Produkte > PANJIT SEMICONDUCTOR > Alle Produkte des Herstellers PANJIT SEMICONDUCTOR (1815) > Seite 23 nach 31

Wählen Sie Seite:   [  << Vorherige Seite ]  1 3 6 9 12 15 18 19 20 21 22 23 24 25 26 27 28 30 31  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Privatkunde
PEC11SD03M1Q_R1_00501 PanJit Semiconductor Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape
Mounting: SMD
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Version: ESD
Max. off-state voltage: 3V
Kind of package: reel; tape
Semiconductor structure: bidirectional
Leakage current: 1µA
Case: DFN1006-2
Capacitance: 0.19pF
Type of diode: TVS
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PEC1605M1Q-AU_R1_005A1 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 6.8V; 2A; bidirectional; DFN1006-2; Ch: 1
Mounting: SMD
Breakdown voltage: 6.8V
Max. forward impulse current: 2A
Application: automotive industry
Max. off-state voltage: 5V
Semiconductor structure: bidirectional
Leakage current: 75nA
Case: DFN1006-2
Capacitance: 0.6pF
Type of diode: TVS
Number of channels: 1
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PEC1605M1Q_R1_00001 PEC1605M1Q_R1_00001 PanJit Semiconductor PEC1605M1Q.pdf Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape
Mounting: SMD
Capacitance: 0.6pF
Semiconductor structure: bidirectional
Case: DFN1006-2
Version: ESD
Kind of package: reel; tape
Type of diode: TVS
Leakage current: 75nA
Max. off-state voltage: 5.5V
Breakdown voltage: 6.8...11.2V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PEC3205C2C_R1_00701 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 5A; bidirectional; SOT323; Ch: 2
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Number of channels: 2
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Semiconductor structure: bidirectional
Case: SOT323
Mounting: SMD
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PEC3205C2E_R1_00701 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 5A; bidirectional; SOT523; Ch: 2
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Number of channels: 2
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Semiconductor structure: bidirectional
Case: SOT523
Mounting: SMD
Produkt ist nicht verfügbar
 Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PEC3205CS_R1_00701 PEC3205CS_R1_00701 PanJit Semiconductor PEC3205CS Category: Protection diodes - arrays
Description: Diode: TVS; 8V; 5A; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Breakdown voltage: 8V
Max. forward impulse current: 5A
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 5V
Leakage current: 0.5µA
Number of channels: 1
Capacitance: 20pF
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PEC3205ES-AU_R1_007A1 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 5A; bidirectional; SOD523; Ch: 1
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Number of channels: 1
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Application: automotive industry
Semiconductor structure: bidirectional
Case: SOD523
Mounting: SMD
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PEC3205ES_R1_00701 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 5A; bidirectional; SOD523; Ch: 1
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Number of channels: 1
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Semiconductor structure: bidirectional
Case: SOD523
Mounting: SMD
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PEC3205M1Q_R1_00201 PanJit Semiconductor PEC3202M1Q Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 5.5÷8V; bidirectional; DFN1006-2; reel,tape
Kind of package: reel; tape
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Max. off-state voltage: 5V
Breakdown voltage: 5.5...8V
Semiconductor structure: bidirectional
Case: DFN1006-2
Version: ESD
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PEC3205S1Q_R1_00001 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 5A; bidirectional; DFN0603-2; Ch: 1
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Number of channels: 1
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Semiconductor structure: bidirectional
Case: DFN0603-2
Mounting: SMD
Produkt ist nicht verfügbar
 Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PEC33712C2A-AU_R1_000A1 PEC33712C2A-AU_R1_000A1 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 13.3V; 5A; bidirectional; SOT23; Ch: 2
Mounting: SMD
Application: automotive industry
Max. off-state voltage: 12V
Semiconductor structure: bidirectional
Leakage current: 1µA
Case: SOT23
Type of diode: TVS
Number of channels: 2
Breakdown voltage: 13.3V
Max. forward impulse current: 5A
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PEC33712C2A_R1_00001 PEC33712C2A_R1_00001 PanJit Semiconductor PEC33712C2A.pdf Category: Protection diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 8A; asymmetric,bidirectional; ESD
Mounting: SMD
Capacitance: 35pF
Max. off-state voltage: 7...12V
Kind of package: reel; tape
Semiconductor structure: asymmetric; bidirectional
Leakage current: 1µA
Case: SOT23
Type of diode: TVS array
Number of channels: 2
Breakdown voltage: 7.5...13.3V
Max. forward impulse current: 8A
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PEC3827CS-AU_R1_007A1 PEC3827CS-AU_R1_007A1 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 28V; 3A; bidirectional; SOD323; Ch: 1
Mounting: SMD
Case: SOD323
Application: automotive industry
Max. off-state voltage: 27V
Semiconductor structure: bidirectional
Leakage current: 50nA
Capacitance: 18pF
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 28V
Max. forward impulse current: 3A
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PEC4105C2A_R1_00501 PanJit Semiconductor Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 20A; bidirectional; SOT23; Ch: 2
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Max. forward impulse current: 20A
Semiconductor structure: bidirectional
Case: SOT23
Mounting: SMD
Leakage current: 0.5µA
Capacitance: 80pF
Number of channels: 2
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PEC4105CS_R1_00701 PanJit Semiconductor PEC4102CS_SERIES.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 20A; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Max. forward impulse current: 20A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 0.5µA
Capacitance: 80pF
Number of channels: 1
Produkt ist nicht verfügbar
 Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PG4007-AU_R2_100A1 PG4007-AU_R2_100A1 PanJit Semiconductor Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V; Ir: 50uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Leakage current: 50µA
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJ30072S6_R1_00301 PanJit Semiconductor PJ30072.pdf Category: Voltage regulators - DC/DC circuits
Description: Converter: DC/DC; Uin: 750mVDC÷5.5VDC; SOT23-6
Input voltage: 750mV DC...5.5V DC
Output current: 0.75A
Case: SOT23-6
Operating temperature: -40...85°C
Type of converter: DC/DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJ4L40W6_R1_00001 PanJit Semiconductor PJ4L40W6.pdf Category: Protection diodes - arrays
Description: Diode: TVS; 30V; quadruple; SOT23-6L; Ch: 4
Type of diode: TVS
Breakdown voltage: 30V
Semiconductor structure: quadruple
Mounting: SMD
Case: SOT23-6L
Max. off-state voltage: 30V
Leakage current: 2µA
Number of channels: 4
Capacitance: 19pF
Produkt ist nicht verfügbar
 Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA138K-AU_R1_000A1 PJA138K-AU_R1_000A1 PanJit Semiconductor PJA138K-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 1614 Stücke:
Lieferzeit 14-21 Tag (e)
313+0.27 EUR
794+0.11 EUR
1119+0.076 EUR
1471+0.058 EUR
1614+0.052 EUR
Mindestbestellmenge: 313 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA3400-AU_R1_000A1 PJA3400-AU_R1_000A1 PanJit Semiconductor Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; SOT23-6
Mounting: SMD
Drain current: -2A
Kind of channel: enhancement
Drain-source voltage: -20V
Application: automotive industry
Type of transistor: P-MOSFET
Gate-source voltage: 12V
Kind of package: reel; tape
Case: SOT23-6
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJA3400_R1_00001 PJA3400_R1_00001 PanJit Semiconductor PJA3400.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23
Mounting: SMD
Drain current: 4.9A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 60mΩ
Pulsed drain current: 19.6A
Power dissipation: 1.25W
Gate charge: 5.7nC
Polarisation: unipolar
auf Bestellung 1070 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.46 EUR
302+0.29 EUR
486+0.18 EUR
667+0.13 EUR
1000+0.11 EUR
Mindestbestellmenge: 186 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA3401A_R1_00001 PJA3401A_R1_00001 PanJit Semiconductor PJA3401A.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Pulsed drain current: -14.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1783 Stücke:
Lieferzeit 14-21 Tag (e)
228+0.37 EUR
286+0.3 EUR
511+0.17 EUR
792+0.11 EUR
1000+0.092 EUR
Mindestbestellmenge: 228 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA3402_R1_00501 PJA3402_R1_00501 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Mounting: SMD
Pulsed drain current: 17.6A
Power dissipation: 1.25W
Gate charge: 11.3nC
Polarisation: unipolar
Drain current: 4.4A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 92mΩ
auf Bestellung 9005 Stücke:
Lieferzeit 14-21 Tag (e)
455+0.19 EUR
618+0.14 EUR
826+0.1 EUR
916+0.093 EUR
991+0.086 EUR
1038+0.082 EUR
3000+0.074 EUR
9000+0.073 EUR
Mindestbestellmenge: 455 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA3403_R1_00001 PJA3403_R1_00001 PanJit Semiconductor PJA3403.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.1A; Idm: -12.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.1A
Pulsed drain current: -12.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.165Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 688 Stücke:
Lieferzeit 14-21 Tag (e)
239+0.36 EUR
350+0.24 EUR
601+0.14 EUR
688+0.12 EUR
Mindestbestellmenge: 239 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA3404_R1_00501 PJA3404_R1_00501 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 22A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.6A
Pulsed drain current: 22A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 7.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2839 Stücke:
Lieferzeit 14-21 Tag (e)
139+0.61 EUR
207+0.42 EUR
459+0.19 EUR
500+0.17 EUR
569+0.15 EUR
1000+0.13 EUR
Mindestbestellmenge: 139 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA3406-AU_R1_000A1 PJA3406-AU_R1_000A1 PanJit Semiconductor Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 1.6A; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.6A
Case: SOT23-6
Gate-source voltage: 8V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJA3406_R1_00001 PJA3406_R1_00001 PanJit Semiconductor PJA3406.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.4A
Case: SOT23
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 1.25W
Gate charge: 5.8nC
On-state resistance: 70mΩ
Pulsed drain current: 17.6A
auf Bestellung 2460 Stücke:
Lieferzeit 14-21 Tag (e)
239+0.36 EUR
360+0.24 EUR
674+0.13 EUR
905+0.094 EUR
1000+0.087 EUR
Mindestbestellmenge: 239 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA3407E_R1_00501 PJA3407E_R1_00501 PanJit Semiconductor Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 360mA; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.36A
Case: SOT363
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJA3407_R1_00001 PJA3407_R1_00001 PanJit Semiconductor PJA3407.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.8A
Pulsed drain current: -15.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2364 Stücke:
Lieferzeit 14-21 Tag (e)
152+0.56 EUR
243+0.35 EUR
391+0.21 EUR
527+0.17 EUR
1000+0.14 EUR
Mindestbestellmenge: 152 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA3409_R1_00001 PJA3409_R1_00001 PanJit Semiconductor PJA3409.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -11.6A; 1.25W
Mounting: SMD
Pulsed drain current: -11.6A
Power dissipation: 1.25W
Gate charge: 9.8nC
Polarisation: unipolar
Drain current: -2.9A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 0.15Ω
auf Bestellung 2379 Stücke:
Lieferzeit 14-21 Tag (e)
186+0.46 EUR
300+0.29 EUR
469+0.18 EUR
619+0.14 EUR
1000+0.12 EUR
Mindestbestellmenge: 186 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA3413_R1_00001 PJA3413_R1_00001 PanJit Semiconductor PJA3413.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -13.6A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.4A
Pulsed drain current: -13.6A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 146mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2353 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.44 EUR
388+0.21 EUR
587+0.14 EUR
774+0.11 EUR
1000+0.098 EUR
Mindestbestellmenge: 193 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA3415A-AU_R1_000A1 PJA3415A-AU_R1_000A1 PanJit Semiconductor PJA3415A-AU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -18A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 88mΩ
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Kind of package: reel; tape
Pulsed drain current: -18A
Gate charge: 10nC
auf Bestellung 29798 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.43 EUR
271+0.31 EUR
511+0.17 EUR
569+0.15 EUR
610+0.14 EUR
1000+0.13 EUR
3000+0.12 EUR
9000+0.12 EUR
Mindestbestellmenge: 200 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA3416AE_R1_00001 PJA3416AE_R1_00001 PanJit Semiconductor PJA3416AE.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; Idm: 32A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Pulsed drain current: 32A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 34mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 8.6nC
auf Bestellung 141 Stücke:
Lieferzeit 14-21 Tag (e)
141+0.6 EUR
Mindestbestellmenge: 141 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA3428_R1_00001 PJA3428_R1_00001 PanJit Semiconductor PJA3428.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.3A
Pulsed drain current: 0.6A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.9nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 7290 Stücke:
Lieferzeit 14-21 Tag (e)
209+0.4 EUR
348+0.25 EUR
557+0.15 EUR
752+0.11 EUR
1000+0.1 EUR
3000+0.084 EUR
6000+0.076 EUR
Mindestbestellmenge: 209 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA3433_R1_00001 PJA3433_R1_00001 PanJit Semiconductor PJA3433.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.1A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.97Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: -4.4A
Gate charge: 1.6nC
auf Bestellung 1973 Stücke:
Lieferzeit 14-21 Tag (e)
228+0.37 EUR
496+0.17 EUR
625+0.13 EUR
837+0.1 EUR
1000+0.092 EUR
Mindestbestellmenge: 228 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA3434_R1_00001 PJA3434_R1_00001 PanJit Semiconductor PJA3434.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.75A
Pulsed drain current: 1.5A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3740 Stücke:
Lieferzeit 14-21 Tag (e)
295+0.29 EUR
463+0.18 EUR
792+0.11 EUR
1117+0.076 EUR
1205+0.07 EUR
Mindestbestellmenge: 295 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA3435_R1_00001 PJA3435_R1_00001 PanJit Semiconductor PJA3435.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.5A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 6Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: -1A
Gate charge: 1.4nC
auf Bestellung 5950 Stücke:
Lieferzeit 14-21 Tag (e)
193+0.44 EUR
323+0.26 EUR
500+0.17 EUR
666+0.13 EUR
1000+0.11 EUR
3000+0.094 EUR
Mindestbestellmenge: 193 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA3436-AU_R1_000A1 PJA3436-AU_R1_000A1 PanJit Semiconductor PJA3436-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.2A
Pulsed drain current: 4.8A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 0.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 2978 Stücke:
Lieferzeit 14-21 Tag (e)
200+0.43 EUR
336+0.25 EUR
542+0.15 EUR
738+0.12 EUR
1000+0.1 EUR
Mindestbestellmenge: 200 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA3438-AU_R1_000A1 PJA3438-AU_R1_000A1 PanJit Semiconductor PJA3438-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 0.95nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
179+0.48 EUR
275+0.31 EUR
439+0.19 EUR
500+0.17 EUR
Mindestbestellmenge: 179 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA3441-AU_R1_000A1 PJA3441-AU_R1_000A1 PanJit Semiconductor PJA3441-AU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3.1A; Idm: -12.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3.1A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 108mΩ
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Kind of package: reel; tape
Pulsed drain current: -12.4A
Gate charge: 6nC
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
10+8.51 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA3461-AU_R1_000A1 PJA3461-AU_R1_000A1 PanJit Semiconductor PJA3461-AU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; Idm: -7.6A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.9A
Pulsed drain current: -7.6A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.22Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJA3463_R1_00001 PJA3463_R1_00001 PanJit Semiconductor PJA3463.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.5A; Idm: -10A; 1.25W; SOT23
Mounting: SMD
Pulsed drain current: -10A
Power dissipation: 1.25W
Gate charge: 10nC
Polarisation: unipolar
Drain current: -2.5A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 0.13Ω
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJA3471_R1_00501 PJA3471_R1_00501 PanJit Semiconductor Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -900mA; Idm: -3.6A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -900mA
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: -3.6A
Gate charge: 8nC
auf Bestellung 20425 Stücke:
Lieferzeit 14-21 Tag (e)
148+0.58 EUR
260+0.33 EUR
410+0.2 EUR
496+0.17 EUR
569+0.15 EUR
1000+0.14 EUR
3000+0.13 EUR
Mindestbestellmenge: 148 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJB100N04S-AU_R2_002A1 PanJit Semiconductor PJB100N04S-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 161A; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 161A
Case: TO263
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
 Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJB100N04V-AU_R2_002A1 PanJit Semiconductor PJB100N04V-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 219A; TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 219A
Case: TO263AB
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
 Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJB120N03S-AU_R2_002A1 PanJit Semiconductor PJB120N03S-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 76A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 76A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
 Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJB120N04S-AU_R2_002A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 58A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 58A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
 Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJB120N04V-AU_R2_002A1 PanJit Semiconductor PJB120N04V-AU.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 166A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 166A
Case: TO220AB
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
 Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJB140P04E7-AU_R2_002A1 PanJit Semiconductor Category: SMD P channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; DFN3333-8
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 22A
Drain-source voltage: 100V
Gate-source voltage: 20V
Application: automotive industry
Kind of package: reel; tape
Case: DFN3333-8
Produkt ist nicht verfügbar
 Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJC7400_R1_00001 PJC7400_R1_00001 PanJit Semiconductor PJC7400.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.9A; Idm: 7.6A; 350mW; SOT323
Mounting: SMD
Case: SOT323
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 7.6A
Drain current: 1.9A
Gate charge: 4.8nC
On-state resistance: 0.11Ω
Power dissipation: 0.35W
Gate-source voltage: ±12V
auf Bestellung 5345 Stücke:
Lieferzeit 14-21 Tag (e)
556+0.15 EUR
667+0.13 EUR
705+0.12 EUR
782+0.11 EUR
Mindestbestellmenge: 556 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJC7401_R1_00001 PJC7401_R1_00001 PanJit Semiconductor PJC7401.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; Idm: -6A; 350mW; SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2075 Stücke:
Lieferzeit 14-21 Tag (e)
139+0.61 EUR
228+0.37 EUR
355+0.24 EUR
417+0.2 EUR
500+0.18 EUR
1000+0.17 EUR
Mindestbestellmenge: 139 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJC7404_R1_00001 PJC7404_R1_00001 PanJit Semiconductor PJC7404.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT323
Mounting: SMD
Pulsed drain current: 4A
Power dissipation: 0.35W
Gate charge: 1.6nC
Polarisation: unipolar
Drain current: 1A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: SOT323
On-state resistance: 0.4Ω
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJC7406_R1_00001 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJC7407_R1_00001 PJC7407_R1_00001 PanJit Semiconductor PJC7407.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; Idm: -5.2A; 350mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.3A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: -5.2A
Gate charge: 5.4nC
auf Bestellung 6105 Stücke:
Lieferzeit 14-21 Tag (e)
417+0.2 EUR
603+0.14 EUR
650+0.13 EUR
705+0.12 EUR
1000+0.11 EUR
3000+0.098 EUR
Mindestbestellmenge: 417 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJC7409_R1_00001 PanJit Semiconductor PJC7409.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 39A; DFN5060-8
Mounting: SMD
Polarisation: unipolar
Drain current: 39A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: DFN5060-8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJC7410_R1_00001 PanJit Semiconductor PJC7410.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 38A; DFN5060-8
Mounting: SMD
Polarisation: unipolar
Drain current: 38A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: DFN5060-8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJC7428_R1_00001 PJC7428_R1_00001 PanJit Semiconductor PJC7428.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 350mW; SOT323
Mounting: SMD
Pulsed drain current: 0.6A
Power dissipation: 0.35W
Gate charge: 0.9nC
Polarisation: unipolar
Drain current: 0.3A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±10V
Kind of package: reel; tape
Case: SOT323
On-state resistance: 4Ω
auf Bestellung 2750 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.31 EUR
463+0.18 EUR
734+0.12 EUR
872+0.098 EUR
991+0.086 EUR
Mindestbestellmenge: 278 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJC7438-AU_R1_000A1 PanJit Semiconductor Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 63.8A; DFN3333-8
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: 20V
Drain current: 63.8A
Drain-source voltage: 80V
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJC7438_R1_00001 PanJit Semiconductor PJC7438.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 55A; DFN3333-8
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: 20V
Drain current: 55A
Drain-source voltage: 80V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJC7439-AU_R1_000A1 PJC7439-AU_R1_000A1 PanJit Semiconductor PJC7439-AU.pdf Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -250mA; Idm: -1A; 350mW
Mounting: SMD
Case: SOT323
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1A
Drain current: -0.25A
Gate charge: 1.1nC
On-state resistance: 13Ω
Power dissipation: 0.35W
Gate-source voltage: ±20V
Application: automotive industry
auf Bestellung 2875 Stücke:
Lieferzeit 14-21 Tag (e)
278+0.31 EUR
451+0.19 EUR
729+0.12 EUR
1000+0.086 EUR
1147+0.074 EUR
Mindestbestellmenge: 278 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PEC11SD03M1Q_R1_00501
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 5.5V; 3.5A; bidirectional; DFN1006-2; reel,tape
Mounting: SMD
Breakdown voltage: 5.5V
Max. forward impulse current: 3.5A
Version: ESD
Max. off-state voltage: 3V
Kind of package: reel; tape
Semiconductor structure: bidirectional
Leakage current: 1µA
Case: DFN1006-2
Capacitance: 0.19pF
Type of diode: TVS
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PEC1605M1Q-AU_R1_005A1
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 6.8V; 2A; bidirectional; DFN1006-2; Ch: 1
Mounting: SMD
Breakdown voltage: 6.8V
Max. forward impulse current: 2A
Application: automotive industry
Max. off-state voltage: 5V
Semiconductor structure: bidirectional
Leakage current: 75nA
Case: DFN1006-2
Capacitance: 0.6pF
Type of diode: TVS
Number of channels: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PEC1605M1Q_R1_00001 PEC1605M1Q.pdf
PEC1605M1Q_R1_00001
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 6.8÷11.2V; bidirectional; DFN1006-2; reel,tape
Mounting: SMD
Capacitance: 0.6pF
Semiconductor structure: bidirectional
Case: DFN1006-2
Version: ESD
Kind of package: reel; tape
Type of diode: TVS
Leakage current: 75nA
Max. off-state voltage: 5.5V
Breakdown voltage: 6.8...11.2V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PEC3205C2C_R1_00701
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 5A; bidirectional; SOT323; Ch: 2
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Number of channels: 2
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Semiconductor structure: bidirectional
Case: SOT323
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PEC3205C2E_R1_00701
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 5A; bidirectional; SOT523; Ch: 2
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Number of channels: 2
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Semiconductor structure: bidirectional
Case: SOT523
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PEC3205CS_R1_00701 PEC3205CS
PEC3205CS_R1_00701
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 8V; 5A; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Breakdown voltage: 8V
Max. forward impulse current: 5A
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOD323
Max. off-state voltage: 5V
Leakage current: 0.5µA
Number of channels: 1
Capacitance: 20pF
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PEC3205ES-AU_R1_007A1
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 5A; bidirectional; SOD523; Ch: 1
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Number of channels: 1
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Application: automotive industry
Semiconductor structure: bidirectional
Case: SOD523
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PEC3205ES_R1_00701
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 5A; bidirectional; SOD523; Ch: 1
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Number of channels: 1
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Semiconductor structure: bidirectional
Case: SOD523
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PEC3205M1Q_R1_00201 PEC3202M1Q
Hersteller: PanJit Semiconductor
Category: Bidirectional TVS SMD diodes
Description: Diode: TVS; ESD; 5.5÷8V; bidirectional; DFN1006-2; reel,tape
Kind of package: reel; tape
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Max. off-state voltage: 5V
Breakdown voltage: 5.5...8V
Semiconductor structure: bidirectional
Case: DFN1006-2
Version: ESD
Mounting: SMD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PEC3205S1Q_R1_00001
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 5A; bidirectional; DFN0603-2; Ch: 1
Type of diode: TVS
Capacitance: 20pF
Leakage current: 0.5µA
Number of channels: 1
Max. forward impulse current: 5A
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Semiconductor structure: bidirectional
Case: DFN0603-2
Mounting: SMD
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PEC33712C2A-AU_R1_000A1
PEC33712C2A-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 13.3V; 5A; bidirectional; SOT23; Ch: 2
Mounting: SMD
Application: automotive industry
Max. off-state voltage: 12V
Semiconductor structure: bidirectional
Leakage current: 1µA
Case: SOT23
Type of diode: TVS
Number of channels: 2
Breakdown voltage: 13.3V
Max. forward impulse current: 5A
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PEC33712C2A_R1_00001 PEC33712C2A.pdf
PEC33712C2A_R1_00001
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS array; 7.5÷13.3V; 8A; asymmetric,bidirectional; ESD
Mounting: SMD
Capacitance: 35pF
Max. off-state voltage: 7...12V
Kind of package: reel; tape
Semiconductor structure: asymmetric; bidirectional
Leakage current: 1µA
Case: SOT23
Type of diode: TVS array
Number of channels: 2
Breakdown voltage: 7.5...13.3V
Max. forward impulse current: 8A
Version: ESD
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PEC3827CS-AU_R1_007A1
PEC3827CS-AU_R1_007A1
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 28V; 3A; bidirectional; SOD323; Ch: 1
Mounting: SMD
Case: SOD323
Application: automotive industry
Max. off-state voltage: 27V
Semiconductor structure: bidirectional
Leakage current: 50nA
Capacitance: 18pF
Type of diode: TVS
Number of channels: 1
Breakdown voltage: 28V
Max. forward impulse current: 3A
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PEC4105C2A_R1_00501
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 20A; bidirectional; SOT23; Ch: 2
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Max. forward impulse current: 20A
Semiconductor structure: bidirectional
Case: SOT23
Mounting: SMD
Leakage current: 0.5µA
Capacitance: 80pF
Number of channels: 2
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PEC4105CS_R1_00701 PEC4102CS_SERIES.pdf
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 5.5V; 20A; bidirectional; SOD323; Ch: 1
Type of diode: TVS
Max. off-state voltage: 5V
Breakdown voltage: 5.5V
Max. forward impulse current: 20A
Semiconductor structure: bidirectional
Case: SOD323
Mounting: SMD
Leakage current: 0.5µA
Capacitance: 80pF
Number of channels: 1
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PG4007-AU_R2_100A1
PG4007-AU_R2_100A1
Hersteller: PanJit Semiconductor
Category: THT universal diodes
Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 30A; DO41; Ufmax: 1.1V; Ir: 50uA
Type of diode: rectifying
Mounting: THT
Max. off-state voltage: 1kV
Load current: 1A
Semiconductor structure: single diode
Features of semiconductor devices: glass passivated
Max. forward impulse current: 30A
Case: DO41
Max. forward voltage: 1.1V
Leakage current: 50µA
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJ30072S6_R1_00301 PJ30072.pdf
Hersteller: PanJit Semiconductor
Category: Voltage regulators - DC/DC circuits
Description: Converter: DC/DC; Uin: 750mVDC÷5.5VDC; SOT23-6
Input voltage: 750mV DC...5.5V DC
Output current: 0.75A
Case: SOT23-6
Operating temperature: -40...85°C
Type of converter: DC/DC
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJ4L40W6_R1_00001 PJ4L40W6.pdf
Hersteller: PanJit Semiconductor
Category: Protection diodes - arrays
Description: Diode: TVS; 30V; quadruple; SOT23-6L; Ch: 4
Type of diode: TVS
Breakdown voltage: 30V
Semiconductor structure: quadruple
Mounting: SMD
Case: SOT23-6L
Max. off-state voltage: 30V
Leakage current: 2µA
Number of channels: 4
Capacitance: 19pF
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA138K-AU_R1_000A1 PJA138K-AU.pdf
PJA138K-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 1614 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
313+0.27 EUR
794+0.11 EUR
1119+0.076 EUR
1471+0.058 EUR
1614+0.052 EUR
Mindestbestellmenge: 313 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA3400-AU_R1_000A1
PJA3400-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -2A; SOT23-6
Mounting: SMD
Drain current: -2A
Kind of channel: enhancement
Drain-source voltage: -20V
Application: automotive industry
Type of transistor: P-MOSFET
Gate-source voltage: 12V
Kind of package: reel; tape
Case: SOT23-6
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJA3400_R1_00001 PJA3400.pdf
PJA3400_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.9A; Idm: 19.6A; 1.25W; SOT23
Mounting: SMD
Drain current: 4.9A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 60mΩ
Pulsed drain current: 19.6A
Power dissipation: 1.25W
Gate charge: 5.7nC
Polarisation: unipolar
auf Bestellung 1070 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
186+0.46 EUR
302+0.29 EUR
486+0.18 EUR
667+0.13 EUR
1000+0.11 EUR
Mindestbestellmenge: 186 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA3401A_R1_00001 PJA3401A.pdf
PJA3401A_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.6A; Idm: -14.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.6A
Pulsed drain current: -14.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 86mΩ
Mounting: SMD
Gate charge: 19nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 1783 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
228+0.37 EUR
286+0.3 EUR
511+0.17 EUR
792+0.11 EUR
1000+0.092 EUR
Mindestbestellmenge: 228 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA3402_R1_00501
PJA3402_R1_00501
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Mounting: SMD
Pulsed drain current: 17.6A
Power dissipation: 1.25W
Gate charge: 11.3nC
Polarisation: unipolar
Drain current: 4.4A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 92mΩ
auf Bestellung 9005 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
455+0.19 EUR
618+0.14 EUR
826+0.1 EUR
916+0.093 EUR
991+0.086 EUR
1038+0.082 EUR
3000+0.074 EUR
9000+0.073 EUR
Mindestbestellmenge: 455 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA3403_R1_00001 PJA3403.pdf
PJA3403_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.1A; Idm: -12.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.1A
Pulsed drain current: -12.4A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.165Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 688 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
239+0.36 EUR
350+0.24 EUR
601+0.14 EUR
688+0.12 EUR
Mindestbestellmenge: 239 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA3404_R1_00501
PJA3404_R1_00501
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 5.6A; Idm: 22A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 5.6A
Pulsed drain current: 22A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 45mΩ
Mounting: SMD
Gate charge: 7.8nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2839 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
139+0.61 EUR
207+0.42 EUR
459+0.19 EUR
500+0.17 EUR
569+0.15 EUR
1000+0.13 EUR
Mindestbestellmenge: 139 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA3406-AU_R1_000A1
PJA3406-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 30V; 1.6A; SOT23-6
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 1.6A
Case: SOT23-6
Gate-source voltage: 8V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJA3406_R1_00001 PJA3406.pdf
PJA3406_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 4.4A; Idm: 17.6A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 4.4A
Case: SOT23
Gate-source voltage: ±20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Power dissipation: 1.25W
Gate charge: 5.8nC
On-state resistance: 70mΩ
Pulsed drain current: 17.6A
auf Bestellung 2460 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
239+0.36 EUR
360+0.24 EUR
674+0.13 EUR
905+0.094 EUR
1000+0.087 EUR
Mindestbestellmenge: 239 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA3407E_R1_00501
PJA3407E_R1_00501
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 360mA; SOT363
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.36A
Case: SOT363
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJA3407_R1_00001 PJA3407.pdf
PJA3407_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -3.8A; Idm: -15.2A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -3.8A
Pulsed drain current: -15.2A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 80mΩ
Mounting: SMD
Gate charge: 12nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2364 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
152+0.56 EUR
243+0.35 EUR
391+0.21 EUR
527+0.17 EUR
1000+0.14 EUR
Mindestbestellmenge: 152 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA3409_R1_00001 PJA3409.pdf
PJA3409_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -2.9A; Idm: -11.6A; 1.25W
Mounting: SMD
Pulsed drain current: -11.6A
Power dissipation: 1.25W
Gate charge: 9.8nC
Polarisation: unipolar
Drain current: -2.9A
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 0.15Ω
auf Bestellung 2379 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
186+0.46 EUR
300+0.29 EUR
469+0.18 EUR
619+0.14 EUR
1000+0.12 EUR
Mindestbestellmenge: 186 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA3413_R1_00001 PJA3413.pdf
PJA3413_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -3.4A; Idm: -13.6A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -3.4A
Pulsed drain current: -13.6A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 146mΩ
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2353 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
193+0.44 EUR
388+0.21 EUR
587+0.14 EUR
774+0.11 EUR
1000+0.098 EUR
Mindestbestellmenge: 193 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA3415A-AU_R1_000A1 PJA3415A-AU.pdf
PJA3415A-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -4.5A; Idm: -18A; 1.25W; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -4.5A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 88mΩ
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Kind of package: reel; tape
Pulsed drain current: -18A
Gate charge: 10nC
auf Bestellung 29798 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
200+0.43 EUR
271+0.31 EUR
511+0.17 EUR
569+0.15 EUR
610+0.14 EUR
1000+0.13 EUR
3000+0.12 EUR
9000+0.12 EUR
Mindestbestellmenge: 200 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA3416AE_R1_00001 PJA3416AE.pdf
PJA3416AE_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 6.5A; Idm: 32A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 6.5A
Pulsed drain current: 32A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 34mΩ
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Gate charge: 8.6nC
auf Bestellung 141 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
141+0.6 EUR
Mindestbestellmenge: 141 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA3428_R1_00001 PJA3428.pdf
PJA3428_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Drain current: 0.3A
Pulsed drain current: 0.6A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 4Ω
Mounting: SMD
Gate charge: 0.9nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 7290 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
209+0.4 EUR
348+0.25 EUR
557+0.15 EUR
752+0.11 EUR
1000+0.1 EUR
3000+0.084 EUR
6000+0.076 EUR
Mindestbestellmenge: 209 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA3433_R1_00001 PJA3433.pdf
PJA3433_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.1A; Idm: -4.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.1A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±8V
On-state resistance: 0.97Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: -4.4A
Gate charge: 1.6nC
auf Bestellung 1973 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
228+0.37 EUR
496+0.17 EUR
625+0.13 EUR
837+0.1 EUR
1000+0.092 EUR
Mindestbestellmenge: 228 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA3434_R1_00001 PJA3434.pdf
PJA3434_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 750mA; Idm: 1.5A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.75A
Pulsed drain current: 1.5A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 3Ω
Mounting: SMD
Gate charge: 1.4nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 3740 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
295+0.29 EUR
463+0.18 EUR
792+0.11 EUR
1117+0.076 EUR
1205+0.07 EUR
Mindestbestellmenge: 295 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA3435_R1_00001 PJA3435.pdf
PJA3435_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -500mA; Idm: -1A; 500mW; SOT23
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -0.5A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±10V
On-state resistance: 6Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: -1A
Gate charge: 1.4nC
auf Bestellung 5950 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
193+0.44 EUR
323+0.26 EUR
500+0.17 EUR
666+0.13 EUR
1000+0.11 EUR
3000+0.094 EUR
Mindestbestellmenge: 193 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA3436-AU_R1_000A1 PJA3436-AU.pdf
PJA3436-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1.2A; Idm: 4.8A; 1.25W; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1.2A
Pulsed drain current: 4.8A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±12V
On-state resistance: 0.9Ω
Mounting: SMD
Gate charge: 0.9nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 2978 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
200+0.43 EUR
336+0.25 EUR
542+0.15 EUR
738+0.12 EUR
1000+0.1 EUR
Mindestbestellmenge: 200 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA3438-AU_R1_000A1 PJA3438-AU.pdf
PJA3438-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 50V; 500mA; Idm: 1.2A; 500mW; SOT23
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.5A
Pulsed drain current: 1.2A
Power dissipation: 0.5W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 6Ω
Mounting: SMD
Gate charge: 0.95nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
auf Bestellung 500 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
179+0.48 EUR
275+0.31 EUR
439+0.19 EUR
500+0.17 EUR
Mindestbestellmenge: 179 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA3441-AU_R1_000A1 PJA3441-AU.pdf
PJA3441-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -40V; -3.1A; Idm: -12.4A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -40V
Drain current: -3.1A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 108mΩ
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Kind of package: reel; tape
Pulsed drain current: -12.4A
Gate charge: 6nC
auf Bestellung 10 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
10+8.51 EUR
Mindestbestellmenge: 10 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJA3461-AU_R1_000A1 PJA3461-AU.pdf
PJA3461-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -1.9A; Idm: -7.6A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Drain current: -1.9A
Pulsed drain current: -7.6A
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.22Ω
Mounting: SMD
Gate charge: 8.3nC
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJA3463_R1_00001 PJA3463.pdf
PJA3463_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -2.5A; Idm: -10A; 1.25W; SOT23
Mounting: SMD
Pulsed drain current: -10A
Power dissipation: 1.25W
Gate charge: 10nC
Polarisation: unipolar
Drain current: -2.5A
Kind of channel: enhancement
Drain-source voltage: -60V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: SOT23
On-state resistance: 0.13Ω
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJA3471_R1_00501
PJA3471_R1_00501
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -900mA; Idm: -3.6A; 1.25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -900mA
Power dissipation: 1.25W
Case: SOT23
Gate-source voltage: ±20V
On-state resistance: 0.7Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: -3.6A
Gate charge: 8nC
auf Bestellung 20425 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
148+0.58 EUR
260+0.33 EUR
410+0.2 EUR
496+0.17 EUR
569+0.15 EUR
1000+0.14 EUR
3000+0.13 EUR
Mindestbestellmenge: 148 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJB100N04S-AU_R2_002A1 PJB100N04S-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 161A; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 161A
Case: TO263
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJB100N04V-AU_R2_002A1 PJB100N04V-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 219A; TO263AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 219A
Case: TO263AB
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJB120N03S-AU_R2_002A1 PJB120N03S-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 76A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 76A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of channel: enhancement
Application: automotive industry
Kind of package: reel; tape
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJB120N04S-AU_R2_002A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 58A; TO252AA
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 58A
Case: TO252AA
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJB120N04V-AU_R2_002A1 PJB120N04V-AU.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 166A; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 80V
Drain current: 166A
Case: TO220AB
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Application: automotive industry
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJB140P04E7-AU_R2_002A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 22A; DFN3333-8
Mounting: SMD
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain current: 22A
Drain-source voltage: 100V
Gate-source voltage: 20V
Application: automotive industry
Kind of package: reel; tape
Case: DFN3333-8
Produkt ist nicht verfügbar
Mindestbestellmenge: 8000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJC7400_R1_00001 PJC7400.pdf
PJC7400_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 1.9A; Idm: 7.6A; 350mW; SOT323
Mounting: SMD
Case: SOT323
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 30V
Pulsed drain current: 7.6A
Drain current: 1.9A
Gate charge: 4.8nC
On-state resistance: 0.11Ω
Power dissipation: 0.35W
Gate-source voltage: ±12V
auf Bestellung 5345 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
556+0.15 EUR
667+0.13 EUR
705+0.12 EUR
782+0.11 EUR
Mindestbestellmenge: 556 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJC7401_R1_00001 PJC7401.pdf
PJC7401_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -1.5A; Idm: -6A; 350mW; SOT323
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -30V
Drain current: -1.5A
Pulsed drain current: -6A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.18Ω
Mounting: SMD
Gate charge: 11nC
Kind of package: reel; tape
Kind of channel: enhancement
auf Bestellung 2075 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
139+0.61 EUR
228+0.37 EUR
355+0.24 EUR
417+0.2 EUR
500+0.18 EUR
1000+0.17 EUR
Mindestbestellmenge: 139 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJC7404_R1_00001 PJC7404.pdf
PJC7404_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 4A; 350mW; SOT323
Mounting: SMD
Pulsed drain current: 4A
Power dissipation: 0.35W
Gate charge: 1.6nC
Polarisation: unipolar
Drain current: 1A
Kind of channel: enhancement
Drain-source voltage: 20V
Type of transistor: N-MOSFET
Gate-source voltage: ±8V
Kind of package: reel; tape
Case: SOT323
On-state resistance: 0.4Ω
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJC7406_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 60A; DFN5060-8
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 60A
Case: DFN5060-8
Gate-source voltage: 20V
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJC7407_R1_00001 PJC7407.pdf
PJC7407_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.3A; Idm: -5.2A; 350mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.3A
Power dissipation: 0.35W
Case: SOT323
Gate-source voltage: ±12V
On-state resistance: 0.2Ω
Mounting: SMD
Kind of channel: enhancement
Kind of package: reel; tape
Pulsed drain current: -5.2A
Gate charge: 5.4nC
auf Bestellung 6105 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
417+0.2 EUR
603+0.14 EUR
650+0.13 EUR
705+0.12 EUR
1000+0.11 EUR
3000+0.098 EUR
Mindestbestellmenge: 417 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJC7409_R1_00001 PJC7409.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 39A; DFN5060-8
Mounting: SMD
Polarisation: unipolar
Drain current: 39A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: DFN5060-8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJC7410_R1_00001 PJC7410.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 38A; DFN5060-8
Mounting: SMD
Polarisation: unipolar
Drain current: 38A
Kind of channel: enhancement
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: 20V
Kind of package: reel; tape
Case: DFN5060-8
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJC7428_R1_00001 PJC7428.pdf
PJC7428_R1_00001
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 300mA; Idm: 0.6A; 350mW; SOT323
Mounting: SMD
Pulsed drain current: 0.6A
Power dissipation: 0.35W
Gate charge: 0.9nC
Polarisation: unipolar
Drain current: 0.3A
Kind of channel: enhancement
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Gate-source voltage: ±10V
Kind of package: reel; tape
Case: SOT323
On-state resistance: 4Ω
auf Bestellung 2750 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
278+0.31 EUR
463+0.18 EUR
734+0.12 EUR
872+0.098 EUR
991+0.086 EUR
Mindestbestellmenge: 278 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
PJC7438-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 63.8A; DFN3333-8
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: 20V
Drain current: 63.8A
Drain-source voltage: 80V
Application: automotive industry
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJC7438_R1_00001 PJC7438.pdf
Hersteller: PanJit Semiconductor
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 80V; 55A; DFN3333-8
Case: DFN3333-8
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Polarisation: unipolar
Gate-source voltage: 20V
Drain current: 55A
Drain-source voltage: 80V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
PJC7439-AU_R1_000A1 PJC7439-AU.pdf
PJC7439-AU_R1_000A1
Hersteller: PanJit Semiconductor
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -60V; -250mA; Idm: -1A; 350mW
Mounting: SMD
Case: SOT323
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -60V
Pulsed drain current: -1A
Drain current: -0.25A
Gate charge: 1.1nC
On-state resistance: 13Ω
Power dissipation: 0.35W
Gate-source voltage: ±20V
Application: automotive industry
auf Bestellung 2875 Stücke:
Lieferzeit 14-21 Tag (e)
AnzahlPrivatkunde
278+0.31 EUR
451+0.19 EUR
729+0.12 EUR
1000+0.086 EUR
1147+0.074 EUR
Mindestbestellmenge: 278 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 3 6 9 12 15 18 19 20 21 22 23 24 25 26 27 28 30 31  [ Nächste Seite >> ]