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| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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SSS6N60A Produktcode: 172151
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zu Favoriten hinzufügen
Lieblingsprodukt
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Fairchild |
Transistoren > MOSFET N-CH Gehäuse: TO-220F Drain-Source-Spannung Uds, V: 600 В Drain-Strom Idd, A: 3,2 А Durchlasswiderstand Rds(on), Ohm: 1,8 Ом Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 350/9,3 Bemerkung: Isoliertes Gehäuse Montage: THT |
auf Bestellung: 71 St.
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SSS6N60A Produktcode: 43341
zu Favoriten hinzufügen
Lieblingsprodukt
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Samsung |
 Transistoren > MOSFET N-CHGehäuse: TO-220F Drain-Source-Spannung Uds, V: 600 V Drain-Strom Idd, A: 3,2 A Durchlasswiderstand Rds(on), Ohm: 1,8 Ohm Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 350/9,3 Bemerkung: Isoliertes Gehäuse Montage: THT |
verfügbar: 6 St.
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STF6N60M2 Produktcode: 155644
zu Favoriten hinzufügen
Lieblingsprodukt
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ST |
Transistoren > MOSFET N-CH Gehäuse: TO-220FP Drain-Source-Spannung Uds, V: 650 В Drain-Strom Idd, A: 4,5 А Durchlasswiderstand Rds(on), Ohm: 1,2 Ом Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 232/8 |
auf Bestellung: 19 St.
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| 6n60 | to-220/f | AAT |
auf Bestellung 5000 Stücke: Lieferzeit 21-28 Tag (e) |
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| 6N60C | FAIRCHILD |
auf Bestellung 88800 Stücke: Lieferzeit 21-28 Tag (e) |
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FCP16N60 | ONSEMI |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 10.1A; Idm: 48A; 167W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 10.1A Pulsed drain current: 48A Power dissipation: 167W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.26Ω Mounting: THT Gate charge: 70nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 18 Stücke: Lieferzeit 14-21 Tag (e) |
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FCP16N60 | onsemi |
MOSFETs 600V N-CH MOSFET SuperFET |
auf Bestellung 961 Stücke: Lieferzeit 10-14 Tag (e) |
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FCP16N60 | onsemi |
Description: MOSFET N-CH 600V 16A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 8A, 10V Power Dissipation (Max): 167W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V |
auf Bestellung 1722 Stücke: Lieferzeit 10-14 Tag (e) |
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FCP16N60N | Fairchild Semiconductor |
Description: POWER FIELD-EFFECT TRANSISTOR, 1 Packaging: Bulk Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 199mOhm @ 8A, 10V Power Dissipation (Max): 134.4W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 52.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 100 V |
auf Bestellung 2653 Stücke: Lieferzeit 10-14 Tag (e) |
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FCPF16N60 | onsemi |
Description: MOSFET N-CH 600V 16A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 8A, 10V Power Dissipation (Max): 37.9W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V |
auf Bestellung 998 Stücke: Lieferzeit 10-14 Tag (e) |
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FCPF16N60 | onsemi |
MOSFETs 600V N-CH SuperFET |
auf Bestellung 343 Stücke: Lieferzeit 10-14 Tag (e) |
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FQB6N60TM | Fairchild Semiconductor |
Description: MOSFET N-CH 600V 6.2A D2PAK Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3.1A, 10V Power Dissipation (Max): 3.13W (Ta), 130W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V |
auf Bestellung 19124 Stücke: Lieferzeit 10-14 Tag (e) |
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FQI6N60CTU | Fairchild Semiconductor |
Description: MOSFET N-CH 600V 5.5A I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 2.75A, 10V Power Dissipation (Max): 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 (I2PAK) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V |
auf Bestellung 1844 Stücke: Lieferzeit 10-14 Tag (e) |
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FQPF6N60 | Fairchild Semiconductor |
Description: MOSFET N-CH 600V 3.6A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.8A, 10V Power Dissipation (Max): 44W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V |
auf Bestellung 887 Stücke: Lieferzeit 10-14 Tag (e) |
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FQPF6N60C | Fairchild Semiconductor |
Description: MOSFET N-CH 600V 5.5A TO220F Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Rds On (Max) @ Id, Vgs: 2Ohm @ 2.75A, 10V Power Dissipation (Max): 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220F-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V |
auf Bestellung 5632 Stücke: Lieferzeit 10-14 Tag (e) |
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HI1206N601R-10 | Laird |
Ferrite Beads High-Freq Solid Ferrite Cable Cores |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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IGD06N60TATMA1 | Infineon |
IGBT 600V 12A 88W TO252-3 TrenchStop -40+175°C IGD06N60TATMA1 Infineon Technologies TIGD06n60t Anzahl je Verpackung: 10 Stücke |
auf Bestellung 80 Stücke: Lieferzeit 7-14 Tag (e) |
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IGD06N60TATMA1 | Infineon Technologies |
Description: IGBT TRENCH FS 600V 12A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A Supplier Device Package: PG-TO252-3-11 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 9ns/130ns Switching Energy: 200µJ Test Condition: 400V, 6A, 23Ohm, 15V Gate Charge: 42 nC Part Status: Active Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 18 A Power - Max: 88 W |
auf Bestellung 4631 Stücke: Lieferzeit 10-14 Tag (e) |
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IGD06N60TATMA1 | Infineon Technologies |
IGBTs HOME APPLIANCES |
auf Bestellung 5590 Stücke: Lieferzeit 10-14 Tag (e) |
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IGD06N60TATMA1 | Infineon Technologies |
Description: IGBT TRENCH FS 600V 12A TO252-3 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A Supplier Device Package: PG-TO252-3-11 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 9ns/130ns Switching Energy: 200µJ Test Condition: 400V, 6A, 23Ohm, 15V Gate Charge: 42 nC Part Status: Active Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 18 A Power - Max: 88 W |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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IGP06N60TXKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3 Type of transistor: IGBT Power dissipation: 88W Case: TO220-3 Mounting: THT Kind of package: tube Collector current: 6A Collector-emitter voltage: 600V Gate-emitter voltage: ±20V |
auf Bestellung 60 Stücke: Lieferzeit 14-21 Tag (e) |
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IGP06N60TXKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 600V 12A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A Supplier Device Package: PG-TO220-3-1 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 9ns/130ns Switching Energy: 200µJ Test Condition: 400V, 6A, 23Ohm, 15V Gate Charge: 42 nC Part Status: Active Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 18 A Power - Max: 88 W |
auf Bestellung 141 Stücke: Lieferzeit 10-14 Tag (e) |
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IKA06N60T | Infineon Technologies |
 IGBTs LOW LOSS DuoPack 600V 6.2A |
auf Bestellung 960 Stücke: Lieferzeit 10-14 Tag (e) |
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IKA06N60TXKSA1 | Infineon Technologies |
Description: IGBT TRENCH FS 600V 10A TO220-3 Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 123 ns Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A Supplier Device Package: PG-TO220-3-31 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 9.4ns/130ns Switching Energy: 200µJ Test Condition: 400V, 6A, 23Ohm, 15V Gate Charge: 42 nC Part Status: Active Current - Collector (Ic) (Max): 10 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 18 A Power - Max: 28 W |
auf Bestellung 183 Stücke: Lieferzeit 10-14 Tag (e) |
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IKB06N60T | Infineon Technologies |
IGBTs LOW LOSS DuoPack 600V 6A |
auf Bestellung 1058 Stücke: Lieferzeit 10-14 Tag (e) |
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IKB06N60TATMA1 | Infineon Technologies |
Description: IGBT TRENCH FS 600V 12A TO263-3 Power - Max: 88 W Current - Collector Pulsed (Icm): 18 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 12 A Part Status: Active Gate Charge: 42 nC Test Condition: 400V, 6A, 23Ohm, 15V Switching Energy: 200µJ Td (on/off) @ 25°C: 9ns/130ns IGBT Type: Trench Field Stop Supplier Device Package: PG-TO263-3-2 Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A Reverse Recovery Time (trr): 123 ns Input Type: Standard Operating Temperature: -40°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
auf Bestellung 973 Stücke: Lieferzeit 10-14 Tag (e) |
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IKB06N60TATMA1 | Infineon Technologies |
IGBTs LOW LOSS DuoPack 600V 6A |
auf Bestellung 870 Stücke: Lieferzeit 10-14 Tag (e) |
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IKD06N60RATMA1 | INFINEON TECHNOLOGIES |
Category: SMD IGBT transistors Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK Type of transistor: IGBT Technology: TRENCHSTOP™ RC Power dissipation: 100W Case: DPAK Mounting: SMD Gate charge: 48nC Kind of package: reel; tape Collector current: 6A Collector-emitter voltage: 600V Features of semiconductor devices: integrated anti-parallel diode Pulsed collector current: 18A Turn-on time: 19ns Turn-off time: 279ns Gate-emitter voltage: ±20V |
auf Bestellung 437 Stücke: Lieferzeit 14-21 Tag (e) |
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IKD06N60RATMA1 | Infineon Technologies |
IGBTs IGBT w/ INTG DIODE 600V 12A |
auf Bestellung 29 Stücke: Lieferzeit 10-14 Tag (e) |
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IKD06N60RF | Infineon |
Transistor IGBT ; 600V; 20V; 12A; 18A; 100W; 4,3V~5,7V; 48nC; -40°C~175°C; IKD06N60RF TIKD06n60rf Anzahl je Verpackung: 10 Stücke |
auf Bestellung 100 Stücke: Lieferzeit 7-14 Tag (e) |
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IKD06N60RF | Infineon Technologies |
IGBTs IGBT PRODUCTS TrenchStop |
auf Bestellung 801 Stücke: Lieferzeit 10-14 Tag (e) |
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IKD06N60RFATMA1 | Infineon Technologies |
IGBTs IGBT PRODUCTS |
auf Bestellung 2087 Stücke: Lieferzeit 10-14 Tag (e) |
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IKD06N60RFATMA1 | Infineon Technologies |
Description: IGBT TRENCH FS 600V 12A TO252-3 Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 48 ns Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A Supplier Device Package: PG-TO252-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 7ns/106ns Switching Energy: 90µJ (on), 90µJ (off) Test Condition: 400V, 6A, 23Ohm, 15V Gate Charge: 48 nC Part Status: Active Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 18 A Power - Max: 100 W |
auf Bestellung 2390 Stücke: Lieferzeit 10-14 Tag (e) |
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IKN06N60RC2ATMA1 | Infineon Technologies |
Description: IGBT 600V 8A SOT223-3 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 42 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 6A Supplier Device Package: PG-SOT223-3 Td (on/off) @ 25°C: 8.8ns/174ns Switching Energy: 151µJ (on), 104µJ (off) Test Condition: 400V, 6A, 49Ohm, 15V Gate Charge: 31 nC Part Status: Active Current - Collector (Ic) (Max): 8 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 18 A Power - Max: 7.2 W |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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IKU06N60R | Infineon Technologies |
Description: IGBT TRENCH 600V 12A TO251-3 Packaging: Bulk Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Input Type: Standard Reverse Recovery Time (trr): 68 ns Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A Supplier Device Package: PG-TO251-3 IGBT Type: Trench Td (on/off) @ 25°C: 12ns/127ns Switching Energy: 330µJ Test Condition: 400V, 6A, 23Ohm, 15V Gate Charge: 48 nC Part Status: Active Current - Collector (Ic) (Max): 12 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 18 A Power - Max: 100 W |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRFIB6N60A | Vishay |
N-MOSFET 600V 5.5A 60W IRFIB6N60A Vishay TIRFIB6n60a Anzahl je Verpackung: 10 Stücke |
auf Bestellung 10 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFIB6N60APBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; 60W; TO220FP Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 3.5A Power dissipation: 60W Case: TO220FP Gate-source voltage: ±30V On-state resistance: 0.75Ω Mounting: THT Gate charge: 49nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 44 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFIB6N60APBF | Vishay Siliconix |
Description: MOSFET N-CH 600V 5.5A TO220-3 Packaging: Tube Package / Case: TO-220-3 Full Pack, Isolated Tab Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc) Rds On (Max) @ Id, Vgs: 750mOhm @ 3.3A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V |
auf Bestellung 754 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFIB6N60APBF | Vishay Semiconductors |
MOSFETs TO220 600V 5.5A N-CH MOSFET |
auf Bestellung 5128 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFA16N60P3 | IXYS |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO263 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Power dissipation: 347W Case: TO263 On-state resistance: 470mΩ Mounting: SMD Gate charge: 36nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 76 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH26N60P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 26A; 460W; TO247-3 Type of transistor: N-MOSFET Technology: PolarHV™ Polarisation: unipolar Drain-source voltage: 600V Drain current: 26A Power dissipation: 460W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.27Ω Mounting: THT Gate charge: 72nC Kind of package: tube Kind of channel: enhancement Reverse recovery time: 200ns |
auf Bestellung 253 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH36N60P | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO247-3 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 36A Power dissipation: 650W Case: TO247-3 On-state resistance: 0.19Ω Mounting: THT Gate charge: 102nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 266 Stücke: Lieferzeit 14-21 Tag (e) |
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IXFH36N60P | IXYS |
MOSFETs 600V 36A |
auf Bestellung 76 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFP16N60P3 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 600V Drain current: 16A Power dissipation: 347W Case: TO220AB On-state resistance: 470mΩ Mounting: THT Gate charge: 36nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 258 Stücke: Lieferzeit 14-21 Tag (e) |
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IXGH36N60B3 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 250W Case: TO247-3 Mounting: THT Gate charge: 80nC Kind of package: tube Collector current: 36A Collector-emitter voltage: 600V Pulsed collector current: 200A Turn-on time: 45ns Turn-off time: 350ns Gate-emitter voltage: ±20V |
auf Bestellung 206 Stücke: Lieferzeit 14-21 Tag (e) |
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IXGH36N60B3 | IXYS |
IGBTs GenX3 600V IGBTs |
auf Bestellung 47 Stücke: Lieferzeit 10-14 Tag (e) |
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IXGH36N60B3C1 | IXYS |
Category: THT IGBT transistors Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3 Type of transistor: IGBT Technology: GenX3™; PT Power dissipation: 250W Case: TO247-3 Mounting: THT Gate charge: 80nC Kind of package: tube Collector current: 36A Collector-emitter voltage: 600V Pulsed collector current: 200A Turn-on time: 47ns Turn-off time: 350ns Gate-emitter voltage: ±20V |
auf Bestellung 1 Stücke: Lieferzeit 14-21 Tag (e) |
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IXTH26N60P | IXYS |
MOSFETs 26.0 Amps 600 V 0.27 Ohm Rds |
auf Bestellung 45 Stücke: Lieferzeit 10-14 Tag (e) |
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NTB6N60 | onsemi |
Description: N-CHANNEL POWER MOSFET Packaging: Bulk Part Status: Active |
auf Bestellung 9939 Stücke: Lieferzeit 10-14 Tag (e) |
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NTB6N60T4 | Motorola |
Description: N-CHANNEL POWER MOSFET Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Tc) Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V Power Dissipation (Max): 142W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 25 V |
auf Bestellung 6400 Stücke: Lieferzeit 10-14 Tag (e) |
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PBES16N60R | TE Connectivity / Alcoswitch |
Emergency Stop Switches / E-Stop Switches PBES16 23.8 RB NO LAMP 1NC 1NC |
auf Bestellung 20 Stücke: Lieferzeit 10-14 Tag (e) |
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PBES16N60R | TE Connectivity ALCOSWITCH Switches |
Description: SWITCH ESTOP TWIST RESET 3A 125V Packaging: Tray Features: Push Marking Current Rating (Amps): 3A (AC), 220mA (DC) Mounting Type: Panel Mount, Front Circuit: SPST-NC x 2 Switch Function: On-Off Operating Temperature: -25°C ~ 70°C Termination Style: Solder, Quick Connect - 0.110" (2.8mm) Ingress Protection: IP65 - Dust Tight, Water Resistant Panel Cutout Dimensions: Circular - 16.00mm Dia Part Status: Active Voltage Rating - AC: 125 V Reset Operation: Twist Voltage Rating - DC: 125 V |
auf Bestellung 36 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHA186N60EF-GE3 | Vishay / Siliconix |
MOSFETs TO220 600V 8.4A N-CH MOSFET |
auf Bestellung 1516 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHB186N60EF-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 600V 8.4A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc) Rds On (Max) @ Id, Vgs: 193mOhm @ 9.5A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 100 V |
auf Bestellung 2659 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHD186N60EF-GE3 | Vishay Semiconductors |
MOSFETs TO252 600V 19A N-CH MOSFET |
auf Bestellung 138 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHD186N60EF-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 600V 19A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Tc) Rds On (Max) @ Id, Vgs: 201mOhm @ 9.5A, 10V Power Dissipation (Max): 156W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 100 V |
auf Bestellung 4215 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHG026N60EF-GE3 | Vishay |
MOSFETs TO247 600V 95A N-CH MOSFET |
auf Bestellung 211 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHG186N60EF-GE3 | Vishay / Siliconix |
MOSFETs TO247 600V 8.4A N-CH MOSFET |
auf Bestellung 332 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHH186N60EF-T1FE3 | Vishay Siliconix |
Description: N-CHANNEL 600V Packaging: Tape & Reel (TR) Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 193mOhm @ 9.5A, 10V Power Dissipation (Max): 114W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 100 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHH186N60EF-T1FE3 | Vishay Siliconix |
Description: N-CHANNEL 600V Packaging: Cut Tape (CT) Operating Temperature: -55°C ~ 150°C Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Tc) Rds On (Max) @ Id, Vgs: 193mOhm @ 9.5A, 10V Power Dissipation (Max): 114W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 100 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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| SSS6N60A Produktcode: 172151
1
zu Favoriten hinzufügen
Lieblingsprodukt
|
Hersteller: Fairchild
Transistoren > MOSFET N-CH
Gehäuse: TO-220F
Drain-Source-Spannung Uds, V: 600 В
Drain-Strom Idd, A: 3,2 А
Durchlasswiderstand Rds(on), Ohm: 1,8 Ом
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 350/9,3
Bemerkung: Isoliertes Gehäuse
Montage: THT
Transistoren > MOSFET N-CH
Gehäuse: TO-220F
Drain-Source-Spannung Uds, V: 600 В
Drain-Strom Idd, A: 3,2 А
Durchlasswiderstand Rds(on), Ohm: 1,8 Ом
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 350/9,3
Bemerkung: Isoliertes Gehäuse
Montage: THT
auf Bestellung: 71 St.
- 71 St. - Lieferzeit 21-28 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 1.37 EUR |
| SSS6N60A Produktcode: 43341
zu Favoriten hinzufügen
Lieblingsprodukt
|
|
Hersteller: Samsung
Transistoren > MOSFET N-CH
Gehäuse: TO-220F
Drain-Source-Spannung Uds, V: 600 V
Drain-Strom Idd, A: 3,2 A
Durchlasswiderstand Rds(on), Ohm: 1,8 Ohm
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 350/9,3
Bemerkung: Isoliertes Gehäuse
Montage: THT
Transistoren > MOSFET N-CH
Gehäuse: TO-220F
Drain-Source-Spannung Uds, V: 600 V
Drain-Strom Idd, A: 3,2 A
Durchlasswiderstand Rds(on), Ohm: 1,8 Ohm
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 350/9,3
Bemerkung: Isoliertes Gehäuse
Montage: THT
verfügbar: 6 St.
- 6 St. - stock Köln
| Anzahl | Privatkunde |
|---|---|
| 1+ | 1.98 EUR |
| 10+ | 1.67 EUR |
| 100+ | 1.04 EUR |
| STF6N60M2 Produktcode: 155644
zu Favoriten hinzufügen
Lieblingsprodukt
|
|
Hersteller: ST
Transistoren > MOSFET N-CH
Gehäuse: TO-220FP
Drain-Source-Spannung Uds, V: 650 В
Drain-Strom Idd, A: 4,5 А
Durchlasswiderstand Rds(on), Ohm: 1,2 Ом
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 232/8
Transistoren > MOSFET N-CH
Gehäuse: TO-220FP
Drain-Source-Spannung Uds, V: 650 В
Drain-Strom Idd, A: 4,5 А
Durchlasswiderstand Rds(on), Ohm: 1,2 Ом
Eingangskapazität Ciss, pF / Gate-Ladung Qg, nC: 232/8
auf Bestellung: 19 St.
- 19 St. - Lieferzeit 21-28 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 1.69 EUR |
| 6n60 |
Hersteller: to-220/f
AAT
AAT
auf Bestellung 5000 Stücke:
Lieferzeit 21-28 Tag (e)
| 6N60C |
Hersteller: FAIRCHILD
auf Bestellung 88800 Stücke:
Lieferzeit 21-28 Tag (e)
| FCP16N60 |
|
Hersteller: ONSEMI
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.1A; Idm: 48A; 167W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.1A
Pulsed drain current: 48A
Power dissipation: 167W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 10.1A; Idm: 48A; 167W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 10.1A
Pulsed drain current: 48A
Power dissipation: 167W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.26Ω
Mounting: THT
Gate charge: 70nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 18 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 15+ | 5.69 EUR |
| 17+ | 5.18 EUR |
| 18+ | 4.74 EUR |
| FCP16N60 |
|
Hersteller: onsemi
MOSFETs 600V N-CH MOSFET SuperFET
MOSFETs 600V N-CH MOSFET SuperFET
auf Bestellung 961 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.61 EUR |
| 10+ | 6.95 EUR |
| 100+ | 5.11 EUR |
| 500+ | 4.55 EUR |
| 1000+ | 4.05 EUR |
| FCP16N60 |
|
Hersteller: onsemi
Description: MOSFET N-CH 600V 16A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 8A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
Description: MOSFET N-CH 600V 16A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 8A, 10V
Power Dissipation (Max): 167W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
auf Bestellung 1722 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.32 EUR |
| 10+ | 6.2 EUR |
| 50+ | 4.87 EUR |
| 100+ | 4.44 EUR |
| 500+ | 3.68 EUR |
| FCP16N60N |
|
Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 8A, 10V
Power Dissipation (Max): 134.4W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 100 V
Description: POWER FIELD-EFFECT TRANSISTOR, 1
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 199mOhm @ 8A, 10V
Power Dissipation (Max): 134.4W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 52.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2170 pF @ 100 V
auf Bestellung 2653 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 85+ | 6.49 EUR |
| FCPF16N60 |
|
Hersteller: onsemi
Description: MOSFET N-CH 600V 16A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 8A, 10V
Power Dissipation (Max): 37.9W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
Description: MOSFET N-CH 600V 16A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 8A, 10V
Power Dissipation (Max): 37.9W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2250 pF @ 25 V
auf Bestellung 998 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.95 EUR |
| 10+ | 6.64 EUR |
| 50+ | 5.21 EUR |
| 100+ | 4.76 EUR |
| 500+ | 3.96 EUR |
| FCPF16N60 |
|
Hersteller: onsemi
MOSFETs 600V N-CH SuperFET
MOSFETs 600V N-CH SuperFET
auf Bestellung 343 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 10.09 EUR |
| 10+ | 5.3 EUR |
| 100+ | 4.82 EUR |
| 500+ | 4.4 EUR |
| FQB6N60TM |
|
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 6.2A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3.1A, 10V
Power Dissipation (Max): 3.13W (Ta), 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Description: MOSFET N-CH 600V 6.2A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3.1A, 10V
Power Dissipation (Max): 3.13W (Ta), 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
auf Bestellung 19124 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 179+ | 3.08 EUR |
| FQI6N60CTU |
|
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 5.5A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2.75A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V
Description: MOSFET N-CH 600V 5.5A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2.75A, 10V
Power Dissipation (Max): 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V
auf Bestellung 1844 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 271+ | 2.03 EUR |
| FQPF6N60 |
|
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 3.6A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.8A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
Description: MOSFET N-CH 600V 3.6A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 1.8A, 10V
Power Dissipation (Max): 44W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1000 pF @ 25 V
auf Bestellung 887 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 202+ | 2.73 EUR |
| FQPF6N60C |
|
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 600V 5.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2.75A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V
Description: MOSFET N-CH 600V 5.5A TO220F
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 2Ohm @ 2.75A, 10V
Power Dissipation (Max): 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 810 pF @ 25 V
auf Bestellung 5632 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 288+ | 1.9 EUR |
| HI1206N601R-10 |
|
Hersteller: Laird
Ferrite Beads High-Freq Solid Ferrite Cable Cores
Ferrite Beads High-Freq Solid Ferrite Cable Cores
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 0.63 EUR |
| 10+ | 0.44 EUR |
| 25+ | 0.39 EUR |
| 50+ | 0.35 EUR |
| 100+ | 0.31 EUR |
| 250+ | 0.26 EUR |
| 500+ | 0.24 EUR |
| IGD06N60TATMA1 |
|
Hersteller: Infineon
IGBT 600V 12A 88W TO252-3 TrenchStop -40+175°C IGD06N60TATMA1 Infineon Technologies TIGD06n60t
Anzahl je Verpackung: 10 Stücke
IGBT 600V 12A 88W TO252-3 TrenchStop -40+175°C IGD06N60TATMA1 Infineon Technologies TIGD06n60t
Anzahl je Verpackung: 10 Stücke
auf Bestellung 80 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 2.32 EUR |
| IGD06N60TATMA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO252-3-11
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 88 W
Description: IGBT TRENCH FS 600V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO252-3-11
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 88 W
auf Bestellung 4631 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.39 EUR |
| 10+ | 2.15 EUR |
| 100+ | 1.44 EUR |
| 500+ | 1.14 EUR |
| 1000+ | 1.05 EUR |
| IGD06N60TATMA1 |
|
Hersteller: Infineon Technologies
IGBTs HOME APPLIANCES
IGBTs HOME APPLIANCES
auf Bestellung 5590 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 3.19 EUR |
| 10+ | 1.87 EUR |
| 100+ | 1.29 EUR |
| 500+ | 1.05 EUR |
| 1000+ | 0.94 EUR |
| 2500+ | 0.9 EUR |
| IGD06N60TATMA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO252-3-11
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 88 W
Description: IGBT TRENCH FS 600V 12A TO252-3
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO252-3-11
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 88 W
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.94 EUR |
| IGP06N60TXKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3
Type of transistor: IGBT
Power dissipation: 88W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 6A
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 6A; 88W; TO220-3
Type of transistor: IGBT
Power dissipation: 88W
Case: TO220-3
Mounting: THT
Kind of package: tube
Collector current: 6A
Collector-emitter voltage: 600V
Gate-emitter voltage: ±20V
auf Bestellung 60 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 59+ | 1.45 EUR |
| 60+ | 1.42 EUR |
| IGP06N60TXKSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO220-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 88 W
Description: IGBT TRENCH FS 600V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO220-3-1
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 88 W
auf Bestellung 141 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.93 EUR |
| 50+ | 1.38 EUR |
| 100+ | 1.23 EUR |
| IKA06N60T |
|
Hersteller: Infineon Technologies
IGBTs LOW LOSS DuoPack 600V 6.2A
IGBTs LOW LOSS DuoPack 600V 6.2A
auf Bestellung 960 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.74 EUR |
| 10+ | 2.48 EUR |
| 100+ | 2.23 EUR |
| 500+ | 1.59 EUR |
| IKA06N60TXKSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 123 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO220-3-31
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9.4ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 28 W
Description: IGBT TRENCH FS 600V 10A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 123 ns
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Supplier Device Package: PG-TO220-3-31
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 9.4ns/130ns
Switching Energy: 200µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 42 nC
Part Status: Active
Current - Collector (Ic) (Max): 10 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 28 W
auf Bestellung 183 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 5.09 EUR |
| 50+ | 2.5 EUR |
| 100+ | 2.25 EUR |
| IKB06N60T |
|
Hersteller: Infineon Technologies
IGBTs LOW LOSS DuoPack 600V 6A
IGBTs LOW LOSS DuoPack 600V 6A
auf Bestellung 1058 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.76 EUR |
| 10+ | 3.03 EUR |
| 100+ | 2.07 EUR |
| 500+ | 1.76 EUR |
| 1000+ | 1.56 EUR |
| 2000+ | 1.48 EUR |
| 5000+ | 1.4 EUR |
| IKB06N60TATMA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 12A TO263-3
Power - Max: 88 W
Current - Collector Pulsed (Icm): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 12 A
Part Status: Active
Gate Charge: 42 nC
Test Condition: 400V, 6A, 23Ohm, 15V
Switching Energy: 200µJ
Td (on/off) @ 25°C: 9ns/130ns
IGBT Type: Trench Field Stop
Supplier Device Package: PG-TO263-3-2
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Reverse Recovery Time (trr): 123 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: IGBT TRENCH FS 600V 12A TO263-3
Power - Max: 88 W
Current - Collector Pulsed (Icm): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 12 A
Part Status: Active
Gate Charge: 42 nC
Test Condition: 400V, 6A, 23Ohm, 15V
Switching Energy: 200µJ
Td (on/off) @ 25°C: 9ns/130ns
IGBT Type: Trench Field Stop
Supplier Device Package: PG-TO263-3-2
Vce(on) (Max) @ Vge, Ic: 2.05V @ 15V, 6A
Reverse Recovery Time (trr): 123 ns
Input Type: Standard
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 973 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 4.69 EUR |
| 10+ | 3.01 EUR |
| 100+ | 2.06 EUR |
| 500+ | 1.65 EUR |
| IKB06N60TATMA1 |
|
Hersteller: Infineon Technologies
IGBTs LOW LOSS DuoPack 600V 6A
IGBTs LOW LOSS DuoPack 600V 6A
auf Bestellung 870 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 4.61 EUR |
| 10+ | 2.98 EUR |
| 100+ | 2.03 EUR |
| 500+ | 1.62 EUR |
| 1000+ | 1.45 EUR |
| 2000+ | 1.4 EUR |
| IKD06N60RATMA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 100W
Case: DPAK
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Collector current: 6A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 18A
Turn-on time: 19ns
Turn-off time: 279ns
Gate-emitter voltage: ±20V
Category: SMD IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 600V; 6A; 100W; DPAK
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Power dissipation: 100W
Case: DPAK
Mounting: SMD
Gate charge: 48nC
Kind of package: reel; tape
Collector current: 6A
Collector-emitter voltage: 600V
Features of semiconductor devices: integrated anti-parallel diode
Pulsed collector current: 18A
Turn-on time: 19ns
Turn-off time: 279ns
Gate-emitter voltage: ±20V
auf Bestellung 437 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 48+ | 1.78 EUR |
| 74+ | 1.15 EUR |
| 103+ | 0.82 EUR |
| IKD06N60RATMA1 |
|
Hersteller: Infineon Technologies
IGBTs IGBT w/ INTG DIODE 600V 12A
IGBTs IGBT w/ INTG DIODE 600V 12A
auf Bestellung 29 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.42 EUR |
| 10+ | 2.26 EUR |
| 100+ | 1.39 EUR |
| 500+ | 1.09 EUR |
| 1000+ | 0.96 EUR |
| 2500+ | 0.81 EUR |
| IKD06N60RF |
|
Hersteller: Infineon
Transistor IGBT ; 600V; 20V; 12A; 18A; 100W; 4,3V~5,7V; 48nC; -40°C~175°C; IKD06N60RF TIKD06n60rf
Anzahl je Verpackung: 10 Stücke
Transistor IGBT ; 600V; 20V; 12A; 18A; 100W; 4,3V~5,7V; 48nC; -40°C~175°C; IKD06N60RF TIKD06n60rf
Anzahl je Verpackung: 10 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 20+ | 2.11 EUR |
| IKD06N60RF |
|
Hersteller: Infineon Technologies
IGBTs IGBT PRODUCTS TrenchStop
IGBTs IGBT PRODUCTS TrenchStop
auf Bestellung 801 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.61 EUR |
| 10+ | 2.26 EUR |
| 100+ | 1.49 EUR |
| 500+ | 1.18 EUR |
| 1000+ | 1.05 EUR |
| 2500+ | 0.96 EUR |
| 5000+ | 0.92 EUR |
| IKD06N60RFATMA1 |
|
Hersteller: Infineon Technologies
IGBTs IGBT PRODUCTS
IGBTs IGBT PRODUCTS
auf Bestellung 2087 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 3.31 EUR |
| 10+ | 2.12 EUR |
| 100+ | 1.42 EUR |
| 500+ | 1.12 EUR |
| 1000+ | 1.02 EUR |
| 2500+ | 0.92 EUR |
| 5000+ | 0.89 EUR |
| IKD06N60RFATMA1 |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH FS 600V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 7ns/106ns
Switching Energy: 90µJ (on), 90µJ (off)
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
Description: IGBT TRENCH FS 600V 12A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 48 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 6A
Supplier Device Package: PG-TO252-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 7ns/106ns
Switching Energy: 90µJ (on), 90µJ (off)
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
auf Bestellung 2390 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.37 EUR |
| 10+ | 2.14 EUR |
| 100+ | 1.44 EUR |
| 500+ | 1.13 EUR |
| 1000+ | 1.04 EUR |
| IKN06N60RC2ATMA1 |
|
Hersteller: Infineon Technologies
Description: IGBT 600V 8A SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 6A
Supplier Device Package: PG-SOT223-3
Td (on/off) @ 25°C: 8.8ns/174ns
Switching Energy: 151µJ (on), 104µJ (off)
Test Condition: 400V, 6A, 49Ohm, 15V
Gate Charge: 31 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 7.2 W
Description: IGBT 600V 8A SOT223-3
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 42 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 6A
Supplier Device Package: PG-SOT223-3
Td (on/off) @ 25°C: 8.8ns/174ns
Switching Energy: 151µJ (on), 104µJ (off)
Test Condition: 400V, 6A, 49Ohm, 15V
Gate Charge: 31 nC
Part Status: Active
Current - Collector (Ic) (Max): 8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 7.2 W
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 9+ | 2.56 EUR |
| 14+ | 1.59 EUR |
| 100+ | 1.06 EUR |
| 500+ | 0.82 EUR |
| 1000+ | 0.75 EUR |
| IKU06N60R |
|
Hersteller: Infineon Technologies
Description: IGBT TRENCH 600V 12A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
Supplier Device Package: PG-TO251-3
IGBT Type: Trench
Td (on/off) @ 25°C: 12ns/127ns
Switching Energy: 330µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
Description: IGBT TRENCH 600V 12A TO251-3
Packaging: Bulk
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Input Type: Standard
Reverse Recovery Time (trr): 68 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 6A
Supplier Device Package: PG-TO251-3
IGBT Type: Trench
Td (on/off) @ 25°C: 12ns/127ns
Switching Energy: 330µJ
Test Condition: 400V, 6A, 23Ohm, 15V
Gate Charge: 48 nC
Part Status: Active
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 18 A
Power - Max: 100 W
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 383+ | 1.43 EUR |
| IRFIB6N60A |
|
Hersteller: Vishay
N-MOSFET 600V 5.5A 60W IRFIB6N60A Vishay TIRFIB6n60a
Anzahl je Verpackung: 10 Stücke
N-MOSFET 600V 5.5A 60W IRFIB6N60A Vishay TIRFIB6n60a
Anzahl je Verpackung: 10 Stücke
auf Bestellung 10 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 3.61 EUR |
| IRFIB6N60APBF |
|
Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; 60W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.5A
Power dissipation: 60W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 3.5A; 60W; TO220FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 3.5A
Power dissipation: 60W
Case: TO220FP
Gate-source voltage: ±30V
On-state resistance: 0.75Ω
Mounting: THT
Gate charge: 49nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 44 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 18+ | 4.95 EUR |
| 24+ | 3.57 EUR |
| IRFIB6N60APBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 5.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 3.3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Description: MOSFET N-CH 600V 5.5A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack, Isolated Tab
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 750mOhm @ 3.3A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
auf Bestellung 754 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.97 EUR |
| 10+ | 6.63 EUR |
| 50+ | 5.19 EUR |
| 100+ | 4.72 EUR |
| 500+ | 3.92 EUR |
| IRFIB6N60APBF |
|
Hersteller: Vishay Semiconductors
MOSFETs TO220 600V 5.5A N-CH MOSFET
MOSFETs TO220 600V 5.5A N-CH MOSFET
auf Bestellung 5128 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.72 EUR |
| 10+ | 4.93 EUR |
| 100+ | 4.25 EUR |
| 500+ | 3.67 EUR |
| 1000+ | 3.37 EUR |
| IXFA16N60P3 |
|
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO263
On-state resistance: 470mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO263
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO263
On-state resistance: 470mΩ
Mounting: SMD
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 76 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 25+ | 3.45 EUR |
| IXFH26N60P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 26A; 460W; TO247-3
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
Category: THT N channel transistors
Description: Transistor: N-MOSFET; PolarHV™; unipolar; 600V; 26A; 460W; TO247-3
Type of transistor: N-MOSFET
Technology: PolarHV™
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 26A
Power dissipation: 460W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.27Ω
Mounting: THT
Gate charge: 72nC
Kind of package: tube
Kind of channel: enhancement
Reverse recovery time: 200ns
auf Bestellung 253 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 12.34 EUR |
| 10+ | 11.48 EUR |
| 15+ | 10.82 EUR |
| 30+ | 9.57 EUR |
| 60+ | 8.78 EUR |
| IXFH36N60P |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 36A; 650W; TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 36A
Power dissipation: 650W
Case: TO247-3
On-state resistance: 0.19Ω
Mounting: THT
Gate charge: 102nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 266 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 14.28 EUR |
| 10+ | 13.46 EUR |
| 15+ | 12.85 EUR |
| 30+ | 11.86 EUR |
| 60+ | 11.51 EUR |
| IXFH36N60P |
|
Hersteller: IXYS
MOSFETs 600V 36A
MOSFETs 600V 36A
auf Bestellung 76 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 28.69 EUR |
| 10+ | 17.58 EUR |
| 120+ | 16.15 EUR |
| IXFP16N60P3 |
|
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO220AB
On-state resistance: 470mΩ
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 600V; 16A; 347W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 600V
Drain current: 16A
Power dissipation: 347W
Case: TO220AB
On-state resistance: 470mΩ
Mounting: THT
Gate charge: 36nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 258 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 10+ | 8.73 EUR |
| 50+ | 4.74 EUR |
| 100+ | 4.38 EUR |
| IXGH36N60B3 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Collector current: 36A
Collector-emitter voltage: 600V
Pulsed collector current: 200A
Turn-on time: 45ns
Turn-off time: 350ns
Gate-emitter voltage: ±20V
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Collector current: 36A
Collector-emitter voltage: 600V
Pulsed collector current: 200A
Turn-on time: 45ns
Turn-off time: 350ns
Gate-emitter voltage: ±20V
auf Bestellung 206 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 7.88 EUR |
| 16+ | 5.51 EUR |
| 30+ | 5.24 EUR |
| IXGH36N60B3 |
|
Hersteller: IXYS
IGBTs GenX3 600V IGBTs
IGBTs GenX3 600V IGBTs
auf Bestellung 47 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 13.09 EUR |
| 10+ | 8.77 EUR |
| 100+ | 7.03 EUR |
| 500+ | 6.26 EUR |
| IXGH36N60B3C1 |
|
Hersteller: IXYS
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Collector current: 36A
Collector-emitter voltage: 600V
Pulsed collector current: 200A
Turn-on time: 47ns
Turn-off time: 350ns
Gate-emitter voltage: ±20V
Category: THT IGBT transistors
Description: Transistor: IGBT; GenX3™; 600V; 36A; 250W; TO247-3
Type of transistor: IGBT
Technology: GenX3™; PT
Power dissipation: 250W
Case: TO247-3
Mounting: THT
Gate charge: 80nC
Kind of package: tube
Collector current: 36A
Collector-emitter voltage: 600V
Pulsed collector current: 200A
Turn-on time: 47ns
Turn-off time: 350ns
Gate-emitter voltage: ±20V
auf Bestellung 1 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 85.08 EUR |
| IXTH26N60P |
|
Hersteller: IXYS
MOSFETs 26.0 Amps 600 V 0.27 Ohm Rds
MOSFETs 26.0 Amps 600 V 0.27 Ohm Rds
auf Bestellung 45 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 22.07 EUR |
| 10+ | 15.49 EUR |
| 120+ | 11.19 EUR |
| NTB6N60 |
|
auf Bestellung 9939 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 343+ | 1.61 EUR |
| NTB6N60T4 |
|
Hersteller: Motorola
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 25 V
Description: N-CHANNEL POWER MOSFET
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 3A, 10V
Power Dissipation (Max): 142W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 25 V
auf Bestellung 6400 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 158+ | 3.47 EUR |
| PBES16N60R |
|
Hersteller: TE Connectivity / Alcoswitch
Emergency Stop Switches / E-Stop Switches PBES16 23.8 RB NO LAMP 1NC 1NC
Emergency Stop Switches / E-Stop Switches PBES16 23.8 RB NO LAMP 1NC 1NC
auf Bestellung 20 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 97.52 EUR |
| 10+ | 88.16 EUR |
| 25+ | 87.36 EUR |
| 50+ | 74.24 EUR |
| 250+ | 70.19 EUR |
| PBES16N60R |
|
Hersteller: TE Connectivity ALCOSWITCH Switches
Description: SWITCH ESTOP TWIST RESET 3A 125V
Packaging: Tray
Features: Push Marking
Current Rating (Amps): 3A (AC), 220mA (DC)
Mounting Type: Panel Mount, Front
Circuit: SPST-NC x 2
Switch Function: On-Off
Operating Temperature: -25°C ~ 70°C
Termination Style: Solder, Quick Connect - 0.110" (2.8mm)
Ingress Protection: IP65 - Dust Tight, Water Resistant
Panel Cutout Dimensions: Circular - 16.00mm Dia
Part Status: Active
Voltage Rating - AC: 125 V
Reset Operation: Twist
Voltage Rating - DC: 125 V
Description: SWITCH ESTOP TWIST RESET 3A 125V
Packaging: Tray
Features: Push Marking
Current Rating (Amps): 3A (AC), 220mA (DC)
Mounting Type: Panel Mount, Front
Circuit: SPST-NC x 2
Switch Function: On-Off
Operating Temperature: -25°C ~ 70°C
Termination Style: Solder, Quick Connect - 0.110" (2.8mm)
Ingress Protection: IP65 - Dust Tight, Water Resistant
Panel Cutout Dimensions: Circular - 16.00mm Dia
Part Status: Active
Voltage Rating - AC: 125 V
Reset Operation: Twist
Voltage Rating - DC: 125 V
auf Bestellung 36 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 112.74 EUR |
| 5+ | 98.35 EUR |
| 10+ | 92.71 EUR |
| 25+ | 85.75 EUR |
| SIHA186N60EF-GE3 |
|
Hersteller: Vishay / Siliconix
MOSFETs TO220 600V 8.4A N-CH MOSFET
MOSFETs TO220 600V 8.4A N-CH MOSFET
auf Bestellung 1516 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 7.56 EUR |
| 10+ | 4.9 EUR |
| 100+ | 3.67 EUR |
| 500+ | 3.06 EUR |
| 1000+ | 2.84 EUR |
| 2000+ | 2.81 EUR |
| SIHB186N60EF-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 8.4A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 193mOhm @ 9.5A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 100 V
Description: MOSFET N-CH 600V 8.4A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 193mOhm @ 9.5A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 100 V
auf Bestellung 2659 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.21 EUR |
| 10+ | 5.38 EUR |
| 50+ | 4.16 EUR |
| 100+ | 3.78 EUR |
| 500+ | 3.09 EUR |
| SIHD186N60EF-GE3 |
|
Hersteller: Vishay Semiconductors
MOSFETs TO252 600V 19A N-CH MOSFET
MOSFETs TO252 600V 19A N-CH MOSFET
auf Bestellung 138 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.75 EUR |
| 10+ | 4.02 EUR |
| 100+ | 3.08 EUR |
| 500+ | 2.57 EUR |
| 1000+ | 2.51 EUR |
| 3000+ | 2.49 EUR |
| SIHD186N60EF-GE3 |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 600V 19A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 201mOhm @ 9.5A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 100 V
Description: MOSFET N-CH 600V 19A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Tc)
Rds On (Max) @ Id, Vgs: 201mOhm @ 9.5A, 10V
Power Dissipation (Max): 156W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1118 pF @ 100 V
auf Bestellung 4215 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.96 EUR |
| 10+ | 5.25 EUR |
| 50+ | 4.07 EUR |
| 100+ | 3.69 EUR |
| 500+ | 3.02 EUR |
| SIHG026N60EF-GE3 |
|
Hersteller: Vishay
MOSFETs TO247 600V 95A N-CH MOSFET
MOSFETs TO247 600V 95A N-CH MOSFET
auf Bestellung 211 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 29.76 EUR |
| 10+ | 24.06 EUR |
| 100+ | 20.06 EUR |
| 500+ | 16.92 EUR |
| SIHG186N60EF-GE3 |
|
Hersteller: Vishay / Siliconix
MOSFETs TO247 600V 8.4A N-CH MOSFET
MOSFETs TO247 600V 8.4A N-CH MOSFET
auf Bestellung 332 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 8.57 EUR |
| 10+ | 4.9 EUR |
| 100+ | 4.44 EUR |
| 500+ | 3.42 EUR |
| SIHH186N60EF-T1FE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 600V
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 193mOhm @ 9.5A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 100 V
Description: N-CHANNEL 600V
Packaging: Tape & Reel (TR)
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 193mOhm @ 9.5A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 100 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 2.86 EUR |
| SIHH186N60EF-T1FE3 |
|
Hersteller: Vishay Siliconix
Description: N-CHANNEL 600V
Packaging: Cut Tape (CT)
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 193mOhm @ 9.5A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 100 V
Description: N-CHANNEL 600V
Packaging: Cut Tape (CT)
Operating Temperature: -55°C ~ 150°C
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Tc)
Rds On (Max) @ Id, Vgs: 193mOhm @ 9.5A, 10V
Power Dissipation (Max): 114W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1081 pF @ 100 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.71 EUR |
| 10+ | 5.75 EUR |
| 50+ | 4.47 EUR |
| 100+ | 4.07 EUR |
| 500+ | 3.5 EUR |
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