Produkte > ROHM SEMICONDUCTOR > Alle Produkte des Herstellers ROHM SEMICONDUCTOR (107463) > Seite 1782 nach 1792
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
| BD433M5FP2-CZE2 | ROHM SEMICONDUCTOR |
 Category: LDO fixed voltage regulatorsDescription: IC: voltage regulator; 3.3V; 500mA; TO263-3; SMD; -40÷150°C; ±2% Case: TO263-3 Mounting: SMD Operating temperature: -40...150°C Output voltage: 3.3V Number of channels: 1 Tolerance: ±2% Input voltage: 3...42V Output current: 0.5A Type of integrated circuit: voltage regulator Voltage drop: 0.25V |
auf Bestellung 430 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 35 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| BD433S5FP2-CE2 | ROHM SEMICONDUCTOR |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; 500mA; TO263-3; SMD; BD; -40÷150°C; Ch: 1 Case: TO263-3 Mounting: SMD Operating temperature: -40...150°C Number of channels: 1 Manufacturer series: BD Output current: 0.5A Type of integrated circuit: voltage regulator Voltage drop: 0.25V |
auf Bestellung 70 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 44 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| BD433S5WFP2-CE2 | ROHM SEMICONDUCTOR |
Category: LDO fixed voltage regulators Description: IC: voltage regulator; 3.3V; 500mA; TO263-5; SMD; BD; -40÷150°C Case: TO263-5 Mounting: SMD Operating temperature: -40...150°C Output voltage: 3.3V Number of channels: 1 Manufacturer series: BD Output current: 0.5A Type of integrated circuit: voltage regulator Voltage drop: 0.25V |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 44 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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BSS138BKT116 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; 60V; 400mA; 350mW; SOT23-3; ESD Type of transistor: N-MOSFET Drain-source voltage: 60V Drain current: 0.4A Power dissipation: 0.35W Case: SOT23-3 Gate-source voltage: ±20V On-state resistance: 0.68Ω Mounting: SMD Kind of channel: enhancement Version: ESD |
auf Bestellung 10668 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 1208 Stücke Im Einkaufswagen Stück im Wert von UAH |
| BD65496MUV-E2 | ROHM SEMICONDUCTOR |
Category: Power switches - integrated circuits Description: IC: power switch; motor controller; Ch: 1; SMD; -30÷85°C; 2.5÷5.5V Mounting: SMD Supply voltage: 2.5...5.5V Type of integrated circuit: power switch Protection: over current OCP; overheating OTP; undervoltage UVP Operating temperature: -30...85°C Kind of integrated circuit: motor controller Number of channels: 1 On-state resistance: 0.5Ω |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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SP8M4HZGTB | ROHM SEMICONDUCTOR |
Category: Multi channel transistors Description: Transistor: N/P-MOSFET; 30V; 9A; SOP8 Type of transistor: N/P-MOSFET Drain-source voltage: 30V Drain current: 9A Case: SOP8 Gate-source voltage: ±20V Mounting: SMD Kind of channel: enhancement |
auf Bestellung 1220 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 41 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MCR18EZPJ100 | ROHM SEMICONDUCTOR |
Category: SMD resistors Description: Resistor: thick film; 10Ω; SMD; 1206; 250mW; ±5%; -55÷155°C Mounting: SMD Operating temperature: -55...155°C Resistance: 10Ω Power: 0.25W Conform to the norm: AEC-Q200 Case - inch: 1206 Case - mm: 3216 Tolerance: ±5% Type of resistor: thick film |
auf Bestellung 8880 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 3704 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MCR18LEQPFLR100 | ROHM SEMICONDUCTOR |
Category: SMD resistors Description: Resistor: thick film; 100mΩ; 1206; 750mW; ±1%; 3.2x1.6x0.55mm Resistance: 0.1Ω Body dimensions: 3.2x1.6x0.55mm Power: 0.75W Conform to the norm: AEC-Q200 Case - inch: 1206 Case - mm: 3216 Tolerance: ±1% Type of resistor: thick film |
auf Bestellung 4344 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 298 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MCR18SEQPF1001 | ROHM SEMICONDUCTOR |
Category: SMD resistors Description: Resistor: thick film; 1kΩ; 1206; 400mW; ±1%; 3.2x1.6x0.55mm Operating temperature: -55...155°C Resistance: 1kΩ Body dimensions: 3.2x1.6x0.55mm Power: 0.4W Conform to the norm: AEC-Q200 Case - inch: 1206 Case - mm: 3216 Tolerance: ±1% Type of resistor: thick film |
auf Bestellung 4895 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 2778 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IMD2AT108 | ROHM SEMICONDUCTOR |
Category: Complementary transistors Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A Type of transistor: NPN / PNP Polarisation: bipolar Kind of transistor: BRT; complementary pair Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.3W Case: SC74; SOT457 Current gain: 56 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 22kΩ Base-emitter resistor: 22kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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BZX84C3V3LYFHT116 | ROHM SEMICONDUCTOR |
Category: SMD Zener diodes Description: Diode: Zener; 250mW; 3.3V; SMD; SOT23; 5uA Type of diode: Zener Power dissipation: 0.25W Zener voltage: 3.3V Mounting: SMD Tolerance: ±6.06% Case: SOT23 Leakage current: 5µA |
auf Bestellung 1959 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 1292 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MCR03EZPJ393 | ROHM SEMICONDUCTOR |
Category: SMD resistors Description: Resistor: thick film; 39kΩ; 0603; 100mW; ±5%; 1.6x0.8x0.45mm Type of resistor: thick film Resistance: 39kΩ Case - inch: 0603 Case - mm: 1608 Power: 0.1W Tolerance: ±5% Operating temperature: -55...155°C Body dimensions: 1.6x0.8x0.45mm Conform to the norm: AEC-Q200 |
auf Bestellung 47168 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 18519 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BD83A14MUF-ME2 | ROHM SEMICONDUCTOR |
Category: LED drivers Description: IC: driver; boost; LED driver; VQFN24; 5V; PWM; Uin: 4.5÷48V Supply voltage: 4.5...48V Input voltage: 4.5...48V Type of integrated circuit: driver Operating temperature: -40...125°C Integrated circuit features: PWM Application: automotive industry Output voltage: 5V Case: VQFN24 Kind of integrated circuit: LED driver Topology: boost Mounting: SMD |
auf Bestellung 100 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 44 Stücke Im Einkaufswagen Stück im Wert von UAH |
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RUM002N02T2L | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 0.2A; Idm: 0.4A; 150mW; SOT723 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 0.2A Pulsed drain current: 0.4A Power dissipation: 0.15W Case: SOT723 Gate-source voltage: ±8V On-state resistance: 1.2Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Version: ESD |
auf Bestellung 4112 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| SMF18VTR | ROHM SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.2kW; 20V; 6.8A; unidirectional; Ch: 1; 150pF; -65÷150°C Type of diode: TVS Peak pulse power dissipation: 0.2kW Max. off-state voltage: 18V Breakdown voltage: 20V Max. forward impulse current: 6.8A Semiconductor structure: unidirectional Mounting: SMD Leakage current: 0.1µA Capacitance: 0.15nF Number of channels: 1 Operating temperature: -65...150°C |
auf Bestellung 1860 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 299 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| SMF18VTFTR | ROHM SEMICONDUCTOR |
Category: Unidirectional TVS SMD diodes Description: Diode: TVS; 0.2kW; 20V; 6.8A; unidirectional; Ch: 1; 150pF; -65÷150°C Type of diode: TVS Peak pulse power dissipation: 0.2kW Max. off-state voltage: 18V Breakdown voltage: 20V Max. forward impulse current: 6.8A Semiconductor structure: unidirectional Mounting: SMD Capacitance: 0.15nF Number of channels: 1 Operating temperature: -65...150°C |
auf Bestellung 1934 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 632 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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RD3P200SNTL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 80A; 20W; DPAK,TO252 Mounting: SMD Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: DPAK; TO252 On-state resistance: 50mΩ Pulsed drain current: 80A Power dissipation: 20W Gate charge: 55nC Polarisation: unipolar Drain current: 20A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
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RD3L150SNTL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 30A; 20W; DPAK,TO252 Mounting: SMD Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: DPAK; TO252 On-state resistance: 51mΩ Pulsed drain current: 30A Power dissipation: 20W Gate charge: 18nC Polarisation: unipolar Drain current: 15A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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RD3L050SNTL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 5A; Idm: 15A; 15W; DPAK,TO252 Mounting: SMD Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: DPAK; TO252 On-state resistance: 0.14Ω Pulsed drain current: 15A Power dissipation: 15W Gate charge: 8nC Polarisation: unipolar Drain current: 5A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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RD3L080SNTL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 16A; 15W; DPAK,TO252 Mounting: SMD Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: DPAK; TO252 On-state resistance: 109mΩ Pulsed drain current: 16A Power dissipation: 15W Gate charge: 9.4nC Polarisation: unipolar Drain current: 8A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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RD3P050SNTL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 20A; 15W; DPAK,TO252 Mounting: SMD Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: DPAK; TO252 On-state resistance: 0.205Ω Pulsed drain current: 20A Power dissipation: 15W Gate charge: 14nC Polarisation: unipolar Drain current: 5A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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RD3P100SNTL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 20A; 20W; DPAK,TO252 Mounting: SMD Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: DPAK; TO252 On-state resistance: 147mΩ Pulsed drain current: 20A Power dissipation: 20W Gate charge: 18nC Polarisation: unipolar Drain current: 10A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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RD3P175SNTL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 100V; 17.5A; Idm: 35A; 20W Mounting: SMD Drain-source voltage: 100V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: DPAK; TO252 On-state resistance: 119mΩ Pulsed drain current: 35A Power dissipation: 20W Gate charge: 24nC Polarisation: unipolar Drain current: 17.5A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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RD3S075CNTL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 190V; 7.5A; Idm: 30A; 52W; TO252 Mounting: SMD Drain-source voltage: 190V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: TO252 On-state resistance: 347mΩ Pulsed drain current: 30A Power dissipation: 52W Gate charge: 30nC Polarisation: unipolar Drain current: 7.5A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| RD3T075CNTL1 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 7.5A; Idm: 30A; 52W; SOT416F Mounting: SMD Drain-source voltage: 200V Type of transistor: N-MOSFET Gate-source voltage: ±30V Kind of package: reel; tape Case: SOT416F On-state resistance: 0.325Ω Pulsed drain current: 30A Power dissipation: 52W Gate charge: 15nC Polarisation: unipolar Drain current: 7.5A Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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BU45K262G-TL | ROHM SEMICONDUCTOR |
Category: Watchdog and reset circuits Description: IC: supervisor circuit; voltage detector; open drain; SOT23-3 Mounting: SMD Type of integrated circuit: supervisor circuit Operating temperature: -40...105°C Integrated circuit features: watchdog Threshold on-voltage: 2.6V Case: SOT23-3 Kind of integrated circuit: voltage detector Number of channels: 1 Kind of RESET output: open drain Active logical level: low |
auf Bestellung 2605 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 264 Stücke Im Einkaufswagen Stück im Wert von UAH |
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BAV70HMT116 | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: switching; SMD; 90V; 125mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A Type of diode: switching Mounting: SMD Max. off-state voltage: 90V Load current: 0.125A Reverse recovery time: 4ns Semiconductor structure: single diode Case: SOT23 Max. forward voltage: 1.25V Max. forward impulse current: 4A |
auf Bestellung 15630 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 1684 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MCR10SEQPF22R0 | ROHM SEMICONDUCTOR |
Category: SMD resistors Description: Resistor: thick film; 22Ω; 0805; 250mW; ±1%; 2x1.25x0.55mm Type of resistor: thick film Resistance: 22Ω Case - inch: 0805 Case - mm: 2012 Power: 0.25W Tolerance: ±1% Operating temperature: -55...155°C Conform to the norm: AEC-Q200 Body dimensions: 2x1.25x0.55mm |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 3268 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MCR18EZPJ220 | ROHM SEMICONDUCTOR |
Category: SMD resistors Description: Resistor: thick film; 22Ω; 1206; 250mW; ±5%; 3.2x1.6x0.55mm Type of resistor: thick film Resistance: 22Ω Case - inch: 1206 Case - mm: 3216 Power: 0.25W Tolerance: ±5% Operating temperature: -55...155°C Conform to the norm: AEC-Q200 Body dimensions: 3.2x1.6x0.55mm |
auf Bestellung 20276 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 3704 Stücke Im Einkaufswagen Stück im Wert von UAH |
| SML-P12PTT86 | ROHM SEMICONDUCTOR |
Category: SMD colour LEDs Description: LED; green; SMD; 0402; 1x0.6x0.2mm; 20mA; λd: 557÷563nm; Front: flat Type of diode: LED LED colour: green Mounting: SMD Case - inch: 0402 Dimensions: 1x0.6x0.2mm LED current: 20mA Wavelength: 557...563nm LED lens: transparent Front: flat |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 10000 Stücke Im Einkaufswagen Stück im Wert von UAH | |
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ESR10EZPJ3R9 | ROHM SEMICONDUCTOR |
Category: SMD resistors Description: Resistor: thick film; 3.9Ω; 0805; 500mW; ±5%; 2x1.25x0.55mm Type of resistor: thick film Resistance: 3.9Ω Case - inch: 0805 Case - mm: 2012 Power: 0.5W Tolerance: ±5% Operating temperature: -55...155°C Body dimensions: 2x1.25x0.55mm Temperature coefficient: 200ppm/°C Conform to the norm: AEC-Q200 |
auf Bestellung 9946 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 6173 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MCR10SEQPF5101 | ROHM SEMICONDUCTOR |
Category: SMD resistors Description: Resistor: thick film; 5.1kΩ; 0805; 250mW; ±1%; 2x1.25x0.55mm Type of resistor: thick film Resistance: 5.1kΩ Case - inch: 0805 Case - mm: 2012 Power: 0.25W Tolerance: ±1% Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Conform to the norm: AEC-Q200 Body dimensions: 2x1.25x0.55mm |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 3268 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MCR18SEQPF1601 | ROHM SEMICONDUCTOR |
Category: SMD resistors Description: Resistor: thick film; 1.6kΩ; 1206; 400mW; ±1%; -55÷155°C; 100ppm/°C Type of resistor: thick film Resistance: 1.6kΩ Case - inch: 1206 Case - mm: 3216 Power: 0.4W Tolerance: ±1% Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Conform to the norm: AEC-Q200 |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 2778 Stücke Im Einkaufswagen Stück im Wert von UAH |
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ESR18EZPF1601 | ROHM SEMICONDUCTOR |
Category: SMD resistors Description: Resistor: thick film; 1.6kΩ; SMD; 1206; 500mW; ±1%; 3.2x1.6x0.55mm Type of resistor: thick film Resistance: 1.6kΩ Mounting: SMD Case - inch: 1206 Case - mm: 3216 Power: 0.5W Tolerance: ±1% Operating temperature: -55...155°C Conform to the norm: AEC-Q200 Body dimensions: 3.2x1.6x0.55mm |
auf Bestellung 20000 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 2778 Stücke Im Einkaufswagen Stück im Wert von UAH |
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SFR18EZPF1101 | ROHM SEMICONDUCTOR |
Category: SMD resistors Description: Resistor: thick film; 1.1kΩ; 1206; 250mW; ±1%; SFR; 3.2x1.6x0.55mm Type of resistor: thick film Resistance: 1.1kΩ Case - inch: 1206 Case - mm: 3216 Power: 0.25W Tolerance: ±1% Operating temperature: -55...155°C Temperature coefficient: 100ppm/°C Body dimensions: 3.2x1.6x0.55mm Conform to the norm: AEC-Q200 Manufacturer series: SFR |
auf Bestellung 5000 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 2315 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MMBZ36VALYFHT116 | ROHM SEMICONDUCTOR |
Category: Protection diodes - arrays Description: 780mA; 0.04kW; SOT23-3; Ch: 2 Peak pulse power dissipation: 40W Max. off-state voltage: 28V Max. forward impulse current: 780mA Case: SOT23-3 Mounting: SMD Leakage current: 5nA Capacitance: 32pF Number of channels: 2 Application: automotive industry |
auf Bestellung 2990 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 625 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MMBZ18VALYFHT116 | ROHM SEMICONDUCTOR |
Category: Protection diodes - arrays Description: 1.6A; 0.04kW; unidirectional,common anode; SOT23-3; Ch: 2 Max. forward impulse current: 1.6A Peak pulse power dissipation: 40W Semiconductor structure: common anode; unidirectional Mounting: SMD Case: SOT23-3 Max. off-state voltage: 14.5V Leakage current: 5nA Number of channels: 2 Application: automotive industry Capacitance: 60pF |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 625 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MMBZ18VALYT116 | ROHM SEMICONDUCTOR |
Category: Protection diodes - arrays Description: 1.6A; 0.04kW; bidirectional; SOT23-3; Ch: 2 Max. forward impulse current: 1.6A Peak pulse power dissipation: 40W Semiconductor structure: bidirectional Mounting: SMD Case: SOT23-3 Max. off-state voltage: 14.5V Leakage current: 5nA Number of channels: 2 Capacitance: 60pF |
auf Bestellung 4033 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 731 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MMBZ5V6ALT116 | ROHM SEMICONDUCTOR |
Category: Protection diodes - arrays Description: 5.32V; 3A; 0.024kW; unidirectional; SOT23-3; Ch: 2 Breakdown voltage: 5.32V Max. forward impulse current: 3A Peak pulse power dissipation: 24W Semiconductor structure: unidirectional Mounting: SMD Case: SOT23-3 Max. off-state voltage: 3V Number of channels: 2 Capacitance: 0.23nF |
auf Bestellung 11707 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 897 Stücke Im Einkaufswagen Stück im Wert von UAH |
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MMBZ5V6ALYT116 | ROHM SEMICONDUCTOR |
Category: Protection diodes - arrays Description: 3A; 0.024kW; unidirectional,common anode; SOT23-3; Ch: 2 Max. forward impulse current: 3A Peak pulse power dissipation: 24W Semiconductor structure: common anode; unidirectional Mounting: SMD Case: SOT23-3 Max. off-state voltage: 3V Leakage current: 5µA Number of channels: 2 Capacitance: 0.23nF |
auf Bestellung 1495 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 731 Stücke Im Einkaufswagen Stück im Wert von UAH |
| RGT50TM65DGC9 | ROHM SEMICONDUCTOR |
Category: SMD IGBT transistors Description: Transistor: IGBT; 650V; 13A; 23W; TO220NFM Mounting: SMD Power dissipation: 23W Gate charge: 49nC Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 75A Type of transistor: IGBT Turn-on time: 65ns Kind of package: tube Case: TO220NFM Turn-off time: 210ns Gate-emitter voltage: ±30V Collector current: 13A Collector-emitter voltage: 650V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| RGTH50TS65DGC11 | ROHM SEMICONDUCTOR |
Category: THT IGBT transistors Description: Transistor: IGBT; 650V; 25A; 87W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 650V Collector current: 25A Power dissipation: 87W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 100A Mounting: THT Gate charge: 49nC Kind of package: tube Turn-on time: 65ns Turn-off time: 172ns Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
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SCS110AGC | ROHM SEMICONDUCTOR |
Category: THT Schottky diodes Description: Diode: Schottky rectifying; SiC; THT; 600V; 10A; TO220AC; 83W; tube Type of diode: Schottky rectifying Technology: SiC Mounting: THT Max. off-state voltage: 0.6kV Load current: 10A Semiconductor structure: single diode Case: TO220AC Max. forward voltage: 1.7V Max. load current: 42A Max. forward impulse current: 160A Power dissipation: 83W Kind of package: tube Heatsink thickness: max. 1.27mm |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| RB540VM-30TE-17 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 30V; 200mA Type of diode: Schottky rectifying Max. off-state voltage: 30V Max. forward impulse current: 1A Mounting: SMD Leakage current: 0.5µA Max. forward voltage: 0.45V Load current: 0.2A |
auf Bestellung 8054 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 1356 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| RB540VM-40TE-17 | ROHM SEMICONDUCTOR |
Category: SMD Schottky diodes Description: Diode: Schottky rectifying; SMD; 40V; 200mA Type of diode: Schottky rectifying Max. off-state voltage: 40V Max. forward impulse current: 1A Mounting: SMD Leakage current: 15µA Max. forward voltage: 0.71V Load current: 0.2A |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 1462 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| RFN1VWM2STFTR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 25ns; Ufmax: 930mV; Ifsm: 20A Load current: 1A Leakage current: 1µA Type of diode: rectifying Reverse recovery time: 25ns Mounting: SMD Max. forward impulse current: 20A Max. forward voltage: 0.93V Max. off-state voltage: 200V |
auf Bestellung 1065 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 395 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| RFN1VWM2STR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 1A; 25ns; Ufmax: 930mV; Ifsm: 20A Load current: 1A Max. load current: 1A Leakage current: 1µA Type of diode: rectifying Reverse recovery time: 25ns Mounting: SMD Max. forward impulse current: 20A Max. forward voltage: 0.93V Max. off-state voltage: 200V |
auf Bestellung 2941 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 460 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| RFN2VWM2STFTR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 2A; 25ns; Ufmax: 990mV; Ifsm: 20A Load current: 2A Semiconductor structure: single diode Leakage current: 1µA Type of diode: rectifying Reverse recovery time: 25ns Mounting: SMD Max. forward impulse current: 20A Max. forward voltage: 0.99V Max. off-state voltage: 200V |
auf Bestellung 2331 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 235 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| RFN2VWM2STR | ROHM SEMICONDUCTOR |
Category: SMD universal diodes Description: Diode: rectifying; SMD; 200V; 2A; 25ns; Ufmax: 990mV; Ifsm: 20A Load current: 2A Max. load current: 2A Semiconductor structure: single diode Leakage current: 1µA Type of diode: rectifying Reverse recovery time: 25ns Mounting: SMD Max. forward impulse current: 20A Max. forward voltage: 0.99V Max. off-state voltage: 200V |
auf Bestellung 2763 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 259 Stücke Im Einkaufswagen Stück im Wert von UAH | |
|
|
MCR10EZPJ202 | ROHM SEMICONDUCTOR |
Category: SMD resistors Description: Resistor: thick film; 2kΩ; 0805; 125mW; ±5%; -55÷155°C Type of resistor: thick film Resistance: 2kΩ Case - inch: 0805 Case - mm: 2012 Power: 0.125W Tolerance: ±5% Operating temperature: -55...155°C Conform to the norm: AEC-Q200 |
auf Bestellung 9288 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 9260 Stücke Im Einkaufswagen Stück im Wert von UAH |
|
|
SDR10EZPJ202 | ROHM SEMICONDUCTOR |
Category: SMD resistors Description: Resistor: thick film; 2kΩ; 0805; 660mW,667mW; ±5%; 2x1.25x0.55mm Type of resistor: thick film Resistance: 2kΩ Case - inch: 0805 Case - mm: 2012 Power: 0.66W; 667mW Tolerance: ±5% Operating temperature: -55...155°C Temperature coefficient: 200ppm/°C Body dimensions: 2x1.25x0.55mm Conform to the norm: AEC-Q200 |
auf Bestellung 4710 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 2646 Stücke Im Einkaufswagen Stück im Wert von UAH |
 |
DTA114YKAT146 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346 Type of transistor: PNP Polarisation: bipolar Kind of transistor: BRT Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.2W Case: SC59; SOT346 Mounting: SMD Kind of package: reel; tape Frequency: 250MHz Base resistor: 10kΩ Base-emitter resistor: 47kΩ |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| DTA114YE3HZGTL | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 100mA; 150mW; 10kΩ Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Mounting: SMD Frequency: 250MHz Base resistor: 10kΩ Current gain: 68 |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 1462 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DTA114YEBTL | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 100mA; 150mW; 10kΩ Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Mounting: SMD Frequency: 250MHz Base resistor: 10kΩ |
auf Bestellung 4783 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 1588 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DTA114YMFHAT2L | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 100mA; 150mW; 10kΩ Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Power dissipation: 0.15W Mounting: SMD Frequency: 250MHz Base resistor: 10kΩ |
auf Bestellung 6800 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 1389 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| DTA114YU3HZGT106 | ROHM SEMICONDUCTOR |
Category: PNP SMD transistors Description: Transistor: PNP; bipolar; 50V; 100mA; SOT323F; 10kΩ Type of transistor: PNP Polarisation: bipolar Collector-emitter voltage: 50V Collector current: 0.1A Case: SOT323F Mounting: SMD Frequency: 250MHz Base resistor: 10kΩ |
auf Bestellung 3479 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 1588 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| RRQ045P03HZGTR | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; -30V; -4.5A; 1.25W; TSMT6 Type of transistor: P-MOSFET Drain-source voltage: -30V Drain current: -4.5A Power dissipation: 1.25W Case: TSMT6 Gate-source voltage: ±20V On-state resistance: 35mΩ Mounting: SMD Kind of channel: enhancement |
auf Bestellung 284 Stücke: Lieferzeit 14-21 Tag (e) |
Mindestbestellmenge: 175 Stücke Im Einkaufswagen Stück im Wert von UAH | |
| RJU002N06FRAT106 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3 Mounting: SMD Pulsed drain current: 0.8A Power dissipation: 0.2W Polarisation: unipolar Drain current: 0.2A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±12V Kind of package: reel; tape Case: UMT3 On-state resistance: 3.1Ω |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| RHU002N06FRAT106 | ROHM SEMICONDUCTOR |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3 Mounting: SMD Pulsed drain current: 0.8A Power dissipation: 0.2W Gate charge: 2.2nC Polarisation: unipolar Drain current: 0.2A Kind of channel: enhancement Drain-source voltage: 60V Type of transistor: N-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: UMT3 On-state resistance: 4Ω |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |
| RSU002P03T106 | ROHM SEMICONDUCTOR |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -30V; -200mA; Idm: -0.4A; 200mW Mounting: SMD Pulsed drain current: -400mA Power dissipation: 0.2W Polarisation: unipolar Drain current: -200mA Kind of channel: enhancement Drain-source voltage: -30V Type of transistor: P-MOSFET Gate-source voltage: ±20V Kind of package: reel; tape Case: UMT3 On-state resistance: 2.4Ω |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| BD433M5FP2-CZE2 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; 3.3V; 500mA; TO263-3; SMD; -40÷150°C; ±2%
Case: TO263-3
Mounting: SMD
Operating temperature: -40...150°C
Output voltage: 3.3V
Number of channels: 1
Tolerance: ±2%
Input voltage: 3...42V
Output current: 0.5A
Type of integrated circuit: voltage regulator
Voltage drop: 0.25V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; 3.3V; 500mA; TO263-3; SMD; -40÷150°C; ±2%
Case: TO263-3
Mounting: SMD
Operating temperature: -40...150°C
Output voltage: 3.3V
Number of channels: 1
Tolerance: ±2%
Input voltage: 3...42V
Output current: 0.5A
Type of integrated circuit: voltage regulator
Voltage drop: 0.25V
auf Bestellung 430 Stücke:
Lieferzeit 14-21 Tag (e)
| BD433S5FP2-CE2 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; 500mA; TO263-3; SMD; BD; -40÷150°C; Ch: 1
Case: TO263-3
Mounting: SMD
Operating temperature: -40...150°C
Number of channels: 1
Manufacturer series: BD
Output current: 0.5A
Type of integrated circuit: voltage regulator
Voltage drop: 0.25V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; 500mA; TO263-3; SMD; BD; -40÷150°C; Ch: 1
Case: TO263-3
Mounting: SMD
Operating temperature: -40...150°C
Number of channels: 1
Manufacturer series: BD
Output current: 0.5A
Type of integrated circuit: voltage regulator
Voltage drop: 0.25V
auf Bestellung 70 Stücke:
Lieferzeit 14-21 Tag (e)
| BD433S5WFP2-CE2 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; 3.3V; 500mA; TO263-5; SMD; BD; -40÷150°C
Case: TO263-5
Mounting: SMD
Operating temperature: -40...150°C
Output voltage: 3.3V
Number of channels: 1
Manufacturer series: BD
Output current: 0.5A
Type of integrated circuit: voltage regulator
Voltage drop: 0.25V
Category: LDO fixed voltage regulators
Description: IC: voltage regulator; 3.3V; 500mA; TO263-5; SMD; BD; -40÷150°C
Case: TO263-5
Mounting: SMD
Operating temperature: -40...150°C
Output voltage: 3.3V
Number of channels: 1
Manufacturer series: BD
Output current: 0.5A
Type of integrated circuit: voltage regulator
Voltage drop: 0.25V
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
| BSS138BKT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 60V; 400mA; 350mW; SOT23-3; ESD
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 0.4A
Power dissipation: 0.35W
Case: SOT23-3
Gate-source voltage: ±20V
On-state resistance: 0.68Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; 60V; 400mA; 350mW; SOT23-3; ESD
Type of transistor: N-MOSFET
Drain-source voltage: 60V
Drain current: 0.4A
Power dissipation: 0.35W
Case: SOT23-3
Gate-source voltage: ±20V
On-state resistance: 0.68Ω
Mounting: SMD
Kind of channel: enhancement
Version: ESD
auf Bestellung 10668 Stücke:
Lieferzeit 14-21 Tag (e)
| BD65496MUV-E2 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Power switches - integrated circuits
Description: IC: power switch; motor controller; Ch: 1; SMD; -30÷85°C; 2.5÷5.5V
Mounting: SMD
Supply voltage: 2.5...5.5V
Type of integrated circuit: power switch
Protection: over current OCP; overheating OTP; undervoltage UVP
Operating temperature: -30...85°C
Kind of integrated circuit: motor controller
Number of channels: 1
On-state resistance: 0.5Ω
Category: Power switches - integrated circuits
Description: IC: power switch; motor controller; Ch: 1; SMD; -30÷85°C; 2.5÷5.5V
Mounting: SMD
Supply voltage: 2.5...5.5V
Type of integrated circuit: power switch
Protection: over current OCP; overheating OTP; undervoltage UVP
Operating temperature: -30...85°C
Kind of integrated circuit: motor controller
Number of channels: 1
On-state resistance: 0.5Ω
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| SP8M4HZGTB |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; 30V; 9A; SOP8
Type of transistor: N/P-MOSFET
Drain-source voltage: 30V
Drain current: 9A
Case: SOP8
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N/P-MOSFET; 30V; 9A; SOP8
Type of transistor: N/P-MOSFET
Drain-source voltage: 30V
Drain current: 9A
Case: SOP8
Gate-source voltage: ±20V
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 1220 Stücke:
Lieferzeit 14-21 Tag (e)
| MCR18EZPJ100 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD resistors
Description: Resistor: thick film; 10Ω; SMD; 1206; 250mW; ±5%; -55÷155°C
Mounting: SMD
Operating temperature: -55...155°C
Resistance: 10Ω
Power: 0.25W
Conform to the norm: AEC-Q200
Case - inch: 1206
Case - mm: 3216
Tolerance: ±5%
Type of resistor: thick film
Category: SMD resistors
Description: Resistor: thick film; 10Ω; SMD; 1206; 250mW; ±5%; -55÷155°C
Mounting: SMD
Operating temperature: -55...155°C
Resistance: 10Ω
Power: 0.25W
Conform to the norm: AEC-Q200
Case - inch: 1206
Case - mm: 3216
Tolerance: ±5%
Type of resistor: thick film
auf Bestellung 8880 Stücke:
Lieferzeit 14-21 Tag (e)
| MCR18LEQPFLR100 |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD resistors
Description: Resistor: thick film; 100mΩ; 1206; 750mW; ±1%; 3.2x1.6x0.55mm
Resistance: 0.1Ω
Body dimensions: 3.2x1.6x0.55mm
Power: 0.75W
Conform to the norm: AEC-Q200
Case - inch: 1206
Case - mm: 3216
Tolerance: ±1%
Type of resistor: thick film
Category: SMD resistors
Description: Resistor: thick film; 100mΩ; 1206; 750mW; ±1%; 3.2x1.6x0.55mm
Resistance: 0.1Ω
Body dimensions: 3.2x1.6x0.55mm
Power: 0.75W
Conform to the norm: AEC-Q200
Case - inch: 1206
Case - mm: 3216
Tolerance: ±1%
Type of resistor: thick film
auf Bestellung 4344 Stücke:
Lieferzeit 14-21 Tag (e)
| MCR18SEQPF1001 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD resistors
Description: Resistor: thick film; 1kΩ; 1206; 400mW; ±1%; 3.2x1.6x0.55mm
Operating temperature: -55...155°C
Resistance: 1kΩ
Body dimensions: 3.2x1.6x0.55mm
Power: 0.4W
Conform to the norm: AEC-Q200
Case - inch: 1206
Case - mm: 3216
Tolerance: ±1%
Type of resistor: thick film
Category: SMD resistors
Description: Resistor: thick film; 1kΩ; 1206; 400mW; ±1%; 3.2x1.6x0.55mm
Operating temperature: -55...155°C
Resistance: 1kΩ
Body dimensions: 3.2x1.6x0.55mm
Power: 0.4W
Conform to the norm: AEC-Q200
Case - inch: 1206
Case - mm: 3216
Tolerance: ±1%
Type of resistor: thick film
auf Bestellung 4895 Stücke:
Lieferzeit 14-21 Tag (e)
| IMD2AT108 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC74; SOT457
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Category: Complementary transistors
Description: Transistor: NPN / PNP; bipolar; BRT,complementary pair; 50V; 0.1A
Type of transistor: NPN / PNP
Polarisation: bipolar
Kind of transistor: BRT; complementary pair
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.3W
Case: SC74; SOT457
Current gain: 56
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 22kΩ
Base-emitter resistor: 22kΩ
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BZX84C3V3LYFHT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 3.3V; SMD; SOT23; 5uA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±6.06%
Case: SOT23
Leakage current: 5µA
Category: SMD Zener diodes
Description: Diode: Zener; 250mW; 3.3V; SMD; SOT23; 5uA
Type of diode: Zener
Power dissipation: 0.25W
Zener voltage: 3.3V
Mounting: SMD
Tolerance: ±6.06%
Case: SOT23
Leakage current: 5µA
auf Bestellung 1959 Stücke:
Lieferzeit 14-21 Tag (e)
| MCR03EZPJ393 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD resistors
Description: Resistor: thick film; 39kΩ; 0603; 100mW; ±5%; 1.6x0.8x0.45mm
Type of resistor: thick film
Resistance: 39kΩ
Case - inch: 0603
Case - mm: 1608
Power: 0.1W
Tolerance: ±5%
Operating temperature: -55...155°C
Body dimensions: 1.6x0.8x0.45mm
Conform to the norm: AEC-Q200
Category: SMD resistors
Description: Resistor: thick film; 39kΩ; 0603; 100mW; ±5%; 1.6x0.8x0.45mm
Type of resistor: thick film
Resistance: 39kΩ
Case - inch: 0603
Case - mm: 1608
Power: 0.1W
Tolerance: ±5%
Operating temperature: -55...155°C
Body dimensions: 1.6x0.8x0.45mm
Conform to the norm: AEC-Q200
auf Bestellung 47168 Stücke:
Lieferzeit 14-21 Tag (e)
| BD83A14MUF-ME2 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: LED drivers
Description: IC: driver; boost; LED driver; VQFN24; 5V; PWM; Uin: 4.5÷48V
Supply voltage: 4.5...48V
Input voltage: 4.5...48V
Type of integrated circuit: driver
Operating temperature: -40...125°C
Integrated circuit features: PWM
Application: automotive industry
Output voltage: 5V
Case: VQFN24
Kind of integrated circuit: LED driver
Topology: boost
Mounting: SMD
Category: LED drivers
Description: IC: driver; boost; LED driver; VQFN24; 5V; PWM; Uin: 4.5÷48V
Supply voltage: 4.5...48V
Input voltage: 4.5...48V
Type of integrated circuit: driver
Operating temperature: -40...125°C
Integrated circuit features: PWM
Application: automotive industry
Output voltage: 5V
Case: VQFN24
Kind of integrated circuit: LED driver
Topology: boost
Mounting: SMD
auf Bestellung 100 Stücke:
Lieferzeit 14-21 Tag (e)
| RUM002N02T2L |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.2A; Idm: 0.4A; 150mW; SOT723
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.2A
Pulsed drain current: 0.4A
Power dissipation: 0.15W
Case: SOT723
Gate-source voltage: ±8V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 0.2A; Idm: 0.4A; 150mW; SOT723
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 20V
Drain current: 0.2A
Pulsed drain current: 0.4A
Power dissipation: 0.15W
Case: SOT723
Gate-source voltage: ±8V
On-state resistance: 1.2Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Version: ESD
auf Bestellung 4112 Stücke:
Lieferzeit 14-21 Tag (e)
| SMF18VTR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 20V; 6.8A; unidirectional; Ch: 1; 150pF; -65÷150°C
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 18V
Breakdown voltage: 20V
Max. forward impulse current: 6.8A
Semiconductor structure: unidirectional
Mounting: SMD
Leakage current: 0.1µA
Capacitance: 0.15nF
Number of channels: 1
Operating temperature: -65...150°C
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 20V; 6.8A; unidirectional; Ch: 1; 150pF; -65÷150°C
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 18V
Breakdown voltage: 20V
Max. forward impulse current: 6.8A
Semiconductor structure: unidirectional
Mounting: SMD
Leakage current: 0.1µA
Capacitance: 0.15nF
Number of channels: 1
Operating temperature: -65...150°C
auf Bestellung 1860 Stücke:
Lieferzeit 14-21 Tag (e)
| SMF18VTFTR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 20V; 6.8A; unidirectional; Ch: 1; 150pF; -65÷150°C
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 18V
Breakdown voltage: 20V
Max. forward impulse current: 6.8A
Semiconductor structure: unidirectional
Mounting: SMD
Capacitance: 0.15nF
Number of channels: 1
Operating temperature: -65...150°C
Category: Unidirectional TVS SMD diodes
Description: Diode: TVS; 0.2kW; 20V; 6.8A; unidirectional; Ch: 1; 150pF; -65÷150°C
Type of diode: TVS
Peak pulse power dissipation: 0.2kW
Max. off-state voltage: 18V
Breakdown voltage: 20V
Max. forward impulse current: 6.8A
Semiconductor structure: unidirectional
Mounting: SMD
Capacitance: 0.15nF
Number of channels: 1
Operating temperature: -65...150°C
auf Bestellung 1934 Stücke:
Lieferzeit 14-21 Tag (e)
| RD3P200SNTL1 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 80A; 20W; DPAK,TO252
Mounting: SMD
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK; TO252
On-state resistance: 50mΩ
Pulsed drain current: 80A
Power dissipation: 20W
Gate charge: 55nC
Polarisation: unipolar
Drain current: 20A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 20A; Idm: 80A; 20W; DPAK,TO252
Mounting: SMD
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK; TO252
On-state resistance: 50mΩ
Pulsed drain current: 80A
Power dissipation: 20W
Gate charge: 55nC
Polarisation: unipolar
Drain current: 20A
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| RD3L150SNTL1 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 30A; 20W; DPAK,TO252
Mounting: SMD
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK; TO252
On-state resistance: 51mΩ
Pulsed drain current: 30A
Power dissipation: 20W
Gate charge: 18nC
Polarisation: unipolar
Drain current: 15A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 15A; Idm: 30A; 20W; DPAK,TO252
Mounting: SMD
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK; TO252
On-state resistance: 51mΩ
Pulsed drain current: 30A
Power dissipation: 20W
Gate charge: 18nC
Polarisation: unipolar
Drain current: 15A
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RD3L050SNTL1 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5A; Idm: 15A; 15W; DPAK,TO252
Mounting: SMD
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK; TO252
On-state resistance: 0.14Ω
Pulsed drain current: 15A
Power dissipation: 15W
Gate charge: 8nC
Polarisation: unipolar
Drain current: 5A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 5A; Idm: 15A; 15W; DPAK,TO252
Mounting: SMD
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK; TO252
On-state resistance: 0.14Ω
Pulsed drain current: 15A
Power dissipation: 15W
Gate charge: 8nC
Polarisation: unipolar
Drain current: 5A
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RD3L080SNTL1 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 16A; 15W; DPAK,TO252
Mounting: SMD
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK; TO252
On-state resistance: 109mΩ
Pulsed drain current: 16A
Power dissipation: 15W
Gate charge: 9.4nC
Polarisation: unipolar
Drain current: 8A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 8A; Idm: 16A; 15W; DPAK,TO252
Mounting: SMD
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK; TO252
On-state resistance: 109mΩ
Pulsed drain current: 16A
Power dissipation: 15W
Gate charge: 9.4nC
Polarisation: unipolar
Drain current: 8A
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RD3P050SNTL1 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 20A; 15W; DPAK,TO252
Mounting: SMD
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK; TO252
On-state resistance: 0.205Ω
Pulsed drain current: 20A
Power dissipation: 15W
Gate charge: 14nC
Polarisation: unipolar
Drain current: 5A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 5A; Idm: 20A; 15W; DPAK,TO252
Mounting: SMD
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK; TO252
On-state resistance: 0.205Ω
Pulsed drain current: 20A
Power dissipation: 15W
Gate charge: 14nC
Polarisation: unipolar
Drain current: 5A
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RD3P100SNTL1 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 20A; 20W; DPAK,TO252
Mounting: SMD
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK; TO252
On-state resistance: 147mΩ
Pulsed drain current: 20A
Power dissipation: 20W
Gate charge: 18nC
Polarisation: unipolar
Drain current: 10A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 10A; Idm: 20A; 20W; DPAK,TO252
Mounting: SMD
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK; TO252
On-state resistance: 147mΩ
Pulsed drain current: 20A
Power dissipation: 20W
Gate charge: 18nC
Polarisation: unipolar
Drain current: 10A
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RD3P175SNTL1 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17.5A; Idm: 35A; 20W
Mounting: SMD
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK; TO252
On-state resistance: 119mΩ
Pulsed drain current: 35A
Power dissipation: 20W
Gate charge: 24nC
Polarisation: unipolar
Drain current: 17.5A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 100V; 17.5A; Idm: 35A; 20W
Mounting: SMD
Drain-source voltage: 100V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: DPAK; TO252
On-state resistance: 119mΩ
Pulsed drain current: 35A
Power dissipation: 20W
Gate charge: 24nC
Polarisation: unipolar
Drain current: 17.5A
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| RD3S075CNTL1 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 190V; 7.5A; Idm: 30A; 52W; TO252
Mounting: SMD
Drain-source voltage: 190V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: TO252
On-state resistance: 347mΩ
Pulsed drain current: 30A
Power dissipation: 52W
Gate charge: 30nC
Polarisation: unipolar
Drain current: 7.5A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 190V; 7.5A; Idm: 30A; 52W; TO252
Mounting: SMD
Drain-source voltage: 190V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: TO252
On-state resistance: 347mΩ
Pulsed drain current: 30A
Power dissipation: 52W
Gate charge: 30nC
Polarisation: unipolar
Drain current: 7.5A
Kind of channel: enhancement
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| RD3T075CNTL1 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 7.5A; Idm: 30A; 52W; SOT416F
Mounting: SMD
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: SOT416F
On-state resistance: 0.325Ω
Pulsed drain current: 30A
Power dissipation: 52W
Gate charge: 15nC
Polarisation: unipolar
Drain current: 7.5A
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 200V; 7.5A; Idm: 30A; 52W; SOT416F
Mounting: SMD
Drain-source voltage: 200V
Type of transistor: N-MOSFET
Gate-source voltage: ±30V
Kind of package: reel; tape
Case: SOT416F
On-state resistance: 0.325Ω
Pulsed drain current: 30A
Power dissipation: 52W
Gate charge: 15nC
Polarisation: unipolar
Drain current: 7.5A
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| BU45K262G-TL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SOT23-3
Mounting: SMD
Type of integrated circuit: supervisor circuit
Operating temperature: -40...105°C
Integrated circuit features: watchdog
Threshold on-voltage: 2.6V
Case: SOT23-3
Kind of integrated circuit: voltage detector
Number of channels: 1
Kind of RESET output: open drain
Active logical level: low
Category: Watchdog and reset circuits
Description: IC: supervisor circuit; voltage detector; open drain; SOT23-3
Mounting: SMD
Type of integrated circuit: supervisor circuit
Operating temperature: -40...105°C
Integrated circuit features: watchdog
Threshold on-voltage: 2.6V
Case: SOT23-3
Kind of integrated circuit: voltage detector
Number of channels: 1
Kind of RESET output: open drain
Active logical level: low
auf Bestellung 2605 Stücke:
Lieferzeit 14-21 Tag (e)
| BAV70HMT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: switching; SMD; 90V; 125mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 90V
Load current: 0.125A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
Category: SMD universal diodes
Description: Diode: switching; SMD; 90V; 125mA; 4ns; SOT23; Ufmax: 1.25V; Ifsm: 4A
Type of diode: switching
Mounting: SMD
Max. off-state voltage: 90V
Load current: 0.125A
Reverse recovery time: 4ns
Semiconductor structure: single diode
Case: SOT23
Max. forward voltage: 1.25V
Max. forward impulse current: 4A
auf Bestellung 15630 Stücke:
Lieferzeit 14-21 Tag (e)
| MCR10SEQPF22R0 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD resistors
Description: Resistor: thick film; 22Ω; 0805; 250mW; ±1%; 2x1.25x0.55mm
Type of resistor: thick film
Resistance: 22Ω
Case - inch: 0805
Case - mm: 2012
Power: 0.25W
Tolerance: ±1%
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Body dimensions: 2x1.25x0.55mm
Category: SMD resistors
Description: Resistor: thick film; 22Ω; 0805; 250mW; ±1%; 2x1.25x0.55mm
Type of resistor: thick film
Resistance: 22Ω
Case - inch: 0805
Case - mm: 2012
Power: 0.25W
Tolerance: ±1%
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Body dimensions: 2x1.25x0.55mm
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| MCR18EZPJ220 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD resistors
Description: Resistor: thick film; 22Ω; 1206; 250mW; ±5%; 3.2x1.6x0.55mm
Type of resistor: thick film
Resistance: 22Ω
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±5%
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Body dimensions: 3.2x1.6x0.55mm
Category: SMD resistors
Description: Resistor: thick film; 22Ω; 1206; 250mW; ±5%; 3.2x1.6x0.55mm
Type of resistor: thick film
Resistance: 22Ω
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±5%
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Body dimensions: 3.2x1.6x0.55mm
auf Bestellung 20276 Stücke:
Lieferzeit 14-21 Tag (e)
| SML-P12PTT86 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD colour LEDs
Description: LED; green; SMD; 0402; 1x0.6x0.2mm; 20mA; λd: 557÷563nm; Front: flat
Type of diode: LED
LED colour: green
Mounting: SMD
Case - inch: 0402
Dimensions: 1x0.6x0.2mm
LED current: 20mA
Wavelength: 557...563nm
LED lens: transparent
Front: flat
Category: SMD colour LEDs
Description: LED; green; SMD; 0402; 1x0.6x0.2mm; 20mA; λd: 557÷563nm; Front: flat
Type of diode: LED
LED colour: green
Mounting: SMD
Case - inch: 0402
Dimensions: 1x0.6x0.2mm
LED current: 20mA
Wavelength: 557...563nm
LED lens: transparent
Front: flat
Produkt ist nicht verfügbar
Mindestbestellmenge: 10000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| ESR10EZPJ3R9 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD resistors
Description: Resistor: thick film; 3.9Ω; 0805; 500mW; ±5%; 2x1.25x0.55mm
Type of resistor: thick film
Resistance: 3.9Ω
Case - inch: 0805
Case - mm: 2012
Power: 0.5W
Tolerance: ±5%
Operating temperature: -55...155°C
Body dimensions: 2x1.25x0.55mm
Temperature coefficient: 200ppm/°C
Conform to the norm: AEC-Q200
Category: SMD resistors
Description: Resistor: thick film; 3.9Ω; 0805; 500mW; ±5%; 2x1.25x0.55mm
Type of resistor: thick film
Resistance: 3.9Ω
Case - inch: 0805
Case - mm: 2012
Power: 0.5W
Tolerance: ±5%
Operating temperature: -55...155°C
Body dimensions: 2x1.25x0.55mm
Temperature coefficient: 200ppm/°C
Conform to the norm: AEC-Q200
auf Bestellung 9946 Stücke:
Lieferzeit 14-21 Tag (e)
| MCR10SEQPF5101 |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD resistors
Description: Resistor: thick film; 5.1kΩ; 0805; 250mW; ±1%; 2x1.25x0.55mm
Type of resistor: thick film
Resistance: 5.1kΩ
Case - inch: 0805
Case - mm: 2012
Power: 0.25W
Tolerance: ±1%
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Body dimensions: 2x1.25x0.55mm
Category: SMD resistors
Description: Resistor: thick film; 5.1kΩ; 0805; 250mW; ±1%; 2x1.25x0.55mm
Type of resistor: thick film
Resistance: 5.1kΩ
Case - inch: 0805
Case - mm: 2012
Power: 0.25W
Tolerance: ±1%
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Body dimensions: 2x1.25x0.55mm
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| MCR18SEQPF1601 |
Hersteller: ROHM SEMICONDUCTOR
Category: SMD resistors
Description: Resistor: thick film; 1.6kΩ; 1206; 400mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Resistance: 1.6kΩ
Case - inch: 1206
Case - mm: 3216
Power: 0.4W
Tolerance: ±1%
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
Category: SMD resistors
Description: Resistor: thick film; 1.6kΩ; 1206; 400mW; ±1%; -55÷155°C; 100ppm/°C
Type of resistor: thick film
Resistance: 1.6kΩ
Case - inch: 1206
Case - mm: 3216
Power: 0.4W
Tolerance: ±1%
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Conform to the norm: AEC-Q200
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| ESR18EZPF1601 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD resistors
Description: Resistor: thick film; 1.6kΩ; SMD; 1206; 500mW; ±1%; 3.2x1.6x0.55mm
Type of resistor: thick film
Resistance: 1.6kΩ
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Power: 0.5W
Tolerance: ±1%
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Body dimensions: 3.2x1.6x0.55mm
Category: SMD resistors
Description: Resistor: thick film; 1.6kΩ; SMD; 1206; 500mW; ±1%; 3.2x1.6x0.55mm
Type of resistor: thick film
Resistance: 1.6kΩ
Mounting: SMD
Case - inch: 1206
Case - mm: 3216
Power: 0.5W
Tolerance: ±1%
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Body dimensions: 3.2x1.6x0.55mm
auf Bestellung 20000 Stücke:
Lieferzeit 14-21 Tag (e)
| SFR18EZPF1101 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD resistors
Description: Resistor: thick film; 1.1kΩ; 1206; 250mW; ±1%; SFR; 3.2x1.6x0.55mm
Type of resistor: thick film
Resistance: 1.1kΩ
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±1%
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Body dimensions: 3.2x1.6x0.55mm
Conform to the norm: AEC-Q200
Manufacturer series: SFR
Category: SMD resistors
Description: Resistor: thick film; 1.1kΩ; 1206; 250mW; ±1%; SFR; 3.2x1.6x0.55mm
Type of resistor: thick film
Resistance: 1.1kΩ
Case - inch: 1206
Case - mm: 3216
Power: 0.25W
Tolerance: ±1%
Operating temperature: -55...155°C
Temperature coefficient: 100ppm/°C
Body dimensions: 3.2x1.6x0.55mm
Conform to the norm: AEC-Q200
Manufacturer series: SFR
auf Bestellung 5000 Stücke:
Lieferzeit 14-21 Tag (e)
| MMBZ36VALYFHT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Protection diodes - arrays
Description: 780mA; 0.04kW; SOT23-3; Ch: 2
Peak pulse power dissipation: 40W
Max. off-state voltage: 28V
Max. forward impulse current: 780mA
Case: SOT23-3
Mounting: SMD
Leakage current: 5nA
Capacitance: 32pF
Number of channels: 2
Application: automotive industry
Category: Protection diodes - arrays
Description: 780mA; 0.04kW; SOT23-3; Ch: 2
Peak pulse power dissipation: 40W
Max. off-state voltage: 28V
Max. forward impulse current: 780mA
Case: SOT23-3
Mounting: SMD
Leakage current: 5nA
Capacitance: 32pF
Number of channels: 2
Application: automotive industry
auf Bestellung 2990 Stücke:
Lieferzeit 14-21 Tag (e)
| MMBZ18VALYFHT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Protection diodes - arrays
Description: 1.6A; 0.04kW; unidirectional,common anode; SOT23-3; Ch: 2
Max. forward impulse current: 1.6A
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; unidirectional
Mounting: SMD
Case: SOT23-3
Max. off-state voltage: 14.5V
Leakage current: 5nA
Number of channels: 2
Application: automotive industry
Capacitance: 60pF
Category: Protection diodes - arrays
Description: 1.6A; 0.04kW; unidirectional,common anode; SOT23-3; Ch: 2
Max. forward impulse current: 1.6A
Peak pulse power dissipation: 40W
Semiconductor structure: common anode; unidirectional
Mounting: SMD
Case: SOT23-3
Max. off-state voltage: 14.5V
Leakage current: 5nA
Number of channels: 2
Application: automotive industry
Capacitance: 60pF
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| MMBZ18VALYT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Protection diodes - arrays
Description: 1.6A; 0.04kW; bidirectional; SOT23-3; Ch: 2
Max. forward impulse current: 1.6A
Peak pulse power dissipation: 40W
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOT23-3
Max. off-state voltage: 14.5V
Leakage current: 5nA
Number of channels: 2
Capacitance: 60pF
Category: Protection diodes - arrays
Description: 1.6A; 0.04kW; bidirectional; SOT23-3; Ch: 2
Max. forward impulse current: 1.6A
Peak pulse power dissipation: 40W
Semiconductor structure: bidirectional
Mounting: SMD
Case: SOT23-3
Max. off-state voltage: 14.5V
Leakage current: 5nA
Number of channels: 2
Capacitance: 60pF
auf Bestellung 4033 Stücke:
Lieferzeit 14-21 Tag (e)
| MMBZ5V6ALT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Protection diodes - arrays
Description: 5.32V; 3A; 0.024kW; unidirectional; SOT23-3; Ch: 2
Breakdown voltage: 5.32V
Max. forward impulse current: 3A
Peak pulse power dissipation: 24W
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23-3
Max. off-state voltage: 3V
Number of channels: 2
Capacitance: 0.23nF
Category: Protection diodes - arrays
Description: 5.32V; 3A; 0.024kW; unidirectional; SOT23-3; Ch: 2
Breakdown voltage: 5.32V
Max. forward impulse current: 3A
Peak pulse power dissipation: 24W
Semiconductor structure: unidirectional
Mounting: SMD
Case: SOT23-3
Max. off-state voltage: 3V
Number of channels: 2
Capacitance: 0.23nF
auf Bestellung 11707 Stücke:
Lieferzeit 14-21 Tag (e)
| MMBZ5V6ALYT116 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: Protection diodes - arrays
Description: 3A; 0.024kW; unidirectional,common anode; SOT23-3; Ch: 2
Max. forward impulse current: 3A
Peak pulse power dissipation: 24W
Semiconductor structure: common anode; unidirectional
Mounting: SMD
Case: SOT23-3
Max. off-state voltage: 3V
Leakage current: 5µA
Number of channels: 2
Capacitance: 0.23nF
Category: Protection diodes - arrays
Description: 3A; 0.024kW; unidirectional,common anode; SOT23-3; Ch: 2
Max. forward impulse current: 3A
Peak pulse power dissipation: 24W
Semiconductor structure: common anode; unidirectional
Mounting: SMD
Case: SOT23-3
Max. off-state voltage: 3V
Leakage current: 5µA
Number of channels: 2
Capacitance: 0.23nF
auf Bestellung 1495 Stücke:
Lieferzeit 14-21 Tag (e)
| RGT50TM65DGC9 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 13A; 23W; TO220NFM
Mounting: SMD
Power dissipation: 23W
Gate charge: 49nC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 75A
Type of transistor: IGBT
Turn-on time: 65ns
Kind of package: tube
Case: TO220NFM
Turn-off time: 210ns
Gate-emitter voltage: ±30V
Collector current: 13A
Collector-emitter voltage: 650V
Category: SMD IGBT transistors
Description: Transistor: IGBT; 650V; 13A; 23W; TO220NFM
Mounting: SMD
Power dissipation: 23W
Gate charge: 49nC
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 75A
Type of transistor: IGBT
Turn-on time: 65ns
Kind of package: tube
Case: TO220NFM
Turn-off time: 210ns
Gate-emitter voltage: ±30V
Collector current: 13A
Collector-emitter voltage: 650V
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| RGTH50TS65DGC11 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 87W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 87W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 172ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 650V; 25A; 87W; TO247-3
Type of transistor: IGBT
Collector-emitter voltage: 650V
Collector current: 25A
Power dissipation: 87W
Case: TO247-3
Gate-emitter voltage: ±30V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Turn-on time: 65ns
Turn-off time: 172ns
Features of semiconductor devices: integrated anti-parallel diode
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| SCS110AGC |
|
Hersteller: ROHM SEMICONDUCTOR
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 10A; TO220AC; 83W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. load current: 42A
Max. forward impulse current: 160A
Power dissipation: 83W
Kind of package: tube
Heatsink thickness: max. 1.27mm
Category: THT Schottky diodes
Description: Diode: Schottky rectifying; SiC; THT; 600V; 10A; TO220AC; 83W; tube
Type of diode: Schottky rectifying
Technology: SiC
Mounting: THT
Max. off-state voltage: 0.6kV
Load current: 10A
Semiconductor structure: single diode
Case: TO220AC
Max. forward voltage: 1.7V
Max. load current: 42A
Max. forward impulse current: 160A
Power dissipation: 83W
Kind of package: tube
Heatsink thickness: max. 1.27mm
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| RB540VM-30TE-17 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 200mA
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward impulse current: 1A
Mounting: SMD
Leakage current: 0.5µA
Max. forward voltage: 0.45V
Load current: 0.2A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 30V; 200mA
Type of diode: Schottky rectifying
Max. off-state voltage: 30V
Max. forward impulse current: 1A
Mounting: SMD
Leakage current: 0.5µA
Max. forward voltage: 0.45V
Load current: 0.2A
auf Bestellung 8054 Stücke:
Lieferzeit 14-21 Tag (e)
| RB540VM-40TE-17 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 200mA
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Max. forward impulse current: 1A
Mounting: SMD
Leakage current: 15µA
Max. forward voltage: 0.71V
Load current: 0.2A
Category: SMD Schottky diodes
Description: Diode: Schottky rectifying; SMD; 40V; 200mA
Type of diode: Schottky rectifying
Max. off-state voltage: 40V
Max. forward impulse current: 1A
Mounting: SMD
Leakage current: 15µA
Max. forward voltage: 0.71V
Load current: 0.2A
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| RFN1VWM2STFTR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; Ufmax: 930mV; Ifsm: 20A
Load current: 1A
Leakage current: 1µA
Type of diode: rectifying
Reverse recovery time: 25ns
Mounting: SMD
Max. forward impulse current: 20A
Max. forward voltage: 0.93V
Max. off-state voltage: 200V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; Ufmax: 930mV; Ifsm: 20A
Load current: 1A
Leakage current: 1µA
Type of diode: rectifying
Reverse recovery time: 25ns
Mounting: SMD
Max. forward impulse current: 20A
Max. forward voltage: 0.93V
Max. off-state voltage: 200V
auf Bestellung 1065 Stücke:
Lieferzeit 14-21 Tag (e)
| RFN1VWM2STR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; Ufmax: 930mV; Ifsm: 20A
Load current: 1A
Max. load current: 1A
Leakage current: 1µA
Type of diode: rectifying
Reverse recovery time: 25ns
Mounting: SMD
Max. forward impulse current: 20A
Max. forward voltage: 0.93V
Max. off-state voltage: 200V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 1A; 25ns; Ufmax: 930mV; Ifsm: 20A
Load current: 1A
Max. load current: 1A
Leakage current: 1µA
Type of diode: rectifying
Reverse recovery time: 25ns
Mounting: SMD
Max. forward impulse current: 20A
Max. forward voltage: 0.93V
Max. off-state voltage: 200V
auf Bestellung 2941 Stücke:
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| RFN2VWM2STFTR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 25ns; Ufmax: 990mV; Ifsm: 20A
Load current: 2A
Semiconductor structure: single diode
Leakage current: 1µA
Type of diode: rectifying
Reverse recovery time: 25ns
Mounting: SMD
Max. forward impulse current: 20A
Max. forward voltage: 0.99V
Max. off-state voltage: 200V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 25ns; Ufmax: 990mV; Ifsm: 20A
Load current: 2A
Semiconductor structure: single diode
Leakage current: 1µA
Type of diode: rectifying
Reverse recovery time: 25ns
Mounting: SMD
Max. forward impulse current: 20A
Max. forward voltage: 0.99V
Max. off-state voltage: 200V
auf Bestellung 2331 Stücke:
Lieferzeit 14-21 Tag (e)
| RFN2VWM2STR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 25ns; Ufmax: 990mV; Ifsm: 20A
Load current: 2A
Max. load current: 2A
Semiconductor structure: single diode
Leakage current: 1µA
Type of diode: rectifying
Reverse recovery time: 25ns
Mounting: SMD
Max. forward impulse current: 20A
Max. forward voltage: 0.99V
Max. off-state voltage: 200V
Category: SMD universal diodes
Description: Diode: rectifying; SMD; 200V; 2A; 25ns; Ufmax: 990mV; Ifsm: 20A
Load current: 2A
Max. load current: 2A
Semiconductor structure: single diode
Leakage current: 1µA
Type of diode: rectifying
Reverse recovery time: 25ns
Mounting: SMD
Max. forward impulse current: 20A
Max. forward voltage: 0.99V
Max. off-state voltage: 200V
auf Bestellung 2763 Stücke:
Lieferzeit 14-21 Tag (e)
| MCR10EZPJ202 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD resistors
Description: Resistor: thick film; 2kΩ; 0805; 125mW; ±5%; -55÷155°C
Type of resistor: thick film
Resistance: 2kΩ
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±5%
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
Category: SMD resistors
Description: Resistor: thick film; 2kΩ; 0805; 125mW; ±5%; -55÷155°C
Type of resistor: thick film
Resistance: 2kΩ
Case - inch: 0805
Case - mm: 2012
Power: 0.125W
Tolerance: ±5%
Operating temperature: -55...155°C
Conform to the norm: AEC-Q200
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Lieferzeit 14-21 Tag (e)
| SDR10EZPJ202 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD resistors
Description: Resistor: thick film; 2kΩ; 0805; 660mW,667mW; ±5%; 2x1.25x0.55mm
Type of resistor: thick film
Resistance: 2kΩ
Case - inch: 0805
Case - mm: 2012
Power: 0.66W; 667mW
Tolerance: ±5%
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
Body dimensions: 2x1.25x0.55mm
Conform to the norm: AEC-Q200
Category: SMD resistors
Description: Resistor: thick film; 2kΩ; 0805; 660mW,667mW; ±5%; 2x1.25x0.55mm
Type of resistor: thick film
Resistance: 2kΩ
Case - inch: 0805
Case - mm: 2012
Power: 0.66W; 667mW
Tolerance: ±5%
Operating temperature: -55...155°C
Temperature coefficient: 200ppm/°C
Body dimensions: 2x1.25x0.55mm
Conform to the norm: AEC-Q200
auf Bestellung 4710 Stücke:
Lieferzeit 14-21 Tag (e)
| DTA114YKAT146 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59; SOT346
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; BRT; 50V; 0.1A; 200mW; SC59,SOT346
Type of transistor: PNP
Polarisation: bipolar
Kind of transistor: BRT
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.2W
Case: SC59; SOT346
Mounting: SMD
Kind of package: reel; tape
Frequency: 250MHz
Base resistor: 10kΩ
Base-emitter resistor: 47kΩ
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| DTA114YE3HZGTL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 100mA; 150mW; 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Mounting: SMD
Frequency: 250MHz
Base resistor: 10kΩ
Current gain: 68
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 100mA; 150mW; 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Mounting: SMD
Frequency: 250MHz
Base resistor: 10kΩ
Current gain: 68
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| DTA114YEBTL |
|
Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 100mA; 150mW; 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Mounting: SMD
Frequency: 250MHz
Base resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 100mA; 150mW; 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Mounting: SMD
Frequency: 250MHz
Base resistor: 10kΩ
auf Bestellung 4783 Stücke:
Lieferzeit 14-21 Tag (e)
| DTA114YMFHAT2L |
|
Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 100mA; 150mW; 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Mounting: SMD
Frequency: 250MHz
Base resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 100mA; 150mW; 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Power dissipation: 0.15W
Mounting: SMD
Frequency: 250MHz
Base resistor: 10kΩ
auf Bestellung 6800 Stücke:
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| DTA114YU3HZGT106 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 100mA; SOT323F; 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT323F
Mounting: SMD
Frequency: 250MHz
Base resistor: 10kΩ
Category: PNP SMD transistors
Description: Transistor: PNP; bipolar; 50V; 100mA; SOT323F; 10kΩ
Type of transistor: PNP
Polarisation: bipolar
Collector-emitter voltage: 50V
Collector current: 0.1A
Case: SOT323F
Mounting: SMD
Frequency: 250MHz
Base resistor: 10kΩ
auf Bestellung 3479 Stücke:
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| RRQ045P03HZGTR |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; -30V; -4.5A; 1.25W; TSMT6
Type of transistor: P-MOSFET
Drain-source voltage: -30V
Drain current: -4.5A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Kind of channel: enhancement
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; -30V; -4.5A; 1.25W; TSMT6
Type of transistor: P-MOSFET
Drain-source voltage: -30V
Drain current: -4.5A
Power dissipation: 1.25W
Case: TSMT6
Gate-source voltage: ±20V
On-state resistance: 35mΩ
Mounting: SMD
Kind of channel: enhancement
auf Bestellung 284 Stücke:
Lieferzeit 14-21 Tag (e)
| RJU002N06FRAT106 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3
Mounting: SMD
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Polarisation: unipolar
Drain current: 0.2A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: UMT3
On-state resistance: 3.1Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3
Mounting: SMD
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Polarisation: unipolar
Drain current: 0.2A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±12V
Kind of package: reel; tape
Case: UMT3
On-state resistance: 3.1Ω
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| RHU002N06FRAT106 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3
Mounting: SMD
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Gate charge: 2.2nC
Polarisation: unipolar
Drain current: 0.2A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: UMT3
On-state resistance: 4Ω
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 200mA; Idm: 0.8A; 200mW; UMT3
Mounting: SMD
Pulsed drain current: 0.8A
Power dissipation: 0.2W
Gate charge: 2.2nC
Polarisation: unipolar
Drain current: 0.2A
Kind of channel: enhancement
Drain-source voltage: 60V
Type of transistor: N-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: UMT3
On-state resistance: 4Ω
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| RSU002P03T106 |
|
Hersteller: ROHM SEMICONDUCTOR
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -200mA; Idm: -0.4A; 200mW
Mounting: SMD
Pulsed drain current: -400mA
Power dissipation: 0.2W
Polarisation: unipolar
Drain current: -200mA
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: UMT3
On-state resistance: 2.4Ω
Category: SMD P channel transistors
Description: Transistor: P-MOSFET; unipolar; -30V; -200mA; Idm: -0.4A; 200mW
Mounting: SMD
Pulsed drain current: -400mA
Power dissipation: 0.2W
Polarisation: unipolar
Drain current: -200mA
Kind of channel: enhancement
Drain-source voltage: -30V
Type of transistor: P-MOSFET
Gate-source voltage: ±20V
Kind of package: reel; tape
Case: UMT3
On-state resistance: 2.4Ω
Produkt ist nicht verfügbar
Im Einkaufswagen
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