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SPA17N80C3 SPA17N80C3
Produktcode: 29151
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Infineon datsdheet-spa17n80c3.pdf description Transistoren > MOSFET N-CH
Gehäuse: TO-220
Uds,V: 800 V
Idd,A: 17 A
Rds(on), Ohm: 0,29 Ohm
Ciss, pF/Qg, nC: 2320/91
JHGF: THT
auf Bestellung 29 Stück:
Lieferzeit 21-28 Tag (e)
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SPB17N80C3 SPB17N80C3
Produktcode: 37324
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Infineon spb17n80c3_rev25_ratio-48451.pdf Transistoren > MOSFET N-CH
Gehäuse: D2Pak
Uds,V: 800
Idd,A: 11
Rds(on), Ohm: 0.25
Ciss, pF/Qg, nC: 2300/88
JHGF: SMD
auf Bestellung 9 Stück:
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SPP17N80C3 SPP17N80C3
Produktcode: 34777
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description Transistoren > MOSFET N-CH
Gehäuse: PG-TO220
Uds,V: 800 V
Idd,A: 17 A
Rds(on), Ohm: 0,29 Ohm
Ciss, pF/Qg, nC: 2300/88
JHGF: THT
auf Bestellung 15 Stück:
Lieferzeit 21-28 Tag (e)
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167N80 167N80 Hammond Manufacturing 167.pdf Power Transformers Power transformer, low voltage, enclosed chassis mount, 320VA 115 80VCT
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
1+188.36 EUR
10+159.49 EUR
25+154.12 EUR
50+150.46 EUR
100+148.32 EUR
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FQA7N80 FQA7N80 Fairchild Semiconductor FAIRS24241-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 800V 7.2A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3.6A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
auf Bestellung 780 Stücke:
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186+2.43 EUR
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FQA7N80C FQA7N80C Fairchild Semiconductor FAIRS24235-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 800V 7A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.5A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
auf Bestellung 24703 Stücke:
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FQA7N80C-F109 FQA7N80C-F109 onsemi fqa7n80c_f109-d.pdf Description: POWER MOSFET, N-CHANNEL, QFET, 8
Packaging: Bulk
Part Status: Active
auf Bestellung 12885 Stücke:
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FQPF7N80C FQPF7N80C Fairchild Semiconductor fqpf7n80c-d.pdf Description: POWER FIELD-EFFECT TRANSISTOR, 6
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.3A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
auf Bestellung 1000 Stücke:
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169+2.69 EUR
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G7N80F G7N80F Goford Semiconductor G7N80F.pdf Description: MOSFET N-CH 800V 7A 45W TO-220F
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1184 pF @ 400 V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.66 EUR
11+1.69 EUR
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IXFA7N80P IXFA7N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEBCFAAAAC138BF&compId=IXFA7N80P_IXFP7N80P.pdf?ci_sign=6abb9f9c357a935dbd0c4341d202268591747dda Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO263; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.44Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 250ns
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
9+7.95 EUR
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IXFA7N80P IXFA7N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEBCFAAAAC138BF&compId=IXFA7N80P_IXFP7N80P.pdf?ci_sign=6abb9f9c357a935dbd0c4341d202268591747dda Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO263; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.44Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 250ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)
9+7.95 EUR
50+2.86 EUR
100+2.6 EUR
500+2.56 EUR
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IXFA7N80P IXFA7N80P IXYS Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-7N80P-Datasheet.PDF?assetguid=B00D4E8D-827B-4A04-B106-292ED53206EE Description: MOSFET N-CH 800V 7A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.44Ohm @ 3.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V
auf Bestellung 207 Stücke:
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3+7.39 EUR
50+3.83 EUR
100+3.49 EUR
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IXFP7N80P IXFP7N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEBCFAAAAC138BF&compId=IXFA7N80P_IXFP7N80P.pdf?ci_sign=6abb9f9c357a935dbd0c4341d202268591747dda Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.44Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 250ns
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
22+3.27 EUR
Mindestbestellmenge: 22
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IXFP7N80P IXFP7N80P IXYS pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEBCFAAAAC138BF&compId=IXFA7N80P_IXFP7N80P.pdf?ci_sign=6abb9f9c357a935dbd0c4341d202268591747dda Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.44Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 250ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 27 Stücke:
Lieferzeit 7-14 Tag (e)
22+3.27 EUR
50+2.6 EUR
100+2.33 EUR
500+2.19 EUR
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IXFP7N80P IXFP7N80P IXYS Littelfuse_Discrete_MOSFETs_N_Channel_HiPerFETs_IXF_7N80P_Datasheet.PDF MOSFETs 7 Amps 800V 1.44 Rds
auf Bestellung 89 Stücke:
Lieferzeit 10-14 Tag (e)
1+7.22 EUR
10+4.35 EUR
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IXFP7N80P IXFP7N80P IXYS Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-7N80P-Datasheet.PDF?assetguid=B00D4E8D-827B-4A04-B106-292ED53206EE Description: MOSFET N-CH 800V 7A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.44Ohm @ 3.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V
auf Bestellung 247 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.27 EUR
50+3.97 EUR
100+3.88 EUR
Mindestbestellmenge: 3
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IXFX27N80Q IXFX27N80Q IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC5E93D821F820&compId=IXFK(X)27N80Q.pdf?ci_sign=8daef21b45c2446e7f867bb9111fde52758b8bbd Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Power dissipation: 481W
Case: PLUS247™
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
3+24.67 EUR
10+23.02 EUR
30+22.47 EUR
Mindestbestellmenge: 3
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IXFX27N80Q IXFX27N80Q IXYS pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC5E93D821F820&compId=IXFK(X)27N80Q.pdf?ci_sign=8daef21b45c2446e7f867bb9111fde52758b8bbd Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Power dissipation: 481W
Case: PLUS247™
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 39 Stücke:
Lieferzeit 7-14 Tag (e)
3+24.67 EUR
10+23.02 EUR
30+22.47 EUR
Mindestbestellmenge: 3
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IXFX27N80Q IXFX27N80Q IXYS Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-27N80Q-Datasheet.PDF?assetguid=8A073D63-78D0-4DED-AF8D-5593575C3C3C Description: MOSFET N-CH 800V 27A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 500mA, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
auf Bestellung 1075 Stücke:
Lieferzeit 10-14 Tag (e)
1+41.43 EUR
30+26.77 EUR
120+25.5 EUR
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MOT7N80F MOT TRANS ODPOWIEDNIK: MOT7N80F; MOT7N80F TO-220F MOT T7N80F MOT
Anzahl je Verpackung: 50 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
50+1.02 EUR
Mindestbestellmenge: 50
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MSJB17N80-TP MSJB17N80-TP MCC (Micro Commercial Components) MSJB17N80(D2-PAK).pdf Description: N-CHANNEL MOSFET, D2-PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 181W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
auf Bestellung 710 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.15 EUR
10+5.43 EUR
100+3.88 EUR
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SIHA17N80AE-GE3 SIHA17N80AE-GE3 Vishay / Siliconix siha17n80ae.pdf MOSFETs TO220 800V 7A N-CH MOSFET
auf Bestellung 1467 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.41 EUR
10+2.11 EUR
500+1.95 EUR
1000+1.92 EUR
2000+1.87 EUR
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SIHA17N80AE-GE3 SIHA17N80AE-GE3 Vishay Siliconix siha17n80ae.pdf Description: MOSFET N-CH 800V 7A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 100 V
auf Bestellung 997 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.45 EUR
10+2.14 EUR
100+2.11 EUR
500+1.94 EUR
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SIHA17N80AEF-GE3 SIHA17N80AEF-GE3 Vishay Siliconix siha17n80aef.pdf Description: EF SERIES POWER MOSFET WITH FAST
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 305mOhm @ 8.5A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 100 V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
3+5.98 EUR
10+3.93 EUR
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SIHA17N80E-GE3 SIHA17N80E-GE3 Vishay Siliconix siha17n80e.pdf Description: N-CHANNEL 800V
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+3.29 EUR
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SIHA17N80E-GE3 SIHA17N80E-GE3 Vishay Siliconix siha17n80e.pdf Description: N-CHANNEL 800V
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V
auf Bestellung 1980 Stücke:
Lieferzeit 10-14 Tag (e)
3+8.61 EUR
10+5.75 EUR
100+4.13 EUR
500+4.03 EUR
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SIHB17N80AE-GE3 SIHB17N80AE-GE3 Vishay Siliconix sihb17n80ae.pdf Description: MOSFET N-CH 800V 15A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 100 V
auf Bestellung 979 Stücke:
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100+2.47 EUR
500+2.01 EUR
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SIHB17N80AE-GE3 SIHB17N80AE-GE3 Vishay / Siliconix sihb17n80ae.pdf MOSFETs TO263 800V 15A N-CH MOSFET
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SIHB17N80AE-T1-GE3 VISHAY Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 39200 Stücke:
Lieferzeit 14-21 Tag (e)
800+2.12 EUR
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SIHB17N80E-GE3 SIHB17N80E-GE3 Vishay Semiconductors sihb17n80e.pdf MOSFETs 800V Vds 30V Vgs D2PAK (TO-263)
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SIHB17N80E-GE3 SIHB17N80E-GE3 Vishay Siliconix sihb17n80e.pdf Description: MOSFET N-CH 800V 15A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V
auf Bestellung 788 Stücke:
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SIHG17N80AE-GE3 SIHG17N80AE-GE3 Vishay Siliconix sihg17n80ae.pdf Description: MOSFET N-CH 800V 15A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 100 V
auf Bestellung 738 Stücke:
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SIHG17N80AE-GE3 SIHG17N80AE-GE3 Vishay / Siliconix sihg17n80ae.pdf MOSFETs TO247 800V 15A N-CH MOSFET
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SIHG17N80AEF-GE3 SIHG17N80AEF-GE3 Vishay Siliconix sihg17n80aef.pdf Description: E SERIES POWER MOSFET WITH FAST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 305mOhm @ 8.5A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 100 V
auf Bestellung 149 Stücke:
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SIHG17N80E-GE3 SIHG17N80E-GE3 Vishay / Siliconix sihg17n80e.pdf MOSFETs 800V Vds 30V Vgs TO-247AC
auf Bestellung 621 Stücke:
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1+9.56 EUR
10+6.64 EUR
100+5.35 EUR
500+4.77 EUR
1000+4.28 EUR
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SIHP17N80AE-GE3 SIHP17N80AE-GE3 Vishay Siliconix sihp17n80ae.pdf Description: MOSFET N-CH 800V 15A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 100 V
auf Bestellung 848 Stücke:
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50+2.52 EUR
100+2.41 EUR
500+1.97 EUR
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SIHP17N80AE-GE3 SIHP17N80AE-GE3 Vishay / Siliconix sihp17n80ae.pdf MOSFETs TO220 800V 15A N-CH MOSFET
auf Bestellung 1857 Stücke:
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1+4.59 EUR
10+2.53 EUR
100+2.43 EUR
500+1.99 EUR
1000+1.95 EUR
2000+1.9 EUR
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SIHP17N80AEF-GE3 SIHP17N80AEF-GE3 Vishay / Siliconix sihp17n80aef.pdf MOSFETs TO220 800V 15A N-CH MOSFET
auf Bestellung 1717 Stücke:
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1+4.89 EUR
10+3.57 EUR
100+2.5 EUR
500+2.04 EUR
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2000+1.97 EUR
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SIHP17N80AEF-GE3 SIHP17N80AEF-GE3 Vishay Siliconix sihp17n80aef.pdf Description: E SERIES POWER MOSFET WITH FAST
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 305mOhm @ 8.5A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 100 V
auf Bestellung 923 Stücke:
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10+3.56 EUR
100+2.48 EUR
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SIHP17N80E-BE3 SIHP17N80E-BE3 Vishay / Siliconix sihp17n80e.pdf MOSFETs TO220 800V 15A N-CH MOSFET
auf Bestellung 3926 Stücke:
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SIHP17N80E-GE3 SIHP17N80E-GE3 Vishay / Siliconix sihp17n80e.pdf MOSFETs 800V Vds 30V Vgs TO-220AB
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10+5.76 EUR
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SIHP17N80E-GE3 SIHP17N80E-GE3 Vishay Siliconix sihp17n80e.pdf Description: MOSFET N-CH 800V 15A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V
auf Bestellung 994 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.62 EUR
10+5.73 EUR
100+4.42 EUR
500+3.58 EUR
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SPA17N80C3 SPA17N80C3 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B3FFC5C5839651BF&compId=SPA17N80C3-DTE.pdf?ci_sign=fe1ec0eca04326ebd576e6c1ab6064af6db530e3 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 42W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 17A
Power dissipation: 42W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.36 EUR
21+3.49 EUR
Mindestbestellmenge: 17
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SPA17N80C3 SPA17N80C3 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B3FFC5C5839651BF&compId=SPA17N80C3-DTE.pdf?ci_sign=fe1ec0eca04326ebd576e6c1ab6064af6db530e3 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 42W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 17A
Power dissipation: 42W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 35 Stücke:
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100+3 EUR
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SPA17N80C3 SPA17N80C3 Infineon Technologies Infineon-SPA17N80C3-DS-v02_08-EN.pdf description MOSFETs N-Ch 800V 17A TO220FP-3 CoolMOS C3
auf Bestellung 3422 Stücke:
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1+7.41 EUR
10+4.91 EUR
100+3.91 EUR
500+3.41 EUR
1000+2.96 EUR
2500+2.8 EUR
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SPA17N80C3XK SPA17N80C3XK Infineon Technologies Infineon_SPP_A17N80C3_DS_v02_07_en.pdf MOSFETs N-Ch 800V 17A TO220FP-3 CoolMOS C3
auf Bestellung 455 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.14 EUR
10+4.8 EUR
100+3.89 EUR
500+3.4 EUR
1000+2.96 EUR
2500+2.8 EUR
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SPA17N80C3XKSA1 SPA17N80C3XKSA1 Infineon Technologies SPP_A17N80C3[1].Rev.2.6.pdf?folderId=db3a3043163797a6011638491238009b&fileId=db3a3043163797a60116385ea62e0101 Description: MOSFET N-CH 800V 17A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 25 V
auf Bestellung 313 Stücke:
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4+5.83 EUR
50+3.49 EUR
100+3.36 EUR
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SPA17N80C3XKSA1 SPA17N80C3XKSA1 Infineon Technologies Infineon-SPA17N80C3-DS-v02_08-EN.pdf MOSFETs N-Ch 800V 17A TO220FP-3 CoolMOS C3
auf Bestellung 422 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.49 EUR
25+3.43 EUR
100+3.33 EUR
500+2.8 EUR
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SPB17N80C3 SPB17N80C3 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B2B1C8B20D0EB1BF&compId=SPB17N80C3-DTE.pdf?ci_sign=7a9740a6d8782001fb1d2e3a766be0f2035a313f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 227W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 17A
Power dissipation: 227W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 325 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.23 EUR
13+5.51 EUR
25+4.95 EUR
100+4.69 EUR
Mindestbestellmenge: 12
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SPB17N80C3 SPB17N80C3 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B2B1C8B20D0EB1BF&compId=SPB17N80C3-DTE.pdf?ci_sign=7a9740a6d8782001fb1d2e3a766be0f2035a313f Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 227W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 17A
Power dissipation: 227W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 325 Stücke:
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13+5.51 EUR
25+4.95 EUR
100+4.69 EUR
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SPB17N80C3 Infineon Transistor N-Channel MOSFET; 800V; 20V; 670mOhm; 17A; 227W; -55°C ~ 150°C; SPB17N80C3 TSPB17n80c3
Anzahl je Verpackung: 5 Stücke
auf Bestellung 15 Stücke:
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5+8.92 EUR
Mindestbestellmenge: 5
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SPB17N80C3 SPB17N80C3 Infineon Technologies Infineon-SPB17N80C3-DS-v02_05-en.pdf MOSFETs N-Ch 800V 17A D2PAK-2 CoolMOS C3
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.97 EUR
10+4.61 EUR
100+3.63 EUR
500+3.54 EUR
1000+2.99 EUR
5000+2.59 EUR
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SPB17N80C3ATMA1 SPB17N80C3ATMA1 Infineon Technologies SPB17N80C3_rev2.3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42cc63d479f&location=.en.product.findProductTypeByName.html_dgdl_SPB17N80C3_rev2.3.pdf Description: MOSFET N-CH 800V 17A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V
auf Bestellung 714 Stücke:
Lieferzeit 10-14 Tag (e)
3+6.49 EUR
10+4.57 EUR
100+3.34 EUR
500+3.13 EUR
Mindestbestellmenge: 3
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SPB17N80C3ATMA1 SPB17N80C3ATMA1 Infineon Technologies Infineon-SPB17N80C3-DS-v02_05-en.pdf MOSFETs N-Ch 800V 17A D2PAK-2 CoolMOS C3
auf Bestellung 1589 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.67 EUR
10+4.07 EUR
100+3.24 EUR
500+3.15 EUR
1000+3.08 EUR
2000+2.87 EUR
5000+2.59 EUR
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SPP17N80C3 SPP17N80C3 INFINEON TECHNOLOGIES description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 350 Stücke:
Lieferzeit 14-21 Tag (e)
31+2.33 EUR
35+2.09 EUR
50+1.84 EUR
100+1.66 EUR
Mindestbestellmenge: 31
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SPP17N80C3 SPP17N80C3 INFINEON TECHNOLOGIES description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 350 Stücke:
Lieferzeit 7-14 Tag (e)
31+2.33 EUR
35+2.09 EUR
50+1.84 EUR
100+1.66 EUR
500+1.57 EUR
Mindestbestellmenge: 31
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SPP17N80C3 SPP17N80C3 Infineon Technologies description MOSFETs N-Ch 800V 17A TO220-3 CoolMOS C3
auf Bestellung 541 Stücke:
Lieferzeit 10-14 Tag (e)
1+5.07 EUR
10+5.05 EUR
100+4.15 EUR
500+3.52 EUR
1000+2.97 EUR
2500+2.92 EUR
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SPP17N80C3XKSA1 SPP17N80C3XKSA1 Infineon Technologies SPP_A17N80C3[1].Rev.2.6.pdf?folderId=db3a3043163797a6011638491238009b&fileId=db3a3043163797a60116385ea62e0101 MOSFETs N-Ch 800V 17A TO220-3 CoolMOS C3
auf Bestellung 437 Stücke:
Lieferzeit 10-14 Tag (e)
1+6.93 EUR
10+6.79 EUR
25+2.94 EUR
500+2.92 EUR
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SPP17N80C3XKSA1 SPP17N80C3XKSA1 Infineon Technologies SPP_A17N80C3[1].Rev.2.6.pdf?folderId=db3a3043163797a6011638491238009b&fileId=db3a3043163797a60116385ea62e0101 Description: MOSFET N-CH 800V 17A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 25 V
auf Bestellung 983 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.09 EUR
50+3.22 EUR
100+3.19 EUR
500+2.91 EUR
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SPW17N80C3 SPW17N80C3 INFINEON TECHNOLOGIES pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD74B604CA355EA&compId=SPW17N80C3.pdf?ci_sign=8964f39b04abcc8eed47c2e250888ed93a2c8204 description Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 227W; PG-TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 227W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
17+4.4 EUR
18+4.02 EUR
20+3.58 EUR
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SPA17N80C3
Produktcode: 29151
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description datsdheet-spa17n80c3.pdf
SPA17N80C3
Hersteller: Infineon
Transistoren > MOSFET N-CH
Gehäuse: TO-220
Uds,V: 800 V
Idd,A: 17 A
Rds(on), Ohm: 0,29 Ohm
Ciss, pF/Qg, nC: 2320/91
JHGF: THT
auf Bestellung 29 Stück:
Lieferzeit 21-28 Tag (e)
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SPB17N80C3
Produktcode: 37324
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spb17n80c3_rev25_ratio-48451.pdf
SPB17N80C3
Hersteller: Infineon
Transistoren > MOSFET N-CH
Gehäuse: D2Pak
Uds,V: 800
Idd,A: 11
Rds(on), Ohm: 0.25
Ciss, pF/Qg, nC: 2300/88
JHGF: SMD
auf Bestellung 9 Stück:
Lieferzeit 21-28 Tag (e)
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SPP17N80C3
Produktcode: 34777
zu Favoriten hinzufügen Lieblingsprodukt

description
SPP17N80C3
Transistoren > MOSFET N-CH
Gehäuse: PG-TO220
Uds,V: 800 V
Idd,A: 17 A
Rds(on), Ohm: 0,29 Ohm
Ciss, pF/Qg, nC: 2300/88
JHGF: THT
auf Bestellung 15 Stück:
Lieferzeit 21-28 Tag (e)
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167N80 167.pdf
167N80
Hersteller: Hammond Manufacturing
Power Transformers Power transformer, low voltage, enclosed chassis mount, 320VA 115 80VCT
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+188.36 EUR
10+159.49 EUR
25+154.12 EUR
50+150.46 EUR
100+148.32 EUR
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FQA7N80 FAIRS24241-1.pdf?t.download=true&u=5oefqw
FQA7N80
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 800V 7.2A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 3.6A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 25 V
auf Bestellung 780 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
186+2.43 EUR
Mindestbestellmenge: 186
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FQA7N80C FAIRS24235-1.pdf?t.download=true&u=5oefqw
FQA7N80C
Hersteller: Fairchild Semiconductor
Description: MOSFET N-CH 800V 7A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.5A, 10V
Power Dissipation (Max): 198W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-3P
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
auf Bestellung 24703 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
188+2.41 EUR
Mindestbestellmenge: 188
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FQA7N80C-F109 fqa7n80c_f109-d.pdf
FQA7N80C-F109
Hersteller: onsemi
Description: POWER MOSFET, N-CHANNEL, QFET, 8
Packaging: Bulk
Part Status: Active
auf Bestellung 12885 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
156+2.91 EUR
Mindestbestellmenge: 156
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FQPF7N80C fqpf7n80c-d.pdf
FQPF7N80C
Hersteller: Fairchild Semiconductor
Description: POWER FIELD-EFFECT TRANSISTOR, 6
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.6A (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.3A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220F-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
169+2.69 EUR
Mindestbestellmenge: 169
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G7N80F G7N80F.pdf
G7N80F
Hersteller: Goford Semiconductor
Description: MOSFET N-CH 800V 7A 45W TO-220F
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.8Ohm @ 2A, 10V
Power Dissipation (Max): 45W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1184 pF @ 400 V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.66 EUR
11+1.69 EUR
Mindestbestellmenge: 7
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IXFA7N80P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEBCFAAAAC138BF&compId=IXFA7N80P_IXFP7N80P.pdf?ci_sign=6abb9f9c357a935dbd0c4341d202268591747dda
IXFA7N80P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO263; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.44Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 250ns
auf Bestellung 9 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
9+7.95 EUR
Mindestbestellmenge: 9
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IXFA7N80P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEBCFAAAAC138BF&compId=IXFA7N80P_IXFP7N80P.pdf?ci_sign=6abb9f9c357a935dbd0c4341d202268591747dda
IXFA7N80P
Hersteller: IXYS
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO263; 250ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: TO263
Gate-source voltage: ±30V
On-state resistance: 1.44Ω
Mounting: SMD
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 250ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 9 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
9+7.95 EUR
50+2.86 EUR
100+2.6 EUR
500+2.56 EUR
Mindestbestellmenge: 9
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IXFA7N80P Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-7N80P-Datasheet.PDF?assetguid=B00D4E8D-827B-4A04-B106-292ED53206EE
IXFA7N80P
Hersteller: IXYS
Description: MOSFET N-CH 800V 7A TO263
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.44Ohm @ 3.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-263AA (IXFA)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V
auf Bestellung 207 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.39 EUR
50+3.83 EUR
100+3.49 EUR
Mindestbestellmenge: 3
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IXFP7N80P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEBCFAAAAC138BF&compId=IXFA7N80P_IXFP7N80P.pdf?ci_sign=6abb9f9c357a935dbd0c4341d202268591747dda
IXFP7N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.44Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 250ns
auf Bestellung 27 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
22+3.27 EUR
Mindestbestellmenge: 22
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IXFP7N80P pVersion=0046&contRep=ZT&docId=005056AB82531EE98CEBCFAAAAC138BF&compId=IXFA7N80P_IXFP7N80P.pdf?ci_sign=6abb9f9c357a935dbd0c4341d202268591747dda
IXFP7N80P
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; Polar™; unipolar; 800V; 7A; 200W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 7A
Power dissipation: 200W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 1.44Ω
Mounting: THT
Gate charge: 32nC
Kind of package: tube
Kind of channel: enhancement
Technology: HiPerFET™; Polar™
Reverse recovery time: 250ns
Anzahl je Verpackung: 1 Stücke
auf Bestellung 27 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
22+3.27 EUR
50+2.6 EUR
100+2.33 EUR
500+2.19 EUR
Mindestbestellmenge: 22
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IXFP7N80P Littelfuse_Discrete_MOSFETs_N_Channel_HiPerFETs_IXF_7N80P_Datasheet.PDF
IXFP7N80P
Hersteller: IXYS
MOSFETs 7 Amps 800V 1.44 Rds
auf Bestellung 89 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.22 EUR
10+4.35 EUR
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IXFP7N80P Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-7N80P-Datasheet.PDF?assetguid=B00D4E8D-827B-4A04-B106-292ED53206EE
IXFP7N80P
Hersteller: IXYS
Description: MOSFET N-CH 800V 7A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 1.44Ohm @ 3.5A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 5V @ 1mA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1890 pF @ 25 V
auf Bestellung 247 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.27 EUR
50+3.97 EUR
100+3.88 EUR
Mindestbestellmenge: 3
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IXFX27N80Q pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC5E93D821F820&compId=IXFK(X)27N80Q.pdf?ci_sign=8daef21b45c2446e7f867bb9111fde52758b8bbd
IXFX27N80Q
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Power dissipation: 481W
Case: PLUS247™
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 39 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
3+24.67 EUR
10+23.02 EUR
30+22.47 EUR
Mindestbestellmenge: 3
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IXFX27N80Q pVersion=0046&contRep=ZT&docId=005056AB82531ED9A3BC5E93D821F820&compId=IXFK(X)27N80Q.pdf?ci_sign=8daef21b45c2446e7f867bb9111fde52758b8bbd
IXFX27N80Q
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 27A; 481W; PLUS247™
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 27A
Power dissipation: 481W
Case: PLUS247™
On-state resistance: 0.32Ω
Mounting: THT
Gate charge: 170nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
auf Bestellung 39 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
3+24.67 EUR
10+23.02 EUR
30+22.47 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
IXFX27N80Q Littelfuse-Discrete-MOSFETs-N-Channel-HiPerFETs-IXF-27N80Q-Datasheet.PDF?assetguid=8A073D63-78D0-4DED-AF8D-5593575C3C3C
IXFX27N80Q
Hersteller: IXYS
Description: MOSFET N-CH 800V 27A PLUS247-3
Packaging: Tube
Package / Case: TO-247-3 Variant
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
Rds On (Max) @ Id, Vgs: 320mOhm @ 500mA, 10V
Power Dissipation (Max): 500W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 4mA
Supplier Device Package: PLUS247™-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 25 V
auf Bestellung 1075 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+41.43 EUR
30+26.77 EUR
120+25.5 EUR
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MOT7N80F
Hersteller: MOT
TRANS ODPOWIEDNIK: MOT7N80F; MOT7N80F TO-220F MOT T7N80F MOT
Anzahl je Verpackung: 50 Stücke
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
50+1.02 EUR
Mindestbestellmenge: 50
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MSJB17N80-TP MSJB17N80(D2-PAK).pdf
MSJB17N80-TP
Hersteller: MCC (Micro Commercial Components)
Description: N-CHANNEL MOSFET, D2-PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 181W
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D2PAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1830 pF @ 25 V
auf Bestellung 710 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.15 EUR
10+5.43 EUR
100+3.88 EUR
Mindestbestellmenge: 3
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SIHA17N80AE-GE3 siha17n80ae.pdf
SIHA17N80AE-GE3
Hersteller: Vishay / Siliconix
MOSFETs TO220 800V 7A N-CH MOSFET
auf Bestellung 1467 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.41 EUR
10+2.11 EUR
500+1.95 EUR
1000+1.92 EUR
2000+1.87 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
SIHA17N80AE-GE3 siha17n80ae.pdf
SIHA17N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 7A TO220
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 100 V
auf Bestellung 997 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.45 EUR
10+2.14 EUR
100+2.11 EUR
500+1.94 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
SIHA17N80AEF-GE3 siha17n80aef.pdf
SIHA17N80AEF-GE3
Hersteller: Vishay Siliconix
Description: EF SERIES POWER MOSFET WITH FAST
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Tc)
Rds On (Max) @ Id, Vgs: 305mOhm @ 8.5A, 10V
Power Dissipation (Max): 34W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 100 V
auf Bestellung 50 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+5.98 EUR
10+3.93 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
SIHA17N80E-GE3 siha17n80e.pdf
SIHA17N80E-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 800V
Packaging: Tape & Reel (TR)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+3.29 EUR
Mindestbestellmenge: 1000
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SIHA17N80E-GE3 siha17n80e.pdf
SIHA17N80E-GE3
Hersteller: Vishay Siliconix
Description: N-CHANNEL 800V
Packaging: Cut Tape (CT)
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 35W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220 Full Pack
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V
auf Bestellung 1980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.61 EUR
10+5.75 EUR
100+4.13 EUR
500+4.03 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
SIHB17N80AE-GE3 sihb17n80ae.pdf
SIHB17N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 15A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 100 V
auf Bestellung 979 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.4 EUR
50+2.59 EUR
100+2.47 EUR
500+2.01 EUR
Mindestbestellmenge: 4
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SIHB17N80AE-GE3 sihb17n80ae.pdf
SIHB17N80AE-GE3
Hersteller: Vishay / Siliconix
MOSFETs TO263 800V 15A N-CH MOSFET
auf Bestellung 9793 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.42 EUR
10+2.6 EUR
100+2.48 EUR
500+2.02 EUR
1000+1.87 EUR
2000+1.85 EUR
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SIHB17N80AE-T1-GE3
Hersteller: VISHAY
Category: SMD N channel transistors
Description: Transistor: N-MOSFET
Type of transistor: N-MOSFET
auf Bestellung 39200 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
800+2.12 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
SIHB17N80E-GE3 sihb17n80e.pdf
SIHB17N80E-GE3
Hersteller: Vishay Semiconductors
MOSFETs 800V Vds 30V Vgs D2PAK (TO-263)
auf Bestellung 7234 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.77 EUR
10+5.03 EUR
100+4.33 EUR
1000+4.21 EUR
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SIHB17N80E-GE3 sihb17n80e.pdf
SIHB17N80E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 15A D2PAK
Packaging: Tube
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V
auf Bestellung 788 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.76 EUR
10+5.03 EUR
100+4.31 EUR
500+4.07 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
SIHG17N80AE-GE3 sihg17n80ae.pdf
SIHG17N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 15A TO247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 100 V
auf Bestellung 738 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.49 EUR
25+3.06 EUR
100+2.87 EUR
500+2.35 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
SIHG17N80AE-GE3 sihg17n80ae.pdf
SIHG17N80AE-GE3
Hersteller: Vishay / Siliconix
MOSFETs TO247 800V 15A N-CH MOSFET
auf Bestellung 1580 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.51 EUR
10+3.08 EUR
100+2.87 EUR
500+2.34 EUR
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SIHG17N80AEF-GE3 sihg17n80aef.pdf
SIHG17N80AEF-GE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET WITH FAST
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 305mOhm @ 8.5A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247AC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 100 V
auf Bestellung 149 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.32 EUR
10+4.16 EUR
100+2.93 EUR
Mindestbestellmenge: 3
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SIHG17N80E-GE3 sihg17n80e.pdf
SIHG17N80E-GE3
Hersteller: Vishay / Siliconix
MOSFETs 800V Vds 30V Vgs TO-247AC
auf Bestellung 621 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+9.56 EUR
10+6.64 EUR
100+5.35 EUR
500+4.77 EUR
1000+4.28 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SIHP17N80AE-GE3 sihp17n80ae.pdf
SIHP17N80AE-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 15A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 100 V
auf Bestellung 848 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.59 EUR
50+2.52 EUR
100+2.41 EUR
500+1.97 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
SIHP17N80AE-GE3 sihp17n80ae.pdf
SIHP17N80AE-GE3
Hersteller: Vishay / Siliconix
MOSFETs TO220 800V 15A N-CH MOSFET
auf Bestellung 1857 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.59 EUR
10+2.53 EUR
100+2.43 EUR
500+1.99 EUR
1000+1.95 EUR
2000+1.9 EUR
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SIHP17N80AEF-GE3 sihp17n80aef.pdf
SIHP17N80AEF-GE3
Hersteller: Vishay / Siliconix
MOSFETs TO220 800V 15A N-CH MOSFET
auf Bestellung 1717 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.89 EUR
10+3.57 EUR
100+2.5 EUR
500+2.04 EUR
1000+2.02 EUR
2000+1.97 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SIHP17N80AEF-GE3 sihp17n80aef.pdf
SIHP17N80AEF-GE3
Hersteller: Vishay Siliconix
Description: E SERIES POWER MOSFET WITH FAST
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 305mOhm @ 8.5A, 10V
Power Dissipation (Max): 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1300 pF @ 100 V
auf Bestellung 923 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.88 EUR
10+3.56 EUR
100+2.48 EUR
500+2.03 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
SIHP17N80E-BE3 sihp17n80e.pdf
SIHP17N80E-BE3
Hersteller: Vishay / Siliconix
MOSFETs TO220 800V 15A N-CH MOSFET
auf Bestellung 3926 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.76 EUR
10+3.8 EUR
100+3.64 EUR
500+3.48 EUR
1000+3.43 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SIHP17N80E-GE3 sihp17n80e.pdf
SIHP17N80E-GE3
Hersteller: Vishay / Siliconix
MOSFETs 800V Vds 30V Vgs TO-220AB
auf Bestellung 2426 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.59 EUR
10+5.76 EUR
100+4.45 EUR
500+4.44 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SIHP17N80E-GE3 sihp17n80e.pdf
SIHP17N80E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 800V 15A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 122 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2408 pF @ 100 V
auf Bestellung 994 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.62 EUR
10+5.73 EUR
100+4.42 EUR
500+3.58 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
SPA17N80C3 description pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B3FFC5C5839651BF&compId=SPA17N80C3-DTE.pdf?ci_sign=fe1ec0eca04326ebd576e6c1ab6064af6db530e3
SPA17N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 42W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 17A
Power dissipation: 42W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 35 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.36 EUR
21+3.49 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
SPA17N80C3 description pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B3FFC5C5839651BF&compId=SPA17N80C3-DTE.pdf?ci_sign=fe1ec0eca04326ebd576e6c1ab6064af6db530e3
SPA17N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 42W; PG-TO220-3-FP
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 17A
Power dissipation: 42W
Case: PG-TO220-3-FP
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 35 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
17+4.36 EUR
21+3.49 EUR
50+3.05 EUR
100+3 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
SPA17N80C3 description Infineon-SPA17N80C3-DS-v02_08-EN.pdf
SPA17N80C3
Hersteller: Infineon Technologies
MOSFETs N-Ch 800V 17A TO220FP-3 CoolMOS C3
auf Bestellung 3422 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+7.41 EUR
10+4.91 EUR
100+3.91 EUR
500+3.41 EUR
1000+2.96 EUR
2500+2.8 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SPA17N80C3XK Infineon_SPP_A17N80C3_DS_v02_07_en.pdf
SPA17N80C3XK
Hersteller: Infineon Technologies
MOSFETs N-Ch 800V 17A TO220FP-3 CoolMOS C3
auf Bestellung 455 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.14 EUR
10+4.8 EUR
100+3.89 EUR
500+3.4 EUR
1000+2.96 EUR
2500+2.8 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SPA17N80C3XKSA1 SPP_A17N80C3[1].Rev.2.6.pdf?folderId=db3a3043163797a6011638491238009b&fileId=db3a3043163797a60116385ea62e0101
SPA17N80C3XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 17A TO220-3
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO220-3-31
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 25 V
auf Bestellung 313 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.83 EUR
50+3.49 EUR
100+3.36 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
SPA17N80C3XKSA1 Infineon-SPA17N80C3-DS-v02_08-EN.pdf
SPA17N80C3XKSA1
Hersteller: Infineon Technologies
MOSFETs N-Ch 800V 17A TO220FP-3 CoolMOS C3
auf Bestellung 422 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.49 EUR
25+3.43 EUR
100+3.33 EUR
500+2.8 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SPB17N80C3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B2B1C8B20D0EB1BF&compId=SPB17N80C3-DTE.pdf?ci_sign=7a9740a6d8782001fb1d2e3a766be0f2035a313f
SPB17N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 227W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 17A
Power dissipation: 227W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 325 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
12+6.23 EUR
13+5.51 EUR
25+4.95 EUR
100+4.69 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
SPB17N80C3 pVersion=0046&contRep=ZT&docId=005056AB752F1ED5B2B1C8B20D0EB1BF&compId=SPB17N80C3-DTE.pdf?ci_sign=7a9740a6d8782001fb1d2e3a766be0f2035a313f
SPB17N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 17A; 227W; PG-TO263-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 17A
Power dissipation: 227W
Case: PG-TO263-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: SMD
Kind of channel: enhancement
Technology: CoolMOS™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 325 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
12+6.23 EUR
13+5.51 EUR
25+4.95 EUR
100+4.69 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
SPB17N80C3
Hersteller: Infineon
Transistor N-Channel MOSFET; 800V; 20V; 670mOhm; 17A; 227W; -55°C ~ 150°C; SPB17N80C3 TSPB17n80c3
Anzahl je Verpackung: 5 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
5+8.92 EUR
Mindestbestellmenge: 5
Im Einkaufswagen  Stück im Wert von  UAH
SPB17N80C3 Infineon-SPB17N80C3-DS-v02_05-en.pdf
SPB17N80C3
Hersteller: Infineon Technologies
MOSFETs N-Ch 800V 17A D2PAK-2 CoolMOS C3
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.97 EUR
10+4.61 EUR
100+3.63 EUR
500+3.54 EUR
1000+2.99 EUR
5000+2.59 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SPB17N80C3ATMA1 SPB17N80C3_rev2.3.pdf?folderId=db3a304412b407950112b408e8c90004&fileId=db3a304412b407950112b42cc63d479f&location=.en.product.findProductTypeByName.html_dgdl_SPB17N80C3_rev2.3.pdf
SPB17N80C3ATMA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 17A TO263-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 227W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO263-3-2
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2300 pF @ 100 V
auf Bestellung 714 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.49 EUR
10+4.57 EUR
100+3.34 EUR
500+3.13 EUR
Mindestbestellmenge: 3
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SPB17N80C3ATMA1 Infineon-SPB17N80C3-DS-v02_05-en.pdf
SPB17N80C3ATMA1
Hersteller: Infineon Technologies
MOSFETs N-Ch 800V 17A D2PAK-2 CoolMOS C3
auf Bestellung 1589 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.67 EUR
10+4.07 EUR
100+3.24 EUR
500+3.15 EUR
1000+3.08 EUR
2000+2.87 EUR
5000+2.59 EUR
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SPP17N80C3 description
SPP17N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 350 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
31+2.33 EUR
35+2.09 EUR
50+1.84 EUR
100+1.66 EUR
Mindestbestellmenge: 31
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SPP17N80C3 description
SPP17N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 208W; PG-TO220-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 208W
Case: PG-TO220-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
Anzahl je Verpackung: 1 Stücke
auf Bestellung 350 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis
31+2.33 EUR
35+2.09 EUR
50+1.84 EUR
100+1.66 EUR
500+1.57 EUR
Mindestbestellmenge: 31
Im Einkaufswagen  Stück im Wert von  UAH
SPP17N80C3 description
SPP17N80C3
Hersteller: Infineon Technologies
MOSFETs N-Ch 800V 17A TO220-3 CoolMOS C3
auf Bestellung 541 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+5.07 EUR
10+5.05 EUR
100+4.15 EUR
500+3.52 EUR
1000+2.97 EUR
2500+2.92 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SPP17N80C3XKSA1 SPP_A17N80C3[1].Rev.2.6.pdf?folderId=db3a3043163797a6011638491238009b&fileId=db3a3043163797a60116385ea62e0101
SPP17N80C3XKSA1
Hersteller: Infineon Technologies
MOSFETs N-Ch 800V 17A TO220-3 CoolMOS C3
auf Bestellung 437 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+6.93 EUR
10+6.79 EUR
25+2.94 EUR
500+2.92 EUR
Im Einkaufswagen  Stück im Wert von  UAH
SPP17N80C3XKSA1 SPP_A17N80C3[1].Rev.2.6.pdf?folderId=db3a3043163797a6011638491238009b&fileId=db3a3043163797a60116385ea62e0101
SPP17N80C3XKSA1
Hersteller: Infineon Technologies
Description: MOSFET N-CH 800V 17A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 11A, 10V
Power Dissipation (Max): 208W (Tc)
Vgs(th) (Max) @ Id: 3.9V @ 1mA
Supplier Device Package: PG-TO220-3-1
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 177 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2320 pF @ 25 V
auf Bestellung 983 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.09 EUR
50+3.22 EUR
100+3.19 EUR
500+2.91 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
SPW17N80C3 description pVersion=0046&contRep=ZT&docId=005056AB752F1ED49FD74B604CA355EA&compId=SPW17N80C3.pdf?ci_sign=8964f39b04abcc8eed47c2e250888ed93a2c8204
SPW17N80C3
Hersteller: INFINEON TECHNOLOGIES
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 800V; 11A; 227W; PG-TO247-3
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 800V
Drain current: 11A
Power dissipation: 227W
Case: PG-TO247-3
Gate-source voltage: ±20V
On-state resistance: 0.29Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhancement
Technology: CoolMOS™
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
17+4.4 EUR
18+4.02 EUR
20+3.58 EUR
Mindestbestellmenge: 17
Im Einkaufswagen  Stück im Wert von  UAH
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