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Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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2N5551 Produktcode: 193606 |
Hottech |
Transistoren > Bipolar-Transistoren NPN Gehäuse: TO-92 fT: 300 MHz Uceo,V: 160 V Ucbo,V: 180 V Ic,A: 0,6 A ZCODE: THT |
auf Bestellung 1678 Stück: Lieferzeit 21-28 Tag (e)erwartet 30 Stück: |
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2N5551 (Bipolartransistor NPN) Produktcode: 31024 |
Fairchild |
Transistoren > Bipolar-Transistoren NPN Gehäuse: TO-92 fT: 300 MHz Uceo,V: 160 Ucbo,V: 180 Ic,A: 0,6 h21: 250 ZCODE: THT |
verfügbar: 36 Stück
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2N5551-Y (Bipolartransistor NPN) Produktcode: 1459 |
Philips |
Transistoren > Bipolar-Transistoren NPN Gehäuse: TO-92 fT: 300 MHz Uceo,V: 160 Ucbo,V: 180 Ic,A: 0,6 h21: 250 |
verfügbar: 120 Stück
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N555 | TI | SOP |
auf Bestellung 110 Stücke: Lieferzeit 21-28 Tag (e) |
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N555 | TI | 04+ SOP |
auf Bestellung 2188 Stücke: Lieferzeit 21-28 Tag (e) |
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N555 | TI | SOP8 |
auf Bestellung 119 Stücke: Lieferzeit 21-28 Tag (e) |
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N555 | TI | 09+ SOP8 |
auf Bestellung 1215 Stücke: Lieferzeit 21-28 Tag (e) |
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N555 | TI | MSOP8 |
auf Bestellung 900 Stücke: Lieferzeit 21-28 Tag (e) |
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N555D | PHILIPS | 04+ |
auf Bestellung 2369 Stücke: Lieferzeit 21-28 Tag (e) |
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1N5550 | Microchip Technology | Rectifiers Std Rectifier _ B-Body |
auf Bestellung 156 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5550 | Microchip Technology |
Description: DIODE GEN PURP 200V 3A AXIAL Packaging: Bulk Package / Case: B, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 200 V |
auf Bestellung 272 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5550US | Microchip Technology | Rectifiers Std Rectifier _ B-Body Sq. Melf |
auf Bestellung 105 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5551 | Microchip Technology | Rectifiers Std Rectifier _ B-Body |
auf Bestellung 193 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5551US | Microchip Technology |
Description: DIODE GEN PURP 400V 3A D-5B Packaging: Bulk Package / Case: SQ-MELF, E Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: D-5B Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 400 V |
auf Bestellung 190 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5551US | Microchip Technology | Rectifiers Std Rectifier _ B-Body Sq. Melf |
auf Bestellung 10 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5552 | Microchip Technology | Rectifier Diode Switching 600V 5A 2000ns 2-Pin Case E Bag |
auf Bestellung 76 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5552 | Microchip Technology | Rectifiers Std Rectifier _ B-Body |
auf Bestellung 11664 Stücke: Lieferzeit 178-182 Tag (e) |
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1N5552US | Microchip Technology | Rectifiers Std Rectifier _ B-Body Sq. Melf |
auf Bestellung 241 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5552US/TR | Microchip Technology | Rectifiers Std Rectifier _ B-Body Sq. Melf |
auf Bestellung 170 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5553 | Microchip Technology | Rectifiers Std Rectifier _ B-Body |
auf Bestellung 408 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5553 | Microchip Technology |
Description: DIODE GEN PURP 800V 3A AXIAL Packaging: Bulk Package / Case: B, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
auf Bestellung 328 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5553US | Microchip Technology |
Description: DIODE GEN PURP 800V 3A B SQ-MELF Packaging: Bulk Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 800 V |
auf Bestellung 47 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5554 | Microchip Technology |
Description: DIODE GEN PURP 1KV 3A AXIAL Packaging: Bulk Package / Case: B, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, Axial Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 1000 V |
auf Bestellung 333 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5554 | Microchip Technology | Rectifiers Std Rectifier _ B-Body |
auf Bestellung 264 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5554US | Microchip Technology | Rectifiers Std Rectifier _ B-Body Sq. Melf |
auf Bestellung 199 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5554US | Microchip Technology |
Description: DIODE GEN PURP 1KV 3A B SQ-MELF Packaging: Bulk Package / Case: SQ-MELF, B Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Current - Average Rectified (Io): 3A Supplier Device Package: B, SQ-MELF Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A Current - Reverse Leakage @ Vr: 1 µA @ 1000 V |
auf Bestellung 100 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5554US/TR | Microchip Technology | Surface Mount Standard Recovery Glass Rectifiers |
auf Bestellung 29 Stücke: Lieferzeit 14-21 Tag (e) |
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1N5555 | Microchip Technology |
Description: TVS DIODE 30.5VWM 47.5VC DO13 Packaging: Bulk Package / Case: DO-13 Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 32A Voltage - Reverse Standoff (Typ): 30.5V Supplier Device Package: DO-13 Unidirectional Channels: 1 Voltage - Breakdown (Min): 33V Voltage - Clamping (Max) @ Ipp: 47.5V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active |
auf Bestellung 52 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5555 | Microchip Technology | ESD Suppressors / TVS Diodes Uni-Directional TVS _ DO-13 |
auf Bestellung 12 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5556 | Microchip Technology |
Description: TVS DIODE 40.3VWM 63.5VC DO13 Packaging: Bulk Package / Case: DO-13 Mounting Type: Through Hole Type: Zener Operating Temperature: -65°C ~ 175°C (TJ) Applications: General Purpose Current - Peak Pulse (10/1000µs): 24A Voltage - Reverse Standoff (Typ): 40.3V Supplier Device Package: DO-13 Unidirectional Channels: 1 Voltage - Breakdown (Min): 43.7V Voltage - Clamping (Max) @ Ipp: 63.5V Power - Peak Pulse: 1500W (1.5kW) Power Line Protection: No Part Status: Active |
auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5556 | Microchip Technology | ESD Suppressors / TVS Diodes Uni-Directional TVS _ DO-13 |
auf Bestellung 438 Stücke: Lieferzeit 10-14 Tag (e) |
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1N5558 | Microchip Technology | ESD Suppressors / TVS Diodes Uni-Directional TVS _ DO-13 |
auf Bestellung 16 Stücke: Lieferzeit 10-14 Tag (e) |
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2N5550 | LUGUANG ELECTRONIC |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 140V; 0.6A; 0.625W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 140V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Current gain: 20...250 Mounting: THT Frequency: 100...300MHz |
auf Bestellung 2665 Stücke: Lieferzeit 14-21 Tag (e) |
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2N5550 | CDIL |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 140V; 0.6A; 625mW/1.5W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 140V Collector current: 0.6A Power dissipation: 0.625/1.5W Case: TO92 Current gain: 20...250 Mounting: THT Frequency: 100...300MHz |
auf Bestellung 4959 Stücke: Lieferzeit 14-21 Tag (e) |
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2N5550 | CDIL |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 140V; 0.6A; 625mW/1.5W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 140V Collector current: 0.6A Power dissipation: 0.625/1.5W Case: TO92 Current gain: 20...250 Mounting: THT Frequency: 100...300MHz Anzahl je Verpackung: 25 Stücke |
auf Bestellung 4959 Stücke: Lieferzeit 7-14 Tag (e) |
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2N5550 | LUGUANG ELECTRONIC |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 140V; 0.6A; 0.625W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 140V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Current gain: 20...250 Mounting: THT Frequency: 100...300MHz Anzahl je Verpackung: 5 Stücke |
auf Bestellung 2665 Stücke: Lieferzeit 7-14 Tag (e) |
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2N5550 | LGE |
Trans GP BJT NPN 140V 0.6A 625mW 3-Pin TO-92 Fan-Fold 2N5550G 2N5550RLRPG 2N5550TA 2N5550TAR 2N5550TFR 2N5550-LGE 2N5550 T2N5550 Anzahl je Verpackung: 500 Stücke |
auf Bestellung 1000 Stücke: Lieferzeit 7-14 Tag (e) |
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2N5550 PBFREE | Central Semiconductor | Bipolar Transistors - BJT NPN Gen Pur SS |
auf Bestellung 9713 Stücke: Lieferzeit 10-14 Tag (e) |
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2N5550/D26Z | Fairchild Semiconductor |
Description: TRANS NPN 140V 0.6A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 625 mW |
auf Bestellung 24000 Stücke: Lieferzeit 10-14 Tag (e) |
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2N5550RLRA | onsemi |
Description: TRANS NPN 140V 0.6A TO92 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TO-92 (TO-226) Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 625 mW |
auf Bestellung 16000 Stücke: Lieferzeit 10-14 Tag (e) |
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2N5550RLRAG | onsemi |
Description: TRANS NPN 140V 0.6A TO92 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TO-92 (TO-226) Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 625 mW |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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2N5550RLRP | onsemi |
Description: TRANS NPN 140V 0.6A TO92 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TO-92 (TO-226) Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 625 mW |
auf Bestellung 164000 Stücke: Lieferzeit 10-14 Tag (e) |
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2N5550TA | onsemi / Fairchild | Bipolar Transistors - BJT NPN Si Transistor Epitaxial |
auf Bestellung 8146 Stücke: Lieferzeit 10-14 Tag (e) |
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2N5550TA | onsemi |
Description: TRANS NPN 140V 0.6A TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 625 mW |
auf Bestellung 3474 Stücke: Lieferzeit 10-14 Tag (e) |
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2N5550TA | onsemi |
Description: TRANS NPN 140V 0.6A TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 625 mW |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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2N5550TA | Fairchild Semiconductor |
Description: TRANS NPN 140V 0.6A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 625 mW |
auf Bestellung 33620 Stücke: Lieferzeit 10-14 Tag (e) |
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2N5550TAR | onsemi / Fairchild | Bipolar Transistors - BJT NPN Si Transistor Epitaxial |
auf Bestellung 7235 Stücke: Lieferzeit 10-14 Tag (e) |
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2N5550TAR | onsemi |
Description: TRANS NPN 140V 0.6A TO92-3 Packaging: Tape & Box (TB) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 625 mW |
auf Bestellung 134000 Stücke: Lieferzeit 10-14 Tag (e) |
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2N5550TAR | onsemi |
Description: TRANS NPN 140V 0.6A TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 625 mW |
auf Bestellung 105644 Stücke: Lieferzeit 10-14 Tag (e) |
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2N5550TF | Fairchild Semiconductor |
Description: TRANS NPN 140V 0.6A TO92-3 Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TO-92-3 Part Status: Obsolete Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 625 mW |
auf Bestellung 29681 Stücke: Lieferzeit 10-14 Tag (e) |
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2N5550TFR | onsemi |
Description: TRANS NPN 140V 0.6A TO92-3 Packaging: Tape & Reel (TR) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 625 mW |
auf Bestellung 120000 Stücke: Lieferzeit 10-14 Tag (e) |
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2N5550TFR | Fairchild Semiconductor |
Description: SMALL SIGNAL BIPOLAR TRANSISTOR, Packaging: Bulk Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TO-92-3 Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 625 mW |
auf Bestellung 22874 Stücke: Lieferzeit 10-14 Tag (e) |
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2N5550TFR | onsemi / Fairchild | Bipolar Transistors - BJT NPN Si Transistor Epitaxial |
auf Bestellung 9366 Stücke: Lieferzeit 10-14 Tag (e) |
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2N5550TFR | onsemi |
Description: TRANS NPN 140V 0.6A TO92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V Frequency - Transition: 300MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 600 mA Voltage - Collector Emitter Breakdown (Max): 140 V Power - Max: 625 mW |
auf Bestellung 121057 Stücke: Lieferzeit 10-14 Tag (e) |
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2N5551 | DIOTEC SEMICONDUCTOR |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 160V; 0.6A; 625mW; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 0.6A Power dissipation: 0.625W Case: TO92 Mounting: THT Kind of package: Ammo Pack Frequency: 100MHz |
auf Bestellung 25900 Stücke: Lieferzeit 14-21 Tag (e) |
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2N5551 | CDIL |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625/15W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 0.6A Power dissipation: 0.625/15W Case: TO92 Current gain: 30...250 Mounting: THT Frequency: 100...300MHz |
auf Bestellung 1975 Stücke: Lieferzeit 14-21 Tag (e) |
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2N5551 | MIC |
NPN 600mA 160V 625mW 2N5551 T2N5551 Anzahl je Verpackung: 1000 Stücke |
auf Bestellung 5000 Stücke: Lieferzeit 7-14 Tag (e) |
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2N5551 | HOTTECH |
NPN 600mA 160V 625mW 2N5551 T2N5551 Anzahl je Verpackung: 1000 Stücke |
auf Bestellung 1030 Stücke: Lieferzeit 7-14 Tag (e) |
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2N5551 | CDIL |
Category: NPN THT transistors Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625/15W; TO92 Type of transistor: NPN Polarisation: bipolar Collector-emitter voltage: 160V Collector current: 0.6A Power dissipation: 0.625/15W Case: TO92 Current gain: 30...250 Mounting: THT Frequency: 100...300MHz Anzahl je Verpackung: 25 Stücke |
auf Bestellung 1975 Stücke: Lieferzeit 7-14 Tag (e) |
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2N5551 | JSMicro Semiconductor |
Transistor NPN; 300; 350mW; 160V; 600mA; 300MHz; -55°C ~ 150°C; Equivalent: 2N5551,412; 2N5551-BP; 2N5551BU; 2N5551G; 2N5551 JSMICRO T2N5551 JSM Anzahl je Verpackung: 1000 Stücke |
auf Bestellung 2000 Stücke: Lieferzeit 7-14 Tag (e) |
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2N5551 Produktcode: 193606 |
Hersteller: Hottech
Transistoren > Bipolar-Transistoren NPN
Gehäuse: TO-92
fT: 300 MHz
Uceo,V: 160 V
Ucbo,V: 180 V
Ic,A: 0,6 A
ZCODE: THT
Transistoren > Bipolar-Transistoren NPN
Gehäuse: TO-92
fT: 300 MHz
Uceo,V: 160 V
Ucbo,V: 180 V
Ic,A: 0,6 A
ZCODE: THT
auf Bestellung 1678 Stück:
Lieferzeit 21-28 Tag (e)erwartet 30 Stück:
2N5551 (Bipolartransistor NPN) Produktcode: 31024 |
Hersteller: Fairchild
Transistoren > Bipolar-Transistoren NPN
Gehäuse: TO-92
fT: 300 MHz
Uceo,V: 160
Ucbo,V: 180
Ic,A: 0,6
h21: 250
ZCODE: THT
Transistoren > Bipolar-Transistoren NPN
Gehäuse: TO-92
fT: 300 MHz
Uceo,V: 160
Ucbo,V: 180
Ic,A: 0,6
h21: 250
ZCODE: THT
verfügbar: 36 Stück
Anzahl | Preis ohne MwSt |
---|---|
1+ | 0.06 EUR |
10+ | 0.045 EUR |
2N5551-Y (Bipolartransistor NPN) Produktcode: 1459 |
Hersteller: Philips
Transistoren > Bipolar-Transistoren NPN
Gehäuse: TO-92
fT: 300 MHz
Uceo,V: 160
Ucbo,V: 180
Ic,A: 0,6
h21: 250
Transistoren > Bipolar-Transistoren NPN
Gehäuse: TO-92
fT: 300 MHz
Uceo,V: 160
Ucbo,V: 180
Ic,A: 0,6
h21: 250
verfügbar: 120 Stück
Anzahl | Preis ohne MwSt |
---|---|
1+ | 0.04 EUR |
10+ | 0.034 EUR |
100+ | 0.028 EUR |
1N5550 |
Hersteller: Microchip Technology
Rectifiers Std Rectifier _ B-Body
Rectifiers Std Rectifier _ B-Body
auf Bestellung 156 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 9.24 EUR |
100+ | 8.59 EUR |
1N5550 |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 200V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
Description: DIODE GEN PURP 200V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 200 V
auf Bestellung 272 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 9.29 EUR |
100+ | 8.63 EUR |
1N5550US |
Hersteller: Microchip Technology
Rectifiers Std Rectifier _ B-Body Sq. Melf
Rectifiers Std Rectifier _ B-Body Sq. Melf
auf Bestellung 105 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 11.33 EUR |
100+ | 10.54 EUR |
500+ | 10.52 EUR |
1N5551 |
Hersteller: Microchip Technology
Rectifiers Std Rectifier _ B-Body
Rectifiers Std Rectifier _ B-Body
auf Bestellung 193 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 9.24 EUR |
100+ | 8.59 EUR |
1N5551US |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 400V 3A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
Description: DIODE GEN PURP 400V 3A D-5B
Packaging: Bulk
Package / Case: SQ-MELF, E
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: D-5B
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 400 V
auf Bestellung 190 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 11.53 EUR |
100+ | 10.71 EUR |
1N5551US |
Hersteller: Microchip Technology
Rectifiers Std Rectifier _ B-Body Sq. Melf
Rectifiers Std Rectifier _ B-Body Sq. Melf
auf Bestellung 10 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 11.46 EUR |
100+ | 10.65 EUR |
1N5552 |
Hersteller: Microchip Technology
Rectifier Diode Switching 600V 5A 2000ns 2-Pin Case E Bag
Rectifier Diode Switching 600V 5A 2000ns 2-Pin Case E Bag
auf Bestellung 76 Stücke:
Lieferzeit 14-21 Tag (e)1N5552 |
Hersteller: Microchip Technology
Rectifiers Std Rectifier _ B-Body
Rectifiers Std Rectifier _ B-Body
auf Bestellung 11664 Stücke:
Lieferzeit 178-182 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 8.92 EUR |
100+ | 8.29 EUR |
1N5552US |
Hersteller: Microchip Technology
Rectifiers Std Rectifier _ B-Body Sq. Melf
Rectifiers Std Rectifier _ B-Body Sq. Melf
auf Bestellung 241 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 11.46 EUR |
100+ | 10.65 EUR |
1N5552US/TR |
Hersteller: Microchip Technology
Rectifiers Std Rectifier _ B-Body Sq. Melf
Rectifiers Std Rectifier _ B-Body Sq. Melf
auf Bestellung 170 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 11.7 EUR |
100+ | 10.88 EUR |
1N5553 |
Hersteller: Microchip Technology
Rectifiers Std Rectifier _ B-Body
Rectifiers Std Rectifier _ B-Body
auf Bestellung 408 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 11.09 EUR |
10+ | 11.04 EUR |
25+ | 10.96 EUR |
100+ | 10.54 EUR |
1N5553 |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 800V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Description: DIODE GEN PURP 800V 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
auf Bestellung 328 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 11.44 EUR |
100+ | 10.63 EUR |
1N5553US |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 800V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
Description: DIODE GEN PURP 800V 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 800 V
auf Bestellung 47 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 17.2 EUR |
1N5554 |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1KV 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Description: DIODE GEN PURP 1KV 3A AXIAL
Packaging: Bulk
Package / Case: B, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, Axial
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
auf Bestellung 333 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 14.03 EUR |
100+ | 13.02 EUR |
1N5554 |
Hersteller: Microchip Technology
Rectifiers Std Rectifier _ B-Body
Rectifiers Std Rectifier _ B-Body
auf Bestellung 264 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 13.92 EUR |
100+ | 12.94 EUR |
1N5554US |
Hersteller: Microchip Technology
Rectifiers Std Rectifier _ B-Body Sq. Melf
Rectifiers Std Rectifier _ B-Body Sq. Melf
auf Bestellung 199 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 12.94 EUR |
25+ | 12.78 EUR |
100+ | 12.46 EUR |
1N5554US |
Hersteller: Microchip Technology
Description: DIODE GEN PURP 1KV 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
Description: DIODE GEN PURP 1KV 3A B SQ-MELF
Packaging: Bulk
Package / Case: SQ-MELF, B
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: B, SQ-MELF
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 9 A
Current - Reverse Leakage @ Vr: 1 µA @ 1000 V
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 13.5 EUR |
100+ | 12.54 EUR |
1N5554US/TR |
Hersteller: Microchip Technology
Surface Mount Standard Recovery Glass Rectifiers
Surface Mount Standard Recovery Glass Rectifiers
auf Bestellung 29 Stücke:
Lieferzeit 14-21 Tag (e)1N5555 |
Hersteller: Microchip Technology
Description: TVS DIODE 30.5VWM 47.5VC DO13
Packaging: Bulk
Package / Case: DO-13
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 32A
Voltage - Reverse Standoff (Typ): 30.5V
Supplier Device Package: DO-13
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33V
Voltage - Clamping (Max) @ Ipp: 47.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 30.5VWM 47.5VC DO13
Packaging: Bulk
Package / Case: DO-13
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 32A
Voltage - Reverse Standoff (Typ): 30.5V
Supplier Device Package: DO-13
Unidirectional Channels: 1
Voltage - Breakdown (Min): 33V
Voltage - Clamping (Max) @ Ipp: 47.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 52 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 25.1 EUR |
1N5555 |
Hersteller: Microchip Technology
ESD Suppressors / TVS Diodes Uni-Directional TVS _ DO-13
ESD Suppressors / TVS Diodes Uni-Directional TVS _ DO-13
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 24.92 EUR |
100+ | 23.16 EUR |
1N5556 |
Hersteller: Microchip Technology
Description: TVS DIODE 40.3VWM 63.5VC DO13
Packaging: Bulk
Package / Case: DO-13
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 24A
Voltage - Reverse Standoff (Typ): 40.3V
Supplier Device Package: DO-13
Unidirectional Channels: 1
Voltage - Breakdown (Min): 43.7V
Voltage - Clamping (Max) @ Ipp: 63.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 40.3VWM 63.5VC DO13
Packaging: Bulk
Package / Case: DO-13
Mounting Type: Through Hole
Type: Zener
Operating Temperature: -65°C ~ 175°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 24A
Voltage - Reverse Standoff (Typ): 40.3V
Supplier Device Package: DO-13
Unidirectional Channels: 1
Voltage - Breakdown (Min): 43.7V
Voltage - Clamping (Max) @ Ipp: 63.5V
Power - Peak Pulse: 1500W (1.5kW)
Power Line Protection: No
Part Status: Active
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 37.21 EUR |
1N5556 |
Hersteller: Microchip Technology
ESD Suppressors / TVS Diodes Uni-Directional TVS _ DO-13
ESD Suppressors / TVS Diodes Uni-Directional TVS _ DO-13
auf Bestellung 438 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 36.96 EUR |
100+ | 34.32 EUR |
1N5558 |
Hersteller: Microchip Technology
ESD Suppressors / TVS Diodes Uni-Directional TVS _ DO-13
ESD Suppressors / TVS Diodes Uni-Directional TVS _ DO-13
auf Bestellung 16 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 48.03 EUR |
100+ | 44.6 EUR |
2N5550 |
Hersteller: LUGUANG ELECTRONIC
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 140V; 0.6A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 20...250
Mounting: THT
Frequency: 100...300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 140V; 0.6A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 20...250
Mounting: THT
Frequency: 100...300MHz
auf Bestellung 2665 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1430+ | 0.05 EUR |
2595+ | 0.028 EUR |
2665+ | 0.027 EUR |
2N5550 |
Hersteller: CDIL
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 140V; 0.6A; 625mW/1.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 0.6A
Power dissipation: 0.625/1.5W
Case: TO92
Current gain: 20...250
Mounting: THT
Frequency: 100...300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 140V; 0.6A; 625mW/1.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 0.6A
Power dissipation: 0.625/1.5W
Case: TO92
Current gain: 20...250
Mounting: THT
Frequency: 100...300MHz
auf Bestellung 4959 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1900+ | 0.038 EUR |
2325+ | 0.031 EUR |
2650+ | 0.027 EUR |
2875+ | 0.025 EUR |
2925+ | 0.024 EUR |
3050+ | 0.023 EUR |
2N5550 |
Hersteller: CDIL
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 140V; 0.6A; 625mW/1.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 0.6A
Power dissipation: 0.625/1.5W
Case: TO92
Current gain: 20...250
Mounting: THT
Frequency: 100...300MHz
Anzahl je Verpackung: 25 Stücke
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 140V; 0.6A; 625mW/1.5W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 0.6A
Power dissipation: 0.625/1.5W
Case: TO92
Current gain: 20...250
Mounting: THT
Frequency: 100...300MHz
Anzahl je Verpackung: 25 Stücke
auf Bestellung 4959 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1900+ | 0.038 EUR |
2325+ | 0.031 EUR |
2650+ | 0.027 EUR |
2875+ | 0.025 EUR |
2925+ | 0.024 EUR |
3050+ | 0.023 EUR |
2N5550 |
Hersteller: LUGUANG ELECTRONIC
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 140V; 0.6A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 20...250
Mounting: THT
Frequency: 100...300MHz
Anzahl je Verpackung: 5 Stücke
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 140V; 0.6A; 0.625W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 140V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Current gain: 20...250
Mounting: THT
Frequency: 100...300MHz
Anzahl je Verpackung: 5 Stücke
auf Bestellung 2665 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1430+ | 0.05 EUR |
2595+ | 0.028 EUR |
2665+ | 0.027 EUR |
3000+ | 0.024 EUR |
2N5550 |
Hersteller: LGE
Trans GP BJT NPN 140V 0.6A 625mW 3-Pin TO-92 Fan-Fold 2N5550G 2N5550RLRPG 2N5550TA 2N5550TAR 2N5550TFR 2N5550-LGE 2N5550 T2N5550
Anzahl je Verpackung: 500 Stücke
Trans GP BJT NPN 140V 0.6A 625mW 3-Pin TO-92 Fan-Fold 2N5550G 2N5550RLRPG 2N5550TA 2N5550TAR 2N5550TFR 2N5550-LGE 2N5550 T2N5550
Anzahl je Verpackung: 500 Stücke
auf Bestellung 1000 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
500+ | 0.06 EUR |
2N5550 PBFREE |
Hersteller: Central Semiconductor
Bipolar Transistors - BJT NPN Gen Pur SS
Bipolar Transistors - BJT NPN Gen Pur SS
auf Bestellung 9713 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 0.78 EUR |
10+ | 0.68 EUR |
100+ | 0.51 EUR |
500+ | 0.4 EUR |
1000+ | 0.31 EUR |
2500+ | 0.28 EUR |
10000+ | 0.24 EUR |
2N5550/D26Z |
Hersteller: Fairchild Semiconductor
Description: TRANS NPN 140V 0.6A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
Description: TRANS NPN 140V 0.6A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11539+ | 0.049 EUR |
2N5550RLRA |
Hersteller: onsemi
Description: TRANS NPN 140V 0.6A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
Description: TRANS NPN 140V 0.6A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6662+ | 0.082 EUR |
2N5550RLRAG |
Hersteller: onsemi
Description: TRANS NPN 140V 0.6A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
Description: TRANS NPN 140V 0.6A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6662+ | 0.082 EUR |
2N5550RLRP |
Hersteller: onsemi
Description: TRANS NPN 140V 0.6A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
Description: TRANS NPN 140V 0.6A TO92
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92 (TO-226)
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
auf Bestellung 164000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6662+ | 0.082 EUR |
2N5550TA |
Hersteller: onsemi / Fairchild
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
auf Bestellung 8146 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 0.59 EUR |
10+ | 0.4 EUR |
100+ | 0.16 EUR |
1000+ | 0.11 EUR |
2000+ | 0.063 EUR |
2N5550TA |
Hersteller: onsemi
Description: TRANS NPN 140V 0.6A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
Description: TRANS NPN 140V 0.6A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
auf Bestellung 3474 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
30+ | 0.6 EUR |
44+ | 0.4 EUR |
100+ | 0.2 EUR |
500+ | 0.16 EUR |
1000+ | 0.11 EUR |
2N5550TA |
Hersteller: onsemi
Description: TRANS NPN 140V 0.6A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
Description: TRANS NPN 140V 0.6A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2000+ | 0.069 EUR |
6000+ | 0.064 EUR |
10000+ | 0.055 EUR |
2N5550TA |
Hersteller: Fairchild Semiconductor
Description: TRANS NPN 140V 0.6A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
Description: TRANS NPN 140V 0.6A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
auf Bestellung 33620 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7755+ | 0.066 EUR |
2N5550TAR |
Hersteller: onsemi / Fairchild
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
auf Bestellung 7235 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 0.57 EUR |
10+ | 0.4 EUR |
100+ | 0.14 EUR |
1000+ | 0.12 EUR |
2000+ | 0.077 EUR |
2N5550TAR |
Hersteller: onsemi
Description: TRANS NPN 140V 0.6A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
Description: TRANS NPN 140V 0.6A TO92-3
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
auf Bestellung 134000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2000+ | 0.073 EUR |
6000+ | 0.07 EUR |
10000+ | 0.067 EUR |
2N5550TAR |
Hersteller: onsemi
Description: TRANS NPN 140V 0.6A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
Description: TRANS NPN 140V 0.6A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
auf Bestellung 105644 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
31+ | 0.58 EUR |
44+ | 0.4 EUR |
100+ | 0.2 EUR |
500+ | 0.17 EUR |
1000+ | 0.12 EUR |
2N5550TF |
Hersteller: Fairchild Semiconductor
Description: TRANS NPN 140V 0.6A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
Description: TRANS NPN 140V 0.6A TO92-3
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
auf Bestellung 29681 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11539+ | 0.049 EUR |
2N5550TFR |
Hersteller: onsemi
Description: TRANS NPN 140V 0.6A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
Description: TRANS NPN 140V 0.6A TO92-3
Packaging: Tape & Reel (TR)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
auf Bestellung 120000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2000+ | 0.069 EUR |
6000+ | 0.064 EUR |
10000+ | 0.055 EUR |
2N5550TFR |
Hersteller: Fairchild Semiconductor
Description: SMALL SIGNAL BIPOLAR TRANSISTOR,
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
Description: SMALL SIGNAL BIPOLAR TRANSISTOR,
Packaging: Bulk
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
auf Bestellung 22874 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7755+ | 0.066 EUR |
2N5550TFR |
Hersteller: onsemi / Fairchild
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
Bipolar Transistors - BJT NPN Si Transistor Epitaxial
auf Bestellung 9366 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 0.59 EUR |
10+ | 0.4 EUR |
100+ | 0.16 EUR |
1000+ | 0.11 EUR |
2000+ | 0.063 EUR |
2N5550TFR |
Hersteller: onsemi
Description: TRANS NPN 140V 0.6A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
Description: TRANS NPN 140V 0.6A TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 140 V
Power - Max: 625 mW
auf Bestellung 121057 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
30+ | 0.6 EUR |
44+ | 0.4 EUR |
100+ | 0.2 EUR |
500+ | 0.16 EUR |
1000+ | 0.11 EUR |
2N5551 |
Hersteller: DIOTEC SEMICONDUCTOR
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 625mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 625mW; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625W
Case: TO92
Mounting: THT
Kind of package: Ammo Pack
Frequency: 100MHz
auf Bestellung 25900 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1425+ | 0.051 EUR |
2050+ | 0.035 EUR |
2600+ | 0.028 EUR |
3275+ | 0.022 EUR |
3450+ | 0.021 EUR |
12000+ | 0.02 EUR |
2N5551 |
Hersteller: CDIL
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625/15W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625/15W
Case: TO92
Current gain: 30...250
Mounting: THT
Frequency: 100...300MHz
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625/15W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625/15W
Case: TO92
Current gain: 30...250
Mounting: THT
Frequency: 100...300MHz
auf Bestellung 1975 Stücke:
Lieferzeit 14-21 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1900+ | 0.038 EUR |
1975+ | 0.036 EUR |
2N5551 |
auf Bestellung 5000 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1000+ | 0.047 EUR |
2N5551 |
auf Bestellung 1030 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1000+ | 0.047 EUR |
2N5551 |
Hersteller: CDIL
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625/15W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625/15W
Case: TO92
Current gain: 30...250
Mounting: THT
Frequency: 100...300MHz
Anzahl je Verpackung: 25 Stücke
Category: NPN THT transistors
Description: Transistor: NPN; bipolar; 160V; 0.6A; 0.625/15W; TO92
Type of transistor: NPN
Polarisation: bipolar
Collector-emitter voltage: 160V
Collector current: 0.6A
Power dissipation: 0.625/15W
Case: TO92
Current gain: 30...250
Mounting: THT
Frequency: 100...300MHz
Anzahl je Verpackung: 25 Stücke
auf Bestellung 1975 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1900+ | 0.038 EUR |
1975+ | 0.036 EUR |
5000+ | 0.024 EUR |
2N5551 |
Hersteller: JSMicro Semiconductor
Transistor NPN; 300; 350mW; 160V; 600mA; 300MHz; -55°C ~ 150°C; Equivalent: 2N5551,412; 2N5551-BP; 2N5551BU; 2N5551G; 2N5551 JSMICRO T2N5551 JSM
Anzahl je Verpackung: 1000 Stücke
Transistor NPN; 300; 350mW; 160V; 600mA; 300MHz; -55°C ~ 150°C; Equivalent: 2N5551,412; 2N5551-BP; 2N5551BU; 2N5551G; 2N5551 JSMICRO T2N5551 JSM
Anzahl je Verpackung: 1000 Stücke
auf Bestellung 2000 Stücke:
Lieferzeit 7-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1000+ | 0.061 EUR |
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