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PMEG6030ETPX PMEG6030ETPX NEXPERIA PMEG6030ETP.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP5,SOD128; SMD; 60V; 4.2A; 12ns
Type of diode: Schottky rectifying
Case: CFP5; SOD128
Mounting: SMD
Max. off-state voltage: 60V
Load current: 4.2A
Semiconductor structure: single diode
Capacitance: 0.12nF
Max. forward voltage: 0.45V
Leakage current: 150mA
Max. forward impulse current: 50A
Reverse recovery time: 12ns
Kind of package: reel; tape
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PMEG3050BEP,115 PMEG3050BEP,115 NEXPERIA PMEG3050BEP.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP5,SOD128; SMD; 30V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: CFP5; SOD128
Mounting: SMD
Max. off-state voltage: 30V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. forward impulse current: 70A
Kind of package: reel; tape
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PMEG10030ELP-QX PMEG10030ELP-QX NEXPERIA Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP5,SOD128; SMD; 100V; 3A; 8ns
Type of diode: Schottky rectifying
Case: CFP5; SOD128
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 3A
Semiconductor structure: single diode
Capacitance: 0.2nF
Max. forward voltage: 0.77V
Leakage current: 1.5mA
Max. forward impulse current: 70A
Reverse recovery time: 8ns
Kind of package: reel; tape
Application: automotive industry
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PMEG6010ETR,115 PMEG6010ETR,115 NEXPERIA PMEG6010ETR.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP3,SOD123W; SMD; 60V; 1.4A
Type of diode: Schottky rectifying
Case: CFP3; SOD123W
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1.4A
Semiconductor structure: single diode
Max. forward voltage: 0.46V
Max. forward impulse current: 50A
Kind of package: reel; tape
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PMEG3010BER,115 PMEG3010BER,115 NEXPERIA PMEG3010BER.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP3,SOD123W; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: CFP3; SOD123W
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 170pF
Max. forward voltage: 0.45V
Leakage current: 50µA
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 1.8W
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PMEG045T030EPDZ PMEG045T030EPDZ NEXPERIA PMEG045T030EPD.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP15,SOT1289; SMD; 45V; 4.2A; 16ns
Type of diode: Schottky rectifying
Case: CFP15; SOT1289
Mounting: SMD
Max. off-state voltage: 45V
Load current: 4.2A
Semiconductor structure: single diode
Capacitance: 350pF
Max. forward voltage: 0.325V
Leakage current: 9mA
Max. forward impulse current: 45A
Reverse recovery time: 16ns
Kind of package: reel; tape
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168+0.51 EUR
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PMEG40T30ERX PMEG40T30ERX NEXPERIA PMEG40T30ER.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP3,SOD123W; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: CFP3; SOD123W
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
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PMEG4010BEA,115 PMEG4010BEA,115 NEXPERIA PMEGXX10BEX-DTE.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.64V
Max. forward impulse current: 3.5A
Kind of package: reel; tape
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BAS21-QVL BAS21-QVL NEXPERIA Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 200mA; 50ns; SOT23; Ufmax: 1.25V; 0.25W
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Leakage current: 0.1mA
Power dissipation: 0.25W
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: fast switching
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PMEG4010BEA-QF PMEG4010BEA-QF NEXPERIA PMEG4010BEA-Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 50pF
Max. forward voltage: 0.64V
Leakage current: 0.1mA
Max. forward impulse current: 10A
Kind of package: reel; tape
Application: automotive industry
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PMEG4010BEA-QX PMEG4010BEA-QX NEXPERIA PMEG4010BEA-Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 50pF
Max. forward voltage: 0.64V
Leakage current: 0.1mA
Max. forward impulse current: 10A
Kind of package: reel; tape
Application: automotive industry
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BC847BW-QX BC847BW-QX NEXPERIA BC847XW-Q_SER.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Pulsed collector current: 0.2A
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BC847BW,135 BC847BW,135 NEXPERIA BC847XW_SER.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 0.2A
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BC847CW-QF BC847CW-QF NEXPERIA BC847XW-Q_SER.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Pulsed collector current: 0.2A
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BC847CW-QX BC847CW-QX NEXPERIA BC847XW-Q_SER.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Pulsed collector current: 0.2A
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BC846BW-QF BC846BW-QF NEXPERIA BC846XW-Q_SER.pdf Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Pulsed collector current: 0.2A
Produkt ist nicht verfügbar
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PBSS5160V,115 NEXPERIA PBSS5160V.pdf Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; SOT666
Polarisation: bipolar
Current gain: 100...350
Frequency: 220MHz
Kind of package: reel; tape
Case: SOT666
Type of transistor: PNP
Mounting: SMD
Collector current: 1A
Collector-emitter voltage: 60V
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PMEG2010AEH,115 PMEG2010AEH,115 NEXPERIA PMEG2010AEH_PMEG2010AET.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 20V; 1A; reel,tape
Kind of package: reel; tape
Mounting: SMD
Case: SOD123F
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Load current: 1A
Max. forward impulse current: 9A
Max. off-state voltage: 20V
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PMEG2010AEH-QX PMEG2010AEH-QX NEXPERIA PMEG2010AEH-Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 20V; 1A; reel,tape
Application: automotive industry
Kind of package: reel; tape
Mounting: SMD
Case: SOD123F
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Load current: 1A
Max. forward impulse current: 9A
Max. off-state voltage: 20V
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PMEG2010BER,115 NEXPERIA PMEG2010BER.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP3,SOD123W; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: CFP3; SOD123W
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Kind of package: reel; tape
Capacitance: 185pF
Leakage current: 50µA
Power dissipation: 1.8W
Max. forward impulse current: 50A
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PMEG2010BELD-QYL NEXPERIA PMEG2010BELD-Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN1006D-2,SOD882D; SMD; 20V; 1A
Type of diode: Schottky rectifying
Case: DFN1006D-2; SOD882D
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.49V
Kind of package: reel; tape
Reverse recovery time: 1.6ns
Capacitance: 40pF
Leakage current: 50µA
Max. forward impulse current: 6A
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PMEG2010AEJ,115 PMEG2010AEJ,115 NEXPERIA PMEG2010AEJ.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC90,SOD323F; SMD; 20V; 1A; reel,tape
Kind of package: reel; tape
Mounting: SMD
Case: SC90; SOD323F
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 50pF
Max. forward voltage: 0.55V
Load current: 1A
Max. off-state voltage: 20V
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PMEG2010BELD,315 NEXPERIA PMEG2010BELD.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN1006D-2,SOD882D; SMD; 20V; 1A
Type of diode: Schottky rectifying
Case: DFN1006D-2; SOD882D
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.49V
Kind of package: reel; tape
Capacitance: 40pF
Max. forward impulse current: 6A
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PMEG2010BER-QX NEXPERIA Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP3,SOD123W; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: CFP3; SOD123W
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Kind of package: reel; tape
Capacitance: 185pF
Application: automotive industry
Leakage current: 50µA
Power dissipation: 1.8W
Max. forward impulse current: 50A
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PMEG2010BEV,115 NEXPERIA PMEG2010BEV.pdf Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT666; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOT666
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Capacitance: 80pF
Max. forward impulse current: 10A
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PMDXB600UNELZ NEXPERIA PMDXB600UNEL.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.4A
Pulsed drain current: 2.5A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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PMDXB600UNEZ NEXPERIA PMDXB600UNE.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.4A
Pulsed drain current: 2.5A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
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BZV85-C5V1,133 BZV85-C5V1,133 NEXPERIA BZV85-C10.113.pdf Category: THT Zener diodes
Description: Diode: Zener; 1/1.3W; 5.1V; DO41; single diode; 500mA; Ufmax: 1V
Type of diode: Zener
Power dissipation: 1/1.3W
Zener voltage: 5.1V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Max. load current: 0.5A
Max. forward voltage: 1V
Kind of package: Ammo Pack
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1280+0.067 EUR
1415+0.061 EUR
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BAS20-QR BAS20-QR NEXPERIA BAS20-Q.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 200mA; 50ns; SOT23; Ufmax: 1.25V; 0.25W
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Leakage current: 0.1mA
Power dissipation: 0.25W
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: fast switching
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1625+0.052 EUR
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BAS20-QVL BAS20-QVL NEXPERIA BAS20-Q.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 200mA; 50ns; SOT23; Ufmax: 1.25V; 0.25W
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Leakage current: 0.1mA
Power dissipation: 0.25W
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: fast switching
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BAW56W-QF BAW56W-QF NEXPERIA BAW56W-Q.pdf Category: SMD universal diodes
Description: Diode: switching; SMD; 90V; 150mA; 4ns; SOT323; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 90V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 0.15mA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: fast switching
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BAS70W,115 BAS70W,115 NEXPERIA BAS70_SER.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
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BAS70W-QX BAS70W-QX NEXPERIA Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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BAT54J-QX BAT54J-QX NEXPERIA BAT54J-Q.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC90,SOD323F; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SC90; SOD323F
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 10pF
Max. forward voltage: 0.8V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.55W
Application: automotive industry
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NZH22C,115 NZH22C,115 NEXPERIA NZH_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 22V; SMD; SOD123F; reel,tape; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±2.5%
Max. forward voltage: 0.9V
Case: SOD123F
Kind of package: reel; tape
Max. load current: 0.25A
Semiconductor structure: single diode
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BUK6D120-60PX BUK6D120-60PX NEXPERIA BUK6D120-60P.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -5.1A; Idm: -32A; 15W
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.1A
Pulsed drain current: -32A
Power dissipation: 15W
Case: DFN2020MD-6; SOT1220
On-state resistance: 256mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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74HCT597D,653 74HCT597D,653 NEXPERIA 74HCT597D,653.pdf Category: Shift registers
Description: IC: digital; 8bit,shift register,parallel in,serial output
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; parallel in; serial output; shift register
Technology: CMOS; TTL
Mounting: SMD
Case: SO16
Family: HCT
Kind of package: reel; tape
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74HCT597PWJ NEXPERIA 74HCT597PWJ.pdf Category: Shift registers
Description: IC: digital; 8bit,D flip-flop,shift register; Ch: 1; TTL; SMD; HCT
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; D flip-flop; shift register
Technology: TTL
Mounting: SMD
Case: TSSOP16
Family: HCT
Operating temperature: -40...125°C
Number of inputs: 13
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Number of channels: 1
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74LVC1G58GW,125 74LVC1G58GW,125 NEXPERIA 74LVC1G58.pdf Category: Gates, inverters
Description: IC: digital; configurable,multiple-function; IN: 3; CMOS,TTL; SMD
Type of integrated circuit: digital
Kind of gate: configurable; multiple-function
Number of inputs: 3
Technology: CMOS; TTL
Mounting: SMD
Case: SC88
Manufacturer series: Mini Logic
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVC
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624+0.13 EUR
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74LVC1G58GM,115 NEXPERIA 74LVC1G58.pdf Category: Gates, inverters
Description: IC: digital; buffer,inverter,Schmitt trigger; Ch: 1; IN: 3; SMD
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XNOR
Number of inputs: 3
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Manufacturer series: Mini Logic
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVC
Number of channels: 1
Kind of integrated circuit: buffer; inverter; Schmitt trigger
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74LVC1G58GS,132 NEXPERIA 74LVC1G58.pdf Category: Gates, inverters
Description: IC: digital; buffer,inverter,Schmitt trigger; Ch: 1; IN: 3; SMD
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XNOR
Number of inputs: 3
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Manufacturer series: Mini Logic
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVC
Number of channels: 1
Kind of integrated circuit: buffer; inverter; Schmitt trigger
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BAS70XY,115 BAS70XY,115 NEXPERIA BAS70XY.pdf Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC88,SOT363,TSSOP6; SMD; 70V; 70mA
Type of diode: Schottky switching
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series x2
Max. forward voltage: 1V
Kind of package: reel; tape
Capacitance: 2pF
Max. forward impulse current: 0.1A
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432+0.2 EUR
500+0.17 EUR
544+0.15 EUR
589+0.14 EUR
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NX3008PBKS,115 NX3008PBKS,115 NEXPERIA NX3008PBKS.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.2A; 80mW
Mounting: SMD
Power dissipation: 80mW
Gate charge: 0.72nC
Polarisation: unipolar
Drain current: -0.2A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: SC88; SOT363; TSSOP6
On-state resistance: 4.1Ω
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285+0.3 EUR
343+0.25 EUR
385+0.23 EUR
511+0.17 EUR
569+0.15 EUR
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NX3008NBK,215 NX3008NBK,215 NEXPERIA NX3008NBK.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.4A; 350mW; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.4A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Gate-source voltage: ±8V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 0.68nC
Kind of package: reel; tape
Kind of channel: enhancement
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NX3008NBKS,115 NX3008NBKS,115 NEXPERIA NX3008NBKS.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.35A; 280mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.35A
Power dissipation: 0.28W
Case: SC88; SOT363; TSSOP6
Gate-source voltage: ±8V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 0.68nC
Kind of package: reel; tape
Kind of channel: enhancement
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582+0.14 EUR
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770+0.11 EUR
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NX138AKVL NX138AKVL NEXPERIA NX138AK.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 0.12A; Idm: 0.765A
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SOT23; TO236AB
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.12A
Gate charge: 0.9nC
Power dissipation: 0.265W
On-state resistance: 10Ω
Pulsed drain current: 0.765A
Gate-source voltage: ±20V
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BAS70XY-QX NEXPERIA Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC88,SOT363,TSSOP6; SMD; 70V; 70mA
Type of diode: Schottky switching
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series x2
Max. forward voltage: 1V
Kind of package: reel; tape
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PSMN040-100MSEX NEXPERIA PSMN040-100MSE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 121A; 91W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Pulsed drain current: 121A
Power dissipation: 91W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 29.4mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
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BZX79-C6V2,133 BZX79-C6V2,133 NEXPERIA BZX79.pdf Category: THT Zener diodes
Description: Diode: Zener; 0.4/0.5W; 6.2V; Ammo Pack; DO35; single diode; 250mA
Type of diode: Zener
Power dissipation: 0.4/0.5W
Zener voltage: 6.2V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Max. load current: 0.25A
Max. forward voltage: 0.9V
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BZX79-C6V2,143 NEXPERIA BZX79.pdf Category: THT Zener diodes
Description: Diode: Zener; 0.4/0.5W; 6.2V; Ammo Pack; DO35; single diode; 250mA
Type of diode: Zener
Power dissipation: 0.4/0.5W
Zener voltage: 6.2V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Max. load current: 0.25A
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PMV90ENER PMV90ENER NEXPERIA PMV90ENE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.9A; Idm: 12A; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.9A
Pulsed drain current: 12A
Case: SOT23; TO236AB
On-state resistance: 0.118Ω
Mounting: SMD
Gate charge: 5.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Version: ESD
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74AHC32D,118 74AHC32D,118 NEXPERIA 74AHC32D.112.pdf Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; reel,tape; AHC
Type of integrated circuit: digital
Technology: CMOS
Case: SO14
Mounting: SMD
Kind of gate: OR
Number of channels: quad; 4
Kind of package: reel; tape
Number of inputs: 2
Family: AHC
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74AHC32BQ,115 NEXPERIA 74AHC32BQ,115.pdf Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; DHVQFN14; 2÷5.5VDC; -40÷125°C
Type of integrated circuit: digital
Technology: CMOS
Case: DHVQFN14
Mounting: SMD
Kind of gate: OR
Number of channels: quad; 4
Kind of package: reel; tape
Operating temperature: -40...125°C
Delay time: 14.5ns
Quiescent current: 40µA
Number of inputs: 2
Supply voltage: 2...5.5V DC
Family: AHC
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74AHC32PW,118 74AHC32PW,118 NEXPERIA 74AHC32PW,118.pdf Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; -40÷125°C
Type of integrated circuit: digital
Technology: CMOS
Case: TSSOP14
Mounting: SMD
Kind of gate: OR
Number of channels: quad; 4
Kind of package: reel; tape
Operating temperature: -40...125°C
Delay time: 14.5ns
Quiescent current: 40µA
Number of inputs: 2
Supply voltage: 2...5.5V DC
Family: AHC
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74VHC32D,118 NEXPERIA 74VHC32D,118.pdf Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷5.5VDC; -40÷125°C
Type of integrated circuit: digital
Technology: CMOS
Case: SO14
Mounting: SMD
Kind of gate: OR
Number of channels: 4
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of inputs: 2
Supply voltage: 2...5.5V DC
Family: VHC
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74VHC32PW,118 NEXPERIA 74VHC_VHCT32.pdf Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; -40÷125°C
Type of integrated circuit: digital
Technology: CMOS
Case: TSSOP14
Mounting: SMD
Kind of gate: OR
Number of channels: 4
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of inputs: 2
Supply voltage: 2...5.5V DC
Family: VHC
Produkt ist nicht verfügbar
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HEF4021BTTJ NEXPERIA HEF4021B.pdf Category: Shift registers
Description: IC: digital; 8bit,static shift register; CMOS; SMD; TSSOP16
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; static shift register
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Family: HEF4000B
Operating temperature: -40...85°C
Supply voltage: 3...15V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
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HEF4521BT,653 HEF4521BT,653 NEXPERIA HEF4521BP.652.pdf Category: Counters/dividers
Description: IC: digital; 24-stage,frequency divider,oscillator; CMOS; SMD
Type of integrated circuit: digital
Family: HEF4000B
Mounting: SMD
Case: SO16
Kind of integrated circuit: 24-stage; frequency divider; oscillator
Kind of package: reel; tape
Technology: CMOS
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107+0.8 EUR
110+0.77 EUR
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74LVC1G97GW,125 74LVC1G97GW,125 NEXPERIA 74LVC1G97x-DTE.pdf Category: Gates, inverters
Description: IC: digital; configurable,multiple-function; IN: 3; CMOS,TTL; SMD
Type of integrated circuit: digital
Kind of gate: configurable; multiple-function
Number of inputs: 3
Technology: CMOS; TTL
Mounting: SMD
Case: SC88
Supply voltage: 1.65...5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVC
Manufacturer series: Mini Logic
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74LVC1G97GM,132 NEXPERIA 74LVC1G97.pdf Category: Gates, inverters
Description: IC: digital; buffer,inverter,multiplexer,Schmitt trigger; Ch: 1
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of inputs: 3
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVC
Number of channels: 1
Manufacturer series: Mini Logic
Kind of integrated circuit: buffer; inverter; multiplexer; Schmitt trigger
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PMEG6030ETPX PMEG6030ETP.pdf
PMEG6030ETPX
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP5,SOD128; SMD; 60V; 4.2A; 12ns
Type of diode: Schottky rectifying
Case: CFP5; SOD128
Mounting: SMD
Max. off-state voltage: 60V
Load current: 4.2A
Semiconductor structure: single diode
Capacitance: 0.12nF
Max. forward voltage: 0.45V
Leakage current: 150mA
Max. forward impulse current: 50A
Reverse recovery time: 12ns
Kind of package: reel; tape
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PMEG3050BEP,115 PMEG3050BEP.pdf
PMEG3050BEP,115
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP5,SOD128; SMD; 30V; 5A; reel,tape
Type of diode: Schottky rectifying
Case: CFP5; SOD128
Mounting: SMD
Max. off-state voltage: 30V
Load current: 5A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Max. forward impulse current: 70A
Kind of package: reel; tape
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PMEG10030ELP-QX
PMEG10030ELP-QX
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP5,SOD128; SMD; 100V; 3A; 8ns
Type of diode: Schottky rectifying
Case: CFP5; SOD128
Mounting: SMD
Max. off-state voltage: 0.1kV
Load current: 3A
Semiconductor structure: single diode
Capacitance: 0.2nF
Max. forward voltage: 0.77V
Leakage current: 1.5mA
Max. forward impulse current: 70A
Reverse recovery time: 8ns
Kind of package: reel; tape
Application: automotive industry
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PMEG6010ETR,115 PMEG6010ETR.pdf
PMEG6010ETR,115
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP3,SOD123W; SMD; 60V; 1.4A
Type of diode: Schottky rectifying
Case: CFP3; SOD123W
Mounting: SMD
Max. off-state voltage: 60V
Load current: 1.4A
Semiconductor structure: single diode
Max. forward voltage: 0.46V
Max. forward impulse current: 50A
Kind of package: reel; tape
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PMEG3010BER,115 PMEG3010BER.pdf
PMEG3010BER,115
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP3,SOD123W; SMD; 30V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: CFP3; SOD123W
Mounting: SMD
Max. off-state voltage: 30V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 170pF
Max. forward voltage: 0.45V
Leakage current: 50µA
Max. forward impulse current: 50A
Kind of package: reel; tape
Power dissipation: 1.8W
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28+3.05 EUR
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PMEG045T030EPDZ PMEG045T030EPD.pdf
PMEG045T030EPDZ
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP15,SOT1289; SMD; 45V; 4.2A; 16ns
Type of diode: Schottky rectifying
Case: CFP15; SOT1289
Mounting: SMD
Max. off-state voltage: 45V
Load current: 4.2A
Semiconductor structure: single diode
Capacitance: 350pF
Max. forward voltage: 0.325V
Leakage current: 9mA
Max. forward impulse current: 45A
Reverse recovery time: 16ns
Kind of package: reel; tape
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168+0.51 EUR
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PMEG40T30ERX PMEG40T30ER.pdf
PMEG40T30ERX
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP3,SOD123W; SMD; 40V; 3A; reel,tape
Type of diode: Schottky rectifying
Case: CFP3; SOD123W
Mounting: SMD
Max. off-state voltage: 40V
Load current: 3A
Semiconductor structure: single diode
Kind of package: reel; tape
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78+1.09 EUR
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PMEG4010BEA,115 PMEGXX10BEX-DTE.pdf
PMEG4010BEA,115
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.64V
Max. forward impulse current: 3.5A
Kind of package: reel; tape
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BAS21-QVL
BAS21-QVL
Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 250V; 200mA; 50ns; SOT23; Ufmax: 1.25V; 0.25W
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 250V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Leakage current: 0.1mA
Power dissipation: 0.25W
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: fast switching
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PMEG4010BEA-QF PMEG4010BEA-Q.pdf
PMEG4010BEA-QF
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 50pF
Max. forward voltage: 0.64V
Leakage current: 0.1mA
Max. forward impulse current: 10A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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PMEG4010BEA-QX PMEG4010BEA-Q.pdf
PMEG4010BEA-QX
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD323; SMD; 40V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOD323
Mounting: SMD
Max. off-state voltage: 40V
Load current: 1A
Semiconductor structure: single diode
Capacitance: 50pF
Max. forward voltage: 0.64V
Leakage current: 0.1mA
Max. forward impulse current: 10A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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BC847BW-QX BC847XW-Q_SER.pdf
BC847BW-QX
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Pulsed collector current: 0.2A
Produkt ist nicht verfügbar
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BC847BW,135 BC847XW_SER.pdf
BC847BW,135
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Pulsed collector current: 0.2A
Produkt ist nicht verfügbar
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BC847CW-QF BC847XW-Q_SER.pdf
BC847CW-QF
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Pulsed collector current: 0.2A
Produkt ist nicht verfügbar
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BC847CW-QX BC847XW-Q_SER.pdf
BC847CW-QX
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 45V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 45V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 420...800
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Pulsed collector current: 0.2A
Produkt ist nicht verfügbar
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BC846BW-QF BC846XW-Q_SER.pdf
BC846BW-QF
Hersteller: NEXPERIA
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 65V; 0.1A; 200mW; SC70,SOT323
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 65V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC70; SOT323
Current gain: 200...450
Mounting: SMD
Kind of package: reel; tape
Frequency: 100MHz
Application: automotive industry
Pulsed collector current: 0.2A
Produkt ist nicht verfügbar
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PBSS5160V,115 PBSS5160V.pdf
Hersteller: NEXPERIA
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 60V; 1A; SOT666
Polarisation: bipolar
Current gain: 100...350
Frequency: 220MHz
Kind of package: reel; tape
Case: SOT666
Type of transistor: PNP
Mounting: SMD
Collector current: 1A
Collector-emitter voltage: 60V
Produkt ist nicht verfügbar
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PMEG2010AEH,115 PMEG2010AEH_PMEG2010AET.pdf
PMEG2010AEH,115
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 20V; 1A; reel,tape
Kind of package: reel; tape
Mounting: SMD
Case: SOD123F
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Load current: 1A
Max. forward impulse current: 9A
Max. off-state voltage: 20V
Produkt ist nicht verfügbar
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PMEG2010AEH-QX PMEG2010AEH-Q.pdf
PMEG2010AEH-QX
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD123F; SMD; 20V; 1A; reel,tape
Application: automotive industry
Kind of package: reel; tape
Mounting: SMD
Case: SOD123F
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Max. forward voltage: 0.43V
Load current: 1A
Max. forward impulse current: 9A
Max. off-state voltage: 20V
Produkt ist nicht verfügbar
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PMEG2010BER,115 PMEG2010BER.pdf
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP3,SOD123W; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: CFP3; SOD123W
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Kind of package: reel; tape
Capacitance: 185pF
Leakage current: 50µA
Power dissipation: 1.8W
Max. forward impulse current: 50A
Produkt ist nicht verfügbar
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PMEG2010BELD-QYL PMEG2010BELD-Q.pdf
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN1006D-2,SOD882D; SMD; 20V; 1A
Type of diode: Schottky rectifying
Case: DFN1006D-2; SOD882D
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.49V
Kind of package: reel; tape
Reverse recovery time: 1.6ns
Capacitance: 40pF
Leakage current: 50µA
Max. forward impulse current: 6A
Produkt ist nicht verfügbar
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PMEG2010AEJ,115 PMEG2010AEJ.pdf
PMEG2010AEJ,115
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SC90,SOD323F; SMD; 20V; 1A; reel,tape
Kind of package: reel; tape
Mounting: SMD
Case: SC90; SOD323F
Type of diode: Schottky rectifying
Semiconductor structure: single diode
Capacitance: 50pF
Max. forward voltage: 0.55V
Load current: 1A
Max. off-state voltage: 20V
Produkt ist nicht verfügbar
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PMEG2010BELD,315 PMEG2010BELD.pdf
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DFN1006D-2,SOD882D; SMD; 20V; 1A
Type of diode: Schottky rectifying
Case: DFN1006D-2; SOD882D
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.49V
Kind of package: reel; tape
Capacitance: 40pF
Max. forward impulse current: 6A
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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PMEG2010BER-QX
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; CFP3,SOD123W; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: CFP3; SOD123W
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.45V
Kind of package: reel; tape
Capacitance: 185pF
Application: automotive industry
Leakage current: 50µA
Power dissipation: 1.8W
Max. forward impulse current: 50A
Produkt ist nicht verfügbar
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PMEG2010BEV,115 PMEG2010BEV.pdf
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOT666; SMD; 20V; 1A; reel,tape
Type of diode: Schottky rectifying
Case: SOT666
Mounting: SMD
Max. off-state voltage: 20V
Load current: 1A
Semiconductor structure: single diode
Max. forward voltage: 0.5V
Kind of package: reel; tape
Capacitance: 80pF
Max. forward impulse current: 10A
Produkt ist nicht verfügbar
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PMDXB600UNELZ PMDXB600UNEL.pdf
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.4A
Pulsed drain current: 2.5A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
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PMDXB600UNEZ PMDXB600UNE.pdf
Hersteller: NEXPERIA
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; Trench; unipolar; 20V; 400mA; Idm: 2.5A
Type of transistor: N-MOSFET x2
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.4A
Pulsed drain current: 2.5A
Case: DFN1010B-6; SOT1216
Gate-source voltage: ±8V
On-state resistance: 1Ω
Mounting: SMD
Gate charge: 0.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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BZV85-C5V1,133 BZV85-C10.113.pdf
BZV85-C5V1,133
Hersteller: NEXPERIA
Category: THT Zener diodes
Description: Diode: Zener; 1/1.3W; 5.1V; DO41; single diode; 500mA; Ufmax: 1V
Type of diode: Zener
Power dissipation: 1/1.3W
Zener voltage: 5.1V
Case: DO41
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Max. load current: 0.5A
Max. forward voltage: 1V
Kind of package: Ammo Pack
auf Bestellung 11150 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
725+0.12 EUR
1280+0.067 EUR
1415+0.061 EUR
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BAS20-QR BAS20-Q.pdf
BAS20-QR
Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 200mA; 50ns; SOT23; Ufmax: 1.25V; 0.25W
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Leakage current: 0.1mA
Power dissipation: 0.25W
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: fast switching
auf Bestellung 1625 Stücke:
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AnzahlPrivatkunde
1625+0.052 EUR
Mindestbestellmenge: 1625 Stücke
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BAS20-QVL BAS20-Q.pdf
BAS20-QVL
Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 200V; 200mA; 50ns; SOT23; Ufmax: 1.25V; 0.25W
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 200V
Load current: 0.2A
Reverse recovery time: 50ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 9A
Leakage current: 0.1mA
Power dissipation: 0.25W
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: fast switching
Produkt ist nicht verfügbar
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BAW56W-QF BAW56W-Q.pdf
BAW56W-QF
Hersteller: NEXPERIA
Category: SMD universal diodes
Description: Diode: switching; SMD; 90V; 150mA; 4ns; SOT323; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 90V
Load current: 0.15A
Reverse recovery time: 4ns
Semiconductor structure: common anode; double
Case: SOT323
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Leakage current: 0.15mA
Power dissipation: 0.2W
Kind of package: reel; tape
Application: automotive industry
Features of semiconductor devices: fast switching
Produkt ist nicht verfügbar
Mindestbestellmenge: 25 Stücke
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BAS70W,115 BAS70_SER.pdf
BAS70W,115
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Produkt ist nicht verfügbar
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BAS70W-QX
BAS70W-QX
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SOT323; SMD; 70V; 70mA; reel,tape
Type of diode: Schottky switching
Case: SOT323
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: single diode
Max. forward voltage: 1V
Max. forward impulse current: 0.1A
Kind of package: reel; tape
Application: automotive industry
Produkt ist nicht verfügbar
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BAT54J-QX BAT54J-Q.pdf
BAT54J-QX
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC90,SOD323F; SMD; 30V; 0.2A; reel,tape
Type of diode: Schottky switching
Case: SC90; SOD323F
Mounting: SMD
Max. off-state voltage: 30V
Load current: 0.2A
Semiconductor structure: single diode
Capacitance: 10pF
Max. forward voltage: 0.8V
Leakage current: 2µA
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Power dissipation: 0.55W
Application: automotive industry
Produkt ist nicht verfügbar
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NZH22C,115 NZH_SER.pdf
NZH22C,115
Hersteller: NEXPERIA
Category: SMD Zener diodes
Description: Diode: Zener; 0.5W; 22V; SMD; SOD123F; reel,tape; Ifmax: 250mA
Type of diode: Zener
Power dissipation: 0.5W
Zener voltage: 22V
Mounting: SMD
Tolerance: ±2.5%
Max. forward voltage: 0.9V
Case: SOD123F
Kind of package: reel; tape
Max. load current: 0.25A
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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BUK6D120-60PX BUK6D120-60P.pdf
BUK6D120-60PX
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; Trench; unipolar; -60V; -5.1A; Idm: -32A; 15W
Type of transistor: P-MOSFET
Technology: Trench
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5.1A
Pulsed drain current: -32A
Power dissipation: 15W
Case: DFN2020MD-6; SOT1220
On-state resistance: 256mΩ
Mounting: SMD
Gate charge: 18nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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74HCT597D,653 74HCT597D,653.pdf
74HCT597D,653
Hersteller: NEXPERIA
Category: Shift registers
Description: IC: digital; 8bit,shift register,parallel in,serial output
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; parallel in; serial output; shift register
Technology: CMOS; TTL
Mounting: SMD
Case: SO16
Family: HCT
Kind of package: reel; tape
Produkt ist nicht verfügbar
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74HCT597PWJ 74HCT597PWJ.pdf
Hersteller: NEXPERIA
Category: Shift registers
Description: IC: digital; 8bit,D flip-flop,shift register; Ch: 1; TTL; SMD; HCT
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; D flip-flop; shift register
Technology: TTL
Mounting: SMD
Case: TSSOP16
Family: HCT
Operating temperature: -40...125°C
Number of inputs: 13
Supply voltage: 4.5...5.5V DC
Kind of package: reel; tape
Number of channels: 1
Produkt ist nicht verfügbar
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74LVC1G58GW,125 74LVC1G58.pdf
74LVC1G58GW,125
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; configurable,multiple-function; IN: 3; CMOS,TTL; SMD
Type of integrated circuit: digital
Kind of gate: configurable; multiple-function
Number of inputs: 3
Technology: CMOS; TTL
Mounting: SMD
Case: SC88
Manufacturer series: Mini Logic
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVC
auf Bestellung 624 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
500+0.17 EUR
624+0.13 EUR
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74LVC1G58GM,115 74LVC1G58.pdf
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; buffer,inverter,Schmitt trigger; Ch: 1; IN: 3; SMD
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XNOR
Number of inputs: 3
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Manufacturer series: Mini Logic
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVC
Number of channels: 1
Kind of integrated circuit: buffer; inverter; Schmitt trigger
Produkt ist nicht verfügbar
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74LVC1G58GS,132 74LVC1G58.pdf
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; buffer,inverter,Schmitt trigger; Ch: 1; IN: 3; SMD
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR; XNOR
Number of inputs: 3
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Manufacturer series: Mini Logic
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVC
Number of channels: 1
Kind of integrated circuit: buffer; inverter; Schmitt trigger
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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BAS70XY,115 BAS70XY.pdf
BAS70XY,115
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC88,SOT363,TSSOP6; SMD; 70V; 70mA
Type of diode: Schottky switching
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series x2
Max. forward voltage: 1V
Kind of package: reel; tape
Capacitance: 2pF
Max. forward impulse current: 0.1A
auf Bestellung 1278 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
295+0.29 EUR
432+0.2 EUR
500+0.17 EUR
544+0.15 EUR
589+0.14 EUR
1000+0.12 EUR
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NX3008PBKS,115 NX3008PBKS.pdf
NX3008PBKS,115
Hersteller: NEXPERIA
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -0.2A; 80mW
Mounting: SMD
Power dissipation: 80mW
Gate charge: 0.72nC
Polarisation: unipolar
Drain current: -0.2A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: SC88; SOT363; TSSOP6
On-state resistance: 4.1Ω
auf Bestellung 1631 Stücke:
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193+0.44 EUR
285+0.3 EUR
343+0.25 EUR
385+0.23 EUR
511+0.17 EUR
569+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 193 Stücke
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NX3008NBK,215 NX3008NBK.pdf
NX3008NBK,215
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.4A; 350mW; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.4A
Power dissipation: 0.35W
Case: SOT23; TO236AB
Gate-source voltage: ±8V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 0.68nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2506 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
295+0.29 EUR
379+0.23 EUR
447+0.19 EUR
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NX3008NBKS,115 NX3008NBKS.pdf
NX3008NBKS,115
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 0.35A; 280mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.35A
Power dissipation: 0.28W
Case: SC88; SOT363; TSSOP6
Gate-source voltage: ±8V
On-state resistance: 1.4Ω
Mounting: SMD
Gate charge: 0.68nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 6105 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
278+0.31 EUR
385+0.23 EUR
468+0.18 EUR
582+0.14 EUR
695+0.12 EUR
770+0.11 EUR
1000+0.1 EUR
3000+0.098 EUR
Mindestbestellmenge: 278 Stücke
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NX138AKVL NX138AK.pdf
NX138AKVL
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Trench; unipolar; 60V; 0.12A; Idm: 0.765A
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Case: SOT23; TO236AB
Technology: Trench
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.12A
Gate charge: 0.9nC
Power dissipation: 0.265W
On-state resistance: 10Ω
Pulsed drain current: 0.765A
Gate-source voltage: ±20V
auf Bestellung 8774 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
1500+0.057 EUR
1880+0.045 EUR
2100+0.04 EUR
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BAS70XY-QX
Hersteller: NEXPERIA
Category: SMD Schottky diodes
Description: Diode: Schottky switching; SC88,SOT363,TSSOP6; SMD; 70V; 70mA
Type of diode: Schottky switching
Case: SC88; SOT363; TSSOP6
Mounting: SMD
Max. off-state voltage: 70V
Load current: 70mA
Semiconductor structure: double series x2
Max. forward voltage: 1V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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PSMN040-100MSEX PSMN040-100MSE.pdf
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 30A; Idm: 121A; 91W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 30A
Pulsed drain current: 121A
Power dissipation: 91W
Case: LFPAK33; SOT1210
Gate-source voltage: ±20V
On-state resistance: 29.4mΩ
Mounting: SMD
Gate charge: 30nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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BZX79-C6V2,133 BZX79.pdf
BZX79-C6V2,133
Hersteller: NEXPERIA
Category: THT Zener diodes
Description: Diode: Zener; 0.4/0.5W; 6.2V; Ammo Pack; DO35; single diode; 250mA
Type of diode: Zener
Power dissipation: 0.4/0.5W
Zener voltage: 6.2V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Max. load current: 0.25A
Max. forward voltage: 0.9V
Produkt ist nicht verfügbar
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BZX79-C6V2,143 BZX79.pdf
Hersteller: NEXPERIA
Category: THT Zener diodes
Description: Diode: Zener; 0.4/0.5W; 6.2V; Ammo Pack; DO35; single diode; 250mA
Type of diode: Zener
Power dissipation: 0.4/0.5W
Zener voltage: 6.2V
Kind of package: Ammo Pack
Case: DO35
Mounting: THT
Tolerance: ±5%
Semiconductor structure: single diode
Max. load current: 0.25A
Produkt ist nicht verfügbar
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PMV90ENER PMV90ENE.pdf
PMV90ENER
Hersteller: NEXPERIA
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.9A; Idm: 12A; SOT23,TO236AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.9A
Pulsed drain current: 12A
Case: SOT23; TO236AB
On-state resistance: 0.118Ω
Mounting: SMD
Gate charge: 5.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Features of semiconductor devices: logic level
Version: ESD
auf Bestellung 4 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
4+21.28 EUR
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74AHC32D,118 74AHC32D.112.pdf
74AHC32D,118
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; reel,tape; AHC
Type of integrated circuit: digital
Technology: CMOS
Case: SO14
Mounting: SMD
Kind of gate: OR
Number of channels: quad; 4
Kind of package: reel; tape
Number of inputs: 2
Family: AHC
auf Bestellung 1123 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
200+0.43 EUR
239+0.36 EUR
268+0.32 EUR
Mindestbestellmenge: 200 Stücke
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74AHC32BQ,115 74AHC32BQ,115.pdf
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; DHVQFN14; 2÷5.5VDC; -40÷125°C
Type of integrated circuit: digital
Technology: CMOS
Case: DHVQFN14
Mounting: SMD
Kind of gate: OR
Number of channels: quad; 4
Kind of package: reel; tape
Operating temperature: -40...125°C
Delay time: 14.5ns
Quiescent current: 40µA
Number of inputs: 2
Supply voltage: 2...5.5V DC
Family: AHC
Produkt ist nicht verfügbar
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74AHC32PW,118 74AHC32PW,118.pdf
74AHC32PW,118
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; -40÷125°C
Type of integrated circuit: digital
Technology: CMOS
Case: TSSOP14
Mounting: SMD
Kind of gate: OR
Number of channels: quad; 4
Kind of package: reel; tape
Operating temperature: -40...125°C
Delay time: 14.5ns
Quiescent current: 40µA
Number of inputs: 2
Supply voltage: 2...5.5V DC
Family: AHC
Produkt ist nicht verfügbar
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74VHC32D,118 74VHC32D,118.pdf
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; SO14; 2÷5.5VDC; -40÷125°C
Type of integrated circuit: digital
Technology: CMOS
Case: SO14
Mounting: SMD
Kind of gate: OR
Number of channels: 4
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of inputs: 2
Supply voltage: 2...5.5V DC
Family: VHC
Produkt ist nicht verfügbar
Mindestbestellmenge: 7500 Stücke
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74VHC32PW,118 74VHC_VHCT32.pdf
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; OR; Ch: 4; IN: 2; CMOS; SMD; TSSOP14; 2÷5.5VDC; -40÷125°C
Type of integrated circuit: digital
Technology: CMOS
Case: TSSOP14
Mounting: SMD
Kind of gate: OR
Number of channels: 4
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of inputs: 2
Supply voltage: 2...5.5V DC
Family: VHC
Produkt ist nicht verfügbar
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HEF4021BTTJ HEF4021B.pdf
Hersteller: NEXPERIA
Category: Shift registers
Description: IC: digital; 8bit,static shift register; CMOS; SMD; TSSOP16
Type of integrated circuit: digital
Kind of integrated circuit: 8bit; static shift register
Technology: CMOS
Mounting: SMD
Case: TSSOP16
Family: HEF4000B
Operating temperature: -40...85°C
Supply voltage: 3...15V DC
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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HEF4521BT,653 HEF4521BP.652.pdf
HEF4521BT,653
Hersteller: NEXPERIA
Category: Counters/dividers
Description: IC: digital; 24-stage,frequency divider,oscillator; CMOS; SMD
Type of integrated circuit: digital
Family: HEF4000B
Mounting: SMD
Case: SO16
Kind of integrated circuit: 24-stage; frequency divider; oscillator
Kind of package: reel; tape
Technology: CMOS
auf Bestellung 971 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
77+1.11 EUR
107+0.8 EUR
110+0.77 EUR
Mindestbestellmenge: 77 Stücke
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74LVC1G97GW,125 74LVC1G97x-DTE.pdf
74LVC1G97GW,125
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; configurable,multiple-function; IN: 3; CMOS,TTL; SMD
Type of integrated circuit: digital
Kind of gate: configurable; multiple-function
Number of inputs: 3
Technology: CMOS; TTL
Mounting: SMD
Case: SC88
Supply voltage: 1.65...5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVC
Manufacturer series: Mini Logic
Produkt ist nicht verfügbar
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74LVC1G97GM,132 74LVC1G97.pdf
Hersteller: NEXPERIA
Category: Gates, inverters
Description: IC: digital; buffer,inverter,multiplexer,Schmitt trigger; Ch: 1
Type of integrated circuit: digital
Kind of gate: AND; configurable; multiple-function; NAND; NOR; OR
Number of inputs: 3
Technology: CMOS; TTL
Mounting: SMD
Case: XSON6
Supply voltage: 1.65...5.5V DC
Operating temperature: -40...125°C
Kind of package: reel; tape
Kind of input: with Schmitt trigger
Family: LVC
Number of channels: 1
Manufacturer series: Mini Logic
Kind of integrated circuit: buffer; inverter; multiplexer; Schmitt trigger
Produkt ist nicht verfügbar
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