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PJA3406_R1_00001 PJA3406_R1_00001 PanJit Semiconductor PJA3406.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.4A
Case: SOT23
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 1.25W
Gate charge: 5.8nC
On-state resistance: 70mΩ
Pulsed drain current: 17.6A
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360+0.24 EUR
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PJA3407E_R1_00501 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 360mA; SOT363
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Drain current: 0.36A
Gate-source voltage: 20V
Drain-source voltage: 50V
Kind of package: reel; tape
Case: SOT363
Kind of channel: enhancement
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PJA3407_R1_00001 PJA3407_R1_00001 PanJit Semiconductor PJA3407.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.8A
Pulsed drain current: -15.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
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527+0.17 EUR
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PJA3409_R1_00001 PJA3409_R1_00001 PanJit Semiconductor PJA3409.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -11.6A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.9A
Pulsed drain current: -11.6A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 9.8nC
Kind of package: reel; tape
Kind of channel: enhancement
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PJA3413_R1_00001 PJA3413_R1_00001 PanJit Semiconductor PJA3413.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -13.6A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.4A
Pulsed drain current: -13.6A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 146mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
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PJA3416AE_R1_00001 PJA3416AE_R1_00001 PanJit Semiconductor PJA3416AE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; Idm: 32A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Pulsed drain current: 32A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 8.6nC
Kind of package: reel; tape
Kind of channel: enhancement
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PJA3428_R1_00001 PJA3428_R1_00001 PanJit Semiconductor PJA3428.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.3A
Pulsed drain current: 0.6A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.9nC
Kind of package: reel; tape
Kind of channel: enhancement
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348+0.25 EUR
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PJA3433_R1_00001 PJA3433_R1_00001 PanJit Semiconductor PJA3433.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.1A
Pulsed drain current: -4.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.97Ω
Mounting: SMD
Gate charge: 1.6nC
Kind of package: reel; tape
Kind of channel: enhancement
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PJA3434_R1_00001 PJA3434_R1_00001 PanJit Semiconductor PJA3434.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.75A
Pulsed drain current: 1.5A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhancement
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PJA3435_R1_00001 PJA3435_R1_00001 PanJit Semiconductor PJA3435.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.5A
Pulsed drain current: -1A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhancement
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666+0.13 EUR
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PJA3436-AU_R1_000A1 PJA3436-AU_R1_000A1 PanJit Semiconductor PJA3436-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.2A
Pulsed drain current: 4.8A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 0.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJA3438-AU_R1_000A1 PJA3438-AU_R1_000A1 PanJit Semiconductor PJA3438-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 0.95nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJA3439-AU_R1_000A1 PJA3439-AU_R1_000A1 PanJit Semiconductor PJA3439-AU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -300mA; Idm: -1A; 500mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -300mA
Pulsed drain current: -1A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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622+0.13 EUR
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PJA3463_R1_00001 PJA3463_R1_00001 PanJit Semiconductor PJA3463.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.5A; Idm: -10A; 1.25W; SOT23
Mounting: SMD
Pulsed drain current: -10A
Power dissipation: 1.25W
Gate charge: 10nC
Polarisation: unipolar
Drain current: -2.5A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 0.13Ω
Produkt ist nicht verfügbar
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PJA3471_R1_00501 PJA3471_R1_00501 PanJit Semiconductor Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -900mA; Idm: -3.6A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.9A
Pulsed drain current: -3.6A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
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260+0.33 EUR
410+0.2 EUR
496+0.17 EUR
569+0.15 EUR
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PJB100N04S-AU_R2_002A1 PanJit Semiconductor PJB100N04S-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 161A; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 161A
Case: TO263
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJB100N04V-AU_R2_002A1 PanJit Semiconductor PJB100N04V-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 219A; TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 219A
Case: TO263AB
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJB120N03S-AU_R2_002A1 PanJit Semiconductor PJB120N03S-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 76A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 76A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJB140P04E7-AU_R2_002A1 PanJit Semiconductor Category: SMD P channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; DFN3333-8
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 22A
Drain-source voltage: 100V
Gate-source voltage: 20V
Application: automotive industry
Kind of package: reel; tape
Case: DFN3333-8
Produkt ist nicht verfügbar
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PJC7400_R1_00001 PJC7400_R1_00001 PanJit Semiconductor PJC7400.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.9A; Idm: 7.6A; 350mW; SOT323
Mounting: SMD
Case: SOT323
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 7.6A
Drain current: 1.9A
Gate charge: 4.8nC
On-state resistance: 0.11Ω
Power dissipation: 0.35W
Gate-source voltage: ±12V
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667+0.13 EUR
705+0.12 EUR
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PJC7401_R1_00001 PJC7401_R1_00001 PanJit Semiconductor PJC7401.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; Idm: -6A; 350mW; SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
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228+0.37 EUR
355+0.24 EUR
417+0.2 EUR
500+0.18 EUR
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PJC7404_R1_00001 PJC7404_R1_00001 PanJit Semiconductor PJC7404.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT323
Mounting: SMD
Pulsed drain current: 4A
Power dissipation: 0.35W
Gate charge: 1.6nC
Polarisation: unipolar
Drain current: 1A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: SOT323
On-state resistance: 0.4Ω
Produkt ist nicht verfügbar
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PJC7406_R1_00001 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJC7407_R1_00001 PJC7407_R1_00001 PanJit Semiconductor PJC7407.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; Idm: -5.2A; 350mW
Mounting: SMD
Pulsed drain current: -5.2A
Power dissipation: 0.35W
Gate charge: 5.4nC
Polarisation: unipolar
Drain current: -1.3A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SOT323
On-state resistance: 0.2Ω
auf Bestellung 6105 Stücke:
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500+0.17 EUR
685+0.12 EUR
736+0.12 EUR
782+0.11 EUR
1000+0.1 EUR
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PJC7409_R1_00001 PanJit Semiconductor PJC7409.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 39A; DFN5060-8
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Gate-source voltage: 20V
Drain current: 39A
Drain-source voltage: 60V
Polarisation: unipolar
Produkt ist nicht verfügbar
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PJC7428_R1_00001 PJC7428_R1_00001 PanJit Semiconductor PJC7428.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 350mW; SOT323
Mounting: SMD
Case: SOT323
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 0.6A
Drain current: 0.3A
Gate charge: 0.9nC
On-state resistance: 4Ω
Power dissipation: 0.35W
Gate-source voltage: ±10V
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278+0.31 EUR
463+0.18 EUR
734+0.12 EUR
872+0.098 EUR
989+0.086 EUR
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PJC7438-AU_R1_000A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 63.8A; DFN3333-8
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: 20V
Drain current: 63.8A
Drain-source voltage: 80V
Application: automotive industry
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PJC7438_R1_00001 PanJit Semiconductor PJC7438.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 55A; DFN3333-8
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: 20V
Drain current: 55A
Drain-source voltage: 80V
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PJC7439-AU_R1_000A1 PJC7439-AU_R1_000A1 PanJit Semiconductor PJC7439-AU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -250mA; Idm: -1A; 350mW
Mounting: SMD
Case: SOT323
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1A
Drain current: -0.25A
Gate charge: 1.1nC
On-state resistance: 13Ω
Power dissipation: 0.35W
Gate-source voltage: ±20V
Application: automotive industry
auf Bestellung 2875 Stücke:
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278+0.31 EUR
451+0.19 EUR
729+0.12 EUR
1000+0.086 EUR
1147+0.074 EUR
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PJD100N06SA-AU_L2_006A1 PanJit Semiconductor PJD100N06SA-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50.4A; DFN3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50.4A
Case: DFN3333-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJD10P10A_L2_00601 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; TO252AA
Case: TO252AA
Mounting: SMD
Polarisation: unipolar
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
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PJD13N10A_L2_00601 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJD15P06A-AU_L2_000A1 PJD15P06A-AU_L2_000A1 PanJit Semiconductor PJD15P06A-AU Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15A; Idm: -60A; 25W; TO252AA
Case: TO252AA
Kind of package: reel; tape
Pulsed drain current: -60A
Power dissipation: 25W
Gate charge: 17nC
Polarisation: unipolar
Drain current: -15A
Kind of channel: enhancement
Drain-source voltage: -60V
Application: automotive industry
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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PJD15P06A_L2_00601 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; TO252AA
Case: TO252AA
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 15A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Mounting: SMD
Produkt ist nicht verfügbar
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PJD16N06A-AU_L2_000A1 PanJit Semiconductor PJD16N06A-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJD16N06A_L2_00601 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJD16P06A_L2_00001 PJD16P06A_L2_00001 PanJit Semiconductor PJD16P06A.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -16A; Idm: -64A; 2W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -16A
Case: TO252AA
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: -64A
Gate charge: 22nC
On-state resistance: 65mΩ
Power dissipation: 2W
auf Bestellung 10928 Stücke:
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135+0.63 EUR
198+0.43 EUR
250+0.39 EUR
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PJD18N20_L2_00001 PJD18N20_L2_00001 PanJit Semiconductor PJx18N20.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 83W; TO252AA
Case: TO252AA
Mounting: SMD
On-state resistance: 0.16Ω
Drain current: 11A
Gate-source voltage: ±20V
Power dissipation: 83W
Pulsed drain current: 72A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 24nC
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PJD25N06A-AU_L2_000A1 PanJit Semiconductor PJD25N06A-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJD25N06A_L2_00001 PJD25N06A_L2_00001 PanJit Semiconductor PJD25N06A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 40W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
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157+0.55 EUR
215+0.39 EUR
500+0.33 EUR
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PJD40N06A-AU_L2_000A1 PanJit Semiconductor PJD40N06A-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Case: TO252AA
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: 20V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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PJD40N06A_L2_00601 PJD40N06A_L2_00601 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 8934 Stücke:
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93+0.92 EUR
138+0.62 EUR
154+0.56 EUR
500+0.49 EUR
1000+0.44 EUR
3000+0.43 EUR
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PJD40P03E-AU_L2_006A1 PanJit Semiconductor PJD40P03E-AU Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -33A; Idm: -94A; 17W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -33A
Pulsed drain current: -94A
Power dissipation: 17W
Case: TO252AA
Gate-source voltage: ±25V
On-state resistance: 18.8mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJD45N06A_L2_00001 PJD45N06A_L2_00001 PanJit Semiconductor PJx45N06A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; Idm: 180A; 63W; TO252AA
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 39nC
On-state resistance: 15mΩ
Drain current: 45A
Gate-source voltage: ±20V
Power dissipation: 63W
Drain-source voltage: 60V
Pulsed drain current: 180A
Kind of channel: enhancement
auf Bestellung 154 Stücke:
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103+0.82 EUR
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PJD45P03E-AU_L2_006A1 PanJit Semiconductor PJD45P03E-AU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -42A; Idm: -128A; 21W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -42A
Power dissipation: 21W
Case: TO252AA
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 32nC
Kind of channel: enhancement
Pulsed drain current: -128A
Application: automotive industry
Kind of package: reel
Produkt ist nicht verfügbar
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PJD50N04-AU_L2_000A1 PanJit Semiconductor PJD50N04-AU Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJD50N04V-AU_L2_002A1 PanJit Semiconductor PJD50N04V-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJD60N04S-AU_L2_002A1 PanJit Semiconductor PJD60N04S-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 140A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJD60N04V-AU_L2_002A1 PanJit Semiconductor PJD60N04V-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 154A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 154A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJD60N06SA-AU_L2_006A1 PanJit Semiconductor PJD60N06SA-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 66A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 66A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJD70N10SA-AU_L2_006A1 PanJit Semiconductor PJD70N10SA-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 88A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 88A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJD70P03E-AU_L2_006A1 PanJit Semiconductor PJD70P03E-AU Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -77A; Idm: -225A; 40W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -77A
Pulsed drain current: -225A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±25V
On-state resistance: 8.4mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJD80N03_L2_00001 PanJit Semiconductor PJx80N03.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJD9P06A-AU_L2_000A1 PanJit Semiconductor PJD9P06A-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJE138K_R1_00001 PJE138K_R1_00001 PanJit Semiconductor PJE138K.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 350mA; Idm: 1.2A; 223mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Pulsed drain current: 1.2A
Power dissipation: 223mW
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 818 Stücke:
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556+0.15 EUR
818+0.1 EUR
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PJE28VM2FN2_R1_00501 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 29V; 3A; 0.165kW; unidirectional; DFN1006-2; Ch: 1
Type of diode: TVS
Case: DFN1006-2
Mounting: SMD
Max. off-state voltage: 28V
Semiconductor structure: unidirectional
Capacitance: 25pF
Leakage current: 0.5µA
Max. forward impulse current: 3A
Number of channels: 1
Breakdown voltage: 29V
Peak pulse power dissipation: 0.165kW
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PJE28VM2TS_R1_00001 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 29V; 3A; 0.165kW; unidirectional; SOD523; Ch: 1
Type of diode: TVS
Case: SOD523
Mounting: SMD
Max. off-state voltage: 28V
Semiconductor structure: unidirectional
Capacitance: 25pF
Leakage current: 0.5µA
Max. forward impulse current: 3A
Number of channels: 1
Breakdown voltage: 29V
Peak pulse power dissipation: 0.165kW
Produkt ist nicht verfügbar
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PJE5UFN10A-AU_R1_000A1 PanJit Semiconductor PJE5UFN10A-AU Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 2.5A; unidirectional; DFN2510; Ch: 4
Application: automotive industry
Case: DFN2510
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.6pF
Leakage current: 1µA
Max. forward impulse current: 2.5A
Number of channels: 4
Max. off-state voltage: 5V
Breakdown voltage: 6V
Produkt ist nicht verfügbar
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PJE5UFN10A_R1_00001 PanJit Semiconductor PJE5UFN10A.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 2.5A; unidirectional; DFN2510-10; Ch: 4
Case: DFN2510-10
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.8pF
Leakage current: 1µA
Max. forward impulse current: 2.5A
Number of channels: 4
Max. off-state voltage: 5V
Breakdown voltage: 6V
Produkt ist nicht verfügbar
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PJE8400_R1_00001 PanJit Semiconductor PJE8400.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.1A; SOT523
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.1A
Gate-source voltage: 12V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Produkt ist nicht verfügbar
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PJA3406_R1_00001 PJA3406.pdf
PJA3406_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.4A
Case: SOT23
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 1.25W
Gate charge: 5.8nC
On-state resistance: 70mΩ
Pulsed drain current: 17.6A
auf Bestellung 2460 Stücke:
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239+0.36 EUR
360+0.24 EUR
674+0.13 EUR
905+0.094 EUR
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PJA3407E_R1_00501
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 360mA; SOT363
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Drain current: 0.36A
Gate-source voltage: 20V
Drain-source voltage: 50V
Kind of package: reel; tape
Case: SOT363
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJA3407_R1_00001 PJA3407.pdf
PJA3407_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.8A
Pulsed drain current: -15.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2364 Stücke:
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152+0.56 EUR
243+0.35 EUR
391+0.21 EUR
527+0.17 EUR
1000+0.14 EUR
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PJA3409_R1_00001 PJA3409.pdf
PJA3409_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -11.6A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -2.9A
Pulsed drain current: -11.6A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.15Ω
Mounting: SMD
Gate charge: 9.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2379 Stücke:
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186+0.46 EUR
300+0.29 EUR
469+0.18 EUR
619+0.14 EUR
1000+0.12 EUR
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PJA3413_R1_00001 PJA3413.pdf
PJA3413_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -13.6A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.4A
Pulsed drain current: -13.6A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 146mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2353 Stücke:
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193+0.44 EUR
388+0.21 EUR
587+0.14 EUR
774+0.11 EUR
1000+0.098 EUR
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PJA3416AE_R1_00001 PJA3416AE.pdf
PJA3416AE_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; Idm: 32A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Pulsed drain current: 32A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 34mΩ
Mounting: SMD
Gate charge: 8.6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 141 Stücke:
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141+0.6 EUR
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PJA3428_R1_00001 PJA3428.pdf
PJA3428_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.3A
Pulsed drain current: 0.6A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.9nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 7290 Stücke:
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209+0.4 EUR
348+0.25 EUR
557+0.15 EUR
752+0.11 EUR
1000+0.1 EUR
3000+0.084 EUR
6000+0.076 EUR
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PJA3433_R1_00001 PJA3433.pdf
PJA3433_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.1A
Pulsed drain current: -4.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.97Ω
Mounting: SMD
Gate charge: 1.6nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1995 Stücke:
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AnzahlPrivatkunde
385+0.23 EUR
481+0.18 EUR
650+0.13 EUR
725+0.12 EUR
1000+0.094 EUR
Mindestbestellmenge: 385 Stücke
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PJA3434_R1_00001 PJA3434.pdf
PJA3434_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.75A
Pulsed drain current: 1.5A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3740 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
295+0.29 EUR
463+0.18 EUR
792+0.11 EUR
1117+0.076 EUR
1205+0.07 EUR
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PJA3435_R1_00001 PJA3435.pdf
PJA3435_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.5A
Pulsed drain current: -1A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 5950 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
193+0.44 EUR
323+0.26 EUR
500+0.17 EUR
666+0.13 EUR
1000+0.11 EUR
3000+0.094 EUR
Mindestbestellmenge: 193 Stücke
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PJA3436-AU_R1_000A1 PJA3436-AU.pdf
PJA3436-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.2A
Pulsed drain current: 4.8A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 0.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 2978 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
200+0.43 EUR
336+0.25 EUR
542+0.15 EUR
738+0.12 EUR
1000+0.1 EUR
Mindestbestellmenge: 200 Stücke
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PJA3438-AU_R1_000A1 PJA3438-AU.pdf
PJA3438-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 0.95nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
179+0.48 EUR
275+0.31 EUR
439+0.19 EUR
500+0.17 EUR
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PJA3439-AU_R1_000A1 PJA3439-AU.pdf
PJA3439-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -300mA; Idm: -1A; 500mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -300mA
Pulsed drain current: -1A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 13Ω
Mounting: SMD
Gate charge: 1.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
167+0.51 EUR
271+0.31 EUR
448+0.19 EUR
622+0.13 EUR
1000+0.12 EUR
Mindestbestellmenge: 167 Stücke
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PJA3463_R1_00001 PJA3463.pdf
PJA3463_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.5A; Idm: -10A; 1.25W; SOT23
Mounting: SMD
Pulsed drain current: -10A
Power dissipation: 1.25W
Gate charge: 10nC
Polarisation: unipolar
Drain current: -2.5A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 0.13Ω
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJA3471_R1_00501
PJA3471_R1_00501
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -900mA; Idm: -3.6A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -0.9A
Pulsed drain current: -3.6A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Gate charge: 8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 21435 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
148+0.58 EUR
260+0.33 EUR
410+0.2 EUR
496+0.17 EUR
569+0.15 EUR
1000+0.14 EUR
3000+0.13 EUR
Mindestbestellmenge: 148 Stücke
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PJB100N04S-AU_R2_002A1 PJB100N04S-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 161A; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 161A
Case: TO263
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
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PJB100N04V-AU_R2_002A1 PJB100N04V-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 219A; TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 219A
Case: TO263AB
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
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PJB120N03S-AU_R2_002A1 PJB120N03S-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 76A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 76A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
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PJB140P04E7-AU_R2_002A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; DFN3333-8
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 22A
Drain-source voltage: 100V
Gate-source voltage: 20V
Application: automotive industry
Kind of package: reel; tape
Case: DFN3333-8
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
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PJC7400_R1_00001 PJC7400.pdf
PJC7400_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.9A; Idm: 7.6A; 350mW; SOT323
Mounting: SMD
Case: SOT323
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 7.6A
Drain current: 1.9A
Gate charge: 4.8nC
On-state resistance: 0.11Ω
Power dissipation: 0.35W
Gate-source voltage: ±12V
auf Bestellung 5345 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
556+0.15 EUR
667+0.13 EUR
705+0.12 EUR
782+0.11 EUR
Mindestbestellmenge: 556 Stücke
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PJC7401_R1_00001 PJC7401.pdf
PJC7401_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; Idm: -6A; 350mW; SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2075 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
139+0.61 EUR
228+0.37 EUR
355+0.24 EUR
417+0.2 EUR
500+0.18 EUR
1000+0.17 EUR
Mindestbestellmenge: 139 Stücke
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PJC7404_R1_00001 PJC7404.pdf
PJC7404_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT323
Mounting: SMD
Pulsed drain current: 4A
Power dissipation: 0.35W
Gate charge: 1.6nC
Polarisation: unipolar
Drain current: 1A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: SOT323
On-state resistance: 0.4Ω
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJC7406_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJC7407_R1_00001 PJC7407.pdf
PJC7407_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; Idm: -5.2A; 350mW
Mounting: SMD
Pulsed drain current: -5.2A
Power dissipation: 0.35W
Gate charge: 5.4nC
Polarisation: unipolar
Drain current: -1.3A
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SOT323
On-state resistance: 0.2Ω
auf Bestellung 6105 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
500+0.17 EUR
685+0.12 EUR
736+0.12 EUR
782+0.11 EUR
1000+0.1 EUR
Mindestbestellmenge: 500 Stücke
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PJC7409_R1_00001 PJC7409.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 39A; DFN5060-8
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Gate-source voltage: 20V
Drain current: 39A
Drain-source voltage: 60V
Polarisation: unipolar
Produkt ist nicht verfügbar
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PJC7428_R1_00001 PJC7428.pdf
PJC7428_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 350mW; SOT323
Mounting: SMD
Case: SOT323
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 0.6A
Drain current: 0.3A
Gate charge: 0.9nC
On-state resistance: 4Ω
Power dissipation: 0.35W
Gate-source voltage: ±10V
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
278+0.31 EUR
463+0.18 EUR
734+0.12 EUR
872+0.098 EUR
989+0.086 EUR
Mindestbestellmenge: 278 Stücke
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PJC7438-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 63.8A; DFN3333-8
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: 20V
Drain current: 63.8A
Drain-source voltage: 80V
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJC7438_R1_00001 PJC7438.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 55A; DFN3333-8
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: 20V
Drain current: 55A
Drain-source voltage: 80V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJC7439-AU_R1_000A1 PJC7439-AU.pdf
PJC7439-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -250mA; Idm: -1A; 350mW
Mounting: SMD
Case: SOT323
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1A
Drain current: -0.25A
Gate charge: 1.1nC
On-state resistance: 13Ω
Power dissipation: 0.35W
Gate-source voltage: ±20V
Application: automotive industry
auf Bestellung 2875 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
278+0.31 EUR
451+0.19 EUR
729+0.12 EUR
1000+0.086 EUR
1147+0.074 EUR
Mindestbestellmenge: 278 Stücke
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PJD100N06SA-AU_L2_006A1 PJD100N06SA-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50.4A; DFN3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50.4A
Case: DFN3333-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJD10P10A_L2_00601
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; TO252AA
Case: TO252AA
Mounting: SMD
Polarisation: unipolar
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJD13N10A_L2_00601
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 9000 Stücke
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PJD15P06A-AU_L2_000A1 PJD15P06A-AU
PJD15P06A-AU_L2_000A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15A; Idm: -60A; 25W; TO252AA
Case: TO252AA
Kind of package: reel; tape
Pulsed drain current: -60A
Power dissipation: 25W
Gate charge: 17nC
Polarisation: unipolar
Drain current: -15A
Kind of channel: enhancement
Drain-source voltage: -60V
Application: automotive industry
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJD15P06A_L2_00601
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; TO252AA
Case: TO252AA
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 15A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJD16N06A-AU_L2_000A1 PJD16N06A-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJD16N06A_L2_00601
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJD16P06A_L2_00001 PJD16P06A.pdf
PJD16P06A_L2_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -16A; Idm: -64A; 2W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -16A
Case: TO252AA
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: -64A
Gate charge: 22nC
On-state resistance: 65mΩ
Power dissipation: 2W
auf Bestellung 10928 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
93+0.92 EUR
135+0.63 EUR
198+0.43 EUR
250+0.39 EUR
Mindestbestellmenge: 93 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJD18N20_L2_00001 PJx18N20.pdf
PJD18N20_L2_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 83W; TO252AA
Case: TO252AA
Mounting: SMD
On-state resistance: 0.16Ω
Drain current: 11A
Gate-source voltage: ±20V
Power dissipation: 83W
Pulsed drain current: 72A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 24nC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJD25N06A-AU_L2_000A1 PJD25N06A-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJD25N06A_L2_00001 PJD25N06A.pdf
PJD25N06A_L2_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 40W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1002 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
107+0.8 EUR
157+0.55 EUR
215+0.39 EUR
500+0.33 EUR
1000+0.31 EUR
Mindestbestellmenge: 107 Stücke
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PJD40N06A-AU_L2_000A1 PJD40N06A-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Case: TO252AA
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: 20V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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PJD40N06A_L2_00601
PJD40N06A_L2_00601
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 8934 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
93+0.92 EUR
138+0.62 EUR
154+0.56 EUR
500+0.49 EUR
1000+0.44 EUR
3000+0.43 EUR
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PJD40P03E-AU_L2_006A1 PJD40P03E-AU
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -33A; Idm: -94A; 17W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -33A
Pulsed drain current: -94A
Power dissipation: 17W
Case: TO252AA
Gate-source voltage: ±25V
On-state resistance: 18.8mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJD45N06A_L2_00001 PJx45N06A.pdf
PJD45N06A_L2_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; Idm: 180A; 63W; TO252AA
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 39nC
On-state resistance: 15mΩ
Drain current: 45A
Gate-source voltage: ±20V
Power dissipation: 63W
Drain-source voltage: 60V
Pulsed drain current: 180A
Kind of channel: enhancement
auf Bestellung 154 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
72+1.19 EUR
103+0.82 EUR
150+0.57 EUR
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PJD45P03E-AU_L2_006A1 PJD45P03E-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -42A; Idm: -128A; 21W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -42A
Power dissipation: 21W
Case: TO252AA
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 32nC
Kind of channel: enhancement
Pulsed drain current: -128A
Application: automotive industry
Kind of package: reel
Produkt ist nicht verfügbar
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PJD50N04-AU_L2_000A1 PJD50N04-AU
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJD50N04V-AU_L2_002A1 PJD50N04V-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJD60N04S-AU_L2_002A1 PJD60N04S-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 140A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJD60N04V-AU_L2_002A1 PJD60N04V-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 154A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 154A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJD60N06SA-AU_L2_006A1 PJD60N06SA-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 66A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 66A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJD70N10SA-AU_L2_006A1 PJD70N10SA-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 88A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 88A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJD70P03E-AU_L2_006A1 PJD70P03E-AU
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -77A; Idm: -225A; 40W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -77A
Pulsed drain current: -225A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±25V
On-state resistance: 8.4mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJD80N03_L2_00001 PJx80N03.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJD9P06A-AU_L2_000A1 PJD9P06A-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJE138K_R1_00001 PJE138K.pdf
PJE138K_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 350mA; Idm: 1.2A; 223mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Pulsed drain current: 1.2A
Power dissipation: 223mW
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 818 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
358+0.24 EUR
556+0.15 EUR
818+0.1 EUR
Mindestbestellmenge: 358 Stücke
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PJE28VM2FN2_R1_00501
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 29V; 3A; 0.165kW; unidirectional; DFN1006-2; Ch: 1
Type of diode: TVS
Case: DFN1006-2
Mounting: SMD
Max. off-state voltage: 28V
Semiconductor structure: unidirectional
Capacitance: 25pF
Leakage current: 0.5µA
Max. forward impulse current: 3A
Number of channels: 1
Breakdown voltage: 29V
Peak pulse power dissipation: 0.165kW
Produkt ist nicht verfügbar
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PJE28VM2TS_R1_00001
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 29V; 3A; 0.165kW; unidirectional; SOD523; Ch: 1
Type of diode: TVS
Case: SOD523
Mounting: SMD
Max. off-state voltage: 28V
Semiconductor structure: unidirectional
Capacitance: 25pF
Leakage current: 0.5µA
Max. forward impulse current: 3A
Number of channels: 1
Breakdown voltage: 29V
Peak pulse power dissipation: 0.165kW
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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PJE5UFN10A-AU_R1_000A1 PJE5UFN10A-AU
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 2.5A; unidirectional; DFN2510; Ch: 4
Application: automotive industry
Case: DFN2510
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.6pF
Leakage current: 1µA
Max. forward impulse current: 2.5A
Number of channels: 4
Max. off-state voltage: 5V
Breakdown voltage: 6V
Produkt ist nicht verfügbar
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PJE5UFN10A_R1_00001 PJE5UFN10A.pdf
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 2.5A; unidirectional; DFN2510-10; Ch: 4
Case: DFN2510-10
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.8pF
Leakage current: 1µA
Max. forward impulse current: 2.5A
Number of channels: 4
Max. off-state voltage: 5V
Breakdown voltage: 6V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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PJE8400_R1_00001 PJE8400.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.1A; SOT523
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.1A
Gate-source voltage: 12V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Produkt ist nicht verfügbar
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