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PJQ5528-AU_R2_002A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 244A; 15.6W
Kind of package: reel; tape
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 11nC
On-state resistance: 6mΩ
Power dissipation: 15.6W
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 61A
Pulsed drain current: 244A
Application: automotive industry
Produkt ist nicht verfügbar
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PJQ5528S6-AU_R2_002A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 67A; DFN5060-8
Kind of package: reel; tape
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 30V
Drain current: 67A
Application: automotive industry
Produkt ist nicht verfügbar
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PJQ5528_R2_00201 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; DFN5060-8
Kind of package: reel; tape
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 30V
Drain current: 61A
Produkt ist nicht verfügbar
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PJQ5544-AU_R2_002A1 PJQ5544-AU_R2_002A1 PanJit Semiconductor PJQ5544-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 520A; 100W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 520A
Power dissipation: 100W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 1952 Stücke:
Lieferzeit 14-21 Tag (e)
40+1.83 EUR
58+1.25 EUR
100+0.9 EUR
250+0.81 EUR
500+0.75 EUR
1000+0.7 EUR
Mindestbestellmenge: 40
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PJQ5544-AU_R2_002A1 PJQ5544-AU_R2_002A1 PanJit Semiconductor PJQ5544-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 520A; 100W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 520A
Power dissipation: 100W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1952 Stücke:
Lieferzeit 7-14 Tag (e)
40+1.83 EUR
58+1.25 EUR
100+0.9 EUR
250+0.81 EUR
500+0.75 EUR
1000+0.7 EUR
3000+0.64 EUR
Mindestbestellmenge: 40
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PJQ5546V-AU_R2_002A1 PJQ5546V-AU_R2_002A1 PanJit Semiconductor PJQ5546V-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 79A; Idm: 316A; 65W; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 79A
Pulsed drain current: 316A
Power dissipation: 65W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJS6421_S1_00001 PanJit Semiconductor PJS6421.pdf PJS6421-S1 SMD P channel transistors
auf Bestellung 2941 Stücke:
Lieferzeit 7-14 Tag (e)
141+0.51 EUR
496+0.14 EUR
24000+0.13 EUR
Mindestbestellmenge: 141
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PJS6601_S1_00001 PJS6601_S1_00001 PanJit Semiconductor Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 4.1/-3.1A; 1.25W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 4.1/-3.1A
Power dissipation: 1.25W
Case: SOT23-6
Gate-source voltage: ±12V
On-state resistance: 95/190mΩ
Mounting: SMD
Gate charge: 4.6/5.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2648 Stücke:
Lieferzeit 7-14 Tag (e)
162+0.44 EUR
234+0.31 EUR
307+0.23 EUR
345+0.21 EUR
500+0.19 EUR
1000+0.17 EUR
3000+0.15 EUR
Mindestbestellmenge: 162
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PJS6601_S1_00001 PJS6601_S1_00001 PanJit Semiconductor Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 4.1/-3.1A; 1.25W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 4.1/-3.1A
Power dissipation: 1.25W
Case: SOT23-6
Gate-source voltage: ±12V
On-state resistance: 95/190mΩ
Mounting: SMD
Gate charge: 4.6/5.4nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2648 Stücke:
Lieferzeit 14-21 Tag (e)
162+0.44 EUR
234+0.31 EUR
307+0.23 EUR
345+0.21 EUR
500+0.19 EUR
1000+0.17 EUR
Mindestbestellmenge: 162
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PJS6839_S1_00001 PanJit Semiconductor PJS6839.pdf PJS6839-S1 Multi channel transistors
auf Bestellung 2736 Stücke:
Lieferzeit 7-14 Tag (e)
169+0.43 EUR
900+0.08 EUR
951+0.075 EUR
Mindestbestellmenge: 169
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PJSD03TS-AU_R1_000A1 PJSD03TS-AU_R1_000A1 PanJit Semiconductor PJSD03TS-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 120W; 4V; 5A; unidirectional; SOD523; reel,tape; 200pF
Mounting: SMD
Case: SOD523
Capacitance: 200pF
Leakage current: 0.2mA
Max. forward impulse current: 5A
Max. off-state voltage: 3.3V
Breakdown voltage: 4V
Peak pulse power dissipation: 120W
Application: automotive industry
Version: ESD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
auf Bestellung 4600 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.17 EUR
569+0.13 EUR
762+0.094 EUR
845+0.085 EUR
915+0.078 EUR
1000+0.075 EUR
2500+0.071 EUR
Mindestbestellmenge: 417
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PJSD03TS-AU_R1_000A1 PJSD03TS-AU_R1_000A1 PanJit Semiconductor PJSD03TS-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 120W; 4V; 5A; unidirectional; SOD523; reel,tape; 200pF
Mounting: SMD
Case: SOD523
Capacitance: 200pF
Leakage current: 0.2mA
Max. forward impulse current: 5A
Max. off-state voltage: 3.3V
Breakdown voltage: 4V
Peak pulse power dissipation: 120W
Application: automotive industry
Version: ESD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4600 Stücke:
Lieferzeit 7-14 Tag (e)
417+0.17 EUR
569+0.13 EUR
762+0.094 EUR
845+0.085 EUR
915+0.078 EUR
1000+0.075 EUR
2500+0.071 EUR
Mindestbestellmenge: 417
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PJSD05TM_R1_00001 PanJit Semiconductor PJSD05_SERIES.pdf Category: Protection diodes - arrays
Description: Diode: TVS; SOD923
Type of diode: TVS
Mounting: SMD
Case: SOD923
Produkt ist nicht verfügbar
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PJSD05TS-AU_R1_000A1 PJSD05TS-AU_R1_000A1 PanJit Semiconductor PJSD03TS-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 120W; 6V; 5A; unidirectional; SOD523; reel,tape; 110pF
Mounting: SMD
Case: SOD523
Capacitance: 110pF
Leakage current: 5µA
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Peak pulse power dissipation: 120W
Application: automotive industry
Version: ESD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
auf Bestellung 4768 Stücke:
Lieferzeit 14-21 Tag (e)
334+0.21 EUR
468+0.15 EUR
618+0.12 EUR
695+0.1 EUR
747+0.096 EUR
1000+0.093 EUR
2500+0.087 EUR
Mindestbestellmenge: 334
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PJSD05TS-AU_R1_000A1 PJSD05TS-AU_R1_000A1 PanJit Semiconductor PJSD03TS-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 120W; 6V; 5A; unidirectional; SOD523; reel,tape; 110pF
Mounting: SMD
Case: SOD523
Capacitance: 110pF
Leakage current: 5µA
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Peak pulse power dissipation: 120W
Application: automotive industry
Version: ESD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4768 Stücke:
Lieferzeit 7-14 Tag (e)
334+0.21 EUR
468+0.15 EUR
618+0.12 EUR
695+0.1 EUR
747+0.096 EUR
1000+0.093 EUR
2500+0.087 EUR
Mindestbestellmenge: 334
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PJSD05W_R1_00001 PanJit Semiconductor PJSD03W_SERIES.pdf Category: Protection diodes - arrays
Description: Diode: TVS; SOD323
Type of diode: TVS
Mounting: SMD
Case: SOD323
Produkt ist nicht verfügbar
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PJSD07TS-AU_R1_000A1 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; SOD523
Mounting: SMD
Case: SOD523
Application: automotive industry
Type of diode: TVS
Produkt ist nicht verfügbar
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PJSD08TS-AU_R1_007A1 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; SOD523
Mounting: SMD
Case: SOD523
Application: automotive industry
Type of diode: TVS
Produkt ist nicht verfügbar
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PJSD12TS-AU_R1_000A1 PanJit Semiconductor PJSD03TS-AU_SERIES.pdf Category: Protection diodes - arrays
Description: Diode: TVS; SOD523
Mounting: SMD
Case: SOD523
Application: automotive industry
Type of diode: TVS
Produkt ist nicht verfügbar
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PJSD15TS-AU_R1_000A1 PanJit Semiconductor PJSD15TS-AU_SERIES.pdf Category: Protection diodes - arrays
Description: Diode: TVS; SOD523
Mounting: SMD
Case: SOD523
Application: automotive industry
Type of diode: TVS
Produkt ist nicht verfügbar
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PJSD15W_R1_00001 PanJit Semiconductor PJSD03W_SERIES.pdf Category: Protection diodes - arrays
Description: Diode: TVS; SOD323
Type of diode: TVS
Mounting: SMD
Case: SOD323
Produkt ist nicht verfügbar
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PJSD24TS-AU_R1_000A1 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; SOD523
Mounting: SMD
Case: SOD523
Application: automotive industry
Type of diode: TVS
Produkt ist nicht verfügbar
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PJSD24TS_R1_00001 PJSD24TS_R1_00001 PanJit Semiconductor PJSD03TS_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 120W; 26.7V; unidirectional; SOD523; reel,tape; 25pF
Type of diode: TVS
Case: SOD523
Mounting: SMD
Max. off-state voltage: 24V
Semiconductor structure: unidirectional
Capacitance: 25pF
Leakage current: 5µA
Kind of package: reel; tape
Breakdown voltage: 26.7V
Peak pulse power dissipation: 120W
Version: ESD
Produkt ist nicht verfügbar
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PJSD36TS-AU_R1_000A1 PanJit Semiconductor PJSD03TS-AU_SERIES.pdf Category: Protection diodes - arrays
Description: Diode: TVS; SOD523
Mounting: SMD
Case: SOD523
Application: automotive industry
Type of diode: TVS
Produkt ist nicht verfügbar
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PJSD36W_R1_00001 PanJit Semiconductor PJSD36W-R1 Unidirectional TVS SMD diodes
auf Bestellung 4635 Stücke:
Lieferzeit 7-14 Tag (e)
170+0.42 EUR
794+0.09 EUR
848+0.084 EUR
10000+0.083 EUR
Mindestbestellmenge: 170
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PJT138K-AU_R1_000A1 PanJit Semiconductor PJT138K-AU-R1 Multi channel transistors
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
211+0.34 EUR
861+0.083 EUR
911+0.079 EUR
3000+0.076 EUR
Mindestbestellmenge: 211
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PJT7002KDW_R1_00501 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30V; 300mA; SOT363
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.3A
Case: SOT363
Gate-source voltage: 10V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJT7600_R1_00001 PJT7600_R1_00001 PanJit Semiconductor PJT7600.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW
Case: SOT363
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N/P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 1.6/2.2nC
Power dissipation: 0.35W
On-state resistance: 400/600mΩ
Drain current: 1A/-700mA
Gate-source voltage: ±8V
Drain-source voltage: 20/-20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2685 Stücke:
Lieferzeit 7-14 Tag (e)
114+0.63 EUR
181+0.4 EUR
283+0.25 EUR
500+0.19 EUR
1000+0.17 EUR
3000+0.15 EUR
6000+0.13 EUR
Mindestbestellmenge: 114
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PJT7600_R1_00001 PJT7600_R1_00001 PanJit Semiconductor PJT7600.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW
Case: SOT363
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N/P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 1.6/2.2nC
Power dissipation: 0.35W
On-state resistance: 400/600mΩ
Drain current: 1A/-700mA
Gate-source voltage: ±8V
Drain-source voltage: 20/-20V
auf Bestellung 2685 Stücke:
Lieferzeit 14-21 Tag (e)
114+0.63 EUR
181+0.4 EUR
283+0.25 EUR
500+0.19 EUR
1000+0.17 EUR
Mindestbestellmenge: 114
Im Einkaufswagen  Stück im Wert von  UAH
PJT7603_R1_00001 PanJit Semiconductor PJT7603.pdf PJT7603-R1 Multi channel transistors
auf Bestellung 2880 Stücke:
Lieferzeit 7-14 Tag (e)
207+0.35 EUR
861+0.083 EUR
911+0.079 EUR
Mindestbestellmenge: 207
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PJT7605-AU_R1_000A1 PanJit Semiconductor Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Kind of package: reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Type of transistor: N/P-MOSFET
Case: SOT363
Polarisation: unipolar
Gate charge: 700pC/1.1nC
Drain current: 250/-250mA
Power dissipation: 0.35W
On-state resistance: 3/4Ω
Gate-source voltage: ±20V
Drain-source voltage: 60/-60V
Produkt ist nicht verfügbar
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PJT7800_R1_00001 PJT7800_R1_00001 PanJit Semiconductor PJT7800.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT363
Case: SOT363
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate charge: 1.6nC
Power dissipation: 0.35W
On-state resistance: 0.4Ω
Drain current: 1A
Pulsed drain current: 4A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5978 Stücke:
Lieferzeit 7-14 Tag (e)
179+0.4 EUR
271+0.26 EUR
516+0.14 EUR
596+0.12 EUR
1000+0.11 EUR
3000+0.09 EUR
Mindestbestellmenge: 179
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PJT7800_R1_00001 PJT7800_R1_00001 PanJit Semiconductor PJT7800.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT363
Case: SOT363
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate charge: 1.6nC
Power dissipation: 0.35W
On-state resistance: 0.4Ω
Drain current: 1A
Pulsed drain current: 4A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Kind of package: reel; tape
auf Bestellung 5978 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.4 EUR
271+0.26 EUR
516+0.14 EUR
596+0.12 EUR
1000+0.11 EUR
3000+0.09 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
PJT7801_R1_00001 PanJit Semiconductor PJT7801.pdf PJT7801-R1 Multi channel transistors
auf Bestellung 2845 Stücke:
Lieferzeit 7-14 Tag (e)
122+0.59 EUR
715+0.1 EUR
758+0.094 EUR
Mindestbestellmenge: 122
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PJT7808_R1_00001 PanJit Semiconductor PJT7808.pdf Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -250mA
Gate-source voltage: 20V
Produkt ist nicht verfügbar
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PJT7838_R1_00001 PJT7838_R1_00001 PanJit Semiconductor PJT7838.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 400mA; Idm: 1.2A; 350mW
Kind of package: reel; tape
Type of transistor: N-MOSFET x2
Case: SOT363
Polarisation: unipolar
Gate charge: 0.95nC
Power dissipation: 0.35W
Drain current: 0.4A
Pulsed drain current: 1.2A
On-state resistance: 6Ω
Gate-source voltage: ±20V
Drain-source voltage: 50V
Kind of channel: enhancement
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7648 Stücke:
Lieferzeit 7-14 Tag (e)
136+0.53 EUR
217+0.33 EUR
348+0.21 EUR
500+0.15 EUR
1000+0.13 EUR
3000+0.11 EUR
Mindestbestellmenge: 136
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PJT7838_R1_00001 PJT7838_R1_00001 PanJit Semiconductor PJT7838.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 400mA; Idm: 1.2A; 350mW
Kind of package: reel; tape
Type of transistor: N-MOSFET x2
Case: SOT363
Polarisation: unipolar
Gate charge: 0.95nC
Power dissipation: 0.35W
Drain current: 0.4A
Pulsed drain current: 1.2A
On-state resistance: 6Ω
Gate-source voltage: ±20V
Drain-source voltage: 50V
Kind of channel: enhancement
Mounting: SMD
auf Bestellung 7648 Stücke:
Lieferzeit 14-21 Tag (e)
136+0.53 EUR
217+0.33 EUR
348+0.21 EUR
500+0.15 EUR
1000+0.13 EUR
3000+0.11 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
PJUSB05-4_R1_00001 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; SOT23-6L
Type of diode: TVS
Mounting: SMD
Case: SOT23-6L
Produkt ist nicht verfügbar
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PJUSB208_R1_00001 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; SOT23-6L
Type of diode: TVS
Mounting: SMD
Case: SOT23-6L
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJUSB208_S1_00001 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; SOT23-6L
Type of diode: TVS
Mounting: SMD
Case: SOT23-6L
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW4N06A-AU_R2_000A1 PJW4N06A-AU_R2_000A1 PanJit Semiconductor PJW4N06A-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; Idm: 8A; 2.6W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Pulsed drain current: 8A
Power dissipation: 2.6W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW4N06A_R2_00001 PJW4N06A_R2_00001 PanJit Semiconductor PJW4N06A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 8A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW4P06A-AU_R2_000A1 PanJit Semiconductor PJW4P06A-AU.pdf PJW4P06A-AU-R2 SMD P channel transistors
auf Bestellung 3190 Stücke:
Lieferzeit 7-14 Tag (e)
82+0.88 EUR
288+0.25 EUR
304+0.24 EUR
Mindestbestellmenge: 82
Im Einkaufswagen  Stück im Wert von  UAH
PJW4P06A_R2_00001 PanJit Semiconductor PJW4P06A.pdf PJW4P06A-R2 SMD P channel transistors
auf Bestellung 865 Stücke:
Lieferzeit 7-14 Tag (e)
96+0.75 EUR
376+0.19 EUR
400+0.18 EUR
25000+0.17 EUR
Mindestbestellmenge: 96
Im Einkaufswagen  Stück im Wert von  UAH
PJX138K_R1_00001 PJX138K_R1_00001 PanJit Semiconductor Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; Idm: 1.2A; 223mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Pulsed drain current: 1.2A
Power dissipation: 223mW
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3935 Stücke:
Lieferzeit 7-14 Tag (e)
239+0.3 EUR
368+0.19 EUR
646+0.11 EUR
851+0.084 EUR
1000+0.08 EUR
Mindestbestellmenge: 239
Im Einkaufswagen  Stück im Wert von  UAH
PJX138K_R1_00001 PJX138K_R1_00001 PanJit Semiconductor Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; Idm: 1.2A; 223mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Pulsed drain current: 1.2A
Power dissipation: 223mW
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1nC
auf Bestellung 3935 Stücke:
Lieferzeit 14-21 Tag (e)
239+0.3 EUR
368+0.19 EUR
646+0.11 EUR
851+0.084 EUR
1000+0.08 EUR
Mindestbestellmenge: 239
Im Einkaufswagen  Stück im Wert von  UAH
PJX138L_R1_00002 PanJit Semiconductor Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 160mA; Idm: 0.8A; 223W
Mounting: SMD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Pulsed drain current: 0.8A
Drain current: 0.16A
Gate charge: 0.7nC
Power dissipation: 223W
On-state resistance: 4.2Ω
Gate-source voltage: ±20V
Case: SOT563
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJX8603_R1_00001 PJX8603_R1_00001 PanJit Semiconductor PJX8603.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 50/-60V; 360/-200mA; 300mW
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 50/-60V
Drain current: 360/-200mA
Power dissipation: 0.3W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 2.5/7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 0.95/1.1nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1927 Stücke:
Lieferzeit 7-14 Tag (e)
200+0.36 EUR
327+0.22 EUR
468+0.15 EUR
582+0.12 EUR
1000+0.11 EUR
4000+0.1 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
PJX8603_R1_00001 PJX8603_R1_00001 PanJit Semiconductor PJX8603.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 50/-60V; 360/-200mA; 300mW
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 50/-60V
Drain current: 360/-200mA
Power dissipation: 0.3W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 2.5/7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 0.95/1.1nC
auf Bestellung 1927 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.36 EUR
327+0.22 EUR
468+0.15 EUR
582+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
PJX8839_R1_00001 PanJit Semiconductor PJX8839.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJX8872B_R1_00001 PanJit Semiconductor PJX8872B.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PM808LL_R2_00601 PanJit Semiconductor Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 170A; M8
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 170A
Case: M8
Electrical mounting: SMT
Max. forward voltage: 0.95V
Produkt ist nicht verfügbar
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PMSM608_R2_00301 PanJit Semiconductor Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 150A; M6
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1V
Load current: 6A
Max. forward impulse current: 150A
Case: M6
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PS161M-D62_R1_00301 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; DFN1006-2
Case: DFN1006-2
Mounting: SMD
Type of diode: TVS
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PS5915-S26_S1_00301 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; SOT23-6L
Type of diode: TVS
Mounting: SMD
Case: SOT23-6L
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMB032N08NS1_R2_00601 PanJit Semiconductor PSMB032N08NS1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMB032N08NS1_T0_00601 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMB033N10NS2_R2_00201 PanJit Semiconductor PSMB033N10NS2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMN015N10NS2_R2_00201 PanJit Semiconductor 20230516171020ta7o3bGUZ1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 398A; Idm: 1592A; 250W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 398A
Pulsed drain current: 1592A
Power dissipation: 250W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMN028N10NS2_R2_00201 PanJit Semiconductor 20230516171020ta7o3bGUZ1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 240A; Idm: 960A; 167W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 240A
Pulsed drain current: 960A
Power dissipation: 167W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5528-AU_R2_002A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; Idm: 244A; 15.6W
Kind of package: reel; tape
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate charge: 11nC
On-state resistance: 6mΩ
Power dissipation: 15.6W
Gate-source voltage: ±20V
Drain-source voltage: 30V
Drain current: 61A
Pulsed drain current: 244A
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5528S6-AU_R2_002A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 67A; DFN5060-8
Kind of package: reel; tape
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 30V
Drain current: 67A
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5528_R2_00201
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 61A; DFN5060-8
Kind of package: reel; tape
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 30V
Drain current: 61A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5544-AU_R2_002A1 PJQ5544-AU.pdf
PJQ5544-AU_R2_002A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 520A; 100W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 520A
Power dissipation: 100W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 1952 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
40+1.83 EUR
58+1.25 EUR
100+0.9 EUR
250+0.81 EUR
500+0.75 EUR
1000+0.7 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5544-AU_R2_002A1 PJQ5544-AU.pdf
PJQ5544-AU_R2_002A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 130A; Idm: 520A; 100W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 130A
Pulsed drain current: 520A
Power dissipation: 100W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 4.3mΩ
Mounting: SMD
Gate charge: 41nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1952 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
40+1.83 EUR
58+1.25 EUR
100+0.9 EUR
250+0.81 EUR
500+0.75 EUR
1000+0.7 EUR
3000+0.64 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
PJQ5546V-AU_R2_002A1 PJQ5546V-AU.pdf
PJQ5546V-AU_R2_002A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 79A; Idm: 316A; 65W; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 79A
Pulsed drain current: 316A
Power dissipation: 65W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJS6421_S1_00001 PJS6421.pdf
Hersteller: PanJit Semiconductor
PJS6421-S1 SMD P channel transistors
auf Bestellung 2941 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
141+0.51 EUR
496+0.14 EUR
24000+0.13 EUR
Mindestbestellmenge: 141
Im Einkaufswagen  Stück im Wert von  UAH
PJS6601_S1_00001
PJS6601_S1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 4.1/-3.1A; 1.25W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 4.1/-3.1A
Power dissipation: 1.25W
Case: SOT23-6
Gate-source voltage: ±12V
On-state resistance: 95/190mΩ
Mounting: SMD
Gate charge: 4.6/5.4nC
Kind of package: reel; tape
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2648 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
162+0.44 EUR
234+0.31 EUR
307+0.23 EUR
345+0.21 EUR
500+0.19 EUR
1000+0.17 EUR
3000+0.15 EUR
Mindestbestellmenge: 162
Im Einkaufswagen  Stück im Wert von  UAH
PJS6601_S1_00001
PJS6601_S1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 4.1/-3.1A; 1.25W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 4.1/-3.1A
Power dissipation: 1.25W
Case: SOT23-6
Gate-source voltage: ±12V
On-state resistance: 95/190mΩ
Mounting: SMD
Gate charge: 4.6/5.4nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2648 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
162+0.44 EUR
234+0.31 EUR
307+0.23 EUR
345+0.21 EUR
500+0.19 EUR
1000+0.17 EUR
Mindestbestellmenge: 162
Im Einkaufswagen  Stück im Wert von  UAH
PJS6839_S1_00001 PJS6839.pdf
Hersteller: PanJit Semiconductor
PJS6839-S1 Multi channel transistors
auf Bestellung 2736 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
169+0.43 EUR
900+0.08 EUR
951+0.075 EUR
Mindestbestellmenge: 169
Im Einkaufswagen  Stück im Wert von  UAH
PJSD03TS-AU_R1_000A1 PJSD03TS-AU_SERIES.pdf
PJSD03TS-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 120W; 4V; 5A; unidirectional; SOD523; reel,tape; 200pF
Mounting: SMD
Case: SOD523
Capacitance: 200pF
Leakage current: 0.2mA
Max. forward impulse current: 5A
Max. off-state voltage: 3.3V
Breakdown voltage: 4V
Peak pulse power dissipation: 120W
Application: automotive industry
Version: ESD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
auf Bestellung 4600 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
417+0.17 EUR
569+0.13 EUR
762+0.094 EUR
845+0.085 EUR
915+0.078 EUR
1000+0.075 EUR
2500+0.071 EUR
Mindestbestellmenge: 417
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PJSD03TS-AU_R1_000A1 PJSD03TS-AU_SERIES.pdf
PJSD03TS-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 120W; 4V; 5A; unidirectional; SOD523; reel,tape; 200pF
Mounting: SMD
Case: SOD523
Capacitance: 200pF
Leakage current: 0.2mA
Max. forward impulse current: 5A
Max. off-state voltage: 3.3V
Breakdown voltage: 4V
Peak pulse power dissipation: 120W
Application: automotive industry
Version: ESD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4600 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
417+0.17 EUR
569+0.13 EUR
762+0.094 EUR
845+0.085 EUR
915+0.078 EUR
1000+0.075 EUR
2500+0.071 EUR
Mindestbestellmenge: 417
Im Einkaufswagen  Stück im Wert von  UAH
PJSD05TM_R1_00001 PJSD05_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOD923
Type of diode: TVS
Mounting: SMD
Case: SOD923
Produkt ist nicht verfügbar
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PJSD05TS-AU_R1_000A1 PJSD03TS-AU_SERIES.pdf
PJSD05TS-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 120W; 6V; 5A; unidirectional; SOD523; reel,tape; 110pF
Mounting: SMD
Case: SOD523
Capacitance: 110pF
Leakage current: 5µA
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Peak pulse power dissipation: 120W
Application: automotive industry
Version: ESD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
auf Bestellung 4768 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
334+0.21 EUR
468+0.15 EUR
618+0.12 EUR
695+0.1 EUR
747+0.096 EUR
1000+0.093 EUR
2500+0.087 EUR
Mindestbestellmenge: 334
Im Einkaufswagen  Stück im Wert von  UAH
PJSD05TS-AU_R1_000A1 PJSD03TS-AU_SERIES.pdf
PJSD05TS-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 120W; 6V; 5A; unidirectional; SOD523; reel,tape; 110pF
Mounting: SMD
Case: SOD523
Capacitance: 110pF
Leakage current: 5µA
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Peak pulse power dissipation: 120W
Application: automotive industry
Version: ESD
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
Anzahl je Verpackung: 1 Stücke
auf Bestellung 4768 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
334+0.21 EUR
468+0.15 EUR
618+0.12 EUR
695+0.1 EUR
747+0.096 EUR
1000+0.093 EUR
2500+0.087 EUR
Mindestbestellmenge: 334
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PJSD05W_R1_00001 PJSD03W_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOD323
Type of diode: TVS
Mounting: SMD
Case: SOD323
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJSD07TS-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOD523
Mounting: SMD
Case: SOD523
Application: automotive industry
Type of diode: TVS
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJSD08TS-AU_R1_007A1
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOD523
Mounting: SMD
Case: SOD523
Application: automotive industry
Type of diode: TVS
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJSD12TS-AU_R1_000A1 PJSD03TS-AU_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOD523
Mounting: SMD
Case: SOD523
Application: automotive industry
Type of diode: TVS
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJSD15TS-AU_R1_000A1 PJSD15TS-AU_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOD523
Mounting: SMD
Case: SOD523
Application: automotive industry
Type of diode: TVS
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJSD15W_R1_00001 PJSD03W_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOD323
Type of diode: TVS
Mounting: SMD
Case: SOD323
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJSD24TS-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOD523
Mounting: SMD
Case: SOD523
Application: automotive industry
Type of diode: TVS
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJSD24TS_R1_00001 PJSD03TS_SERIES.pdf
PJSD24TS_R1_00001
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 120W; 26.7V; unidirectional; SOD523; reel,tape; 25pF
Type of diode: TVS
Case: SOD523
Mounting: SMD
Max. off-state voltage: 24V
Semiconductor structure: unidirectional
Capacitance: 25pF
Leakage current: 5µA
Kind of package: reel; tape
Breakdown voltage: 26.7V
Peak pulse power dissipation: 120W
Version: ESD
Produkt ist nicht verfügbar
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PJSD36TS-AU_R1_000A1 PJSD03TS-AU_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOD523
Mounting: SMD
Case: SOD523
Application: automotive industry
Type of diode: TVS
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJSD36W_R1_00001
Hersteller: PanJit Semiconductor
PJSD36W-R1 Unidirectional TVS SMD diodes
auf Bestellung 4635 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
170+0.42 EUR
794+0.09 EUR
848+0.084 EUR
10000+0.083 EUR
Mindestbestellmenge: 170
Im Einkaufswagen  Stück im Wert von  UAH
PJT138K-AU_R1_000A1
Hersteller: PanJit Semiconductor
PJT138K-AU-R1 Multi channel transistors
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
211+0.34 EUR
861+0.083 EUR
911+0.079 EUR
3000+0.076 EUR
Mindestbestellmenge: 211
Im Einkaufswagen  Stück im Wert von  UAH
PJT7002KDW_R1_00501
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30V; 300mA; SOT363
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.3A
Case: SOT363
Gate-source voltage: 10V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJT7600_R1_00001 PJT7600.pdf
PJT7600_R1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW
Case: SOT363
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N/P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 1.6/2.2nC
Power dissipation: 0.35W
On-state resistance: 400/600mΩ
Drain current: 1A/-700mA
Gate-source voltage: ±8V
Drain-source voltage: 20/-20V
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2685 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
114+0.63 EUR
181+0.4 EUR
283+0.25 EUR
500+0.19 EUR
1000+0.17 EUR
3000+0.15 EUR
6000+0.13 EUR
Mindestbestellmenge: 114
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PJT7600_R1_00001 PJT7600.pdf
PJT7600_R1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW
Case: SOT363
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N/P-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 1.6/2.2nC
Power dissipation: 0.35W
On-state resistance: 400/600mΩ
Drain current: 1A/-700mA
Gate-source voltage: ±8V
Drain-source voltage: 20/-20V
auf Bestellung 2685 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
114+0.63 EUR
181+0.4 EUR
283+0.25 EUR
500+0.19 EUR
1000+0.17 EUR
Mindestbestellmenge: 114
Im Einkaufswagen  Stück im Wert von  UAH
PJT7603_R1_00001 PJT7603.pdf
Hersteller: PanJit Semiconductor
PJT7603-R1 Multi channel transistors
auf Bestellung 2880 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
207+0.35 EUR
861+0.083 EUR
911+0.079 EUR
Mindestbestellmenge: 207
Im Einkaufswagen  Stück im Wert von  UAH
PJT7605-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 60/-60V
Kind of package: reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Version: ESD
Mounting: SMD
Type of transistor: N/P-MOSFET
Case: SOT363
Polarisation: unipolar
Gate charge: 700pC/1.1nC
Drain current: 250/-250mA
Power dissipation: 0.35W
On-state resistance: 3/4Ω
Gate-source voltage: ±20V
Drain-source voltage: 60/-60V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJT7800_R1_00001 PJT7800.pdf
PJT7800_R1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT363
Case: SOT363
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate charge: 1.6nC
Power dissipation: 0.35W
On-state resistance: 0.4Ω
Drain current: 1A
Pulsed drain current: 4A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Kind of package: reel; tape
Anzahl je Verpackung: 1 Stücke
auf Bestellung 5978 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
179+0.4 EUR
271+0.26 EUR
516+0.14 EUR
596+0.12 EUR
1000+0.11 EUR
3000+0.09 EUR
Mindestbestellmenge: 179
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PJT7800_R1_00001 PJT7800.pdf
PJT7800_R1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT363
Case: SOT363
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate charge: 1.6nC
Power dissipation: 0.35W
On-state resistance: 0.4Ω
Drain current: 1A
Pulsed drain current: 4A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Kind of package: reel; tape
auf Bestellung 5978 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
179+0.4 EUR
271+0.26 EUR
516+0.14 EUR
596+0.12 EUR
1000+0.11 EUR
3000+0.09 EUR
Mindestbestellmenge: 179
Im Einkaufswagen  Stück im Wert von  UAH
PJT7801_R1_00001 PJT7801.pdf
Hersteller: PanJit Semiconductor
PJT7801-R1 Multi channel transistors
auf Bestellung 2845 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
122+0.59 EUR
715+0.1 EUR
758+0.094 EUR
Mindestbestellmenge: 122
Im Einkaufswagen  Stück im Wert von  UAH
PJT7808_R1_00001 PJT7808.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -250mA
Gate-source voltage: 20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJT7838_R1_00001 PJT7838.pdf
PJT7838_R1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 400mA; Idm: 1.2A; 350mW
Kind of package: reel; tape
Type of transistor: N-MOSFET x2
Case: SOT363
Polarisation: unipolar
Gate charge: 0.95nC
Power dissipation: 0.35W
Drain current: 0.4A
Pulsed drain current: 1.2A
On-state resistance: 6Ω
Gate-source voltage: ±20V
Drain-source voltage: 50V
Kind of channel: enhancement
Mounting: SMD
Anzahl je Verpackung: 1 Stücke
auf Bestellung 7648 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
136+0.53 EUR
217+0.33 EUR
348+0.21 EUR
500+0.15 EUR
1000+0.13 EUR
3000+0.11 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
PJT7838_R1_00001 PJT7838.pdf
PJT7838_R1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 400mA; Idm: 1.2A; 350mW
Kind of package: reel; tape
Type of transistor: N-MOSFET x2
Case: SOT363
Polarisation: unipolar
Gate charge: 0.95nC
Power dissipation: 0.35W
Drain current: 0.4A
Pulsed drain current: 1.2A
On-state resistance: 6Ω
Gate-source voltage: ±20V
Drain-source voltage: 50V
Kind of channel: enhancement
Mounting: SMD
auf Bestellung 7648 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
136+0.53 EUR
217+0.33 EUR
348+0.21 EUR
500+0.15 EUR
1000+0.13 EUR
3000+0.11 EUR
Mindestbestellmenge: 136
Im Einkaufswagen  Stück im Wert von  UAH
PJUSB05-4_R1_00001
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23-6L
Type of diode: TVS
Mounting: SMD
Case: SOT23-6L
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJUSB208_R1_00001
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23-6L
Type of diode: TVS
Mounting: SMD
Case: SOT23-6L
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJUSB208_S1_00001
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23-6L
Type of diode: TVS
Mounting: SMD
Case: SOT23-6L
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW4N06A-AU_R2_000A1 PJW4N06A-AU.pdf
PJW4N06A-AU_R2_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; Idm: 8A; 2.6W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Pulsed drain current: 8A
Power dissipation: 2.6W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW4N06A_R2_00001 PJW4N06A.pdf
PJW4N06A_R2_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 8A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW4P06A-AU_R2_000A1 PJW4P06A-AU.pdf
Hersteller: PanJit Semiconductor
PJW4P06A-AU-R2 SMD P channel transistors
auf Bestellung 3190 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
82+0.88 EUR
288+0.25 EUR
304+0.24 EUR
Mindestbestellmenge: 82
Im Einkaufswagen  Stück im Wert von  UAH
PJW4P06A_R2_00001 PJW4P06A.pdf
Hersteller: PanJit Semiconductor
PJW4P06A-R2 SMD P channel transistors
auf Bestellung 865 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
96+0.75 EUR
376+0.19 EUR
400+0.18 EUR
25000+0.17 EUR
Mindestbestellmenge: 96
Im Einkaufswagen  Stück im Wert von  UAH
PJX138K_R1_00001
PJX138K_R1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; Idm: 1.2A; 223mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Pulsed drain current: 1.2A
Power dissipation: 223mW
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 3935 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
239+0.3 EUR
368+0.19 EUR
646+0.11 EUR
851+0.084 EUR
1000+0.08 EUR
Mindestbestellmenge: 239
Im Einkaufswagen  Stück im Wert von  UAH
PJX138K_R1_00001
PJX138K_R1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; Idm: 1.2A; 223mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Pulsed drain current: 1.2A
Power dissipation: 223mW
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 1nC
auf Bestellung 3935 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
239+0.3 EUR
368+0.19 EUR
646+0.11 EUR
851+0.084 EUR
1000+0.08 EUR
Mindestbestellmenge: 239
Im Einkaufswagen  Stück im Wert von  UAH
PJX138L_R1_00002
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 160mA; Idm: 0.8A; 223W
Mounting: SMD
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Pulsed drain current: 0.8A
Drain current: 0.16A
Gate charge: 0.7nC
Power dissipation: 223W
On-state resistance: 4.2Ω
Gate-source voltage: ±20V
Case: SOT563
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJX8603_R1_00001 PJX8603.pdf
PJX8603_R1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 50/-60V; 360/-200mA; 300mW
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 50/-60V
Drain current: 360/-200mA
Power dissipation: 0.3W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 2.5/7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 0.95/1.1nC
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1927 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
200+0.36 EUR
327+0.22 EUR
468+0.15 EUR
582+0.12 EUR
1000+0.11 EUR
4000+0.1 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
PJX8603_R1_00001 PJX8603.pdf
PJX8603_R1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 50/-60V; 360/-200mA; 300mW
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 50/-60V
Drain current: 360/-200mA
Power dissipation: 0.3W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 2.5/7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 0.95/1.1nC
auf Bestellung 1927 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
200+0.36 EUR
327+0.22 EUR
468+0.15 EUR
582+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 200
Im Einkaufswagen  Stück im Wert von  UAH
PJX8839_R1_00001 PJX8839.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJX8872B_R1_00001 PJX8872B.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PM808LL_R2_00601
Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 170A; M8
Type of bridge rectifier: single-phase
Max. off-state voltage: 0.8kV
Load current: 8A
Max. forward impulse current: 170A
Case: M8
Electrical mounting: SMT
Max. forward voltage: 0.95V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PMSM608_R2_00301
Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 150A; M6
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1V
Load current: 6A
Max. forward impulse current: 150A
Case: M6
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PS161M-D62_R1_00301
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1006-2
Case: DFN1006-2
Mounting: SMD
Type of diode: TVS
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PS5915-S26_S1_00301
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; SOT23-6L
Type of diode: TVS
Mounting: SMD
Case: SOT23-6L
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMB032N08NS1_R2_00601 PSMB032N08NS1.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PSMB032N08NS1_T0_00601
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PSMB033N10NS2_R2_00201 PSMB033N10NS2.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PSMN015N10NS2_R2_00201 20230516171020ta7o3bGUZ1.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 398A; Idm: 1592A; 250W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 398A
Pulsed drain current: 1592A
Power dissipation: 250W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhancement
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PSMN028N10NS2_R2_00201 20230516171020ta7o3bGUZ1.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 240A; Idm: 960A; 167W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 240A
Pulsed drain current: 960A
Power dissipation: 167W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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