Produkte > PANJIT SEMICONDUCTOR > Alle Produkte des Herstellers PANJIT SEMICONDUCTOR (1597) > Seite 24 nach 27

Wählen Sie Seite:   [  << Vorherige Seite ]  1 2 4 6 8 10 12 14 16 18 19 20 21 22 23 24 25 26 27  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
PJSOT24C-05-AU_R1_000A1 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 29.4V; 12A; 0.35kW; unidirectional; SOT23; Ch: 2
Type of diode: TVS
Breakdown voltage: 29.4V
Max. forward impulse current: 12A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Leakage current: 1µA
Number of channels: 2
Capacitance: 0.15nF
Application: automotive industry
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJT138K-AU_R1_000A1 PJT138K-AU_R1_000A1 PanJit Semiconductor Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 360mA; Idm: 1.2A; 236mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.36A
Pulsed drain current: 1.2A
Power dissipation: 0.236W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
239+0.36 EUR
394+0.21 EUR
656+0.13 EUR
903+0.094 EUR
1000+0.088 EUR
Mindestbestellmenge: 239 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJT7002H_R1_00001 PJT7002H_R1_00001 PanJit Semiconductor PJT7002H.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30V; 300mA; SOT363
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 0.3A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N/P-MOSFET
Gate-source voltage: 10V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJT7002KDW_R1_00501 PJT7002KDW_R1_00501 PanJit Semiconductor Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30V; 300mA; SOT363
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 0.3A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N/P-MOSFET
Gate-source voltage: 10V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJT7600_R1_00001 PJT7600_R1_00001 PanJit Semiconductor PJT7600.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 1A/-700mA
Gate charge: 1.6/2.2nC
On-state resistance: 400/600mΩ
Power dissipation: 0.35W
Gate-source voltage: ±8V
auf Bestellung 2685 Stücke:
Lieferzeit 14-21 Tag (e)
139+0.61 EUR
226+0.38 EUR
358+0.24 EUR
500+0.18 EUR
1000+0.15 EUR
Mindestbestellmenge: 139 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJT7603_R1_00001 PJT7603_R1_00001 PanJit Semiconductor PJT7603.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 50/-60V
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 50/-60V
Drain current: -250/400mA
Gate charge: 0.95/1.1nC
On-state resistance: 2.5/6Ω
Power dissipation: 0.35W
Gate-source voltage: ±20V
auf Bestellung 2750 Stücke:
Lieferzeit 14-21 Tag (e)
239+0.36 EUR
350+0.24 EUR
635+0.13 EUR
828+0.1 EUR
1000+0.095 EUR
Mindestbestellmenge: 239 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJT7800_R1_00001 PJT7800_R1_00001 PanJit Semiconductor PJT7800.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT363
Mounting: SMD
Pulsed drain current: 4A
Power dissipation: 0.35W
Gate charge: 1.6nC
Polarisation: unipolar
Drain current: 1A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: SOT363
On-state resistance: 0.4Ω
auf Bestellung 5968 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.19 EUR
596+0.14 EUR
650+0.13 EUR
715+0.12 EUR
1000+0.11 EUR
3000+0.11 EUR
Mindestbestellmenge: 455 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJT7801_R1_00001 PJT7801_R1_00001 PanJit Semiconductor PJT7801.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -700mA; Idm: -2.8A; 350mW
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -2.8A
Drain current: -0.7A
Gate charge: 2.2nC
On-state resistance: 0.6Ω
Power dissipation: 0.35W
Gate-source voltage: ±8V
auf Bestellung 2845 Stücke:
Lieferzeit 14-21 Tag (e)
125+0.68 EUR
260+0.33 EUR
575+0.14 EUR
642+0.13 EUR
695+0.12 EUR
758+0.11 EUR
1000+0.11 EUR
Mindestbestellmenge: 125 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJT7808_R1_00001 PJT7808_R1_00001 PanJit Semiconductor PJT7808.pdf Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain current: -250mA
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET x2
Gate-source voltage: 20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJT7812_R1_00001 PanJit Semiconductor PJT7812.pdf Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -250mA
Case: SOT363
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJT7838_R1_00001 PJT7838_R1_00001 PanJit Semiconductor PJT7838.pdf Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 400mA; Idm: 1.2A; 350mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.4A
Pulsed drain current: 1.2A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 0.95nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 7647 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.2 EUR
527+0.17 EUR
569+0.15 EUR
596+0.14 EUR
1000+0.13 EUR
3000+0.12 EUR
Mindestbestellmenge: 417 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJUSB05-4_R1_00001 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 6.37V; 0.15kW; unidirectional; SOT23-6L; Ch: 5
Type of diode: TVS
Breakdown voltage: 6.37V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23-6L
Max. off-state voltage: 5V
Leakage current: 1µA
Number of channels: 5
Capacitance: 8.5pF
Peak pulse power dissipation: 0.15kW
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJUSB208_R1_00001 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 85V; unidirectional; SOT23-6L; Ch: 4
Type of diode: TVS
Breakdown voltage: 85V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23-6L
Max. off-state voltage: 70V
Leakage current: 1µA
Number of channels: 4
Capacitance: 1pF
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJUSB208_S1_00001 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 85V; unidirectional; SOT23-6L; Ch: 4
Type of diode: TVS
Breakdown voltage: 85V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23-6L
Max. off-state voltage: 70V
Leakage current: 1µA
Number of channels: 4
Capacitance: 1pF
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJW3P06A-AU_R2_007A1 PanJit Semiconductor Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3A
Case: SOT223
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW3P06A_R2_00701 PanJit Semiconductor Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3A
Case: SOT223
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW4N06A-AU_R2_000A1 PJW4N06A-AU_R2_000A1 PanJit Semiconductor PJW4N06A-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; Idm: 8A; 2.6W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Pulsed drain current: 8A
Power dissipation: 2.6W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
 Mindestbestellmenge: 42500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJW4N06A_R2_00001 PJW4N06A_R2_00001 PanJit Semiconductor PJW4N06A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 8A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 42500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJW4P06A-AU_R2_007A1 PJW4P06A-AU_R2_007A1 PanJit Semiconductor PJW4P06A-AU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4A; Idm: -16A; 3.1W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4A
Case: SOT223
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -16A
Application: automotive industry
Gate charge: 10nC
On-state resistance: 0.13Ω
Power dissipation: 3.1W
auf Bestellung 5624 Stücke:
Lieferzeit 14-21 Tag (e)
97+0.88 EUR
146+0.58 EUR
229+0.37 EUR
272+0.31 EUR
500+0.27 EUR
1000+0.26 EUR
Mindestbestellmenge: 97 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJW4P06A_R2_00701 PJW4P06A_R2_00701 PanJit Semiconductor Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4A; Idm: -16A; 3.1W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4A
Case: SOT223
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -16A
Gate charge: 10nC
On-state resistance: 0.13Ω
Power dissipation: 3.1W
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)
55+1.55 EUR
Mindestbestellmenge: 55 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJW5P06A-AU_R2_000A1 PJW5P06A-AU_R2_000A1 PanJit Semiconductor Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5A; Idm: -20A; 1W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5A
Case: SOT223
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -20A
Application: automotive industry
Gate charge: 17nC
On-state resistance: 85mΩ
Power dissipation: 1W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW5P06A_R2_00701 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5A; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5A
Case: SOT223
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW7N06A-AU_R2_007A1 PJW7N06A-AU_R2_007A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.6A; SOT223
Case: SOT223
Mounting: SMD
Polarisation: unipolar
Drain current: 6.6A
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW7N06A_R2_00701 PJW7N06A_R2_00701 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.6A; SOT223
Case: SOT223
Mounting: SMD
Polarisation: unipolar
Drain current: 6.6A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJX138K_R1_00001 PJX138K_R1_00001 PanJit Semiconductor Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; Idm: 1.2A; 223mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Pulsed drain current: 1.2A
Power dissipation: 223mW
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3720 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.31 EUR
477+0.18 EUR
823+0.1 EUR
916+0.093 EUR
964+0.088 EUR
Mindestbestellmenge: 278 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJX8603_R1_00001 PJX8603_R1_00001 PanJit Semiconductor PJX8603.pdf Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 50/-60V; 360/-200mA; 300mW
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 50/-60V
Drain current: 360/-200mA
Power dissipation: 0.3W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 2.5/7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 0.95/1.1nC
auf Bestellung 1647 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.43 EUR
327+0.26 EUR
468+0.18 EUR
582+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 200 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJX8812_R1_00001 PanJit Semiconductor Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; SOT563
Polarisation: unipolar
Kind of channel: enhancement
Mounting: SMD
Case: SOT563
Type of transistor: N-MOSFET x2
Drain current: 0.3A
Gate-source voltage: 10V
Drain-source voltage: 30V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJX8828-AU_R1_000A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; SOT563
Kind of channel: enhancement
Mounting: SMD
Case: SOT563
Type of transistor: N-MOSFET x2
Drain current: 0.3A
Gate-source voltage: 10V
Drain-source voltage: 30V
Polarisation: unipolar
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJX8828_R1_00001 PanJit Semiconductor PJX8828.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; SOT563
Kind of channel: enhancement
Mounting: SMD
Case: SOT563
Type of transistor: N-MOSFET x2
Drain current: 0.3A
Gate-source voltage: 10V
Drain-source voltage: 30V
Polarisation: unipolar
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJX8839_R1_00001 PanJit Semiconductor PJX8839.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Gate-source voltage: 20V
Drain-source voltage: 60V
Drain current: 68A
Polarisation: unipolar
Case: DFN5060-8
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PM810_R2_00601 PanJit Semiconductor PM810.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 170A; M8
Case: M8
Type of bridge rectifier: single-phase
Max. forward voltage: 1.05V
Load current: 8A
Max. forward impulse current: 170A
Max. off-state voltage: 1kV
Electrical mounting: SMT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PMS210_R2_00601 PanJit Semiconductor PMS210.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 70A; M4
Case: M4
Max. forward voltage: 1.05V
Max. off-state voltage: 1kV
Electrical mounting: SMT
Load current: 2A
Type of bridge rectifier: single-phase
Max. forward impulse current: 70A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PMS310_R2_00601 PanJit Semiconductor PMS310.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 3A; Ifsm: 110A; M4
Case: M4
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1.05V
Load current: 3A
Max. forward impulse current: 110A
Max. off-state voltage: 1kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PMS410_R2_00601 PMS410_R2_00601 PanJit Semiconductor PMS410.pdf Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 120A; M4
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Case: M4
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1.05V
Load current: 4A
Max. forward impulse current: 120A
Max. off-state voltage: 1kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PMSM608_R2_00301 PanJit Semiconductor Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 150A; M6
Max. off-state voltage: 0.8kV
Electrical mounting: SMT
Load current: 6A
Case: M6
Type of bridge rectifier: single-phase
Max. forward impulse current: 150A
Max. forward voltage: 1V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PMSM810_R2_00301 PanJit Semiconductor Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 200A; M6
Case: M6
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1V
Load current: 8A
Max. forward impulse current: 200A
Max. off-state voltage: 1kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PS1405-D32_R1_00301 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 5A; bidirectional; DFN2; Ch: 1
Mounting: SMD
Breakdown voltage: 6V
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Semiconductor structure: bidirectional
Leakage current: 0.5µA
Case: DFN2
Capacitance: 0.42pF
Type of diode: TVS
Number of channels: 1
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PS140M-D32_R1_00301 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 25.5V; 10A; bidirectional; DFN2; Ch: 1
Mounting: SMD
Breakdown voltage: 25.5V
Max. forward impulse current: 10A
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Leakage current: 0.5µA
Case: DFN2
Capacitance: 0.5pF
Type of diode: TVS
Number of channels: 1
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PS161M-D62_R1_00301 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; DFN1006-2
Case: DFN1006-2
Mounting: SMD
Type of diode: TVS
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PS2705-D63_R1_00301 PanJit Semiconductor PS2705-D63 Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 5A; bidirectional; Ch: 2
Type of diode: TVS
Breakdown voltage: 6V
Max. forward impulse current: 5A
Semiconductor structure: bidirectional
Mounting: SMD
Max. off-state voltage: 5V
Leakage current: 0.5µA
Number of channels: 2
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PS5915-S26_S1_00301 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 5A; unidirectional; SOT23-6L; Ch: 5
Type of diode: TVS
Breakdown voltage: 5.5V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23-6L
Max. off-state voltage: 5V
Leakage current: 1µA
Number of channels: 5
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PSMB033N10NS2_R2_00201 PanJit Semiconductor PSMB033N10NS2.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 2400 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PSMN015N10NS2_R2_00201 PanJit Semiconductor 20230516171020ta7o3bGUZ1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 398A; Idm: 1592A; 250W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 398A
Pulsed drain current: 1592A
Power dissipation: 250W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMN028N10NS2_R2_00201 PanJit Semiconductor 20230516171020ta7o3bGUZ1.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 240A; Idm: 960A; 167W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 240A
Pulsed drain current: 960A
Power dissipation: 167W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMP033N10NS2_T0_00601 PanJit Semiconductor PSMP033N10NS2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMP055N08NS1_T0_00601 PSMP055N08NS1_T0_00601 PanJit Semiconductor PSMP055N08NS1.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220AB
Case: TO220AB
Mounting: THT
Pulsed drain current: 360A
Power dissipation: 136W
Gate charge: 65.8nC
Polarisation: unipolar
Drain current: 111A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
On-state resistance: 7mΩ
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)
34+2.55 EUR
57+1.5 EUR
63+1.36 EUR
Mindestbestellmenge: 34 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PSMQC040N10NS2_R2_00601 PSMQC040N10NS2_R2_00601 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 122A; Idm: 488A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 122A
Pulsed drain current: 488A
Power dissipation: 125W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PSMQC042N10LS2_R2_00201 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 9000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PSMQC060N06LS1-AU_R2_006A1 PanJit Semiconductor PSMQC060N06LS1-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMQC060N06LS1_R2_00201 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMQC120N06LS1-AU_R2_006A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 39A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 39A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMQC120N06LS1_R2_00201 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 39A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 39A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMQC280N10LS2-AU_R2_002A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 21A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMQE070N08LS2_R2_00601 PanJit Semiconductor PSMQE070N08LS2 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 63.8A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 63.8A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
 Mindestbestellmenge: 30000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PTGH7565S1_T0_00201 PanJit Semiconductor Category: THT IGBT transistors
Description: Transistor: IGBT; Trench FS IGBT; 650V; 80A; 183W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 183W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Trench FS IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PZ1AH12B-AU_R1_000A1 PanJit Semiconductor PZ1AH3V6B-AU_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 12V; SMD; SOD123HE; reel,tape; single diode
Semiconductor structure: single diode
Power dissipation: 1W
Mounting: SMD
Kind of package: reel; tape
Type of diode: Zener
Tolerance: ±5%
Zener voltage: 12V
Application: automotive industry
Case: SOD123HE
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PZ1AH12B_R1_00001 PanJit Semiconductor PZ1AH3V6B_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 12V; SMD; SOD123HE; reel,tape; single diode
Semiconductor structure: single diode
Power dissipation: 1W
Mounting: SMD
Kind of package: reel; tape
Type of diode: Zener
Tolerance: ±5%
Zener voltage: 12V
Case: SOD123HE
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PZ1AH16B-AU_R1_000A1 PanJit Semiconductor PZ1AH3V6B-AU_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 16V; SMD; SOD123HE; reel,tape; single diode
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123HE
Type of diode: Zener
Power dissipation: 1W
Tolerance: ±5%
Zener voltage: 16V
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PZ1AH16B_R1_00001 PanJit Semiconductor PZ1AH3V6B_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 16V; SMD; SOD123HE; reel,tape; single diode
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123HE
Type of diode: Zener
Power dissipation: 1W
Tolerance: ±5%
Zener voltage: 16V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PZ1AH18B-AU_R1_000A1 PanJit Semiconductor PZ1AH3V6B-AU_SER.pdf Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; SMD; SOD123HE; single diode; reel,tape
Tolerance: ±5%
Mounting: SMD
Power dissipation: 1W
Application: automotive industry
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123HE
Zener voltage: 18V
Type of diode: Zener
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJSOT24C-05-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 29.4V; 12A; 0.35kW; unidirectional; SOT23; Ch: 2
Type of diode: TVS
Breakdown voltage: 29.4V
Max. forward impulse current: 12A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Leakage current: 1µA
Number of channels: 2
Capacitance: 0.15nF
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJT138K-AU_R1_000A1
PJT138K-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 360mA; Idm: 1.2A; 236mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.36A
Pulsed drain current: 1.2A
Power dissipation: 0.236W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
239+0.36 EUR
394+0.21 EUR
656+0.13 EUR
903+0.094 EUR
1000+0.088 EUR
Mindestbestellmenge: 239 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJT7002H_R1_00001 PJT7002H.pdf
PJT7002H_R1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30V; 300mA; SOT363
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 0.3A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N/P-MOSFET
Gate-source voltage: 10V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJT7002KDW_R1_00501
PJT7002KDW_R1_00501
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30V; 300mA; SOT363
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 0.3A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N/P-MOSFET
Gate-source voltage: 10V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJT7600_R1_00001 PJT7600.pdf
PJT7600_R1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 1A/-700mA
Gate charge: 1.6/2.2nC
On-state resistance: 400/600mΩ
Power dissipation: 0.35W
Gate-source voltage: ±8V
auf Bestellung 2685 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
139+0.61 EUR
226+0.38 EUR
358+0.24 EUR
500+0.18 EUR
1000+0.15 EUR
Mindestbestellmenge: 139 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJT7603_R1_00001 PJT7603.pdf
PJT7603_R1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 50/-60V
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Kind of transistor: complementary pair
Kind of channel: enhancement
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 50/-60V
Drain current: -250/400mA
Gate charge: 0.95/1.1nC
On-state resistance: 2.5/6Ω
Power dissipation: 0.35W
Gate-source voltage: ±20V
auf Bestellung 2750 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
239+0.36 EUR
350+0.24 EUR
635+0.13 EUR
828+0.1 EUR
1000+0.095 EUR
Mindestbestellmenge: 239 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJT7800_R1_00001 PJT7800.pdf
PJT7800_R1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT363
Mounting: SMD
Pulsed drain current: 4A
Power dissipation: 0.35W
Gate charge: 1.6nC
Polarisation: unipolar
Drain current: 1A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET x2
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: SOT363
On-state resistance: 0.4Ω
auf Bestellung 5968 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
455+0.19 EUR
596+0.14 EUR
650+0.13 EUR
715+0.12 EUR
1000+0.11 EUR
3000+0.11 EUR
Mindestbestellmenge: 455 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJT7801_R1_00001 PJT7801.pdf
PJT7801_R1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -700mA; Idm: -2.8A; 350mW
Mounting: SMD
Case: SOT363
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Pulsed drain current: -2.8A
Drain current: -0.7A
Gate charge: 2.2nC
On-state resistance: 0.6Ω
Power dissipation: 0.35W
Gate-source voltage: ±8V
auf Bestellung 2845 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
125+0.68 EUR
260+0.33 EUR
575+0.14 EUR
642+0.13 EUR
695+0.12 EUR
758+0.11 EUR
1000+0.11 EUR
Mindestbestellmenge: 125 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJT7808_R1_00001 PJT7808.pdf
PJT7808_R1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain current: -250mA
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET x2
Gate-source voltage: 20V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJT7812_R1_00001 PJT7812.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -250mA
Case: SOT363
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJT7838_R1_00001 PJT7838.pdf
PJT7838_R1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 400mA; Idm: 1.2A; 350mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.4A
Pulsed drain current: 1.2A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 0.95nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 7647 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
417+0.2 EUR
527+0.17 EUR
569+0.15 EUR
596+0.14 EUR
1000+0.13 EUR
3000+0.12 EUR
Mindestbestellmenge: 417 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJUSB05-4_R1_00001
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6.37V; 0.15kW; unidirectional; SOT23-6L; Ch: 5
Type of diode: TVS
Breakdown voltage: 6.37V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23-6L
Max. off-state voltage: 5V
Leakage current: 1µA
Number of channels: 5
Capacitance: 8.5pF
Peak pulse power dissipation: 0.15kW
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJUSB208_R1_00001
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 85V; unidirectional; SOT23-6L; Ch: 4
Type of diode: TVS
Breakdown voltage: 85V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23-6L
Max. off-state voltage: 70V
Leakage current: 1µA
Number of channels: 4
Capacitance: 1pF
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJUSB208_S1_00001
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 85V; unidirectional; SOT23-6L; Ch: 4
Type of diode: TVS
Breakdown voltage: 85V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23-6L
Max. off-state voltage: 70V
Leakage current: 1µA
Number of channels: 4
Capacitance: 1pF
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJW3P06A-AU_R2_007A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3A
Case: SOT223
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW3P06A_R2_00701
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3A
Case: SOT223
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW4N06A-AU_R2_000A1 PJW4N06A-AU.pdf
PJW4N06A-AU_R2_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; Idm: 8A; 2.6W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Pulsed drain current: 8A
Power dissipation: 2.6W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 42500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJW4N06A_R2_00001 PJW4N06A.pdf
PJW4N06A_R2_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 8A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 42500 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJW4P06A-AU_R2_007A1 PJW4P06A-AU.pdf
PJW4P06A-AU_R2_007A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4A; Idm: -16A; 3.1W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4A
Case: SOT223
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -16A
Application: automotive industry
Gate charge: 10nC
On-state resistance: 0.13Ω
Power dissipation: 3.1W
auf Bestellung 5624 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
97+0.88 EUR
146+0.58 EUR
229+0.37 EUR
272+0.31 EUR
500+0.27 EUR
1000+0.26 EUR
Mindestbestellmenge: 97 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJW4P06A_R2_00701
PJW4P06A_R2_00701
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4A; Idm: -16A; 3.1W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4A
Case: SOT223
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -16A
Gate charge: 10nC
On-state resistance: 0.13Ω
Power dissipation: 3.1W
auf Bestellung 55 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
55+1.55 EUR
Mindestbestellmenge: 55 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJW5P06A-AU_R2_000A1
PJW5P06A-AU_R2_000A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5A; Idm: -20A; 1W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5A
Case: SOT223
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -20A
Application: automotive industry
Gate charge: 17nC
On-state resistance: 85mΩ
Power dissipation: 1W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW5P06A_R2_00701
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5A; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5A
Case: SOT223
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW7N06A-AU_R2_007A1
PJW7N06A-AU_R2_007A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.6A; SOT223
Case: SOT223
Mounting: SMD
Polarisation: unipolar
Drain current: 6.6A
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJW7N06A_R2_00701
PJW7N06A_R2_00701
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.6A; SOT223
Case: SOT223
Mounting: SMD
Polarisation: unipolar
Drain current: 6.6A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJX138K_R1_00001
PJX138K_R1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; Idm: 1.2A; 223mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Pulsed drain current: 1.2A
Power dissipation: 223mW
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3720 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
278+0.31 EUR
477+0.18 EUR
823+0.1 EUR
916+0.093 EUR
964+0.088 EUR
Mindestbestellmenge: 278 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJX8603_R1_00001 PJX8603.pdf
PJX8603_R1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 50/-60V; 360/-200mA; 300mW
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 50/-60V
Drain current: 360/-200mA
Power dissipation: 0.3W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 2.5/7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 0.95/1.1nC
auf Bestellung 1647 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
200+0.43 EUR
327+0.26 EUR
468+0.18 EUR
582+0.14 EUR
1000+0.13 EUR
Mindestbestellmenge: 200 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJX8812_R1_00001
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; SOT563
Polarisation: unipolar
Kind of channel: enhancement
Mounting: SMD
Case: SOT563
Type of transistor: N-MOSFET x2
Drain current: 0.3A
Gate-source voltage: 10V
Drain-source voltage: 30V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJX8828-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; SOT563
Kind of channel: enhancement
Mounting: SMD
Case: SOT563
Type of transistor: N-MOSFET x2
Drain current: 0.3A
Gate-source voltage: 10V
Drain-source voltage: 30V
Polarisation: unipolar
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJX8828_R1_00001 PJX8828.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; SOT563
Kind of channel: enhancement
Mounting: SMD
Case: SOT563
Type of transistor: N-MOSFET x2
Drain current: 0.3A
Gate-source voltage: 10V
Drain-source voltage: 30V
Polarisation: unipolar
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJX8839_R1_00001 PJX8839.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Gate-source voltage: 20V
Drain-source voltage: 60V
Drain current: 68A
Polarisation: unipolar
Case: DFN5060-8
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PM810_R2_00601 PM810.pdf
Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 170A; M8
Case: M8
Type of bridge rectifier: single-phase
Max. forward voltage: 1.05V
Load current: 8A
Max. forward impulse current: 170A
Max. off-state voltage: 1kV
Electrical mounting: SMT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PMS210_R2_00601 PMS210.pdf
Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 70A; M4
Case: M4
Max. forward voltage: 1.05V
Max. off-state voltage: 1kV
Electrical mounting: SMT
Load current: 2A
Type of bridge rectifier: single-phase
Max. forward impulse current: 70A
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PMS310_R2_00601 PMS310.pdf
Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 3A; Ifsm: 110A; M4
Case: M4
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1.05V
Load current: 3A
Max. forward impulse current: 110A
Max. off-state voltage: 1kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PMS410_R2_00601 PMS410.pdf
PMS410_R2_00601
Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 120A; M4
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Case: M4
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1.05V
Load current: 4A
Max. forward impulse current: 120A
Max. off-state voltage: 1kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PMSM608_R2_00301
Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 150A; M6
Max. off-state voltage: 0.8kV
Electrical mounting: SMT
Load current: 6A
Case: M6
Type of bridge rectifier: single-phase
Max. forward impulse current: 150A
Max. forward voltage: 1V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PMSM810_R2_00301
Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 200A; M6
Case: M6
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1V
Load current: 8A
Max. forward impulse current: 200A
Max. off-state voltage: 1kV
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PS1405-D32_R1_00301
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 5A; bidirectional; DFN2; Ch: 1
Mounting: SMD
Breakdown voltage: 6V
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Semiconductor structure: bidirectional
Leakage current: 0.5µA
Case: DFN2
Capacitance: 0.42pF
Type of diode: TVS
Number of channels: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PS140M-D32_R1_00301
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 25.5V; 10A; bidirectional; DFN2; Ch: 1
Mounting: SMD
Breakdown voltage: 25.5V
Max. forward impulse current: 10A
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Leakage current: 0.5µA
Case: DFN2
Capacitance: 0.5pF
Type of diode: TVS
Number of channels: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PS161M-D62_R1_00301
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1006-2
Case: DFN1006-2
Mounting: SMD
Type of diode: TVS
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PS2705-D63_R1_00301 PS2705-D63
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 5A; bidirectional; Ch: 2
Type of diode: TVS
Breakdown voltage: 6V
Max. forward impulse current: 5A
Semiconductor structure: bidirectional
Mounting: SMD
Max. off-state voltage: 5V
Leakage current: 0.5µA
Number of channels: 2
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PS5915-S26_S1_00301
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 5A; unidirectional; SOT23-6L; Ch: 5
Type of diode: TVS
Breakdown voltage: 5.5V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23-6L
Max. off-state voltage: 5V
Leakage current: 1µA
Number of channels: 5
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PSMB033N10NS2_R2_00201 PSMB033N10NS2.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2400 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PSMN015N10NS2_R2_00201 20230516171020ta7o3bGUZ1.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 398A; Idm: 1592A; 250W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 398A
Pulsed drain current: 1592A
Power dissipation: 250W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMN028N10NS2_R2_00201 20230516171020ta7o3bGUZ1.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 240A; Idm: 960A; 167W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 240A
Pulsed drain current: 960A
Power dissipation: 167W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMP033N10NS2_T0_00601 PSMP033N10NS2
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMP055N08NS1_T0_00601 PSMP055N08NS1.pdf
PSMP055N08NS1_T0_00601
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220AB
Case: TO220AB
Mounting: THT
Pulsed drain current: 360A
Power dissipation: 136W
Gate charge: 65.8nC
Polarisation: unipolar
Drain current: 111A
Kind of channel: enhancement
Drain-source voltage: 80V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: tube
On-state resistance: 7mΩ
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
34+2.55 EUR
57+1.5 EUR
63+1.36 EUR
Mindestbestellmenge: 34 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PSMQC040N10NS2_R2_00601
PSMQC040N10NS2_R2_00601
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 122A; Idm: 488A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 122A
Pulsed drain current: 488A
Power dissipation: 125W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PSMQC042N10LS2_R2_00201
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 9000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PSMQC060N06LS1-AU_R2_006A1 PSMQC060N06LS1-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMQC060N06LS1_R2_00201
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMQC120N06LS1-AU_R2_006A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 39A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 39A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMQC120N06LS1_R2_00201
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 39A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 39A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMQC280N10LS2-AU_R2_002A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 21A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 21A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PSMQE070N08LS2_R2_00601 PSMQE070N08LS2
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 63.8A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 63.8A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 30000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PTGH7565S1_T0_00201
Hersteller: PanJit Semiconductor
Category: THT IGBT transistors
Description: Transistor: IGBT; Trench FS IGBT; 650V; 80A; 183W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 80A
Power dissipation: 183W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 225A
Mounting: THT
Gate charge: 108nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode
Technology: Trench FS IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PZ1AH12B-AU_R1_000A1 PZ1AH3V6B-AU_SER.pdf
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 12V; SMD; SOD123HE; reel,tape; single diode
Semiconductor structure: single diode
Power dissipation: 1W
Mounting: SMD
Kind of package: reel; tape
Type of diode: Zener
Tolerance: ±5%
Zener voltage: 12V
Application: automotive industry
Case: SOD123HE
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PZ1AH12B_R1_00001 PZ1AH3V6B_SER.pdf
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 12V; SMD; SOD123HE; reel,tape; single diode
Semiconductor structure: single diode
Power dissipation: 1W
Mounting: SMD
Kind of package: reel; tape
Type of diode: Zener
Tolerance: ±5%
Zener voltage: 12V
Case: SOD123HE
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PZ1AH16B-AU_R1_000A1 PZ1AH3V6B-AU_SER.pdf
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 16V; SMD; SOD123HE; reel,tape; single diode
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123HE
Type of diode: Zener
Power dissipation: 1W
Tolerance: ±5%
Zener voltage: 16V
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PZ1AH16B_R1_00001 PZ1AH3V6B_SER.pdf
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 16V; SMD; SOD123HE; reel,tape; single diode
Semiconductor structure: single diode
Mounting: SMD
Case: SOD123HE
Type of diode: Zener
Power dissipation: 1W
Tolerance: ±5%
Zener voltage: 16V
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PZ1AH18B-AU_R1_000A1 PZ1AH3V6B-AU_SER.pdf
Hersteller: PanJit Semiconductor
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 18V; SMD; SOD123HE; single diode; reel,tape
Tolerance: ±5%
Mounting: SMD
Power dissipation: 1W
Application: automotive industry
Kind of package: reel; tape
Semiconductor structure: single diode
Case: SOD123HE
Zener voltage: 18V
Type of diode: Zener
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 2 4 6 8 10 12 14 16 18 19 20 21 22 23 24 25 26 27  [ Nächste Seite >> ]