Produkte > PANJIT SEMICONDUCTOR > Alle Produkte des Herstellers PANJIT SEMICONDUCTOR (1597) > Seite 22 nach 27
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||
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| PJE8401_R1_00001 | PanJit Semiconductor |
 Category: SMD N channel transistorsDescription: Transistor: N-MOSFET; unipolar; 20V; 900mA; SOT523 Case: SOT523 Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.9A Gate-source voltage: 12V Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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PJE8402_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 2.8A; 300mW; SOT523 Case: SOT523 Polarisation: unipolar Drain-source voltage: 20V Pulsed drain current: 2.8A Drain current: 0.7A Gate charge: 1.6nC Power dissipation: 0.3W On-state resistance: 0.4Ω Gate-source voltage: ±8V Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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PJE8403_R1_00001 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -20V; -600mA; Idm: -2.4A; 300mW Case: SOT523 Polarisation: unipolar Drain-source voltage: -20V Pulsed drain current: -2.4A Drain current: -0.6A Gate charge: 2.2nC Power dissipation: 0.3W On-state resistance: 0.6Ω Gate-source voltage: ±8V Kind of channel: enhancement Mounting: SMD Type of transistor: P-MOSFET Kind of package: reel; tape |
auf Bestellung 3975 Stücke: Lieferzeit 14-21 Tag (e) |
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| PJE8404_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 600mA; SOT523 Case: SOT523 Polarisation: unipolar Drain-source voltage: 30V Drain current: 0.6A Gate-source voltage: 8V Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| PJE8405_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 500mA; SOT523 Case: SOT523 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Drain current: 0.5A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: 8V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| PJE8406TB89_R1_00701 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 800mA; SC89 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.8A Case: SC89 Gate-source voltage: 12V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| PJE8407_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 500mA; SOT523 Mounting: SMD Polarisation: unipolar Drain current: 0.5A Kind of channel: enhancement Drain-source voltage: 20V Type of transistor: N-MOSFET Gate-source voltage: 10V Kind of package: reel; tape Case: SOT523 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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PJE8408_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 500mA; Idm: 1A; 300mW; SOT523 Case: SOT523 Polarisation: unipolar Drain-source voltage: 20V Pulsed drain current: 1A Drain current: 0.5A Gate charge: 1.4nC Power dissipation: 0.3W On-state resistance: 3Ω Gate-source voltage: ±10V Kind of channel: enhancement Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape |
auf Bestellung 3480 Stücke: Lieferzeit 14-21 Tag (e) |
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| PJE8428_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; SOT523 Mounting: SMD Polarisation: unipolar Drain current: 0.3A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET Gate-source voltage: 10V Kind of package: reel; tape Case: SOT523 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| PJE8472B_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; SOT523 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.2A Case: SOT523 Gate-source voltage: 30V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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PJEC12VM1TA-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 16.5V; 3A; bidirectional; SOT23; Ch: 2 Mounting: SMD Breakdown voltage: 16.5V Max. forward impulse current: 3A Application: automotive industry Max. off-state voltage: 12V Semiconductor structure: bidirectional Leakage current: 50nA Case: SOT23 Capacitance: 10pF Type of diode: TVS Number of channels: 2 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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PJEC12VM1TA_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 16.5V; 3A; bidirectional; SOT23; Ch: 2 Mounting: SMD Breakdown voltage: 16.5V Max. forward impulse current: 3A Max. off-state voltage: 12V Semiconductor structure: bidirectional Leakage current: 50nA Case: SOT23 Capacitance: 10pF Type of diode: TVS Number of channels: 2 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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PJEC2415VM1WS-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 17.1÷30.3V; 160W; asymmetric,bidirectional; ESD; Ch: 1 Mounting: SMD Application: automotive industry Peak pulse power dissipation: 0.16kW Version: ESD Max. off-state voltage: 15...24V Kind of package: reel; tape Semiconductor structure: asymmetric; bidirectional Leakage current: 50nA Case: SOD323 Capacitance: 17pF Type of diode: TVS Number of channels: 1 Breakdown voltage: 17.1...30.3V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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PJEC2415VM1WS_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 30.3V; 3A; 0.16kW; bidirectional; SOD323; Ch: 1 Mounting: SMD Peak pulse power dissipation: 0.16kW Max. off-state voltage: 24V Semiconductor structure: bidirectional Leakage current: 50nA Case: SOD323 Type of diode: TVS Number of channels: 1 Breakdown voltage: 30.3V Max. forward impulse current: 3A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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PJEC24MTA-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 30.3V; 4A; bidirectional; SOT23; Ch: 2 Mounting: SMD Application: automotive industry Max. off-state voltage: 24V Semiconductor structure: bidirectional Leakage current: 50nA Case: SOT23 Capacitance: 11pF Type of diode: TVS Number of channels: 2 Breakdown voltage: 30.3V Max. forward impulse current: 4A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
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PJEC24MTA_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 30.3V; 4A; bidirectional; SOT23; Ch: 2 Mounting: SMD Max. off-state voltage: 24V Semiconductor structure: bidirectional Leakage current: 50nA Case: SOT23 Capacitance: 11pF Type of diode: TVS Number of channels: 2 Breakdown voltage: 30.3V Max. forward impulse current: 4A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
| PJF18N20_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 18A; ITO220AB Case: ITO220AB Mounting: SMD Drain current: 18A Gate-source voltage: 20V Drain-source voltage: 200V Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Polarisation: unipolar |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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PJGBLC03C-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS array; 4.75÷5.25V; 1A; 350W; bidirectional; SOD323; Ch: 1 Type of diode: TVS array Breakdown voltage: 4.75...5.25V Max. forward impulse current: 1A Peak pulse power dissipation: 0.35kW Semiconductor structure: bidirectional Mounting: SMD Case: SOD323 Max. off-state voltage: 3.3V Leakage current: 20µA Number of channels: 1 Kind of package: reel; tape Capacitance: 3pF Version: ESD Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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PJGBLC03C_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS array; 4.75÷5.25V; 1A; 350W; bidirectional; SOD323; Ch: 1 Type of diode: TVS array Breakdown voltage: 4.75...5.25V Max. forward impulse current: 1A Peak pulse power dissipation: 0.35kW Semiconductor structure: bidirectional Mounting: SMD Case: SOD323 Max. off-state voltage: 3.3V Leakage current: 20µA Number of channels: 1 Kind of package: reel; tape Capacitance: 3pF |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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PJGL12_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 13.3V; 5A; unidirectional; SOT23; Ch: 1 Type of diode: TVS Case: SOT23 Mounting: SMD Max. off-state voltage: 12V Semiconductor structure: unidirectional Capacitance: 1.2pF Max. forward impulse current: 5A Breakdown voltage: 13.3V Leakage current: 1µA Number of channels: 1 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||
| PJMB105N60FRC_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 35A; TO263AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 35A Case: TO263AB Gate-source voltage: 30V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| PJMB125N60FRC_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO263AB Polarisation: unipolar Drain current: 30A Kind of channel: enhancement Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: 30V Kind of package: reel; tape Case: TO263AB Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
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PJMB210N65EC_R2_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 19A Power dissipation: 150W Case: TO263 Gate-source voltage: ±30V On-state resistance: 0.21Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 42A Gate charge: 34nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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PJMBZ33A-AU_R1_007A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS array; 31.35÷34.65V; 40W; double,common anode; ESD Version: ESD Peak pulse power dissipation: 40W Application: automotive industry Max. off-state voltage: 26V Kind of package: reel; tape Semiconductor structure: common anode; double Leakage current: 50nA Case: SOT23 Type of diode: TVS array Number of channels: 2 Mounting: SMD Breakdown voltage: 31.35...34.65V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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PJMBZ6V8A-AU_R1_007A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS array; 6.46÷7.14V; 24W; double,common anode; ESD; SOT23 Type of diode: TVS array Peak pulse power dissipation: 24W Breakdown voltage: 6.46...7.14V Semiconductor structure: common anode; double Case: SOT23 Mounting: SMD Kind of package: reel; tape Leakage current: 0.5µA Max. off-state voltage: 4.5V Version: ESD Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| PJMD190N65FR2_L2_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 19.7A Case: TO252AA Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 30000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||
| PJMD280N60E1_L2_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 49.1W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13.8A Pulsed drain current: 41.4A Power dissipation: 49.1W Case: TO252AA Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: SMD Gate charge: 27nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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PJMD360N60EC_L2_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Pulsed drain current: 23A Power dissipation: 87.5W Case: TO252AA Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: SMD Gate charge: 18.7nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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PJMD580N60E1_L2_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 54W; TO252AA Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 8A Pulsed drain current: 24A Power dissipation: 54W Case: TO252AA Gate-source voltage: ±30V On-state resistance: 0.58Ω Mounting: SMD Gate charge: 15nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| PJMF060N65FR2_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 48.3A; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 48.3A Case: ITO220AB Gate-source voltage: 30V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| PJMF080N65FR2_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 29.2A; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 29.2A Case: ITO220AB Gate-source voltage: 30V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| PJMF105N60FRC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 35A; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 35A Case: ITO220AB Gate-source voltage: 30V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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PJMF120N60EC_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 33W; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 33W Case: ITO220AB Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 69A Gate charge: 51nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| PJMF125N60FRC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 29A; ITO220AB Polarisation: unipolar Drain current: 29A Kind of channel: enhancement Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: 30V Kind of package: reel; tape Case: ITO220AB Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| PJMF190N65FR2_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 19.6A; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 19.6A Case: ITO220AB Gate-source voltage: 30V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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PJMF210N65EC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 32W; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 19A Power dissipation: 32W Case: ITO220AB Gate-source voltage: ±30V On-state resistance: 0.21Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 42A Gate charge: 34nC |
auf Bestellung 46 Stücke: Lieferzeit 14-21 Tag (e) |
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PJMF280N60E1_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 34W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 13.8A Pulsed drain current: 41.4A Power dissipation: 34W Case: ITO220AB Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 27nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 94 Stücke: Lieferzeit 14-21 Tag (e) |
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PJMF280N65E1_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; Idm: 41.4A; 35.7W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 13.8A Pulsed drain current: 41.4A Power dissipation: 35.7W Case: ITO220AB Gate-source voltage: ±30V On-state resistance: 0.28Ω Mounting: THT Gate charge: 30nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 42 Stücke: Lieferzeit 14-21 Tag (e) |
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PJMF360N60EC_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 30W; ITO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 11A Pulsed drain current: 23A Power dissipation: 30W Case: ITO220AB Gate-source voltage: ±30V On-state resistance: 0.36Ω Mounting: THT Gate charge: 18.7nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
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PJMF580N60E1_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 28W; ITO220AB Case: ITO220AB Mounting: THT Kind of package: tube Pulsed drain current: 24A Power dissipation: 28W Gate charge: 15nC Polarisation: unipolar Drain current: 8A Kind of channel: enhancement Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: ±30V On-state resistance: 0.58Ω |
Produkt ist nicht verfügbar |
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PJMF990N65EC_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 22.5W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 4.7A Pulsed drain current: 9.5A Power dissipation: 22.5W Case: ITO220AB Gate-source voltage: ±30V On-state resistance: 990mΩ Mounting: THT Gate charge: 9.7nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| PJMH040N60EC_T0_00201 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 71A; Idm: 212A; 200W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 71A Pulsed drain current: 212A Power dissipation: 200W Case: TO247AD-3 Gate-source voltage: ±30V On-state resistance: 40mΩ Mounting: THT Gate charge: 144nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| PJMH042N60FRC_T0_00201 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 69A; TO247AD-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 69A Case: TO247AD-3 Gate-source voltage: 30V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| PJMH060N65FR2_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 58.3A; TO247AD-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 58.3A Case: TO247AD-3 Gate-source voltage: 30V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| PJMH074N60FRCH_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 53A; TO247AD-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 53A Case: TO247AD-3 Gate-source voltage: 30V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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PJMH074N60FRC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 53A; Idm: 117A; 446W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 53A Case: TO247AD-3 Gate-source voltage: ±30V Mounting: THT Kind of package: tube Kind of channel: enhancement On-state resistance: 74mΩ Pulsed drain current: 117A Power dissipation: 446W Gate charge: 84nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| PJMH080N65FR2_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 46A; TO247AD-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 46A Case: TO247AD-3 Gate-source voltage: 30V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| PJMH105N60FRC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 35A; TO247AD-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 35A Case: TO247AD-3 Gate-source voltage: 30V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
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PJMH120N60EC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO247AD-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 235W Case: TO247AD-3 Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 69A Gate charge: 51nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| PJMH125N60FRC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO247AD-3 Polarisation: unipolar Drain current: 30A Kind of channel: enhancement Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: 30V Kind of package: reel; tape Case: TO247AD-3 Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| PJMH190N65FR2_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO247AD-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 19.7A Case: TO247AD-3 Gate-source voltage: 20V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| PJMK040N60EC_T0_00201 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 71A; TO247AD-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 71A Case: TO247AD-3 Gate-source voltage: 40V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
| PJMK074N60FRCH_T0_00201 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 53A; TO247AD-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 53A Case: TO247AD-3 Gate-source voltage: 74V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
 |
PJMP060N65FR2_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 58.3A; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 58.3A Case: TO220AB Gate-source voltage: 30V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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|
PJMP080N65FR2_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 46A; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 46A Case: TO220AB Gate-source voltage: 30V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
| PJMP105N60FRC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 35A; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 35A Case: TO220AB Gate-source voltage: 30V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||
 |
PJMP120N60EC_T0_00001 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 30A Power dissipation: 235W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.12Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 69A Gate charge: 51nC |
auf Bestellung 196 Stücke: Lieferzeit 14-21 Tag (e) |
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PJMP125N60FRC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO220AB Polarisation: unipolar Drain current: 30A Kind of channel: enhancement Drain-source voltage: 600V Type of transistor: N-MOSFET Gate-source voltage: 30V Kind of package: reel; tape Case: TO220AB Mounting: THT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
|
|
PJMP190N65FR2_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 19.7A Case: TO220AB Gate-source voltage: 20V Mounting: THT Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||
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|
PJMP210N65EC_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 19A Power dissipation: 150W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.21Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 42A Gate charge: 34nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PJE8401_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 900mA; SOT523
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.9A
Gate-source voltage: 12V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 900mA; SOT523
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.9A
Gate-source voltage: 12V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJE8402_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 2.8A; 300mW; SOT523
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 2.8A
Drain current: 0.7A
Gate charge: 1.6nC
Power dissipation: 0.3W
On-state resistance: 0.4Ω
Gate-source voltage: ±8V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 2.8A; 300mW; SOT523
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 2.8A
Drain current: 0.7A
Gate charge: 1.6nC
Power dissipation: 0.3W
On-state resistance: 0.4Ω
Gate-source voltage: ±8V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJE8403_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -600mA; Idm: -2.4A; 300mW
Case: SOT523
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -2.4A
Drain current: -0.6A
Gate charge: 2.2nC
Power dissipation: 0.3W
On-state resistance: 0.6Ω
Gate-source voltage: ±8V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -600mA; Idm: -2.4A; 300mW
Case: SOT523
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -2.4A
Drain current: -0.6A
Gate charge: 2.2nC
Power dissipation: 0.3W
On-state resistance: 0.6Ω
Gate-source voltage: ±8V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: P-MOSFET
Kind of package: reel; tape
auf Bestellung 3975 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 264+ | 0.32 EUR |
| 417+ | 0.2 EUR |
| 667+ | 0.13 EUR |
| 807+ | 0.11 EUR |
| PJE8404_R1_00001 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 600mA; SOT523
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Gate-source voltage: 8V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 600mA; SOT523
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Gate-source voltage: 8V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJE8405_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 500mA; SOT523
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 0.5A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: 8V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 500mA; SOT523
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 0.5A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: 8V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJE8406TB89_R1_00701 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 800mA; SC89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.8A
Case: SC89
Gate-source voltage: 12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 800mA; SC89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.8A
Case: SC89
Gate-source voltage: 12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJE8407_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 500mA; SOT523
Mounting: SMD
Polarisation: unipolar
Drain current: 0.5A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: 10V
Kind of package: reel; tape
Case: SOT523
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 500mA; SOT523
Mounting: SMD
Polarisation: unipolar
Drain current: 0.5A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: 10V
Kind of package: reel; tape
Case: SOT523
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJE8408_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 500mA; Idm: 1A; 300mW; SOT523
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 1A
Drain current: 0.5A
Gate charge: 1.4nC
Power dissipation: 0.3W
On-state resistance: 3Ω
Gate-source voltage: ±10V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 500mA; Idm: 1A; 300mW; SOT523
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 1A
Drain current: 0.5A
Gate charge: 1.4nC
Power dissipation: 0.3W
On-state resistance: 3Ω
Gate-source voltage: ±10V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
auf Bestellung 3480 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 455+ | 0.19 EUR |
| 695+ | 0.12 EUR |
| 807+ | 0.11 EUR |
| PJE8428_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; SOT523
Mounting: SMD
Polarisation: unipolar
Drain current: 0.3A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: 10V
Kind of package: reel; tape
Case: SOT523
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; SOT523
Mounting: SMD
Polarisation: unipolar
Drain current: 0.3A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: 10V
Kind of package: reel; tape
Case: SOT523
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJE8472B_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Case: SOT523
Gate-source voltage: 30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Case: SOT523
Gate-source voltage: 30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJEC12VM1TA-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 16.5V; 3A; bidirectional; SOT23; Ch: 2
Mounting: SMD
Breakdown voltage: 16.5V
Max. forward impulse current: 3A
Application: automotive industry
Max. off-state voltage: 12V
Semiconductor structure: bidirectional
Leakage current: 50nA
Case: SOT23
Capacitance: 10pF
Type of diode: TVS
Number of channels: 2
Category: Protection diodes - arrays
Description: Diode: TVS; 16.5V; 3A; bidirectional; SOT23; Ch: 2
Mounting: SMD
Breakdown voltage: 16.5V
Max. forward impulse current: 3A
Application: automotive industry
Max. off-state voltage: 12V
Semiconductor structure: bidirectional
Leakage current: 50nA
Case: SOT23
Capacitance: 10pF
Type of diode: TVS
Number of channels: 2
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PJEC12VM1TA_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 16.5V; 3A; bidirectional; SOT23; Ch: 2
Mounting: SMD
Breakdown voltage: 16.5V
Max. forward impulse current: 3A
Max. off-state voltage: 12V
Semiconductor structure: bidirectional
Leakage current: 50nA
Case: SOT23
Capacitance: 10pF
Type of diode: TVS
Number of channels: 2
Category: Protection diodes - arrays
Description: Diode: TVS; 16.5V; 3A; bidirectional; SOT23; Ch: 2
Mounting: SMD
Breakdown voltage: 16.5V
Max. forward impulse current: 3A
Max. off-state voltage: 12V
Semiconductor structure: bidirectional
Leakage current: 50nA
Case: SOT23
Capacitance: 10pF
Type of diode: TVS
Number of channels: 2
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PJEC2415VM1WS-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 17.1÷30.3V; 160W; asymmetric,bidirectional; ESD; Ch: 1
Mounting: SMD
Application: automotive industry
Peak pulse power dissipation: 0.16kW
Version: ESD
Max. off-state voltage: 15...24V
Kind of package: reel; tape
Semiconductor structure: asymmetric; bidirectional
Leakage current: 50nA
Case: SOD323
Capacitance: 17pF
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 17.1...30.3V
Category: Protection diodes - arrays
Description: Diode: TVS; 17.1÷30.3V; 160W; asymmetric,bidirectional; ESD; Ch: 1
Mounting: SMD
Application: automotive industry
Peak pulse power dissipation: 0.16kW
Version: ESD
Max. off-state voltage: 15...24V
Kind of package: reel; tape
Semiconductor structure: asymmetric; bidirectional
Leakage current: 50nA
Case: SOD323
Capacitance: 17pF
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 17.1...30.3V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJEC2415VM1WS_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 30.3V; 3A; 0.16kW; bidirectional; SOD323; Ch: 1
Mounting: SMD
Peak pulse power dissipation: 0.16kW
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Leakage current: 50nA
Case: SOD323
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 30.3V
Max. forward impulse current: 3A
Category: Protection diodes - arrays
Description: Diode: TVS; 30.3V; 3A; 0.16kW; bidirectional; SOD323; Ch: 1
Mounting: SMD
Peak pulse power dissipation: 0.16kW
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Leakage current: 50nA
Case: SOD323
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 30.3V
Max. forward impulse current: 3A
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PJEC24MTA-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 30.3V; 4A; bidirectional; SOT23; Ch: 2
Mounting: SMD
Application: automotive industry
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Leakage current: 50nA
Case: SOT23
Capacitance: 11pF
Type of diode: TVS
Number of channels: 2
Breakdown voltage: 30.3V
Max. forward impulse current: 4A
Category: Protection diodes - arrays
Description: Diode: TVS; 30.3V; 4A; bidirectional; SOT23; Ch: 2
Mounting: SMD
Application: automotive industry
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Leakage current: 50nA
Case: SOT23
Capacitance: 11pF
Type of diode: TVS
Number of channels: 2
Breakdown voltage: 30.3V
Max. forward impulse current: 4A
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PJEC24MTA_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 30.3V; 4A; bidirectional; SOT23; Ch: 2
Mounting: SMD
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Leakage current: 50nA
Case: SOT23
Capacitance: 11pF
Type of diode: TVS
Number of channels: 2
Breakdown voltage: 30.3V
Max. forward impulse current: 4A
Category: Protection diodes - arrays
Description: Diode: TVS; 30.3V; 4A; bidirectional; SOT23; Ch: 2
Mounting: SMD
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Leakage current: 50nA
Case: SOT23
Capacitance: 11pF
Type of diode: TVS
Number of channels: 2
Breakdown voltage: 30.3V
Max. forward impulse current: 4A
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PJF18N20_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; ITO220AB
Case: ITO220AB
Mounting: SMD
Drain current: 18A
Gate-source voltage: 20V
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; ITO220AB
Case: ITO220AB
Mounting: SMD
Drain current: 18A
Gate-source voltage: 20V
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJGBLC03C-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 4.75÷5.25V; 1A; 350W; bidirectional; SOD323; Ch: 1
Type of diode: TVS array
Breakdown voltage: 4.75...5.25V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 3.3V
Leakage current: 20µA
Number of channels: 1
Kind of package: reel; tape
Capacitance: 3pF
Version: ESD
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS array; 4.75÷5.25V; 1A; 350W; bidirectional; SOD323; Ch: 1
Type of diode: TVS array
Breakdown voltage: 4.75...5.25V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 3.3V
Leakage current: 20µA
Number of channels: 1
Kind of package: reel; tape
Capacitance: 3pF
Version: ESD
Application: automotive industry
Produkt ist nicht verfügbar
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| PJGBLC03C_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 4.75÷5.25V; 1A; 350W; bidirectional; SOD323; Ch: 1
Type of diode: TVS array
Breakdown voltage: 4.75...5.25V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 3.3V
Leakage current: 20µA
Number of channels: 1
Kind of package: reel; tape
Capacitance: 3pF
Category: Protection diodes - arrays
Description: Diode: TVS array; 4.75÷5.25V; 1A; 350W; bidirectional; SOD323; Ch: 1
Type of diode: TVS array
Breakdown voltage: 4.75...5.25V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 3.3V
Leakage current: 20µA
Number of channels: 1
Kind of package: reel; tape
Capacitance: 3pF
Produkt ist nicht verfügbar
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| PJGL12_R1_00001 |
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 13.3V; 5A; unidirectional; SOT23; Ch: 1
Type of diode: TVS
Case: SOT23
Mounting: SMD
Max. off-state voltage: 12V
Semiconductor structure: unidirectional
Capacitance: 1.2pF
Max. forward impulse current: 5A
Breakdown voltage: 13.3V
Leakage current: 1µA
Number of channels: 1
Category: Protection diodes - arrays
Description: Diode: TVS; 13.3V; 5A; unidirectional; SOT23; Ch: 1
Type of diode: TVS
Case: SOT23
Mounting: SMD
Max. off-state voltage: 12V
Semiconductor structure: unidirectional
Capacitance: 1.2pF
Max. forward impulse current: 5A
Breakdown voltage: 13.3V
Leakage current: 1µA
Number of channels: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| PJMB105N60FRC_R2_00201 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 35A; TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 35A
Case: TO263AB
Gate-source voltage: 30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 35A; TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 35A
Case: TO263AB
Gate-source voltage: 30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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| PJMB125N60FRC_R2_00201 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO263AB
Polarisation: unipolar
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Kind of package: reel; tape
Case: TO263AB
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO263AB
Polarisation: unipolar
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Kind of package: reel; tape
Case: TO263AB
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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| PJMB210N65EC_R2_00601 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 42A
Gate charge: 34nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 150W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 42A
Gate charge: 34nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJMBZ33A-AU_R1_007A1 |
|
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 31.35÷34.65V; 40W; double,common anode; ESD
Version: ESD
Peak pulse power dissipation: 40W
Application: automotive industry
Max. off-state voltage: 26V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Leakage current: 50nA
Case: SOT23
Type of diode: TVS array
Number of channels: 2
Mounting: SMD
Breakdown voltage: 31.35...34.65V
Category: Protection diodes - arrays
Description: Diode: TVS array; 31.35÷34.65V; 40W; double,common anode; ESD
Version: ESD
Peak pulse power dissipation: 40W
Application: automotive industry
Max. off-state voltage: 26V
Kind of package: reel; tape
Semiconductor structure: common anode; double
Leakage current: 50nA
Case: SOT23
Type of diode: TVS array
Number of channels: 2
Mounting: SMD
Breakdown voltage: 31.35...34.65V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJMBZ6V8A-AU_R1_007A1 |
|
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.46÷7.14V; 24W; double,common anode; ESD; SOT23
Type of diode: TVS array
Peak pulse power dissipation: 24W
Breakdown voltage: 6.46...7.14V
Semiconductor structure: common anode; double
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Leakage current: 0.5µA
Max. off-state voltage: 4.5V
Version: ESD
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS array; 6.46÷7.14V; 24W; double,common anode; ESD; SOT23
Type of diode: TVS array
Peak pulse power dissipation: 24W
Breakdown voltage: 6.46...7.14V
Semiconductor structure: common anode; double
Case: SOT23
Mounting: SMD
Kind of package: reel; tape
Leakage current: 0.5µA
Max. off-state voltage: 4.5V
Version: ESD
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJMD190N65FR2_L2_00601 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.7A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.7A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 30000 Stücke
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Stück im Wert von UAH
| PJMD280N60E1_L2_00601 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 49.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 49.1W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 49.1W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 49.1W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: SMD
Gate charge: 27nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJMD360N60EC_L2_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 18.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 87.5W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 87.5W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: SMD
Gate charge: 18.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJMD580N60E1_L2_00001 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 54W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 54W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 54W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 8A
Pulsed drain current: 24A
Power dissipation: 54W
Case: TO252AA
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Mounting: SMD
Gate charge: 15nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJMF060N65FR2_T0_00601 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 48.3A; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 48.3A
Case: ITO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 48.3A; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 48.3A
Case: ITO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJMF080N65FR2_T0_00601 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 29.2A; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 29.2A
Case: ITO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 29.2A; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 29.2A
Case: ITO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJMF105N60FRC_T0_00601 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 35A; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 35A
Case: ITO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 35A; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 35A
Case: ITO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJMF120N60EC_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 33W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 33W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 51nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 33W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 33W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 51nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJMF125N60FRC_T0_00601 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29A; ITO220AB
Polarisation: unipolar
Drain current: 29A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Kind of package: reel; tape
Case: ITO220AB
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 29A; ITO220AB
Polarisation: unipolar
Drain current: 29A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Kind of package: reel; tape
Case: ITO220AB
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJMF190N65FR2_T0_00601 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.6A; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.6A
Case: ITO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.6A; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.6A
Case: ITO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJMF210N65EC_T0_00601 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 32W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 32W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42A
Gate charge: 34nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 32W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 32W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42A
Gate charge: 34nC
auf Bestellung 46 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 23+ | 3.87 EUR |
| 40+ | 2.17 EUR |
| PJMF280N60E1_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 34W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 13.8A; Idm: 41.4A; 34W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 34W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 27nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 94 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 28+ | 3.09 EUR |
| 47+ | 1.83 EUR |
| 52+ | 1.67 EUR |
| PJMF280N65E1_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; Idm: 41.4A; 35.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 35.7W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 13.8A; Idm: 41.4A; 35.7W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 13.8A
Pulsed drain current: 41.4A
Power dissipation: 35.7W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.28Ω
Mounting: THT
Gate charge: 30nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 42 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 26+ | 3.37 EUR |
| 34+ | 2.52 EUR |
| PJMF360N60EC_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 30W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 30W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 11A; Idm: 23A; 30W; ITO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 11A
Pulsed drain current: 23A
Power dissipation: 30W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 0.36Ω
Mounting: THT
Gate charge: 18.7nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJMF580N60E1_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 28W; ITO220AB
Case: ITO220AB
Mounting: THT
Kind of package: tube
Pulsed drain current: 24A
Power dissipation: 28W
Gate charge: 15nC
Polarisation: unipolar
Drain current: 8A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 8A; Idm: 24A; 28W; ITO220AB
Case: ITO220AB
Mounting: THT
Kind of package: tube
Pulsed drain current: 24A
Power dissipation: 28W
Gate charge: 15nC
Polarisation: unipolar
Drain current: 8A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
On-state resistance: 0.58Ω
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJMF990N65EC_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 22.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.7A
Pulsed drain current: 9.5A
Power dissipation: 22.5W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 990mΩ
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 4.7A; Idm: 9.5A; 22.5W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 4.7A
Pulsed drain current: 9.5A
Power dissipation: 22.5W
Case: ITO220AB
Gate-source voltage: ±30V
On-state resistance: 990mΩ
Mounting: THT
Gate charge: 9.7nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJMH040N60EC_T0_00201 |
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 71A; Idm: 212A; 200W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 71A
Pulsed drain current: 212A
Power dissipation: 200W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 144nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 71A; Idm: 212A; 200W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 71A
Pulsed drain current: 212A
Power dissipation: 200W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 40mΩ
Mounting: THT
Gate charge: 144nC
Kind of package: tube
Kind of channel: enhancement
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| PJMH042N60FRC_T0_00201 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 69A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 69A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 69A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 69A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| PJMH060N65FR2_T0_00601 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 58.3A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 58.3A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 58.3A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 58.3A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJMH074N60FRCH_T0_00601 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJMH074N60FRC_T0_00601 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; Idm: 117A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Case: TO247AD-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 74mΩ
Pulsed drain current: 117A
Power dissipation: 446W
Gate charge: 84nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; Idm: 117A; 446W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Case: TO247AD-3
Gate-source voltage: ±30V
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
On-state resistance: 74mΩ
Pulsed drain current: 117A
Power dissipation: 446W
Gate charge: 84nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJMH080N65FR2_T0_00601 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJMH105N60FRC_T0_00601 |
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 35A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 35A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 35A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 35A
Case: TO247AD-3
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJMH120N60EC_T0_00601 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 51nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO247AD-3
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 51nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJMH125N60FRC_T0_00601 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO247AD-3
Polarisation: unipolar
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Kind of package: reel; tape
Case: TO247AD-3
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO247AD-3
Polarisation: unipolar
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Kind of package: reel; tape
Case: TO247AD-3
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJMH190N65FR2_T0_00601 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.7A
Case: TO247AD-3
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.7A
Case: TO247AD-3
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJMK040N60EC_T0_00201 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 71A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 71A
Case: TO247AD-3
Gate-source voltage: 40V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 71A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 71A
Case: TO247AD-3
Gate-source voltage: 40V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJMK074N60FRCH_T0_00201 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Case: TO247AD-3
Gate-source voltage: 74V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 53A; TO247AD-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 53A
Case: TO247AD-3
Gate-source voltage: 74V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJMP060N65FR2_T0_00601 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 58.3A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 58.3A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 58.3A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 58.3A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJMP080N65FR2_T0_00601 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJMP105N60FRC_T0_00601 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 35A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 35A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 35A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 35A
Case: TO220AB
Gate-source voltage: 30V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJMP120N60EC_T0_00001 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 51nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; Idm: 69A; 235W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 30A
Power dissipation: 235W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.12Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 69A
Gate charge: 51nC
auf Bestellung 196 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 16+ | 5.33 EUR |
| 18+ | 4.76 EUR |
| 50+ | 4 EUR |
| 100+ | 3.59 EUR |
| PJMP125N60FRC_T0_00601 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO220AB
Polarisation: unipolar
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Kind of package: reel; tape
Case: TO220AB
Mounting: THT
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 30A; TO220AB
Polarisation: unipolar
Drain current: 30A
Kind of channel: enhancement
Drain-source voltage: 600V
Type of transistor: N-MOSFET
Gate-source voltage: 30V
Kind of package: reel; tape
Case: TO220AB
Mounting: THT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJMP190N65FR2_T0_00601 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.7A
Case: TO220AB
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19.7A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19.7A
Case: TO220AB
Gate-source voltage: 20V
Mounting: THT
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| PJMP210N65EC_T0_00601 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42A
Gate charge: 34nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 19A; Idm: 42A; 150W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 19A
Power dissipation: 150W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.21Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 42A
Gate charge: 34nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH