Produkte > ONSEMI > Alle Produkte des Herstellers ONSEMI (140279) > Seite 441 nach 2338

Wählen Sie Seite:   [  << Vorherige Seite ]  1 233 436 437 438 439 440 441 442 443 444 445 446 466 699 932 1165 1398 1631 1864 2097 2330 2338  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
NDD02N60ZT4G NDD02N60ZT4G onsemi NDx02N60Z.pdf Description: MOSFET N-CH 600V 2.2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTB6412ANT4G NTB6412ANT4G onsemi ntb6412an-d.pdf Description: MOSFET N-CH 100V 58A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 18.2mOhm @ 58A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTB6413ANT4G NTB6413ANT4G onsemi ntb6413an-d.pdf Description: MOSFET N-CH 100V 42A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 42A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
auf Bestellung 31592 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.8 EUR
10+3.12 EUR
100+2.15 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
NTD5865NLT4G NTD5865NLT4G onsemi NTD5865NL-D.PDF Description: MOSFET N-CH 60V 46A DPAK
auf Bestellung 37 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.69 EUR
10+2.41 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
NTD5865NT4G NTD5865NT4G onsemi ntd5865n-d.pdf Description: MOSFET N-CH 60V 43A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1261 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTD6414ANT4G NTD6414ANT4G onsemi ntd6414an-d.pdf Description: MOSFET N-CH 100V 32A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 32A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
auf Bestellung 1680 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.45 EUR
12+1.55 EUR
100+1.03 EUR
500+0.81 EUR
1000+0.74 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
NTD6416ANLT4G NTD6416ANLT4G onsemi ntd6416anl-d.pdf Description: MOSFET N-CH 100V 19A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 19A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
auf Bestellung 3374 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.83 EUR
10+1.8 EUR
100+1.21 EUR
500+0.96 EUR
1000+0.89 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
NTD6416ANT4G NTD6416ANT4G onsemi ntd6416an-d.pdf Description: MOSFET N-CH 100V 17A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 17A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
auf Bestellung 10867 Stücke:
Lieferzeit 10-14 Tag (e)
9+1.99 EUR
13+1.42 EUR
100+1.06 EUR
500+0.95 EUR
1000+0.87 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
2SC5658RM3T5G 2SC5658RM3T5G onsemi 2sc5658m3-d.pdf Description: TRANS NPN 50V 0.1A SOT-723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 60mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 215 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-723
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
auf Bestellung 37540 Stücke:
Lieferzeit 10-14 Tag (e)
40+0.44 EUR
68+0.26 EUR
109+0.16 EUR
500+0.12 EUR
1000+0.11 EUR
2000+0.094 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
ESD9P5.0ST5G ESD9P5.0ST5G onsemi esd9p5.0s-d.pdf Description: TVS DIODE 5VWM 9.8VC SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 1.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 9.8V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 56000 Stücke:
Lieferzeit 10-14 Tag (e)
112+0.16 EUR
164+0.11 EUR
192+0.092 EUR
Mindestbestellmenge: 112
Im Einkaufswagen  Stück im Wert von  UAH
NCP1529ASNT1G NCP1529ASNT1G onsemi ncp1529-d.pdf description Description: IC REG BUCK ADJ 1A 5TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 1.7MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 5-TSOP
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.9V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.9V
Part Status: Not For New Designs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCP2811AMTTXG NCP2811AMTTXG onsemi ncp2811-d.pdf Description: IC AMP STEREO HEADPHONE 12WQFN
Features: Depop, Short-Circuit and Thermal Protection, Shutdown
Packaging: Cut Tape (CT)
Package / Case: 12-VFQFN Exposed Pad
Output Type: Headphones, 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class AB
Voltage - Supply: 2.7V ~ 5V
Max Output Power x Channels @ Load: 110mW x 2 @ 16Ohm
Supplier Device Package: 12-WQFN (3x3)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCP51460SN33T1G NCP51460SN33T1G onsemi ncp51460-d.pdf Description: IC VREF SERIES 1% SOT23-3
Tolerance: ±1%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 18ppm/°C Typical
Output Type: Fixed
Mounting Type: Surface Mount
Voltage - Input: 4.2V ~ 28V
Reference Type: Series
Operating Temperature: 0°C ~ 100°C (TA)
Current - Supply: 220µA
Supplier Device Package: SOT-23-3 (TO-236)
Voltage - Output (Min/Fixed): 3.3V
Noise - 0.1Hz to 10Hz: 12µVp-p
Noise - 10Hz to 10kHz: 18µVrms
Part Status: Active
Current - Output: 20 mA
auf Bestellung 24989 Stücke:
Lieferzeit 10-14 Tag (e)
17+1.04 EUR
25+0.73 EUR
27+0.65 EUR
100+0.57 EUR
250+0.53 EUR
500+0.51 EUR
1000+0.49 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
NCP571MN10TBG NCP571MN10TBG onsemi ncp571-d.pdf Description: IC REG LINEAR 1V 150MA 6DFN
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCP571MN12TBG NCP571MN12TBG onsemi ncp571-d.pdf Description: IC REG LINEAR 1.2V 150MA 6DFN
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NCP571SN08T1G NCP571SN08T1G onsemi ncp571-d.pdf Description: IC REG LINEAR 0.8V 150MA 5TSOP
auf Bestellung 1025 Stücke:
Lieferzeit 10-14 Tag (e)
18+1 EUR
21+0.86 EUR
25+0.8 EUR
100+0.64 EUR
250+0.6 EUR
500+0.5 EUR
1000+0.39 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
NCP571SN09T1G NCP571SN09T1G onsemi ncp571-d.pdf Description: IC REG LINEAR 0.9V 150MA 5TSOP
auf Bestellung 2636 Stücke:
Lieferzeit 10-14 Tag (e)
18+1 EUR
21+0.86 EUR
25+0.8 EUR
100+0.64 EUR
250+0.6 EUR
500+0.5 EUR
1000+0.39 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
NCP571SN10T1G NCP571SN10T1G onsemi ncp571-d.pdf Description: IC REG LINEAR 1V 150MA 5TSOP
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NCP571SN12T1G NCP571SN12T1G onsemi ncp571-d.pdf Description: IC REG LINEAR 1.2V 150MA 5TSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCV571SN10T1G NCV571SN10T1G onsemi ncp571-d.pdf Description: IC REG LINEAR 1V 150MA 5TSOP
auf Bestellung 5279 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NCV8605MN28T2G NCV8605MN28T2G onsemi ncv8605-d.pdf Description: IC REG LINEAR 2.8V 500MA 6-DFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 180 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 6-DFN (3x3.3)
Voltage - Output (Min/Fixed): 2.8V
Grade: Automotive
Voltage Dropout (Max): 0.24V @ 500mA
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
5+3.89 EUR
10+2.44 EUR
25+2.07 EUR
100+1.64 EUR
250+1.43 EUR
500+1.3 EUR
1000+1.2 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
NCV8605MNADJT2G NCV8605MNADJT2G onsemi ncv8605-d.pdf Description: IC REG LINEAR POS ADJ 500MA 6DFN
auf Bestellung 1882 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NCV8606MN15T2G NCV8606MN15T2G onsemi ncv8605-d.pdf Description: IC REG LINEAR 1.5V 500MA 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 180 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 6-DFN (3x3.3)
Voltage - Output (Min/Fixed): 1.5V
Control Features: Enable
Grade: Automotive
Voltage Dropout (Max): 0.36V @ 500mA
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.66 EUR
10+2.39 EUR
25+2.25 EUR
100+1.8 EUR
250+1.58 EUR
500+1.53 EUR
1000+1.22 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
NSI45015WT1G NSI45015WT1G onsemi nsi45015w-d.pdf Description: IC CURRENT REGULATOR 20% SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Regulator
Voltage - Input: 45V
Current - Output: 15mA
Accuracy: ±20%
Operating Temperature: -55°C ~ 150°C
Supplier Device Package: SOD-123
Part Status: Active
auf Bestellung 19969 Stücke:
Lieferzeit 10-14 Tag (e)
46+0.39 EUR
68+0.26 EUR
77+0.23 EUR
100+0.2 EUR
250+0.18 EUR
500+0.17 EUR
1000+0.16 EUR
Mindestbestellmenge: 46
Im Einkaufswagen  Stück im Wert von  UAH
NSI50010YT1G NSI50010YT1G onsemi nsi50010y-d.pdf Description: IC CURRENT REGULATOR SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Regulator
Voltage - Input: 50V
Current - Output: 10mA
Operating Temperature: -55°C ~ 150°C
Supplier Device Package: SOD-123
Part Status: Active
auf Bestellung 73041 Stücke:
Lieferzeit 10-14 Tag (e)
36+0.49 EUR
52+0.34 EUR
59+0.3 EUR
100+0.26 EUR
250+0.24 EUR
500+0.23 EUR
1000+0.22 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
NSR05F20NXT5G NSR05F20NXT5G onsemi nsr05f20-d.pdf Description: DIODE SCHOTTKY 20V 500MA 2DSN
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: 2-DSN (1x0.6), (0402)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 500 mA
Current - Reverse Leakage @ Vr: 75 µA @ 20 V
auf Bestellung 29257 Stücke:
Lieferzeit 10-14 Tag (e)
33+0.55 EUR
49+0.37 EUR
100+0.29 EUR
500+0.22 EUR
1000+0.19 EUR
2000+0.18 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
NSR05F30NXT5G NSR05F30NXT5G onsemi nsr05f30.pdf Description: DIODE SCHOTTKY 30V 500MA 2DSN
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: 2-DSN (1x0.6), (0402)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 500 mA
Current - Reverse Leakage @ Vr: 75 µA @ 30 V
auf Bestellung 51971 Stücke:
Lieferzeit 10-14 Tag (e)
27+0.67 EUR
45+0.39 EUR
100+0.27 EUR
500+0.22 EUR
1000+0.19 EUR
2000+0.18 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
NSR05F40NXT5G NSR05F40NXT5G onsemi nsr05f40-d.pdf Description: DIODE SCHOTTKY 40V 500MA 2DSN
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: 2-DSN (1x0.6), (0402)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 500 mA
Current - Reverse Leakage @ Vr: 75 µA @ 40 V
auf Bestellung 480420 Stücke:
Lieferzeit 10-14 Tag (e)
33+0.55 EUR
85+0.21 EUR
100+0.19 EUR
500+0.18 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
NSR10F20NXT5G NSR10F20NXT5G onsemi nsr10f20-d.pdf Description: DIODE SCHOTTKY 20V 1A 2DSN
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: 2-DSN (1.4x0.6)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
auf Bestellung 21211 Stücke:
Lieferzeit 10-14 Tag (e)
77+0.23 EUR
98+0.18 EUR
Mindestbestellmenge: 77
Im Einkaufswagen  Stück im Wert von  UAH
NSR10F30NXT5G NSR10F30NXT5G onsemi nsr10f30-d.pdf Description: DIODE SCHOTTKY 30V 1A 2DSN
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: 2-DSN (1.4x0.6)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
auf Bestellung 11912 Stücke:
Lieferzeit 10-14 Tag (e)
25+0.7 EUR
38+0.47 EUR
100+0.35 EUR
500+0.26 EUR
1000+0.23 EUR
2000+0.21 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
NSR10F40NXT5G NSR10F40NXT5G onsemi nsr10f40-d.pdf Description: DIODE SCHOTTKY 40V 1A 2DSN
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: 2-DSN (1.4x0.6)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
auf Bestellung 46196 Stücke:
Lieferzeit 10-14 Tag (e)
28+0.63 EUR
46+0.39 EUR
100+0.35 EUR
500+0.26 EUR
1000+0.23 EUR
2000+0.21 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
NSR20F20NXT5G NSR20F20NXT5G onsemi nsr20f20-d.pdf Description: DIODE SCHOTTKY 20V 2A 2DSN
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: 2-DSN (1.6x.80)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 20 V
auf Bestellung 14542 Stücke:
Lieferzeit 10-14 Tag (e)
19+0.95 EUR
26+0.69 EUR
100+0.5 EUR
500+0.38 EUR
1000+0.33 EUR
2000+0.31 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
NSR20F30NXT5G NSR20F30NXT5G onsemi nsr20f30-d.pdf Description: DIODE SCHOTTKY 30V 2A 2DSN
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: 2-DSN (1.6x.80)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSS138K BSS138K onsemi bss138k-d.pdf Description: MOSFET N-CH 50V 220MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 50mA, 5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 58 pF @ 25 V
auf Bestellung 106955 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.097 EUR
6000+0.088 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
FDC8601 FDC8601 onsemi fdc8601-d.pdf Description: MOSFET N-CH 100V 2.7A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 109mOhm @ 2.7A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 50 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.82 EUR
6000+0.78 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
FDD86326 FDD86326 onsemi fdd86326-d.pdf Description: MOSFET N-CH 80V 8A/37A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 50 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.37 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
FDMC86240 FDMC86240 onsemi fdmc86240-d.pdf Description: MOSFET N-CH 150V 4.6A/16A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 4.6A, 10V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 75 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.5 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
FDMC86324 FDMC86324 onsemi fdmc86324-d.pdf Description: MOSFET N-CH 80V 7A/20A POWER33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 965 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDMS7682 FDMS7682 onsemi fdms7682-d.pdf Description: MOSFET N-CH 30V 16A/22A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1885 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDMS86104 FDMS86104 onsemi fdms86104-d.pdf Description: MOSFET N-CH 100V 7A/16A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 923 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDMS86252 FDMS86252 onsemi fdms86252-d.pdf Description: MOSFET N-CH 150V 4.6A/16A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 4.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 75 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDS86106 FDS86106 onsemi fds86106-d.pdf Description: MOSFET N-CH 100V 3.4A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V
Power Dissipation (Max): 5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 208 pF @ 50 V
auf Bestellung 32500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.83 EUR
5000+0.77 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
FDS86141 FDS86141 onsemi fds86141-d.pdf Description: MOSFET N-CH 100V 7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 934 pF @ 50 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.42 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
FDS86240 FDS86240 onsemi fds86240-d.pdf Description: MOSFET N-CH 150V 7.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 19.8mOhm @ 7.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 75 V
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+2.17 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
FDS86242 FDS86242 onsemi fds86242-d.pdf Description: MOSFET N-CH 150V 4.1A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 4.1A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 75 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+0.51 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
FDS89161 FDS89161 onsemi fds89161-d.pdf Description: MOSFET 2N-CH 100V 2.7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 50V
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.09 EUR
5000+0.99 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
BSS138K BSS138K onsemi bss138k-d.pdf Description: MOSFET N-CH 50V 220MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 50mA, 5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 58 pF @ 25 V
auf Bestellung 106981 Stücke:
Lieferzeit 10-14 Tag (e)
36+0.49 EUR
58+0.3 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.12 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
FDC8601 FDC8601 onsemi fdc8601-d.pdf Description: MOSFET N-CH 100V 2.7A SUPERSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 109mOhm @ 2.7A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 50 V
auf Bestellung 6620 Stücke:
Lieferzeit 10-14 Tag (e)
6+2.96 EUR
10+1.89 EUR
100+1.24 EUR
500+1.01 EUR
1000+0.95 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
FDD86326 FDD86326 onsemi fdd86326-d.pdf Description: MOSFET N-CH 80V 8A/37A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 50 V
auf Bestellung 9700 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.45 EUR
10+2.89 EUR
100+1.99 EUR
500+1.61 EUR
1000+1.48 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
FDMC86240 FDMC86240 onsemi fdmc86240-d.pdf Description: MOSFET N-CH 150V 4.6A/16A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 4.6A, 10V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 75 V
auf Bestellung 15451 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.79 EUR
10+3.11 EUR
100+2.16 EUR
500+1.83 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
FDMS7682 FDMS7682 onsemi fdms7682-d.pdf Description: MOSFET N-CH 30V 16A/22A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1885 pF @ 15 V
auf Bestellung 1457 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.71 EUR
17+1.07 EUR
100+0.7 EUR
500+0.54 EUR
1000+0.49 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
FDMS86104 FDMS86104 onsemi fdms86104-d.pdf Description: MOSFET N-CH 100V 7A/16A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 923 pF @ 50 V
auf Bestellung 949 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.42 EUR
10+3.53 EUR
100+2.46 EUR
500+2 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
FDMS86252 FDMS86252 onsemi fdms86252-d.pdf Description: MOSFET N-CH 150V 4.6A/16A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 4.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 75 V
auf Bestellung 2933 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.16 EUR
10+3.36 EUR
100+2.33 EUR
500+1.89 EUR
1000+1.85 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
FDS86106 FDS86106 onsemi fds86106-d.pdf Description: MOSFET N-CH 100V 3.4A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V
Power Dissipation (Max): 5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 208 pF @ 50 V
auf Bestellung 33396 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.15 EUR
10+2.01 EUR
100+1.35 EUR
500+1.07 EUR
1000+0.98 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
FDS86141 FDS86141 onsemi fds86141-d.pdf Description: MOSFET N-CH 100V 7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 934 pF @ 50 V
auf Bestellung 5025 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.63 EUR
10+3 EUR
100+2.08 EUR
500+1.74 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
FDS86240 FDS86240 onsemi fds86240-d.pdf Description: MOSFET N-CH 150V 7.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 19.8mOhm @ 7.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 75 V
auf Bestellung 14802 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.75 EUR
10+3.7 EUR
100+2.69 EUR
500+2.31 EUR
1000+2.2 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
FDS86242 FDS86242 onsemi fds86242-d.pdf Description: MOSFET N-CH 150V 4.1A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 4.1A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 75 V
auf Bestellung 4767 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.08 EUR
14+1.31 EUR
100+0.86 EUR
500+0.67 EUR
1000+0.61 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
FDS89161 FDS89161 onsemi fds89161-d.pdf Description: MOSFET 2N-CH 100V 2.7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 50V
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 5850 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.85 EUR
11+1.65 EUR
100+1.33 EUR
500+1.24 EUR
1000+1.21 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
CAT3661HV3-GT2 CAT3661HV3-GT2 onsemi Description: IC LED DRIVER RGLTR 5MA 16TQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-WFQFN Exposed Pad
Voltage - Output: 7V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 100kHz, 130kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 5mA
Internal Switch(s): Yes
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: 16-TQFN (3x3)
Voltage - Supply (Min): 2V
Voltage - Supply (Max): 5.5V
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LMV982MUTAG LMV982MUTAG onsemi lmv981-d.pdf Description: IC OPAMP GP 2 CIRCUIT 10UQFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFQFN
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 75µA (x2 Channels)
Slew Rate: 0.48V/µs
Gain Bandwidth Product: 1.5 MHz
Current - Input Bias: 1 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 10-UQFN (1.4x1.8)
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 65 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NDD02N60ZT4G NDx02N60Z.pdf
NDD02N60ZT4G
Hersteller: onsemi
Description: MOSFET N-CH 600V 2.2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Tc)
Rds On (Max) @ Id, Vgs: 4.8Ohm @ 1A, 10V
Power Dissipation (Max): 57W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 50µA
Supplier Device Package: DPAK
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 325 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTB6412ANT4G ntb6412an-d.pdf
NTB6412ANT4G
Hersteller: onsemi
Description: MOSFET N-CH 100V 58A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 58A (Tc)
Rds On (Max) @ Id, Vgs: 18.2mOhm @ 58A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3500 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTB6413ANT4G ntb6413an-d.pdf
NTB6413ANT4G
Hersteller: onsemi
Description: MOSFET N-CH 100V 42A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 42A (Tc)
Rds On (Max) @ Id, Vgs: 28mOhm @ 42A, 10V
Power Dissipation (Max): 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 51 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
auf Bestellung 31592 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.8 EUR
10+3.12 EUR
100+2.15 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
NTD5865NLT4G NTD5865NL-D.PDF
NTD5865NLT4G
Hersteller: onsemi
Description: MOSFET N-CH 60V 46A DPAK
auf Bestellung 37 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.69 EUR
10+2.41 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
NTD5865NT4G ntd5865n-d.pdf
NTD5865NT4G
Hersteller: onsemi
Description: MOSFET N-CH 60V 43A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Tc)
Rds On (Max) @ Id, Vgs: 18mOhm @ 20A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1261 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTD6414ANT4G ntd6414an-d.pdf
NTD6414ANT4G
Hersteller: onsemi
Description: MOSFET N-CH 100V 32A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Tc)
Rds On (Max) @ Id, Vgs: 37mOhm @ 32A, 10V
Power Dissipation (Max): 100W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 25 V
auf Bestellung 1680 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.45 EUR
12+1.55 EUR
100+1.03 EUR
500+0.81 EUR
1000+0.74 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
NTD6416ANLT4G ntd6416anl-d.pdf
NTD6416ANLT4G
Hersteller: onsemi
Description: MOSFET N-CH 100V 19A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 74mOhm @ 19A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
auf Bestellung 3374 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.83 EUR
10+1.8 EUR
100+1.21 EUR
500+0.96 EUR
1000+0.89 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
NTD6416ANT4G ntd6416an-d.pdf
NTD6416ANT4G
Hersteller: onsemi
Description: MOSFET N-CH 100V 17A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 81mOhm @ 17A, 10V
Power Dissipation (Max): 71W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 620 pF @ 25 V
auf Bestellung 10867 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+1.99 EUR
13+1.42 EUR
100+1.06 EUR
500+0.95 EUR
1000+0.87 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
2SC5658RM3T5G 2sc5658m3-d.pdf
2SC5658RM3T5G
Hersteller: onsemi
Description: TRANS NPN 50V 0.1A SOT-723
Packaging: Cut Tape (CT)
Package / Case: SOT-723
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 60mA
Current - Collector Cutoff (Max): 500nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 215 @ 1mA, 6V
Frequency - Transition: 180MHz
Supplier Device Package: SOT-723
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 260 mW
auf Bestellung 37540 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
40+0.44 EUR
68+0.26 EUR
109+0.16 EUR
500+0.12 EUR
1000+0.11 EUR
2000+0.094 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
ESD9P5.0ST5G esd9p5.0s-d.pdf
ESD9P5.0ST5G
Hersteller: onsemi
Description: TVS DIODE 5VWM 9.8VC SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 1.3pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOD-923
Unidirectional Channels: 1
Voltage - Breakdown (Min): 5.8V
Voltage - Clamping (Max) @ Ipp: 9.8V
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 56000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
112+0.16 EUR
164+0.11 EUR
192+0.092 EUR
Mindestbestellmenge: 112
Im Einkaufswagen  Stück im Wert von  UAH
NCP1529ASNT1G description ncp1529-d.pdf
NCP1529ASNT1G
Hersteller: onsemi
Description: IC REG BUCK ADJ 1A 5TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 1A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 1.7MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 5-TSOP
Synchronous Rectifier: Yes
Voltage - Output (Max): 3.9V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.9V
Part Status: Not For New Designs
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCP2811AMTTXG ncp2811-d.pdf
NCP2811AMTTXG
Hersteller: onsemi
Description: IC AMP STEREO HEADPHONE 12WQFN
Features: Depop, Short-Circuit and Thermal Protection, Shutdown
Packaging: Cut Tape (CT)
Package / Case: 12-VFQFN Exposed Pad
Output Type: Headphones, 2-Channel (Stereo)
Mounting Type: Surface Mount
Type: Class AB
Voltage - Supply: 2.7V ~ 5V
Max Output Power x Channels @ Load: 110mW x 2 @ 16Ohm
Supplier Device Package: 12-WQFN (3x3)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCP51460SN33T1G ncp51460-d.pdf
NCP51460SN33T1G
Hersteller: onsemi
Description: IC VREF SERIES 1% SOT23-3
Tolerance: ±1%
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Temperature Coefficient: 18ppm/°C Typical
Output Type: Fixed
Mounting Type: Surface Mount
Voltage - Input: 4.2V ~ 28V
Reference Type: Series
Operating Temperature: 0°C ~ 100°C (TA)
Current - Supply: 220µA
Supplier Device Package: SOT-23-3 (TO-236)
Voltage - Output (Min/Fixed): 3.3V
Noise - 0.1Hz to 10Hz: 12µVp-p
Noise - 10Hz to 10kHz: 18µVrms
Part Status: Active
Current - Output: 20 mA
auf Bestellung 24989 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.04 EUR
25+0.73 EUR
27+0.65 EUR
100+0.57 EUR
250+0.53 EUR
500+0.51 EUR
1000+0.49 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
NCP571MN10TBG ncp571-d.pdf
NCP571MN10TBG
Hersteller: onsemi
Description: IC REG LINEAR 1V 150MA 6DFN
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCP571MN12TBG ncp571-d.pdf
NCP571MN12TBG
Hersteller: onsemi
Description: IC REG LINEAR 1.2V 150MA 6DFN
auf Bestellung 9 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NCP571SN08T1G ncp571-d.pdf
NCP571SN08T1G
Hersteller: onsemi
Description: IC REG LINEAR 0.8V 150MA 5TSOP
auf Bestellung 1025 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+1 EUR
21+0.86 EUR
25+0.8 EUR
100+0.64 EUR
250+0.6 EUR
500+0.5 EUR
1000+0.39 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
NCP571SN09T1G ncp571-d.pdf
NCP571SN09T1G
Hersteller: onsemi
Description: IC REG LINEAR 0.9V 150MA 5TSOP
auf Bestellung 2636 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+1 EUR
21+0.86 EUR
25+0.8 EUR
100+0.64 EUR
250+0.6 EUR
500+0.5 EUR
1000+0.39 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
NCP571SN10T1G ncp571-d.pdf
NCP571SN10T1G
Hersteller: onsemi
Description: IC REG LINEAR 1V 150MA 5TSOP
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NCP571SN12T1G ncp571-d.pdf
NCP571SN12T1G
Hersteller: onsemi
Description: IC REG LINEAR 1.2V 150MA 5TSOP
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCV571SN10T1G ncp571-d.pdf
NCV571SN10T1G
Hersteller: onsemi
Description: IC REG LINEAR 1V 150MA 5TSOP
auf Bestellung 5279 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NCV8605MN28T2G ncv8605-d.pdf
NCV8605MN28T2G
Hersteller: onsemi
Description: IC REG LINEAR 2.8V 500MA 6-DFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 180 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 6-DFN (3x3.3)
Voltage - Output (Min/Fixed): 2.8V
Grade: Automotive
Voltage Dropout (Max): 0.24V @ 500mA
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.89 EUR
10+2.44 EUR
25+2.07 EUR
100+1.64 EUR
250+1.43 EUR
500+1.3 EUR
1000+1.2 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
NCV8605MNADJT2G ncv8605-d.pdf
NCV8605MNADJT2G
Hersteller: onsemi
Description: IC REG LINEAR POS ADJ 500MA 6DFN
auf Bestellung 1882 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
NCV8606MN15T2G ncv8605-d.pdf
NCV8606MN15T2G
Hersteller: onsemi
Description: IC REG LINEAR 1.5V 500MA 6DFN
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 180 µA
Voltage - Input (Max): 6V
Number of Regulators: 1
Supplier Device Package: 6-DFN (3x3.3)
Voltage - Output (Min/Fixed): 1.5V
Control Features: Enable
Grade: Automotive
Voltage Dropout (Max): 0.36V @ 500mA
Protection Features: Over Current, Over Temperature
Qualification: AEC-Q100
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.66 EUR
10+2.39 EUR
25+2.25 EUR
100+1.8 EUR
250+1.58 EUR
500+1.53 EUR
1000+1.22 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
NSI45015WT1G nsi45015w-d.pdf
NSI45015WT1G
Hersteller: onsemi
Description: IC CURRENT REGULATOR 20% SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Regulator
Voltage - Input: 45V
Current - Output: 15mA
Accuracy: ±20%
Operating Temperature: -55°C ~ 150°C
Supplier Device Package: SOD-123
Part Status: Active
auf Bestellung 19969 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
46+0.39 EUR
68+0.26 EUR
77+0.23 EUR
100+0.2 EUR
250+0.18 EUR
500+0.17 EUR
1000+0.16 EUR
Mindestbestellmenge: 46
Im Einkaufswagen  Stück im Wert von  UAH
NSI50010YT1G nsi50010y-d.pdf
NSI50010YT1G
Hersteller: onsemi
Description: IC CURRENT REGULATOR SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Regulator
Voltage - Input: 50V
Current - Output: 10mA
Operating Temperature: -55°C ~ 150°C
Supplier Device Package: SOD-123
Part Status: Active
auf Bestellung 73041 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
36+0.49 EUR
52+0.34 EUR
59+0.3 EUR
100+0.26 EUR
250+0.24 EUR
500+0.23 EUR
1000+0.22 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
NSR05F20NXT5G nsr05f20-d.pdf
NSR05F20NXT5G
Hersteller: onsemi
Description: DIODE SCHOTTKY 20V 500MA 2DSN
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: 2-DSN (1x0.6), (0402)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 500 mA
Current - Reverse Leakage @ Vr: 75 µA @ 20 V
auf Bestellung 29257 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
33+0.55 EUR
49+0.37 EUR
100+0.29 EUR
500+0.22 EUR
1000+0.19 EUR
2000+0.18 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
NSR05F30NXT5G nsr05f30.pdf
NSR05F30NXT5G
Hersteller: onsemi
Description: DIODE SCHOTTKY 30V 500MA 2DSN
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: 2-DSN (1x0.6), (0402)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 500 mA
Current - Reverse Leakage @ Vr: 75 µA @ 30 V
auf Bestellung 51971 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
27+0.67 EUR
45+0.39 EUR
100+0.27 EUR
500+0.22 EUR
1000+0.19 EUR
2000+0.18 EUR
Mindestbestellmenge: 27
Im Einkaufswagen  Stück im Wert von  UAH
NSR05F40NXT5G nsr05f40-d.pdf
NSR05F40NXT5G
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 500MA 2DSN
Packaging: Cut Tape (CT)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 500mA
Supplier Device Package: 2-DSN (1x0.6), (0402)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 500 mA
Current - Reverse Leakage @ Vr: 75 µA @ 40 V
auf Bestellung 480420 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
33+0.55 EUR
85+0.21 EUR
100+0.19 EUR
500+0.18 EUR
Mindestbestellmenge: 33
Im Einkaufswagen  Stück im Wert von  UAH
NSR10F20NXT5G nsr10f20-d.pdf
NSR10F20NXT5G
Hersteller: onsemi
Description: DIODE SCHOTTKY 20V 1A 2DSN
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: 2-DSN (1.4x0.6)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 20 V
auf Bestellung 21211 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+0.23 EUR
98+0.18 EUR
Mindestbestellmenge: 77
Im Einkaufswagen  Stück im Wert von  UAH
NSR10F30NXT5G nsr10f30-d.pdf
NSR10F30NXT5G
Hersteller: onsemi
Description: DIODE SCHOTTKY 30V 1A 2DSN
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: 2-DSN (1.4x0.6)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
auf Bestellung 11912 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
25+0.7 EUR
38+0.47 EUR
100+0.35 EUR
500+0.26 EUR
1000+0.23 EUR
2000+0.21 EUR
Mindestbestellmenge: 25
Im Einkaufswagen  Stück im Wert von  UAH
NSR10F40NXT5G nsr10f40-d.pdf
NSR10F40NXT5G
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 1A 2DSN
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: 2-DSN (1.4x0.6)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
auf Bestellung 46196 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.63 EUR
46+0.39 EUR
100+0.35 EUR
500+0.26 EUR
1000+0.23 EUR
2000+0.21 EUR
Mindestbestellmenge: 28
Im Einkaufswagen  Stück im Wert von  UAH
NSR20F20NXT5G nsr20f20-d.pdf
NSR20F20NXT5G
Hersteller: onsemi
Description: DIODE SCHOTTKY 20V 2A 2DSN
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: 2-DSN (1.6x.80)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 20 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 20 V
auf Bestellung 14542 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.95 EUR
26+0.69 EUR
100+0.5 EUR
500+0.38 EUR
1000+0.33 EUR
2000+0.31 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
NSR20F30NXT5G nsr20f30-d.pdf
NSR20F30NXT5G
Hersteller: onsemi
Description: DIODE SCHOTTKY 30V 2A 2DSN
Packaging: Cut Tape (CT)
Package / Case: 2-XDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: 2-DSN (1.6x.80)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 2 A
Current - Reverse Leakage @ Vr: 150 µA @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
BSS138K bss138k-d.pdf
BSS138K
Hersteller: onsemi
Description: MOSFET N-CH 50V 220MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 50mA, 5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 58 pF @ 25 V
auf Bestellung 106955 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.097 EUR
6000+0.088 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
FDC8601 fdc8601-d.pdf
FDC8601
Hersteller: onsemi
Description: MOSFET N-CH 100V 2.7A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 109mOhm @ 2.7A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 50 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.82 EUR
6000+0.78 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
FDD86326 fdd86326-d.pdf
FDD86326
Hersteller: onsemi
Description: MOSFET N-CH 80V 8A/37A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 50 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.37 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
FDMC86240 fdmc86240-d.pdf
FDMC86240
Hersteller: onsemi
Description: MOSFET N-CH 150V 4.6A/16A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 4.6A, 10V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 75 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.5 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
FDMC86324 fdmc86324-d.pdf
FDMC86324
Hersteller: onsemi
Description: MOSFET N-CH 80V 7A/20A POWER33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 965 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDMS7682 fdms7682-d.pdf
FDMS7682
Hersteller: onsemi
Description: MOSFET N-CH 30V 16A/22A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1885 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDMS86104 fdms86104-d.pdf
FDMS86104
Hersteller: onsemi
Description: MOSFET N-CH 100V 7A/16A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 923 pF @ 50 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDMS86252 fdms86252-d.pdf
FDMS86252
Hersteller: onsemi
Description: MOSFET N-CH 150V 4.6A/16A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 4.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 75 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDS86106 fds86106-d.pdf
FDS86106
Hersteller: onsemi
Description: MOSFET N-CH 100V 3.4A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V
Power Dissipation (Max): 5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 208 pF @ 50 V
auf Bestellung 32500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.83 EUR
5000+0.77 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
FDS86141 fds86141-d.pdf
FDS86141
Hersteller: onsemi
Description: MOSFET N-CH 100V 7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 934 pF @ 50 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.42 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
FDS86240 fds86240-d.pdf
FDS86240
Hersteller: onsemi
Description: MOSFET N-CH 150V 7.5A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 19.8mOhm @ 7.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 75 V
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+2.17 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
FDS86242 fds86242-d.pdf
FDS86242
Hersteller: onsemi
Description: MOSFET N-CH 150V 4.1A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 4.1A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 75 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.51 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
FDS89161 fds89161-d.pdf
FDS89161
Hersteller: onsemi
Description: MOSFET 2N-CH 100V 2.7A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 50V
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.09 EUR
5000+0.99 EUR
Mindestbestellmenge: 2500
Im Einkaufswagen  Stück im Wert von  UAH
BSS138K bss138k-d.pdf
BSS138K
Hersteller: onsemi
Description: MOSFET N-CH 50V 220MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220mA (Ta)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 50mA, 5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 2.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 58 pF @ 25 V
auf Bestellung 106981 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
36+0.49 EUR
58+0.3 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.12 EUR
Mindestbestellmenge: 36
Im Einkaufswagen  Stück im Wert von  UAH
FDC8601 fdc8601-d.pdf
FDC8601
Hersteller: onsemi
Description: MOSFET N-CH 100V 2.7A SUPERSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 109mOhm @ 2.7A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 50 V
auf Bestellung 6620 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.96 EUR
10+1.89 EUR
100+1.24 EUR
500+1.01 EUR
1000+0.95 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
FDD86326 fdd86326-d.pdf
FDD86326
Hersteller: onsemi
Description: MOSFET N-CH 80V 8A/37A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 37A (Tc)
Rds On (Max) @ Id, Vgs: 23mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta), 62W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1035 pF @ 50 V
auf Bestellung 9700 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.45 EUR
10+2.89 EUR
100+1.99 EUR
500+1.61 EUR
1000+1.48 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
FDMC86240 fdmc86240-d.pdf
FDMC86240
Hersteller: onsemi
Description: MOSFET N-CH 150V 4.6A/16A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 4.6A, 10V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 75 V
auf Bestellung 15451 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.79 EUR
10+3.11 EUR
100+2.16 EUR
500+1.83 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
FDMS7682 fdms7682-d.pdf
FDMS7682
Hersteller: onsemi
Description: MOSFET N-CH 30V 16A/22A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1885 pF @ 15 V
auf Bestellung 1457 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.71 EUR
17+1.07 EUR
100+0.7 EUR
500+0.54 EUR
1000+0.49 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
FDMS86104 fdms86104-d.pdf
FDMS86104
Hersteller: onsemi
Description: MOSFET N-CH 100V 7A/16A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 923 pF @ 50 V
auf Bestellung 949 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.42 EUR
10+3.53 EUR
100+2.46 EUR
500+2 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
FDMS86252 fdms86252-d.pdf
FDMS86252
Hersteller: onsemi
Description: MOSFET N-CH 150V 4.6A/16A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 51mOhm @ 4.6A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 905 pF @ 75 V
auf Bestellung 2933 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.16 EUR
10+3.36 EUR
100+2.33 EUR
500+1.89 EUR
1000+1.85 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
FDS86106 fds86106-d.pdf
FDS86106
Hersteller: onsemi
Description: MOSFET N-CH 100V 3.4A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V
Power Dissipation (Max): 5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 208 pF @ 50 V
auf Bestellung 33396 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.15 EUR
10+2.01 EUR
100+1.35 EUR
500+1.07 EUR
1000+0.98 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
FDS86141 fds86141-d.pdf
FDS86141
Hersteller: onsemi
Description: MOSFET N-CH 100V 7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 934 pF @ 50 V
auf Bestellung 5025 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.63 EUR
10+3 EUR
100+2.08 EUR
500+1.74 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
FDS86240 fds86240-d.pdf
FDS86240
Hersteller: onsemi
Description: MOSFET N-CH 150V 7.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Ta)
Rds On (Max) @ Id, Vgs: 19.8mOhm @ 7.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2570 pF @ 75 V
auf Bestellung 14802 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.75 EUR
10+3.7 EUR
100+2.69 EUR
500+2.31 EUR
1000+2.2 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
FDS86242 fds86242-d.pdf
FDS86242
Hersteller: onsemi
Description: MOSFET N-CH 150V 4.1A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 67mOhm @ 4.1A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 760 pF @ 75 V
auf Bestellung 4767 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.08 EUR
14+1.31 EUR
100+0.86 EUR
500+0.67 EUR
1000+0.61 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
FDS89161 fds89161-d.pdf
FDS89161
Hersteller: onsemi
Description: MOSFET 2N-CH 100V 2.7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 2.7A
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 50V
Rds On (Max) @ Id, Vgs: 105mOhm @ 2.7A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.1nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 5850 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.85 EUR
11+1.65 EUR
100+1.33 EUR
500+1.24 EUR
1000+1.21 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
CAT3661HV3-GT2
CAT3661HV3-GT2
Hersteller: onsemi
Description: IC LED DRIVER RGLTR 5MA 16TQFN
Packaging: Tape & Reel (TR)
Package / Case: 16-WFQFN Exposed Pad
Voltage - Output: 7V
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 100kHz, 130kHz
Type: DC DC Regulator
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 5mA
Internal Switch(s): Yes
Topology: Switched Capacitor (Charge Pump)
Supplier Device Package: 16-TQFN (3x3)
Voltage - Supply (Min): 2V
Voltage - Supply (Max): 5.5V
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
LMV982MUTAG lmv981-d.pdf
LMV982MUTAG
Hersteller: onsemi
Description: IC OPAMP GP 2 CIRCUIT 10UQFN
Packaging: Tape & Reel (TR)
Package / Case: 10-UFQFN
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Current - Supply: 75µA (x2 Channels)
Slew Rate: 0.48V/µs
Gain Bandwidth Product: 1.5 MHz
Current - Input Bias: 1 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 10-UQFN (1.4x1.8)
Part Status: Active
Number of Circuits: 2
Current - Output / Channel: 65 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 233 436 437 438 439 440 441 442 443 444 445 446 466 699 932 1165 1398 1631 1864 2097 2330 2338  [ Nächste Seite >> ]