Produkte > PANJIT SEMICONDUCTOR > Alle Produkte des Herstellers PANJIT SEMICONDUCTOR (1815) > Seite 27 nach 31
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| PJSD36CW-AU_R1_000A1 | PanJit Semiconductor |
 Category: Protection diodes - arraysDescription: Diode: TVS; 40.57V; 3A; 0.35kW; bidirectional; SOD323; Ch: 1 Type of diode: TVS Peak pulse power dissipation: 0.35kW Max. off-state voltage: 36V Breakdown voltage: 40.57V Max. forward impulse current: 3A Semiconductor structure: bidirectional Case: SOD323 Mounting: SMD Leakage current: 1µA Capacitance: 45pF Number of channels: 1 Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| PJSD36CW_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 29.4V; 3A; 0.35kW; bidirectional; SOD323; Ch: 1 Type of diode: TVS Breakdown voltage: 29.4V Max. forward impulse current: 3A Peak pulse power dissipation: 0.35kW Semiconductor structure: bidirectional Mounting: SMD Case: SOD323 Max. off-state voltage: 36V Leakage current: 1µA Number of channels: 1 Capacitance: 45pF |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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PJSD36TS-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 40V; 1A; 0.12kW; unidirectional; SOD523; Ch: 1 Mounting: SMD Peak pulse power dissipation: 0.12kW Application: automotive industry Max. off-state voltage: 36V Semiconductor structure: unidirectional Leakage current: 5µA Case: SOD523 Capacitance: 20pF Type of diode: TVS Number of channels: 1 Breakdown voltage: 40V Max. forward impulse current: 1A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJSOT24C-05-AU_R1_000A1 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 29.4V; 12A; 0.35kW; unidirectional; SOT23; Ch: 2 Type of diode: TVS Breakdown voltage: 29.4V Max. forward impulse current: 12A Peak pulse power dissipation: 0.35kW Semiconductor structure: unidirectional Mounting: SMD Case: SOT23 Max. off-state voltage: 24V Leakage current: 1µA Number of channels: 2 Capacitance: 0.15nF Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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PJT7002H_R1_00001 | PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30V; 300mA; SOT363 Case: SOT363 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Drain current: 0.3A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N/P-MOSFET Gate-source voltage: 10V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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PJT7002KDW_R1_00501 | PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 30V; 300mA; SOT363 Case: SOT363 Mounting: SMD Kind of package: reel; tape Polarisation: unipolar Drain current: 0.3A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N/P-MOSFET Gate-source voltage: 10V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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PJT7600_R1_00001 | PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 20/-20V Drain current: 1A/-700mA Power dissipation: 0.35W Case: SOT363 Gate-source voltage: ±8V On-state resistance: 400/600mΩ Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape Gate charge: 1.6/2.2nC |
auf Bestellung 2685 Stücke: Lieferzeit 14-21 Tag (e) |
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PJT7603_R1_00001 | PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 50/-60V Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 50/-60V Drain current: -250/400mA Power dissipation: 0.35W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 2.5/6Ω Mounting: SMD Kind of channel: enhancement Kind of transistor: complementary pair Kind of package: reel; tape Gate charge: 0.95/1.1nC |
auf Bestellung 2750 Stücke: Lieferzeit 14-21 Tag (e) |
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PJT7800_R1_00001 | PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT363 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 20V Drain current: 1A Power dissipation: 0.35W Case: SOT363 Gate-source voltage: ±8V On-state resistance: 0.4Ω Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape Pulsed drain current: 4A Gate charge: 1.6nC |
auf Bestellung 5968 Stücke: Lieferzeit 14-21 Tag (e) |
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PJT7801_R1_00001 | PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: P-MOSFET x2; unipolar; -20V; -700mA; Idm: -2.8A; 350mW Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -20V Drain current: -700mA Power dissipation: 0.35W Case: SOT363 Gate-source voltage: ±8V On-state resistance: 0.6Ω Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape Pulsed drain current: -2.8A Gate charge: 2.2nC |
auf Bestellung 2844 Stücke: Lieferzeit 14-21 Tag (e) |
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| PJT7812_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363 Type of transistor: P-MOSFET x2 Polarisation: unipolar Drain-source voltage: -60V Drain current: -250mA Case: SOT363 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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PJT7838_R1_00001 | PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 50V; 400mA; Idm: 1.2A; 350mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.4A Power dissipation: 0.35W Case: SOT363 Gate-source voltage: ±20V On-state resistance: 6Ω Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape Pulsed drain current: 1.2A Gate charge: 0.95nC |
auf Bestellung 7642 Stücke: Lieferzeit 14-21 Tag (e) |
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| PJUSB05-4_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 6.37V; 0.15kW; unidirectional; SOT23-6L; Ch: 5 Type of diode: TVS Breakdown voltage: 6.37V Semiconductor structure: unidirectional Mounting: SMD Case: SOT23-6L Max. off-state voltage: 5V Leakage current: 1µA Number of channels: 5 Capacitance: 8.5pF Peak pulse power dissipation: 0.15kW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| PJUSB208_R1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 85V; unidirectional; SOT23-6L; Ch: 4 Type of diode: TVS Breakdown voltage: 85V Semiconductor structure: unidirectional Mounting: SMD Case: SOT23-6L Max. off-state voltage: 70V Leakage current: 1µA Number of channels: 4 Capacitance: 1pF |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| PJUSB208_S1_00001 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 85V; unidirectional; SOT23-6L; Ch: 4 Type of diode: TVS Breakdown voltage: 85V Semiconductor structure: unidirectional Mounting: SMD Case: SOT23-6L Max. off-state voltage: 70V Leakage current: 1µA Number of channels: 4 Capacitance: 1pF |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| PJW3P06A-AU_R2_007A1 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3A; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -3A Case: SOT223 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| PJW3P06A_R2_00701 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -3A; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -3A Case: SOT223 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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PJW4N06A-AU_R2_000A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; Idm: 8A; 2.6W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 3.2A Pulsed drain current: 8A Power dissipation: 2.6W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 5.1nC Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 42500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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PJW4N06A_R2_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 8A; 3.1W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 4A Pulsed drain current: 8A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.11Ω Mounting: SMD Gate charge: 5.1nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 42500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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PJW4P06A-AU_R2_007A1 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -4A; Idm: -16A; 3.1W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -4A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Kind of channel: enhancement Application: automotive industry Kind of package: reel; tape Pulsed drain current: -16A Gate charge: 10nC |
auf Bestellung 932 Stücke: Lieferzeit 14-21 Tag (e) |
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PJW4P06A_R2_00701 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -4A; Idm: -16A; 3.1W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -4A Power dissipation: 3.1W Case: SOT223 Gate-source voltage: ±20V On-state resistance: 0.13Ω Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape Pulsed drain current: -16A Gate charge: 10nC |
auf Bestellung 2320 Stücke: Lieferzeit 14-21 Tag (e) |
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PJW5P06A-AU_R2_000A1 | PanJit Semiconductor |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -5A; Idm: -20A; 1W; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -5A Case: SOT223 Gate-source voltage: ±20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: -20A Application: automotive industry Gate charge: 17nC On-state resistance: 85mΩ Power dissipation: 1W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJW5P06A_R2_00701 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: P-MOSFET; unipolar; -60V; -5A; SOT223 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -60V Drain current: -5A Case: SOT223 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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PJW7N06A-AU_R2_007A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 6.6A; SOT223 Case: SOT223 Mounting: SMD Polarisation: unipolar Drain current: 6.6A Kind of channel: enhancement Drain-source voltage: 60V Application: automotive industry Type of transistor: N-MOSFET Gate-source voltage: 20V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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PJW7N06A_R2_00701 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 6.6A; SOT223 Case: SOT223 Mounting: SMD Polarisation: unipolar Drain current: 6.6A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: 20V Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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PJX138K_R1_00001 | PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; Idm: 1.2A; 223mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.35A Power dissipation: 223mW Case: SOT563 Gate-source voltage: ±20V On-state resistance: 4.5Ω Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape Pulsed drain current: 1.2A Gate charge: 1nC |
auf Bestellung 3520 Stücke: Lieferzeit 14-21 Tag (e) |
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PJX8603_R1_00001 | PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; unipolar; 50/-60V; 360/-200mA; 300mW Type of transistor: N/P-MOSFET Polarisation: unipolar Drain-source voltage: 50/-60V Drain current: 360/-200mA Power dissipation: 0.3W Case: SOT563 Gate-source voltage: ±20V On-state resistance: 2.5/7Ω Mounting: SMD Kind of channel: enhancement Kind of package: reel; tape Gate charge: 0.95/1.1nC |
auf Bestellung 1647 Stücke: Lieferzeit 14-21 Tag (e) |
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PJX8812_R1_00001 | PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; SOT563 Mounting: SMD Polarisation: unipolar Drain current: 0.3A Kind of channel: enhancement Drain-source voltage: 30V Type of transistor: N-MOSFET x2 Gate-source voltage: 10V Kind of package: reel; tape Case: SOT563 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PJX8828-AU_R1_000A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; SOT563 Kind of channel: enhancement Mounting: SMD Case: SOT563 Type of transistor: N-MOSFET x2 Drain current: 0.3A Gate-source voltage: 10V Drain-source voltage: 30V Polarisation: unipolar Application: automotive industry Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| PJX8828_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; SOT563 Kind of channel: enhancement Mounting: SMD Case: SOT563 Type of transistor: N-MOSFET x2 Drain current: 0.3A Gate-source voltage: 10V Drain-source voltage: 30V Polarisation: unipolar Kind of package: reel; tape |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| PJX8839_R1_00001 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8 Mounting: SMD Type of transistor: N-MOSFET Kind of package: reel; tape Gate-source voltage: 20V Drain-source voltage: 60V Drain current: 68A Polarisation: unipolar Case: DFN5060-8 Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| PM1008LL_R2_00601 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 10A; Ifsm: 190A; M8 Max. forward impulse current: 190A Max. forward voltage: 0.95V Max. off-state voltage: 0.8kV Electrical mounting: SMT Load current: 10A Case: M8 Type of bridge rectifier: single-phase |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| PM1010_R2_00601 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 190A; M8 Max. forward impulse current: 190A Max. forward voltage: 0.95V Max. off-state voltage: 1kV Electrical mounting: SMT Load current: 10A Case: M8 Type of bridge rectifier: single-phase |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| PM810_R2_00601 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 170A; M8 Case: M8 Type of bridge rectifier: single-phase Max. forward voltage: 1.05V Load current: 8A Max. forward impulse current: 170A Max. off-state voltage: 1kV Electrical mounting: SMT |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| PMS210_R2_00601 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 70A; M4 Case: M4 Max. forward voltage: 1.05V Max. off-state voltage: 1kV Electrical mounting: SMT Load current: 2A Type of bridge rectifier: single-phase Max. forward impulse current: 70A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| PMS310_R2_00601 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 3A; Ifsm: 110A; M4 Case: M4 Type of bridge rectifier: single-phase Electrical mounting: SMT Max. forward voltage: 1.05V Load current: 3A Max. forward impulse current: 110A Max. off-state voltage: 1kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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PMS410_R2_00601 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 120A; M4 Kind of package: reel; tape Features of semiconductor devices: glass passivated Case: M4 Type of bridge rectifier: single-phase Electrical mounting: SMT Max. forward voltage: 1.05V Load current: 4A Max. forward impulse current: 120A Max. off-state voltage: 1kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PMSM408_R2_00301 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 120A; M6 Electrical mounting: SMT Load current: 4A Case: M6 Type of bridge rectifier: single-phase Max. forward impulse current: 120A Max. forward voltage: 1V Max. off-state voltage: 0.8kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| PMSM410_R2_00301 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 120A; M6 Electrical mounting: SMT Load current: 4A Case: M6 Type of bridge rectifier: single-phase Max. forward impulse current: 120A Max. forward voltage: 1V Max. off-state voltage: 1kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| PMSM608_R2_00301 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 150A; M6 Electrical mounting: SMT Load current: 6A Case: M6 Type of bridge rectifier: single-phase Max. forward impulse current: 150A Max. forward voltage: 1V Max. off-state voltage: 0.8kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| PMSM610_R2_00301 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 150A; M6 Electrical mounting: SMT Load current: 6A Case: M6 Type of bridge rectifier: single-phase Max. forward impulse current: 150A Max. forward voltage: 1V Max. off-state voltage: 1kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| PMSM808LL_R2_00301 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 150A; M6 Electrical mounting: SMT Load current: 8A Case: M6 Type of bridge rectifier: single-phase Max. forward impulse current: 150A Max. forward voltage: 1V Max. off-state voltage: 0.8kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| PMSM808_R2_00301 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 150A; M6 Electrical mounting: SMT Load current: 8A Case: M6 Type of bridge rectifier: single-phase Max. forward impulse current: 150A Max. forward voltage: 1V Max. off-state voltage: 0.8kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| PMSM810_R2_00301 | PanJit Semiconductor |
Category: SMD/THT sing. phase diode bridge rectif. Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 200A; M6 Electrical mounting: SMT Load current: 8A Case: M6 Type of bridge rectifier: single-phase Max. forward impulse current: 200A Max. forward voltage: 1V Max. off-state voltage: 1kV |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| PS1405-D32_R1_00301 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 6V; 5A; bidirectional; DFN2; Ch: 1 Mounting: SMD Breakdown voltage: 6V Max. forward impulse current: 5A Max. off-state voltage: 5V Semiconductor structure: bidirectional Leakage current: 0.5µA Case: DFN2 Capacitance: 0.42pF Type of diode: TVS Number of channels: 1 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| PS140M-D32_R1_00301 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 25.5V; 10A; bidirectional; DFN2; Ch: 1 Mounting: SMD Breakdown voltage: 25.5V Max. forward impulse current: 10A Max. off-state voltage: 24V Semiconductor structure: bidirectional Leakage current: 0.5µA Case: DFN2 Capacitance: 0.5pF Type of diode: TVS Number of channels: 1 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| PS161M-D62_R1_00301 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; DFN1006-2 Case: DFN1006-2 Mounting: SMD Type of diode: TVS |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| PS2705-D63_R1_00301 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 6V; 5A; bidirectional; Ch: 2 Type of diode: TVS Breakdown voltage: 6V Max. forward impulse current: 5A Semiconductor structure: bidirectional Mounting: SMD Max. off-state voltage: 5V Leakage current: 0.5µA Number of channels: 2 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| PS5915-S26_S1_00301 | PanJit Semiconductor |
Category: Protection diodes - arrays Description: Diode: TVS; 5.5V; 5A; unidirectional; SOT23-6L; Ch: 5 Type of diode: TVS Breakdown voltage: 5.5V Max. forward impulse current: 5A Semiconductor structure: unidirectional Mounting: SMD Case: SOT23-6L Max. off-state voltage: 5V Leakage current: 1µA Number of channels: 5 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| PSMB033N10NS2_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 68A; Idm: 219A; 333W; DFN5060-8 Pulsed drain current: 219A Power dissipation: 333W Gate charge: 85nC Polarisation: unipolar Drain current: 68A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: 20V Kind of package: reel; tape Case: DFN5060-8 On-state resistance: 3.4mΩ Mounting: SMD |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2400 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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PSMB055N08NS1_R2_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 108A Power dissipation: 113.6W Case: TO263 Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Pulsed drain current: 360A Gate charge: 65.8nC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PSMN015N10NS2_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 398A; Idm: 1592A; 250W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 398A Pulsed drain current: 1592A Power dissipation: 250W Case: TOLL Gate-source voltage: ±20V On-state resistance: 1.5mΩ Mounting: SMD Gate charge: 128nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| PSMN028N10NS2_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 240A; Idm: 960A; 167W; TOLL Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 240A Pulsed drain current: 960A Power dissipation: 167W Case: TOLL Gate-source voltage: ±20V On-state resistance: 2.8mΩ Mounting: SMD Gate charge: 65nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| PSMP033N10NS2_T0_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 68A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
 |
PSMP055N08NS1_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 80V Drain current: 111A Power dissipation: 136W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 7mΩ Mounting: THT Kind of package: tube Kind of channel: enhancement Pulsed drain current: 360A Gate charge: 65.8nC |
auf Bestellung 79 Stücke: Lieferzeit 14-21 Tag (e) |
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PSMP075N15NS1_T0_00601 | PanJit Semiconductor |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 150V; 125A; Idm: 350A; 258.6W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 150V Drain current: 125A Pulsed drain current: 350A Power dissipation: 258.6W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 9mΩ Mounting: THT Gate charge: 97nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PSMQC039N10NS2_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 89A; 125W; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 89A Power dissipation: 125W Case: DFN5060-8 Gate-source voltage: 20V On-state resistance: 3.5mΩ Mounting: SMD Gate charge: 46nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 9000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
 |
PSMQC040N10NS2_R2_00601 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 122A; Idm: 488A; 125W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 122A Pulsed drain current: 488A Power dissipation: 125W Case: DFN5060-8 Gate-source voltage: ±20V On-state resistance: 6.5mΩ Mounting: SMD Gate charge: 53nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| PSMQC042N10LS2_R2_00201 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 109A; 115W; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 109A Power dissipation: 115W Case: DFN5060-8 Gate-source voltage: 20V On-state resistance: 4.2mΩ Mounting: SMD Gate charge: 58nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 9000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| PSMQC060N06LS1-AU_R2_006A1 | PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 68A Case: DFN5060-8 Gate-source voltage: 20V Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Application: automotive industry |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| PJSD36CW-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 40.57V; 3A; 0.35kW; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 36V
Breakdown voltage: 40.57V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 1µA
Capacitance: 45pF
Number of channels: 1
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS; 40.57V; 3A; 0.35kW; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Peak pulse power dissipation: 0.35kW
Max. off-state voltage: 36V
Breakdown voltage: 40.57V
Max. forward impulse current: 3A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 1µA
Capacitance: 45pF
Number of channels: 1
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PJSD36CW_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 29.4V; 3A; 0.35kW; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Breakdown voltage: 29.4V
Max. forward impulse current: 3A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 36V
Leakage current: 1µA
Number of channels: 1
Capacitance: 45pF
Category: Protection diodes - arrays
Description: Diode: TVS; 29.4V; 3A; 0.35kW; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Breakdown voltage: 29.4V
Max. forward impulse current: 3A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 36V
Leakage current: 1µA
Number of channels: 1
Capacitance: 45pF
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PJSD36TS-AU_R1_000A1 |
|
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 40V; 1A; 0.12kW; unidirectional; SOD523; Ch: 1
Mounting: SMD
Peak pulse power dissipation: 0.12kW
Application: automotive industry
Max. off-state voltage: 36V
Semiconductor structure: unidirectional
Leakage current: 5µA
Case: SOD523
Capacitance: 20pF
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 40V
Max. forward impulse current: 1A
Category: Protection diodes - arrays
Description: Diode: TVS; 40V; 1A; 0.12kW; unidirectional; SOD523; Ch: 1
Mounting: SMD
Peak pulse power dissipation: 0.12kW
Application: automotive industry
Max. off-state voltage: 36V
Semiconductor structure: unidirectional
Leakage current: 5µA
Case: SOD523
Capacitance: 20pF
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 40V
Max. forward impulse current: 1A
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PJSOT24C-05-AU_R1_000A1 |
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 29.4V; 12A; 0.35kW; unidirectional; SOT23; Ch: 2
Type of diode: TVS
Breakdown voltage: 29.4V
Max. forward impulse current: 12A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Leakage current: 1µA
Number of channels: 2
Capacitance: 0.15nF
Application: automotive industry
Category: Protection diodes - arrays
Description: Diode: TVS; 29.4V; 12A; 0.35kW; unidirectional; SOT23; Ch: 2
Type of diode: TVS
Breakdown voltage: 29.4V
Max. forward impulse current: 12A
Peak pulse power dissipation: 0.35kW
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23
Max. off-state voltage: 24V
Leakage current: 1µA
Number of channels: 2
Capacitance: 0.15nF
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PJT7002H_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30V; 300mA; SOT363
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 0.3A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N/P-MOSFET
Gate-source voltage: 10V
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30V; 300mA; SOT363
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 0.3A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N/P-MOSFET
Gate-source voltage: 10V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJT7002KDW_R1_00501 |
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30V; 300mA; SOT363
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 0.3A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N/P-MOSFET
Gate-source voltage: 10V
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 30V; 300mA; SOT363
Case: SOT363
Mounting: SMD
Kind of package: reel; tape
Polarisation: unipolar
Drain current: 0.3A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N/P-MOSFET
Gate-source voltage: 10V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJT7600_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 1A/-700mA
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±8V
On-state resistance: 400/600mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Gate charge: 1.6/2.2nC
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 20/-20V; 1A/-700mA; 350mW
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 20/-20V
Drain current: 1A/-700mA
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±8V
On-state resistance: 400/600mΩ
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Gate charge: 1.6/2.2nC
auf Bestellung 2685 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 143+ | 0.6 EUR |
| 304+ | 0.29 EUR |
| 368+ | 0.23 EUR |
| 410+ | 0.2 EUR |
| 550+ | 0.15 EUR |
| 1000+ | 0.14 EUR |
| PJT7603_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 50/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 50/-60V
Drain current: -250/400mA
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 2.5/6Ω
Mounting: SMD
Kind of channel: enhancement
Kind of transistor: complementary pair
Kind of package: reel; tape
Gate charge: 0.95/1.1nC
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; complementary pair; 50/-60V
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 50/-60V
Drain current: -250/400mA
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 2.5/6Ω
Mounting: SMD
Kind of channel: enhancement
Kind of transistor: complementary pair
Kind of package: reel; tape
Gate charge: 0.95/1.1nC
auf Bestellung 2750 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 209+ | 0.4 EUR |
| 313+ | 0.27 EUR |
| 569+ | 0.15 EUR |
| 738+ | 0.12 EUR |
| 1000+ | 0.11 EUR |
| PJT7800_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±8V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 4A
Gate charge: 1.6nC
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±8V
On-state resistance: 0.4Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 4A
Gate charge: 1.6nC
auf Bestellung 5968 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 455+ | 0.19 EUR |
| 596+ | 0.14 EUR |
| 650+ | 0.13 EUR |
| 715+ | 0.12 EUR |
| 1000+ | 0.11 EUR |
| 3000+ | 0.11 EUR |
| PJT7801_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -700mA; Idm: -2.8A; 350mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -700mA
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±8V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: -2.8A
Gate charge: 2.2nC
Category: Multi channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -20V; -700mA; Idm: -2.8A; 350mW
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -700mA
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±8V
On-state resistance: 0.6Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: -2.8A
Gate charge: 2.2nC
auf Bestellung 2844 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 125+ | 0.68 EUR |
| 260+ | 0.33 EUR |
| 575+ | 0.14 EUR |
| 642+ | 0.13 EUR |
| 695+ | 0.12 EUR |
| 758+ | 0.11 EUR |
| 1000+ | 0.11 EUR |
| PJT7812_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -250mA
Case: SOT363
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: P-MOSFET x2; unipolar; -60V; -250mA; SOT363
Type of transistor: P-MOSFET x2
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -250mA
Case: SOT363
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJT7838_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 400mA; Idm: 1.2A; 350mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.4A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 1.2A
Gate charge: 0.95nC
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 400mA; Idm: 1.2A; 350mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.4A
Power dissipation: 0.35W
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 1.2A
Gate charge: 0.95nC
auf Bestellung 7642 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 417+ | 0.2 EUR |
| 527+ | 0.17 EUR |
| 569+ | 0.15 EUR |
| 596+ | 0.14 EUR |
| 1000+ | 0.13 EUR |
| 3000+ | 0.12 EUR |
| PJUSB05-4_R1_00001 |
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6.37V; 0.15kW; unidirectional; SOT23-6L; Ch: 5
Type of diode: TVS
Breakdown voltage: 6.37V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23-6L
Max. off-state voltage: 5V
Leakage current: 1µA
Number of channels: 5
Capacitance: 8.5pF
Peak pulse power dissipation: 0.15kW
Category: Protection diodes - arrays
Description: Diode: TVS; 6.37V; 0.15kW; unidirectional; SOT23-6L; Ch: 5
Type of diode: TVS
Breakdown voltage: 6.37V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23-6L
Max. off-state voltage: 5V
Leakage current: 1µA
Number of channels: 5
Capacitance: 8.5pF
Peak pulse power dissipation: 0.15kW
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PJUSB208_R1_00001 |
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 85V; unidirectional; SOT23-6L; Ch: 4
Type of diode: TVS
Breakdown voltage: 85V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23-6L
Max. off-state voltage: 70V
Leakage current: 1µA
Number of channels: 4
Capacitance: 1pF
Category: Protection diodes - arrays
Description: Diode: TVS; 85V; unidirectional; SOT23-6L; Ch: 4
Type of diode: TVS
Breakdown voltage: 85V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23-6L
Max. off-state voltage: 70V
Leakage current: 1µA
Number of channels: 4
Capacitance: 1pF
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PJUSB208_S1_00001 |
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 85V; unidirectional; SOT23-6L; Ch: 4
Type of diode: TVS
Breakdown voltage: 85V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23-6L
Max. off-state voltage: 70V
Leakage current: 1µA
Number of channels: 4
Capacitance: 1pF
Category: Protection diodes - arrays
Description: Diode: TVS; 85V; unidirectional; SOT23-6L; Ch: 4
Type of diode: TVS
Breakdown voltage: 85V
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23-6L
Max. off-state voltage: 70V
Leakage current: 1µA
Number of channels: 4
Capacitance: 1pF
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| PJW3P06A-AU_R2_007A1 |
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3A
Case: SOT223
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3A
Case: SOT223
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
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Im Einkaufswagen
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| PJW3P06A_R2_00701 |
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3A
Case: SOT223
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -3A; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -3A
Case: SOT223
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| PJW4N06A-AU_R2_000A1 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; Idm: 8A; 2.6W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Pulsed drain current: 8A
Power dissipation: 2.6W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 3.2A; Idm: 8A; 2.6W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 3.2A
Pulsed drain current: 8A
Power dissipation: 2.6W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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| PJW4N06A_R2_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 8A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 4A; Idm: 8A; 3.1W; SOT223
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 4A
Pulsed drain current: 8A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.11Ω
Mounting: SMD
Gate charge: 5.1nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 42500 Stücke
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| PJW4P06A-AU_R2_007A1 |
|
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4A; Idm: -16A; 3.1W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Kind of package: reel; tape
Pulsed drain current: -16A
Gate charge: 10nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4A; Idm: -16A; 3.1W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Kind of package: reel; tape
Pulsed drain current: -16A
Gate charge: 10nC
auf Bestellung 932 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 97+ | 0.88 EUR |
| 146+ | 0.58 EUR |
| 229+ | 0.37 EUR |
| 272+ | 0.31 EUR |
| 500+ | 0.27 EUR |
| PJW4P06A_R2_00701 |
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4A; Idm: -16A; 3.1W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: -16A
Gate charge: 10nC
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -4A; Idm: -16A; 3.1W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -4A
Power dissipation: 3.1W
Case: SOT223
Gate-source voltage: ±20V
On-state resistance: 0.13Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: -16A
Gate charge: 10nC
auf Bestellung 2320 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 91+ | 0.94 EUR |
| 133+ | 0.64 EUR |
| 200+ | 0.43 EUR |
| 500+ | 0.33 EUR |
| 1000+ | 0.3 EUR |
| PJW5P06A-AU_R2_000A1 |
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5A; Idm: -20A; 1W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5A
Case: SOT223
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -20A
Application: automotive industry
Gate charge: 17nC
On-state resistance: 85mΩ
Power dissipation: 1W
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5A; Idm: -20A; 1W; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5A
Case: SOT223
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: -20A
Application: automotive industry
Gate charge: 17nC
On-state resistance: 85mΩ
Power dissipation: 1W
Produkt ist nicht verfügbar
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| PJW5P06A_R2_00701 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5A; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5A
Case: SOT223
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -5A; SOT223
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -5A
Case: SOT223
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
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| PJW7N06A-AU_R2_007A1 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.6A; SOT223
Case: SOT223
Mounting: SMD
Polarisation: unipolar
Drain current: 6.6A
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.6A; SOT223
Case: SOT223
Mounting: SMD
Polarisation: unipolar
Drain current: 6.6A
Kind of channel: enhancement
Drain-source voltage: 60V
Application: automotive industry
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
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Stück im Wert von UAH
| PJW7N06A_R2_00701 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.6A; SOT223
Case: SOT223
Mounting: SMD
Polarisation: unipolar
Drain current: 6.6A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 6.6A; SOT223
Case: SOT223
Mounting: SMD
Polarisation: unipolar
Drain current: 6.6A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
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| PJX138K_R1_00001 |
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; Idm: 1.2A; 223mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Power dissipation: 223mW
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 1.2A
Gate charge: 1nC
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 350mA; Idm: 1.2A; 223mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.35A
Power dissipation: 223mW
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: 1.2A
Gate charge: 1nC
auf Bestellung 3520 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 278+ | 0.31 EUR |
| 472+ | 0.18 EUR |
| 615+ | 0.14 EUR |
| 684+ | 0.12 EUR |
| 869+ | 0.098 EUR |
| 1000+ | 0.089 EUR |
| PJX8603_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 50/-60V; 360/-200mA; 300mW
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 50/-60V
Drain current: 360/-200mA
Power dissipation: 0.3W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 2.5/7Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Gate charge: 0.95/1.1nC
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; unipolar; 50/-60V; 360/-200mA; 300mW
Type of transistor: N/P-MOSFET
Polarisation: unipolar
Drain-source voltage: 50/-60V
Drain current: 360/-200mA
Power dissipation: 0.3W
Case: SOT563
Gate-source voltage: ±20V
On-state resistance: 2.5/7Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Gate charge: 0.95/1.1nC
auf Bestellung 1647 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 200+ | 0.43 EUR |
| 327+ | 0.26 EUR |
| 468+ | 0.18 EUR |
| 582+ | 0.14 EUR |
| 1000+ | 0.13 EUR |
| PJX8812_R1_00001 |
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; SOT563
Mounting: SMD
Polarisation: unipolar
Drain current: 0.3A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Gate-source voltage: 10V
Kind of package: reel; tape
Case: SOT563
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; SOT563
Mounting: SMD
Polarisation: unipolar
Drain current: 0.3A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET x2
Gate-source voltage: 10V
Kind of package: reel; tape
Case: SOT563
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| PJX8828-AU_R1_000A1 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; SOT563
Kind of channel: enhancement
Mounting: SMD
Case: SOT563
Type of transistor: N-MOSFET x2
Drain current: 0.3A
Gate-source voltage: 10V
Drain-source voltage: 30V
Polarisation: unipolar
Application: automotive industry
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; SOT563
Kind of channel: enhancement
Mounting: SMD
Case: SOT563
Type of transistor: N-MOSFET x2
Drain current: 0.3A
Gate-source voltage: 10V
Drain-source voltage: 30V
Polarisation: unipolar
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| PJX8828_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; SOT563
Kind of channel: enhancement
Mounting: SMD
Case: SOT563
Type of transistor: N-MOSFET x2
Drain current: 0.3A
Gate-source voltage: 10V
Drain-source voltage: 30V
Polarisation: unipolar
Kind of package: reel; tape
Category: SMD N channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 300mA; SOT563
Kind of channel: enhancement
Mounting: SMD
Case: SOT563
Type of transistor: N-MOSFET x2
Drain current: 0.3A
Gate-source voltage: 10V
Drain-source voltage: 30V
Polarisation: unipolar
Kind of package: reel; tape
Produkt ist nicht verfügbar
Im Einkaufswagen
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| PJX8839_R1_00001 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Gate-source voltage: 20V
Drain-source voltage: 60V
Drain current: 68A
Polarisation: unipolar
Case: DFN5060-8
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Gate-source voltage: 20V
Drain-source voltage: 60V
Drain current: 68A
Polarisation: unipolar
Case: DFN5060-8
Kind of channel: enhancement
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| PM1008LL_R2_00601 |
|
Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 10A; Ifsm: 190A; M8
Max. forward impulse current: 190A
Max. forward voltage: 0.95V
Max. off-state voltage: 0.8kV
Electrical mounting: SMT
Load current: 10A
Case: M8
Type of bridge rectifier: single-phase
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 10A; Ifsm: 190A; M8
Max. forward impulse current: 190A
Max. forward voltage: 0.95V
Max. off-state voltage: 0.8kV
Electrical mounting: SMT
Load current: 10A
Case: M8
Type of bridge rectifier: single-phase
Produkt ist nicht verfügbar
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| PM1010_R2_00601 |
|
Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 190A; M8
Max. forward impulse current: 190A
Max. forward voltage: 0.95V
Max. off-state voltage: 1kV
Electrical mounting: SMT
Load current: 10A
Case: M8
Type of bridge rectifier: single-phase
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 10A; Ifsm: 190A; M8
Max. forward impulse current: 190A
Max. forward voltage: 0.95V
Max. off-state voltage: 1kV
Electrical mounting: SMT
Load current: 10A
Case: M8
Type of bridge rectifier: single-phase
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| PM810_R2_00601 |
|
Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 170A; M8
Case: M8
Type of bridge rectifier: single-phase
Max. forward voltage: 1.05V
Load current: 8A
Max. forward impulse current: 170A
Max. off-state voltage: 1kV
Electrical mounting: SMT
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 170A; M8
Case: M8
Type of bridge rectifier: single-phase
Max. forward voltage: 1.05V
Load current: 8A
Max. forward impulse current: 170A
Max. off-state voltage: 1kV
Electrical mounting: SMT
Produkt ist nicht verfügbar
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| PMS210_R2_00601 |
|
Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 70A; M4
Case: M4
Max. forward voltage: 1.05V
Max. off-state voltage: 1kV
Electrical mounting: SMT
Load current: 2A
Type of bridge rectifier: single-phase
Max. forward impulse current: 70A
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 2A; Ifsm: 70A; M4
Case: M4
Max. forward voltage: 1.05V
Max. off-state voltage: 1kV
Electrical mounting: SMT
Load current: 2A
Type of bridge rectifier: single-phase
Max. forward impulse current: 70A
Produkt ist nicht verfügbar
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| PMS310_R2_00601 |
|
Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 3A; Ifsm: 110A; M4
Case: M4
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1.05V
Load current: 3A
Max. forward impulse current: 110A
Max. off-state voltage: 1kV
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 3A; Ifsm: 110A; M4
Case: M4
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1.05V
Load current: 3A
Max. forward impulse current: 110A
Max. off-state voltage: 1kV
Produkt ist nicht verfügbar
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| PMS410_R2_00601 |
|
Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 120A; M4
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Case: M4
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1.05V
Load current: 4A
Max. forward impulse current: 120A
Max. off-state voltage: 1kV
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 120A; M4
Kind of package: reel; tape
Features of semiconductor devices: glass passivated
Case: M4
Type of bridge rectifier: single-phase
Electrical mounting: SMT
Max. forward voltage: 1.05V
Load current: 4A
Max. forward impulse current: 120A
Max. off-state voltage: 1kV
Produkt ist nicht verfügbar
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| PMSM408_R2_00301 |
Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 120A; M6
Electrical mounting: SMT
Load current: 4A
Case: M6
Type of bridge rectifier: single-phase
Max. forward impulse current: 120A
Max. forward voltage: 1V
Max. off-state voltage: 0.8kV
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 4A; Ifsm: 120A; M6
Electrical mounting: SMT
Load current: 4A
Case: M6
Type of bridge rectifier: single-phase
Max. forward impulse current: 120A
Max. forward voltage: 1V
Max. off-state voltage: 0.8kV
Produkt ist nicht verfügbar
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| PMSM410_R2_00301 |
Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 120A; M6
Electrical mounting: SMT
Load current: 4A
Case: M6
Type of bridge rectifier: single-phase
Max. forward impulse current: 120A
Max. forward voltage: 1V
Max. off-state voltage: 1kV
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 4A; Ifsm: 120A; M6
Electrical mounting: SMT
Load current: 4A
Case: M6
Type of bridge rectifier: single-phase
Max. forward impulse current: 120A
Max. forward voltage: 1V
Max. off-state voltage: 1kV
Produkt ist nicht verfügbar
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| PMSM608_R2_00301 |
Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 150A; M6
Electrical mounting: SMT
Load current: 6A
Case: M6
Type of bridge rectifier: single-phase
Max. forward impulse current: 150A
Max. forward voltage: 1V
Max. off-state voltage: 0.8kV
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 6A; Ifsm: 150A; M6
Electrical mounting: SMT
Load current: 6A
Case: M6
Type of bridge rectifier: single-phase
Max. forward impulse current: 150A
Max. forward voltage: 1V
Max. off-state voltage: 0.8kV
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| PMSM610_R2_00301 |
Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 150A; M6
Electrical mounting: SMT
Load current: 6A
Case: M6
Type of bridge rectifier: single-phase
Max. forward impulse current: 150A
Max. forward voltage: 1V
Max. off-state voltage: 1kV
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 6A; Ifsm: 150A; M6
Electrical mounting: SMT
Load current: 6A
Case: M6
Type of bridge rectifier: single-phase
Max. forward impulse current: 150A
Max. forward voltage: 1V
Max. off-state voltage: 1kV
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| PMSM808LL_R2_00301 |
Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 150A; M6
Electrical mounting: SMT
Load current: 8A
Case: M6
Type of bridge rectifier: single-phase
Max. forward impulse current: 150A
Max. forward voltage: 1V
Max. off-state voltage: 0.8kV
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 150A; M6
Electrical mounting: SMT
Load current: 8A
Case: M6
Type of bridge rectifier: single-phase
Max. forward impulse current: 150A
Max. forward voltage: 1V
Max. off-state voltage: 0.8kV
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| PMSM808_R2_00301 |
Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 150A; M6
Electrical mounting: SMT
Load current: 8A
Case: M6
Type of bridge rectifier: single-phase
Max. forward impulse current: 150A
Max. forward voltage: 1V
Max. off-state voltage: 0.8kV
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 800V; If: 8A; Ifsm: 150A; M6
Electrical mounting: SMT
Load current: 8A
Case: M6
Type of bridge rectifier: single-phase
Max. forward impulse current: 150A
Max. forward voltage: 1V
Max. off-state voltage: 0.8kV
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| PMSM810_R2_00301 |
Hersteller: PanJit Semiconductor
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 200A; M6
Electrical mounting: SMT
Load current: 8A
Case: M6
Type of bridge rectifier: single-phase
Max. forward impulse current: 200A
Max. forward voltage: 1V
Max. off-state voltage: 1kV
Category: SMD/THT sing. phase diode bridge rectif.
Description: Bridge rectifier: single-phase; Urmax: 1kV; If: 8A; Ifsm: 200A; M6
Electrical mounting: SMT
Load current: 8A
Case: M6
Type of bridge rectifier: single-phase
Max. forward impulse current: 200A
Max. forward voltage: 1V
Max. off-state voltage: 1kV
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| PS1405-D32_R1_00301 |
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 5A; bidirectional; DFN2; Ch: 1
Mounting: SMD
Breakdown voltage: 6V
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Semiconductor structure: bidirectional
Leakage current: 0.5µA
Case: DFN2
Capacitance: 0.42pF
Type of diode: TVS
Number of channels: 1
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 5A; bidirectional; DFN2; Ch: 1
Mounting: SMD
Breakdown voltage: 6V
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Semiconductor structure: bidirectional
Leakage current: 0.5µA
Case: DFN2
Capacitance: 0.42pF
Type of diode: TVS
Number of channels: 1
Produkt ist nicht verfügbar
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| PS140M-D32_R1_00301 |
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 25.5V; 10A; bidirectional; DFN2; Ch: 1
Mounting: SMD
Breakdown voltage: 25.5V
Max. forward impulse current: 10A
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Leakage current: 0.5µA
Case: DFN2
Capacitance: 0.5pF
Type of diode: TVS
Number of channels: 1
Category: Protection diodes - arrays
Description: Diode: TVS; 25.5V; 10A; bidirectional; DFN2; Ch: 1
Mounting: SMD
Breakdown voltage: 25.5V
Max. forward impulse current: 10A
Max. off-state voltage: 24V
Semiconductor structure: bidirectional
Leakage current: 0.5µA
Case: DFN2
Capacitance: 0.5pF
Type of diode: TVS
Number of channels: 1
Produkt ist nicht verfügbar
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| PS161M-D62_R1_00301 |
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1006-2
Case: DFN1006-2
Mounting: SMD
Type of diode: TVS
Category: Protection diodes - arrays
Description: Diode: TVS; DFN1006-2
Case: DFN1006-2
Mounting: SMD
Type of diode: TVS
Produkt ist nicht verfügbar
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| PS2705-D63_R1_00301 |
|
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 5A; bidirectional; Ch: 2
Type of diode: TVS
Breakdown voltage: 6V
Max. forward impulse current: 5A
Semiconductor structure: bidirectional
Mounting: SMD
Max. off-state voltage: 5V
Leakage current: 0.5µA
Number of channels: 2
Category: Protection diodes - arrays
Description: Diode: TVS; 6V; 5A; bidirectional; Ch: 2
Type of diode: TVS
Breakdown voltage: 6V
Max. forward impulse current: 5A
Semiconductor structure: bidirectional
Mounting: SMD
Max. off-state voltage: 5V
Leakage current: 0.5µA
Number of channels: 2
Produkt ist nicht verfügbar
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| PS5915-S26_S1_00301 |
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 5A; unidirectional; SOT23-6L; Ch: 5
Type of diode: TVS
Breakdown voltage: 5.5V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23-6L
Max. off-state voltage: 5V
Leakage current: 1µA
Number of channels: 5
Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 5A; unidirectional; SOT23-6L; Ch: 5
Type of diode: TVS
Breakdown voltage: 5.5V
Max. forward impulse current: 5A
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23-6L
Max. off-state voltage: 5V
Leakage current: 1µA
Number of channels: 5
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| PSMB033N10NS2_R2_00201 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; Idm: 219A; 333W; DFN5060-8
Pulsed drain current: 219A
Power dissipation: 333W
Gate charge: 85nC
Polarisation: unipolar
Drain current: 68A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: DFN5060-8
On-state resistance: 3.4mΩ
Mounting: SMD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; Idm: 219A; 333W; DFN5060-8
Pulsed drain current: 219A
Power dissipation: 333W
Gate charge: 85nC
Polarisation: unipolar
Drain current: 68A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: DFN5060-8
On-state resistance: 3.4mΩ
Mounting: SMD
Produkt ist nicht verfügbar
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| PSMB055N08NS1_R2_00601 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 108A
Power dissipation: 113.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 360A
Gate charge: 65.8nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 108A; Idm: 360A; 113.6W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 108A
Power dissipation: 113.6W
Case: TO263
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Pulsed drain current: 360A
Gate charge: 65.8nC
Produkt ist nicht verfügbar
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| PSMN015N10NS2_R2_00201 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 398A; Idm: 1592A; 250W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 398A
Pulsed drain current: 1592A
Power dissipation: 250W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 398A; Idm: 1592A; 250W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 398A
Pulsed drain current: 1592A
Power dissipation: 250W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 1.5mΩ
Mounting: SMD
Gate charge: 128nC
Kind of package: reel; tape
Kind of channel: enhancement
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| PSMN028N10NS2_R2_00201 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 240A; Idm: 960A; 167W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 240A
Pulsed drain current: 960A
Power dissipation: 167W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 240A; Idm: 960A; 167W; TOLL
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 240A
Pulsed drain current: 960A
Power dissipation: 167W
Case: TOLL
Gate-source voltage: ±20V
On-state resistance: 2.8mΩ
Mounting: SMD
Gate charge: 65nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| PSMP033N10NS2_T0_00601 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| PSMP055N08NS1_T0_00601 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 111A
Power dissipation: 136W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 360A
Gate charge: 65.8nC
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 111A; Idm: 360A; 136W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 111A
Power dissipation: 136W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 7mΩ
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Pulsed drain current: 360A
Gate charge: 65.8nC
auf Bestellung 79 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 34+ | 2.55 EUR |
| 57+ | 1.5 EUR |
| 63+ | 1.36 EUR |
| PSMP075N15NS1_T0_00601 |
|
Hersteller: PanJit Semiconductor
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 125A; Idm: 350A; 258.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 125A
Pulsed drain current: 350A
Power dissipation: 258.6W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 125A; Idm: 350A; 258.6W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 125A
Pulsed drain current: 350A
Power dissipation: 258.6W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 9mΩ
Mounting: THT
Gate charge: 97nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
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| PSMQC039N10NS2_R2_00201 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 89A; 125W; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 89A
Power dissipation: 125W
Case: DFN5060-8
Gate-source voltage: 20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 89A; 125W; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 89A
Power dissipation: 125W
Case: DFN5060-8
Gate-source voltage: 20V
On-state resistance: 3.5mΩ
Mounting: SMD
Gate charge: 46nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 9000 Stücke
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| PSMQC040N10NS2_R2_00601 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 122A; Idm: 488A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 122A
Pulsed drain current: 488A
Power dissipation: 125W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 122A; Idm: 488A; 125W
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 122A
Pulsed drain current: 488A
Power dissipation: 125W
Case: DFN5060-8
Gate-source voltage: ±20V
On-state resistance: 6.5mΩ
Mounting: SMD
Gate charge: 53nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| PSMQC042N10LS2_R2_00201 |
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 109A; 115W; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 109A
Power dissipation: 115W
Case: DFN5060-8
Gate-source voltage: 20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 109A; 115W; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 109A
Power dissipation: 115W
Case: DFN5060-8
Gate-source voltage: 20V
On-state resistance: 4.2mΩ
Mounting: SMD
Gate charge: 58nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 9000 Stücke
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| PSMQC060N06LS1-AU_R2_006A1 |
|
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 68A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 68A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
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