited | Rectifier Diode Schottky 650V 6A 2-Pin(2+Tab) TO-220AC | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC06650X6Q | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO220FP-2 Kind of package: tube Max. forward impulse current: 36A | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC06650X6Q | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 6A; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 6A Semiconductor structure: single diode Case: TO220FP-2 Kind of package: tube Max. forward impulse current: 36A Anzahl je Verpackung: 1000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC06650X6Q | WeEn Semiconductors | Description: DIODE SIL CARBIDE 650V 6A TO220F Packaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 190pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: TO-220F Operating Temperature - Junction: 175°C (Max) Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Current - Reverse Leakage @ Vr: 200 µA @ 650 V | auf Bestellung 2855 Stücke: Lieferzeit 21-28 Tag (e) |
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| NXPSC06650XQ | Ween | NXPSC06650XQ/TO220F-2L | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC06650XQ | WeEn Semiconductors | Description: DIODE SIL CARBIDE 650V 6A TO220F Packaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 190pF @ 1V, 1MHz Current - Average Rectified (Io): 6A Supplier Device Package: TO-220F Operating Temperature - Junction: 175°C (Max) Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 6 A Current - Reverse Leakage @ Vr: 200 µA @ 650 V | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC06650XQ | WeEn Semiconductors | Schottky Diodes & Rectifiers NXPSC06650XQ/TO220F-2L | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC086506Q | WeEn Semiconductors | Description: DIODE SIL CARB 650V 8A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 260pF @ 1V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 230 µA @ 650 V | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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| NXPSC086506Q | WeEn Semiconductors | NXPSC086506Q THT Schottky diodes | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC086506Q | WeEn Semiconductors | Schottky Diodes & Rectifiers NXPSC086506/TO-220AC/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC08650B6J | WeEn Semiconductors | Schottky Diodes & Rectifiers NXPSC08650B6/D2PAK/REEL 13" Q1/T1 *STANDARD MARK SMD | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC08650B6J | WeEn Semiconductors | Description: DIODE SCHOTTKY 650V 8A D2PAK | auf Bestellung 3165 Stücke: Lieferzeit 21-28 Tag (e) |
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| NXPSC08650B6J | WeEn Semiconductors | Description: DIODE SCHOTTKY 650V 8A D2PAK | auf Bestellung 2400 Stücke: Lieferzeit 21-28 Tag (e) |
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| NXPSC08650B6J | WeEn Semiconductors | NXPSC08650B6J SMD Schottky diodes | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC08650BJ | WEEN SEMICONDUCTORS | Description: WEEN SEMICONDUCTORS - NXPSC08650BJ - SiC-Schottky-Diode, Einfach, 650 V, 8 A, TO-263 (D2PAK) tariffCode: 85411000 Bauform - Diode: TO-263 (D2PAK) Kapazitive Gesamtladung: - rohsCompliant: YES Diodenmontage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - usEccn: EAR99 Durchschnittlicher Durchlassstrom: 8A euEccn: NLR Wiederkehrende Spitzensperrspannung: 650V Anzahl der Pins: 3 Pins Produktpalette: - productTraceability: No Betriebstemperatur, max.: 175°C SVHC: No SVHC (15-Jan-2018) | auf Bestellung 4425 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| NXPSC08650BJ | WeEn Semiconductors | Schottky Diodes & Rectifiers NXPSC08650B/D2PAK/STANDARD M | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC08650BJ | WeEn Semiconductors | Description: DIODE SCHOTTKY 650V 8A D2PAK | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC08650D6J | WeEn Semiconductors | Description: DIODE SCHOTTKY 650V 8A DPAK | auf Bestellung 7184 Stücke: Lieferzeit 21-28 Tag (e) |
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| NXPSC08650D6J | WeEn Semiconductors | Schottky Diodes & Rectifiers NXPSC08650D6/DPAK/REEL 13" Q1/T1 *STANDARD MARK SMD | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC08650D6J | WeEn Semiconductors | Description: DIODE SCHOTTKY 650V 8A DPAK | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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| NXPSC08650D6J | WeEn Semiconductors | NXPSC08650D6J SMD Schottky diodes | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC08650DJ | Ween | NXPSC08650DJ/DPAK/REEL 13\"" Q1/T1 | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC08650DJ | WeEn Semiconductors | Schottky Diodes & Rectifiers NXPSC08650DJ/DPAK/REEL 13" Q1/T1 | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC08650Q | WeEn Semiconductors | NXPSC08650Q THT Schottky diodes | auf Bestellung 19 Stücke: Lieferzeit 7-14 Tag (e) |
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| NXPSC08650Q | WEEN SEMICONDUCTORS | Description: WEEN SEMICONDUCTORS - NXPSC08650Q - SiC-Schottky-Diode, Einfach, 650 V, 8 A, TO-220AC tariffCode: 85411000 Bauform - Diode: TO-220AC Kapazitive Gesamtladung: - rohsCompliant: YES Diodenmontage: Durchsteckmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - usEccn: EAR99 Durchschnittlicher Durchlassstrom: 8A euEccn: NLR Wiederkehrende Spitzensperrspannung: 650V Anzahl der Pins: 2 Pins Produktpalette: - productTraceability: No Betriebstemperatur, max.: 175°C SVHC: No SVHC (15-Jan-2018) | auf Bestellung 4541 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| NXPSC08650Q | WeEn Semiconductors | Rectifiers Silicon Carbide Diode | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC08650X6Q | WeEn Semiconductors | Description: DIODE SIL CARBIDE 650V 8A TO220F Packaging: Bulk Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 260pF @ 1V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-220F Operating Temperature - Junction: 175°C (Max) Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 230 µA @ 650 V | auf Bestellung 2986 Stücke: Lieferzeit 21-28 Tag (e) |
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| NXPSC08650X6Q | WeEn Semiconductors | NXPSC08650X6Q THT Schottky diodes | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC08650XQ | WeEn Semiconductors | Schottky Diodes & Rectifiers NXPSC08650XQ/TO220F-2L/STANDARD M | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC08650XQ | WeEn Semiconductors | Description: DIODE SIL CARBIDE 650V 8A TO220F Packaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 260pF @ 1V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-220F Operating Temperature - Junction: 175°C (Max) Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 8 A Current - Reverse Leakage @ Vr: 230 µA @ 650 V | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC106506Q | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 50A | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC106506Q | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 50A Anzahl je Verpackung: 1000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC106506Q | WeEn Semiconductors | Schottky Diodes & Rectifiers NXPSC106506/TO-220AC/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC106506Q | WeEn Semiconductors | Description: DIODE SIL CARB 650V 10A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 300pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 250 µA @ 650 V | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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| NXPSC106506Q | WEEN SEMICONDUCTORS | Description: WEEN SEMICONDUCTORS - NXPSC106506Q - SiC-Schottky-Diode, Einfach, 650 V, 10 A, 16 nC, TO-220AC tariffCode: 85411000 Bauform - Diode: TO-220AC Kapazitive Gesamtladung: 16nC rohsCompliant: YES Diodenmontage: Durchsteckmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - usEccn: EAR99 Durchschnittlicher Durchlassstrom: 10A euEccn: NLR Wiederkehrende Spitzensperrspannung: 650V Anzahl der Pins: 2 Pins Produktpalette: - productTraceability: No Betriebstemperatur, max.: 175°C | auf Bestellung 923 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| NXPSC10650B6J | WeEn Semiconductors | Schottky Diodes & Rectifiers NXPSC10650B6/D2PAK/REEL 13" Q1/T1 *STANDARD MARK SMD | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC10650B6J | WeEn Semiconductors | Description: DIODE SIL CARBIDE 650V 10A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 300pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C (Max) Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 250 µA @ 650 V | auf Bestellung 1600 Stücke: Lieferzeit 21-28 Tag (e) |
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| NXPSC10650B6J | WEEN SEMICONDUCTORS | Description: WEEN SEMICONDUCTORS - NXPSC10650B6J - SiC-Schottky-Diode, Einfach, 650 V, 10 A, 16 nC, TO-263 (D2PAK) tariffCode: 85411000 Bauform - Diode: TO-263 (D2PAK) Kapazitive Gesamtladung: 16nC rohsCompliant: YES Diodenmontage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - usEccn: EAR99 Durchschnittlicher Durchlassstrom: 10A euEccn: NLR Wiederkehrende Spitzensperrspannung: 650V Anzahl der Pins: 3 Pins Produktpalette: - productTraceability: No Betriebstemperatur, max.: 175°C | auf Bestellung 3180 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| NXPSC10650B6J | Ween | NXPSC10650B6/D2PAK/REEL 13\"" Q1/T1 *STANDARD MARK SMD | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC10650B6J | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; D2PAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: D2PAK Kind of package: reel; tape Max. forward impulse current: 50A | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC10650B6J | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; D2PAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: D2PAK Kind of package: reel; tape Max. forward impulse current: 50A Anzahl je Verpackung: 800 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC10650B6J | WeEn Semiconductors | Description: DIODE SIL CARBIDE 650V 10A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 300pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C (Max) Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 250 µA @ 650 V | auf Bestellung 2290 Stücke: Lieferzeit 21-28 Tag (e) |
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| NXPSC10650B6J | WEEN SEMICONDUCTORS | Description: WEEN SEMICONDUCTORS - NXPSC10650B6J - SiC-Schottky-Diode, Einfach, 650 V, 10 A, 16 nC, TO-263 (D2PAK) tariffCode: 85411000 Bauform - Diode: TO-263 (D2PAK) Kapazitive Gesamtladung: 16nC rohsCompliant: YES Diodenmontage: Oberflächenmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - usEccn: EAR99 Durchschnittlicher Durchlassstrom: 10A euEccn: NLR Wiederkehrende Spitzensperrspannung: 650V Anzahl der Pins: 3 Pins Produktpalette: - productTraceability: No Betriebstemperatur, max.: 175°C | auf Bestellung 3180 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| NXPSC10650BJ | WeEn Semiconductor(Hong Kong)Co.,Limited | 934070005118 | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC10650BJ | WeEn Semiconductors | Description: DIODE SIL CARBIDE 650V 10A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 300pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C (Max) Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 250 µA @ 650 V | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC10650BJ | WeEn Semiconductors | Diodes - General Purpose, Power, Switching NXPSC10650B/D2PAK/STANDARD M | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC10650D6J | WeEn Semiconductors | Description: DIODE SIL CARBIDE 650V 10A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 300pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: DPAK Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 250 µA @ 650 V | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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| NXPSC10650D6J | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; DPAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: DPAK Kind of package: reel; tape Max. forward impulse current: 50A | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC10650D6J | WeEn Semiconductors | Schottky Diodes & Rectifiers NXPSC10650D6/DPAK/REEL 13" Q1/T1 *STANDARD MARK SMD | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC10650D6J | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 10A; DPAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: DPAK Kind of package: reel; tape Max. forward impulse current: 50A Anzahl je Verpackung: 2500 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC10650D6J | WeEn Semiconductors | Description: DIODE SIL CARBIDE 650V 10A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 300pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: DPAK Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 250 µA @ 650 V | auf Bestellung 7214 Stücke: Lieferzeit 21-28 Tag (e) |
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| NXPSC10650DJ | WeEn Semiconductors | Schottky Diodes & Rectifiers NXPSC10650DJ/DPAK/REEL 13" Q1/T1 | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC10650DJ | WeEn Semiconductors | Description: DIODE SIL CARBIDE 650V 10A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 300pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: DPAK Operating Temperature - Junction: 175°C (Max) Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 250 µA @ 650 V | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC10650Q | Ween | Rectifier Diode Schottky 650V 10A 2-Pin(2+Tab) TO-220AC | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC10650Q | WeEn Semiconductors | Schottky Diodes & Rectifiers Silicon Carbide Diode | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC10650Q | WeEn Semiconductor(Hong Kong)Co.,Limited | Rectifier Diode Schottky 650V 10A 2-Pin(2+Tab) TO-220AC | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC10650Q | WeEn Semiconductors | Description: DIODE SIL CARB 650V 10A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 300pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max) Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 250 µA @ 650 V | auf Bestellung 1941 Stücke: Lieferzeit 21-28 Tag (e) |
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| NXPSC10650X6Q | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220FP-2 Kind of package: tube Max. forward impulse current: 50A Anzahl je Verpackung: 1000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC10650X6Q | WeEn Semiconductors | Schottky Diodes & Rectifiers NXPSC10650X6/TO-220F/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC10650X6Q | WeEn Semiconductors | Description: DIODE SIL CARB 650V 10A TO220F Packaging: Bulk Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 300pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-220F Operating Temperature - Junction: 175°C (Max) Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 250 µA @ 650 V | auf Bestellung 2995 Stücke: Lieferzeit 21-28 Tag (e) |
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| NXPSC10650X6Q | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10A; TO220FP-2; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A Semiconductor structure: single diode Case: TO220FP-2 Kind of package: tube Max. forward impulse current: 50A | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC10650XQ | WeEn Semiconductors | Description: DIODE SIL CARB 650V 10A TO220F Packaging: Tube Package / Case: TO-220-2 Full Pack, Isolated Tab Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 300pF @ 1V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-220F Operating Temperature - Junction: 175°C (Max) Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 250 µA @ 650 V | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC10650XQ | WeEn Semiconductors | Schottky Diodes & Rectifiers NXPSC10650XQ/TO220F-2L/STANDARD M | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC126506Q | WeEn Semiconductors | Schottky Diodes & Rectifiers NXPSC12650/TO-220AC/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC126506Q | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 12A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 72A | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC126506Q | WEEN SEMICONDUCTORS | Description: WEEN SEMICONDUCTORS - NXPSC126506Q - SiC-Schottky-Diode, Einfach, 650 V, 12 A, 18 nC, TO-220AC tariffCode: 85411000 Bauform - Diode: TO-220AC Kapazitive Gesamtladung: 18nC rohsCompliant: YES Diodenmontage: Durchsteckmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - usEccn: EAR99 Durchschnittlicher Durchlassstrom: 12A euEccn: NLR Wiederkehrende Spitzensperrspannung: 650V Anzahl der Pins: 2 Pins Produktpalette: - productTraceability: No Betriebstemperatur, max.: 175°C | auf Bestellung 975 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| NXPSC126506Q | WeEn Semiconductors | Description: DIODE SIL CARB 650V 12A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 380pF @ 1V, 1MHz Current - Average Rectified (Io): 12A Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 12 A Current - Reverse Leakage @ Vr: 80 µA @ 650 V | auf Bestellung 990 Stücke: Lieferzeit 21-28 Tag (e) |
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| NXPSC126506Q | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 12A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 12A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 72A Anzahl je Verpackung: 1000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC12650B6J | WeEn Semiconductors | Schottky Diodes & Rectifiers NXPSC12650B/TO263/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC12650B6J | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 12A; D2PAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 12A Semiconductor structure: single diode Case: D2PAK Kind of package: reel; tape Max. forward impulse current: 72A | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC12650B6J | WeEn Semiconductors | Description: SILICON CARBIDE POWER DIODE | auf Bestellung 5600 Stücke: Lieferzeit 21-28 Tag (e) |
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| NXPSC12650B6J | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 12A; D2PAK; reel,tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Max. off-state voltage: 650V Load current: 12A Semiconductor structure: single diode Case: D2PAK Kind of package: reel; tape Max. forward impulse current: 72A Anzahl je Verpackung: 800 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC12650B6J | WeEn Semiconductors | Description: SILICON CARBIDE POWER DIODE | auf Bestellung 6298 Stücke: Lieferzeit 21-28 Tag (e) |
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| NXPSC166506Q | WEEN SEMICONDUCTORS | Description: WEEN SEMICONDUCTORS - NXPSC166506Q - SiC-Schottky-Diode, Einfach, 650 V, 16 A, 26 nC, TO-220AC tariffCode: 85411000 Bauform - Diode: TO-220AC Kapazitive Gesamtladung: 26nC rohsCompliant: YES Diodenmontage: Durchsteckmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - usEccn: EAR99 Durchschnittlicher Durchlassstrom: 16A euEccn: NLR Wiederkehrende Spitzensperrspannung: 650V Anzahl der Pins: 2 Pins Produktpalette: - productTraceability: No Betriebstemperatur, max.: 175°C | auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| NXPSC166506Q | WeEn Semiconductors | Description: DIODE SIL CARB 650V 16A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 534pF @ 1V, 1MHz Current - Average Rectified (Io): 16A Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max) Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A Current - Reverse Leakage @ Vr: 100 µA @ 650 V | auf Bestellung 3003 Stücke: Lieferzeit 21-28 Tag (e) |
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| NXPSC166506Q | WeEn Semiconductors | Schottky Diodes & Rectifiers NXPSC16650/TO-220AC/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC166506Q | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO220AC; tube Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO220AC Max. off-state voltage: 650V Load current: 16A Semiconductor structure: single diode Max. forward impulse current: 96A | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC166506Q | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 16A; TO220AC; tube Mounting: THT Kind of package: tube Type of diode: Schottky rectifying Technology: SiC Case: TO220AC Max. off-state voltage: 650V Load current: 16A Semiconductor structure: single diode Max. forward impulse current: 96A Anzahl je Verpackung: 1000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC16650B6J | WeEn Semiconductors | Description: DIODE SIL CARBIDE 650V 16A D2PAK Packaging: Tube Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 534pF @ 1V, 1MHz Current - Average Rectified (Io): 16A Supplier Device Package: D2PAK Operating Temperature - Junction: 175°C (Max) Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 16 A Current - Reverse Leakage @ Vr: 100 µA @ 650 V | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC16650B6J | WeEn Semiconductors | Schottky Diodes & Rectifiers NXPSC16650B/TO263/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC16650B6J | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 16A; D2PAK; reel,tape Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Case: D2PAK Max. off-state voltage: 650V Load current: 16A Semiconductor structure: single diode Max. forward impulse current: 96A | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC16650B6J | WeEn Semiconductors | Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SiC; SMD; 650V; 16A; D2PAK; reel,tape Kind of package: reel; tape Type of diode: Schottky rectifying Technology: SiC Mounting: SMD Case: D2PAK Max. off-state voltage: 650V Load current: 16A Semiconductor structure: single diode Max. forward impulse current: 96A Anzahl je Verpackung: 800 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC16650B6J | Ween | NXPSC16650B/TO263/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC206506Q | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 100A | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC206506Q | WeEn Semiconductors | Description: DIODE SIL CARB 650V 20A TO220AC Packaging: Tube Package / Case: TO-220-2 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 600pF @ 1V, 1MHz Current - Average Rectified (Io): 20A Supplier Device Package: TO-220AC Operating Temperature - Junction: 175°C (Max) Part Status: Last Time Buy Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A Current - Reverse Leakage @ Vr: 500 µA @ 650 V | auf Bestellung 3211 Stücke: Lieferzeit 21-28 Tag (e) |
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| NXPSC206506Q | WEEN SEMICONDUCTORS | Description: WEEN SEMICONDUCTORS - NXPSC206506Q - SiC-Schottky-Diode, Einfach, 650 V, 20 A, 28 nC, TO-220AC tariffCode: 85411000 Bauform - Diode: TO-220AC Kapazitive Gesamtladung: 28nC rohsCompliant: YES Diodenmontage: Durchsteckmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Einfach Qualifikation: - usEccn: EAR99 Durchschnittlicher Durchlassstrom: 20A euEccn: NLR Wiederkehrende Spitzensperrspannung: 650V Anzahl der Pins: 2 Pins Produktpalette: - productTraceability: No Betriebstemperatur, max.: 175°C | auf Bestellung 1781 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| NXPSC206506Q | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 20A; TO220AC; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 20A Semiconductor structure: single diode Case: TO220AC Kind of package: tube Max. forward impulse current: 100A | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC20650Q | WeEn Semiconductors | Diodes - General Purpose, Power, Switching NXPSC20650/TO-220AC/STANDARD M | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC20650W-AQ | WeEn Semiconductors | Description: SILICON CARBIDE POWER DIODE | auf Bestellung 480 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| NXPSC20650W-AQ | WEEN SEMICONDUCTORS | Description: WEEN SEMICONDUCTORS - NXPSC20650W-AQ - SiC-Schottky-Diode, Zweifach, gemeinsame Kathode, 650 V, 20 A, 16 nC, TO-247 tariffCode: 85411000 Bauform - Diode: TO-247 Kapazitive Gesamtladung: 16nC rohsCompliant: YES Diodenmontage: Durchsteckmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Zweifach, gemeinsame Kathode Qualifikation: AEC-Q101 usEccn: EAR99 Durchschnittlicher Durchlassstrom: 20A euEccn: NLR Wiederkehrende Spitzensperrspannung: 650V Anzahl der Pins: 3 Pins Produktpalette: - productTraceability: No Betriebstemperatur, max.: 175°C | auf Bestellung 238 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| NXPSC20650W-AQ | WeEn Semiconductors | Schottky Diodes & Rectifiers Dual Silicon Carbide Schottky Diode | auf Bestellung 240 Stücke: Lieferzeit 14-28 Tag (e) |
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| NXPSC20650W-AQ | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Max. load current: 20A Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 50A Max. forward voltage: 2.1V Application: automotive industry | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC20650W-AQ | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Max. load current: 20A Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 50A Max. forward voltage: 2.1V Application: automotive industry | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC20650W6Q | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Max. load current: 20A Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 50A | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC20650W6Q | WeEn Semiconductors | Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 650V; 10Ax2; TO247-3; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 650V Load current: 10A x2 Max. load current: 20A Semiconductor structure: common cathode; double Case: TO247-3 Kind of package: tube Max. forward impulse current: 50A | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC20650W6Q | WeEn Semiconductors | Description: DIODE ARR SIC 650V 20A TO247-3 Packaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-247-3 Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 250 µA @ 650 V | auf Bestellung 707 Stücke: Lieferzeit 21-28 Tag (e) |
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| NXPSC20650W6Q | WEEN SEMICONDUCTORS | Description: WEEN SEMICONDUCTORS - NXPSC20650W6Q - SiC-Schottky-Diode, Zweifach, gemeinsame Kathode, 650 V, 20 A, 16 nC, TO-247 tariffCode: 85411000 Bauform - Diode: TO-247 Kapazitive Gesamtladung: 16nC rohsCompliant: YES Diodenmontage: Durchsteckmontage hazardous: false rohsPhthalatesCompliant: YES Diodenkonfiguration: Zweifach, gemeinsame Kathode Qualifikation: - usEccn: EAR99 Durchschnittlicher Durchlassstrom: 20A euEccn: NLR Wiederkehrende Spitzensperrspannung: 650V Anzahl der Pins: 3 Pins Produktpalette: - productTraceability: No Betriebstemperatur, max.: 175°C | auf Bestellung 220 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| NXPSC20650W6Q | WeEn Semiconductors | Schottky Diodes & Rectifiers NXPSC20650W6/TO247/STANDARD MARKING * HORIZONTAL, RAIL PACK | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC20650WQ | Ween | NXPSC20650WQ/TO-247/STANDARD M | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC20650WQ | WeEn Semiconductors | Description: DIODE ARRAY SCHOTTKY 650V TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 20A Supplier Device Package: TO-247-3 Operating Temperature - Junction: 175°C (Max) Part Status: Discontinued at Digi-Key Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 10 A Current - Reverse Leakage @ Vr: 250 µA @ 650 V | Produkt ist nicht verfügbar | |||||||||||||||
| NXPSC20650WQ | WeEn Semiconductors | Schottky Diodes & Rectifiers NXPSC20650WQ/TO-247/STANDARD M | Produkt ist nicht verfügbar |