Suchergebnisse für "25n120" : > 120
Art der Ansicht :
Mindestbestellmenge: 8
.jpg "IXGH25N120")
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| TD25N1200 |
auf Bestellung 30 Stücke: Lieferzeit 21-28 Tag (e) |
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| TD25N1200KOC | AEG | 05+ |
auf Bestellung 400 Stücke: Lieferzeit 21-28 Tag (e) |
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| TD25N1200KOF | AEG |
auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) |
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| TT25N1200KOC | AEG |
auf Bestellung 100 Stücke: Lieferzeit 21-28 Tag (e) |
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| Транзистор IGBT FGA25N120ANTD 25A 1200V TO-3P |
auf Bestellung 11 Stücke: Lieferzeit 14-21 Tag (e) |
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| Транзистор IGBT IKW25N120H3 25A 1200V TO-247 |
auf Bestellung 6 Stücke: Lieferzeit 14-21 Tag (e) |
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FQA25N120D (Transistor) Produktcode: 76065 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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IGW25N120H3 Produktcode: 160434 |
Transistoren > Transistoren IGBT, Leistungsmodule |
Produkt ist nicht verfügbar
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IKW25N120H3 Produktcode: 113551 |
Transistoren > Transistoren IGBT, Leistungsmodule |
Produkt ist nicht verfügbar
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IKW25N120T2 Produktcode: 39789 |
Transistoren > Transistoren IGBT, Leistungsmodule |
Produkt ist nicht verfügbar
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KGT25N120NDA Produktcode: 178327 |
Transistoren > Transistoren IGBT, Leistungsmodule |
Produkt ist nicht verfügbar
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SGW25N120 Produktcode: 37466 |
Infineon |
 Transistoren > Transistoren IGBT, LeistungsmoduleGehäuse: TO-247 Vces: 1200 Vce: 3,1 Ic 25: 46 Ic 100: 25 Pd 25: 313 td(on)/td(off) 100-150 Grad: 45/730 |
Produkt ist nicht verfügbar
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SKW25N120 Produktcode: 26558 |
Transistoren > Transistoren IGBT, Leistungsmodule |
Produkt ist nicht verfügbar
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| 711AB125N1206AUD40 | Glenair | Circular MIL Spec Tools, Hardware & Accessories ACCESSORIES - GTK CONDUIT FITTING |
Produkt ist nicht verfügbar |
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FGA25N120ANDTU | onsemi |
Description: IGBT 1200V 40A 310W TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 350 ns Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A Supplier Device Package: TO-3P IGBT Type: NPT Td (on/off) @ 25°C: 60ns/170ns Switching Energy: 4.8mJ (on), 1mJ (off) Test Condition: 600V, 25A, 10Ohm, 15V Gate Charge: 200 nC Part Status: Obsolete Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 75 A Power - Max: 310 W |
Produkt ist nicht verfügbar |
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FGA25N120ANTDTU | onsemi |
Description: IGBT NPT/TRENCH 1200V 50A TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 350 ns Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 50A Supplier Device Package: TO-3P IGBT Type: NPT and Trench Td (on/off) @ 25°C: 50ns/190ns Switching Energy: 4.1mJ (on), 960µJ (off) Test Condition: 600V, 25A, 10Ohm, 15V Gate Charge: 200 nC Part Status: Obsolete Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 90 A Power - Max: 312 W |
Produkt ist nicht verfügbar |
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FGA25N120ANTDTU | ON Semiconductor |
Trans IGBT Chip N-CH 1200V 50A 312000mW 3-Pin(3+Tab) TO-3PN Rail |
Produkt ist nicht verfügbar |
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FGA25N120ANTDTU-F109 | onsemi |
Description: IGBT 1200V 50A 312W TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 350 ns Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 50A Supplier Device Package: TO-3P IGBT Type: NPT and Trench Td (on/off) @ 25°C: 50ns/190ns Switching Energy: 4.1mJ (on), 960µJ (off) Test Condition: 600V, 25A, 10Ohm, 15V Gate Charge: 200 nC Part Status: Obsolete Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 90 A Power - Max: 312 W |
Produkt ist nicht verfügbar |
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FGA25N120ANTDTU-F109 | ON Semiconductor |
Trans IGBT Chip N-CH 1200V 50A 312000mW 3-Pin(3+Tab) TO-3P Tube |
Produkt ist nicht verfügbar |
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FGA25N120ANTU | onsemi |
Description: IGBT 1200V 40A 310W TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A Supplier Device Package: TO-3P IGBT Type: NPT Td (on/off) @ 25°C: 60ns/170ns Switching Energy: 4.8mJ (on), 1mJ (off) Test Condition: 600V, 25A, 10Ohm, 15V Gate Charge: 200 nC Part Status: Obsolete Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 75 A Power - Max: 310 W |
Produkt ist nicht verfügbar |
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FGA25N120FTD | onsemi |
Description: IGBT 1200V 50A 313W TO3P Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 770 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A Supplier Device Package: TO-3P IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 48ns/210ns Switching Energy: 340µJ (on), 900µJ (off) Test Condition: 600V, 25A, 15Ohm, 15V Gate Charge: 160 nC Part Status: Obsolete Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 75 A Power - Max: 313 W |
Produkt ist nicht verfügbar |
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FGA25N120FTD | ON Semiconductor |
Trans IGBT Chip N-CH 1200V 50A 313000mW 3-Pin(3+Tab) TO-3PN Rail |
Produkt ist nicht verfügbar |
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FGA25N120FTD | ON Semiconductor |
Trans IGBT Chip N-CH 1200V 50A 313000mW 3-Pin(3+Tab) TO-3PN Rail |
Produkt ist nicht verfügbar |
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FGH25N120FTDS | onsemi |
Description: IGBT 1200V 50A 313W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 535 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 26ns/151ns Switching Energy: 1.42mJ (on), 1.16mJ (off) Test Condition: 600V, 25A, 10Ohm, 15V Gate Charge: 169 nC Part Status: Obsolete Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 75 A Power - Max: 313 W |
Produkt ist nicht verfügbar |
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FGH25N120FTDS | ON Semiconductor |
Trans IGBT Chip N-CH 1200V 50A 313000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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FGH25N120FTDS | ON Semiconductor |
Trans IGBT Chip N-CH 1200V 50A 313000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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IGW25N120H3FKSA1 | Infineon Technologies |
Trans IGBT Chip N-CH 1200V 50A 326000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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IGW25N120H3XK | Infineon Technologies |
IGBT Transistors IGBT PRODUCTS |
Produkt ist nicht verfügbar |
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IHW25N120E1XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 25A; 92.4W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ RC Collector-emitter voltage: 1.2kV Collector current: 25A Power dissipation: 92.4W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 75A Mounting: THT Gate charge: 147nC Kind of package: tube Turn-off time: 2004ns Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) |
Produkt ist nicht verfügbar |
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IHW25N120E1XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 25A; 92.4W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ RC Collector-emitter voltage: 1.2kV Collector current: 25A Power dissipation: 92.4W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 75A Mounting: THT Gate charge: 147nC Kind of package: tube Turn-off time: 2004ns Features of semiconductor devices: reverse conducting IGBT (RC-IGBT) Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IHW25N120E1XKSA1 | Infineon Technologies |
Trans IGBT Chip N-CH 1200V 50A 231000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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IHW25N120R2FKSA1 | Infineon Technologies |
Description: IGBT 1200V 50A 365W TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 25A Supplier Device Package: PG-TO247-3-1 IGBT Type: NPT Td (on/off) @ 25°C: -/324ns Switching Energy: 1.59mJ Test Condition: 600V, 25A, 10Ohm, 15V Gate Charge: 60.7 nC Part Status: Obsolete Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 75 A Power - Max: 365 W |
Produkt ist nicht verfügbar |
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IHW25N120R2FKSA1 | Infineon Technologies |
Trans IGBT Chip N-CH 1200V 50A 365000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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| IKW25N120CS7XKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 600V; 37A; 125W; TO247-3 Type of transistor: IGBT Technology: TRENCHSTOP™ Collector-emitter voltage: 600V Collector current: 37A Power dissipation: 125W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 75A Mounting: THT Gate charge: 150nC Kind of package: tube Turn-on time: 38ns Turn-off time: 490ns Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |
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IKW25N120H3FKSA1 | INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3 Type of transistor: IGBT Technology: TRENCHSTOP™ 3 Collector-emitter voltage: 1.2kV Collector current: 50A Power dissipation: 326W Case: TO247-3 Gate-emitter voltage: ±20V Pulsed collector current: 100A Mounting: THT Gate charge: 115nC Kind of package: tube Manufacturer series: H3 Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
auf Bestellung 25 Stücke: Lieferzeit 7-14 Tag (e) |
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IKW25N120T2FKSA1 | Infineon Technologies |
Trans IGBT Chip N-CH 1200V 50A 349000mW Automotive 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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IRG8P25N120KD-EPBF | Infineon Technologies |
Description: IGBT 1200V 40A TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 70 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 20ns/170ns Switching Energy: 800µJ (on), 900µJ (off) Test Condition: 600V, 15A, 10Ohm, 15V Gate Charge: 135 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 45 A Power - Max: 180 W |
Produkt ist nicht verfügbar |
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IRG8P25N120KDPBF | Infineon Technologies |
Description: IGBT 1200V 40A 180W TO-247AC Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 70 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A Supplier Device Package: TO-247AC Td (on/off) @ 25°C: 20ns/170ns Switching Energy: 800µJ (on), 900µJ (off) Test Condition: 600V, 15A, 10Ohm, 15V Gate Charge: 135 nC Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 45 A Power - Max: 180 W |
Produkt ist nicht verfügbar |
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IRG8P25N120KDPBF | Infineon Technologies |
Trans IGBT Chip N-CH 1200V 40A 180000mW 3-Pin(3+Tab) TO-247AC Tube |
Produkt ist nicht verfügbar |
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IXEH25N120 | IXYS |
Description: IGBT 1200V 36A 200W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A Supplier Device Package: TO-247AD IGBT Type: NPT Switching Energy: 4.1mJ (on), 1.5mJ (off) Test Condition: 600V, 20A, 68Ohm, 15V Gate Charge: 100 nC Part Status: Obsolete Current - Collector (Ic) (Max): 36 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 200 W |
Produkt ist nicht verfügbar |
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IXEH25N120D1 | IXYS |
Description: IGBT 1200V 36A 200W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 130 ns Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A Supplier Device Package: TO-247AD IGBT Type: NPT Switching Energy: 4.1mJ (on), 1.5mJ (off) Test Condition: 600V, 20A, 68Ohm, 15V Gate Charge: 100 nC Part Status: Obsolete Current - Collector (Ic) (Max): 36 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 200 W |
Produkt ist nicht verfügbar |
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IXGH25N120 | IXYS |
Description: IGBT 1200V 50A 200W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 100ns/650ns Switching Energy: 11mJ (off) Test Condition: 960V, 25A, 33Ohm, 15V Gate Charge: 130 nC Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 100 A Power - Max: 200 W |
Produkt ist nicht verfügbar |
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IXGH25N120 | IXYS |
IGBT Transistors 50 Amps 1200V 3 Rds |
Produkt ist nicht verfügbar |
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IXGH25N120A | IXYS |
Description: IGBT 1200V 50A 200W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 100ns/650ns Switching Energy: 11mJ (off) Test Condition: 960V, 25A, 33Ohm, 15V Gate Charge: 130 nC Part Status: Active Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 100 A Power - Max: 200 W |
Produkt ist nicht verfügbar |
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IXGH25N120A | IXYS |
IGBT Transistors 25 Amps 1200V |
Produkt ist nicht verfügbar |
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IXSH25N120A | IXYS |
Description: IGBT 1200V 50A 200W TO247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 100ns/450ns Switching Energy: 9.6mJ (off) Test Condition: 960V, 25A, 18Ohm, 15V Gate Charge: 120 nC Part Status: Obsolete Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 80 A Power - Max: 200 W |
Produkt ist nicht verfügbar |
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IXSH25N120AU1 | IXYS |
Description: IGBT 1200V 50A 200W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 60 ns Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 100ns/450ns Switching Energy: 9.6mJ (off) Test Condition: 960V, 25A, 18Ohm, 15V Gate Charge: 120 nC Part Status: Obsolete Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 80 A Power - Max: 200 W |
Produkt ist nicht verfügbar |
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| MIW25N120FA | Micro Commercial Components |
MIW25N120FA |
Produkt ist nicht verfügbar |
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| MIW25N120FA-BP | Micro Commercial Components |
MIW25N120FA-BP |
Produkt ist nicht verfügbar |
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NGTB25N120FL2WAG | onsemi |
Description: IGBT FIELD STOP 1.2KV TO247-4 Packaging: Tube Package / Case: TO-247-4 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 136 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A Supplier Device Package: TO-247-4L IGBT Type: Field Stop Td (on/off) @ 25°C: 17ns/113ns Switching Energy: 990µJ (on), 660µJ (off) Test Condition: 600V, 50A, 10Ohm, 15V Gate Charge: 181 nC Part Status: Obsolete Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 100 A Power - Max: 385 W |
Produkt ist nicht verfügbar |
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NGTB25N120FL2WAG | ON Semiconductor |
Trans IGBT Chip N-CH 1200V 100A 385000mW 4-Pin(4+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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NGTB25N120FL2WG | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 25A; 192W; TO247-4 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 25A Power dissipation: 192W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 100A Mounting: THT Gate charge: 178nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode; Kelvin terminal |
Produkt ist nicht verfügbar |
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NGTB25N120FL2WG | ONSEMI |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 25A; 192W; TO247-4 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 25A Power dissipation: 192W Case: TO247-4 Gate-emitter voltage: ±20V Pulsed collector current: 100A Mounting: THT Gate charge: 178nC Kind of package: tube Features of semiconductor devices: integrated anti-parallel diode; Kelvin terminal Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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NGTB25N120FL2WG | ON Semiconductor |
Trans IGBT Chip N-CH 1200V 50A 385000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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NGTB25N120FL3WG | ON Semiconductor |
Trans IGBT Chip N-CH 1200V 100A 349000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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NGTB25N120FLWG | onsemi |
Description: IGBT 1200V 25A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 240 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 91ns/228ns Switching Energy: 1.5mJ (on), 950µJ (off) Test Condition: 600V, 25A, 10Ohm, 15V Gate Charge: 220 nC Part Status: Obsolete Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 200 A Power - Max: 192 W |
Produkt ist nicht verfügbar |
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NGTB25N120FLWG | ON Semiconductor |
Trans IGBT Chip N-CH 1200V 50A 192000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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NGTB25N120IHLWG | onsemi |
Description: IGBT 1200V 50A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A Supplier Device Package: TO-247-3 Td (on/off) @ 25°C: -/235ns Switching Energy: 800µJ (off) Test Condition: 600V, 25A, 10Ohm, 15V Gate Charge: 200 nC Part Status: Obsolete Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 200 A Power - Max: 192 W |
Produkt ist nicht verfügbar |
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NGTB25N120IHLWG | ON Semiconductor |
Trans IGBT Chip N-CH 1200V 50A 192000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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NGTB25N120LWG | onsemi |
Description: IGBT 1200V 50A 192W TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 89ns/235ns Switching Energy: 3.4mJ (on), 800µJ (off) Test Condition: 600V, 25A, 10Ohm, 15V Gate Charge: 200 nC Part Status: Obsolete Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 200 A Power - Max: 192 W |
Produkt ist nicht verfügbar |
| IGW25N120H3 Produktcode: 160434 |
Produkt ist nicht verfügbar
| KGT25N120NDA Produktcode: 178327 |
Produkt ist nicht verfügbar
| SGW25N120 Produktcode: 37466 |
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Hersteller: Infineon
Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247
Vces: 1200
Vce: 3,1
Ic 25: 46
Ic 100: 25
Pd 25: 313
td(on)/td(off) 100-150 Grad: 45/730
Transistoren > Transistoren IGBT, Leistungsmodule
Gehäuse: TO-247
Vces: 1200
Vce: 3,1
Ic 25: 46
Ic 100: 25
Pd 25: 313
td(on)/td(off) 100-150 Grad: 45/730
Produkt ist nicht verfügbar
| SKW25N120 Produktcode: 26558 |
Produkt ist nicht verfügbar
| 711AB125N1206AUD40 |
Hersteller: Glenair
Circular MIL Spec Tools, Hardware & Accessories ACCESSORIES - GTK CONDUIT FITTING
Circular MIL Spec Tools, Hardware & Accessories ACCESSORIES - GTK CONDUIT FITTING
Produkt ist nicht verfügbar
| FGA25N120ANDTU |
|
Hersteller: onsemi
Description: IGBT 1200V 40A 310W TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
Supplier Device Package: TO-3P
IGBT Type: NPT
Td (on/off) @ 25°C: 60ns/170ns
Switching Energy: 4.8mJ (on), 1mJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 200 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 310 W
Description: IGBT 1200V 40A 310W TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
Supplier Device Package: TO-3P
IGBT Type: NPT
Td (on/off) @ 25°C: 60ns/170ns
Switching Energy: 4.8mJ (on), 1mJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 200 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 310 W
Produkt ist nicht verfügbar
| FGA25N120ANTDTU |
|
Hersteller: onsemi
Description: IGBT NPT/TRENCH 1200V 50A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 50A
Supplier Device Package: TO-3P
IGBT Type: NPT and Trench
Td (on/off) @ 25°C: 50ns/190ns
Switching Energy: 4.1mJ (on), 960µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 200 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 312 W
Description: IGBT NPT/TRENCH 1200V 50A TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 50A
Supplier Device Package: TO-3P
IGBT Type: NPT and Trench
Td (on/off) @ 25°C: 50ns/190ns
Switching Energy: 4.1mJ (on), 960µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 200 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 312 W
Produkt ist nicht verfügbar
| FGA25N120ANTDTU |
|
Hersteller: ON Semiconductor
Trans IGBT Chip N-CH 1200V 50A 312000mW 3-Pin(3+Tab) TO-3PN Rail
Trans IGBT Chip N-CH 1200V 50A 312000mW 3-Pin(3+Tab) TO-3PN Rail
Produkt ist nicht verfügbar
| FGA25N120ANTDTU-F109 |
|
Hersteller: onsemi
Description: IGBT 1200V 50A 312W TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 50A
Supplier Device Package: TO-3P
IGBT Type: NPT and Trench
Td (on/off) @ 25°C: 50ns/190ns
Switching Energy: 4.1mJ (on), 960µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 200 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 312 W
Description: IGBT 1200V 50A 312W TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 350 ns
Vce(on) (Max) @ Vge, Ic: 2.65V @ 15V, 50A
Supplier Device Package: TO-3P
IGBT Type: NPT and Trench
Td (on/off) @ 25°C: 50ns/190ns
Switching Energy: 4.1mJ (on), 960µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 200 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 312 W
Produkt ist nicht verfügbar
| FGA25N120ANTDTU-F109 |
|
Hersteller: ON Semiconductor
Trans IGBT Chip N-CH 1200V 50A 312000mW 3-Pin(3+Tab) TO-3P Tube
Trans IGBT Chip N-CH 1200V 50A 312000mW 3-Pin(3+Tab) TO-3P Tube
Produkt ist nicht verfügbar
| FGA25N120ANTU |
|
Hersteller: onsemi
Description: IGBT 1200V 40A 310W TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
Supplier Device Package: TO-3P
IGBT Type: NPT
Td (on/off) @ 25°C: 60ns/170ns
Switching Energy: 4.8mJ (on), 1mJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 200 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 310 W
Description: IGBT 1200V 40A 310W TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
Supplier Device Package: TO-3P
IGBT Type: NPT
Td (on/off) @ 25°C: 60ns/170ns
Switching Energy: 4.8mJ (on), 1mJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 200 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 310 W
Produkt ist nicht verfügbar
| FGA25N120FTD |
|
Hersteller: onsemi
Description: IGBT 1200V 50A 313W TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 770 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 48ns/210ns
Switching Energy: 340µJ (on), 900µJ (off)
Test Condition: 600V, 25A, 15Ohm, 15V
Gate Charge: 160 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 313 W
Description: IGBT 1200V 50A 313W TO3P
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 770 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Supplier Device Package: TO-3P
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 48ns/210ns
Switching Energy: 340µJ (on), 900µJ (off)
Test Condition: 600V, 25A, 15Ohm, 15V
Gate Charge: 160 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 313 W
Produkt ist nicht verfügbar
| FGA25N120FTD |
|
Hersteller: ON Semiconductor
Trans IGBT Chip N-CH 1200V 50A 313000mW 3-Pin(3+Tab) TO-3PN Rail
Trans IGBT Chip N-CH 1200V 50A 313000mW 3-Pin(3+Tab) TO-3PN Rail
Produkt ist nicht verfügbar
| FGA25N120FTD |
|
Hersteller: ON Semiconductor
Trans IGBT Chip N-CH 1200V 50A 313000mW 3-Pin(3+Tab) TO-3PN Rail
Trans IGBT Chip N-CH 1200V 50A 313000mW 3-Pin(3+Tab) TO-3PN Rail
Produkt ist nicht verfügbar
| FGH25N120FTDS |
|
Hersteller: onsemi
Description: IGBT 1200V 50A 313W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 535 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/151ns
Switching Energy: 1.42mJ (on), 1.16mJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 169 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 313 W
Description: IGBT 1200V 50A 313W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 535 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 25A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/151ns
Switching Energy: 1.42mJ (on), 1.16mJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 169 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 313 W
Produkt ist nicht verfügbar
| FGH25N120FTDS |
|
Hersteller: ON Semiconductor
Trans IGBT Chip N-CH 1200V 50A 313000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 1200V 50A 313000mW 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
| FGH25N120FTDS |
|
Hersteller: ON Semiconductor
Trans IGBT Chip N-CH 1200V 50A 313000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 1200V 50A 313000mW 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
| IGW25N120H3FKSA1 |
|
Hersteller: Infineon Technologies
Trans IGBT Chip N-CH 1200V 50A 326000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 1200V 50A 326000mW 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
| IGW25N120H3XK |
|
Hersteller: Infineon Technologies
IGBT Transistors IGBT PRODUCTS
IGBT Transistors IGBT PRODUCTS
Produkt ist nicht verfügbar
| IHW25N120E1XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 25A; 92.4W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 92.4W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Turn-off time: 2004ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 25A; 92.4W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 92.4W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Turn-off time: 2004ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Produkt ist nicht verfügbar
| IHW25N120E1XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 25A; 92.4W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 92.4W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Turn-off time: 2004ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; TRENCHSTOP™ RC; 1.2kV; 25A; 92.4W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™ RC
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 92.4W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 147nC
Kind of package: tube
Turn-off time: 2004ns
Features of semiconductor devices: reverse conducting IGBT (RC-IGBT)
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| IHW25N120E1XKSA1 |
|
Hersteller: Infineon Technologies
Trans IGBT Chip N-CH 1200V 50A 231000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 1200V 50A 231000mW 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
| IHW25N120R2FKSA1 |
|
Hersteller: Infineon Technologies
Description: IGBT 1200V 50A 365W TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 25A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: -/324ns
Switching Energy: 1.59mJ
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 60.7 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 365 W
Description: IGBT 1200V 50A 365W TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 25A
Supplier Device Package: PG-TO247-3-1
IGBT Type: NPT
Td (on/off) @ 25°C: -/324ns
Switching Energy: 1.59mJ
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 60.7 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 75 A
Power - Max: 365 W
Produkt ist nicht verfügbar
| IHW25N120R2FKSA1 |
|
Hersteller: Infineon Technologies
Trans IGBT Chip N-CH 1200V 50A 365000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 1200V 50A 365000mW 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
| IKW25N120CS7XKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 37A; 125W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 37A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Turn-on time: 38ns
Turn-off time: 490ns
Features of semiconductor devices: integrated anti-parallel diode
Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 37A; 125W; TO247-3
Type of transistor: IGBT
Technology: TRENCHSTOP™
Collector-emitter voltage: 600V
Collector current: 37A
Power dissipation: 125W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 75A
Mounting: THT
Gate charge: 150nC
Kind of package: tube
Turn-on time: 38ns
Turn-off time: 490ns
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar
| IKW25N120H3FKSA1 |
|
Hersteller: INFINEON TECHNOLOGIES
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 326W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 50A; 326W; TO247-3; H3
Type of transistor: IGBT
Technology: TRENCHSTOP™ 3
Collector-emitter voltage: 1.2kV
Collector current: 50A
Power dissipation: 326W
Case: TO247-3
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 115nC
Kind of package: tube
Manufacturer series: H3
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
auf Bestellung 25 Stücke:
Lieferzeit 7-14 Tag (e)| Anzahl | Preis ohne MwSt |
|---|---|
| 8+ | 9.72 EUR |
| 10+ | 7.44 EUR |
| 11+ | 7.02 EUR |
| IKW25N120T2FKSA1 |
|
Hersteller: Infineon Technologies
Trans IGBT Chip N-CH 1200V 50A 349000mW Automotive 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 1200V 50A 349000mW Automotive 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
| IRG8P25N120KD-EPBF |
|
Hersteller: Infineon Technologies
Description: IGBT 1200V 40A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 20ns/170ns
Switching Energy: 800µJ (on), 900µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 135 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 180 W
Description: IGBT 1200V 40A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 20ns/170ns
Switching Energy: 800µJ (on), 900µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 135 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 180 W
Produkt ist nicht verfügbar
| IRG8P25N120KDPBF |
|
Hersteller: Infineon Technologies
Description: IGBT 1200V 40A 180W TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 20ns/170ns
Switching Energy: 800µJ (on), 900µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 135 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 180 W
Description: IGBT 1200V 40A 180W TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 70 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 15A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 20ns/170ns
Switching Energy: 800µJ (on), 900µJ (off)
Test Condition: 600V, 15A, 10Ohm, 15V
Gate Charge: 135 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 45 A
Power - Max: 180 W
Produkt ist nicht verfügbar
| IRG8P25N120KDPBF |
|
Hersteller: Infineon Technologies
Trans IGBT Chip N-CH 1200V 40A 180000mW 3-Pin(3+Tab) TO-247AC Tube
Trans IGBT Chip N-CH 1200V 40A 180000mW 3-Pin(3+Tab) TO-247AC Tube
Produkt ist nicht verfügbar
| IXEH25N120 |
|
Hersteller: IXYS
Description: IGBT 1200V 36A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Switching Energy: 4.1mJ (on), 1.5mJ (off)
Test Condition: 600V, 20A, 68Ohm, 15V
Gate Charge: 100 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 200 W
Description: IGBT 1200V 36A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Switching Energy: 4.1mJ (on), 1.5mJ (off)
Test Condition: 600V, 20A, 68Ohm, 15V
Gate Charge: 100 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 200 W
Produkt ist nicht verfügbar
| IXEH25N120D1 |
|
Hersteller: IXYS
Description: IGBT 1200V 36A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 130 ns
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Switching Energy: 4.1mJ (on), 1.5mJ (off)
Test Condition: 600V, 20A, 68Ohm, 15V
Gate Charge: 100 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 200 W
Description: IGBT 1200V 36A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 130 ns
Vce(on) (Max) @ Vge, Ic: 3.2V @ 15V, 25A
Supplier Device Package: TO-247AD
IGBT Type: NPT
Switching Energy: 4.1mJ (on), 1.5mJ (off)
Test Condition: 600V, 20A, 68Ohm, 15V
Gate Charge: 100 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 36 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 200 W
Produkt ist nicht verfügbar
| IXGH25N120 |
|
Hersteller: IXYS
Description: IGBT 1200V 50A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/650ns
Switching Energy: 11mJ (off)
Test Condition: 960V, 25A, 33Ohm, 15V
Gate Charge: 130 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 200 W
Description: IGBT 1200V 50A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 25A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/650ns
Switching Energy: 11mJ (off)
Test Condition: 960V, 25A, 33Ohm, 15V
Gate Charge: 130 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 200 W
Produkt ist nicht verfügbar
| IXGH25N120A |
|
Hersteller: IXYS
Description: IGBT 1200V 50A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/650ns
Switching Energy: 11mJ (off)
Test Condition: 960V, 25A, 33Ohm, 15V
Gate Charge: 130 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 200 W
Description: IGBT 1200V 50A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/650ns
Switching Energy: 11mJ (off)
Test Condition: 960V, 25A, 33Ohm, 15V
Gate Charge: 130 nC
Part Status: Active
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 200 W
Produkt ist nicht verfügbar
| IXSH25N120A |
|
Hersteller: IXYS
Description: IGBT 1200V 50A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/450ns
Switching Energy: 9.6mJ (off)
Test Condition: 960V, 25A, 18Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 200 W
Description: IGBT 1200V 50A 200W TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/450ns
Switching Energy: 9.6mJ (off)
Test Condition: 960V, 25A, 18Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 200 W
Produkt ist nicht verfügbar
| IXSH25N120AU1 |
|
Hersteller: IXYS
Description: IGBT 1200V 50A 200W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/450ns
Switching Energy: 9.6mJ (off)
Test Condition: 960V, 25A, 18Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 200 W
Description: IGBT 1200V 50A 200W TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 4V @ 15V, 25A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 100ns/450ns
Switching Energy: 9.6mJ (off)
Test Condition: 960V, 25A, 18Ohm, 15V
Gate Charge: 120 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 80 A
Power - Max: 200 W
Produkt ist nicht verfügbar
| NGTB25N120FL2WAG |
|
Hersteller: onsemi
Description: IGBT FIELD STOP 1.2KV TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 136 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Supplier Device Package: TO-247-4L
IGBT Type: Field Stop
Td (on/off) @ 25°C: 17ns/113ns
Switching Energy: 990µJ (on), 660µJ (off)
Test Condition: 600V, 50A, 10Ohm, 15V
Gate Charge: 181 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 385 W
Description: IGBT FIELD STOP 1.2KV TO247-4
Packaging: Tube
Package / Case: TO-247-4
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 136 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Supplier Device Package: TO-247-4L
IGBT Type: Field Stop
Td (on/off) @ 25°C: 17ns/113ns
Switching Energy: 990µJ (on), 660µJ (off)
Test Condition: 600V, 50A, 10Ohm, 15V
Gate Charge: 181 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 100 A
Power - Max: 385 W
Produkt ist nicht verfügbar
| NGTB25N120FL2WAG |
|
Hersteller: ON Semiconductor
Trans IGBT Chip N-CH 1200V 100A 385000mW 4-Pin(4+Tab) TO-247 Tube
Trans IGBT Chip N-CH 1200V 100A 385000mW 4-Pin(4+Tab) TO-247 Tube
Produkt ist nicht verfügbar
| NGTB25N120FL2WG |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 192W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 192W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode; Kelvin terminal
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 192W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 192W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode; Kelvin terminal
Produkt ist nicht verfügbar
| NGTB25N120FL2WG |
|
Hersteller: ONSEMI
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 192W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 192W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode; Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Category: THT IGBT transistors
Description: Transistor: IGBT; 1.2kV; 25A; 192W; TO247-4
Type of transistor: IGBT
Collector-emitter voltage: 1.2kV
Collector current: 25A
Power dissipation: 192W
Case: TO247-4
Gate-emitter voltage: ±20V
Pulsed collector current: 100A
Mounting: THT
Gate charge: 178nC
Kind of package: tube
Features of semiconductor devices: integrated anti-parallel diode; Kelvin terminal
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
| NGTB25N120FL2WG |
|
Hersteller: ON Semiconductor
Trans IGBT Chip N-CH 1200V 50A 385000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 1200V 50A 385000mW 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
| NGTB25N120FL3WG |
|
Hersteller: ON Semiconductor
Trans IGBT Chip N-CH 1200V 100A 349000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 1200V 100A 349000mW 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
| NGTB25N120FLWG |
|
Hersteller: onsemi
Description: IGBT 1200V 25A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 240 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 91ns/228ns
Switching Energy: 1.5mJ (on), 950µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 220 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 192 W
Description: IGBT 1200V 25A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 240 ns
Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 25A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 91ns/228ns
Switching Energy: 1.5mJ (on), 950µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 220 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 192 W
Produkt ist nicht verfügbar
| NGTB25N120FLWG |
|
Hersteller: ON Semiconductor
Trans IGBT Chip N-CH 1200V 50A 192000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 1200V 50A 192000mW 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
| NGTB25N120IHLWG |
|
Hersteller: onsemi
Description: IGBT 1200V 50A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: -/235ns
Switching Energy: 800µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 200 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 192 W
Description: IGBT 1200V 50A TO247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A
Supplier Device Package: TO-247-3
Td (on/off) @ 25°C: -/235ns
Switching Energy: 800µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 200 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 192 W
Produkt ist nicht verfügbar
| NGTB25N120IHLWG |
|
Hersteller: ON Semiconductor
Trans IGBT Chip N-CH 1200V 50A 192000mW 3-Pin(3+Tab) TO-247 Tube
Trans IGBT Chip N-CH 1200V 50A 192000mW 3-Pin(3+Tab) TO-247 Tube
Produkt ist nicht verfügbar
| NGTB25N120LWG |
|
Hersteller: onsemi
Description: IGBT 1200V 50A 192W TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 89ns/235ns
Switching Energy: 3.4mJ (on), 800µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 200 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 192 W
Description: IGBT 1200V 50A 192W TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 25A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 89ns/235ns
Switching Energy: 3.4mJ (on), 800µJ (off)
Test Condition: 600V, 25A, 10Ohm, 15V
Gate Charge: 200 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 50 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 200 A
Power - Max: 192 W
Produkt ist nicht verfügbar