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PJQ5526_R2_00201 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 73A; DFN5060-8
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 30V
Drain current: 73A
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PJQ5546V-AU_R2_002A1 PJQ5546V-AU_R2_002A1 PanJit Semiconductor PJQ5546V-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 79A; Idm: 316A; 65W; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 79A
Pulsed drain current: 316A
Power dissipation: 65W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJQ5808-AU_R2_002A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -31A; DFN5060-8
Kind of package: reel; tape
Case: DFN5060-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain current: -31A
Drain-source voltage: -30V
Gate-source voltage: 25V
Application: automotive industry
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PJQ5846-AU_R2_000A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 40A; DFN5060-8
Kind of package: reel; tape
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: 20V
Drain current: 40A
Drain-source voltage: 40V
Application: automotive industry
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PJQ5846_R2_00001 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 40A; DFN5060-8
Kind of package: reel; tape
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: 20V
Drain current: 40A
Drain-source voltage: 40V
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PJS6600_S1_00001 PanJit Semiconductor PJS6600 Category: SMD N channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20V; 4.1A; SOT23-6
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.1A
Case: SOT23-6
Gate-source voltage: 12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJS6601-AU_S1_000A1 PanJit Semiconductor PJS6601-AU.pdf Category: SMD N channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20V; 4.1A; SOT23-6
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.1A
Case: SOT23-6
Gate-source voltage: 12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJS6601_S1_00001 PJS6601_S1_00001 PanJit Semiconductor Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 4.1/-3.1A; 1.25W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 4.1/-3.1A
Case: SOT23-6
Gate-source voltage: ±12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 4.6/5.4nC
On-state resistance: 95/190mΩ
Power dissipation: 1.25W
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307+0.23 EUR
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PJS6602_S1_00001 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20V; 5.2A; SOT23-6
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.2A
Case: SOT23-6
Gate-source voltage: 12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJS6603_S1_00001 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30V; 4.2A; SOT23-6
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.2A
Case: SOT23-6
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJS6604_S1_00001 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 4A; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Case: SOT23-6
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJS6815_S1_00001 PanJit Semiconductor PJS6815.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 360mA; SOT363
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Case: SOT363
Drain current: 0.36A
Gate-source voltage: 20V
Drain-source voltage: 50V
Polarisation: unipolar
Produkt ist nicht verfügbar
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PJSD03LCFN2_R1_00501 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 5.4V; 6A; bidirectional; DFN1006-2; Ch: 1
Type of diode: TVS
Case: DFN1006-2
Mounting: SMD
Max. off-state voltage: 3.3V
Semiconductor structure: bidirectional
Capacitance: 25pF
Leakage current: 2.5µA
Max. forward impulse current: 6A
Number of channels: 1
Breakdown voltage: 5.4V
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PJSD03TS-AU_R1_000A1 PJSD03TS-AU_R1_000A1 PanJit Semiconductor PJSD03TS-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 120W; 4V; 5A; unidirectional; SOD523; reel,tape
Mounting: SMD
Capacitance: 0.2nF
Leakage current: 0.2mA
Max. forward impulse current: 5A
Max. off-state voltage: 3.3V
Breakdown voltage: 4V
Peak pulse power dissipation: 0.12kW
Application: automotive industry
Version: ESD
Case: SOD523
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
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PJSD03TS_R1_00001 PanJit Semiconductor PJSD03TS_SERIES.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 4V; 5A; 0.12kW; unidirectional; SOD523; Ch: 1
Type of diode: TVS
Breakdown voltage: 4V
Max. forward impulse current: 5A
Peak pulse power dissipation: 0.12kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD523
Max. off-state voltage: 3.3V
Leakage current: 0.2mA
Number of channels: 1
Capacitance: 0.2nF
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PJSD05CFN2_R1_00501 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 15A; bidirectional; DFN1006-2; Ch: 1
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Type of diode: TVS
Capacitance: 70pF
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 15A
Max. off-state voltage: 5V
Breakdown voltage: 6V
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PJSD05CTM_R1_00001 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 5.78V; 1A; 0.1kW; bidirectional; SOD923; Ch: 1
Semiconductor structure: bidirectional
Case: SOD923
Mounting: SMD
Type of diode: TVS
Capacitance: 30pF
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 1A
Max. off-state voltage: 5V
Breakdown voltage: 5.78V
Peak pulse power dissipation: 0.1kW
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PJSD05CW-AU_R1_000A1 PanJit Semiconductor PJSD05CW-AU_SERIES.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 6.37V; 24A; 0.35kW; bidirectional; SOD323; Ch: 1
Application: automotive industry
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Type of diode: TVS
Capacitance: 0.2nF
Leakage current: 5µA
Number of channels: 1
Max. forward impulse current: 24A
Max. off-state voltage: 5V
Breakdown voltage: 6.37V
Peak pulse power dissipation: 0.35kW
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PJSD05CW_R1_00001 PanJit Semiconductor PJSD36CW Category: Protection diodes - arrays
Description: Diode: TVS; 7.04V; 24A; 0.35kW; bidirectional; SOD323; Ch: 1
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Type of diode: TVS
Capacitance: 0.2nF
Leakage current: 5µA
Number of channels: 1
Max. forward impulse current: 24A
Max. off-state voltage: 5V
Breakdown voltage: 7.04V
Peak pulse power dissipation: 0.35kW
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PJSD05TS-AU_R1_000A1 PJSD05TS-AU_R1_000A1 PanJit Semiconductor PJSD03TS-AU_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 120W; 6V; 5A; unidirectional; SOD523; reel,tape
Mounting: SMD
Capacitance: 0.11nF
Leakage current: 5µA
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Peak pulse power dissipation: 0.12kW
Application: automotive industry
Version: ESD
Case: SOD523
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
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468+0.15 EUR
618+0.12 EUR
695+0.1 EUR
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PJSD07TS-AU_R1_000A1 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 7.5V; 8.8A; 0.12kW; unidirectional; SOD523; Ch: 1
Mounting: SMD
Capacitance: 85pF
Leakage current: 0.15µA
Max. forward impulse current: 8.8A
Number of channels: 1
Max. off-state voltage: 7V
Breakdown voltage: 7.5V
Peak pulse power dissipation: 0.12kW
Application: automotive industry
Case: SOD523
Type of diode: TVS
Semiconductor structure: unidirectional
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PJSD08TS-AU_R1_007A1 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 8.5V; 5A; unidirectional; SOD523; Ch: 1
Mounting: SMD
Capacitance: 70pF
Leakage current: 5µA
Max. forward impulse current: 5A
Number of channels: 1
Max. off-state voltage: 8V
Breakdown voltage: 8.5V
Application: automotive industry
Case: SOD523
Type of diode: TVS
Semiconductor structure: unidirectional
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PJSD12TS-AU_R1_000A1 PanJit Semiconductor PJSD03TS-AU_SERIES.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 13.3V; 5A; 0.12kW; unidirectional; SOD523; Ch: 1
Mounting: SMD
Capacitance: 60pF
Leakage current: 5µA
Max. forward impulse current: 5A
Number of channels: 1
Max. off-state voltage: 12V
Breakdown voltage: 13.3V
Peak pulse power dissipation: 0.12kW
Application: automotive industry
Case: SOD523
Type of diode: TVS
Semiconductor structure: unidirectional
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PJSD15TS-AU_R1_000A1 PanJit Semiconductor PJSD15TS-AU_SERIES.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 16.6V; 5A; 0.12kW; unidirectional; SOD523; Ch: 1
Mounting: SMD
Capacitance: 50pF
Leakage current: 5µA
Max. forward impulse current: 5A
Number of channels: 1
Max. off-state voltage: 15V
Breakdown voltage: 16.6V
Peak pulse power dissipation: 0.12kW
Application: automotive industry
Case: SOD523
Type of diode: TVS
Semiconductor structure: unidirectional
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PJSD24TS-AU_R1_000A1 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 26.7V; 3A; 0.12kW; unidirectional; SOD523; Ch: 1
Mounting: SMD
Capacitance: 25pF
Leakage current: 5µA
Max. forward impulse current: 3A
Number of channels: 1
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Peak pulse power dissipation: 0.12kW
Application: automotive industry
Case: SOD523
Type of diode: TVS
Semiconductor structure: unidirectional
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PJSD24TS_R1_00001 PJSD24TS_R1_00001 PanJit Semiconductor PJSD03TS_SERIES.pdf Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 120W; 26.7V; unidirectional; SOD523; reel,tape
Type of diode: TVS
Case: SOD523
Mounting: SMD
Max. off-state voltage: 24V
Semiconductor structure: unidirectional
Capacitance: 25pF
Leakage current: 5µA
Kind of package: reel; tape
Breakdown voltage: 26.7V
Peak pulse power dissipation: 0.12kW
Version: ESD
Produkt ist nicht verfügbar
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PJSD36CW-AU_R1_000A1 PanJit Semiconductor PJSD05CW-AU_SERIES.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 40.57V; 3A; 0.35kW; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 36V
Breakdown voltage: 40.57V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 1µA
Capacitance: 45pF
Number of channels: 1
Application: automotive industry
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PJSD36CW_R1_00001 PanJit Semiconductor PJSD05CW_SERIES.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 29.4V; 3A; 0.35kW; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Breakdown voltage: 29.4V
Max. forward impulse current: 3A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 36V
Leakage current: 1µA
Number of channels: 1
Capacitance: 45pF
Produkt ist nicht verfügbar
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PJSD36TS-AU_R1_000A1 PanJit Semiconductor PJSD03TS-AU_SERIES.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 40V; 1A; 0.12kW; unidirectional; SOD523; Ch: 1
Mounting: SMD
Capacitance: 20pF
Leakage current: 5µA
Max. forward impulse current: 1A
Number of channels: 1
Max. off-state voltage: 36V
Breakdown voltage: 40V
Peak pulse power dissipation: 0.12kW
Application: automotive industry
Case: SOD523
Type of diode: TVS
Semiconductor structure: unidirectional
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PJSOT24C-05-AU_R1_000A1 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 29.4V; 12A; 0.35kW; unidirectional; SOT23; Ch: 2
Type of diode: TVS
Breakdown voltage: 29.4V
Max. forward impulse current: 12A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Leakage current: 1µA
Number of channels: 2
Capacitance: 0.15nF
Application: automotive industry
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PJSOT36_R1_00501 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 40V; 9A; 0.5kW; unidirectional; SOT23; Ch: 1
Mounting: SMD
Number of channels: 1
Max. forward impulse current: 9A
Max. off-state voltage: 36V
Breakdown voltage: 40V
Peak pulse power dissipation: 0.5kW
Semiconductor structure: unidirectional
Case: SOT23
Type of diode: TVS
Capacitance: 80pF
Leakage current: 1µA
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PJT7600_R1_00001 PJT7600_R1_00001 PanJit Semiconductor PJT7600.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 1A/-700mA
Gate charge: 1.6/2.2nC
On-state resistance: 400/600mΩ
Power dissipation: 0.35W
Gate-source voltage: ±8V
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PJT7603_R1_00001 PJT7603_R1_00001 PanJit Semiconductor PJT7603.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 50/-60V
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 50/-60V
Drain current: -250/400mA
Gate charge: 0.95/1.1nC
On-state resistance: 2.5/6Ω
Power dissipation: 0.35W
Gate-source voltage: ±20V
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PJT7800_R1_00001 PJT7800_R1_00001 PanJit Semiconductor PJT7800.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT363
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 4A
Drain current: 1A
Gate charge: 1.6nC
On-state resistance: 0.4Ω
Power dissipation: 0.35W
Gate-source voltage: ±8V
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PJT7801_R1_00001 PJT7801_R1_00001 PanJit Semiconductor PJT7801.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -700mA; Idm: -2.8A; 350mW
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -2.8A
Drain current: -0.7A
Gate charge: 2.2nC
On-state resistance: 0.6Ω
Power dissipation: 0.35W
Gate-source voltage: ±8V
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PJT7808_R1_00001 PanJit Semiconductor PJT7808.pdf Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.25A
Gate-source voltage: 20V
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PJT7812_R1_00001 PanJit Semiconductor PJT7812.pdf Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -250mA
Case: SOT363
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJT7838_R1_00001 PJT7838_R1_00001 PanJit Semiconductor PJT7838.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 400mA; Idm: 1.2A; 350mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.4A
Pulsed drain current: 1.2A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 0.95nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 7648 Stücke:
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527+0.14 EUR
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596+0.12 EUR
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PJUSB208_R1_00001 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 85V; unidirectional; SOT23-6L; Ch: 4
Mounting: SMD
Case: SOT23-6L
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 1pF
Leakage current: 1µA
Number of channels: 4
Max. off-state voltage: 70V
Breakdown voltage: 85V
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PJW3P06A-AU_R2_007A1 PanJit Semiconductor Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3A
Case: SOT223
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJW3P06A_R2_00701 PanJit Semiconductor Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3A
Case: SOT223
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJW4N06A-AU_R2_000A1 PJW4N06A-AU_R2_000A1 PanJit Semiconductor PJW4N06A-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; Idm: 8A; 2.6W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Pulsed drain current: 8A
Power dissipation: 2.6W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJW4N06A_R2_00001 PJW4N06A_R2_00001 PanJit Semiconductor PJW4N06A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 8A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJW4P06A-AU_R2_007A1 PJW4P06A-AU_R2_007A1 PanJit Semiconductor PJW4P06A-AU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4A; Idm: -16A; 3.1W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4A
Case: SOT223
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -16A
Application: automotive industry
Gate charge: 10nC
On-state resistance: 0.13Ω
Power dissipation: 3.1W
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272+0.26 EUR
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PJW4P06A_R2_00701 PJW4P06A_R2_00701 PanJit Semiconductor Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4A; Idm: -16A; 3.1W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4A
Case: SOT223
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -16A
Gate charge: 10nC
On-state resistance: 0.13Ω
Power dissipation: 3.1W
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PJW5P06A-AU_R2_000A1 PJW5P06A-AU_R2_000A1 PanJit Semiconductor Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5A; Idm: -20A; 1W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5A
Case: SOT223
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -20A
Application: automotive industry
Gate charge: 17nC
On-state resistance: 85mΩ
Power dissipation: 1W
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PJW5P06A_R2_00701 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5A; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5A
Case: SOT223
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJX138K_R1_00001 PJX138K_R1_00001 PanJit Semiconductor Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; Idm: 1.2A; 223mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Pulsed drain current: 1.2A
Power dissipation: 223mW
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3722 Stücke:
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477+0.15 EUR
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916+0.078 EUR
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PJX8603_R1_00001 PJX8603_R1_00001 PanJit Semiconductor PJX8603.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 50/-60V; 360/-200mA; 300mW
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 50/-60V
Drain current: 360/-200mA
Power dissipation: 0.3W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 2.5/7Ω
Mounting: SMD
Gate charge: 0.95/1.1nC
Kind of package: reel; tape
Kind of channel: enhancement
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582+0.12 EUR
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PJX8812_R1_00001 PanJit Semiconductor Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; SOT563
Polarisation: unipolar
Kind of channel: enhancement
Mounting: SMD
Case: SOT563
Type of transistor: N-MOSFET x2
Drain current: 0.3A
Gate-source voltage: 10V
Drain-source voltage: 30V
Kind of package: reel; tape
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PJX8828-AU_R1_000A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; SOT563
Kind of channel: enhancement
Mounting: SMD
Case: SOT563
Type of transistor: N-MOSFET x2
Drain current: 0.3A
Gate-source voltage: 10V
Drain-source voltage: 30V
Polarisation: unipolar
Application: automotive industry
Kind of package: reel; tape
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PJX8828_R1_00001 PanJit Semiconductor PJX8828.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; SOT563
Kind of channel: enhancement
Mounting: SMD
Case: SOT563
Type of transistor: N-MOSFET x2
Drain current: 0.3A
Gate-source voltage: 10V
Drain-source voltage: 30V
Polarisation: unipolar
Kind of package: reel; tape
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PJX8839_R1_00001 PanJit Semiconductor PJX8839.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Gate-source voltage: 20V
Drain-source voltage: 60V
Drain current: 68A
Polarisation: unipolar
Case: DFN5060-8
Kind of channel: enhancement
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PM810_R2_00601 PanJit Semiconductor PM810.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 170A; M8
Case: M8
Type of bridge rectifier: single-phase
Max. forward voltage: 1.05V
Load current: 8A
Max. forward impulse current: 170A
Max. off-state voltage: 1kV
Electrical mounting: SMT
Produkt ist nicht verfügbar
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PMS210_R2_00601 PanJit Semiconductor PMS210.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 70A; M4
Case: M4
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1.05V
Load current: 2A
Max. forward impulse current: 70A
Max. off-state voltage: 1kV
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PMS310_R2_00601 PanJit Semiconductor PMS310.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 3A; Ifsm: 110A; M4
Case: M4
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1.05V
Load current: 3A
Max. forward impulse current: 110A
Max. off-state voltage: 1kV
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PMS410_R2_00601 PMS410_R2_00601 PanJit Semiconductor PMS410.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 120A; M4
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Case: M4
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1.05V
Load current: 4A
Max. forward impulse current: 120A
Max. off-state voltage: 1kV
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PMSM608_R2_00301 PanJit Semiconductor Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 150A; M6
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1V
Load current: 6A
Max. forward impulse current: 150A
Case: M6
Max. off-state voltage: 0.8kV
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PMSM810_R2_00301 PanJit Semiconductor Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 200A; M6
Case: M6
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1V
Load current: 8A
Max. forward impulse current: 200A
Max. off-state voltage: 1kV
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PS1223-D32_R1_00301 PanJit Semiconductor PS1223-D32 Category: Protection diodes - arrays
Description: Diode: TVS; 5V; 5A; bidirectional; DFN2; Ch: 1
Type of diode: TVS
Breakdown voltage: 5V
Max. forward impulse current: 5A
Semiconductor structure: bidirectional
Mounting: SMD
Case: DFN2
Max. off-state voltage: 2.8V
Leakage current: 0.5µA
Number of channels: 1
Capacitance: 0.17pF
Produkt ist nicht verfügbar
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PJQ5526_R2_00201
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 73A; DFN5060-8
Mounting: SMD
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: 20V
Drain-source voltage: 30V
Drain current: 73A
Produkt ist nicht verfügbar
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PJQ5546V-AU_R2_002A1 PJQ5546V-AU.pdf
PJQ5546V-AU_R2_002A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 79A; Idm: 316A; 65W; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 79A
Pulsed drain current: 316A
Power dissipation: 65W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 7.3mΩ
Mounting: SMD
Gate charge: 23nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJQ5808-AU_R2_002A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -30V; -31A; DFN5060-8
Kind of package: reel; tape
Case: DFN5060-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain current: -31A
Drain-source voltage: -30V
Gate-source voltage: 25V
Application: automotive industry
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PJQ5846-AU_R2_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 40A; DFN5060-8
Kind of package: reel; tape
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: 20V
Drain current: 40A
Drain-source voltage: 40V
Application: automotive industry
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PJQ5846_R2_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 40V; 40A; DFN5060-8
Kind of package: reel; tape
Case: DFN5060-8
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Polarisation: unipolar
Gate-source voltage: 20V
Drain current: 40A
Drain-source voltage: 40V
Produkt ist nicht verfügbar
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PJS6600_S1_00001 PJS6600
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20V; 4.1A; SOT23-6
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.1A
Case: SOT23-6
Gate-source voltage: 12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJS6601-AU_S1_000A1 PJS6601-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20V; 4.1A; SOT23-6
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 4.1A
Case: SOT23-6
Gate-source voltage: 12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJS6601_S1_00001
PJS6601_S1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 4.1/-3.1A; 1.25W
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 4.1/-3.1A
Case: SOT23-6
Gate-source voltage: ±12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 4.6/5.4nC
On-state resistance: 95/190mΩ
Power dissipation: 1.25W
auf Bestellung 2586 Stücke:
Lieferzeit 14-21 Tag (e)
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162+0.44 EUR
234+0.31 EUR
307+0.23 EUR
345+0.21 EUR
500+0.19 EUR
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PJS6602_S1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20V; 5.2A; SOT23-6
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 5.2A
Case: SOT23-6
Gate-source voltage: 12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJS6603_S1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30V; 4.2A; SOT23-6
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.2A
Case: SOT23-6
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJS6604_S1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 4A; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4A
Case: SOT23-6
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJS6815_S1_00001 PJS6815.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 360mA; SOT363
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Mounting: SMD
Case: SOT363
Drain current: 0.36A
Gate-source voltage: 20V
Drain-source voltage: 50V
Polarisation: unipolar
Produkt ist nicht verfügbar
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PJSD03LCFN2_R1_00501
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5.4V; 6A; bidirectional; DFN1006-2; Ch: 1
Type of diode: TVS
Case: DFN1006-2
Mounting: SMD
Max. off-state voltage: 3.3V
Semiconductor structure: bidirectional
Capacitance: 25pF
Leakage current: 2.5µA
Max. forward impulse current: 6A
Number of channels: 1
Breakdown voltage: 5.4V
Produkt ist nicht verfügbar
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PJSD03TS-AU_R1_000A1 PJSD03TS-AU_SERIES.pdf
PJSD03TS-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 120W; 4V; 5A; unidirectional; SOD523; reel,tape
Mounting: SMD
Capacitance: 0.2nF
Leakage current: 0.2mA
Max. forward impulse current: 5A
Max. off-state voltage: 3.3V
Breakdown voltage: 4V
Peak pulse power dissipation: 0.12kW
Application: automotive industry
Version: ESD
Case: SOD523
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
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PJSD03TS_R1_00001 PJSD03TS_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 4V; 5A; 0.12kW; unidirectional; SOD523; Ch: 1
Type of diode: TVS
Breakdown voltage: 4V
Max. forward impulse current: 5A
Peak pulse power dissipation: 0.12kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOD523
Max. off-state voltage: 3.3V
Leakage current: 0.2mA
Number of channels: 1
Capacitance: 0.2nF
Produkt ist nicht verfügbar
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PJSD05CFN2_R1_00501
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 15A; bidirectional; DFN1006-2; Ch: 1
Semiconductor structure: bidirectional
Case: DFN1006-2
Mounting: SMD
Type of diode: TVS
Capacitance: 70pF
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 15A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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PJSD05CTM_R1_00001
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5.78V; 1A; 0.1kW; bidirectional; SOD923; Ch: 1
Semiconductor structure: bidirectional
Case: SOD923
Mounting: SMD
Type of diode: TVS
Capacitance: 30pF
Leakage current: 1µA
Number of channels: 1
Max. forward impulse current: 1A
Max. off-state voltage: 5V
Breakdown voltage: 5.78V
Peak pulse power dissipation: 0.1kW
Produkt ist nicht verfügbar
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PJSD05CW-AU_R1_000A1 PJSD05CW-AU_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6.37V; 24A; 0.35kW; bidirectional; SOD323; Ch: 1
Application: automotive industry
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Type of diode: TVS
Capacitance: 0.2nF
Leakage current: 5µA
Number of channels: 1
Max. forward impulse current: 24A
Max. off-state voltage: 5V
Breakdown voltage: 6.37V
Peak pulse power dissipation: 0.35kW
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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PJSD05CW_R1_00001 PJSD36CW
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 7.04V; 24A; 0.35kW; bidirectional; SOD323; Ch: 1
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Type of diode: TVS
Capacitance: 0.2nF
Leakage current: 5µA
Number of channels: 1
Max. forward impulse current: 24A
Max. off-state voltage: 5V
Breakdown voltage: 7.04V
Peak pulse power dissipation: 0.35kW
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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PJSD05TS-AU_R1_000A1 PJSD03TS-AU_SERIES.pdf
PJSD05TS-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 120W; 6V; 5A; unidirectional; SOD523; reel,tape
Mounting: SMD
Capacitance: 0.11nF
Leakage current: 5µA
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 6V
Peak pulse power dissipation: 0.12kW
Application: automotive industry
Version: ESD
Case: SOD523
Kind of package: reel; tape
Type of diode: TVS
Semiconductor structure: unidirectional
auf Bestellung 4548 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
358+0.2 EUR
468+0.15 EUR
618+0.12 EUR
695+0.1 EUR
747+0.096 EUR
1000+0.093 EUR
2500+0.086 EUR
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PJSD07TS-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 7.5V; 8.8A; 0.12kW; unidirectional; SOD523; Ch: 1
Mounting: SMD
Capacitance: 85pF
Leakage current: 0.15µA
Max. forward impulse current: 8.8A
Number of channels: 1
Max. off-state voltage: 7V
Breakdown voltage: 7.5V
Peak pulse power dissipation: 0.12kW
Application: automotive industry
Case: SOD523
Type of diode: TVS
Semiconductor structure: unidirectional
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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PJSD08TS-AU_R1_007A1
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 8.5V; 5A; unidirectional; SOD523; Ch: 1
Mounting: SMD
Capacitance: 70pF
Leakage current: 5µA
Max. forward impulse current: 5A
Number of channels: 1
Max. off-state voltage: 8V
Breakdown voltage: 8.5V
Application: automotive industry
Case: SOD523
Type of diode: TVS
Semiconductor structure: unidirectional
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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PJSD12TS-AU_R1_000A1 PJSD03TS-AU_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 13.3V; 5A; 0.12kW; unidirectional; SOD523; Ch: 1
Mounting: SMD
Capacitance: 60pF
Leakage current: 5µA
Max. forward impulse current: 5A
Number of channels: 1
Max. off-state voltage: 12V
Breakdown voltage: 13.3V
Peak pulse power dissipation: 0.12kW
Application: automotive industry
Case: SOD523
Type of diode: TVS
Semiconductor structure: unidirectional
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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PJSD15TS-AU_R1_000A1 PJSD15TS-AU_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 16.6V; 5A; 0.12kW; unidirectional; SOD523; Ch: 1
Mounting: SMD
Capacitance: 50pF
Leakage current: 5µA
Max. forward impulse current: 5A
Number of channels: 1
Max. off-state voltage: 15V
Breakdown voltage: 16.6V
Peak pulse power dissipation: 0.12kW
Application: automotive industry
Case: SOD523
Type of diode: TVS
Semiconductor structure: unidirectional
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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PJSD24TS-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 26.7V; 3A; 0.12kW; unidirectional; SOD523; Ch: 1
Mounting: SMD
Capacitance: 25pF
Leakage current: 5µA
Max. forward impulse current: 3A
Number of channels: 1
Max. off-state voltage: 24V
Breakdown voltage: 26.7V
Peak pulse power dissipation: 0.12kW
Application: automotive industry
Case: SOD523
Type of diode: TVS
Semiconductor structure: unidirectional
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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PJSD24TS_R1_00001 PJSD03TS_SERIES.pdf
PJSD24TS_R1_00001
Hersteller: PanJit Semiconductor
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 120W; 26.7V; unidirectional; SOD523; reel,tape
Type of diode: TVS
Case: SOD523
Mounting: SMD
Max. off-state voltage: 24V
Semiconductor structure: unidirectional
Capacitance: 25pF
Leakage current: 5µA
Kind of package: reel; tape
Breakdown voltage: 26.7V
Peak pulse power dissipation: 0.12kW
Version: ESD
Produkt ist nicht verfügbar
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PJSD36CW-AU_R1_000A1 PJSD05CW-AU_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 40.57V; 3A; 0.35kW; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 36V
Breakdown voltage: 40.57V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 1µA
Capacitance: 45pF
Number of channels: 1
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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PJSD36CW_R1_00001 PJSD05CW_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 29.4V; 3A; 0.35kW; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Breakdown voltage: 29.4V
Max. forward impulse current: 3A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 36V
Leakage current: 1µA
Number of channels: 1
Capacitance: 45pF
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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PJSD36TS-AU_R1_000A1 PJSD03TS-AU_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 40V; 1A; 0.12kW; unidirectional; SOD523; Ch: 1
Mounting: SMD
Capacitance: 20pF
Leakage current: 5µA
Max. forward impulse current: 1A
Number of channels: 1
Max. off-state voltage: 36V
Breakdown voltage: 40V
Peak pulse power dissipation: 0.12kW
Application: automotive industry
Case: SOD523
Type of diode: TVS
Semiconductor structure: unidirectional
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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PJSOT24C-05-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 29.4V; 12A; 0.35kW; unidirectional; SOT23; Ch: 2
Type of diode: TVS
Breakdown voltage: 29.4V
Max. forward impulse current: 12A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Leakage current: 1µA
Number of channels: 2
Capacitance: 0.15nF
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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PJSOT36_R1_00501
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 40V; 9A; 0.5kW; unidirectional; SOT23; Ch: 1
Mounting: SMD
Number of channels: 1
Max. forward impulse current: 9A
Max. off-state voltage: 36V
Breakdown voltage: 40V
Peak pulse power dissipation: 0.5kW
Semiconductor structure: unidirectional
Case: SOT23
Type of diode: TVS
Capacitance: 80pF
Leakage current: 1µA
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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PJT7600_R1_00001 PJT7600.pdf
PJT7600_R1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 1A/-700mA
Gate charge: 1.6/2.2nC
On-state resistance: 400/600mΩ
Power dissipation: 0.35W
Gate-source voltage: ±8V
auf Bestellung 2685 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
139+0.51 EUR
226+0.32 EUR
358+0.2 EUR
500+0.15 EUR
1000+0.13 EUR
Mindestbestellmenge: 139 Stücke
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PJT7603_R1_00001 PJT7603.pdf
PJT7603_R1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 50/-60V
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 50/-60V
Drain current: -250/400mA
Gate charge: 0.95/1.1nC
On-state resistance: 2.5/6Ω
Power dissipation: 0.35W
Gate-source voltage: ±20V
auf Bestellung 2750 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
239+0.3 EUR
350+0.2 EUR
635+0.11 EUR
828+0.086 EUR
1000+0.08 EUR
Mindestbestellmenge: 239 Stücke
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PJT7800_R1_00001 PJT7800.pdf
PJT7800_R1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT363
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 4A
Drain current: 1A
Gate charge: 1.6nC
On-state resistance: 0.4Ω
Power dissipation: 0.35W
Gate-source voltage: ±8V
auf Bestellung 5968 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
455+0.16 EUR
596+0.12 EUR
650+0.11 EUR
715+0.1 EUR
1000+0.092 EUR
3000+0.09 EUR
Mindestbestellmenge: 455 Stücke
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PJT7801_R1_00001 PJT7801.pdf
PJT7801_R1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -700mA; Idm: -2.8A; 350mW
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -2.8A
Drain current: -0.7A
Gate charge: 2.2nC
On-state resistance: 0.6Ω
Power dissipation: 0.35W
Gate-source voltage: ±8V
auf Bestellung 2845 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
125+0.57 EUR
260+0.28 EUR
575+0.12 EUR
642+0.11 EUR
695+0.1 EUR
758+0.094 EUR
1000+0.089 EUR
Mindestbestellmenge: 125 Stücke
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PJT7808_R1_00001 PJT7808.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -0.25A
Gate-source voltage: 20V
Produkt ist nicht verfügbar
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PJT7812_R1_00001 PJT7812.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -250mA
Case: SOT363
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJT7838_R1_00001 PJT7838.pdf
PJT7838_R1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 400mA; Idm: 1.2A; 350mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.4A
Pulsed drain current: 1.2A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 0.95nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 7648 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
417+0.17 EUR
527+0.14 EUR
569+0.13 EUR
596+0.12 EUR
1000+0.11 EUR
3000+0.1 EUR
Mindestbestellmenge: 417 Stücke
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PJUSB208_R1_00001
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 85V; unidirectional; SOT23-6L; Ch: 4
Mounting: SMD
Case: SOT23-6L
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 1pF
Leakage current: 1µA
Number of channels: 4
Max. off-state voltage: 70V
Breakdown voltage: 85V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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PJW3P06A-AU_R2_007A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3A
Case: SOT223
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJW3P06A_R2_00701
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3A
Case: SOT223
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW4N06A-AU_R2_000A1 PJW4N06A-AU.pdf
PJW4N06A-AU_R2_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; Idm: 8A; 2.6W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Pulsed drain current: 8A
Power dissipation: 2.6W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJW4N06A_R2_00001 PJW4N06A.pdf
PJW4N06A_R2_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 8A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 42500 Stücke
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PJW4P06A-AU_R2_007A1 PJW4P06A-AU.pdf
PJW4P06A-AU_R2_007A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4A; Idm: -16A; 3.1W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4A
Case: SOT223
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -16A
Application: automotive industry
Gate charge: 10nC
On-state resistance: 0.13Ω
Power dissipation: 3.1W
auf Bestellung 5624 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
97+0.74 EUR
146+0.49 EUR
229+0.31 EUR
272+0.26 EUR
500+0.23 EUR
1000+0.22 EUR
Mindestbestellmenge: 97 Stücke
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PJW4P06A_R2_00701
PJW4P06A_R2_00701
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4A; Idm: -16A; 3.1W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4A
Case: SOT223
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -16A
Gate charge: 10nC
On-state resistance: 0.13Ω
Power dissipation: 3.1W
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
55+1.3 EUR
Mindestbestellmenge: 55 Stücke
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PJW5P06A-AU_R2_000A1
PJW5P06A-AU_R2_000A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5A; Idm: -20A; 1W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5A
Case: SOT223
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -20A
Application: automotive industry
Gate charge: 17nC
On-state resistance: 85mΩ
Power dissipation: 1W
Produkt ist nicht verfügbar
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PJW5P06A_R2_00701
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5A; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5A
Case: SOT223
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJX138K_R1_00001
PJX138K_R1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; Idm: 1.2A; 223mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Pulsed drain current: 1.2A
Power dissipation: 223mW
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3722 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
278+0.26 EUR
477+0.15 EUR
823+0.087 EUR
916+0.078 EUR
964+0.074 EUR
Mindestbestellmenge: 278 Stücke
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PJX8603_R1_00001 PJX8603.pdf
PJX8603_R1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 50/-60V; 360/-200mA; 300mW
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 50/-60V
Drain current: 360/-200mA
Power dissipation: 0.3W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 2.5/7Ω
Mounting: SMD
Gate charge: 0.95/1.1nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1647 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPreis
200+0.36 EUR
327+0.22 EUR
468+0.15 EUR
582+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 200 Stücke
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PJX8812_R1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; SOT563
Polarisation: unipolar
Kind of channel: enhancement
Mounting: SMD
Case: SOT563
Type of transistor: N-MOSFET x2
Drain current: 0.3A
Gate-source voltage: 10V
Drain-source voltage: 30V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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PJX8828-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; SOT563
Kind of channel: enhancement
Mounting: SMD
Case: SOT563
Type of transistor: N-MOSFET x2
Drain current: 0.3A
Gate-source voltage: 10V
Drain-source voltage: 30V
Polarisation: unipolar
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
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PJX8828_R1_00001 PJX8828.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; SOT563
Kind of channel: enhancement
Mounting: SMD
Case: SOT563
Type of transistor: N-MOSFET x2
Drain current: 0.3A
Gate-source voltage: 10V
Drain-source voltage: 30V
Polarisation: unipolar
Kind of package: reel; tape
Produkt ist nicht verfügbar
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PJX8839_R1_00001 PJX8839.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Gate-source voltage: 20V
Drain-source voltage: 60V
Drain current: 68A
Polarisation: unipolar
Case: DFN5060-8
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PM810_R2_00601 PM810.pdf
Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 170A; M8
Case: M8
Type of bridge rectifier: single-phase
Max. forward voltage: 1.05V
Load current: 8A
Max. forward impulse current: 170A
Max. off-state voltage: 1kV
Electrical mounting: SMT
Produkt ist nicht verfügbar
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PMS210_R2_00601 PMS210.pdf
Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 70A; M4
Case: M4
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1.05V
Load current: 2A
Max. forward impulse current: 70A
Max. off-state voltage: 1kV
Produkt ist nicht verfügbar
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PMS310_R2_00601 PMS310.pdf
Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 3A; Ifsm: 110A; M4
Case: M4
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1.05V
Load current: 3A
Max. forward impulse current: 110A
Max. off-state voltage: 1kV
Produkt ist nicht verfügbar
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PMS410_R2_00601 PMS410.pdf
PMS410_R2_00601
Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 120A; M4
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Case: M4
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1.05V
Load current: 4A
Max. forward impulse current: 120A
Max. off-state voltage: 1kV
Produkt ist nicht verfügbar
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PMSM608_R2_00301
Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 150A; M6
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1V
Load current: 6A
Max. forward impulse current: 150A
Case: M6
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
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PMSM810_R2_00301
Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 200A; M6
Case: M6
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1V
Load current: 8A
Max. forward impulse current: 200A
Max. off-state voltage: 1kV
Produkt ist nicht verfügbar
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PS1223-D32_R1_00301 PS1223-D32
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5V; 5A; bidirectional; DFN2; Ch: 1
Type of diode: TVS
Breakdown voltage: 5V
Max. forward impulse current: 5A
Semiconductor structure: bidirectional
Mounting: SMD
Case: DFN2
Max. off-state voltage: 2.8V
Leakage current: 0.5µA
Number of channels: 1
Capacitance: 0.17pF
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
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