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PJC7476_R1_00001 PJC7476_R1_00001 PanJit Semiconductor PJC7476.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300mA; Idm: 0.8A; 350mW
Mounting: SMD
Pulsed drain current: 0.8A
Power dissipation: 0.35W
Gate charge: 1.8nC
Polarisation: unipolar
Drain current: 0.3A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT323
On-state resistance: 9Ω
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PJD100N06SA-AU_L2_006A1 PanJit Semiconductor PJD100N06SA-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50.4A; DFN3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50.4A
Case: DFN3333-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJD10P10A_L2_00601 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; TO252AA
Case: TO252AA
Mounting: SMD
Polarisation: unipolar
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
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PJD11N06A-AU_L2_000A1 PJD11N06A-AU_L2_000A1 PanJit Semiconductor PJD11N06A-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; TO252AA
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Polarisation: unipolar
Drain current: 11A
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PJD11N06A_L2_00601 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJD13N10A_L2_00601 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJD15P06A-AU_L2_000A1 PJD15P06A-AU_L2_000A1 PanJit Semiconductor PJD15P06A-AU Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15A; Idm: -60A; 25W; TO252AA
Case: TO252AA
Kind of package: reel; tape
Pulsed drain current: -60A
Power dissipation: 25W
Gate charge: 17nC
Polarisation: unipolar
Drain current: -15A
Kind of channel: enhancement
Drain-source voltage: -60V
Application: automotive industry
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
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PJD15P06A_L2_00601 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; TO252AA
Case: TO252AA
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 15A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Mounting: SMD
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PJD16N06A-AU_L2_000A1 PanJit Semiconductor PJD16N06A-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJD16N06A_L2_00601 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJD16P06A_L2_00001 PJD16P06A_L2_00001 PanJit Semiconductor PJD16P06A.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -16A; Idm: -64A; 2W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -16A
Power dissipation: 2W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: -64A
Gate charge: 22nC
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PJD18N20_L2_00001 PJD18N20_L2_00001 PanJit Semiconductor PJx18N20.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 83W; TO252AA
Case: TO252AA
Mounting: SMD
On-state resistance: 0.16Ω
Drain current: 11A
Gate-source voltage: ±20V
Power dissipation: 83W
Pulsed drain current: 72A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 24nC
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PJD25N06A-AU_L2_000A1 PanJit Semiconductor PJD25N06A-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJD25N06A_L2_00001 PJD25N06A_L2_00001 PanJit Semiconductor PJD25N06A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 40W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
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PJD30N04S-AU_L2_002A1 PanJit Semiconductor PJD30N04S-AU Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 43A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 43A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJD35N06A_L2_00601 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJD40N06A-AU_L2_000A1 PanJit Semiconductor PJD40N06A-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Case: TO252AA
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: 20V
Kind of package: reel; tape
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PJD40N06A_L2_00601 PJD40N06A_L2_00601 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
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PJD40P03E-AU_L2_006A1 PanJit Semiconductor PJD40P03E-AU Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -33A; Idm: -94A; 17W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -33A
Pulsed drain current: -94A
Power dissipation: 17W
Case: TO252AA
Gate-source voltage: ±25V
On-state resistance: 18.8mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel
Kind of channel: enhancement
Application: automotive industry
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PJD45N06A_L2_00001 PJD45N06A_L2_00001 PanJit Semiconductor PJx45N06A.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; Idm: 180A; 63W; TO252AA
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 39nC
On-state resistance: 15mΩ
Drain current: 45A
Gate-source voltage: ±20V
Power dissipation: 63W
Drain-source voltage: 60V
Pulsed drain current: 180A
Kind of channel: enhancement
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PJD45P03E-AU_L2_006A1 PanJit Semiconductor PJD45P03E-AU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -42A; Idm: -128A; 21W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -42A
Power dissipation: 21W
Case: TO252AA
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 32nC
Kind of channel: enhancement
Pulsed drain current: -128A
Application: automotive industry
Kind of package: reel
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PJD50N04-AU_L2_000A1 PanJit Semiconductor PJD50N04-AU Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJD50N04V-AU_L2_002A1 PanJit Semiconductor PJD50N04V-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJD60N04S-AU_L2_002A1 PanJit Semiconductor PJD60N04S-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 140A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJD60N04V-AU_L2_002A1 PanJit Semiconductor PJD60N04V-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 154A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 154A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJD60N06SA-AU_L2_006A1 PanJit Semiconductor PJD60N06SA-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 66A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 66A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJD70N10SA-AU_L2_006A1 PanJit Semiconductor PJD70N10SA-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 88A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 88A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJD70P03E-AU_L2_006A1 PanJit Semiconductor PJD70P03E-AU Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -77A; Idm: -225A; 40W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -77A
Pulsed drain current: -225A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±25V
On-state resistance: 8.4mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel
Kind of channel: enhancement
Application: automotive industry
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PJD80N03_L2_00001 PanJit Semiconductor PJx80N03.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJD80N06SA-AU_L2_006A1 PanJit Semiconductor PJD80N06SA-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 94A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 94A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJD90P03E-AU_L2_006A1 PanJit Semiconductor PJD90P03E-AU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -88A; Idm: -219A; 40W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -88A
Pulsed drain current: -219A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±25V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel
Kind of channel: enhancement
Application: automotive industry
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PJD9P06A-AU_L2_000A1 PanJit Semiconductor PJD9P06A-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJE138K_R1_00001 PJE138K_R1_00001 PanJit Semiconductor PJE138K.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 350mA; Idm: 1.2A; 223mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Pulsed drain current: 1.2A
Power dissipation: 223mW
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
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PJE28VM2FN2_R1_00501 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 29V; 3A; 0.165kW; unidirectional; DFN1006-2; Ch: 1
Type of diode: TVS
Case: DFN1006-2
Mounting: SMD
Max. off-state voltage: 28V
Semiconductor structure: unidirectional
Capacitance: 25pF
Leakage current: 0.5µA
Max. forward impulse current: 3A
Number of channels: 1
Breakdown voltage: 29V
Peak pulse power dissipation: 0.165kW
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PJE28VM2TS_R1_00001 PJE28VM2TS_R1_00001 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 29V; 3A; 0.165kW; unidirectional; SOD523; Ch: 1
Type of diode: TVS
Case: SOD523
Mounting: SMD
Max. off-state voltage: 28V
Semiconductor structure: unidirectional
Capacitance: 25pF
Leakage current: 0.5µA
Max. forward impulse current: 3A
Number of channels: 1
Breakdown voltage: 29V
Peak pulse power dissipation: 0.165kW
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PJE5UFN10A-AU_R1_000A1 PanJit Semiconductor PJE5UFN10A-AU Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 2.5A; unidirectional; DFN2510; Ch: 4
Application: automotive industry
Case: DFN2510
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.6pF
Leakage current: 1µA
Max. forward impulse current: 2.5A
Number of channels: 4
Max. off-state voltage: 5V
Breakdown voltage: 6V
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PJE5UFN10A_R1_00001 PanJit Semiconductor PJE5UFN10A.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 2.5A; unidirectional; DFN2510-10; Ch: 4
Case: DFN2510-10
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.8pF
Leakage current: 1µA
Max. forward impulse current: 2.5A
Number of channels: 4
Max. off-state voltage: 5V
Breakdown voltage: 6V
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PJE5V0U8TB-AU_R1_000A1 PJE5V0U8TB-AU_R1_000A1 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS array; 5.8÷10.2V; unidirectional; ESD; SOT523
Type of diode: TVS array
Breakdown voltage: 5.8...10.2V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT523
Max. off-state voltage: 5V
Leakage current: 1µA
Capacitance: 0.8pF
Application: automotive industry
Kind of package: reel; tape
Version: ESD
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417+0.2 EUR
468+0.18 EUR
550+0.15 EUR
589+0.14 EUR
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8000+0.12 EUR
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PJE8400_R1_00001 PanJit Semiconductor PJE8400.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.1A; SOT523
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.1A
Gate-source voltage: 12V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Produkt ist nicht verfügbar
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PJE8401_R1_00001 PanJit Semiconductor PJE8401.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 900mA; SOT523
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.9A
Gate-source voltage: 12V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Produkt ist nicht verfügbar
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PJE8402_R1_00001 PJE8402_R1_00001 PanJit Semiconductor PJE8402.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 2.8A; 300mW; SOT523
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 2.8A
Drain current: 0.7A
Gate charge: 1.6nC
Power dissipation: 0.3W
On-state resistance: 0.4Ω
Gate-source voltage: ±8V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Produkt ist nicht verfügbar
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PJE8403_R1_00001 PJE8403_R1_00001 PanJit Semiconductor PJE8403.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -600mA; Idm: -2.4A; 300mW
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: -2.4A
Power dissipation: 0.3W
Gate charge: 2.2nC
Polarisation: unipolar
Drain current: -600mA
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 0.6Ω
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379+0.23 EUR
486+0.18 EUR
550+0.15 EUR
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PJE8404_R1_00001 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 600mA; SOT523
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Gate-source voltage: 8V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Produkt ist nicht verfügbar
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PJE8405_R1_00001 PanJit Semiconductor PJE8405.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 500mA; SOT523
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 0.5A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: 8V
Produkt ist nicht verfügbar
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PJE8406TB89_R1_00701 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 800mA; SC89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.8A
Case: SC89
Gate-source voltage: 12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJE8407_R1_00001 PanJit Semiconductor PJE8407.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 500mA; SOT523
Mounting: SMD
Polarisation: unipolar
Drain current: 0.5A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: 10V
Kind of package: reel; tape
Case: SOT523
Produkt ist nicht verfügbar
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PJE8408_R1_00001 PJE8408_R1_00001 PanJit Semiconductor PJE8408.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 500mA; Idm: 1A; 300mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.5A
Pulsed drain current: 1A
Power dissipation: 0.3W
Case: SOT523
Gate-source voltage: ±10V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhancement
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PJE8428_R1_00001 PanJit Semiconductor PJE8428 Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; SOT523
Mounting: SMD
Polarisation: unipolar
Drain current: 0.3A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: 10V
Kind of package: reel; tape
Case: SOT523
Produkt ist nicht verfügbar
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PJE8472B_R1_00001 PanJit Semiconductor PJE8472B.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Case: SOT523
Gate-source voltage: 30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJEC12VM1TA-AU_R1_000A1 PJEC12VM1TA-AU_R1_000A1 PanJit Semiconductor PJEC12VM1TA-AU_SERIES.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 16.5V; 3A; bidirectional; SOT23; Ch: 2
Mounting: SMD
Breakdown voltage: 16.5V
Max. forward impulse current: 3A
Application: automotive industry
Max. off-state voltage: 12V
Semiconductor structure: bidirectional
Leakage current: 50nA
Case: SOT23
Capacitance: 10pF
Type of diode: TVS
Number of channels: 2
Produkt ist nicht verfügbar
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PJEC12VM1TA_R1_00001 PJEC12VM1TA_R1_00001 PanJit Semiconductor PJEC12VM1TA Category: Protection diodes - arrays
Description: Diode: TVS; 16.5V; 3A; bidirectional; SOT23; Ch: 2
Mounting: SMD
Breakdown voltage: 16.5V
Max. forward impulse current: 3A
Max. off-state voltage: 12V
Semiconductor structure: bidirectional
Leakage current: 50nA
Case: SOT23
Capacitance: 10pF
Type of diode: TVS
Number of channels: 2
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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PJEC2415VM1WS-AU_R1_000A1 PJEC2415VM1WS-AU_R1_000A1 PanJit Semiconductor PJEC2415VM1WS-AU Category: Protection diodes - arrays
Description: Diode: TVS; 17.1÷30.3V; 160W; asymmetric,bidirectional; ESD; Ch: 1
Capacitance: 17pF
Mounting: SMD
Kind of package: reel; tape
Peak pulse power dissipation: 0.16kW
Version: ESD
Application: automotive industry
Max. off-state voltage: 15...24V
Semiconductor structure: asymmetric; bidirectional
Leakage current: 50nA
Case: SOD323
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 17.1...30.3V
Produkt ist nicht verfügbar
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PJEC2415VM1WS_R1_00001 PJEC2415VM1WS_R1_00001 PanJit Semiconductor PJEC2415VM1WS.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 30.3V; 3A; 0.16kW; bidirectional; SOD323; Ch: 1
Mounting: SMD
Peak pulse power dissipation: 0.16kW
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Leakage current: 50nA
Case: SOD323
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 30.3V
Max. forward impulse current: 3A
Produkt ist nicht verfügbar
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PJEC24MTA-AU_R1_000A1 PJEC24MTA-AU_R1_000A1 PanJit Semiconductor PJEC24MTA-AU.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 30.3V; 4A; bidirectional; SOT23; Ch: 2
Capacitance: 11pF
Mounting: SMD
Application: automotive industry
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Leakage current: 50nA
Case: SOT23
Type of diode: TVS
Number of channels: 2
Breakdown voltage: 30.3V
Max. forward impulse current: 4A
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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PJEC24MTA_R1_00001 PJEC24MTA_R1_00001 PanJit Semiconductor PJEC24MTA.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 30.3V; 4A; bidirectional; SOT23; Ch: 2
Capacitance: 11pF
Mounting: SMD
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Leakage current: 50nA
Case: SOT23
Type of diode: TVS
Number of channels: 2
Breakdown voltage: 30.3V
Max. forward impulse current: 4A
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
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PJF18N20_T0_00001 PanJit Semiconductor PJx18N20.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; ITO220AB
Case: ITO220AB
Mounting: SMD
Drain current: 18A
Gate-source voltage: 20V
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Produkt ist nicht verfügbar
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PJGBLC03C-AU_R1_000A1 PJGBLC03C-AU_R1_000A1 PanJit Semiconductor PJGBLC24C-AU Category: Protection diodes - arrays
Description: Diode: TVS array; 4.75÷5.25V; 1A; 350W; bidirectional; ESD; SOD323
Type of diode: TVS array
Breakdown voltage: 4.75...5.25V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 3.3V
Leakage current: 20µA
Number of channels: 1
Capacitance: 3pF
Kind of package: reel; tape
Version: ESD
Application: automotive industry
Produkt ist nicht verfügbar
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PJGBLC03C_R1_00001 PJGBLC03C_R1_00001 PanJit Semiconductor PJGBLC03_C24C_SERIES.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 4.75÷5.25V; 1A; 350W; bidirectional; SOD323; Ch: 1
Type of diode: TVS array
Breakdown voltage: 4.75...5.25V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 3.3V
Leakage current: 20µA
Number of channels: 1
Capacitance: 3pF
Kind of package: reel; tape
Produkt ist nicht verfügbar
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PJGBLC05C_R1_00001 PJGBLC05C_R1_00001 PanJit Semiconductor PJGBLC03_C24C_SERIES.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 7.03÷7.77V; 1A; 350W; bidirectional; SOD323; Ch: 1
Mounting: SMD
Breakdown voltage: 7.03...7.77V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 5V
Kind of package: reel; tape
Semiconductor structure: bidirectional
Leakage current: 5µA
Case: SOD323
Capacitance: 3pF
Type of diode: TVS array
Number of channels: 1
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309+0.27 EUR
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PJGL12_R1_00001 PJGL12_R1_00001 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 13.3V; 5A; unidirectional; SOT23; Ch: 1
Type of diode: TVS
Case: SOT23
Mounting: SMD
Max. off-state voltage: 12V
Semiconductor structure: unidirectional
Capacitance: 1.2pF
Max. forward impulse current: 5A
Breakdown voltage: 13.3V
Leakage current: 1µA
Number of channels: 1
Produkt ist nicht verfügbar
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PJC7476_R1_00001 PJC7476.pdf
PJC7476_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 300mA; Idm: 0.8A; 350mW
Mounting: SMD
Pulsed drain current: 0.8A
Power dissipation: 0.35W
Gate charge: 1.8nC
Polarisation: unipolar
Drain current: 0.3A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT323
On-state resistance: 9Ω
Produkt ist nicht verfügbar
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PJD100N06SA-AU_L2_006A1 PJD100N06SA-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 50.4A; DFN3333-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 50.4A
Case: DFN3333-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJD10P10A_L2_00601
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; TO252AA
Case: TO252AA
Mounting: SMD
Polarisation: unipolar
Drain current: 10A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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PJD11N06A-AU_L2_000A1 PJD11N06A-AU.pdf
PJD11N06A-AU_L2_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; TO252AA
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Polarisation: unipolar
Drain current: 11A
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112+0.76 EUR
164+0.52 EUR
182+0.46 EUR
500+0.42 EUR
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PJD11N06A_L2_00601
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 11A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 11A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJD13N10A_L2_00601
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 13A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 13A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJD15P06A-AU_L2_000A1 PJD15P06A-AU
PJD15P06A-AU_L2_000A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -15A; Idm: -60A; 25W; TO252AA
Case: TO252AA
Kind of package: reel; tape
Pulsed drain current: -60A
Power dissipation: 25W
Gate charge: 17nC
Polarisation: unipolar
Drain current: -15A
Kind of channel: enhancement
Drain-source voltage: -60V
Application: automotive industry
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
On-state resistance: 85mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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PJD15P06A_L2_00601
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; TO252AA
Case: TO252AA
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 15A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Mounting: SMD
Produkt ist nicht verfügbar
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PJD16N06A-AU_L2_000A1 PJD16N06A-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJD16N06A_L2_00601
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 15A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJD16P06A_L2_00001 PJD16P06A.pdf
PJD16P06A_L2_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -16A; Idm: -64A; 2W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -16A
Power dissipation: 2W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 65mΩ
Mounting: SMD
Kind of channel: enhancement
Pulsed drain current: -64A
Gate charge: 22nC
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135+0.63 EUR
198+0.43 EUR
250+0.39 EUR
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PJD18N20_L2_00001 PJx18N20.pdf
PJD18N20_L2_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 11A; Idm: 72A; 83W; TO252AA
Case: TO252AA
Mounting: SMD
On-state resistance: 0.16Ω
Drain current: 11A
Gate-source voltage: ±20V
Power dissipation: 83W
Pulsed drain current: 72A
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate charge: 24nC
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PJD25N06A-AU_L2_000A1 PJD25N06A-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJD25N06A_L2_00001 PJD25N06A.pdf
PJD25N06A_L2_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 25A; Idm: 100A; 40W; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 25A
Pulsed drain current: 100A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 20nC
Kind of package: reel; tape
Kind of channel: enhancement
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107+0.8 EUR
157+0.55 EUR
215+0.39 EUR
500+0.33 EUR
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PJD30N04S-AU_L2_002A1 PJD30N04S-AU
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 43A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 43A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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PJD35N06A_L2_00601
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 35A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 35A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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PJD40N06A-AU_L2_000A1 PJD40N06A-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Case: TO252AA
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Gate-source voltage: 20V
Kind of package: reel; tape
Produkt ist nicht verfügbar
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PJD40N06A_L2_00601
PJD40N06A_L2_00601
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 40A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 40A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
auf Bestellung 8914 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
93+0.92 EUR
138+0.62 EUR
154+0.56 EUR
500+0.49 EUR
1000+0.44 EUR
3000+0.43 EUR
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PJD40P03E-AU_L2_006A1 PJD40P03E-AU
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -33A; Idm: -94A; 17W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -33A
Pulsed drain current: -94A
Power dissipation: 17W
Case: TO252AA
Gate-source voltage: ±25V
On-state resistance: 18.8mΩ
Mounting: SMD
Gate charge: 22nC
Kind of package: reel
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJD45N06A_L2_00001 PJx45N06A.pdf
PJD45N06A_L2_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 45A; Idm: 180A; 63W; TO252AA
Case: TO252AA
Mounting: SMD
Kind of package: reel; tape
Type of transistor: N-MOSFET
Polarisation: unipolar
Gate charge: 39nC
On-state resistance: 15mΩ
Drain current: 45A
Gate-source voltage: ±20V
Power dissipation: 63W
Drain-source voltage: 60V
Pulsed drain current: 180A
Kind of channel: enhancement
auf Bestellung 154 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
72+1.19 EUR
103+0.82 EUR
150+0.57 EUR
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PJD45P03E-AU_L2_006A1 PJD45P03E-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -42A; Idm: -128A; 21W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -42A
Power dissipation: 21W
Case: TO252AA
Gate-source voltage: ±25V
On-state resistance: 15mΩ
Mounting: SMD
Gate charge: 32nC
Kind of channel: enhancement
Pulsed drain current: -128A
Application: automotive industry
Kind of package: reel
Produkt ist nicht verfügbar
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PJD50N04-AU_L2_000A1 PJD50N04-AU
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 50A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJD50N04V-AU_L2_002A1 PJD50N04V-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 80A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 80A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJD60N04S-AU_L2_002A1 PJD60N04S-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 140A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 140A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJD60N04V-AU_L2_002A1 PJD60N04V-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 154A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 40V
Drain current: 154A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJD60N06SA-AU_L2_006A1 PJD60N06SA-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 66A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 66A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJD70N10SA-AU_L2_006A1 PJD70N10SA-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 88A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 88A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJD70P03E-AU_L2_006A1 PJD70P03E-AU
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -77A; Idm: -225A; 40W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -77A
Pulsed drain current: -225A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±25V
On-state resistance: 8.4mΩ
Mounting: SMD
Gate charge: 54nC
Kind of package: reel
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJD80N03_L2_00001 PJx80N03.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 80A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJD80N06SA-AU_L2_006A1 PJD80N06SA-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 94A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 94A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJD90P03E-AU_L2_006A1 PJD90P03E-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -88A; Idm: -219A; 40W; TO252AA
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -88A
Pulsed drain current: -219A
Power dissipation: 40W
Case: TO252AA
Gate-source voltage: ±25V
On-state resistance: 6.4mΩ
Mounting: SMD
Gate charge: 68nC
Kind of package: reel
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJD9P06A-AU_L2_000A1 PJD9P06A-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 7A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 7A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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PJE138K_R1_00001 PJE138K.pdf
PJE138K_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 350mA; Idm: 1.2A; 223mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Pulsed drain current: 1.2A
Power dissipation: 223mW
Case: SOT523
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 514 Stücke:
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358+0.24 EUR
514+0.17 EUR
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PJE28VM2FN2_R1_00501
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 29V; 3A; 0.165kW; unidirectional; DFN1006-2; Ch: 1
Type of diode: TVS
Case: DFN1006-2
Mounting: SMD
Max. off-state voltage: 28V
Semiconductor structure: unidirectional
Capacitance: 25pF
Leakage current: 0.5µA
Max. forward impulse current: 3A
Number of channels: 1
Breakdown voltage: 29V
Peak pulse power dissipation: 0.165kW
Produkt ist nicht verfügbar
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PJE28VM2TS_R1_00001
PJE28VM2TS_R1_00001
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 29V; 3A; 0.165kW; unidirectional; SOD523; Ch: 1
Type of diode: TVS
Case: SOD523
Mounting: SMD
Max. off-state voltage: 28V
Semiconductor structure: unidirectional
Capacitance: 25pF
Leakage current: 0.5µA
Max. forward impulse current: 3A
Number of channels: 1
Breakdown voltage: 29V
Peak pulse power dissipation: 0.165kW
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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PJE5UFN10A-AU_R1_000A1 PJE5UFN10A-AU
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 2.5A; unidirectional; DFN2510; Ch: 4
Application: automotive industry
Case: DFN2510
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.6pF
Leakage current: 1µA
Max. forward impulse current: 2.5A
Number of channels: 4
Max. off-state voltage: 5V
Breakdown voltage: 6V
Produkt ist nicht verfügbar
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PJE5UFN10A_R1_00001 PJE5UFN10A.pdf
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 2.5A; unidirectional; DFN2510-10; Ch: 4
Case: DFN2510-10
Mounting: SMD
Type of diode: TVS
Semiconductor structure: unidirectional
Capacitance: 0.8pF
Leakage current: 1µA
Max. forward impulse current: 2.5A
Number of channels: 4
Max. off-state voltage: 5V
Breakdown voltage: 6V
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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PJE5V0U8TB-AU_R1_000A1
PJE5V0U8TB-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 5.8÷10.2V; unidirectional; ESD; SOT523
Type of diode: TVS array
Breakdown voltage: 5.8...10.2V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT523
Max. off-state voltage: 5V
Leakage current: 1µA
Capacitance: 0.8pF
Application: automotive industry
Kind of package: reel; tape
Version: ESD
auf Bestellung 19832 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
334+0.25 EUR
417+0.2 EUR
468+0.18 EUR
550+0.15 EUR
589+0.14 EUR
4000+0.13 EUR
8000+0.12 EUR
12000+0.11 EUR
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PJE8400_R1_00001 PJE8400.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.1A; SOT523
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.1A
Gate-source voltage: 12V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Produkt ist nicht verfügbar
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PJE8401_R1_00001 PJE8401.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 900mA; SOT523
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.9A
Gate-source voltage: 12V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Produkt ist nicht verfügbar
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PJE8402_R1_00001 PJE8402.pdf
PJE8402_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 700mA; Idm: 2.8A; 300mW; SOT523
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 20V
Pulsed drain current: 2.8A
Drain current: 0.7A
Gate charge: 1.6nC
Power dissipation: 0.3W
On-state resistance: 0.4Ω
Gate-source voltage: ±8V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Produkt ist nicht verfügbar
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PJE8403_R1_00001 PJE8403.pdf
PJE8403_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -600mA; Idm: -2.4A; 300mW
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Pulsed drain current: -2.4A
Power dissipation: 0.3W
Gate charge: 2.2nC
Polarisation: unipolar
Drain current: -600mA
Kind of channel: enhancement
Drain-source voltage: -20V
Type of transistor: P-MOSFET
Gate-source voltage: ±8V
On-state resistance: 0.6Ω
auf Bestellung 3975 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
200+0.43 EUR
379+0.23 EUR
486+0.18 EUR
550+0.15 EUR
736+0.12 EUR
1000+0.11 EUR
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PJE8404_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 600mA; SOT523
Case: SOT523
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.6A
Gate-source voltage: 8V
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Produkt ist nicht verfügbar
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PJE8405_R1_00001 PJE8405.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 500mA; SOT523
Case: SOT523
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 0.5A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: 8V
Produkt ist nicht verfügbar
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PJE8406TB89_R1_00701
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 800mA; SC89
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.8A
Case: SC89
Gate-source voltage: 12V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJE8407_R1_00001 PJE8407.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 500mA; SOT523
Mounting: SMD
Polarisation: unipolar
Drain current: 0.5A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: 10V
Kind of package: reel; tape
Case: SOT523
Produkt ist nicht verfügbar
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PJE8408_R1_00001 PJE8408.pdf
PJE8408_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 500mA; Idm: 1A; 300mW; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.5A
Pulsed drain current: 1A
Power dissipation: 0.3W
Case: SOT523
Gate-source voltage: ±10V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3480 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
455+0.19 EUR
695+0.12 EUR
807+0.11 EUR
Mindestbestellmenge: 455 Stücke
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PJE8428_R1_00001 PJE8428
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; SOT523
Mounting: SMD
Polarisation: unipolar
Drain current: 0.3A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: 10V
Kind of package: reel; tape
Case: SOT523
Produkt ist nicht verfügbar
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PJE8472B_R1_00001 PJE8472B.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; SOT523
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 0.2A
Case: SOT523
Gate-source voltage: 30V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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PJEC12VM1TA-AU_R1_000A1 PJEC12VM1TA-AU_SERIES.pdf
PJEC12VM1TA-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 16.5V; 3A; bidirectional; SOT23; Ch: 2
Mounting: SMD
Breakdown voltage: 16.5V
Max. forward impulse current: 3A
Application: automotive industry
Max. off-state voltage: 12V
Semiconductor structure: bidirectional
Leakage current: 50nA
Case: SOT23
Capacitance: 10pF
Type of diode: TVS
Number of channels: 2
Produkt ist nicht verfügbar
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PJEC12VM1TA_R1_00001 PJEC12VM1TA
PJEC12VM1TA_R1_00001
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 16.5V; 3A; bidirectional; SOT23; Ch: 2
Mounting: SMD
Breakdown voltage: 16.5V
Max. forward impulse current: 3A
Max. off-state voltage: 12V
Semiconductor structure: bidirectional
Leakage current: 50nA
Case: SOT23
Capacitance: 10pF
Type of diode: TVS
Number of channels: 2
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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PJEC2415VM1WS-AU_R1_000A1 PJEC2415VM1WS-AU
PJEC2415VM1WS-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 17.1÷30.3V; 160W; asymmetric,bidirectional; ESD; Ch: 1
Capacitance: 17pF
Mounting: SMD
Kind of package: reel; tape
Peak pulse power dissipation: 0.16kW
Version: ESD
Application: automotive industry
Max. off-state voltage: 15...24V
Semiconductor structure: asymmetric; bidirectional
Leakage current: 50nA
Case: SOD323
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 17.1...30.3V
Produkt ist nicht verfügbar
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PJEC2415VM1WS_R1_00001 PJEC2415VM1WS.pdf
PJEC2415VM1WS_R1_00001
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 30.3V; 3A; 0.16kW; bidirectional; SOD323; Ch: 1
Mounting: SMD
Peak pulse power dissipation: 0.16kW
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Leakage current: 50nA
Case: SOD323
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 30.3V
Max. forward impulse current: 3A
Produkt ist nicht verfügbar
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PJEC24MTA-AU_R1_000A1 PJEC24MTA-AU.pdf
PJEC24MTA-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 30.3V; 4A; bidirectional; SOT23; Ch: 2
Capacitance: 11pF
Mounting: SMD
Application: automotive industry
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Leakage current: 50nA
Case: SOT23
Type of diode: TVS
Number of channels: 2
Breakdown voltage: 30.3V
Max. forward impulse current: 4A
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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PJEC24MTA_R1_00001 PJEC24MTA.pdf
PJEC24MTA_R1_00001
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 30.3V; 4A; bidirectional; SOT23; Ch: 2
Capacitance: 11pF
Mounting: SMD
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Leakage current: 50nA
Case: SOT23
Type of diode: TVS
Number of channels: 2
Breakdown voltage: 30.3V
Max. forward impulse current: 4A
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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PJF18N20_T0_00001 PJx18N20.pdf
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 18A; ITO220AB
Case: ITO220AB
Mounting: SMD
Drain current: 18A
Gate-source voltage: 20V
Drain-source voltage: 200V
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Produkt ist nicht verfügbar
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PJGBLC03C-AU_R1_000A1 PJGBLC24C-AU
PJGBLC03C-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 4.75÷5.25V; 1A; 350W; bidirectional; ESD; SOD323
Type of diode: TVS array
Breakdown voltage: 4.75...5.25V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 3.3V
Leakage current: 20µA
Number of channels: 1
Capacitance: 3pF
Kind of package: reel; tape
Version: ESD
Application: automotive industry
Produkt ist nicht verfügbar
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PJGBLC03C_R1_00001 PJGBLC03_C24C_SERIES.pdf
PJGBLC03C_R1_00001
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 4.75÷5.25V; 1A; 350W; bidirectional; SOD323; Ch: 1
Type of diode: TVS array
Breakdown voltage: 4.75...5.25V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 3.3V
Leakage current: 20µA
Number of channels: 1
Capacitance: 3pF
Kind of package: reel; tape
Produkt ist nicht verfügbar
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PJGBLC05C_R1_00001 PJGBLC03_C24C_SERIES.pdf
PJGBLC05C_R1_00001
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 7.03÷7.77V; 1A; 350W; bidirectional; SOD323; Ch: 1
Mounting: SMD
Breakdown voltage: 7.03...7.77V
Max. forward impulse current: 1A
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 5V
Kind of package: reel; tape
Semiconductor structure: bidirectional
Leakage current: 5µA
Case: SOD323
Capacitance: 3pF
Type of diode: TVS array
Number of channels: 1
auf Bestellung 800 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
218+0.39 EUR
309+0.27 EUR
472+0.18 EUR
650+0.13 EUR
Mindestbestellmenge: 218 Stücke
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PJGL12_R1_00001
PJGL12_R1_00001
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 13.3V; 5A; unidirectional; SOT23; Ch: 1
Type of diode: TVS
Case: SOT23
Mounting: SMD
Max. off-state voltage: 12V
Semiconductor structure: unidirectional
Capacitance: 1.2pF
Max. forward impulse current: 5A
Breakdown voltage: 13.3V
Leakage current: 1µA
Number of channels: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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