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FAN7621BSJX FAN7621BSJX onsemi ONSM-S-A0003584778-1.pdf?t.download=true&u=5oefqw Description: IC OFFLINE SW HALF-BRDG 16SOP
Power (Watts): 192 W
Part Status: Active
Control Features: Frequency Control
Voltage - Start Up: 12.5 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: 16-SOP
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Topology: Half-Bridge
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: Up to 300kHz
Duty Cycle: 50%
Operating Temperature: -40°C ~ 130°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FAN7621SJ FAN7621SJ onsemi ONSM-S-A0003584861-1.pdf?t.download=true&u=5oefqw Description: IC OFFLINE SW HALF-BRDG 16SOP
Power (Watts): 200 W
Part Status: Obsolete
Control Features: Frequency Control
Voltage - Start Up: 14.5 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: 16-SOP
Voltage - Supply (Vcc/Vdd): 11.3V ~ 25V
Topology: Half-Bridge
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: Up to 300kHz
Duty Cycle: 50%
Operating Temperature: -40°C ~ 130°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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FAN7621SSJ FAN7621SSJ onsemi fan7621s-d.pdf Description: IC OFFLINE SW HALF-BRDG 16SOP
Part Status: Obsolete
Control Features: Frequency Control
Voltage - Start Up: 12.5 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: 16-SOP
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Topology: Half-Bridge
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: Up to 300kHz
Duty Cycle: 50%
Operating Temperature: -40°C ~ 130°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Packaging: Tube
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FAN7621SSJX FAN7621SSJX onsemi fan7621s-d.pdf Description: IC OFFLINE SW HALF-BRDG 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: 16-SOP
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Part Status: Last Time Buy
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FAN7710VLN FAN7710VLN onsemi FAN7710V,VL.pdf Description: IC CFL/TL DRIVER 57.3KHZ 8DIP
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FAN7711SM FAN7711SM onsemi FAN7711.pdf Description: IC BALLAST CNTRL 57.3KHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 48.7kHz ~ 57.3kHz
Type: Ballast Controller
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 12.4V ~ 15.2V
Supplier Device Package: 8-SOIC
Dimming: No
Current - Supply: 3.2 mA
Produkt ist nicht verfügbar
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FAN7711SN FAN7711SN onsemi FAN7711.pdf Description: IC BALLAST CNTRL 57.3KHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Frequency: 48.7kHz ~ 57.3kHz
Type: Ballast Controller
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 12.4V ~ 15.2V
Supplier Device Package: 8-DIP
Dimming: No
Current - Supply: 3.2 mA
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FAN7930MX FAN7930MX onsemi fan7930.pdf Description: IC PFC CTRLR CRM 350KHZ 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 13V ~ 20V
Frequency - Switching: 250kHz ~ 350kHz
Mode: Critical Conduction (CRM)
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Current - Startup: 120 µA
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FAN9612MX FAN9612MX onsemi FAN9612.pdf Description: IC PFC CTRLR BCM 525KHZ 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 9V ~ 18V
Frequency - Switching: 16.5kHz ~ 525kHz
Mode: Boundary Conduction (BCM)
Supplier Device Package: 16-SOIC
Current - Startup: 80 µA
Produkt ist nicht verfügbar
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FCH47N60F-F133 FCH47N60F-F133 onsemi FCH47N60F-D.PDF Description: MOSFET N-CH 600V 47A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
auf Bestellung 706 Stücke:
Lieferzeit 10-14 Tag (e)
1+27.08 EUR
30+16.56 EUR
120+14.27 EUR
510+14.02 EUR
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FDC5661N-F085 FDC5661N-F085 onsemi FDC5661N_F085-D.PDF Description: MOSFET N-CH 60V 4.3A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 4.3A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 25 V
Qualification: AEC-Q101
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FDD16AN08A0-F085 FDD16AN08A0-F085 onsemi fdd16an08-f085-d.pdf Description: MOSFET N-CH 75V 9A/50A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 50A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1874 pF @ 25 V
Qualification: AEC-Q101
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FDD3N50NZTM FDD3N50NZTM onsemi fdd3n50nz-d.pdf Description: MOSFET N-CH 500V 2.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.25A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
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FDD4685TF_SB82135 FDD4685TF_SB82135 onsemi Description: MOSFET P-CH 40V 8.4A/32A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 27mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 32A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FDD5N50NZFTM FDD5N50NZFTM onsemi ONSM-S-A0003590038-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 500V 3.7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 1.75Ohm @ 1.85A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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FDD5N50NZTM FDD5N50NZTM onsemi FDD5N50NZ-D.pdf Description: MOSFET N-CH 500V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
auf Bestellung 2500 Stücke:
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FDD8426H FDD8426H onsemi FDD8426H.pdf Description: MOSFET N/P-CH 40V 12A/10A DPAK
Part Status: Obsolete
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Rds On (Max) @ Id, Vgs: 12mOhm @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2735pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 12A, 10A
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.3W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Packaging: Tape & Reel (TR)
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FDG1024NZ FDG1024NZ onsemi FDG1024NZ-D.PDF Description: MOSFET 2N-CH 20V 1.2A SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.2A
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 10V
Rds On (Max) @ Id, Vgs: 175mOhm @ 1.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-88 (SC-70-6)
Part Status: Active
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FDG6301N-F085 FDG6301N-F085 onsemi fdg6301n_f085-d.pdf Description: MOSFET 2N-CH 25V 0.22A SC88
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SC-88 (SC-70-6)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4Ohm @ 220mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 220mA
Drain to Source Voltage (Vdss): 25V
Power - Max: 300mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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FDH45N50F-F133 FDH45N50F-F133 onsemi FDH45N50F-D.PDF Description: MOSFET N-CH 500V 45A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 22.5A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6630 pF @ 25 V
auf Bestellung 1547 Stücke:
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2+14.33 EUR
30+8.29 EUR
120+6.97 EUR
510+6.09 EUR
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FDH50N50-F133 FDH50N50-F133 onsemi FDH50N50-D.PDF Description: MOSFET N-CH 500V 48A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 24A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 25 V
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FDI150N10 FDI150N10 onsemi fdi150n10-d.pdf Description: MOSFET N-CH 100V 57A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 49A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4760 pF @ 25 V
auf Bestellung 643 Stücke:
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4+6.47 EUR
50+3.26 EUR
100+2.95 EUR
500+2.42 EUR
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FDMC6679AZ FDMC6679AZ onsemi fdmc6679az-d.pdf Description: MOSFET P-CH 30V 11.5A/20A 8MLP
Input Capacitance (Ciss) (Max) @ Vds: 3970 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: 8-MLP (3.3x3.3)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 20A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
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3000+1.08 EUR
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FDMC7660 FDMC7660 onsemi fdmc7660-d.pdf Description: MOSFET N-CH 30V 20A/40A POWER33
Input Capacitance (Ciss) (Max) @ Vds: 4830 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: Power33
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FDMC7660S FDMC7660S onsemi fdmc7660s-d.pdf Description: MOSFET N-CH 30V 20A/40A POWER33
Input Capacitance (Ciss) (Max) @ Vds: 4325 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: Power33
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FDMC7672S FDMC7672S onsemi fdmc7672s-d.pdf Description: MOSFET N-CH 30V 14.8A/18A 8MLP
Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-MLP (3.3x3.3)
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 2.3W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 14.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta), 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
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FDMC7680 FDMC7680 onsemi fdmc7680-d.pdf Description: MOSFET N-CH 30V 14.8A 8MLP
Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2855 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-MLP (3.3x3.3)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 31W (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 14.8A, 10V
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FDMC7692 FDMC7692 onsemi fdmc7692-d.pdf Description: MOSFET N-CH 30V 13.3A/16A 8MLP
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-MLP (3.3x3.3)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 29W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta), 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
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FDMC7692S FDMC7692S onsemi fdmc7692s-d.pdf Description: MOSFET N-CH 30V 12.5A/18A 8MLP
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FDMC86102 FDMC86102 onsemi fdmc86102-d.pdf Description: MOSFET N-CH 100V 7A/20A POWER33
Input Capacitance (Ciss) (Max) @ Vds: 965 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: Power33
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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FDMC8882 FDMC8882 onsemi fdmc8882-d.pdf Description: MOSFET N-CH 30V 10.5A/16A 8MLP
Input Capacitance (Ciss) (Max) @ Vds: 945 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-MLP (3.3x3.3)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 18W (Tc)
Rds On (Max) @ Id, Vgs: 14.3mOhm @ 10.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
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FDME1023PZT FDME1023PZT onsemi fdme1023pzt-d.pdf Description: MOSFET 2P-CH 20V 2.6A 6MICROFET
Supplier Device Package: 6-MicroFET (1.6x1.6)
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
Rds On (Max) @ Id, Vgs: 142mOhm @ 2.3A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Drain to Source Voltage (Vdss): 20V
Power - Max: 600mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Packaging: Tape & Reel (TR)
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FDME1024NZT FDME1024NZT onsemi fdme1024nzt-d.pdf Description: MOSFET 2N-CH 20V 3.8A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 600mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
Rds On (Max) @ Id, Vgs: 66mOhm @ 3.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-MicroFET (1.6x1.6)
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FDME1034CZT FDME1034CZT onsemi fdme1034czt-d.pdf Description: MOSFET N/P-CH 20V 3.8A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 600mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.8A, 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
Rds On (Max) @ Id, Vgs: 66mOhm @ 3.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-MicroFET (1.6x1.6)
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FDMS7650 FDMS7650 onsemi fdms7650-d.pdf Description: MOSFET N-CH 30V 36A/100A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 14965 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 209 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 0.99mOhm @ 36A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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FDMS7656AS FDMS7656AS onsemi ONSM-S-A0003585015-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 30V 31A/49A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 8705 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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FDMS7658AS FDMS7658AS onsemi fdms7658as-d.pdf Description: MOSFET N-CH 30V 29A/70A 8PQFN
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FDMS7660AS FDMS7660AS onsemi fdms7660as-d.pdf Description: MOSFET N-CH 30V 26A/42A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 15 V
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FDMS7670AS FDMS7670AS onsemi fdms7670as-d.pdf Description: MOSFET N-CH 30V 22A/42A 8PQFN
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FDP047AN08A0-F102 FDP047AN08A0-F102 onsemi FDH047AN08A0-D.PDF Description: MOSFET N-CH 75V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Power Dissipation (Max): 310W (Tc)
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
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FDP054N10 FDP054N10 onsemi fdp054n10-d.pdf Description: MOSFET N-CH 100V 120A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 13280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 203 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 263W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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FDPF12N60NZ FDPF12N60NZ onsemi FDPF12N60NZ-D.PDF Description: MOSFET N-CH 600V 12A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1676 pF @ 25 V
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FDPF17N60NT FDPF17N60NT onsemi fdpf17n60nt-d.pdf Description: MOSFET N-CH 600V 17A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 8.5A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3040 pF @ 25 V
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FDPF18N20FT FDPF18N20FT onsemi fdpf18n20ft-d.pdf Description: MOSFET N-CH 200V 18A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 9A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V
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FDPF8N60ZUT FDPF8N60ZUT onsemi fdpf8n60zut-d.pdf Description: MOSFET N-CH 600V 6.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 3.25A, 10V
Power Dissipation (Max): 34.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1265 pF @ 25 V
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FDS2672-F085 FDS2672-F085 onsemi fds2672_f085-d.pdf Description: MOSFET N-CH 200V 3.9A 8SOIC
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2535 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Grade: Automotive
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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FDS4141-F085 FDS4141-F085 onsemi fds4141_f085-d.pdf Description: MOSFET P-CH 40V 10.8A 8SOIC
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2005 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Qualification: AEC-Q101
Grade: Automotive
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FDS4435BZ-F085 FDS4435BZ-F085 onsemi fds4435bz_f085-d.pdf Description: MOSFET P-CH 30V 8.8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.8A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1845 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
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FDS4465-F085 FDS4465-F085 onsemi fds4465_f085-d.pdf Description: MOSFET P-CH 20V 13.5A 8SOIC
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 8237 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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FDS6673BZ-F085 FDS6673BZ-F085 onsemi FDS6673BZ-F085.pdf Description: MOSFET P-CH 30V 14.5A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
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FDT3N40TF FDT3N40TF onsemi fdt3n40-d.pdf Description: MOSFET N-CH 400V 2A SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SOT-223-4
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2W (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
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FDY302NZ FDY302NZ onsemi fdy302nz-d.pdf Description: MOSFET N-CH 20V 600MA SC89-3
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Part Status: Active
Supplier Device Package: SC-89-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 600mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Tape & Reel (TR)
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
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FFA60UA60DN FFA60UA60DN onsemi ffa60ua60dn-d.pdf Description: DIODE ARRAY GP 600V 30A TO3PN
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-3PN
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
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FFAF60UA60DN FFAF60UA60DN onsemi ffaf60ua60dn-d.pdf Description: DIODE ARRAY GP 600V 30A TO-3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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FFPF30UA60S FFPF30UA60S onsemi ffpf30ua60s-d.pdf Description: DIODE GEN PURP 600V 30A TO220F
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Last Time Buy
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220F-2L
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
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FIN210ACMLX FIN210ACMLX onsemi FIN210AC.pdf Description: IC SER/DES 10BIT 32-MLP
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FJD3305H1TM FJD3305H1TM onsemi fjd3305h1-d.pdf Description: TRANS NPN 400V 4A TO252AA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 4A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Power - Max: 1.1 W
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TO-252AA
Frequency - Transition: 4MHz
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5000+0.56 EUR
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FJV42MTF FJV42MTF onsemi fjv42mtf-d.pdf Description: TRANS NPN 350V 0.5A SOT-23-3
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SOT-23-3
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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6000+0.092 EUR
9000+0.086 EUR
15000+0.08 EUR
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FMS6144AMTC14X FMS6144AMTC14X onsemi fms6144a-d.pdf Description: IC VIDEO FILTER 14TSSOP
Supplier Device Package: 14-TSSOP
Applications: Consumer Video
Voltage - Supply: 3.14V ~ 5.25V
Function: Driver
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FPF1038UCX FPF1038UCX onsemi FAIRS46408-1.pdf?t.download=true&u=5oefqw Description: IC PWR SWITCH P-CHAN 1:1 6WLCSP
auf Bestellung 21000 Stücke:
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3000+0.75 EUR
6000+0.7 EUR
15000+0.68 EUR
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FAN7621BSJX ONSM-S-A0003584778-1.pdf?t.download=true&u=5oefqw
FAN7621BSJX
Hersteller: onsemi
Description: IC OFFLINE SW HALF-BRDG 16SOP
Power (Watts): 192 W
Part Status: Active
Control Features: Frequency Control
Voltage - Start Up: 12.5 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: 16-SOP
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Topology: Half-Bridge
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: Up to 300kHz
Duty Cycle: 50%
Operating Temperature: -40°C ~ 130°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Packaging: Tape & Reel (TR)
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FAN7621SJ ONSM-S-A0003584861-1.pdf?t.download=true&u=5oefqw
FAN7621SJ
Hersteller: onsemi
Description: IC OFFLINE SW HALF-BRDG 16SOP
Power (Watts): 200 W
Part Status: Obsolete
Control Features: Frequency Control
Voltage - Start Up: 14.5 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: 16-SOP
Voltage - Supply (Vcc/Vdd): 11.3V ~ 25V
Topology: Half-Bridge
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: Up to 300kHz
Duty Cycle: 50%
Operating Temperature: -40°C ~ 130°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Packaging: Tube
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FAN7621SSJ fan7621s-d.pdf
FAN7621SSJ
Hersteller: onsemi
Description: IC OFFLINE SW HALF-BRDG 16SOP
Part Status: Obsolete
Control Features: Frequency Control
Voltage - Start Up: 12.5 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Supplier Device Package: 16-SOP
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Topology: Half-Bridge
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: Up to 300kHz
Duty Cycle: 50%
Operating Temperature: -40°C ~ 130°C (TJ)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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FAN7621SSJX fan7621s-d.pdf
FAN7621SSJX
Hersteller: onsemi
Description: IC OFFLINE SW HALF-BRDG 16SOP
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.209", 5.30mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 130°C (TJ)
Duty Cycle: 50%
Frequency - Switching: Up to 300kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Half-Bridge
Voltage - Supply (Vcc/Vdd): 10V ~ 25V
Supplier Device Package: 16-SOP
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 12.5 V
Control Features: Frequency Control
Part Status: Last Time Buy
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FAN7710VLN FAN7710V,VL.pdf
FAN7710VLN
Hersteller: onsemi
Description: IC CFL/TL DRIVER 57.3KHZ 8DIP
Produkt ist nicht verfügbar
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FAN7711SM FAN7711.pdf
FAN7711SM
Hersteller: onsemi
Description: IC BALLAST CNTRL 57.3KHZ 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Frequency: 48.7kHz ~ 57.3kHz
Type: Ballast Controller
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 12.4V ~ 15.2V
Supplier Device Package: 8-SOIC
Dimming: No
Current - Supply: 3.2 mA
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FAN7711SN FAN7711.pdf
FAN7711SN
Hersteller: onsemi
Description: IC BALLAST CNTRL 57.3KHZ 8DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Mounting Type: Through Hole
Frequency: 48.7kHz ~ 57.3kHz
Type: Ballast Controller
Operating Temperature: -25°C ~ 125°C
Voltage - Supply: 12.4V ~ 15.2V
Supplier Device Package: 8-DIP
Dimming: No
Current - Supply: 3.2 mA
Produkt ist nicht verfügbar
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FAN7930MX fan7930.pdf
FAN7930MX
Hersteller: onsemi
Description: IC PFC CTRLR CRM 350KHZ 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 13V ~ 20V
Frequency - Switching: 250kHz ~ 350kHz
Mode: Critical Conduction (CRM)
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Current - Startup: 120 µA
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FAN9612MX FAN9612.pdf
FAN9612MX
Hersteller: onsemi
Description: IC PFC CTRLR BCM 525KHZ 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 9V ~ 18V
Frequency - Switching: 16.5kHz ~ 525kHz
Mode: Boundary Conduction (BCM)
Supplier Device Package: 16-SOIC
Current - Startup: 80 µA
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FCH47N60F-F133 FCH47N60F-D.PDF
FCH47N60F-F133
Hersteller: onsemi
Description: MOSFET N-CH 600V 47A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 23.5A, 10V
Power Dissipation (Max): 417W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8000 pF @ 25 V
auf Bestellung 706 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
1+27.08 EUR
30+16.56 EUR
120+14.27 EUR
510+14.02 EUR
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FDC5661N-F085 FDC5661N_F085-D.PDF
FDC5661N-F085
Hersteller: onsemi
Description: MOSFET N-CH 60V 4.3A SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 4.3A, 10V
Power Dissipation (Max): 1.6W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SuperSOT™-6
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FDD16AN08A0-F085 fdd16an08-f085-d.pdf
FDD16AN08A0-F085
Hersteller: onsemi
Description: MOSFET N-CH 75V 9A/50A TO252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 50A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1874 pF @ 25 V
Qualification: AEC-Q101
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FDD3N50NZTM fdd3n50nz-d.pdf
FDD3N50NZTM
Hersteller: onsemi
Description: MOSFET N-CH 500V 2.5A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.25A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
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FDD4685TF_SB82135
FDD4685TF_SB82135
Hersteller: onsemi
Description: MOSFET P-CH 40V 8.4A/32A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 2380 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 27 nC @ 5 V
Drain to Source Voltage (Vdss): 40 V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3V @ 250µA
Rds On (Max) @ Id, Vgs: 27mOhm @ 8.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.4A (Ta), 32A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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FDD5N50NZFTM ONSM-S-A0003590038-1.pdf?t.download=true&u=5oefqw
FDD5N50NZFTM
Hersteller: onsemi
Description: MOSFET N-CH 500V 3.7A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 62.5W (Tc)
Rds On (Max) @ Id, Vgs: 1.75Ohm @ 1.85A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FDD5N50NZTM FDD5N50NZ-D.pdf
FDD5N50NZTM
Hersteller: onsemi
Description: MOSFET N-CH 500V 4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.81 EUR
Mindestbestellmenge: 2500 Stücke
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FDD8426H FDD8426H.pdf
FDD8426H
Hersteller: onsemi
Description: MOSFET N/P-CH 40V 12A/10A DPAK
Part Status: Obsolete
Supplier Device Package: TO-252 (DPAK)
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 53nC @ 10V
Rds On (Max) @ Id, Vgs: 12mOhm @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2735pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 12A, 10A
Drain to Source Voltage (Vdss): 40V
Power - Max: 1.3W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: N and P-Channel
Mounting Type: Surface Mount
Package / Case: TO-252-5, DPak (4 Leads + Tab), TO-252AD
Packaging: Tape & Reel (TR)
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FDG1024NZ FDG1024NZ-D.PDF
FDG1024NZ
Hersteller: onsemi
Description: MOSFET 2N-CH 20V 1.2A SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.2A
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 10V
Rds On (Max) @ Id, Vgs: 175mOhm @ 1.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-88 (SC-70-6)
Part Status: Active
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FDG6301N-F085 fdg6301n_f085-d.pdf
FDG6301N-F085
Hersteller: onsemi
Description: MOSFET 2N-CH 25V 0.22A SC88
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SC-88 (SC-70-6)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 0.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 4Ohm @ 220mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 9.5pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 220mA
Drain to Source Voltage (Vdss): 25V
Power - Max: 300mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FDH45N50F-F133 FDH45N50F-D.PDF
FDH45N50F-F133
Hersteller: onsemi
Description: MOSFET N-CH 500V 45A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 45A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 22.5A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6630 pF @ 25 V
auf Bestellung 1547 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+14.33 EUR
30+8.29 EUR
120+6.97 EUR
510+6.09 EUR
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FDH50N50-F133 FDH50N50-D.PDF
FDH50N50-F133
Hersteller: onsemi
Description: MOSFET N-CH 500V 48A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 48A (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 24A, 10V
Power Dissipation (Max): 625W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 137 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6460 pF @ 25 V
Produkt ist nicht verfügbar
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FDI150N10 fdi150n10-d.pdf
FDI150N10
Hersteller: onsemi
Description: MOSFET N-CH 100V 57A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 57A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 49A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 69 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4760 pF @ 25 V
auf Bestellung 643 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.47 EUR
50+3.26 EUR
100+2.95 EUR
500+2.42 EUR
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FDMC6679AZ fdmc6679az-d.pdf
FDMC6679AZ
Hersteller: onsemi
Description: MOSFET P-CH 30V 11.5A/20A 8MLP
Input Capacitance (Ciss) (Max) @ Vds: 3970 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 91 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Not For New Designs
Supplier Device Package: 8-MLP (3.3x3.3)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 11.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.5A (Ta), 20A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+1.08 EUR
Mindestbestellmenge: 3000 Stücke
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FDMC7660 fdmc7660-d.pdf
FDMC7660
Hersteller: onsemi
Description: MOSFET N-CH 30V 20A/40A POWER33
Input Capacitance (Ciss) (Max) @ Vds: 4830 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: Power33
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FDMC7660S fdmc7660s-d.pdf
FDMC7660S
Hersteller: onsemi
Description: MOSFET N-CH 30V 20A/40A POWER33
Input Capacitance (Ciss) (Max) @ Vds: 4325 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: Power33
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FDMC7672S fdmc7672s-d.pdf
FDMC7672S
Hersteller: onsemi
Description: MOSFET N-CH 30V 14.8A/18A 8MLP
Input Capacitance (Ciss) (Max) @ Vds: 2520 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-MLP (3.3x3.3)
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 2.3W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 14.8A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta), 18A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.84 EUR
Mindestbestellmenge: 3000 Stücke
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FDMC7680 fdmc7680-d.pdf
FDMC7680
Hersteller: onsemi
Description: MOSFET N-CH 30V 14.8A 8MLP
Current - Continuous Drain (Id) @ 25°C: 14.8A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2855 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-MLP (3.3x3.3)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 31W (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 14.8A, 10V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+1.14 EUR
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FDMC7692 fdmc7692-d.pdf
FDMC7692
Hersteller: onsemi
Description: MOSFET N-CH 30V 13.3A/16A 8MLP
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-MLP (3.3x3.3)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 29W (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta), 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.73 EUR
Mindestbestellmenge: 3000 Stücke
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FDMC7692S fdmc7692s-d.pdf
FDMC7692S
Hersteller: onsemi
Description: MOSFET N-CH 30V 12.5A/18A 8MLP
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.54 EUR
6000+0.5 EUR
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FDMC86102 fdmc86102-d.pdf
FDMC86102
Hersteller: onsemi
Description: MOSFET N-CH 100V 7A/20A POWER33
Input Capacitance (Ciss) (Max) @ Vds: 965 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: Power33
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 20A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FDMC8882 fdmc8882-d.pdf
FDMC8882
Hersteller: onsemi
Description: MOSFET N-CH 30V 10.5A/16A 8MLP
Input Capacitance (Ciss) (Max) @ Vds: 945 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-MLP (3.3x3.3)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 18W (Tc)
Rds On (Max) @ Id, Vgs: 14.3mOhm @ 10.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 16A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.7 EUR
6000+0.64 EUR
9000+0.62 EUR
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FDME1023PZT fdme1023pzt-d.pdf
FDME1023PZT
Hersteller: onsemi
Description: MOSFET 2P-CH 20V 2.6A 6MICROFET
Supplier Device Package: 6-MicroFET (1.6x1.6)
Vgs(th) (Max) @ Id: 1V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 7.7nC @ 4.5V
Rds On (Max) @ Id, Vgs: 142mOhm @ 2.3A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 405pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A
Drain to Source Voltage (Vdss): 20V
Power - Max: 600mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 P-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 355000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5000+0.71 EUR
10000+0.69 EUR
25000+0.67 EUR
Mindestbestellmenge: 5000 Stücke
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FDME1024NZT fdme1024nzt-d.pdf
FDME1024NZT
Hersteller: onsemi
Description: MOSFET 2N-CH 20V 3.8A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 600mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.8A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
Rds On (Max) @ Id, Vgs: 66mOhm @ 3.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-MicroFET (1.6x1.6)
Produkt ist nicht verfügbar
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FDME1034CZT fdme1034czt-d.pdf
FDME1034CZT
Hersteller: onsemi
Description: MOSFET N/P-CH 20V 3.8A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 600mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.8A, 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
Rds On (Max) @ Id, Vgs: 66mOhm @ 3.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-MicroFET (1.6x1.6)
Produkt ist nicht verfügbar
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FDMS7650 fdms7650-d.pdf
FDMS7650
Hersteller: onsemi
Description: MOSFET N-CH 30V 36A/100A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 14965 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 209 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 0.99mOhm @ 36A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+2.05 EUR
Mindestbestellmenge: 3000 Stücke
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FDMS7656AS ONSM-S-A0003585015-1.pdf?t.download=true&u=5oefqw
FDMS7656AS
Hersteller: onsemi
Description: MOSFET N-CH 30V 31A/49A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 8705 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FDMS7658AS fdms7658as-d.pdf
FDMS7658AS
Hersteller: onsemi
Description: MOSFET N-CH 30V 29A/70A 8PQFN
Produkt ist nicht verfügbar
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FDMS7660AS fdms7660as-d.pdf
FDMS7660AS
Hersteller: onsemi
Description: MOSFET N-CH 30V 26A/42A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+1.18 EUR
Mindestbestellmenge: 3000 Stücke
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FDMS7670AS fdms7670as-d.pdf
FDMS7670AS
Hersteller: onsemi
Description: MOSFET N-CH 30V 22A/42A 8PQFN
Produkt ist nicht verfügbar
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FDP047AN08A0-F102 FDH047AN08A0-D.PDF
FDP047AN08A0-F102
Hersteller: onsemi
Description: MOSFET N-CH 75V 80A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Power Dissipation (Max): 310W (Tc)
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Produkt ist nicht verfügbar
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FDP054N10 fdp054n10-d.pdf
FDP054N10
Hersteller: onsemi
Description: MOSFET N-CH 100V 120A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 13280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 203 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 263W (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 640 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+9.45 EUR
50+5.06 EUR
100+4.33 EUR
Mindestbestellmenge: 3 Stücke
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FDPF12N60NZ FDPF12N60NZ-D.PDF
FDPF12N60NZ
Hersteller: onsemi
Description: MOSFET N-CH 600V 12A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 650mOhm @ 6A, 10V
Power Dissipation (Max): 39W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1676 pF @ 25 V
auf Bestellung 837 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.12 EUR
50+3.06 EUR
100+2.77 EUR
500+2.25 EUR
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FDPF17N60NT fdpf17n60nt-d.pdf
FDPF17N60NT
Hersteller: onsemi
Description: MOSFET N-CH 600V 17A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 340mOhm @ 8.5A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3040 pF @ 25 V
auf Bestellung 2598 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.35 EUR
50+4.3 EUR
100+3.9 EUR
500+3.22 EUR
1000+3 EUR
2000+2.95 EUR
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FDPF18N20FT fdpf18n20ft-d.pdf
FDPF18N20FT
Hersteller: onsemi
Description: MOSFET N-CH 200V 18A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 9A, 10V
Power Dissipation (Max): 41W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 25 V
auf Bestellung 402 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
6+4.16 EUR
50+2.02 EUR
100+1.82 EUR
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FDPF8N60ZUT fdpf8n60zut-d.pdf
FDPF8N60ZUT
Hersteller: onsemi
Description: MOSFET N-CH 600V 6.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 3.25A, 10V
Power Dissipation (Max): 34.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1265 pF @ 25 V
Produkt ist nicht verfügbar
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FDS2672-F085 fds2672_f085-d.pdf
FDS2672-F085
Hersteller: onsemi
Description: MOSFET N-CH 200V 3.9A 8SOIC
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 2535 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Grade: Automotive
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 3.9A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FDS4141-F085 fds4141_f085-d.pdf
FDS4141-F085
Hersteller: onsemi
Description: MOSFET P-CH 40V 10.8A 8SOIC
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 2005 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 13mOhm @ 10.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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FDS4435BZ-F085 fds4435bz_f085-d.pdf
FDS4435BZ-F085
Hersteller: onsemi
Description: MOSFET P-CH 30V 8.8A 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 8.8A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 8.8A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1845 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FDS4465-F085 fds4465_f085-d.pdf
FDS4465-F085
Hersteller: onsemi
Description: MOSFET P-CH 20V 13.5A 8SOIC
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 8237 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FDS6673BZ-F085 FDS6673BZ-F085.pdf
FDS6673BZ-F085
Hersteller: onsemi
Description: MOSFET P-CH 30V 14.5A 8SOIC
Input Capacitance (Ciss) (Max) @ Vds: 4700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 124 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 7.8mOhm @ 14.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
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FDT3N40TF fdt3n40-d.pdf
FDT3N40TF
Hersteller: onsemi
Description: MOSFET N-CH 400V 2A SOT223-4
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: SOT-223-4
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2W (Tc)
Rds On (Max) @ Id, Vgs: 3.4Ohm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 2A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FDY302NZ fdy302nz-d.pdf
FDY302NZ
Hersteller: onsemi
Description: MOSFET N-CH 20V 600MA SC89-3
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Part Status: Active
Supplier Device Package: SC-89-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 625mW (Ta)
Rds On (Max) @ Id, Vgs: 300mOhm @ 600mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Tape & Reel (TR)
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.18 EUR
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FFA60UA60DN ffa60ua60dn-d.pdf
FFA60UA60DN
Hersteller: onsemi
Description: DIODE ARRAY GP 600V 30A TO3PN
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-3PN
Current - Average Rectified (Io) (per Diode): 30A
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Produkt ist nicht verfügbar
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FFAF60UA60DN ffaf60ua60dn-d.pdf
FFAF60UA60DN
Hersteller: onsemi
Description: DIODE ARRAY GP 600V 30A TO-3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 90 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 30A
Supplier Device Package: TO-3PF
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 30 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Produkt ist nicht verfügbar
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FFPF30UA60S ffpf30ua60s-d.pdf
FFPF30UA60S
Hersteller: onsemi
Description: DIODE GEN PURP 600V 30A TO220F
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 30 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Last Time Buy
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: TO-220F-2L
Current - Average Rectified (Io): 30A
Technology: Standard
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2 Full Pack
Packaging: Tube
Produkt ist nicht verfügbar
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FIN210ACMLX FIN210AC.pdf
FIN210ACMLX
Hersteller: onsemi
Description: IC SER/DES 10BIT 32-MLP
Produkt ist nicht verfügbar
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FJD3305H1TM fjd3305h1-d.pdf
FJD3305H1TM
Hersteller: onsemi
Description: TRANS NPN 400V 4A TO252AA
DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 2A, 5V
Current - Collector Cutoff (Max): 1µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 1A, 4A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Power - Max: 1.1 W
Voltage - Collector Emitter Breakdown (Max): 400 V
Current - Collector (Ic) (Max): 4 A
Supplier Device Package: TO-252AA
Frequency - Transition: 4MHz
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.6 EUR
5000+0.56 EUR
12500+0.54 EUR
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FJV42MTF fjv42mtf-d.pdf
FJV42MTF
Hersteller: onsemi
Description: TRANS NPN 350V 0.5A SOT-23-3
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 500 mA
Supplier Device Package: SOT-23-3
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.1 EUR
6000+0.092 EUR
9000+0.086 EUR
15000+0.08 EUR
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FMS6144AMTC14X fms6144a-d.pdf
FMS6144AMTC14X
Hersteller: onsemi
Description: IC VIDEO FILTER 14TSSOP
Supplier Device Package: 14-TSSOP
Applications: Consumer Video
Voltage - Supply: 3.14V ~ 5.25V
Function: Driver
Mounting Type: Surface Mount
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FPF1038UCX FAIRS46408-1.pdf?t.download=true&u=5oefqw
FPF1038UCX
Hersteller: onsemi
Description: IC PWR SWITCH P-CHAN 1:1 6WLCSP
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+0.75 EUR
6000+0.7 EUR
15000+0.68 EUR
Mindestbestellmenge: 3000 Stücke
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