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PDZ6.8B-AU_R1_000A1 PanJit Semiconductor PDZ4.7B-AU_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 6.8V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
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PDZ6.8B_R1_00001 PanJit Semiconductor PDZ4.7B_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 6.8V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
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PDZ7.5B-AU_R1_000A1 PanJit Semiconductor PDZ4.7B-AU_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 7.5V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
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PDZ7.5B_R1_00001 PanJit Semiconductor PDZ4.7B_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 7.5V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
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PDZ8.2B-AU_R1_000A1 PanJit Semiconductor PDZ4.7B-AU_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 8.2V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
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PDZ8.2B_R1_00001 PanJit Semiconductor PDZ4.7B_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 8.2V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
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PDZ9.1B-AU_R1_000A1 PanJit Semiconductor PDZ4.7B-AU_SERIES.pdf Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 9.1V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
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PDZ9.1B_R1_00001 PanJit Semiconductor PDZ4.7B_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 9.1V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
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PE1605C4A6-AU_R1_000A1 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 1A; unidirectional; SOT23-6L; Ch: 4
Type of diode: TVS
Breakdown voltage: 6V
Max. forward impulse current: 1A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23-6L
Max. off-state voltage: 5.5V
Leakage current: 1µA
Number of channels: 4
Capacitance: 0.6pF
Application: automotive industry
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PE1605C4A6_R1_00001 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 1A; unidirectional; SOT23-6L; Ch: 4
Type of diode: TVS
Breakdown voltage: 6V
Max. forward impulse current: 1A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23-6L
Max. off-state voltage: 5.5V
Leakage current: 1µA
Number of channels: 4
Capacitance: 0.6pF
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PE1605C4A6_S1_00001 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 1A; unidirectional; SOT23-6L; Ch: 4
Type of diode: TVS
Breakdown voltage: 6V
Max. forward impulse current: 1A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23-6L
Max. off-state voltage: 5.5V
Leakage current: 1µA
Number of channels: 4
Capacitance: 0.6pF
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PE1605C4E6-AU_R1_000A1 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 4A; unidirectional; SOT563; Ch: 4
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Max. forward impulse current: 4A
Semiconductor structure: unidirectional
Mounting: SMD
Leakage current: 1µA
Capacitance: 0.6pF
Case: SOT563
Number of channels: 4
Application: automotive industry
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PE1605C4E6-AU_S1_000A1 PanJit Semiconductor PE1605C4E6-AU.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 4A; unidirectional; SOT563; Ch: 4
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Max. forward impulse current: 4A
Semiconductor structure: unidirectional
Mounting: SMD
Leakage current: 1µA
Capacitance: 0.6pF
Case: SOT563
Number of channels: 4
Application: automotive industry
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PE1605C4E6_R1_00001 PanJit Semiconductor PE1605C4E6.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 4A; unidirectional; SOT563; Ch: 4
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Max. forward impulse current: 4A
Semiconductor structure: unidirectional
Mounting: SMD
Leakage current: 1µA
Capacitance: 0.6pF
Case: SOT563
Number of channels: 4
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PE1805C4A6_R1_00001 PE1805C4A6_R1_00001 PanJit Semiconductor PE1805C4A6_R1_00001.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; ESD; SOT23-6; Ch: 4
Version: ESD
Application: Ethernet; USB
Max. off-state voltage: 5V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: SOT23-6
Capacitance: 0.8pF
Type of diode: TVS array
Number of channels: 4
Mounting: SMD
Breakdown voltage: 6...9V
Max. forward impulse current: 5A
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Lieferzeit 14-21 Tag (e)
715+0.12 EUR
782+0.11 EUR
839+0.1 EUR
918+0.093 EUR
966+0.088 EUR
1000+0.087 EUR
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PE1805C4C6_R1_00001 PE1805C4C6_R1_00001 PanJit Semiconductor PE1805C4C6.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; ESD; SOT363; Ch: 4
Version: ESD
Application: Ethernet; USB
Max. off-state voltage: 5V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: SOT363
Capacitance: 0.8pF
Type of diode: TVS array
Number of channels: 4
Mounting: SMD
Breakdown voltage: 6...9V
Max. forward impulse current: 5A
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334+0.25 EUR
544+0.15 EUR
777+0.11 EUR
949+0.089 EUR
1021+0.083 EUR
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PE4105C1ES_R1_00001 PE4105C1ES_R1_00001 PanJit Semiconductor PE4105C1ES Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷7.5V; 13A; unidirectional; ESD; SOD523; Ch: 1
Mounting: SMD
Version: ESD
Kind of package: reel; tape
Case: SOD523
Type of diode: TVS array
Semiconductor structure: unidirectional
Capacitance: 0.12nF
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 13A
Max. off-state voltage: 5V
Breakdown voltage: 6...7.5V
auf Bestellung 2750 Stücke:
Lieferzeit 14-21 Tag (e)
1000+0.086 EUR
1429+0.06 EUR
2033+0.042 EUR
2381+0.036 EUR
2500+0.035 EUR
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PE4105C2A_R1_00501 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 7.5V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2
Mounting: SMD
Case: SOT23
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.12nF
Leakage current: 1µA
Number of channels: 2
Max. forward impulse current: 1A
Max. off-state voltage: 5V
Breakdown voltage: 7.5V
Peak pulse power dissipation: 0.35kW
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PE4105C3C6_R1_00001 PanJit Semiconductor PE4105C3C6.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 13A; unidirectional; SOT363; Ch: 3
Mounting: SMD
Case: SOT363
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.12nF
Leakage current: 1µA
Number of channels: 3
Max. forward impulse current: 13A
Max. off-state voltage: 5V
Breakdown voltage: 6V
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PE4136C2A-AU_R1_000A1 PanJit Semiconductor PE4136C2A-AU_SERIES.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 40V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2
Case: SOT23
Mounting: SMD
Number of channels: 2
Application: automotive industry
Semiconductor structure: unidirectional
Type of diode: TVS
Capacitance: 0.1nF
Leakage current: 0.8µA
Max. forward impulse current: 1A
Max. off-state voltage: 36V
Breakdown voltage: 40V
Peak pulse power dissipation: 0.35kW
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PE4136C2A_R1_00001 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 40V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2
Case: SOT23
Mounting: SMD
Number of channels: 2
Semiconductor structure: unidirectional
Type of diode: TVS
Capacitance: 0.1nF
Leakage current: 1µA
Max. forward impulse current: 1A
Max. off-state voltage: 36V
Breakdown voltage: 40V
Peak pulse power dissipation: 0.35kW
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PE4307ES_R1_00701 PE4307ES_R1_00701 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 7.7V; 12.9A; unidirectional; SOD523; Ch: 1
Type of diode: TVS
Breakdown voltage: 7.7V
Max. forward impulse current: 12.9A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD523
Max. off-state voltage: 7V
Leakage current: 1µA
Number of channels: 1
Capacitance: 0.16nF
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PE4312C2A-AU_R1_007A1 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 15.5V; 8.3A; 0.35kW; unidirectional; SOT23; Ch: 2
Type of diode: TVS
Breakdown voltage: 15.5V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 12V
Leakage current: 1µA
Number of channels: 2
Capacitance: 90pF
Peak pulse power dissipation: 0.35kW
Application: automotive industry
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PE4312C2A_R1_00501 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 8.5V; 8.3A; 0.35kW; unidirectional; SOT23; Ch: 2
Type of diode: TVS
Breakdown voltage: 8.5V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 12V
Leakage current: 1µA
Number of channels: 2
Capacitance: 90pF
Peak pulse power dissipation: 0.35kW
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PE4312C2C-AU_R1_007A1 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 13.2V; 8.3A; unidirectional; SOT323; Ch: 2
Type of diode: TVS
Breakdown voltage: 13.2V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT323
Max. off-state voltage: 12V
Leakage current: 1µA
Number of channels: 2
Capacitance: 90pF
Application: automotive industry
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PE4312CS_R1_00701 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 15.5V; 8.3A; unidirectional; SOD323; Ch: 1
Type of diode: TVS
Breakdown voltage: 15.5V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 12V
Leakage current: 1µA
Number of channels: 1
Capacitance: 90pF
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PE4312ES_R1_00701 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 13.2V; 8.3A; unidirectional; SOD523; Ch: 1
Type of diode: TVS
Breakdown voltage: 13.2V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD523
Max. off-state voltage: 12V
Leakage current: 1µA
Number of channels: 1
Capacitance: 90pF
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PE4315C2A_R1_00501 PE4315C2A_R1_00501 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 15.5V; 7.8A; 0.35kW; unidirectional; SOT23; Ch: 2
Mounting: SMD
Breakdown voltage: 15.5V
Max. forward impulse current: 7.8A
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 12V
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: SOT23
Capacitance: 65pF
Type of diode: TVS
Number of channels: 2
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PE4336ES_R1_00701 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 39.6V; 3.3A; unidirectional; SOD523; Ch: 1
Type of diode: TVS
Breakdown voltage: 39.6V
Max. forward impulse current: 3.3A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD523
Max. off-state voltage: 36V
Leakage current: 1µA
Number of channels: 1
Capacitance: 20pF
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PE4512C2A-AU_R1_007A1 PE4512C2A-AU_R1_007A1 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 15.5V; 17.4A; 0.35kW; unidirectional; SOT23; Ch: 2
Type of diode: TVS
Breakdown voltage: 15.5V
Max. forward impulse current: 17.4A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 12V
Leakage current: 0.1µA
Number of channels: 2
Capacitance: 0.195nF
Peak pulse power dissipation: 0.35kW
Application: automotive industry
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PE4512CS_R1_00701 PE4512CS_R1_00701 PanJit Semiconductor PE4505CS_SERIES.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 12V; 17.4A; unidirectional; SOD323; Ch: 1
Type of diode: TVS
Breakdown voltage: 12V
Max. forward impulse current: 17.4A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 12V
Leakage current: 0.1µA
Number of channels: 1
Capacitance: 0.195nF
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PE4724L1Q-AU_R1_002A1 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 26.4V; 32A; unidirectional; DFN1610-2; Ch: 1
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.28nF
Leakage current: 1µA
Number of channels: 1
Max. off-state voltage: 24V
Breakdown voltage: 26.4V
Max. forward impulse current: 32A
Application: automotive industry
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PE4724L1Q_R1_00201 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 26.4V; 32A; unidirectional; DFN1610-2; Ch: 1
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.28nF
Leakage current: 1µA
Number of channels: 1
Max. off-state voltage: 24V
Breakdown voltage: 26.4V
Max. forward impulse current: 32A
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PE4728L1Q-AU_R1_002A1 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 30V; 27.5A; unidirectional; DFN1610-2; Ch: 1
Type of diode: TVS
Mounting: SMD
Case: DFN1610-2
Semiconductor structure: unidirectional
Breakdown voltage: 30V
Max. forward impulse current: 27.5A
Application: automotive industry
Max. off-state voltage: 28V
Leakage current: 1µA
Capacitance: 0.23nF
Number of channels: 1
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PE9180C1A-AU_R1_007A1 PanJit Semiconductor PE9180C1A-AU.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 100V; 20A; 0.35kW; bidirectional; SOT23; Ch: 2
Type of diode: TVS
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 80V
Breakdown voltage: 100V
Max. forward impulse current: 20A
Semiconductor structure: bidirectional
Case: SOT23
Mounting: SMD
Leakage current: 30nA
Capacitance: 0.6pF
Number of channels: 2
Application: automotive industry
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PEC11SD03M1Q_R1_00501 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Version: ESD
Max. off-state voltage: 3V
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.19pF
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PEC1605M1Q-AU_R1_005A1 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 6.8V; 2A; bidirectional; DFN1006-2; Ch: 1
Mounting: SMD
Capacitance: 0.6pF
Application: automotive industry
Max. off-state voltage: 5V
Semiconductor structure: bidirectional
Leakage current: 75nA
Case: DFN1006-2
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 6.8V
Max. forward impulse current: 2A
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PEC1605M1Q_R1_00001 PEC1605M1Q_R1_00001 PanJit Semiconductor PEC1605M1Q.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape
Mounting: SMD
Capacitance: 0.6pF
Semiconductor structure: bidirectional
Case: DFN1006-2
Version: ESD
Kind of package: reel; tape
Type of diode: TVS
Leakage current: 75nA
Max. off-state voltage: 5.5V
Breakdown voltage: 6.8...11.2V
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PEC3205C2C_R1_00701 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 5A; bidirectional; SOT323; Ch: 2
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Number of channels: 2
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Semiconductor structure: bidirectional
Case: SOT323
Mounting: SMD
Produkt ist nicht verfügbar
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PEC3205C2E_R1_00701 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 5A; bidirectional; SOT523; Ch: 2
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Number of channels: 2
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Semiconductor structure: bidirectional
Case: SOT523
Mounting: SMD
Produkt ist nicht verfügbar
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PEC3205CS_R1_00701 PanJit Semiconductor PEC3205CS Category: Protection diodes - arrays
Description: Diode: TVS; 8V; 5A; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Number of channels: 1
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 8V
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Produkt ist nicht verfügbar
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PEC3205ES-AU_R1_007A1 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 5A; bidirectional; SOD523; Ch: 1
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Number of channels: 1
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Application: automotive industry
Semiconductor structure: bidirectional
Case: SOD523
Mounting: SMD
Produkt ist nicht verfügbar
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PEC3205ES_R1_00701 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 5A; bidirectional; SOD523; Ch: 1
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Number of channels: 1
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Semiconductor structure: bidirectional
Case: SOD523
Mounting: SMD
Produkt ist nicht verfügbar
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PEC3205M1Q_R1_00201 PanJit Semiconductor PEC3202M1Q Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 5.5÷8V; bidirectional; DFN1006-2; reel,tape
Kind of package: reel; tape
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Max. off-state voltage: 5V
Breakdown voltage: 5.5...8V
Semiconductor structure: bidirectional
Case: DFN1006-2
Version: ESD
Mounting: SMD
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PEC3205S1Q_R1_00001 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 5A; bidirectional; DFN0603-2; Ch: 1
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Number of channels: 1
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Semiconductor structure: bidirectional
Case: DFN0603-2
Mounting: SMD
Produkt ist nicht verfügbar
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PEC33712C2A-AU_R1_000A1 PEC33712C2A-AU_R1_000A1 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 13.3V; 5A; bidirectional; SOT23; Ch: 2
Semiconductor structure: bidirectional
Application: automotive industry
Case: SOT23
Mounting: SMD
Type of diode: TVS
Leakage current: 1µA
Number of channels: 2
Max. forward impulse current: 5A
Max. off-state voltage: 12V
Breakdown voltage: 13.3V
Produkt ist nicht verfügbar
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PEC33712C2A_R1_00001 PEC33712C2A_R1_00001 PanJit Semiconductor PEC33712C2A.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 8A; asymmetric,bidirectional; ESD
Version: ESD
Semiconductor structure: asymmetric; bidirectional
Case: SOT23
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Capacitance: 35pF
Leakage current: 1µA
Number of channels: 2
Max. forward impulse current: 8A
Max. off-state voltage: 7...12V
Breakdown voltage: 7.5...13.3V
Produkt ist nicht verfügbar
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PEC4105C2A_R1_00501 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 20A; bidirectional; SOT23; Ch: 2
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Max. forward impulse current: 20A
Semiconductor structure: bidirectional
Case: SOT23
Mounting: SMD
Leakage current: 0.5µA
Capacitance: 80pF
Number of channels: 2
Produkt ist nicht verfügbar
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PEC4105CS_R1_00701 PanJit Semiconductor PEC4102CS_SERIES.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 20A; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Max. forward impulse current: 20A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 0.5µA
Capacitance: 80pF
Number of channels: 1
Produkt ist nicht verfügbar
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PG4007-AU_R2_100A1 PG4007-AU_R2_100A1 PanJit Semiconductor Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V; Ir: 50uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Leakage current: 50µA
Application: automotive industry
Produkt ist nicht verfügbar
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PJ30072S6_R1_00301 PanJit Semiconductor PJ30072.pdf Category: Voltage regulators - DC/DC circuits
Description: Converter: DC/DC; Uin: 750mVDC÷5.5VDC; SOT23-6
Input voltage: 750mV DC...5.5V DC
Output current: 0.75A
Case: SOT23-6
Operating temperature: -40...85°C
Type of converter: DC/DC
Produkt ist nicht verfügbar
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PJ4L40W6_R1_00001 PanJit Semiconductor PJ4L40W6.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 30V; quadruple; SOT23-6L; Ch: 4
Type of diode: TVS
Breakdown voltage: 30V
Semiconductor structure: quadruple
Mounting: SMD
Case: SOT23-6L
Max. off-state voltage: 30V
Leakage current: 2µA
Number of channels: 4
Capacitance: 19pF
Produkt ist nicht verfügbar
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PJA138K-AU_R1_000A1 PJA138K-AU_R1_000A1 PanJit Semiconductor PJA138K-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 1764 Stücke:
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313+0.27 EUR
794+0.11 EUR
1119+0.076 EUR
1471+0.058 EUR
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PJA3400-AU_R1_000A1 PJA3400-AU_R1_000A1 PanJit Semiconductor Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; SOT23-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Case: SOT23-6
Gate-source voltage: 12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJA3400_R1_00001 PJA3400_R1_00001 PanJit Semiconductor PJA3400.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.9A
Pulsed drain current: 19.6A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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302+0.29 EUR
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667+0.13 EUR
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PJA3401A_R1_00001 PJA3401A_R1_00001 PanJit Semiconductor PJA3401A.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Pulsed drain current: -14.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
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792+0.11 EUR
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PJA3402_R1_00501 PJA3402_R1_00501 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Mounting: SMD
Pulsed drain current: 17.6A
Power dissipation: 1.25W
Gate charge: 11.3nC
Polarisation: unipolar
Drain current: 4.4A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 92mΩ
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618+0.14 EUR
826+0.1 EUR
916+0.093 EUR
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3000+0.074 EUR
9000+0.073 EUR
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PJA3403_R1_00001 PJA3403_R1_00001 PanJit Semiconductor PJA3403.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.1A; Idm: -12.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.1A
Pulsed drain current: -12.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.165Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
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PJA3404_R1_00501 PJA3404_R1_00501 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 22A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.6A
Pulsed drain current: 22A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 7.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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207+0.42 EUR
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500+0.17 EUR
569+0.15 EUR
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PJA3406-AU_R1_000A1 PJA3406-AU_R1_000A1 PanJit Semiconductor Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 1.6A; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.6A
Case: SOT23-6
Gate-source voltage: 8V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PDZ6.8B-AU_R1_000A1 PDZ4.7B-AU_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 6.8V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
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PDZ6.8B_R1_00001 PDZ4.7B_SER.pdf
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 6.8V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 6.8V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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PDZ7.5B-AU_R1_000A1 PDZ4.7B-AU_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 7.5V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
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PDZ7.5B_R1_00001 PDZ4.7B_SER.pdf
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 7.5V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 7.5V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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PDZ8.2B-AU_R1_000A1 PDZ4.7B-AU_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 8.2V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
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PDZ8.2B_R1_00001 PDZ4.7B_SER.pdf
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 8.2V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 8.2V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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PDZ9.1B-AU_R1_000A1 PDZ4.7B-AU_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 9.1V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Application: automotive industry
Produkt ist nicht verfügbar
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PDZ9.1B_R1_00001 PDZ4.7B_SER.pdf
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 400mW; 9.1V; SMD; SOD323; reel,tape; single diode
Type of diode: Zener
Power dissipation: 0.4W
Zener voltage: 9.1V
Mounting: SMD
Tolerance: ±2%
Case: SOD323
Kind of package: reel; tape
Semiconductor structure: single diode
Produkt ist nicht verfügbar
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PE1605C4A6-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 1A; unidirectional; SOT23-6L; Ch: 4
Type of diode: TVS
Breakdown voltage: 6V
Max. forward impulse current: 1A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23-6L
Max. off-state voltage: 5.5V
Leakage current: 1µA
Number of channels: 4
Capacitance: 0.6pF
Application: automotive industry
Produkt ist nicht verfügbar
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PE1605C4A6_R1_00001
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 1A; unidirectional; SOT23-6L; Ch: 4
Type of diode: TVS
Breakdown voltage: 6V
Max. forward impulse current: 1A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23-6L
Max. off-state voltage: 5.5V
Leakage current: 1µA
Number of channels: 4
Capacitance: 0.6pF
Produkt ist nicht verfügbar
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PE1605C4A6_S1_00001
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 1A; unidirectional; SOT23-6L; Ch: 4
Type of diode: TVS
Breakdown voltage: 6V
Max. forward impulse current: 1A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23-6L
Max. off-state voltage: 5.5V
Leakage current: 1µA
Number of channels: 4
Capacitance: 0.6pF
Produkt ist nicht verfügbar
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PE1605C4E6-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 4A; unidirectional; SOT563; Ch: 4
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Max. forward impulse current: 4A
Semiconductor structure: unidirectional
Mounting: SMD
Leakage current: 1µA
Capacitance: 0.6pF
Case: SOT563
Number of channels: 4
Application: automotive industry
Produkt ist nicht verfügbar
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PE1605C4E6-AU_S1_000A1 PE1605C4E6-AU.pdf
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 4A; unidirectional; SOT563; Ch: 4
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Max. forward impulse current: 4A
Semiconductor structure: unidirectional
Mounting: SMD
Leakage current: 1µA
Capacitance: 0.6pF
Case: SOT563
Number of channels: 4
Application: automotive industry
Produkt ist nicht verfügbar
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PE1605C4E6_R1_00001 PE1605C4E6.pdf
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 4A; unidirectional; SOT563; Ch: 4
Type of diode: TVS
Max. off-state voltage: 5.5V
Breakdown voltage: 6V
Max. forward impulse current: 4A
Semiconductor structure: unidirectional
Mounting: SMD
Leakage current: 1µA
Capacitance: 0.6pF
Case: SOT563
Number of channels: 4
Produkt ist nicht verfügbar
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PE1805C4A6_R1_00001 PE1805C4A6_R1_00001.pdf
PE1805C4A6_R1_00001
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; ESD; SOT23-6; Ch: 4
Version: ESD
Application: Ethernet; USB
Max. off-state voltage: 5V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: SOT23-6
Capacitance: 0.8pF
Type of diode: TVS array
Number of channels: 4
Mounting: SMD
Breakdown voltage: 6...9V
Max. forward impulse current: 5A
auf Bestellung 8067 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
715+0.12 EUR
782+0.11 EUR
839+0.1 EUR
918+0.093 EUR
966+0.088 EUR
1000+0.087 EUR
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PE1805C4C6_R1_00001 PE1805C4C6.pdf
PE1805C4C6_R1_00001
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷9V; 5A; unidirectional; ESD; SOT363; Ch: 4
Version: ESD
Application: Ethernet; USB
Max. off-state voltage: 5V
Kind of package: reel; tape
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: SOT363
Capacitance: 0.8pF
Type of diode: TVS array
Number of channels: 4
Mounting: SMD
Breakdown voltage: 6...9V
Max. forward impulse current: 5A
auf Bestellung 2965 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
334+0.25 EUR
544+0.15 EUR
777+0.11 EUR
949+0.089 EUR
1021+0.083 EUR
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PE4105C1ES_R1_00001 PE4105C1ES
PE4105C1ES_R1_00001
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6÷7.5V; 13A; unidirectional; ESD; SOD523; Ch: 1
Mounting: SMD
Version: ESD
Kind of package: reel; tape
Case: SOD523
Type of diode: TVS array
Semiconductor structure: unidirectional
Capacitance: 0.12nF
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 13A
Max. off-state voltage: 5V
Breakdown voltage: 6...7.5V
auf Bestellung 2750 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
1000+0.086 EUR
1429+0.06 EUR
2033+0.042 EUR
2381+0.036 EUR
2500+0.035 EUR
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PE4105C2A_R1_00501
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 7.5V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2
Mounting: SMD
Case: SOT23
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.12nF
Leakage current: 1µA
Number of channels: 2
Max. forward impulse current: 1A
Max. off-state voltage: 5V
Breakdown voltage: 7.5V
Peak pulse power dissipation: 0.35kW
Produkt ist nicht verfügbar
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PE4105C3C6_R1_00001 PE4105C3C6.pdf
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 13A; unidirectional; SOT363; Ch: 3
Mounting: SMD
Case: SOT363
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.12nF
Leakage current: 1µA
Number of channels: 3
Max. forward impulse current: 13A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Produkt ist nicht verfügbar
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PE4136C2A-AU_R1_000A1 PE4136C2A-AU_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 40V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2
Case: SOT23
Mounting: SMD
Number of channels: 2
Application: automotive industry
Semiconductor structure: unidirectional
Type of diode: TVS
Capacitance: 0.1nF
Leakage current: 0.8µA
Max. forward impulse current: 1A
Max. off-state voltage: 36V
Breakdown voltage: 40V
Peak pulse power dissipation: 0.35kW
Produkt ist nicht verfügbar
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PE4136C2A_R1_00001
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 40V; 1A; 0.35kW; unidirectional; SOT23; Ch: 2
Case: SOT23
Mounting: SMD
Number of channels: 2
Semiconductor structure: unidirectional
Type of diode: TVS
Capacitance: 0.1nF
Leakage current: 1µA
Max. forward impulse current: 1A
Max. off-state voltage: 36V
Breakdown voltage: 40V
Peak pulse power dissipation: 0.35kW
Produkt ist nicht verfügbar
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PE4307ES_R1_00701
PE4307ES_R1_00701
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 7.7V; 12.9A; unidirectional; SOD523; Ch: 1
Type of diode: TVS
Breakdown voltage: 7.7V
Max. forward impulse current: 12.9A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD523
Max. off-state voltage: 7V
Leakage current: 1µA
Number of channels: 1
Capacitance: 0.16nF
Produkt ist nicht verfügbar
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PE4312C2A-AU_R1_007A1
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 15.5V; 8.3A; 0.35kW; unidirectional; SOT23; Ch: 2
Type of diode: TVS
Breakdown voltage: 15.5V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 12V
Leakage current: 1µA
Number of channels: 2
Capacitance: 90pF
Peak pulse power dissipation: 0.35kW
Application: automotive industry
Produkt ist nicht verfügbar
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PE4312C2A_R1_00501
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 8.5V; 8.3A; 0.35kW; unidirectional; SOT23; Ch: 2
Type of diode: TVS
Breakdown voltage: 8.5V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 12V
Leakage current: 1µA
Number of channels: 2
Capacitance: 90pF
Peak pulse power dissipation: 0.35kW
Produkt ist nicht verfügbar
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PE4312C2C-AU_R1_007A1
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 13.2V; 8.3A; unidirectional; SOT323; Ch: 2
Type of diode: TVS
Breakdown voltage: 13.2V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT323
Max. off-state voltage: 12V
Leakage current: 1µA
Number of channels: 2
Capacitance: 90pF
Application: automotive industry
Produkt ist nicht verfügbar
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PE4312CS_R1_00701
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 15.5V; 8.3A; unidirectional; SOD323; Ch: 1
Type of diode: TVS
Breakdown voltage: 15.5V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 12V
Leakage current: 1µA
Number of channels: 1
Capacitance: 90pF
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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PE4312ES_R1_00701
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 13.2V; 8.3A; unidirectional; SOD523; Ch: 1
Type of diode: TVS
Breakdown voltage: 13.2V
Max. forward impulse current: 8.3A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD523
Max. off-state voltage: 12V
Leakage current: 1µA
Number of channels: 1
Capacitance: 90pF
Produkt ist nicht verfügbar
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PE4315C2A_R1_00501
PE4315C2A_R1_00501
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 15.5V; 7.8A; 0.35kW; unidirectional; SOT23; Ch: 2
Mounting: SMD
Breakdown voltage: 15.5V
Max. forward impulse current: 7.8A
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 12V
Semiconductor structure: unidirectional
Leakage current: 1µA
Case: SOT23
Capacitance: 65pF
Type of diode: TVS
Number of channels: 2
Produkt ist nicht verfügbar
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PE4336ES_R1_00701
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 39.6V; 3.3A; unidirectional; SOD523; Ch: 1
Type of diode: TVS
Breakdown voltage: 39.6V
Max. forward impulse current: 3.3A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD523
Max. off-state voltage: 36V
Leakage current: 1µA
Number of channels: 1
Capacitance: 20pF
Produkt ist nicht verfügbar
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PE4512C2A-AU_R1_007A1
PE4512C2A-AU_R1_007A1
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 15.5V; 17.4A; 0.35kW; unidirectional; SOT23; Ch: 2
Type of diode: TVS
Breakdown voltage: 15.5V
Max. forward impulse current: 17.4A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 12V
Leakage current: 0.1µA
Number of channels: 2
Capacitance: 0.195nF
Peak pulse power dissipation: 0.35kW
Application: automotive industry
Produkt ist nicht verfügbar
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PE4512CS_R1_00701 PE4505CS_SERIES.pdf
PE4512CS_R1_00701
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 12V; 17.4A; unidirectional; SOD323; Ch: 1
Type of diode: TVS
Breakdown voltage: 12V
Max. forward impulse current: 17.4A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 12V
Leakage current: 0.1µA
Number of channels: 1
Capacitance: 0.195nF
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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PE4724L1Q-AU_R1_002A1
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 26.4V; 32A; unidirectional; DFN1610-2; Ch: 1
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.28nF
Leakage current: 1µA
Number of channels: 1
Max. off-state voltage: 24V
Breakdown voltage: 26.4V
Max. forward impulse current: 32A
Application: automotive industry
Produkt ist nicht verfügbar
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PE4724L1Q_R1_00201
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 26.4V; 32A; unidirectional; DFN1610-2; Ch: 1
Case: DFN1610-2
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.28nF
Leakage current: 1µA
Number of channels: 1
Max. off-state voltage: 24V
Breakdown voltage: 26.4V
Max. forward impulse current: 32A
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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PE4728L1Q-AU_R1_002A1
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 30V; 27.5A; unidirectional; DFN1610-2; Ch: 1
Type of diode: TVS
Mounting: SMD
Case: DFN1610-2
Semiconductor structure: unidirectional
Breakdown voltage: 30V
Max. forward impulse current: 27.5A
Application: automotive industry
Max. off-state voltage: 28V
Leakage current: 1µA
Capacitance: 0.23nF
Number of channels: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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PE9180C1A-AU_R1_007A1 PE9180C1A-AU.pdf
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 100V; 20A; 0.35kW; bidirectional; SOT23; Ch: 2
Type of diode: TVS
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 80V
Breakdown voltage: 100V
Max. forward impulse current: 20A
Semiconductor structure: bidirectional
Case: SOT23
Mounting: SMD
Leakage current: 30nA
Capacitance: 0.6pF
Number of channels: 2
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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PEC11SD03M1Q_R1_00501
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape
Type of diode: TVS
Version: ESD
Max. off-state voltage: 3V
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Capacitance: 0.19pF
Produkt ist nicht verfügbar
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PEC1605M1Q-AU_R1_005A1
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6.8V; 2A; bidirectional; DFN1006-2; Ch: 1
Mounting: SMD
Capacitance: 0.6pF
Application: automotive industry
Max. off-state voltage: 5V
Semiconductor structure: bidirectional
Leakage current: 75nA
Case: DFN1006-2
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 6.8V
Max. forward impulse current: 2A
Produkt ist nicht verfügbar
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PEC1605M1Q_R1_00001 PEC1605M1Q.pdf
PEC1605M1Q_R1_00001
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape
Mounting: SMD
Capacitance: 0.6pF
Semiconductor structure: bidirectional
Case: DFN1006-2
Version: ESD
Kind of package: reel; tape
Type of diode: TVS
Leakage current: 75nA
Max. off-state voltage: 5.5V
Breakdown voltage: 6.8...11.2V
Produkt ist nicht verfügbar
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PEC3205C2C_R1_00701
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 5A; bidirectional; SOT323; Ch: 2
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Number of channels: 2
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Semiconductor structure: bidirectional
Case: SOT323
Mounting: SMD
Produkt ist nicht verfügbar
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PEC3205C2E_R1_00701
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 5A; bidirectional; SOT523; Ch: 2
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Number of channels: 2
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Semiconductor structure: bidirectional
Case: SOT523
Mounting: SMD
Produkt ist nicht verfügbar
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PEC3205CS_R1_00701 PEC3205CS
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 8V; 5A; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Number of channels: 1
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 8V
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Produkt ist nicht verfügbar
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PEC3205ES-AU_R1_007A1
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 5A; bidirectional; SOD523; Ch: 1
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Number of channels: 1
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Application: automotive industry
Semiconductor structure: bidirectional
Case: SOD523
Mounting: SMD
Produkt ist nicht verfügbar
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PEC3205ES_R1_00701
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 5A; bidirectional; SOD523; Ch: 1
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Number of channels: 1
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Semiconductor structure: bidirectional
Case: SOD523
Mounting: SMD
Produkt ist nicht verfügbar
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PEC3205M1Q_R1_00201 PEC3202M1Q
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 5.5÷8V; bidirectional; DFN1006-2; reel,tape
Kind of package: reel; tape
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Max. off-state voltage: 5V
Breakdown voltage: 5.5...8V
Semiconductor structure: bidirectional
Case: DFN1006-2
Version: ESD
Mounting: SMD
Produkt ist nicht verfügbar
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PEC3205S1Q_R1_00001
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 5A; bidirectional; DFN0603-2; Ch: 1
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Number of channels: 1
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Semiconductor structure: bidirectional
Case: DFN0603-2
Mounting: SMD
Produkt ist nicht verfügbar
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PEC33712C2A-AU_R1_000A1
PEC33712C2A-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 13.3V; 5A; bidirectional; SOT23; Ch: 2
Semiconductor structure: bidirectional
Application: automotive industry
Case: SOT23
Mounting: SMD
Type of diode: TVS
Leakage current: 1µA
Number of channels: 2
Max. forward impulse current: 5A
Max. off-state voltage: 12V
Breakdown voltage: 13.3V
Produkt ist nicht verfügbar
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PEC33712C2A_R1_00001 PEC33712C2A.pdf
PEC33712C2A_R1_00001
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 8A; asymmetric,bidirectional; ESD
Version: ESD
Semiconductor structure: asymmetric; bidirectional
Case: SOT23
Kind of package: reel; tape
Mounting: SMD
Type of diode: TVS array
Capacitance: 35pF
Leakage current: 1µA
Number of channels: 2
Max. forward impulse current: 8A
Max. off-state voltage: 7...12V
Breakdown voltage: 7.5...13.3V
Produkt ist nicht verfügbar
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PEC4105C2A_R1_00501
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 20A; bidirectional; SOT23; Ch: 2
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Max. forward impulse current: 20A
Semiconductor structure: bidirectional
Case: SOT23
Mounting: SMD
Leakage current: 0.5µA
Capacitance: 80pF
Number of channels: 2
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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PEC4105CS_R1_00701 PEC4102CS_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 20A; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Max. forward impulse current: 20A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 0.5µA
Capacitance: 80pF
Number of channels: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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PG4007-AU_R2_100A1
PG4007-AU_R2_100A1
Hersteller: PanJit Semiconductor
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V; Ir: 50uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Leakage current: 50µA
Application: automotive industry
Produkt ist nicht verfügbar
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PJ30072S6_R1_00301 PJ30072.pdf
Hersteller: PanJit Semiconductor
Category: Voltage regulators - DC/DC circuits
Description: Converter: DC/DC; Uin: 750mVDC÷5.5VDC; SOT23-6
Input voltage: 750mV DC...5.5V DC
Output current: 0.75A
Case: SOT23-6
Operating temperature: -40...85°C
Type of converter: DC/DC
Produkt ist nicht verfügbar
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PJ4L40W6_R1_00001 PJ4L40W6.pdf
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 30V; quadruple; SOT23-6L; Ch: 4
Type of diode: TVS
Breakdown voltage: 30V
Semiconductor structure: quadruple
Mounting: SMD
Case: SOT23-6L
Max. off-state voltage: 30V
Leakage current: 2µA
Number of channels: 4
Capacitance: 19pF
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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PJA138K-AU_R1_000A1 PJA138K-AU.pdf
PJA138K-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 1764 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
313+0.27 EUR
794+0.11 EUR
1119+0.076 EUR
1471+0.058 EUR
1684+0.05 EUR
Mindestbestellmenge: 313 Stücke
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PJA3400-AU_R1_000A1
PJA3400-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; SOT23-6
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -2A
Case: SOT23-6
Gate-source voltage: 12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJA3400_R1_00001 PJA3400.pdf
PJA3400_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.9A
Pulsed drain current: 19.6A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 60mΩ
Mounting: SMD
Gate charge: 5.7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1170 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
186+0.46 EUR
302+0.29 EUR
486+0.18 EUR
667+0.13 EUR
1000+0.11 EUR
Mindestbestellmenge: 186 Stücke
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PJA3401A_R1_00001 PJA3401A.pdf
PJA3401A_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Pulsed drain current: -14.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1783 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
228+0.37 EUR
286+0.3 EUR
511+0.17 EUR
792+0.11 EUR
1000+0.092 EUR
Mindestbestellmenge: 228 Stücke
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PJA3402_R1_00501
PJA3402_R1_00501
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Mounting: SMD
Pulsed drain current: 17.6A
Power dissipation: 1.25W
Gate charge: 11.3nC
Polarisation: unipolar
Drain current: 4.4A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 92mΩ
auf Bestellung 9005 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
455+0.19 EUR
618+0.14 EUR
826+0.1 EUR
916+0.093 EUR
991+0.086 EUR
1038+0.082 EUR
3000+0.074 EUR
9000+0.073 EUR
Mindestbestellmenge: 455 Stücke
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PJA3403_R1_00001 PJA3403.pdf
PJA3403_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.1A; Idm: -12.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.1A
Pulsed drain current: -12.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.165Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 688 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
239+0.36 EUR
350+0.24 EUR
601+0.14 EUR
688+0.12 EUR
Mindestbestellmenge: 239 Stücke
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PJA3404_R1_00501
PJA3404_R1_00501
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 22A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.6A
Pulsed drain current: 22A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 7.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2839 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
139+0.61 EUR
207+0.42 EUR
459+0.19 EUR
500+0.17 EUR
569+0.15 EUR
1000+0.13 EUR
Mindestbestellmenge: 139 Stücke
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PJA3406-AU_R1_000A1
PJA3406-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 1.6A; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.6A
Case: SOT23-6
Gate-source voltage: 8V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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