Produkte > VN2
| Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis ohne MwSt | ||||||||||||||
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| VN2 | Carlo Gavazzi | Liquid Level Sensors LVL SNSR COND 2 PROBE NYLON | auf Bestellung 19 Stücke: Lieferzeit 14-28 Tag (e) |
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| VN2 | CARLO GAVAZZI | C-GAVAZZI-VN2 Monitoring Relays | auf Bestellung 1 Stücke: Lieferzeit 7-14 Tag (e) |
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| VN2 | Carlo Gavazzi Inc. | Description: LVL SEN COND 2 PROBE NYLON | auf Bestellung 2 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| VN20-080L-192 | Cer | SMD 08+ | auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| VN20-2019 | Cinch Connectivity Solutions | Description: CONN N TYPE PLUG R/A SOLDER Packaging: Bulk Connector Type: Plug, Male Pin Contact Termination: Solder Mounting Type: Free Hanging (In-Line), Right Angle Cable Group: RG-214 Fastening Type: Threaded Connector Style: N Type Shield Termination: Crimp Part Status: Active Number of Ports: 1 | Produkt ist nicht verfügbar | |||||||||||||||
| VN20-2020 | Vitelec / Cinch Connectivity Solutions | RF Connectors / Coaxial Connectors N R/A Crimp Plug RG 213 | Produkt ist nicht verfügbar | |||||||||||||||
| VN20-2020 | Cinch Connectivity Solutions | Description: CONN N TYPE PLUG R/A 50OHM SOLDR Packaging: Bulk Connector Type: Plug, Male Pin Contact Termination: Solder Impedance: 50 Ohms Mounting Type: Free Hanging (In-Line), Right Angle Cable Group: RG-213 Fastening Type: Threaded Connector Style: N Type Housing Color: Silver Shield Termination: Crimp Center Contact Material: Brass Frequency - Max: 4 GHz Number of Ports: 1 | Produkt ist nicht verfügbar | |||||||||||||||
| VN20-2031 | Cinch Connectivity Solutions | Description: CONN N TYPE PLUG R/A SOLDER | Produkt ist nicht verfügbar | |||||||||||||||
| VN20-2050 | Cinch Connectivity Solutions | Description: CONN N TYPE PLUG R/A SOLDER Packaging: Bulk Connector Type: Plug, Male Pin Contact Termination: Solder Mounting Type: Free Hanging (In-Line), Right Angle Cable Group: RG-223 Fastening Type: Threaded Connector Style: N Type Shield Termination: Crimp Part Status: Active Number of Ports: 1 | Produkt ist nicht verfügbar | |||||||||||||||
| VN20-2050 | Vitelec / Cinch Connectivity Solutions | RF Connectors / Coaxial Connectors N R/A Crimp Plug RG 223 | Produkt ist nicht verfügbar | |||||||||||||||
| VN20-2051 | Vitelec / Cinch Connectivity Solutions | RF Connectors / Coaxial Connectors N R/A Crimp Plug RG 58 | Produkt ist nicht verfügbar | |||||||||||||||
| VN20-2051 | Cinch Connectivity Solutions | Description: CONN N TYPE PLUG R/A 50OHM SOLDR | Produkt ist nicht verfügbar | |||||||||||||||
| VN2010 | auf Bestellung 13950 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| VN2010L | auf Bestellung 1750 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| VN2010L | Vishay / Siliconix | MOSFET 200V 0.19A 0.8W | Produkt ist nicht verfügbar | |||||||||||||||
| VN2010L-TA | Vishay | Vishay | Produkt ist nicht verfügbar | |||||||||||||||
| VN2010L-TR1 | Vishay | Vishay USE TN2404KL-TR1 | Produkt ist nicht verfügbar | |||||||||||||||
| VN2010LA | auf Bestellung 300 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| VN2020L | auf Bestellung 12350 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| VN20A | auf Bestellung 1005 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| VN20A1500000G | Amphenol Anytek | Pluggable Terminal Blocks TB RIS CLA 180D SOL | Produkt ist nicht verfügbar | |||||||||||||||
| VN20AN Produktcode: 167209 | Relais | Produkt ist nicht verfügbar | ||||||||||||||||
| VN20AN | ST | auf Bestellung 16000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
| VN20AN | ST | 01+ TO220-5 | auf Bestellung 1080 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| VN20H | auf Bestellung 30 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| VN20N | ST | SOP 16 | auf Bestellung 201000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| VN20N | ST | 0305+ ZIP5 | auf Bestellung 30 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| VN21 | STMicroelectronics | Description: IC PWR DRVR N-CH 1:1 5PENTAWATT Features: Status Flag Packaging: Tube Package / Case: Pentawatt-5 (Vertical, Bent and Staggered Leads) Output Type: N-Channel Mounting Type: Through Hole Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 50mOhm (Max) Input Type: Non-Inverting Voltage - Load: 5.5V ~ 26V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 23A Ratio - Input:Output: 1:1 Supplier Device Package: 5-PENTAWATT Fault Protection: Open Load Detect, Over Temperature | Produkt ist nicht verfügbar | |||||||||||||||
| VN21 | ST | 01+ TO220-5 | auf Bestellung 3080 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| VN21 | STMicroelectronics | Power Switch ICs - Power Distribution High Side for SSR | Produkt ist nicht verfügbar | |||||||||||||||
| VN21(012Y) | STMicroelectronics | Description: IC PWR DRVR N-CH 1:1 5PENTAWATT Packaging: Tube Features: Status Flag Package / Case: Pentawatt-5 (Straight Leads, Staggered Depth) Output Type: N-Channel Mounting Type: Through Hole Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 50mOhm (Max) Input Type: Non-Inverting Voltage - Load: 5.5V ~ 26V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 23A Ratio - Input:Output: 1:1 Supplier Device Package: 5-PENTAWATT Fault Protection: Open Load Detect, Over Temperature | Produkt ist nicht verfügbar | |||||||||||||||
| VN21-11-E | STMicroelectronics | Description: IC PWR DRVR N-CH 1:1 5PENTAWATT | Produkt ist nicht verfügbar | |||||||||||||||
| VN21-11-E | auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| VN21-12-E | STMicroelectronics | Description: IC PWR DRVR N-CH 1:1 5PENTAWATT | Produkt ist nicht verfügbar | |||||||||||||||
| VN21-12-E | auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| VN21-E | ST | auf Bestellung 8800 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
| VN21-E | STMicroelectronics | Power Switch Hi Side 1-OUT 23A 0.05Ohm 5-Pin(5+Tab) PENTAWATT Tube | Produkt ist nicht verfügbar | |||||||||||||||
| VN21-E | STMicroelectronics | Power Switch ICs - Power Distribution | Produkt ist nicht verfügbar | |||||||||||||||
| VN21-E | STMicroelectronics | Description: IC PWR DRVR N-CH 1:1 5PENTAWATT Features: Status Flag Packaging: Tube Package / Case: Pentawatt-5 (Vertical, Bent and Staggered Leads) Output Type: N-Channel Mounting Type: Through Hole Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: High Side Rds On (Typ): 50mOhm (Max) Input Type: Non-Inverting Voltage - Load: 5.5V ~ 26V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 23A Ratio - Input:Output: 1:1 Supplier Device Package: 5-PENTAWATT Fault Protection: Open Load Detect, Over Temperature | Produkt ist nicht verfügbar | |||||||||||||||
| VN2106N3-G | Microchip Technology | Trans MOSFET N-CH Si 60V 0.3A 3-Pin TO-92 Bag | Produkt ist nicht verfügbar | |||||||||||||||
| VN2106N3-G | Microchip Technology | Trans MOSFET N-CH Si 60V 0.3A 3-Pin TO-92 Bag | auf Bestellung 584 Stücke: Lieferzeit 14-21 Tag (e) |
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| VN2106N3-G | Microchip Technology | MOSFET 60V 4Ohm | auf Bestellung 4704 Stücke: Lieferzeit 14-28 Tag (e) |
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| VN2106N3-G | Microchip Technology | Description: MOSFET N-CH 60V 300MA TO92-3 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300mA (Tj) Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V | auf Bestellung 6609 Stücke: Lieferzeit 21-28 Tag (e) |
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| VN2106N3-G | MICROCHIP | Description: MICROCHIP - VN2106N3-G - Leistungs-MOSFET, n-Kanal, 60 V, 300 mA, 3 ohm, TO-92, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 300mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.4V euEccn: NLR Verlustleistung: 1W Bauform - Transistor: TO-92 Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 3ohm | auf Bestellung 4362 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| VN2106N3-G | Microchip Technology | Trans MOSFET N-CH Si 60V 0.3A 3-Pin TO-92 Bag | Produkt ist nicht verfügbar | |||||||||||||||
| VN2106N3-G | MICROCHIP TECHNOLOGY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.6A; 1W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Pulsed drain current: 0.6A Power dissipation: 1W Case: TO92 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: THT Kind of package: bulk Kind of channel: enhanced | auf Bestellung 584 Stücke: Lieferzeit 14-21 Tag (e) |
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| VN2106N3-G | MICROCHIP TECHNOLOGY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 0.6A; 1W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Pulsed drain current: 0.6A Power dissipation: 1W Case: TO92 Gate-source voltage: ±20V On-state resistance: 4Ω Mounting: THT Kind of package: bulk Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 584 Stücke: Lieferzeit 7-14 Tag (e) |
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| VN2106N3-G | Microchip Technology | Trans MOSFET N-CH Si 60V 0.3A 3-Pin TO-92 Bag | Produkt ist nicht verfügbar | |||||||||||||||
| VN2106N3-G P005 | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| VN2106N3-G P013 | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| VN2110K1 | SUPERTEX | auf Bestellung 1580 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
| VN2110K1 | SUPERTEXINC | 07+ SOT-23 | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| VN2110K1 | SUPERTEX | 00+ | auf Bestellung 1545 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| VN2110K1-G | MICROCHIP TECHNOLOGY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.6A; 360mW; SOT23-3 Mounting: SMD Case: SOT23-3 Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 0.6A Drain-source voltage: 100V On-state resistance: 4Ω Type of transistor: N-MOSFET Power dissipation: 0.36W Polarisation: unipolar Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| VN2110K1-G | Microchip Technology | Trans MOSFET N-CH Si 100V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 2082 Stücke: Lieferzeit 14-21 Tag (e) |
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| VN2110K1-G | MICROCHIP TECHNOLOGY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 0.6A; 360mW; SOT23-3 Mounting: SMD Case: SOT23-3 Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 0.6A Drain-source voltage: 100V On-state resistance: 4Ω Type of transistor: N-MOSFET Power dissipation: 0.36W Polarisation: unipolar | Produkt ist nicht verfügbar | |||||||||||||||
| VN2110K1-G | Microchip Technology | Trans MOSFET N-CH Si 100V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 2082 Stücke: Lieferzeit 14-21 Tag (e) |
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| VN2110K1-G | Microchip Technology | Description: MOSFET N-CH 100V 200MA SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Tj) Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V Power Dissipation (Max): 360mW (Tc) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V | auf Bestellung 7163 Stücke: Lieferzeit 21-28 Tag (e) |
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| VN2110K1-G | MICROCHIP | Description: MICROCHIP - VN2110K1-G - Leistungs-MOSFET, n-Kanal, 100 V, 200 mA, 3 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 200mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.4V euEccn: NLR Verlustleistung: 360mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 3ohm | auf Bestellung 4562 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| VN2110K1-G | Microchip Technology | Trans MOSFET N-CH Si 100V 0.2A 3-Pin SOT-23 T/R | auf Bestellung 18000 Stücke: Lieferzeit 14-21 Tag (e) |
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| VN2110K1-G | Microchip Technology | Trans MOSFET N-CH Si 100V 0.2A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||
| VN2110K1-G | Microchip Technology | Description: MOSFET N-CH 100V 200MA SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Tj) Rds On (Max) @ Id, Vgs: 4Ohm @ 500mA, 10V Power Dissipation (Max): 360mW (Tc) Vgs(th) (Max) @ Id: 2.4V @ 1mA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) |
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| VN2110K1-G | MICROCHIP | Description: MICROCHIP - VN2110K1-G - Leistungs-MOSFET, n-Kanal, 100 V, 200 mA, 3 ohm, SOT-23, Oberflächenmontage tariffCode: 85412100 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 200mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.4V euEccn: NLR Verlustleistung: 360mW Bauform - Transistor: SOT-23 Anzahl der Pins: 3Pin(s) Produktpalette: Multicomp Pro RJ45 Adapter productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 3ohm | auf Bestellung 4562 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| VN2110K1-G | Microchip Technology | Trans MOSFET N-CH Si 100V 0.2A 3-Pin SOT-23 T/R | Produkt ist nicht verfügbar | |||||||||||||||
| VN2110K1-G | Microchip Technology | MOSFET 100V 4Ohm | auf Bestellung 12100 Stücke: Lieferzeit 14-28 Tag (e) |
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| VN2110K1/N1AC | auf Bestellung 3000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| VN21A1500000G | Amphenol Anytek | Description: TERM BLK 21P SIDE ENT 2.54MM PCB Packaging: Bulk Color: Green Mounting Type: Through Hole Wire Gauge: 18-30 AWG Pitch: 0.100" (2.54mm) Mating Orientation: Horizontal with Board Positions Per Level: 21 Wire Termination: Screw - Rising Cage Clamp Current: 6 A Number of Levels: 1 Voltage: 150 V | Produkt ist nicht verfügbar | |||||||||||||||
| VN21A1500000G | Amphenol Anytek | Pluggable Terminal Blocks TB RIS CLA 180D SOL | Produkt ist nicht verfügbar | |||||||||||||||
| VN21L | auf Bestellung 250 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| VN21SP | ST | 09+ HSOP10 | auf Bestellung 1008 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| VN21SP | ST | auf Bestellung 350 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
| VN220 | ST | 01+ TO220-5 | auf Bestellung 280 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| VN220 | STMicroelectronics | STMicroelectronics ABD VIPOWER | Produkt ist nicht verfügbar | |||||||||||||||
| VN2204N3 | auf Bestellung 20000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| VN2206 | auf Bestellung 5800 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| VN2206N2 | SILICONI | auf Bestellung 980 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
| VN2206N3 | auf Bestellung 12500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| VN2210 | auf Bestellung 5800 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| VN2210N2 | Microchip Technology | Trans MOSFET N-CH Si 100V 1.7A 3-Pin TO-39 Bag | auf Bestellung 85 Stücke: Lieferzeit 14-21 Tag (e) |
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| VN2210N2 | Microchip Technology | Description: MOSFET N-CH 100V 1.7A TO39 Packaging: Bag Package / Case: TO-205AD, TO-39-3 Metal Can Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.7A (Tj) Rds On (Max) @ Id, Vgs: 350mOhm @ 4A, 10V Power Dissipation (Max): 360mW (Tc) Vgs(th) (Max) @ Id: 2.4V @ 10mA Supplier Device Package: TO-39 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V | auf Bestellung 137 Stücke: Lieferzeit 21-28 Tag (e) |
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| VN2210N2 | MICROCHIP TECHNOLOGY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 8A; 360mW; TO39 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Pulsed drain current: 8A Power dissipation: 0.36W Case: TO39 Gate-source voltage: ±20V On-state resistance: 0.35Ω Mounting: THT Kind of package: bulk Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| VN2210N2 | Microchip Technology | Trans MOSFET N-CH Si 100V 1.7A 3-Pin TO-39 Bag | auf Bestellung 253 Stücke: Lieferzeit 14-21 Tag (e) |
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| VN2210N2 | Microchip Technology | MOSFET 100V 0.35Ohm | auf Bestellung 398 Stücke: Lieferzeit 315-329 Tag (e) |
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| VN2210N2 | MICROCHIP TECHNOLOGY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 8A; 360mW; TO39 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Pulsed drain current: 8A Power dissipation: 0.36W Case: TO39 Gate-source voltage: ±20V On-state resistance: 0.35Ω Mounting: THT Kind of package: bulk Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| VN2210N3 | auf Bestellung 907 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| VN2210N3 | Microchip Technology | MOSFET 100V 0.35Ohm | Produkt ist nicht verfügbar | |||||||||||||||
| VN2210N3-G | Microchip Technology | Description: MOSFET N-CH 100V 1.2A TO92-3 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.2A (Tj) Rds On (Max) @ Id, Vgs: 350mOhm @ 4A, 10V Power Dissipation (Max): 740mW (Tc) Vgs(th) (Max) @ Id: 2.4V @ 10mA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V | auf Bestellung 3826 Stücke: Lieferzeit 21-28 Tag (e) |
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| VN2210N3-G | Microchip Technology | Trans MOSFET N-CH Si 100V 1.2A 3-Pin TO-92 Bag | Produkt ist nicht verfügbar | |||||||||||||||
| VN2210N3-G | MICROCHIP TECHNOLOGY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 8A; 740mW; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Pulsed drain current: 8A Power dissipation: 0.74W Case: TO92 Gate-source voltage: ±20V On-state resistance: 0.35Ω Mounting: THT Kind of package: bulk Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| VN2210N3-G | Microchip Technology | Trans MOSFET N-CH Si 100V 1.2A 3-Pin TO-92 Bag | Produkt ist nicht verfügbar | |||||||||||||||
| VN2210N3-G | MICROCHIP TECHNOLOGY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 8A; 740mW; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Pulsed drain current: 8A Power dissipation: 0.74W Case: TO92 Gate-source voltage: ±20V On-state resistance: 0.35Ω Mounting: THT Kind of package: bulk Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| VN2210N3-G | Microchip Technology | Trans MOSFET N-CH Si 100V 1.2A 3-Pin TO-92 Bag | Produkt ist nicht verfügbar | |||||||||||||||
| VN2210N3-G | Microchip Technology | MOSFET 100V 0.35Ohm | auf Bestellung 986 Stücke: Lieferzeit 14-28 Tag (e) |
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| VN2222 | auf Bestellung 5507 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| VN2222L | Vishay | auf Bestellung 2100 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
| VN2222L | Vishay / Siliconix | MOSFET 60V 0.23A 0.8W | Produkt ist nicht verfügbar | |||||||||||||||
| VN2222LL | Vishay / Siliconix | MOSFET 60V 0.23A 0.8W | Produkt ist nicht verfügbar | |||||||||||||||
| VN2222LL | Microchip Technology | MOSFET 60V 7.5Ohm | Produkt ist nicht verfügbar | |||||||||||||||
| VN2222LL | auf Bestellung 3800 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| VN2222LL | Diodes Incorporated | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| VN2222LL | onsemi | Description: MOSFET N-CH 60V 150MA TO92-3 | Produkt ist nicht verfügbar | |||||||||||||||
| VN2222LL | onsemi | MOSFET 60V 150mA N-Channel | Produkt ist nicht verfügbar | |||||||||||||||
| VN2222LL-G | Microchip Technology | Trans MOSFET N-CH Si 60V 0.23A 3-Pin TO-92 Bag | auf Bestellung 1748 Stücke: Lieferzeit 14-21 Tag (e) |
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| VN2222LL-G | MICROCHIP | Description: MICROCHIP - VN2222LL-G - Leistungs-MOSFET, n-Kanal, 60 V, 230 mA, 7.5 ohm, TO-92, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 60V rohsCompliant: YES Dauer-Drainstrom Id: 230mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2.5V euEccn: NLR Verlustleistung: 1W Bauform - Transistor: TO-92 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 7.5ohm | auf Bestellung 5530 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| VN2222LL-G | MICROCHIP TECHNOLOGY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 230mA; Idm: 1A; 1W; TO92 Mounting: THT Drain-source voltage: 60V Drain current: 0.23A On-state resistance: 7.5Ω Type of transistor: N-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of package: bulk Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 1A Case: TO92 Anzahl je Verpackung: 1 Stücke | auf Bestellung 382 Stücke: Lieferzeit 7-14 Tag (e) |
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| VN2222LL-G | Microchip Technology | Description: MOSFET N-CH 60V 230MA TO92-3 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 230mA (Tj) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Power Dissipation (Max): 400mW (Ta), 1W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V | auf Bestellung 3544 Stücke: Lieferzeit 21-28 Tag (e) |
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| VN2222LL-G | Microchip Technology | MOSFET 60V 7.5Ohm | auf Bestellung 26930 Stücke: Lieferzeit 14-28 Tag (e) |
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| VN2222LL-G | Microchip Technology | Trans MOSFET N-CH Si 60V 0.23A 3-Pin TO-92 Bag | auf Bestellung 67 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| VN2222LL-G Produktcode: 103104 | Transistoren > MOSFET N-CH ZCODE: 8541290010 | Produkt ist nicht verfügbar | ||||||||||||||||
| VN2222LL-G | Microchip Technology | Trans MOSFET N-CH Si 60V 0.23A 3-Pin TO-92 Bag | auf Bestellung 975 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| VN2222LL-G | MICROCHIP TECHNOLOGY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 230mA; Idm: 1A; 1W; TO92 Mounting: THT Drain-source voltage: 60V Drain current: 0.23A On-state resistance: 7.5Ω Type of transistor: N-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of package: bulk Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 1A Case: TO92 | auf Bestellung 382 Stücke: Lieferzeit 14-21 Tag (e) |
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| VN2222LL-G P005 | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| VN2222LL-G-P003 | Microchip Technology | Description: MOSFET N-CH 60V 230MA TO92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 230mA (Tj) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Power Dissipation (Max): 400mW (Ta), 1W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V | auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) |
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| VN2222LL-G-P003 | Microchip Technology | Trans MOSFET N-CH Si 60V 0.23A 3-Pin TO-92 T/R | Produkt ist nicht verfügbar | |||||||||||||||
| VN2222LL-G-P003 | Microchip Technology | Trans MOSFET N-CH Si 60V 0.23A 3-Pin TO-92 T/R | Produkt ist nicht verfügbar | |||||||||||||||
| VN2222LL-G-P003 | MICROCHIP TECHNOLOGY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 230mA; Idm: 1A; 1W; TO92 Mounting: THT Drain-source voltage: 60V Drain current: 0.23A On-state resistance: 7.5Ω Type of transistor: N-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 1A Case: TO92 | Produkt ist nicht verfügbar | |||||||||||||||
| VN2222LL-G-P003 | Microchip Technology | Description: MOSFET N-CH 60V 230MA TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 230mA (Tj) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Power Dissipation (Max): 400mW (Ta), 1W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V | auf Bestellung 2004 Stücke: Lieferzeit 21-28 Tag (e) |
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| VN2222LL-G-P003 | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | auf Bestellung 2265 Stücke: Lieferzeit 14-28 Tag (e) |
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| VN2222LL-G-P003 | MICROCHIP TECHNOLOGY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 230mA; Idm: 1A; 1W; TO92 Mounting: THT Drain-source voltage: 60V Drain current: 0.23A On-state resistance: 7.5Ω Type of transistor: N-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of package: reel; tape Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 1A Case: TO92 Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| VN2222LL-G-P013 | MICROCHIP TECHNOLOGY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 230mA; Idm: 1A; 1W; TO92 Mounting: THT Drain-source voltage: 60V Drain current: 0.23A On-state resistance: 7.5Ω Type of transistor: N-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of package: Ammo Pack Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 1A Case: TO92 | Produkt ist nicht verfügbar | |||||||||||||||
| VN2222LL-G-P013 | Microchip Technology | Description: MOSFET N-CH 60V 230MA TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 230mA (Tj) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Power Dissipation (Max): 400mW (Ta), 1W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V | auf Bestellung 2415 Stücke: Lieferzeit 21-28 Tag (e) |
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| VN2222LL-G-P013 | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | auf Bestellung 3431 Stücke: Lieferzeit 14-28 Tag (e) |
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| VN2222LL-G-P013 | MICROCHIP TECHNOLOGY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 230mA; Idm: 1A; 1W; TO92 Mounting: THT Drain-source voltage: 60V Drain current: 0.23A On-state resistance: 7.5Ω Type of transistor: N-MOSFET Power dissipation: 1W Polarisation: unipolar Kind of package: Ammo Pack Kind of channel: enhanced Gate-source voltage: ±30V Pulsed drain current: 1A Case: TO92 Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| VN2222LL-G-P013 | Microchip Technology | Description: MOSFET N-CH 60V 230MA TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 230mA (Tj) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Power Dissipation (Max): 400mW (Ta), 1W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
| VN2222LL-G-P013 | Microchip Technology | Trans MOSFET N-CH Si 60V 0.23A 3-Pin TO-92 Ammo | Produkt ist nicht verfügbar | |||||||||||||||
| VN2222LL-TR1-E3 | VISHAY | TO92 | auf Bestellung 3745 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| VN2222LLG | ON Semiconductor | Trans MOSFET N-CH 60V 0.15A 3-Pin TO-92 Box | Produkt ist nicht verfügbar | |||||||||||||||
| VN2222LLG | onsemi | Description: MOSFET N-CH 60V 150MA TO92-3 | Produkt ist nicht verfügbar | |||||||||||||||
| VN2222LLG | auf Bestellung 3992 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| VN2222LLG | ON Semiconductor | MOSFET 60V 150mA N-Channel | Produkt ist nicht verfügbar | |||||||||||||||
| VN2222LLRL | onsemi | Description: SMALL SIGNAL N-CHANNEL MOSFET Packaging: Bulk Part Status: Active Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 150mA Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V Power Dissipation (Max): 400mW (Ta) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: TO-92 (TO-226) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 25 V | auf Bestellung 30204 Stücke: Lieferzeit 21-28 Tag (e) |
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| VN2222LLRLRA | onsemi | Description: MOSFET N-CH 60V 150MA TO92-3 | Produkt ist nicht verfügbar | |||||||||||||||
| VN2222LLRLRAG | onsemi | Description: MOSFET N-CH 60V 150MA TO92-3 | Produkt ist nicht verfügbar | |||||||||||||||
| VN2222LLRLRAG | ON Semiconductor | Trans MOSFET N-CH 60V 0.15A 3-Pin TO-92 T/R | Produkt ist nicht verfügbar | |||||||||||||||
| VN2222LLRLRAG | onsemi | Description: MOSFET N-CH 60V 150MA TO92-3 | Produkt ist nicht verfügbar | |||||||||||||||
| VN2222LM | auf Bestellung 8000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| VN2222M | auf Bestellung 31000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| VN2224N3-G | Microchip Technology | Trans MOSFET N-CH Si 240V 0.54A 3-Pin TO-92 Bag | auf Bestellung 724 Stücke: Lieferzeit 14-21 Tag (e) |
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| VN2224N3-G | Microchip Technology | Trans MOSFET N-CH Si 240V 0.54A 3-Pin TO-92 Bag | Produkt ist nicht verfügbar | |||||||||||||||
| VN2224N3-G | Microchip Technology | Description: MOSFET N-CH 240V 540MA TO92-3 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 540mA (Tj) Rds On (Max) @ Id, Vgs: 1.25Ohm @ 2A, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 3V @ 5mA Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 240 V Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V | auf Bestellung 240 Stücke: Lieferzeit 21-28 Tag (e) |
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| VN2224N3-G | MICROCHIP TECHNOLOGY | VN2224N3-G THT N channel transistors | Produkt ist nicht verfügbar | |||||||||||||||
| VN2224N3-G | Microchip Technology | MOSFET 240V 1.25Ohm | auf Bestellung 1120 Stücke: Lieferzeit 14-28 Tag (e) |
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| VN2224N3-G | Microchip Technology | Trans MOSFET N-CH Si 240V 0.54A 3-Pin TO-92 Bag | Produkt ist nicht verfügbar | |||||||||||||||
| VN2224N3-G P002 | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| VN2224N3-G P003 | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| VN2224N3-G P005 | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| VN2224N3-G P013 | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| VN2224N3-G P014 | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| VN22A1500000G | Amphenol Anytek | Pluggable Terminal Blocks TB RIS CLA 180D SOL | Produkt ist nicht verfügbar | |||||||||||||||
| VN2306N1 | auf Bestellung 523 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| VN2310N1 | auf Bestellung 523 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| VN23A1500000G | Amphenol Anytek | Pluggable Terminal Blocks TB RIS CLA 180D SOL | Produkt ist nicht verfügbar | |||||||||||||||
| VN2401L | auf Bestellung 218 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| VN2406 | auf Bestellung 3307 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| VN2406B | SILICONI | auf Bestellung 500 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
| VN2406D | VISHAY | auf Bestellung 2215 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
| VN2406L | Microchip Technology | MOSFET 240V 6Ohm | Produkt ist nicht verfügbar | |||||||||||||||
| VN2406L Produktcode: 30187 | Vishay | Transistoren > MOSFET N-CH Gehäuse: TO-92 Uds,V: 240 Idd,A: 0.18 Rds(on), Ohm: 6 Ciss, pF/Qg, nC: 135/ JHGF: THT | Produkt ist nicht verfügbar | |||||||||||||||
| VN2406L | onsemi | MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| VN2406L | Motorola | (TMOS,N-CH,240V,0.2A,TO-92) | auf Bestellung 45 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| VN2406L | Vishay / Siliconix | MOSFET 240V 0.18A 0.8W | Produkt ist nicht verfügbar | |||||||||||||||
| VN2406L-G | MICROCHIP TECHNOLOGY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 240V; 1A; 1W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 240V Pulsed drain current: 1A Power dissipation: 1W Case: TO92 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: THT Kind of package: bulk Kind of channel: enhanced Anzahl je Verpackung: 1000 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| VN2406L-G | Microchip Technology | Trans MOSFET N-CH Si 240V 0.19A 3-Pin TO-92 Bag | Produkt ist nicht verfügbar | |||||||||||||||
| VN2406L-G | Microchip Technology | Trans MOSFET N-CH Si 240V 0.19A 3-Pin TO-92 Bag | Produkt ist nicht verfügbar | |||||||||||||||
| VN2406L-G | MICROCHIP TECHNOLOGY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 240V; 1A; 1W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 240V Pulsed drain current: 1A Power dissipation: 1W Case: TO92 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: THT Kind of package: bulk Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| VN2406L-G | Microchip Technology | Trans MOSFET N-CH Si 240V 0.19A 3-Pin TO-92 Bag | auf Bestellung 151 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| VN2406L-G | Microchip Technology | Description: MOSFET N-CH 240V 190MA TO92-3 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 190mA (Tj) Rds On (Max) @ Id, Vgs: 6Ohm @ 500mA, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 240 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V | auf Bestellung 305 Stücke: Lieferzeit 21-28 Tag (e) |
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| VN2406L-G | Microchip Technology | MOSFET 240V 6Ohm | auf Bestellung 1884 Stücke: Lieferzeit 14-28 Tag (e) |
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| VN2406L-G P002 | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| VN2406L-G P003 | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| VN2406L-G P005 | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| VN2406L-G P013 | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| VN2406L-G P014 | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| VN2406LZL1 | onsemi | Description: SMALL SIGNAL FET Packaging: Bulk Part Status: Active | Produkt ist nicht verfügbar | |||||||||||||||
| VN2406M | Siliconix | Description: SMALL SIGNAL N-CHANNEL MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| VN2406M | auf Bestellung 1600 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| VN2410 | auf Bestellung 1831 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| VN2410L | Vishay / Siliconix | MOSFET 240V 0.18A 0.8W | Produkt ist nicht verfügbar | |||||||||||||||
| VN2410L | Vishay | Trans MOSFET N-CH Si 240V 0.18A 3-Pin TO-226AA | Produkt ist nicht verfügbar | |||||||||||||||
| VN2410L | Microchip Technology | MOSFET 240V 10Ohm | Produkt ist nicht verfügbar | |||||||||||||||
| VN2410L | onsemi | MOSFET 240V 200mA N-Channel | Produkt ist nicht verfügbar | |||||||||||||||
| VN2410L | SILICONI | auf Bestellung 10000 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
| VN2410L Produktcode: 119529 | Verschiedene Bauteile > Other components 3 | Produkt ist nicht verfügbar | ||||||||||||||||
| VN2410L-G | Microchip Technology | Trans MOSFET N-CH Si 240V 0.19A 3-Pin TO-92 Bag | Produkt ist nicht verfügbar | |||||||||||||||
| VN2410L-G | Microchip Technology | MOSFET 240V 10Ohm | auf Bestellung 1928 Stücke: Lieferzeit 14-28 Tag (e) |
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| VN2410L-G | MICROCHIP TECHNOLOGY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 240V; 190mA; Idm: 1.7A; 1W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 240V Drain current: 0.19A Pulsed drain current: 1.7A Power dissipation: 1W Case: TO92 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: THT Kind of package: bulk Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| VN2410L-G | Microchip Technology | Trans MOSFET N-CH Si 240V 0.19A 3-Pin TO-92 Bag | auf Bestellung 2775 Stücke: Lieferzeit 14-21 Tag (e) |
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| VN2410L-G | MICROCHIP TECHNOLOGY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 240V; 190mA; Idm: 1.7A; 1W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 240V Drain current: 0.19A Pulsed drain current: 1.7A Power dissipation: 1W Case: TO92 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: THT Kind of package: bulk Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| VN2410L-G | Microchip Technology | Description: MOSFET N-CH 240V 190MA TO92-3 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 190mA (Tj) Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 240 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V | auf Bestellung 811 Stücke: Lieferzeit 21-28 Tag (e) |
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| VN2410L-G | Microchip Technology | Trans MOSFET N-CH Si 240V 0.19A 3-Pin TO-92 Bag | Produkt ist nicht verfügbar | |||||||||||||||
| VN2410L-G P002 | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| VN2410L-G P003 | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| VN2410L-G-P013 | Microchip Technology | Trans MOSFET N-CH Si 240V 0.19A 3-Pin TO-92 Ammo | Produkt ist nicht verfügbar | |||||||||||||||
| VN2410L-G-P013 | MICROCHIP TECHNOLOGY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 240V; 190mA; Idm: 1.7A; 1W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 240V Drain current: 0.19A Pulsed drain current: 1.7A Power dissipation: 1W Case: TO92 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: THT Kind of package: Ammo Pack Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| VN2410L-G-P013 | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | auf Bestellung 1990 Stücke: Lieferzeit 14-28 Tag (e) |
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| VN2410L-G-P013 | Microchip Technology | Description: MOSFET N-CH 240V 190MA TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 190mA (Tj) Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 240 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
| VN2410L-G-P013 | MICROCHIP TECHNOLOGY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 240V; 190mA; Idm: 1.7A; 1W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 240V Drain current: 0.19A Pulsed drain current: 1.7A Power dissipation: 1W Case: TO92 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: THT Kind of package: Ammo Pack Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| VN2410L-G-P014 | MICROCHIP TECHNOLOGY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 240V; 190mA; Idm: 1.7A; 1W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 240V Drain current: 0.19A Pulsed drain current: 1.7A Power dissipation: 1W Case: TO92 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: THT Kind of package: Ammo Pack Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| VN2410L-G-P014 | Microchip Technology | Trans MOSFET N-CH Si 240V 0.19A 3-Pin TO-92 Ammo | Produkt ist nicht verfügbar | |||||||||||||||
| VN2410L-G-P014 | MICROCHIP TECHNOLOGY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 240V; 190mA; Idm: 1.7A; 1W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 240V Drain current: 0.19A Pulsed drain current: 1.7A Power dissipation: 1W Case: TO92 Gate-source voltage: ±20V On-state resistance: 10Ω Mounting: THT Kind of package: Ammo Pack Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| VN2410L-G-P014 | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | auf Bestellung 1921 Stücke: Lieferzeit 14-28 Tag (e) |
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| VN2410L-G-P014 | Microchip Technology | Description: MOSFET N-CH 240V 190MA TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 190mA (Tj) Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V Power Dissipation (Max): 1W (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 240 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
| VN2410LA | VIS | 99 TO-92 | auf Bestellung 2050 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| VN2410LG | ON Semiconductor | Trans MOSFET N-CH 240V 0.2A 3-Pin TO-92 Box | Produkt ist nicht verfügbar | |||||||||||||||
| VN2410LG | onsemi | MOSFET 240V 200mA N-Channel | Produkt ist nicht verfügbar | |||||||||||||||
| VN2410LG | onsemi | Description: MOSFET N-CH 240V 200MA TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V Power Dissipation (Max): 350mW (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-92 (TO-226) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 240 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
| VN2410LG | ON Semiconductor | Trans MOSFET N-CH 240V 0.2A 3-Pin TO-92 Box | Produkt ist nicht verfügbar | |||||||||||||||
| VN2410LS | auf Bestellung 5750 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| VN2410LZL1G | onsemi | Description: MOSFET N-CH 240V 200MA TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Mounting Type: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Ta) Rds On (Max) @ Id, Vgs: 10Ohm @ 500mA, 10V Power Dissipation (Max): 350mW (Tc) Vgs(th) (Max) @ Id: 2V @ 1mA Supplier Device Package: TO-92 (TO-226) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 240 V Input Capacitance (Ciss) (Max) @ Vds: 125 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
| VN2410LZL1G | auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| VN2410M | Siliconix | Description: MOSFET N-CH Packaging: Bulk Part Status: Active | auf Bestellung 48852 Stücke: Lieferzeit 21-28 Tag (e) |
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| VN2450N3 | Microchip Technology | MOSFET 500V 13Ohm | Produkt ist nicht verfügbar | |||||||||||||||
| VN2450N3-G | Microchip Technology | Trans MOSFET N-CH Si 500V 0.2A 3-Pin TO-92 Bag | auf Bestellung 127 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| VN2450N3-G | Microchip Technology | Description: MOSFET N-CH 500V 200MA TO92-3 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Tj) Rds On (Max) @ Id, Vgs: 13Ohm @ 400mA, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V | auf Bestellung 509 Stücke: Lieferzeit 21-28 Tag (e) |
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| VN2450N3-G | Microchip Technology | Trans MOSFET N-CH Si 500V 0.2A 3-Pin TO-92 Bag | auf Bestellung 127 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| VN2450N3-G | Microchip Technology | MOSFET 500V 13Ohm | auf Bestellung 376 Stücke: Lieferzeit 14-28 Tag (e) |
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| VN2450N3-G | Microchip Technology | Trans MOSFET N-CH Si 500V 0.2A 3-Pin TO-92 Bag | auf Bestellung 889 Stücke: Lieferzeit 14-21 Tag (e) |
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| VN2450N3-G P002 | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| VN2450N3-G P003 | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| VN2450N3-G P005 | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| VN2450N3-G P013 | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| VN2450N3-G P014 | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| VN2450N8 | SUPERTEX | 04+ | auf Bestellung 704 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| VN2450N8-G | Microchip Technology | Trans MOSFET N-CH Si 500V 0.25A 4-Pin(3+Tab) SOT-89 T/R | Produkt ist nicht verfügbar | |||||||||||||||
| VN2450N8-G | Microchip Technology | MOSFET 500V 13Ohm | auf Bestellung 2153 Stücke: Lieferzeit 14-28 Tag (e) |
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| VN2450N8-G | MICROCHIP TECHNOLOGY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 0.5A; 1.6W; SOT89-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Pulsed drain current: 0.5A Power dissipation: 1.6W Case: SOT89-3 Gate-source voltage: ±20V On-state resistance: 13Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced | auf Bestellung 524 Stücke: Lieferzeit 14-21 Tag (e) |
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| VN2450N8-G | Microchip Technology | Description: MOSFET N-CH 500V 250MA TO243AA Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Tj) Rds On (Max) @ Id, Vgs: 13Ohm @ 400mA, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-243AA (SOT-89) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V | auf Bestellung 27579 Stücke: Lieferzeit 21-28 Tag (e) |
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| VN2450N8-G Produktcode: 132674 | Microchip | Transistoren > MOSFET N-CH Gehäuse: SOT-89 Uds,V: 500 V Idd,A: 0,5 A Rds(on), Ohm: 13 Ohm Ciss, pF/Qg, nC: 150/ JHGF: SMD | Produkt ist nicht verfügbar | |||||||||||||||
| VN2450N8-G | Microchip Technology | Trans MOSFET N-CH Si 500V 0.25A 4-Pin(3+Tab) SOT-89 T/R | Produkt ist nicht verfügbar | |||||||||||||||
| VN2450N8-G | MICROCHIP TECHNOLOGY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 500V; 0.5A; 1.6W; SOT89-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 500V Pulsed drain current: 0.5A Power dissipation: 1.6W Case: SOT89-3 Gate-source voltage: ±20V On-state resistance: 13Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 524 Stücke: Lieferzeit 7-14 Tag (e) |
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| VN2450N8-G | Microchip Technology | Trans MOSFET N-CH Si 500V 0.25A 4-Pin(3+Tab) SOT-89 T/R | Produkt ist nicht verfügbar | |||||||||||||||
| VN2450N8-G | Microchip Technology | Description: MOSFET N-CH 500V 250MA TO243AA Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 250mA (Tj) Rds On (Max) @ Id, Vgs: 13Ohm @ 400mA, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 4V @ 1mA Supplier Device Package: TO-243AA (SOT-89) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 500 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V | auf Bestellung 26000 Stücke: Lieferzeit 21-28 Tag (e) |
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| VN2460 | auf Bestellung 1473 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| VN2460N3 | Microchip Technology | MOSFET 600V 20Ohm | Produkt ist nicht verfügbar | |||||||||||||||
| VN2460N3-G | Microchip Technology | Description: MOSFET N-CH 600V 160MA TO92-3 Packaging: Bag Package / Case: TO-226-3, TO-92-3 (TO-226AA) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160mA (Tj) Rds On (Max) @ Id, Vgs: 20Ohm @ 100mA, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 4V @ 2mA Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V | auf Bestellung 234 Stücke: Lieferzeit 21-28 Tag (e) |
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| VN2460N3-G Produktcode: 104102 | Transistoren > MOSFET N-CH ZCODE: 8541290010 | Produkt ist nicht verfügbar | ||||||||||||||||
| VN2460N3-G | Microchip Technology | Trans MOSFET N-CH Si 600V 0.16A 3-Pin TO-92 Bag | auf Bestellung 323 Stücke: Lieferzeit 14-21 Tag (e) |
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| VN2460N3-G | Microchip Technology | MOSFET 600V 20Ohm | auf Bestellung 113 Stücke: Lieferzeit 14-28 Tag (e) |
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| VN2460N3-G | Microchip Technology | Trans MOSFET N-CH Si 600V 0.16A 3-Pin TO-92 Bag | auf Bestellung 323 Stücke: Lieferzeit 14-21 Tag (e) |
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| VN2460N3-G | Microchip Technology | Trans MOSFET N-CH Si 600V 0.16A 3-Pin TO-92 Bag | Produkt ist nicht verfügbar | |||||||||||||||
| VN2460N3-G | MICROCHIP | Description: MICROCHIP - VN2460N3-G - Leistungs-MOSFET, n-Kanal, 600 V, 160 mA, 20 ohm, TO-92, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage Drain-Source-Spannung Vds: 600V rohsCompliant: YES Dauer-Drainstrom Id: 160mA hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4V euEccn: NLR Verlustleistung: 1W Bauform - Transistor: TO-92 Anzahl der Pins: 3Pin(s) Produktpalette: VN2460 productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 20ohm SVHC: No SVHC (14-Jun-2023) | auf Bestellung 288 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| VN2460N3-G | MICROCHIP TECHNOLOGY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 160mA; Idm: 0.5A; 1W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.16A Pulsed drain current: 0.5A Power dissipation: 1W Case: TO92 Gate-source voltage: ±20V On-state resistance: 20Ω Mounting: THT Kind of package: bulk Kind of channel: enhanced | auf Bestellung 157 Stücke: Lieferzeit 14-21 Tag (e) |
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| VN2460N3-G | Microchip Technology | Trans MOSFET N-CH Si 600V 0.16A 3-Pin TO-92 Bag | Produkt ist nicht verfügbar | |||||||||||||||
| VN2460N3-G | MICROCHIP TECHNOLOGY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 160mA; Idm: 0.5A; 1W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.16A Pulsed drain current: 0.5A Power dissipation: 1W Case: TO92 Gate-source voltage: ±20V On-state resistance: 20Ω Mounting: THT Kind of package: bulk Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | auf Bestellung 157 Stücke: Lieferzeit 7-14 Tag (e) |
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| VN2460N3-G P002 | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| VN2460N3-G P005 | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| VN2460N3-G P013 | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| VN2460N3-G-P003 | MICROCHIP TECHNOLOGY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 160mA; Idm: 0.5A; 1W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.16A Pulsed drain current: 0.5A Power dissipation: 1W Case: TO92 Gate-source voltage: ±20V On-state resistance: 20Ω Mounting: THT Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| VN2460N3-G-P003 | MICROCHIP TECHNOLOGY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 160mA; Idm: 0.5A; 1W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.16A Pulsed drain current: 0.5A Power dissipation: 1W Case: TO92 Gate-source voltage: ±20V On-state resistance: 20Ω Mounting: THT Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| VN2460N3-G-P003 | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | Produkt ist nicht verfügbar | |||||||||||||||
| VN2460N3-G-P003 | Microchip Technology | Description: MOSFET N-CH 600V 160MA TO92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160mA (Tj) Rds On (Max) @ Id, Vgs: 20Ohm @ 100mA, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 4V @ 2mA Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
| VN2460N3-G-P014 | MICROCHIP TECHNOLOGY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 160mA; Idm: 0.5A; 1W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.16A Pulsed drain current: 0.5A Power dissipation: 1W Case: TO92 Gate-source voltage: ±20V On-state resistance: 20Ω Mounting: THT Kind of package: Ammo Pack Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| VN2460N3-G-P014 | Microchip Technology | MOSFET N-CH Enhancmnt Mode MOSFET | auf Bestellung 3478 Stücke: Lieferzeit 14-28 Tag (e) |
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| VN2460N3-G-P014 | Microchip Technology | Description: MOSFET N-CH 600V 160MA TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 160mA (Tj) Rds On (Max) @ Id, Vgs: 20Ohm @ 100mA, 10V Power Dissipation (Max): 1W (Ta) Vgs(th) (Max) @ Id: 4V @ 2mA Supplier Device Package: TO-92-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
| VN2460N3-G-P014 | MICROCHIP TECHNOLOGY | Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 160mA; Idm: 0.5A; 1W; TO92 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.16A Pulsed drain current: 0.5A Power dissipation: 1W Case: TO92 Gate-source voltage: ±20V On-state resistance: 20Ω Mounting: THT Kind of package: Ammo Pack Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| VN2460N3-G-P014 | Microchip Technology | Trans MOSFET N-CH Si 600V 0.16A 3-Pin TO-92 Ammo | Produkt ist nicht verfügbar | |||||||||||||||
| VN2460N8 | SUPER | auf Bestellung 12680 Stücke: Lieferzeit 21-28 Tag (e) | ||||||||||||||||
| VN2460N8 | Microchip Technology | MOSFET 600V 20Ohm | Produkt ist nicht verfügbar | |||||||||||||||
| VN2460N8-G | Microchip Technology | Trans MOSFET N-CH Si 600V 0.2A 4-Pin(3+Tab) SOT-89 T/R | Produkt ist nicht verfügbar | |||||||||||||||
| VN2460N8-G | Microchip Technology | Trans MOSFET N-CH Si 600V 0.2A 4-Pin(3+Tab) SOT-89 T/R | Produkt ist nicht verfügbar | |||||||||||||||
| VN2460N8-g | MICROCHIP TECHNOLOGY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 200mA; Idm: 0.6A; 1.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.2A Pulsed drain current: 0.6A Power dissipation: 1.6W Case: SOT89-3 Gate-source voltage: ±20V On-state resistance: 20Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke | Produkt ist nicht verfügbar | |||||||||||||||
| VN2460N8-G | MICROCHIP | Description: MICROCHIP - VN2460N8-G - Leistungs-MOSFET, Anreicherungstyp, n-Kanal, 600 V, 200 mA, 20 ohm, SOT-89, Oberflächenmontage Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 600 Dauer-Drainstrom Id: 200 Rds(on)-Messspannung Vgs: 10 MSL: MSL 1 - unbegrenzt Verlustleistung Pd: 1.6 Bauform - Transistor: SOT-89 Anzahl der Pins: 3 Produktpalette: - Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 20 Betriebstemperatur, max.: 150 Schwellenspannung Vgs: 4 SVHC: No SVHC (17-Jan-2022) | auf Bestellung 11 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| VN2460N8-g | Microchip Technology | MOSFET 600V 20Ohm | auf Bestellung 5958 Stücke: Lieferzeit 209-223 Tag (e) |
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| VN2460N8-g | Microchip Technology | Description: MOSFET N-CH 600V 200MA TO243AA Packaging: Cut Tape (CT) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Tj) Rds On (Max) @ Id, Vgs: 20Ohm @ 100mA, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 4V @ 2mA Supplier Device Package: TO-243AA (SOT-89) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
| VN2460N8-g | MICROCHIP TECHNOLOGY | Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 200mA; Idm: 0.6A; 1.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 0.2A Pulsed drain current: 0.6A Power dissipation: 1.6W Case: SOT89-3 Gate-source voltage: ±20V On-state resistance: 20Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced | Produkt ist nicht verfügbar | |||||||||||||||
| VN2460N8-G | Microchip Technology | Trans MOSFET N-CH Si 600V 0.2A 4-Pin(3+Tab) SOT-89 T/R | Produkt ist nicht verfügbar | |||||||||||||||
| VN2460N8-G | Microchip Technology | Trans MOSFET N-CH Si 600V 0.2A 4-Pin(3+Tab) SOT-89 T/R | Produkt ist nicht verfügbar | |||||||||||||||
| VN2460N8-g | Microchip Technology | Description: MOSFET N-CH 600V 200MA TO243AA Packaging: Tape & Reel (TR) Package / Case: TO-243AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 200mA (Tj) Rds On (Max) @ Id, Vgs: 20Ohm @ 100mA, 10V Power Dissipation (Max): 1.6W (Ta) Vgs(th) (Max) @ Id: 4V @ 2mA Supplier Device Package: TO-243AA (SOT-89) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Input Capacitance (Ciss) (Max) @ Vds: 150 pF @ 25 V | Produkt ist nicht verfügbar | |||||||||||||||
| VN2460N8-G | MICROCHIP | Description: MICROCHIP - VN2460N8-G - Leistungs-MOSFET, Anreicherungstyp, n-Kanal, 600 V, 200 mA, 20 ohm, SOT-89, Oberflächenmontage Verlustleistung: 1.6 Kanaltyp: n-Kanal Drain-Source-Durchgangswiderstand: 20 Qualifikation: - SVHC: No SVHC (10-Jun-2022) | auf Bestellung 11 Stücke: Lieferzeit 14-21 Tag (e) | |||||||||||||||
| VN24A1500000G | Amphenol Anytek | Pluggable Terminal Blocks TB RIS CLA 180D SOL | Produkt ist nicht verfügbar | |||||||||||||||
| VN26-00635NDFDMF-A | Verotronic Technologies Pte Ltd. | Description: CBL ASSY 3.5MM JACK TO JACK 25" Packaging: Bulk Color: Black Length: 25.00" (635.00mm) Style: 3.5mm to 3.5mm Operating Temperature: -40°C ~ 85°C Cable Type: 14.80mm OD Coaxial Cable 1st Connector: 3.5mm Jack 2nd Connector: 3.5mm Jack Part Status: Active Frequency - Max: 26.5 GHz 1st Connector Mounting Type: Free Hanging (In-Line) 2nd Connector Mounting Type: Free Hanging (In-Line) 1st Contact Gender: Female 2nd Contact Gender: Female Overall Impedance: 50 Ohms | Produkt ist nicht verfügbar | |||||||||||||||
| VN26-00635NDMNDF-A | Verotronic Technologies Pte Ltd. | Description: CBL ASSY 3.5MM JACK TO PLUG 25" Packaging: Bulk Color: Black Length: 25.00" (635.00mm) Style: 3.5mm to 3.5mm Operating Temperature: -40°C ~ 85°C Cable Type: 14.80mm OD Coaxial Cable 1st Connector: 3.5mm Jack 2nd Connector: 3.5mm Plug Part Status: Active Frequency - Max: 26.5 GHz 1st Connector Mounting Type: Free Hanging (In-Line) 2nd Connector Mounting Type: Free Hanging (In-Line) 1st Contact Gender: Female 2nd Contact Gender: Male Overall Impedance: 50 Ohms | Produkt ist nicht verfügbar | |||||||||||||||
| VN2780LG | auf Bestellung 7500 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| VN280FM | auf Bestellung 2000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||||
| VN280FMЈЁ8922Ј© | ST | SOT-82FM | auf Bestellung 22000 Stücke: Lieferzeit 21-28 Tag (e) | |||||||||||||||
| VN2860 | ST | 09+ | auf Bestellung 1540 Stücke: Lieferzeit 21-28 Tag (e) |