Produkte > ROHM SEMICONDUCTOR > Alle Produkte des Herstellers ROHM SEMICONDUCTOR (104291) > Seite 1737 nach 1739
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BD4825G-TR | ROHM SEMICONDUCTOR |
![]() Description: IC: supervisor circuit; voltage detector; open drain; reel,tape Type of integrated circuit: supervisor circuit Kind of integrated circuit: voltage detector Mounting: SMD Operating temperature: -40...105°C Supply voltage: 950mV DC...10V DC Kind of package: reel; tape Number of channels: 1 Threshold on-voltage: 2.5V Integrated circuit features: ±1% accuracy Active logical level: low Kind of RESET output: open drain Manufacturer series: BD48 |
Produkt ist nicht verfügbar |
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BU2508FV-E2 | ROHM SEMICONDUCTOR |
![]() Description: IC: D/A converter; 10bit; 10MHz; Ch: 4; 4.5÷5.5V; SSOP-B14; -30÷85°C Power dissipation: 0.7W Case: SSOP-B14 Mounting: SMD Operating temperature: -30...85°C DC supply current: 850mA Max DNL: ±1LSB Max INL: ±3.5LSB Number of channels: 4 Operating voltage: 4.5...5.5V Converter resolution: 10bit Interface: 3-wire Frequency: 10MHz Type of integrated circuit: D/A converter Integrated circuit features: rail-to-rail |
Produkt ist nicht verfügbar |
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BU4818F-TR | ROHM SEMICONDUCTOR |
![]() Description: IC: supervisor circuit; voltage detector; open drain; SOP4; Ch: 1 Supply voltage: 700mV DC...7V DC Manufacturer series: BU48 Operating temperature: -40...125°C Mounting: SMD Kind of package: reel; tape Active logical level: low Kind of RESET output: open drain Type of integrated circuit: supervisor circuit Kind of integrated circuit: voltage detector Number of channels: 1 Threshold on-voltage: 1.8V Case: SOP4 Integrated circuit features: ±1% accuracy |
Produkt ist nicht verfügbar |
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BU4818G-TR | ROHM SEMICONDUCTOR |
![]() Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1 Supply voltage: 700mV DC...7V DC Manufacturer series: BU48 Operating temperature: -40...125°C Mounting: SMD Kind of package: reel; tape Active logical level: low Kind of RESET output: open drain Type of integrated circuit: supervisor circuit Kind of integrated circuit: voltage detector Number of channels: 1 Threshold on-voltage: 1.8V Case: SSOP5 Integrated circuit features: ±1% accuracy |
Produkt ist nicht verfügbar |
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R6015ENXC7G | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 30A; 60W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 15A Power dissipation: 60W Case: TO220FP Gate-source voltage: ±20V On-state resistance: 0.56Ω Mounting: THT Kind of package: tube Kind of channel: enhancement Gate charge: 40nC Pulsed drain current: 30A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
RD3G500GNTL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 100A; 35W; DPAK,TO252 On-state resistance: 6.3mΩ Case: DPAK; TO252 Gate-source voltage: ±20V Power dissipation: 35W Drain-source voltage: 40V Drain current: 50A Pulsed drain current: 100A Kind of channel: enhancement Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 31nC |
Produkt ist nicht verfügbar |
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KDZVTR10B | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 1W; 10V; SMD; reel,tape; SOD123F; single diode; 10uA Type of diode: Zener Power dissipation: 1W Zener voltage: 10V Mounting: SMD Tolerance: ±2% Kind of package: reel; tape Case: SOD123F Semiconductor structure: single diode Leakage current: 10µA |
auf Bestellung 2497 Stücke: Lieferzeit 14-21 Tag (e) |
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RTF025N03FRATL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 800mW; TUMT3 Mounting: SMD Case: TUMT3 Kind of package: reel; tape Kind of channel: enhancement Polarisation: unipolar Gate charge: 3.7nC On-state resistance: 98mΩ Drain current: 2.5A Power dissipation: 0.8W Pulsed drain current: 10A Gate-source voltage: ±12V Drain-source voltage: 30V Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
RTF025N03TL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 800mW; TUMT3 Mounting: SMD Case: TUMT3 Kind of package: reel; tape Kind of channel: enhancement Polarisation: unipolar Gate charge: 3.7nC On-state resistance: 98mΩ Drain current: 2.5A Power dissipation: 0.8W Pulsed drain current: 10A Gate-source voltage: ±12V Drain-source voltage: 30V Type of transistor: N-MOSFET |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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2SCR573D3TL1 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; 50V; 3A; 10W; DPAK,TO252 Case: DPAK; TO252 Mounting: SMD Kind of package: reel; tape Collector current: 3A Power dissipation: 10W Current gain: 180...450 Collector-emitter voltage: 50V Frequency: 320MHz Polarisation: bipolar Type of transistor: NPN |
auf Bestellung 1694 Stücke: Lieferzeit 14-21 Tag (e) |
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BR24L01AF-WE2 | ROHM SEMICONDUCTOR |
![]() Description: IC: EEPROM memory; 1kbEEPROM; 2-wire,I2C; 128x8bit; 400kHz; SOP8 Case: SOP8 Mounting: SMD Kind of package: reel; tape Memory: 1kb EEPROM Clock frequency: 400kHz Interface: 2-wire; I2C Memory organisation: 128x8bit Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Kind of interface: serial Operating temperature: -40...85°C Access time: 5ms Supply voltage: 1.8...5.5V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BR24L01AFJ-WE2 | ROHM SEMICONDUCTOR |
![]() Description: IC: EEPROM memory; 1kbEEPROM; 2-wire,I2C; 128x8bit; 400kHz; SOP-J8 Case: SOP-J8 Mounting: SMD Kind of package: reel; tape Memory: 1kb EEPROM Clock frequency: 400kHz Interface: 2-wire; I2C Memory organisation: 128x8bit Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Kind of interface: serial Operating temperature: -40...85°C Access time: 5ms Supply voltage: 1.8...5.5V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BR24L01AFVM-WTR | ROHM SEMICONDUCTOR |
![]() Description: IC: EEPROM memory; 1kbEEPROM; 2-wire,I2C; 128x8bit; 400kHz; MSOP8 Case: MSOP8 Mounting: SMD Kind of package: reel; tape Memory: 1kb EEPROM Clock frequency: 400kHz Interface: 2-wire; I2C Memory organisation: 128x8bit Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Kind of interface: serial Operating temperature: -40...85°C Access time: 5ms Supply voltage: 1.8...5.5V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BR24L01AFVT-WE2 | ROHM SEMICONDUCTOR |
![]() Description: IC: EEPROM memory; 1kbEEPROM; 2-wire,I2C; 128x8bit; 400kHz; serial Case: TSSOP-B8 Mounting: SMD Kind of package: reel; tape Memory: 1kb EEPROM Clock frequency: 400kHz Interface: 2-wire; I2C Memory organisation: 128x8bit Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Kind of interface: serial Operating temperature: -40...85°C Access time: 5ms Supply voltage: 1.8...5.5V DC |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
BD45342G-TR | ROHM SEMICONDUCTOR |
![]() Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1 Mounting: SMD Manufacturer series: BD45 Operating temperature: -40...105°C Kind of package: reel; tape Integrated circuit features: Counter Timer Built-in Case: SSOP5 Active logical level: low Kind of RESET output: open drain Type of integrated circuit: supervisor circuit Kind of integrated circuit: voltage detector Supply voltage: 950mV DC...10V DC Number of channels: 1 Threshold on-voltage: 3.4V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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SML-H12P8TT86C | ROHM SEMICONDUCTOR |
![]() Description: LED; green; SMD; 0805; 2.5÷4mcd; 2.2VDC; 2x1.25x0.8mm; 20mA; 54mW Type of diode: LED LED colour: green Mounting: SMD Case: 0805 Luminosity: 2.5...4mcd Operating voltage: 2.2V DC Dimensions: 2x1.25x0.8mm LED current: 20mA Wavelength: 557...563nm LED lens: transparent Power: 54mW Front: flat |
auf Bestellung 2914 Stücke: Lieferzeit 14-21 Tag (e) |
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SML-H12P8TT86 | ROHM SEMICONDUCTOR |
![]() Description: LED; green; SMD; 0805; 2.5÷4mcd; 2.2VDC; 2x1.25x0.8mm; 20mA; 54mW Type of diode: LED LED colour: green Mounting: SMD Case: 0805 Luminosity: 2.5...4mcd Operating voltage: 2.2V DC Dimensions: 2x1.25x0.8mm LED current: 20mA Wavelength: 557...563nm LED lens: transparent Power: 54mW Front: flat |
auf Bestellung 3012 Stücke: Lieferzeit 14-21 Tag (e) |
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RB530CM-30T2R | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SOD923; SMD; 30V; 0.1A; reel,tape Type of diode: Schottky rectifying Max. off-state voltage: 30V Max. forward impulse current: 0.5A Semiconductor structure: single diode Case: SOD923 Mounting: SMD Leakage current: 0.3µA Kind of package: reel; tape Load current: 0.1A Max. forward voltage: 0.46V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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RB530CM-60T2R | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; SOD923; SMD; 60V; 0.1A; reel,tape Type of diode: Schottky rectifying Max. off-state voltage: 60V Max. forward impulse current: 0.2A Semiconductor structure: single diode Case: SOD923 Mounting: SMD Leakage current: 1µA Kind of package: reel; tape Load current: 0.1A Max. forward voltage: 0.6V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
RJP020N06FRAT100 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2A Pulsed drain current: 8A Power dissipation: 2W Case: MPT3 Gate-source voltage: ±12V On-state resistance: 0.3Ω Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
RJP020N06T100 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2A Pulsed drain current: 8A Power dissipation: 2W Case: MPT3 Gate-source voltage: ±12V On-state resistance: 0.3Ω Mounting: SMD Gate charge: 5nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
RHP020N06T100 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2A Pulsed drain current: 8A Power dissipation: 2W Case: MPT3 Gate-source voltage: ±20V On-state resistance: 0.34Ω Mounting: SMD Gate charge: 7nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
RSR020N06FRATL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 1W; TSMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2A Pulsed drain current: 8A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±20V On-state resistance: 0.21Ω Mounting: SMD Gate charge: 2.7nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
RSR020N06HZGTL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 1W; TSMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 2A Pulsed drain current: 8A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±20V On-state resistance: 0.21Ω Mounting: SMD Gate charge: 2.7nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
SCT3022ALGC11 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 93A; Idm: 232A; 339W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 93A Pulsed drain current: 232A Power dissipation: 339W Case: TO247 Gate-source voltage: -4...22V On-state resistance: 28.6mΩ Mounting: THT Gate charge: 133nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
SCT3022ALHRC11 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 93A; Idm: 232A; 339W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 93A Pulsed drain current: 232A Power dissipation: 339W Case: TO247 Gate-source voltage: -4...22V On-state resistance: 28.6mΩ Mounting: THT Gate charge: 133nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
SCT3030ARC14 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 650V Drain current: 70A Pulsed drain current: 175A Power dissipation: 262W Case: TO247-4 Gate-source voltage: -4...22V On-state resistance: 39mΩ Mounting: THT Gate charge: 104nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: Kelvin terminal |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
2SC4725TLP | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; 20V; 50mA; 150mW; SC75A,SOT416 Mounting: SMD Case: SC75A; SOT416 Kind of package: reel; tape Collector current: 50mA Power dissipation: 0.15W Collector-emitter voltage: 20V Current gain: 82...180 Frequency: 1.5GHz Polarisation: bipolar Type of transistor: NPN |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
RV2C010UNT2L | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 2A; 400mW; DFN1006-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 1A Pulsed drain current: 2A Power dissipation: 0.4W Case: DFN1006-3 Gate-source voltage: ±8V On-state resistance: 1.05Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
RV2C014BCT2CL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -20V; -1.4A; Idm: -2.8A; 600mW Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -20V Drain current: -1.4A Pulsed drain current: -2.8A Power dissipation: 0.6W Case: DFN1006-3 Gate-source voltage: ±8V On-state resistance: 0.7Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
RV2C002UNT2L | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 20V; 180mA; Idm: 0.6A; 100mW Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.18A Pulsed drain current: 0.6A Power dissipation: 0.1W Case: DFN1006-3 Gate-source voltage: ±10V On-state resistance: 11.4Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
RB088BM100FHTL | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 100V; 5Ax2 Semiconductor structure: common cathode; double Case: DPAK; SC63; TO252 Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Leakage current: 5µA Max. forward voltage: 0.87V Load current: 5A x2 Max. forward impulse current: 50A Max. off-state voltage: 100V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
RB098BM100FHTL | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 100V; 3Ax2 Semiconductor structure: common cathode; double Case: DPAK; SC63; TO252 Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Leakage current: 3µA Max. forward voltage: 0.77V Load current: 3A x2 Max. forward impulse current: 100A Max. off-state voltage: 100V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
RBQ15BM100AFHTL | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 100V; 7.5Ax2 Semiconductor structure: common cathode; double Case: DPAK; SC63; TO252 Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Leakage current: 140µA Max. forward voltage: 0.71V Load current: 7.5A x2 Max. forward impulse current: 100A Max. off-state voltage: 100V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
RBQ20BM100AFHTL | ROHM SEMICONDUCTOR |
![]() Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 100V; 10Ax2 Semiconductor structure: common cathode; double Case: DPAK; SC63; TO252 Kind of package: reel; tape Type of diode: Schottky rectifying Mounting: SMD Leakage current: 0.2mA Max. forward voltage: 0.69V Load current: 10A x2 Max. forward impulse current: 100A Max. off-state voltage: 100V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
SCT3022KLGC11 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 95A; Idm: 237A; 427W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 95A Pulsed drain current: 237A Power dissipation: 427W Case: TO247 Gate-source voltage: -4...22V On-state resistance: 28.6mΩ Mounting: THT Gate charge: 178nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
SCT3022KLHRC11 | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 95A; Idm: 237A; 427W Type of transistor: N-MOSFET Technology: SiC Polarisation: unipolar Drain-source voltage: 1.2kV Drain current: 95A Pulsed drain current: 237A Power dissipation: 427W Case: TO247 Gate-source voltage: -4...22V On-state resistance: 28.6mΩ Mounting: THT Gate charge: 178nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
RS1E280BNTB | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 112A; 30W; HSOP8 Kind of channel: enhancement Case: HSOP8 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 94nC On-state resistance: 3.2mΩ Gate-source voltage: ±20V Drain-source voltage: 30V Power dissipation: 30W Drain current: 80A Pulsed drain current: 112A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
RS1E280GNTB | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 112A; 31W; HSOP8 Kind of channel: enhancement Case: HSOP8 Type of transistor: N-MOSFET Kind of package: reel; tape Mounting: SMD Polarisation: unipolar Gate charge: 36nC On-state resistance: 3.8mΩ Gate-source voltage: ±20V Drain-source voltage: 30V Power dissipation: 31W Drain current: 80A Pulsed drain current: 112A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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2SC4774T106S | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; 6V; 50mA; 200mW; SC70,SOT323 Kind of package: reel; tape Type of transistor: NPN Mounting: SMD Polarisation: bipolar Collector current: 50mA Power dissipation: 0.2W Collector-emitter voltage: 6V Current gain: 270...560 Frequency: 800MHz Case: SC70; SOT323 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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2SC3906KT146S | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; 120V; 50mA; 200mW; SC59,SOT346 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 120V Collector current: 50mA Power dissipation: 0.2W Case: SC59; SOT346 Current gain: 270...560 Mounting: SMD Kind of package: reel; tape Frequency: 140MHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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2SC4713KT146S | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; 6V; 50mA; 200mW; SC59,SOT346 Kind of package: reel; tape Type of transistor: NPN Mounting: SMD Polarisation: bipolar Collector current: 50mA Power dissipation: 0.2W Collector-emitter voltage: 6V Current gain: 270...560 Frequency: 800MHz Case: SC59; SOT346 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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2SD1757KT146S | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN; bipolar; 15V; 0.5A; 200mW; SC59,SOT346 Kind of package: reel; tape Type of transistor: NPN Mounting: SMD Polarisation: bipolar Collector current: 0.5A Power dissipation: 0.2W Collector-emitter voltage: 15V Current gain: 270...560 Frequency: 150MHz Case: SC59; SOT346 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BD9778HFP-TR | ROHM SEMICONDUCTOR |
![]() Description: PMIC; DC/DC converter; Uin: 7÷35VDC; Uout: 1÷35VDC; 2A; HRP7; SMD Kind of package: reel; tape Operating temperature: -40...125°C Number of channels: 1 Mounting: SMD Output voltage: 1...35V DC Output current: 2A Input voltage: 7...35V DC Frequency: 500MHz Type of integrated circuit: PMIC Topology: buck Kind of integrated circuit: DC/DC converter Case: HRP7 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
RSR010N10FHATL | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 1A; Idm: 4A; 1W; TSMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1A Pulsed drain current: 4A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±20V On-state resistance: 0.58Ω Mounting: SMD Gate charge: 3.5nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
RSR010N10HZGTL | ROHM SEMICONDUCTOR |
![]() Description: Transistor: N-MOSFET; unipolar; 100V; 1A; Idm: 4A; 1W; TSMT3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 100V Drain current: 1A Pulsed drain current: 4A Power dissipation: 1W Case: TSMT3 Gate-source voltage: ±20V On-state resistance: 0.58Ω Mounting: SMD Gate charge: 3.5nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BZX84C10VLYFHT116 | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 250mW; 10V; SMD; reel,tape; SOT23; single diode; 2uA Case: SOT23 Power dissipation: 0.25W Tolerance: ±6% Zener voltage: 10V Application: automotive industry Semiconductor structure: single diode Kind of package: reel; tape Type of diode: Zener Mounting: SMD Leakage current: 2µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BZX84C10VLYT116 | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 250mW; 10V; SMD; reel,tape; SOT23; single diode; 0.2uA Type of diode: Zener Power dissipation: 0.25W Zener voltage: 10V Mounting: SMD Tolerance: ±6% Kind of package: reel; tape Case: SOT23 Semiconductor structure: single diode Leakage current: 0.2µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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RRS100P03HZGTB | ROHM SEMICONDUCTOR |
![]() Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -40A; 2W; SOP8; ESD Kind of channel: enhancement Version: ESD Type of transistor: P-MOSFET Kind of package: reel; tape Mounting: SMD Case: SOP8 Polarisation: unipolar Pulsed drain current: -40A Drain-source voltage: -30V Drain current: -10A Gate charge: 39nC On-state resistance: 12.6mΩ Power dissipation: 2W Gate-source voltage: ±20V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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UMG8NTR | ROHM SEMICONDUCTOR |
![]() Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88A,SOT353 Type of transistor: NPN x2 Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Case: SC88A; SOT353 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Semiconductor structure: common emitter Base resistor: 4.7kΩ Base-emitter resistor: 47kΩ |
auf Bestellung 2595 Stücke: Lieferzeit 14-21 Tag (e) |
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BU9880GUL-WE2 | ROHM SEMICONDUCTOR |
![]() Description: IC: EEPROM memory; 64kbEEPROM; 2-wire,I2C; 8kx8bit; 400kHz; serial Supply voltage: 1.7...5.5V DC Operating temperature: -40...85°C Kind of interface: serial Access time: 5ms Memory: 64kb EEPROM Clock frequency: 400kHz Interface: 2-wire; I2C Memory organisation: 8kx8bit Kind of package: reel; tape Case: VCSP50L1 Kind of memory: EEPROM Type of integrated circuit: EEPROM memory Mounting: SMD |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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BAV99HYFHT116 | ROHM SEMICONDUCTOR |
![]() Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 100V Load current: 0.215A Reverse recovery time: 4ns Semiconductor structure: double series Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4A Power dissipation: 0.25W Kind of package: reel; tape Max. load current: 0.5A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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MMBZ16VALFHT116 | ROHM SEMICONDUCTOR |
![]() Description: Diode: TVS array; 16V; 1.7A; 40W; double,common anode; SOT23 Case: SOT23 Max. forward impulse current: 1.7A Max. off-state voltage: 13V Breakdown voltage: 16V Peak pulse power dissipation: 40W Semiconductor structure: common anode; double Kind of package: reel; tape Type of diode: TVS array Mounting: SMD Leakage current: 50nA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BZX84C13VLYFHT116 | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 250mW; 13V; SMD; reel,tape; SOT23; single diode; 0.1uA Case: SOT23 Power dissipation: 0.25W Tolerance: ±6.5% Zener voltage: 13V Application: automotive industry Semiconductor structure: single diode Kind of package: reel; tape Type of diode: Zener Mounting: SMD Leakage current: 0.1µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BAS40-06HYFHT116 | ROHM SEMICONDUCTOR |
![]() Description: Diode: switching; SMD; 40V; 120mAx2; SOT23; Ufmax: 1V; Ifsm: 0.6A Type of diode: switching Case: SOT23 Mounting: SMD Max. off-state voltage: 40V Load current: 120mA x2 Semiconductor structure: common anode; double Max. forward voltage: 1V Max. forward impulse current: 0.6A Kind of package: reel; tape Max. load current: 120mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BZX84B10VLYFHT116 | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 250mW; 10V; SMD; reel,tape; SOT23; single diode; 0.2uA Case: SOT23 Power dissipation: 0.25W Tolerance: ±2% Zener voltage: 10V Application: automotive industry Semiconductor structure: single diode Kind of package: reel; tape Type of diode: Zener Mounting: SMD Leakage current: 0.2µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BZX84B15VLYFHT116 | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 250mW; 15V; SMD; reel,tape; SOT23; single diode; 0.1uA Case: SOT23 Power dissipation: 0.25W Tolerance: ±2% Zener voltage: 15V Application: automotive industry Semiconductor structure: single diode Kind of package: reel; tape Type of diode: Zener Mounting: SMD Leakage current: 0.1µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BZX84B16VLYFHT116 | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 250mW; 16V; SMD; reel,tape; SOT23; single diode; 0.1uA Case: SOT23 Power dissipation: 0.25W Tolerance: ±2% Zener voltage: 16V Application: automotive industry Semiconductor structure: single diode Kind of package: reel; tape Type of diode: Zener Mounting: SMD Leakage current: 0.1µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BZX84B18VLYFHT116 | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 250mW; 18V; SMD; reel,tape; SOT23; single diode; 0.1uA Case: SOT23 Power dissipation: 0.25W Tolerance: ±2% Zener voltage: 18V Application: automotive industry Semiconductor structure: single diode Kind of package: reel; tape Type of diode: Zener Mounting: SMD Leakage current: 0.1µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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BZX84B24VLYFHT116 | ROHM SEMICONDUCTOR |
![]() Description: Diode: Zener; 250mW; 24V; SMD; reel,tape; SOT23; single diode; 0.1uA Case: SOT23 Power dissipation: 0.25W Tolerance: ±2% Zener voltage: 24V Application: automotive industry Semiconductor structure: single diode Kind of package: reel; tape Type of diode: Zener Mounting: SMD Leakage current: 0.1µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
BD4825G-TR |
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Hersteller: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; reel,tape
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Mounting: SMD
Operating temperature: -40...105°C
Supply voltage: 950mV DC...10V DC
Kind of package: reel; tape
Number of channels: 1
Threshold on-voltage: 2.5V
Integrated circuit features: ±1% accuracy
Active logical level: low
Kind of RESET output: open drain
Manufacturer series: BD48
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; reel,tape
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Mounting: SMD
Operating temperature: -40...105°C
Supply voltage: 950mV DC...10V DC
Kind of package: reel; tape
Number of channels: 1
Threshold on-voltage: 2.5V
Integrated circuit features: ±1% accuracy
Active logical level: low
Kind of RESET output: open drain
Manufacturer series: BD48
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BU2508FV-E2 |
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Hersteller: ROHM SEMICONDUCTOR
Category: D/A converters - integrated circuits
Description: IC: D/A converter; 10bit; 10MHz; Ch: 4; 4.5÷5.5V; SSOP-B14; -30÷85°C
Power dissipation: 0.7W
Case: SSOP-B14
Mounting: SMD
Operating temperature: -30...85°C
DC supply current: 850mA
Max DNL: ±1LSB
Max INL: ±3.5LSB
Number of channels: 4
Operating voltage: 4.5...5.5V
Converter resolution: 10bit
Interface: 3-wire
Frequency: 10MHz
Type of integrated circuit: D/A converter
Integrated circuit features: rail-to-rail
Category: D/A converters - integrated circuits
Description: IC: D/A converter; 10bit; 10MHz; Ch: 4; 4.5÷5.5V; SSOP-B14; -30÷85°C
Power dissipation: 0.7W
Case: SSOP-B14
Mounting: SMD
Operating temperature: -30...85°C
DC supply current: 850mA
Max DNL: ±1LSB
Max INL: ±3.5LSB
Number of channels: 4
Operating voltage: 4.5...5.5V
Converter resolution: 10bit
Interface: 3-wire
Frequency: 10MHz
Type of integrated circuit: D/A converter
Integrated circuit features: rail-to-rail
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BU4818F-TR |
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Hersteller: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SOP4; Ch: 1
Supply voltage: 700mV DC...7V DC
Manufacturer series: BU48
Operating temperature: -40...125°C
Mounting: SMD
Kind of package: reel; tape
Active logical level: low
Kind of RESET output: open drain
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Number of channels: 1
Threshold on-voltage: 1.8V
Case: SOP4
Integrated circuit features: ±1% accuracy
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SOP4; Ch: 1
Supply voltage: 700mV DC...7V DC
Manufacturer series: BU48
Operating temperature: -40...125°C
Mounting: SMD
Kind of package: reel; tape
Active logical level: low
Kind of RESET output: open drain
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Number of channels: 1
Threshold on-voltage: 1.8V
Case: SOP4
Integrated circuit features: ±1% accuracy
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BU4818G-TR |
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Hersteller: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Supply voltage: 700mV DC...7V DC
Manufacturer series: BU48
Operating temperature: -40...125°C
Mounting: SMD
Kind of package: reel; tape
Active logical level: low
Kind of RESET output: open drain
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Number of channels: 1
Threshold on-voltage: 1.8V
Case: SSOP5
Integrated circuit features: ±1% accuracy
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Supply voltage: 700mV DC...7V DC
Manufacturer series: BU48
Operating temperature: -40...125°C
Mounting: SMD
Kind of package: reel; tape
Active logical level: low
Kind of RESET output: open drain
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Number of channels: 1
Threshold on-voltage: 1.8V
Case: SSOP5
Integrated circuit features: ±1% accuracy
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
R6015ENXC7G |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 30A; 60W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 60W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.56Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 40nC
Pulsed drain current: 30A
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 15A; Idm: 30A; 60W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 15A
Power dissipation: 60W
Case: TO220FP
Gate-source voltage: ±20V
On-state resistance: 0.56Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Gate charge: 40nC
Pulsed drain current: 30A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RD3G500GNTL |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 100A; 35W; DPAK,TO252
On-state resistance: 6.3mΩ
Case: DPAK; TO252
Gate-source voltage: ±20V
Power dissipation: 35W
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 100A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 31nC
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 40V; 50A; Idm: 100A; 35W; DPAK,TO252
On-state resistance: 6.3mΩ
Case: DPAK; TO252
Gate-source voltage: ±20V
Power dissipation: 35W
Drain-source voltage: 40V
Drain current: 50A
Pulsed drain current: 100A
Kind of channel: enhancement
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 31nC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
KDZVTR10B |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 10V; SMD; reel,tape; SOD123F; single diode; 10uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 10µA
Category: SMD Zener diodes
Description: Diode: Zener; 1W; 10V; SMD; reel,tape; SOD123F; single diode; 10uA
Type of diode: Zener
Power dissipation: 1W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±2%
Kind of package: reel; tape
Case: SOD123F
Semiconductor structure: single diode
Leakage current: 10µA
auf Bestellung 2497 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
167+ | 0.43 EUR |
207+ | 0.35 EUR |
234+ | 0.31 EUR |
311+ | 0.23 EUR |
353+ | 0.2 EUR |
676+ | 0.11 EUR |
715+ | 0.1 EUR |
RTF025N03FRATL |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 800mW; TUMT3
Mounting: SMD
Case: TUMT3
Kind of package: reel; tape
Kind of channel: enhancement
Polarisation: unipolar
Gate charge: 3.7nC
On-state resistance: 98mΩ
Drain current: 2.5A
Power dissipation: 0.8W
Pulsed drain current: 10A
Gate-source voltage: ±12V
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 800mW; TUMT3
Mounting: SMD
Case: TUMT3
Kind of package: reel; tape
Kind of channel: enhancement
Polarisation: unipolar
Gate charge: 3.7nC
On-state resistance: 98mΩ
Drain current: 2.5A
Power dissipation: 0.8W
Pulsed drain current: 10A
Gate-source voltage: ±12V
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
RTF025N03TL |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 800mW; TUMT3
Mounting: SMD
Case: TUMT3
Kind of package: reel; tape
Kind of channel: enhancement
Polarisation: unipolar
Gate charge: 3.7nC
On-state resistance: 98mΩ
Drain current: 2.5A
Power dissipation: 0.8W
Pulsed drain current: 10A
Gate-source voltage: ±12V
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 2.5A; Idm: 10A; 800mW; TUMT3
Mounting: SMD
Case: TUMT3
Kind of package: reel; tape
Kind of channel: enhancement
Polarisation: unipolar
Gate charge: 3.7nC
On-state resistance: 98mΩ
Drain current: 2.5A
Power dissipation: 0.8W
Pulsed drain current: 10A
Gate-source voltage: ±12V
Drain-source voltage: 30V
Type of transistor: N-MOSFET
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
2SCR573D3TL1 |
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Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 10W; DPAK,TO252
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Collector current: 3A
Power dissipation: 10W
Current gain: 180...450
Collector-emitter voltage: 50V
Frequency: 320MHz
Polarisation: bipolar
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 50V; 3A; 10W; DPAK,TO252
Case: DPAK; TO252
Mounting: SMD
Kind of package: reel; tape
Collector current: 3A
Power dissipation: 10W
Current gain: 180...450
Collector-emitter voltage: 50V
Frequency: 320MHz
Polarisation: bipolar
Type of transistor: NPN
auf Bestellung 1694 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
65+ | 1.1 EUR |
77+ | 0.94 EUR |
213+ | 0.34 EUR |
226+ | 0.32 EUR |
BR24L01AF-WE2 |
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Hersteller: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; 2-wire,I2C; 128x8bit; 400kHz; SOP8
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
Memory: 1kb EEPROM
Clock frequency: 400kHz
Interface: 2-wire; I2C
Memory organisation: 128x8bit
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 5ms
Supply voltage: 1.8...5.5V DC
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; 2-wire,I2C; 128x8bit; 400kHz; SOP8
Case: SOP8
Mounting: SMD
Kind of package: reel; tape
Memory: 1kb EEPROM
Clock frequency: 400kHz
Interface: 2-wire; I2C
Memory organisation: 128x8bit
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 5ms
Supply voltage: 1.8...5.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BR24L01AFJ-WE2 |
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Hersteller: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; 2-wire,I2C; 128x8bit; 400kHz; SOP-J8
Case: SOP-J8
Mounting: SMD
Kind of package: reel; tape
Memory: 1kb EEPROM
Clock frequency: 400kHz
Interface: 2-wire; I2C
Memory organisation: 128x8bit
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 5ms
Supply voltage: 1.8...5.5V DC
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; 2-wire,I2C; 128x8bit; 400kHz; SOP-J8
Case: SOP-J8
Mounting: SMD
Kind of package: reel; tape
Memory: 1kb EEPROM
Clock frequency: 400kHz
Interface: 2-wire; I2C
Memory organisation: 128x8bit
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 5ms
Supply voltage: 1.8...5.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BR24L01AFVM-WTR |
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Hersteller: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; 2-wire,I2C; 128x8bit; 400kHz; MSOP8
Case: MSOP8
Mounting: SMD
Kind of package: reel; tape
Memory: 1kb EEPROM
Clock frequency: 400kHz
Interface: 2-wire; I2C
Memory organisation: 128x8bit
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 5ms
Supply voltage: 1.8...5.5V DC
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; 2-wire,I2C; 128x8bit; 400kHz; MSOP8
Case: MSOP8
Mounting: SMD
Kind of package: reel; tape
Memory: 1kb EEPROM
Clock frequency: 400kHz
Interface: 2-wire; I2C
Memory organisation: 128x8bit
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 5ms
Supply voltage: 1.8...5.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BR24L01AFVT-WE2 |
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Hersteller: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; 2-wire,I2C; 128x8bit; 400kHz; serial
Case: TSSOP-B8
Mounting: SMD
Kind of package: reel; tape
Memory: 1kb EEPROM
Clock frequency: 400kHz
Interface: 2-wire; I2C
Memory organisation: 128x8bit
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 5ms
Supply voltage: 1.8...5.5V DC
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 1kbEEPROM; 2-wire,I2C; 128x8bit; 400kHz; serial
Case: TSSOP-B8
Mounting: SMD
Kind of package: reel; tape
Memory: 1kb EEPROM
Clock frequency: 400kHz
Interface: 2-wire; I2C
Memory organisation: 128x8bit
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Kind of interface: serial
Operating temperature: -40...85°C
Access time: 5ms
Supply voltage: 1.8...5.5V DC
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
BD45342G-TR |
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Hersteller: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Mounting: SMD
Manufacturer series: BD45
Operating temperature: -40...105°C
Kind of package: reel; tape
Integrated circuit features: Counter Timer Built-in
Case: SSOP5
Active logical level: low
Kind of RESET output: open drain
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Supply voltage: 950mV DC...10V DC
Number of channels: 1
Threshold on-voltage: 3.4V
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SSOP5; Ch: 1
Mounting: SMD
Manufacturer series: BD45
Operating temperature: -40...105°C
Kind of package: reel; tape
Integrated circuit features: Counter Timer Built-in
Case: SSOP5
Active logical level: low
Kind of RESET output: open drain
Type of integrated circuit: supervisor circuit
Kind of integrated circuit: voltage detector
Supply voltage: 950mV DC...10V DC
Number of channels: 1
Threshold on-voltage: 3.4V
Produkt ist nicht verfügbar
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SML-H12P8TT86C |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; green; SMD; 0805; 2.5÷4mcd; 2.2VDC; 2x1.25x0.8mm; 20mA; 54mW
Type of diode: LED
LED colour: green
Mounting: SMD
Case: 0805
Luminosity: 2.5...4mcd
Operating voltage: 2.2V DC
Dimensions: 2x1.25x0.8mm
LED current: 20mA
Wavelength: 557...563nm
LED lens: transparent
Power: 54mW
Front: flat
Category: SMD colour LEDs
Description: LED; green; SMD; 0805; 2.5÷4mcd; 2.2VDC; 2x1.25x0.8mm; 20mA; 54mW
Type of diode: LED
LED colour: green
Mounting: SMD
Case: 0805
Luminosity: 2.5...4mcd
Operating voltage: 2.2V DC
Dimensions: 2x1.25x0.8mm
LED current: 20mA
Wavelength: 557...563nm
LED lens: transparent
Power: 54mW
Front: flat
auf Bestellung 2914 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
193+ | 0.37 EUR |
266+ | 0.27 EUR |
313+ | 0.23 EUR |
400+ | 0.18 EUR |
596+ | 0.12 EUR |
633+ | 0.11 EUR |
SML-H12P8TT86 |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; green; SMD; 0805; 2.5÷4mcd; 2.2VDC; 2x1.25x0.8mm; 20mA; 54mW
Type of diode: LED
LED colour: green
Mounting: SMD
Case: 0805
Luminosity: 2.5...4mcd
Operating voltage: 2.2V DC
Dimensions: 2x1.25x0.8mm
LED current: 20mA
Wavelength: 557...563nm
LED lens: transparent
Power: 54mW
Front: flat
Category: SMD colour LEDs
Description: LED; green; SMD; 0805; 2.5÷4mcd; 2.2VDC; 2x1.25x0.8mm; 20mA; 54mW
Type of diode: LED
LED colour: green
Mounting: SMD
Case: 0805
Luminosity: 2.5...4mcd
Operating voltage: 2.2V DC
Dimensions: 2x1.25x0.8mm
LED current: 20mA
Wavelength: 557...563nm
LED lens: transparent
Power: 54mW
Front: flat
auf Bestellung 3012 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
152+ | 0.47 EUR |
205+ | 0.35 EUR |
283+ | 0.25 EUR |
327+ | 0.22 EUR |
562+ | 0.13 EUR |
596+ | 0.12 EUR |
RB530CM-30T2R |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD923; SMD; 30V; 0.1A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward impulse current: 0.5A
Semiconductor structure: single diode
Case: SOD923
Mounting: SMD
Leakage current: 0.3µA
Kind of package: reel; tape
Load current: 0.1A
Max. forward voltage: 0.46V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD923; SMD; 30V; 0.1A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward impulse current: 0.5A
Semiconductor structure: single diode
Case: SOD923
Mounting: SMD
Leakage current: 0.3µA
Kind of package: reel; tape
Load current: 0.1A
Max. forward voltage: 0.46V
Produkt ist nicht verfügbar
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RB530CM-60T2R |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD923; SMD; 60V; 0.1A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 0.2A
Semiconductor structure: single diode
Case: SOD923
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Load current: 0.1A
Max. forward voltage: 0.6V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SOD923; SMD; 60V; 0.1A; reel,tape
Type of diode: Schottky rectifying
Max. off-state voltage: 60V
Max. forward impulse current: 0.2A
Semiconductor structure: single diode
Case: SOD923
Mounting: SMD
Leakage current: 1µA
Kind of package: reel; tape
Load current: 0.1A
Max. forward voltage: 0.6V
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RJP020N06FRAT100 |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±12V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±12V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhancement
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RJP020N06T100 |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±12V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±12V
On-state resistance: 0.3Ω
Mounting: SMD
Gate charge: 5nC
Kind of package: reel; tape
Kind of channel: enhancement
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RHP020N06T100 |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±20V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 2W; MPT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 2W
Case: MPT3
Gate-source voltage: ±20V
On-state resistance: 0.34Ω
Mounting: SMD
Gate charge: 7nC
Kind of package: reel; tape
Kind of channel: enhancement
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RSR020N06FRATL |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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RSR020N06HZGTL |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 2A; Idm: 8A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 2A
Pulsed drain current: 8A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.21Ω
Mounting: SMD
Gate charge: 2.7nC
Kind of package: reel; tape
Kind of channel: enhancement
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SCT3022ALGC11 |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 93A; Idm: 232A; 339W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 93A
Pulsed drain current: 232A
Power dissipation: 339W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 28.6mΩ
Mounting: THT
Gate charge: 133nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 93A; Idm: 232A; 339W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 93A
Pulsed drain current: 232A
Power dissipation: 339W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 28.6mΩ
Mounting: THT
Gate charge: 133nC
Kind of package: tube
Kind of channel: enhancement
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SCT3022ALHRC11 |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 93A; Idm: 232A; 339W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 93A
Pulsed drain current: 232A
Power dissipation: 339W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 28.6mΩ
Mounting: THT
Gate charge: 133nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 93A; Idm: 232A; 339W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 93A
Pulsed drain current: 232A
Power dissipation: 339W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 28.6mΩ
Mounting: THT
Gate charge: 133nC
Kind of package: tube
Kind of channel: enhancement
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SCT3030ARC14 |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 175A
Power dissipation: 262W
Case: TO247-4
Gate-source voltage: -4...22V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 650V; 70A; Idm: 175A; 262W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 70A
Pulsed drain current: 175A
Power dissipation: 262W
Case: TO247-4
Gate-source voltage: -4...22V
On-state resistance: 39mΩ
Mounting: THT
Gate charge: 104nC
Kind of package: tube
Kind of channel: enhancement
Features of semiconductor devices: Kelvin terminal
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2SC4725TLP |
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Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 50mA; 150mW; SC75A,SOT416
Mounting: SMD
Case: SC75A; SOT416
Kind of package: reel; tape
Collector current: 50mA
Power dissipation: 0.15W
Collector-emitter voltage: 20V
Current gain: 82...180
Frequency: 1.5GHz
Polarisation: bipolar
Type of transistor: NPN
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 20V; 50mA; 150mW; SC75A,SOT416
Mounting: SMD
Case: SC75A; SOT416
Kind of package: reel; tape
Collector current: 50mA
Power dissipation: 0.15W
Collector-emitter voltage: 20V
Current gain: 82...180
Frequency: 1.5GHz
Polarisation: bipolar
Type of transistor: NPN
Produkt ist nicht verfügbar
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RV2C010UNT2L |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 2A; 400mW; DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1A
Pulsed drain current: 2A
Power dissipation: 0.4W
Case: DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 1.05Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 1A; Idm: 2A; 400mW; DFN1006-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 1A
Pulsed drain current: 2A
Power dissipation: 0.4W
Case: DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 1.05Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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RV2C014BCT2CL |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.4A; Idm: -2.8A; 600mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.4A
Pulsed drain current: -2.8A
Power dissipation: 0.6W
Case: DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 0.7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -20V; -1.4A; Idm: -2.8A; 600mW
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -20V
Drain current: -1.4A
Pulsed drain current: -2.8A
Power dissipation: 0.6W
Case: DFN1006-3
Gate-source voltage: ±8V
On-state resistance: 0.7Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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RV2C002UNT2L |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 180mA; Idm: 0.6A; 100mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.18A
Pulsed drain current: 0.6A
Power dissipation: 0.1W
Case: DFN1006-3
Gate-source voltage: ±10V
On-state resistance: 11.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 180mA; Idm: 0.6A; 100mW
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.18A
Pulsed drain current: 0.6A
Power dissipation: 0.1W
Case: DFN1006-3
Gate-source voltage: ±10V
On-state resistance: 11.4Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
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RB088BM100FHTL |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 100V; 5Ax2
Semiconductor structure: common cathode; double
Case: DPAK; SC63; TO252
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Leakage current: 5µA
Max. forward voltage: 0.87V
Load current: 5A x2
Max. forward impulse current: 50A
Max. off-state voltage: 100V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 100V; 5Ax2
Semiconductor structure: common cathode; double
Case: DPAK; SC63; TO252
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Leakage current: 5µA
Max. forward voltage: 0.87V
Load current: 5A x2
Max. forward impulse current: 50A
Max. off-state voltage: 100V
Produkt ist nicht verfügbar
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RB098BM100FHTL |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 100V; 3Ax2
Semiconductor structure: common cathode; double
Case: DPAK; SC63; TO252
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Leakage current: 3µA
Max. forward voltage: 0.77V
Load current: 3A x2
Max. forward impulse current: 100A
Max. off-state voltage: 100V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 100V; 3Ax2
Semiconductor structure: common cathode; double
Case: DPAK; SC63; TO252
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Leakage current: 3µA
Max. forward voltage: 0.77V
Load current: 3A x2
Max. forward impulse current: 100A
Max. off-state voltage: 100V
Produkt ist nicht verfügbar
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RBQ15BM100AFHTL |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 100V; 7.5Ax2
Semiconductor structure: common cathode; double
Case: DPAK; SC63; TO252
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Leakage current: 140µA
Max. forward voltage: 0.71V
Load current: 7.5A x2
Max. forward impulse current: 100A
Max. off-state voltage: 100V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 100V; 7.5Ax2
Semiconductor structure: common cathode; double
Case: DPAK; SC63; TO252
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Leakage current: 140µA
Max. forward voltage: 0.71V
Load current: 7.5A x2
Max. forward impulse current: 100A
Max. off-state voltage: 100V
Produkt ist nicht verfügbar
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RBQ20BM100AFHTL |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 100V; 10Ax2
Semiconductor structure: common cathode; double
Case: DPAK; SC63; TO252
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Leakage current: 0.2mA
Max. forward voltage: 0.69V
Load current: 10A x2
Max. forward impulse current: 100A
Max. off-state voltage: 100V
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; DPAK,SC63,TO252; SMD; 100V; 10Ax2
Semiconductor structure: common cathode; double
Case: DPAK; SC63; TO252
Kind of package: reel; tape
Type of diode: Schottky rectifying
Mounting: SMD
Leakage current: 0.2mA
Max. forward voltage: 0.69V
Load current: 10A x2
Max. forward impulse current: 100A
Max. off-state voltage: 100V
Produkt ist nicht verfügbar
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SCT3022KLGC11 |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 95A; Idm: 237A; 427W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 95A
Pulsed drain current: 237A
Power dissipation: 427W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 28.6mΩ
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 95A; Idm: 237A; 427W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 95A
Pulsed drain current: 237A
Power dissipation: 427W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 28.6mΩ
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhancement
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SCT3022KLHRC11 |
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Hersteller: ROHM SEMICONDUCTOR
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 95A; Idm: 237A; 427W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 95A
Pulsed drain current: 237A
Power dissipation: 427W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 28.6mΩ
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 95A; Idm: 237A; 427W
Type of transistor: N-MOSFET
Technology: SiC
Polarisation: unipolar
Drain-source voltage: 1.2kV
Drain current: 95A
Pulsed drain current: 237A
Power dissipation: 427W
Case: TO247
Gate-source voltage: -4...22V
On-state resistance: 28.6mΩ
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Kind of channel: enhancement
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RS1E280BNTB |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 112A; 30W; HSOP8
Kind of channel: enhancement
Case: HSOP8
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 94nC
On-state resistance: 3.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 30W
Drain current: 80A
Pulsed drain current: 112A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 112A; 30W; HSOP8
Kind of channel: enhancement
Case: HSOP8
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 94nC
On-state resistance: 3.2mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 30W
Drain current: 80A
Pulsed drain current: 112A
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RS1E280GNTB |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 112A; 31W; HSOP8
Kind of channel: enhancement
Case: HSOP8
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 36nC
On-state resistance: 3.8mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 31W
Drain current: 80A
Pulsed drain current: 112A
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 30V; 80A; Idm: 112A; 31W; HSOP8
Kind of channel: enhancement
Case: HSOP8
Type of transistor: N-MOSFET
Kind of package: reel; tape
Mounting: SMD
Polarisation: unipolar
Gate charge: 36nC
On-state resistance: 3.8mΩ
Gate-source voltage: ±20V
Drain-source voltage: 30V
Power dissipation: 31W
Drain current: 80A
Pulsed drain current: 112A
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2SC4774T106S |
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Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 6V; 50mA; 200mW; SC70,SOT323
Kind of package: reel; tape
Type of transistor: NPN
Mounting: SMD
Polarisation: bipolar
Collector current: 50mA
Power dissipation: 0.2W
Collector-emitter voltage: 6V
Current gain: 270...560
Frequency: 800MHz
Case: SC70; SOT323
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 6V; 50mA; 200mW; SC70,SOT323
Kind of package: reel; tape
Type of transistor: NPN
Mounting: SMD
Polarisation: bipolar
Collector current: 50mA
Power dissipation: 0.2W
Collector-emitter voltage: 6V
Current gain: 270...560
Frequency: 800MHz
Case: SC70; SOT323
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2SC3906KT146S |
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Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 50mA; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 50mA
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 270...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 120V; 50mA; 200mW; SC59,SOT346
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 120V
Collector current: 50mA
Power dissipation: 0.2W
Case: SC59; SOT346
Current gain: 270...560
Mounting: SMD
Kind of package: reel; tape
Frequency: 140MHz
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2SC4713KT146S |
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Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 6V; 50mA; 200mW; SC59,SOT346
Kind of package: reel; tape
Type of transistor: NPN
Mounting: SMD
Polarisation: bipolar
Collector current: 50mA
Power dissipation: 0.2W
Collector-emitter voltage: 6V
Current gain: 270...560
Frequency: 800MHz
Case: SC59; SOT346
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 6V; 50mA; 200mW; SC59,SOT346
Kind of package: reel; tape
Type of transistor: NPN
Mounting: SMD
Polarisation: bipolar
Collector current: 50mA
Power dissipation: 0.2W
Collector-emitter voltage: 6V
Current gain: 270...560
Frequency: 800MHz
Case: SC59; SOT346
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2SD1757KT146S |
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Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.5A; 200mW; SC59,SOT346
Kind of package: reel; tape
Type of transistor: NPN
Mounting: SMD
Polarisation: bipolar
Collector current: 0.5A
Power dissipation: 0.2W
Collector-emitter voltage: 15V
Current gain: 270...560
Frequency: 150MHz
Case: SC59; SOT346
Category: NPN SMD transistors
Description: Transistor: NPN; bipolar; 15V; 0.5A; 200mW; SC59,SOT346
Kind of package: reel; tape
Type of transistor: NPN
Mounting: SMD
Polarisation: bipolar
Collector current: 0.5A
Power dissipation: 0.2W
Collector-emitter voltage: 15V
Current gain: 270...560
Frequency: 150MHz
Case: SC59; SOT346
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BD9778HFP-TR |
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Hersteller: ROHM SEMICONDUCTOR
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 7÷35VDC; Uout: 1÷35VDC; 2A; HRP7; SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Mounting: SMD
Output voltage: 1...35V DC
Output current: 2A
Input voltage: 7...35V DC
Frequency: 500MHz
Type of integrated circuit: PMIC
Topology: buck
Kind of integrated circuit: DC/DC converter
Case: HRP7
Category: Voltage regulators - DC/DC circuits
Description: PMIC; DC/DC converter; Uin: 7÷35VDC; Uout: 1÷35VDC; 2A; HRP7; SMD
Kind of package: reel; tape
Operating temperature: -40...125°C
Number of channels: 1
Mounting: SMD
Output voltage: 1...35V DC
Output current: 2A
Input voltage: 7...35V DC
Frequency: 500MHz
Type of integrated circuit: PMIC
Topology: buck
Kind of integrated circuit: DC/DC converter
Case: HRP7
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RSR010N10FHATL |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1A; Idm: 4A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1A
Pulsed drain current: 4A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.58Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1A; Idm: 4A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1A
Pulsed drain current: 4A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.58Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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RSR010N10HZGTL |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1A; Idm: 4A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1A
Pulsed drain current: 4A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.58Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 1A; Idm: 4A; 1W; TSMT3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 100V
Drain current: 1A
Pulsed drain current: 4A
Power dissipation: 1W
Case: TSMT3
Gate-source voltage: ±20V
On-state resistance: 0.58Ω
Mounting: SMD
Gate charge: 3.5nC
Kind of package: reel; tape
Kind of channel: enhancement
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BZX84C10VLYFHT116 |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 10V; SMD; reel,tape; SOT23; single diode; 2uA
Case: SOT23
Power dissipation: 0.25W
Tolerance: ±6%
Zener voltage: 10V
Application: automotive industry
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Leakage current: 2µA
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 10V; SMD; reel,tape; SOT23; single diode; 2uA
Case: SOT23
Power dissipation: 0.25W
Tolerance: ±6%
Zener voltage: 10V
Application: automotive industry
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Leakage current: 2µA
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BZX84C10VLYT116 |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 10V; SMD; reel,tape; SOT23; single diode; 0.2uA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.2µA
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 10V; SMD; reel,tape; SOT23; single diode; 0.2uA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 10V
Mounting: SMD
Tolerance: ±6%
Kind of package: reel; tape
Case: SOT23
Semiconductor structure: single diode
Leakage current: 0.2µA
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RRS100P03HZGTB |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -40A; 2W; SOP8; ESD
Kind of channel: enhancement
Version: ESD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOP8
Polarisation: unipolar
Pulsed drain current: -40A
Drain-source voltage: -30V
Drain current: -10A
Gate charge: 39nC
On-state resistance: 12.6mΩ
Power dissipation: 2W
Gate-source voltage: ±20V
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -10A; Idm: -40A; 2W; SOP8; ESD
Kind of channel: enhancement
Version: ESD
Type of transistor: P-MOSFET
Kind of package: reel; tape
Mounting: SMD
Case: SOP8
Polarisation: unipolar
Pulsed drain current: -40A
Drain-source voltage: -30V
Drain current: -10A
Gate charge: 39nC
On-state resistance: 12.6mΩ
Power dissipation: 2W
Gate-source voltage: ±20V
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UMG8NTR |
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Hersteller: ROHM SEMICONDUCTOR
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88A,SOT353
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC88A; SOT353
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Semiconductor structure: common emitter
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
Category: NPN SMD transistors
Description: Transistor: NPN x2; bipolar; BRT; 50V; 0.1A; 150mW; SC88A,SOT353
Type of transistor: NPN x2
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Case: SC88A; SOT353
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Semiconductor structure: common emitter
Base resistor: 4.7kΩ
Base-emitter resistor: 47kΩ
auf Bestellung 2595 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis |
---|---|
313+ | 0.23 EUR |
421+ | 0.17 EUR |
564+ | 0.13 EUR |
636+ | 0.11 EUR |
1211+ | 0.059 EUR |
1283+ | 0.056 EUR |
BU9880GUL-WE2 |
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Hersteller: ROHM SEMICONDUCTOR
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; 2-wire,I2C; 8kx8bit; 400kHz; serial
Supply voltage: 1.7...5.5V DC
Operating temperature: -40...85°C
Kind of interface: serial
Access time: 5ms
Memory: 64kb EEPROM
Clock frequency: 400kHz
Interface: 2-wire; I2C
Memory organisation: 8kx8bit
Kind of package: reel; tape
Case: VCSP50L1
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
Category: Serial EEPROM memories - integ. circ.
Description: IC: EEPROM memory; 64kbEEPROM; 2-wire,I2C; 8kx8bit; 400kHz; serial
Supply voltage: 1.7...5.5V DC
Operating temperature: -40...85°C
Kind of interface: serial
Access time: 5ms
Memory: 64kb EEPROM
Clock frequency: 400kHz
Interface: 2-wire; I2C
Memory organisation: 8kx8bit
Kind of package: reel; tape
Case: VCSP50L1
Kind of memory: EEPROM
Type of integrated circuit: EEPROM memory
Mounting: SMD
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BAV99HYFHT116 |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Power dissipation: 0.25W
Kind of package: reel; tape
Max. load current: 0.5A
Category: SMD universal diodes
Description: Diode: switching; SMD; 100V; 215mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 100V
Load current: 0.215A
Reverse recovery time: 4ns
Semiconductor structure: double series
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Power dissipation: 0.25W
Kind of package: reel; tape
Max. load current: 0.5A
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MMBZ16VALFHT116 |
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Hersteller: ROHM SEMICONDUCTOR
Category: Protection diodes - arrays
Description: Diode: TVS array; 16V; 1.7A; 40W; double,common anode; SOT23
Case: SOT23
Max. forward impulse current: 1.7A
Max. off-state voltage: 13V
Breakdown voltage: 16V
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Kind of package: reel; tape
Type of diode: TVS array
Mounting: SMD
Leakage current: 50nA
Category: Protection diodes - arrays
Description: Diode: TVS array; 16V; 1.7A; 40W; double,common anode; SOT23
Case: SOT23
Max. forward impulse current: 1.7A
Max. off-state voltage: 13V
Breakdown voltage: 16V
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; double
Kind of package: reel; tape
Type of diode: TVS array
Mounting: SMD
Leakage current: 50nA
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BZX84C13VLYFHT116 |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 13V; SMD; reel,tape; SOT23; single diode; 0.1uA
Case: SOT23
Power dissipation: 0.25W
Tolerance: ±6.5%
Zener voltage: 13V
Application: automotive industry
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 13V; SMD; reel,tape; SOT23; single diode; 0.1uA
Case: SOT23
Power dissipation: 0.25W
Tolerance: ±6.5%
Zener voltage: 13V
Application: automotive industry
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Leakage current: 0.1µA
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BAS40-06HYFHT116 |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 40V; 120mAx2; SOT23; Ufmax: 1V; Ifsm: 0.6A
Type of diode: switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 120mA x2
Semiconductor structure: common anode; double
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Max. load current: 120mA
Category: SMD universal diodes
Description: Diode: switching; SMD; 40V; 120mAx2; SOT23; Ufmax: 1V; Ifsm: 0.6A
Type of diode: switching
Case: SOT23
Mounting: SMD
Max. off-state voltage: 40V
Load current: 120mA x2
Semiconductor structure: common anode; double
Max. forward voltage: 1V
Max. forward impulse current: 0.6A
Kind of package: reel; tape
Max. load current: 120mA
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BZX84B10VLYFHT116 |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 10V; SMD; reel,tape; SOT23; single diode; 0.2uA
Case: SOT23
Power dissipation: 0.25W
Tolerance: ±2%
Zener voltage: 10V
Application: automotive industry
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Leakage current: 0.2µA
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 10V; SMD; reel,tape; SOT23; single diode; 0.2uA
Case: SOT23
Power dissipation: 0.25W
Tolerance: ±2%
Zener voltage: 10V
Application: automotive industry
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Leakage current: 0.2µA
Produkt ist nicht verfügbar
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BZX84B15VLYFHT116 |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 15V; SMD; reel,tape; SOT23; single diode; 0.1uA
Case: SOT23
Power dissipation: 0.25W
Tolerance: ±2%
Zener voltage: 15V
Application: automotive industry
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 15V; SMD; reel,tape; SOT23; single diode; 0.1uA
Case: SOT23
Power dissipation: 0.25W
Tolerance: ±2%
Zener voltage: 15V
Application: automotive industry
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Leakage current: 0.1µA
Produkt ist nicht verfügbar
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BZX84B16VLYFHT116 |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 16V; SMD; reel,tape; SOT23; single diode; 0.1uA
Case: SOT23
Power dissipation: 0.25W
Tolerance: ±2%
Zener voltage: 16V
Application: automotive industry
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 16V; SMD; reel,tape; SOT23; single diode; 0.1uA
Case: SOT23
Power dissipation: 0.25W
Tolerance: ±2%
Zener voltage: 16V
Application: automotive industry
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Leakage current: 0.1µA
Produkt ist nicht verfügbar
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BZX84B18VLYFHT116 |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 18V; SMD; reel,tape; SOT23; single diode; 0.1uA
Case: SOT23
Power dissipation: 0.25W
Tolerance: ±2%
Zener voltage: 18V
Application: automotive industry
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 18V; SMD; reel,tape; SOT23; single diode; 0.1uA
Case: SOT23
Power dissipation: 0.25W
Tolerance: ±2%
Zener voltage: 18V
Application: automotive industry
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Leakage current: 0.1µA
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BZX84B24VLYFHT116 |
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Hersteller: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 24V; SMD; reel,tape; SOT23; single diode; 0.1uA
Case: SOT23
Power dissipation: 0.25W
Tolerance: ±2%
Zener voltage: 24V
Application: automotive industry
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Leakage current: 0.1µA
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 24V; SMD; reel,tape; SOT23; single diode; 0.1uA
Case: SOT23
Power dissipation: 0.25W
Tolerance: ±2%
Zener voltage: 24V
Application: automotive industry
Semiconductor structure: single diode
Kind of package: reel; tape
Type of diode: Zener
Mounting: SMD
Leakage current: 0.1µA
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