Suchergebnisse für "6n65" : > 60

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IGD06N65T6ARMA1 IGD06N65T6ARMA1 Infineon Technologies Infineon_IGD06N65T6_DataSheet_v02_03_EN-3011101.pdf IGBT Transistors HOME APPLIANCES 14
auf Bestellung 2832 Stücke:
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2+2.59 EUR
10+ 2.16 EUR
100+ 1.72 EUR
250+ 1.59 EUR
500+ 1.44 EUR
1000+ 1.23 EUR
3000+ 1.17 EUR
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IKD06N65ET6ARMA1 IKD06N65ET6ARMA1 Infineon Technologies Infineon_IKD06N65ET6_DataSheet_v02_02_EN-3361965.pdf IGBT Transistors HOME APPLIANCES 14
auf Bestellung 5609 Stücke:
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2+2.5 EUR
10+ 1.8 EUR
100+ 1.61 EUR
250+ 1.55 EUR
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3000+ 1.37 EUR
Mindestbestellmenge: 2
IXFH26N65X2 Littelfuse Inc. media?resourcetype=datasheets&itemid=f86fd484-1170-4f6c-9877-b6f365994bed&filename=littelfuse_discrete_mosfets_ixf_26n65x2_datasheet.pdf Description: IXFH26N65X2
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-247 (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V
auf Bestellung 1158 Stücke:
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1+18.48 EUR
30+ 14.95 EUR
120+ 14.07 EUR
510+ 12.75 EUR
1020+ 11.7 EUR
IXFH26N65X2 IXFH26N65X2 IXYS media-3323918.pdf MOSFET MOSFET DISCRETE
auf Bestellung 52 Stücke:
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1+18.94 EUR
10+ 17.02 EUR
30+ 16.77 EUR
60+ 16.39 EUR
IXFH46N65X2 IXFH46N65X2 IXYS IXFH46N65X2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 660W; TO247-3; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 660W
Case: TO247-3
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 180ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFH46N65X2 IXFH46N65X2 Littelfuse Inc. littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfh46n65x2_datasheet.pdf.pdf Description: MOSFET N-CH 650V 46A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 76mOhm @ 23A, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V
auf Bestellung 310 Stücke:
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2+11.86 EUR
30+ 9.46 EUR
120+ 8.77 EUR
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IXFH46N65X2 IXFH46N65X2 IXYS media-3322517.pdf MOSFET MOSFET 650V/46A Ultra Junction X2
auf Bestellung 255 Stücke:
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1+16.97 EUR
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30+ 13.2 EUR
120+ 12.13 EUR
270+ 11.4 EUR
IXFH46N65X3 IXFH46N65X3 IXYS media-3320569.pdf MOSFET DISCRETE MOSFET 46A 650V X3 TO
auf Bestellung 69 Stücke:
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1+15.21 EUR
10+ 13.02 EUR
30+ 11.83 EUR
IXFH46N65X3 IXFH46N65X3 Littelfuse Inc. media?resourcetype=datasheets&itemid=10fd64af-6607-473b-bf9b-80b18b016da4&filename=littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh46n65x3-datasheet Description: MOSFET 46A 650V X3 TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 73mOhm @ 23A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 2.5mA
Supplier Device Package: TO-247 (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V
auf Bestellung 352 Stücke:
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2+15.1 EUR
10+ 12.94 EUR
300+ 10.14 EUR
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IXFP26N65X2 IXFP26N65X2 IXYS media?resourcetype=datasheets&itemid=f86fd484-1170-4f6c-9877-b6f365994bed&filename=littelfuse_discrete_mosfets_ixf_26n65x2_datasheet.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 26A; Idm: 36A; 460W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 36A
Power dissipation: 460W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
7+11 EUR
10+ 7.19 EUR
Mindestbestellmenge: 7
IXFP26N65X2 IXFP26N65X2 IXYS media-3323918.pdf MOSFET MOSFET DISCRETE
auf Bestellung 100 Stücke:
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1+15.63 EUR
10+ 13.41 EUR
50+ 12.18 EUR
KSM6----N6--5-- KSM6----N6--5-- Essentra Components Plastic_Knobs.pdf Description: SELF-ASSEMBLY PUSH PULL KNOB 1.0
Packaging: Bulk
Color: Black
Material: Acetal
Shaft Size: M6
Diameter: 1.000" (25.40mm)
Style: Cylindrical
Type: Knurled, Straight
Height: 0.380" (9.65mm)
Indicator: No Indicator
Part Status: Active
auf Bestellung 1699 Stücke:
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9+2.04 EUR
11+ 1.7 EUR
12+ 1.53 EUR
25+ 1.36 EUR
50+ 1.22 EUR
100+ 1.2 EUR
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SIHD6N65E-GE3 SIHD6N65E-GE3 Vishay Siliconix sihd6n65e.pdf Description: MOSFET N-CH 650V 7A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V
auf Bestellung 2867 Stücke:
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10+1.78 EUR
75+ 1.42 EUR
150+ 1.17 EUR
525+ 1.06 EUR
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SIHD6N65E-GE3 SIHD6N65E-GE3 Vishay / Siliconix sihd6n65e.pdf MOSFET 650V Vds 30V Vgs DPAK (TO-252)
auf Bestellung 3772 Stücke:
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2+2.52 EUR
10+ 2.09 EUR
100+ 1.67 EUR
250+ 1.55 EUR
500+ 1.4 EUR
1000+ 1.22 EUR
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SIHF6N65E-GE3 SIHF6N65E-GE3 Vishay / Siliconix sihf6n65e.pdf MOSFET 650V Vds 30V Vgs TO-220 FULLPAK
auf Bestellung 968 Stücke:
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1+3.85 EUR
10+ 3.2 EUR
100+ 2.55 EUR
250+ 2.36 EUR
500+ 2.15 EUR
1000+ 1.81 EUR
2000+ 1.78 EUR
SIHJ6N65E-T1-GE3 SIHJ6N65E-T1-GE3 Vishay Semiconductors sihj6n65e.pdf MOSFET 650V Vds 30V Vgs PowerPAK SO-8L
auf Bestellung 5912 Stücke:
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1+3.36 EUR
10+ 2.8 EUR
100+ 2.22 EUR
250+ 2.04 EUR
500+ 1.87 EUR
1000+ 1.59 EUR
3000+ 1.55 EUR
SIHP6N65E-GE3 SIHP6N65E-GE3 Vishay / Siliconix sihp6n65e.pdf MOSFET 650V Vds 30V Vgs TO-220AB
auf Bestellung 1000 Stücke:
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1+3.41 EUR
10+ 2.85 EUR
100+ 2.25 EUR
250+ 2.09 EUR
500+ 1.9 EUR
1000+ 1.57 EUR
2000+ 1.54 EUR
SIHU6N65E-GE3 SIHU6N65E-GE3 Vishay / Siliconix sihu6n65e.pdf MOSFET 650V Vds 30V Vgs IPAK (TO-251)
auf Bestellung 2701 Stücke:
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2+2.69 EUR
10+ 2.24 EUR
75+ 1.76 EUR
300+ 1.64 EUR
525+ 1.49 EUR
1050+ 1.27 EUR
2550+ 1.26 EUR
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STB6N65K3 STB6N65K3 STMicroelectronics MOSFET PTD HIGH VOLTAGE
auf Bestellung 1995 Stücke:
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2+2.31 EUR
10+ 1.9 EUR
100+ 1.48 EUR
500+ 1.25 EUR
1000+ 1.02 EUR
2000+ 0.96 EUR
5000+ 0.91 EUR
Mindestbestellmenge: 2
STD16N65M2 STD16N65M2 STMicroelectronics en.DM00140850.pdf Description: MOSFET N-CH 650V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
2500+1.56 EUR
Mindestbestellmenge: 2500
STD16N65M2 STD16N65M2 STMicroelectronics std16n65m2-1850321.pdf MOSFET N-channel 650 V, 0.32 Ohm typ 11 A MDmesh M2 Power MOSFET in DPAK package
auf Bestellung 5531 Stücke:
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1+3.57 EUR
10+ 2.96 EUR
100+ 2.36 EUR
500+ 1.99 EUR
1000+ 1.65 EUR
2500+ 1.57 EUR
5000+ 1.52 EUR
STD16N65M2 STD16N65M2 STMicroelectronics en.DM00140850.pdf Description: MOSFET N-CH 650V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.47 EUR
10+ 2.87 EUR
100+ 2.28 EUR
500+ 1.93 EUR
1000+ 1.64 EUR
Mindestbestellmenge: 6
STD16N65M5 STD16N65M5 STMicroelectronics std16n65m5.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 12A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 12A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.279Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2487 Stücke:
Lieferzeit 14-21 Tag (e)
21+3.55 EUR
23+ 3.12 EUR
27+ 2.67 EUR
29+ 2.53 EUR
Mindestbestellmenge: 21
STD16N65M5 STD16N65M5 STMicroelectronics std16n65m5.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 12A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 12A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.279Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2487 Stücke:
Lieferzeit 7-14 Tag (e)
21+3.55 EUR
23+ 3.12 EUR
27+ 2.67 EUR
29+ 2.53 EUR
Mindestbestellmenge: 21
STD16N65M5 STD16N65M5 STMicroelectronics en.CD00288956.pdf Description: MOSFET N-CH 650V 12A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V
auf Bestellung 7981 Stücke:
Lieferzeit 10-14 Tag (e)
4+4.73 EUR
10+ 3.98 EUR
100+ 3.22 EUR
500+ 2.86 EUR
1000+ 2.45 EUR
Mindestbestellmenge: 4
STD16N65M5 STD16N65M5 STMicroelectronics en.CD00288956.pdf Description: MOSFET N-CH 650V 12A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
2500+2.31 EUR
5000+ 2.21 EUR
Mindestbestellmenge: 2500
STD16N65M5 STD16N65M5 STMicroelectronics std16n65m5-1850551.pdf MOSFET N-Ch 650 Volt 12 Amp
auf Bestellung 470 Stücke:
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1+4.77 EUR
10+ 4 EUR
25+ 3.77 EUR
100+ 3.22 EUR
250+ 3.04 EUR
500+ 2.87 EUR
1000+ 2.46 EUR
STD16N65M5 STD16N65M5 STMicroelectronics std16n65m5.pdf Trans MOSFET N-CH Si 650V 12A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 2503 Stücke:
Lieferzeit 14-21 Tag (e)
STD6N65M2 STD6N65M2 STMicroelectronics en.DM00127825.pdf Description: MOSFET N-CH 650V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 2A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 226 pF @ 100 V
auf Bestellung 2488 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.22 EUR
10+ 1.8 EUR
100+ 1.4 EUR
500+ 1.19 EUR
1000+ 0.97 EUR
Mindestbestellmenge: 8
STD6N65M2 STD6N65M2 STMicroelectronics stb6n65m2-1850048.pdf MOSFET N-channel 650 V, 1.2 Ohm typ 4 A MDmesh M2 Power MOSFET in DPAK package
auf Bestellung 2227 Stücke:
Lieferzeit 122-126 Tag (e)
2+2.22 EUR
10+ 1.81 EUR
100+ 1.41 EUR
500+ 1.2 EUR
1000+ 0.98 EUR
2500+ 0.92 EUR
5000+ 0.87 EUR
Mindestbestellmenge: 2
STF16N65M2 STF16N65M2 STMicroelectronics en.DM00140952.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)
28+2.65 EUR
44+ 1.64 EUR
46+ 1.56 EUR
Mindestbestellmenge: 28
STF16N65M2 STF16N65M2 STMicroelectronics en.DM00140952.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 88 Stücke:
Lieferzeit 7-14 Tag (e)
28+2.65 EUR
44+ 1.64 EUR
46+ 1.56 EUR
500+ 1.53 EUR
1000+ 1.5 EUR
Mindestbestellmenge: 28
STF16N65M2 STF16N65M2 STMicroelectronics stf16n65m2-1850541.pdf MOSFET N-channel 650 V, 0.32 Ohm typ 11 A MDmesh M2 Power MOSFET
auf Bestellung 997 Stücke:
Lieferzeit 10-14 Tag (e)
1+3.27 EUR
10+ 2.24 EUR
100+ 1.99 EUR
500+ 1.76 EUR
1000+ 1.67 EUR
2000+ 1.6 EUR
5000+ 1.55 EUR
STF16N65M2 STF16N65M2 STMicroelectronics en.DM00140952.pdf Description: MOSFET N-CH 650V 11A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V
auf Bestellung 998 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.5 EUR
50+ 2.83 EUR
100+ 2.32 EUR
500+ 1.97 EUR
Mindestbestellmenge: 6
STF16N65M5 STF16N65M5 STMicroelectronics STF16N65M5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 7.3A; 90W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.3A
Power dissipation: 90W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.279Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
19+3.76 EUR
Mindestbestellmenge: 19
STF16N65M5 STF16N65M5 STMicroelectronics STF16N65M5.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 7.3A; 90W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.3A
Power dissipation: 90W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.279Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 19 Stücke:
Lieferzeit 7-14 Tag (e)
19+3.76 EUR
Mindestbestellmenge: 19
STF16N65M5 STF16N65M5 STMicroelectronics stf16n65m5-1850542.pdf MOSFET N-CH 65V 12A MDMESH
auf Bestellung 11971 Stücke:
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STF16N65M5 STF16N65M5 STMicroelectronics en.CD00218186.pdf Description: MOSFET N-CH 650V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V
auf Bestellung 1631 Stücke:
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4+5.09 EUR
50+ 4.03 EUR
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500+ 3.07 EUR
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STF26N65DM2 STMicroelectronics stf26n65dm2-1850822.pdf MOSFET N-channel 650 V, 0.156 Ohm typ 20 A MDmesh DM2 Power MOSFET
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1+6 EUR
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25+ 4.24 EUR
100+ 3.8 EUR
250+ 3.64 EUR
500+ 3.47 EUR
1000+ 3.1 EUR
STF6N65K3 STF6N65K3 STMicroelectronics stf6n65k3-1850651.pdf MOSFET N-Ch 650V 1.1 Ohm 5.4A SuperMESH3
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1+3.84 EUR
10+ 2.04 EUR
100+ 1.8 EUR
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STF6N65K3 STF6N65K3 STMicroelectronics cd0029732.pdf Trans MOSFET N-CH 650V 5.4A 3-Pin(3+Tab) TO-220FP Tube
auf Bestellung 1425 Stücke:
Lieferzeit 14-21 Tag (e)
STF6N65M2 STF6N65M2 STMicroelectronics stf6n65m2-1379793.pdf MOSFET N-channel 650 V, 1.2 Ohm typ 4 A MDmesh M2 Power MOSFET
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2+2.22 EUR
10+ 1.83 EUR
100+ 1.47 EUR
500+ 1.4 EUR
1000+ 1.14 EUR
2000+ 1.03 EUR
5000+ 1 EUR
Mindestbestellmenge: 2
STL16N65M2 STL16N65M2 STMicroelectronics stl16n65m2-1851064.pdf MOSFET N-channel 650 V, 0.325 Ohm typ 7.5 A MDmesh M2 Power MOSFET
auf Bestellung 1500 Stücke:
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1+3.73 EUR
10+ 3.1 EUR
100+ 2.46 EUR
250+ 2.43 EUR
500+ 2.09 EUR
1000+ 1.76 EUR
3000+ 1.67 EUR
STL16N65M2 STL16N65M2 STMicroelectronics en.DM00141948.pdf Description: MOSFET N-CH 650V 7.5A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 395mOhm @ 3.5A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V
auf Bestellung 2530 Stücke:
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5+3.7 EUR
10+ 3.08 EUR
100+ 2.45 EUR
500+ 2.07 EUR
1000+ 1.76 EUR
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STP16N65M2 STP16N65M2 STMicroelectronics stp16n65m2-1851504.pdf MOSFET N-channel 650 V, 0.32 Ohm typ 11 A MDmesh M2 Power MOSFET in TO-220 package
auf Bestellung 980 Stücke:
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1+3.52 EUR
10+ 1.9 EUR
100+ 1.81 EUR
250+ 1.78 EUR
500+ 1.7 EUR
1000+ 1.65 EUR
2000+ 1.64 EUR
STP16N65M5 ST en.CD00218186.pdf Transistor N-Channel MOSFET; 650V; 25V; 279mOhm; 12A; 25W; -55°C ~ 150°C; STP16N65M5 TSTP16N65M5
Anzahl je Verpackung: 5 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)
5+7.14 EUR
Mindestbestellmenge: 5
STP16N65M5 STP16N65M5 STMicroelectronics stf16n65m5-1850542.pdf MOSFET N-Ch 650 Volt 12 Amp
auf Bestellung 898 Stücke:
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1+5.1 EUR
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100+ 3.48 EUR
500+ 3.1 EUR
1000+ 2.64 EUR
2000+ 2.46 EUR
STP16N65M5 STP16N65M5 STMicroelectronics en.CD00218186.pdf Description: MOSFET N-CH 650V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V
auf Bestellung 727 Stücke:
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4+5.07 EUR
50+ 4.02 EUR
100+ 3.45 EUR
500+ 3.06 EUR
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STP16N65M5 STP16N65M5 STMicroelectronics 1684623289557307cd002.pdf Trans MOSFET N-CH Si 650V 12A 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
STP26N65DM2 STP26N65DM2 STMicroelectronics stp26n65dm2.pdf Description: MOSFET N-CH 650V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 100 V
auf Bestellung 858 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.4 EUR
10+ 4.54 EUR
100+ 3.67 EUR
500+ 3.27 EUR
Mindestbestellmenge: 4
STU16N65M2 STU16N65M2 STMicroelectronics stp16n65m2-1851504.pdf MOSFET N-channel 650 V, 0.32 Ohm typ 11 A MDmesh M2 Power MOSFET in IPAK package
auf Bestellung 1988 Stücke:
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1+3.7 EUR
10+ 2.97 EUR
100+ 2.46 EUR
250+ 2.25 EUR
500+ 2.06 EUR
1000+ 1.67 EUR
3000+ 1.62 EUR
STU16N65M2 STU16N65M2 STMicroelectronics en.DM00140964.pdf Description: MOSFET N-CH 650V 11A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V
auf Bestellung 10491 Stücke:
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5+3.68 EUR
75+ 2.95 EUR
150+ 2.43 EUR
525+ 2.06 EUR
1050+ 1.74 EUR
2025+ 1.66 EUR
5025+ 1.59 EUR
10050+ 1.54 EUR
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STU6N65M2 STU6N65M2 STMicroelectronics stf6n65m2-1379793.pdf MOSFET N-channel 650 V, 1.2 Ohm typ 4 A MDmesh M2 Power MOSFET in IPAK package
auf Bestellung 2850 Stücke:
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2+1.78 EUR
10+ 1.1 EUR
100+ 0.94 EUR
500+ 0.87 EUR
1000+ 0.75 EUR
3000+ 0.7 EUR
Mindestbestellmenge: 2
STW56N65DM2 STW56N65DM2 STMicroelectronics stw56n65dm2-1852254.pdf MOSFET N-channel 650 V, 0.058 Ohm typ 48 A MDmesh DM2 Power MOSFET
auf Bestellung 267 Stücke:
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1+18.18 EUR
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100+ 12.99 EUR
250+ 11.46 EUR
600+ 10.3 EUR
STW56N65M2 STW56N65M2 STMicroelectronics stw56n65m2-1852163.pdf MOSFET N-channel 650 V, 0.049 Ohm typ 49 A MDmesh M2 Power MOSFET
auf Bestellung 204 Stücke:
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1+14.29 EUR
10+ 12.71 EUR
25+ 11.11 EUR
100+ 10.19 EUR
250+ 8.99 EUR
600+ 8.08 EUR
1200+ 7.73 EUR
STW56N65M2 STW56N65M2 STMicroelectronics en.DM00151747.pdf Description: MOSFET N-CH 650V 49A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 24.5A, 10V
Power Dissipation (Max): 358W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 100 V
auf Bestellung 114 Stücke:
Lieferzeit 10-14 Tag (e)
2+14.19 EUR
30+ 11.32 EUR
Mindestbestellmenge: 2
TRS16N65FB,S1Q TRS16N65FB,S1Q Toshiba Semiconductor and Storage datasheet_en_20200703.pdf?did=69235 Description: DIODE ARR SIC SCHOTT 650V TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 138 Stücke:
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2+9.42 EUR
30+ 7.46 EUR
120+ 6.39 EUR
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TRS16N65FB,S1Q TRS16N65FB,S1Q Toshiba TRS16N65FB_datasheet_en_20200703-1891865.pdf Schottky Diodes & Rectifiers SCHOTTKY BARRIER DIODE TO-247 V=650 IF=16A
auf Bestellung 192 Stücke:
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1+9.47 EUR
10+ 7.52 EUR
120+ 6.42 EUR
270+ 6.16 EUR
510+ 5.72 EUR
1020+ 4.73 EUR
WMJ26N65C2 WMJ26N65C2 WAYON WMx26N65C2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 20A; 147W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 147W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
12+6.02 EUR
15+ 4.8 EUR
27+ 2.69 EUR
29+ 2.55 EUR
Mindestbestellmenge: 12
WMJ26N65C2 WMJ26N65C2 WAYON WMx26N65C2.pdf Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 20A; 147W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 147W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 34 Stücke:
Lieferzeit 7-14 Tag (e)
12+6.02 EUR
15+ 4.8 EUR
27+ 2.69 EUR
29+ 2.55 EUR
Mindestbestellmenge: 12
IGD06N65T6ARMA1 Infineon_IGD06N65T6_DataSheet_v02_03_EN-3011101.pdf
IGD06N65T6ARMA1
Hersteller: Infineon Technologies
IGBT Transistors HOME APPLIANCES 14
auf Bestellung 2832 Stücke:
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Anzahl Preis ohne MwSt
2+2.59 EUR
10+ 2.16 EUR
100+ 1.72 EUR
250+ 1.59 EUR
500+ 1.44 EUR
1000+ 1.23 EUR
3000+ 1.17 EUR
Mindestbestellmenge: 2
IKD06N65ET6ARMA1 Infineon_IKD06N65ET6_DataSheet_v02_02_EN-3361965.pdf
IKD06N65ET6ARMA1
Hersteller: Infineon Technologies
IGBT Transistors HOME APPLIANCES 14
auf Bestellung 5609 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.5 EUR
10+ 1.8 EUR
100+ 1.61 EUR
250+ 1.55 EUR
1000+ 1.5 EUR
3000+ 1.37 EUR
Mindestbestellmenge: 2
IXFH26N65X2 media?resourcetype=datasheets&itemid=f86fd484-1170-4f6c-9877-b6f365994bed&filename=littelfuse_discrete_mosfets_ixf_26n65x2_datasheet.pdf
Hersteller: Littelfuse Inc.
Description: IXFH26N65X2
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 500mA, 10V
Power Dissipation (Max): 460W (Tc)
Vgs(th) (Max) @ Id: 5V @ 2.5mA
Supplier Device Package: TO-247 (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2450 pF @ 25 V
auf Bestellung 1158 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+18.48 EUR
30+ 14.95 EUR
120+ 14.07 EUR
510+ 12.75 EUR
1020+ 11.7 EUR
IXFH26N65X2 media-3323918.pdf
IXFH26N65X2
Hersteller: IXYS
MOSFET MOSFET DISCRETE
auf Bestellung 52 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+18.94 EUR
10+ 17.02 EUR
30+ 16.77 EUR
60+ 16.39 EUR
IXFH46N65X2 IXFH46N65X2.pdf
IXFH46N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 46A; 660W; TO247-3; 180ns
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 46A
Power dissipation: 660W
Case: TO247-3
On-state resistance: 69mΩ
Mounting: THT
Gate charge: 98nC
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ultra junction x-class
Reverse recovery time: 180ns
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IXFH46N65X2 littelfuse_discrete_mosfets_n-channel_ultra_junction_ixfh46n65x2_datasheet.pdf.pdf
IXFH46N65X2
Hersteller: Littelfuse Inc.
Description: MOSFET N-CH 650V 46A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 76mOhm @ 23A, 10V
Power Dissipation (Max): 660W (Tc)
Vgs(th) (Max) @ Id: 5.5V @ 4mA
Supplier Device Package: TO-247 (IXTH)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4810 pF @ 25 V
auf Bestellung 310 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+11.86 EUR
30+ 9.46 EUR
120+ 8.77 EUR
Mindestbestellmenge: 2
IXFH46N65X2 media-3322517.pdf
IXFH46N65X2
Hersteller: IXYS
MOSFET MOSFET 650V/46A Ultra Junction X2
auf Bestellung 255 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+16.97 EUR
10+ 14.56 EUR
30+ 13.2 EUR
120+ 12.13 EUR
270+ 11.4 EUR
IXFH46N65X3 media-3320569.pdf
IXFH46N65X3
Hersteller: IXYS
MOSFET DISCRETE MOSFET 46A 650V X3 TO
auf Bestellung 69 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+15.21 EUR
10+ 13.02 EUR
30+ 11.83 EUR
IXFH46N65X3 media?resourcetype=datasheets&itemid=10fd64af-6607-473b-bf9b-80b18b016da4&filename=littelfuse-discrete-mosfets-n-channel-ultra-junction-ixfh46n65x3-datasheet
IXFH46N65X3
Hersteller: Littelfuse Inc.
Description: MOSFET 46A 650V X3 TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 73mOhm @ 23A, 10V
Power Dissipation (Max): 520W (Tc)
Vgs(th) (Max) @ Id: 5.2V @ 2.5mA
Supplier Device Package: TO-247 (IXFH)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2730 pF @ 25 V
auf Bestellung 352 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+15.1 EUR
10+ 12.94 EUR
300+ 10.14 EUR
Mindestbestellmenge: 2
IXFP26N65X2 media?resourcetype=datasheets&itemid=f86fd484-1170-4f6c-9877-b6f365994bed&filename=littelfuse_discrete_mosfets_ixf_26n65x2_datasheet.pdf
IXFP26N65X2
Hersteller: IXYS
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 650V; 26A; Idm: 36A; 460W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 26A
Pulsed drain current: 36A
Power dissipation: 460W
Case: TO220AB
Gate-source voltage: ±30V
On-state resistance: 0.13Ω
Mounting: THT
Gate charge: 45nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 50 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
7+11 EUR
10+ 7.19 EUR
Mindestbestellmenge: 7
IXFP26N65X2 media-3323918.pdf
IXFP26N65X2
Hersteller: IXYS
MOSFET MOSFET DISCRETE
auf Bestellung 100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+15.63 EUR
10+ 13.41 EUR
50+ 12.18 EUR
KSM6----N6--5-- Plastic_Knobs.pdf
KSM6----N6--5--
Hersteller: Essentra Components
Description: SELF-ASSEMBLY PUSH PULL KNOB 1.0
Packaging: Bulk
Color: Black
Material: Acetal
Shaft Size: M6
Diameter: 1.000" (25.40mm)
Style: Cylindrical
Type: Knurled, Straight
Height: 0.380" (9.65mm)
Indicator: No Indicator
Part Status: Active
auf Bestellung 1699 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
9+2.04 EUR
11+ 1.7 EUR
12+ 1.53 EUR
25+ 1.36 EUR
50+ 1.22 EUR
100+ 1.2 EUR
Mindestbestellmenge: 9
SIHD6N65E-GE3 sihd6n65e.pdf
SIHD6N65E-GE3
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 650V 7A DPAK
Packaging: Tube
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3A, 10V
Power Dissipation (Max): 78W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 48 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 820 pF @ 100 V
auf Bestellung 2867 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
10+1.78 EUR
75+ 1.42 EUR
150+ 1.17 EUR
525+ 1.06 EUR
Mindestbestellmenge: 10
SIHD6N65E-GE3 sihd6n65e.pdf
SIHD6N65E-GE3
Hersteller: Vishay / Siliconix
MOSFET 650V Vds 30V Vgs DPAK (TO-252)
auf Bestellung 3772 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.52 EUR
10+ 2.09 EUR
100+ 1.67 EUR
250+ 1.55 EUR
500+ 1.4 EUR
1000+ 1.22 EUR
Mindestbestellmenge: 2
SIHF6N65E-GE3 sihf6n65e.pdf
SIHF6N65E-GE3
Hersteller: Vishay / Siliconix
MOSFET 650V Vds 30V Vgs TO-220 FULLPAK
auf Bestellung 968 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+3.85 EUR
10+ 3.2 EUR
100+ 2.55 EUR
250+ 2.36 EUR
500+ 2.15 EUR
1000+ 1.81 EUR
2000+ 1.78 EUR
SIHJ6N65E-T1-GE3 sihj6n65e.pdf
SIHJ6N65E-T1-GE3
Hersteller: Vishay Semiconductors
MOSFET 650V Vds 30V Vgs PowerPAK SO-8L
auf Bestellung 5912 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+3.36 EUR
10+ 2.8 EUR
100+ 2.22 EUR
250+ 2.04 EUR
500+ 1.87 EUR
1000+ 1.59 EUR
3000+ 1.55 EUR
SIHP6N65E-GE3 sihp6n65e.pdf
SIHP6N65E-GE3
Hersteller: Vishay / Siliconix
MOSFET 650V Vds 30V Vgs TO-220AB
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+3.41 EUR
10+ 2.85 EUR
100+ 2.25 EUR
250+ 2.09 EUR
500+ 1.9 EUR
1000+ 1.57 EUR
2000+ 1.54 EUR
SIHU6N65E-GE3 sihu6n65e.pdf
SIHU6N65E-GE3
Hersteller: Vishay / Siliconix
MOSFET 650V Vds 30V Vgs IPAK (TO-251)
auf Bestellung 2701 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.69 EUR
10+ 2.24 EUR
75+ 1.76 EUR
300+ 1.64 EUR
525+ 1.49 EUR
1050+ 1.27 EUR
2550+ 1.26 EUR
Mindestbestellmenge: 2
STB6N65K3
STB6N65K3
Hersteller: STMicroelectronics
MOSFET PTD HIGH VOLTAGE
auf Bestellung 1995 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.31 EUR
10+ 1.9 EUR
100+ 1.48 EUR
500+ 1.25 EUR
1000+ 1.02 EUR
2000+ 0.96 EUR
5000+ 0.91 EUR
Mindestbestellmenge: 2
STD16N65M2 en.DM00140850.pdf
STD16N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 11A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+1.56 EUR
Mindestbestellmenge: 2500
STD16N65M2 std16n65m2-1850321.pdf
STD16N65M2
Hersteller: STMicroelectronics
MOSFET N-channel 650 V, 0.32 Ohm typ 11 A MDmesh M2 Power MOSFET in DPAK package
auf Bestellung 5531 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+3.57 EUR
10+ 2.96 EUR
100+ 2.36 EUR
500+ 1.99 EUR
1000+ 1.65 EUR
2500+ 1.57 EUR
5000+ 1.52 EUR
STD16N65M2 en.DM00140850.pdf
STD16N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 11A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.47 EUR
10+ 2.87 EUR
100+ 2.28 EUR
500+ 1.93 EUR
1000+ 1.64 EUR
Mindestbestellmenge: 6
STD16N65M5 std16n65m5.pdf
STD16N65M5
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 12A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 12A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.279Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
auf Bestellung 2487 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
21+3.55 EUR
23+ 3.12 EUR
27+ 2.67 EUR
29+ 2.53 EUR
Mindestbestellmenge: 21
STD16N65M5 std16n65m5.pdf
STD16N65M5
Hersteller: STMicroelectronics
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 710V; 12A; 90W; DPAK
Type of transistor: N-MOSFET
Technology: MDmesh™
Polarisation: unipolar
Drain-source voltage: 710V
Drain current: 12A
Power dissipation: 90W
Case: DPAK
Gate-source voltage: ±25V
On-state resistance: 0.279Ω
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 2487 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
21+3.55 EUR
23+ 3.12 EUR
27+ 2.67 EUR
29+ 2.53 EUR
Mindestbestellmenge: 21
STD16N65M5 en.CD00288956.pdf
STD16N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 12A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V
auf Bestellung 7981 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+4.73 EUR
10+ 3.98 EUR
100+ 3.22 EUR
500+ 2.86 EUR
1000+ 2.45 EUR
Mindestbestellmenge: 4
STD16N65M5 en.CD00288956.pdf
STD16N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 12A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2500+2.31 EUR
5000+ 2.21 EUR
Mindestbestellmenge: 2500
STD16N65M5 std16n65m5-1850551.pdf
STD16N65M5
Hersteller: STMicroelectronics
MOSFET N-Ch 650 Volt 12 Amp
auf Bestellung 470 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+4.77 EUR
10+ 4 EUR
25+ 3.77 EUR
100+ 3.22 EUR
250+ 3.04 EUR
500+ 2.87 EUR
1000+ 2.46 EUR
STD16N65M5 std16n65m5.pdf
STD16N65M5
Hersteller: STMicroelectronics
Trans MOSFET N-CH Si 650V 12A 3-Pin(2+Tab) DPAK T/R
auf Bestellung 2503 Stücke:
Lieferzeit 14-21 Tag (e)
STD6N65M2 en.DM00127825.pdf
STD6N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.35Ohm @ 2A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 9.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 226 pF @ 100 V
auf Bestellung 2488 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.22 EUR
10+ 1.8 EUR
100+ 1.4 EUR
500+ 1.19 EUR
1000+ 0.97 EUR
Mindestbestellmenge: 8
STD6N65M2 stb6n65m2-1850048.pdf
STD6N65M2
Hersteller: STMicroelectronics
MOSFET N-channel 650 V, 1.2 Ohm typ 4 A MDmesh M2 Power MOSFET in DPAK package
auf Bestellung 2227 Stücke:
Lieferzeit 122-126 Tag (e)
Anzahl Preis ohne MwSt
2+2.22 EUR
10+ 1.81 EUR
100+ 1.41 EUR
500+ 1.2 EUR
1000+ 0.98 EUR
2500+ 0.92 EUR
5000+ 0.87 EUR
Mindestbestellmenge: 2
STF16N65M2 en.DM00140952.pdf
STF16N65M2
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 88 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
28+2.65 EUR
44+ 1.64 EUR
46+ 1.56 EUR
Mindestbestellmenge: 28
STF16N65M2 en.DM00140952.pdf
STF16N65M2
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar
Type of transistor: N-MOSFET
Polarisation: unipolar
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 88 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
28+2.65 EUR
44+ 1.64 EUR
46+ 1.56 EUR
500+ 1.53 EUR
1000+ 1.5 EUR
Mindestbestellmenge: 28
STF16N65M2 stf16n65m2-1850541.pdf
STF16N65M2
Hersteller: STMicroelectronics
MOSFET N-channel 650 V, 0.32 Ohm typ 11 A MDmesh M2 Power MOSFET
auf Bestellung 997 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+3.27 EUR
10+ 2.24 EUR
100+ 1.99 EUR
500+ 1.76 EUR
1000+ 1.67 EUR
2000+ 1.6 EUR
5000+ 1.55 EUR
STF16N65M2 en.DM00140952.pdf
STF16N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 11A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V
auf Bestellung 998 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
6+3.5 EUR
50+ 2.83 EUR
100+ 2.32 EUR
500+ 1.97 EUR
Mindestbestellmenge: 6
STF16N65M5 STF16N65M5.pdf
STF16N65M5
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 7.3A; 90W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.3A
Power dissipation: 90W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.279Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
auf Bestellung 19 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
19+3.76 EUR
Mindestbestellmenge: 19
STF16N65M5 STF16N65M5.pdf
STF16N65M5
Hersteller: STMicroelectronics
Category: THT N channel transistors
Description: Transistor: N-MOSFET; MDmesh™ V; unipolar; 650V; 7.3A; 90W; TO220FP
Type of transistor: N-MOSFET
Technology: MDmesh™ V
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 7.3A
Power dissipation: 90W
Case: TO220FP
Gate-source voltage: ±25V
On-state resistance: 0.279Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Features of semiconductor devices: ESD protected gate
Anzahl je Verpackung: 1 Stücke
auf Bestellung 19 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
19+3.76 EUR
Mindestbestellmenge: 19
STF16N65M5 stf16n65m5-1850542.pdf
STF16N65M5
Hersteller: STMicroelectronics
MOSFET N-CH 65V 12A MDMESH
auf Bestellung 11971 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+3.47 EUR
25+ 2.92 EUR
100+ 2.6 EUR
500+ 2.5 EUR
STF16N65M5 en.CD00218186.pdf
STF16N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 12A TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 25W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220FP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V
auf Bestellung 1631 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.09 EUR
50+ 4.03 EUR
100+ 3.45 EUR
500+ 3.07 EUR
1000+ 2.63 EUR
Mindestbestellmenge: 4
STF26N65DM2 stf26n65dm2-1850822.pdf
Hersteller: STMicroelectronics
MOSFET N-channel 650 V, 0.156 Ohm typ 20 A MDmesh DM2 Power MOSFET
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+6 EUR
10+ 5.03 EUR
25+ 4.24 EUR
100+ 3.8 EUR
250+ 3.64 EUR
500+ 3.47 EUR
1000+ 3.1 EUR
STF6N65K3 stf6n65k3-1850651.pdf
STF6N65K3
Hersteller: STMicroelectronics
MOSFET N-Ch 650V 1.1 Ohm 5.4A SuperMESH3
auf Bestellung 822 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+3.84 EUR
10+ 2.04 EUR
100+ 1.8 EUR
250+ 1.67 EUR
STF6N65K3 cd0029732.pdf
STF6N65K3
Hersteller: STMicroelectronics
Trans MOSFET N-CH 650V 5.4A 3-Pin(3+Tab) TO-220FP Tube
auf Bestellung 1425 Stücke:
Lieferzeit 14-21 Tag (e)
STF6N65M2 stf6n65m2-1379793.pdf
STF6N65M2
Hersteller: STMicroelectronics
MOSFET N-channel 650 V, 1.2 Ohm typ 4 A MDmesh M2 Power MOSFET
auf Bestellung 1597 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.22 EUR
10+ 1.83 EUR
100+ 1.47 EUR
500+ 1.4 EUR
1000+ 1.14 EUR
2000+ 1.03 EUR
5000+ 1 EUR
Mindestbestellmenge: 2
STL16N65M2 stl16n65m2-1851064.pdf
STL16N65M2
Hersteller: STMicroelectronics
MOSFET N-channel 650 V, 0.325 Ohm typ 7.5 A MDmesh M2 Power MOSFET
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+3.73 EUR
10+ 3.1 EUR
100+ 2.46 EUR
250+ 2.43 EUR
500+ 2.09 EUR
1000+ 1.76 EUR
3000+ 1.67 EUR
STL16N65M2 en.DM00141948.pdf
STL16N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 7.5A POWERFLAT
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.5A (Tc)
Rds On (Max) @ Id, Vgs: 395mOhm @ 3.5A, 10V
Power Dissipation (Max): 56W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: PowerFlat™ (5x6) HV
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V
auf Bestellung 2530 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.7 EUR
10+ 3.08 EUR
100+ 2.45 EUR
500+ 2.07 EUR
1000+ 1.76 EUR
Mindestbestellmenge: 5
STP16N65M2 stp16n65m2-1851504.pdf
STP16N65M2
Hersteller: STMicroelectronics
MOSFET N-channel 650 V, 0.32 Ohm typ 11 A MDmesh M2 Power MOSFET in TO-220 package
auf Bestellung 980 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+3.52 EUR
10+ 1.9 EUR
100+ 1.81 EUR
250+ 1.78 EUR
500+ 1.7 EUR
1000+ 1.65 EUR
2000+ 1.64 EUR
STP16N65M5 en.CD00218186.pdf
Hersteller: ST
Transistor N-Channel MOSFET; 650V; 25V; 279mOhm; 12A; 25W; -55°C ~ 150°C; STP16N65M5 TSTP16N65M5
Anzahl je Verpackung: 5 Stücke
auf Bestellung 15 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
5+7.14 EUR
Mindestbestellmenge: 5
STP16N65M5 stf16n65m5-1850542.pdf
STP16N65M5
Hersteller: STMicroelectronics
MOSFET N-Ch 650 Volt 12 Amp
auf Bestellung 898 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+5.1 EUR
25+ 4.07 EUR
100+ 3.48 EUR
500+ 3.1 EUR
1000+ 2.64 EUR
2000+ 2.46 EUR
STP16N65M5 en.CD00218186.pdf
STP16N65M5
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 12A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 299mOhm @ 6A, 10V
Power Dissipation (Max): 90W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 100 V
auf Bestellung 727 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.07 EUR
50+ 4.02 EUR
100+ 3.45 EUR
500+ 3.06 EUR
Mindestbestellmenge: 4
STP16N65M5 1684623289557307cd002.pdf
STP16N65M5
Hersteller: STMicroelectronics
Trans MOSFET N-CH Si 650V 12A 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 20 Stücke:
Lieferzeit 14-21 Tag (e)
STP26N65DM2 stp26n65dm2.pdf
STP26N65DM2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 20A TO220
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 35.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1480 pF @ 100 V
auf Bestellung 858 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.4 EUR
10+ 4.54 EUR
100+ 3.67 EUR
500+ 3.27 EUR
Mindestbestellmenge: 4
STU16N65M2 stp16n65m2-1851504.pdf
STU16N65M2
Hersteller: STMicroelectronics
MOSFET N-channel 650 V, 0.32 Ohm typ 11 A MDmesh M2 Power MOSFET in IPAK package
auf Bestellung 1988 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+3.7 EUR
10+ 2.97 EUR
100+ 2.46 EUR
250+ 2.25 EUR
500+ 2.06 EUR
1000+ 1.67 EUR
3000+ 1.62 EUR
STU16N65M2 en.DM00140964.pdf
STU16N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 11A IPAK
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Tc)
Rds On (Max) @ Id, Vgs: 360mOhm @ 5.5A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251 (IPAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 19.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 718 pF @ 100 V
auf Bestellung 10491 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+3.68 EUR
75+ 2.95 EUR
150+ 2.43 EUR
525+ 2.06 EUR
1050+ 1.74 EUR
2025+ 1.66 EUR
5025+ 1.59 EUR
10050+ 1.54 EUR
Mindestbestellmenge: 5
STU6N65M2 stf6n65m2-1379793.pdf
STU6N65M2
Hersteller: STMicroelectronics
MOSFET N-channel 650 V, 1.2 Ohm typ 4 A MDmesh M2 Power MOSFET in IPAK package
auf Bestellung 2850 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+1.78 EUR
10+ 1.1 EUR
100+ 0.94 EUR
500+ 0.87 EUR
1000+ 0.75 EUR
3000+ 0.7 EUR
Mindestbestellmenge: 2
STW56N65DM2 stw56n65dm2-1852254.pdf
STW56N65DM2
Hersteller: STMicroelectronics
MOSFET N-channel 650 V, 0.058 Ohm typ 48 A MDmesh DM2 Power MOSFET
auf Bestellung 267 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+18.18 EUR
25+ 14.52 EUR
100+ 12.99 EUR
250+ 11.46 EUR
600+ 10.3 EUR
STW56N65M2 stw56n65m2-1852163.pdf
STW56N65M2
Hersteller: STMicroelectronics
MOSFET N-channel 650 V, 0.049 Ohm typ 49 A MDmesh M2 Power MOSFET
auf Bestellung 204 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+14.29 EUR
10+ 12.71 EUR
25+ 11.11 EUR
100+ 10.19 EUR
250+ 8.99 EUR
600+ 8.08 EUR
1200+ 7.73 EUR
STW56N65M2 en.DM00151747.pdf
STW56N65M2
Hersteller: STMicroelectronics
Description: MOSFET N-CH 650V 49A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 49A (Tc)
Rds On (Max) @ Id, Vgs: 62mOhm @ 24.5A, 10V
Power Dissipation (Max): 358W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 93 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 100 V
auf Bestellung 114 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+14.19 EUR
30+ 11.32 EUR
Mindestbestellmenge: 2
TRS16N65FB,S1Q datasheet_en_20200703.pdf?did=69235
TRS16N65FB,S1Q
Hersteller: Toshiba Semiconductor and Storage
Description: DIODE ARR SIC SCHOTT 650V TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 8A (DC)
Supplier Device Package: TO-247
Operating Temperature - Junction: 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.6 V @ 8 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 138 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+9.42 EUR
30+ 7.46 EUR
120+ 6.39 EUR
Mindestbestellmenge: 2
TRS16N65FB,S1Q TRS16N65FB_datasheet_en_20200703-1891865.pdf
TRS16N65FB,S1Q
Hersteller: Toshiba
Schottky Diodes & Rectifiers SCHOTTKY BARRIER DIODE TO-247 V=650 IF=16A
auf Bestellung 192 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+9.47 EUR
10+ 7.52 EUR
120+ 6.42 EUR
270+ 6.16 EUR
510+ 5.72 EUR
1020+ 4.73 EUR
WMJ26N65C2 WMx26N65C2.pdf
WMJ26N65C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 20A; 147W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 147W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
auf Bestellung 34 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis ohne MwSt
12+6.02 EUR
15+ 4.8 EUR
27+ 2.69 EUR
29+ 2.55 EUR
Mindestbestellmenge: 12
WMJ26N65C2 WMx26N65C2.pdf
WMJ26N65C2
Hersteller: WAYON
Category: THT N channel transistors
Description: Transistor: N-MOSFET; WMOS™ C2; unipolar; 650V; 20A; 147W; TO247-3
Type of transistor: N-MOSFET
Technology: WMOS™ C2
Polarisation: unipolar
Drain-source voltage: 650V
Drain current: 20A
Power dissipation: 147W
Case: TO247-3
Gate-source voltage: ±30V
On-state resistance: 0.19Ω
Mounting: THT
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 34 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl Preis ohne MwSt
12+6.02 EUR
15+ 4.8 EUR
27+ 2.69 EUR
29+ 2.55 EUR
Mindestbestellmenge: 12
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