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Foto | Bezeichnung | Hersteller | Beschreibung |
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IGD06N65T6ARMA1 | Infineon Technologies | IGBT Transistors HOME APPLIANCES 14 |
auf Bestellung 2832 Stücke: Lieferzeit 10-14 Tag (e) |
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IKD06N65ET6ARMA1 | Infineon Technologies | IGBT Transistors HOME APPLIANCES 14 |
auf Bestellung 5609 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH26N65X2 | IXYS | MOSFET MOSFET DISCRETE |
auf Bestellung 52 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH26N65X2 | Littelfuse Inc. |
Description: IXFH26N65X2 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 130mOhm @ 500mA, 10V Power Dissipation (Max): 460W (Tc) Vgs(th) (Max) @ Id: 5V @ 2.5mA Supplier Device Package: TO-247 (IXFH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V |
auf Bestellung 1158 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH46N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 660W; TO247-3; 180ns Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 46A Power dissipation: 660W Case: TO247-3 On-state resistance: 69mΩ Mounting: THT Gate charge: 98nC Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ultra junction x-class Reverse recovery time: 180ns Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IXFH46N65X2 | Littelfuse Inc. |
Description: MOSFET N-CH 650V 46A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 76mOhm @ 23A, 10V Power Dissipation (Max): 660W (Tc) Vgs(th) (Max) @ Id: 5.5V @ 4mA Supplier Device Package: TO-247 (IXTH) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V |
auf Bestellung 310 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH46N65X2 | IXYS | MOSFET MOSFET 650V/46A Ultra Junction X2 |
auf Bestellung 255 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH46N65X3 | Littelfuse Inc. |
Description: MOSFET 46A 650V X3 TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 73mOhm @ 23A, 10V Power Dissipation (Max): 520W (Tc) Vgs(th) (Max) @ Id: 5.2V @ 2.5mA Supplier Device Package: TO-247 (IXFH) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V |
auf Bestellung 352 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFH46N65X3 | IXYS | MOSFET DISCRETE MOSFET 46A 650V X3 TO |
auf Bestellung 69 Stücke: Lieferzeit 10-14 Tag (e) |
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IXFP26N65X2 | IXYS |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 650V; 26A; Idm: 36A; 460W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 650V Drain current: 26A Pulsed drain current: 36A Power dissipation: 460W Case: TO220AB Gate-source voltage: ±30V On-state resistance: 0.13Ω Mounting: THT Gate charge: 45nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 50 Stücke: Lieferzeit 7-14 Tag (e) |
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IXFP26N65X2 | IXYS | MOSFET MOSFET DISCRETE |
auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
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KSM6----N6--5-- | Essentra Components |
Description: SELF-ASSEMBLY PUSH PULL KNOB 1.0 Packaging: Bulk Color: Black Material: Acetal Shaft Size: M6 Diameter: 1.000" (25.40mm) Style: Cylindrical Type: Knurled, Straight Height: 0.380" (9.65mm) Indicator: No Indicator Part Status: Active |
auf Bestellung 1699 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHD6N65E-GE3 | Vishay / Siliconix | MOSFET 650V Vds 30V Vgs DPAK (TO-252) |
auf Bestellung 3772 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHD6N65E-GE3 | Vishay Siliconix |
Description: MOSFET N-CH 650V 7A DPAK Packaging: Tube Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V Power Dissipation (Max): 78W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V |
auf Bestellung 2867 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHF6N65E-GE3 | Vishay / Siliconix | MOSFET 650V Vds 30V Vgs TO-220 FULLPAK |
auf Bestellung 968 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHJ6N65E-T1-GE3 | Vishay Semiconductors | MOSFET 650V Vds 30V Vgs PowerPAK SO-8L |
auf Bestellung 5912 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHP6N65E-GE3 | Vishay / Siliconix | MOSFET 650V Vds 30V Vgs TO-220AB |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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SIHU6N65E-GE3 | Vishay / Siliconix | MOSFET 650V Vds 30V Vgs IPAK (TO-251) |
auf Bestellung 2701 Stücke: Lieferzeit 10-14 Tag (e) |
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STB6N65K3 | STMicroelectronics | MOSFET PTD HIGH VOLTAGE |
auf Bestellung 1995 Stücke: Lieferzeit 10-14 Tag (e) |
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STD16N65M2 | STMicroelectronics | MOSFET N-channel 650 V, 0.32 Ohm typ 11 A MDmesh M2 Power MOSFET in DPAK package |
auf Bestellung 5531 Stücke: Lieferzeit 10-14 Tag (e) |
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STD16N65M2 | STMicroelectronics |
Description: MOSFET N-CH 650V 11A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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STD16N65M2 | STMicroelectronics |
Description: MOSFET N-CH 650V 11A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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STD16N65M5 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 710V; 12A; 90W; DPAK Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 710V Drain current: 12A Power dissipation: 90W Case: DPAK Gate-source voltage: ±25V On-state resistance: 0.279Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 2487 Stücke: Lieferzeit 14-21 Tag (e) |
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STD16N65M5 | STMicroelectronics |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 710V; 12A; 90W; DPAK Type of transistor: N-MOSFET Technology: MDmesh™ Polarisation: unipolar Drain-source voltage: 710V Drain current: 12A Power dissipation: 90W Case: DPAK Gate-source voltage: ±25V On-state resistance: 0.279Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 2487 Stücke: Lieferzeit 7-14 Tag (e) |
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STD16N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 12A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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STD16N65M5 | STMicroelectronics | MOSFET N-Ch 650 Volt 12 Amp |
auf Bestellung 470 Stücke: Lieferzeit 10-14 Tag (e) |
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STD16N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 12A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V |
auf Bestellung 7981 Stücke: Lieferzeit 10-14 Tag (e) |
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STD16N65M5 | STMicroelectronics | Trans MOSFET N-CH Si 650V 12A 3-Pin(2+Tab) DPAK T/R |
auf Bestellung 2503 Stücke: Lieferzeit 14-21 Tag (e) |
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STD6N65M2 | STMicroelectronics |
Description: MOSFET N-CH 650V 4A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.35Ohm @ 2A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: DPAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 226 pF @ 100 V |
auf Bestellung 2488 Stücke: Lieferzeit 10-14 Tag (e) |
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STD6N65M2 | STMicroelectronics | MOSFET N-channel 650 V, 1.2 Ohm typ 4 A MDmesh M2 Power MOSFET in DPAK package |
auf Bestellung 2227 Stücke: Lieferzeit 122-126 Tag (e) |
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STF16N65M2 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT Kind of package: tube Kind of channel: enhanced |
auf Bestellung 88 Stücke: Lieferzeit 14-21 Tag (e) |
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STF16N65M2 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar Type of transistor: N-MOSFET Polarisation: unipolar Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 88 Stücke: Lieferzeit 7-14 Tag (e) |
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STF16N65M2 | STMicroelectronics | MOSFET N-channel 650 V, 0.32 Ohm typ 11 A MDmesh M2 Power MOSFET |
auf Bestellung 997 Stücke: Lieferzeit 10-14 Tag (e) |
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STF16N65M2 | STMicroelectronics |
Description: MOSFET N-CH 650V 11A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V |
auf Bestellung 998 Stücke: Lieferzeit 10-14 Tag (e) |
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STF16N65M5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 7.3A; 90W; TO220FP Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Drain current: 7.3A Power dissipation: 90W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.279Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate |
auf Bestellung 19 Stücke: Lieferzeit 14-21 Tag (e) |
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STF16N65M5 | STMicroelectronics |
Category: THT N channel transistors Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 7.3A; 90W; TO220FP Type of transistor: N-MOSFET Technology: MDmesh™ V Polarisation: unipolar Drain-source voltage: 650V Drain current: 7.3A Power dissipation: 90W Case: TO220FP Gate-source voltage: ±25V On-state resistance: 0.279Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Features of semiconductor devices: ESD protected gate Anzahl je Verpackung: 1 Stücke |
auf Bestellung 19 Stücke: Lieferzeit 7-14 Tag (e) |
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STF16N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 12A TO220FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V Power Dissipation (Max): 25W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220FP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V |
auf Bestellung 1631 Stücke: Lieferzeit 10-14 Tag (e) |
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STF16N65M5 | STMicroelectronics | MOSFET N-CH 65V 12A MDMESH |
auf Bestellung 11971 Stücke: Lieferzeit 10-14 Tag (e) |
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STF26N65DM2 | STMicroelectronics | MOSFET N-channel 650 V, 0.156 Ohm typ 20 A MDmesh DM2 Power MOSFET |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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STF6N65K3 | STMicroelectronics | MOSFET N-Ch 650V 1.1 Ohm 5.4A SuperMESH3 |
auf Bestellung 822 Stücke: Lieferzeit 10-14 Tag (e) |
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STF6N65K3 | STMicroelectronics | Trans MOSFET N-CH 650V 5.4A 3-Pin(3+Tab) TO-220FP Tube |
auf Bestellung 1425 Stücke: Lieferzeit 14-21 Tag (e) |
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STF6N65M2 | STMicroelectronics | MOSFET N-channel 650 V, 1.2 Ohm typ 4 A MDmesh M2 Power MOSFET |
auf Bestellung 1597 Stücke: Lieferzeit 10-14 Tag (e) |
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STL16N65M2 | STMicroelectronics |
Description: MOSFET N-CH 650V 7.5A POWERFLAT Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc) Rds On (Max) @ Id, Vgs: 395mOhm @ 3.5A, 10V Power Dissipation (Max): 56W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: PowerFlat™ (5x6) HV Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V |
auf Bestellung 2530 Stücke: Lieferzeit 10-14 Tag (e) |
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STL16N65M2 | STMicroelectronics | MOSFET N-channel 650 V, 0.325 Ohm typ 7.5 A MDmesh M2 Power MOSFET |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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STP16N65M2 | STMicroelectronics | MOSFET N-channel 650 V, 0.32 Ohm typ 11 A MDmesh M2 Power MOSFET in TO-220 package |
auf Bestellung 980 Stücke: Lieferzeit 10-14 Tag (e) |
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STP16N65M5 | ST |
Transistor N-Channel MOSFET; 650V; 25V; 279mOhm; 12A; 25W; -55°C ~ 150°C; STP16N65M5 TSTP16N65M5 Anzahl je Verpackung: 5 Stücke |
auf Bestellung 15 Stücke: Lieferzeit 7-14 Tag (e) |
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STP16N65M5 | STMicroelectronics | MOSFET N-Ch 650 Volt 12 Amp |
auf Bestellung 898 Stücke: Lieferzeit 10-14 Tag (e) |
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STP16N65M5 | STMicroelectronics |
Description: MOSFET N-CH 650V 12A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Tc) Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V Power Dissipation (Max): 90W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V |
auf Bestellung 727 Stücke: Lieferzeit 10-14 Tag (e) |
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STP16N65M5 | STMicroelectronics | Trans MOSFET N-CH Si 650V 12A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 20 Stücke: Lieferzeit 14-21 Tag (e) |
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STP26N65DM2 | STMicroelectronics |
Description: MOSFET N-CH 650V 20A TO220 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-220 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 35.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 100 V |
auf Bestellung 858 Stücke: Lieferzeit 10-14 Tag (e) |
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STU16N65M2 | STMicroelectronics | MOSFET N-channel 650 V, 0.32 Ohm typ 11 A MDmesh M2 Power MOSFET in IPAK package |
auf Bestellung 1988 Stücke: Lieferzeit 10-14 Tag (e) |
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STU16N65M2 | STMicroelectronics |
Description: MOSFET N-CH 650V 11A IPAK Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Tc) Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-251 (IPAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V |
auf Bestellung 10491 Stücke: Lieferzeit 10-14 Tag (e) |
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STU6N65M2 | STMicroelectronics | MOSFET N-channel 650 V, 1.2 Ohm typ 4 A MDmesh M2 Power MOSFET in IPAK package |
auf Bestellung 2850 Stücke: Lieferzeit 10-14 Tag (e) |
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STW56N65DM2 | STMicroelectronics | MOSFET N-channel 650 V, 0.058 Ohm typ 48 A MDmesh DM2 Power MOSFET |
auf Bestellung 267 Stücke: Lieferzeit 10-14 Tag (e) |
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STW56N65M2 | STMicroelectronics | MOSFET N-channel 650 V, 0.049 Ohm typ 49 A MDmesh M2 Power MOSFET |
auf Bestellung 204 Stücke: Lieferzeit 10-14 Tag (e) |
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STW56N65M2 | STMicroelectronics |
Description: MOSFET N-CH 650V 49A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Rds On (Max) @ Id, Vgs: 62mOhm @ 24.5A, 10V Power Dissipation (Max): 358W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-247-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 100 V |
auf Bestellung 114 Stücke: Lieferzeit 10-14 Tag (e) |
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TRS16N65FB,S1Q | Toshiba | Schottky Diodes & Rectifiers SCHOTTKY BARRIER DIODE TO-247 V=650 IF=16A |
auf Bestellung 192 Stücke: Lieferzeit 10-14 Tag (e) |
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TRS16N65FB,S1Q | Toshiba Semiconductor and Storage |
Description: DIODE ARR SIC SCHOTT 650V TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Speed: No Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Diode Configuration: 1 Pair Common Cathode Current - Average Rectified (Io) (per Diode): 8A (DC) Supplier Device Package: TO-247 Operating Temperature - Junction: 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
auf Bestellung 138 Stücke: Lieferzeit 10-14 Tag (e) |
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WMJ26N65C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 20A; 147W; TO247-3 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Power dissipation: 147W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhanced |
auf Bestellung 34 Stücke: Lieferzeit 14-21 Tag (e) |
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WMJ26N65C2 | WAYON |
Category: THT N channel transistors Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 20A; 147W; TO247-3 Type of transistor: N-MOSFET Technology: WMOS™ C2 Polarisation: unipolar Drain-source voltage: 650V Drain current: 20A Power dissipation: 147W Case: TO247-3 Gate-source voltage: ±30V On-state resistance: 0.19Ω Mounting: THT Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 34 Stücke: Lieferzeit 7-14 Tag (e) |
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IGD06N65T6ARMA1 |
Hersteller: Infineon Technologies
IGBT Transistors HOME APPLIANCES 14
IGBT Transistors HOME APPLIANCES 14
auf Bestellung 2832 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 2.59 EUR |
10+ | 2.16 EUR |
100+ | 1.72 EUR |
250+ | 1.59 EUR |
500+ | 1.44 EUR |
1000+ | 1.23 EUR |
3000+ | 1.17 EUR |
IKD06N65ET6ARMA1 |
Hersteller: Infineon Technologies
IGBT Transistors HOME APPLIANCES 14
IGBT Transistors HOME APPLIANCES 14
auf Bestellung 5609 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 2.5 EUR |
10+ | 1.8 EUR |
100+ | 1.61 EUR |
250+ | 1.55 EUR |
1000+ | 1.5 EUR |
3000+ | 1.37 EUR |
IXFH26N65X2 |
Hersteller: IXYS
MOSFET MOSFET DISCRETE
MOSFET MOSFET DISCRETE
auf Bestellung 52 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 18.94 EUR |
10+ | 17.02 EUR |
30+ | 16.77 EUR |
60+ | 16.39 EUR |
IXFH26N65X2 |
Hersteller: Littelfuse Inc.
Description: IXFH26N65X2
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-247 (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V
Description: IXFH26N65X2
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-247 (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V
auf Bestellung 1158 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 18.48 EUR |
30+ | 14.95 EUR |
120+ | 14.07 EUR |
510+ | 12.75 EUR |
1020+ | 11.7 EUR |
IXFH46N65X2 |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 660W; TO247-3; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 660W
Case: TO247-3
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 180ns
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 660W; TO247-3; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 660W
Case: TO247-3
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 180ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFH46N65X2 |
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 650V 46A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 76mOhm @ 23A, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V
Description: MOSFET N-CH 650V 46A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 76mOhm @ 23A, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V
auf Bestellung 310 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 11.86 EUR |
30+ | 9.46 EUR |
120+ | 8.77 EUR |
IXFH46N65X2 |
Hersteller: IXYS
MOSFET MOSFET 650V/46A Ultra Junction X2
MOSFET MOSFET 650V/46A Ultra Junction X2
auf Bestellung 255 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 16.97 EUR |
10+ | 14.56 EUR |
30+ | 13.2 EUR |
120+ | 12.13 EUR |
270+ | 11.4 EUR |
IXFH46N65X3 |
Hersteller: Littelfuse Inc.
Description: MOSFET 46A 650V X3 TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 73mOhm @ 23A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 2.5mA
Supplier Device Package: TO-247 (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V
Description: MOSFET 46A 650V X3 TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 73mOhm @ 23A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 2.5mA
Supplier Device Package: TO-247 (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V
auf Bestellung 352 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 15.1 EUR |
10+ | 12.94 EUR |
300+ | 10.14 EUR |
IXFH46N65X3 |
Hersteller: IXYS
MOSFET DISCRETE MOSFET 46A 650V X3 TO
MOSFET DISCRETE MOSFET 46A 650V X3 TO
auf Bestellung 69 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 15.21 EUR |
10+ | 13.02 EUR |
30+ | 11.83 EUR |
IXFP26N65X2 |
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 26A; Idm: 36A; 460W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 36A
Power dissipation: 460W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 26A; Idm: 36A; 460W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 36A
Power dissipation: 460W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 11 EUR |
10+ | 7.19 EUR |
IXFP26N65X2 |
Hersteller: IXYS
MOSFET MOSFET DISCRETE
MOSFET MOSFET DISCRETE
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 15.63 EUR |
10+ | 13.41 EUR |
50+ | 12.18 EUR |
KSM6----N6--5-- |
Hersteller: Essentra Components
Description: SELF-ASSEMBLY PUSH PULL KNOB 1.0
Packaging: Bulk
Color: Black
Material: Acetal
Shaft Size: M6
Diameter: 1.000" (25.40mm)
Style: Cylindrical
Type: Knurled, Straight
Height: 0.380" (9.65mm)
Indicator: No Indicator
Part Status: Active
Description: SELF-ASSEMBLY PUSH PULL KNOB 1.0
Packaging: Bulk
Color: Black
Material: Acetal
Shaft Size: M6
Diameter: 1.000" (25.40mm)
Style: Cylindrical
Type: Knurled, Straight
Height: 0.380" (9.65mm)
Indicator: No Indicator
Part Status: Active
auf Bestellung 1699 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
9+ | 2.04 EUR |
11+ | 1.7 EUR |
12+ | 1.53 EUR |
25+ | 1.36 EUR |
50+ | 1.22 EUR |
100+ | 1.2 EUR |
SIHD6N65E-GE3 |
Hersteller: Vishay / Siliconix
MOSFET 650V Vds 30V Vgs DPAK (TO-252)
MOSFET 650V Vds 30V Vgs DPAK (TO-252)
auf Bestellung 3772 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 2.52 EUR |
10+ | 2.09 EUR |
100+ | 1.67 EUR |
250+ | 1.55 EUR |
500+ | 1.4 EUR |
1000+ | 1.22 EUR |
SIHD6N65E-GE3 |
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 7A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V
Description: MOSFET N-CH 650V 7A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V
auf Bestellung 2867 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 1.78 EUR |
75+ | 1.42 EUR |
150+ | 1.17 EUR |
525+ | 1.06 EUR |
SIHF6N65E-GE3 |
Hersteller: Vishay / Siliconix
MOSFET 650V Vds 30V Vgs TO-220 FULLPAK
MOSFET 650V Vds 30V Vgs TO-220 FULLPAK
auf Bestellung 968 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 3.85 EUR |
10+ | 3.2 EUR |
100+ | 2.55 EUR |
250+ | 2.36 EUR |
500+ | 2.15 EUR |
1000+ | 1.81 EUR |
2000+ | 1.78 EUR |
SIHJ6N65E-T1-GE3 |
Hersteller: Vishay Semiconductors
MOSFET 650V Vds 30V Vgs PowerPAK SO-8L
MOSFET 650V Vds 30V Vgs PowerPAK SO-8L
auf Bestellung 5912 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 3.36 EUR |
10+ | 2.8 EUR |
100+ | 2.22 EUR |
250+ | 2.04 EUR |
500+ | 1.87 EUR |
1000+ | 1.59 EUR |
3000+ | 1.55 EUR |
SIHP6N65E-GE3 |
Hersteller: Vishay / Siliconix
MOSFET 650V Vds 30V Vgs TO-220AB
MOSFET 650V Vds 30V Vgs TO-220AB
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 3.41 EUR |
10+ | 2.85 EUR |
100+ | 2.25 EUR |
250+ | 2.09 EUR |
500+ | 1.9 EUR |
1000+ | 1.57 EUR |
2000+ | 1.54 EUR |
SIHU6N65E-GE3 |
Hersteller: Vishay / Siliconix
MOSFET 650V Vds 30V Vgs IPAK (TO-251)
MOSFET 650V Vds 30V Vgs IPAK (TO-251)
auf Bestellung 2701 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 2.69 EUR |
10+ | 2.24 EUR |
75+ | 1.76 EUR |
300+ | 1.64 EUR |
525+ | 1.49 EUR |
1050+ | 1.27 EUR |
2550+ | 1.26 EUR |
STB6N65K3 |
Hersteller: STMicroelectronics
MOSFET PTD HIGH VOLTAGE
MOSFET PTD HIGH VOLTAGE
auf Bestellung 1995 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 2.31 EUR |
10+ | 1.9 EUR |
100+ | 1.48 EUR |
500+ | 1.25 EUR |
1000+ | 1.02 EUR |
2000+ | 0.96 EUR |
5000+ | 0.91 EUR |
STD16N65M2 |
Hersteller: STMicroelectronics
MOSFET N-channel 650 V, 0.32 Ohm typ 11 A MDmesh M2 Power MOSFET in DPAK package
MOSFET N-channel 650 V, 0.32 Ohm typ 11 A MDmesh M2 Power MOSFET in DPAK package
auf Bestellung 5531 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 3.57 EUR |
10+ | 2.96 EUR |
100+ | 2.36 EUR |
500+ | 1.99 EUR |
1000+ | 1.65 EUR |
2500+ | 1.57 EUR |
5000+ | 1.52 EUR |
STD16N65M2 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V
Description: MOSFET N-CH 650V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 3.47 EUR |
10+ | 2.87 EUR |
100+ | 2.28 EUR |
500+ | 1.93 EUR |
1000+ | 1.64 EUR |
STD16N65M2 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V
Description: MOSFET N-CH 650V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 1.56 EUR |
STD16N65M5 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 12A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 12A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.279Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 12A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 12A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.279Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2487 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
21+ | 3.55 EUR |
23+ | 3.12 EUR |
27+ | 2.67 EUR |
29+ | 2.53 EUR |
STD16N65M5 |
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 12A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 12A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.279Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 12A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 12A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.279Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2487 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
21+ | 3.55 EUR |
23+ | 3.12 EUR |
27+ | 2.67 EUR |
29+ | 2.53 EUR |
STD16N65M5 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 12A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V
Description: MOSFET N-CH 650V 12A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 2.31 EUR |
5000+ | 2.21 EUR |
STD16N65M5 |
Hersteller: STMicroelectronics
MOSFET N-Ch 650 Volt 12 Amp
MOSFET N-Ch 650 Volt 12 Amp
auf Bestellung 470 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 4.77 EUR |
10+ | 4 EUR |
25+ | 3.77 EUR |
100+ | 3.22 EUR |
250+ | 3.04 EUR |
500+ | 2.87 EUR |
1000+ | 2.46 EUR |
STD16N65M5 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 12A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V
Description: MOSFET N-CH 650V 12A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V
auf Bestellung 7981 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 4.73 EUR |
10+ | 3.98 EUR |
100+ | 3.22 EUR |
500+ | 2.86 EUR |
1000+ | 2.45 EUR |
STD16N65M5 |
Hersteller: STMicroelectronics
Trans MOSFET N-CH Si 650V 12A 3-Pin(2+Tab) DPAK T/R
Trans MOSFET N-CH Si 650V 12A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 2503 Stücke:
Lieferzeit 14-21 Tag (e)STD6N65M2 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 2A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 226 pF @ 100 V
Description: MOSFET N-CH 650V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 2A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 226 pF @ 100 V
auf Bestellung 2488 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 2.22 EUR |
10+ | 1.8 EUR |
100+ | 1.4 EUR |
500+ | 1.19 EUR |
1000+ | 0.97 EUR |
STD6N65M2 |
Hersteller: STMicroelectronics
MOSFET N-channel 650 V, 1.2 Ohm typ 4 A MDmesh M2 Power MOSFET in DPAK package
MOSFET N-channel 650 V, 1.2 Ohm typ 4 A MDmesh M2 Power MOSFET in DPAK package
auf Bestellung 2227 Stücke:
Lieferzeit 122-126 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 2.22 EUR |
10+ | 1.81 EUR |
100+ | 1.41 EUR |
500+ | 1.2 EUR |
1000+ | 0.98 EUR |
2500+ | 0.92 EUR |
5000+ | 0.87 EUR |
STF16N65M2 |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 2.65 EUR |
44+ | 1.64 EUR |
46+ | 1.56 EUR |
STF16N65M2 |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 88 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
28+ | 2.65 EUR |
44+ | 1.64 EUR |
46+ | 1.56 EUR |
500+ | 1.53 EUR |
1000+ | 1.5 EUR |
STF16N65M2 |
Hersteller: STMicroelectronics
MOSFET N-channel 650 V, 0.32 Ohm typ 11 A MDmesh M2 Power MOSFET
MOSFET N-channel 650 V, 0.32 Ohm typ 11 A MDmesh M2 Power MOSFET
auf Bestellung 997 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 3.27 EUR |
10+ | 2.24 EUR |
100+ | 1.99 EUR |
500+ | 1.76 EUR |
1000+ | 1.67 EUR |
2000+ | 1.6 EUR |
5000+ | 1.55 EUR |
STF16N65M2 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 11A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V
Description: MOSFET N-CH 650V 11A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V
auf Bestellung 998 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 3.5 EUR |
50+ | 2.83 EUR |
100+ | 2.32 EUR |
500+ | 1.97 EUR |
STF16N65M5 |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 7.3A; 90W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.3A
Power dissipation: 90W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.279Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 7.3A; 90W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.3A
Power dissipation: 90W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.279Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 3.76 EUR |
STF16N65M5 |
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 7.3A; 90W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.3A
Power dissipation: 90W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.279Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 7.3A; 90W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.3A
Power dissipation: 90W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.279Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 19 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 3.76 EUR |
STF16N65M5 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V
Description: MOSFET N-CH 650V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V
auf Bestellung 1631 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 5.09 EUR |
50+ | 4.03 EUR |
100+ | 3.45 EUR |
500+ | 3.07 EUR |
1000+ | 2.63 EUR |
STF16N65M5 |
Hersteller: STMicroelectronics
MOSFET N-CH 65V 12A MDMESH
MOSFET N-CH 65V 12A MDMESH
auf Bestellung 11971 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 3.47 EUR |
25+ | 2.92 EUR |
100+ | 2.6 EUR |
500+ | 2.5 EUR |
STF26N65DM2 |
Hersteller: STMicroelectronics
MOSFET N-channel 650 V, 0.156 Ohm typ 20 A MDmesh DM2 Power MOSFET
MOSFET N-channel 650 V, 0.156 Ohm typ 20 A MDmesh DM2 Power MOSFET
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 6 EUR |
10+ | 5.03 EUR |
25+ | 4.24 EUR |
100+ | 3.8 EUR |
250+ | 3.64 EUR |
500+ | 3.47 EUR |
1000+ | 3.1 EUR |
STF6N65K3 |
Hersteller: STMicroelectronics
MOSFET N-Ch 650V 1.1 Ohm 5.4A SuperMESH3
MOSFET N-Ch 650V 1.1 Ohm 5.4A SuperMESH3
auf Bestellung 822 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 3.84 EUR |
10+ | 2.04 EUR |
100+ | 1.8 EUR |
250+ | 1.67 EUR |
STF6N65K3 |
Hersteller: STMicroelectronics
Trans MOSFET N-CH 650V 5.4A 3-Pin(3+Tab) TO-220FP Tube
Trans MOSFET N-CH 650V 5.4A 3-Pin(3+Tab) TO-220FP Tube
auf Bestellung 1425 Stücke:
Lieferzeit 14-21 Tag (e)STF6N65M2 |
Hersteller: STMicroelectronics
MOSFET N-channel 650 V, 1.2 Ohm typ 4 A MDmesh M2 Power MOSFET
MOSFET N-channel 650 V, 1.2 Ohm typ 4 A MDmesh M2 Power MOSFET
auf Bestellung 1597 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 2.22 EUR |
10+ | 1.83 EUR |
100+ | 1.47 EUR |
500+ | 1.4 EUR |
1000+ | 1.14 EUR |
2000+ | 1.03 EUR |
5000+ | 1 EUR |
STL16N65M2 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 7.5A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 395mOhm @ 3.5A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V
Description: MOSFET N-CH 650V 7.5A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 395mOhm @ 3.5A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V
auf Bestellung 2530 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 3.7 EUR |
10+ | 3.08 EUR |
100+ | 2.45 EUR |
500+ | 2.07 EUR |
1000+ | 1.76 EUR |
STL16N65M2 |
Hersteller: STMicroelectronics
MOSFET N-channel 650 V, 0.325 Ohm typ 7.5 A MDmesh M2 Power MOSFET
MOSFET N-channel 650 V, 0.325 Ohm typ 7.5 A MDmesh M2 Power MOSFET
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 3.73 EUR |
10+ | 3.1 EUR |
100+ | 2.46 EUR |
250+ | 2.43 EUR |
500+ | 2.09 EUR |
1000+ | 1.76 EUR |
3000+ | 1.67 EUR |
STP16N65M2 |
Hersteller: STMicroelectronics
MOSFET N-channel 650 V, 0.32 Ohm typ 11 A MDmesh M2 Power MOSFET in TO-220 package
MOSFET N-channel 650 V, 0.32 Ohm typ 11 A MDmesh M2 Power MOSFET in TO-220 package
auf Bestellung 980 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 3.52 EUR |
10+ | 1.9 EUR |
100+ | 1.81 EUR |
250+ | 1.78 EUR |
500+ | 1.7 EUR |
1000+ | 1.65 EUR |
2000+ | 1.64 EUR |
STP16N65M5 |
Hersteller: ST
Transistor N-Channel MOSFET; 650V; 25V; 279mOhm; 12A; 25W; -55°C ~ 150°C; STP16N65M5 TSTP16N65M5
Anzahl je Verpackung: 5 Stücke
Transistor N-Channel MOSFET; 650V; 25V; 279mOhm; 12A; 25W; -55°C ~ 150°C; STP16N65M5 TSTP16N65M5
Anzahl je Verpackung: 5 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 7.14 EUR |
STP16N65M5 |
Hersteller: STMicroelectronics
MOSFET N-Ch 650 Volt 12 Amp
MOSFET N-Ch 650 Volt 12 Amp
auf Bestellung 898 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 5.1 EUR |
25+ | 4.07 EUR |
100+ | 3.48 EUR |
500+ | 3.1 EUR |
1000+ | 2.64 EUR |
2000+ | 2.46 EUR |
STP16N65M5 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V
Description: MOSFET N-CH 650V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V
auf Bestellung 727 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 5.07 EUR |
50+ | 4.02 EUR |
100+ | 3.45 EUR |
500+ | 3.06 EUR |
STP16N65M5 |
Hersteller: STMicroelectronics
Trans MOSFET N-CH Si 650V 12A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH Si 650V 12A 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)STP26N65DM2 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 100 V
Description: MOSFET N-CH 650V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 100 V
auf Bestellung 858 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 5.4 EUR |
10+ | 4.54 EUR |
100+ | 3.67 EUR |
500+ | 3.27 EUR |
STU16N65M2 |
Hersteller: STMicroelectronics
MOSFET N-channel 650 V, 0.32 Ohm typ 11 A MDmesh M2 Power MOSFET in IPAK package
MOSFET N-channel 650 V, 0.32 Ohm typ 11 A MDmesh M2 Power MOSFET in IPAK package
auf Bestellung 1988 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 3.7 EUR |
10+ | 2.97 EUR |
100+ | 2.46 EUR |
250+ | 2.25 EUR |
500+ | 2.06 EUR |
1000+ | 1.67 EUR |
3000+ | 1.62 EUR |
STU16N65M2 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 11A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V
Description: MOSFET N-CH 650V 11A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V
auf Bestellung 10491 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 3.68 EUR |
75+ | 2.95 EUR |
150+ | 2.43 EUR |
525+ | 2.06 EUR |
1050+ | 1.74 EUR |
2025+ | 1.66 EUR |
5025+ | 1.59 EUR |
10050+ | 1.54 EUR |
STU6N65M2 |
Hersteller: STMicroelectronics
MOSFET N-channel 650 V, 1.2 Ohm typ 4 A MDmesh M2 Power MOSFET in IPAK package
MOSFET N-channel 650 V, 1.2 Ohm typ 4 A MDmesh M2 Power MOSFET in IPAK package
auf Bestellung 2850 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 1.78 EUR |
10+ | 1.1 EUR |
100+ | 0.94 EUR |
500+ | 0.87 EUR |
1000+ | 0.75 EUR |
3000+ | 0.7 EUR |
STW56N65DM2 |
Hersteller: STMicroelectronics
MOSFET N-channel 650 V, 0.058 Ohm typ 48 A MDmesh DM2 Power MOSFET
MOSFET N-channel 650 V, 0.058 Ohm typ 48 A MDmesh DM2 Power MOSFET
auf Bestellung 267 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 18.18 EUR |
25+ | 14.52 EUR |
100+ | 12.99 EUR |
250+ | 11.46 EUR |
600+ | 10.3 EUR |
STW56N65M2 |
Hersteller: STMicroelectronics
MOSFET N-channel 650 V, 0.049 Ohm typ 49 A MDmesh M2 Power MOSFET
MOSFET N-channel 650 V, 0.049 Ohm typ 49 A MDmesh M2 Power MOSFET
auf Bestellung 204 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 14.29 EUR |
10+ | 12.71 EUR |
25+ | 11.11 EUR |
100+ | 10.19 EUR |
250+ | 8.99 EUR |
600+ | 8.08 EUR |
1200+ | 7.73 EUR |
STW56N65M2 |
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 49A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 24.5A, 10V
Power Dissipation (Max): 358W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 100 V
Description: MOSFET N-CH 650V 49A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 24.5A, 10V
Power Dissipation (Max): 358W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 100 V
auf Bestellung 114 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 14.19 EUR |
30+ | 11.32 EUR |
TRS16N65FB,S1Q |
Hersteller: Toshiba
Schottky Diodes & Rectifiers SCHOTTKY BARRIER DIODE TO-247 V=650 IF=16A
Schottky Diodes & Rectifiers SCHOTTKY BARRIER DIODE TO-247 V=650 IF=16A
auf Bestellung 192 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 9.47 EUR |
10+ | 7.52 EUR |
120+ | 6.42 EUR |
270+ | 6.16 EUR |
510+ | 5.72 EUR |
1020+ | 4.73 EUR |
TRS16N65FB,S1Q |
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARR SIC SCHOTT 650V TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Description: DIODE ARR SIC SCHOTT 650V TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 138 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 9.42 EUR |
30+ | 7.46 EUR |
120+ | 6.39 EUR |
WMJ26N65C2 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 20A; 147W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 147W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 20A; 147W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 147W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
12+ | 6.02 EUR |
15+ | 4.8 EUR |
27+ | 2.69 EUR |
29+ | 2.55 EUR |
WMJ26N65C2 |
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 20A; 147W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 147W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 20A; 147W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 147W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 34 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
12+ | 6.02 EUR |
15+ | 4.8 EUR |
27+ | 2.69 EUR |
29+ | 2.55 EUR |
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