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PJMH060N65FR2_T0_00601 PanJit Semiconductor PJMH060N65FR2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 58.3A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 58.3A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMH074N60FRCH_T0_00601 PanJit Semiconductor PJMH074N60FRCH.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMH074N60FRC_T0_00601 PJMH074N60FRC_T0_00601 PanJit Semiconductor PJMH074N60FRC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; Idm: 117A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Case: TO247AD-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 74mΩ
Pulsed drain current: 117A
Power dissipation: 446W
Gate charge: 84nC
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PJMH080N65FR2_T0_00601 PanJit Semiconductor PJMH080N65FR2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMH099N60EC_T0_00601 PanJit Semiconductor PJMH099N60EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMH120N60EC_T0_00601 PJMH120N60EC_T0_00601 PanJit Semiconductor PJMH120N60EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 51nC
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PJMH125N60FRC_T0_00601 PanJit Semiconductor PJMH125N60FRC Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO247AD-3
Polarisation: unipolar
Drain current: 30A
Gate-source voltage: 30V
Case: TO247AD-3
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: THT
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PJMH190N60E1_T0_00601 PanJit Semiconductor PJMH190N60E1.pdf PJMH190N60E1-T0 THT N channel transistors
auf Bestellung 28 Stücke:
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13+5.56 EUR
28+2.56 EUR
1020+1.96 EUR
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PJMH190N65FR2_T0_00601 PanJit Semiconductor PJMH190N65FR2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.7A
Case: TO247AD-3
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMK040N60EC_T0_00201 PanJit Semiconductor PJMK040N60EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 71A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 71A
Case: TO247AD-3
Gate-source voltage: 40V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMK074N60FRCH_T0_00201 PanJit Semiconductor PJMK074N60FRCH.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Case: TO247AD-3
Gate-source voltage: 74V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMP060N65FR2_T0_00601 PanJit Semiconductor PJMP060N65FR2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 58.3A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 58.3A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMP080N65FR2_T0_00601 PanJit Semiconductor PJMP080N65FR2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMP099N60EC_T0_00601 PanJit Semiconductor PJMP099N60EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMP120N60EC_T0_00001 PJMP120N60EC_T0_00001 PanJit Semiconductor PJMP120N60EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 51nC
Pulsed drain current: 69A
Anzahl je Verpackung: 1 Stücke
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Lieferzeit 7-14 Tag (e)
16+4.48 EUR
18+4 EUR
50+3.36 EUR
100+3.02 EUR
250+2.79 EUR
500+2.67 EUR
1000+2.4 EUR
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PJMP120N60EC_T0_00001 PJMP120N60EC_T0_00001 PanJit Semiconductor PJMP120N60EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 51nC
Pulsed drain current: 69A
auf Bestellung 86 Stücke:
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16+4.48 EUR
18+4 EUR
50+3.36 EUR
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PJMP125N60FRC_T0_00601 PanJit Semiconductor PJMP125N60FRC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO220AB
Polarisation: unipolar
Drain current: 30A
Gate-source voltage: 30V
Case: TO220AB
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: THT
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PJMP190N65FR2_T0_00601 PanJit Semiconductor PJMP190N65FR2 Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.7A
Case: TO220AB
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
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PJMP210N65EC_T0_00601 PJMP210N65EC_T0_00601 PanJit Semiconductor PJMP210N65EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 150W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42A
Gate charge: 34nC
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PJMP360N60EC_T0_00001 PJMP360N60EC_T0_00001 PanJit Semiconductor PJMP360N60EC.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhancement
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PJP125N06SA-AU_T0_006A1 PanJit Semiconductor PJP125N06SA-AU.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 215A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 215A
Case: TO220AB
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJP18N20_T0_00001 PanJit Semiconductor PJx18N20.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; TO220AB
Case: TO220AB
Mounting: THT
Drain current: 18A
Gate-source voltage: 20V
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
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PJP75N06SA-AU_T0_006A1 PanJit Semiconductor PJP75N06SA-AU.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 64A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 64A
Case: TO220AB
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJQ1905_R1_00201 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: P-MOSFET; unipolar; 60V; 0.5A; Idm: 1A; 500mW; DFN1006-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1A
Power dissipation: 0.5W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 13Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhancement
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PJQ1906_R1_00201 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.3A
Case: DFN1006-3
Gate-source voltage: 10V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJQ1908-AU_R1_002A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 900mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.9W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 1.45Ω
Mounting: SMD
Gate charge: 0.95nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJQ1916_R1_00201 PanJit Semiconductor PJQ1916.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 950mA; DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.95A
Case: DFN1006-3
Gate-source voltage: 8V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJQ1916_S1_00201 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 950mA; DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.95A
Case: DFN1006-3
Gate-source voltage: 8V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJQ2460-AU_R1_000A1 PanJit Semiconductor PJQ2460-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; Idm: 12.8A; 2.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Pulsed drain current: 12.8A
Power dissipation: 2.4W
Case: DFN2020B-6
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJQ4433EP_R2_00201 PanJit Semiconductor Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -62A; Idm: -195A; 21.7W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -62A
Pulsed drain current: -195A
Power dissipation: 21.7W
Case: DFN3333-8
Gate-source voltage: ±25V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel
Kind of channel: enhancement
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PJQ4435EP_R2_00201 PanJit Semiconductor PJQ4435EP.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -41A; Idm: -138A; 13.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -41A
Pulsed drain current: -138A
Power dissipation: 13.5W
Case: DFN3333-8
Gate-source voltage: ±25V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel
Kind of channel: enhancement
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PJQ4468AP-AU_R2_000A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 18A; DFN3333-8
Kind of package: reel; tape
Application: automotive industry
Case: DFN3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain current: 18A
Gate-source voltage: 20V
Drain-source voltage: 60V
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PJQ4524P-AU_R2_002A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 320A; 22.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 22.7W
Case: DFN3333-8
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJQ4540S6CP-AU_R2_002A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 168A; DFN3333-8
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 40V
Drain current: 168A
Application: automotive industry
Kind of package: reel; tape
Case: DFN3333-8
Kind of channel: enhancement
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PJQ4540S6VCP-AU_R2_002A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; DFN3333-8
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 40V
Drain current: 160A
Application: automotive industry
Kind of package: reel; tape
Case: DFN3333-8
Kind of channel: enhancement
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PJQ4546VP-AU_R2_002A1 PJQ4546VP-AU_R2_002A1 PanJit Semiconductor PJQ4546VP-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 61A; Idm: 244A; 42W; DFN3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 61A
Pulsed drain current: 244A
Power dissipation: 42W
Case: DFN3333-8
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJQ5453E-AU_R2_002A1 PanJit Semiconductor PJQ5453E-AU.pdf Category: SMD N channel transistors
Description: Transistor: P-MOSFET; unipolar; 40V; 16A; DFN5060-8
Case: DFN5060-8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: 16A
Gate-source voltage: 25V
Drain-source voltage: 40V
Application: automotive industry
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PJQ5458A-AU_R2_000A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; DFN5060-8
Application: automotive industry
Kind of package: reel; tape
Case: DFN5060-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 16A
Gate-source voltage: 20V
Drain-source voltage: 60V
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PJQ5474A_R2_00001 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; DFN5060-8
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Drain current: 18A
Gate-source voltage: 20V
Drain-source voltage: 100V
Polarisation: unipolar
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PJQ5528-AU_R2_002A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 244A; 15.6W
Kind of package: reel; tape
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 11nC
On-state resistance: 6mΩ
Power dissipation: 15.6W
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 61A
Pulsed drain current: 244A
Application: automotive industry
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PJQ5528S6-AU_R2_002A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 67A; DFN5060-8
Kind of package: reel; tape
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 30V
Drain current: 67A
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5528_R2_00201 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; DFN5060-8
Kind of package: reel; tape
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 30V
Drain current: 61A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5544-AU_R2_002A1 PJQ5544-AU_R2_002A1 PanJit Semiconductor PJQ5544-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 520A; 100W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 520A
Power dissipation: 100W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 1952 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.83 EUR
58+1.25 EUR
100+0.9 EUR
250+0.81 EUR
500+0.75 EUR
1000+0.7 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5544-AU_R2_002A1 PJQ5544-AU_R2_002A1 PanJit Semiconductor PJQ5544-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 520A; 100W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 520A
Power dissipation: 100W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1952 Stücke:
Lieferzeit 7-14 Tag (e)
40+1.83 EUR
58+1.25 EUR
100+0.9 EUR
250+0.81 EUR
500+0.75 EUR
1000+0.7 EUR
3000+0.64 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5544V-AU_R2_002A1 PJQ5544V-AU_R2_002A1 PanJit Semiconductor PJQ5544V-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 94W; DFN5060-8
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 34nC
On-state resistance: 4.6mΩ
Gate-source voltage: ±20V
Power dissipation: 94W
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Polarisation: unipolar
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5546V-AU_R2_002A1 PJQ5546V-AU_R2_002A1 PanJit Semiconductor PJQ5546V-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 79A; Idm: 316A; 65W; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 79A
Pulsed drain current: 316A
Power dissipation: 65W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5948V-AU_R2_002A1 PJQ5948V-AU_R2_002A1 PanJit Semiconductor PJQ5948V-AU.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 35A; Idm: 140A; 32W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 35A
Pulsed drain current: 140A
Power dissipation: 32W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJS6421_S1_00001 PanJit Semiconductor PJS6421.pdf PJS6421-S1 SMD P channel transistors
auf Bestellung 2941 Stücke:
Lieferzeit 7-14 Tag (e)
141+0.51 EUR
496+0.14 EUR
24000+0.13 EUR
Mindestbestellmenge: 141
Im Einkaufswagen  Stück im Wert von  UAH
PJS6601_S1_00001 PJS6601_S1_00001 PanJit Semiconductor Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 4.1/-3.1A; 1.25W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 4.1/-3.1A
Power dissipation: 1.25W
Case: SOT23-6
Gate-source voltage: ±12V
On-state resistance: 95/190mΩ
Mounting: SMD
Gate charge: 4.6/5.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2648 Stücke:
Lieferzeit 7-14 Tag (e)
162+0.44 EUR
234+0.31 EUR
307+0.23 EUR
345+0.21 EUR
500+0.19 EUR
1000+0.17 EUR
3000+0.15 EUR
Mindestbestellmenge: 162
Im Einkaufswagen  Stück im Wert von  UAH
PJS6601_S1_00001 PJS6601_S1_00001 PanJit Semiconductor Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 4.1/-3.1A; 1.25W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 4.1/-3.1A
Power dissipation: 1.25W
Case: SOT23-6
Gate-source voltage: ±12V
On-state resistance: 95/190mΩ
Mounting: SMD
Gate charge: 4.6/5.4nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2648 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.44 EUR
234+0.31 EUR
307+0.23 EUR
345+0.21 EUR
500+0.19 EUR
1000+0.17 EUR
Mindestbestellmenge: 162
Im Einkaufswagen  Stück im Wert von  UAH
PJS6839_S1_00001 PJS6839_S1_00001 PanJit Semiconductor PJS6839.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -300mA; Idm: -1A; 500mW
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1A
Drain current: -0.3A
Gate charge: 1.1nC
Power dissipation: 0.5W
On-state resistance: 13Ω
Gate-source voltage: ±20V
Case: SOT23-6
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2949 Stücke:
Lieferzeit 7-14 Tag (e)
179+0.4 EUR
261+0.27 EUR
427+0.17 EUR
903+0.079 EUR
957+0.075 EUR
30000+0.074 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
PJS6839_S1_00001 PJS6839_S1_00001 PanJit Semiconductor PJS6839.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -300mA; Idm: -1A; 500mW
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1A
Drain current: -0.3A
Gate charge: 1.1nC
Power dissipation: 0.5W
On-state resistance: 13Ω
Gate-source voltage: ±20V
Case: SOT23-6
auf Bestellung 2949 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.4 EUR
261+0.27 EUR
427+0.17 EUR
903+0.079 EUR
957+0.075 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
PJSD03TS-AU_R1_000A1 PJSD03TS-AU_R1_000A1 PanJit Semiconductor PJSD03TS-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 120W; 4V; 5A; unidirectional; SOD523; reel,tape; 200pF
Mounting: SMD
Case: SOD523
Capacitance: 200pF
Leakage current: 0.2mA
Max. forward impulse current: 5A
Max. off-state voltage: 3.3V
Breakdown voltage: 4V
Peak pulse power dissipation: 120W
Application: automotive industry
Version: ESD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
auf Bestellung 4600 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.17 EUR
569+0.13 EUR
762+0.094 EUR
845+0.085 EUR
915+0.078 EUR
1000+0.075 EUR
2500+0.071 EUR
Mindestbestellmenge: 417
Im Einkaufswagen  Stück im Wert von  UAH
PJSD03TS-AU_R1_000A1 PJSD03TS-AU_R1_000A1 PanJit Semiconductor PJSD03TS-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 120W; 4V; 5A; unidirectional; SOD523; reel,tape; 200pF
Mounting: SMD
Case: SOD523
Capacitance: 200pF
Leakage current: 0.2mA
Max. forward impulse current: 5A
Max. off-state voltage: 3.3V
Breakdown voltage: 4V
Peak pulse power dissipation: 120W
Application: automotive industry
Version: ESD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4600 Stücke:
Lieferzeit 7-14 Tag (e)
417+0.17 EUR
569+0.13 EUR
762+0.094 EUR
845+0.085 EUR
915+0.078 EUR
1000+0.075 EUR
2500+0.071 EUR
Mindestbestellmenge: 417
Im Einkaufswagen  Stück im Wert von  UAH
PJSD05TM_R1_00001 PanJit Semiconductor PJSD05_SERIES.pdf Category: Protection diodes - arrays
Description: Diode: TVS; SOD923
Type of diode: TVS
Mounting: SMD
Case: SOD923
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJSD05TS-AU_R1_000A1 PJSD05TS-AU_R1_000A1 PanJit Semiconductor PJSD03TS-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 120W; 6V; 5A; unidirectional; SOD523; reel,tape; 110pF
Mounting: SMD
Case: SOD523
Capacitance: 110pF
Leakage current: 5µA
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Peak pulse power dissipation: 120W
Application: automotive industry
Version: ESD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
auf Bestellung 4768 Stücke:
Lieferzeit 14-21 Tag (e)
334+0.21 EUR
468+0.15 EUR
618+0.12 EUR
695+0.1 EUR
747+0.096 EUR
1000+0.093 EUR
2500+0.087 EUR
Mindestbestellmenge: 334
Im Einkaufswagen  Stück im Wert von  UAH
PJSD05TS-AU_R1_000A1 PJSD05TS-AU_R1_000A1 PanJit Semiconductor PJSD03TS-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 120W; 6V; 5A; unidirectional; SOD523; reel,tape; 110pF
Mounting: SMD
Case: SOD523
Capacitance: 110pF
Leakage current: 5µA
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Peak pulse power dissipation: 120W
Application: automotive industry
Version: ESD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4768 Stücke:
Lieferzeit 7-14 Tag (e)
334+0.21 EUR
468+0.15 EUR
618+0.12 EUR
695+0.1 EUR
747+0.096 EUR
1000+0.093 EUR
2500+0.087 EUR
Mindestbestellmenge: 334
Im Einkaufswagen  Stück im Wert von  UAH
PJSD05W_R1_00001 PanJit Semiconductor PJSD03W_SERIES.pdf Category: Protection diodes - arrays
Description: Diode: TVS; SOD323
Type of diode: TVS
Mounting: SMD
Case: SOD323
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJSD07TS-AU_R1_000A1 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; SOD523
Mounting: SMD
Case: SOD523
Application: automotive industry
Type of diode: TVS
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJSD08TS-AU_R1_007A1 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; SOD523
Mounting: SMD
Case: SOD523
Application: automotive industry
Type of diode: TVS
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMH060N65FR2_T0_00601 PJMH060N65FR2
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 58.3A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 58.3A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMH074N60FRCH_T0_00601 PJMH074N60FRCH.pdf
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMH074N60FRC_T0_00601 PJMH074N60FRC.pdf
PJMH074N60FRC_T0_00601
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; Idm: 117A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Case: TO247AD-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 74mΩ
Pulsed drain current: 117A
Power dissipation: 446W
Gate charge: 84nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMH080N65FR2_T0_00601 PJMH080N65FR2
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMH099N60EC_T0_00601 PJMH099N60EC.pdf
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMH120N60EC_T0_00601 PJMH120N60EC.pdf
PJMH120N60EC_T0_00601
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 51nC
Produkt ist nicht verfügbar
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PJMH125N60FRC_T0_00601 PJMH125N60FRC
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO247AD-3
Polarisation: unipolar
Drain current: 30A
Gate-source voltage: 30V
Case: TO247AD-3
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMH190N60E1_T0_00601 PJMH190N60E1.pdf
Hersteller: PanJit Semiconductor
PJMH190N60E1-T0 THT N channel transistors
auf Bestellung 28 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
13+5.56 EUR
28+2.56 EUR
1020+1.96 EUR
Mindestbestellmenge: 13
Im Einkaufswagen  Stück im Wert von  UAH
PJMH190N65FR2_T0_00601 PJMH190N65FR2
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.7A
Case: TO247AD-3
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMK040N60EC_T0_00201 PJMK040N60EC.pdf
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 71A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 71A
Case: TO247AD-3
Gate-source voltage: 40V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMK074N60FRCH_T0_00201 PJMK074N60FRCH.pdf
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Case: TO247AD-3
Gate-source voltage: 74V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMP060N65FR2_T0_00601 PJMP060N65FR2
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 58.3A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 58.3A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMP080N65FR2_T0_00601 PJMP080N65FR2
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJMP099N60EC_T0_00601 PJMP099N60EC.pdf
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 39A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 39A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMP120N60EC_T0_00001 PJMP120N60EC.pdf
PJMP120N60EC_T0_00001
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 51nC
Pulsed drain current: 69A
Anzahl je Verpackung: 1 Stücke
auf Bestellung 86 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
16+4.48 EUR
18+4 EUR
50+3.36 EUR
100+3.02 EUR
250+2.79 EUR
500+2.67 EUR
1000+2.4 EUR
Mindestbestellmenge: 16
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PJMP120N60EC_T0_00001 PJMP120N60EC.pdf
PJMP120N60EC_T0_00001
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 51nC
Pulsed drain current: 69A
auf Bestellung 86 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
16+4.48 EUR
18+4 EUR
50+3.36 EUR
Mindestbestellmenge: 16
Im Einkaufswagen  Stück im Wert von  UAH
PJMP125N60FRC_T0_00601 PJMP125N60FRC.pdf
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO220AB
Polarisation: unipolar
Drain current: 30A
Gate-source voltage: 30V
Case: TO220AB
Drain-source voltage: 600V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: THT
Produkt ist nicht verfügbar
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PJMP190N65FR2_T0_00601 PJMP190N65FR2
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.7A
Case: TO220AB
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJMP210N65EC_T0_00601 PJMP210N65EC.pdf
PJMP210N65EC_T0_00601
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 150W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42A
Gate charge: 34nC
Produkt ist nicht verfügbar
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PJMP360N60EC_T0_00001 PJMP360N60EC.pdf
PJMP360N60EC_T0_00001
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO220ABL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO220ABL
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJP125N06SA-AU_T0_006A1 PJP125N06SA-AU.pdf
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 215A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 215A
Case: TO220AB
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJP18N20_T0_00001 PJx18N20.pdf
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; TO220AB
Case: TO220AB
Mounting: THT
Drain current: 18A
Gate-source voltage: 20V
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Produkt ist nicht verfügbar
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PJP75N06SA-AU_T0_006A1 PJP75N06SA-AU.pdf
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 64A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 64A
Case: TO220AB
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJQ1905_R1_00201
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: P-MOSFET; unipolar; 60V; 0.5A; Idm: 1A; 500mW; DFN1006-3
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.5A
Pulsed drain current: 1A
Power dissipation: 0.5W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 13Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJQ1906_R1_00201
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.3A
Case: DFN1006-3
Gate-source voltage: 10V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJQ1908-AU_R1_002A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 900mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.9W
Case: DFN1006-3
Gate-source voltage: ±20V
On-state resistance: 1.45Ω
Mounting: SMD
Gate charge: 0.95nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJQ1916_R1_00201 PJQ1916.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 950mA; DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.95A
Case: DFN1006-3
Gate-source voltage: 8V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJQ1916_S1_00201
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 950mA; DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.95A
Case: DFN1006-3
Gate-source voltage: 8V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJQ2460-AU_R1_000A1 PJQ2460-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; Idm: 12.8A; 2.4W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Pulsed drain current: 12.8A
Power dissipation: 2.4W
Case: DFN2020B-6
Gate-source voltage: ±20V
On-state resistance: 90mΩ
Mounting: SMD
Gate charge: 9.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJQ4433EP_R2_00201
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -62A; Idm: -195A; 21.7W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -62A
Pulsed drain current: -195A
Power dissipation: 21.7W
Case: DFN3333-8
Gate-source voltage: ±25V
On-state resistance: 8.8mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJQ4435EP_R2_00201 PJQ4435EP.pdf
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -41A; Idm: -138A; 13.5W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -41A
Pulsed drain current: -138A
Power dissipation: 13.5W
Case: DFN3333-8
Gate-source voltage: ±25V
On-state resistance: 12.5mΩ
Mounting: SMD
Gate charge: 34nC
Kind of package: reel
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJQ4468AP-AU_R2_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 18A; DFN3333-8
Kind of package: reel; tape
Application: automotive industry
Case: DFN3333-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Drain current: 18A
Gate-source voltage: 20V
Drain-source voltage: 60V
Produkt ist nicht verfügbar
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PJQ4524P-AU_R2_002A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 320A; 22.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Pulsed drain current: 320A
Power dissipation: 22.7W
Case: DFN3333-8
Gate-source voltage: ±20V
On-state resistance: 4.4mΩ
Mounting: SMD
Gate charge: 21nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJQ4540S6CP-AU_R2_002A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 168A; DFN3333-8
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 40V
Drain current: 168A
Application: automotive industry
Kind of package: reel; tape
Case: DFN3333-8
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJQ4540S6VCP-AU_R2_002A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 160A; DFN3333-8
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 40V
Drain current: 160A
Application: automotive industry
Kind of package: reel; tape
Case: DFN3333-8
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJQ4546VP-AU_R2_002A1 PJQ4546VP-AU.pdf
PJQ4546VP-AU_R2_002A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 61A; Idm: 244A; 42W; DFN3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 61A
Pulsed drain current: 244A
Power dissipation: 42W
Case: DFN3333-8
Gate-source voltage: ±20V
On-state resistance: 7.7mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJQ5453E-AU_R2_002A1 PJQ5453E-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: P-MOSFET; unipolar; 40V; 16A; DFN5060-8
Case: DFN5060-8
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain current: 16A
Gate-source voltage: 25V
Drain-source voltage: 40V
Application: automotive industry
Produkt ist nicht verfügbar
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PJQ5458A-AU_R2_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 16A; DFN5060-8
Application: automotive industry
Kind of package: reel; tape
Case: DFN5060-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 16A
Gate-source voltage: 20V
Drain-source voltage: 60V
Produkt ist nicht verfügbar
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PJQ5474A_R2_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 18A; DFN5060-8
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Drain current: 18A
Gate-source voltage: 20V
Drain-source voltage: 100V
Polarisation: unipolar
Produkt ist nicht verfügbar
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PJQ5528-AU_R2_002A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 244A; 15.6W
Kind of package: reel; tape
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 11nC
On-state resistance: 6mΩ
Power dissipation: 15.6W
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 61A
Pulsed drain current: 244A
Application: automotive industry
Produkt ist nicht verfügbar
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PJQ5528S6-AU_R2_002A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 67A; DFN5060-8
Kind of package: reel; tape
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 30V
Drain current: 67A
Application: automotive industry
Produkt ist nicht verfügbar
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PJQ5528_R2_00201
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; DFN5060-8
Kind of package: reel; tape
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 30V
Drain current: 61A
Produkt ist nicht verfügbar
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PJQ5544-AU_R2_002A1 PJQ5544-AU.pdf
PJQ5544-AU_R2_002A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 520A; 100W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 520A
Power dissipation: 100W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 1952 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.83 EUR
58+1.25 EUR
100+0.9 EUR
250+0.81 EUR
500+0.75 EUR
1000+0.7 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5544-AU_R2_002A1 PJQ5544-AU.pdf
PJQ5544-AU_R2_002A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 520A; 100W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 520A
Power dissipation: 100W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1952 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
40+1.83 EUR
58+1.25 EUR
100+0.9 EUR
250+0.81 EUR
500+0.75 EUR
1000+0.7 EUR
3000+0.64 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5544V-AU_R2_002A1 PJQ5544V-AU.pdf
PJQ5544V-AU_R2_002A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 480A; 94W; DFN5060-8
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Gate charge: 34nC
On-state resistance: 4.6mΩ
Gate-source voltage: ±20V
Power dissipation: 94W
Drain-source voltage: 40V
Drain current: 120A
Pulsed drain current: 480A
Polarisation: unipolar
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
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PJQ5546V-AU_R2_002A1 PJQ5546V-AU.pdf
PJQ5546V-AU_R2_002A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 79A; Idm: 316A; 65W; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 79A
Pulsed drain current: 316A
Power dissipation: 65W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJQ5948V-AU_R2_002A1 PJQ5948V-AU.pdf
PJQ5948V-AU_R2_002A1
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 35A; Idm: 140A; 32W
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 35A
Pulsed drain current: 140A
Power dissipation: 32W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 17mΩ
Mounting: SMD
Gate charge: 9.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJS6421_S1_00001 PJS6421.pdf
Hersteller: PanJit Semiconductor
PJS6421-S1 SMD P channel transistors
auf Bestellung 2941 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
141+0.51 EUR
496+0.14 EUR
24000+0.13 EUR
Mindestbestellmenge: 141
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PJS6601_S1_00001
PJS6601_S1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 4.1/-3.1A; 1.25W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 4.1/-3.1A
Power dissipation: 1.25W
Case: SOT23-6
Gate-source voltage: ±12V
On-state resistance: 95/190mΩ
Mounting: SMD
Gate charge: 4.6/5.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2648 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
162+0.44 EUR
234+0.31 EUR
307+0.23 EUR
345+0.21 EUR
500+0.19 EUR
1000+0.17 EUR
3000+0.15 EUR
Mindestbestellmenge: 162
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PJS6601_S1_00001
PJS6601_S1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 4.1/-3.1A; 1.25W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 4.1/-3.1A
Power dissipation: 1.25W
Case: SOT23-6
Gate-source voltage: ±12V
On-state resistance: 95/190mΩ
Mounting: SMD
Gate charge: 4.6/5.4nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2648 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
234+0.31 EUR
307+0.23 EUR
345+0.21 EUR
500+0.19 EUR
1000+0.17 EUR
Mindestbestellmenge: 162
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PJS6839_S1_00001 PJS6839.pdf
PJS6839_S1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -300mA; Idm: -1A; 500mW
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1A
Drain current: -0.3A
Gate charge: 1.1nC
Power dissipation: 0.5W
On-state resistance: 13Ω
Gate-source voltage: ±20V
Case: SOT23-6
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2949 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
179+0.4 EUR
261+0.27 EUR
427+0.17 EUR
903+0.079 EUR
957+0.075 EUR
30000+0.074 EUR
Mindestbestellmenge: 179
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PJS6839_S1_00001 PJS6839.pdf
PJS6839_S1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -300mA; Idm: -1A; 500mW
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1A
Drain current: -0.3A
Gate charge: 1.1nC
Power dissipation: 0.5W
On-state resistance: 13Ω
Gate-source voltage: ±20V
Case: SOT23-6
auf Bestellung 2949 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
261+0.27 EUR
427+0.17 EUR
903+0.079 EUR
957+0.075 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
PJSD03TS-AU_R1_000A1 PJSD03TS-AU_SERIES.pdf
PJSD03TS-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 120W; 4V; 5A; unidirectional; SOD523; reel,tape; 200pF
Mounting: SMD
Case: SOD523
Capacitance: 200pF
Leakage current: 0.2mA
Max. forward impulse current: 5A
Max. off-state voltage: 3.3V
Breakdown voltage: 4V
Peak pulse power dissipation: 120W
Application: automotive industry
Version: ESD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
auf Bestellung 4600 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
569+0.13 EUR
762+0.094 EUR
845+0.085 EUR
915+0.078 EUR
1000+0.075 EUR
2500+0.071 EUR
Mindestbestellmenge: 417
Im Einkaufswagen  Stück im Wert von  UAH
PJSD03TS-AU_R1_000A1 PJSD03TS-AU_SERIES.pdf
PJSD03TS-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 120W; 4V; 5A; unidirectional; SOD523; reel,tape; 200pF
Mounting: SMD
Case: SOD523
Capacitance: 200pF
Leakage current: 0.2mA
Max. forward impulse current: 5A
Max. off-state voltage: 3.3V
Breakdown voltage: 4V
Peak pulse power dissipation: 120W
Application: automotive industry
Version: ESD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4600 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
417+0.17 EUR
569+0.13 EUR
762+0.094 EUR
845+0.085 EUR
915+0.078 EUR
1000+0.075 EUR
2500+0.071 EUR
Mindestbestellmenge: 417
Im Einkaufswagen  Stück im Wert von  UAH
PJSD05TM_R1_00001 PJSD05_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOD923
Type of diode: TVS
Mounting: SMD
Case: SOD923
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJSD05TS-AU_R1_000A1 PJSD03TS-AU_SERIES.pdf
PJSD05TS-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 120W; 6V; 5A; unidirectional; SOD523; reel,tape; 110pF
Mounting: SMD
Case: SOD523
Capacitance: 110pF
Leakage current: 5µA
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Peak pulse power dissipation: 120W
Application: automotive industry
Version: ESD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
auf Bestellung 4768 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
468+0.15 EUR
618+0.12 EUR
695+0.1 EUR
747+0.096 EUR
1000+0.093 EUR
2500+0.087 EUR
Mindestbestellmenge: 334
Im Einkaufswagen  Stück im Wert von  UAH
PJSD05TS-AU_R1_000A1 PJSD03TS-AU_SERIES.pdf
PJSD05TS-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 120W; 6V; 5A; unidirectional; SOD523; reel,tape; 110pF
Mounting: SMD
Case: SOD523
Capacitance: 110pF
Leakage current: 5µA
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Peak pulse power dissipation: 120W
Application: automotive industry
Version: ESD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4768 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
334+0.21 EUR
468+0.15 EUR
618+0.12 EUR
695+0.1 EUR
747+0.096 EUR
1000+0.093 EUR
2500+0.087 EUR
Mindestbestellmenge: 334
Im Einkaufswagen  Stück im Wert von  UAH
PJSD05W_R1_00001 PJSD03W_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOD323
Type of diode: TVS
Mounting: SMD
Case: SOD323
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJSD07TS-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOD523
Mounting: SMD
Case: SOD523
Application: automotive industry
Type of diode: TVS
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJSD08TS-AU_R1_007A1
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOD523
Mounting: SMD
Case: SOD523
Application: automotive industry
Type of diode: TVS
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
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